Abrégé

The present invention provides a semiconductor substrate cleaning solution that exhibits excellent cleaning performance for CMP processed semiconductor substrates which have a tungsten-containing metal film, and that also exhibits excellent corrosion-inhibiting performance with respect to tungsten during the cleaning of a tungsten-containing metal film. A semiconductor substrate cleaning solution according to the present invention is used to clean semiconductor substrates and contains a polymer, an alkanolamine, an acid group-containing complexing agent, and water. The weight-average molecular weight of the polymer is 2,000-900,000, the content of the complexing agent relative to the total mass of the semiconductor substrate cleaning solution is at least 2.5 mass% and less than 20.0 mass%, and the pH of the semiconductor substrate cleaning solution is less than 7.0.

Classes IPC  ?

• C11D 17/08 - Savon liquideDétergents ou savons caractérisés par leur forme ou leurs propriétés physiques en capsules
• C11D 1/34 - Dérivés des acides du phosphore
• C11D 3/30 - AminesAmines substituées
• C11D 3/37 - Polymères
• C11D 7/22 - Composés organiques
• C11D 7/32 - Composés organiques contenant de l'azote
• H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe

Abrégé

The present invention provides a semiconductor substrate cleaning solution that has excellent cleaning capability for a semiconductor substrate including a metal film after having undergone CMP, and has low surface roughness of the metal film after the cleaning. The semiconductor substrate cleaning solution according to the present invention is to be used for cleaning a semiconductor substrate and contains a compound represented by formula (1), a compound represented by formula (2), a primary amino alcohol having a primary amino group or a secondary amino group, a tertiary amine, and a solvent.

Classes IPC  ?

• C11D 17/08 - Savon liquideDétergents ou savons caractérisés par leur forme ou leurs propriétés physiques en capsules
• C11D 1/62 - Composés d'ammonium quaternaire
• C11D 3/20 - Composés organiques contenant de l'oxygène
• C11D 3/30 - AminesAmines substituées
• C11D 3/43 - Solvants
• H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe

Abrégé

nn , where L represents an alkylene group, and n represents 3-55.

Classes IPC  ?

• B01D 61/14 - UltrafiltrationMicrofiltration
• B01D 61/58 - Procédés à plusieurs étapes
• B01D 71/26 - Polyalcènes
• B01D 71/32 - Polyhalogénures alcènyliques contenant des atomes de fluor
• B01D 71/34 - Fluorure de polyvinylidène
• B01D 71/36 - Polytétrafluoro-éthylène
• B01D 71/56 - Polyamides, p. ex. polyesters-amides
• C11D 1/72 - Éthers de polyoxyalkylèneglycols
• C11D 1/83 - Mélanges de composés non ioniques et anioniques
• C11D 3/30 - AminesAmines substituées
• H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe

Abrégé

22 removing performance; and a method for cleaning a semiconductor substrate subjected to CMP. A cleaning solution according to the present invention is for a semiconductor substrate subjected to a chemical mechanical polishing treatment, and contains perhalogen acid and halogen acid.

Classes IPC  ?

• C11D 17/08 - Savon liquideDétergents ou savons caractérisés par leur forme ou leurs propriétés physiques en capsules
• C11D 1/83 - Mélanges de composés non ioniques et anioniques
• C11D 3/04 - Composés inorganiques solubles dans l'eau
• C11D 3/20 - Composés organiques contenant de l'oxygène
• C11D 3/26 - Composés organiques contenant de l'azote
• C11D 3/28 - Composés hétérocycliques contenant de l'azote dans le cycle
• C11D 3/36 - Composés organiques contenant du phosphore
• C11D 3/37 - Polymères
• C11D 3/39 - Percomposés organiques ou inorganiques
• C11D 7/08 - Acides
• C11D 7/22 - Composés organiques
• C11D 7/26 - Composés organiques contenant de l'oxygène
• C11D 7/32 - Composés organiques contenant de l'azote
• C11D 7/36 - Composés organiques contenant du phosphore
• C11D 7/38 - Percomposés
• H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe

Abrégé

The present invention provides a cleaning liquid for a semiconductor substrate that has been subjected to chemical mechanical polishing (CMP). The cleaning liquid exhibits excellent cleaning performance and excellent corrosion prevention performance against both tungsten and cobalt. The present invention also provides a method for cleaning a semiconductor substrate that has been subjected to CMP. This cleaning liquid is for a semiconductor substrate that has been subjected to chemical mechanical polishing. The cleaning liquid contains a compound represented by formula (1), an alkanolamine and water. The pH of the cleaning liquid at 25ºC is 9.0 or more.

Classes IPC  ?

• C11D 3/20 - Composés organiques contenant de l'oxygène
• C11D 3/30 - AminesAmines substituées
• C11D 7/26 - Composés organiques contenant de l'oxygène
• C11D 7/32 - Composés organiques contenant de l'azote
• H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe

Abrégé

The present invention addresses the problem of providing a cleaning fluid for semiconductor substrates which is highly effective in preventing metallic layers from corroding. The present invention further addresses the problem of providing a method for cleaning a semiconductor substrate.　This cleaning fluid, which is for semiconductor substrates having undergone chemical mechanical polishing, comprises water and ingredient A having two or more onium structures in the molecule and has a pH at 25°C of 7.0-11.8.

Classes IPC  ?

• C11D 17/08 - Savon liquideDétergents ou savons caractérisés par leur forme ou leurs propriétés physiques en capsules
• C09K 3/14 - Substances antidérapantesAbrasifs
• C11D 3/20 - Composés organiques contenant de l'oxygène
• C11D 3/26 - Composés organiques contenant de l'azote
• C11D 3/34 - Composés organiques contenant du soufre
• C11D 3/36 - Composés organiques contenant du phosphore
• C11D 7/26 - Composés organiques contenant de l'oxygène
• C11D 7/32 - Composés organiques contenant de l'azote
• C11D 7/34 - Composés organiques contenant du soufre
• C11D 7/36 - Composés organiques contenant du phosphore
• B24B 37/00 - Machines ou dispositifs de rodageAccessoires
• H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe

Abrégé

The present invention addresses the problem of providing a processing liquid that is for semiconductor substrates and that provides excellent corrosion prevention performance to metal-containing layers. The present invention also addresses the problem of providing a chemical/mechanical polishing method and a semiconductor substrate processing method.　The processing liquid according to the present invention is for semiconductor substrates, contains water and component A having two or more onium structures per molecule, and has a pH of 6.0-13.5 at 25°C.

Classes IPC  ?

• C11D 17/08 - Savon liquideDétergents ou savons caractérisés par leur forme ou leurs propriétés physiques en capsules
• C09K 3/14 - Substances antidérapantesAbrasifs
• C11D 3/12 - Composés inorganiques insolubles dans l'eau
• C11D 3/26 - Composés organiques contenant de l'azote
• C11D 3/34 - Composés organiques contenant du soufre
• C11D 3/36 - Composés organiques contenant du phosphore
• C11D 3/43 - Solvants
• C11D 7/20 - Oxydes insolubles dans l'eau
• C11D 7/26 - Composés organiques contenant de l'oxygène
• C11D 7/32 - Composés organiques contenant de l'azote
• C11D 7/34 - Composés organiques contenant du soufre
• C11D 7/36 - Composés organiques contenant du phosphore
• C11D 7/50 - Solvants
• B24B 37/00 - Machines ou dispositifs de rodageAccessoires
• H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe

Abrégé

The present invention provides a cleaning solution for a semiconductor substrate, the cleaning solution demonstrating excellent anticorrosion performance when employed as a cleaning solution for a post-CMP semiconductor substrate that includes a tungsten-containing substance. This semiconductor substrate cleaning solution is used to clean a semiconductor substrate, and includes: a compound having one or more groups selected from the group consisting of a group represented by general formula (I) and a group represented by general formula (II); an organic acid; and an amino alcohol.

