An integrated optical coupling switch, including two parallel optical waveguides, two electrostatically attracted electrodes and an insulating layer. The electrodes includes a lower electrode that is arranged on a silicon surface and avoids the optical waveguides, and an upper electrode that is arranged above the optical waveguides and formed as a micro-electromechanical architecture, and the upper electrode is attracted to come into contact with a surface of the optical waveguide when reaching a preset voltage value; the insulating layer is arranged on a surface of the lower electrode and used for preventing the upper electrode from contacting the lower electrode to form short circuit between the upper electrode and the lower electrode when the upper electrode is attracted to come into contact with the surface of the optical waveguide.
G02F 1/225 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur par interférence dans une structure de guide d'ondes optique
G02F 1/21 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur par interférence
An integrated optical coupling switch, comprising two parallel optical waveguides (10), two electrostatically attracted electrodes (20), and an insulation layer (30), wherein each electrode (20) comprises a lower electrode (21) that is arranged on a silicon surface and avoids the optical waveguides (10), and an upper electrode (22) that is arranged above the optical waveguides (10) and is formed in a micro-electro-mechanical architecture; when reaching a preset voltage value, the upper electrode (22) is attracted to and comes into contact with a surface of an optical waveguide (10); and the insulation layer (30) is arranged on a surface of the lower electrode (21) and is used for generating a short circuit when the upper electrode (22) is attracted to and comes into contact with the surface of the optical waveguide (10) but is not in direct contact with the lower electrode (21). In this way, the problem of a short circuit caused by the contact between the lower electrode (21) and the upper electrode (22) is solved, such that the performance stability of the integrated optical coupling switch during operation is ensured, and the yield of the integrated optical coupling switch is improved.
G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
G02F 1/225 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur par interférence dans une structure de guide d'ondes optique
A laser packaging device (1), comprising a base (10), a laser light source component (30), a lead wire (50), and a light window (60). The base (10) comprises a light source mounting portion (11) and a support portion (13); the light source mounting portion (11) and the support portion (13) are integrally arranged, and the light source mounting portion cooperates with the support portion (13) to form an accommodating cavity (15); the support portion (13) comprises a top surface (132) and a bottom surface (134); the laser light source component (30) is accommodated in the accommodating cavity (15) and is provided at the light source mounting portion (11); the laser light source component (30) is configured to emit laser; the lead wire (50) passes through the support portion (13); the lead wire (50) comprises a first end (52) and a second end (54) opposite to each other; the first end (52) is provided in the accommodating cavity (15) and is configured to be electrically connected with the laser light source component (30); the second end (54) is provided on the bottom surface (134); the light window (60) covers the top surface (132) to seal the accommodating cavity (15); and the laser is emitted through the light window (60). The light source mounting portion (11) and the support portion (13) are integrally arranged, thereby simplifying the manufacturing process of the base (10). In addition, the first end (52) of the lead wire (50) is provided in the accommodating cavity (15), and the second end (54) is provided on the bottom surface (134) of the support portion (13), thereby facilitating a decrease in the size of the base (10) and achievement of miniaturization of the laser packing device (1).
A micro-electronic non-landing mirror system includes a substrate, at least two supporting assemblies, at least two driving electrodes, a rotating mirror, and a driving circuit. The rotating mirror is elastically supported on the supporting assemblies through elastic reset assemblies. When the driving circuit applies a driving voltage, the rotating mirror moves closer to the driving electrode to which the driving voltage is applied within a range of movement that does not land on the substrate. When the driving circuit removes the driving voltage, the rotating mirror gets back to move away from the driving electrode under elastic restoring force of the elastic reset assemblies. Each elastic reset assembly includes at least two elastic reset units connected to different corners of the rotating mirror by a corresponding one supporting assembly. Each elastic reset unit is configured for providing the rotating mirror with at least two rotational degrees of freedom.
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
G02B 7/182 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour prismesMontures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs
B81B 3/00 - Dispositifs comportant des éléments flexibles ou déformables, p. ex. comportant des membranes ou des lamelles élastiques
5.
Flashlight having plural light sources with common fluorescent element
A flashlight including a lens assembly having an adjusting element; and a light source assembly provided at one side of the lens assembly. The light source assembly includes a first light source, a second light source, an excitation element, and a light path adjusting element. Light emitted from the first light source irradiates the excitation element to generate first exciting light, and light emitted from the second light source irradiates the excitation element to generate second exciting light. The first exciting light and the second exciting light sequentially pass through the light path adjusting element and the adjusting element, and are outputted simultaneously.
