A measurement apparatus includes a signal sensor unit configured to measure a measurement signal in which a target signal and first noise are mixed and detect a first noise signal of which a level of a component of the target signal is lower than a predetermined value and which includes the first noise, and include one or more signal sensors; and a processing unit performing processing of reducing a component of the first noise included in measurement data by data partitioned factor analysis on the basis of the measurement data that is data of the measurement signal measured by the signal sensor unit and control data that is data of the first noise signal measured by the signal sensor unit.
G10K 11/178 - Procédés ou dispositifs de protection contre le bruit ou les autres ondes acoustiques ou pour amortir ceux-ci, en général utilisant des effets d'interférenceMasquage du son par régénération électro-acoustique en opposition de phase des ondes acoustiques originales
To provide a coil device capable of preventing a short-circuit failure during mounting. A coil device 1 includes a core having a mounting surface, a first conductor formed of a wire, and a second conductor formed of a conductor plate. The first conductor includes a first body portion extending along the mounting surface inside the core. The second conductor includes a second body portion extending along the mounting surface inside the core and facing the first body portion. In a direction in which the first body portion and the second body portion face each other, the first body portion is positioned on one side of the core, and the first body portion and the second body portion are offset to the one side of the core on which the first body portion is positioned.
A wiring body includes a base board, a ground pattern provided on the base board, and a conductor portion including a first conductor pattern and a second conductor pattern containing metal. The ground pattern is a conductor pattern extending so as to form a planar surface. The second conductor pattern is a mesh-like conductor pattern connected to the first conductor pattern. The conductor portion is able to be arranged in a bent state.
A soft magnetic powder including a soft magnetic particle containing at least one selected from the group consisting of iron and cobalt: when the soft magnetic particle satisfies the relation of σFeCo(S)−σFeCo(C)≤−0.005, when an element distribution is divided into multiple grids to calculate a sum of content ratios of iron and cobalt in each grid, and a standard deviation of the sum of the content ratios is represented by σFeCo(S) where a population is the grids, and an element distribution is divided into multiple grids to calculate a sum of content ratios of iron and cobalt in each grid, and a standard deviation of the sum of the content ratios is represented by σFeCo(C) where a population is the multiple grids.
H01F 1/20 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux métaux ou alliages sous forme de particules, p. ex. de poudre
C22C 38/02 - Alliages ferreux, p. ex. aciers alliés contenant du silicium
C22C 38/10 - Alliages ferreux, p. ex. aciers alliés contenant du cobalt
C22C 38/30 - Alliages ferreux, p. ex. aciers alliés contenant du chrome et du cobalt
H01F 27/255 - Noyaux magnétiques fabriqués à partir de particules
An optical element includes a mode converter that converts a polarization mode of visible light. The mode converter includes a conversion unit that converts a polarization mode of the visible light from a TM0 mode to a TE1 mode, and a splitting unit that splits the visible light in the TE1 mode into a first split light in the TE0 mode and a second split light in the TE0 mode, and adjusts a phase difference between the first split light and the second split light. The splitting unit includes a first branch wave guide through which the first split light propagates and a second branch wave guide through which the second split light propagates. An optical path length of the first split light in the first branch wave guide and an optical path length of the second split light in the second branch wave guide are different from each other.
An electronic component includes a first resonance circuit configured to include a first inductor and a first capacitor; and a second resonance circuit configured to include a second inductor and a second capacitor that are magnetically coupled to the first inductor, in which the first resonance circuit includes a third inductor electrically connected in series with the first inductor, and the third inductor is disposed to be magnetically coupled to the second inductor.
In a first region of a first conversion portion, a length of an upper tapered portion in a third direction continuously increases from a first length at a first end to a second length toward an intermediate position, and a length of a lower tapered portion in the third direction continuously increases from the first length at the first end to a third length, which is longer than the second length, toward the intermediate position. In a second region of the first conversion portion, a length of the upper tapered portion in the third direction continuously increases from the second length at the intermediate position to a fourth length, which is shorter than the third length, toward a second end, and a length of the lower tapered portion in the third direction continuously decreases from the third length at the intermediate position to the fourth length toward the second end.
G02F 1/035 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des céramiques ou des cristaux électro-optiques, p. ex. produisant un effet Pockels ou un effet Kerr dans une structure de guide d'ondes optique
G02F 1/01 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur
8.
Bottom-Up Main Pole Electroplating For A Magnetic Recording Write Head
The present embodiments relate to MP electroplating processes that eliminate seamlines using a bottom-up MP electroplating process. The MP electroplating process can include, after disposing the side shield, depositing a Ru layer as a side gap layer. The process can further include depositing an insulator layer. The MP bottom-up electroplating process can further include performing an ion-beam-etch (IBE) process to clean the insulator at bottom of the trench. After resist patterning, the electroplating process can include electroplating the MP on Ru seed only from the bottom of the trench. The seamline in the MP can be eliminated in the bottom-up MP electroplating process.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
The present embodiments relate to methods for manufacturing a write head that prevents seamlines being present in a main pole. An oxide layer can be disposed over a Ruthenium (Ru) layer over a side shield over a first side of a trench formed in the side shield. A photo resist patterning process can clean the oxide layer and expose a portion of the Ru layer for main pole electroplating. The main pole can be electroplated in the trench such that the main pole contacts the Ru layer at a second side of the trench. The photo resist can be stripped and a planarization process can planarize the side shield and main pole surface.
G11B 5/187 - Structure ou fabrication de la surface de la tête en contact physique avec le milieu d'enregistrement ou immédiatement adjacente à celui-ciPièces polairesEntrefers
G11B 5/127 - Structure ou fabrication des têtes, p. ex. têtes à variation d'induction
10.
MAGNETIC CORE, MAGNETIC DEVICE, AND ELECTRONIC APPARATUS
A magnetic core includes soft magnetic particles. Large particles denote soft magnetic particles having a particle size of (0.5×D50) or more in a volume-based particle size distribution of the soft magnetic particles. M is within a specific range, where M denotes a median of AL of the large particles, and AL denotes an average distance from one of the large particles to three of the large particles nearest to the one of the large particles.
A core layer of an optical element includes a second conversion portion that converts a polarization mode of light from a TE1 mode to a TE0 mode. The second conversion portion includes: a splitting portion that splits the light in the TE1 mode incident from the first conversion portion into first split light in the TE0 mode and second split light in the TE0 mode which are in opposite phases; a coupling portion that couples the first split light that has propagated through a first branch waveguide and the second split light that has propagated through a second branch waveguide to emit the light in the TE0 mode; and a phase adjustment unit that adjusts a phase difference between the first split light and the second split light. The first branch waveguide and the second branch waveguide are arranged in a second direction.
G02F 1/035 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des céramiques ou des cristaux électro-optiques, p. ex. produisant un effet Pockels ou un effet Kerr dans une structure de guide d'ondes optique
G02F 1/01 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur
12.
SOFT MAGNETIC POWDER, MAGNETIC CORE, AND MAGNETIC DEVICE
A soft magnetic powder including a soft magnetic particle containing at least one selected from the group consisting of iron and cobalt: wherein the soft magnetic particle satisfies the relation of σFeCo(S)−σFeCo(C)≤0.005, provided that an element distribution obtained by analyzing a surface part of the soft magnetic particle using a 3DAP method is divided into a plurality of grids to calculate a sum of a content ratio of iron and a content ratio of cobalt in each grid.
H01F 1/20 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux métaux ou alliages sous forme de particules, p. ex. de poudre
C22C 38/10 - Alliages ferreux, p. ex. aciers alliés contenant du cobalt
H01F 27/255 - Noyaux magnétiques fabriqués à partir de particules
To reliably electrically connect the lead layer and protective film that covers a functional film even when the film thickness of the protective film is very small. After formation of a conductive protective film on the surface of a functional film, reverse sputtering is performed with a part of the surface of the protective film covered with a mask to physically reduce a native oxide film formed on a part of the surface of the protective film that is not covered with the mask. Thereafter, a lead layer is formed on a part of the surface of the protective film that is not covered with the mask. This can remove the native oxide film formed on the protective film without requiring etching. Thus, even when the film thickness of the protective film is very thin, it is possible to electrically connect the lead layer and protective film without damaging the functional film.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
C23C 14/04 - Revêtement de parties déterminées de la surface, p. ex. au moyen de masques
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
A magnetic core includes soft magnetic particles. The soft magnetic particles include large particles having a particle size of (0.5×V50) or more and small particles having a particle size of (2×N50) or less, where V10 denotes D10 of a volume-based particle size distribution of the soft magnetic particles, V50 denotes D50 of the volume-based particle size distribution of the soft magnetic particles, and N50 denotes D50 of a number-based particle size distribution of the soft magnetic particles. L50 is within a specific range, where L50 denotes a median of L of the small particles, and L denotes a distance from one of the small particles to one of the large particles nearest to the one of the small particles.
This power storage element comprises: a laminate (40) in which a separator (10) is disposed between a positive electrode (20) and a negative electrode (30); and an exterior body (50). The exterior body (50) includes laminate films (50a, 50b). The separator (10) is disposed in a state in which at least a section of each end thereof is sandwiched by a bonding portion of the laminate films (50a, 50b). The ratio (W2/W1) of the width (W2) of the respective ends of the separator (10) sandwiched by the laminate films (50a, 50b) to the width (W1) of the respective bonding portions of the laminate films (50a, 50b) is 0.1-0.5.
H01M 4/485 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques d'oxydes ou d'hydroxydes mixtes pour insérer ou intercaler des métaux légers, p. ex. LiTi2O4 ou LiTi2OxFy
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p. ex. LiNiO2, LiCoO2 ou LiCoOxFy
H01M 4/587 - Matériau carboné, p. ex. composés au graphite d'intercalation ou CFx pour insérer ou intercaler des métaux légers
A method of fabricating a near field transducer (NFT) in a thermally assisted magnetic recording (TAMR) head is disclosed. In some embodiments, the method includes: depositing a dielectric layer and a template layer on a waveguide core; patterning the template layer to form a template; depositing an Au NFT layer; planarizing the Au NFT layer to generate a planar layer; depositing an upper NFT layer; applying a peg patterning mask; etching the upper NFT layer and the planar layer that includes the Au NFT layer; removing the template; and depositing a dielectric material and planarizing an upper surface that includes the upper NFT layer.
G11B 13/08 - Enregistrement utilisant simultanément ou sélectivement des procédés ou des moyens entrant dans des groupes principaux différentsSupports d'enregistrement correspondantsReproduction simultanée ou sélective correspondante utilisant des interactions ou des moyens de transduction en champ proche et au moins un autre procédé ou moyen pour l'enregistrement ou la reproduction
G11B 5/31 - Structure ou fabrication des têtes, p. ex. têtes à variation d'induction utilisant des films minces
G11B 5/00 - Enregistrement par magnétisation ou démagnétisation d'un support d'enregistrementReproduction par des moyens magnétiquesSupports d'enregistrement correspondants
An electronic component includes an element body, a plurality of external electrode each including a conductive resin layer, a plurality of internal electrodes each electrically connected to a corresponding external electrode of the plurality of external electrodes, and an electrical insulation film disposed on the element body. The element body includes a pair of end surfaces, and a first side surface and a second side surface adjacent to each other and to the pair of end surfaces. The element body includes a first region positioned away from the first side surface, and a second region including the first side surface and having a dielectric constant smaller than a dielectric constant of the first region. The plurality of internal electrodes are disposed in the first region. The electrical insulation film includes a film portion positioned on a region, of the second side surface, between the conductive resin layers.
An electro-optical component includes: a single crystal substrate; an optical waveguide made of a dielectric thin film formed in contact with a main surface of the single crystal substrate; and an electrode configured to apply voltage to the optical waveguide, wherein the dielectric thin film is made of a lithium niobate film that is an epitaxial film with a c-axis orientation, and a c-axis length of the lithium niobate film is 13.88 Å or more.
