The present invention relates to a composition for selectively etching metal film containing silver (Ag), and a method for producing the same, which can selectively etch the single film of silver (Ag) or a silver alloy, or a multilayer film containing the metal film and an indium oxide film, while preventing damage to an underlying film, residue, and staining.
C23F 1/30 - Compositions acides pour les autres matériaux métalliques
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
2.
ETCHANT COMPOSITION FOR INDIUM OXIDE FILM OR SILVER-CONTAINING METAL FILM AND METHOD FOR PREPARING THE SAME
An etchant composition is disclosed that provides selective etching of an indium oxide film or a sliver-containing metal layer. The etchant composition includes nitric acid, an organic acid, a sulfur compound, and a tin compound. The organic acid does not include the elements of sulfur and tin. The sulfur compound does not include the element of tin. The etchant composition may minimize the damage of a lower metal film and may exhibit excellent etching characteristics in terms of etching rate, bias, residue, precipitation, and etching uniformity.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
The present disclosure relates to an etching composition for a silicon nitride layer, and the etching composition for a silicon nitride layer has a significantly excellent etching selectivity for a silicon nitride layer as compared to a silicon oxide layer, prevent abnormal growth of the silicon oxide layer, suppresses particle generation affecting characteristics of a semiconductor device, and has an excellent effect of a significantly small generation height of bubbles.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
4.
STRIPPER COMPOSITION AND METHOD FOR FORMING PATTERN USING THE SAME
Provided is a stripper composition and a method for forming a pattern using the same. The stripper composition includes, in set content ranges, an amine compound, a glycol compound, an aprotic polar solvent excluding N-methyl-2-pyrrolidone and N-methylformamide, and a first corrosion inhibitor represented by Formula 1. The stripper composition according to an embodiment may be used in a process of removing a photoresist pattern formed on a lower film, and may supply characteristics of an excellent stripping power for photoresist and prevention or reduction of damage of the lower film.
The present invention relates to a method for manufacturing a functional polymer by an anionic polymerization method. The method for manufacturing a polymer according to the present invention can economically manufacture a polymer having high chemical uniformity, and enables an anionic polymerization reaction even at a relatively high temperature compared to the prior art.
C08F 297/02 - Composés macromoléculaires obtenus en polymérisant successivement des systèmes différents de monomère utilisant un catalyseur de type ionique ou du type de coordination sans désactivation du polymère intermédiaire utilisant un catalyseur du type anionique
The present invention relates to a method for manufacturing functional polymers by anionic polymerization. The polymer manufacturing method according to the present invention can economically produce polymers having high chemical uniformity and enables an anionic polymerization reaction even at a relatively high temperature compared with the prior art.
C08F 2/01 - Procédés de polymérisation caractérisés par des éléments particuliers des appareils de polymérisation utilisés
C08F 4/48 - MétauxHydrures métalliquesComposés organiques de métalLeur utilisation comme précurseurs de catalyseurs choisis parmi les métaux légers, le zinc, le cadmium, le mercure, le cuivre, l'argent, l'or, le bore, le gallium, l'indium, le thallium, les terres rares ou les actinides choisis parmi les métaux alcalins choisis parmi le lithium, le rubidium, le césium ou le francium
C08F 112/14 - Monomères ne contenant qu'un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
B01J 19/00 - Procédés chimiques, physiques ou physico-chimiques en généralAppareils appropriés
The present invention relates to a method for manufacturing functional polymers by anionic polymerization. The polymer manufacturing method according to the present invention can economically produce polymers having high chemical uniformity and enables an anionic polymerization reaction even at a relatively high temperature compared with the prior art.
C08F 112/14 - Monomères ne contenant qu'un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
B01J 19/00 - Procédés chimiques, physiques ou physico-chimiques en généralAppareils appropriés
The present invention relates to a method for manufacturing functional polymers by anionic polymerization. The polymer manufacturing method according to the present invention can economically produce polymers having high chemical uniformity.
C08F 112/14 - Monomères ne contenant qu'un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
B01J 19/00 - Procédés chimiques, physiques ou physico-chimiques en généralAppareils appropriés
The present invention relates to a method for producing a functional polymer via anionic polymerization. The method for producing a polymer according to the present invention can economically produce a polymer having high chemical uniformity and enables an anionic polymerization reaction even at a relatively high temperature compared to the prior art.
C08F 2/01 - Procédés de polymérisation caractérisés par des éléments particuliers des appareils de polymérisation utilisés
C08F 4/48 - MétauxHydrures métalliquesComposés organiques de métalLeur utilisation comme précurseurs de catalyseurs choisis parmi les métaux légers, le zinc, le cadmium, le mercure, le cuivre, l'argent, l'or, le bore, le gallium, l'indium, le thallium, les terres rares ou les actinides choisis parmi les métaux alcalins choisis parmi le lithium, le rubidium, le césium ou le francium
C08F 112/14 - Monomères ne contenant qu'un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
B01J 19/00 - Procédés chimiques, physiques ou physico-chimiques en généralAppareils appropriés
The present invention relates to a method for manufacturing a functional polymer by anionic polymerization. The method for preparing a polymer according to the present invention can economically manufacture a polymer having high chemical uniformity, and enables an anionic polymerization reaction even at a relatively high temperature compared to the prior art.
