An electromagnetic wave absorber includes multiple resonator units, each of which has SIW resonators, each of which has: a front surface conductor layer formed with a coupling slot into which an electromagnetic wave is introduced; a rear surface conductor layer which is placed opposite to the front surface conductor layer; and a penetration conductor to electrically connect the front surface conductor layer and the rear surface conductor layer, the SIW resonators being different in resonance frequency from each other, and disposed in a multistage form in a lateral direction of the coupling slot, and the multiple resonator units are disposed in a planar form in such a way that the longitudinal direction of the coupling slots belonging to each of the multiple resonator units is oriented in two or more directions.
H01Q 17/00 - Dispositifs pour absorber les ondes rayonnées par une antenneCombinaisons de tels dispositifs avec des éléments ou systèmes d'antennes actives
An erroneous mounting of a standard type semiconductor module and a mirror type semiconductor module is prevented. A semiconductor device includes a standard type semiconductor module and a mirror type semiconductor module disposed side by side in a first direction. An identification mark is provided to an upper surface of a package of at least one of the standard type semiconductor module and the mirror type semiconductor module. The identification mark is located to be displaced in the first direction and a second direction perpendicular to the first direction from a center of the package.
MITSUBISHI ELECTRIC BUILDING SOLUTIONS CORPORATION (Japon)
Mitsubishi Electric Corporation (Japon)
Inventeur(s)
Watanabe, Seiji
Nakazawa, Daisuke
Mizutani, Ayaka
Yokoyama, Kakeru
Yasutomi, Junya
Fujiwara, Sunao
Ono, Yoshiko
Abrégé
A tension adjustment method for an elevator includes an adjustment-amount determination step of determining a first adjustment amount to be applied to a first rope cleat device. When a part of a suspension body from a first end portion to a driving sheave under a state in which a car and a counterweight are positioned at the same height is defined as a first part, the first adjustment amount is determined from a value proportional to a value obtained by dividing a tension adjustment value being a difference between a pre-adjustment tension value of the suspension body and a target tension value by an equivalent spring constant that is determined when the first part and a rope cleat spring of a first rope cleat device are regarded as a series spring.
B66B 7/10 - Aménagements des câbles ou filins pour égalisation de la tension des câbles ou des filins
B66B 5/12 - Utilisation de dispositifs de vérification, de rectification, de mauvais fonctionnement ou de sécurité des ascenseurs réagissant à des conditions de fonctionnement anormales en cas de mou dans le filin ou le câble
A semiconductor device according to the present disclosure includes a dummy active trench including an upper electrode and a lower electrode. The upper electrode is connected to the gate electrode or to the emitter electrode, or at a floating potential. The lower electrode is connected to the gate electrode or to the emitter electrode, or at a floating potential. The dummy active trench includes an upper insulating film formed on a side surface of the upper electrode, a lower insulating film formed on a side surface of the lower electrode, and a boundary insulating film formed between the upper electrode and the lower electrode. The thickness of the upper insulating film in a right-left direction is larger than the thickness of the lower insulating film in the right-left direction. In a sectional view, the area of the upper electrode is smaller than the area of the lower electrode.
In a semiconductor device that drives and controls a semiconductor element, a current control unit is provided to pass a current of pulse shape between a control terminal and a negative electrode terminal of the semiconductor element. A peak detection circuit detects a peak value of a voltage between the control terminal or the negative electrode terminal and a reference potential in a current supply period by the current control unit. A temperature estimation unit calculates an estimated temperature of the semiconductor element based on an output voltage of the peak detection circuit sampled by a voltage detection unit. The timing control unit causes the current control unit to operate to provide the current supply period during at least one of an on-period after the semiconductor element shifts to the on state; and an off-period after the semiconductor element shim to the off state.
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
H02M 7/537 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs, p. ex. onduleurs à impulsions à un seul commutateur
H03K 17/14 - Modifications pour compenser les variations de valeurs physiques, p. ex. de la température
6.
AUTHORIZATION DEVICE, AUTHORIZATION METHOD, AND NON-TRANSITORY COMPUTER READABLE MEDIUM
An authorization device (100) includes a valid condition assessment unit (180) that assesses whether a valid condition is met so as to judge whether an authorization rule is valid or not. The valid condition is a condition which is generated on a basis of a countermeasure scenario to address a vulnerability related to access to a target system storing an electronic file, and which concerns an authorization target requiring authorization for access to the target system. The authorization rule is a rule for the valid condition and authorizes access to the target system.
NICKEL-PLATING STACK, SEMICONDUCTOR DEVICE, MANUFACTURING APPARATUS FOR NICKEL-PLATING STACK, METHOD OF MANUFACTURING NICKEL-PLATING STACK, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A method of manufacturing a nickel-plating stack includes: preparing a nickel plating solution including phosphorus and a sulfur additive, and a plating-target member; and forming a nickel-plating stack on the plating-target member using the nickel plating solution. The nickel-plating stack includes nickel layers having different phosphorus concentrations.
C25D 3/12 - Dépôt électrochimiqueBains utilisés à partir de solutions de nickel ou de cobalt
C25D 5/14 - Dépôt de plusieurs couches du même métal ou de métaux différents au moins une couche étant du nickel ou du chrome plusieurs couches étant du nickel ou du chrome, p. ex. couches doubles ou triples
The carbon dioxide recovery system according to the present disclosure includes an air conditioning device including an outdoor unit with a compressor, a heat exchange, and an outdoor blower, and at least one indoor unit with an indoor blower, and a carbon dioxide recovery device that is provided downstream or upstream of the outdoor blower or the indoor blower and that recovers carbon dioxide using air blowing from the outdoor blower or the indoor blower.
F24F 1/0071 - Éléments intérieurs, p. ex. ventilo-convecteurs comportant des moyens de purification de l’air fourni
F24F 11/77 - Systèmes de commande caractérisés par leurs grandeurs de sortieDétails de construction de tels systèmes pour la commande de l’apport en air traité, p. ex. commande de la pression pour la commande du débit d'air ou de la vitesse de l’air en commandant la vitesse de rotation des ventilateurs
F24F 12/00 - Utilisation de systèmes à récupération d'énergie dans le conditionnement de l'air, la ventilation ou la formation d'écrans d'air
The present invention appropriately sets a server configuration. This server configuration automatic setting device comprises: an evaluation server configuration creation unit that creates each evaluation server configuration; a user feedback acquisition unit that acquires feedback information by causing a user to execute virtual servers respectively having the evaluation server configurations; a server configuration evaluation unit that calculates evaluation values of the respective virtual servers on the basis of the feedback information and information on maintenance costs of the respective virtual servers; and a server configuration determination unit that determines an evaluation server configuration of the virtual server having the highest evaluation value as an adopted server configuration.
The present invention provides a training device that improves insulation performance of a substrate after coating. A training device (1) for obtaining a trained model for inferring the coating condition of a substrate provided with a conductor and an electronic component. The training device (1) comprises: a training data acquisition unit (11) for acquiring first input data and second input data; and a model generation unit (12) for generating a trained model for inferring second input data from the first input data. The first input data includes: substrate information including information on the type and shape of the substrate; conductor information including information on the type and pattern of the conductor; electronic component mounting information including information on the type, shape, and arrangement position of the electronic component; coating material information including information on insulation performance of the coating material; and substrate use environment information including a voltage waveform applied to the conductor on the substrate. The second input data is a coating condition for dielectric breakdown of the coating material to be suppressed or aerial discharge in the substrate to be suppressed.
B05C 9/06 - Appareillages ou installations pour appliquer des liquides ou d'autres matériaux fluides aux surfaces par des moyens non prévus dans l'un des groupes , ou dans lesquels le moyen pour déposer le liquide ou autre matériau fluide n'est pas important pour appliquer deux liquides ou autres matériaux fluides différents, ou le même liquide ou matériau fluide deux fois, sur le même côté de l'ouvrage
B05C 11/10 - Stockage, débit ou réglage du liquide ou d'un autre matériau fluideRécupération de l'excès de liquide ou d'un autre matériau fluide
B05D 1/36 - Applications successives de liquides ou d'autres matériaux fluides, p. ex. sans traitement intermédiaire
B05D 3/00 - Traitement préalable des surfaces sur lesquelles des liquides ou d'autres matériaux fluides doivent être appliquésTraitement ultérieur des revêtements appliqués, p. ex. traitement intermédiaire d'un revêtement déjà appliqué, pour préparer les applications ultérieures de liquides ou d'autres matériaux fluides
B05D 5/12 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces pour obtenir des effets, finis ou des structures de surface particuliers pour obtenir un revêtement ayant des propriétés électriques spécifiques
B05D 7/00 - Procédés, autres que le flocage, spécialement adaptés pour appliquer des liquides ou d'autres matériaux fluides, à des surfaces particulières, ou pour appliquer des liquides ou d'autres matériaux fluides particuliers
11.
PROBE, INSPECTION APPARATUS, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
A probe according to the present disclosure is characterized by having a columnar shape, having a side face which is partially formed of a conductor, and being configured to move by rolling on an object being measured so that the conductor of the side face comes into contact with an electrode of the object being measured.
A water treatment device (10) is characterized in that: the water treatment device comprises a first separation tank (1) in which wastewater (11) is received and separated into first effluent and first sediment (15), a reaction tank (2) in which the first effluent is received and brought into contact with microorganisms for reaction, and a second separation tank in which reacted water is received from the reaction tank and separated into second effluent and second sediment (12); the water treatment device further comprises a sediment modification unit (4) which retrieves at least a portion of the second sediment and generates modified sediment (14) obtained by transforming flocs, which are aggregates of microorganisms contained in the second sediment; and the modified sediment is transferred to the first separation tank, or transferred upstream to the first separation tank, and mixed with the wastewater.
This rotating electrical machine makes it possible to obtain high energy convertability even when the temperature of the interior of the rotating electrical machine is elevated. This invention is provided with a frame (10), a rotor (11), and a stator (13). The rotor (11) and the stator (13) are stored in the interior of the frame (10). The frame (10) is provided with: a refrigerant supply port (15) through which liquefied gas having a temperature of 120K or below and obtained by liquefying fuel gas is supplied as a refrigerant (30); and a refrigerant discharge port (16) for outputting partially or completely vaporized refrigerant (30) to a fuel gas utilization device. The stator (13) is cooled by the refrigerant (30) that is the liquefied gas at 120K or below. The fuel gas is hydrogen gas or liquefied natural gas.