G02F 1/035 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des céramiques ou des cristaux électro-optiques, p. ex. produisant un effet Pockels ou un effet Kerr dans une structure de guide d'ondes optique
G02F 1/21 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur par interférence
G02F 1/225 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur par interférence dans une structure de guide d'ondes optique
19.
SUBSTRATE WITH DIELECTRIC THIN FILM, OPTICAL WAVEGUIDE COMPONENT, AND OPTICAL MODULATION COMPONENT
A substrate with a dielectric thin film includes: a single crystal substrate; and a dielectric thin film formed in contact with a main surface of the single crystal substrate, wherein the dielectric thin film has a thickness of 0.5 μm to 2 μm and is made of a lithium niobate film that is an epitaxial film with a c-axis orientation, the dielectric thin film has a twin crystal structure of LiNbO3 of a first crystal and a second crystal corresponding to a crystal in which the first crystal is rotated 180° around the c-axis, the first crystal and the second crystal in an upper region of the dielectric thin film, excluding a lower region from the single crystal substrate to half of a thickness direction in the dielectric film, have maximum domain widths of 80 nm to 300 nm.
G02F 1/035 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des céramiques ou des cristaux électro-optiques, p. ex. produisant un effet Pockels ou un effet Kerr dans une structure de guide d'ondes optique
20.
ELECTRO-OPTICAL COMPONENT AND OPTICAL MODULATION COMPONENT
An electro-optical component includes: a single crystal substrate; an optical waveguide comprising a dielectric thin film formed in contact with the main surface of the single crystal substrate; and an electrode configured to apply voltage to the optical waveguide, wherein the dielectric thin film is made of a lithium niobate film that is an epitaxial film with a c-axis orientation, and an X-ray intensity ratio (LiNb3O8(60−2)/LiNbO3(006)) of LiNb3O8 to LiNbO3 is 0.02 or more.
G02F 1/035 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des céramiques ou des cristaux électro-optiques, p. ex. produisant un effet Pockels ou un effet Kerr dans une structure de guide d'ondes optique
An optical sensor includes a wavelength filter configured to transmit light in a specific wavelength range and a magnetic element including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer. The light passing through the wavelength filter is applied to the magnetic element and the light applied to the magnetic element is detected.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
H10B 61/00 - Dispositifs de mémoire magnétique, p. ex. dispositifs RAM magnéto-résistifs [MRAM]
Electrodes (20, 30) are provided with current collectors (22, 32) and active material layers (24, 34) that are in contact with one surface of each of the current collectors (22, 32). The active material layers (24, 34) have main parts (25, 35) and sub parts (26, 36) when viewed from a lamination direction. The sub parts (26, 36) are separated from the main parts (25, 35), and are at outer peripheral ends of the active material layers (24, 34). The area of the main parts (25, 35) is wider than the area of the sub parts (26, 36).
H01M 4/131 - Électrodes à base d'oxydes ou d'hydroxydes mixtes, ou de mélanges d'oxydes ou d'hydroxydes, p. ex. LiCoOx
H01M 4/485 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques d'oxydes ou d'hydroxydes mixtes pour insérer ou intercaler des métaux légers, p. ex. LiTi2O4 ou LiTi2OxFy
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p. ex. LiNiO2, LiCoO2 ou LiCoOxFy
In the laminated coil component, in the third direction, the pair of the connecting portions are interposed between the pair of the end portions of the coil conductor and the pair of the terminal electrode. Since each of the connecting portions has the elongated portion extending from the overlapping portion overlapping the end portion of the coil conductor, the enlargement of the contact area with the terminal electrode is achieved, and the high connection reliability between the coil conductor and the terminal electrode is achieved.
H01F 27/30 - Fixation ou serrage de bobines, d'enroulements ou de parties de ceux-ci entre euxFixation ou montage des bobines ou enroulements sur le noyau, dans l'enveloppe ou sur un autre support
This domain wall motion element includes a first magnetoresistance effect element and a first transistor. A first domain wall displacement layer of the first magnetoresistance effect element is electrically connected to a first active region of the first transistor. The length of the first magnetoresistance effect element in a first direction is longer than the length thereof in a second direction. The length of a first gate in the first direction is longer than the length thereof in the second direction. The length of the first magnetoresistance effect element in the first direction is longer than the length of the first gate in the first direction. A first gate length direction connecting the first active region and a second active region intersects with the first direction.
A magnetic field detection apparatus includes a substrate including a flat surface, and multiple projections including a first projection and a second projection. Each of the multiple projections is provided on the flat surface and includes a first inclined surface and a second inclined surface, the first inclined surface being inclined with respect to the flat surface, the second inclined surface being inclined with respect to both the flat surface and the first inclined surface. A first magnetoresistive effect film is provided on the first inclined surface. A second magnetoresistive effect film is provided on the second inclined surface. A first wiring line couples the first magnetoresistive effect film provided on the first inclined surface of the first projection of the multiple projections and the first magnetoresistive effect film provided on the first inclined surface of the second projection of the multiple projections to each other.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
A magnetic sensor includes a first path and a second path, a plurality of structures, and a plurality of first electrodes and a plurality of second electrodes. The first path includes at least one first array. The second path includes at least one second array. The at least one first array and the at least one second array are disposed so that they are arranged in a first direction. The at least one first array and the at least one second array each include an odd number of structures disposed so that they are arranged in a second direction.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
Disclosed herein is a coil component that includes a plurality of conductor layers embedded in a magnetic element The plurality of conductor layers include a first body. conductor layer positioned at one end portion in a stacking direction, a second conductor layer positioned at another end portion in the stacking direction, and one or more third conductor layers positioned between the first and second conductor layers. The first conductor layer includes a first coil pattern and first and second connection patterns exposed from the mounting surface. The second and third conductor layers include second and third coil patterns, respectively, and third and fourth connection patterns, respectively, exposed from the mounting surface. The magnetic element body is disposed in an end area that overlaps the first connection pattern in a plan view as viewed in the stacking direction.
A core device includes: a core having a mounting surface; a first conductor including a first body portion extending along the mounting surface inside the core; and a second conductor including a second body portion that extends along the mounting surface inside the core and faces the first body portion. The first body portion has a first side surface having a first thickness in a direction perpendicular to the mounting surface and a first main surface having a first width in a direction parallel to the mounting surface. The second body portion has a second side surface having a second thickness in the direction perpendicular to the mounting surface and a second main surface having a second width in the direction parallel to the mounting surface. The second width is narrower than the first width when the first body portion and the second body portion face each other.
H01F 27/30 - Fixation ou serrage de bobines, d'enroulements ou de parties de ceux-ci entre euxFixation ou montage des bobines ou enroulements sur le noyau, dans l'enveloppe ou sur un autre support
A magnetic body including, in the given order: a substrate; a magnet film including a hard-magnetic body that contains a rare earth element R such as Sm, Nd, or Pr and a transition metal T such as Co or Fe; and a soft-magnetic film including a soft-magnetic body that contains the rare earth element R and the transition metal T.
[Problem] To provide: a magnetic material film which has a thickness of several tens to several hundreds of microns and achieves high coercive force; a member with a magnetic material film, which has the magnetic material film; an actuator; and a sensor. [Solution] The present invention provides a magnetic material film which contains a rare earth element that essentially includes Sm or Nd, and a transition metal element that includes Co or Fe. The magnetic material film has a main magnetic material layer that has a plurality of crystal grains. The crystal grains include columnar grains, in each of which a first length (Lc) along the thickness direction of the main magnetic material layer is longer than a second length (La) along a direction that is perpendicular to the thickness direction, and a first average value (Lc1) of the lengths along the thickness direction of the crystal grains is 10 μm or more.
H01F 1/00 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques
H01F 1/055 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5
H01F 1/059 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments Va, p. ex. Sm2Fe17N2
H02K 1/278 - Aimants montés en surfaceAimants sertis
H02K 15/03 - Procédés ou appareils spécialement adaptés à la fabrication, l'assemblage, l'entretien ou la réparation des machines dynamo-électriques des corps statoriques ou rotoriques comportant des aimants permanents
H10D 48/40 - Dispositifs commandés par des champs magnétiques
31.
MAGNETIC MATERIAL FILM, MAGNETIC-MATERIAL-FILM-EQUIPPED MEMBER, ACTUATOR, AND SENSOR
[Problem] To provide: a highly magnetized magnetic material film having a thickness of several tens to several hundreds of microns; a magnetic-material-film-equipped member having the magnetic material film; an actuator; and a sensor. [Solution] A magnetic material film 10 includes a main magnetic material layer 20 having at least one or more crystal particles, and the concentration (T/(R+T)) of a transition metal element (T) with respect to the total (R+T) of a rare earth element (R) and the transition metal element (T) in at least one or more crystal particles 22 changes along the thickness direction of the main magnetic material layer 20.
H01F 1/00 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques
H01F 1/055 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5
H01F 1/059 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments Va, p. ex. Sm2Fe17N2
H01F 7/06 - Électro-aimantsActionneurs comportant des électro-aimants
H02K 1/278 - Aimants montés en surfaceAimants sertis
H02K 15/03 - Procédés ou appareils spécialement adaptés à la fabrication, l'assemblage, l'entretien ou la réparation des machines dynamo-électriques des corps statoriques ou rotoriques comportant des aimants permanents
32.
POSITION DETECTING SYSTEM, DETECTION TARGET MEMBER, AND MAGNETIC DETECTING DEVICE
[Problem] To provide a position sensor having high detection accuracy while being downsized. [Solution] A position detecting system includes: a detecting device 110 having a magnetic sensor 112 that detects changes in a magnetic field; and a target member 120 that faces the magnetic sensor 112 at a prescribed interval and that can be disposed so as to be capable of moving relative to the magnetic sensor 112. The target member 120 or the detecting device 110 is provided with a 300 μm or less magnet film 10 that is provided on the top surface of a base material layer 1.
A filter device includes a stack including a plurality of dielectric layers stacked together, and a resonator configured using a conductor integrated into the stack. Each of the plurality of dielectric layers is formed of a dielectric material, and has a resonance frequency that changes depending on a temperature. In the dielectric material, the resonance frequency changes linearly with respect to a change in the temperature when the temperature is within a first temperature range, and the resonance frequency changes nonlinearly with respect to the change in the temperature when the temperature is within a second temperature range.
A position detection device includes a magnet that generates a magnetic field to be detected, and a magnetic sensor. The magnetic sensor detects the magnetic field to be detected and generates a detection value corresponding to the position of the magnet. The magnetic field to be detected has a first direction that changes within a first plane, at a reference position in the first plane. The magnetic sensor includes four MR elements. Each of the MR elements includes a first magnetic layer having first magnetization that can change in direction within a second plane corresponding to the each of the MR elements. The first plane and the second plane intersect at a dihedral angle α other than 90°. A detection value depends on the direction of the first magnetization.
G01D 5/16 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier la résistance
The present application addresses a chip component for use in a MEMS setup as well as a MEMS microphone having such a chip component. The chip component has an electronically functional component that is at least partially covered in a cover. The cover has a coefficient of thermal expansion of below 200 ppm/K.
The present application addresses a MEMS microphone comprising chip component and said chip component. The chip component (3a) is at least partially covered by a thermally insulating cover (3c). A thermal expansion reducing layer (3b) is provided between the chip component (3a) and the cover (3c). The thermal expansion reducing layer (3b) has a smaller coefficient of thermal expansion than the cover (3c).