Classes IPC  ?

• C11D 17/08 - Savon liquideDétergents ou savons caractérisés par leur forme ou leurs propriétés physiques en capsules
• C11D 1/34 - Dérivés des acides du phosphore
• C11D 3/20 - Composés organiques contenant de l'oxygène
• C11D 3/26 - Composés organiques contenant de l'azote
• C11D 3/30 - AminesAmines substituées
• C11D 3/36 - Composés organiques contenant du phosphore
• C11D 3/37 - Polymères
• C11D 7/22 - Composés organiques
• C11D 7/26 - Composés organiques contenant de l'oxygène
• C11D 7/32 - Composés organiques contenant de l'azote
• H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe

Abrégé

 The present invention provides: a cleaning solution that is for a semiconductor substrate having been subjected to chemical-mechanical polishing and that has excellent cleaning capability and stability over time; and a method for cleaning a semiconductor substrate. The cleaning solution according to the present invention contains: a first amine compound which is represented by formula (1) and the conjugate acid of which has a first acid dissociation constant not less than 8.5; and a second amine compound which is at least one selected from the group consisting of primary aliphatic amines (excluding the first amine compound) having a primary amino group in the molecule, secondary aliphatic amines having a secondary amino group in the molecule, tertiary aliphatic amines having a tertiary amino group in the molecule, and compounds having a quaternary ammonium cation or quaternary ammonium compounds that are salts thereof. The mass ratio of the contained amount of the first amine compound with respect to that of the second amine compound is 1-100. The cleaning solution has pH of 6.0-12.0 at 25°C.

Classes IPC  ?

• H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
• C11D 3/20 - Composés organiques contenant de l'oxygène
• C11D 3/26 - Composés organiques contenant de l'azote
• C11D 3/28 - Composés hétérocycliques contenant de l'azote dans le cycle
• C11D 3/30 - AminesAmines substituées
• C11D 7/26 - Composés organiques contenant de l'oxygène
• C11D 7/32 - Composés organiques contenant de l'azote
• C11D 17/08 - Savon liquideDétergents ou savons caractérisés par leur forme ou leurs propriétés physiques en capsules

Abrégé

The present invention addresses the problem of providing a semiconductor substrate cleaning method that enables excellent performance in removal of polishing particles from a semiconductor substrate subjected to chemical–mechanical polishing (CMP). The present invention also addresses the problem of providing a cleaning fluid for a semiconductor substrate subjected to CMP.　This cleaning method is a semiconductor substrate cleaning method comprising a cleaning step for cleaning, using a cleaning fluid, a semiconductor substrate subjected to a CMP treatment using a polishing fluid that includes polishing particles. The semiconductor substrate includes a metal. The pH of the cleaning fluid at 25°C is over 7. The cleaning fluid includes: a chelating agent; a constituent A that is at least one selected from the group consisting of primary amines, secondary amines, and tertiary amines, and that has a first acid dissociation constant for conjugate acids of at least 8.0; and an anti-corrosive agent. The condition is met that the product of a contact angle ratio obtained by a designated test method 1 and a specific degree of aggregation obtained by a designated test method 2 is 15 or less.

Classes IPC  ?

• H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe

Abrégé

The present invention addresses the problem of providing a cleaning solution for semiconductor substrates that have been subjected to chemical-mechanical polishing, wherein the cleaning solution has an excellent cleaning performance and corrosion prevention performance for copper-containing metal films and cobalt-containing metal films. The present invention also addresses the problem of providing a method for cleaning semiconductor substrates that have been subjected to chemical-mechanical polishing.　The cleaning solution according to the present invention is for semiconductor substrates that have been subjected to chemical-mechanical polishing, and comprises a component A, which is an amino acid having one carboxyl group; a component B, which is at least one selected from the group consisting of aminopolycarboxylic acids and polyphosphonic acids; and a component C, which is an aliphatic amine (but excluding the component A, aminopolycarboxylic acids, and quaternary ammonium compounds). The mass ratio of the component B content to the component A content is 0.2-10, and the mass ratio of the component C content to the sum of the component A content and component B content is 5-100.