H02K 9/19 - Dispositions de refroidissement ou de ventilation pour machines avec enveloppe fermée et circuit fermé de refroidissement utilisant un agent de refroidissement liquide, p. ex. de l'huile
H02K 9/18 - Dispositions de refroidissement ou de ventilation dans lesquels l'agent de refroidissement gazeux circule entre l'enveloppe de la machine et une chemise extérieure dans lesquels la partie extérieure du circuit fermé comprend un échangeur de chaleur associé structurellement à l'enveloppe de la machine
14.
INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND INFORMATION PROCESSING PROGRAM
A morphological analysis unit (102): analyzes a plurality of pieces of description information, each containing one or more words described in a natural language; and extracts, from each piece of description information, the words described in each piece of description information by identifying the description position of the word in each piece of description information. A label hierarchization processing unit (103) generates a hierarchical structure between words extracted from adjacent description positions.
A fiber-reinforced plastic member (33) has: a fiber-reinforced plastic part (1) comprising a plurality of fiber-reinforced plastic layers (2) and having a corner part (12); and a core (11) disposed on the corner part (12) and provided between two fiber-reinforced plastic layers (2) of the plurality of fiber-reinforced plastic layers (2). The core (11) has a core inner surface part (inner curved surface part (14)) located inside the corner part (12), a core outer surface part (outer curved surface part (15)) located outside the corner part (12), and a core flat surface part (17) disposed between an end of the core inner surface part (inner curved surface part (14)) and an end of the core outer surface part (outer curved surface part (15)).
B29C 70/68 - Façonnage de matières composites, c.-à-d. de matières plastiques comprenant des renforcements, des matières de remplissage ou des parties préformées, p. ex. des inserts en incorporant ou en surmoulant des parties préformées, p. ex. des inserts ou des couches
B29C 43/30 - Fabrication d'objets multicouches ou polychromes
16.
RECEPTION DEVICE, RECEPTION METHOD, CONTROL CIRCUIT, AND STORAGE MEDIUM
A reception device (3) comprises: a correlation coefficient calculation processing unit (41) that calculates, for each frequency hopping channel and for each correlation observation period shorter than a symbol period of a reception signal, a correlation coefficient between the reception signal and a known signal; an inter-observation period phase-difference calculation unit (42) that calculates, on the basis of the correlation coefficient, a first average phase difference that is the average of the phase differences of correlation coefficients between different correlation observation periods; an inter-channel phase-difference calculation unit (43) that calculates, on the basis of the correlation coefficient, a second average phase difference that is the average of the phase differences of correlation coefficients between different frequency hopping channels; and a determination unit (47) that determines a head timing of a spread code on the basis of the average power in the symbol duration of the first average phase difference and the average power in the symbol duration of the second average phase difference.
This optimal attribute search device is configured so as to comprise: an optimal value search unit (2) that, when each of a plurality of values for an attribute of a certain target is assigned as a variable, acquires a first capture function that outputs the difference between a treatment effect, which is the effect when a certain treatment is applied to the target, and a non-treatment effect, which is the effect when the treatment is not applied to the target, and retrieves, as a first optimal value, one value from among the plurality of values for the attribute, on the basis of the output of the first capture function; an observation value acquisition unit (3) that acquires, as a first observation value, an observation value of a treatment effect corresponding to the first optimal value retrieved by the optimal value search unit (2); and a function updating unit (4) that updates the first capture function using the first observation value acquired by the observation value acquisition unit (3). The optimal value search unit (2) searches for the first optimal value on the basis of the output of the first acquisition function that has been updated by the function updating unit (4), and outputs the retrieved first optimal value.
A gas separation system according to the present disclosure comprises: a gas separation device that separates a process gas containing carbon dioxide into a carbon dioxide-rich gas and a residual gas; a gas information acquisition unit that acquires gas information pertaining to the process gas; a pressure adjuster that adjusts the pressure of the process gas inside the gas separation device; a thermometer that measures the temperature of the process gas inside the gas separation device; a temperature adjuster that adjusts the temperature of the process gas inside the gas separation device; and a control device that controls the temperature adjuster on the basis of information from the thermometer and the gas information acquisition unit.
H01M 8/0668 - Élimination du monoxyde de carbone ou du dioxyde de carbone
B01D 53/22 - Séparation de gaz ou de vapeursRécupération de vapeurs de solvants volatils dans les gazÉpuration chimique ou biologique des gaz résiduaires, p. ex. gaz d'échappement des moteurs à combustion, fumées, vapeurs, gaz de combustion ou aérosols par diffusion
The purpose of the present disclosure is to suppress liquid slugging in a refrigeration cycle apparatus provided with an oil separator. A refrigeration cycle apparatus (100) according to one aspect of the present disclosure is provided with a refrigerant circuit, a first oil return pipe (104a), a first solenoid valve (104), a second oil return pipe (105a), a second solenoid valve (105), a pressure detection unit, and a control device (300). The first oil return pipe (104a) forms a connection from an oil separator (102) to a suction pipe of a compressor (101). The second oil return pipe (105a) forms a connection from the oil separator (102) to an inlet pipe of an accumulator (117). The pressure detection unit is provided to each of a first pipe (108) and a second pipe (112), and detects the pressure in each thereof. The control device (300) performs liquid-slugging control by controlling an expansion valve, the first solenoid valve (104), and the second solenoid valve (105) on the basis of pressure data detected by the pressure detection unit, the frequency of the compressor (101), and installation conditions.
This projection device (100) comprises: a projector (14) that is provided to a position outside the field of view of a person (46) if the line of sight of the person (46) is oriented in the horizontal direction when in a standing state, that projects, onto either a wall surface (50) or a floor surface (54) inside a building, light that has passed through a plate-shaped mask pattern on which specific information is written, and that displays the information on either the wall surface (50) or the floor surface (54); a reception unit (12) that receives an instruction from the outside; and a control unit (10) that controls the projector (14) so as to display information based on the instruction received by the reception unit (12).
The purpose of the present invention is to provide technology capable of enhancing the heat dissipation of a heat sink. This power semiconductor device comprises: one or more heat sinks including heat-dissipating fins; and a plurality of semiconductor modules arranged along an airflow direction. First protrusion-and-recess parts are provided on a fin base of the semiconductor module, second protrusion-and-recess parts meshed with the first protrusion-and-recess parts are provided on the heat sink, and, in a plan view, the heat-dissipating fins continuously extend across two or more semiconductor modules adjacent to each other in the airflow direction among the plurality of semiconductor modules.
H01L 23/467 - Dispositions pour le refroidissement, le chauffage, la ventilation ou la compensation de la température impliquant le transfert de chaleur par des fluides en circulation par une circulation de gaz, p. ex. d'air
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
A refrigeration cycle device according to the present invention comprises: a housing which constitutes an outer shape and has an air-supply chamber and a machinery chamber formed on the interior thereof; a machinery chamber-side pipe plate which partitions the interior of the housing into the air-supply chamber and the machinery chamber; a heat exchanger which is provided in the air-supply chamber and performs heat exchange between a refrigerant and air; a blower which is provided in the air-supply chamber and supplies the air to the heat exchanger; a refrigerant pipe which is provided in the machinery chamber and through which the refrigerant flows; and a leakage detection unit which is attached to the air-supply-chamber side of the machinery chamber-side pipe plate and detects the leakage of the refrigerant.
MITSUBISHI ELECTRIC R&D CENTRE EUROPE BV (Pays‑Bas)
MITSUBISHI ELECTRIC CORPORATION (Japon)
Inventeur(s)
Bechihi Adel
Bouttier Arnaud
Abrégé
A method for building a knowledge of an environment content (E) using a plurality of devices (i, j) implements selection of data internal to one of the devices operating as data-collecting node. The selected data are those less redundant with respect to external data newly received from the other devices. With a distributed configuration of the devices, the selected data may be shared with all devices, thereby prioritizing sharing data that are most relevant for enriching the digital representations which are stored in all devices. The method may also allocate more communication resources to transmission of most relevant data. Each device may be an unmanned aerial vehicle carrying a LiDAR sensing unit.
The purpose of the technology of the present disclosure is to calculate a loop lateral-flow current at high accuracy in a short time. A loop lateral-flow current calculation device (101) calculates a loop lateral-flow current that flows when loop switching is performed between two power distribution systems connected to substations belonging to different host systems, the device comprising: a state setting unit (13) that sets a voltage state before the loop switching of the target substations provided for the two power distribution systems; a model generation unit (14) that generates equivalent circuits to the host systems by using a first slack node, and a branch and/or a second slack node; a tuning unit (15) that decides on a parameter for the equivalent circuits to the host systems such that a voltage state, which is before the loop switching of the target substations and calculated using the equivalent circuits to the host systems, matches the voltage state which has been set; and a load-flow calculation unit (16) that calculates a loop lateral-flow current through load-flow calculation by using the equivalent circuits to the host systems and the two power distribution systems.
H02J 3/04 - Circuits pour réseaux principaux ou de distribution, à courant alternatif pour connecter des réseaux de même fréquence, mais provenant de sources différentes
Provided is a ventilation system which can ventilate while individually exchanging heat between air supply and exhaust air for each living room, can ventilate while suppressing loss of thermal energy in each living room, can maintain comfort of a user in the living room, and can simplify a system configuration. To this end, the ventilation system for ventilating the inside of a building in which a living room and a non-living room are provided comprises: a supply air duct for introducing outside air from the outside and supplying the outside air into the building; an exhaust air duct for exhausting the air in the building to the outside; and a heat exchange unit for exchanging heat between the air passing through the supply air duct and the air passing through the exhaust air duct. The living room comprises: a first living room provided with both a supply air unit communicating with the supply air duct and an exhaust air unit communicating with the exhaust air duct; and a second living room provided with a supply air unit communicating with the supply air duct and being capable of circulating air to a non-living room provided with an exhaust air unit communicating with the exhaust air duct. The ventilation system further comprises a ventilation amount changing unit that changes the amount of ventilation of one or both of the supply air unit and the exhaust air unit.
