Provided are a kit including a polishing liquid and a washing liquid and a method for manufacturing a semiconductor device using the kit. The kit, when used for a treatment in which a treatment target is subjected to chemical mechanical polishing and the treatment target subjected to chemical mechanical polishing is further washed, can suppress the occurrence of scratches on the treatment target surface and leaves less organic residues on the treatment target surface. The kit for use in subjecting a treatment target to chemical mechanical polishing and further washing the treatment target subjected to chemical mechanical polishing includes a polishing liquid and a washing liquid. The polishing liquid includes an abrasive grain, a nonionic surfactant, and a specific azole compound selected from the group consisting of benzotriazole and derivatives thereof and has a pH of 7.0 or more, and the washing liquid includes an amine compound.
An object is to provide a kit that includes a polishing fluid and a washing liquid which may enhance the flatness of a processed object and reduce the likelihood of organic residues remaining on the processed object when a processing object is subjected to chemical mechanical polishing using the kit and subsequently cleaned using the kit and a method for producing a semiconductor device in which the above kit is used. A kit used for chemical mechanical polishing of a processing object and cleaning of the processing object that has been subjected to the chemical mechanical polishing includes a polishing fluid and a washing liquid, the polishing fluid including abrasive grains and a nonionic surfactant, the polishing fluid having a pH of 7.0 or more, the washing liquid including at least one first compound selected from the group consisting of xanthine, a xanthine derivative, adenine, and an adenine derivative and at least one second compound other than the first compound, the second compound being selected from the group consisting of a secondary amine compound, a tertiary amine compound, and a quaternary ammonium compound.
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
3.
POLY-O-HYDROXYAMIDES COMPRISING NOVEL INDANE BIS-O-AMINOPHENOLS, PHOTOSENSITIVE COMPOSITIONS, DIELECTRIC FILMS, AND BUFFER COATINGS CONTAINING THE SAME
This disclosure describes highly soluble novel poly-o-hydroxyamides containing new indane bis-o-aminophenols, photosensitive compositions containing same, and methods and articles for use thereof.
C08G 69/32 - Polyamides dérivés, soit des acides amino-carboxyliques, soit de polyamines et d'acides polycarboxyliques dérivés de polyamines et d'acides polycarboxyliques à partir de diamines aromatiques et d'acides aromatiques dicarboxyliques avec des groupes amino et carboxylique liés tous deux aromatiquement
C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
C08L 79/08 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
C09D 179/08 - PolyimidesPolyesterimidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
4.
POLY-O-HYDROXYAMIDES COMPRISING NOVEL INDANE BIS-O-AMINOPHENOLS, PHOTOSENSITIVE COMPOSITIONS, DIELECTRIC FILMS, AND BUFFER COATINGS CONTAINING THE SAME
This disclosure describes poly-o-hydroxyamides containing novel indane bis-o-aminophenols, negative tone photosensitive compositions containing same, and methods and articles for use thereof.
C08G 69/32 - Polyamides dérivés, soit des acides amino-carboxyliques, soit de polyamines et d'acides polycarboxyliques dérivés de polyamines et d'acides polycarboxyliques à partir de diamines aromatiques et d'acides aromatiques dicarboxyliques avec des groupes amino et carboxylique liés tous deux aromatiquement
C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
C07C 205/27 - Composés contenant des groupes nitro liés à un squelette carboné le squelette carboné étant substitué de plus par des groupes hydroxy éthérifiés
C07C 217/80 - Composés contenant des groupes amino et hydroxy éthérifiés liés au même squelette carboné ayant des groupes amino et des groupes hydroxy éthérifiés liés à des atomes de carbone de cycles aromatiques à six chaînons du même squelette carboné ayant des groupes amino et des groupes hydroxy éthérifiés liés à des atomes de carbone de cycles aromatiques à six chaînons non condensés
C07C 217/82 - Composés contenant des groupes amino et hydroxy éthérifiés liés au même squelette carboné ayant des groupes amino et des groupes hydroxy éthérifiés liés à des atomes de carbone de cycles aromatiques à six chaînons du même squelette carboné ayant des groupes amino et des groupes hydroxy éthérifiés liés à des atomes de carbone de cycles aromatiques à six chaînons non condensés du même cycle aromatique à six chaînons non condensé
6.