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
Artificial intelligence as a service (AIAAS) services featuring software using artificial intelligence (AI) for providing insights and perspectives on datasets and for identifying patterns and anomalies in datasets; Technology consultation in the field of data analytics; Artificial intelligence as a service (AIAAS) services featuring software using artificial intelligence (AI) for data analytics; Providing on-line non-downloadable software using artificial intelligence (AI) for providing insights and perspectives on datasets and for identifying patterns and anomalies in datasets; Providing on-line non-downloadable software using artificial intelligence (AI) for data analytics; Application service provider (ASP) featuring software using artificial intelligence (AI) for providing insights and perspectives on datasets and for identifying patterns and anomalies in datasets; Application service provider (ASP) featuring software using artificial intelligence (AI) for data analytics; Software as a service (SAAS) services featuring software using artificial intelligence (AI) for providing insights and perspectives on datasets and for identifying patterns and anomalies in datasets; Software as a service (SAAS) services featuring software using artificial intelligence (AI) for data analytics; Providing temporary use of on-line non-downloadable cloud computing software using artificial intelligence (AI) for providing insights and perspectives on datasets and for identifying patterns and anomalies in datasets; Application service provider (ASP) featuring software for use application programming interface (API); Providing temporary use of on-line non-downloadable cloud computing software using artificial intelligence (AI) for data analysis; Providing temporary use of on-line non-downloadable software for machine learning, predictive analytics, preventative analytics, failure and misuse analytics, process and energy analytics, and building models thereof; Providing temporary use of on-line non-downloadable software for developing, running and analyzing algorithms that are able to learn to analyze, classify, and take actions in response to exposure to datasets; Providing temporary use of on-line non-downloadable software for developing and implementing artificial neural (AI) networks; Research and development of technology in the field of artificial intelligence; Research, development, design and upgrading of computer software; Providing temporary use of on-line non-downloadable software for machine-learning based datasets and on-line non-downloadable software for identifying patterns and anomalies in datasets
A coil device includes a winding section comprised of a wound wire, a core, and a terminal fitting attached to the flange portion. The core includes a winding core portion provided with the winding section and a flange portion formed at an end of the winding core portion in its axial direction. The terminal fitting includes a main body portion disposed on an outer end surface of the flange portion, a mounting portion continuing to the main body portion and bending from the outer end surface toward a mounting surface of the flange portion, and a wire connection portion continuing to the main body portion and bending from the outer end surface toward a side surface of the flange portion. The mounting portion includes a plurality of mounting pieces arranged with at least one gap. The main body portion is adhered on the outer end surface by adhesive.
H01F 27/30 - Fixation ou serrage de bobines, d'enroulements ou de parties de ceux-ci entre euxFixation ou montage des bobines ou enroulements sur le noyau, dans l'enveloppe ou sur un autre support
09 - Appareils et instruments scientifiques et électriques
10 - Appareils et instruments médicaux
11 - Appareils de contrôle de l'environnement
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
Flip chip mounting machine for the manufacture of electric, electronic and semiconductor devices and components Capacitors; Multilayer Ceramic Chip Capacitors; Multilayer Capacitors; Ceramic Capacitors; Harmonic Filtering Components; Disc Type Capacitors with Lead; High Voltage Ceramic Capacitors; Multilayer Ceramic Chip Capacitors with Dipped Radial Lead; Ultra High Voltage Ceramic Capacitors; PLZT (lead lanthanum zirconate titanate) ceramic capacitors; 3-Terminal Feedthrough Capacitors; SMD (Surface Mounted Device) Inductors; SMT (Surface Mount Technology) Inductors; SMD (Surface Mounted Device) Coils; SMT (Surface Mount Technology) Coils; Surface Mount Inductors; Surface Mount Coils; Leaded Inductors; Leaded Coils; Transponder Coils; High Current Flat Wire Inductors; Coupled Inductors; PFC (Power Factor Correction) Choke Coils; Choke Coils; Power Inductors; EMC (Electromagnetic Compatibility) Components, namely, Chip Beads, Noise Suppression Filters, Noise Filters, ESD (Electrostatic Discharge) Notch Filters, 3-terminal Filters, Signal Line Common Mode Chokes, Signal Line Common Mode Filters, Common Mode Chokes; Common Mode Chokes Coils, Common Mode Filters, Power Line Common Mode Chokes, Power Line Common Mode Filters, Differential Mode Chokes, Clamp Filters, Ferrite Cores with Case, Feedthrough Capacitors, Feedthrough Filters, Power Line EMC Filters, EMC Filters, Active Leakage Current Filters that measure earth leakage currents, Current Filters, EMC (Electro Magnetic Compatibility) Reactors, Output Filters, LCL (Inductor-capacitor-inductor) Filters, Ferrites For EMC Suppression, Noise Suppression Sheets made of magnetic materials and resin, Power Line Chokes, High-Current Ring Core Chokes, D-Core Chokes, EMI (Electromagnetic Interference) Chokes, Power EMC Filters, Automotive Filter, EMC (Electromagnetic Compatibility) Feedthrough Filters; RF (Radio Frequency) Components, namely, Filters for radio frequency suppression, Diplexers, Triplexers, Baluns, Directional Couplers, Signal dividers, Signal splitters, Chip Antennas; Signal isolators, Isolators whose function is to isolate and remove adverse current to protect circuits and stabilize their operation, Circulators, Antennas; Voltage Protection Devices, namely, Multilayer Chip Protectors; Temperature Protection sensors; Temperature Protection thermistors; Diodes; Ceramic Transient Voltage Suppressors; Varistors; Surge Arresters; Current Protection Thermistors; PTC (Positive Temperature Coefficient) Inrush Current Limiters; NTC (Negative Temperature Coefficient) Inrush Current Limiters; Temperature Sensors; NTC (Negative Temperature Coefficient) Thermistors; PTC (Positive Temperature Coefficient) Thermistors; Liquid Level Sensors; Powder Level Sensors in toner for printers; Pressure Measurement Sensors; Humidity Sensors; Surface potential sensors for sensing the surface potential of charged drums; Printer toner Quantity Sensors; Stroke sensors for non-contact location tracking applications; Gear Tooth Sensors to measure gear rotations in motor vehicles and two-wheeled vehicles; Electric Current Sensors; Angle Measurement Sensors; Hall Effect Switches; Linear Hall Effect Sensors; Hall Effect Sensors; Motion Sensors; Inertial Sensors; Vibration sensors; Inclinometers; TMR (Tunnel Magneto Resistance) Sensors; NTC (Negative Temperature Coefficient) Temperature Measurement Sensors; NTC (Negative Temperature Coefficient) Elements; NTC (Negative Temperature Coefficient) Sensor Assembly; NTC (Negative Temperature Coefficient) Sensors; Electric Motor Protection Sensors; Pressure Sensor; Pressure Sensor Transmitters; Ultrasonic Sensors; Clamp AC Current Sensors; Powder Level Sensors for sensing residual printer toner and residual powders thereon; Piezoelectric Printer Toner Sensors; Magnetic Printer Toner Density Sensors; Magnetic Printer Toner Quantity Sensors; Magnetic Printer Toner Sensors; Printer Toner Density Sensors; Printer Toner Sensors; MEMS (Microelectrical Mechanical Systems) Gyroscope Sensors; MEMS (Microelectrical Mechanical Systems) Accelerometers; Buzzers; Microphones; Piezo speakers; Piezoelectric Actuators; Actuators; Piezo Actuators; MEMS Microphones; Microphone; PTC Thermistors as Heating Elements; Multilayer Piezo Actuator Stacks; Apparatus for generating atmospheric pressure plasma; Control and regulating apparatus, electric, for use in relation to the following goods: Apparatus for generating atmospheric pressure plasma; Ozonisers [ozonators]; Chemical and Physical equipment, for use in the following fields: Production of atmospheric pressure plasma, All goods included in class Ozone generators for use in administering ozone therapy; Ozonizers [ozonators] for medical use; Electric apparatus for generating atmospheric-pressure plasma and low-pressure plasma; Electric control and regulating apparatus, and chemical and physical apparatus for generating low-pressure plasma using at least one piezoelectric element and for generating atmospheric-pressure plasma, included in class 9; High-Voltage Contactors; Switching Spark Gaps; Piezoelectric Buzzers; Electromagnetic Buzzers; Ultrasonic Nebulizer Units for scientific use; Transformers; Current Sense Transformers; Step-up Transformers; Pulse Transformers; Ferrite Cores; Noise Suppressing Sheets; Magnetic Sheets; Noise Suppression Shield in the form of magnetic sheets; NFC (Near Field Communication) Antennas Shield; Anechoic Chambers; Radio Wave Absorbers; Power Supplies; Switching power supplies; AC (alternating current) to DC (direct current) Power Supplies; DC (direct current) to DC (direct current) Converters; Programmable Power Supplies; High Voltage Power Supplies; Bidirectional DC (direct current) to DC (direct current) Converters; Programmable Electronic Loads; Embedded DC (direct current) to DC (direct current) Converters; Magnets; Ferrite Magnets; Neodymium Magnets; PCIe (Peripheral Component Interconnect express) solid state drives; Solid state drives; Computer Flash Memory chips and cards; CF (Compact Flash) Memory Card; NAND flash memories; Compact Flash memory card; SATA (Serial Advanced Technology Attachment) solid state drives; SD (Secure Digital) Memory Cards; Micro SD (Secure Digital) memory cards; Memory cards; Flash memory controller, namely, the digital circuit that manages the reading and writing of data in NAND flash memory; Memory controller, namely, the digital circuit that manages the reading and writing of data in NAND flash memory; Wireless power coil units; Wireless power transfer units and modules; Wireless power transfer units and modules for the wireless charging of rechargeable batteries in electronic devices, batteries in industrial equipment, batteries in electric vehicles, batteries in wearable devices and batteries in medical devices; FOUP Load Port, namely, a station for supporting a semiconductor wafer transporting container where the cover of the transporting container is separated or separable from the transporting container; Transparent Conductive Film; Solar cells; HDD Heads; Magnetic heads for reading and reproducing data; Magnetic recording heads; Batteries; Electric batteries; Lithium-Ion Batteries; Rechargeable batteries; Rechargeable electric batteries; Solid-State Batteries; ASIC (Application Specific Integrated Circuit); Microcontrollers; Micro modules comprising substrates with built-in ICs [integrated circuits]; Circuit boards; electric circuit boards; printed circuit boards; Downloadable software for use in positioning systems for automotive, robotic, venue or personal applications; Positioning Software; Downloadable software for use in connection with machine learning applications; Thermometers; Aluminum Electrolytic Capacitors, namely, Capacitors with Screw Terminals, Snap-in, Multi Pin, Large Size Capacitors, Ultra-Compact Snap-in capacitors, Axial Capacitors, Hybrid Polymer Capacitors; Capacitors, Single-Ended (Radial) Capacitors; Film Capacitors, namely, Metallized Polyester Capacitors, Metallized Polypropylene Capacitors, EMI (Electromagnetic Interference) Suppression Capacitors, Power Capacitors; PFC (power factor correction) Components, namely, PFC (power factor correction) Capacitors; Harmonic Filtering Components, namely, MV (Medium Voltage) Surge Capacitors, Vacuum Contactors, Active Harmonic Filter, Power Optimizer, Static Var Generator, PFC (power factor correction) Controllers, Capacitor Contactors, Thyristors and thyristor switches, Grid analysis tool for measuring, displaying and storage of electric parameters in low-voltage grids; Optical image stabilization modules for use in cellphone cameras, digital cameras and tablet computers for stabilizing images to be captured via photography and video; Optical image stabilization actuators; Optical image stabilizers; Electronic circuits; Hard disk drive suspensions; Blank magnetic tapes; Blank magnetic discs; Blank magnetic optical disks; Blank optical disks; Blank compact discs, blank DVDs and other digital recording media; Earphones; Headphones; SAW (surface acoustic wave) components and modules Wireless vital data monitoring sensors in the nature of measuring sensors for monitoring duration, frequency or status of pulse rate, heart rate, sleep time, meal time, conversation time, steps, body temperature and physical movements for medical use Humidifiers Design of integrated circuits; Product testing, namely, testing electronic products for electromagnetic emissions and immunity from electromagnetic interferences; Engineering consultation, evaluation and electrical product design and development for others of electronic goods relating to the electromagnetic emissions and immunity from electromagnetic interference of electronic goods; Measuring and evaluating over-the-air signals of mobile terminals that emit RF signals; Development and design of sensor systems for remote process control, for monitoring, system control, diagnostics and error reporting; Design, development and maintenance of computer software; EMC (Electromagnetic Compatibility) testing
40.