C08F 2/01 - Procédés de polymérisation caractérisés par des éléments particuliers des appareils de polymérisation utilisés
C08F 4/48 - MétauxHydrures métalliquesComposés organiques de métalLeur utilisation comme précurseurs de catalyseurs choisis parmi les métaux légers, le zinc, le cadmium, le mercure, le cuivre, l'argent, l'or, le bore, le gallium, l'indium, le thallium, les terres rares ou les actinides choisis parmi les métaux alcalins choisis parmi le lithium, le rubidium, le césium ou le francium
C08F 112/14 - Monomères ne contenant qu'un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
B01J 19/00 - Procédés chimiques, physiques ou physico-chimiques en généralAppareils appropriés
The present invention relates to a method for preparing a functional polymer by using anionic polymerization. The method for preparing a polymer according to the present invention can economically prepare a polymer having high chemical uniformity, and enables an anionic polymerization reaction even at a relatively high temperature compared to that of a conventional method.
C08F 2/01 - Procédés de polymérisation caractérisés par des éléments particuliers des appareils de polymérisation utilisés
C08F 4/48 - MétauxHydrures métalliquesComposés organiques de métalLeur utilisation comme précurseurs de catalyseurs choisis parmi les métaux légers, le zinc, le cadmium, le mercure, le cuivre, l'argent, l'or, le bore, le gallium, l'indium, le thallium, les terres rares ou les actinides choisis parmi les métaux alcalins choisis parmi le lithium, le rubidium, le césium ou le francium
C08F 112/14 - Monomères ne contenant qu'un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
B01J 19/00 - Procédés chimiques, physiques ou physico-chimiques en généralAppareils appropriés
The present invention relates to a method for manufacturing functional polymers by anionic polymerization. The polymer manufacturing method according to the present invention can economically produce polymers having high chemical uniformity and enables an anionic polymerization reaction even at a relatively high temperature compared with the prior art.
C08F 2/01 - Procédés de polymérisation caractérisés par des éléments particuliers des appareils de polymérisation utilisés
C08F 4/48 - MétauxHydrures métalliquesComposés organiques de métalLeur utilisation comme précurseurs de catalyseurs choisis parmi les métaux légers, le zinc, le cadmium, le mercure, le cuivre, l'argent, l'or, le bore, le gallium, l'indium, le thallium, les terres rares ou les actinides choisis parmi les métaux alcalins choisis parmi le lithium, le rubidium, le césium ou le francium
C08F 112/14 - Monomères ne contenant qu'un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
B01J 19/00 - Procédés chimiques, physiques ou physico-chimiques en généralAppareils appropriés
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
Produits et services
Business advisory services relating to catalysts for manufacturing industrial chemicals; Export agency services for the goods of others; Sales promotion for others for industrial chemicals and artificial resins, unprocessed; Wholesale distributorships featuring alcohol; Business advisory services relating to surface coating chemicals for OLED (organic light-emitting diode) display panels; Wholesale distributorships featuring surface coating chemicals for OLED (organic light-emitting diode) display panels; Sales promotion for others for industrial chemicals and adhesives; Retail store services featuring surface coating chemicals for plasma display panel (PDP) televisions; Wholesale distributorships featuring chemical raw materials for use in semiconductor thin film deposition for manufacturing semiconductor devices; Purchasing agents for surface coating chemicals for plasma display panel (PDP) televisions; Purchasing agents for dopants for use in manufacturing semiconductors; Retail store services featuring industrial chemicals and artificial resins, unprocessed; Wholesale distributorships featuring surface coating chemicals for plasma display panel (PDP) televisions; Retail store services featuring catalysts for manufacturing industrial chemicals; Purchasing agents for chemical raw materials for use in semiconductor thin film deposition for manufacturing semiconductor devices; Retail store services featuring alcohol; Purchasing agents for industrial chemicals; Retail store services featuring surface coating chemicals for LCD panels; Sales promotion for others for surface coating chemicals for plasma display panel (PDP) televisions; Industrial chemicals sales promotion for others; Business advisory services relating to surface coating chemicals for LCD panels; Business advisory services relating to biotechnology reagents; Purchasing agents for industrial chemicals and adhesives; Wholesale distributorships featuring biotechnology reagents; Retail store services featuring industrial chemicals; Retail store services featuring chemicals for use in biotechnological manufacturing processes; Business advisory services relating to chemical raw materials for use in semiconductor thin film deposition for manufacturing semiconductor devices; Wholesale distributorships featuring dopants for use in manufacturing semiconductors; Retail store services featuring dopants for use in manufacturing semiconductors; Wholesale distributorships featuring industrial chemicals; Wholesale distributorships featuring catalysts for manufacturing industrial chemicals; Business advisory and consultancy services relating to import-export agencies; Import agency services in the field of biotechnology reagents; Business advisory services relating to dopants for use in manufacturing semiconductors; Business advisory services relating to surface coating chemicals for plasma display panel (PDP) televisions; Purchasing agents for surface coating chemicals for OLED (organic light-emitting diode) display panels; Business advisory services relating to industrial chemicals; Wholesale distributorships featuring for industrial chemicals and adhesives; Business advisory services for industrial chemicals and adhesives; Goods import-export agencies; Purchasing agents for catalysts for manufacturing industrial chemicals; Sales promotion for others for surface coating chemicals for LCD panels; Retail store services featuring chemicals for processing X-ray films; Wholesale distributorships featuring for industrial chemicals and