POLYIMIDES COMPRISING NOVEL INDANE BIS-O-AMINOPHENOLS, PHOTOSENSITIVE COMPOSITIONS, DIELECTRIC FILMS, AND BUFFER COATINGS CONTAINING THE SAME
Preparation of polyimides and functional polyimides comprising novel indane bis-o-aminophenols and photosensitive compositions obtained therefrom are described.
C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
C08G 73/06 - Polycondensats possédant des hétérocycles contenant de l'azote dans la chaîne principale de la macromoléculePolyhydrazidesPolyamide-acides ou précurseurs similaires de polyimides
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
C09D 179/08 - PolyimidesPolyesterimidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
7.
POLY-O-HYDROXYAMIDES COMPRISING NOVEL INDANE BIS-O-AMINOPHENOLS, PHOTOSENSITIVE COMPOSITIONS, DIELECTRIC FILMS, AND BUFFER COATINGS CONTAINING THE SAME
This disclosure describes highly soluble novel poly-o-hydroxyamides containing indane bis-o-aminophenols, photosensitive compositions containing same, and methods and articles for use thereof.
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
C07C 215/86 - Composés contenant des groupes amino et hydroxy liés au même squelette carboné ayant des groupes hydroxy et des groupes amino liés à des atomes de carbone de cycles aromatiques à six chaînons du même squelette carboné ayant des groupes amino liés à des atomes de carbone de cycles aromatiques à six chaînons faisant partie de systèmes cycliques condensés formés par deux cycles
C08G 69/32 - Polyamides dérivés, soit des acides amino-carboxyliques, soit de polyamines et d'acides polycarboxyliques dérivés de polyamines et d'acides polycarboxyliques à partir de diamines aromatiques et d'acides aromatiques dicarboxyliques avec des groupes amino et carboxylique liés tous deux aromatiquement
9.
POLY-O-HYDROXYAMIDES COMPRISING NOVEL INDANE BIS-O-AMINOPHENOLS, PHOTOSENSITIVE COMPOSITIONS, DIELECTRIC FILMS, AND BUFFER COATINGS CONTAINING THE SAME
This disclosure describes poly-o-hydroxyamides containing novel indane bis-o-aminophenols, negative tone photosensitive compositions containing same, and methods and articles for use thereof.
Preparation of polyimides and functional polyimides comprising novel indane bis-o-aminophenols and photosensitive compositions obtained therefrom are described.
C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
G03F 7/16 - Procédés de couchageAppareillages à cet effet
H01L 23/29 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par le matériau
11.
POLY-O-HYDROXYAMIDES COMPRISING NOVEL INDANE BIS-O-AMINOPHENOLS, PHOTOSENSITIVE COMPOSITIONS, DIELECTRIC FILMS, AND BUFFER COATINGS CONTAINING THE SAME
This disclosure describes highly soluble novel poly-o-hydroxyamides containing new indane bis-o-aminophenols, photosensitive compositions containing same, and methods and articles for use thereof.
POLY-O-HYDROXYAMIDES COMPRISING NOVEL INDANE BIS-O-AMINOPHENOLS, PHOTOSENSITIVE COMPOSITIONS, DIELECTRIC FILMS, AND BUFFER COATINGS CONTAINING THE SAME
This disclosure describes highly soluble novel poly-o-hydroxyamides containing indane bis-o-aminophenols, photosensitive compositions containing same, and methods and articles for use thereof.
