The invention provides a chemical-mechanical polishing composition comprising (i) ceria abrasive particles, wherein each ceria abrasive particle comprises at least one associated silane comprising at least one moiety of Formula I: Si(R1n(4-n)(4-n), wherein R1, X, and n are as defined herein, and (ii) water. The invention also provides a method of chemicallymechanically polishing a substrate, especially a silicon oxide and/or silicon nitride substrate, by contacting the substrate with the inventive chemical-mechanical polishing composition.
The invention provides a chemical-mechanical polishing composition comprising (i) ceria abrasive particles, wherein each ceria abrasive particle comprises at least one associated silane comprising at least one moiety of Formula I: Si(R1)n(X)(4-n), wherein R1, X, and n are as defined herein, and (ii) water. The invention also provides a method of chemically-mechanically polishing a substrate, especially a silicon oxide and/or silicon nitride substrate, by contacting the substrate with the inventive chemical-mechanical polishing composition.
The invention provides a chemical-mechanical polishing composition comprising (i) ceria abrasive particles, wherein each ceria abrasive particle comprises at least one associated silane comprising at least one moiety of Formula I: Si(R1)n(X)(4-n), wherein R1, X, and n are as defined herein, and (ii) water. The invention also provides a method of chemically-mechanically polishing a substrate, especially a silicon oxide and/or silicon nitride substrate, by contacting the substrate with the inventive chemical-mechanical polishing composition.
The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive comprising silica particles and alumina particles, wherein the alumina particles are surface-coated with an anionic polymer, and (b) water. The invention also provides a method of chemically mechanically polishing a substrate, especially a substrate comprising tungsten, silicon oxide, and nitride, with the polishing composition.
A dual-cure resin formulation having an improved pot life is described. The dual cure resin may be used to fabricate a CMP pad using a 3D printing process.
B24B 37/24 - Tampons de rodage pour travailler les surfaces planes caractérisés par la composition ou les propriétés des matériaux du tampon
B24D 18/00 - Fabrication d'outils pour meuler, p. ex. roues, non prévue ailleurs
B29C 64/124 - Procédés de fabrication additive n’utilisant que des matériaux liquides ou visqueux, p. ex. dépôt d’un cordon continu de matériau visqueux utilisant des couches de liquide à solidification sélective
B29K 33/00 - Utilisation de polymères d'acides non saturés ou de leurs dérivés comme matière de moulage
B29K 105/00 - Présentation, forme ou état de la matière moulée
A dual-cure resin formulation having an improved pot life is described. The dual cure resin may be used to fabricate a CMP pad using a 3D printing process.
C08F 2/50 - Polymérisation amorcée par énergie ondulatoire ou par rayonnement corpusculaire par la lumière ultraviolette ou visible avec des agents sensibilisants
C08G 18/67 - Composés non saturés contenant un hydrogène actif
A chemical mechanical polishing composition for polishing tungsten or molybdenum comprises, consists essentially of, or consists of a water based liquid carrier, abrasive particles dispersed in the liquid carrier, an amino acid selected from the group consisting of arginine, histidine, cysteine, lysine, and mixtures thereof, an anionic polymer or an anionic surfactant, and an optional amino acid surfactant. A method for chemical mechanical polishing a substrate including a tungsten layer or a molybdenum layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten layer or the molybdenum layer from the substrate and thereby polish the substrate.
A chemical mechanical polishing pad includes a surface portion of a first material. The surface portion includes a plurality of grooves. A first portion of the grooves are exposed grooves located at a surface of the chemical mechanical polishing pad. A second portion of the grooves are buried grooves embedded below the surface of the chemical mechanical polishing pad, such that, during use of the chemical mechanical polishing pad, one or more of the buried grooves are exposed at the surface.
B24B 37/26 - Tampons de rodage pour travailler les surfaces planes caractérisés par la forme ou le profil de la surface du tampon de rodage, p. ex. rainurée
B24B 37/22 - Tampons de rodage pour travailler les surfaces planes caractérisés par une structure multicouche
B24B 37/24 - Tampons de rodage pour travailler les surfaces planes caractérisés par la composition ou les propriétés des matériaux du tampon
The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, b) a removal rate inhibitor selected from (I) a surfactant comprising a polyoxyalkylene functional group and a sulfonate functional group, (II) a surfactant comprising a polyoxyalkylene functional group and a sulfate functional group, (III) a first surfactant comprising a polyoxyalkylene functional group and a second surfactant comprising a sulfonate functional group, and (IV) a first surfactant comprising a polyoxyalkylene functional group and a second surfactant comprising a sulfate functional group, and (c) an aqueous carrier. The invention also provides a method of chemically-mechanically polishing a substrate comprising TiN and SiN with the inventive chemical-mechanical polishing composition.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
10.
TITANIUM DIOXIDE CHEMICAL-MECHANICAL POLISHING COMPOSITION FOR POLISHING NICKEL SUBSTRATES
The invention provides a chemical-mechanical polishing composition comprising: (a) a rutile titanium dioxide abrasive; (b) an organic polishing promoter comprising a carboxylic acid, a urea, an amine, a thiol, a hydroxyl, an amide, a sulfonic acid, salts thereof, or combinations thereof; and (c) water, wherein the chemical-mechanical polishing composition has a pH of about 5 to about 12. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising a nickel layer on a surface of the substrate, using a chemical-mechanical polishing composition comprising a rutile titanium dioxide abrasive.
The invention provides a chemical-mechanical polishing composition comprising: (a) silica abrasive; (b) an amine-based compound, wherein the amine-based compound comprises a carbon to nitrogen ratio of about 1:1 to about 3:1; (c) optionally a buffer; and (d) water, wherein the polishing composition has a pH of about 9 to about 12. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising polysilicon, using the inventive polishing composition.
The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive particle; (b) an ionic oxidizer; and (c) water, wherein the chemical-mechanical polishing composition has a pH of about 1 to about 7, the abrasive particle has an isoelectric point that is higher than 8, and the ionic oxidizer has a negative charge at the pH of the chemical-mechanical polishing composition. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising a silicon carbide layer on a surface of the substrate, using said composition.
The invention provides a chemical-mechanical polishing composition comprising: (a) a silica abrasive; (b) an oxidizing agent; and (c) water, wherein the chemical-mechanical polishing composition has a pH of about 2 or less. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising a boron-doped polysilicon layer on a surface of the substrate, using said composition.
The invention provides a chemical-mechanical polishing composition comprising: (a) a silica abrasive; (b) an oxidizing agent; and (c) water, wherein the chemical-mechanical polishing composition has a pH of about 2 or less. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising a boron-doped polysilicon layer on a surface of the substrate, using said composition.
A chemical mechanical polishing composition for tungsten CMP consists of, consists essentially of, or comprises a liquid carrier, cationic abrasive particles dispersed therein, an iron-containing accelerator, a tungsten etch inhibitor, a sulfur containing anionic surfactant, and has a pH of less than about 5.
