A VCSEL has a semiconductor layer structure (12) which is stacked in a vertical direction and which comprises: a first mirror (14); an active region (16); and a second mirror (18), in order to form an optical cavity in which laser light is generated, the laser light being coupled out via a facet (26) of the VCSEL. The facet (26) has a first material (M1), which is a material of the semiconductor layer structure (12), and at least one layer (30) made of at least one second material (M2), said layer being arranged on parts of the first material (M1), the second material (M2) being different from the first material (M1). In a first region (I) of the facet (26) in which the second material (M2) is present, at least one first refractive index jump is formed, and in at least one second region (II) of the facet (26) which is different from the first region (I), at least one second refractive index jump is formed at least locally, the at least one second refractive index jump being different from the at least one first refractive index jump, and the facet (26) has a non-planar topography.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
A method for determining a particle distribution in a particle stream (10) using a laser apparatus (12) which has a semiconductor laser (14) that emits a laser light (16) having an inhomogeneous intensity profile (30), characterised by
receiving a light reflection (20) of the laser light (16) generated at particles (18) of the particle stream (10),
an evaluation unit (22) connected to the laser apparatus (12) evaluating a reflection signal generated by the light reflection (20) in respect of a frequency distribution of signal strength values which is generated on the basis of the intensity profile (30) when the particles (18) penetrate the laser light (16),
a processor unit determining the particle diameters of the individual particles on the basis of the signal strength values,
carrying out a diameter correction of at least some of the determined particle diameters on the basis of the sensitivity of the laser apparatus,
creating a diameter list of the frequency distribution of the particle diameters,
carrying out a frequency correction of the diameter list using a correction list,
storing the corrected diameter list on a storage medium.
A vertical-emitting semiconductor laser component includes a semiconductor material having an optical axis, a mesa for emitting light in a light emission direction, and a contact for electrically contacting the mesa. The contact has a contact opening arranged along a first direction. The optical axis is arranged along the first direction.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/42 - Réseaux de lasers à émission de surface
5.
DEVICE AND METHOD FOR DETERMINING A GLUCOSE CONCENTRATION
A device for determining a glucose concentration in an anterior chamber of a user's eye includes a VCSEL which emits laser light, and an optical element for influencing the laser light and/or an emergent light. The VCSEL and the optical element are configured such that the laser light enters the anterior chamber of the eye. The emergent light from the anterior chamber penetrates into the VCSEL. The device further includes an analysis unit that analyses a resulting self-mixing interference within the VCSEL to determine the glucose concentration.
A61B 5/145 - Mesure des caractéristiques du sang in vivo, p. ex. de la concentration des gaz dans le sang ou de la valeur du pH du sang
A61B 5/00 - Mesure servant à établir un diagnostic Identification des individus
A61B 5/1455 - Mesure des caractéristiques du sang in vivo, p. ex. de la concentration des gaz dans le sang ou de la valeur du pH du sang en utilisant des capteurs optiques, p. ex. des oxymètres à photométrie spectrale
6.
LASER ARRAY WITH LIGHT EMISSION THROUGH THE SUBSTRATE, AND METHOD FOR PRODUCING THE LASER ARRAY
The invention relates to a laser array with light emission through a substrate (12) of the laser array, said laser array comprising: a plurality of lasers (14) on the substrate, said lasers each being designed as a vertical-cavity surface emitter (VCSEL), wherein the lasers (14) each have a semiconductor layered structure comprising a first Bragg mirror (18), a second Bragg mirror (20) and an active region (22) between the first and the second Bragg mirror (18, 20), wherein the plurality of lasers (14) are grouped to form one or more mutually spaced sub-arrays (24, 26, 28) of the laser array; at least one first metal layer (40) which is situated over the first Bragg mirror (18) and makes contact with the lasers (14) of the one or more sub-arrays (24, 26, 28) on a side, facing away from the substrate (12), of the active region (22) of the lasers (14); at least one second metal layer (44) which is situated over the first Bragg mirror (18), is galvanically separate from the at least one first metal layer (40) and makes contact with the lasers (14) of the one or more subarrays (24, 26, 28) on a side, facing toward the substrate (12), of the active layer (22) through at least one opening (42) in the semiconductor layered structure, wherein the at least one opening (42) extends as far as the substrate (12) or into the substrate (12) or as far as a layer between the substrate (12) and the active region (22); an insulating layer (48) which is situated over the at least one first and second metal layer (40, 44); a third metal layer (50) which is situated over the insulating layer (48), makes contact with the at least one first metal layer (40) through first openings (51) in the insulating layer (48) and extends over regions of the at least one first metal layer (40) and over regions of the at least one second metal layer (44); and a fourth metal layer (52) which is situated over the insulating layer (48), makes contact with the at least one second metal layer (44) through second openings (53) in the insulating layer (48), is galvanically separate from the third metal layer (50) and extends over regions of the at least one first metal layer (40) and of the at least one second metal layer (44). The invention also relates to a method for producing the laser array.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/0234 - Montage à orientation inversée, p. ex. puce retournée [flip-chip], montage à côté épitaxial au-dessous ou montage à jonction au-dessous
A vertical cavity surface emitting laser (VCSEL) includes a main body having a resonator for forming a particular laser mode. The resonator has an inner Bragg mirror and a coupling-out mirror which is adjacent to an outer face of the main body, and an active layer arranged between the inner Bragg mirror and the coupling-out mirror for generating light. On the outer face, an emission region is provided that has at least two coupling-out facets positioned at locations on the outer face that match locations of intensity maxima of the particular laser mode such that the particular laser mode is stabilized. The at least two coupling-out facets have a facet reflectivity that is higher than a surface reflectivity of a remaining of the emission region. The at least two coupling-out facets have a non-circular outer contour.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
A VCSEL for emitting laser light includes a main element which has a mesa portion. The mesa portion includes a stack of different layers stacked in a stacking direction. An emission region is formed on a top surface of the mesa portion. Laser light generated in an active layer in the stack emerges from the emission region. Electrical contacts for feeding electrical energy into the active layer are provided on the main element. At least one side portion of an electrical contact of the electrical contacts is arranged on a side surface of the main element. The side surface is oriented transversely with respect to the layers.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
9.
VCSEL ARRAY WITH SUPPRESSED COHERENT COUPLING FROM OPTICAL FEEDBACK
A VCSEL array has two or more VCSELs which are arranged on a common substrate and each have an in particular identical epitaxial structure with a first distributed Bragg reflector, DBR, an active zone, and a second distributed Bragg reflector, DBR, wherein the VCSEL array is designed in such a way that the wavelengths of two of the VCSELs differ by at least 0.003 nm and at most 5 nm.
H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/42 - Réseaux de lasers à émission de surface
SEMICONDUCTOR LASER COMPONENT WITH A VERTICAL EMISSION DIRECTION FOR OPTICALLY TRANSMITTING DATA, COMPRISING A DECOUPLING FACET WITH A MODE-SELECTIVE MACROSTRUCTURE AND A POLARIZATION-SELECTIVE MICROSTRUCTURE
The invention relates to a semiconductor laser component (1) with a vertical emission direction, in particular a VCSEL, comprising an upper Bragg mirror (2) and a lower Bragg mirror (3). An active zone (4) for generating laser radiation (5) is arranged between the upper Bragg mirror (2) and the lower Bragg mirror (3), wherein the semiconductor laser component (1) with a vertical emission direction has an upper decoupling facet (20) for the laser radiation (5), and the upper decoupling facet (20) has both a mode-selective macrostructure (21) as well as a polarization-selective microstructure (22). The invention additionally relates to the use of a surface relief on a decoupling facet of a VCSEL, to a communication system, and to a method for producing a corresponding semiconductor laser component with a vertical emission direction.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/062 - Dispositions pour commander les paramètres de sortie du laser, p. ex. en agissant sur le milieu actif en faisant varier le potentiel des électrodes
A device for producing a light barrier includes a laser unit with at least one vertical cavity surface emitting laser (VCSEL), a photodiode, and a reflector. The reflector is configured to reflect light emitted by the VCSEL, such that a light reflection produced as a result is received by the photodiode, producing a detection signal, from which a direct current signal component is subtracted so that an alternating current component is provided as an evaluation signal. The evaluation signal has a higher signal-to-noise ratio than the detection signal, such that an evaluation device connected to the VCSEL is able to detect an interruption of the light reflection if no self-mixing interference is present.
G01V 8/22 - Détection, p. ex. en utilisant des barrières de lumière en utilisant plusieurs émetteurs ou récepteurs en utilisant des réflecteurs
H01S 5/026 - Composants intégrés monolithiques, p. ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
A semiconductor component for emitting light includes a main body having at least one mesa unit. The mesa unit has at least one mesa portion with an emission region arranged on a surface of the main body. The emission region includes a first mirror portion, a second mirror portion, and an active layer arranged between the first mirror portion and the second mirror portion for generating the light. The semiconductor component further includes at least one contact unit for feeding electrical energy into the active layer. The contact unit has a joining portion for externally contacting the semiconductor component, and an active contact portion extending from the joining portion to the mesa portion. The active contact portion is arranged only on one longitudinal side of the mesa unit, so that the mesa unit is not completely surrounded by the active contact portion along the surface.