There are provided a method of manufacturing a treated substrate that can, in a substrate having on its surface at least two regions of a first region containing silicon and a second region made from a material different from that of the first region, suppress etching of the first region and achieve high etch selectivity between the two regions, and a method of manufacturing a semiconductor comprising the method of manufacturing a treated substrate. The method of manufacturing a treated substrate comprises a step 1 being a chemical solution treatment step, a step 2 being a cleaning step, and a step 3 being an etching step.
e.g.e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
C09D 5/00 - Compositions de revêtement, p. ex. peintures, vernis ou vernis-laques, caractérisées par leur nature physique ou par les effets produitsApprêts en pâte
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
The present disclosure is directed to etching methods that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
e.g.e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
The present document relates to a polishing composition that includes at least one abrasive, at least one pH adjuster, at least one guanamine compound, and water. The polishing composition can be used in a method of polishing a substrate including applying the polishing composition to a surface of a substrate and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate. The surface of the substrate can include tungsten and/or molybdenum.
The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
C09K 13/00 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
The present document relates to a polishing composition that includes at least one abrasive, at least one pH adjuster, at least one guanamine compound, and water. The polishing composition can be used in a method of polishing a substrate including applying the polishing composition to a surface of a substrate and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate. The surface of the substrate can include tungsten and/or molybdenum.
e.g.e.g., selectively removing a boron phosphorus glass (BPSG) film from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
C09K 13/10 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du bore
C23F 1/24 - Compositions acides pour le silicium ou le germanium
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
This disclosure relates to a dielectric film-forming composition that includes (a) at least one resin selected from the group consisting of: i) a fully imidized polyimide polymer; ii) a polyamic acid ester; iii) a cyclized polydiene resin; and iv) a mixture of a cyclized polydiene resin and a cyanate ester compound; and (b) at least one additive selected from a group consisting of: i) a polybenzoxazole (PBO) precursor; ii) PBO particles; iii) a mixture of PBO and silica particles; and iv) a PBO resin containing at least two reactive functional groups.
B05D 3/02 - Traitement préalable des surfaces sur lesquelles des liquides ou d'autres matériaux fluides doivent être appliquésTraitement ultérieur des revêtements appliqués, p. ex. traitement intermédiaire d'un revêtement déjà appliqué, pour préparer les applications ultérieures de liquides ou d'autres matériaux fluides par cuisson
B05D 5/12 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces pour obtenir des effets, finis ou des structures de surface particuliers pour obtenir un revêtement ayant des propriétés électriques spécifiques
This disclosure relates to a dielectric film-forming composition that includes (a) at least one resin selected from the group consisting of: i) a fully imidized polyimide polymer; ii) a polyamic acid ester; iii) a cyclized polydiene resin; and iv) a mixture of a cyclized polydiene resin and a cyanate ester compound; and (b) at least one additive selected from a group consisting of: i) a polybenzoxazole (PBO) precursor; ii) PBO particles; iii) a mixture of PBO and silica particles; and iv) a PBO resin containing at least two reactive functional groups.
C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
C08F 267/10 - Composés macromoléculaires obtenus par polymérisation de monomères sur des polymères d'acides polycarboxyliques non saturés ou de leurs dérivés tels que définis dans le groupe sur des polymères d'amides ou d'imides
This disclosure relates to a dielectric film-forming composition that includes (a) at least one meth(acrylate)-containing polyphenylene ether resin and (b) at least one second resin selected from the group consisting of: i) at least one fully imidized polyimide polymer; ii) at least one polyamic acid ester; iii) at least one cyclized polydiene resin; and iv) a mixture of a cyclized polydiene resin and a cyanate ester compound.
This disclosure relates to a dielectric film-forming composition that includes (a) at least one meth(acrylate)-containing polyphenylene ether resin and (b) at least one second resin selected from the group consisting of: i) at least one fully imidized polyimide polymer; ii) at least one polyamic acid ester; iii) at least one cyclized polydiene resin; and iv) a mixture of a cyclized polydiene resin and a cyanate ester compound.
