Provided is a copper alloy sheet material having a chemical composition of, in mass%, Ni: 0.1-5.0%, Sn: 0.1-5.0%, and P: 0.01-0.5%, which may contain certain optional elements, with the balance being Cu and unavoidable impurities. In measurement at a step size of 0.1 μm by EBSD, the average crystal grain size by the area fraction method, taking a boundary having a crystal orientation difference of 5° or more as a crystal grain boundary, is 1-4 μm, and the GROD average value is 1-5°.
C22C 9/06 - Alliages à base de cuivre avec le nickel ou le cobalt comme second constituant majeur
C22C 9/02 - Alliages à base de cuivre avec l'étain comme second constituant majeur
C22F 1/00 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid
C22F 1/08 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid du cuivre ou de ses alliages
2.
METHOD FOR PRODUCING SM-FE-N-BASED MAGNETIC POWDER AND SM-FE-N MAGNETIC POWDER
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japon)
Inventeur(s)
Yamada Tomoya
Kumon Shoichi
Michiaki Yoshiyuki
Sato Kimitaka
Yamaguchi Wataru
Hosokawa Akihide
Takagi Kenta
Ozaki Kimihiro
Abrégé
maxmax and having few impurities. [Solution] This method for producing an Sm-Fe-N-based magnetic powder comprises: a heat treatment step in which a powder of Sm-Fe alloy, which has been formed in a solidification process according to a gas atomization method and of which the Sm/Fe molar ratio is between 0.09 and 0.25 inclusive, is heated to a temperature between 900°C and 1200°C inclusive to thereby coarsen the crystal grains of the particles of said powder; a crushing step in which the powder of the Sm-Fe alloy of which the crystal grains have been coarsened by the heat treatment step is crushed to thereby make the particles of said powder finer by fracture, which includes intragranular fracture; and a nitriding step in which the powder of the Sm-Fe alloy made finer by the crushing step is heated and held in an atmosphere of a non-oxidizing gas containing a nitrogen compound or nitrogen in a temperature range of 500°C or less to thereby introduce nitrogen into the particles of the powder.
B22F 9/04 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques à partir d'un matériau solide, p. ex. par broyage, meulage ou écrasement à la meule
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 1/052 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules caractérisées par un mélange de particules de dimensions différentes ou par la distribution granulométrique des particules
B22F 9/08 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques à partir d'un matériau liquide par coulée, p. ex. à travers de petits orifices ou dans l'eau, par atomisation ou pulvérisation
C22C 38/00 - Alliages ferreux, p. ex. aciers alliés
H01F 1/059 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments Va, p. ex. Sm2Fe17N2
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
3.
GALLIUM OXIDE-DEPOSITED SILVER POWDER, METHOD FOR PRODUCING SAME, AND CONDUCTIVE PASTE
[Problem] To provide a silver powder in which line resistance is reduced when the surface of silver powder is modified and the obtained silver powder is made into a past to be used for electrode formation, and a method for producing the same. [Solution] When metallic silver particles are deposited from an aqueous solution containing silver ions, by allowing a gallium compound to coexist in the aqueous solution, and by using a reducing agent which has an effect of lowering the pH of the aqueous solution upon addition or an oxidation product of which has an effect of lowering the pH of the aqueous solution, it is possible to obtain gallium oxide-deposited silver powder. When the deposited silver powder is made into a paste and used for electrode formation, the obtained electrode has low resistance.
B22F 1/16 - Particules métalliques revêtues d'un non-métal
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 1/05 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules
B22F 1/052 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules caractérisées par un mélange de particules de dimensions différentes ou par la distribution granulométrique des particules
B22F 9/00 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet
B22F 9/24 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques à partir de mélanges métalliques liquides, p. ex. de solutions
H01B 1/00 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisésEmploi de matériaux spécifiés comme conducteurs
H01B 1/02 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisésEmploi de matériaux spécifiés comme conducteurs composés principalement de métaux ou d'alliages
H01B 1/20 - Matériau conducteur dispersé dans un matériau organique non conducteur
H01B 1/22 - Matériau conducteur dispersé dans un matériau organique non conducteur le matériau conducteur comportant des métaux ou des alliages
H01B 5/00 - Conducteurs ou corps conducteurs non isolés caractérisés par la forme
H01B 13/00 - Appareils ou procédés spécialement adaptés à la fabrication de conducteurs ou câbles
4.
