The present application provides a high uniformity SiC crystal, a crystal bar, a substrate, and a semiconductor device, relating to the technical field of silicon carbide wafers. The SiC crystal is directly grown by using a PVT method without subsequent processing, the SiC crystal contains a faceted area and a non-faceted area, the faceted area is located on the outer circumferential end face of the SiC crystal, the doping concentration change rate of the faceted area is 1.5 times or more that of the non-faceted area, and/or the carrier concentration change rate of the faceted area is 5 times or more that of the non-faceted area. During subsequent processing of the crystal, the faceted area is removed, with a relatively low cutting loss rate, so that a whole crystal bar, as well as a wafer and a substrate processed therefrom, do not have faceted areas, thereby ensuring that a device end has higher yield, performance and reliability.
A high-uniformity SiC crystal, a crystal bar, a substrate and a semiconductor device are provided. The SiC crystal is obtained by direct growth through a PVT method without subsequent machining, and includes a facet region and a non-facet region. The facet region is located on an outer-circumference end face of the SiC crystal. A doping concentration change rate of the facet region is 1.5 times or above that of the non-facet region; and/or a carrier concentration change rate of the facet region is 5 times or above that of the non-facet region.
C30B 23/00 - Croissance des monocristaux par condensation d'un matériau évaporé ou sublimé
C30B 31/06 - Procédés de diffusion ou de dopage des monocristaux ou des matériaux polycristallins homogènes de structure déterminéeAppareillages à cet effet par contact avec la substance de diffusion à l'état gazeux
3.
HIGH-QUALITY SiC CRYSTAL, CRYSTAL BAR, SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE
A high-quality SiC crystal, a crystal bar, a substrate, a preparation method, and a semiconductor device are provided. The SiC crystal contains a facet region and a non-facet region; and the facet region is located on an outer circumference of the SiC crystal, a distance between an edge of the facet region away from the outer circumference and the outer circumference does not exceed 3% of a diameter of the SiC crystal, and the SiC crystal is obtained by adopting a PVT method through direct growth without subsequent processing. In a subsequent processing process of the crystal, the facet region is eliminated, and the situation that the entire crystal bar and a wafer and substrate processed accordingly have no facet region is implemented with a low cutting loss rate.
H10D 62/832 - Corps semi-conducteurs, ou régions de ceux-ci, de dispositifs ayant des barrières de potentiel caractérisés par les matériaux étant des matériaux du groupe IV, p. ex. Si dopé B ou Ge non dopé étant des matériaux du groupe IV comprenant deux éléments ou plus, p. ex. SiGe
4.
HIGH-QUALITY SIC CRYSTAL, CRYSTAL BAR, SUBSTRATE, AND SEMICONDUCTOR DEVICE
The present application provides a high-quality SiC crystal, a crystal bar, a substrate, and a semiconductor device, relating to the technical field of silicon carbide wafers. The SiC crystal contains a faceted area and a non-faceted area, the faceted area is located on the outer circumferential end face of the SiC crystal, the distance between the edge of the faceted area away from the outer circumferential end face and the outer circumferential end face does not exceed 3% of the diameter of the SiC crystal, and the SiC crystal is directly grown by using a PVT method without subsequent processing. During subsequent processing of the crystal, the faceted area is removed, with a relatively low cutting loss rate, so that a whole crystal bar, as well as a wafer and a substrate processed therefrom, do not have faceted areas. The present invention ensures that a device end has higher yield, performance and reliability.
C30B 23/00 - Croissance des monocristaux par condensation d'un matériau évaporé ou sublimé
H01L 21/04 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs ayant des barrières de potentiel, p. ex. une jonction PN, une région d'appauvrissement ou une région de concentration de porteurs de charges
A P-type silicon carbide crystal, which relates to the technical field of silicon carbide crystal growth. The maximum value of the resistivity of the P-type silicon carbide crystal is less than or equal to 3 Ω*cm, and the axial resistivity change rate at the same radial position is less than or equal to 25%. The content of impurities in a P-type element is greater than or equal to 1E17atoms/cm 3, and the impurity change rate of the P-type element is less than or equal to 15%. The P-type silicon carbide crystal has more uniform doping, a more uniform resistivity and a higher crystal transmittance.
The present application relates to the field of semiconductor radio frequency devices, and specifically relates to a silicon carbide-based heterogeneous composite substrate material, comprising a base layer, an intermediate layer and a surface layer. The base layer is made of silicon carbide, the intermediate layer is made of polycrystalline silicon and silicon dioxide, and the surface layer is made of lithium niobate or lithium tantalate; surface profile data of the silicon carbide-based heterogeneous composite substrate material is: Warp<50 μm and BOW<40 μm; the bonding strength is as high as 2 J/m2 or more. According to the present application, silicon carbide is selected to make a base layer to prepare a composite substrate material, and the characteristics such as mechanical properties, high chemical stability, high carrier mobility, high thermal conductivity, high sound velocity, high temperature resistance and corrosion resistance of silicon carbide can be utilized, so that a composite substrate has high sound velocity, high bandwidth and high power. The composite substrate prepared in the present application has low stress and high bonding strength.