B29C 41/00 - Façonnage par revêtement d'un moule, noyau ou autre support, c.-à-d. par dépôt de la matière à mouler et démoulage de l'objet forméAppareils à cet effet
B29C 41/02 - Façonnage par revêtement d'un moule, noyau ou autre support, c.-à-d. par dépôt de la matière à mouler et démoulage de l'objet forméAppareils à cet effet pour la fabrication d'objets de longueur définie, c.-à-d. d'objets séparés
B29K 23/00 - Utilisation de polyalcènes comme matière de moulage
B29K 67/00 - Utilisation de polyesters comme matière de moulage
B29K 71/00 - Utilisation de polyéthers comme matière de moulage
B29K 79/00 - Utilisation comme matière de moulage d'autres polymères contenant dans la chaîne principale uniquement de l'azote avec ou sans oxygène ou carbone
B29K 105/00 - Présentation, forme ou état de la matière moulée
C08L 9/00 - Compositions contenant des homopolymères ou des copolymères d'hydrocarbures à diènes conjugués
C08L 79/08 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
27.
MICROELECTRONIC DEVICES WITH GOOD RELIABILITY AND RELATED COMPOSITIONS AND METHODS
The present disclosure generally relates to microelectronic devices with good reliability and related compositions and methods. In some embodiments, the methods include providing a composition comprising a hydrophobic multifunctional (meth)acrylate crosslinker and a polymer, and reacting the composition to provide a dielectric layer, wherein, when the dielectric layer is present in a microelectronic device, the microelectronic device exhibits good reliability. In certain embodiments, the compositions include a fully imidized polyimide and a hydrophobic multifunctional (meth)acrylate crosslinker, wherein the dielectric composition is suitable to provide a dielectric layer that imparts good reliability to a microelectronic device when the dielectric layer is present in the device.
The present disclosure generally relates to microelectronic devices with good reliability and related compositions and methods. In some embodiments, the methods include providing a composition comprising a hydrophobic multifunctional (meth)acrylate crosslinker and a polymer, and reacting the composition to provide a dielectric layer, wherein, when the dielectric layer is present in a microelectronic device, the microelectronic device exhibits good reliability. In certain embodiments, the compositions include a fully imidized polyimide and a hydrophobic multifunctional (meth)acrylate crosslinker, wherein the dielectric composition is suitable to provide a dielectric layer that imparts good reliability to a microelectronic device when the dielectric layer is present in the device.
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
C08L 33/24 - Homopolymères ou copolymères des amides ou des imides
This disclosure relates to polishing compositions containing at least one abrasive, at least one polymer removal enhancer, and at least one solvent. The polishing compositions of this disclosure may optionally include at least one of a cationic surfactant, an azole-containing corrosion inhibitor, or a nonionic surfactant. The polishing compositions of this disclosure may polish a polymeric substrate at a rate of at least about 200 Å/min.
This disclosure relates to polishing compositions containing at least one abrasive, at least one polymer removal enhancer, and at least one solvent. The polishing compositions of this disclosure may optionally include at least one of a cationic surfactant, an azole-containing corrosion inhibitor, or a nonionic surfactant. The polishing compositions of this disclosure may polish a polymeric substrate at a rate of at least about 200 Å/min.
The present disclosure is directed to methods and systems of purifying bioderived organic solvents. The purified bioderived organic solvents can be used in a multistep semiconductor manufacturing process.
The present disclosure is directed to methods and systems of purifying bioderived organic solvents. The purified bioderived organic solvents can be used in a multistep semiconductor manufacturing process.
B01D 15/36 - Adsorption sélective, p. ex. chromatographie caractérisée par le mécanisme de séparation impliquant une interaction ionique, p. ex. échange d'ions, paire d'ions, suppression d'ions ou exclusion d'ions
B01D 36/02 - Combinaisons de filtres de différentes sortes
C07C 45/79 - SéparationPurificationStabilisationEmploi d'additifs par traitement solide-liquideSéparationPurificationStabilisationEmploi d'additifs par absorption-adsorption chimique
C07C 67/56 - SéparationPurificationStabilisationEmploi d'additifs par traitement solide-liquideSéparationPurificationStabilisationEmploi d'additifs par absorption-adsorption chimique
The present disclosure is directed to etching compositions that are useful for, e.g., selectively hafnium oxide from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
The present disclosure is directed to etching compositions that are useful for, e.g., selectively hafnium oxide from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
C02F 1/16 - Traitement de l'eau, des eaux résiduaires ou des eaux d'égout par chauffage par distillation ou évaporation utilisant la chaleur perdue provenant d'autres procédés
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
The present disclosure relates to cleaning compositions that can be used to clean semiconductor substrates. These cleaning compositions can be used to remove defects arising from previous processing steps on these semiconductor substrates. These cleaning compositions can remove the defects/contaminants from the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one organic acid and at least one organosilane compound.
