Provided are a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus that make it possible to suppress any decrease in sensitivity of a phase difference pixel even in a case of miniaturized pixels and to achieve high phase difference performance having fast and excellent focusing performance even in an imaging scenario in which the amount of incident light is low. A pixel unit 20, wherein a phase difference detection pixel group PDXG10 is formed including a greater number of phase difference detection pixels PDPX of the same color (G) (e.g., 5 or more) than the number of pixels NPX (e.g., 4) that form pixel units PU of ordinary pixel groups NPXG11, NPXG12, NPXG14, and a phase difference detection signal acquired by at least one phase difference detection pixel PDPX in a central area ACTR in an arrangement direction and a signal acquired by a pixel PX in an edge area AEDG in the arrangement direction can be read out to a floating diffusion FD that serves as the same (shared) readout node.
Provided are a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus, the solid-state imaging device making it possible to suppress mixing of colors, suppress a decrease in the sensitivity of a phase difference pixel even in miniaturized pixels, and achieve high phase difference performance with fast and good focusing performance even in a photographing scene with a low incident light amount. In a pixel unit 20, a light-blocking film SLDF that prevents incidence of unnecessary light is formed in each boundary portion between pixels, in a photoelectric conversion portion of each of at least some pixels, an element separation portion ESPL that blocks light while separating the photoelectric conversion portion into two or more sections is formed, and the light-blocking film or the element separation portion is formed so as to have strengthened light-blocking capability in either a boundary portion between a phase difference detection pixel PDPX and a normal pixel or a pixel boundary portion within a phase difference detection pixel group.
Provided are a solid-state imaging apparatus, a method for manufacturing the same, and an electronic device with which it is possible to: suppress a decrease in the sensitivity of phase difference-detecting pixels even in the case of miniaturized pixels; realize a high phase difference performance with a high-speed and excellent focusing capability even in an imaged scene exhibiting a low amount of incident light; and, further, read out pixel signals of the same color to the same read-out node in a phase difference-detecting pixel group with a high image quality without reducing the frame rate. A phase difference detecting pixel group PDXG 10 is formed including a plurality of phase difference-detecting pixels PDPX of the same color (G). A pair of phase difference detecting signals read from a first-set phase difference-detecting pixel PDPX1 and a second-set phase difference-detecting pixel PDPX2, on both of which light due to a shared-type micro-lens CMCL 10 is incident, are read into different floating diffusions FD11 and FD12.
Provided are a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus which make it possible to suppress a decrease in sensitivity of a phase difference pixel even in a case of miniaturized pixels and to achieve high phase difference performance having fast and good focusing performance even in a shooting scene with low incident light amount. In a pixel section 20, normal pixel groups NPXG each formed from a plurality of (in this example, four) pixel units PU each including a plurality of (in this example, four) adjacent pixels PX of the same color and a phase difference detection pixel group PDXG for detecting phase difference information for controlling a focus function are mounted together. A phase difference detection pixel group PDXG10 is formed by including a larger number of (5 or more) phase difference detection pixels PDPX of the same color (G) than the number (4) of pixels NPX that form the pixel units PU in the normal pixel groups NPXG11, NPXG12, NPXG14.
A pixel portion includes photodiodes formed on a semiconductor substrate as photoelectric conversion portions, and includes: a high absorption layer (HA layer) for controlling a reflection component of incident light on one surface side of the photodiodes (photoelectric conversion portions), and re-diffusing the incident light in the photoelectric conversion portions, on one surface side of the photodiodes upon which light is incident; and a diffused light suppression structure for suppressing diffused light (caused by light scattering) in a light incident path toward one surface side of the photoelectric conversion portions including the high absorption layer. Due to this, a solid-state imaging apparatus capable of reducing crosstalk between pixels, achieving miniaturization of pixel size, reducing color mixing, and achieving high sensitivity and high performance can be realized.
H04N 5/33 - Transformation des rayonnements infrarouges
H04N 5/369 - Transformation d'informations lumineuses ou analogues en informations électriques utilisant des capteurs d'images à l'état solide [capteurs SSIS] circuits associés à cette dernière
Disclosed are an object of the present disclosure is to provide a solid-state imaging apparatus, a method of manufacturing a solid-state imaging apparatus, and an electronic device, which are capable of realizing superior low illuminance PDAF performance and superior light shielding performance at the same time, and which are capable of realizing higher-accuracy image quality. The pixel portion 20 is divided into a central region RCTR and a peripheral region RPRP, and in all of the pixel units PUP in the peripheral region RPRP, the number NP of same-color pixels PX which a microlens MCL is responsible for making light incident thereon is 2. The number NP is less than the number NC of same-color pixels PX in which a microlens MCL is responsible for making light incident thereon in the pixel unit PUC in the central region RCTR, which is 4. Moreover, the microlens MCL adopted in the central region RCTR and the microlens MCL adopted in the peripheral region RPRP have the same shape.
Disclosed are a solid-state imaging apparatus, a signal processing method of a solid-state imaging apparatus, and an electronic device, which are capable of correcting uneven sensitivities generated by multiple factors in a broad area and realizing the higher-precision image quality. A correction circuit 710 weight a sensitivity Pi corresponding to a pixel signal of each pixel related to correction in a pixel unit PU that is the correction target and a sensitivity Pi corresponding to a pixel signal of each pixel related to correction in at least one same color pixel unit PU and adjacent to the pixel unit PU that is the correction target by a weighting coefficient Wi. Consequently, the correction coefficient μ is calculated by dividing a sum of the weighted sensitivities by a total number n of pixels related to correction.
H04N 25/672 - Traitement du bruit, p. ex. détection, correction, réduction ou élimination du bruit appliqué au bruit à motif fixe, p. ex. non-uniformité de la réponse pour la détection ou la correction de la non-uniformité entre capteurs ou registres de sortie adjacents pour la lecture d'une seule image
H04N 25/61 - Traitement du bruit, p. ex. détection, correction, réduction ou élimination du bruit le bruit provenant uniquement de l'objectif, p. ex. l'éblouissement, l'ombrage, le vignettage ou le "cos4"
H04N 25/671 - Traitement du bruit, p. ex. détection, correction, réduction ou élimination du bruit appliqué au bruit à motif fixe, p. ex. non-uniformité de la réponse pour la détection ou la correction de la non-uniformité
H04N 23/84 - Chaînes de traitement de la caméraLeurs composants pour le traitement de signaux de couleur
H04N 25/13 - Agencement de matrices de filtres colorés [CFA]Mosaïques de filtres caractérisées par les caractéristiques spectrales des éléments filtrants
H04N 25/704 - Pixels spécialement adaptés à la mise au point, p. ex. des ensembles de pixels à différence de phase
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