A silicon carbide substrate having a regular crystalline phase structure, relating to the technical field of silicon carbide production and processing. The silicon carbide substrate is divided into first square regions containing micropipes or dislocations and having a length of 100 μm, and second square regions not containing micropipes or dislocations and having a length of 100 μm. The ratio of the number of first square regions to the number of second square regions is 1:(1.64-21.4); and the internal stress of the first square regions is greater than that of the second square regions. A lattice structure of the silicon carbide substrate has high regularity, so that the lattice distortion and defect density are reduced, thereby improving the performance and the yield of silicon carbide substrates, and expanding the application range of silicon carbide substrates.
Disclosed are a silicon carbide lapped wafer and a method for non-destructively detecting a lapping damage layer of the lapped wafer, belonging to the technical field of silicon carbide production and processing. The detection method comprises the following steps: (1) extending inward 20-30 μm from a surface of the lapped wafer, so as to perform Raman testing on a surface layer of the lapped wafer, to obtain a stress distribution diagram of the surface layer of the lapped wafer; (2) dividing the stress distribution diagram into first square areas and second square areas having a side length of 100 microns, the first square areas being areas having stress absolute values greater than 35 MPa, and the second square areas being areas having stress absolute values less than or equal to 30 MPa, and determining whether the lapping damage layer of the lapped wafer is completely removed according to a proportion of first square areas. The present application can directly perform non-destructive testing of a lapped wafer by means of Raman testing, thereby reflecting the size of a lapping damage layer of the lapped wafer, and can also be directly used to guide improvement of the lapping process and polishing process based on test results.
A silicon carbide substrate having high crystal quality, belonging to the technical field of silicon carbide production and processing. The silicon carbide substrate comprises a first main surface and a second main surface; the first main surface has a central area and an annular area surrounding the central area, the width of the annular area extending inward from an edge of the substrate being 5-30 mm; the central area is divided into square areas, each having a side length of 5 mm, the internal stress of each square area being less than the internal stress of the annular area, and the internal stress being the stress value detected at least 30 μm vertically extending from the first main surface or the second main surface into the silicon carbide substrate. The internal stress in the central area of the silicon carbide substrate is relatively low, and the stress on the substrate can be evenly distributed, proving that the quality of the silicon carbide substrate is high and subsequent crystal quality can be improved, thereby expanding the scope of use of the silicon carbide substrate.
The present invention relates to the technical field of silicon carbide cutting. Provided are a silicon carbide stripping film based on laser cracking, and a processing method and a laser stripping system. The processing method comprises: S01, detecting a (0001) crystal face of a silicon carbide crystal ingot to obtain crystal face position information; S02, calculating an included angle between the crystal face position information and a first plane, and determining whether the included angle meets the requirement for a preset included angle; S03a, if so, starting a first laser beam to scan the silicon carbide crystal ingot, so as to form a face to be stripped that contains a plurality of cracks and extends along the first plane; S03b, if not, adjusting the angle of the silicon carbide crystal ingot and/or the angle of a first direction, and returning to step S02 until the included angle meets the requirement for the preset included angle; and S04, applying vibration to the face to be stripped, so as to obtain the silicon carbide stripping film. The processing method provided in the present invention can reduce stress and material loss of the silicon carbide stripping film, and improve the quality of the silicon carbide stripping film.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
12.
SILICON CARBIDE SUBSTRATE OF 8 INCHES OR MORE, AND LOW-STRESS MACHINING METHOD THEREFOR
The present invention relates to the field of crystalline materials. Provided are a silicon carbide substrate of 8 inches or more, and a low-stress machining method therefor. The silicon carbide substrate has a relative force not higher than 50. The machining method comprises the following steps: detecting a (0001) crystal face of a silicon carbide crystal ingot to obtain crystal face position information; then calculating an included angle between the crystal face position information and a first plane, and determining whether the included angle meets the requirement for a preset included angle, wherein the first plane always stays perpendicular to a first direction where a first laser beam is located; and applying vibration to a face to be stripped, so as to obtain a silicon carbide stripping film. Then, the stripping film is sequentially thinned, polished and cleaned to obtain the silicon carbide substrate of 8 inches or more. The silicon carbide substrate of 8 inches or more provided in the present invention solves the problems of high machining stress, excessive warpage and curvature, an overly high surface metal ion concentration, a poor hydrophilic effect, etc. of an existing silicon carbide substrate.
C30B 33/00 - Post-traitement des monocristaux ou des matériaux polycristallins homogènes de structure déterminée
B28D 5/00 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p. ex. des matériaux pour semi-conducteursAppareillages ou dispositifs à cet effet
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
B24B 7/22 - Machines ou dispositifs pour meuler les surfaces planes des pièces, y compris ceux pour le polissage des surfaces planes en verreAccessoires à cet effet caractérisés par le fait qu'ils sont spécialement étudiés en fonction des propriétés de la matière des objets non métalliques à meuler pour meuler de la matière inorganique, p. ex. de la pierre, des céramiques, de la porcelaine
B24B 37/10 - Machines ou dispositifs de rodageAccessoires conçus pour travailler les surfaces planes caractérisés par le déplacement de la pièce ou de l'outil de rodage pour un rodage simple face
B24B 37/04 - Machines ou dispositifs de rodageAccessoires conçus pour travailler les surfaces planes
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
03 - Produits cosmétiques et préparations de toilette; préparations pour blanchir, nettoyer, polir et abraser.