This disclosure relates to a polishing composition that includes an abrasive; at least one Si-containing compound including an acidic group, an ester thereof, or a salt thereof; and water. This disclosure also features a method of using the polishing composition to polish a substrate.
This disclosure relates to a polishing composition that includes an abrasive; at least one Si-containing compound including an acidic group, an ester thereof, or a salt thereof; and water. This disclosure also features a method of using the polishing composition to polish a substrate.
C09G 1/02 - Compositions de produits à polir contenant des abrasifs ou agents de polissage
C01B 33/143 - Préparation d'hydrosols ou de dispersions aqueuses par traitement acide de silicates de solutions aqueuses de silicates
C01B 33/187 - Préparation de silice finement divisée ni sous forme de sol ni sous forme de gelPost-traitement de cette silice par traitement acide de silicates
The present disclosure relates to cleaning compositions that can be used to clean semiconductor substrates. These cleaning compositions can be used to remove defects arising from previous processing steps on these semiconductor substrates. These cleaning compositions can remove the defects/contaminants from the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one organic acid and at least one organosilane compound.
This disclosure relates to polishing compositions that include (1) at least one abrasive; (2) at least one organic acid or a salt thereof; (3) at least one first amine compound, the at least one first amine compound including an alkylamine having a 6-24 carbon alkyl chain; (4) at least one second amine compound containing at least two nitrogen atoms, the second amine compound being different from the first amine compound; and (5) an aqueous solvent.
The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing tantalum nitride (TaN) from a semiconductor substrate.
C09K 13/02 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un hydroxyde d'un métal alcalin
C09K 13/00 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage
C09K 15/30 - Compositions anti-oxydantesCompositions inhibant les modifications chimiques contenant des composés organiques contenant un hétérocycle avec au moins un azote comme membre du cycle
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon nitride from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
e.g.e.g., selectively removing silicon nitride from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
This disclosure relates to a dielectric film-forming composition that includes at least one cyclized polydiene resin, and one or both of at least one reactive functional compound and at least one catalyst.
C08F 279/02 - Composés macromoléculaires obtenus par polymérisation de monomères sur des polymères de monomères contenant plusieurs liaisons doubles carbone-carbone tels que définis dans le groupe sur des polymères de diènes conjugués
C08L 51/00 - Compositions contenant des polymères greffés dans lesquels le composant greffé est obtenu par des réactions faisant intervenir uniquement des liaisons non saturées carbone-carboneCompositions contenant des dérivés de tels polymères
C09D 11/101 - Encres spécialement adaptées aux procédés d’imprimerie mettant en œuvre la réticulation par énergie ondulatoire ou par radiation de particules, p. ex. réticulation par UV qui suit l’impression
C09D 11/107 - Encres d’imprimerie à base de résines artificielles contenant des composés macromoléculaires obtenus par des réactions faisant intervenir uniquement des liaisons non saturées carbone-carbone à partir d'acides non saturés ou de leurs dérivés
C09D 151/04 - Compositions de revêtement à base de polymères greffés dans lesquels le composant greffé est obtenu par des réactions faisant intervenir uniquement des liaisons non saturées carbone-carboneCompositions de revêtement à base de dérivés de tels polymères greffés sur des caoutchoucs
C25D 5/56 - Dépôt électrochimique sur des surfaces non métalliques de matières plastiques
H01L 21/30 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes
C09D 5/00 - Compositions de revêtement, p. ex. peintures, vernis ou vernis-laques, caractérisées par leur nature physique ou par les effets produitsApprêts en pâte
This disclosure relates to a dielectric film forming composition that includes at least one resin; and at least one acyl germanium compound, as well as related processes, films, dry film structures, and articles.