THIN FILM CAPACITOR, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC CIRCUIT BOARD HAVING THE THIN FILM CAPACITOR
To provide a thin film capacitor having a pair of terminal electrodes capable of being disposed on the same plane. A thin film capacitor 1 includes a metal foil having a non-roughened center portion and a roughened upper surface, a dielectric film covering the roughened upper surface of the metal foil, an electrode layer contacting the non-roughened center portion of the metal foil through an opening formed in the dielectric film, and an electrode layer contacting the dielectric film without contacting the metal foil. A thickness of the center portion of the metal foil at a position overlapping the electrode layer is larger than a thickness thereof at a position overlapping the electrode layer.
To reduce the influence of disturbance noise in a magnetic sensor provided with an external magnetic body around which a compensation coil is wound. A magnetic sensor includes an external magnetic body that collects a magnetic field to be detected in a magnetosensitive element and a compensation coil. The compensation coil includes a solenoid part wound around the external magnetic body and lead-out parts C1 and C2 that connect both ends of the solenoid part respectively to connection pins P1 and P2. The lead-out part C2 passes through the inner diameter area of the solenoid part to be connected to the connection pin P2. This makes the second lead-out part unlikely to act as an antenna, which can reduce the influence of disturbance noise.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
To prevent, in a magnetic sensor provided with an external magnetic body for collecting magnetic flux in a magnetism detection element, breakage of the external magnetic body. A magnetic sensor includes: a sensor chip having an element formation surface on which magnetism detection elements are formed, an external magnetic body having an end face positioned at the leading end of the longitudinal direction thereof and facing the element formation surface and side surfaces constituting the outer peripheral surface of the cross section thereof perpendicular to the longitudinal direction, and a protective resin at least partially covering the element formation surface and the side surfaces of the external magnetic body. This makes it possible to prevent breakage of the sensor chip and external magnetic body upon application of an external shock.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
43.
HYDROGEN STORAGE ALLOY, NEGATIVE ELECTRODE COMPRISING SAID HYDROGEN STORAGE ALLOY, AND NICKEL HYDROGEN SECONDARY BATTERY COMPRISING SAID NEGATIVE ELECTRODE
1-aab-ccc (where Ln represents one or more elements selected from rare earth elements, Y, and Zr, and the subscripts a, b, and c satisfy the respective relationships a ≤ 0.30, 3.4 ≤ b ≤ 3.7, and c ≤ 0.25). For the Ln described above, at least La among the rare earth elements is selected, and the La accounts for 89.0 mol% or more of the Ln.
09 - Appareils et instruments scientifiques et électriques
10 - Appareils et instruments médicaux
11 - Appareils de contrôle de l'environnement
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
Flip chip mounting machine for the manufacture of electric, electronic and semiconductor devices and components Capacitors; Multilayer Ceramic Chip Capacitors; Multilayer Capacitors; Ceramic Capacitors; Harmonic Filtering Components; Disc Type Capacitors with Lead; High Voltage Ceramic Capacitors; Multilayer Ceramic Chip Capacitors with Dipped Radial Lead; Ultra High Voltage Ceramic Capacitors; PLZT (lead lanthanum zirconate titanate) ceramic capacitors; 3-Terminal Feedthrough Capacitors; SMD (Surface Mounted Device) Inductors; SMT (Surface Mount Technology) Inductors; SMD (Surface Mounted Device) Coils; SMT (Surface Mount Technology) Coils; Surface Mount Inductors; Surface Mount Coils; Leaded Inductors; Leaded Coils; Transponder Coils; High Current Flat Wire Inductors; Coupled Inductors; PFC (Power Factor Correction) Choke Coils; Choke Coils; Power Inductors; EMC (Electromagnetic Compatibility) Components, namely, Chip Beads, Noise Suppression Filters, Noise Filters, ESD (Electrostatic Discharge) Notch Filters, 3-terminal Filters, Signal Line Common Mode Chokes, Signal Line Common Mode Filters, Common Mode Chokes; Common Mode Chokes Coils, Common Mode Filters, Power Line Common Mode Chokes, Power Line Common Mode Filters, Differential Mode Chokes, Clamp Filters, Ferrite Cores with Case, Feedthrough Capacitors, Feedthrough Filters, Power Line EMC Filters, EMC Filters, Active Leakage Current Filters that measure earth leakage currents, Current Filters, EMC (Electro Magnetic Compatibility) Reactors, Output Filters, LCL (Inductor-capacitor-inductor) Filters, Ferrites For EMC Suppression, Noise Suppression Sheets made of magnetic materials and resin, Power Line Chokes, High-Current Ring Core Chokes, D-Core Chokes, EMI (Electromagnetic Interference) Chokes, Power EMC Filters, Automotive Filter, EMC (Electromagnetic Compatibility) Feedthrough Filters; RF (Radio Frequency) Components, namely, Filters for radio frequency suppression, Diplexers, Triplexers, Baluns, Directional Couplers, Signal dividers, Signal splitters, Chip Antennas; Signal isolators, Isolators whose function is to isolate and remove adverse current to protect circuits and stabilize their operation, Circulators, Antennas; Voltage Protection Devices, namely, Multilayer Chip Protectors; Temperature Protection sensors; Temperature Protection thermistors; Diodes; Ceramic Transient Voltage Suppressors; Varistors; Surge Arresters; Current Protection Thermistors; PTC (Positive Temperature Coefficient) Inrush Current Limiters; NTC (Negative Temperature Coefficient) Inrush Current Limiters; Temperature Sensors; NTC (Negative Temperature Coefficient) Thermistors; PTC (Positive Temperature Coefficient) Thermistors; Liquid Level Sensors; Powder Level Sensors in toner for printers; Pressure Measurement Sensors; Humidity Sensors; Surface potential sensors for sensing the surface potential of charged drums; Printer toner Quantity Sensors; Stroke sensors for non-contact location tracking applications; Gear Tooth Sensors to measure gear rotations in motor vehicles and two-wheeled vehicles; Electric Current Sensors; Angle Measurement Sensors; Hall Effect Switches; Linear Hall Effect Sensors; Hall Effect Sensors; Motion Sensors; Inertial Sensors; Vibration sensors; Inclinometers; TMR (Tunnel Magneto Resistance) Sensors; NTC (Negative Temperature Coefficient) Temperature Measurement Sensors; NTC (Negative Temperature Coefficient) Elements; NTC (Negative Temperature Coefficient) Sensor Assembly; NTC (Negative Temperature Coefficient) Sensors; Electric Motor Protection Sensors; Pressure Sensor; Pressure Sensor Transmitters; Ultrasonic Sensors; Clamp AC Current Sensors; Powder Level Sensors for sensing residual printer toner and residual powders thereon; Piezoelectric Printer Toner Sensors; Magnetic Printer Toner Density Sensors; Magnetic Printer Toner Quantity Sensors; Magnetic Printer Toner Sensors; Printer Toner Density Sensors; Printer Toner Sensors; MEMS (Microelectrical Mechanical Systems) Gyroscope Sensors; MEMS (Microelectrical Mechanical Systems) Accelerometers; Buzzers; Microphones; Piezo speakers; Piezoelectric Actuators; Actuators; Piezo Actuators; MEMS Microphones; Microphone; PTC Thermistors as Heating Elements; Multilayer Piezo Actuator Stacks; Apparatus for generating atmospheric pressure plasma; Control and regulating apparatus, electric, for use in relation to the following goods: Apparatus for generating atmospheric pressure plasma; Ozonisers [ozonators]; Chemical and Physical equipment, for use in the following fields: Production of atmospheric pressure plasma, All goods included in class Ozone generators for use in administering ozone therapy; Ozonizers [ozonators] for medical use; Electric apparatus for generating atmospheric-pressure plasma and low-pressure plasma; Electric control and regulating apparatus, and chemical and physical apparatus for generating low-pressure plasma using at least one piezoelectric element and for generating atmospheric-pressure plasma, included in class 9; High-Voltage Contactors; Switching Spark Gaps; Piezoelectric Buzzers; Electromagnetic Buzzers; Ultrasonic Nebulizer Units for scientific use; Transformers; Current Sense Transformers; Step-up Transformers; Pulse Transformers; Ferrite Cores; Noise Suppressing Sheets; Magnetic Sheets; Noise Suppression Shield in the form of magnetic sheets; NFC (Near Field Communication) Antennas Shield; Anechoic Chambers; Radio Wave Absorbers; Power Supplies; Switching power supplies; AC (alternating current) to DC (direct current) Power Supplies; DC (direct current) to DC (direct current) Converters; Programmable Power Supplies; High Voltage Power Supplies; Bidirectional DC (direct current) to DC (direct current) Converters; Programmable Electronic Loads; Embedded DC (direct current) to DC (direct current) Converters; Magnets; Ferrite Magnets; Neodymium Magnets; PCIe (Peripheral Component Interconnect express) solid state drives; Solid state drives; Computer Flash Memory chips and cards; CF (Compact Flash) Memory Card; NAND flash memories; Compact Flash memory card; SATA (Serial Advanced Technology Attachment) solid state drives; SD (Secure Digital) Memory Cards; Micro SD (Secure Digital) memory cards; Memory cards; Flash memory controller, namely, the digital circuit that manages the reading and writing of data in NAND flash memory; Memory controller, namely, the digital circuit that manages the reading and writing of data in NAND flash memory; Wireless power coil units; Wireless power transfer units and modules; Wireless power transfer units and modules for the wireless charging of rechargeable batteries in electronic devices, batteries in industrial equipment, batteries in electric vehicles, batteries in wearable devices and batteries in medical devices; FOUP Load Port, namely, a station for supporting a semiconductor wafer transporting container where the cover of the transporting container is separated or separable from the transporting container; Transparent Conductive Film; Solar cells; HDD Heads; Magnetic heads for reading and reproducing data; Magnetic recording heads; Batteries; Electric batteries; Lithium-Ion Batteries; Rechargeable batteries; Rechargeable electric batteries; Solid-State Batteries; ASIC (Application Specific Integrated Circuit); Microcontrollers; Micro modules comprising substrates with built-in ICs [integrated circuits]; Circuit boards; electric circuit boards; printed circuit boards; Downloadable software for use in positioning systems for automotive, robotic, venue or personal applications; Positioning Software; Downloadable software for use in connection with machine learning applications; Thermometers; Aluminum Electrolytic Capacitors, namely, Capacitors with Screw Terminals, Snap-in, Multi Pin, Large Size Capacitors, Ultra-Compact Snap-in capacitors, Axial Capacitors, Hybrid Polymer Capacitors; Capacitors, Single-Ended (Radial) Capacitors; Film Capacitors, namely, Metallized Polyester Capacitors, Metallized Polypropylene Capacitors, EMI (Electromagnetic Interference) Suppression Capacitors, Power Capacitors; PFC (power factor correction) Components, namely, PFC (power factor correction) Capacitors; Harmonic Filtering Components, namely, MV (Medium Voltage) Surge Capacitors, Vacuum Contactors, Active Harmonic Filter, Power Optimizer, Static Var Generator, PFC (power factor correction) Controllers, Capacitor Contactors, Thyristors and thyristor switches, Grid analysis tool for measuring, displaying and storage of electric parameters in low-voltage grids; Optical image stabilization modules for use in cellphone cameras, digital cameras and tablet computers for stabilizing images to be captured via photography and video; Optical image stabilization actuators; Optical image stabilizers; Electronic circuits; Hard disk drive suspensions; Blank magnetic tapes; Blank magnetic discs; Blank magnetic optical disks; Blank optical disks; Blank compact discs, blank DVDs and other digital recording media; Earphones; Headphones; SAW (surface acoustic wave) components and modules Wireless vital data monitoring sensors in the nature of measuring sensors for monitoring duration, frequency or status of pulse rate, heart rate, sleep time, meal time, conversation time, steps, body temperature and physical movements for medical use Humidifiers Design of integrated circuits; Product testing, namely, testing electronic products for electromagnetic emissions and immunity from electromagnetic interferences; Engineering consultation, evaluation and electrical product design and development for others of electronic goods relating to the electromagnetic emissions and immunity from electromagnetic interference of electronic goods; Measuring and evaluating over-the-air signals of mobile terminals that emit RF signals; Development and design of sensor systems for remote process control, for monitoring, system control, diagnostics and error reporting; Design, development and maintenance of computer software; EMC (Electromagnetic Compatibility) testing