A precursor for preparing a chemical mechanical polishing pad includes a prepolymer, a disulfide-containing component, and a curative. The chemical mechanical polishing pad prepared from the precursor includes a disulfide bridge in a polymer matrix. The disulfide bridge may include a disulfide bond capable of undergoing a chain exchange reaction at temperatures experienced during chemical mechanical polishing processes, resulting in rearrangement of nearby disulfide bonds during the chemical mechanical polishing processes rather than breakage of these bonds.
A chemical mechanical polishing composition for tungsten CMP consists of, consists essentially of, or comprises a liquid carrier, cationic abrasive particles dispersed therein, an iron-containing accelerator, a tungsten etch inhibitor, a sulfur containing anionic surfactant, and has a pH of less than about 5.
A precursor for preparing a chemical mechanical polishing pad includes a prepolymer, a disulfide-containing component, and a curative. The chemical mechanical polishing pad prepared from the precursor includes a disulfide bridge in a polymer matrix. The disulfide bridge may include a disulfide bond capable of undergoing a chain exchange reaction at temperatures experienced during chemical mechanical polishing processes, resulting in rearrangement of nearby disulfide bonds during the chemical mechanical polishing processes rather than breakage of these bonds.
B24B 37/24 - Tampons de rodage pour travailler les surfaces planes caractérisés par la composition ou les propriétés des matériaux du tampon
C08G 18/10 - Procédés mettant en œuvre un prépolymère impliquant la réaction d'isocyanates ou d'isothiocyanates avec des composés contenant des hydrogènes actifs, dans une première étape réactionnelle
The invention provides a composition for preparing a chemical-mechanical polishing pad via photopolymerization and heating, the composition comprising a first component comprising: one or more acrylate-blocked isocyanates, one or more acrylate monomers and at least one photoinitiator. The composition further comprising a second component comprising one or more amine curatives. The invention also provides a method of forming a chemical-mechanical polishing pad comprising preparing a composition comprising: a first component comprising one or more acrylate-blocked isocyanates, one or more acrylate monomers and at least one photoinitiator. The composition further comprising a second component comprising one or more amine curatives. The method further comprising exposing at least a layer of the composition to ultraviolet light, thereby initiating a polymerization reaction and thus forming at least a layer of solidified pad material; and heating the layer.
B24D 3/32 - Propriétés physiques des corps ou feuilles abrasives, p. ex. surfaces abrasives de nature particulièreCorps ou feuilles abrasives caractérisés par leurs constituants les constituants étant utilisés comme agglomérants et étant essentiellement organiques en résines à structure poreuse ou alvéolaire
B24D 18/00 - Fabrication d'outils pour meuler, p. ex. roues, non prévue ailleurs
C08G 18/10 - Procédés mettant en œuvre un prépolymère impliquant la réaction d'isocyanates ou d'isothiocyanates avec des composés contenant des hydrogènes actifs, dans une première étape réactionnelle
C08G 18/81 - Isocyanates ou isothiocyanates non saturés
C08G 18/04 - Polymérisats d'isocyanates ou d'isothiocyanates avec des composés vinyliques
20.
UV-CURABLE RESINS FOR CHEMICAL MECHANICAL POLISHING PADS
The invention provides a composition for preparing a chemical-mechanical polishing pad via photopolymerization, comprising one or more acrylate urethane oligomers, one or more acrylate monomers and at least one photo-polymerization initiator. The invention also provides a method of forming a chemical-mechanical polishing pad comprising; preparing composition comprising one or more acrylate urethane oligomers, one or more acrylate monomers and at least one photo-polymerization initiator. The method further comprising exposing at least a layer of the composition to ultraviolet light, thereby initiating a polymerization reaction and thus forming at least a layer of solidified pad material.
The invention provides a composition for preparing a chemical-mechanical polishing pad via photopolymerization, comprising one or more acrylate urethane oligomers, one or more acrylate monomers and at least one photo-polymerization initiator. The invention also provides a method of forming a chemical-mechanical polishing pad comprising; preparing composition comprising one or more acrylate urethane oligomers, one or more acrylate monomers and at least one photopolymerization initiator. The method further comprising exposing at least a layer of the composition to ultraviolet light, thereby initiating a polymerization reaction and thus forming at least a layer of solidified pad material.
C08F 2/50 - Polymérisation amorcée par énergie ondulatoire ou par rayonnement corpusculaire par la lumière ultraviolette ou visible avec des agents sensibilisants
C08G 18/67 - Composés non saturés contenant un hydrogène actif
The invention provides a composition for preparing a chemical-mechanical polishing pad via photopolymerization and heating, the composition comprising a first component comprising: one or more acrylate-blocked isocyanates, one or more acrylate monomers and at least one photoinitiator. The composition further comprising a second component comprising one or more amine curatives. The invention also provides a method of forming a chemical-mechanical polishing pad comprising preparing a composition comprising: a first component comprising one or more acrylate-blocked isocyanates, one or more acrylate monomers and at least one photoinitiator. The composition further comprising a second component comprising one or more amine curatives. The method further comprising exposing at least a layer of the composition to ultraviolet light, thereby initiating a polymerization reaction and thus forming at least a layer of solidified pad material; and heating the layer.
C08F 2/50 - Polymérisation amorcée par énergie ondulatoire ou par rayonnement corpusculaire par la lumière ultraviolette ou visible avec des agents sensibilisants
C08G 18/67 - Composés non saturés contenant un hydrogène actif
B24B 37/24 - Tampons de rodage pour travailler les surfaces planes caractérisés par la composition ou les propriétés des matériaux du tampon
23.
DUAL ADDITIVE POLISHING COMPOSITION FOR GLASS SUBSTRATES
A chemical mechanical polishing composition comprises, consists of, or consists essentially of a liquid carrier, abrasive particles in the liquid carrier, a pyrophosphate compound, and a sulfonate compound or a compound including a quaternary ammonium group.
The invention provides a chemical-mechanical polishing composition comprising: (a) ceria abrasive particles; (b) a cationic polymer; (c) a buffer; and (d) water, wherein the polishing composition has a pH of about 6 to about 9. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silicon oxide, silicon nitride, and polysilicon, using the inventive polishing composition.
The invention provides a chemical-mechanical polishing composition comprising: (a) ceria abrasive particles; (b) a cationic polymer; (c) a conductivity adjust selected from an ammonium salt, a potassium salt, and a combination thereof; and (d) water, wherein the polishing composition has a pH of about 3 to about 6. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silicon oxide, silicon nitride, and polysilicon, using the inventive polishing composition.
A chemical mechanical polishing pad window having a controlled texture surface comprising repeated patterned features. The window results in an improved endpoint detection and in situ rate monitoring by providing consistent values of the ISRMmax-min characteristic over the lifetime of a CMP pad. Also provided is a chemical mechanical polishing pad with the inventive window.