G03F 7/037 - Composés photopolymérisables non macromoléculaires contenant des doubles liaisons carbone-carbone, p. ex. composés éthyléniques avec des liants les liants étant des polyamides ou des polyimides
This disclosure relates to a dielectric film forming composition that includes at least one resin; and at least one acyl germanium compound, as well as related processes, films, dry film structures, and articles.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/18 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs ayant des barrières de potentiel, p. ex. une jonction PN, une région d'appauvrissement ou une région de concentration de porteurs de charges les dispositifs ayant des corps semi-conducteurs comprenant des éléments du groupe IV du tableau périodique, ou des composés AIIIBV, avec ou sans impuretés, p. ex. des matériaux de dopage
H01L 29/43 - Electrodes caractérisées par les matériaux dont elles sont constituées
This disclosure relates to a polishing composition that includes an abrasive, at least two pH adjusters, a barrier film removal rate enhancer, a low-k removal rate inhibitor; and an azole-containing corrosion inhibitor. This disclosure also features a method of using the polishing composition to polish a substrate containing copper and silicon oxide.
This disclosure relates to a polishing composition that includes an abrasive, at least two pH adjusters, a barrier film removal rate enhancer, a low-k removal rate inhibitor, and an azole-containing corrosion inhibitor. This disclosure also features a method of using the polishing composition to polish a substrate containing copper and silicon oxide.
The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing titanium nitride (TiN) from a semiconductor substrate without substantially forming a cobalt oxide hydroxide layer.
Provided is a semiconductor etching solution having a large etching ratio of SiGe relative to Si when an object containing Si and SiGe is treated and having excellent storage stability. The semiconductor etching solution includes: a fluoride ion source; a carboxylic acid; a percarboxylic acid; hydrogen peroxide; and bromide ions, and a content of the bromide ions is less than 500 mass ppm with respect to a total mass of the semiconductor etching solution.
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
A container for containing a raw material of a chemical liquid and a method of preparing a container are provided. The container at least includes an inner wall and solvent-treated surface of the inner wall. The method of preparing a container includes treating a surface of the inner wall with water and treating the surface the inner wall with an organic solvent.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
B08B 3/08 - Nettoyage impliquant le contact avec un liquide le liquide ayant un effet chimique ou dissolvant
B08B 9/08 - Nettoyage de récipients, p. ex. de réservoirs
B65D 1/02 - Bouteilles ou réceptacles similaires, à cols ou à ouvertures rétrécies analogues, conçus pour verser le contenu
This disclosure relates to a composition that includes at least one first ruthenium removal rate enhancer; at least one copper removal rate inhibitor; at least one low-k removal rate inhibitor; and an aqueous solvent.
The present disclosure relates to cleaning compositions that are used to clean semiconductor substrates. These cleaning compositions can remove the defects/contaminants arising from previous processing on the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one pH adjusting agent and at least one biosurfactant.
The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
A composition includes at least one pH adjuster, at least one chelating agent, at least one anionic surfactant, at least one nitrogen containing heterocycle, at least one alkylamine compound, and an aqueous solvent, wherein the composition has a pH of from about 7 to about 14.
A composition includes at least one pH adjuster, at least one chelating agent, at least one anionic surfactant, at least one nitrogen containing heterocycle, at least one alkylamine compound, and an aqueous solvent, wherein the composition has a pH of from about 7 to about 14.
G03F 1/22 - Masques ou masques vierges d'imagerie par rayonnement d'une longueur d'onde de 100 nm ou moins, p. ex. masques pour rayons X, masques en extrême ultra violet [EUV]Leur préparation
G03F 1/68 - Procédés de préparation non couverts par les groupes
G03F 1/82 - Procédés auxiliaires, p. ex. nettoyage ou inspection
This disclosure relates to polishing compositions containing at least one abrasive, at least one organic acid or a salt thereof, at least one organic solvent in an amount of from about 3% to about 50% by weight of the composition, and an aqueous solvent.