artificial resins, unprocessed; Business advisory services for industrial chemicals and artificial resins, unprocessed; Alcohol purchasing agents; Import-export agencies in the field of energy; Retail store services featuring surface coating chemicals for OLED (organic light-emitting diode) display panels; Wholesale distributorships featuring chemicals for use in biotechnological manufacturing processes; Sales promotion for others for surface coating chemicals for OLED (organic light-emitting diode) display panels; Wholesale distributorships featuring surface coating chemicals for LCD panels; Purchasing agents for chemicals for processing X-ray films; Purchasing agents for industrial chemicals and artificial resins, unprocessed; Retail store services featuring biotechnology reagents; Alcohol sales promotion for others; Purchasing agents for surface coating chemicals for LCD panels; Sales promotion for others in the field of catalysts for manufacturing industrial chemicals; Retail store services featuring industrial chemicals and adhesives; Retail store services featuring chemical raw materials for use in semiconductor thin film deposition for manufacturing semiconductor devices; Sales promotion for others for chemical raw materials for use in semiconductor thin film deposition for manufacturing semiconductor devices; Business advisory services relating to alcohol; Biotechnology reagent sales promotion for others; Sales promotion for others in the field of dopants for use in manufacturing semiconductors Hydrofluoric acid; Polymethyl methacrylate resin for manufacturing electronic parts; Synthetic resins, unprocessed; Chemicals, namely, photosensitizer for use in the manufacture of semiconductor circuit devices; Chemicals, namely, photo initiators for use in the manufacture of semiconductors, display panels and electronics parts; chemicals for use in manufacturing secondary batteries; Acrylic resins, unprocessed; Artificial resins, unprocessed; high purity chemical reagents for non-medical purposes for use in the electronic industry; Caustic soda for industrial purposes; Industrial chemicals in the form of polymerization monomer; Chemical fluorine compound; Catalyst for use in the manufacture of semiconductor circuit devices; Battery electrolytes solution for use in the manufacture of batteries; Battery electrolytes; chemicals for cathode materials for secondary batteries; Chemicals for use in life science biotechnological product development; Chemicals for use in biotechnological manufacturing processes; Unprocessed polyester resin for manufacturing electronic parts; Plastics, unprocessed; organic mineral acids; Chemicals used in industry for manufacturing electronic parts; Chemical preparations for use in industry; Etchants for use in the manufacture of semiconductors, display panels and electronic parts; Chemicals, namely, photographic sensitizers for use in the manufacture of semiconductors, display panels and electronic parts; Epoxy resins, unprocessed; Chemicals for manufacturing batteries; Industrial chemicals for use in manufacturing electronic parts; Industrial chemicals in the form of monomers for the production of plastic lenses; Biological preparations for use in biotechnology industry and science; Chemicals, namely, developers for semiconductor circuit devices; ammonia water; Industrial chemicals for pigment dispersion
14.
Etchant composition for silicon layer and etching method using the same
Provided is an etchant composition for a silicon layer including: a fluoride-based compound; a nitrate-based compound; an acid mixture including a phosphoric acid-based inorganic acid and an organic acid; and a nitrosyl compound and capable of selectively etching the silicon layer with respect to a silicon oxide layer.
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
The present invention relates to a composition for selectively etching silicon on a surface on which a silicon oxide film (SiO2) and silicon (Si) are exposed. According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface.
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
16.
CLEANING AGENT COMPOSITION FOR SUBSTRATE FOR SEMICONDUCTOR DEVICES AND METHOD FOR CLEANING SUBSTRATE FOR SEMICONDUCTOR DEVICES USING THE SAME
The present disclosure relates to a cleaning agent composition for a substrate for a semiconductor device and a method for cleaning a substrate for a semiconductor device using the same. The cleaning agent composition contains a silicon-based compound represented by Formula 1 and an aprotic organic solvent with a dielectric constant of 10 or less, which can form a surface protective film capable of preventing collapse of the pattern even in a wet cleaning process of fine patterns with high aspect ratios, thereby providing a method for manufacturing a semiconductor device with an improved semiconductor manufacturing yield.
Provided are an etchant composition of a titanium layer and a method using the same, which may selectively etch the titanium layer without affecting the quality of other layers during a process of manufacturing a semiconductor and a display device, and thus, may increase productivity and reliability with improved etching characteristics in a semiconductor manufacturing process.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
C09K 13/02 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un hydroxyde d'un métal alcalin
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
18.
Etchant composition for titanium-containing metal layer and etching method using the same
Provided are an etchant composition for a titanium-containing metal layer, and a method using the same, which may selectively etch the titanium-containing metal layer without affecting the quality of other films during a process of manufacturing semiconductor and display devices, and thus, may increase productivity and reliability with improved etching characteristics in a semiconductor manufacturing process.
C23F 1/40 - Compositions alcalines pour les autres matériaux métalliques
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/3205 - Dépôt de couches non isolantes, p. ex. conductrices ou résistives, sur des couches isolantesPost-traitement de ces couches
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
The present invention relates to a composition for selectively etching silicon on a surface on which a metal film and silicon (Si) are exposed.