09 - Appareils et instruments scientifiques et électriques
10 - Appareils et instruments médicaux
11 - Appareils de contrôle de l'environnement
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
Flip chip mounting machine for the manufacture of electric, electronic and semiconductor devices and components Capacitors; Multilayer Ceramic Chip Capacitors; Multilayer Capacitors; Ceramic Capacitors; Harmonic Filtering Components; Disc Type Capacitors with Lead; High Voltage Ceramic Capacitors; Multilayer Ceramic Chip Capacitors with Dipped Radial Lead; Ultra High Voltage Ceramic Capacitors; PLZT (lead lanthanum zirconate titanate) ceramic capacitors; 3-Terminal Feedthrough Capacitors; SMD (Surface Mounted Device) Inductors; SMT (Surface Mount Technology) Inductors; SMD (Surface Mounted Device) Coils; SMT (Surface Mount Technology) Coils; Surface Mount Inductors; Surface Mount Coils; Leaded Inductors; Leaded Coils; Transponder Coils; High Current Flat Wire Inductors; Coupled Inductors; PFC (Power Factor Correction) Choke Coils; Choke Coils; Power Inductors; EMC (Electromagnetic Compatibility) Components, namely, Chip Beads, Noise Suppression Filters, Noise Filters, ESD (Electrostatic Discharge) Notch Filters, 3-terminal Filters, Signal Line Common Mode Chokes, Signal Line Common Mode Filters, Common Mode Chokes; Common Mode Chokes Coils, Common Mode Filters, Power Line Common Mode Chokes, Power Line Common Mode Filters, Differential Mode Chokes, Clamp Filters, Ferrite Cores with Case, Feedthrough Capacitors, Feedthrough Filters, Power Line EMC Filters, EMC Filters, Active Leakage Current Filters that measure earth leakage currents, Current Filters, EMC (Electro Magnetic Compatibility) Reactors, Output Filters, LCL (Inductor-capacitor-inductor) Filters, Ferrites For EMC Suppression, Noise Suppression Sheets made of magnetic materials and resin, Power Line Chokes, High-Current Ring Core Chokes, D-Core Chokes, EMI (Electromagnetic Interference) Chokes, Power EMC Filters, Automotive Filter, EMC (Electromagnetic Compatibility) Feedthrough Filters; RF (Radio Frequency) Components, namely, Filters for radio frequency suppression, Diplexers, Triplexers, Baluns, Directional Couplers, Signal dividers, Signal splitters, Chip Antennas; Signal isolators, Isolators whose function is to isolate and remove adverse current to protect circuits and stabilize their operation, Circulators, Antennas; Voltage Protection Devices, namely, Multilayer Chip Protectors; Temperature Protection sensors; Temperature Protection thermistors; Diodes; Ceramic Transient Voltage Suppressors; Varistors; Surge Arresters; Current Protection Thermistors; PTC (Positive Temperature Coefficient) Inrush Current Limiters; NTC (Negative Temperature Coefficient) Inrush Current Limiters; Temperature Sensors; NTC (Negative Temperature Coefficient) Thermistors; PTC (Positive Temperature Coefficient) Thermistors; Liquid Level Sensors; Powder Level Sensors in toner for printers; Pressure Measurement Sensors; Humidity Sensors; Surface potential sensors for sensing the surface potential of charged drums; Printer toner Quantity Sensors; Stroke sensors for non-contact location tracking applications; Gear Tooth Sensors to measure gear rotations in motor vehicles and two-wheeled vehicles; Electric Current Sensors; Angle Measurement Sensors; Hall Effect Switches; Linear Hall Effect Sensors; Hall Effect Sensors; Motion Sensors; Inertial Sensors; Vibration sensors; Inclinometers; TMR (Tunnel Magneto Resistance) Sensors; NTC (Negative Temperature Coefficient) Temperature Measurement Sensors; NTC (Negative Temperature Coefficient) Elements; NTC (Negative Temperature Coefficient) Sensor Assembly; NTC (Negative Temperature Coefficient) Sensors; Electric Motor Protection Sensors; Pressure Sensor; Pressure Sensor Transmitters; Ultrasonic Sensors; Clamp AC Current Sensors; Powder Level Sensors for sensing residual printer toner and residual powders thereon; Piezoelectric Printer Toner Sensors; Magnetic Printer Toner Density Sensors; Magnetic Printer Toner Quantity Sensors; Magnetic Printer Toner Sensors; Printer Toner Density Sensors; Printer Toner Sensors; MEMS (Microelectrical Mechanical Systems) Gyroscope Sensors; MEMS (Microelectrical Mechanical Systems) Accelerometers; Buzzers; Microphones; Piezo speakers; Piezoelectric Actuators; Actuators; Piezo Actuators; MEMS Microphones; Microphone; PTC Thermistors as Heating Elements; Multilayer Piezo Actuator Stacks; Apparatus for generating atmospheric pressure plasma; Control and regulating apparatus, electric, for use in relation to the following goods: Apparatus for generating atmospheric pressure plasma; Ozonisers [ozonators]; Chemical and Physical equipment, for use in the following fields: Production of atmospheric pressure plasma, All goods included in class Ozone generators for use in administering ozone therapy; Ozonizers [ozonators] for medical use; Electric apparatus for generating atmospheric-pressure plasma and low-pressure plasma; Electric control and regulating apparatus, and chemical and physical apparatus for generating low-pressure plasma using at least one piezoelectric element and for generating atmospheric-pressure plasma, included in class 9; High-Voltage Contactors; Switching Spark Gaps; Piezoelectric Buzzers; Electromagnetic Buzzers; Ultrasonic Nebulizer Units for scientific use; Transformers; Current Sense Transformers; Step-up Transformers; Pulse Transformers; Ferrite Cores; Noise Suppressing Sheets; Magnetic Sheets; Noise Suppression Shield in the form of magnetic sheets; NFC (Near Field Communication) Antennas Shield; Anechoic Chambers; Radio Wave Absorbers; Power Supplies; Switching power supplies; AC (alternating current) to DC (direct current) Power Supplies; DC (direct current) to DC (direct current) Converters; Programmable Power Supplies; High Voltage Power Supplies; Bidirectional DC (direct current) to DC (direct current) Converters; Programmable Electronic Loads; Embedded DC (direct current) to DC (direct current) Converters; Magnets; Ferrite Magnets; Neodymium Magnets; PCIe (Peripheral Component Interconnect express) solid state drives; Solid state drives; Computer Flash Memory chips and cards; CF (Compact Flash) Memory Card; NAND flash memories; Compact Flash memory card; SATA (Serial Advanced Technology Attachment) solid state drives; SD (Secure Digital) Memory Cards; Micro SD (Secure Digital) memory cards; Memory cards; Flash memory controller, namely, the digital circuit that manages the reading and writing of data in NAND flash memory; Memory controller, namely, the digital circuit that manages the reading and writing of data in NAND flash memory; Wireless power coil units; Wireless power transfer units and modules; Wireless power transfer units and modules for the wireless charging of rechargeable batteries in electronic devices, batteries in industrial equipment, batteries in electric vehicles, batteries in wearable devices and batteries in medical devices; FOUP Load Port, namely, a station for supporting a semiconductor wafer transporting container where the cover of the transporting container is separated or separable from the transporting container; Transparent Conductive Film; Solar cells; HDD Heads; Magnetic heads for reading and reproducing data; Magnetic recording heads; Batteries; Electric batteries; Lithium-Ion Batteries; Rechargeable batteries; Rechargeable electric batteries; Solid-State Batteries; ASIC (Application Specific Integrated Circuit); Microcontrollers; Micro modules comprising substrates with built-in ICs [integrated circuits]; Circuit boards; electric circuit boards; printed circuit boards; Downloadable software for use in positioning systems for automotive, robotic, venue or personal applications; Positioning Software; Downloadable software for use in connection with machine learning applications; Thermometers; Aluminum Electrolytic Capacitors, namely, Capacitors with Screw Terminals, Snap-in, Multi Pin, Large Size Capacitors, Ultra-Compact Snap-in capacitors, Axial Capacitors, Hybrid Polymer Capacitors; Capacitors, Single-Ended (Radial) Capacitors; Film Capacitors, namely, Metallized Polyester Capacitors, Metallized Polypropylene Capacitors, EMI (Electromagnetic Interference) Suppression Capacitors, Power Capacitors; PFC (power factor correction) Components, namely, PFC (power factor correction) Capacitors; Harmonic Filtering Components, namely, MV (Medium Voltage) Surge Capacitors, Vacuum Contactors, Active Harmonic Filter, Power Optimizer, Static Var Generator, PFC (power factor correction) Controllers, Capacitor Contactors, Thyristors and thyristor switches, Grid analysis tool for measuring, displaying and storage of electric parameters in low-voltage grids; Optical image stabilization modules for use in cellphone cameras, digital cameras and tablet computers for stabilizing images to be captured via photography and video; Optical image stabilization actuators; Optical image stabilizers; Electronic circuits; Hard disk drive suspensions; Blank magnetic tapes; Blank magnetic discs; Blank magnetic optical disks; Blank optical disks; Blank compact discs, blank DVDs and other digital recording media; Earphones; Headphones; SAW (surface acoustic wave) components and modules Wireless vital data monitoring sensors in the nature of measuring sensors for monitoring duration, frequency or status of pulse rate, heart rate, sleep time, meal time, conversation time, steps, body temperature and physical movements for medical use Humidifiers Design of integrated circuits; Product testing, namely, testing electronic products for electromagnetic emissions and immunity from electromagnetic interferences; Engineering consultation, evaluation and electrical product design and development for others of electronic goods relating to the electromagnetic emissions and immunity from electromagnetic interference of electronic goods; Measuring and evaluating over-the-air signals of mobile terminals that emit RF signals; Development and design of sensor systems for remote process control, for monitoring, system control, diagnostics and error reporting; Design, development and maintenance of computer software; EMC (Electromagnetic Compatibility) testing
A coil component includes an element body formed by laminating a plurality of insulator layers, and a pillar part disposed in the element body and extending in a lamination direction of the plurality of insulator layers. The pillar part has a plurality of pillar members laminated in the lamination direction. Between the two pillar members in the lamination direction, a defining part that defines a contact surface between the two pillar members is provided. The defining part is formed of a material different from a material of the pillar part, and is disposed at edges of the two pillar members when viewed from the lamination direction.
H01F 5/04 - Dispositions des connexions électriques aux bobines, p. ex. fils de connexion
H01F 1/03 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité
A sensor including: a base material having a surface on which streaks are formed along a first direction in a plan view; and a conductive film pattern formed on or above the surface and configured to connect mutually different positions in an in-plane direction of the surface in a shape in which a length of a conductive path is longer than a length of a straight line connecting the different positions, in which in a plan view, the shape of the conductive film pattern comprises a shape in which each of straight lines parallel to the first direction passes across a conductive path center line of the conductive film pattern zero times or once but does not pass across the conductive path center line twice or more.
G01L 9/00 - Mesure de la pression permanente, ou quasi permanente d’un fluide ou d’un matériau solide fluent par des éléments électriques ou magnétiques sensibles à la pressionTransmission ou indication par des moyens électriques ou magnétiques du déplacement des éléments mécaniques sensibles à la pression, utilisés pour mesurer la pression permanente ou quasi permanente d’un fluide ou d’un matériau solide fluent
48.