F24F 7/08 - Ventilation avec réseau de gaines à circulation d'air forcée, p. ex. par un ventilateur avec conduits séparés pour l'air fourni et l'air expulsé
To provide a torque estimation apparatus for an internal combustion engine which can learn the variation in the output torque of the internal combustion engine caused by the individual difference and the aging change of the internal combustion engine with good accuracy. A torque estimation apparatus for an internal combustion engine calculates a first estimation torque using a torque characteristic data for first estimation torque; calculates a second estimation torque based on an angular acceleration; learns a deviation between the second estimation torque and a preliminarily set reference value of the second estimation torque, as error learning value; and calculates a value obtained by correcting the first estimation torque by the error learning value, as the third estimation torque.
A semiconductor device includes, in this order: first to third channel layers made of a III-V group semiconductor containing Fe and C and a barrier layer made of a III-V group semiconductor having a wider bandgap than a bandgap of the third channel layer. A concentration profile satisfies below-mentioned conditions of: a) Fe concentration in the second channel layer and the third channel layer gradually decreases toward the barrier layer; b) a maximum value of the C concentration in the third channel layer is larger than an average value of the C concentration in the second channel layer; and c) the maximum value of the C concentration in the third channel layer is smaller than a maximum value of a sum of the Fe concentration and the C concentration in the first channel layer.
H10D 62/60 - Distribution ou concentrations d’impuretés
H10D 30/47 - Transistors FET ayant des canaux à gaz de porteurs de charge de dimension nulle [0D], à une dimension [1D] ou à deux dimensions [2D] ayant des canaux à gaz de porteurs de charge à deux dimensions, p. ex. transistors FET à nanoruban ou transistors à haute mobilité électronique [HEMT]
H10D 62/10 - Formes, dimensions relatives ou dispositions des régions des corps semi-conducteursFormes des corps semi-conducteurs
H10D 62/824 - Hétérojonctions comprenant uniquement des hétérojonctions de matériaux du groupe III-V, p. ex. des hétérojonctions GaN/AlGaN
28.
STORAGE BATTERY SYSTEM AND METHOD FOR CONTROLLING STORAGE BATTERY SYSTEM
A storage battery system of the present disclosure includes: a plurality of storage battery modules each including a BMU and at least one temperature sensor; a control device which controls the plurality of storage battery modules via the BMUs; and an air conditioner of which at least an air volume is controlled for each storage battery module on the basis of a target temperature set for each storage battery module. The control device includes a life prediction unit which predicts a life using a capacity and a measured temperature for each storage battery module, and a temperature control unit which calculates the target temperature for each storage battery module so that the life of each storage battery module predicted at a control start point becomes an averaged life after the control start point, and transmits the target temperature to the air conditioner.
H01M 10/633 - Systèmes de commande caractérisés par des algorithmes, des diagrammes, des détails de logiciel ou similaires
H01M 10/42 - Procédés ou dispositions pour assurer le fonctionnement ou l'entretien des éléments secondaires ou des demi-éléments secondaires
H01M 10/48 - Accumulateurs combinés à des dispositions pour mesurer, tester ou indiquer l'état des éléments, p. ex. le niveau ou la densité de l'électrolyte
H01M 10/613 - Refroidissement ou maintien du froid
H01M 10/627 - Installations fixes, p. ex. ensemble de production d’énergie tampon ou de production d’énergie de secours
H01M 10/6569 - Fluides qui subissent un changement ou une transition de phase liquide-gaz, p. ex. évaporation ou condensation
A semiconductor device includes a semiconductor substrate, a temperature sensing diode provided on the semiconductor substrate, and a protective diode provided on the semiconductor substrate and connected in inverse parallel to the temperature sensing diode, wherein the temperature sensing diode includes a first anode layer that is a p-type semiconductor layer, and a first cathode layer that is adjacent to the first anode layer in plan view and is an n-type semiconductor layer, the protective diode includes a second anode layer that is a p-type semiconductor layer, and a second cathode layer that is adjacent to the second anode layer in plan view and is an n-type semiconductor layer, and a pn junction area of the second anode layer and the second cathode layer in the protective diode is larger than a pn junction area of the first anode layer and the first cathode layer in the temperature sensing diode.
G01K 7/01 - Mesure de la température basée sur l'utilisation d'éléments électriques ou magnétiques directement sensibles à la chaleur utilisant des éléments semi-conducteurs à jonctions PN
H10D 80/20 - Ensembles de plusieurs dispositifs comprenant au moins un dispositif couvert par la présente sous-classe l’au moins un dispositif étant couvert par les groupes , p. ex des ensembles comprenant des condensateurs, des transistors FET de puissance ou des diodes Schottky
H10D 84/00 - Dispositifs intégrés formés dans ou sur des substrats semi-conducteurs qui comprennent uniquement des couches semi-conductrices, p. ex. sur des plaquettes de Si ou sur des plaquettes de GaAs-sur-Si
H10D 89/60 - Dispositifs intégrés comprenant des dispositions pour la protection électrique ou thermique, p. ex. circuits de protection contre les décharges électrostatiques [ESD].
30.
IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, AND COMPUTER READABLE MEDIUM
An Ethernet processing unit (310) receives a plurality of payload packets that stores a plurality of divided images obtained by dividing a captured image. The Ethernet processing unit (310) and a packet discard unit (311) select from the plurality of payload packets, a payload packet that stores a divided image subject to image processing.
G06T 7/73 - Détermination de la position ou de l'orientation des objets ou des caméras utilisant des procédés basés sur les caractéristiques
G05B 19/402 - Commande numérique [CN], c.-à-d. machines fonctionnant automatiquement, en particulier machines-outils, p. ex. dans un milieu de fabrication industriel, afin d'effectuer un positionnement, un mouvement ou des actions coordonnées au moyen de données d'un programme sous forme numérique caractérisée par des dispositions de commande pour le positionnement, p. ex. centrage d'un outil par rapport à un trou dans la pièce à usiner, moyens de détection additionnels pour corriger la position
31.
GATEWAY DEVICE, RELAY METHOD, AND COMPUTER READABLE MEDIUM
A gateway device (10) relays communication between an input and output device (20) and a control device (30). When the gateway device (10) receives a non-safety output being an output signal to control the control state of the input and output device (20) to a non-safe state from the control device (30), it decides whether a safety input being an input signal to control the control state to a safe state during a storage period before reception has been received from the input and output device (20). If it is decided that the safety input has been received, the gateway device (10) does not relay the non-safety output to the input and output device (20), but transmits a safety output being an output signal to control the control state of the input and output device (20) to the safe state, to the input and output device (20).
G05B 19/042 - Commande à programme autre que la commande numérique, c.-à-d. dans des automatismes à séquence ou dans des automates à logique utilisant des processeurs numériques
32.
IMAGE ANALYSIS DEVICE, IMAGE PROCESSING DEVICE, IMAGE PROCESSING SYSTEM, IMAGE PROCESSING METHOD, AND NON-TRANSITORY COMPUTER-READABLE STORAGE MEDIUM
An image analysis device is a device to generate template information from a template image. The image analysis device includes a feature value calculation unit to calculate a feature value of each pixel in the template image and an in-block selection pixel determination unit to divide the template image into a plurality of blocks based on block division information and determine a selection pixel, as a pixel representing a feature in each block, based on the feature value.
G06V 10/75 - Organisation de procédés de l’appariement, p. ex. comparaisons simultanées ou séquentielles des caractéristiques d’images ou de vidéosApproches-approximative-fine, p. ex. approches multi-échellesAppariement de motifs d’image ou de vidéoMesures de proximité dans les espaces de caractéristiques utilisant l’analyse de contexteSélection des dictionnaires
G06V 10/74 - Appariement de motifs d’image ou de vidéoMesures de proximité dans les espaces de caractéristiques
G06V 10/94 - Architectures logicielles ou matérielles spécialement adaptées à la compréhension d’images ou de vidéos
A methane synthesis system according to the present disclosure includes: a co-electrolysis part that obtains hydrogen and carbon monoxide by electrolyzing water and carbon dioxide, a methanation reaction part that obtains a product gas containing methane by a methanation reaction that uses the hydrogen and the carbon monoxide, and a cooler having a distribution channel in which a refrigerant capable of phase transition, is distributed. The cooler cools the methanation reaction part using heat of vaporization from vaporizing at least a portion of the refrigerant on an inside of the distribution channel.
C25B 15/08 - Alimentation ou vidange des réactifs ou des électrolytesRégénération des électrolytes
B01J 4/00 - Dispositifs d'alimentationDispositifs de commande d'alimentation ou d'évacuation
B01J 19/00 - Procédés chimiques, physiques ou physico-chimiques en généralAppareils appropriés
B01J 19/24 - Réacteurs fixes sans élément interne mobile
C09K 5/04 - Substances qui subissent un changement d'état physique lors de leur utilisation le changement d'état se faisant par passage de l'état liquide à l'état vapeur ou vice versa
C25B 9/67 - Moyens de chauffage ou de refroidissement
A pulsed electric field processing apparatus includes: a pulsed power supply that generates a pulse voltage; a pair of electrodes that generates a pulse electric field; a processing chamber that is disposed between the electrodes and includes a space through which a processing target object in a liquid state passes and in which the pulse electric field is generated; a temperature computing unit that computes a processing temperature that is a temperature of the processing target object in the processing chamber on the basis of a resistance value and a preset calibration value, the resistance value being acquired from the pulse voltage and a pulse current flowing through the processing target object in the processing chamber when the pulse voltage is applied to the electrodes; and a power supply control unit that controls the pulsed power supply on the basis of the processing temperature and a preset target temperature.
An object is to provide a technique that makes it possible to change a switching speed depending on a temperature. The semiconductor switching element drive circuit includes an output voltage detection unit that generates a switching signal based on a temperature related to a semiconductor switching element and an output voltage of the semiconductor switching element. The output voltage for generating the switching signal by the output voltage detection unit in a case where the temperature is a first temperature is larger than the output voltage for generating the switching signal by the output voltage detection unit in a case where the temperature is a second temperature lower than the first temperature.
H03K 17/082 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension par réaction du circuit de sortie vers le circuit de commande
H03K 17/08 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension
A distributed methanation system according to the present disclosure includes: a methane generation system that includes a co-electrolysis device and a methane reactor, and generates methane by being supplied with power, water, and carbon dioxide; and a fuel cell power generation system that includes a reformer which converts the methane supplied from the methane generation system into hydrogen and a fuel cell which generates power using the hydrogen supplied from the reformer, in which the fuel cell power generation system includes a circulation flow path which recirculates an off-gas of the hydrogen generated in the fuel cell and a separator which separates carbon dioxide from the off-gas of the hydrogen, and the distributed methanation system further includes a carbon dioxide recovery device which recovers the carbon dioxide separated by the separator.