The present disclosure is directed to methods and systems of purifying solvents. The purified solvents can be used for cleaning a semiconductor substrate in a multistep semiconductor manufacturing process.
B01J 20/28 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtrationAbsorbants ou adsorbants pour la chromatographieProcédés pour leur préparation, régénération ou réactivation caractérisées par leur forme ou leurs propriétés physiques
B01D 39/16 - Autres substances filtrantes autoportantes en substance organique, p. ex. fibres synthétiques
The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
This disclosure relates to polishing compositions containing at least one abrasive, at least one organic acid or a salt thereof, at least one organic solvent in an amount of from about 3% to about 50% by weight of the composition, and an aqueous solvent.
The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process. More specifically, the present disclosure relates to compositions and processes for selective chemical etching Si relative to SiOx and/or SiN.
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
H01L 27/088 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant uniquement des composants semi-conducteurs d'un seul type comprenant uniquement des composants à effet de champ les composants étant des transistors à effet de champ à porte isolée
The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
C11D 3/26 - Composés organiques contenant de l'azote
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
H01L 21/302 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour changer leurs caractéristiques physiques de surface ou leur forme, p. ex. gravure, polissage, découpage
This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion containing a C4 to C40 hydrocarbon group; and a hydrophilic portion containing at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group; in which the hydrophobic portion and the hydrophilic portion are separated by zero to ten alkylene oxide groups. The polishing composition can have a pH of from about 2 to about 6.5.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
The present disclosure is directed to methods and systems of purifying solvents. The purified solvents can be used for cleaning a semiconductor substrate in a multistep semiconductor manufacturing process.
A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.
C09K 15/30 - Compositions anti-oxydantesCompositions inhibant les modifications chimiques contenant des composés organiques contenant un hétérocycle avec au moins un azote comme membre du cycle
This disclosure relates to a method that includes applying a polishing composition to a surface of a substrate; bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate to create a polished substrate; treating the polished substrate with a rinse solvent; flowing a vapor over a meniscus formed at an interface between air and the rinse solvent on the polished substrate. The vapor includes a first component containing a water miscible organic solvent, a second component containing a cleaning agent, and a third component containing an inert gas.
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
B08B 3/04 - Nettoyage impliquant le contact avec un liquide
B08B 3/10 - Nettoyage impliquant le contact avec un liquide avec traitement supplémentaire du liquide ou de l'objet en cours de nettoyage, p. ex. par la chaleur, par l'électricité ou par des vibrations
This disclosure relates to a method that includes applying a polishing composition to a surface of a substrate; bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate to create a polished substrate; treating the polished substrate with a rinse solvent; flowing a vapor over a meniscus formed at an interface between air and the rinse solvent on the polished substrate. The vapor includes a first component containing a water miscible organic solvent, a second component containing a cleaning agent, and a third component containing an inert gas.
The present disclosure relates to cleaning compositions that can be used to clean semiconductor substrates. These cleaning compositions can be used to remove defects arising from previous processing steps on these semiconductor substrates. These cleaning compositions can remove the defects/contaminants from the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one organic acid and at least one anionic polymer.
A polishing composition includes an anionic abrasive; a pH adjuster; a transition metal catalyst; and an amino acid. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises tungsten or molybdenum; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.
H01L 21/302 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour changer leurs caractéristiques physiques de surface ou leur forme, p. ex. gravure, polissage, découpage
A polishing composition includes an anionic abrasive, a pH adjuster a low-k removal rate inhibitor, a ruthenium removal rate enhancer, and water. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.
A polishing composition includes an anionic abrasive; a pH adjuster; a transition metal catalyst; and an amino acid. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises tungsten or molybdenum; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.
A polishing composition includes an anionic abrasive, a pH adjuster a low-k removal rate inhibitor, a ruthenium removal rate enhancer, and water. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.
The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
C09K 13/10 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du bore
The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.