F21L 4/02 - Dispositifs d'éclairage électriques avec des accumulateurs ou des piles électriques incorporés caractérisés par la présence de plusieurs sources lumineuses
F21V 9/35 - Éléments contenant un matériau photoluminescent distinct de la source de lumière ou espacé de cette source caractérisés par la disposition du matériau photoluminescent aux points focaux, p. ex. des réfracteurs, lentilles, réflecteurs ou réseaux de sources de lumière
F21V 13/04 - Combinaisons de deux sortes d'éléments uniquement les éléments étant des réflecteurs et des réfracteurs
F21V 14/06 - Commande de la distribution de la lumière émise par réglage d’éléments constitutifs par un mouvement de réfracteurs
F21V 29/503 - Dispositions de refroidissement caractérisées par l’adaptation au refroidissement de composants spécifiques de sources lumineuses
A light source device (1), comprising a housing (10), a laser light source assembly (20), a light guiding assembly (30), and a wavelength conversion element (40). The housing (10) is provided with an accommodating cavity (11), the housing (10) comprises a step mounting portion (16), the step mounting portion (16) is located in the accommodating cavity (11) and comprises a plurality of steps (161), and each step (161) comprises a step mounting surface (1612). The laser light source assembly (20) is mounted on a plurality of step mounting surfaces (1612). The light guiding assembly (30) is mounted on the step mounting portion (16) and guides the laser light emitted by the laser light source assembly (20) to be emitted in a predetermined direction. The wavelength conversion element (40) receives the laser light guided and emitted by the light guide assembly (30) and converts part of the incident laser light into excited light, and the excited light is combined with the unconverted laser light to form white light, and then the white light is emitted from the wavelength conversion element (40). The laser light source assembly (20) and the wavelength conversion element (40) are encapsulated into one piece, reducing the volume of the light source device (1), and improving the integration of the light source device (1).
A light source device. The light source device comprises: a tube housing (11), a transparent cover plate (12) covering the tube housing (11), a wavelength conversion device (4), a light source module (2) and an annular reflection member (3), wherein a sealed space is defined by the tube housing (11) and the transparent cover plate (12); the wavelength conversion device (4) is arranged on the transparent cover plate (12); the light source module (2) is located in the sealed space and used for emitting light beams; and the annular reflection member (3) is located in the sealed space, comprises an annular reflection surface (31) and is used for reflecting the light beams to the wavelength conversion device (4). The light beams emitted by the light source module (2) are reflected to the wavelength conversion device (4) by means of the annular reflection member (3), circular light spots in Gaussian distribution can be formed, and the light source device has a simple structure and is small in size.
Provided are a light source apparatus and a projection device. The light source apparatus comprises a base, a tube shell, a laser assembly and a wavelength conversion assembly, wherein the tube shell is snap-fitted to the base and encloses to form an accommodation cavity, and the tube shell is provided with a light output hole; the laser assembly is arranged in the accommodation cavity and comprises a laser chip for emitting a laser; the wavelength conversion assembly is connected to the tube shell and corresponds to the light output hole; the wavelength conversion assembly is arranged on a light path of emitted light of the laser chip and is used for converting part of an incident laser into fluorescent light; an incident face of the wavelength conversion assembly is provided with an anti-reflection film; and the laser emitted by the laser chip is incident to the wavelength conversion assembly through the anti-reflection film, the fluorescent light converted by the wavelength conversion assembly and the laser that has not been converted are combined to form white light, and same is emitted from an emergent face of the wavelength conversion assembly. A laser assembly is arranged in an accommodation cavity, and an anti-reflection film is arranged on an incident face of a wavelength conversion assembly, such that the light source apparatus can improve the light utilization rate on the premise of emitting white light that meets a requirement.
Disclosed in the present application are a method for increasing the precision of a flat edge of a semiconductor wafer, and a laser chip. The method comprises: cleaving an obtained epitaxial wafer to obtain at least one cleavage edge; measuring the angle between each cleavage edge and a corresponding lithographic line on the epitaxial wafer to obtain a deflection angle; repeating the described steps a plurality of times to obtain a plurality of deflection angles; and using the plurality of deflection angles to calculate a compensation angle and cleaving another epitaxial wafer according to the compensation angle so that a cleavage edge corresponding to the other epitaxial wafer is parallel to a flat edge and/or lithographic line corresponding to another epitaxial wafer. By means of the described method, the present application can improve the yield of a laser chip.