09 - Appareils et instruments scientifiques et électriques
14 - Métaux précieux et leurs alliages; bijouterie; horlogerie
38 - Services de télécommunications
40 - Traitement de matériaux; recyclage, purification de l'air et traitement de l'eau
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
Industrial silicon; silicon; crystalline silicon; carbon;
powdered carbon for use in the manufacture of batteries;
silicon carbide [raw material]; industrial chemicals;
industrial silicon carbide; fertilizers; adhesives for
industrial purposes. Polishing preparations; polishing paper; grinding
preparations; silicon carbide [abrasive]; corundum
[abrasive]; abrasives; sandpaper; carbides of metal
[abrasives]; diamantine [abrasive]; emery cloth. Computers; transmitters of electronic signals; surveying
apparatus and instruments; optical apparatus and
instruments; semi-conductors; transistors [electronic];
electronic chip; batteries, electric; semiconductor wafer;
inverters [electricity]; switches, electric; relays,
electric; electric vehicle charging pile; battery chargers;
semiconductor device. Unprocessed or semi-processed precious metals; presentation
boxes for jewellery; precious stones; semi-precious stones;
rings [jewellery]; paste jewellery; necklaces [jewellery];
necklace; pendant; jewellery; watches. Simultaneous broadcasting of television programmes on global
communication network, the Internet and wireless networks;
information in the field of telecommunications; satellite
transmission; radio communications; rental of equipment and
instruments for computer communication; network transmission
of sound, images, signals and data; satellite transmission
of sound, images, signals and data; digital network
communication services; providing signal transmission for
electronic commerce via telecommunication systems and data
communication systems; rental of satellite transmission
capacity. Abrasion; grinding; customized material assembly (for
others); metal plating; sorting of waste and recyclable
material [transformation]; semiconductor wafer etching;
semiconductor wafer dicing; electroplating; processing of
materials by laser beam; information relating to material
treatment; gem cutting; processing of semiconductor wafers. Research on semiconductor processing technology;
technological research; chemical research; conducting
technical project studies; material testing; industrial
design; technical project studies in the field of
construction; design and development of electronic data
security systems; research and development of computer
software; computer systems integration services.
14.
SILICON CARBIDE SINGLE CRYSTAL WAFER AND INGOT, AND PREPARATION METHOD THEREFOR
The present application relates to a silicon carbide single crystal wafer and ingot, and a preparation method therefor, belonging to the field of semiconductor materials. The silicon carbide single crystal wafer comprises a nitrogen element. The silicon carbide single crystal wafer has hexagonal color spots of no greater than 50 in number, and edge parts forming the hexagonal color spots are perpendicular to a <10−10> direction. In the present application, a novel defect existing in a nitrogen-containing silicon carbide single crystal wafer is discovered, that is, hexagonal color spots. The color of the hexagonal color spots is different from the color of the silicon carbide body region. However, the novel defect is different from the planar hexagonal void defect and is not a hexagonal cavity, the hexagonal color spots may cause non-uniform resistivity in the silicon carbide single crystal wafer, which may severely affect electrical properties of a semiconductor device made from the silicon carbide single crystal wafer, for example causing a failure in a device made on the silicon carbide single crystal wafer. Thus, in the present application, a silicon carbide single crystal wafer and silicon carbide crystal ingot containing a small number of hexagonal color spots are provided.
C30B 23/00 - Croissance des monocristaux par condensation d'un matériau évaporé ou sublimé
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
03 - Produits cosmétiques et préparations de toilette; préparations pour blanchir, nettoyer, polir et abraser.
09 - Appareils et instruments scientifiques et électriques
14 - Métaux précieux et leurs alliages; bijouterie; horlogerie
38 - Services de télécommunications
40 - Traitement de matériaux; recyclage, purification de l'air et traitement de l'eau
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
(1) Industrial silicon; silicon; crystalline silicon; carbon; powdered carbon for use in the manufacture of batteries; silicon carbide [raw material]; industrial chemicals; industrial silicon carbide; fertilizers; adhesives for industrial purposes.
(2) Polishing preparations; polishing paper; grinding preparations; silicon carbide [abrasive]; corundum [abrasive]; abrasives; sandpaper; carbides of metal [abrasives]; diamantine [abrasive]; emery cloth.
(3) Computers; transmitters of electronic signals; surveying apparatus and instruments; optical apparatus and instruments; semi-conductors; transistors [electronic]; electronic chip; batteries, electric; semiconductor wafer; inverters [electricity]; switches, electric; relays, electric; electric vehicle charging pile; battery chargers; semiconductor device.
(4) Unprocessed or semi-processed precious metals; presentation boxes for jewellery; precious stones; semi-precious stones; rings [jewellery]; paste jewellery; necklaces [jewellery]; necklace; pendant; jewellery; watches. (1) Simultaneous broadcasting of television programmes on global communication network, the Internet and wireless networks; information in the field of telecommunications; satellite transmission; radio communications; rental of equipment and instruments for computer communication; network transmission of sound, images, signals and data; satellite transmission of sound, images, signals and data; digital network communication services; providing signal transmission for electronic commerce via telecommunication systems and data communication systems; rental of satellite transmission capacity.