A surface-emitting semiconductor laser having a vertical cavity comprises a semiconductor multi-layer structure (12) in which a trench (14) is formed, the trench running in a peripheral direction around a longitudinal center axis (16) which runs perpendicularly to the semiconductor multi-layer structure and forming a mesa (26) from the semiconductor multi-layer structure (12). The mesa (26) contains a layer (28) which is oxidized from an outer periphery of the mesa perpendicularly to the longitudinal center axis up to a predefined oxidation distance (W) in order to form in the mesa (26) an aperture (OA) for narrowing down an electrical and/or optical path. The trench (14) has, in the peripheral direction around the longitudinal center axis (16), a plurality of portions (30) in which the trench (14) is closer to the longitudinal center axis (16) than in the other portions (32) of the trench (14), the mesa (26) thus having an inner mesa region (34) and a plurality of support structures (36; 36a; 36b; 36c; 36d; 36e) which surround the inner mesa region (34), the aperture (OA) being located in the inner mesa region (34) and the support structures (36; 36a; 36b; 36c; 36d; 36e) being connected to the inner mesa region (34).
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/32 - Structure ou forme de la région activeMatériaux pour la région active comprenant des jonctions PN, p. ex. hétérostructures ou doubles hétérostructures
14.
VERTICAL CAVITY SURFACE EMITTING SEMICONDUCTOR LASER AND METHOD FOR PRODUCING SAME
The invention relates to a vertical cavity surface emitting semiconductor laser (VCSEL) which has a multi-layered semiconductor structure having an optical resonator (12) composed of semiconductor layers, the optical resonator (12) comprising a first Bragg mirror (16), a second Bragg mirror (18), and an active region (20) between the first Bragg mirror (16) and the second Bragg mirror (18) for generating laser radiation. The active region (20) has a plurality of active layers (22, 24, 40) comprising a first and at least a second active layer (22, 24), the second active layer (24) being the last active layer in front of the second Bragg mirror (18). A first oxide aperture (26) for current constriction and a first tunnel diode (30) are located between the first active layer (22) and the second active layer (24), a second oxide aperture (32) being located on a side of the second active layer (24) which is remote from the first active layer (22). A second tunnel diode (34) is located on the side of the second active layer (24) which is remote from the first active layer (22). The invention also relates to a method for producing the VCSEL.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/30 - Structure ou forme de la région activeMatériaux pour la région active
15.
ILLUMINATION DEVICE FOR ILLUMINATING A SCENE, CAMERA SYSTEM AND METHOD FOR ILLUMINATING A SCENE
An illumination device for illuminating a scene includes an array of light sources configured to emit respective light beams, a first optical unit, and a second optical unit. the first optical unit receives the light beams emitted by the light sources and directs the light beams onto the second optical unit. The first optical unit includes an imaging optical unit configured to project the light beams into the scene as spots in order to illuminate the scene with a spot pattern. The second optical unit includes an expanding optical unit configured to partly expand the light beams in order, with an expanded proportion of the light beams, to illuminate the scene simultaneously with the spot pattern with a substantially homogeneous illumination profile. The expanded proportion of the light beams amounts to less than 90% of a light intensity of the light beams emitted by the light sources.
The invention relates to a vertical cavity surface emitting laser (VCSEL) comprising: a first reflector which is connected to a first semiconductor substrate; a second reflector; and an active region having a quantum well structure for emitting light, which active region is located in series between the first reflector and the second reflector, wherein the first reflector is located in series between the first semiconductor substrate and the active region, wherein the surface of the outer face of the first semiconductor substrate, which surface is remote from the first reflector, has an orientation mark that is designed so as to clearly define the position of the vertical cavity surface emitting laser in a plane in parallel with the outer face of the first semiconductor substrate. The invention also relates to a method for producing a vertical cavity surface emitting laser according to the invention.
H01S 5/02 - Détails ou composants structurels non essentiels au fonctionnement laser
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/30 - Structure ou forme de la région activeMatériaux pour la région active
H01S 5/0238 - Mise en place des puces laser utilisant des repères
H01S 5/20 - Structure ou forme du corps semi-conducteur pour guider l'onde optique
H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs
A laser apparatus includes a vertical-emitting semiconductor laser device for emitting laser light. The vertical-emitting semiconductor laser device includes a main body having a first mirror section, a second mirror section, and an active layer arranged between the first mirror section and the second mirror section for generating the laser light. The main body has an emission region on a surface thereof for emission of the laser light. The laser apparatus further includes an optical meta-element arranged on the emission region. The optical meta-element includes an optical metamaterial for shaping the laser light. The optical meta-element is configured to emit the laser light in at least one laser mode.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
A laser device includes a semiconductor laser component. The semiconductor laser component includes a laser array. The laser array includes a plurality of semiconductor lasers emitting a laser light vertically. The laser device further includes an optics device. The optics device includes at least a second optics element, and a first optics element arranged between the second optics element and the laser array along an optical axis. The optics device is configured for expanding the laser light emitted from the semiconductor lasers, collimating the expanded laser light, and for shaping a beam profile of the collimated laser light.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/42 - Réseaux de lasers à émission de surface
A semiconductor component for emitting laser light includes a main body having at least one mesa portion with an emission region for the laser light. The emission region includes a first mirror portion, a second mirror portion, and an active portion arranged between the first mirror portion and the second mirror portion. The active portion serves to generate the laser light. The semiconductor component further includes electrical contacts for feeding electrical energy into the active portion, and a metallic polarization grating arranged on a surface of the main body on the emission region.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
The invention concerns a method for measuring a topography of a welding zone (10) in a welding process, said method comprising: generating measuring laser radiation (40; 60) in a laser cavity, emitting the generated measuring laser radiation (40; 60) to a welding zone (10) of a workpiece (11), receiving measuring laser radiation (64), reflected back by the welding zone (10), in the laser cavity, measuring self-mixing interference so as to generate a self-mixing interference signal (70), wherein the self-mixing interference is caused by superimposition of measuring laser radiation (40; 60) which has been generated and measuring laser radiation (64) which has been reflected back in the laser cavity, and processing the self-mixing interference signal (70) to determine the topography of the welding zone (10). A welding system is also described which uses said method.
A method of producing a Vertical Cavity Surface Emitting Laser, including providing a layer stack of semiconductor layers including a first mirror, a second mirror, an active region between the first and second mirrors, an Al1-xGaxAs layer with 0≤x≤0.05, and a contact layer immediately adjacent to the Al1-xGaxAs layer. The method further includes etching the layer stack to obtain a first layer sub-stack forming a mesa and a second layer sub-stack adjacent to the mesa in a stacking direction of the layer stack. Layers of the second layer sub-stack extend beyond layers of the first layer sub-stack in a direction perpendicular to the stacking direction. The Al1-xGaxAs layer is used as an etch-stop layer. The method further includes removing an outer part of the Al1-xGaxAs layer to expose, at least partly, the contact layer, and oxidizing the Al1-xGaxAs layer to obtain an oxide aperture layer.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/026 - Composants intégrés monolithiques, p. ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
A VCSEL includes a vertical resonator structure that includes a first Bragg reflector, a second Bragg reflector, and an active region, and a laser diode structure that includes a p-doped first region and an n-doped second region arranged on two sides of the active region, respectively. The vertical resonator structure further includes a tunnel diode structure having a highly n-doped first semiconductor layer and a highly p-doped second semiconductor layer. The VCSEL further includes an electrical contact arrangement having a first metal contact and a second metal contact defining a current path so that, for a voltage applied to the contact arrangement that is a reverse voltage in relation to the laser diode structure and a forward voltage in relation to the tunnel diode structure, charge carriers are conducted away from the vertical resonator structure via the tunnel diode structure into the second metal contact.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
A semiconductor component for emitting light, having a base body that has at least one mesa body with an emission region for light, the at least one mesa body being arranged on a surface of the base body and is assigned a first mirror portion, a second mirror portion, and an active layer arranged between the two mirror portions for generating the light, and having a contact unit for feeding electrical energy into the active layer, the contact unit having a joining portion for joining and/or for external contacting of the semiconductor component and an active contact portion that is arranged between the joining portion and the active layer, the at least one contact unit being arranged on a side of the base body opposite to the emission region, the joining portion at least partially covering the mesa-receiving body portion and a mesa-free body portion of the base body.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
The invention relates to a VCSEL (1) for generating laser light, comprising a base body (2) having: a cavity (3), which has a first and a second Bragg mirror (5b) arranged in a stacking direction (4), and an active layer (6) arranged between the two Bragg mirrors (5a, 5b) for generating light, wherein at least the first Bragg mirror (5a) is applied to the active layer (6) by means of a bonding process; a first and a second electrode (7a, 7b) for feeding electric current into the active layer (6) and an emission region (8) arranged on the first Bragg mirror (5a) for the emission of light from the cavity (3); a tunnel contact (9) arranged between the Bragg mirrors (5a, 5b) for limiting an activation region (10) of the active layer (6), which is acted upon by the electric current for generating the light, wherein the emission region (8) and the tunnel contact (9) are arranged along a propagation axis (11) of the light aligned parallel to the stacking direction (4), wherein in the cavity (3) at least one dissipation section (15) is provided along the propagation axis (11), which converts a portion of the light into thermal energy as it propagates through the dissipation section (15), so that the refractive index of the dissipation section (15) is modified by the heat generated thereby.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/30 - Structure ou forme de la région activeMatériaux pour la région active
H01S 5/20 - Structure ou forme du corps semi-conducteur pour guider l'onde optique
A laser device includes a semiconductor laser arrangement comprising a plurality of semiconductor lasers, and an ocular arrangement comprising a plurality of ocular units. Each ocular unit includes a stop portion of a respective semiconductor laser and an optical element. Each respective semiconductor laser corresponds to a respective ocular unit such that laser light emitted by the respective semiconductor laser and delimited by the stop portion propagates through the optical element of the respective ocular unit. A relative position of the stop portion with respect to the optical element of a first ocular unit differs from a relative position of the stop portion with respect to the optical element of at least a second ocular unit, and/or a stop portion geometry of the stop portion of the first ocular unit differs from the stop portion geometry of the stop portion of the second ocular unit.