SPHERICAL SILVER POWDER, METHOD OF PRODUCING SPHERICAL SILVER POWDER, SPHERICAL SILVER POWDER PRODUCTION APPARATUS, AND CONDUCTIVE PASTE
Provided is a spherical silver powder that can bring about excellent fine line printability when used in a conductive paste or the like. The spherical silver powder has a diameter D10 at a volume-based cumulative value of 10%, a diameter D50 at a volume-based cumulative value of 50%, and a diameter D90 at a volume-based cumulative value of 90% according to laser diffraction that satisfy a formula: (D90−D10)/D50<1, and has a ratio D50/DBET of the D50 relative to a BET diameter DBET of not less than 0.90 and not more than 1.20.
B22F 1/103 - Poudres métalliques contenant des agents lubrifiants ou liantsPoudres métalliques contenant des matières organiques contenant un liant organique comprenant un mélange de, ou obtenu par réaction de, plusieurs composants autres que les solvants ou les agents lubrifiants
B22F 9/24 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques à partir de mélanges métalliques liquides, p. ex. de solutions
This vacuum carburizing method involves: repeatedly executing a carburizing gas supply pattern including a first supplying step for supplying a carburizing gas into a heating chamber charged with a workpiece, a first stopping step for stopping the supplying of the carburizing gas in the first supplying step, a second supplying step for resuming the supplying of the carburizing gas after the first stopping step, and a second stopping step for stopping the supplying of the carburizing gas in the second supplying step to carburize the workpiece; and discharging gas in the heating chamber in either the first supplying step or the second supplying step and in the first stopping step and the second stopping step.
C21D 1/74 - Procédés de traitement en gaz neutre, en atmosphère contrôlée, sous vide ou dans des matières pulvérulentes
C21D 1/773 - Procédés de traitement en gaz neutre, en atmosphère contrôlée, sous vide ou dans des matières pulvérulentes sous pression réduite ou sous vide
6.
ALUMINUM NITRIDE SINTERED SUBSTRATE, METHOD FOR PRODUCING SAME, AND INSULATING SUBSTRATE FOR ELECTRONIC CIRCUIT
[Problem] To improve the partial discharge resistance of an insulating substrate for an electronic circuit that uses an aluminum nitride sintered substrate. [Solution] Provided is an aluminum nitride sintered substrate containing zirconium-containing particles therein, wherein the aluminum nitride sintered substrate has a composition in which the Zr/Al molar ratio is 0.0017-0.0665, and the region from the end surface in the thickness direction to at least a depth of 10.0 μm is a zirconium-deficient surface layer in which the number density of the zirconium-containing particles in a cross section parallel to the thickness direction is 6.0/540μm2 or less.
C04B 35/581 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de non oxydes à base de borures, nitrures ou siliciures à base de nitrure d'aluminium
H01L 23/13 - Supports, p. ex. substrats isolants non amovibles caractérisés par leur forme
7.
AMORPHOUS COMPOSITE METAL OXIDE POWDER CONTAINING La AND Zr, POWDER THEREOF, GARNET-TYPE LITHIUM COMPOSITE METAL OXIDE, AND METHOD FOR MANUFACTURING ALL-SOLID BATTERY
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japon)
Inventeur(s)
Yamaga Kazuhiro
Fujita Hidefumi
Tanoue Koji
Akimoto Junji
Kataoka Kunimitsu
Abrégé
[Problem] To provide a technology for synthesizing a lithium composite metal oxide having a garnet-type crystal structure and a high ion conductivity even when fired at a low temperature of 700ºC or lower. [Solution] An amorphous composite metal oxide powder containing La and Zr contains 40-62 mass% of La, 8-26 mass% of Zr, and 1-20 mass% of one or two of metal elements M that can take any oxidation number of 3-6, preferably, Ta and Nb, has a carbon content of at most 1.5 mass%, and contains a remainder consisting of oxygen and inevitable impurities. The amorphous composite metal oxide powder is used as a precursor for producing a single-phase garnet-type lithium composite metal oxide.