H01S 5/02 - Détails ou composants structurels non essentiels au fonctionnement laser
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
A test chip. The test chip (12) is embedded into a semiconductor wafer (11) body and is used for performing a photoluminescence test. The test chip (12) comprises a plurality of quantum well intermixing areas (122) and non-quantum well intermixing areas (121) which are periodically arranged or randomly arranged, wherein the particle doping of the quantum well intermixing areas (122) is the same as that of a quantum well doping layer included in the semiconductor wafer (11) body. Laser beams are received by means of a plurality of quantum well intermixing areas (122), so as to generate a photoluminescence reaction, and interference occurs between light emitted by means of the photoluminescence of the plurality of quantum well intermixing areas (122), such that the intensity of a wavelength spectrum line signal emitted by the test chip (12) is enhanced, and the wavelength blue-shift situation of the test chip (12) can be measured by using a conventional spectrometer (40), thereby rapidly determining an anti-COD characteristic of a semiconductor wafer (11).
Disclosed in the present utility model are an epitaxial structure and a semiconductor chip applying same. The epitaxial structure comprises a quantum well structure, a P-type contact layer, and an electrode layer, which are stacked in sequence; the P-type contact layer comprises a first step part and a second step part that are disposed in a step shape, the second step part being closer to the quantum well structure relative to the first step part; the first step part and the second step part are filled with a first insulation part. By means of the described method, the anti-catastrophic optical mirror damage value of a semiconductor chip can be effectively improved.
Disclosed in the present invention are a laser chip and a preparation method therefor. Said method comprises: providing a laser epitaxial structure, the laser epitaxial structure comprising an active layer, and a cladding layer and a contact layer which are sequentially stacked on the active layer; covering a first mask layer on the contact layer, and windowing the first mask layer to form a first window region; performing primary etching on the contact layer by means of the first window region, so as to form a second window region corresponding to the first window region and exposing the cladding layer; performing zinc diffusion on the cladding layer and the active layer by means of the first window region and the second window region; removing the first mask layer; covering a second mask layer on the contact layer, and windowing the second mask layer to form a third window region, the projection of the third window region on the contact layer being located at the periphery of the second window region; and performing secondary etching on the contact layer by means of the third window region, so as to enlarge the second window region to correspond to the third window region. The described method can effectively increase a catastrophic optical mirror damage threshold.
H01S 5/34 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
A micro-electronic non-landing mirror system (10), comprising a substrate (100), at least two supporting assemblies (200), at least two drive electrodes (300), a rotating mirror (400), and a drive circuit, wherein the supporting assemblies (200) and the drive electrodes (300) are all arranged on the substrate (100); the rotating mirror (400) is elastically supported on the supporting assemblies (200) by means of elastic reset assemblies (500); and when the drive circuit applies a drive voltage, the rotating mirror (400) approaches the drive electrode (300), to which the drive voltage is applied, within a movement range where the rotating mirror does not land on the substrate (100), and when the drive voltage is released, the rotating mirror (400) moves away from the drive electrode (300) under the elastic restoring force of the elastic reset assemblies (500). Each elastic reset assembly (500) comprises at least two elastic reset units (510, 520) connected to different corner positions on the rotating mirror (400) by the supporting assembly (200) corresponding thereto, which reset units are used for providing at least two rotational degrees of freedom of the rotating mirror (400). Adhesion generated after landing of the rotating mirror (400) can be avoided, and in addition, more flexible deflection is achieved with a more simplified structure.
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
A laser packaging structure (10), comprising a base (12), a tube shell (14), a light window (16) and a laser assembly (18). The tube shell (14) is provided on the base (12) and encloses an accommodating space (15). The tube shell (14) has a top wall (142) away from the base (12). The top wall (142) is provided with a first metal layer (1421). A part of the surface of the light window (16) facing the tube shell (14) is provided with a second metal layer (161). The first metal layer (1421) and the second metal layer (161) are welded by using solder, so that the light window (16) seals the accommodating space (15). The laser assembly (18) is accommodated in the accommodation space (15), and is used for emitting laser through the light window (16). The light window (16) and the tube shell (14) of the laser packaging structure (10) are welded by solder, and on the premise of ensuring welding quality, the cost of the laser packaging structure (10) is reduced.