H01M 8/0612 - Combinaison d’éléments à combustible avec des moyens de production de réactifs ou pour le traitement de résidus avec des moyens de production des réactifs gazeux à partir de matériaux contenant du carbone
B01D 53/02 - Séparation de gaz ou de vapeursRécupération de vapeurs de solvants volatils dans les gazÉpuration chimique ou biologique des gaz résiduaires, p. ex. gaz d'échappement des moteurs à combustion, fumées, vapeurs, gaz de combustion ou aérosols par adsorption, p. ex. chromatographie préparatoire en phase gazeuse
B01J 19/00 - Procédés chimiques, physiques ou physico-chimiques en généralAppareils appropriés
B01J 19/24 - Réacteurs fixes sans élément interne mobile
C25B 15/02 - Commande ou régulation des opérations
C25B 15/08 - Alimentation ou vidange des réactifs ou des électrolytesRégénération des électrolytes
A methane generation system according to the present disclosure includes a water supply path that supplies water or water vapor, a carbon dioxide supply path that supplies carbon dioxide, a power supply path that supplies power, an SOLO co-electrolysis device to which the water supply path, the carbon dioxide supply path and the power supply path are connected, a methane reactor, a connection path that connects the SOEC co-electrolysis device and the methane reactor, and a first heat exchange section that performs heat exchange between the SOEC co electrolysis device and the methane reactor.
A semiconductor device includes: a heat spreader; a semiconductor element; a cooler; an insulating layer; and a sealing member. The heat spreader has a first surface and a second surface opposite to the first surface. The semiconductor element has a third surface and a fourth surface opposite to the third surface, and is disposed such that the fourth surface faces the first surface. The cooler is disposed to face the first surface with the insulating layer interposed therebetween. A flow path through which refrigerant flows is provided inside the cooler. The sealing member seals the heat spreader, the semiconductor element and the cooler. In a plan view, a projected area of the cooler is equal to or less than a projected area of the heat spreader.
H01L 23/473 - Dispositions pour le refroidissement, le chauffage, la ventilation ou la compensation de la température impliquant le transfert de chaleur par des fluides en circulation par une circulation de liquides
H01L 21/56 - Encapsulations, p. ex. couches d’encapsulation, revêtements
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
A key generation device (200) generates an encryption key PK, a decryption key SK and a homomorphic operation key EVK. An encryption device (300) generates ciphertext data CDPK (m) by encrypting plaintext data m with the encryption key PK. A denial random number generation device (400) takes the encryption key PK and the ciphertext data CDPK (m) as input to generate denial random number data r* for denying the disclosure of plaintext data m. A homomorphic operation device (500) generates post-homomorphic operation ciphertext data CMPK (M) by performing a homomorphic operation on the calculation result of the plaintext data with the homomorphic operation key EVK. A decryption device (600) decrypts the post-homomorphic operation ciphertext data CMPK (M).
This debugging support program causes a computer to function as a cause device designation accepting unit (110), a result device designation accepting unit (120), a local dependency identifying unit (130), and a display control unit (140). The cause device designation accepting unit (110) accepts designation of a cause device selected from among a plurality of devices. The result device designation accepting unit (120) accepts designation of a result device that relies on the cause device. The local dependency identifying unit (130) identifies a local dependency between the cause device and the result device, the local dependency being represented by a partial tree structure having the cause device as a root node and the result device as a leaf node. The partial tree structure includes, as nodes other than the root node and the leaf node, only intermediate devices, which are devices, among the devices affected by the cause device, that affect the result device.
G05B 19/05 - Automates à logique programmables, p. ex. simulant les interconnexions logiques de signaux d'après des diagrammes en échelle ou des organigrammes
This ion-removing pH adjustment device comprises: a water treatment unit having a first electrode, a second electrode, and a separator through which a liquid passes, the separator being disposed so as to separate the first electrode and the second electrode and having electrical insulation properties; a power supply unit that applies electricity to the water treatment unit; and a pH adjustment operation control unit that controls the operation of the power supply unit. The pH adjustment operation control unit causes the power supply unit to apply electricity to the first electrode and the second electrode to execute ion removal and pH adjustment.
C02F 1/469 - Traitement de l'eau, des eaux résiduaires ou des eaux d'égout par des procédés électrochimiques par séparation électrochimique, p. ex. par électro-osmose, électrodialyse, électrophorèse
C02F 5/00 - Adoucissement de l'eauPrévention de l'entartrageAddition à l'eau d'agents antitartre ou détartrants, p. ex. addition d'agents séquestrants
42.
SEALED CONTAINER FOR COMPRESSOR, COMPRESSOR, REFRIGERATION CYCLE DEVICE, AND METHOD FOR MANUFACTURING SEALED CONTAINER FOR COMPRESSOR
This sealed container for a compressor has a tubular body, and a lid that is provided on one end side of the body in an axial direction. The body comprises a curved section that is integrally formed on the one end side and is formed into a convex curve, the lid being fixed to said curved section. The curved section comprises a punched section that is formed by punching the one end side using a punch and a die. A droop and a shear surface are formed on the inner peripheral surface of the punched section, from the outside toward the inside of the punched section. The lid is fixed to the entire inner periphery of the punch section by resistance welding.
F04B 39/12 - Carcasses d'enveloppeCylindresCulassesConnexions des tubulures pour fluide
F04C 29/00 - Parties constitutives, détails ou accessoires de pompes ou d'installations de pompage spécialement adaptées pour les fluides compressibles non couverts dans les groupes
This motor includes: a rotor; a rotary shaft fixed to the rotor, said rotary shaft projecting from the rotor to first and second sides in the axial direction of the rotary shaft, the extent of projection on the first side being greater than the the extent of projection on the second side; a stator facing the rotor in the radial direction of the rotary shaft; a first bearing supporting the rotary shaft on the first side; a second bearing supporting the rotary shaft on the second side; a conductive bracket holding the second bearing; and a metal rod provided between the second-side end surface of the rotary shaft and the bracket. The metal rod has a contact part that contacts the end surface of the rotary shaft, the contact part being movable in the axial direction. The bracket has a through hole.
A simulation coordination device (100) executes simulation in parallel even for three or more inter-coordinated simulations, thus enhancing time efficiency, and also ensures accuracy in the simulations as a whole. A prior processing indication unit (110) executes a mock run by including predicted values among processing results of a plurality of simulations that are coordinated with one another and each have individual cycles, and calculates a first provisional processing result (62). A current processing indication unit (120) uses all of the processing results of the plurality of simulations as past processing results to execute a mock run, and calculates a second provisional processing result (63). A conformity determination unit (130) calculates the difference between the first provisional processing result (62) and the second provisional processing result (63), and determines whether the difference has exceeded a threshold value (64). A synchronization control unit (140) adjusts the cycles and executes a mock re-run if the difference is determined to have exceeded the threshold value (64).
A control device (10) controls a first FA system (110) on which a first communication resource management protocol is implemented. The control device (10) performs processing conforming to a second communication resource management protocol for and on behalf of a FA apparatus (20). When a setting change to the FA apparatus (20) constituting the first FA system (110) is requested from a second FA system (120) in which a second communication resource management protocol different from the first communication resource management protocol is implemented, the control device (10) determines whether or not the setting change is permitted in the first FA system (110). When it is determined that the setting change is permitted, the control device (10) changes the setting of the FA apparatus (20).
H04L 41/0896 - Gestion de la bande passante ou de la capacité des réseaux, c.-à-d. augmentation ou diminution automatique des capacités
H04L 12/28 - Réseaux de données à commutation caractérisés par la configuration des liaisons, p. ex. réseaux locaux [LAN Local Area Networks] ou réseaux étendus [WAN Wide Area Networks]
H04L 41/0873 - Vérification des conflits de configuration entre les éléments du réseau
46.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A bonding layer (15) is disposed directly on a diamond substrate (16) and comprises an amorphous material. A silicon crystal layer (11) is bonded to the diamond substrate (16) with at least the bonding layer (15) therebetween. A buffer layer (12) comprises a nitride containing an aluminum atom, and is disposed on the bonding layer (15) with at least the silicon crystal layer (11) therebetween. A nitride semiconductor layer (13) is disposed directly on the buffer layer (12) and has a composition different from the composition of the buffer layer (12).
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
H01L 21/20 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale
H01L 21/338 - Transistors à effet de champ à grille Schottky
H01L 29/812 - Transistors à effet de champ l'effet de champ étant produit par une jonction PN ou une autre jonction redresseuse à grille Schottky
A fuel cell system according to the present disclosure comprises: a fuel cell that has an anode and a cathode; a branching unit that branches an anode off-gas discharged from the anode into a branched gas and a recycled gas; a gas separation device that separates the branched gas into a carbon dioxide-rich gas having a higher carbon dioxide concentration than the branched gas and a residual gas having a lower carbon dioxide concentration than the branched gas; a pressure regulator that regulates the pressure of the anode off-gas inside the gas separation device; a pressure gauge that acquires the pressure of the branched gas; a gas information acquisition unit that acquires gas information relating to at least the composition and the flow rate of the branched gas; and a control device that controls the pressure regulator on the basis of the pressure acquired by the pressure gauge and the gas information acquired by the gas information acquisition unit.
H01M 8/0668 - Élimination du monoxyde de carbone ou du dioxyde de carbone
H01M 8/04 - Dispositions auxiliaires, p. ex. pour la commande de la pression ou pour la circulation des fluides
H01M 8/0606 - Combinaison d’éléments à combustible avec des moyens de production de réactifs ou pour le traitement de résidus avec des moyens de production des réactifs gazeux
H01M 8/04089 - Dispositions pour la commande des paramètres des réactifs, p. ex. de la pression ou de la concentration des réactifs gazeux
A fuel cell system according to the present disclosure comprises: a fuel cell having an anode and a cathode; a branch unit for branching an anode off-gas discharged from the anode into a branch gas and a recycle gas; a separation device having a plurality of separation units for separating a specific gas component from the branch gas; a compressor for boosting the branch gas; a pressure gauge for measuring the pressure of the branch gas introduced into the separation device; a pressure regulator for adjusting the pressure of the branch gas; a gas information acquisition unit for acquiring the composition and flow rate of the branch gas; and a distribution mechanism for distributing the branch gas to the plurality of separation units.
