During nanoscale manufacture on a substrate, payload active agents are loaded on a delivery platform, with a release layer between the delivery platform and the payload active agent and an encapsulate over the payload active agent. The combined delivery platform, release layer, active agent payload, and encapsulant form a nanoscale drug delivery vehicle for subsequent delivery to a patient. The nanoscale drug delivery vehicle is small enough to permeate through the cell and deliver the payload active agent within the cell via reducing the retaining functionality of the release layer and degrading of the encapsulant. The nanoscale drug delivery vehicle offers a series of improved features including greater control of size, shape, dosage, bioavailability, cell targeting, and release timing.
Systems and methods of charge-neutralizing charged particle beams are contemplated, wherein an originating beam is transited through a sequence of slow wave recombination chambers and exposed to neutralizing beams while transit therethrough in order to produce a neutral particle beam. These systems and methods may be seen to be especially suitable for use in spacecraft or other ungrounded environments where the removal of excess charge buildup represents a substantial barrier, and when utilized in a directed energy weapon, may greatly increase the rate at which successive beam pulses may be directed against a target or against multiple targets.
During nanoscale manufacture on a substrate, payload active agents are loaded on a delivery platform, with a release layer between the delivery platform and the payload active agent and an encapsulate over the payload active agent. The combined delivery platform, release layer, active agent payload, and encapsulant form a nanoscale drug delivery vehicle for subsequent delivery to a patient. The nanoscale drug delivery vehicle is small enough to permeate through the cell and deliver the payload active agent within the cell via reducing the retaining functionality of the release layer and degrading of the encapsulant. The nanoscale drug delivery vehicle offers a series of improved features including greater control of size, shape, dosage, bioavailability, cell targeting, and release timing.
A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy less than or equal to 500 keV.
H01J 29/80 - Dispositifs de commande du rayon ou du faisceau après son passage par le système de déviation principal, p. ex. aux fins de post-accélération ou de post-concentration, applicables à la commutation de la couleur
A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam configured to hit the target.
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
H01J 37/31 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour couper ou perforer
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
6.
Method and device for spatial charged particle bunching
A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric-field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy greater than 500 keV.
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
H01J 37/31 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour couper ou perforer
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
7.
Method and device for spatial charged particle bunching
A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy less than or equal to 500 keV.
H01J 29/80 - Dispositifs de commande du rayon ou du faisceau après son passage par le système de déviation principal, p. ex. aux fins de post-accélération ou de post-concentration, applicables à la commutation de la couleur
A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy greater than 500 keV.
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
9.
Apparatus and method for controlled particle beam manufacturing
A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.
Imaging devices for measuring a structure of a surface and methods of use are provided. In certain embodiments, an imaging device includes at least one nano-mechanical resonator pair. The pair includes a reference resonator having a reference resonant frequency, and a sense resonator having a first sense resonant frequency. The device is configured to expose the sense resonator to the surface such that the sense resonator has a second sense resonant frequency. The device is also configured to measure the structure of the surface based on a difference between the second sense resonant frequency and the reference resonant frequency. In certain embodiments, an imaging device for measuring the structure of a surface includes an array of sense nano-electromechanical resonators, hi certain embodiments, the array of single nano-electromechanical resonators is advantageously arranged in a staggered configuration.
G01Q 60/00 - Types particuliers de microscopie à sonde à balayage SPM [Scanning-Probe Microscopy] ou appareils à cet effetComposants essentiels de ceux-ci
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
12.
METHOD FOR MANUFACTURING MULTI-COMPONENT OXIDE HETEROSTRUCTURES
Certain embodiments disclosed herein relate to the formation of multi-component oxide heterostructures (MCOH) using surface nucleation to pattern the atomic layer deposition (ALD) of perovskite material followed by patterned etch and metallization to produce ultra-high density MCOH nano-electronic devices. Applications include ultra-high density MCOH memory and logic, as well as electronic functionality based on single electrons, for example a novel flash memory cell Floating-Gate (FG) transistor with LaAlO3 as a gate tunneling dielectric. Other types of memoiy devices (DIMMS. DRAM, and DDR) made with patterned ALD Of LaAlO3 as a gate dielectric are also possible.
H01L 49/00 - Dispositifs à l'état solide non couverts par les groupes et et non couverts par une autre sous-classe; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
A manufacturing process technology creates a pattern on a first layer using a focused ion beam process. The pattern is transferred to a second layer, which may act as a traditional etch stop layer. The pattern can be formed on the second layer without irradiation by light through a reticle and without wet chemical developing, thereby enabling conformal coverage and very fine critical feature control. Both dark field patterns and light field patterns are disclosed, which may enable reduced or minimal exposure by the focused ion beam.
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
G03C 5/00 - Procédés photographiques ou agents à cet effetRégénération de tels agents de traitement
H01L 21/302 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour changer leurs caractéristiques physiques de surface ou leur forme, p. ex. gravure, polissage, découpage
14.
Apparatus and method for conformal mask manufacturing
A manufacturing process technology creates a pattern on a first layer using a focused ion beam process. The pattern is transferred to a second layer, which may act as a traditional etch stop layer. The pattern can be formed on the second layer without irradiation by light through a reticle and without wet chemical developing, thereby enabling conformal coverage and very fine critical feature control. Both dark field patterns and light field patterns are disclosed, which may enable reduced or minimal exposure by the focused ion beam.
A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.
A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.
A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.
A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.
A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.
A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.
A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.
A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.
brevets