Provided is a spherical silver powder that can bring about excellent printability and low-temperature sintering ability when used in a conductive paste or the like. The spherical silver powder has a ratio D50/DBET of a diameter D50 at a volume-based cumulative value of 50% according to laser diffraction relative to a BET diameter DBET of not less than 0.9 and not more than 1.2 and includes voids in inner parts of particles.
B22F 1/05 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules
B22F 9/24 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques à partir de mélanges métalliques liquides, p. ex. de solutions
C09D 11/037 - Encres d’imprimerie caractérisées par des particularités autres que la nature chimique du liant caractérisées par le pigment
[Problem] To provide a Sm-Fe-N-based magnetic powder that has good heat resistance in an atmospheric environment (that is, good oxidation resistance when the temperature has been raised in the atmosphere) and that, when held in an atmospheric environment, is capable of maintaining good magnetic properties as compared to conventional, typical powders that are surface-treated by phosphate coating. [Solution] Provided is a fatty acid-coated Sm-Fe-N-based magnetic powder that is composed of particles having a structure in which one or more fatty acid molecules having 12-20 carbon atoms per molecule are adhered to the surface of Sm-Fe-N-based magnetic particles, wherein, when C content (mass%) in the powder is denoted as [% C], and a cumulative 50% particle diameter (μm) of the powder in a volume-based particle size distribution by a dry laser diffraction scattering method is denoted as [D50], an adhesion amount index Ci defined by formula (1) is 0.5-50.0 mass%・μm. (1): Ci = [% C] × [D50]
H01F 1/059 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments Va, p. ex. Sm2Fe17N2
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 1/052 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules caractérisées par un mélange de particules de dimensions différentes ou par la distribution granulométrique des particules
B22F 1/102 - Poudres métalliques revêtues de matériaux organiques
B22F 3/00 - Fabrication de pièces ou d'objets à partir de poudres métalliques, caractérisée par le mode de compactage ou de frittageAppareils spécialement adaptés à cet effet
C22C 33/02 - Fabrication des alliages ferreux par des techniques de la métallurgie des poudres
C22C 38/00 - Alliages ferreux, p. ex. aciers alliés
H01F 1/06 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques durs métaux ou alliages sous forme de particules, p. ex. de poudre
H01F 1/08 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques durs métaux ou alliages sous forme de particules, p. ex. de poudre comprimées, frittées ou agglomérées
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
10.
COMPOSITE MATERIAL, METHOD FOR PRODUCING THE COMPOSITE MATERIAL, AND TERMINAL
There is provided a composite material in which a composite coating composed of a silver layer containing carbon particles is provided on a base material, wherein when the composite coating is observed with a laser microscope, a proportion of predetermined protrusions in an observation field is 12% or more by area.
C25D 15/00 - Production électrolytique ou électrophorétique de revêtements contenant des matériaux incorporés, p. ex. particules, "whiskers", fils
H01B 1/02 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisésEmploi de matériaux spécifiés comme conducteurs composés principalement de métaux ou d'alliages
11.
HEAT TREATMENT DEVICE, TEMPERATURE CONTROL AUXILIARY MECHANISM IN HEAT TREATMENT DEVICE, AND TEMPERATURE CONTROL METHOD
Provided is a heat treatment device including a heat treatment chamber for heat-treating a workpiece, and having a temperature control auxiliary mechanism attached to the heat treatment chamber. The temperature control auxiliary mechanism has an outer pipe inserted from the outside to the inside of the heat treatment chamber, and an inner pipe movably inserted into the outer pipe. The distal end of the outer pipe is closed, the distal end of the inner pipe is open, the outer pipe is provided with a discharge port outside the heat treatment chamber, and a heat insulating material that divides an internal space of the outer pipe into the distal end side and the base end side is attached to the outer circumferential surface of the inner pipe.