Classes IPC  ?

• C11D 3/26 - Composés organiques contenant de l'azote
• C11D 3/28 - Composés hétérocycliques contenant de l'azote dans le cycle
• C11D 3/34 - Composés organiques contenant du soufre
• C11D 7/32 - Composés organiques contenant de l'azote
• C11D 7/34 - Composés organiques contenant du soufre
• H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe

Abrégé

The present invention provides a cleaning liquid exhibiting excellent cleaning performance and corrosion prevention performance when used as a cleaning liquid after performing chemical-mechanical polishing on a semiconductor substrate including a cobalt-containing substance. In addition, provided is a method for cleaning a semiconductor substrate on which chemical-mechanical polishing has been performed. A cleaning liquid according to the present invention is used for a semiconductor substrate on which chemical-mechanical polishing has been performed, contains at least one amine compound Y0 selected from the group consisting of a compound Y1 represented by general formula (Y1) and a compound Y2 having a 1, 4-butanediamine skeleton, and has a pH of 8.0-11.0.

Classes IPC  ?

• C11D 17/08 - Savon liquideDétergents ou savons caractérisés par leur forme ou leurs propriétés physiques en capsules
• C11D 7/26 - Composés organiques contenant de l'oxygène
• C11D 7/32 - Composés organiques contenant de l'azote
• C11D 7/34 - Composés organiques contenant du soufre
• H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe

Abrégé

The present invention addresses the problem of providing a cleaning solution that is for a semiconductor substrate subjected to chemical-mechanical polishing and that has excellent ability to prevent corrosion of metal film and excellent ability to inhibit defects in metal film. The present invention also addresses the problem of providing a method for cleaning a semiconductor substrate that has been subjected to chemical-mechanical polishing.　The cleaning solution according to the present invention is one that is for a semiconductor substrate subjected to chemical-mechanical polishing, and that contains a compound having an amine oxide compound which is a compound having an amine oxide group or a salt thereof, and at least one hydroxylamine compound selected from the group consisting of hydroxylamines, hydroxylamine derivatives, and salts thereof. The contained amount of the amine oxide compound is 0.00001-0.15 mass% with respect to the total mass of the cleaning solution.

Classes IPC  ?

• C11D 17/08 - Savon liquideDétergents ou savons caractérisés par leur forme ou leurs propriétés physiques en capsules
• C11D 7/32 - Composés organiques contenant de l'azote
• C11D 7/36 - Composés organiques contenant du phosphore
• H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe

Abrégé

The present invention addresses the problem of providing a semiconductor substrate cleaning method that has excellent cleaning performance for a semiconductor substrate subjected to CMP and excellent corrosion protection performance for a metal film. A cleaning method according to the present invention is a semiconductor substrate cleaning method comprising a cleaning step for cleaning, using a cleaning liquid, a semiconductor substrate subjected to a chemical mechanical polishing treatment, wherein: the cleaning liquid is alkaline, is composed of a primary amine, a secondary amine, and a tertiary amine, and contains a component A, which is at least one selected from the group that does not include a compound represented by specific formula (a), and a component B, which is a compound represented by specific formula (a); the mass ratio of the content of the component (B) to the content of the component (A) is at most 0.01; and the temperature of the cleaning liquid applied to the semiconductor substrate is at least 30ºC.

Classes IPC  ?