The invention provides a chemical-mechanical polishing composition comprising: (a) about 3.0 wt. % to about 10 wt. % silica abrasive; (b) an anionic polymer having a weight average molecular weight of about 400 kDa to about 7000 kDa; and (c) water, wherein the polishing composition has a viscosity of at least about 1 cPs, a ratio of viscosity (cPs) to wt. % of silica abrasive of about 0.2 cPs/wt. % to about 1.5 cPs/wt. %, and a pH of about 9 to about 12. The invention additional provides a chemical-mechanical polishing composition comprising: (a) about 3.0 wt. % to about 10 wt. % silica abrasive; (b) a nonionicpolymer having a weight average molecular weight of about 300 kDa to about 7000 kDa; and (c) water, wherein the polishing composition has a viscosity of at least about 2 cPs, and a pH of about 9 to about 12. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silicon oxide, silicon nitride, polysilicon, or combinations thereof, using said compositions.
A chemical mechanical polishing composition comprises, consists of, or consists essentially of a liquid carrier, anionic particles dispersed in the liquid carrier, an anionic polymer or surfactant, and a cationic polymer.
A chemical mechanical polishing pad comprising a polishing portion, the polishing portion comprising: a polymeric body; a plurality of polymer particles embedded within the body of the polymeric body, wherein at least a portion of the plurality of polymer particles is at least partially exposed at a surface of the polymeric body; and a plurality of pores at the surface of the polymeric body.
A chemical mechanical polishing composition for polishing a substrate having a cobalt layer includes a water based liquid carrier, cationic silica abrasive particles dispersed in the liquid carrier, and a triazole compound, wherein the polishing composition has a pH of greater than about 6 and the cationic silica abrasive particles have a zeta potential of at least 10 mV. The triazole compound is not benzotriazole or a benzotriazole compound. A method for chemical mechanical polishing a substrate including a cobalt layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the cobalt layer from the substrate and thereby polish the substrate.
A chemical mechanical polishing composition for polishing a substrate including a silicon carbonitride layer, the composition comprising, consisting essentially of, or consisting of a water based liquid carrier, anionic colloidal silica particles dispersed in the liquid carrier, a topography control agent, and having a pH in a range from about 2 to about 7.
A chemical mechanical polishing pad window having a controlled texture surface comprising repeated patterned features. The window results in an improved endpoint detection and in situ rate monitoring by providing consistent values of the ISRMmax-min characteristic over the lifetime of a CMP pad. Also provided is a chemical mechanical polishing pad with the inventive window.
The invention provides a method of chemically mechanically polishing a substrate, especially a substrate comprising boron-doped polysilicon, comprising contacting the substrate with a chemical-mechanical polishing composition comprising an abrasive selected from α-alumina, silica, and a combination thereof, ferric ion, an organic acid, or a combination thereof, and water. The invention also provides a chemical-mechanical polishing composition comprising α-alumina, a nitrogen-containing compound selected from a zwitterionic homopolymer at, a monomeric ammonium salt, and a combination thereof, an organic acid, and water. The invention further provides a chemical-mechanical polishing composition comprising silica, an organic acid, ferric ion, and water.
A chemical-mechanical polishing pad comprising a removable platen adhesive comprising a textured surface. A method of using the polishing pad to eliminate or reduce the occurrence of spot balding on the surface of the polishing pad.
The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive selected from a ceria abrasive, a zirconia abrasive, and a combination thereof; (b) a self-stopping agent selected from a compound of formula (I), (c) optionally a nonionic polymer; (d) a cationic monomer compound; and (e) water, wherein the polishing composition has a pH of about 5.5 to about 8. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silicon oxide and optionally polysilicon, using said composition.
A subpad for a chemical-mechanical polishing pad, the subpad having porogens with polymeric shells. Methods of fabricating the subpad and polishing pads with a polishing surface layer bonded to the subpad layer are also described.
B24B 37/24 - Tampons de rodage pour travailler les surfaces planes caractérisés par la composition ou les propriétés des matériaux du tampon
B24D 3/32 - Propriétés physiques des corps ou feuilles abrasives, p. ex. surfaces abrasives de nature particulièreCorps ou feuilles abrasives caractérisés par leurs constituants les constituants étant utilisés comme agglomérants et étant essentiellement organiques en résines à structure poreuse ou alvéolaire
B29C 44/02 - Moulage par pression interne engendrée dans la matière, p. ex. par gonflage ou par moussage pour la fabrication d'objets de longueur définie, c.-à-d. d'objets séparés
37.
UV-curable resins used for chemical mechanical polishing pads
The invention provides a UV-curable resin for forming a chemical-mechanical polishing pad comprising: (a) one or more acrylate blocked isocyanates; (b) one or more acrylate monomers; and (c) a photoinitiator. The invention also provides a method of forming a chemical-mechanical polishing pad using the UV-curable resin.
C08G 18/10 - Procédés mettant en œuvre un prépolymère impliquant la réaction d'isocyanates ou d'isothiocyanates avec des composés contenant des hydrogènes actifs, dans une première étape réactionnelle
B24B 37/24 - Tampons de rodage pour travailler les surfaces planes caractérisés par la composition ou les propriétés des matériaux du tampon
38.
Silica-based slurry for selective polishing of carbon-based films
The invention provides a chemical-mechanical polishing composition comprising: (a) a silica abrasive, (b) a surfactant, (c) an iron cation, (d) optionally a ligand, and (e) water, wherein the silica abrasive has a negative zeta potential in the chemical-mechanical polishing composition. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising a carbon-based film, using said composition.
A chemical mechanical polishing composition for polishing tungsten or molybdenum comprises, consists essentially of, or consists of a water based liquid carrier, abrasive particles dispersed in the liquid carrier, an amino acid selected from the group consisting of arginine, histidine, cysteine, lysine, and mixtures thereof, an anionic polymer or an anionic surfactant, and an optional amino acid surfactant. A method for chemical mechanical polishing a substrate including a tungsten layer or a molybdenum layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten layer or the molybdenum layer from the substrate and thereby polish the substrate.
A chemical mechanical polishing composition for polishing a silicon wafer comprises, consists essentially of, or consists of a water based liquid carrier, colloidal silica particles dispersed in the liquid carrier, about 0.01 weight percent to about 2 weight percent of a dipolar aprotic solvent at point of use, and a pH in a range from about 8 to about 12. A method for polishing a silicon wafer may include contacting the wafer with the above described polishing composition, moving the polishing composition relative to the wafer, and abrading the wafer to remove silicon from the wafer and thereby polish the wafer.
A solid polymer electrolyte precursor composition includes (i) one or more organic solvents; (ii) one or more cellulosic polymers dissolved in the organic solvent(s); (iii) one or more polymerizable components dissolved or dispersed in the organic solvent(s); (iv) one or more photo-initiators dissolved or dispersed in the organic solvent(s), where at least one of the one or more photo-initiators, following irradiation with light, promotes polymerization of at least one of the one or more polymerizable components; (v) one or more lithium ion sources dissolved or dispersed in the organic solvent(s); (vi) one or more plasticizers dissolved or dispersed in the organic solvent(s); and (vii) one or more ceramic particles dissolved or dispersed in the organic solvent(s).
