The present disclosure is drawn to, among other things, a method for accessing memory using dual standby modes, the method including receiving a first standby mode indication selecting a first standby mode from a first standby mode or a second standby mode, configuring a read bias system to provide a read bias voltage and a write bias system to provide approximately no voltage, or any voltage outside the necessary range for write operation, based on the first standby mode, receiving a second standby mode indication selecting the second standby mode, and configuring the read bias system to provide at least the read bias voltage and the write bias system to provide a write bias voltage based on the second standby mode, the read bias voltage being lower than the write bias voltage.
The present disclosure is drawn to, among other things, a storage device. The storage device may include a magnetic tunnel junction (MTJ)-based storage array and a communication interface. The MTJ-based storage array may be configured to be damaged by a shorting voltage based on detection of a tamper event.
G06F 21/72 - Protection de composants spécifiques internes ou périphériques, où la protection d'un composant mène à la protection de tout le calculateur pour assurer la sécurité du calcul ou du traitement de l’information dans les circuits de cryptographie
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
H01F 10/32 - Multicouches couplées par échange de spin, p. ex. superréseaux à structure nanométrique
3.
SYSTEMS AND METHODS FOR NOR PAGE WRITE EMULATION MODE IN MEMORY DEVICE
The present disclosure is drawn to, among other things, a method of managing a magnetoresistive memory (MRAM) device. In some aspects, the method includes receiving a configuration bit from a write mode configuration register. In response to determining the configuration bit is a first value, the MRAM device is operated in a NOR emulation mode. In response to determining the configuration bit is a second value, the MRAM device is operated in a persistent memory mode.
A magnetoresistive stack may include a first electrically conductive material, a fixed region having a fixed magnetic state, a free region configured to have a first magnetic state and a second magnetic state, a dielectric layer disposed between the fixed region and the free region, a spacer region, and a cap layer disposed between the spacer region and the free region. The free region may include a layer of ferromagnetic material, an insertion layer, an iPMA layer, and/or a low saturation magnetization layer.
A magnetically free region of magnetoresistive device includes at least a first ferromagnetic region and a second ferromagnetic region separated by a non-magnetic insertion region. At least one of the first ferromagnetic region and the second ferromagnetic region may include at least a layer including boron and a non-boron magnetic material positioned proximate a boron-free ferromagnetic layer.
A scan chain circuitry for a memory device includes a first non-volatile storage bit (nvbit) configured to receive a shared control signal, a second nvbit configured to receive the shared control signal, a first flip-flop connected to the first nvbit, and a second flip-flop connected to the second nvbit and the first flip-flop. The first flip-flop enables loading a first data in (din) to the first nvbit based on a clock signal, and the second flip-flop enables loading a second din to the second nvbit based on the clock signal.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
G01R 31/3185 - Reconfiguration pour les essais, p. ex. LSSD, découpage
H03K 19/20 - Circuits logiques, c.-à-d. ayant au moins deux entrées agissant sur une sortieCircuits d'inversion caractérisés par la fonction logique, p. ex. circuits ET, OU, NI, NON
7.
METHOD OF FABRICATING A MAGNETORESISTIVE BIT FROM A MAGNETORESISTIVE STACK
A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes (a) etching through at least a portion of a thickness of the surface region to create a first set of exposed areas in the form of multiple strips extending in a first direction, and (b) etching through at least a portion of a thickness of the surface region to create a second set of exposed areas in the form of multiple strips extending in a second direction. The first set of exposed areas and the second set of exposed areas may have multiple areas that overlap. The method may also include, (c) after the etching in (a) and (b), etching through at least a portion of the thickness of the magnetoresistive stack through the first set and second set of exposed areas.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
A method for programming a configuration bit including magnetic tunnel junctions (MTJs), including during a first phase: applying a first voltage to a first leg of MTJs and a third leg of MTJs to program or inhibit the MTJs of the first leg and the third leg, and applying a second voltage to a second leg of MTJs and a fourth leg of MTJs to program or inhibit the MTJs of the second leg and the fourth leg. During a second phase: applying the second voltage to the first leg of MTJs and the third leg of MTJs to program or inhibit the MTJs of the first leg and the third leg, and applying the first voltage to the second leg of MTJs and the fourth leg of MTJs to program or inhibit the MTJs of the second leg and the fourth leg.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
9.
SYSTEMS AND METHODS FOR CONFIGURATION OF A CONFIGURATION BIT WITH A VALUE
The present disclosure is drawn to, among other things, a configuration bit including at least four resistive elements and a voltage amplifier. At least two first resistive elements may be electrically connected in series via a first electrode and at least two second resistive elements may be electrically connected in series via a second electrode. The at least two first resistive elements may be electrically connected in parallel to the at least two second resistive elements via a third electrode and a fourth electrode. The first electrode and the second electrode may be electrically connected to a voltage supply. The third electrode and the fourth electrode may be electrically connected to an input of the voltage amplifier.
H03K 19/1776 - Détails structurels des ressources de configuration pour les mémoires
G06F 21/78 - Protection de composants spécifiques internes ou périphériques, où la protection d'un composant mène à la protection de tout le calculateur pour assurer la sécurité du stockage de données
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
G11C 13/00 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage non couverts par les groupes , ou
H03K 19/17724 - Détails structurels des blocs logiques
H03K 19/17784 - Détails structurels pour l'adaptation des paramètres physiques pour la tension d'alimentation
10.
METHOD OF MANUFACTURING INTEGRATED CIRCUIT USING ENCAPSULATION DURING AN ETCH PROCESS
A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes etching through a first portion of the magnetoresistive stack using a first etch process to form one or more sidewalls. At least a portion of the sidewalls includes redeposited material after the etching. The method also includes modifying at least a portion of the redeposited material on the sidewalls, and etching through a second portion of the magnetoresistive stack after the modifying step. The magnetoresistive stack may include a first magnetic region, an intermediate region disposed over the first magnetic region, and a second magnetic region disposed over the intermediate region.
A memory includes a plurality of magnetoresistive devices, wherein each magnetoresistive device includes a fixed magnetic layer, a free magnetic layer, a tunnel barrier disposed between the fixed and free magnetic layers, and an insertion layer disposed below the free magnetic layer, wherein the fixed magnetic layer is formed above the free magnetic layer. The memory also includes a plurality of antiferromagnetic layers, wherein each antiferromagnetic layer is disposed above a seed layer. The memory further includes a spin-orbit-torque (SOT) channel, wherein the SOT channel is disposed between the plurality of magnetoresistive devices and the plurality of antiferromagnetic layers.
A memory device includes a printed circuit board, a magnetoresistive random-access memory (MRAM) device coupled to the printed circuit board, a controller or control circuitry, wherein the controller or control circuitry is integrated into, embedded in, or otherwise incorporated into the MRAM device, and a field programmable gate array (FPGA) coupled to the printed circuit board and in communication with the controller or control circuitry.