A semiconductor component includes a main body, which includes at least one mesa body. The mesa body includes an emission region for emitting light, and an electrical contact for feeding electrical energy into an active portion of the emission region. The electrical contact includes a stress element extending up to the emission region and attached to a surface of the main body, and configured to generate a material stress in the main body. The main body further includes a polarization grating arranged on a surface of the mesa body and configured to interact with the emission region. A grating alignment of the polarization grating includes an angle of 0°, 45° or 90° with respect to a direction of a predominant material stress or a longitudinal extent of the stress element, such that the material stress and the grating alignment have an effect on a property of the emitted light.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
Proposed is a VCSEL (10) for generating laser light, comprising a main element (12), wherein the main element (12) has a first, a second and a third element portion (121, 122, 123) which are stacked one on top of the other in layers along an arrangement direction (1), wherein the element portions (121, 122, 123) are interconnected by a bonding process, wherein the first element portion (121) has a first Bragg mirror (141), the second element portion (122) has a second Bragg mirror (142), and the third element portion (123) has an active layer (16), wherein the first and the second element portion (121, 122) form a resonator (18) in which the third element portion (123) is arranged between the first and the second element portion (121, 122), wherein the first and the second element portion (121, 122) contain no indium, and the third element portion (123) contains indium, and wherein a photodetector (20), in particular in the form of a photodiode, is arranged in the resonator (18) and is preferably arranged between the second Bragg mirror (142) and the active layer (16).
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/026 - Composants intégrés monolithiques, p. ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs
H01S 5/02 - Détails ou composants structurels non essentiels au fonctionnement laser
H01S 5/30 - Structure ou forme de la région activeMatériaux pour la région active
28.
VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL), LASER SENSOR AND METHOD OF PRODUCING A VCSEL
A vertical cavity surface emitting laser includes an optical resonator, a photodiode, and an electrical contact arrangement. The optical resonator includes a semiconductor multilayer stack. The semiconductor multilayer stack includes, in a direction of growth of the multilayer stack, a first distributed Bragg reflector, a second distributed Bragg reflector, and an active region for laser emission arranged between the first distributed Bragg reflector and second distributed Bragg reflector. The electrical contact arrangement is arranged to electrically pump the optical resonator and to electrically contact the photodiode. A reflectivity of the second distributed Bragg reflectoris higher than a reflectivity of the first distributed Bragg reflector. The photodiode has an absorbing region arranged in the second distributed Bragg reflector. A tunnel junction is arranged between the photodiode and the active region.
H01S 5/026 - Composants intégrés monolithiques, p. ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/30 - Structure ou forme de la région activeMatériaux pour la région active
H01S 5/34 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
A method for identifying eye gestures of an eye includes the steps of emitting at least one laser beam onto the eye determining a single measuring sample having current values for: an optical path length of the emitted laser beam; a signal-to-noise ratio of radiation scattered back from the eye; an eye speed of the eye; and identifying an eye gesture based on the single measuring sample, wherein the optical path length is determined based on laser feedback interferometry of the emitted laser radiation with the radiation scattered back from the eye, and wherein the eye speed is determined based on a Doppler shift of the emitted radiation and the radiation scattered back, determined by means of the laser feedback interferometry.
The invention relates to a semiconductor component (10) for emitting laser light, comprising a main body (11) and, arranged on a surface (18) of the main body (11), at least one mesa body (12) comprising a superficial emission region (13) for the laser light, which is assigned a p-doped mirror portion (15), an n-doped mirror portion (16) and an active portion (17), arranged between the two mirror portions (15, 16), for generating the light within the mesa body (12), and comprising electrical contacts (24) for feeding electrical energy into the active portion (17). An outer substrate (20) comprised by the main body (11) has n-type doping. A p-doped contact layer (24) is arranged on a side of the main body opposite the substrate (20). The p-doped mirror portion (15) bears on the contact layer (24).
H01S 5/062 - Dispositions pour commander les paramètres de sortie du laser, p. ex. en agissant sur le milieu actif en faisant varier le potentiel des électrodes
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/42 - Réseaux de lasers à émission de surface
31.
METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT AND SUCH A SEMICONDUCTOR COMPONENT
A method for producing a semiconductor component for emitting light includes providing a base body, the base body comprising an active layer for generating the light and a tunnel contact, and forming a stop structure by implantation in a region of the tunnel contact. The stop structure delimits the tunnel contact and serves to constrict a current introduced into the active layer. Defects due to crystal imperfections are generated by the implantation so that the implanted region is transparent for the light having an emitted wavelength.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/02 - Détails ou composants structurels non essentiels au fonctionnement laser
H01S 5/42 - Réseaux de lasers à émission de surface
32.
SEMICONDUCTOR LASER COMPONENT WITH A VERTICAL EMISSION DIRECTION, ARRAY, AND CHIP WITH PREFERRED DIRECTION
The invention relates to a semiconductor laser component (1) with a vertical emission direction, comprising a semiconductor material and an optical axis; a mesa (2) for emitting light in a light emission direction (7); and a contact (3) for electrically contacting the mesa (2), said contact having a contact opening (4); wherein the contact opening (4) is arranged along a preferred direction (5). The invention is characterized in that the optical axis is arranged along the preferred direction (5).
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
The invention relates to a device (10) for determining a glucose concentration in the anterior chamber (12) of a user's eye (14), having a VCSEL (11) which emits laser light (16) and having an optical element (241, 242, 243, 244) for influencing the laser light (16), wherein the VCSEL (11) and the optical element (241, 242, 243, 244) are designed such that the laser light (16) enters the anterior chamber (12) of the eye, wherein emergent light (20) from the anterior chamber (12) penetrates into the VCSEL (11), and by means of an analysis unit (13) that analyses the resulting self-mixing interference within the VCSEL (11) the glucose concentration can be determined. A method for determining a glucose concentration using the device and a glasses unit having the device (10) are also disclosed.
A VCSEL (10) having a main body (12), which has a resonator (14) for forming a particular laser mode, and which has an inner Bragg mirror and a coupling-out mirror which is adjacent to an outer face (16) of the main body (12), wherein an active layer for generating light is arranged between the Bragg mirrors, wherein on the outer face (16) an emission region (20) is provided that has at least two coupling-out facets (22) which are positioned at locations on the outer face (16) that match locations of intensity maxima (19) of the laser mode such that the particular laser mode is stabilised, wherein the coupling-out facets (22) have a facet reflectivity that is higher than a surface reflectivity of the remaining emission region (20), wherein the coupling-out facets (22) do not have a circular outer contour (24).
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
Disclosed is a VCSEL (10) for emitting laser light, having a main element (12) which has a mesa portion (14) comprising a stack of different layers (19) stacked in a stacking direction (18), wherein an emission region (22) from which the laser light generated in an active layer (20) in the stack emerges is formed on the top surface (24) of the mesa portion (14), wherein electrical contacts (26) for feeding electrical energy into the active layer (20) are provided on the main element (12), wherein at least one side portion (28) of an electrical contact (26) is arranged on a side surface (30) of the main element (12), wherein the side surfaces (30) are oriented transversely with respect to the layers (19). Also disclosed are a VCSEL array (46) and a method for producing a VCSEL (10).
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
An optical arrangement of data smart glasses includes a first laser device configured to emit a projection light beam, a second laser device configured to emit a measuring light beam, a first scanner, a second scanner, and a beam combiner configured to bundle the projection light beam and the measuring light beam into a common light beam, wherein the first scanner is configured to deflect the projection light beam emitted by the first laser device in a first axis, and wherein the second scanner is configured to deflect the common light beam focused by the beam combiner in a second axis.
G02B 27/18 - Systèmes ou appareils optiques non prévus dans aucun des groupes , pour projection optique, p. ex. combinaison de miroir, de condensateur et d'objectif
G02B 27/28 - Systèmes ou appareils optiques non prévus dans aucun des groupes , pour polariser
A device (10) for producing a light barrier (12) comprising a laser unit (14) with at least one VCSEL (16) and a reflector (18), wherein the reflector (18) reflects light (20) emitted by the VCSEL (16), such that a light reflection (22) produced as a result penetrates into the VCSEL (16) and produces self-mixing interference, such that an evaluation device (23) connected to the VCSEL (16) is able to detect an interruption of the light reflection (22) if no self-mixing interference is present.