A wafer polishing device (10). The wafer polishing device (10) comprises a supporting device (11) and a clamping device (12); the supporting device (11) comprises a supporting base (111) and a polishing pad (112) provided on the supporting base (111); the clamping device (12) comprises a counterweight block (122), a clamping base (121), and a cushion pad (123); the counterweight block (122) is provided on one surface of the clamping base (121), and the cushion pad (123) is provided on one side of the clamping base (121) distant from the counterweight block (122); the clamping device (12) is configured to enable a wafer to be contact with the polishing pad (112), the counterweight block (122) is configured to adjust the clamping force of the clamping device (12), and the cushion pad (123) is bonded to a non-polishing surface of the wafer. By means of the counterweight block (122), the polishing force can be controlled, the damage to the wafer is reduced, and the product quality is improved.
B24B 37/10 - Machines ou dispositifs de rodageAccessoires conçus pour travailler les surfaces planes caractérisés par le déplacement de la pièce ou de l'outil de rodage pour un rodage simple face
B24B 37/30 - Supports de pièce pour rodage simple face de surfaces planes
B24B 49/04 - Appareillage de mesure ou de calibrage pour la commande du mouvement d'avance de l'outil de meulage ou de la pièce à meulerAgencements de l'appareillage d'indication ou de mesure, p. ex. pour indiquer le début de l'opération de meulage comparant la cote instantanée de la pièce travaillée à la cote cherchée, la mesure ou le calibrage étant continus ou intermittents impliquant la mesure de la cote de la pièce sur le lieu du meulage pendant l'opération de meulage
A laser (10a, 10b), comprising a housing (100), a heat sink substrate (200), a transparent window (400), and a plurality of laser chips (300). The housing (100) comprises a bottom housing (110), a side housing (120), and a cover plate (130), the side housing (120) is disposed on the bottom housing (110), the cover plate (130) is opposite to the bottom housing (110) and closes the side housing (120), and the bottom housing (110), the side housing (120) and the cover plate (130) define an accommodating cavity (101). The heat sink substrate (200) is disposed on the bottom housing (110) and located in the accommodating cavity (101), the transparent window (400) is provided on the side housing (120) and is used for laser light transmission, the plurality of laser chips (300) is disposed on the heat sink substrate (200), the laser axes of the plurality of laser chips (300) are parallel to each other, and the laser axis of each laser chip (300) directly passes through the transparent window (400). By packaging the plurality of laser chips (300) in the housing (100), compared with a plurality of independent laser light sources, the overall volume of the laser (10a, 10b) can be reduced. Moreover, because the transparent window (400) is provided on the side housing (120), the laser (10a, 10b) can directly emit light from the side, without using a reflecting mirror for secondary reflection.
Disclosed is a beam lamp light source system (100), comprising a light source (10), a light-homogenizing rod (60) and a collimating lens group (80), wherein the light source (10) is used for emitting a light beam; the light-homogenizing rod (60) comprises a rod body (61) and a scatterer (62); the scatterer (62) is located in the rod body (61); the rod body (61) is used for receiving the light beam emitted by the light source (10) and enable the light beam to be emitted after being scattered by the scatterer (62); the collimating lens group (80) is located in an emergent light path of the rod body (61); and the collimating lens group (80) is configured to collimate the light beam emitted by the light-homogenizing rod (60). In the beam lamp light source system (100), by means of providing the scatterer (62) in the rod body (61), after the light beam is emitted from the beam lamp light source system (100), in a lattice arrangement of angular distribution of energy of a light spot, angles of adjacent lattices are fused together, and the angular distribution of energy of the light beam becomes continuous, such that the brightness of the light spot of the light beam emitted by the beam lamp light source system (100) can be more uniform at different positions, and the light beam is not prone to generating more tiny broken light beams visible to human eyes, thereby improving the light-emitting effect of the beam lamp light source system.
A flashlight (10), comprising: a lens assembly (100) having an adjusting lens (11); and a light source assembly (200) provided at one side of the lens assembly (100), wherein the light source assembly (200) comprises a first light source (21), a second light source (22), an excitation element (23), and a light path adjusting element (24). Light emitted from the first light source (21) irradiates the excitation element (23) to generate first exciting light, and light emitted from the second light source (22) irradiates the excitation element (23) to generate second exciting light. The first exciting light and the second exciting light sequentially pass through the light path adjusting element (24) and the adjusting lens (11) and then are emitted in parallel. The flashlight (10) can integrate the advantages of the first light source (21) and the second light source (22), to provide the light source with excellent light emitting performance.