H03K 19/1776 - Détails structurels des ressources de configuration pour les mémoires
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
H01L 23/498 - Connexions électriques sur des substrats isolants
H10B 61/00 - Dispositifs de mémoire magnétique, p. ex. dispositifs RAM magnéto-résistifs [MRAM]
The present disclosure is drawn to, among other things, a method of managing a memory device. In some aspects, the method includes determining whether a first address for a page in a first memory region is mapped in a map table, setting a target address as a second address identified in the map table as being mapped to the first address, setting the target address as the first address, determining a number of bits that fail in each word of a plurality of first-layer error correction code (ECC) words for the target address, and adding the target address to the map table, writing-back contents from the target address to a repair address in the first memory region, and updating the map table by mapping the target address to the repair address.
Three bridge circuits (101, 111, 121), each include magnetoresistive sensors coupled as a Wheatstone bridge (100) to sense a magnetic field (160) in three orthogonal directions (110, 120, 130) that are set with a single pinning material deposition and bulk wafer setting procedure. One of the three bridge circuits (121) includes a first magnetoresistive sensor (141) comprising a first sensing element (122) disposed on a pinned layer (126), the first sensing element (122) having first and second edges and first and second sides, and a first flux guide (132) disposed non-parallel to the first side of the substrate and having an end that is proximate to the first edge and on the first side of the first sensing element (122). An optional second flux guide (136) may be disposed non-parallel to the first side of the substrate and having an end that is proximate to the second edge and the second side of the first sensing element (122).
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
B82Y 25/00 - Nanomagnétisme, p. ex. magnéto-impédance, magnétorésistance anisotropique, magnétorésistance géante ou magnétorésistance à effet tunnel
H10B 61/00 - Dispositifs de mémoire magnétique, p. ex. dispositifs RAM magnéto-résistifs [MRAM]
H10N 59/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comportant au moins un élément galvanomagnétique ou à effet Hall couvert par les groupes
A memory device including an array circuit including a magnetic tunnel junction (MTJ) bit having a logical state and including a set of MTJs is provided. The memory device further includes a read device electrically connected to the MTJ bit and configured to read the logical state of the MTJ bit. The memory device includes a write circuit electrically connected to the MTJ bit and configured to write the logical state of the MTJ bit. The array circuit is powered off between operations on the MTJ bit by the read device and/or the write circuit.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
A memory device includes a magnetic tunnel junction (MTJ) array having a logical state and a capacitive net charged to a first voltage and electrically connected to the MTJ array. The memory device further includes a read device electrically connected to the MTJ array and configured to read the logical state of the MTJ array as the capacitive net discharges to a second voltage different than the first voltage.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
A configuration bit includes a first set of magnetic tunnel junctions (MTJs) having a first polarity and a second set of MTJs having a second polarity opposite the first polarity. The configuration bit further includes a reading device electrically connected to the first set of MTJs and to the second set of MTJs, the reading device configured to read the first polarity of the first set of MTJs and the second polarity of the second set of the MTJs. Each MTJ in the first set of MTJs and each MTJ in the second set of MTJs is electrically connected to a spin orbit torque (SOT) channel layer configured to, when a current is applied to the SOT channel layer, control the polarities of the first set of MTJs and the second set of MTJs based on a direction of the current.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
H10B 61/00 - Dispositifs de mémoire magnétique, p. ex. dispositifs RAM magnéto-résistifs [MRAM]
18.
MAGNETIC TUNNEL JUNCTION ANTI-FUSE INCLUDING NON-MAGNETIC STACK
An antifuse device may comprise an antifuse bit including: a first non-magnetic conductive layer, an insulator above the first non-magnetic conductive layer, and a second non-magnetic conductive layer above the insulator, wherein when the insulator is disrupted, the first non-magnetic conductive layer and the second non-magnetic conductive layer permanently conduct an electrical current from one to another.
G11C 17/16 - Mémoires mortes programmables une seule foisMémoires semi-permanentes, p. ex. cartes d'information pouvant être replacées à la main dans lesquelles le contenu est déterminé en établissant, en rompant ou en modifiant sélectivement les liaisons de connexion par une modification définitive de l'état des éléments de couplage, p. ex. mémoires PROM utilisant des liaisons électriquement fusibles
H10B 20/25 - Dispositifs ROM programmable une seule fois, p. ex. utilisant des jonctions électriquement fusibles
H10B 61/00 - Dispositifs de mémoire magnétique, p. ex. dispositifs RAM magnéto-résistifs [MRAM]
A reference resistor in a magnetoresistive tunnel junction (MTJ) antifuse circuit is disclosed. The reference resistor has a variable resistance, and includes a first resistor having a first resistance, a set of second resistors each having a second resistance, and an electrical conductor layer configured to selectively electrically connect one or more second resistors in the set of second resistors to vary the variable resistance of the reference resistor.
G11C 17/16 - Mémoires mortes programmables une seule foisMémoires semi-permanentes, p. ex. cartes d'information pouvant être replacées à la main dans lesquelles le contenu est déterminé en établissant, en rompant ou en modifiant sélectivement les liaisons de connexion par une modification définitive de l'état des éléments de couplage, p. ex. mémoires PROM utilisant des liaisons électriquement fusibles
A magnetoresistive memory may include a plurality of magnetoresistive memory devices, wherein each magnetoresistive device includes a fixed magnetic region, a free magnetic region, and an intermediate region disposed between the fixed and free magnetic regions. The magnetoresistive memory may include a spin-orbit-torque (SOT) channel, wherein the SOT channel is in contact with the free magnetic regions of the plurality of magnetoresistive memory devices. The magnetoresistive memory may include a write circuit configured to apply a write current through at least one magnetoresistive memory device of the plurality of magnetoresistive memory devices and the SOT channel, wherein the write current is configured to generate a short in at least one magnetoresistive memory device as a one-time programmable read-only memory (ROM) function.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
G11C 17/16 - Mémoires mortes programmables une seule foisMémoires semi-permanentes, p. ex. cartes d'information pouvant être replacées à la main dans lesquelles le contenu est déterminé en établissant, en rompant ou en modifiant sélectivement les liaisons de connexion par une modification définitive de l'état des éléments de couplage, p. ex. mémoires PROM utilisant des liaisons électriquement fusibles
G11C 17/18 - Circuits auxiliaires, p. ex. pour l'écriture dans la mémoire
H10B 20/25 - Dispositifs ROM programmable une seule fois, p. ex. utilisant des jonctions électriquement fusibles
A device may include a set of antifuse magnetic tunnel junctions (MTJs). A device may include a trim-enable MTJ associated with the set of antifuse MTJs, wherein each of the set of antifuse MTJs and the trim-enable MTJ has a logical state, the logical state being a first logical state or a second logical state. A device may include a circuit configured to determine the logical state of each of the set of antifuse MTJs and the trim-enable MTJ, wherein the logical state of each antifuse MTJ in the set of antifuse MTJs is read when the trim-enable MTJ has the second logical state, and wherein the logical state of every antifuse MTJ in the set of antifuse MTJs is determined to be the first logical state when the trim-enable MTJ has the first logical state.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
A method of correcting one or more errors in a memory device, the method performed by one or more controllers. The method may receive data. The method may further write bits at a memory location to a first state. The method may further read respective values of the bits at the memory location. The method may further determine an error correction based on the respective values. The method may further write the received data to the memory location as received data or inverted data, based on the error correction.
