The present invention provides a method for evaluating a wafer and a wafer manufactured using same, the method including the steps of: preparing a wafer to be evaluated; outputting a flatness image of the wafer by using an optical member; pixelating the flatness image and calculating flatness data corresponding to each pixel; designating a plurality of regions within a radius of 50 mm based on the center of the wafer; calculating a total average value of the flatness data included in the plurality of regions; calculating an average value for each region of the flatness data included in the each region; and calculating a flatness data deviation rate according to equation 1 (see the description of the invention).
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
G01B 11/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la rugosité ou l'irrégularité des surfaces
The present invention provides a method for manufacturing a silicon carbide ingot, comprising the steps of: placing silicon carbide powder in a raw material filling portion in a crucible; and sublimating the silicon carbide powder to form a silicon carbide ingot, wherein, in the placement of the silicon carbide powder, the silicon carbide powder includes a first silicon carbide powder and a second silicon carbide powder, the BET specific surface area of the second silicon carbide powder is larger than the BET specific surface area of the first silicon carbide powder, and the second silicon carbide powder is arranged not to be exposed to the outside of the raw material filling portion by the first silicon carbide powder.
The present invention includes the steps of: arranging a silicon carbide raw material and a seed crystal in a reaction vessel having an inner space; primarily elevating the temperature of the inner space by a heating means surrounding the reaction vessel; secondarily elevating the temperature of the inner space by the heating means while decompressing the inner space; inducing growth of a silicon carbide ingot under the reduced pressure condition after the pressure reduction of the inner space is completed; cooling the temperature of the inner space to room temperature, wherein the inner space includes an upper part in which the seed crystal is disposed and a lower part in which the silicon carbide raw material is disposed and in the secondarily temperature elevating step, a difference between the upper temperature of the inner space and the lower temperature of the inner space is maintained at 50℃ to 100℃.
The present invention provides an apparatus for manufacturing a silicon carbide ingot and a method for manufacturing silicon carbide ingot using same, the apparatus comprising: a crucible main body for accommodating a silicon carbide raw material; a crucible cover disposed on an upper portion of the crucible main body; and a first insulating material surrounding the crucible main body, wherein the first insulating material comprises a 1-1 insulating material and a 1-2 insulating material having different densities, the density of the 1-2 insulating material is greater than the density of the 1-1 insulating material, and the 1-2 insulating material is disposed on top of the 1-1 insulating material.
The present invention provides an apparatus for manufacturing a silicon carbide ingot, comprising: a crucible for accommodating a silicon carbide raw material; a seed crystal arranged at the upper portion of the crucible; and a temperature gradient control unit disposed between the silicon carbide raw material and the seed crystal. In addition, the present invention provides a method for manufacturing a silicon carbide ingot, comprising the steps of: preparing a crucible in which a seed crystal is arranged at the upper portion of the crucible and a silicon carbide raw material is loaded at the lower portion of the crucible; sublimating silicon carbide from the silicon carbide raw material by heating the crucible; and growing the sublimated silicon carbide from the seed crystal to a silicon carbide ingot, wherein the crucible includes a temperature gradient control unit disposed between the silicon carbide raw material and the seed crystal, and the temperature of the sublimated silicon carbide is controlled by the temperature gradient control unit.
The present invention provides an apparatus for manufacturing a silicon carbide ingot and a method for manufacturing a silicon carbide ingot using same, wherein the apparatus comprises: a crucible main body for accommodating a silicon carbide raw material; a crucible cover disposed on an upper portion of the crucible main body; and a heat dissipation control member thermally connected to at least a part of the crucible cover. Additionally, the present invention provides a method for manufacturing a silicon carbide ingot, the method comprising the steps of: preparing a crucible body in which a hydrocarbon raw material is accommodated; covering an inlet of the crucible body with a crucible cover; sublimating silicon carbide from the raw material by heating; and growing a silicon carbide ingot from the sublimated silicon carbide, wherein the temperature of the silicon carbide ingot is controlled by the heat dissipation control member thermally connected to at least a part of the crucible cover.
Disclosed is a method of manufacturing a silicon carbide wafer. The method of manufacturing a silicon carbide wafer includes a step of disposing a silicon carbide block in a crucible; a step of sublimating a silicon carbide included in the silicon carbide block to form a silicon carbide ingot; and a step of processing the silicon carbide ingot.
A silicon carbide powder including carbon; and silicon, wherein a flow index under a major principal consolidation stress of 9 kPa is 0.005 to 0.3, and a flow index under a major principal consolidation stress of 0.3 kPa is 0.01 to 0.5.
A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.
C30B 33/10 - Gravure dans des solutions ou des bains fondus
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
10.
SILICON CARBIDE POWDER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING SILICON CARBIDE INGOT USING THE SAME
A silicon carbide powder having silicon carbide particles including carbon and silicon, wherein a mass ratio of silicon carbide particles having a particle diameter of less than 50 μm after sonication is 10 Wt % or less.
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
In a method for manufacturing a silicon carbide ingot, a silicon carbide ingot, a system for manufacturing a silicon carbide into according to embodiments of the present invention, a crucible assembly comprising a crucible body having an inner space and a crucible cover covering the crucible body, a silicon carbide ingot is grown after disposing a raw material and a silicon carbide seed, wherein a weight of the crucible assembly is set to have a weight ratio of 1.5 to 2.7 when a weight of the raw material is regarded as 1. Thus, a silicon carbide ingot has a large area and reduced defects can be manufactured.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
C30B 23/00 - Croissance des monocristaux par condensation d'un matériau évaporé ou sublimé
13.