(2) Abrasion; grinding; customized material assembly (for others); metal plating; sorting of waste and recyclable material [transformation]; semiconductor wafer etching; semiconductor wafer dicing; electroplating; processing of materials by laser beam; information relating to material treatment; gem cutting; processing of semiconductor wafers.
(3) Research on semiconductor processing technology; technological research; chemical research; conducting technical project studies; material testing; industrial design; technical project studies in the field of construction; design and development of electronic data security systems; research and development of computer software; computer systems integration services.
40 - Traitement de matériaux; recyclage, purification de l'air et traitement de l'eau
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
03 - Produits cosmétiques et préparations de toilette; préparations pour blanchir, nettoyer, polir et abraser.
09 - Appareils et instruments scientifiques et électriques
14 - Métaux précieux et leurs alliages; bijouterie; horlogerie
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
Simultaneous broadcasting of television programmes on global communication network, the Internet and wireless networks; providing information in the field of telecommunications; satellite transmission; radio communications; rental of equipment and instruments for computer communication, namely, rental of computer communication apparatus and instruments; network transmission of sound, images, signals and data; satellite transmission of sound, images, signals and data; digital network communication services, namely, communications by fiber optic networks; providing signal transmission for electronic commerce via telecommunication systems and data communication systems; rental of satellite transmission capacity, namely, rental of access time to global computer networks Abrasion, namely, burnishing by abrasion; grinding; customized material assembly for others, namely, custom manufacturing of computers for others; metal plating; sorting of waste and recyclable material; semiconductor wafer etching; semiconductor wafer dicing, namely, cutting of semiconductor wafers; electroplating; processing of materials by laser beam, namely, treatment of materials by means of laser beams; providing information relating to material treatment; gem cutting; processing of semiconductor wafers Industrial silicon; silicon; crystalline silicon; carbon; powdered carbon for use in the manufacture of batteries; silicon carbide for use as a raw material in the manufacture of other goods; industrial chemicals; industrial silicon carbide; fertilizers; adhesives for industrial purposes Polishing preparations; polishing paper; grinding preparations, namely, polishing, scouring and abrasive preparations; silicon carbide for use as an abrasive; corundum for use as an abrasive; abrasives, namely, flexible abrasives; sandpaper; carbides of metal for use as an abrasive; diamantine for use as an abrasive; emery cloth Computers; transmitters of electronic signals; surveying apparatus and instruments; optical apparatus and instruments, namely, optical cables; semi-conductors; transistors; electronic chips for the manufacture of integrated circuits; batteries, electric; semiconductor wafers; inverters; switches, electric; relays, electric; electric vehicle charging piles; battery chargers; semiconductor devices Unprocessed and semi-processed precious metals; presentation boxes for jewellery; precious stones; semi-precious stones; rings being jewellery; paste jewellery; necklaces; pendants; jewellery; watches Research on semiconductor processing technology; technological research in the field of manufacturing processes; chemical research; conducting technical project studies, namely, conducting scientific feasibility studies; material testing; industrial design; technical project studies in the field of construction, namely, research in the field of building construction; design and development of electronic data security systems; research and development of computer software; computer systems integration services
A rare earth element-doped silicon carbide powder, comprising a silicon carbide crystal phase and a rare earth element silicide, wherein the rare earth element silicide is doped in the silicon carbide crystal phase. The doping concentration of the rare earth element silicide in the silicon carbide crystal phase is 0.001-5 wt%. In the rare earth element-doped silicon carbide powder, the rare earth element silicide is doped in the silicon carbide crystal phase, so that the rare earth element is uniformly doped in the silicon carbide powder, and during crystal growth, the rare earth element is gradually released along with the sublimation of the silicon carbide powder, thus achieving the uniform doping of the rare earth element in terms of both time and space, and thereby effectively inhibiting the generation of polymorphic defects in the crystal; in addition, the rare earth element silicide is obtained by selecting and using an oxide of the rare earth element with a relatively high purity, so that the production cost of the rare earth element-doped silicon carbide powder is greatly reduced, and the product purity is improved.
A shock absorption device for a vacuum reaction furnace and a crystal growing furnace. The shock absorption device comprises a connecting pipeline, a first air cushion (4), a second air cushion (5) and a pressure control device. The connecting pipeline comprises a vacuum pipeline (1), a damping shock absorption layer (2) and an air shock absorption layer (3) being sequentially arranged outside the vacuum pipeline (1); the connecting pipeline is used for connecting a vacuumizing device and a furnace body of the vacuum reaction furnace; the first air cushion (4) is used for accommodating a gas having constant air pressure, and is connected to the bottom of the vacuumizing device of the vacuum reaction furnace; and the second air cushion (5) is used for accommodating a gas having constant air pressure, and is connected to the bottom of the furnace body of the vacuum reaction furnace. The damping shock absorption layer (2) and the air shock absorption layer (3) are arranged outside the vacuum pipeline (1), and double shock absorption is thus achieved by means of the vacuum pipeline (1), remarkably reducing the shock of the vacuum pipeline (1); and air shock absorption is used for the crystal growing furnace, a vacuum pump and the pipeline, and the interior of the furnace body is thus basically in a static state, greatly improving the shock absorption effect.
F16F 9/04 - Ressorts, amortisseurs de vibrations, amortisseurs de chocs ou amortisseurs de mouvement de structure similaire, utilisant un fluide ou moyen équivalent comme agent d'amortissement utilisant un gaz uniquement dans une chambre à paroi flexible
19.