The present invention relates to a composition for selectively etching silicon on a surface on which a metal film and silicon (Si) are exposed.
According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface on which the metal film and silicon are exposed.
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
An etchant composition is disclosed that provides selective etching of an indium oxide film or a sliver-containing metal layer. The etchant composition includes nitric acid, an organic acid, a sulfur compound, and a tin compound. The organic acid does not include the elements of sulfur and tin. The sulfur compound does not include the element of tin. The etchant composition may minimize the damage of a lower metal film and may exhibit excellent etching characteristics in terms of etching rate, bias, residue, precipitation, and etching uniformity.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
The present invention relates to a composition for treating a semiconductor substrate, and particularly to a composition for treating an edge portion of a wafer coated with polysilazane.
The present invention relates to a composition for treating a semiconductor substrate, and particularly to a composition for treating an edge portion of a wafer coated with polysilazane.
According to the composition for treating a semiconductor substrate according to the present invention, it is possible to uniformly maintain the quality of the composition in terms of management and to uniformly treat the boundary of the wafer in terms of processing. In addition, by improving the straightness of the boundary portion where polysilazane is removed, it is possible to significantly reduce the defect rate of the product and to stably improve the productivity yield.
The present invention relates to a composition for selectively etching silicon on a surface on which a metal film and silicon (Si) are exposed.
The present invention relates to a composition for selectively etching silicon on a surface on which a metal film and silicon (Si) are exposed.
According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface on which the metal film and silicon are exposed.
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
The present invention relates to a composition for selectively etching silicon on a surface on which a metal film and silicon (Si) are exposed.
The present invention relates to a composition for selectively etching silicon on a surface on which a metal film and silicon (Si) are exposed.
According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface on which the metal film and silicon are exposed.
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
The present invention relates to a stripper composition for removing a photoresist in a process of manufacturing a semiconductor device.
The present invention relates to a stripper composition for removing a photoresist in a process of manufacturing a semiconductor device.
According to the present invention, it is possible to prevent corrosion of the underlying film while improving the peeling force for the photoresist, and to improve the stability of the composition over time.
C09K 13/00 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage
C09K 15/30 - Compositions anti-oxydantesCompositions inhibant les modifications chimiques contenant des composés organiques contenant un hétérocycle avec au moins un azote comme membre du cycle
G03F 7/42 - Élimination des réserves ou agents à cet effet
Silicon etching compositions are described and may be used for selectively etching silicon with respect to a silicon insulating film. In particular, the silicon etching compositions can be used to improve the selective etching ratio of silicon from the surface of a semiconductor on which a silicone oxide film and silicon are exposed.
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
26.
Etching composition for metal nitride layer and etching method using the same
The present disclosure provides an etching composition for a metal nitride layer and an etching method of a metal nitride layer using the same, and more particularly, to an etching composition for a metal nitride layer selectively etching the metal nitride layer, an etching method of a metal nitride layer using the etching composition, and a method of manufacturing a microelectronic device, the method including an etching process performed using the etching composition.
C09K 13/10 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du bore
C09K 13/00 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage
C09K 13/04 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique
C23F 1/00 - Décapage de matériaux métalliques par des moyens chimiques
C23F 1/44 - Compositions pour enlever des matériaux métalliques d'un substrat métallique de composition différente
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
Silicon etching compositions are described and may be used for selectively etching silicon with respect to a silicon insulating film. In particular, the silicon etching compositions can be used to improve the selective etching ratio of silicon from the surface of a semiconductor on which a silicone oxide film and silicon are exposed.
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
Provided is an etchant composition for a semiconductor substrate which may selectively etch a high-concentration doped layer of an extrinsic semiconductor, and according to the present disclosure, an etchant composition for a semiconductor substrate which, in etching an extrinsic semiconductor substrate including doped layers having different doping concentrations, may etch the high-concentration doped layer at a high selection ratio, and suppress bubble formation during an etching process to allow uniform and stable etching, an etching method using the same, and a manufacturing method of a semiconductor substrate may be provided.
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
29.
Cleaning composition and cleaning method using the same
A cleaning composition for removing post-etch or post-ash residues from a semiconductor substrate, and a cleaning method using the same are disclosed. The cleaning composition can comprise water; a fluorine compound; an alkanolamine compound; and a corrosion inhibitor. The corrosion inhibitor is a mixture of a first corrosion inhibitor and a second corrosion inhibitor. When using the cleaning composition, it is possible to efficiently remove the residues of various aspects existing on a surface of the substrate or the semiconductor device without damage to a substrate or a semiconductor device including various metal layers, insulating layers, etc. Accordingly, when a highly integrated and miniaturized semiconductor device is manufactured, it may be advantageously applied to the removal of residues generated on the surface of the substrate or the semiconductor device.
Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
C23F 1/44 - Compositions pour enlever des matériaux métalliques d'un substrat métallique de composition différente
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
32.