G06F 11/10 - Détection ou correction d'erreur par introduction de redondance dans la représentation des données, p. ex. en utilisant des codes de contrôle en ajoutant des chiffres binaires ou des symboles particuliers aux données exprimées suivant un code, p. ex. contrôle de parité, exclusion des 9 ou des 11
26.
SYSTEMS AND METHODS FOR CONFIGURATION OF A CONFIGURATION BIT WITH A VALUE
The present disclosure is drawn to, among other things, a configuration bit including at least four resistive elements and a voltage amplifier. At least two first resistive elements may be electrically connected in series via a first electrode and at least two second resistive elements may be electrically connected in series via a second electrode. The at least two first resistive elements may be electrically connected in parallel to the at least two second resistive elements via a third electrode and a fourth electrode. The first electrode and the second electrode may be electrically connected to a voltage supply. The third electrode and the fourth electrode may be electrically connected to an input of the voltage amplifier.
H03K 19/1776 - Détails structurels des ressources de configuration pour les mémoires
G06F 21/78 - Protection de composants spécifiques internes ou périphériques, où la protection d'un composant mène à la protection de tout le calculateur pour assurer la sécurité du stockage de données
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
G11C 13/00 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage non couverts par les groupes , ou
H03K 19/17724 - Détails structurels des blocs logiques
H03K 19/17784 - Détails structurels pour l'adaptation des paramètres physiques pour la tension d'alimentation
27.
MEMORY FOR ARTIFICIAL INTELLIGENCE APPLICATION AND METHODS THEREOF
An artificial neural network device, including input circuitry configured to provide input data into a neuron, weight operation circuitry configured to input a weight value into the neuron, bias operation circuitry configured to input a bias value into the neuron, activation function circuitry configured to receive an output of the bias operation circuitry and output an activation function output; and a storage device including storage circuitry electrically connected to the weight operation circuitry, the bias operation circuitry, and the activation function circuitry, wherein the input circuitry, the weight operation circuitry, the bias operation circuitry, and the activation function circuitry are operated based on code data, and wherein the storage device includes a plurality of storage portions, each storage portion of the plurality of storage portions configured to store one or more of the code data, the input data, the weight value, the bias value, or the activation function output.
A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes etching through a first portion of the magnetoresistive stack using a first etch process to form one or more sidewalls. At least a portion of the sidewalls includes redeposited material after the etching. The method also includes modifying at least a portion of the redeposited material on the sidewalls, and etching through a second portion of the magnetoresistive stack after the modifying step. The magnetoresistive stack may include a first magnetic region, an intermediate region disposed over the first magnetic region, and a second magnetic region disposed over the intermediate region.
A magnetoresistive random-access memory (MRAM) device includes a magnetoresistive tunnel junction (MTJ) device, an electrode, and a coupling layer. The MTJ device includes a free layer, a fixed layer, and a tunnel barrier layer positioned between the free layer and the fixed layer. The coupling layer is positioned between and coupling the electrode and the MTJ device. The coupling layer includes spin Hall channel (SHC) material. The free layer, the fixed layer, and the tunnel barrier layer are stacked in a first direction to form MTJ device. The electrode is nonaligned with the MTJ device such that the electrode is spaced away from the MTJ in a second direction that is different from the first direction.
A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
Systems and techniques include identifying a network layer for performing a memory operation, identifying a subset of a plurality of configuration bit clusters of a non-volatile distributed memory that are mapped to the identified network layer using a cluster mapping, in response to identifying the subset of the plurality of configuration bit clusters, activating the subset of the plurality of configuration bit clusters, loading network component data from the subset of the plurality of configuration bit clusters into a local buffer, and applying the network component data to the network layer for performing the memory operation.
A magnetoresistive device includes a magnetically fixed region and a magnetically free region positioned on opposite sides of a tunnel barrier region. One or more transition regions, including at least a first transition region and second transition region, is positioned between the magnetically fixed region and the tunnel barrier region. The first transition region includes a non-ferromagnetic transition metal and the second transition region includes an alloy including iron and boron.
The present disclosure is drawn to a magnetoresistive device including an array of memory cells arranged in rows and columns, each memory cell comprising a magnetic tunnel junction, each row comprising a word line, and each column comprising a bit line; a column select device that selects a bit line. The magnetoresistive device also includes a sense amplifier comprising a first input corresponding to a selected bit line, a second input corresponding to a reference bit line, and a data output. The plurality of columns comprise a reference column, the reference column comprising a conductive element coupled to the magnetic tunnel junctions in the reference column.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
34.
MAGNETORESISTIVE DEVICES AND METHODS OF FABRICATING MAGNETORESISTIVE DEVICES
A method of manufacturing a magnetoresistive device may comprise providing a magnetoresistive structure comprising a bottom electrode, a magnetoresistive stack, and a top electrode. The method may include removing at least a portion of the top electrode using a first etch, where the first etch is performed in the presence of a first gas mixture. Methods of manufacturing the magnetoresistive device may include removing at least a portion of the magnetoresistive stack and the bottom electrode using a second etch, wherein the second etch is performed in the presence of a second gas mixture. The first and second gas mixture may comprise a hydrocarbon including a carbon-carbon double bond or a carbon-carbon triple bond.
The present disclosure is drawn to, among other things, an antifuse circuit. The antifuse circuit includes a plurality of antifuse bitcells and a reference resistor. Each antifuse bitcell includes two or more memory bits and a reference resistor. The two or more memory bits are configured to be in a programmed state and at least one unprogrammed state.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
H01L 23/525 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées avec des interconnexions modifiables
A memory device including a first configuration bit group including a plurality of bits, the plurality of bits including: a plurality of configuration bits; at least one redundant configuration bit; a plurality of configuration bit multiplexers each configured to receive (i) a first input from a first bit in the plurality of bits and/or a second input from a second bit in the plurality of bits and (ii) a third input from a decoder, each of the first, second, and third inputs indicating a respective logical state, wherein the logical state includes a first state or a second state; and wherein, based on the logical state of the third input received from the decoder, each configuration bit multiplexer is configured to output: the logical state of the first input from the first bit, or the logical state of the second input from the second bit.
The present disclosure is drawn to, among other things, a method for programming a memory device comprising a plurality of memory arrays. The method may include receiving a command to program one or more of the plurality of memory arrays and programming the one or more of the plurality of memory arrays based on the command. The method may optionally include erasing the one or more of the plurality of memory arrays prior to the programming.
A magnetoresistive stack, including an electrically conductive material, and a seed region disposed above the electrically conductive material and including chromium (Cr). A chromium content of the seed region is large enough to render the seed region substantially non-magnetic. The magnetoresistive stack includes a fixed magnetic region disposed above the seed region. The fixed magnetic region includes a synthetic antiferromagnetic structure including a first ferromagnetic region disposed above the seed region, a coupling layer disposed on and in contact with the first ferromagnetic region, and a second ferromagnetic region disposed on and in contact with the coupling layer. The magnetoresistive stack includes one or more dielectric layers disposed above the second ferromagnetic region, and a free magnetic region disposed above the one or more dielectric layers.