RAW MATERIAL FOR PRODUCING SILICON CARBIDE CRYSTAL, PREPARATION METHOD THEREFOR AND APPLICATION THEREOF
A raw material for producing a silicon carbide crystal, a preparation method therefor and an application thereof. The raw material is a hollow spherical silicon carbide powder material. The method uses an organic carbon source as a template agent to optimize the silicon carbide powder material by means of a hydrothermal method; the hydrothermal reaction can enable silicon carbide particles to be further refined, which are then stacked and adsorbed on a carbon ball template, thereby reducing the particle size of the powder material, increasing the specific surface area thereof by forming hollow nano-spherical particles, thus increasing the heating area, and ensuring that the powder is fully sublimated as well as the uniformity of the sublimation. The present invention is beneficial for increasing the utilization rate of a silicon carbide synthetic powder material in the production of a silicon carbide crystal, and improving the quality of the synthesis of a silicon carbide crystal.
C04B 35/565 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de non oxydes à base de carbures à base de carbure de silicium
C04B 35/622 - Procédés de mise en formeTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques
C30B 23/00 - Croissance des monocristaux par condensation d'un matériau évaporé ou sublimé
B01J 20/02 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtrationAbsorbants ou adsorbants pour la chromatographieProcédés pour leur préparation, régénération ou réactivation contenant une substance inorganique
B01J 20/30 - Procédés de préparation, de régénération ou de réactivation
A method and apparatus for deducing a physical property parameter, wherein same are used for solving the problem of it being difficult to acquire an accurate physical property parameter of a material under some specific conditions, thus affecting a simulation result obtained by means of carrying out simulation via simulation software. The method comprises: according to a preset physical property parameter of a material to be subjected to deduction, establishing a training data set by means of simulation software, and training a neural network model (101); determining an actual result parameter, under a preset process condition, corresponding to the material to be subjected to deduction (102); and according to the actual result parameter and by using the neural network model and a preset numerical optimization algorithm, determining an actual physical property parameter of the material to be subjected to deduction (103). By means of the method, a physical property parameter of a material that is as accurate as possible can be obtained on the basis of machine learning combined with a numerical optimization algorithm, so as to facilitate an accurate understanding of the physical property parameter, thereby enhancing the consistency between a simulation result and an actual result.
G16C 10/00 - Chimie théorique computationnelle, c.-à-d. TIC spécialement adaptées aux aspects théoriques de la chimie quantique, de la mécanique moléculaire, de la dynamique moléculaire ou similaires
21.
SILICON CARBIDE SINGLE CRYSTAL, SUBSTRATE AND DEVICE FOR PREPARATION
Disclosed is a crucible assembly for preparing a single crystal by using a PVT method, the crucible assembly comprising a crucible and a seed crystal column (6) arranged in the crucible, wherein a side wall of the crucible comprises an interlayer, the interlayer comprises an inner side wall (8) and an outer side wall (2), the porosity of the inner side wall (8) is higher than that of the outer side wall (2), the interlayer forms a raw material cavity (4), the extension direction of the seed crystal column (6) and that of the central axis of the crucible are approximately the same, and a crystal growth cavity is provided between the seed crystal column (6) and an inner surface of the inner side wall (8); and the crucible assembly and a crystal growth furnace can efficiently and rapidly prepare a silicon carbide single crystal that is large in size with an extremely low defect density, and a substrate of the silicon carbide single crystal, thereby laying the technical foundation for large-scale commercialization of the high-quality and low-cost silicon carbide substrate. The silicon carbide single crystal has a zero microtube with a spiral dislocation of less than 100 cm-2and an edge dislocation density of less than 220 cm-2.
Disclosed is a feeding device, comprising a supporting unit, a rotating unit and a feeding unit, which are connected in sequence. The supporting unit is rotatably connected to the rotating unit, the feeding unit is detachably connected to the rotating unit, and the supporting unit, the rotating unit and the feeding unit are configured such that the rotating unit drives the feeding unit to rotate, taking the supporting unit as an axis. The feeding unit further comprises a limiting assembly, and the limiting assembly, the rotating unit and the supporting unit are configured so as to adjust the rotation angle of the rotating unit. The feeding device carries out feeding in a rotating manner, and the limiting assembly is configured to limit the rotation angle of the feeding unit, such that a loading and/or feeding position is fixed and accurate. In addition, the loading position is transferred from the interior of an apparatus to the exterior of the apparatus for operation, such that rapid filling and loading can be achieved in one operation, thereby improving the usage efficiency of the apparatus and reducing the labor intensity of an operator.