Etching composition and etching method using the same
Provided are an etching composition and an etching method using the same, and more particularly, an etching composition for selectively etching a metal nitride film, an etching method of the metal nitride film using the same, and a method of manufacturing a microelectronic device including a process performed using the same.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
Provided are a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition, capable of etching the silicon nitride layer at a high selectivity ratio relative to a silicon oxide layer by comprising a polysilicon compound in the etching composition, an etching method of a silicon nitride layer using the same, and a method of manufacturing a semiconductor device.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
C09K 13/04 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique
Provided is a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition including two different silicon-based compounds in an etching composition to be capable of selectively etching a silicon nitride layer relative to a silicon oxide layer with a remarkable etch selectivity ratio and providing remarkable effects of suppressing generation of precipitates and reducing the abnormal growth of other layers existing in the vicinity, including the silicon oxide layer when the silicon nitride layer etching composition is used for an etching process and a semiconductor manufacturing process.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
36.
Polysiloxane-based compound, silicon nitride layer etching composition including the same
Provided are a polysiloxane-based compound, a selective etching composition with respect to a silicon nitride layer including the polysiloxane-based compound, and a method of manufacturing a semiconductor device including the etching composition. The silicon nitride layer etching composition including the polysiloxane-based compound may selectively etch the silicon nitride layer relative to a silicon oxide layer, and have a significantly excellent etch selectivity ratio, and a small change in etch rate and a small change in etch selectivity ratio with respect to the silicon nitride layer even when time for using the composition increases or the composition is repeatedly used.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
C08G 77/28 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène groupes contenant du soufre
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
C08G 77/30 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène groupes contenant du phosphore
C08G 77/26 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène groupes contenant de l'azote
37.
Pre-treatment composition before etching SiGe and method of fabricating semiconductor device using the same
C23C 22/48 - Traitement chimique de surface de matériaux métalliques par réaction de la surface avec un milieu réactif laissant des produits de réaction du matériau de la surface dans le revêtement, p. ex. revêtement par conversion, passivation des métaux au moyen de solutions aqueuses au moyen de solutions aqueuses acides d'un pH < 6 ne contenant ni phosphates, ni composés du chrome hexavalent, ni fluorures ou fluorures complexes, molybdates, tungstates, vanadates ou oxalates
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
C09K 13/00 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage
The present invention relates to a silicon nitride film etching composition, which can minimize the etching rate to a silicon oxide film, can selectively etch a silicon nitride film, leaves no particles on a substrate, and is stable at a high temperature.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
The present invention relates to an etching solution composition comprising: hydrogen peroxide; a cyclic or aromatic compound including in a molecule, any one or more selected from among oxygen, sulfur, and nitrogen; an amino carboxylic-based or amino phosphate-based compound; one or more compounds selected from among organic acids, inorganic acids, or salts thereof; an undercut inhibitor; and alkylamine including C4 or higher. The etching solution composition of the present invention controls over-etching at the interface between copper and molybdenum films during an etching process. Thus, the etching process is stable, and etching properties can be improved.
C23F 1/44 - Compositions pour enlever des matériaux métalliques d'un substrat métallique de composition différente
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
C09K 13/10 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du bore
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
35 - Publicité; Affaires commerciales
36 - Services financiers, assurances et affaires immobilières
Produits et services
Caustic soda for industrial purposes; chemical preparations
for use in industry; photoinitiators; synthetic resins,
unprocessed; acrylic resins, unprocessed; epoxy resins,
unprocessed; artificial resins, unprocessed; plastics,
unprocessed; photosensitizer for semiconductor circuit
devices; catalyst for semiconductor circuit devices;
developers for semiconductor circuit devices (chemicals);
fluorine compound; hydrofluoric acid; photographic
sensitizers; chemicals for use in biotechnological
manufacturing processes; biological preparations for use in
biotechnology [other than medical]; chemicals for use in
life science product development; etchant (chemical for
industrial use); pigment dispersion (industrial chemicals);
ammonia water; organic acids; chemicals for use in
manufacturing secondary batteries; chemicals for cathode
materials for secondary batteries; high purity chemical
reagents for use in the electronic industry; stripper for
manufacturing electronic parts (industrial chemicals);
polyester resin for manufacturing electronic parts,
unprocessed; thinner for manufacturing electronic parts
(industrial chemicals); polymethyl methacrylate resin for
manufacturing electronic parts; electrolytes for battery;
electrolyte solution for battery production (chemical
agent); chemicals for manufacturing batteries; industrial
chemicals in the form of polymerization monomer; industrial
chemicals in the form of monomers for the production of
plastic lenses. Biotechnology reagent wholesaler; biotechnology reagent
retail; business intermediary services relating to
biotechnology reagents; biotechnology reagent sales agency;
import agency services; export agency services; advisory and
consultancy services relating to import-export agencies;
import-export agencies in the field of energy; alcohol sales
agency; alcohol purchase agency; alcohol wholesaler; alcohol
retail; business intermediary services relating to alcohol;