A semiconductor component (10) for emitting light comprising a main body (11), which has at least one mesa unit having at least one mesa portion comprising – arranged on a surface (18) of the main body (11) – an emission region (13) for the light, to which a first mirror portion (15), a second mirror portion (16) and – arranged between the two mirror portions – an active layer (17) for generating the light are assigned, and comprising at least one contact unit (24) for feeding electrical energy into the active layer, wherein the contact unit (24) has a joining portion (241) provided for externally contacting the semiconductor component, and an active contact portion (242) proceeding from the joining portion (241) and extending toward the mesa portion (12), wherein the active contact portion (242) is arranged only on one mesa side of the mesa unit, such that the mesa unit is not completely surrounded by the active contact portion (242) along the surface.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
The invention relates to a semiconductor component (10) for emitting light, comprising a main element (14) which has an emission region (18) for the light, the emission region being assigned a first mirror portion, a second mirror portion (24) and an active portion, arranged between the two mirror portions, for generating the light, wherein the cross section of an aperture is smaller than the cross section of an emission region.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
A method for providing a calibration number for optimizing an evaluation of a detection signal obtained from a self-mixing interference of a VCSEL (12) is proposed, including the steps of: – measuring (26) a threshold current at which the VCSEL (12) starts to emit a laser light (16), – measuring (28) a working current, at a specified power value of the laser light (16), – measuring (30) a working voltage at a specified first electric current value, – calculating the calibration number by means of a processor unit (20) from the threshold current, the working current and the working voltage.
G01S 17/32 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes continues, soit modulées en amplitude, en fréquence ou en phase, soit non modulées
A method for determining a particle distribution in a particle flow (10) using a laser apparatus (12) which has a semiconductor laser (14) that emits a laser light (16) having a non-homogenous intensity profile (30), characterised by the following steps: - a light reflection (20) of the laser light (16) generated at particles (18) of the particle flow (10) is received, - a reflection signal generated by the light reflection (20) is evaluated by an evaluation unit (22) connected to the laser apparatus (12) for a frequency distribution of signal strength values which is generated when the particles (18) penetrate the laser light (16) on the basis of the intensity profile (30), - the particle diameters of the individual particles are determined by a processor unit on the basis of the signal strength values, - diameter correction of at least some of the determined particle diameters is performed on the basis of the sensitivity of the laser apparatus, - a diameter list of the frequency distribution of the particle diameters is created, - frequency correction of the diameter list is performed using a correction list, - the corrected diameter list is stored on a storage medium.
The invention relates to a laser device (10) comprising a vertical emission semiconductor laser component (12) for emitting laser light (14) and comprising a main body (16) having a first mirror portion, a second mirror portion and an active layer (18) which is arranged between the two mirror portions and serves to generate the laser light (14), wherein the main body (16) has on its surface (20) an emission region (22) provided for the emission of the laser light (14), on which an optical meta element (24) is arranged, which comprises an optical meta material which is provided for forming the laser light (14), the meta element (24) being configured to emit the laser light in at least one laser mode.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
43.
DEVICE FOR SCANNING A FINGERTIP AND METHOD FOR SCANNING THE FINGERTIP
The invention relates to a device (10) for scanning a profile (16), formed by papillary ridges (36) and papillary troughs (38), on a fingertip (17) by means of a laser light (18) of a surface-emitting semiconductor laser (20) which is connected to an electronic apparatus (24) designed for frequency modulation of a frequency of the emitted laser light (18), said device having at least one optical element (26) which is provided on a scanning region (28) on the profile (16) in order to orient the laser light (18), wherein a light reflection, produced by the profile (16), of the laser light (18) from the scanning region (28) produces a beat signal, within the semiconductor laser (20), comprising information on the profile which can be analysed by the electronic apparatus (24). The invention also relates to a method for scanning a profile (16), formed by papillary ridges (38) and papillary troughs (38), on a fingertip (17) by means of such a device (10).
A semiconductor component (10) for emitting laser light (12) comprises a main body (14), which has at least one mesa portion (16) with an emission region (18) for the laser light (12), assigned to which are a first mirror portion (20), a second mirror portion (22) and an active portion (23) for generating the laser light (12) arranged between the two mirror portions (20, 22), and comprises electrical contacts (24) for supplying electrical energy to the active portion (23), wherein a metallic polarization grating (28) is arranged on the emission region (18) on a surface (26) of the main body (14).
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/026 - Composants intégrés monolithiques, p. ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
The invention relates to an illumination device for illuminating a scene, said illumination device comprising an array (104) of light sources (106) which are each designed to emit a light beam (108). The illumination device also has a first optical unit (110) and a second optical unit (118), wherein the first optical unit (110) receives the light beams (108) emitted by the light sources (106) and directs them towards the second optical unit (118). The first optical unit (110) is an imaging optical unit that projects the individual light beams (108) into the scene as spots (152) in order to illuminate the scene with a spot pattern, and the second optical unit (118) is an expanding optical unit that partially expands the light beams (108) in order to use the expanded portion of the light beams (108) to illuminate the scene with a substantially homogeneous illumination profile (154) simultaneously with the spot pattern. The expanded portion of the light beams (108) is less than 90% of the light intensity of the light beams (108) emitted by the light sources (106). The invention also relates to a camera system comprising such an illumination device and to a method for illuminating a scene.
G01B 11/25 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des contours ou des courbes en projetant un motif, p. ex. des franges de moiré, sur l'objet
The invention relates to a laser device (10) having a semiconductor laser component (12) comprising a laser array (14) with a plurality of semiconductor lasers (13) which emit laser light (16) vertically, and having an optics apparatus (19) comprising at least one second optics element and one first optics element (21) arranged between the second optics element (22) and the laser array (14), said optics elements being arranged along an optical axis (24), wherein the optics apparatus (19) is provided to expand the laser light (16) emitted by the semiconductor lasers (18), to collimate the laser light (16) expanded by the first optics element (21) and to shape the beam profile of the collimated laser light (16).
A VCSEL (10) comprises a vertical resonator structure (40) composed of semiconductor layers. A p-doped first region (34) is located on a first side of the active region, and an n-doped second region (30) is located on a second side of the active region opposite the first side. The resonator structure (40) also has, between the first and the second Bragg reflector (36, 22), a tunnel diode structure (26) which has a highly n-doped first semiconductor layer (26b) and a highly p-doped second semiconductor layer (26a), the highly n-doped first semiconductor layer (26b) being closer to the n-doped first region (34) than the highly p-doped second semiconductor layer (26a). The VCSEL has an electrical contact arrangement which has a first metal contact (42) and a second metal contact (44). The first and the second metal contact (42, 44) define a current path which leads through the tunnel diode structure (26) and through the laser diode structure (29) in such a way that, when a voltage which is a reverse voltage with respect to the laser diode structure (29) and which is a forward voltage with respect to the tunnel diode structure (26) is applied to the contact arrangement, charge carriers are conducted away via the tunnel diode structure (26).
H01S 5/30 - Structure ou forme de la région activeMatériaux pour la région active
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/062 - Dispositions pour commander les paramètres de sortie du laser, p. ex. en agissant sur le milieu actif en faisant varier le potentiel des électrodes
The invention relates to a semiconductor component for emitting light, having: a main body which has at least one mesa body with an emission region for the light, to which mesa body a first mirror portion, a second mirror portion and an active portion for producing the light are assigned, the active portion being arranged between the two mirror portions; and electrical contacts for feeding electrical energy into the active portion, which have at least one fan-like contact portion on a surface of the main body, which contact portion has prong-like contact protrusions extending on the surface which at least partially surround the at least one mesa body. The invention also relates to a method for producing a semiconductor component.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/42 - Réseaux de lasers à émission de surface
The invention relates to a laser device (10) comprising a semiconductor laser arrangement (12) having a plurality of semiconductor lasers (13), and an ocular arrangement (21) that has a plurality of ocular units (22), which each have an aperture section (11) of a semiconductor laser (13) and an optical element (24), wherein an individual ocular unit (22) is assigned to each of the semiconductor lasers (13), so that the laser light (16) emitted from each semiconductor laser (13) and bounded by the aperture section (11) propagates through the optical element (24) of the respectively assigned ocular unit (22), wherein a relative position of the aperture section (11) to the optical element (24) of a first ocular unit (221) differs from the relative position of the aperture section (11) to the optical element (24) of at least a second ocular unit (222), and/or an aperture section geometry of the aperture section (11) of the first ocular unit (221) differs from the aperture section geometry of the aperture section (11) of at least a second ocular unit (222).
A laser device (10) comprising a vertical emission semiconductor laser component (12) for emitting laser radiation (13) and comprising a main body (14) having a first mirror portion (16), a second mirror portion (18), and an active layer (20) which is arranged between the two mirror portions (16, 18) and serves to generate the laser radiation (13), wherein the main body (22) has an emission region (26) provided for the emission of the laser radiation (13), said emission region being provided on the surface (24) of the main body and having arranged thereon an optical deflection element (28) such that an image pattern (29) at a distance from the emission region (26) is generable, said image pattern being laterally offset from a vertical axis (30) that runs through the emission region (26).
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
A semiconductor component (10) for emitting light (12), comprising: - a main body (14), having at least one mesa body (16) with an emission region (18) for the light (12), with which mesa body a first mirror portion, a second mirror portion and an active portion for producing the light (12) are associated, the active portion being disposed between the two mirror portions; and - electrical contacts (20) for feeding electrical energy into the active portion; wherein: at least one stress element (24) extending as far as the emission region (18) is mounted on a surface (22) of the main body (14), said stress element being part of an electrical contact (20) and producing a material stress (25) in the main body (14); a polarization grating (30) is disposed on the surface (22) of the mesa body (16) and interacts with the emission region (18); a grating orientation of the polarization grating includes in particular 0°, 45° and/or 90° with a direction of a predominant material stress (25) and/or a longitudinal extent of the stress element (24), so that by the material stress and the grating orientation affect a properties, such as a polarization extinction ratio, of the emitted light (12).