H10B 61/00 - Dispositifs de mémoire magnétique, p. ex. dispositifs RAM magnéto-résistifs [MRAM]
G11B 5/39 - Structure ou fabrication de têtes sensibles à un flux utilisant des dispositifs magnétorésistifs
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
The present disclosure is drawn to, among other things, a method of managing a magnetoresistive memory (MRAM) device. In some aspects, the method includes receiving a configuration bit from a write mode configuration register. In response to determining the configuration bit is a first value, the MRAM device is operated in a NOR emulation mode. In response to determining the configuration bit is a second value, the MRAM device is operated in a persistent memory mode.
A method of fabricating a magnetoresistive device may comprise forming an electrically conductive region and forming a first seed region on one side of the electrically conductive region. A surface of the first seed region may be treated by exposing the surface to a gas. A second seed region may be formed on the treated surface of the first seed region. The method may also comprise forming a magnetically fixed region on one side of the second seed region.
A magnetoresistive device comprises a fixed magnetic region positioned on or over a first electrically conductive region, an intermediate layer positioned on or over the fixed magnetic region, a free magnetic region positioned on or over the intermediate layer, and a metal insertion substance positioned in contact with the free magnetic region, wherein the metal insertion substance includes one or more transition metal elements.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
H01F 10/32 - Multicouches couplées par échange de spin, p. ex. superréseaux à structure nanométrique
H01F 41/32 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour appliquer un matériau conducteur, isolant ou magnétique sur une pellicule magnétique
A magnetoresistive element may include a via providing an electrical connection between one or more metal regions and magnetoresistive devices. The via may include a transition metal layer, a tantalum-rich layer, and/or a cap layer. The transition metal layer may be formed by atomic layer deposition. Additionally, one or more layers of the via may be formed in the trench etched in one or more interlevel dielectric layers. The via may have an aspect ratio less than or equal to 2. The via may have a diameter less than or equal than a diameter of the magnetoresistive device electrically connected to one or more metal regions by the via.
Aspects of the present disclosure are directed to magnetoresistive stacks including regions having increased height-to-diameter ratios. Exemplary magnetoresistive stacks (for example, used in a magnetic tunnel junction (MTJ) magnetoresistive device) of the present disclosure include one or more multilayer synthetic antiferromagnetic structures (SAFs) or synthetic ferromagnetic structures (SyFs) in order to promote stability of the SAF or SyF, e.g., for smaller-sized MTJs.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
H10B 61/00 - Dispositifs de mémoire magnétique, p. ex. dispositifs RAM magnéto-résistifs [MRAM]
1. The present disclosure is drawn to, among other things, a method for accessing memory using dual standby modes, the method including receiving a first standby mode indication selecting a first standby mode from a first standby mode or a second standby mode, configuring a read bias system to provide a read bias voltage and a write bias system to provide approximately no voltage, or any voltage outside the necessary range for write operation, based on the first standby mode, receiving a second standby mode indication selecting the second standby mode, and configuring the read bias system to provide at least the read bias voltage and the write bias system to provide a write bias voltage based on the second standby mode, the read bias voltage being lower than the write bias voltage.
Various means for improvement in signal-to-noise ratio (SNR) for a magnetic field sensor are disclosed for low power and high resolution magnetic sensing. The improvements may be done by reducing parasitic effects, increasing sense element packing density, interleaving a Z-axis layout to reduce a subtractive effect, and optimizing an alignment between a Z-axis sense element and a flux guide, etc.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
Spin-orbit-torque (SOT) segments are provided along the sides of free layers in magnetoresistive devices that include magnetic tunnel junctions. Current flowing through such SOT segments injects spin current into the free layers such that spin torque is applied to the free layers. The spin torque can be used as an assist to spin-transfer torque generated by current flowing vertically through the magnetic tunnel junction in order to improve the efficiency of the switching current applied to the magnetoresistive device.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
H01F 10/32 - Multicouches couplées par échange de spin, p. ex. superréseaux à structure nanométrique
H10B 61/00 - Dispositifs de mémoire magnétique, p. ex. dispositifs RAM magnéto-résistifs [MRAM]
A scan chain circuitry for a memory device includes a first non-volatile storage bit (nvbit) configured to receive a shared control signal, a second nvbit configured to receive the shared control signal, a first flip-flop connected to the first nvbit, and a second flip-flop connected to the second nvbit and the first flip-flop. The first flip-flop enables loading a first data in (din) to the first nvbit based on a clock signal, and the second flip-flop enables loading a second din to the second nvbit based on the clock signal.
G01R 31/3185 - Reconfiguration pour les essais, p. ex. LSSD, découpage
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
H03K 19/20 - Circuits logiques, c.-à-d. ayant au moins deux entrées agissant sur une sortieCircuits d'inversion caractérisés par la fonction logique, p. ex. circuits ET, OU, NI, NON
48.
SYSTEMS AND METHODS FOR HIGH OXIDATION TIME TO SUPPRESS BIT ERROR RATE
A magnetoresistive stack may include a fixed magnetic region, where the fixed magnetic region may include a reference layer, an interfacial layer disposed above the reference layer, an intermediate layer disposed above the interfacial layer, and a free magnetic region disposed above the intermediate layer. The interfacial layer may include cobalt (Co).
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
H10B 61/00 - Dispositifs de mémoire magnétique, p. ex. dispositifs RAM magnéto-résistifs [MRAM]
A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes etching through a first portion of the magnetoresistive stack using a first etch process to form one or more sidewalls. At least a portion of the sidewalls includes redeposited material after the etching. The method also includes modifying at least a portion of the redeposited material on the sidewalls, and etching through a second portion of the magnetoresistive stack after the modifying step. The magnetoresistive stack may include a first magnetic region, an intermediate region disposed over the first magnetic region, and a second magnetic region disposed over the intermediate region.
A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.
B82Y 25/00 - Nanomagnétisme, p. ex. magnéto-impédance, magnétorésistance anisotropique, magnétorésistance géante ou magnétorésistance à effet tunnel
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H10B 61/00 - Dispositifs de mémoire magnétique, p. ex. dispositifs RAM magnéto-résistifs [MRAM]
H10N 59/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comportant au moins un élément galvanomagnétique ou à effet Hall couvert par les groupes
51.
Method of fabricating a magnetoresistive bit from a magnetoresistive stack
A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes (a) etching through at least a portion of a thickness of the surface region to create a first set of exposed areas in the form of multiple strips extending in a first direction, and (b) etching through at least a portion of a thickness of the surface region to create a second set of exposed areas in the form of multiple strips extending in a second direction. The first set of exposed areas and the second set of exposed areas may have multiple areas that overlap. The method may also include, (c) after the etching in (a) and (b), etching through at least a portion of the thickness of the magnetoresistive stack through the first set and second set of exposed areas.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
The present disclosure is drawn to, among other things, a method of managing a memory device. In some aspects, the method includes determining whether a first address for a page in a first memory region is mapped in a map table, setting a target address as a second address identified in the map table as being mapped to the first address, setting the target address as the first address, determining a number of bits that fail in each word of a plurality of first-layer error correction code (ECC) words for the target address, and adding the target address to the map table, writing-back contents from the target address to a repair address in the first memory region, and updating the map table by mapping the target address to the repair address.