C08F 2/46 - Polymérisation amorcée par énergie ondulatoire ou par rayonnement corpusculaire
C08F 2/50 - Polymérisation amorcée par énergie ondulatoire ou par rayonnement corpusculaire par la lumière ultraviolette ou visible avec des agents sensibilisants
C08G 61/04 - Composés macromoléculaires contenant uniquement des atomes de carbone dans la chaîne principale de la molécule, p. ex. polyxylylènes uniquement des atomes de carbone aliphatiques
H01M 10/0565 - Matériaux polymères, p. ex. du type gel ou du type solide
C08F 251/02 - Composés macromoléculaires obtenus par polymérisation de monomères sur des polysaccharides ou leurs dérivés sur la cellulose ou ses dérivés
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
C08L 67/04 - Polyesters dérivés des acides hydroxycarboxyliques, p. ex. lactones
C08F 20/06 - Acide acryliqueAcide méthacryliqueLeurs sels métalliques ou leurs sels d'ammonium
43.
Secondary battery cell with solid polymer electrolyte
A secondary battery cell includes a cathode of a first electrode material, an anode of a second electrode material, and a solid polymer electrolyte layer disposed between the cathode and anode. The solid polymer electrolyte includes a first surface in contact with the cathode and a second surface in contact with the anode. The solid polymer electrolyte layer includes a cellulosic polymer matrix. The cellulosic polymer matrix includes a network of the cellulosic polymer. Lithium ions are dispersed in the cellulosic polymer matrix. Ceramic particles are dispersed in the cellulosic polymer matrix. The ceramic particles include a metal oxide. One or more plasticizers are dispersed in the cellulosic polymer matrix. One or more polymer networks are in contact with the cellulosic polymer matrix. The one or more polymer networks include an acrylate-containing polymer.
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
A chemical mechanical polishing composition includes a liquid carrier and colloidal silica particles dispersed in the liquid carrier. The colloidal silica particles have a positive charge of at least 10 mV in the liquid carrier and may be characterized as having: (i) a number average aspect ratio of greater than about 1.25 and (ii) a normalized particle size span by weight of greater than about 0.42. The polishing composition may further optionally include an iron-containing accelerator and a tungsten etch inhibitor, for example, when the polishing composition is a tungsten CMP composition.
C23F 1/26 - Compositions acides pour les métaux réfractaires
C23F 11/04 - Inhibition de la corrosion de matériaux métalliques par application d'inhibiteurs sur la surface menacée par la corrosion ou par addition d'inhibiteurs à l'agent corrosif dans des liquides à réaction acide marquée
A composition comprises, consists of, or consists essentially of a polymer including a derivatized amino acid monomer unit. A chemical mechanical polishing composition includes a water based liquid carrier, abrasive particles dispersed in the liquid carrier, and a cationic polymer having a derivatized amino acid monomer unit. A method of chemical mechanical polishing includes utilizing the chemical mechanical polishing composition to remove at least a portion of a metal or dielectric layer from a substrate and thereby polish the substrate.
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
C08G 69/10 - Polyamides dérivés, soit des acides amino-carboxyliques, soit de polyamines et d'acides polycarboxyliques dérivés d'acides aminocarboxyliques d'acides alpha-aminocarboxyliques
46.
Polishing composition and method with high selectivity for silicon nitride and polysilicon over silicon oxide
The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive comprising ceria particles, (b) a cationic polymer selected from a cationic homopolymer, a cationic copolymer comprising at least one cationic monomer and at least one nonionic monomer, and a combination thereof, (c) a quaternary ammonium salt or a quaternary phosphonium salt, and (d) water, wherein the polishing composition has a pH of about 5 to about 8. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silicon oxide, silicon nitride and/or polysilicon by contacting the substrate with the inventive chemical-mechanical polishing composition.
A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material comprises, consists of, or consists essentially of a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and a cationic polymer having a charge density of greater than about 6 meq/g.
A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material includes a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and an organic diacid.
A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material comprises, consists of, or consists essentially of a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and a cationic polymer having a charge density of less than about 6 meq/g.
A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material comprises, consists of, or consists essentially of a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, a self-stopping agent, and a cationic polymer.
A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material includes a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and at least one of an anionic compound and a nonionic compound.
Machines and machine tools for treatment of materials and for manufacturing; Cutting, drilling, abrading, sharpening and surface treatment machines and apparatus; Sweeping, cleaning, washing and laundering machines; Polishing pads for polishing machines for use in the manufacture of integrated circuit wafers, semiconductor wafers, integrated circuits, hard disk drives and chipsets; Non-abrasive polishing pads for chemical-mechanical planarizing or chemical mechanical polishing (cmp) machines for use in the manufacture of integrated circuit wafers, semiconductor wafers, integrated circuits, hard disk drives and chipsets.
Machines and machine tools for treatment of materials and for manufacturing; Cutting, drilling, abrading, sharpening and surface treatment machines and apparatus; Sweeping, cleaning, washing and laundering machines; Polishing pads for polishing machines for use in the manufacture of integrated circuit wafers, semiconductor wafers, integrated circuits, hard disk drives and chipsets; Non-abrasive polishing pads for chemical-mechanical planarizing or chemical mechanical polishing (cmp) machines for use in the manufacture of integrated circuit wafers, semiconductor wafers, integrated circuits, hard disk drives and chipsets.
Polishing pads for polishing machines for use in the manufacture of integrated circuit wafers, semiconductor wafers, integrated circuits, hard disk drives and chipsets; Non-abrasive polishing pads for chemical-mechanical planarizing or chemical mechanical polishing (cmp) machines for use in the manufacture of integrated circuit wafers, semiconductor wafers, integrated circuits, hard disk drives and chipsets
Polishing pads for polishing machines for use in the manufacture of integrated circuit wafers, semiconductor wafers, integrated circuits, hard disk drives and chipsets; Non-abrasive polishing pads for chemical-mechanical planarizing or chemical mechanical polishing (cmp) machines for use in the manufacture of integrated circuit wafers, semiconductor wafers, integrated circuits, hard disk drives and chipsets
A chemical mechanical polishing composition for polishing a substrate having a polysilicon layer includes a water based liquid carrier, a silica abrasive, an amino acid or guanidine derivative containing polysilicon polishing accelerator, and an alkali metal salt. The composition includes less than about 500 ppm tetraalkylammonium salt and has a pH in a range from about 10 to about 11.
The invention relates to a chemical-mechanical polishing composition comprising (a) a first abrasive comprising cationically modified colloidal silica particles, (b) a second abrasive having a Mohs hardness of about 5.5 or more, (c) a cationic polymer, (d) an iron containing activator, (e) an oxidizing agent, and (f) water. The invention also relates to a method of chemically mechanically polishing a substrate, especially a substrate comprising tungsten and barrier layers (e.g., nitrides), with the polishing composition.
C09K 13/00 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage
C23F 1/26 - Compositions acides pour les métaux réfractaires
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
C23F 3/06 - Métaux lourds par des solutions acides
C08L 39/00 - Compositions contenant des homopolymères ou des copolymères de composés possédant un ou plusieurs radicaux aliphatiques non saturés, chacun ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par une liaison simple ou double à l'azote ou par un hétérocycle contenant de l'azoteCompositions contenant des dérivés de tels polymères
A chemical-mechanical polishing pad comprising a thermosetting polyurethane polishing layer includes an isocyanate-terminated urethane prepolymer, a polyamine curative, and a cyclohexanedimethanol curative. The polyamine curative and the cyclohexanedimethanol curative are in a molar ratio of polyamine curative to cyclohexanedimethanol curative in a range from about 20:1 to about 1:1.