H01M 8/0662 - Traitement des réactifs gazeux ou des résidus gazeux, p. ex. nettoyage
B01D 53/22 - Séparation de gaz ou de vapeursRécupération de vapeurs de solvants volatils dans les gazÉpuration chimique ou biologique des gaz résiduaires, p. ex. gaz d'échappement des moteurs à combustion, fumées, vapeurs, gaz de combustion ou aérosols par diffusion
49.
AN INFRASTRUCTURE-ASSISTED CONGESTION CONTROL ALGORITHM FOR SIDELINK COMMUNICATIONS
MITSUBISHI ELECTRIC R&D CENTRE EUROPE BV (Pays‑Bas)
MITSUBISHI ELECTRIC CORPORATION (Japon)
Inventeur(s)
Bouttier Arnaud
Abrégé
The invention relates to a communication method comprising: - determining a congestion ratio for a communication channel based on measured data; - obtaining, for each terminal in a set of terminals (312, 316, 324), a requirement (504) for radio resources related to the communication channel; and - determining, individually for each terminal in the set of terminals, a respective congestion control table (520) based on the determined congestion ratio of the communication channel and further based on the requirement of each respective terminal.
A screen data creation device (50) creates screen data (500), which is data on a display screen of a programmable display device. A screen-setting unit (511) sets a video display area in which a video captured by a camera is displayed on the display screen. An event-setting unit (512) sets an event to be executed when the video is displayed in the video display area. A screen data creation unit (513) creates screen data (500) indicating that the video display area set by the screen-setting unit (511) is to be displayed on the display screen, and the event set by the event-setting unit (512) is associated with a position relative to the video display area.
A morphological analysis unit (102) analyzes a plurality of pieces of description information each describing one or more natural-language words, and extracts a word described in each piece of description information from the pieces of description information by identifying the description position of the word in the pieces of description information. A label hierarchization processing unit (103) generates a hierarchical structure between words extracted from neighboring description positions.
G06F 40/284 - Analyse lexicale, p. ex. segmentation en unités ou cooccurrence
G06F 16/907 - Recherche caractérisée par l’utilisation de métadonnées, p. ex. de métadonnées ne provenant pas du contenu ou de métadonnées générées manuellement
52.
MOVEMENT CONTROL DEVICE, MOBILE BODY DEVICE, MOVEMENT CONTROL SYSTEM, AND MOVEMENT CONTROL METHOD
A movement control device (10A) controls a mobile body device (1A) that associates sensor data with time information indicating the time at which sensor data was acquired and position information indicating the position at which sensor data was acquired. The movement control device is characterized by being provided with a movement restriction unit (19) that restricts the movement of the mobile body device (1A) on the basis of a time synchronization error indicating an error in the internal time of the mobile body device (1A) with respect to a reference time outside the mobile body device (1A).
Provided is an information processing device that allows a user to confirm, before performing an operation, a range in which a device can be operated. The present invention comprises: an image display unit 13 that displays a stereoscopic image creating an illusion of a 3D virtual shape, which is three-dimensional, for a user by causing the right eye and the left eye of the user to respectively see different images; a tactile sensation generation unit 23 that generates a tactile sensation in a tactile sensation range which has a similar shape to that of the 3D virtual shape; and a control unit (corresponding to an image control unit 12) that executes an operation on the stereoscopic image when the user performs an operation in the tactile sensation range during generation of the tactile sensation in the tactile sensation range by the tactile sensation generation unit 23.
G06F 3/04815 - Interaction s’effectuant dans un environnement basé sur des métaphores ou des objets avec un affichage tridimensionnel, p. ex. modification du point de vue de l’utilisateur par rapport à l’environnement ou l’objet
G06F 3/01 - Dispositions d'entrée ou dispositions d'entrée et de sortie combinées pour l'interaction entre l'utilisateur et le calculateur
Provided is a semiconductor device for which a miniaturization inhibiting factor of the device size is relaxed. The semiconductor device includes at least one sealing body, a terminal, a cooler, and an insulating member. The at least one sealing body contains a semiconductor element. The terminal is electrically connected to the semiconductor element and protrudes from the at least one sealing body. The cooler is joined to the at least one sealing body. The insulating member is provided around the at least one sealing body and on an upper surface of the cooler. The cooler includes a fastening part for securing the cooler. The insulating member includes a wall-shaped protrusion part provided between the fastening part and the terminal.
H01L 23/40 - Supports ou moyens de fixation pour les dispositifs de refroidissement ou de chauffage amovibles
H01L 23/29 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par le matériau
H01L 23/36 - Emploi de matériaux spécifiés ou mise en forme, en vue de faciliter le refroidissement ou le chauffage, p. ex. dissipateurs de chaleur
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
Even when a drawing is a general one, processing for displaying the drawing and an image having a coordinate system different from that of the drawing in a superimposed manner is performed. A provisional superimposed diagram(s) is generated by using information about the parts in the drawing and information about parts in the image, overlap indexes showing overlaps between the parts in the drawing and the parts in the image are calculated to determine the parts in the image corresponding to the parts in the drawing in the provisional superimposed diagram(s), and an aggregate overlap index(es) in the provisional superimposed diagram(s) are calculated by summing the overlap indexes to determine a corresponding relationship between the parts in the drawing and the parts in the image on the basis of the aggregate overlap index(es).
G06T 11/60 - Édition de figures et de texteCombinaison de figures ou de texte
G06V 10/75 - Organisation de procédés de l’appariement, p. ex. comparaisons simultanées ou séquentielles des caractéristiques d’images ou de vidéosApproches-approximative-fine, p. ex. approches multi-échellesAppariement de motifs d’image ou de vidéoMesures de proximité dans les espaces de caractéristiques utilisant l’analyse de contexteSélection des dictionnaires
57.
PARTICLE ANALYSIS DEVICE, PARTICLE ANALYSIS SYSTEM, AND PARTICLE ANALYSIS METHOD
A particle analysis device includes: an acquiring unit to acquire a multi-viewpoint image obtained by synthesizing captured images of a lens array on which an image of light from a particle irradiated with light are formed via a main lens, the captured images being captured simultaneously from mutually different viewpoints by a plurality of cameras; a sensing unit to sense a light intensity pattern of scattered light scattered from the particle on the basis of the multi-viewpoint image acquired; an analyzing unit to analyze a scattering solid angle of scattered light relative to an optical axis of the main lens as a center on the basis of the light intensity pattern of the scattered light sensed; and a calculating unit to calculate a molecular weight and particle size of the particle on the basis of the scattering solid angle of the scattered light analyzed.
A data processing device according to the present disclosed technology includes a processing circuit, in which the processing circuit sequentially updates a gram matrix in a form of SVD in a learning phase, and the processing circuit calculates a variance-covariance matrix in the form of SVD on the basis of SVD related to the gram matrix in Finalization of the learning phase.
SCENARIO PARAMETER OPTIMIZATION DEVICE, SCENARIO PARAMETER OPTIMIZATION METHOD, STORAGE MEDIUM HAVING STORED THEREIN A SCENARIO PARAMETER OPTIMIZATION PROGRAM, AND CONTROL LOGIC INSPECTION SYSTEM
A scenario parameter optimization device includes: an object function value calculation unit that calculates an object function value of a predetermined event, and an event occurrence time at which the predetermined event occurs on the basis of an execution result of a simulation test of a scenario including a first agent and a second agent, executed on the basis of a scenario parameter; a responsibility determination unit that determines whether or not the first agent is responsible for the occurrence of the predetermined event from a situation at a responsibility determination time before the event occurrence time, and outputs a result of the determination as a responsibility determination result; and a scenario parameter optimization unit that optimizes the scenario parameter in such a manner that the object function value decreases and the first agent is determined to be responsible for the occurrence of the predetermined event.
G05B 13/04 - Systèmes de commande adaptatifs, c.-à-d. systèmes se réglant eux-mêmes automatiquement pour obtenir un rendement optimal suivant un critère prédéterminé électriques impliquant l'usage de modèles ou de simulateurs
An optical transmission apparatus including: a control encoding unit that outputs a control information sequence by performing error correction encoding processing on control information including information on a multilevel modulation scheme to be used for a main signal information sequence; a main encoding unit that generates the main signal information sequence by performing error correction encoding processing on main signal information, the error correction encoding processing corresponding to the multilevel modulation scheme; a selection circuit that outputs the main signal information sequence after inserting the control information sequence into the main signal information sequence; and a mapping unit that generates the multilevel-modulated optical transmission signal by performing mapping processing on the control information sequence by using the multilevel modulation scheme, the control information sequence having been output by the selection circuit, and performing mapping processing on the main signal information sequence by using the multilevel modulation scheme.
A sensing system includes: a transmitter including transmitting antenna elements, controlling timings of generations of a radar signal, a code, and a carrier signal for dividing a frequency band available into subbands and periodically switching the subbands, multiplying the radar signal and the code for each transmitting antenna element, generating a high frequency signal having a bandwidth of the subband using the radar signal multiplied by the code and the carrier signal, and transmitting the high frequency signal from each transmitting antenna element; and a receiver including receiving antenna elements, receiving the high frequency signals transmitted from the transmitter and reflected or scattered by a measurement target, generating channel information between the transmitter and the receiver using the carrier signal, the radar signal, and the code, specifying a position of the measurement target using the channel information, and generating an image of the measurement target by performing focus correction.
G01S 7/03 - Détails de sous-ensembles HF spécialement adaptés à ceux-ci, p. ex. communs à l'émetteur et au récepteur
G01S 13/90 - Radar ou systèmes analogues, spécialement adaptés pour des applications spécifiques pour la cartographie ou la représentation utilisant des techniques d'antenne synthétique
62.
TARGET DETECTION DEVICE AND TARGET DETECTION METHOD
A target detection device includes: a signal distribution unit to acquire a reception signal indicating a reflected wave of a pulse wave every time the pulse wave is emitted into space and divide acquired reception signals; signal compression units to compress respective reception signals after dividing by the signal distribution unit; and signal recovery units to recover a delay time of a reception signal after compression by any one signal compression unit among the signal compression units and a complex amplitude of the reception signal after compression and output a recovery signal indicating the delay time and the complex amplitude. Further, the target detection device includes a correlation processing unit to extract signal components correlated with each other from recovery signals output from the signal recovery units, and a target detection unit to detect a target on the basis of the signal components extracted by the correlation processing unit.