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/32 - Structure ou forme de la région activeMatériaux pour la région active comprenant des jonctions PN, p. ex. hétérostructures ou doubles hétérostructures
H01S 5/42 - Réseaux de lasers à émission de surface
52.
DEVICE, SYSTEM, AND METHOD FOR BIOMETRICALLY IDENTIFYING A USER OF A DEVICE
G06V 40/18 - Caractéristiques de l’œil, p. ex. de l’iris
G06V 10/60 - Extraction de caractéristiques d’images ou de vidéos relative aux propriétés luminescentes, p. ex. utilisant un modèle de réflectance ou d’éclairage
G06V 10/774 - Génération d'ensembles de motifs de formationTraitement des caractéristiques d’images ou de vidéos dans les espaces de caractéristiquesDispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant l’intégration et la réduction de données, p. ex. analyse en composantes principales [PCA] ou analyse en composantes indépendantes [ ICA] ou cartes auto-organisatrices [SOM]Séparation aveugle de source méthodes de Bootstrap, p. ex. "bagging” ou “boosting”
53.
VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL), LASER SENSOR AND METHOD OF PRODUCING A VCSEL
A Vertical Cavity Surface Emitting Laser (VCSEL) is disclosed, comprising an optical resonator (12), a photodiode (28), and an electrical contact arrangement. The optical resonator comprises a semiconductor multilayer stack (14). The multilayer stack (14) comprises, in direction of growth of the multilayer stack (14), a first distributed Bragg reflector (20) and a second distributed Bragg reflector (26) and an active region (24) for laser emission, which is arranged between the first and second distributed Bragg reflectors (20, 26). The electrical contact arrangement is arranged to electrically pump the optical resonator (12) and to electrically contact the photodiode (28). The second distributed Bragg reflector (26) has a higher reflectivity than the first distributed Bragg reflector (20). The photodiode has an absorbing region (30) arranged in the second distributed Bragg reflector (26). A tunnel junction (42) is arranged between the photodiode (28) and the active region (24). A laser sensor comprising the VCSEL and a method of producing the VCSEL is disclosed as well.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/30 - Structure ou forme de la région activeMatériaux pour la région active
54.
VCSEL WITH INCREASED WAVELENGTH DEPENDENCE ON DRIVING CURRENT
A Vertical Cavity Surface Emitting Laser VCSEL, includes an optical resonator with a first reflector, a second reflector, and an active region for laser emission arranged between the first reflector and the second reflector and remaining regions outside of the active region, and an electrical contact arrangement configured to provide an electrical drive current to electrically pump the optical resonator. The optical resonator further comprises a loss layer introducing optical and/or electrical losses to increase wavelength shift of the laser emission when varying the drive current. If the loss layer is an optical loss layer, the optical losses introduced by the loss layer are higher than the sum of the optical losses in the remaining regions. If the loss layer is an electrical loss layer, the electrical losses introduced by the loss layer are higher by a factor of at least 5 than the electrical losses in the remaining regions.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
The present invention relates to an illumination device for a distance measurement camera, in particular a time of flight, TOF, camera system, a corresponding illumination method and a distance measurement camera system comprising said illumination device in order to improve distance measurements. The illumination device is configured to illuminate a particular region on an illumination plane with two different illumination profiles such as a first homogenous illumination profile and a second spot pattern illumination profile. The homogeneous illumination profile can enable a measurement with improved lateral resolution whereas the spot pattern illumination can enable a measurement with improved depth resolution.
A method of forming an optical aperture of a vertical cavity surface emitting laser includes the steps of providing a layer stack of semiconductor layers, the semiconductor layers including an intermediate layer comprising a semiconductor material suitable to be oxidized and oxidizing the intermediate layer to an oxidation width so as to form an oxidized outer region and a non-oxidized central region in the intermediate layer. The method also includes removing at least a part of the oxidized outer region so as to form a gap where the oxidized outer region or the part of the oxidized outer region has been removed, depositing an electrically non-conducting material on walls of the gap with a thickness smaller than a thickness of the gap, and filling a remaining void of the gap with a further material.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
57.
METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT AND SUCH A SEMICONDUCTOR COMPONENT
The invention relates to a method for producing a semiconductor component for emitting light, comprising a base body which has an active layer for generating light and a tunnel contact delimited by a screen structure, wherein the screen structure serves to constrict current introduced into the active layer, characterized by the production of the screen structure in the region of the tunnel contact by means of an implantation step. Semiconductor component having an implanted screen.
H01S 5/30 - Structure ou forme de la région activeMatériaux pour la région active
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/20 - Structure ou forme du corps semi-conducteur pour guider l'onde optique
A semiconductor component for emitting light includes a main body that comprises at least one mesa body. The mesa body has an emission region for emitting the light. The emission region is assigned a first mirror portion, a second mirror portion, and an active portion arranged between the two mirror portions and serving to produce the light. The semiconductor component further includes electrical contacts for feeding electrical energy into the active portion, with at least one stress element that is attached to a surface of the main body. The stress element is configured to generate in the main body a material stress which has an effect on one or more polarization properties of the emitted light.
H01S 5/068 - Stabilisation des paramètres de sortie du laser
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
A semiconductor device comprising an array of vertical cavity surface emitting lasers (VCSELs). The semiconductor device includes a first VCSEL having a first active area, a second VCSEL having a second active area, and a bridge connecting the first VCSEL and the second VCSEL. The first active area of the first VCSEL and the second active area of the second VCSEL are arranged along a first crystal axis. The semiconductor device further includes a blocking structure arranged between the first VCSEL and the second VCSEL. the blocking structure is configured to block a propagation of a defect between the first VCSEL and the second VCSEL along the first crystal axis.
H01S 5/42 - Réseaux de lasers à émission de surface
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
60.
METHOD OF CONTROLLING AN OPTICAL OUTPUT POWER OF A LASER DIODE, CONTROL DEVICE AND SYSTEM
A method of controlling an optical output power of a laser diode associated with a photodiode includes obtaining first optical trimming parameters indicative of a first optical output power of the laser diode at a first laser diode current and a second optical output power of the laser diode at a second laser diode current above lasing threshold. Next, second electrical trimming parameters indicative of a photodiode characteristic curve of photodiode current versus laser diode current are obtained. A first photodiode current and a second photodiode current at a laser diode currents below lasing threshold. A slope of a photodiode current versus laser diode current is determined. The optical output power of the laser diode above lasing threshold is controlled based on the first optical trimming parameters, the second electrical trimming parameters and the slope of the photodiode current versus laser diode current below lasing threshold.
A laser sensor includes a laser source configured to emit a laser beam, and optics configured to project the laser beam as a one- or two-dimensional patterned laser beam onto an object to be examined, such that a distance of the patterned laser beam from the laser source varies along the patterned laser beam projected on the object. The laser sensor further includes a detector configured to determine a self-mixing interference signal generated by laser light of the patterned laser beam reflected from the object back into the laser source, and circuitry configured to analyze a spectrum of the self-mixing interference signal and extract from the spectrum of the self-mixing interference signal multiple frequencies that are indicative of at least one of the following: multiple distances along the patterned laser beam from the laser source, or multiple velocities along the patterned laser beam with respect to the laser source.
The invention relates to a method for detecting gestures of an eye (10), having the steps of emitting at least one laser beam (1) onto the eye (10), ascertaining an individual measurement sample with current values for: an optical wavelength (2) of the emitted laser beam (1); a signal-noise ratio of radiation scattered back by the eye (10); and the speed of the eye (10); and detecting an eye gesture on the basis of the individual measurement sample, wherein the optical wavelength (2) is ascertained on the basis of a laser feedback interferometry of the emitted laser beam with the radiation scattered back by the eye (10), and the eye speed is ascertained on the basis of a Doppler effect of the emitted and back-scattered radiation, said Doppler effect being ascertained using the laser feedback interferometry.
A laser welding apparatus for welding a workpiece (202) in a welding zone (238) is described. The laser welding apparatus comprises a first clamping jaw (12) comprising an array (17) of laser diodes (20) arranged to emit laser light, and a transparent body (18) arranged to receive and transmit the laser light into the workpiece (202). The array (17) of laser diodes (20) is arranged in proximity to the transparent body (18). The transparent body (18) has a clamping surface (30) arranged to come into contact with the workpiece (202). A method of laser welding a workpiece is also disclosed.
A method of forming an optical structure in a semiconductor substrate includes applying a layer of photoresist on a surface of the semiconductor substrate, exposing the photoresist with exposure light, and subsequently developing the photoresist. After developing, a remaining layer of the photoresist has a photoresist relief profile. The method further includes etching the photoresist and the semiconductor substrate to transfer the photoresist relief profile into the semiconductor substrate to obtain the optical structure in one or more first sub-areas and a support structure in one or more second sub-areas. A thickness of the layer of the photoresist applied to the surface of the semiconductor substrate is greater than a product of a maximum height difference of a relief profile of the optical structure and a ratio between etch rates of the photoresist and of the semiconductor substrate.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A method of fabricating a Vertical Cavity Surface Emitting Laser(VCSEL) device includes providing a first structure comprising a VCSEL layer structure on a wafer. The first structure has a non-planar first structure top surface with varying height levels and includes one or more electrical contact areas. The method further includes applying one or more layers of cover material on the non-planar first structure top surface with a thickness such that a lowest height level of a cover material top surface is equal to or above the highest height level of the non-planar first structure top surface, to obtain a second structure having a second structure top surface, planarizing the second structure top surface, and producing one or more first electrical vias from the second structure top surface through the one or more layers of cover material for electrical connection to the one or more electrical contact areas.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/42 - Réseaux de lasers à émission de surface
66.