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
A lifting mechanism having two leadscrews comprises: a positioning plate (2); a positioning frame (4) located above the positioning plate (2); a lifting platform (6) provided between the positioning frame (4) and the positioning plate (2); at least one pair of leadscrews (8), the at least one pair of leadscrews (8) comprising a first leadscrew (82) and a second leadscrew (84), the first leadscrew (82) and the second leadscrew (84) being movably connected to the positioning frame (4) and the positioning plate (2), and the first leadscrew (82) and the second leadscrew (84) engaging with the lifting platform (6) in a helical transmission manner; a rotary drive assembly (10) provided on the positioning plate (2) or the positioning frame (4), the rotary drive assembly (10) comprising at least one driving shaft, a first synchronous transmission mechanism (12) being provided between the driving shaft and the first leadscrew (82), a second synchronous transmission mechanism (14) being provided between the first leadscrew (82) and the second leadscrew (84); and at least one tensioning assembly (16), wherein the tensioning assembly (16) is used to tension the second synchronous transmission mechanism (14). The lifting mechanism having two leadscrews performs lifting smoothly in a vertical direction. The lifting platform also has high repositioning precision, such that the levelness of the two-leadscrew lifting platform remains unchanged when subjected to a pre-tensioning force or a load change.
B66F 7/14 - Châssis de levage, p. ex. pour lever des véhiculesAscenseurs à tablier à tabliers supportés directement par des crics par des crics mécaniques à vis
B66F 7/28 - Détails de structure, p. ex. butées d'arrêt, organes de support pivotants, curseurs coulissants réglables aux dimensions de la charge
24.
METHOD FOR IMPROVING YIELD OF SILICON CARBIDE POWDER
Disclosed a method of improving the yield of silicon carbide powder, relating to the field of semiconductor material preparation. In the present application, a solid saccharide is added into the high-purity mixture of carbon powder and silicon powder; without the introduction of other impurities, after the saccharide is molten with the increasing of the temperature, a generated viscous liquid has high viscosity, and therefore, the layering of the carbon powder and the silicon powder can be prevented in the early stage of reaction; with the continuous increasing of the temperature, the saccharide is decomposed to generate other products, such as carbon dioxide and carbon monoxide; before the reaction temperature of the mixture is reached, these substances may be removed by means of vacuum pumping, and the mixture that is not layered is reserved, so that the reaction is performed more thoroughly, and thus the yield of the silicon carbide powder is improved.
A high-purity silicon carbide powder and a preparation method therefor, which relate to the field of semiconductor material preparation. Said preparation method for the high-purity silicon carbide powder comprises: oxidizing high-purity carbon powder, and providing a silica protective layer for the high-purity silicon powder to improve inertia of the silicon powder, so that the temperature for removing impurities from a material mixture is increased, the nitrogen desorption temperature upper limit is increased, nitrogen adsorbed in the material mixture is further desorbed, and the objective of reducing the content of nitrogen in the high-purity silicon carbide powder is achieved by means of vacuum cleaning.
The present invention provides a method for preparing high-purity silicon carbide powder, relating to the field of crystal material. The method for preparing high-purity silicon carbide powder according to the present invention comprises: (1) selecting high-purity silicon powder and high-purity carbon powder; (2) performing primary purification and secondary purification to the high-purity carbon powder, a graphite crucible and an insulation construction, the primary purification being performed by means of vacuum degassing, and the secondary purification being a high-temperature purification under inert gases; (3) adding the high-purity carbon powder obtained by the secondary purification in step (2) and the high-purity silicon powder in step (1) to the graphite crucible for reaction to obtain high-purity silicon carbide powder. According to the present invention, the carbon powder, the graphite crucible and the insulation construction are subject to pre-processing to reduce the nitrogen content and metal impurity content in the high-purity carbon powder, which is more simple in working process and more environment-friendly in comparison with the procedure of first synthesizing silicon carbide and then performing wet metallurgy processing. Furthermore, the method ensures that no impurity is introduced from the graphite crucible and the insulation construction during the process of synthesizing silicon carbide powder.
The present application belongs to the field of preparation of single crystal of silicon carbide, and a crucible for preparing single crystal of silicon carbide and use thereof are disclosed. The crucible for preparing single crystal of silicon carbide comprises a crucible body and at least one collar. The collar is provided outside the crucible body, and is axially movable along the crucible body. The crucible of the present application adds a screw thread and a matching collar outside the crucible body to realize fast switching of heating zones of the crucible, so that the adjustment of hot zone can be realized quickly and conveniently, and the manufacturing cost of the single crystal of silicon carbide and the single crystal substrate are greatly reduced at the same time. The method for improving the quality of continuously grown single crystal of silicon carbide can be used for continuously preparing single crystal of silicon carbide having a uniform convexity ratio by simply adjusting the relative positions of the crucible body and the collar without replacing the crucible. Furthermore, a specific hot field can be designed intentionally to change the gas phase transmission path inside the crucible, thereby achieving quick and efficient control of the hot zone and fluid.
The present application provides a chemical-mechanical polishing solution for silicon carbide having increased pH stability. The polishing solution comprises: an oxidant, a high hardness abrasive and a pH stabilizer, the pH stabilizer being aluminum nitrate. The polishing solution of the present application can maintain good pH stability during the process of chemical-mechanical polishing. The polishing solution also has stable and even dispersion. In the present application, aluminum nitrate is added as the pH stabilizer of the polishing solution, such that the polishing solution has a higher pH stability during the process of chemical-mechanical polishing, and is less prone to hard agglomeration. The polishing solution does not pollute to the environment and can be used in a curricular supply chain.