Disclosed are fluorescent ceramic and a preparation method therefor, a light-emitting device, and a projection device, relating to the technical field of fluorescent ceramics. The fluorescent ceramic at least comprises: a matrix (101); and light-emitting centers (102), first scattering units (103) and second scattering units (104) which are distributed in the matrix (101), with the refractive index of the first scattering unit (103) being greater than that of the light-emitting center (102), and the refractive index of the second scattering unit (104) being less than that of the light-emitting center (102). In this way, the fluorescence scattering performance of the fluorescent ceramic can be improved, thereby increasing the lighting effect and utilization rate in a light source system.
C04B 35/10 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'oxyde d'aluminium
H01S 5/30 - Structure ou forme de la région activeMatériaux pour la région active
A laser and a laser chip manufacturing method. The laser chip manufacturing method comprises: providing a laser bar (10) comprising a first cavity surface (11) and a second cavity surface (12) that face away from each other; and performing, by means of laser (30) radiation, an annealing treatment on a quantum well region (13) of the first cavity surface (11) and a quantum well region (13) of the second cavity surface (12), wherein a duration of the laser (30) radiation is 10 to 600 seconds. The laser chip manufacturing method performs an annealing treatment on cavity surfaces of the laser bar (10) by means of laser (30) radiation, thereby reducing light absorption of the cavity surfaces, improving the bandgap width thereof, reducing catastrophic optical mirror surface damage thereof, and improving the maximum output power of laser chips.
H01S 5/34 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
H01L 51/00 - Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives
A laser light source (1), comprising a support shaft member (10) and a first light source module (20). The support shaft member (10) comprises an outer peripheral surface (14); the first light source module (20) comprises a plurality of first light source structures (200) arranged equidistantly around the axis of the support shaft member (10), each first light source structure (200) comprising a first heat sink substrate (210) and a corresponding first laser chip (220), the first heat sink substrate (210) comprising an adjacent fixing surface (211) and a mounting surface (213), the fixing surface (211) being fixed to the outer peripheral surface along the direction parallel to the axis of the support shaft member (10), and the first laser chip (220) being arranged on the mounting surface (213). The present laser light source (1) integrates the first heat sink substrate (210) and the first laser chip (220) onto the support shaft member (10), so that an emergent light beam with good light distribution can be emitted without the need for an optical element for light shaping.
The present application provides an alignment method for backside photolithography process of the wafer, the alignment method includes: cutting the wafer, and using at least two edges formed by cutting as the first alignment mark; bonding the front side of the wafer to the gasket to form a composite wafer; aligning the first alignment mark with the corresponding second alignment mark on the photomask for backside photolithography. This method is not limited by wafer thickness and material, and reduces the secondary input of the photolithography equipment; meanwhile, the probability of fragments of thin wafers in the photolithography process can be reduced, and the yield of the product is effectively improved.
H01L 23/544 - Marques appliquées sur le dispositif semi-conducteur, p. ex. marques de repérage, schémas de test
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
23.
SUBSTRATE FOR SOLDERING ELECTRONIC COMPONENT, MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE
The present application provides a substrate for soldering an electronic component. The substrate comprises a substrate board and a position-limiting frame made from a solder resist material. The substrate board comprises an installation surface, and the position-limiting frame is fixed to the installation surface and encloses and forms a position-limiting region on the installation surface. The position-limiting region is used to position the electronic component on the installation surface to assist with the soldering of the electronic component to the substrate board. The present application further provides a semiconductor device comprising an electronic component and the substrate, wherein the electronic component is positioned in the position-limiting region and is soldered and fixed to the installation surface of the substrate. The substrate of the present application uses the position-limiting frame provided on the installation surface to suppress an uncontrollable flow of a solder material during a soldering process, so as to accurately limit a position of an electronic component, and enable the electronic component to be soldered in the position-limiting region enclosed by the position-limiting frame, thereby effectively preventing position shifting of the electronic component, and improving the product yield. The present application further provides a substrate manufacturing method.
H01L 23/488 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes formées de structures soudées
A spectrometer, comprising: a transmission system (110), comprising: a control device (116), for generating multiple wavelengths encoded data having one-to-one correspondence to multiple wave bands to be tested; a light source (119), for emitting light source light, the light source light comprising light beams of the multiple wave bands to be tested, and the light beams of the light source light of different wave bands to be tested being spatially separated from each other; and a modulation device (115), having multiple modulating subregions, the multiple modulating subregions modulating the light source light of the corresponding wave bands to be tested according to the corresponding wavelength encoded data and obtaining first test light having corresponding wavelength encoded data information, the first test light being transmitted in a first direction and irradiating to the surface of a target (P) to be tested; and a receiving system (130), for according to a relationship that the light intensity of first target light changes with time and the multiple wavelengths encoded data, determining the light beams, which are comprised in the received first target light, of the wave bands to be tested, and absorption and/or reflection characteristics of the target to be tested for the light beams of the different wave bands to be tested.