wholesaler for industrial chemicals and adhesives; business
intermediary services for industrial chemicals and
adhesives; business intermediary services relating to
catalysts for manufacturing industrial chemicals; wholesaler
for catalysts for manufacturing industrial chemicals; retail
for catalysts for manufacturing industrial chemicals; sales
agency for catalysts for manufacturing industrial chemicals;
business intermediary services relating to industrial
chemicals; industrial chemicals sales agency; wholesaler for
dopants for use in manufacturing semiconductor; business
intermediary services relating to dopants for use in
manufacturing semiconductor; purchase agency for dopants for
use in manufacturing semiconductor; retail for dopants for
use in manufacturing semiconductor; sales agency for dopants
for use in manufacturing semiconductor; purchase agency for
surface coating chemicals for LCD; wholesaler for surface
coating chemicals for LCD; retail for surface coating
chemicals for LCD; business intermediary services relating
to surface coating chemicals for LCD; sales agency for
surface coating chemicals for LCD; retail for surface
coating chemicals for OLED; sales agency for surface coating
chemicals for OLED; purchase agency for surface coating
chemicals for OLED; wholesaler for surface coating chemicals
for OLED; business intermediary services relating to surface
coating chemicals for OLED; wholesaler for surface coating
chemicals for PDP; business intermediary services relating
to surface coating chemicals for PDP; purchase agency for
surface coating chemicals for PDP; retail for surface
coating chemicals for PDP; sales agency for surface coating
chemicals for PDP; purchase agency for chemicals for
processing X-ray films; retail for chemicals for processing
x-ray films; purchase agency for industrial chemicals and
adhesives; retail for industrial chemicals and adhesives;
sales agency for industrial chemicals and adhesives;
purchase agency for catalysts for manufacturing industrial
chemicals; industrial chemicals retail; industrial chemicals
purchase agency; industrial chemicals wholesaler; purchase
agency for industrial chemicals and artificial resins,
unprocessed; business intermediary services for industrial
chemicals and artificial resins, unprocessed; wholesaler for
industrial chemicals and artificial resins, unprocessed;
retail for industrial chemicals and artificial resins,
unprocessed; sales agency for industrial chemicals and
artificial resins, unprocessed; purchase agency for chemical
raw material for use in semiconductor thin film deposition
for manufacturing semiconductor device; wholesaler for
chemical raw material for use in semiconductor thin film
deposition for manufacturing semiconductor device; retail
for chemical raw material for use in semiconductor thin film
deposition for manufacturing semiconductor device; business
intermediary services relating to chemical raw material for
use in semiconductor thin film deposition for manufacturing
semiconductor device; sales agency for chemical raw material
for use in semiconductor thin film deposition for
manufacturing semiconductor device; goods import-export
agencies; wholesaler for chemicals for use in
biotechnological manufacturing processes; retail for
chemicals for use in biotechnological manufacturing
processes. Real estate agency services; appraisal and evaluation of
real estate; appraisal of real estate; financial investment
in the field of real estate; real estate lease and
brokerage; real estate leasing and leasing contract
services; real estate procurement for others; real estate
evaluation and management.
36 - Services financiers, assurances et affaires immobilières
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
Produits et services
Wholesale distributorships featuring biotechnology reagents; Retail store services featuring biotechnology reagents; Business advisory services relating to biotechnology reagents; Biotechnology reagent sales promotion for others; Import agency services in the field of biotechnology reagents; Export agency services for the goods of others; Business advisory and consultancy services relating to import-export agencies; Import-export agencies in the field of energy; Alcohol sales promotion for others; Alcohol purchasing agents; Wholesale distributorships featuring alcohol; Retail store services featuring alcohol; Business advisory services relating to alcohol; Wholesale distributorships featuring for industrial chemicals and adhesives; Business advisory services for industrial chemicals and adhesives; Business advisory services relating to catalysts for manufacturing industrial chemicals; Wholesale distributorships featuring catalysts for manufacturing industrial chemicals; Retail store services featuring catalysts for manufacturing industrial chemicals; Sales promotion for others in the field of catalysts for manufacturing industrial chemicals; Business advisory services relating to industrial chemicals; Industrial chemicals sales promotion for others; Wholesale distributorships featuring dopants for use in manufacturing semiconductors; Business advisory services relating to dopants for use in manufacturing semiconductors; Purchasing agents for dopants for use in manufacturing semiconductors; Retail store services featuring dopants for use in manufacturing semiconductors; Sales promotion for others in the field of dopants for use in manufacturing semiconductors; Purchasing agents for surface coating chemicals for LCD panels; Wholesale distributorships featuring surface coating chemicals for LCD panels; Retail store services featuring surface coating chemicals for LCD panels; Business advisory services relating to surface coating chemicals for LCD panels; Sales promotion for others for surface coating chemicals for LCD panels; Retail store services featuring surface coating chemicals for OLED (organic light-emitting diode) display panels; Sales promotion for others for surface coating chemicals for OLED (organic light-emitting diode) display panels; Purchasing agents for surface coating chemicals for OLED (organic light-emitting diode) display panels; Wholesale distributorships featuring surface coating chemicals for OLED (organic light-emitting diode) display panels; Business advisory services relating to surface coating chemicals for OLED (organic light-emitting diode) display panels; Wholesale distributorships featuring surface coating chemicals for plasma display panel (PDP) televisions; Business advisory services relating to surface coating chemicals for plasma display panel (PDP) televisions; Purchasing agents for surface coating chemicals for plasma display panel (PDP) televisions; Retail store