SOFT MAGNETIC METAL POWDER, MAGNETIC CORE, AND MAGNETIC COMPONENT
A soft magnetic metal powder includes soft magnetic metal particles with a particle size of 5.0 μm or more. (y95/y50−y90/y50)/(0.95−0.90) is 20.0 or less, where y95 (μm) denotes D95, y90 (μm) denotes D90, and y50 (μm) denotes D50 of a particle size distribution of the soft magnetic metal particles with a particle size of 5.0 μm or more. A magnetic core includes soft magnetic metal particles with a Heywood diameter of 5.0 μm or more in a section of the magnetic core. (Y95/Y50−Y90/Y50)/(0.95−0.90) is 20.0 or less, where Y95 (μm) denotes D95, Y90 (μm) denotes D90, and Y50 (μm) denotes D50 of a particle size distribution of the soft magnetic metal particles with a Heywood diameter of 5.0 μm or more.
H01F 1/20 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux métaux ou alliages sous forme de particules, p. ex. de poudre
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
A coil component may include a core portion including soft magnetic metal particles and a resin and a winding portion including a conductor wound. The winding portion may be inside the core portion. The core portion may include an axially central region and a coil corner neighboring region. The soft magnetic metal particles may include specific particles having a particle size of 10 μm or more and 50 μm or less. 0
A coil component may include a core portion including a soft magnetic metal material and a winding portion including a conductor wound. The winding portion may be inside the core portion. The core portion may include a central portion and an outer portion. The central portion may be disposed in an inside diameter portion of the winding portion. The outer portion may be disposed in a portion other than the central portion. The central portion may include a first central portion and a second central portion including different materials. The second central portion may be disposed around the first central portion. H, S, and S1 may be within specific ranges, where H denotes a height of the winding portion, S denotes a sectional area of the central portion, and S1 denotes a sectional area of the first central portion.
A nanogranular magnetic film includes first phases comprised of nano-domains dispersed in a second phase. The first phases include Fe and Co. The second phase includes at least one selected from the group consisting of O, N, and F. A CV of Fe/(Fe+Co) of grids is 0.150 or more and 0.500 or less, provided that a measurement range is determined in the nanogranular magnetic film, the measurement range is divided with the grids including at least 80,000 grids each measuring 1 nm×1 nm×1 nm, and Fe/(Fe+Co) of each of the grids is measured in atomic ratio.
[Problem] To provide an electronic component with a structure that facilitates dispersion of stress applied to terminal electrodes from the outside. [Solution] An electronic component 100 includes terminal electrodes E1, E2 located in a conductor layer 71 in a base body 110 and exposed from an outer surface 111, and a coil C1 at least a part of which is located in a conductor layer 74 in the base body 110, one end of which is connected to the terminal electrode E1 via a via conductor 81V, and the other end of which is connected to the terminal electrode E2 via a via conductor 84V. The via conductor 81V has a shape with a diameter that narrows toward the terminal electrode E1, and the via conductor 84V has a shape with a diameter that narrows toward the terminal electrode E2.
H01F 41/04 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants pour la fabrication de bobines
[Problem] To improve insulation between coils in an electronic component having a structure in which a plurality of coils are embedded in an element body that contains a magnetic material. [Solution] A coil component 100 comprises: conductor layers L1-L3 which are embedded in a coil-embedding layer 10A of an element body 10; conductor bumps B1-B4 which are embedded in a bump-embedding layer 10B of the element body 10; and an insulating coating layer 19 which covers a mounting surface 15 of the element body 10 without covering at least some of the conductor bumps B1-B4. The element body 10 includes a magnetic material portion 17 comprising a magnetic material, and a resin material portion 18 comprising a resin material. The resin material portion 18 is positioned between the conductor layers L1-L3 and the magnetic material portion 17. The side faces 11-14 of the element body 10 include a region A comprising the coil-embedding layer 10A and a region B comprising the bump-embedding layer 10B. The conductor layers L1-L3 are embedded in the element body 10 without being exposed from the region A.
A soft magnetic metal particle may include a core particle and an insulation coating formed on a surface of the core particle. The insulation coating may include a first layer, a second layer, and a third layer. The first layer may contact the surface of the core particle, and the second layer may contact the first layer and the third layer. The first layer may include at least Fe, the second layer may include at least Ti, and the third layer may include at least Si.
H01F 1/24 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux métaux ou alliages sous forme de particules, p. ex. de poudre comprimées, frittées ou agglomérées les particules étant isolées
B22F 1/17 - Particules métalliques revêtues de métal
A nanogranular magnetic film includes first phases comprised of nano-domains dispersed in a second phase. The first phases include Fe and Co. The second phase includes a second phase compound including at least one selected from the group consisting of O, N, and F. A measurement range is determined in the nanogranular magnetic film. The measurement range is divided with grids including at least 80,000 grids each measuring 1 nm×1 nm×1 nm. Fe/(Fe+Co) and a concentration of the second phase compound of each of the grids are measured in atomic ratio. Provided that the grids are classified into MX-rich grids and MX-poor grids, a CV of Fe/(Fe+Co) of the MX-rich grids is larger than a CV of Fe/(Fe+Co) of the MX-poor grids.
This magnetized rotary element includes a spin-orbit torque wiring and a first ferromagnetic layer connected to the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a topological insulator in which electrical conductors are dispersed.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
A coil component includes an element body, a first terminal electrode, a second terminal electrode, a first conductor disposed at a position closer to a principal surface in the element body and electrically connected to the first terminal electrode and the second terminal electrode, and a second conductor disposed at a position closer to a principal surface in the element body and electrically connected to the first terminal electrode and the second terminal electrode. The element body is formed of a material having light permeability, and an identification portion formed of a material different from a material of the first conductor is provided on a first surface facing the principal surface in the first conductor.
The present embodiments relate to a PMR write-head structure where the spin-orbit torque (SOT) material is in contact with the main pole in the write gap (WG). In addition, with the write shield (WS) electrically isolated from the side shield (SS) in the present designs, the current can be confined in the SOT material near the main pole, and the device resistance can remain within a reasonable range. It can be shown, using simulations, that the main pole switching rise time can be improved by 18˜24% using spin-orbit torque from heavy metals like platinum.
A magnetoresistance effect element according to the present invention comprises: a substrate; a base layer that is provided on the substrate; and a laminated portion that is provided on the base layer and that comprises a magnetization free layer, a reference layer, and a non-magnetic layer provided between the magnetization free layer and the reference layer. The base layer comprises two or more metal nitride layers, and a metal oxynitride layer provided between a first metal nitride layer and a second metal nitride layer among the two or more metal nitride layers.
An example system includes an array of input nodes that includes a first input node and a second input node. The system also includes a set of multiply accumulate compute (MAC) components coupled to the first and second input nodes and configured to multiply and accumulate the first analog output and the second analog output. The system further includes a classification component coupled to an output of the set of MAC components and configured to classify the outputs of the set of MAC components. The first input node includes a first sensor configured to output a first analog signal according to changes in an external environment and a first analog frontend configured to generate a first analog output corresponding to the first analog signal. The second input node includes a second sensor and a second analog frontend configured to generate a second analog output corresponding to the second analog signal.
G06F 7/53 - Multiplication uniquement en mode parallèle-parallèle, c.-à-d. les deux opérandes étant introduits en parallèle
G06F 7/544 - Méthodes ou dispositions pour effectuer des calculs en utilisant exclusivement une représentation numérique codée, p. ex. en utilisant une représentation binaire, ternaire, décimale utilisant des dispositifs n'établissant pas de contact, p. ex. tube, dispositif à l'état solideMéthodes ou dispositions pour effectuer des calculs en utilisant exclusivement une représentation numérique codée, p. ex. en utilisant une représentation binaire, ternaire, décimale utilisant des dispositifs non spécifiés pour l'évaluation de fonctions par calcul
G06N 3/063 - Réalisation physique, c.-à-d. mise en œuvre matérielle de réseaux neuronaux, de neurones ou de parties de neurone utilisant des moyens électroniques
A multilayer coil component includes: an element body having a pair of first side surfaces opposite to each other in a first direction and a pair of second side surfaces opposite to each other in a second direction orthogonal to the first direction; and a coil disposed inside the element body and having a coil axis extending in a third direction orthogonal to the first direction and the second direction, in which one of the pair of first side surfaces is a mounting surface, and a ratio of a first gap in the first direction between the coil and the mounting surface to a size of the element body in the first direction is 12 to 30% in a cross section viewed in the third direction.
A magnetic sensor device includes a magnetic sensor and a processor. Each of a plurality of detection circuits of the magnetic sensor includes a magnetoresistive (MR) element. The MR element includes a free layer having a magnetic vortex structure and configured so that the center of the magnetic vortex structure moves depending on a target magnetic field. The plurality of detection circuits are configured to generate a plurality of detection signals each of which changes periodically with periodic changes in the direction of the target magnetic field and whose amplitude changes with a change in the strength of the target magnetic field. The processor is configured to generate an angle detection value and a strength detection value based on the plurality of detection signals.
G01D 5/16 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier la résistance
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour mesurer des angles ou des cônesDispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
An antenna device is an antenna device including a mesh-shaped conductor pattern having a plurality of mesh portions, in which the conductor pattern includes a plurality of first electroconductive lines extending in a first direction and a plurality of second electroconductive lines extending in a second direction intersecting the first direction, an opening and a slit extending from the opening to an edge of the conductor pattern are formed in the conductor pattern as a region where the first electroconductive lines and the second electroconductive lines are not formed, a width of the slit is smaller than a width of the opening, and at least a part of the mesh portions arranged at an edge of the slit is opened to the slit.
Disclosed herein is a coil component that includes plural conductor layers embedded in the magnetic element body. Each of the conductor layers includes a coil pattern, and first and second connection patterns exposed from the magnetic element body. The conductor layers includes a first conductor layer positioned at one end portion in the stacking direction, a second conductor layer positioned at the other end portion in the stacking direction, and one or more third conductor layers positioned between the first and second conductor layers. In the second conductor layer, an outer peripheral end of the coil pattern is connected to the second connection pattern through a lead-out pattern. In at least one of the first to third conductor layers, the magnetic element body is disposed in a separation area overlapping the lead-out pattern in the stacking direction.
An example system includes an array of input nodes that includes a first input node and a second input node. The system also includes a set of multiply accumulate compute (MAC) components coupled to the first and second input nodes and configured to multiply and accumulate the first analog output and the second analog output. The system further includes a classification component coupled to an output of the set of MAC components and configured to classify the outputs of the set of MAC components. The first input node includes a first sensor configured to output a first analog signal according to changes in an external environment and a first analog frontend configured to generate a first analog output corresponding to the first analog signal. The second input node includes a second sensor and a second analog frontend configured to generate a second analog output corresponding to the second analog signal.
G06F 7/544 - Méthodes ou dispositions pour effectuer des calculs en utilisant exclusivement une représentation numérique codée, p. ex. en utilisant une représentation binaire, ternaire, décimale utilisant des dispositifs n'établissant pas de contact, p. ex. tube, dispositif à l'état solideMéthodes ou dispositions pour effectuer des calculs en utilisant exclusivement une représentation numérique codée, p. ex. en utilisant une représentation binaire, ternaire, décimale utilisant des dispositifs non spécifiés pour l'évaluation de fonctions par calcul
A switching mechanism is provided. The switching mechanism includes a movable portion, a fixed portion, and a driving assembly. The movable portion is movable relative to the fixed portion. The driving assembly is configured to drive the movable portion to move. The switching mechanism can further include a sensing assembly configured to detect the condition of the movable portion. The sensing assembly includes a first reference object and a first sensing member. The first sensing member corresponds to the first reference object, and the first reference object is adjacent to the first sensing member when the movable portion is in a first condition.