The present application relates to a silicon carbide single crystal growth device, comprising: a growth chamber for placing a raw materials and providing a site where the raw material is sublimated by heat, wherein the growth chamber is divided into a raw material portion for placing the raw material and an air flowing area for the sublimation and crystallization of the raw material; and several thermally conductive containers arranged in the growth chamber, wherein same are arranged at the raw material portion, and are arranged separately from the inner wall of the growth chamber. The present application can effectively adjust the Si/C ratio in the growth chamber during the growth of the silicon carbide single crystal, thereby reducing the carbon inclusion defects generated by the growth of a single crystal.
The present application discloses a high purity carbon material prepared using residue from silicon carbide crystal growth, a preparation method therefor and a use thereof. A method of the present application for utilizing residue from silicon carbide crystal growth comprises the following steps: S1, removing silicon carbide in residue from silicon carbide crystal growth to obtain a high purity carbon material; S2, using the high purity carbon material to prepare a filling material of a thermal insulation structure; S3, disposing the thermal insulation structure outside a crucible for silicon carbide crystal growth used to thermally insulate the crucible; and S4, when the filling material in the thermal insulation structure is eroded and can no longer be used for thermal insulation, repeating steps S1 to S4 for the eroded filling material. The method of the present application achieves secondary use of the residue from crystal growth, and realizes recycling of the thermal insulation material while also ensuring consistent thermal insulation performance of the thermal insulation material so as to reduce costs.
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
C30B 23/00 - Croissance des monocristaux par condensation d'un matériau évaporé ou sublimé
B09B 3/00 - Destruction de déchets solides ou transformation de déchets solides en quelque chose d'utile ou d'inoffensif
C01B 32/05 - Préparation ou purification du carbone non couvertes par les groupes , , ,
31.
HIGH-QUALITY SINGLE CRYSTAL SILICON CARBIDE, AND METHOD AND APPARATUS FOR PREPARING SAME
The present application provides an apparatus for preparing single crystal silicon carbide. The apparatus comprises: at least a first crucible and second crucible, at least two heating elements, and a thermal insulation structure. The at least a first crucible and second crucible communicate with each other; each crucible corresponds to at least one heating element, and the heating of each crucible is controlled independently. By using the twin crucibles of the present application for the production of single crystal silicon carbide, during the middle and later periods of a crystal growth stage, silicon atmosphere supplementation can be achieved for the crystal growth crucibles, and the formation of crystal carbon inclusions can be reduced or even eliminated.
mnn that reaches near an upper seed crystal, so as to obtain a high quality SiC crystal having a uniform surface without small patches and polymorphs. The present application increases the driving force for driving a component from raw materials to the surface of a seed crystal.
Disclosed is a method for preparing a high quality silicon carbide crystal. The method comprises the steps of thermal field assembly, heating, and crystal growing and cooling, wherein the thermal field assembly comprises: after placing a crystal-growing raw material and a silicon carbide seed crystal in a graphite crucible, disposing, on an outer wall of the graphite crucible, a first collar at a position approximately corresponding to the crystal-growing raw material and a second collar at a position approximately corresponding to the silicon carbide seed crystal, the thermal conductivity of the first collar being higher than that of graphite and the thermal conductivity of the second collar being lower than that of graphite. Further disclosed are a device and a thermal field structure for implementing the above method. The preparation method, device and thermal field structure can be used to increase the quality of a silicon carbide crystal by controlling the thermal field in a crystal-growing furnace, so as to avoid generation of carbon inclusion defects and to decrease the risk of crystal cracking, without requiring the introduction of additional components or complication of the preparation process.
The present application relates to the fields of silicon carbide single crystals and substrates, and disclosed thereby are a large-size high-purity silicon carbide single crystal, a substrate, a preparation method therefor, and a preparation device thereof. By means of improving the thermal field distribution of a PVT method, the present application changes the traditional method of producing an axial temperature gradient by means of dissipating heat from upper insulation holes, and instead uses a crucible having different wall thicknesses and an insulation structure having different thicknesses to produce an axial temperature gradient, while changing an insulation structure at an upper side of the crucible, thereby producing a thermal field structure having uniform radial temperature distribution; in particular, the radial distribution of the thermal field at the interior of a large-size crucible may be caused to be uniform; since electroactive impurity elements grow and enter a crystal following a temperature gradient, such a thermal field structure having uniform radial temperature distribution guides the electroactive impurity elements to be uniformly distributed in the radial direction, thereby preparing a large-size, high-purity semi-insulating silicon carbide single crystal and a single crystal substrate having uniform radial resistivity and low stress.
The present application belongs to the field of semiconductor materials and discloses a high-purity silicon carbide single crystal substrate and a preparation method therefor. The high-purity silicon carbide single crystal substrate at least comprises a silicon carbide single crystal substrate surface layer and a silicon carbide single crystal substrate body layer. The silicon carbide single crystal substrate surface layer has an intrinsic point defect concentration lower than that of the silicon carbide single crystal substrate body layer, and the silicon carbide single crystal substrate has semi-insulating properties. In the preparation method, a high-temperature rapid heat treatment and surface laser annealing is performed on a high-purity silicon carbide single crystal wafer, so as to remove point defects introduced into a region on a surface of a high-purity semi-insulating silicon carbide substrate, while retaining internal point defects located at a distance from the surface of the substrate, such that a clean region is created on a defect-free surface layer of the silicon carbide single crystal substrate, the semi-insulating properties of the silicon carbide single crystal substrate are retained, and optimal quality is obtained for a prepared GaN epitaxial layer.