services featuring surface coating chemicals for plasma display panel (PDP) televisions; Sales promotion for others for surface coating chemicals for plasma display panel (PDP) televisions; Purchasing agents for chemicals for processing X-ray films; Retail store services featuring chemicals for processing X-ray films; Purchasing agents for industrial chemicals and adhesives; Retail store services featuring industrial chemicals and adhesives; Sales promotion for others for industrial chemicals and adhesives; Purchasing agents for catalysts for manufacturing industrial chemicals; Retail store services featuring industrial chemicals; Purchasing agents for industrial chemicals; Wholesale distributorships featuring industrial chemicals; Purchasing agents for industrial chemicals and artificial resins, unprocessed; Business advisory services for industrial chemicals and artificial resins, unprocessed; Wholesale distributorships featuring for industrial chemicals and artificial resins, unprocessed; Retail store services featuring industrial chemicals and artificial resins, unprocessed; Sales promotion for others for industrial chemicals and artificial resins, unprocessed; Purchasing agents for chemical raw materials for use in semiconductor thin film deposition for manufacturing semiconductor devices; Wholesale distributorships featuring chemical raw materials for use in semiconductor thin film deposition for manufacturing semiconductor devices; Retail store services featuring chemical raw materials for use in semiconductor thin film deposition for manufacturing semiconductor devices; Business advisory services relating to chemical raw materials for use in semiconductor thin film deposition for manufacturing semiconductor devices; Sales promotion for others for chemical raw materials for use in semiconductor thin film deposition for manufacturing semiconductor devices; Goods import-export agencies; Wholesale distributorships featuring chemicals for use in biotechnological manufacturing processes; Retail store services featuring chemicals for use in biotechnological manufacturing processes [ Real estate agency services; Appraisal and valuation of real estate; Appraisal of real estate; Financial investment in the field of real estate; Real estate lease and brokerage; Real estate leasing; Real estate procurement for others; Real estate assessment and management ] Caustic soda for industrial purposes; Chemical preparations for use in industry; Chemicals, namely, photo initiators for use in the manufacture of semiconductors, display panels and electronics parts; Synthetic resins, unprocessed; Acrylic resins, unprocessed; Epoxy resins, unprocessed; Artificial resins, unprocessed; Plastics, unprocessed; Chemicals, namely, photosensitizer for use in the manufacture of semiconductor circuit devices; Catalyst for use in the manufacture of semiconductor circuit devices; Chemicals, namely, developers for semiconductor circuit devices; Chemical fluorine compound; Hydrofluoric acid; Chemicals, namely, photographic sensitizers for use in the manufacture of semiconductors, display panels and electronic parts; Chemicals for use in biotechnological manufacturing processes; Biological preparations for use in biotechnology industry and science; Chemicals for use in life science biotechnological product development; Etchants for use in the manufacture of semiconductors, display panels and electronic parts; Industrial chemicals for pigment dispersion; ammonia water; organic mineral acids; chemicals for use in manufacturing secondary batteries; chemicals for cathode materials for secondary batteries; high purity chemical reagents for non-medical purposes for use in the electronic industry; Industrial chemicals for use in manufacturing electronic parts; Unprocessed polyester resin for manufacturing electronic parts; Chemicals used in industry for manufacturing electronic parts; Polymethyl methacrylate resin for manufacturing electronic parts; Battery electrolytes; Battery electrolytes solution for use in the manufacture of batteries; Chemicals for manufacturing batteries; Industrial chemicals in the form of polymerization monomer; Industrial chemicals in the form of monomers for the production of plastic lenses
Provided is a copper etchant composition including: a first organic acid containing one or more amine groups, and one or more carboxylic acid groups; a second organic acid; an amine compound; hydrogen peroxide; and a phosphate compound, which has the increased number of processing sheets and etching uniformity, when etching copper.
C23F 1/18 - Compositions acides pour le cuivre ou ses alliages
C23F 1/44 - Compositions pour enlever des matériaux métalliques d'un substrat métallique de composition différente
C23F 1/46 - Régénération des compositions de décapage
C23F 4/00 - Procédés pour enlever des matériaux métalliques des surfaces, non couverts par le groupe ou
H01L 21/04 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs ayant des barrières de potentiel, p. ex. une jonction PN, une région d'appauvrissement ou une région de concentration de porteurs de charges
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
The present invention relates to a cleaner composition. Specifically, the present invention relates to a cleaner composition that can be used to remove metal oxides and metal abrasive particles arising during metal polishing, such as chemical mechanical planarization (CMP). The cleaner composition has an improved ability to complex with metal abrasive particles. In addition, the cleaner composition maintains its ability to reduce metal abrasive particles, achieving improved stability. Therefore, the cleaner composition can be used for cleaning the surface of a metal with an increased ability to prevent corrosion of the metal surface.
Provided is a method for manufacturing a glycol based compound. The method comprises agitating a mixture of a first glycol based compound, a hydrazide based compound, and a sulfonic acid based compound, and performing fractional distillation of resultant materials of the agitating to recover a second glycol based compound having a formaldehyde content of 0 ppm.
A cathode active material for a lithium battery, according to the present invention, is a particle of a porous structure in which pores are distributed over the entire inner area of a secondary particle formed as an aggregate of a primary particle, wherein the distribution shape of the pores is formed to be radial so as to have a wide specific surface area such that the migration resistance of a lithium ion is reduced since an electrolyte can easily flow into the pores, thereby enabling the manufacture of a secondary battery having high-power characteristics.