An estimation device includes an input unit that generates supervised data including causal variables, process types, and outcome variable for each of multiple processes, and a training unit that uses the supervised data to generate a learning model by learning the outcome variables from the causal variables and the process types for each of the processes.
A semiconductor optical integrated element includes a laser active layer, an optical modulation active layer, an optical amplification active layer, a first upper clad layer, and a second upper clad layer. The optical modulation active layer is juxtaposed to the laser active layer. The optical amplification active layer is juxtaposed to the optical modulation active layer. The first upper clad layer has a first index of refraction and is arranged on an upper surface of the laser active layer and an upper surface of the optical modulation active layer. The second upper clad layer has a second index of refraction different, and is juxtaposed to the first upper clad layer and arranged on an upper surface of the optical amplification active layer. Amplified laser beams outputted from the optical amplification active layer are outputted as being shifted above modulated laser beams outputted from the optical modulation active layer.
H01S 5/026 - Composants intégrés monolithiques, p. ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs
A power conversion device includes a power storage element, a power converter, and a control device. The control device includes: a power generator simulation unit to simulate characteristics of a synchronous power generator based on an active power command value and active power, to generate an angular frequency deviation; a constant setting unit to set at least one of an inertia constant and a damping constant of the synchronous power generator; a phase generation unit to generate a reference phase, based on the angular frequency deviation and a reference angular frequency; and a signal generation unit to generate a control signal, based on the reference phase and a reference voltage command value. When the AC voltage of the power system fluctuates, the constant setting unit sets at least one of the inertia constant and the damping constant such that active power to be inputted and outputted decreases.
A power conversion device includes a power storage element, a power converter, and a control device. The control device includes: a power generator simulation unit to simulate characteristics of a synchronous power generator based on an active power command value and active power, to generate an angular frequency deviation; a constant setting unit to set at least one of an inertia constant and a damping constant of the synchronous power generator; a phase generation unit to generate a reference phase, based on the angular frequency deviation and a reference angular frequency; and a signal generation unit to generate a control signal, based on the reference phase and a reference voltage command value. When the AC voltage of the power system fluctuates, the constant setting unit sets at least one of the inertia constant and the damping constant such that active power to be inputted and outputted decreases.
Buchanan
H02M 7/5387 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs, p. ex. onduleurs à impulsions à un seul commutateur dans une configuration en pont
H02M 7/5395 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs, p. ex. onduleurs à impulsions à un seul commutateur avec commande automatique de la forme d'onde ou de la fréquence de sortie par modulation de largeur d'impulsions
66.
OBJECT RECOGNITION DEVICE AND OBJECT RECOGNITION METHOD
An object recognition device includes a time measurement unit to measure a time, a data receiving unit to receive detection data from a plurality of sensors and associate the time with the detection data, a received data processing unit to calculate a detection data density, a prediction processing unit to predict a state value of the object corresponding to the associated time from a state value of the object at an immediately preceding associated time and generate a prediction result as prediction data, an adjusted determination region parameter generation unit to generate an adjusted determination region parameter by adjusting a parameter indicating a size of a determination region, a correlation processing unit to generate correlation data between the prediction data and the detection data, and an update processing unit to update the state value of the object on the basis of the correlation data.
A carbon dioxide recovery method includes an adsorbing step of adsorbing carbon dioxide onto an adsorbent at a first location by using an air flow generated by a blower provided in a fluid device or an external air; a first transporting step of transporting the adsorbent which has adsorbed the carbon dioxide from the first location to a second location by a mobile object; and a second transporting step of transporting an adsorbent which has not adsorbed the carbon dioxide from the second location to the first location by a mobile object.
B01D 53/06 - Séparation de gaz ou de vapeursRécupération de vapeurs de solvants volatils dans les gazÉpuration chimique ou biologique des gaz résiduaires, p. ex. gaz d'échappement des moteurs à combustion, fumées, vapeurs, gaz de combustion ou aérosols par adsorption, p. ex. chromatographie préparatoire en phase gazeuse avec adsorbants mobiles
68.
IMAGE DISPLAY SYSTEM, IMAGE CONTROL METHOD, AND IMAGE CONTROL PROGRAM
An image display system includes a floating image display unit that displays a floating image as a real image in a predetermined displayable region in a three-dimensional space, a sensor unit that detects a user in the vicinity of the displayable region and outputs detection information, and a control unit that identifies a gesture, including at least one of body part movement and posture of the user, based on the detection information, and when the gesture is a predetermined position designation gesture designating a display position of the floating image in the displayable region, controls the floating image display unit so that the floating image is displayed at a designated display position as the display position designated by the position designation gesture.
G02B 30/56 - Systèmes ou appareils optiques pour produire des effets tridimensionnels [3D], p. ex. des effets stéréoscopiques l’image étant construite à partir d'éléments d'image répartis sur un volume 3D, p. ex. des voxels en projetant une image aérienne ou flottante
An upper electrode is separated from a lower electrode inside a trench by an intermediate insulating film. A first resistor is connected between the upper electrode and the gate electrode. A second resistor is connected between the lower electrode and the gate electrode. Gate-emitter capacitance of the lower electrode is smaller than gate-emitter capacitance of the upper electrode.
A method of manufacturing the semiconductor device includes: the application step of applying the hot melt adhesive having the film thickness L1 to the upper surface of the peripheral edge portion of the insulating substrate, and then applying the thermosetting adhesive having the film thickness L2 to the periphery of the region to which the hot melt adhesive is applied on the upper surface of the peripheral edge portion of the insulating substrate; the temporary fixing step of temporarily fixing the insulating substrate and the case by fastening the case and the case fitting jig with screws; and the heating step of heating the temporarily fixed insulating substrate and the case to fix the insulating substrate and the case. L1>L2 in the temporary fixing step, and L1=L2 in the heating step.
Provided is a semiconductor device that can suppress deterioration of assemblability and can achieve downsizing. The semiconductor device includes a base member, a first semiconductor element, and a second semiconductor element. The second semiconductor element has a planar size smaller than that of the first semiconductor element. The first semiconductor element and the second semiconductor element are arranged in a first direction. In the base member, a first groove is formed to surround the first semiconductor element, a second groove is formed to surround the second semiconductor element. The first groove and the second groove overlap each other in a region between the first semiconductor element and the second semiconductor element. In a second direction, a distance between portions of the second groove disposed to sandwich the second semiconductor element is smaller than a distance between portions of the first groove disposed to sandwich the first semiconductor element.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
H10D 80/20 - Ensembles de plusieurs dispositifs comprenant au moins un dispositif couvert par la présente sous-classe l’au moins un dispositif étant couvert par les groupes , p. ex des ensembles comprenant des condensateurs, des transistors FET de puissance ou des diodes Schottky
72.
VENTILATION DEVICE AND CONTROL METHOD FOR VENTILATION DEVICE
This ventilation device comprises: a supply air duct (31) having a plurality of individually openable and closable branch ducts (31-1, 31-2); an air supply blower (22) for supplying air to the supply air duct (31); a supply air pressure sensor (25) for detecting static pressure in the supply air duct (31); and a control device (24) for controlling the air volume of the air supply blower (22) so that the detected value of the air supply pressure sensor (25) becomes a target value. The control device (24): calculates an air volume change amount through multiplication of the difference between the target value and the detected value by a control gain; periodically changes an air volume command value for the air supply blower (22) by using the calculated air volume change amount; and updates the control gain by using the air volume change amount of the air supply blower (22) and the amount of change in the detected value obtained as a result of a change in air volume according to the air volume change amount of the air supply blower (22), and uses the updated control gain to calculate the air volume change amount of the air supply blower (22) for the next cycle.
This air conditioning management system comprises a first controller (20) and a second controller (220) that is subordinate to the first controller (20). The second controller (220) operates a second notification device (226) in response to receiving, from a sensor (31) for detecting leakage of refrigerant from an air conditioner (200), first information indicating leakage of the refrigerant. The first controller (20) is configured to operate a first notification device (26) in response to receiving the first information from the second controller (220). The first controller (20) is configured to be capable of stopping the operation of the first notification device (26) during operation and the second notification device (226) during operation in accordance with an input from a user. The second controller (220) is configured to be capable of stopping the operation of the second notification device (226) during operation in accordance with the input from the user, but is configured to be incapable of stopping the first notification device (26) during operation.
F24F 11/36 - Aménagements de commande ou de sécurité en relation avec le fonctionnement du système, p. ex. pour la sécurité ou la surveillance réagissant aux dysfonctionnements ou aux situations critiques aux fuites de fluides échangeurs de chaleur
This patrol monitoring system comprises: a moving body that patrols a plurality of patrol points; and a control server that notifies the moving body of the plurality of patrol points and a patrol route indicating the order of patrolling the patrol points and instructs the moving body to patrol the patrol route. Upon instructing a first moving body among a plurality of moving bodies to take a new action in which the first moving body does not pass through at least one of the patrol points included in the previously notified patrol route, the control server generates a new patrol route for another moving body different from the first moving body to patrol the at least one patrol point that is included in the previously notified patrol route of the first moving body and that the first moving body does not pass through due to the notification of the new action, and instructs the other moving body to patrol the generated new patrol route.
This design device is used for a heat exchanger and estimates a shape parameter for a heat transfer pipe having a groove in the inner surface thereof, the design device comprising: an estimation unit that estimates the shape parameter of the heat transfer pipe by using a trained design model, the model being such that a condition of use of the heat transfer pipe and a refrigerant type condition pertaining to a refrigerant flowing through the heat transfer pipe serve as input data, and the shape parameter of the heat transfer pipe constitutes output data; and an output unit that outputs the shape parameter of the heat transfer pipe estimated by the estimation unit.
G06F 30/27 - Optimisation, vérification ou simulation de l’objet conçu utilisant l’apprentissage automatique, p. ex. l’intelligence artificielle, les réseaux neuronaux, les machines à support de vecteur [MSV] ou l’apprentissage d’un modèle
F28F 1/40 - Éléments tubulaires ou leurs ensembles avec moyens pour augmenter la surface de transfert de chaleur, p. ex. avec des ailettes, avec des saillies, avec des évidements les moyens étant uniquement à l'intérieur de l'élément tubulaire
F28F 99/00 - Matière non prévue dans les autres groupes de la présente sous-classe
76.