METHOD FOR MANUFACTURING SIC WAFER AND METHOD FOR PREPARING SIC INGOT
A method for manufacturing a silicon carbide (SiC) wafer is disclosed. The method for manufacturing a SiC wafer comprises the steps of: placing a SiC block in a crucible; sublimating SiC contained in the SiC block to form a SiC ingot; and processing the SiC ingot.
A SiC ingot includes: a main body including a first cross-sectional plane of the main body and a second cross-sectional plane of the main body facing the first cross-sectional plane; and a protrusion disposed on the second cross-sectional plane and including a convex surface from the second cross-sectional plane of the main body, wherein a first end point disposed at one end of the second cross sectional plane, a second end point disposed at another end of the second cross sectional plane, and a peak point disposed on the convex surface are disposed on a third cross-sectional plane of the main body perpendicular to the first cross-sectional plane, and wherein a radius of curvature of an arc corresponding to a line of intersection between the third cross-sectional plane and the convex surface satisfies Equation 1 below:
A SiC ingot includes: a main body including a first cross-sectional plane of the main body and a second cross-sectional plane of the main body facing the first cross-sectional plane; and a protrusion disposed on the second cross-sectional plane and including a convex surface from the second cross-sectional plane of the main body, wherein a first end point disposed at one end of the second cross sectional plane, a second end point disposed at another end of the second cross sectional plane, and a peak point disposed on the convex surface are disposed on a third cross-sectional plane of the main body perpendicular to the first cross-sectional plane, and wherein a radius of curvature of an arc corresponding to a line of intersection between the third cross-sectional plane and the convex surface satisfies Equation 1 below:
3D≤r≤37D [Equation 1]
A SiC ingot includes: a main body including a first cross-sectional plane of the main body and a second cross-sectional plane of the main body facing the first cross-sectional plane; and a protrusion disposed on the second cross-sectional plane and including a convex surface from the second cross-sectional plane of the main body, wherein a first end point disposed at one end of the second cross sectional plane, a second end point disposed at another end of the second cross sectional plane, and a peak point disposed on the convex surface are disposed on a third cross-sectional plane of the main body perpendicular to the first cross-sectional plane, and wherein a radius of curvature of an arc corresponding to a line of intersection between the third cross-sectional plane and the convex surface satisfies Equation 1 below:
3D≤r≤37D [Equation 1]
where r is the radius of curvature of the arc corresponding to the line of intersection between the third cross-sectional plane and the convex surface, and D is a length of a line of intersection between the first cross-sectional plane and the third cross-sectional plane.
A silicon carbide ingot manufacturing method and a silicon carbide ingot manufacturing system are provided. The silicon carbide ingot manufacturing method and the silicon carbide ingot manufacturing system may change a temperature gradient depending on the growth of an ingot by implementing a guide which has a tilted angle to an external direction from the interior of a reactor, in an operation to grow an ingot during a silicon carbide ingot manufacturing process.
09 - Appareils et instruments scientifiques et électriques
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
electrical and scientific apparatus, namely, semiconductor wafers; semiconductor wafers, namely, silicon carbide single-crystal wafers for semiconductors; semiconductor wafers, namely, silicon carbide wafers for semiconductors scientific and technological services, namely, analysis of semiconductor wafers for others; research and development in the field of semiconductors, namely, analysis of semiconductors for others
09 - Appareils et instruments scientifiques et électriques
40 - Traitement de matériaux; recyclage, purification de l'air et traitement de l'eau
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
semiconductor wafers; ingots being prepared substrates for the manufacture of semi-conductors; silicon carbide single crystal wafers for semiconductors; silicon carbide wafers for semiconductors; semiconductor elements. processing of semiconductor wafers; processing of semiconductor elements. analysis of semiconductor wafers; analysis of semiconductors.
18.
SILICON CARBIDE INGOT MANUFACTURING METHOD, SILICON CARBIDE INGOTS, AND GROWTH SYSTEM THEREFOR
In a silicon carbide ingot manufacturing method, silicon carbide ingots, a silicon carbide ingot manufacturing system, and the like, of the present invention, silicon carbide ingots are provided by a method of preparing a crucible assembly, which comprises a crucible main body that has an inner space and a crucible lid for covering the crucible main body, arranging a raw material and a silicon carbide seed, and then growing silicon carbide ingots, and performing application, and the like, so that the weight of the crucible assembly is 1.5-2.7 on the basis of 1 of the weight of the raw material, and thus silicon carbide ingots having fewer defects even while having a large area are provided.
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
19.
WAFER, EPITAXIAL WAFER, METHOD FOR MANUFACTURING A WAFER AND METHOD FOR MANUFACTURING AN EPITAXIAL WAFER
An epitaxial wafer including a wafer having one surface and an other surface, and an epitaxial layer formed on the one surface of the wafer, wherein a roughness skewness (Rsk) of the one surface is −3 nm to 3 nm, and a roughness average (Ra) of an edge area of the one surface is different from that of a central area of the one surface by −2 nm to 2 nm when the edge area of the one surface is defined as an area between 13.3% and 32.1% of the radius of the wafer in a direction from the edge of the one surface toward the center thereof and the central area of the one surface is defined as an area at 9.4% of the radius of the wafer from the center of the one surface.
C30B 25/08 - Enceintes de réactionEmploi d'un matériau spécifié à cet effet
C30B 25/10 - Chauffage de l'enceinte de réaction ou du substrat
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