C21D 1/773 - Procédés de traitement en gaz neutre, en atmosphère contrôlée, sous vide ou dans des matières pulvérulentes sous pression réduite ou sous vide
C21D 1/00 - Procédés ou dispositifs généraux pour le traitement thermique, p. ex. recuit, durcissement, trempe ou revenu
C21D 1/63 - Dispositifs pour trempe pour bains de trempe
C21D 9/32 - Traitement thermique, p. ex. recuit, durcissement, trempe ou revenu, adapté à des objets particuliersFours à cet effet pour roues d'engrenage, roues hélicoïdales, ou équivalent
F27D 19/00 - Aménagement des dispositifs de commande
F27D 21/00 - Aménagement des dispositifs de surveillanceAménagement des dispositifs de sécurité
12.
CARBON NANOTUBE PRODUCTION DEVICE AND CARBON NANOTUBE MANUFACTURING DEVICE
A carbon nanotube production device for producing carbon nanotubes, said device comprising: a reaction tube to which a carbon nanotube starting material gas is supplied; a heater which is positioned at the periphery of the reaction tube; an insulating material which covers the outside of the heater; an enclosing case which surrounds and encloses the periphery of the reaction tube, and accommodates the heater and the insulating material; a supply port which supplies a shield gas to the interior of the enclosing case; and a discharge port which discharges the shield gas from the interior of the enclosing case.
A carbon nanotube collection device for collecting carbon nanotubes produced by a carbon nanotube production device, said carbon nanotube collection device comprising: a collection chamber for collecting carbon nanotubes in a collection basket, an introduction chamber for introducing an empty collection basket into the collection chamber, and an extraction chamber for extracting a collection box in which carbon nanotubes have been collected from the collection chamber, and further comprising an introduction-side door for isolating the collection chamber and the introduction chamber, and an extraction-side door for isolating the collection chamber and the extraction chamber.
Provided is a method of producing a silver powder and the silver powder that enable preparation of a conductive paste capable of forming a wiring pattern with desired line width and height. A method of producing a silver powder comprises: a disintegration step of disintegrating an agglomerated silver powder in an airflow type mill 2; and a classification step of classifying a silver powder after the disintegration step, in a pneumatic classifier 3, wherein the agglomerated silver powder has a moisture content of 2 wt % or more and 20 wt % or less, in the disintegration step, compressed air at a temperature of 80° C. or more and 180° C. or less is supplied to the airflow type mill 2 as supply air, in the classification step, an exhaust of the airflow type mill 2 and the silver powder after the disintegration step are supplied to the pneumatic classifier 3, and the exhaust has a temperature of 30° C. or more and a volumetric humidity of 20 g/m3 or more.
B22F 9/04 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques à partir d'un matériau solide, p. ex. par broyage, meulage ou écrasement à la meule
B22F 1/052 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules caractérisées par un mélange de particules de dimensions différentes ou par la distribution granulométrique des particules
B22F 9/16 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique
15.
SILVER-PLATED PRODUCT AND METHOD FOR PRODUCING SAME
A silver-plated product having a higher hardness and more excellent wear resistance than those of conventional silver-plated products, and a method for producing the same. In a method for producing a silver-plated product by forming a surface layer of silver on a base material by electroplating at a current density in a silver-plating solution which is an aqueous solution containing silver potassium cyanide or silver cyanide, potassium cyanide or sodium cyanide, and a benzimidazole (such as 2-mercaptobenzmimidazole or 2-mercaptobenzimidazole sulfonic acid sodium salt dihydrate), the ratios of the concentrations of silver potassium cyanide or silver cyanide, potassium cyanide or sodium cyanide, and the imidazole to the current density during the silver-plating (or the ratios of the concentrations of silver potassium cyanide or silver cyanide and the imidazole to the current density during the silver plating, and the concentration of potassium cyanide or sodium cyanide) are set to be predetermined ranges, respectively.
M1M2M1M2M2M1M1 ≤ 16.0 μm. The relationship between the volume distribution proportion A of whichever of the first peak and the second peak has the lower volume distribution proportion and the volume distribution proportion B, which is the minimum volume distribution proportion occurring between the first peak and the second peak, satisfies formula (III): 1.2 ≤ A / B or formula (IV): 0 = B / A.