STERILIZATION/VIRAL-INACTIVATION DEVICE, AIR CONDITIONER EQUIPPED WITH SAME, AND STERILIZATION/VIRAL-INACTIVATION METHOD
This sterilization/viral inactivation device comprises a microorganism adhesion part identification unit that identifies a microorganism adhesion part which is a part to which a microorganism adheres in an object space where a person enters and exits, a substance generation unit that generates a specific substance for performing sterilization treatment or inactivation treatment of the microorganism, and a transportation unit that generates an air flow in the object space and transports the specific substance toward the object microorganism, and the sterilization/viral inactivation device performs a sterilization treatment or inactivation treatment in the object space.
F24F 8/20 - Traitement, p. ex. purification, de l'air fourni aux locaux de résidence ou de travail des êtres humains autrement que par chauffage, refroidissement, humidification ou séchage par stérilisation
F24F 11/79 - Systèmes de commande caractérisés par leurs grandeurs de sortieDétails de construction de tels systèmes pour la commande de l’apport en air traité, p. ex. commande de la pression pour la commande de la direction de l’air fourni
This sterilization/virus inactivation device performs sterilization or virus inactivation processing in a target space in which a person can be present. The sterilization/virus inactivation device comprises: a presence/absence information acquisition unit that acquires information related to presence/absence indicating whether the person is present or absent in the target space; a processing condition calculation unit that calculates an absence processing condition of the processing according to the information related to the absence acquired by the presence/absence information acquisition unit; and a processing execution unit that executes and ends the processing while the person is absent on the basis of the absence processing condition calculated by the processing condition calculation unit.
F24F 8/20 - Traitement, p. ex. purification, de l'air fourni aux locaux de résidence ou de travail des êtres humains autrement que par chauffage, refroidissement, humidification ou séchage par stérilisation
F24F 11/65 - Traitement électronique pour la sélection d'un mode de fonctionnement
78.
PREFORM FOR FIBER-REINFORCED PLASTIC MOLDED BODY, FIBER-REINFORCED PLASTIC MOLDED BODY, AND METHOD FOR PRODUCING PREFORM FOR FIBER-REINFORCED PLASTIC MOLDED BODY
A preform (1) for a fiber-reinforced plastic molded body has: a substrate (11); a continuous fiber bundle (12) disposed on the substrate; an optical fiber (13) disposed along the stretching direction of the continuous fiber bundle (12) in at least a portion of the continuous fiber bundle (12); and a fixing thread (14) sewn to the substrate (11) to fix the continuous fiber bundle (12) and the optical fiber (13).
B29C 70/68 - Façonnage de matières composites, c.-à-d. de matières plastiques comprenant des renforcements, des matières de remplissage ou des parties préformées, p. ex. des inserts en incorporant ou en surmoulant des parties préformées, p. ex. des inserts ou des couches
A high-frequency amplifier (1) is provided with: an input matching circuit (1a); an output matching circuit (1b); FET cells (1c-1 to 1c-4) which are connected to the input matching circuit (1a) and to the output matching circuit (1b), and which are arranged side by side at the boundary between the input side and the output side; and a metal wall (1e) which has a ground potential and is provided between the input matching circuit (1a) and the output matching circuit (1b).
H03F 3/195 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H01P 3/00 - Guides d'ondesLignes de transmission du type guide d'ondes
An electromagnetic wave attenuation structure (10) comprises: a dielectric substrate (11) provided on a lateral wall surface (52) of a gap (50) through which electromagnetic waves propagate; and a plurality of SIW resonators (20) provided on the dielectric substrate (11) and arranged in a direction, which is orthogonal to the propagation direction W of the electromagnetic waves, in accordance with the direction of an electric field in electric field distribution of the electromagnetic waves.
1212121212122) that has a carrier input terminal electrically connected to the carrier output pad, a peak input terminal electrically connected to the peak output pad, and a cell output terminal, combines a carrier amplified output signal outputted to the carrier output pad and a peak amplified output signal outputted to the peak output pad, and outputs a cell output signal to the cell output terminal.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/68 - Combinaisons d'amplificateurs, p. ex. amplificateurs à plusieurs voies pour stéréophonie
82.
MODEL VERIFICATION DEVICE, MODEL VERIFICATION METHOD, MODEL VERIFICATION PROGRAM, INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND INFORMATION PROCESSING PROGRAM
A model verification device (3) is configured so as to comprise: an inference model reading unit (11) that reads an inference model (1) to be verified; a verification information acquisition unit (12) that acquires, as information generated on the basis of input data, verification information to be used to determine the authenticity of the input/output of the inference model; and a verification unit (13) that determines the authenticity of the input/output of the inference model on the basis of the verification information acquired by the verification information acquisition unit.
A control device (1) of a machine tool (2) comprises: an index value calculation unit (14) that calculates a contact index value indicating a temporal ratio of contact with a workpiece by a cutting edge of a tool (T) during a tool 1 rotation period, for each of a plurality of sets of processing conditions which include an eccentricity control frequency and the relative position of the rotational center of the tool (T) with respect to the geometric center of the tool (T); a processing condition-setting unit (17) that selects one set of processing conditions on the basis of the calculated contact index values; an eccentricity control unit (19) that calculates an eccentricity control signal for rotating the geometric center of the tool (T) around a target rotational center on the basis of a target rotational center that is a rotational center included in the selected set of processing conditions and a target eccentricity control frequency that is an eccentricity control frequency included in said set of processing conditions; and a feed shaft control unit (11) that controls the drive of the feed shaft of the tool (T) or the workpiece (W) on the basis of the eccentricity control signal.
G05B 19/4093 - Commande numérique [CN], c.-à-d. machines fonctionnant automatiquement, en particulier machines-outils, p. ex. dans un milieu de fabrication industriel, afin d'effectuer un positionnement, un mouvement ou des actions coordonnées au moyen de données d'un programme sous forme numérique caractérisée par la programmation de pièce, p. ex. introduction d'une information géométrique dérivée d'un dessin technique, combinaison de cette information avec l'information d'usinage et de matériau pour obtenir une information de commande, appelée programme de pièce, pour la machine à commande numérique [CN]
B23C 3/00 - Fraisage de pièces particulièresOpérations de fraisage spécialesMachines à cet effet
B23C 9/00 - Parties constitutives ou accessoires dans la mesure où ils sont spécialement adaptés aux machines ou aux outils de fraisage
B23Q 15/22 - Commande ou régulation de la position de l'outil ou de la pièce
This DC power distribution system supplies power from power supplies (20, 21) through a DC bus (2) to a plurality of devices (23, 24, 25, 26) in a logistics warehouse, and comprises: first power converters (10, 11) that supply power unidirectionally from the power supplies (20, 21) toward the DC bus (2); second power converters (13, 14, 15) that supply power bidirectionally between the DC bus (2) and built-in storage battery loads (23, 24, 25); a third power converter (16) that supplies power bidirectionally between the DC bus (2) and a motor load (26); and a control device (1) that instructs the first power converters (10, 11) and the second power converters (13, 14, 15) to transmit a target voltage value on the DC bus side and operation parameters being the power conversion directions.
H02J 1/00 - Circuits pour réseaux principaux ou de distribution, à courant continu
H02J 7/35 - Fonctionnement en parallèle, dans des réseaux, de batteries avec d'autres sources à courant continu, p. ex. batterie tampon avec des cellules sensibles à la lumière
This reflecting mirror (10) is provided with: a thermoplastic member (110A) which is formed to have a spiral shape; a central structural member (150) which is disposed in the central part of the spiral of the thermoplastic member (110A), and to which the thermoplastic member (110A) is firmly affixed; and conductive patches (100A) which are each disposed in the gap between the spiral of the thermoplastic member (110A) and in the gap between the central structural member (150) and the thermoplastic member (110A), and which are each firmly affixed to the thermoplastic member (110A), or to the central structural member (150) and the thermoplastic member (110A).
H01Q 19/12 - Combinaisons d'éléments actifs primaires d'antennes avec des dispositifs secondaires, p. ex. avec des dispositifs quasi optiques, pour donner à une antenne une caractéristique directionnelle désirée utilisant des surfaces réfléchissantes où les surfaces sont concaves
B64G 1/10 - Satellites artificielsSystèmes de tels satellitesVéhicules interplanétaires
B64G 1/66 - Aménagements ou adaptations d'appareils ou d'instruments, non prévus ailleurs
H01P 11/00 - Appareils ou procédés spécialement adaptés à la fabrication de guides d'ondes, résonateurs, lignes ou autres dispositifs du type guide d'ondes
H01Q 1/28 - Adaptation pour l'utilisation dans ou sur les avions, les missiles, les satellites ou les ballons
86.
SYSTEM AND METHOD FOR ROBOT PLANNING USING LARGE LANGUAGE MODELS
A robotic controller for controlling a robot according to a sequence of robotic actions, comprises an input interface configured to receive a plurality of multimodal inputs each specifying instructions for performing a task in a different modality including audio, video, and a text modality. The controller also comprises a multimodal large language model, an action sequence decoder, and a controller. The multimodal LLM includes a multimodal LLM encoder and an LLM decoder. The multimodal LLM encoder is trained with machine learning to transform the multimodal instructions into encodings and the LLM decoder is configured to decode the encodings into a sequence of robotic instructions. The action sequence decoder is trained with machine learning to transform the sequence of robotic instructions into a sequence of actions using a library of robotic skills. The controller is configured to control a robot according to the sequence of actions.
G06N 3/008 - Vie artificielle, c.-à-d. agencements informatiques simulant la vie fondés sur des entités physiques commandées par une intelligence simulée de manière à reproduire des formes de vie intelligentes, p. ex. fondés sur des robots reproduisant les animaux ou les humains dans leur apparence ou leur comportement
Heat pumps; Heat pump water heaters; Air-source heat pump water heaters; Hot water heaters; Electric water heating apparatus; Hot water boilers; Air-conditioning apparatus; Heat exchangers, other than parts of machines
88.
SEMICONDUCTOR DEVICE AND ELECTRIC POWER CONVERSION DEVICE
An upper electrode is separated from a lower electrode inside a trench by an intermediate insulating film. A first resistor is connected between the upper electrode and the input terminal. A second resistor is connected between the lower electrode and the input terminal. Gate-emitter capacitance of the lower electrode is smaller than gate-emitter capacitance of the upper electrode.