• C11D 17/08 - Savon liquideDétergents ou savons caractérisés par leur forme ou leurs propriétés physiques en capsules
• C11D 7/32 - Composés organiques contenant de l'azote
• H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe

Abrégé

The present invention addresses the problem of providing a cleaning solution for a semiconductor substrate that has been subjected to chemical-mechanical polishing, the cleaning solution having exceptional storage stability. The present invention also addresses the problem of providing a method for cleaning a semiconductor substrate that has been subjected to chemical-mechanical polishing. The present invention is a cleaning solution for a semiconductor substrate that has been subjected to chemical-mechanical polishing, said cleaning solution containing: an amine compound that is at least one alkalinity-exhibiting amine compound selected from the group consisting of primary amines, secondary amines, tertiary amines, and salts of these amines; a chelating agent; and water. The amine compound content is at least 25.5 mass% and less than 90 mass% with respect to the total mass of the cleaning solution, and the water content is 10-60 mass% with respect to the total mass of the cleaning solution.

Classes IPC  ?

• C11D 17/08 - Savon liquideDétergents ou savons caractérisés par leur forme ou leurs propriétés physiques en capsules
• C23G 1/20 - Autres métaux lourds
• C11D 1/62 - Composés d'ammonium quaternaire
• C11D 3/26 - Composés organiques contenant de l'azote
• C11D 7/32 - Composés organiques contenant de l'azote
• H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe

Abrégé

The present invention addresses the problem of providing a cleaning liquid for a semiconductor substrate, wherein pH variation due to dilution is suppressed.　This cleaning liquid is a cleaning liquid for a semiconductor substrate and includes a chelating agent, wherein the acid dissociation constant (pKa) of the chelating agent and the pH of the cleaning liquid satisfy the condition of the following expression (A).　(A): pKa-1

Classes IPC  ?

• C11D 17/08 - Savon liquideDétergents ou savons caractérisés par leur forme ou leurs propriétés physiques en capsules
• C11D 1/22 - Esters des acides sulfoniques ou de l'acide sulfuriqueLeurs sels dérivés de composés aromatiques
• C11D 1/34 - Dérivés des acides du phosphore
• C11D 1/72 - Éthers de polyoxyalkylèneglycols
• C11D 3/20 - Composés organiques contenant de l'oxygène
• C11D 3/28 - Composés hétérocycliques contenant de l'azote dans le cycle
• C11D 3/30 - AminesAmines substituées
• C11D 3/33 - Acides aminocarboxyliques
• C11D 3/36 - Composés organiques contenant du phosphore
• C11D 7/26 - Composés organiques contenant de l'oxygène
• C11D 7/32 - Composés organiques contenant de l'azote
• C11D 7/36 - Composés organiques contenant du phosphore
• H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe

Abrégé

The present invention addresses the problem of providing a kit for a cleaning agent, which is used for the purpose of preparing a cleaning agent that maintains, even after long-term storage, adequate impurity removal performance from the surface of a semiconductor substrate that has been subjected to a CMP process. The present invention also addresses the problem of providing a method for preparing the above-described cleaning agent. A kit for a cleaning agent according to the present invention is a kit for preparing a cleaning agent which is used for cleaning of a semiconductor substrate that has been subjected to a CMP process, and which has a pH of from 7.5 to 13.0. This kit for a cleaning agent comprises a first liquid that is acidic and contains a compound represented by formula (1) and a second liquid that is alkaline and contains a basic compound; and an acidic compound is contained in at least one of the first liquid and the second liquid.

Classes IPC  ?

• H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
• C11D 7/26 - Composés organiques contenant de l'oxygène
• C11D 7/32 - Composés organiques contenant de l'azote
• C11D 17/08 - Savon liquideDétergents ou savons caractérisés par leur forme ou leurs propriétés physiques en capsules

Produits et services

Liquid photosensitive resins

Produits et services

Pigment dispersion photosensitive liquid.

Produits et services

colored, pigment dispersion photosensitive liquid for making the color filter for the liquid crystal display