The present application belongs to the field of semi-conductor materials and discloses a semi-insulating silicon carbide single crystal doped with a small amount of vanadium, a substrate prepared therefrom, and a preparation method therefor. The semi-insulating silicon carbide single crystal comprises shallow level impurities, a low concentration of a deep level dopant, and a very small amount of intrinsic point defects. The deep level dopant and the intrinsic point defects collectively compensate for the shallow level impurities, wherein the concentration of the deep level dopant is lower than that of a deep level dopant in existing doped semi-insulating silicon carbide single crystals; the concentration of the intrinsic point defects is the primary concentration of intrinsic point defects in the silicon carbide single crystal at room temperature, and the concentration of the intrinsic point defects does not affect the stability of the electrical performance of the silicon carbide single crystal The semi-insulating silicon carbide single crystal has a highly stable and highly uniform resistivity. The silicon carbide single crystal substrate prepared from the silicon carbide single crystal has a highly uniform resistivity and low stress, so as to confer the silicon carbide single crystal substrate with an excellent surface quality, and accordingly ensure stability and consistency in subsequent epitaxial quality.
The present application relates to the technical field of crystalline material processing. Disclosed are a high-flatness, low-damage and large-diameter monocrystalline silicon carbide substrate, and a manufacturing method therefor. The surface roughness of the substrate is less than or equal to 0.2 nm, a scratch die ratio of the substrate is less than 10%, a pit ratio is less than 0.1/cm2, and a bump ratio is less than 0.1/cm2. The manufacturing method comprises the following steps: performing fully-solidified abrasive treatment on monocrystalline silicon carbide, and then performing chemical mechanical polishing treatment to obtain the high-flatness, low-damage and large-diameter monocrystalline silicon carbide substrate, wherein the solidified abrasive treatment comprises line cutting and grinding wheel grinding, abrasive particles are solidified on cutting lines, and the abrasive particles are solidified on a grinding wheel. The high-flatness, low-damage and large-diameter monocrystalline silicon carbide substrate manufactured by the manufacturing method in the present application has low surface roughness, scratch die ratio, pit ratio and bump ratio, good surface data, and small thickness deviation, curvature, and warping degree.
Disclosed is a method for preparing a highly pure semi-insulating silicon carbide single crystal, belonging to the technical field of growing crystals, wherein by introducing a Group IVA element with a greater atomic size into a raw material while reducing the electrically active impurities therein, by using a doped SiC raw material for growing a crystal during the process of the growth of the crystal, and by introducing an appropriate amount of a Group IV element into a SiC crystal, the concentration of intrinsic point defects in the crystal is increased, full compensation for shallow energy level impurities is achieved, and the semi-insulating properties of the SiC crystal are achieved. The growth of the highly pure semi-insulating SiC crystal is achieved without rapid cooling, thereby decreasing stresses in the crystal, and improving the quality of the crystal; furthermore, by controlling the doping concentration, the concentration of intrinsic point defects introduced into the crystal can be well controlled, thereby realizing the adjustment of the electrical resistivity of the crystal.
The present invention relates to the technical field of crystal growth, and specifically relates to a method for preparing a semi-insulating silicon carbide single crystal. In the present invention, by means of doping a shallow-level acceptor element of an IIIA group element in a raw material, and by using a doped SiC raw material for crystal growth when growing crystals, the shallow-level acceptor element is introduced into an SiC crystal, thereby reaching sufficient compensation for a shallow-level donor impurity, and achieving semi-insulating properties for the SiC crystal. Using the present invention to grow a semi-insulating SiC crystal does not require the introduction of a high concentration point defect by means of rapid cooling, thereby reducing crystal stress and improving crystal quality; a relatively low concentration of point defects reduces instability in electrical performance. Furthermore, by means of controlling doping concentration, controllable adjustment of crystal resistivity may be achieved.
The present invention relates to the technical field of crystal growth, and specifically relates to a method for synthesizing a high-purity silicon carbide raw material and an application thereof: by means of a three-step reaction technique, forming a high-purity particle wherein SiC coats Si, an outer layer being SiC and an inner layer being Si; coating Si at the interior of SiC, and when a high-purity SiC single crystal is grown by using the particle as a raw material, sublimating a surface layer of SiC, and then forming residual carbon; the silicon that coats the interior may continue to react with the residual carbon to form new SiC, thereby continuously maintaining the Si/C ratio in equilibrium; simultaneously reducing carbon particles may reduce the formation of carbon inclusions within SiC single crystals during the growth of the crystal. Thus, the problems of impurities and the defect of carbon inclusion during the growth of SiC single crystals are solved from the source of SiC single crystal growth.
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
C01B 32/97 - Préparation à partir de SiO ou de SiO2
The present invention relates to the technical field of crystal growing, and specifically relates to a growing method inhibiting carbon inclusion defects in silicon carbide monocrystals. The method described in the present invention divides growth into two phases, inhibiting volatilization and escape of a silicon component by means of controlling different pressures, decreasing, or even eliminating, formation of inclusions; the growing method described in the present invention does not require addition of an external substance to growing raw materials, as inhibition of carbon inclusion formation may be realized by means of only simple adjustments of growing techniques, the method being easily implemented and relatively low-cost.