H01L 23/552 - Protection contre les radiations, p. ex. la lumière
H02M 1/44 - Circuits ou dispositions pour corriger les interférences électromagnétiques dans les convertisseurs ou les onduleurs
H03K 17/04 - Modifications pour accélérer la commutation
H03K 17/16 - Modifications pour éliminer les tensions ou courants parasites
H10D 12/00 - Dispositifs bipolaires contrôlés par effet de champ, p. ex. transistors bipolaires à grille isolée [IGBT]
H10D 62/10 - Formes, dimensions relatives ou dispositions des régions des corps semi-conducteursFormes des corps semi-conducteurs
H10D 62/60 - Distribution ou concentrations d’impuretés
H10D 64/27 - Électrodes ne transportant pas le courant à redresser, à amplifier, à faire osciller ou à commuter, p. ex. grilles
H10D 84/00 - Dispositifs intégrés formés dans ou sur des substrats semi-conducteurs qui comprennent uniquement des couches semi-conductrices, p. ex. sur des plaquettes de Si ou sur des plaquettes de GaAs-sur-Si
H10D 84/80 - Dispositifs intégrés formés dans ou sur des substrats semi-conducteurs qui comprennent uniquement des couches semi-conductrices, p. ex. sur des plaquettes de Si ou sur des plaquettes de GaAs-sur-Si caractérisés par l'intégration d'au moins un composant couvert par les groupes ou , p. ex. l'intégration de transistors IGFET
89.
TARGET-TRACKING APPARATUS AND TARGET-TRACKING METHOD
A target-tracking apparatus including: a detection unit that detects feature amounts from sensor data, the feature amounts including a position of at least one target; a tracking unit that tracks the target on a basis of the detected feature amounts and outputs a track of the target being tracked; and a track classification unit that determines to which of a plurality of predetermined movement patterns the output track corresponds.
G06T 7/246 - Analyse du mouvement utilisant des procédés basés sur les caractéristiques, p. ex. le suivi des coins ou des segments
G06T 7/73 - Détermination de la position ou de l'orientation des objets ou des caméras utilisant des procédés basés sur les caractéristiques
G06V 10/44 - Extraction de caractéristiques locales par analyse des parties du motif, p. ex. par détection d’arêtes, de contours, de boucles, d’angles, de barres ou d’intersectionsAnalyse de connectivité, p. ex. de composantes connectées
G06V 10/764 - Dispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant la classification, p. ex. des objets vidéo
G06V 20/52 - Activités de surveillance ou de suivi, p. ex. pour la reconnaissance d’objets suspects
90.
MIGRATION DESTINATION CONTROL APPARATUS, CONTROL MIGRATION METHOD, AND COMPUTER READABLE MEDIUM
A migration destination control apparatus (20) is to where control of a control target (40) is migrated from a migration source control apparatus (10) that controls the control target (40) by cyclically executing a computation process. In the migration destination control apparatus (20), an initial synchronization unit (242) obtains information that relates to the computation process of the migration source control apparatus (10) in a specified cycle as initial synchronization information. A computation reproduction unit (212), based on the initial synchronization information, executes a computation process that is executed in the migration source control apparatus (10) from a next computation cycle after the specified cycle to a migration cycle to where the control is migrated. A computation execution unit (211) controls the control target (40) by executing the computation process after the migration cycle using a result of the computation process that is executed by the computation reproduction unit (212).
A conductive housing includes: a first blocking unit that is formed with a first conductive material in a box-like shape having an opening portion; and a second blocking unit including a first electromagnetic wave blocking portion that is formed with a second conductive material and extends in a first direction and a second direction orthogonal to the first direction, and a second electromagnetic wave blocking portion that is formed with a third conductive material, extends in the first direction and the second direction, and is disposed to face the first electromagnetic wave blocking portion at a distance. The second blocking unit is disposed in the opening portion, the first blocking unit is electrically connected to the first electromagnetic wave blocking portion and the second electromagnetic wave blocking portion, and the first blocking unit and the second blocking unit form a space inside.
In a power semiconductor device, the present disclosure is intended to control tradeoff characteristics while realizing operation in a high-speed side range of the tradeoff characteristics without depending on a carrier lifetime control technique. An n+ cathode layer includes a first n+ cathode layer contacting a second metal layer, and a second n+ cathode layer provided between the first n+ cathode layer and an n buffer layer while contacting the first n+ cathode layer and the n buffer layer. Crystal defect density in the first n+ cathode layer is higher than crystal defect density in the second n+ cathode layer. The n+ cathode layer is absent in an intermediate region and a terminal region.
H10D 62/10 - Formes, dimensions relatives ou dispositions des régions des corps semi-conducteursFormes des corps semi-conducteurs
H10D 62/13 - Régions semi-conductrices connectées à des électrodes transportant le courant à redresser, amplifier ou commuter, p. ex. régions de source ou de drain
H10D 62/60 - Distribution ou concentrations d’impuretés
93.
INFORMATION PROCESSING DEVICE, AND GENERATION METHOD
An information processing device includes an acquisition unit that acquires multiple pieces of learning data in each of which a document and a category have been associated with each other, a morphological analysis performance unit that performs morphological analysis on each of the multiple pieces of learning data, an extraction unit that extracts words being predicates from among a plurality of words obtained by the morphological analysis, and a calculation generation unit that generates a learned model by calculating pointwise mutual information based on the plurality of words obtained by the morphological analysis, a plurality of extracted words, and a plurality of categories, the learned model being a learned model which outputs a category corresponding to data when the data is inputted.
A semiconductor optical integrated device of the present disclosure includes: an InxGa1-xAsyP1-y (0≤x≤1, 0≤y≤1) layer formed on a top surface of a semiconductor stacking and having a high-mesa ridge structure; a first nitride film formed on the InxGa1-xAsyP1-y (0≤x≤1, 0≤y≤1) layer by a CVD method or an ALD method; an intermediate insulating film formed on the first nitride film and having a thickness of 5000 angstroms or more, the intermediate insulating film being composed of a polymer compound layer or an insulating film formed by the CVD method; and a second nitride film formed on the intermediate insulating film by the ALD method and having a thickness of 1000 angstroms or more.
A first terminal is provided on a first surface of the first semiconductor package and electrically connected to a first pole side of the first semiconductor chip. A first output terminal is provided on a second surface of the first semiconductor package and electrically connected to a second pole side of the first semiconductor chip. A second output terminal is provided on a third surface of the second semiconductor package and electrically connected to the first pole side of the second semiconductor chip. A second terminal is provided on the third surface of the second semiconductor package and electrically connected to the second pole side of the second semiconductor chip. The first output terminal is connected to the second output terminal. A bus bar is connected to the second terminal and extends from the second terminal in a direction of the first surface on which the first terminal is provided.
H10D 80/20 - Ensembles de plusieurs dispositifs comprenant au moins un dispositif couvert par la présente sous-classe l’au moins un dispositif étant couvert par les groupes , p. ex des ensembles comprenant des condensateurs, des transistors FET de puissance ou des diodes Schottky
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
H01L 23/50 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes pour des dispositifs à circuit intégré
H01L 25/11 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs ayant des conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
96.
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
The present disclosure relates to a semiconductor device, and the semiconductor device includes: a semiconductor substrate; a channel layer provided over the semiconductor substrate and formed of a first nitride semiconductor; a barrier layer provided over the channel layer and formed of a second nitride semiconductor having a larger band gap than the first nitride semiconductor; a metal film selectively formed above the barrier layer; a composite layer provided to be in contact with the metal film and having at least a conductive material and an insulating material; and an insulating film formed over the barrier layer in a region where the metal film and the composite layer are not formed.
H10D 30/47 - Transistors FET ayant des canaux à gaz de porteurs de charge de dimension nulle [0D], à une dimension [1D] ou à deux dimensions [2D] ayant des canaux à gaz de porteurs de charge à deux dimensions, p. ex. transistors FET à nanoruban ou transistors à haute mobilité électronique [HEMT]
An energy storage system includes a pair of input and output terminals connected to an electric power converter, and a plurality of power storage units connected in parallel between one of the pair of input and output terminals and the other one of the pair of input and output terminals. The power storage units each include a power storage element group consisting of a plurality of power storage elements. Among the plurality of power storage units, when one power storage unit is replaced with a new power storage unit, the one power storage unit is replaced with the new power storage unit so that a difference in current flowing through the new power storage unit and remaining power storage units, excluding the one power storage unit, is reduced.
A storage stores a routing table with which a record is registered. The record includes a destination network ID, a subnet mask, and a gateway IP address. A table manager registers a first record with the routing table and updates the routing table to indicate, as a default route, a second path through a second communication network. The first record includes, as the destination network ID, an IP address of a first communication device connected to a communication device through a first communication network, includes a full-bit subnet mask as the subnet mask, and includes, as the gateway IP address, an IP address of a first gateway connected to the first communication network or identification information of a first communication adapter. This structure can appropriately determine a communication path with a simple structure without user effort.
A semiconductor apparatus includes: a semiconductor device; a control terminal; first and second main terminals respectively connected to first and second main electrodes of the semiconductor device; a sealing material; a capacitor module; a first busbar connected to a first electrode of the capacitor module, and connected to the first main terminal outside the sealing material; a second busbar connected to a second electrode, and connected to the second main terminal outside the sealing material; a control substrate disposed on an upper surface of the sealing material; and a shield plate disposed between the sealing material and the control substrate. The shield plate is extended to cover exposed portions of the first and second busbars not covered with a housing of the capacitor module, or is bent to cover a side surface of the control substrate near the exposed portions.
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
A semiconductor device includes a transistor formed on a semiconductor substrate including an active region where the transistor is formed and a termination region surrounding the active region. The termination region includes a first interlayer insulating film on the semiconductor substrate, a second interlayer insulating film thereon, a wiring electrode electrically connected to a gate electrode of the transistor, a terminal electrode provided closer to the edge portion of the semiconductor substrate than the wiring electrode is, and a field plate electrode provided between the wiring electrode and the terminal electrode in plan view. The wiring electrode, the field plate electrode, and the terminal electrode are provided on the first interlayer insulating film. The field plate electrode is covered with the second interlayer insulating film. The field plate electrode has a smaller height than the wiring electrode and the terminal electrode.
