Abrégé

Provided is an electronic device including a first electrode part including a conductive material, a second electrode part spaced apart from the first electrode part and including a conductive material, an active layer disposed between the first electrode part and the second electrode part, including a spontaneously polarizable material, and formed to optionally have a first mode having a first electrical resistance and a second mode having a value smaller than the first electrical resistance, and an electric field controller connected to the first electrode part and the second electrode part to apply an electric field.

Classes IPC  ?

• G11C 13/00 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage non couverts par les groupes , ou

Abrégé

Disclosed in one embodiment of the present invention is an electronic device comprising: a first electrode part containing a conductive material; a second electrode part spaced apart from the first electrode and containing a conductive material; an active layer, which is disposed between the first electrode part and the second electrode part, contains a spontaneous polarization material, and is formed so as to selectively have a first mode and a second mode, the first mode having a first electric resistance, and the second mode having a lower value than the first electric resistance; and an electric field control unit, which is connected to the first electrode part and the second electrode part and formed so as to apply an electric field.

Classes IPC  ?

• G11C 13/00 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage non couverts par les groupes , ou

Abrégé

Provided is an electronic device including a first electrode; a second electrode facing the first electrode; and an active layer between the first electrode and the second electrode, wherein at least one of the first electrode and the second electrode includes a first surface that is closest to the active layer and a second surface that is farthest from the active layer, a size of a cross-sectional horizontal area at the first surface is smaller than a size of a cross-sectional horizontal area at the second surface, the active layer includes a first region, which vertically overlaps the first surface, and a second region outside the first region, and a thickness of the active layer in the first region is smaller than a thickness of the active layer in the second region.

Classes IPC  ?

• H01L 45/00 - Dispositifs à l'état solide spécialement adaptés pour le redressement, l'amplification, la production d'oscillations ou la commutation, sans barrière de potentiel ni barrière de surface, p.ex. triodes diélectriques; Dispositifs à effet Ovshinsky; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
• G11C 13/00 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage non couverts par les groupes , ou

Abrégé

A variable low-resistance line memory device and an operating method thereof are provided. The memory device includes: a base including a spontaneous polarizable material; a gate arranged adjacent to the base; at least two polarization regions formed in the base by applying an electric field to the base through the gate, the at least two polarization regions having polarization in different directions from each other; a variable low-resistance line corresponding to a boundary between the at least two polarization regions selectively having polarization in different directions from each other; a source located to contact the variable low-resistance line; and a drain located to contact the variable low-resistance line, wherein the variable low-resistance line is formed in a region of the base, the region having a lower electrical resistance than other regions of the base adjacent to the variable low-resistance line.

Classes IPC  ?

• H01L 27/1159 - Mémoires mortes programmables électriquement; Procédés de fabrication à étapes multiples de ces dispositifs les électrodes de grille comprenant une couche utilisée pour ses propriétés de mémoire ferro-électrique, p.ex. semi-conducteur métal-ferro-électrique [MFS] ou semi-conducteur d’isolation métal-ferro-électrique-métal [MFMIS] caractérisées par la région noyau de mémoire
• G11C 11/22 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments électriques utilisant des éléments ferro-électriques
• H01L 27/11587 - Mémoires mortes programmables électriquement; Procédés de fabrication à étapes multiples de ces dispositifs les électrodes de grille comprenant une couche utilisée pour ses propriétés de mémoire ferro-électrique, p.ex. semi-conducteur métal-ferro-électrique [MFS] ou semi-conducteur d’isolation métal-ferro-électrique-métal [MFMIS] caractérisées par la configuration vue du dessus

Abrégé

A method of controlling a current path range using an electric field is disclosed, and the method of controlling a current path range includes applying an electric field to an active layer including a spontaneous polarization material through an application electrode disposed adjacent to the active layer to form a polarization region of the active layer, and forming a variable low resistance region corresponding to a boundary of the polarization region, wherein the variable low resistance region is a region of the active layer having a lower electrical resistance than another region of the active layer adjacent to the variable low resistance region and allows an electrical path to be formed.

Classes IPC  ?

• H02H 3/00 - Circuits de protection de sécurité pour déconnexion automatique due directement à un changement indésirable des conditions électriques normales de travail avec ou sans reconnexion
• H02N 99/00 - Matière non prévue dans les autres groupes de la présente sous-classe

Abrégé

One embodiment of the present invention is a variable low resistance line memory device and a method for operating same. Disclosed is a memory device and a method for operating same, the memory device comprising: a base including a spontaneous polarization material; a gate disposed adjacent to the base; at least two polarization regions which are formed in the base by applying an electric field to the base through the gate, and have polarizations in different directions; a variable low resistance line which corresponds to the boundary between the polarization regions selectively having the polarizations in different directions; a source positioned to be in contact with the variable low resistance line; and a drain positioned to be in contact with the variable low resistance line, wherein the variable low resistance line is formed in a region of the base in which the electrical resistance is lower than in the other regions adjacent to the variable low resistance line.

Classes IPC  ?

• H01L 45/00 - Dispositifs à l'état solide spécialement adaptés pour le redressement, l'amplification, la production d'oscillations ou la commutation, sans barrière de potentiel ni barrière de surface, p.ex. triodes diélectriques; Dispositifs à effet Ovshinsky; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives

Abrégé

One embodiment of the present invention provides an electronic element comprising: a first electrode; a second electrode facing the first electrode; and an active layer between the first electrode and the second electrode, wherein at least any one of the first electrode and the second electrode includes a first surface closest to the active layer and a second surface spaced farthest from the active layer, where the size of the horizontal cross-sectional area on the first surface is smaller than the size of the horizontal cross-sectional area on the second surface, the active layer includes a first region overlapping the first surface in a vertical direction and a second region which is an outer portion of the first region, and the thickness of the active layer in the first region is smaller than the thickness in the second region.

Classes IPC  ?

• H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
• H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
• H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
• H01L 21/8234 - Technologie MIS

Abrégé

An embodiment of the present invention discloses a method for controlling a current path range by using electric field, the method for controlling a current path range comprising: a step for applying electric field to an active layer via an application electrode to form a polarized region in the active layer, wherein the active layer includes a spontaneous polarization material, and the application electrode is disposed adjacent to the active layer; and a step for forming a variable low resistance region corresponding to the boundary of the polarization region. The variable low resistance region is a region that has a lower electrical resistance than other regions adjacent to the variable low resistance region among the regions of the active layer, and thus enables the formation of an electric path.

Classes IPC  ?

• H02N 99/00 - Matière non prévue dans les autres groupes de la présente sous-classe