This negative electrode active material layer may contain a negative electrode active material and a fibrous material. The negative electrode active material may contain silicon. The fibrous material may contain at least one kind selected from the group consisting of titanium oxide, potassium titanate, aluminum oxide, silicon carbide, silicon nitride, and silicon oxide. The fiber length of the fibrous material may be 20 μm or more and 150 μm or less. The value obtained by dividing a thickness of the negative electrode active material layer by the fiber length may be 0.4 or more and 1.0 or less.
H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p. ex. liants, charges
H01M 4/02 - Électrodes composées d'un ou comprenant un matériau actif
H01M 4/13 - Électrodes pour accumulateurs à électrolyte non aqueux, p. ex. pour accumulateurs au lithiumLeurs procédés de fabrication
H01M 4/134 - Électrodes à base de métaux, de Si ou d'alliages
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/38 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'éléments simples ou d'alliages
H01M 4/48 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
68.
ELECTRONIC COMPONENT AND SUBSTRATE WITH BUILT-IN ELECTRONIC COMPONENT
[Problem] To provide an electronic component suitable for being built in a substrate for use. [Solution] An electronic component 10 includes a magnetic element body 20 and a metal frame 30 embedded in the magnetic element body 20. The metal frame 30 includes: sections 31 and 32 which are substantially parallel to each other; a section 33 which connects one end of the section 31 and one end of the section 32; a section 34 which is connected to the other end of the section 31 and at least a part of which is exposed from a main surface 21 of the magnetic element body 20; and a section 35 which is connected to the other end of the section 32 and at least a part of which is exposed from a main surface 22 of the magnetic element body 20.
[Problem] To effectively suppress the concentration of an electric field caused when a reverse voltage is applied in a semiconductor device that has a structure in which an outer peripheral trench is provided in a drift layer. [Solution] A semiconductor device 1 comprises a semiconductor substrate 20, a drift layer 30 provided on the semiconductor substrate 20, an anode electrode 40 in contact with the drift layer 30, and a cathode electrode 50 in contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 61 which is provided so as to surround the anode electrode 40 in plan view without overlapping the anode electrode 40 in plan view, an outer peripheral trench 62 which is adjacent to the outer peripheral trench 61 and which is provided outside the outer peripheral trench 61 so as to surround the outer peripheral trench 61 in plan view, and a mesa region 311 which is positioned between the outer peripheral trench 61 and the outer peripheral trench 62. The width Wm1 of the mesa region 311 is less than the width Wt1 of the outer peripheral trench 61.
A metasurface reflector includes: a first metal layer and a second metal layer stacked in a first direction; a dielectric layer provided between the first metal layer and the second metal layer in the first direction; and a protective layer covering a surface of the second metal layer opposite to the dielectric layer. The dielectric layer includes a main surface on which the second metal layer is provided. The metasurface reflector is divided into a plurality of unit regions arranged in a second direction along the main surface and in a third direction along the main surface and intersecting the second direction. The second metal layer includes metal units respectively provided in all or some of the plurality of unit regions. The protective layer is made of a metal having a standard electrode potential higher than that of a metal constituting the second metal layer.
G02B 27/18 - Systèmes ou appareils optiques non prévus dans aucun des groupes , pour projection optique, p. ex. combinaison de miroir, de condensateur et d'objectif
71.
METASURFACE REFLECTOR, PROJECTION DEVICE, AND NEAR-EYE WEARABLE DEVICE
A metasurface reflector includes: a first metal layer and a second metal layer stacked in a first direction; and a dielectric layer provided between the first metal layer and the second metal layer in the first direction. The dielectric layer includes a main surface on which the second metal layer is provided. The metasurface reflector is divided into a plurality of unit regions arranged in a second direction along the main surface and in a third direction along the main surface and intersecting the second direction. The second metal layer includes metal units respectively provided in all or some of the plurality of unit regions. Lengths of metal units, which are arranged in the second direction and set for a same wavelength among the metal units, in the second direction are different from each other.
An example battery system includes one or more battery packs. The battery system further includes a first sensor configured to detect a first property of the battery system and one or more second sensors configured to detect one or more second properties of the battery system. The battery system also includes control circuitry coupled to the one or more second sensors. The control circuitry is configured to detect a potential risk of thermal runaway of the one or more battery packs based on the detection of the one or more second properties, and, in response to detecting the potential risk of thermal runaway, activate the first sensor. The control circuitry is further configured to identify an increased risk of thermal runaway based on detection of the first property of the battery system, and, in response to identifying the increased risk of thermal runaway, disable the battery system.
H01M 10/48 - Accumulateurs combinés à des dispositions pour mesurer, tester ou indiquer l'état des éléments, p. ex. le niveau ou la densité de l'électrolyte
G01N 33/00 - Recherche ou analyse des matériaux par des méthodes spécifiques non couvertes par les groupes
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
H01M 10/42 - Procédés ou dispositions pour assurer le fonctionnement ou l'entretien des éléments secondaires ou des demi-éléments secondaires
An antenna includes a radiation conductor having a circular shape, a feed line configured to feed power to the radiation conductor, and a terminal connected to the feed line, in which impedance of the feed line is greater than impedance of a feed point of the terminal, and a line length of the feed line is longer than a radius of the radiation conductor.
A battery includes an exterior can, an electrode group housed together with an alkaline electrolyte in the exterior can, and a sealing member that seals the exterior can. The electrode group is formed by winding a positive electrode and a negative electrode stacked together with a separator interposed therebetween into a spiral shape and has a columnar overall shape. A protruding negative electrode edge portion that is a partially protruding portion of the negative electrode is located at a lower end surface portion of the electrode group, and the protruding negative electrode edge portion is in direct contact with the inner surface of a bottom wall of the exterior can.
H01M 50/107 - Boîtiers primairesFourreaux ou enveloppes caractérisés par leur forme ou leur structure physique ayant une section transversale courbe, p. ex. ronde ou elliptique
H01M 50/128 - Boîtiers primairesFourreaux ou enveloppes caractérisés par le matériau ayant une structure en couches comprenant au moins trois couches dont au moins deux couches de matériaux inorganiques uniquement
H01M 50/179 - Dispositions pour introduire des connecteurs électriques dans ou à travers des boîtiers adaptées à la forme des cellules pour des cellules ayant une section transversale courbée, p. ex. ronde ou elliptique
H01M 50/188 - Éléments de scellement caractérisés par la position des éléments de scellement les éléments de scellement étant arrangés entre le couvercle et la borne
H01M 50/528 - Connexions électriques fixes, c.-à-d. non prévues pour être déconnectées
H01M 50/533 - Connexions d’électrodes dans un boîtier de batterie caractérisées par la forme des conducteurs ou des languettes
Electronic device member comprises a first substrate, at least one protruding portion that protrudes from the first substrate, and a solder layer, wherein the at least one protruding portion includes at least one side surface, a tip surface, and a connection portion between the at least one side surface and the tip surface, and wherein the solder layer is in contact with the tip surface. At the connection portion, the at least one side surface and the tip surface form obtuse angle.
An electronic component includes: a substrate; a plurality of multilayer capacitors mounted on a first main surface of the substrate; and a sealing part formed of a resin and sealing the plurality of multilayer capacitors. A first external electrode and a second external electrode of the multilayer capacitor are mounted on the substrate by solder. At least a part of adjacent multilayer capacitors overlaps each other when viewed from a direction in which a pair of side surfaces of an element body are opposed to each other, the direction being along the first main surface of the substrate. In the adjacent multilayer capacitors, stacking directions of a plurality of internal electrodes are the same, and a distance between the adjacent multilayer capacitors is ½ or less of a height of the multilayer capacitor mounted on the substrate.
[Problem] To effectively suppress concentration of an electrical field which is generated when a reverse voltage is applied in a semiconductor device having a structure in which an outer peripheral trench is provided to a drift layer. [Solution] A semiconductor device 1 comprises: a semiconductor substrate 20; a drift layer 30 which is provided on the semiconductor substrate 20; an anode electrode 40 which is in contact with the drift layer 30; and a cathode electrode 50 which is in contact with the semiconductor substrate 20. The drift layer 30 has: an outer peripheral trench 61 which is provided along an outer edge 41 of the anode electrode 40 in a manner as to overlap with the outer edge 41 in a plan view; an outer peripheral trench 62 which is adjacent to the outer peripheral trench 61 and is provided at the outer side of the outer peripheral trench 61 in a manner as to surround the outer peripheral trench 61 in the plan view; and a mesa region 311 which is located between the outer peripheral trench 61 and the outer peripheral trench 62. The width Wm1 of the mesa region 311 is narrower than the width Wt1 of the outer peripheral trench 61.
This battery includes: an electrical storage element with positive and negative electrodes and insulating film between the positive and negative electrodes and electrically separates the positive and negative electrodes; and an airtight case housing the electrical storage element, wherein the case includes: a first member having bottom and tubular portions; a second member having a lid-like portion covering an opening of the first member and a surrounding wall portion covering the tubular portion from an outside; and a gasket between an end face of the first member and the second member and between the tubular portion and the second member, and wherein a non-contact portion with which the gasket is not in contact is provided in either one or both of a part of a first surface of the first member that faces the gasket and a part of a second surface of the second member that faces the gasket.
A current collector including: a resin layer having first and second surfaces on opposites sides; and a metal layer including copper. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The yield stress σY1 [MPa] is obtained by expressions (1) and (2) from a resin layer yield stress σY2 [MPa], a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a thickness D3 [μm] of the metal layer:
A current collector including: a resin layer having first and second surfaces on opposites sides; and a metal layer including copper. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The yield stress σY1 [MPa] is obtained by expressions (1) and (2) from a resin layer yield stress σY2 [MPa], a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a thickness D3 [μm] of the metal layer:
σ
Y
1
=
A
×
σ
Y
3
+
(
1
-
A
)
×
σ
Y
2
(
1
)
A
=
D
3
/
(
D
2
+
D
3
)
.
(
2
)
A current collector including: a resin layer having first and second surfaces on opposites sides; and a metal layer including copper. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The yield stress σY1 [MPa] is obtained by expressions (1) and (2) from a resin layer yield stress σY2 [MPa], a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a thickness D3 [μm] of the metal layer:
σ
Y
1
=
A
×
σ
Y
3
+
(
1
-
A
)
×
σ
Y
2
(
1
)
A
=
D
3
/
(
D
2
+
D
3
)
.
(
2
)
The yield stress σY3 [MPa] is obtained by the following expression (3) from a half-value width β [°] of an X-ray diffraction peak having the highest intensity in an X-ray diffraction pattern of the metal layer
A current collector including: a resin layer having first and second surfaces on opposites sides; and a metal layer including copper. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The yield stress σY1 [MPa] is obtained by expressions (1) and (2) from a resin layer yield stress σY2 [MPa], a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a thickness D3 [μm] of the metal layer:
σ
Y
1
=
A
×
σ
Y
3
+
(
1
-
A
)
×
σ
Y
2
(
1
)
A
=
D
3
/
(
D
2
+
D
3
)
.
(
2
)
The yield stress σY3 [MPa] is obtained by the following expression (3) from a half-value width β [°] of an X-ray diffraction peak having the highest intensity in an X-ray diffraction pattern of the metal layer
σ
Y
3
=
(
-
103
+
1
6
44
×
√
β
)
.
(
3
)
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
An element body includes a main surface and a pair of end surfaces. Each external electrode includes a conductive resin layer on the main surface. Each auxiliary internal electrode is disposed in the same layer as a corresponding internal electrode of a plurality of internal electrodes and is electrically connected to the external electrode to which the corresponding internal electrode is not electrically connected. Each auxiliary internal electrode includes first and second electrode portions. The first electrode portion is exposed to a corresponding end surface of the pair of end surfaces and is electrically and physically connected to the external electrode to which the corresponding internal electrode is not electrically connected. The second electrode portion is positioned between the conductive resin layer of the external electrode to which the corresponding internal electrode is not electrically connected and the corresponding internal electrode.