A method of manufacturing a magnetoresistive stack/structure comprising (a) etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer, (b) depositing a first encapsulation layer on the sidewalls of the second magnetic region and over a surface of the dielectric layer, (c) thereafter: (i) etching the first encapsulation layer which is disposed over the dielectric layer using a first etch process, and (ii) etching re-deposited material using a second etch process, wherein, after such etching, a portion of the first encapsulation layer remains on the sidewalls of the second magnetic region, (d) etching (i) through the dielectric layer to form a tunnel barrier and provide sidewalls thereof and (ii) etching the first magnetic region to provide sidewalls thereof, and (e) depositing a second encapsulation layer on the sidewalls of the tunnel barrier and first magnetic region.
A memory device includes a printed circuit board, a magnetoresistive random-access memory (MRAM) device coupled to the printed circuit board, a controller or control circuitry, wherein the controller or control circuitry is integrated into, embedded in, or otherwise incorporated into the MRAM device, and a field programmable gate array (FPGA) coupled to the printed circuit board and in communication with the controller or control circuitry.
H03K 19/1776 - Détails structurels des ressources de configuration pour les mémoires
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
H01L 23/498 - Connexions électriques sur des substrats isolants
H10B 61/00 - Dispositifs de mémoire magnétique, p. ex. dispositifs RAM magnéto-résistifs [MRAM]
The present disclosure is drawn to, among other things, a method of managing a magnetoresistive memory (MRAM) device. In some aspects, the method includes receiving a configuration bit from a write mode configuration register. In response to determining the configuration bit is a first value, the MRAM device is operated in a NOR emulation mode. In response to determining the configuration bit is a second value, the MRAM device is operated in a persistent memory mode.
A magnetically free region of magnetoresistive device includes at least a first ferromagnetic region and a second ferromagnetic region separated by a non-magnetic insertion region. At least one of the first ferromagnetic region and the second ferromagnetic region may include at least a boron-rich ferromagnetic layer positioned proximate a boron-free ferromagnetic layer.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
H10B 61/00 - Dispositifs de mémoire magnétique, p. ex. dispositifs RAM magnéto-résistifs [MRAM]
The present disclosure is drawn to, among other things, a configuration bit including at least four resistive elements and a voltage amplifier. At least two first resistive elements may be electrically connected in series via a first electrode and at least two second resistive elements may be electrically connected in series via a second electrode. The at least two first resistive elements may be electrically connected in parallel to the at least two second resistive elements via a third electrode and a fourth electrode. The first electrode and the second electrode may be electrically connected to a voltage supply. The third electrode and the fourth electrode may be electrically connected to an input of the voltage amplifier.
H03K 19/1776 - Détails structurels des ressources de configuration pour les mémoires
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
G11C 13/00 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage non couverts par les groupes , ou
H03K 19/17724 - Détails structurels des blocs logiques
H03K 19/17784 - Détails structurels pour l'adaptation des paramètres physiques pour la tension d'alimentation
G06F 21/78 - Protection de composants spécifiques internes ou périphériques, où la protection d'un composant mène à la protection de tout le calculateur pour assurer la sécurité du stockage de données
58.
Magnetoresistive stack/structure and methods therefor
The present disclosure is drawn to, among other things, a magnetoresistive device and a magnetoresistive memory comprising a plurality of such magnetoresistive devices. In some aspects, a magnetoresistive device may include a magnetically fixed region, a magnetically free region above or below the magnetically fixed region, and an intermediate region positioned between the magnetically fixed region and the magnetically free region, wherein the intermediate region includes a first dielectric material. The magnetoresistive device may also include encapsulation layers formed on opposing side walls of the magnetically free region, wherein the encapsulation layers include the first dielectric material.
The present disclosure is drawn to, among other things, a method for programming a memory device comprising a plurality of memory arrays. The method may include receiving a command to program one or more of the plurality of memory arrays and programming the one or more of the plurality of memory arrays based on the command. The method may optionally include erasing the one or more of the plurality of memory arrays prior to the programming.
The present disclosure is drawn to, among other things, a device comprising input circuitry; weight operation circuitry electrically connected to the input circuitry; bias operation circuitry electrically connected to the weight operation circuitry; storage circuitry electrically connected to the weight operation circuitry and the bias operation circuitry; and activation function circuitry electrically connected to the bias operation circuitry, wherein at least the weight operation circuitry, the bias operation circuitry, and the storage circuitry are located on a same chip.
G06N 3/063 - Réalisation physique, c.-à-d. mise en œuvre matérielle de réseaux neuronaux, de neurones ou de parties de neurone utilisant des moyens électroniques
G11C 11/54 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments simulateurs de cellules biologiques, p. ex. neurone
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
61.
Low resistance MTJ antifuse circuitry designs and methods of operation
The present disclosure is drawn to, among other things, an antifuse circuit. The antifuse circuit includes a plurality of antifuse bitcells and a reference resistor. Each antifuse bitcell includes two or more memory bits and a reference resistor. The two or more memory bits are configured to be in a programmed state and at least one unprogrammed state.
G11C 11/00 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
H01L 23/525 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées avec des interconnexions modifiables
A magnetoresistive stack may include a first electrically conductive material, a fixed region having a fixed magnetic state, a free region configured to have a first magnetic state and a second magnetic state, a dielectric layer disposed between the fixed region and the free region, a spacer region, and a cap layer disposed between the spacer region and the free region. The free region may include a layer of ferromagnetic material, an insertion layer, an iPMA layer, and/or a low saturation magnetization layer.
H01L 43/02 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails
H01L 27/22 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun utilisant des effets de champ magnétique analogues
The present disclosure is drawn to a magnetoresistive device including an array of memory cells arranged in rows and columns, each memory cell comprising a magnetic tunnel junction, each row comprising a word line, and each column comprising a bit line; a column select device that selects a bit line. The magnetoresistive device also includes a sense amplifier comprising a first input corresponding to a selected bit line, a second input corresponding to a reference bit line, and a data output. The plurality of columns comprise a reference column, the reference column comprising a conductive element coupled to the magnetic tunnel junctions in the reference column.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
Various means for improvement in signal-to-noise ratio (SNR) for a magnetic field sensor are disclosed for low power and high resolution magnetic sensing. The improvements may be done by reducing parasitic effects, increasing sense element packing density, interleaving a Z-axis layout to reduce a subtractive effect, and optimizing an alignment between a Z-axis sense element and a flux guide, etc.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
65.
Systems and methods for dual standby modes in memory
1. The present disclosure is drawn to, among other things, a method for accessing memory using dual standby modes, the method including receiving a first standby mode indication selecting a first standby mode from a first standby mode or a second standby mode, configuring a read bias system to provide a read bias voltage and a write bias system to provide approximately no voltage, or any voltage outside the necessary range for write operation, based on the first standby mode, receiving a second standby mode indication selecting the second standby mode, and configuring the read bias system to provide at least the read bias voltage and the write bias system to provide a write bias voltage based on the second standby mode, the read bias voltage being lower than the write bias voltage.
The present disclosure is drawn to, among other things, a method for accessing memory using dual standby modes, the method including receiving a first standby mode indication selecting a first standby mode from a first standby mode or a second standby mode, configuring a read bias system to provide a read bias voltage and a write bias system to provide approximately no voltage, or any voltage outside the necessary range for write operation, based on the first standby mode, receiving a second standby mode indication selecting the second standby mode, and configuring the read bias system to provide at least the read bias voltage and the write bias system to provide a write bias voltage based on the second standby mode, the read bias voltage being lower than the write bias voltage.