G01N 21/25 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes
Provided is a packaging system (10) for a micro-electro-mechanical system device. The packaging system comprises a first substrate (101) and a second substrate (102), and further comprises a sealing structure arranged between the first substrate and the second substrate, wherein the first substrate, the second substrate and the sealing structure enclose a closed space; a functional element (130) of a micro-electro-mechanical system device is arranged on the first substrate and/or the second substrate, and the functional element is located in the closed space; the sealing structure comprises a spacer group (110) and an adhesive (120); and the spacer group comprises at least two spacer units, each spacer unit is directly connected to one of the first substrate and the second substrate, and the spacer unit is indirectly connected to the other one of the first substrate and the second substrate by means of the adhesive. The packaging system simplifies the process and improves the sealing performance; in addition, the reliability of the structure is also improved. Further provided is a processing method corresponding to the packaging system.
A laser light source, comprising a laser device. The laser device comprises at least one laser (301), used for generating at least one light beam with different divergence angles along a first direction and a second direction; and a light-homogenized rob (303), comprising a light-incident end face and a light-exiting end face, the light-incident end face and the light-exiting end face being square. The light-incident end face receives at least one light beam with different divergence angles along the first direction and the second direction, the light-exiting end face outputs a homogenized light beam, and a diagonal line (X0) of the light-incident end face is parallel to the first direction or the second direction. The intensity and color distribution of the emitted light beam on a fluorescent light source surface are homogenized, the size of the required light-homogenized rob (303) is small, and the effects of low power consumption and low cost are achieved.
Disclosed is a light source system (10), comprising: a first excitation light source (11) for emitting first excitation light; a wavelength conversion structure (13) comprising a wavelength conversion material layer (131) used for receiving the first excitation light and converting at least part of the first excitation light into first excited light and then emitting same, with a transmission area (A) and a non-transmission area (B) surrounded by the transmission area (A) being defined in a surface, opposite an incident surface of the first excitation light, of the wavelength conversion material layer (131); and a second excitation light source (12) arranged on a side, away from the incident surface of the first excitation light, of the wavelength conversion structure (13) and used for emitting second excitation light that is emitted into the wavelength conversion material layer (131) from the transmission area (A). The wavelength conversion material layer (131) converts at least part of the second excitation light into second excited light and then emits same, and that part of the second excitation light which is not absorbed by the wavelength conversion material layer (131) is transmitted. An illumination apparatus comprising the light source system (10) is disclosed.
The present invention relates to the technical field of laser illumination and display, and disclosed are a fluorescent ceramic, a preparation method therefor and a light source device. The fluorescent ceramic comprises a ceramic matrix (11) and a fluorescent powder body (12) dispersed within the ceramic matrix (11), wherein air holes (13) are formed at the interior of crystal grains of the ceramic matrix (11). By means of the foregoing manner, the luminous efficiency of the fluorescent ceramic may be improved.
C04B 35/00 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques
An illumination system (10) comprises: an illumination light source (101), used to emit illumination light (111), wherein the illumination light (111) exits by means of an illumination light path; a detection light source (102), used to emit detection light (112), wherein the detection light (112) reaches a receiver (130) by means of a detection light path, wherein the detection light path comprises an emission light path from the detection light source (102) to a target object (11) and a reception light path from the target object (11) to the receiver (130); and a light modulation apparatus (120), comprising a micromirror array, provided on the illumination light path and the detection light path, used to modulate spatial distribution of the illumination light (111), and also used to modulate at least one of a direction, a phase, and spatial distribution of the detection light (112). Providing the light modulation apparatus (120) on the illumination light path and the detection light path allows the spatial distribution of the illumination light of the illumination light source (101) to be modulated, thereby achieving high-resolution illumination distribution. In addition, the invention achieves detection and scanning of a large field of view without a mechanical rotary structure, thereby achieving true illumination-detection integration. Moreover, the invention utilizes the core, high-cost light modulation apparatus multiple times, thereby increasing a utilization rate, and reducing system costs.
F21S 41/60 - Dispositifs d’éclairage spécialement adaptés à l’extérieur des véhicules, p. ex. phares caractérisés par une distribution lumineuse variable
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