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p. ex. LiNiO2, LiCoO2 ou LiCoOxFy
H01M 4/505 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de manganèse d'oxydes ou d'hydroxydes mixtes contenant du manganèse pour insérer ou intercaler des métaux légers, p. ex. LiMn2O4 ou LiMn2OxFy
The present invention relates to a multiple line-laser annealing apparatus. The objective of the present invention is to obtain multiple line-laser light uniformly distributed all over and enable base materials having different local annealing conditions to be treated at the same time, to thus improve the productivity of an annealing process. To this end, the multiple line-laser annealing apparatus according to the present invention comprises: at least one primary light source unit; at least one secondary light source unit for convert the laser beam generated by the primary light source unit into multiple linear lasers; and a base plate for fixing an annealing base material such that the annealing base material can be annealed by the multiple lasers emitted by the secondary light source unit. Thus, the multiple line-laser annealing apparatus of the present invention is advantageous in that it can enable high optical efficiency and light of multiple lines that are uniformly distributed all over to be obtained, and base materials having different local annealing conditions to be treated at the same time, to thus improve the productivity of an annealing process.
The present invention relates to a line laser module. The main objective of the present invention is to obtain high optical efficiency and line light uniformly distributed as a whole and to allow little deviation in the uniformity of the light at the center and edge of the line laser. To this end, the line laser module according to the present invention comprises: at least one beam splitter arranged at one end of a light source so as to reflect and transmit the primary light from a primary light source unit; control mirrors symmetrically arranged so as to reflect the bifurcated light reflected and transmitted by the beam splitter; and a secondary light source unit for reflecting the light reflected by the control mirrors as amplified, uniformly-reflected light by constructive interference. Thus, the line laser module of the present invention is advantageous as it enables high optical efficiency to be obtained and line light uniformly distributed all over, and allows little deviation in the uniformity of the light at the center and edge of the line laser.
H01S 3/10 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p. ex. commutation, ouverture de porte, modulation ou démodulation
The present invention relates to an etchant composition for a copper/molybdenum alloy film, which comprises, with respect to the total weight of the composition, 0.01-5 wt% of peroxide, 0.01-5 wt% of a compound including nitrogen and sulfur atoms, 0.1-5 wt% of an organic acid, 0.1-5 wt% of a heterocyclic compound, 0.1-5 wt% of a chelate agent, 0.01-1 wt% of fluoride, and the balance as water to render the total weight of the composition 100% by weight. The etchant composition according to the present invention can be effectively used in the production of electrodes for TFT-LCD displays because the composition can maintain etching characteristics such as taper angle, CD loss, and etching linearity even when the amount of metal ions in the etchant becomes high due to the repetition of the etching process.
The present invention relates to an etching-solution composition for a molybdenum alloy film and an indium oxide film, and relates to an etching-solution composition for a molybdenum alloy film, an indium oxide film or a multilayer film of a molybdenum alloy film and an indium oxide film, wherein the composition comprises, with respect to the total weight of the composition, between 5 and 25 wt.% of hydrogen peroxide, between 0.1 and 2 wt.% of a corrosion inhibitor, between 0.1 and 2 wt.% of a fluorine-containing compound, between 0.1 and 2 wt.% of a chlorine-containing compound, between 0.1 and 5 wt.% of a hydrogen peroxide stabilizer and water to make the total weight of the entire composition up to 100 wt.%. The aim of the present invention is to provide an etching-solution composition which controls the production of precipitates when etching a molybdenum alloy film, an indium oxide film or a multilayer film of a molybdenum alloy film and an indium oxide film used in a TFT-LCD pixel electrode, such that the durability of etching equipment can be improved and the corrosion of copper used as the source and drain of a lower TFT is minimised.
The present invention relates to a method for increasing the etching capacity of a copper/molybdenum alloy film used in the manufacture of TFT-LCD. The method of the present invention can increase the etching capacity of an etchant by recovering the degradation of etching properties such as an etch rate, a taper profile, and etch linearity which are generated when etching is repeated using the etchant with the copper/molybdenum alloy film, thereby substantially reducing production costs for TFT-LCD, and the like.
The present invention relates to a method for purifying waste organic solvents. An alkoxide-based compound is added to waste organic solvents containing propylene glycol monomethylether acetate produced in a display manufacturing process and the like and the obtained mixture is reacted, thereby recovering purified products of a high purity in a high yield through the change in the boiling points of impurities such as propionates and ketones.
A photoresist stripper composition comprising 0.5 to 5 % by weight of alkyl ammonium hydroxide; 60 to 90 % by weight of aprotic polar solvent; 0.1 to 3 % by weight of aromatic polyhydric alcohol; 0.1 to 5 % by weight of linear polyhydric alcohol; and 5 to 30 % by weight of water has an excellent capacity for stripping a positive and a negative photoresists, and dose not corrode a metal wiring under the photoresist.
The present invention relates to a method for treating waste organic solvents which are generated in the process of manufacturing a display device. The method for treating waste organic solvents according to the present invention minimizes process trouble caused by the formation of a crosslinked structure by heat in the purification process of waste organic solvents, lowers the operation costs of equipment, and improves the recovery rate of organic solvents by suppressing the cross-linking polymerization of a negative photoresist component.