A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).
H10B 61/00 - Dispositifs de mémoire magnétique, p. ex. dispositifs RAM magnéto-résistifs [MRAM]
G11B 5/39 - Structure ou fabrication de têtes sensibles à un flux utilisant des dispositifs magnétorésistifs
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
A method of manufacturing one or more interconnects to magnetoresistive structure comprising (i) depositing a first conductive material in a via; (2) etching the first conductive material wherein, after etching the first conductive material a portion of the first conductive material remains in the via, (3) partially filling the via by depositing a second conductive material in the via and directly on the first conductive material in the via; (4) depositing a first electrode material in the via and directly on the second conductive material in the via; (5) polishing a first surface of the first electrode material wherein, after polishing, the first electrode material is (i) on the second conductive material in the via and (ii) over the portion of the first conductive material remaining in the via; and (6) forming a magnetoresistive structure over the first electrode material.
The present disclosure is drawn to, among other things, a method for accessing memory using dual standby modes, the method including receiving a first standby mode indication selecting a first standby mode from a first standby mode or a second standby mode, configuring a read bias system to provide a read bias voltage and a write bias system to provide approximately no voltage, or any voltage outside the necessary range for write operation, based on the first standby mode, receiving a second standby mode indication selecting the second standby mode, and configuring the read bias system to provide at least the read bias voltage and the write bias system to provide a write bias voltage based on the second standby mode, the read bias voltage being lower than the write bias voltage.
Magnetoresistive device architectures and methods for manufacturing are presented that facilitate integration of process steps associated with forming such devices into standard process flows used for surrounding logic/circuitry. In some embodiments, the magnetoresistive device structures are designed such that the devices are able to fit within the vertical dimensions of the integrated circuit associated with a single metal layer and a single layer of interlayer dielectric material. Integrating the processing for the magnetoresistive devices can include using the same standard interlayer dielectric material as used in the surrounding circuits on the integrated circuit as well as using standard vias to interconnect to at least one of the electrodes of the magnetoresistive devices.
H01L 29/82 - Types de dispositifs semi-conducteurs commandés par la variation du champ magnétique appliqué au dispositif
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
H01L 43/00 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
H10B 61/00 - Dispositifs de mémoire magnétique, p. ex. dispositifs RAM magnéto-résistifs [MRAM]
A method of manufacturing a magnetoresistive device may comprise forming a first magnetic region, an intermediate region, and a second magnetic region of a magnetoresistive stack above a via; removing at least a portion of the second magnetic region using a first etch; removing at least a portion of the intermediate region and at least a portion of the first magnetic region using a second etch; removing at least a portion of material redeposited on the magnetoresistive stack using a third etch; and rendering at least a portion of the redeposited material remaining on the magnetoresistive stack electrically non-conductive.
A magnetoresistive stack may include: a fixed region having a fixed magnetic state, a spacer region, a first dielectric layer and a second dielectric layer, where both the first dielectric layer and the second dielectric layer are between the fixed region and the spacer region, and a free region between the first dielectric layer and the second dielectric layer. The free region may be configured to have a first magnetic state and a second magnetic state. The free region may include an interface layer, a multilayer structure, an insertion layer (e.g., a metallized insertion layer), one or more ferromagnetic layers (e.g., metallized ferromagnetic layers), and/or a transition layer (e.g., a metallized transition layer).
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
H01F 10/32 - Multicouches couplées par échange de spin, p. ex. superréseaux à structure nanométrique
H10B 61/00 - Dispositifs de mémoire magnétique, p. ex. dispositifs RAM magnéto-résistifs [MRAM]
Three bridge circuits (101, 111, 121), each include magnetoresistive sensors coupled as a Wheatstone bridge (100) to sense a magnetic field (160) in three orthogonal directions (110, 120, 130) that are set with a single pinning material deposition and bulk wafer setting procedure. One of the three bridge circuits (121) includes a first magnetoresistive sensor (141) comprising a first sensing element (122) disposed on a pinned layer (126), the first sensing element (122) having first and second edges and first and second sides, and a first flux guide (132) disposed non-parallel to the first side of the substrate and having an end that is proximate to the first edge and on the first side of the first sensing element (122). An optional second flux guide (136) may be disposed non-parallel to the first side of the substrate and having an end that is proximate to the second edge and the second side of the first sensing element (122).
G01R 33/02 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques
H01L 27/22 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun utilisant des effets de champ magnétique analogues
B82Y 25/00 - Nanomagnétisme, p. ex. magnéto-impédance, magnétorésistance anisotropique, magnétorésistance géante ou magnétorésistance à effet tunnel
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H01L 43/08 - Résistances commandées par un champ magnétique
74.
Systems and methods for configuration of a configuration bit with a value
The present disclosure is drawn to, among other things, a configuration bit including at least four resistive elements and a voltage amplifier. At least two first resistive elements may be electrically connected in series via a first electrode and at least two second resistive elements may be electrically connected in series via a second electrode. The at least two first resistive elements may be electrically connected in parallel to the at least two second resistive elements via a third electrode and a fourth electrode. The first electrode and the second electrode may be electrically connected to a voltage supply. The third electrode and the fourth electrode may be electrically connected to an input of the voltage amplifier.
H03K 19/1776 - Détails structurels des ressources de configuration pour les mémoires
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
G11C 13/00 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage non couverts par les groupes , ou
H03K 19/17784 - Détails structurels pour l'adaptation des paramètres physiques pour la tension d'alimentation
H03K 19/17724 - Détails structurels des blocs logiques
G06F 21/78 - Protection de composants spécifiques internes ou périphériques, où la protection d'un composant mène à la protection de tout le calculateur pour assurer la sécurité du stockage de données
The present disclosure is drawn to, among other things, a storage device. The storage device may include a magnetic tunnel junction (MTJ)-based storage array and a communication interface. The MTJ-based storage array may be configured to be damaged by a shorting voltage based on detection of a tamper event.
G06F 21/00 - Dispositions de sécurité pour protéger les calculateurs, leurs composants, les programmes ou les données contre une activité non autorisée
G06F 21/72 - Protection de composants spécifiques internes ou périphériques, où la protection d'un composant mène à la protection de tout le calculateur pour assurer la sécurité du calcul ou du traitement de l’information dans les circuits de cryptographie
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
H01F 10/32 - Multicouches couplées par échange de spin, p. ex. superréseaux à structure nanométrique
76.
METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICES
A method of manufacturing an integrated circuit device comprises forming a layer of barrier material on a surface, where the surface includes interlayer dielectric and a feature of a metal layer. The method may also include forming a layer of contact material above the layer of barrier material. The method may further include removing a portion of the layer of barrier material and a portion of the layer of contact material to form a via. Additionally, the method may include depositing magnetoresistive stack above, and in contact with, the via, where a width of the magnetoresistive stack is greater than or equal to a width of the via.
H01L 43/12 - Procédés ou appareils spécialement adaptés à la fabrication ou le traitement de ces dispositifs ou de leurs parties constitutives
H01L 27/22 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun utilisant des effets de champ magnétique analogues
H01L 43/02 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails
H01L 43/08 - Résistances commandées par un champ magnétique
77.