The present disclosure provides a polishing composition that includes at least one first amine, at least one second amine, and other components such as azoles. The first amine has a low molecular weight, for example 120 g/mol or less. The second amine has a high molecular weight, for example 125 g/mol or higher. The compositions can polish substrates that include copper and molybdenum, or alloys of each, at a high selectivity of copper to molybdenum.
This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; and 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.
The present disclosure provides a polishing composition that includes at least one first amine, at least one second amine, and other components such as azoles. The first amine has a low molecular weight, for example 120 g/mol or less. The second amine has a high molecular weight, for example 125 g/mol or higher. The compositions can polish substrates that include copper and molybdenum, or alloys of each, at a high selectivity of copper to molybdenum.
This disclosure relates to a dry film structure that includes a carrier substrate; and a dielectric film supported by the carrier substrate. The dielectric film includes at least one dielectric polymer and low amounts of metals.
H01B 3/30 - Isolateurs ou corps isolants caractérisés par le matériau isolantEmploi de matériaux spécifiés pour leurs propriétés isolantes ou diélectriques composés principalement de substances organiques matières plastiquesIsolateurs ou corps isolants caractérisés par le matériau isolantEmploi de matériaux spécifiés pour leurs propriétés isolantes ou diélectriques composés principalement de substances organiques résinesIsolateurs ou corps isolants caractérisés par le matériau isolantEmploi de matériaux spécifiés pour leurs propriétés isolantes ou diélectriques composés principalement de substances organiques cires
This disclosure relates to a composition that includes at least one first ruthenium removal rate enhancer; at least one copper removal rate inhibitor; at least one low-k removal rate inhibitor; and an aqueous solvent.
A chemical liquid manufacturing apparatus is provided. The manufacturing apparatus at least includes an ion exchange medium and an ion adsorption medium configured downstream from the ion exchange medium. A material of the ion adsorption medium includes a resin material having an amide bond or an imide bond.
B01D 69/02 - Membranes semi-perméables destinées aux procédés ou aux appareils de séparation, caractérisées par leur forme, leur structure ou leurs propriétésProcédés spécialement adaptés à leur fabrication caractérisées par leurs propriétés
This disclosure relates to a composition that includes at least one first ruthenium removal rate enhancer; at least one copper removal rate inhibitor; at least one low-k removal rate inhibitor; and an aqueous solvent.
Provided is a semiconductor etching solution having a large etching ratio of SiGe relative to Si when an object containing Si and SiGe is treated and having excellent storage stability. The semiconductor etching solution includes: a fluoride ion source; a carboxylic acid; a percarboxylic acid; hydrogen peroxide; and bromide ions, and a content of the bromide ions is less than 500 mass ppm with respect to a total mass of the semiconductor etching solution.
Chemical mechanical polishing compositions include an abrasive, an additive, and water. The polishing compositions have a value of less than 800,000 for the relation: large particle counts/weight percent abrasive, when measured using a 0.2 μm bin size.
This disclosure relates to polishing compositions that include (1) at least one abrasive; (2) at least one organic acid or a salt thereof; (3) at least one amine compound; (4) at least one nitride removal rate reducing agent; and (5) an aqueous solvent.
This disclosure relates to polishing compositions that include (1) at least one abrasive; (2) at least one organic acid or a salt thereof; (3) at least one amine compound; (4) at least one nitride removal rate reducing agent; and (5) an aqueous solvent.
This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) alkanolamine; 3) an alkylene glycol; 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.
The present disclosure provides a composition that can polish substrates containing multiple metals, for example cobalt and tungsten. The compositions can provide favorable removable rates of those metals while mitigating corrosion, and show favorable polishing selectivity ratios with respect to other materials. The polishing composition of the present disclosure can include at least one abrasive, at least one organic acid, at least one anionic surfactant, at least one first amine compound comprising an alkylamine having a 6-24 carbon alkyl chain, at least one azole containing compound, an optional second amine compound comprising an aminoalcohol, an aqueous solvent, and, optionally a pH adjuster.