Light source, sensor and method of illuminating a scene
A light source comprises an array of Vertical Cavity Surface Emitting Lasers (VCSELs) and an optical member. The array comprises at least two sub-arrays. The sub-arrays are displaced with respect to one another along a first axis. The optical member is configured as a single optical element and configured to transform light emitted by the sub-arrays into substantially parallel illumination lines in a target area. The illumination lines are arranged along the first axis. Each illumination line has a width in a direction of the first axis and a length in a direction of a second axis perpendicular to the first axis. The width is smaller than the length. The optical member has facets in the direction of the second axis. Each facet has a size in the direction of the second axis which is smaller than a size of a sub-array in the direction of the second axis.
H01S 5/42 - Réseaux de lasers à émission de surface
G01S 7/481 - Caractéristiques de structure, p. ex. agencements d'éléments optiques
G01S 7/4865 - Mesure du temps de retard, p. ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
G01S 17/894 - Imagerie 3D avec mesure simultanée du temps de vol sur une matrice 2D de pixels récepteurs, p. ex. caméras à temps de vol ou lidar flash
The invention relates to an optical arrangement (20) for smartglasses (50), comprising a first laser device (1) configured to emit a projection light beam (11), a second laser device (2) configured to emit a measuring light beam (12), a first scanner (3), a second scanner (4), and a beam merger (5) configured to combine the projection light beam (11) and the measuring light beam (12) into a common light beam (15), the first scanner (3) being configured to deflect the projection light beam (11), which was emitted by the first laser device (1), about a first axis (30) and the second scanner (4) being configured to deflect the common light beam (15), which was combined by the beam merger (5), about a second axis (40).
The invention relates to an eye tracking arrangement that includes a camera configured to capture images of an eye at a first scanning rate, a laser velocimeter configured to capture an eye velocity of a movement of the eye by laser Doppler velocimetry at a second scanning rate and a control device configured to determine an absolute eye position based on the images, and track a gaze direction of the eye based on the absolute eye position and the eye velocity.
An optoelectronic apparatus is adapted to generate a structured light pattern. The optoelectronic apparatus has: a first array of vertical cavity surface emitting lasers (VCSELs); a first homogenization optics arrangement associated with the first array of VCSELs; a second array of VCSELs; a second homogenization optics arrangement associated with the second array of VCSELs; and a pattern optics arrangement configured to generate a structured light pattern based on a common homogeneous intensity distribution in an intermediate plane. The first homogenization optics arrangement and the second homogenization, each associated with a different one of the first array of VCSELs or the second array of VCSELs, are arranged such that their intensity distributions add up to the common homogeneous top-hat intensity distribution in the intermediate plane.
The invention is based on a sensor device (10) with at least one sensor unit (12) comprising at least one laser unit (14) for a generation of at least one laser beam (16) and comprising at least one detection unit (18) for a detection of, in particular reflected, laser beams (20), with an evaluation unit (22) which is configured to process detected laser beams (20) into at least one sensor signal (39), and with a control unit (26) which is configured, in a continuous operation state, to actuate the sensor unit (12) and the evaluation unit (22) for an operation of the sensor unit (12) and the evaluation unit (22) in alternating switch-on intervals (31, 43) and switch-off intervals (33, 45).
It is proposed that the evaluation unit (22) is configured to generate the at least one sensor signal (39) from at least two different switch-on intervals (31) of the sensor unit (12).
A diffuser lens includes a first annular lens segment and a second annular lens segment. The first and the second lens segments are concentric. A refractive index of the first and second lens segments in a cross-section along a plane including an optical axis of the diffusor lens is described by a refractive index profile which varies in a direction perpendicular to the optical axis. The refractive index profile includes a first sub-profile, which describes the refractive index profile of the first lens segment, and a second sub-profile, which describes the refractive index profile of the second lens segment. The first sub-profile transitions to the second sub-profile at an interface. These first and second sub-profiles have slopes with opposite signs.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs
73.
Laser sensor module for self-mixing interferometry
A laser sensor module includes a first laser source configured to emit first modulated light, the first modulated light being modulated laser light. The laser sensor module further includes circuitry configured to drive the first laser source with a first modulated driving current to cause the first laser source to emit the modulated laser light, a detector configured to detect the modulated laser light, which induces a photocurrent with variations resulting from modulation of the modulated laser light, and a second laser source configured to emit second modulated light. The circuitry is further configured to drive the second laser source with a second modulated driving current to cause the second laser source to emit the second modulated light. The detector is configured to detect the second modulated light. The circuitry is configured to adapt the amplitude of the second modulated driving current to induce a contribution to the photocurrent.
A laser sensor module includes a laser diode configured emit a laser beam, an electrical driver configured to supply the laser diode with a driving current to stimulate emission of the laser beam, a detector, and an optical arrangement configured to focus the laser beam to a focus region. The laser diode is arranged to emit the laser beam through the optical arrangement to the focus region. The optical arrangement comprises an emission window. The detector is arranged to determine an interference signal. The laser sensor module comprises a soiling detection unit configured to vary a wavelength of the laser beam with a variation amplitude over a predetermined time period to provide a soiling detection signal indicative of a soiling of the emission window based on an interference signal during the wavelength variation of the laser beam.
09 - Appareils et instruments scientifiques et électriques
11 - Appareils de contrôle de l'environnement
Produits et services
Data processing apparatus; chips (integrated circuits);
computer programs; computer software applications,
downloadable; semiconductors; semiconductor-based laser
diodes; optical and electronic measuring instruments;
sensors, in particular for measuring velocity and distance;
laser modules, laser systems and laser components; infrared
laser components for data transmission; vertical cavity
surface emitting lasers (VCSELs) for sensing applications;
infrared laser diodes; optically pumped semiconductor lasers
(OPSL), not for medical use. Lighting apparatus; systems for industrial heating; infrared
illumination systems and modules for security, surveillance
and night vision applications.
76.
VERTICAL CAVITY SURFACE EMITTING LASER AND METHOD OF PRODUCING SAME
A Vertical Cavity Surface Emitting Laser (VCSEL) includes a layer stack of semiconductor layers having a first layer sub-stack forming a mesa, and a second layer sub-stack adjacent to the mesa in a stacking direction. Layers of the second layer sub-stack extend beyond layers of the first sub-stack in a direction perpendicular to the stacking direction. The semiconductor layers of the layer stack form an optical resonator having a first mirror, a second mirror, an active region between the first and second mirrors for laser light generation, and an oxide aperture layer forming a current aperture. The oxide aperture layer is made from Al1-xGaxAs with 0≤x≤0.05. The oxide aperture layer is a last layer of the mesa and immediately adjacent to a first layer of the second layer sub-stack. A first layer of the second layer sub-stack is a contact layer.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
09 - Appareils et instruments scientifiques et électriques
11 - Appareils de contrôle de l'environnement
Produits et services
Data processing apparatus; integrated circuit chips for graphic cards; computer programs, downloadable and recorded, for use in the sheet metal processing and in the logistics field; computer software applications, downloadable, for use in sheet metal processing and in the logistics field; semiconductors; semiconductor-based laser diodes; optical and electronic measuring instruments for use in inspection and measurement of industrial components; sensors, in particular for measuring velocity and distance, not for medical use; laser modules in the nature of laser diodes, laser measuring and controlling systems and laser components in the nature of laser equipment for non-medical purposes; infrared laser components for data transmission, namely, infrared detectors; vertical cavity surface emitting lasers (VCSELs) for sensing applications, namely, semiconductor laser diodes; infrared laser diodes, namely, infrared sensors; optically pumped semiconductor lasers (OPSL), not for medical use Lighting apparatus, namely, lighting installations; systems for industrial heating, namely heating units for industrial purposes; infrared illumination systems and modules for security, surveillance and night vision applications comprised of infrared illuminators, infrared lamps, infrared lighting fixtures, infrared lamp fixtures, LED modules, and solar thermal modules
78.
Vertical cavity surface emitting laser with integrated photodiode
A vertical cavity surface emitting laser (VCSEL) emits laser light. The VCSEL has an optical resonator and a photodiode. The optical resonator has: a first mirror, an active region configured to generate laser light, and a second mirror. The active region is arranged between the first mirror and the second mirror. The photodiode is integrated in the optical resonator. The photodiode has: an absorption region having a plurality of absorbing layers configured to absorb the generated laser light. The absorbing layers are arranged spaced apart from one another by a distance d which satisfies the condition: d=(2k−1)λ/(4 m). Where λ is the wavelength of the laser light in the absorption region, and k and m are natural numbers ≥1.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/026 - Composants intégrés monolithiques, p. ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
A method for detecting a gaze direction of an eye includes the steps of irradiating at least one wavelength-modulated laser beam onto an eye, detecting an optical path length of the emitted laser beam based on laser feedback interferometry of the emitted laser radiation with a backscattered radiation from the eye, detecting a Doppler shift of the emitted radiation and the backscattered radiation based on the laser feedback interferometry, detecting an eye velocity based on the Doppler shift, and detecting an eye movement of the eye based on the optical path length and the eye velocity.
A method for operating smart glasses includes an input unit and/or output unit and a gaze detection arrangement, wherein the gaze detection arrangement detects any eye movement of an eye including the steps of irradiating at least one wavelength-modulated laser beam to the eye, detecting an optical path length of the emitted laser beam based on laser feedback interferometry of the emitted laser radiation with backscattered radiation from the eye, detecting a Doppler shift of the emitted and backscattered radiation based on the laser feedback interferometry, and detecting an eye velocity based on the Doppler shift, and wherein the input unit and/or output unit is operated based on the optical path length and/or the eye velocity.
The present invention relates to an illumination device (100) for a distance measurement camera (500), in particular a time of flight, TOF, camera system (500), a corresponding illumination method and a distance measurement camera system (500) comprising said illumination device (100) in order to improve distance measurements. The illumination device (100) is configured to illuminate a particular region on an illumination plane (150) with two different illumination profiles such as a first homogenous illumination profile (155a) and a second spot pattern illumination profile (155b). The homogeneous illumination profile can enable a measurement with improved lateral resolution whereas the spot pattern illumination can enable a measurement with improved depth resolution.
The present invention relates to Vertical Cavity Surface Emitting Laser (VCSEL) (10), which comprises an optical resonator (20) with a first distributed Bragg reflector (12), a second distributed Bragg reflector (16), and an active region (14) for laser emission arranged between the first distributed Bragg reflector (12) and the second distributed Bragg reflector (16). The VCSEL (10) comprises an electrical contact arrangement (32, 34) which is arranged to provide an electrical drive current to electrically pump the optical resonator (20). An additional loss layer (18) arranged in the optical resonator (20) provides optical and/or electrical losses. These additional losses increase the wavelength shift of the VCSEL (10), which wavelength shift is an important parameter for sensor applications that rely on self-mixing interference. The present invention further relates to an optical sensor comprising such a VCSEL and a fabrication method thereof.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/026 - Composants intégrés monolithiques, p. ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
H01S 5/062 - Dispositions pour commander les paramètres de sortie du laser, p. ex. en agissant sur le milieu actif en faisant varier le potentiel des électrodes
H01S 5/30 - Structure ou forme de la région activeMatériaux pour la région active
H01S 5/024 - Dispositions pour la gestion thermique
83.
METHOD OF FORMING AN OPTICAL APERTURE OF A VERTICAL CAVITY SURFACE EMITTING LASER AND VERTICAL CAVITY SURFACE EMITTING LASER
The invention relates to a method of forming an optical aperture (24) of a vertical cavity surface emitting laser (120), comprising: providing a layer stack of semiconductor layers, the semiconductor layers including an intermediate layer, wherein the intermediate layer comprises a semiconductor material suitable to be oxidized, oxidizing the intermediate layer to an oxidation width so as to form an oxidized outer region and a non-oxidized central region in the intermediate layer, removing at least a part of the oxidized outer region so that a gap is formed where the oxidized outer region or the part of the oxidized outer region has been removed, and depositing an electrically non-conducting material in the gap. The electrically non-conducting material is deposited using atomic layer deposition (ALD), wherein the electrically non-conducting material (90) is deposited on walls of the gap with a thickness which is smaller than the thickness of the gap. After deposition of the electrically non-conducting material, a remaining void of the gap is filled with a further material. A vertical cavity surface emitting laser (120) with optical aperture (24) is described as well.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
84.
Method of forming an electrical metal contact and method of producing a vertical cavity surface emitting laser
A method of forming an electrical metal contact within a semiconductor layer stack of a vertical cavity surface emitting laser includes forming a contact hole into the semiconductor layer stack. The contact hole has a bottom and a side wall extending from the bottom. The method further includes providing a photoresist mask inside the contact hole. The photoresist mask covers the side wall of the contact hole and has an opening extending to the bottom of the contact hole. The method additionally includes wet-chemical isotropic etching the bottom of the contact hole, depositing a metal on the bottom of the contact hole, and removing the photoresist mask so that the metal on the bottom of the contact hole is left as the electrical metal contact.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
A laser device includes a laser diode configured to emit radiation, an output power of the radiation being dependent on a laser diode driving current, and a photodiode configured to receive the radiation emitted by the laser diode. A photodiode current induced in the photodiode by the received radiation is dependent on a power of the received radiation. The laser device further includes circuitry configured to measure the photodiode current for a laser diode driving current and calculate a laser threshold current of the laser diode from the measured photodiode current as a measure of an actual laser threshold current of the laser diode. The circuitry is further configured to detect a malfunction or degradation of the laser diode.
H01S 5/026 - Composants intégrés monolithiques, p. ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
86.
METHOD OF CONTROLLING AN OPTICAL OUTPUT POWER OF A LASER DIODE, CONTROL DEVICE AND SYSTEM
The present invention relates to the field of optical particle sensing and in particular to a method of controlling an optical output power of a laser diode (10). A method of controlling an optical output power of a laser diode (10) is presented, wherein the laser diode is associated with a photodiode (20), wherein the photodiode converts light received from the laser diode into an electrical photodiode current; the method comprising the steps of: obtaining first optical trimming parameters indicative of a first optical output power of the laser diode (10) at a first laser diode current and a second optical output power of the laser diode at a second laser diode current different from the first laser diode current, above lasing threshold under predetermined calibration conditions; obtaining second electrical trimming parameters indicative of a photodiode characteristic curve of photodiode current versus laser diode current under the predetermined calibration conditions; measuring a first photodiode current at a third laser diode current below lasing threshold; measuring a second photodiode current at a fourth laser diode current different from the third laser diode current below lasing threshold; determining a slope of a photodiode current versus laser diode current based on said measurement of the first photodiode current and said second photodiode current below lasing threshold; controlling the optical output power of the laser diode (10) above lasing threshold based on the first optical trimming parameters, the second electrical trimming parameters and the slope of the photodiode current versus laser diode current below lasing threshold.
H01S 5/026 - Composants intégrés monolithiques, p. ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
G01N 15/02 - Recherche de la dimension ou de la distribution des dimensions des particules
87.
METHOD OF LITHOGRAPHICALLY FORMING AN OPTICAL STRUCTURE IN A SEMICONDUCTOR SUBSTRATE
A method of lithographically forming an optical structure (120) in a semiconductor substrate (102), wherein the optical structure (120) to be formed extends along one or more first sub-areas (A1) of the area of the substrate (102), comprises: providing a semiconductor substrate (102); applying a layer of photoresist (150) on an initial surface (151) of the semiconductor substrate (102); exposing the photoresist (150) with exposure light and subsequently developing the photoresist (150), wherein a dose of the exposure light varies along the area of the substrate (102) such that, after developing, the remaining layer of photoresist has a photoresist relief profile, which, in the one or more first sub-areas (A1) resembles the optical structure (120) to be formed, and, in one or more second sub-areas (A2) outside the one or more first sub-areas (A1), has a height over the initial surface (151) of the semiconductor substrate (102) which exceeds the maximum height of the remaining layer of photoresist (150) in the one or more first sub-areas (A1); etching the photoresist (150) and the semiconductor substrate (102) to transfer the photoresist relief profile into the semiconductor substrate (102) to obtain the optical structure (120) in the semiconductor substrate (102) in the one or more first sub-areas (A1) and a support structure (122) in the one or more second sub-areas (A2) of the semiconductor substrate.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
09 - Appareils et instruments scientifiques et électriques
11 - Appareils de contrôle de l'environnement
Produits et services
Data processing apparatus; chips (integrated circuits); computer programs; computer software applications, downloadable; semiconductors; semiconductor-based laser diodes; optical and electronic measuring instruments; sensors, in particular for measuring velocity and distance; laser modules, laser systems and laser components; infrared laser components for data transmission; vertical cavity surface emitting lasers (VCSELs) for sensing applications; infrared laser diodes; optically pumped semiconductor lasers (OPSL), not for medical use. Lighting apparatus; systems for industrial heating; infrared illumination systems and modules for security, surveillance and night vision applications.
89.
Laser sensor module with indication of readiness for use
A laser sensor module measures a particle density of particles with a size of less than 20 μm. The laser sensor module includes: a laser configured to emit a laser beam; a detector; and an optical arrangement. The optical arrangement is configured to focus the laser beam to a focus region. The laser is configured to emit the laser beam through the optical arrangement to the focus region. The optical arrangement has an emission window. The detector is configured to determine an interference signal of an interference of reflected laser light with emitted later light of the laser beam. The laser sensor module is configured to provide an indication signal of a soiling of the emission window based on the interference signal determined during a mechanical excitation of the emission window.
A laser arrangement includes a laser array, and an optical arrangement. The laser array includes lasers in a first pattern emitting a same laser emission profile around a first optical axis with a divergence angle θ/2. The optical arrangement has a diffusor with an array of optical elements in a second pattern, with a second optical axis, and with an illumination pattern along a first illumination axis in a field-of-view if laser light is received within a defined range smaller than or equal to a range of angles between −/+θ with respect to the second optical axis. A row of lasers parallel to the first illumination axis has a pitch p. A row of m optical elements is parallel to the first axis. Each optical element has a diameter L, and contacts its neighbor. The n lasers and the m optical elements satisfy n*p=m*L with a deviation smaller than +/−5%.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
91.
LIGHT SOURCE, SENSOR AND METHOD OF ILLUMINATING A SCENE
A light source comprises an array (20) of Vertical Cavity Surface Emitting Lasers (VCSELs) (22). The array (20) comprises at least two sub-arrays (24), each sub- array (24) comprising at least one VCSEL (22). The sub-arrays (24) are displaced with respect to one another along a first axis (y). The sub-arrays (24) are configured to individually emit light independent from light emission of the other sub-array or sub-arrays (24). The light source comprises an optical member (26) configured as a single optical element. The optical member is configured to transform light emitted by the sub-arrays (24) into substantially parallel illumination lines (14) in a target area (16). The illumination lines are arranged along the first axis (y). Each illumination line (14) has a width in direction of the first axis (y) and a length in direction of a second axis (x) perpendicular to the first axis (y), wherein the width is smaller than the length.
G01S 7/481 - Caractéristiques de structure, p. ex. agencements d'éléments optiques
G01B 11/25 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des contours ou des courbes en projetant un motif, p. ex. des franges de moiré, sur l'objet
A method reduces false-positive particle counts detected by an interference particle sensor module, which has a laser and a light detector. The method including: emitting laser light; providing a high-frequency signal during the emission of the laser light, a modulation frequency of the high-frequency signal being between 10-500 MHz; detecting an optical response by the light detector in reaction to the emitted laser light while providing the high-frequency signal, which is arranged such that a detection signal caused by a macroscopic object positioned between a first and second distance is reduced in comparison to a detection signal caused by the macroscopic object at the same position without providing the high-frequency signal. The high-frequency signal is provided to a tuning structure of the particle sensor module which is arranged to modify a resonance frequency of an optical resonator comprised by the laser sensor module upon reception of the high-frequency signal.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
93.
METHOD OF FABRICATING A VCSEL DEVICE AND VCSEL DEVICE
A method of fabricating a Vertical Cavity Surface Emitting Laser (VCSEL) device (100) comprises: providing a first structure (112) comprising a VCSEL layer structure (114) on a wafer (116), the VCSEL layer structure including the wafer comprising one or more semiconductor materials, the first structure having a non-planar first structure top surface (118) with varying height levels along the non-planar top surface, wherein the non-planar first structure top surface comprises one or more electrical contact areas (120) at different height levels above the wafer; applying one or more layers of cover material (128) different from the one or more semiconductor materials on the non-planar first structure top surface along the non-planar first structure top surface with a thickness such that a lowest height level (130) of a cover material top surface (132) is at least equal to or above the highest height level (134) of the non-planar first structure top surface, to obtain a second structure (136) comprising the first structure and the one or more layers of cover material, the second structure having a second structure top surface (138; 238;...; 738); planarizing the second structure top surface; producing one or more first electrical vias (148; 150) from the second structure top surface through the one or more layers of cover material for electrical connection to the one or more electrical contact areas.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
A VCSEL array has VCSEL sub-arrays having VCSELs on a substrate. The sub-arrays are electrically contacted by a first electrical contact arrangement common to the VCSELs within a respective sub-array and a second electrical contact arrangement. The second electrical contact arrangement has second electrical contacts contacting a respective VCSEL within the respective sub-array, individually. The second electrical contacts each has a second metal-semiconductor interface to a second semiconductor layer of an associated VCSEL. The second electrical contacts pump the VCSEL along a current path to the first electrical contact arrangement. Current paths between the first electrical contact arrangement and the second electrical contacts via the VCSELs have a symmetry selected out of the group of rotation symmetry, mirror symmetry, and translation symmetry. The first electrical contact arrangement and the second electrical contact arrangement are arranged on the same side of the substrate.
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
H01S 5/42 - Réseaux de lasers à émission de surface
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/02335 - Montage à orientation directe, p. ex. montage à côté épitaxial au-dessus ou montage à jonction au-dessus
95.
VCSEL device for an SMI sensor for recording three-dimensional pictures
A Vertical Cavity Surface Emitting Laser (VCSEL) includes a VCSEL array, a multitude of detectors, a first electrical laser contact, and at least one second electrical laser contact. The VCSEL array comprises a multitude of laser diodes, each laser diode including an optical resonator having a first distributed Bragg reflector, a second distributed Bragg reflector and an active layer for light emission, the active layer being arranged between the first distributed Bragg reflector and the second distributed Bragg reflector. The first electrical laser contact and the at least one second electrical laser contact are arranged to provide an electrical drive current to electrically pump the optical resonators of the laser diodes. Each detector is arranged to generate an electrical self-mixing interference measurement signal associated to at least one laser diode upon reception of the laser light.
H01S 5/0234 - Montage à orientation inversée, p. ex. puce retournée [flip-chip], montage à côté épitaxial au-dessous ou montage à jonction au-dessous
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
96.
Vertical cavity surface emitting laser device with integrated tunnel junction
VCSELs have a substrate, first and second electrical contacts (ECs), and an optical resonator (OR), having first and second distributed Bragg reflectors (DBRs) and an active layer between the DBRs. The first DBR is between the substrate and the active layer. One of the DBRs has: first and second parts, having different conductivity types, and each with a pair of layers with different refractive indices. A tunnel junction (TJ) is between the parts. The ECs are for electrically pumping the OR such that the TJ is reversely biased during operation of the VCSEL. Either the first DBR includes the parts, having a relative thickness of the second part to a total thickness of the first and second parts between 0.1-0.8, or the second DBR has the parts, the second part being on the TJ facing away from the active layer, and the relative thickness being between 0.15-0.6.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/026 - Composants intégrés monolithiques, p. ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs
An optoelectronic apparatus (1) and system adapted to generate a structured light pattern (70) are presented. The optoelectronic apparatus comprises an first array (10) of vertical cavity surface emitting lasers (11), VCSELs; a first homogenization optics arrangement (20) associated with the first array of vertical cavity surface emitting lasers; a second array (10) of vertical cavity surface emitting lasers (11), VCSELs; a second homogenization optics arrangement (20) associated with the second array of vertical cavity surface emitting lasers; wherein the homogenization optics arrangements, each associated with a different VCSEL array, are arranged such that their intensity distributions (63) add up to a common homogeneous top-hat intensity distribution (61) in an intermediate plane (60); and a pattern optics arrangement (30) adapted to generate a structured light pattern (70) based on the common homogeneous intensity distribution (61) in the intermediate plane (60). The present disclosure further relates to a corresponding method.
G01B 11/25 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des contours ou des courbes en projetant un motif, p. ex. des franges de moiré, sur l'objet
G02B 27/09 - Mise en forme du faisceau, p. ex. changement de la section transversale, non prévue ailleurs
The present invention relates to laser sensor module. The laser sensor module (40) comprises at least one laser diode (44), an electrical driver (46) for supplying the laser diode (44) with a driving current to emit a laser beam (48), a detector (50) and an optical arrangement (52) for focusing the laser beam (48) to a focus region (58). The laser diode (44) is arranged to emit the laser beam (48) through the optical arrangement (52) to the focus region (58), wherein the optical arrangement (52) comprises an emission window (56). The detector (50) is arranged to determine an interference signal. The laser sensor module (40) comprises a soiling detection unit (70) configured to vary a wavelength of the laser beam (48) with a variation amplitude over a predetermined time period (T) to provide a soiling detection signal indicative of a soiling (62) of the emission window (56) based on an interference signal during the wavelength variation of the laser beam (48), wherein the variation amplitude and the predetermined time period (T) are set to generate the soiling detection signal with a frequency (f) in a range from 1 kHz to 100 MHz. A device comprising the laser sensor module (40) and a method of detecting a soiling of an emission window of the laser sensor module (40) are described.
G01S 17/32 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes continues, soit modulées en amplitude, en fréquence ou en phase, soit non modulées
G01S 17/34 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes continues, soit modulées en amplitude, en fréquence ou en phase, soit non modulées utilisant la transmission d'ondes continues modulées en fréquence, tout en faisant un hétérodynage du signal reçu, ou d’un signal dérivé, avec un signal généré localement, associé au signal transmis simultanément
100.
VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, LASER LIGHT SOURCE AND METHOD OF OPERATING A LASER LIGHT SOURCE
A Vertical Cavity Surface Emitting Laser (VCSEL) device (10) comprises a one- or two- dimensional array of Vertical Cavity Surface Emitting Lasers (12, 14, 16, 18), each of the Vertical Cavity Surface Emitting Lasers (12, 14, 16, 18) comprising a first distributed Bragg reflector layer structure (22), a second distributed Bragg reflector layer structure (26) and an active region layer structure (24) arranged between the first and second distributed Bragg reflector layer structures (22, 26) for laser emission, a first electrical contact (28) and a second electrical contact (30) arranged to provide a current path between the first and second electrical contacts (28, 30) to provide a drive current to the active region layer structure (24), a phototransistor layer structure (32), wherein the phototransistor layer structure (32) is arranged such that there is an optical coupling between the active region layer structure (24) and the phototransistor layer structure (32) to provide an optically controlled first current aperture in the current path during operation of the Vertical Cavity Surface Emitting Laser (12, 14, 16, 18), a current confinement layer structure (42) configured to provide a geometrically fixed second current aperture (46) in the current path in addition to the optically controlled first current aperture. The first electrical contacts (28) of the VCSELs are electrically connected in parallel so that the VCSELs may be drive in parallel.
H01S 5/06 - Dispositions pour commander les paramètres de sortie du laser, p. ex. en agissant sur le milieu actif
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/42 - Réseaux de lasers à émission de surface
H01S 5/062 - Dispositions pour commander les paramètres de sortie du laser, p. ex. en agissant sur le milieu actif en faisant varier le potentiel des électrodes
H01S 5/065 - Accrochage de modesSuppression de modesSélection de modes
H01S 5/0683 - Stabilisation des paramètres de sortie du laser en surveillant les paramètres optiques de sortie