Systems and methods for NOR page write emulation mode in serial STT-MRAM
The present disclosure is drawn to, among other things, a method of managing a magnetoresistive memory (MRAM) device. In some aspects, the method includes receiving a configuration bit from a write mode configuration register. In response to determining the configuration bit is a first value, the MRAM device is operated in a NOR emulation mode. In response to determining the configuration bit is a second value, the MRAM device is operated in a persistent memory mode.
A chopping technique, and associated structure, is implemented to cancel the magnetic 1/f noise contribution in a Tunneling Magnetoresistance (TMR) field sensor. The TMR field sensor includes a first bridge circuit including multiple TMR elements to sense a magnetic field and a second circuit to apply a bipolar current pulse adjacent to each TMR element. The current lines are serially or sequentially connected to a current source to receive the bipolar current pulse. The field sensor has an output including a high output and a low output in response to the bipolar pulse. This asymmetric response allows a chopping technique for 1/f noise reduction in the field sensor.
G01R 31/00 - Dispositions pour tester les propriétés électriquesDispositions pour la localisation des pannes électriquesDispositions pour tests électriques caractérisées par ce qui est testé, non prévues ailleurs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/06 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques
Spin-orbit-torque (SOT) segments are provided along the sides of free layers in magnetoresistive devices that include magnetic tunnel junctions. Current flowing through such SOT segments injects spin current into the free layers such that spin torque is applied to the free layers. The spin torque can be used as an assist to spin-transfer torque generated by current flowing vertically through the magnetic tunnel junction in order to improve the efficiency of the switching current applied to the magnetoresistive device.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
H01F 10/32 - Multicouches couplées par échange de spin, p. ex. superréseaux à structure nanométrique
H10B 61/00 - Dispositifs de mémoire magnétique, p. ex. dispositifs RAM magnéto-résistifs [MRAM]
A method of manufacturing a magnetoresistive device may comprise forming a first magnetic region, an intermediate region, and a second magnetic region of a magnetoresistive stack above a via; removing at least a portion of the second magnetic region using a first etch; removing at least a portion of the intermediate region and at least a portion of the first magnetic region using a second etch; removing at least a portion of material redeposited on the magnetoresistive stack using a third etch; and rendering at least a portion of the redeposited material remaining on the magnetoresistive stack electrically non-conductive.
H01L 43/14 - Procédés ou appareils spécialement adaptés à la fabrication ou le traitement de ces dispositifs ou de leurs parties constitutives pour dispositifs à effet Hall
H01L 27/22 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun utilisant des effets de champ magnétique analogues
H01L 43/04 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails de dispositifs à effet Hall
The present disclosure is drawn to a magnetoresistive device including an array of memory cells arranged in rows and columns, each memory cell comprising a magnetic tunnel junction, each row comprising a word line, and each column comprising a bit line; a column select device that selects a bit line. The magnetoresistive device also includes a sense amplifier comprising a first input corresponding to a selected bit line, a second input corresponding to a reference bit line, and a data output. The plurality of columns comprise a reference column, the reference column comprising a conductive element coupled to the magnetic tunnel junctions in the reference column.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
82.
MAGNETORESISTIVE DEVICES AND METHODS OF FABRICATING SUCH DEVICES
An integrated circuit (IC) device includes a logic portion including logic circuits in multiple vertically stacked metal layers interconnected by one or more via layers, and a memory portion with a plurality of magnetoresistive devices. Each magnetoresistive device is provided in a single metal layer of the multiple vertically stacked metal layers of the IC device.
H01L 43/08 - Résistances commandées par un champ magnétique
H01L 27/22 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun utilisant des effets de champ magnétique analogues
H01L 43/02 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails
H01L 43/12 - Procédés ou appareils spécialement adaptés à la fabrication ou le traitement de ces dispositifs ou de leurs parties constitutives
83.
Systems and methods for monitoring and managing memory devices
The present disclosure is drawn to, among other things, a method of managing a memory device. In some aspects, the method includes determining whether a first address for a page in a first memory region is mapped in a map table, setting a target address as a second address identified in the map table as being mapped to the first address, setting the target address as the first address, determining a number of bits that fail in each word of a plurality of first-layer error correction code (ECC) words for the target address, and adding the target address to the map table, writing-back contents from the target address to a repair address in the first memory region, and updating the map table by mapping the target address to the repair address.
The present disclosure is drawn to, among other things, a method of managing a memory device. In some aspects, the method includes determining whether a first address for a page in a first memory region is mapped in a map table, setting a target address as a second address identified in the map table as being mapped to the first address, setting the target address as the first address, determining a number of bits that fail in each word of a plurality of first-layer error correction code (ECC) words for the target address, and adding the target address to the map table, writing-back contents from the target address to a repair address in the first memory region, and updating the map table by mapping the target address to the repair address.
A magnetoresistive device comprises a fixed magnetic region positioned on or over a first electrically conductive region, an intermediate layer positioned on or over the fixed magnetic region, a free magnetic region positioned on or over the intermediate layer, and a metal insertion substance positioned in contact with the free magnetic region, wherein the metal insertion substance includes one or more transition metal elements.
H01L 43/02 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
H01F 10/32 - Multicouches couplées par échange de spin, p. ex. superréseaux à structure nanométrique
H01F 41/32 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour appliquer un matériau conducteur, isolant ou magnétique sur une pellicule magnétique
A method of manufacturing a magnetoresistive stack/structure comprising (a) etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer, (b) depositing a first encapsulation layer on the sidewalls of the second magnetic region and over a surface of the dielectric layer, (c) thereafter: (i) etching the first encapsulation layer which is disposed over the dielectric layer using a first etch process, and (ii) etching re-deposited material using a second etch process, wherein, after such etching, a portion of the first encapsulation layer remains on the sidewalls of the second magnetic region, (d) etching (i) through the dielectric layer to form a tunnel barrier and provide sidewalls thereof and (ii) etching the first magnetic region to provide sidewalls thereof, and (e) depositing a second encapsulation layer on the sidewalls of the tunnel barrier and first magnetic region.
A magnetoresistive structure having two dielectric layers, and method of manufacturing same, includes a free magnetic layer positioned between the two dielectric layers. The method of manufacture comprises at least two etch processes and at least one encapsulation process interposed therebetween wherein the encapsulation is formed on sidewalls of the partially formed magnetoresistive stack between etch processes. For example, an exemplary method of manufacturing a magnetoresistive device includes etching through a second electrode, second dielectric layer and free magnetic layer to provide a sidewall of (i) an unpinned synthetic antiferromagnetic structure, (ii) a second dielectric layer and (iii) a free magnetic layer; thereafter, forming an encapsulation material on the sidewall of the unpinned synthetic antiferromagnetic structure, second dielectric layer and free magnetic layer, and after forming the encapsulation material, etching through a first dielectric layer.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
Aspects of the present disclosure are directed to magnetoresistive stacks including regions having increased height-to-diameter ratios. Exemplary magnetoresistive stacks—for example, used in a magnetic tunnel junction (MTJ) magnetoresistive device—of the present disclosure include one or more multilayer synthetic antiferromagnetic structures—SAFs—or synthetic ferromagnetic structures—SyFs—(A) in order to promote stability of the SAF or SyF, e.g., for smaller-sized MTJs (200).