An electronic component includes an element body including a side surface and an external electrode disposed on the side surface. The external electrode includes a conductive resin layer. The conductive resin layer is formed with a ridge extending along at least one direction on the side surface. The conductive resin layer includes a region, on the side surface, having a thickness smaller than a thickness at the ridge.
Disclosed herein is an antenna device that includes a coil pattern having first to third winding parts each having a plurality of turns. The first winding part has an outer peripheral end being opened and an inner peripheral end connected to an outer peripheral end of the second winding part. The second winding part has an inner peripheral end connected to an outer peripheral end of the third winding part. The third winding part has an inner peripheral end being opened. Each turn of the second winding part has a first partial winding part wound concentrically with the third winding part and a second partial winding part protruding radially outward from the first partial winding part and wound about a center axis positioned between the first partial winding part and the first winding part.
A magnetic sensor includes an MR element. The MR element includes a free layer. The free layer has a first surface having a shape that is long in one direction and a second surface located opposite the first surface, and has a thickness that is a dimension in a direction perpendicular to the first surface. The first surface has a first edge and a second edge located at both lateral ends of the first surface. In a given cross section, the thickness at the first edge is smaller than the thickness at a predetermined point on the first surface between the first edge and the second edge.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
The present embodiments relate to a write head design with a patterned hot seed (HS). Particularly, the HS can be patterned as part of a multi-step patterning process that can partially or completely remove portions of the HS at multiple sides to form various designs. For example, the HS can have a two-step cliff design, etching multiple steps around an un-patterned center portion, and a flared angle. The designs of the patterned HS can improve write head performance.
Disclosed herein is an antenna device that includes: a metal plate having a first slit extending in a long side direction thereof and a second slit extending in a short side direction thereof; a first coil disposed so as to overlap with the metal plate in a plan view and circling along an outer edge of the metal plate; and a second coil electrically connected to the first coil, disposed so as to be surrounded by the first coil, and disposed so as to overlap with the first slit. The first slit has a first end that is open to divide the outer edge and a second end terminating without reaching the outer edge. The second slit has a third end that is open to divide the outer edge and a fourth end terminating without reaching the outer edge.
The magnetic memory of the present disclosure comprises a plurality of magnetoresistive effect elements. Each of the magnetoresistive effect elements comprises a reference layer, a magnetization free layer, a tunnel barrier layer provided between the reference layer and the magnetization free layer, a first cap layer provided on the magnetization free layer, a second cap layer; and a ferromagnetic layer provided between the first cap layer and the second cap layer. The ferromagnetic layer has a thickness less than a thickness of the magnetization free layer.
A current collector including: a resin layer having first and second surfaces; and a metal layer including aluminum. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The current collector yield stress σY1 [MPa] is obtained by the following expressions (1) and (2) from a yield stress σY2 [MPa] of the resin layer, a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a metal layer thickness D3 [μm].
A current collector including: a resin layer having first and second surfaces; and a metal layer including aluminum. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The current collector yield stress σY1 [MPa] is obtained by the following expressions (1) and (2) from a yield stress σY2 [MPa] of the resin layer, a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a metal layer thickness D3 [μm].
σY1=A×σY3+(1−A)×σY2 (1)
A current collector including: a resin layer having first and second surfaces; and a metal layer including aluminum. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The current collector yield stress σY1 [MPa] is obtained by the following expressions (1) and (2) from a yield stress σY2 [MPa] of the resin layer, a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a metal layer thickness D3 [μm].
σY1=A×σY3+(1−A)×σY2 (1)
A=D3/(D2+D3) (2)
A current collector including: a resin layer having first and second surfaces; and a metal layer including aluminum. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The current collector yield stress σY1 [MPa] is obtained by the following expressions (1) and (2) from a yield stress σY2 [MPa] of the resin layer, a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a metal layer thickness D3 [μm].
σY1=A×σY3+(1−A)×σY2 (1)
A=D3/(D2+D3) (2)
The metal layer yield stress σY3 [MPa] is obtained by the following expression (3) from a half-value width β [°] of an X-ray diffraction peak having the highest intensity in an X-ray diffraction pattern of the metal layer.
A current collector including: a resin layer having first and second surfaces; and a metal layer including aluminum. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The current collector yield stress σY1 [MPa] is obtained by the following expressions (1) and (2) from a yield stress σY2 [MPa] of the resin layer, a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a metal layer thickness D3 [μm].
σY1=A×σY3+(1−A)×σY2 (1)
A=D3/(D2+D3) (2)
The metal layer yield stress σY3 [MPa] is obtained by the following expression (3) from a half-value width β [°] of an X-ray diffraction peak having the highest intensity in an X-ray diffraction pattern of the metal layer.
σY3=(−259+1285×√β) (3)
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
An equivalent circuit includes a first capacitor having a first capacitance, a circuit part configured to include an inductor component, a capacitor component, and a resistor connected in series with one another, the circuit part being connected in parallel with the first capacitor, and a second capacitor provided between the first capacitor and the circuit part and having a second capacitance. The first capacitance of the first capacitor changes in accordance with a voltage value of a direct current voltage applied to the first capacitor. The second capacitor has the positive second capacitance that changes in accordance with the voltage value of the direct current voltage applied to the first capacitor and that is N times (N>0) the first capacitance of the first capacitor.
This electronic component includes: a base material which has a main surface; an insulating layer which is disposed on the main surface of the base material and has an opening; a conductive layer which is formed in the opening of the insulating layer; and a barrier layer which covers the conductive layer. At least the outer surface of the barrier layer has a shape which has one peak that protrudes upward.
H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 29/41 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative
This electronic component includes: a base material which has a main surface; an insulating layer which is disposed on the main surface of the base material and has a level difference part; a conductive layer which is formed on the level difference part of the insulating layer; and a barrier layer which covers the conductive layer. A surface of the conductive layer, which corresponds to the level difference part, has an inclination.
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japon)
Inventeur(s)
Inoue, Yukari
Terada, Tomohiro
Kimura, Junichi
Uehara, Masato
Hirata, Kenji
Yamada, Hiroshi
Akiyama, Morito
Abrégé
A nitride contains zinc and a group 4 element. The group 4 element contained in the nitride is at least one kind of element selected from the group consisting of titanium and zirconium. A content of zinc in the nitride is expressed as [Zn] atomic %. A total content of the group 4 element in the nitride is expressed as [M] atomic %. In the nitride, [M]/([Zn]+[M]) is more than 20% and less than 50%.
C01B 21/06 - Composés binaires de l'azote avec les métaux, le silicium ou le bore
H10N 30/076 - Formation de parties ou de corps piézo-électriques ou électrostrictifs sur un élément électrique ou sur un autre support par dépôt de couches piézo-électriques ou électrostrictives, p. ex. par impression par aérosol ou par sérigraphie par dépôt en phase vapeur
An electronic component includes an element body and a plurality of inductors disposed in the element body. The plurality of inductors include an inductor unit, an inductor unit, and an inductor unit. Each of the inductor unit, the inductor unit, and the inductor unit has two conductors extending in one direction and a connection conductor connecting respective one ends of the two conductors in the one direction. Respective axial directions of the inductor unit, the inductor unit, and the inductor unit do not overlap each other and are parallel to each other when viewed from the one direction.
This negative electrode active material layer may contain a negative electrode active material and acicular particles. The negative electrode active material may contain silicon. The acicular particles may contain at least one kind selected from the group consisting of titanium oxide, potassium titanate, aluminum oxide, silicon carbide, silicon nitride, and silicon oxide, The length of the minor axis of each of the acicular particles may be 0.1 μm or more and 0.5 μm or less. The aspect ratio of each of the acicular particles may be 1.2 or more and 15.0 or less.
H01M 4/38 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'éléments simples ou d'alliages
H01M 4/02 - Électrodes composées d'un ou comprenant un matériau actif
H01M 4/134 - Électrodes à base de métaux, de Si ou d'alliages
H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p. ex. liants, charges
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
A magnetic sensor device includes a first detection circuit, a second detection circuit, and a processor. The processor is configured to execute first generation processing for generating a first initial detection value, second generation processing for generating a second initial detection value, first correction processing, second correction processing, and determination processing. The first correction processing is processing for correcting the first initial detection value and updating the first initial detection value. The second correction processing is processing for correcting the second initial detection value and updating the second initial detection value. The processor executes the determination processing after alternately executing the first correction processing and the second correction processing.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A magnetic sensor according to the invention has a magnetoresistive element having a multi-layer structure and a magnetically sensitive axis, and at least a soft magnetic body that is arranged near the magnetoresistive element. The soft magnetic body has a sloping line at least at a corner thereof, wherein the sloping line is tilted with respect to two sides of the soft magnetic body that extend to the corner, as viewed in a stacking direction of the magnetoresistive element.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
This irreversible circuit element comprises a conductor, a magnetic body, and an absorber. The conductor is provided with a first terminal and a second terminal, and has a first region that overlaps the magnetic body when viewed from the thickness direction and extends across the first terminal and the second terminal, and a second region that overlaps the absorber when viewed from the thickness direction. The conductor also has recesses and protrusions on the outer periphery when viewed from the thickness direction, and at least some of the recesses and protrusions are located in the second region.
An ultrasonic transducer array including a substrate, a membrane overlying the substrate, the membrane configured to allow movement at ultrasonic frequencies, and a plurality of anchors connected to the substrate and connected to the membrane. The membrane includes a piezoelectric layer, a plurality of first electrodes, and a plurality of second electrodes, wherein each ultrasonic transducer of a plurality of ultrasonic transducers includes at least a first electrode and at least a second electrode. The plurality of anchors includes a first anchor including a first electrical connection for electrically coupling at least one first electrode to control circuitry and a second anchor including a second electrical connection for electrically coupling at least one second electrode. The ultrasonic transducer array could be either a two-dimensional array or a one-dimensional array of ultrasonic transducers.
G06F 3/043 - Numériseurs, p. ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction utilisant la propagation d'ondes acoustiques
A61B 8/00 - Diagnostic utilisant des ondes ultrasonores, sonores ou infrasonores
B06B 1/02 - Procédés ou appareils pour produire des vibrations mécaniques de fréquence infrasonore, sonore ou ultrasonore utilisant l'énergie électrique
B06B 1/06 - Procédés ou appareils pour produire des vibrations mécaniques de fréquence infrasonore, sonore ou ultrasonore utilisant l'énergie électrique fonctionnant par effet piézo-électrique ou par électrostriction
A magnet temperature information output device includes a first element provided on a rotor, a second element provided on a stator, an electric resistance element, and an output section. The first element includes a temperature sensitive element and a first coil. In the temperature sensitive element, electric resistance changes responding to a temperature of the permanent magnet. The first coil is electrically connected to the temperature sensitive element. The second element includes a second coil. The second coil is arranged to be magnetically coupled to the first coil. The electric resistance element is electrically connected to the second element. The output section is electrically connected to the second element and the electric resistance element. The output section is arranged to output an electric signal responding to a magnitude of a voltage drop occurring in the electric resistance element as temperature information regarding the temperature of the permanent magnet.
09 - Appareils et instruments scientifiques et électriques
Produits et services
Electric sensors, electronic sensors, piezo-based materials, and components or devices thereof incorporating the same, capable of providing haptics, tactile or audio feedback for use in electronic or magnetic cards in connection with payment of services, or for use in encoded electronic, magnetic or smart cards containing programming used to protect data, documents and identities, or for use as encoded credit and debit cards
A multilayer feedthrough capacitor includes an element body, a pair of first external electrodes, a second external electrode, and a plurality of internal electrodes. The plurality of internal electrodes include at least one first internal electrode connected to the pair of first external electrodes, at least one second internal electrode connected to the pair of first external electrodes, and at least one third internal electrode connected to the second external electrode. The at least one first internal electrode is connected to the pair of first external electrodes with a first connection width, and the at least one second internal electrode is connected to the pair of first external electrodes with a second connection width larger than the first connection width.