Systems, methods, and devices are provided for aligning a reference axis of an accelerometer with a measurement axis of a machinery component. An adaptor including a mounting plate, a plate stud integrated within the mounting plate, and a screw can be coupled to an accelerometer to ensure proper alignment of the reference axis of the accelerometer with the measurement axis of the machinery component. Aligning the reference axis and the measurement axis using the adaptor ensures that the axial orientation of the vibration data collected by the accelerometer properly corresponds to the intended axis of measurement of the machinery component and thus allows for consistent, repeatable installations of the accelerometer onto the machinery component without introducing alignment errors which can generate erroneous vibration data with respect to one or more axes of measurement.
G01P 15/18 - Mesure de l'accélérationMesure de la décélérationMesure des chocs, c.-à-d. d'une variation brusque de l'accélération dans plusieurs dimensions
60.
Chemical mechanical planarization pads with constant groove volume
A chemical mechanical polishing pad includes a surface portion of a first material. The surface portion includes a plurality of grooves. A first portion of the grooves are exposed grooves located at a surface of the chemical mechanical polishing pad. A second portion of the grooves are buried grooves embedded below the surface of the chemical mechanical polishing pad, such that, during use of the chemical mechanical polishing pad, one or more of the buried grooves are exposed at the surface.
B24B 37/26 - Tampons de rodage pour travailler les surfaces planes caractérisés par la forme ou le profil de la surface du tampon de rodage, p. ex. rainurée
B24B 37/22 - Tampons de rodage pour travailler les surfaces planes caractérisés par une structure multicouche
B24B 37/24 - Tampons de rodage pour travailler les surfaces planes caractérisés par la composition ou les propriétés des matériaux du tampon
A chemical mechanical polishing (CMP) pad includes a polishing portion formed using a vat-based additive manufacturing process. The polishing portion includes a polymer material with a first elastic modulus. In some embodiments the polishing portion is disposed on the backing portion. The backing portion may have a second elastic modulus. The second elastic modulus may be less than the first elastic modulus.
B24B 37/26 - Tampons de rodage pour travailler les surfaces planes caractérisés par la forme ou le profil de la surface du tampon de rodage, p. ex. rainurée
B24B 37/22 - Tampons de rodage pour travailler les surfaces planes caractérisés par une structure multicouche
B24B 37/24 - Tampons de rodage pour travailler les surfaces planes caractérisés par la composition ou les propriétés des matériaux du tampon
B33Y 80/00 - Produits obtenus par fabrication additive
The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive comprising silica particles and alumina particles, wherein the alumina particles are surface-coated with an anionic polymer, and (b) water. The invention also provides a method of chemically mechanically polishing a substrate, especially a substrate comprising tungsten, silicon oxide, and nitride, with the polishing composition.
The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive comprising colloidal silica, (b) a compound of formula (I), (c) a compound of formula (II), (d) hydrogen peroxide, and (e) water, wherein the polishing composition has a pH of about 1 to about 5. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting the substrate with the inventive chemical-mechanical polishing composition.
The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and a cationic polymer. This invention additionally provides a method suitable for polishing a dielectric substrate.
A chemical mechanical polishing composition includes a water based liquid carrier, cationic abrasive particles dispersed in the liquid carrier, a first amino acid compound having an isoelectric point of less than 7 and a second amino acid compound having an isoelectric point of greater than 7. The pH of the composition is in a range from about 1 to about 5. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.
A chemical mechanical polishing composition for polishing a substrate includes a liquid carrier and cationic metal oxide abrasive particles dispersed in the liquid carrier. The cationic metal oxide abrasive particles have a surface modified with at least one compound consisting of a silyl group having at least one quaternary ammonium group. A method for chemical mechanical polishing a substrate including a metal layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the metal layer from the substrate and thereby polish the substrate.
The invention provides a chemical-mechanical polishing composition for polishing a silicon nitride containing substrate. The composition includes an aqueous carrier; cationic silica particles dispersed in the aqueous carrier, the cationic silica abrasive particles having a zeta potential of at least 10 mV in the polishing composition; a polishing additive selected from the group consisting of a polyether amine, a polysilamine, a polyvinylimidazole, and a combination thereof, wherein the polyether amine and the polysilamine have corresponding weight average molecular weights of about 1,000 g/mol or less. The composition has a pH of greater than about 6. A method for polishing a silicon nitride containing substrate is also provided.
A chemical mechanical polishing composition for polishing a substrate having copper, barrier, and dielectric layers includes a water based liquid carrier, cationic silica abrasive particles dispersed in the liquid carrier, and a triazole compound, wherein the polishing composition has a pH of greater than about 6 and the cationic silica abrasive particles have a zeta potential of at least 10 mV. The triazole compound is not benzotriazole or a benzotriazole compound. A method for chemical mechanical polishing a substrate including copper, barrier, and dielectric layers includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the copper, barrier, and dielectric layers from the substrate and thereby polish the substrate.
The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
03 - Produits cosmétiques et préparations de toilette; préparations pour blanchir, nettoyer, polir et abraser.
04 - Huiles et graisses industrielles; lubrifiants; combustibles
05 - Produits pharmaceutiques, vétérinaires et hygièniques
07 - Machines et machines-outils
17 - Produits en caoutchouc ou en matières plastiques; matières à calfeutrer et à isoler
37 - Services de construction; extraction minière; installation et réparation
Produits et services
Polishing slurry for semiconductors; polishing consumables, namely, polishing slurries, for use in the semiconductor, electronic, rigid disk and magnetic head industries; chemical mechanical polishing slurries used for the treatment of semiconductors to planarize, smooth, or otherwise modify their chemical-mechanical properties; polishing slurries used for the treatment of semiconductors to planarize, smooth or otherwise modify their mechanical, physical, chemical and electrical properties; chemical solutions for use in the manufacturing and processing of semiconductors, namely, photoresist stripper, benotriazole (bta), and l-proline solution; fumed silica dispensed in water used to polish semiconductors; aqueous metal oxide dispersions for use in semiconductor polishing; chemical additives, namely, abrasive dispersions for use in the manufacture of electronic components and substrates, optical components, metals, machinery, computer parts, and magnetic data-storage disks and heads; polishing slurry used in the manufacture of advanced integrated circuit devices within the semi-conductor industry; high purity chemical compositions for electronic component manufacture; chemical compositions for use in semiconductor manufacturing, solar cell panel manufacturing and flat panel display manufacturing; chemical compositions for removal of photoresist and post-etch residues in the manufacture of semiconductors, integrated circuits and related products; chemicals for use in industry and science; chemical products for use in industry and science, namely, for use in the semiconductor and micro-electronics industries; chemicals and chemical blends for use in the oil and gas drilling, processing and exploration industry; chemicals, namely, polymer-containing drag reducers and flow improves to increase flow of hydrocarbons through pipelines; chemicals for use in industrial wood treating applications; chemicals for use in treating utility poles and cross-arms; Chemical mechanical polishing (cmp) slurry and chemical mechanical planarization (cmp) slurry for use in the manufacturing and processing of semiconductors in the optoelectronics and photonics industries; Chemical mechanical polishing slurry for use in polishing or smoothing the surface of flat panel displays, electronic components, glass and hard disk drive components; chemical cleaner for use in electronics industry; post-copper chemical mechanical planarization (cmp) cleaning solution for use in the manufacturing and processing of semiconductors; pad cleaning solution for use in the manufacturing and processing of semiconductors; abrasive preparations, namely, chemical cleaners, namely, abrasive dispersion slurries and cleaning and polishing preparations for use in the finishing of electronic components and substrates, optical components, glass, metals, plastics, machinery, computer parts, magnetic data-storage disks and heads; Sealants (chemicals) for the sealing of surfaces; Sealants (chemicals) for the sealing of surfaces for the oil and gas storage, pipeline and gas distribution markets. Abrasive compounds for lapping and polishing semiconductors, silicon wafers, glass and metal surfaces; cleaning solution for processing of integrated circuit (ic) in the opto-electronics and photonics industries; post-ash cleaning solution for use in the manufacturing and processing of semiconductors. Valve lubricants for the oil and gas storage, pipeline and gas distribution markets; industrial lubricants, namely lubricating oils and greases. Herbicide. Non-abrasive polishing pads for chemical-mechanical planarizing or chemical mechanical polishing (cmp) machines for use in the manufacture of semiconductor wafers, integrated circuits, hard disk drives and chipsets; polishing pads for polishing machines for use in the manufacture of semiconductor wafers, integrated circuits, hard disk drives and chipsets; Polishing pads (parts of machines) for use in the manufacture of advanced integrated circuit devices within the semiconductor industry; lubrication equipment used to service industrial valves in the oil and gas, chemical, and oilfield/wellhead industries and to service industrial gas distribution systems. Valve sealant for the oil and gas storage, pipeline and gas distribution markets; industrial sealants, namely silicone sealants and waterproof sealants, pipe-joint sealant, pipe-joint sealant for the oil and gas storage, pipeline and gas distribution markets. Leasing of oil and gas drilling equipment.
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
03 - Produits cosmétiques et préparations de toilette; préparations pour blanchir, nettoyer, polir et abraser.
04 - Huiles et graisses industrielles; lubrifiants; combustibles
05 - Produits pharmaceutiques, vétérinaires et hygièniques
07 - Machines et machines-outils
17 - Produits en caoutchouc ou en matières plastiques; matières à calfeutrer et à isoler
37 - Services de construction; extraction minière; installation et réparation
Produits et services
Polishing slurry for semiconductors; polishing consumables, namely, polishing slurries, for use in the semiconductor, electronic, rigid disk and magnetic head industries; chemical mechanical polishing slurries used for the treatment of semiconductors to planarize, smooth, or otherwise modify their chemical-mechanical properties; polishing slurries used for the treatment of semiconductors to planarize, smooth or otherwise modify their mechanical, physical, chemical and electrical properties; chemical solutions for use in the manufacturing and processing of semiconductors, namely, photoresist stripper, benotriazole (bta), and l-proline solution; fumed silica dispensed in water used to polish semiconductors; aqueous metal oxide dispersions for use in semiconductor polishing; chemical additives, namely, abrasive dispersions for use in the manufacture of electronic components and substrates, optical components, metals, machinery, computer parts, and magnetic data-storage disks and heads; polishing slurry used in the manufacture of advanced integrated circuit devices within the semi-conductor industry; high purity chemical compositions for electronic component manufacture; chemical compositions for use in semiconductor manufacturing, solar cell panel manufacturing and flat panel display manufacturing; chemical compositions for removal of photoresist and post-etch residues in the manufacture of semiconductors, integrated circuits and related products; chemicals for use in industry and science; chemical products for use in industry and science, namely, for use in the semiconductor and micro-electronics industries; chemicals and chemical blends for use in the oil and gas drilling, processing and exploration industry; chemicals, namely, polymer-containing drag reducers and flow improvers to increase flow of hydrocarbons through pipelines; chemicals for use in industrial wood treating applications; chemicals for use in treating utility poles and cross-arms; Chemical mechanical polishing (cmp) slurry and chemical mechanical planarization (cmp) slurry for use in the manufacturing and processing of semiconductors in the optoelectronics and photonics industries; Chemical mechanical polishing slurry for use in polishing or smoothing the surface of flat panel displays, electronic components, glass and hard disk drive components; chemical cleaner for use in electronics industry; post-copper chemical mechanical planarization (cmp) cleaning solution for use in the manufacturing and processing of semiconductors; pad cleaning solution for use in the manufacturing and processing of semiconductors; abrasive preparations, namely, chemical cleaners, namely, abrasive dispersion slurries and cleaning and polishing preparations for use in the finishing of electronic components and substrates, optical components, glass, metals, plastics, machinery, computer parts, magnetic data-storage disks and heads; Sealants (chemicals) for the sealing of surfaces; Sealants (chemicals) for the sealing of surfaces for the oil and gas storage, pipeline and gas distribution markets. Abrasive compounds for lapping and polishing semiconductors, silicon wafers, glass and metal surfaces; cleaning solution for processing of integrated circuit (ic) in the opto-electronics and photonics industries; post-ash cleaning solution for use in the manufacturing and processing of semiconductors. Valve lubricants for the oil and gas storage, pipeline and gas distribution markets; industrial lubricants, namely lubricating oils and greases. Herbicide. Non-abrasive polishing pads for chemical-mechanical planarizing or chemical mechanical polishing (cmp) machines for use in the manufacture of semiconductor wafers, integrated circuits, hard disk drives and chipsets; polishing pads for polishing machines for use in the manufacture of semiconductor wafers, integrated circuits, hard disk drives and chipsets; Polishing pads (parts of machines) for use in the manufacture of advanced integrated circuit devices within the semiconductor industry; lubrication equipment used to service industrial valves in the oil and gas, chemical, and oilfield/wellhead industries and to service industrial gas distribution systems. Valve sealant for the oil and gas storage, pipeline and gas distribution markets; ndustrial sealants, namely silicone sealants and waterproof sealants, pipe-joint sealant, pipe-joint sealant for the oil and gas storage, pipeline and gas distribution markets. Leasing of oil and gas drilling equipment.
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
03 - Produits cosmétiques et préparations de toilette; préparations pour blanchir, nettoyer, polir et abraser.
07 - Machines et machines-outils
Produits et services
Chemical slurry for polishing semiconductors; Chemical slurries for polishing semiconductors, silicon wafers, glass, metals, plastics, machinery, electronic components and substrates, optical components, computer parts, magnetic data-storage disks and heads for use in the semiconductor, electronic, rigid disk and magnetic head industries; Chemical slurries for polishing semiconductors used for the treatment of semiconductors to planarize, smooth, or otherwise modify their chemical-mechanical properties; Chemical slurries for polishing semiconductors used for the treatment of semiconductors to planarize, smooth or otherwise modify their mechanical, physical, chemical and electrical properties; Chemical solutions for use in the manufacturing and processing of semiconductors, namely, photoresist stripper, benzotriazole (BTA) and L-proline solution; Fumed silica dispensed in water used to polish semiconductors; Aqueous metal oxide dispersions for use in semiconductor polishing; Chemical additives, namely, abrasive dispersions for use in the manufacture of electronic components and substrates, optical components, metals, machinery, computer parts, and magnetic data-storage disks and heads; Chemical slurries for use in the manufacture of advanced integrated circuit devices within the semi-conductor industry; High purity chemical compositions for electronic component manufacture; Chemical compositions for use in semiconductor manufacturing, solar cell panel manufacturing and flat panel display manufacturing; Chemical compositions for removal of photoresist and post-etch residues in the manufacture of semiconductors, integrated circuits and related products; Chemicals for use in industry and science; Chemical preparations for use in industry and science, namely, for use in the semiconductor and micro-electronics industries; Chemical mechanical polishing (cmp) slurry and chemical mechanical planarization (cmp) slurry for use in the manufacturing and processing of semiconductors in the optoelectronics and photonics industries Industrial abrasives, namely, abrasive compounds for lapping and polishing semiconductors, silicon wafers, glass and metal surfaces; Chemical cleaner directed to the electronics industry; Post-copper chemical mechanical planarization (cmp) cleaning solution for use in the manufacturing and processing of semiconductors; Chemical cleaning solution for processing of integrated circuit (ic) in the opto-electronics and photonics industries; Post-ash cleaning solution for use in the manufacturing and processing of semiconductors; Abrasive preparations, namely, chemical cleaners, namely, abrasive dispersion slurries and cleaning and polishing preparations for use in the finishing of electronic components and substrates, optical components, glass, metals, plastics, machinery, computer parts, magnetic data-storage disks and heads Non-abrasive polishing pads for chemical-mechanical planarizing or chemical mechanical polishing (cmp) machines for use in the manufacture of semiconductor wafers, integrated circuits, hard disk drives and chipsets; Polishing pads for polishing machines for use in the manufacture of semiconductor wafers, integrated circuits, hard disk drives and chipsets; Polishing pads for use in the manufacture of advanced integrated circuit devices within the semiconductor industry
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
03 - Produits cosmétiques et préparations de toilette; préparations pour blanchir, nettoyer, polir et abraser.
04 - Huiles et graisses industrielles; lubrifiants; combustibles
07 - Machines et machines-outils
Produits et services
Chemical slurry for polishing semiconductors; Chemical slurries for polishing semiconductors, silicon wafers, glass, metals, plastics, machinery, electronic components and substrates, optical components, computer parts, magnetic data-storage disks and heads for use in the semiconductor, electronic, rigid disk and magnetic head industries; Chemical slurries for polishing semiconductors used for the treatment of semiconductors to planarize, smooth, or otherwise modify their chemical-mechanical properties; Chemical slurries for polishing semiconductors used for the treatment of semiconductors to planarize, smooth or otherwise modify their mechanical, physical, chemical and electrical properties; Chemical solutions for use in the manufacturing and processing of semiconductors, namely, photoresist stripper, benzotriazole (BTA) and L-proline solution; Fumed silica dispensed in water used to polish semiconductors; Aqueous metal oxide dispersions for use in semiconductor polishing; Chemical additives, namely, abrasive dispersions for use in the manufacture of electronic components and substrates, optical components, metals, machinery, computer parts, and magnetic data-storage disks and heads; Chemical slurries for use in the manufacture of advanced integrated circuit devices within the semi-conductor industry; High purity chemical compositions for electronic component manufacture; Chemical compositions for use in semiconductor manufacturing, solar cell panel manufacturing and flat panel display manufacturing; Chemical compositions for removal of photoresist and post-etch residues in the manufacture of semiconductors, integrated circuits and related products; Chemicals for use in industry and science; Chemical preparations for use in industry and science, namely, for use in the semiconductor and micro-electronics industries; Chemicals, namely, polymer-containing drag reducers and flow improvers to increase flow of hydrocarbons through pipelines; Chemical mechanical polishing (cmp) slurry and chemical mechanical planarization (cmp) slurry for use in the manufacturing and processing of semiconductors in the optoelectronics and photonics industries Industrial abrasives, namely, abrasive compounds for lapping and polishing semiconductors, silicon wafers, glass and metal surfaces; Chemical cleaner directed to the electronics industry; Post-copper chemical mechanical planarization (cmp) cleaning solution for use in the manufacturing and processing of semiconductors; Chemical cleaning solution for processing of integrated circuit (ic) in the opto-electronics and photonics industries; Post-ash cleaning solution for use in the manufacturing and processing of semiconductors; Abrasive preparations, namely, chemical cleaners, namely, abrasive dispersion slurries and cleaning and polishing preparations for use in the finishing of electronic components and substrates, optical components, glass, metals, plastics, machinery, computer parts, magnetic data-storage disks and heads Industrial lubricants, namely, valve lubricants for the oil and gas storage, pipeline and gas distribution markets; Industrial lubricants and greases Non-abrasive polishing pads for chemical-mechanical planarizing or chemical mechanical polishing (cmp) machines for use in the manufacture of semiconductor wafers, integrated circuits, hard disk drives and chipsets; Polishing pads for polishing machines for use in the manufacture of semiconductor wafers, integrated circuits, hard disk drives and chipsets; Polishing pads for use in the manufacture of advanced integrated circuit devices within the semiconductor industry
74.
Composition and method for polishing memory hard disks exhibiting reduced edge roll off
The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive comprising colloidal silica and fused silica, (b) a compound of formula (I) or a combination of a compound of formula (II) and a hydrophobic organic compound, (c) an amino acid, (d) hydrogen peroxide, and (e) water, wherein the polishing composition has a pH of about 1 to about 5. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting the substrate with the inventive chemical-mechanical polishing composition.
C09G 1/18 - Autres compositions de produits à polir à base substances non cireuses à base d'autres substances
B24B 37/04 - Machines ou dispositifs de rodageAccessoires conçus pour travailler les surfaces planes
G11B 5/64 - Supports d'enregistrement caractérisés par l'emploi d'un matériau spécifié comportant uniquement le matériau magnétique, sans produit de liaison
G11B 5/84 - Procédés ou appareils spécialement adaptés à la fabrication de supports d'enregistrement
The invention relates to a chemical-mechanical polishing composition comprising (a) ceria abrasive particles, (b) a cationic polymer, (c) a nonionic polymer comprising polyethylene glycol octadecyl ether, polyethylene glycol lauryl ether, polyethylene glycol oleyl ether, poly(ethylene)-co-poly(ethylene glycol), octylphenoxy poly(ethyleneoxy)ethanol, or a combination thereof, (d) a saturated monoacid, and (e) an aqueous carrier. The invention also relates to a method of polishing a substrate.
The invention provides a chemical-mechanical polishing composition comprising (a) silica particles, (b) a polymer comprising sulfonic acid monomeric units, (c) optionally, a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises silicon carbide and silicon nitride.
The invention provides a chemical-mechanical polishing composition comprising a) surface-modified colloidal silica particles, comprising a negatively-charged group on the surface of the particles, wherein the surface-modified colloidal silica particles have a negative charge, a particle size of about 90 nm to about 350 nm, and a zeta potential of about −5 mV to about −35 mV at a pH of about 3, b) an iron compound, c) a stabilizing agent, d) a corrosion inhibitor, and e) an aqueous carrier. The invention also provides a method suitable for polishing a substrate.
The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and optionally, a cationic polymer, and provides a method suitable for polishing a substrate.
The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive selected from the group consisting of alumina, ceria, titania, zirconia, and combinations thereof, wherein the abrasive is surface-coated with a copolymer comprising a combination of sulfonic acid monomeric units and carboxylic acid monomeric units a combination of sulfonic acid monomeric units and phosphonic acid monomeric units, (b) an oxidizing agent, and (c) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises tungsten or cobalt and silicon oxide.
A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, abrasive particles dispersed in the liquid carrier, an iron containing accelerator, and a cationic polymer having an amino acid monomer. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above-described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.
C09G 1/06 - Autres compositions de produits à polir
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
C23F 1/30 - Compositions acides pour les autres matériaux métalliques
C23F 3/06 - Métaux lourds par des solutions acides
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
Described are systems and methods of mixing a liquid in a container, while liquid is being added or removed from the container, and with control of the speed of a mixing device that mixes the liquid to prevent an undesired mixing effect such as splashing, formation of a vortex, foaming, and vibration of a shaft of a mixing device used to mix the liquid.
Described are chemical mechanical processing (CMP) compositions and related methods, including compositions and methods for polishing nickel-containing substrate surfaces such as nickel phosphorus (NiP) surfaces for hard disk applications, wherein the compositions contain highly irregular-shaped fused silica abrasive particles.
Described are chemical mechanical processing (CMP) compositions and related methods, including compositions and methods for polishing nickel phosphorus (NiP) surfaces for hard disk applications.
Described are materials and methods for processing (polishing or planarizing) a substrate that contains pattern dielectric material using a polishing composition (aka “slurry”) and an abrasive pad, e.g., CMP processing.
The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and optionally, a cationic polymer, and provides a method suitable for polishing a substrate.
H01L 21/302 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour changer leurs caractéristiques physiques de surface ou leur forme, p. ex. gravure, polissage, découpage
C09G 1/02 - Compositions de produits à polir contenant des abrasifs ou agents de polissage
The invention provides a chemical-mechanical polishing composition comprising (a) silica particles, (b) a polymer comprising sulfonic acid monomeric units, (c) optionally, a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises silicon carbide and silicon nitride.
Described is a post-CMP cleaning solution and methods useful to remove residue from a CMP substrate or to prevent formation of residue on a surface of a CMP substrate.
The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, a polyhydroxy aromatic carboxylic acid, an ionic polymer of formula I:
4, and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive, (b) a cobalt accelerator, and (c) an oxidizing agent that oxidizes a metal, wherein the polishing composition has a pH of about 4 to about 10. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.
The invention provides a chemical-mechanical polishing composition comprising (a) wet-process ceria abrasive, (b) a surfactant comprising an amine-containing anchor group and ethylene oxide-propylene oxide stabilizing group, wherein the surfactant has a molecular weight of from about 1000 Daltons to about 5000 Daltons, (c) an aromatic carboxylic acid or heteroaromatic carboxylic acid, and (d) water, wherein the polishing composition has a pH of about 3 to about 6. The invention further provides a method of chemically mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrates contain silicon oxide.
Described are slurry compositions useful in chemical-mechanical processing of a nickel layer of a substrate, wherein the slurry compositions contain abrasive particles that include silica particles that are cationically charged at a low pH.
3 are hydrogen; dicarboxyheterocycles; heterocyclylalkyl-α-amino acids; N-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; N-aminoalkyl-α-amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.
H01L 21/302 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour changer leurs caractéristiques physiques de surface ou leur forme, p. ex. gravure, polissage, découpage
H01L 21/461 - Traitement de corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour changer les caractéristiques physiques ou la forme de leur surface, p. ex. gravure, polissage, découpage
C09G 1/02 - Compositions de produits à polir contenant des abrasifs ou agents de polissage
B24B 37/04 - Machines ou dispositifs de rodageAccessoires conçus pour travailler les surfaces planes
Disclosed is a method of chemically-mechanically polishing a substrate. The method comprises, consists of, or consists essentially of (a) contacting a substrate containing at least one Group III-V material, with a polishing pad and a chemical-mechanical polishing composition comprising water, abrasive particles having a negative surface charge, and an oxidizing agent for oxidizing the Group III-V material in an amount of from about 0.01 wt. % to about 5 wt. %, wherein the polishing composition has a pH of from about 2 to about 5; (b) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate; and (c) abrading at least a portion of the substrate to polish the substrate. In some embodiments, the Group III-V material is a semiconductor that includes at least one element from Group III of the Periodic Table and at least one element from Group V of the Periodic Table.
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
The invention provides a chemical-mechanical polishing composition comprising (a) wet-process ceria, (b) a water-soluble cationic polymer or copolymer, (c) an aromatic carboxylic acid or heteroaromatic carboxylic acid, and (d) water, wherein the polishing composition has a pH of about 3 to about 6. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide.
Polishing pads having a polishing surface with continuous protrusions are described. Methods of fabricating polishing pads having a polishing surface with continuous protrusions are also described.
B24B 37/22 - Tampons de rodage pour travailler les surfaces planes caractérisés par une structure multicouche
B24B 37/26 - Tampons de rodage pour travailler les surfaces planes caractérisés par la forme ou le profil de la surface du tampon de rodage, p. ex. rainurée
B24B 37/20 - Tampons de rodage pour travailler les surfaces planes
Described are compositions (e.g., slurries) useful in methods for chemical-mechanical processing (e.g. polishing or planarizing) a surface of a substrate that contains tungsten, the slurries containing abrasive particles, metal cation catalyst, phosphorus-containing zwitterionic compound, and optional ingredients such as oxidizer; also described are methods and substrates used or processed on combination with the compositions.
C09K 13/00 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage
C09G 1/02 - Compositions de produits à polir contenant des abrasifs ou agents de polissage
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
Described are compositions useful in methods for chemical-mechanical processing a surface of a substrate, especially a substrate that contains dielectric material, wherein the composition contains cyclodextrin and an alkylamine.
The invention provides a composition for cleaning contaminants from semiconductor wafers following chemical-mechanical polishing. The cleaning composition contains a bulky protecting ligand, an organic amine, an organic inhibitor, and water. The invention also provides methods for using the cleaning composition.
Described are chemical-mechanical polishing compositions (e.g., slurries) and methods of using the slurries for chemical-mechanical polishing (or planarizing) a surface of a substrate that contains tungsten, the compositions containing cationic surfactant and cyclodextrin.