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
H10B 61/00 - Dispositifs de mémoire magnétique, p. ex. dispositifs RAM magnéto-résistifs [MRAM]
Aspects of the present disclosure are directed to magnetic tunnel junction (MTJ) structures comprising multiple MTJ bits connected in series. For example, a magnetic tunnel junction (MTJ) stack according to the present disclosure may include at least a first MTJ bit and a second MTJ bit stacked above the first MTJ bit, and a resistance state of the MTJ stack may be read by passing a single read current through both the first MTJ bit and the second MTJ bit.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
H01L 27/22 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun utilisant des effets de champ magnétique analogues
H01L 43/02 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails
H01L 43/12 - Procédés ou appareils spécialement adaptés à la fabrication ou le traitement de ces dispositifs ou de leurs parties constitutives
A magnetoresistive stack includes a fixed magnetic region, one or more dielectric layers disposed on and in contact with the fixed magnetic region, and a free magnetic region disposed above the one or mom dielectric layers. The fixed magnetic region may include a first ferromagnetic region, a coupling layer, a second ferromagnetic region, a transition layer disposed, a reference layer, and at least one interfacial layer disposed above the second ferromagnetic region. Another interfacial layer may be disposed between the one or more dielectric layers and the free magnetic region.
A method of fabricating a magnetoresistive device may comprise forming an electrically conductive region and forming a first seed region on one side of the electrically conductive region. A surface of the first seed region may be treated by exposing the surface to a gas. A second seed region may be formed on the treated surface of the first seed region. The method may also comprise forming a magnetically fixed region on one side of the second seed region.
Fabrication of a magnetic memory element, including a via (125) in an interlevel dielectric layer (120), providing an electrical connection between an underlying metal region (110) and a magnetoresistive stack device, such as a magnetic tunnel junction (150), involves forming a transition metal layer (130) in the via by atomic layer deposition. The via optionally includes a tantalum-rich layer (140) above, and/or a cap layer (115) below, the transition metal layer, and may have a diameter less than or equal than a diameter of the magnetoresistive stack device.
A magnetoresistive device includes a magnetically fixed region and a magnetically free region positioned on opposite sides of a tunnel barrier region. One or more transition regions, including at least a first transition region and second transition region, is positioned between the magnetically fixed region and the tunnel barrier region. The first transition region includes a non-ferromagnetic transition metal and the second transition region includes an alloy including iron and boron.
A method of manufacturing one or more interconnects to magnetoresistive structure comprising (i) depositing a first conductive material in a via; (2) etching the first conductive material wherein, after etching the first conductive material a portion of the first conductive material remains in the via, (3) partially filling the via by depositing a second conductive material in the via and directly on the first conductive material in the via; (4) depositing a first electrode material in the via and directly on the second conductive material in the via; (5) polishing a first surface of the first electrode material wherein, after polishing, the first electrode material is (i) on the second conductive material in the via and (ii) over the portion of the first conductive material remaining in the via; and (6) forming a magnetoresistive structure over the first electrode material.
H01L 43/12 - Procédés ou appareils spécialement adaptés à la fabrication ou le traitement de ces dispositifs ou de leurs parties constitutives
H01L 27/22 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun utilisant des effets de champ magnétique analogues
H01L 43/08 - Résistances commandées par un champ magnétique
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 21/285 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un gaz ou d'une vapeur, p. ex. condensation
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
H01L 43/02 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails
A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.
B82Y 25/00 - Nanomagnétisme, p. ex. magnéto-impédance, magnétorésistance anisotropique, magnétorésistance géante ou magnétorésistance à effet tunnel
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H10B 61/00 - Dispositifs de mémoire magnétique, p. ex. dispositifs RAM magnéto-résistifs [MRAM]
H10N 59/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comportant au moins un élément galvanomagnétique ou à effet Hall couvert par les groupes
A magnetoresistive device may include one or more electrodes or electrically conductive lines and a fixed region and a free region disposed between the electrodes or electrically conductive lines. The fixed region may have a fixed magnetic state and the free region may be configured to have a first magnetic state and a second magnetic state. The free region may store a first value when in the first magnetic state and store a second value when in the second magnetic state. The magnetoresistive device may further include a dielectric layer between the free region and the fixed region and a spin-Hall (SH) material proximate to at least a portion of the free region. An insertion layer may be disposed between the SH material and the free region.
H01L 43/08 - Résistances commandées par un champ magnétique
H01L 43/02 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails
A magnetoresistive device may include one or more electrodes or electrically conductive lines and a fixed region and a free region disposed between the electrodes or electrically conductive lines. The fixed region may have a fixed magnetic state and the free region may be configured to have a first magnetic state and a second magnetic state. The free region may store a first value when in the first magnetic state and store a second value when in the second magnetic state. The magnetoresistive device may further include a dielectric layer between the free region and the fixed region and a spin-Hall (SH) material proximate to at least a portion of the free region. An insertion layer may be disposed between the SH material and the free region.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
H01L 27/22 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun utilisant des effets de champ magnétique analogues
H01L 43/02 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails
H01L 43/08 - Résistances commandées par un champ magnétique
The magnetoresistive stack or structure of a magnetoresistive device includes one or more electrodes or electrically conductive lines, a magnetically fixed region, a magnetically free region disposed between the electrodes or electrically conductive lines, and a dielectric layer disposed between the free and fixed regions. The magnetoresistive device may further include a spin-Hall (SH) material proximate to at least a portion of the free region, and one or more insertion layers comprising antiferromagnetic material.
H01L 43/00 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
The magnetoresistive stack or structure of a magnetoresistive device includes one or more electrodes or electrically conductive lines, a magnetically fixed region, a magnetically free region disposed between the electrodes or electrically conductive lines, and a dielectric layer disposed between the free and fixed regions. The magnetoresistive device may further include a spin-Hall (SH) material proximate to at least a portion of the free region, and one or more insertion layers comprising antiferromagnetic material.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
H01L 27/22 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun utilisant des effets de champ magnétique analogues
H01L 43/08 - Résistances commandées par un champ magnétique
H01L 43/12 - Procédés ou appareils spécialement adaptés à la fabrication ou le traitement de ces dispositifs ou de leurs parties constitutives
H01L 43/02 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails
100.
Bipolar chopping for 1/f noise and offset reduction in magnetic field sensors
A chopping technique, and associated structure, is implemented to cancel the magnetic 1/f noise contribution in a Tunneling Magnetoresistance (TMR) field sensor. The TMR field sensor includes a first bridge circuit including multiple TMR elements to sense a magnetic field and a second circuit to apply a bipolar current pulse adjacent to each TMR element. The current lines are serially or sequentially connected to a current source to receive the bipolar current pulse. The field sensor has an output including a high output and a low output in response to the bipolar pulse. This asymmetric response allows a chopping technique for 1/f noise reduction in the field sensor.
G01R 31/00 - Dispositions pour tester les propriétés électriquesDispositions pour la localisation des pannes électriquesDispositions pour tests électriques caractérisées par ce qui est testé, non prévues ailleurs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/06 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques