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 1/052 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules caractérisées par un mélange de particules de dimensions différentes ou par la distribution granulométrique des particules
Disclosed is a silicon oxide-coated soft magnetic powder which is obtained by coating the surface of each core particle with silicon oxide, the core particle being formed of a soft magnetic metal that contains 20 mass% or more of iron. If Vs (V) is the dielectric breakdown voltage of the silicon oxide-coated soft magnetic powder, Vc (V) is the dielectric breakdown voltage of only the core particles, and Ts (nm) is the average film thickness of the silicon oxide, the increase rate A (%/nm) of the dielectric breakdown voltage per unit film thickness of the silicon oxide as defined by formula (1) is 55 or more. (1): A = ((Vs/Vc) - 1) × 100/Ts
H01F 1/24 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux métaux ou alliages sous forme de particules, p. ex. de poudre comprimées, frittées ou agglomérées les particules étant isolées
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 1/05 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules
B22F 1/06 - Poudres métalliques caractérisées par la forme des particules
B22F 1/16 - Particules métalliques revêtues d'un non-métal
H01F 1/33 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux mélanges de particules métalliques ou non métalliquesAimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux particules métalliques ayant un revêtement d'oxyde
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
18.
POLYMER-COATED MAGNETIC METAL PARTICLE AND METHOD FOR PRODUCING SAME
Polymer-coated magnetic metal particles according to the present invention each comprise: a magnetic metal particle; a coating layer that is provided on the surface of the magnetic metal particle and that is formed of silicon oxide; and a polymer layer that is provided on the surface of the coating layer and that contains a polymer formed of a structural unit represented by formula (1) and an alkoxysilane having an acrylic group or a methacrylic group.
G01N 33/543 - Tests immunologiquesTests faisant intervenir la formation de liaisons biospécifiquesMatériaux à cet effet avec un support insoluble pour l'immobilisation de composés immunochimiques
G01N 33/531 - Production de matériaux de tests immunochimiques
G01N 33/553 - Support métallique ou recouvert d'un métal
19.
COPPER-CERAMIC BONDED SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
There is provided a copper-ceramic bonded substrate, including: a ceramic substrate; and a copper sheet bonded to at least one surface of the ceramic substrate, wherein the copper sheet has a Vickers hardness of 42.5 HV or less, and the copper sheet has a magnesium content of 1 ppm or less, a nickel content of 2.5 ppm or less, a tin content of 0.05 ppm or less, a selenium content of 0.3 ppm or less, a tellurium content of 0.07 ppm or less, and a bismuth content of 0.2 ppm or less.
C22F 1/08 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid du cuivre ou de ses alliages
H05K 3/38 - Amélioration de l'adhérence entre le substrat isolant et le métal
20.
COMPOSITE MATERIAL, METHOD FOR PRODUCING THE COMPOSITE MATERIAL, AND TERMINAL
There is provided a composite material, that is a composite material in which a composite coating composed of a silver layer containing carbon particles is provided on a base material, wherein a crystallite size of silver of the composite coating is 30 nm or less; a value obtained by dividing an arithmetic average roughness Ra (μm) of the composite coating by a thickness (μm) of the composite coating is less than 0.2; and a proportion of carbon particles on a surface of the composite coating is 5% by area or more and 80% by area or less.
There is provided a cuboid silver powder including silver particles having a BET specific surface area of 0.5 m2/g or less. An average aspect ratio of the cuboid silver powder is 1.2 or greater and less than 2.0 as determined by observing cross-sections of 100 or more silver particles from the silver particles. An average of a ratio represented by (Formula 1) below is 0.84 or greater. The ratio is a ratio of perimeter of one silver particle among the silver particles to perimeter of a rectangle circumscribing the one silver particle.
There is provided a cuboid silver powder including silver particles having a BET specific surface area of 0.5 m2/g or less. An average aspect ratio of the cuboid silver powder is 1.2 or greater and less than 2.0 as determined by observing cross-sections of 100 or more silver particles from the silver particles. An average of a ratio represented by (Formula 1) below is 0.84 or greater. The ratio is a ratio of perimeter of one silver particle among the silver particles to perimeter of a rectangle circumscribing the one silver particle.
L/(2×major axis+2×minor axis) (Formula 1):
There is provided a cuboid silver powder including silver particles having a BET specific surface area of 0.5 m2/g or less. An average aspect ratio of the cuboid silver powder is 1.2 or greater and less than 2.0 as determined by observing cross-sections of 100 or more silver particles from the silver particles. An average of a ratio represented by (Formula 1) below is 0.84 or greater. The ratio is a ratio of perimeter of one silver particle among the silver particles to perimeter of a rectangle circumscribing the one silver particle.
L/(2×major axis+2×minor axis) (Formula 1):
where L is the perimeter (μm) of the one silver particle, and the major axis and minor axis are respectively a long side (μm) and short side (μm) of the rectangle of minimum area circumscribing an outline of cross-section of the one silver particle.
B22F 1/06 - Poudres métalliques caractérisées par la forme des particules
B22F 9/04 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques à partir d'un matériau solide, p. ex. par broyage, meulage ou écrasement à la meule
H01B 1/22 - Matériau conducteur dispersé dans un matériau organique non conducteur le matériau conducteur comportant des métaux ou des alliages
A deep ultraviolet light-emitting element includes an n-type semiconductor layer, a light-emitting layer, a p-type electron blocking layer, and a p-type contact layer, in order, on a substrate. The p-type contact layer has a superlattice structure in which a first layer formed of AlxGa1-xN and a second layer formed of AlyGa1-yN are stacked alternately. The Al composition ratio y of the second layer is 0.15 or higher. The deep ultraviolet light-emitting element includes a reflective electrode consisting of Ni and Rh directly on an outermost second layer. A guide layer having an Al composition ratio larger than those of a barrier layer of the light-emitting layer and the p-type electron blocking layer is included between the p-type electron blocking layer and a well layer closest to the p-type electron blocking layer in the light-emitting layer. A volume ratio of Rh in the reflective electrode is 75% or higher.
H10H 20/811 - Corps ayant des structures ou des superréseaux à effet quantique, p. ex. jonctions tunnel
H10H 20/816 - Corps ayant des structures contrôlant le transport des charges, p. ex. couches semi-conductrices fortement dopées ou structures bloquant le courant
H10H 20/825 - Matériaux des régions électroluminescentes comprenant uniquement des matériaux du groupe III-V, p. ex. GaP contenant de l’azote, p. ex. GaN
23.
COPPER-CERAMIC BONDED SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
There is provided a copper-ceramic bonded substrate, including: a ceramic substrate; and a copper sheet bonded to at least one surface of the ceramic substrate, wherein a dislocation density of the copper sheet is 1.5×1013 m−2 or less.
C04B 37/02 - Liaison des articles céramiques cuits avec d'autres articles céramiques cuits ou d'autres articles, par chauffage avec des articles métalliques
B32B 9/04 - Produits stratifiés composés essentiellement d'une substance particulière non couverte par les groupes comprenant une telle substance comme seul composant ou composant principal d'une couche adjacente à une autre couche d'une substance spécifique
A perovskite-type composite oxide powder according to the present invention includes: La; and at least one type of element selected from the group consisting of Sr, Ca, Co, Ni, Mn and Fe, a BET specific surface area is less than 6.0 m2/g and a formula (1) below is satisfied:
A perovskite-type composite oxide powder according to the present invention includes: La; and at least one type of element selected from the group consisting of Sr, Ca, Co, Ni, Mn and Fe, a BET specific surface area is less than 6.0 m2/g and a formula (1) below is satisfied:
1
≤
{
(
D
9
0
B
-
D
1
0
B
)
/
D
5
0
B
}
/
{
(
D
9
0
A
-
D
1
0
A
)
/
D
5
0
A
}
≤
2
.
1
(
1
)
in the formula, D10 is a cumulative 10% particle size by volume, D50 is a cumulative 50% particle size by volume and D90 is a cumulative 90% particle size by volume when a measurement was performed with a particle size distribution measuring device that uses a laser diffraction/scattering method, and a subscript “A” indicates a particle size after ultrasonic dispersion and a subscript “B” indicates a particle size before ultrasonic dispersion.
There is provided a method for processing a solar cell module, including: removing a frame member from a solar cell module to obtain a frame-removed material; crushing the frame-removed material to obtain a crushed material; and electrostatically separating the crushed material, wherein in the electrostatic separation, the crushed material is charged and separated in accordance with density and conductivity.
H10F 19/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins une cellule photovoltaïque couverte par le groupe , p. ex. modules photovoltaïques
26.
SPHERICAL SILVER POWDER AND METHOD FOR PRODUCING SPHERICAL SILVER POWDER
The purpose of the present invention is to provide a spherical silver powder that can impart an excellent thin line printability to conductive pastes. The present invention is a spherical silver powder in which a surface treatment agent is present; for which, in measurement of the thermal expansion coefficient, the maximum value of the thermal expansion coefficient with reference to the value at 50°C is 0.3% or less; for which the BET specific surface area is at least 0.1 m2/g and not more than 0.8 m29090 is at least 2.0 μm and not more than 4.0 μm.
B22F 1/102 - Poudres métalliques revêtues de matériaux organiques
B22F 9/24 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques à partir de mélanges métalliques liquides, p. ex. de solutions
27.
HEAT TREATMENT METHOD FOR LITHIUM-ION SECONDARY BATTERY
[Problem] To provide, for a heat treatment that is used in a pretreatment for recovering valuable materials from a lithium-ion secondary battery, a low-cost method for preventing thermal runaway due to ignition of the lithium-ion secondary battery without controlling the heating atmosphere. [Solution] A heat treatment method for a lithium-ion secondary battery, whereby a lithium-ion secondary battery is inserted into a plurality of housing means made of metal, and the plurality of housing means housing the lithium-ion secondary battery are heated by a heating means arranged outside the plurality of metal housing means under atmospheric conditions. Water is stored and heated together with the lithium-ion secondary battery in some or all of the plurality of metal housing means, and thereby the rate of temperature increase of the housing means in which the lithium-ion secondary battery is housed is adjusted, and as a result, during the heat treatment, thermal runaway due to ignition of the lithium-ion secondary battery can be prevented.
gpp・gp・g of the pseudo substrate layer with respect to the initial growth substrate is not less than 0.7%; N is a natural number of not less than three; and there are not fewer than three buffer layers having a misfit dislocation on the initial-growth-substrate side of the buffer layer.
H10H 20/815 - Corps ayant des structures de relaxation des contraintes, p. ex. des couches tampons
H01L 21/20 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
H10H 20/824 - Matériaux des régions électroluminescentes comprenant uniquement des matériaux du groupe III-V, p. ex. GaP
H10H 20/841 - Revêtements réfléchissants, p. ex. réflecteurs de Bragg en diélectriques
29.
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Provided is a semiconductor light-emitting element that has a high reverse voltage (Vr) while a dry etching scheme is used as a mesa formation scheme for a support substrate-bonded type semiconductor light-emitting element. The semiconductor light-emitting element is provided with, on a support substrate in the following order: a reflection layer; an intermediate electrode layer; a first conductivity type layer; an active layer; and a second conductivity type layer. The semiconductor light-emitting element is characterized in that: the intermediate electrode layer comprises a dielectric section and a conductor section, the outer peripheral section of the intermediate electrode layer constituting the dielectric section; the dielectric section is present on the outside of side surfaces extending from the first conductivity type layer to the second conductivity type layer; the angle between the dielectric section and the side surface of the first conductivity type layer is 70 to 85°; and no notches are present on the side surface of a semiconductor laminate.
H10H 20/819 - Corps caractérisés par leur forme particulière, p. ex. substrats incurvés ou tronqués
H10H 20/814 - Corps ayant des moyens réfléchissants, p. ex. des réflecteurs de Bragg en semi-conducteurs
H10H 20/821 - Corps caractérisés par leur forme particulière, p. ex. substrats incurvés ou tronqués des régions électroluminescentes, p. ex. jonctions du type non planaire
H10H 20/824 - Matériaux des régions électroluminescentes comprenant uniquement des matériaux du groupe III-V, p. ex. GaP
This carburizing method uses a carburizing gas, and involves repeatedly supplying and halting the supplying of the carburizing gas. The start of the supplying and the halting of the supplying are each performed at a timing based on the carbon infiltration rate at which carbon enters a treatment target object by the carburizing gas.
The purpose of the present invention is to provide a silver powder and a production method for the silver powder that make it possible to prepare a conductive paste that makes it possible to obtain a wiring pattern that has a comparatively large ratio (aspect ratio) of height to line width. This silver powder includes pores enclosed in silver particles. The value of Sa/BET diameter, which is found by dividing the arithmetic average roughness Sa (nm) of the surface of the silver particles by the BET diameter found by using the values of the specific surface area (m2/g) and the true density as measured by the single-point BET method to calculate 6/(specific surface area×true density), is at least 0.0070. This production method for a silver powder includes a crushing step for crushing an agglomerated silver powder with an airflow-type pulverizer and a classification step for classifying the silver powder that has undergone the crushing step with a pneumatic classifier. The agglomerated silver powder has a water content of 5.0–30.0 wt%. At the crushing step, compressed air that is at a temperature of 80°C–180°C is supplied to the airflow-type pulverizer as supplied air. At the classification step, exhaust air from the airflow-type pulverizer and the silver powder that has undergone the crushing step are supplied to the pneumatic classifier, the exhaust air being at a temperature of at least 30°C and having a volume absolute humidity of at least 20 g/m3.
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 1/05 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules
B22F 1/06 - Poudres métalliques caractérisées par la forme des particules
B22F 9/24 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques à partir de mélanges métalliques liquides, p. ex. de solutions
H01B 1/00 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisésEmploi de matériaux spécifiés comme conducteurs
H01B 1/22 - Matériau conducteur dispersé dans un matériau organique non conducteur le matériau conducteur comportant des métaux ou des alliages
H01B 5/00 - Conducteurs ou corps conducteurs non isolés caractérisés par la forme
H01B 13/00 - Appareils ou procédés spécialement adaptés à la fabrication de conducteurs ou câbles
32.
SILVER POWDER, METHOD FOR PRODUCING SILVER POWDER, DEVICE FOR PRODUCING SILVER POWDER, AND RESIN-CURABLE CONDUCTIVE PASTE
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 1/05 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules
B22F 1/07 - Poudres métalliques caractérisées par des particules ayant une structure nanométrique
B22F 9/24 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques à partir de mélanges métalliques liquides, p. ex. de solutions
H01B 1/22 - Matériau conducteur dispersé dans un matériau organique non conducteur le matériau conducteur comportant des métaux ou des alliages
33.
SILVER POWDER AND RESIN-CURABLE ELECTROCONDUCTIVE PASTE
The purpose of the present invention is to provide a silver powder that, when formed into an electroconductive paste, is capable of demonstrating low volume resistivity even if calcinated at a low temperature. The present invention is a silver powder which contains a surface treatment agent, and in which the ratio of the amount of oxygen to the BET surface area is at least 0.11 and the crystal grain size is 30 nm to 38 nm.
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 1/05 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules
B22F 1/07 - Poudres métalliques caractérisées par des particules ayant une structure nanométrique
B22F 1/102 - Poudres métalliques revêtues de matériaux organiques
B22F 9/24 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques à partir de mélanges métalliques liquides, p. ex. de solutions
B82Y 30/00 - Nanotechnologie pour matériaux ou science des surfaces, p. ex. nanocomposites
B82Y 40/00 - Fabrication ou traitement des nanostructures
H01B 1/22 - Matériau conducteur dispersé dans un matériau organique non conducteur le matériau conducteur comportant des métaux ou des alliages
34.
METHOD FOR PRODUCING REGENERATED POSITIVE ELECTRODE MATERIAL PRECURSOR AND REGENERATED POSITIVE ELECTRODE MATERIAL, AND METHOD FOR USING REGENERATED POSITIVE ELECTRODE MATERIAL
Provided is a method for producing a regenerated positive electrode material precursor from a lithium-ion secondary cell that is an object to be processed, the method comprising performing a heat treatment step, a crushing step, a classification and sorting step, a magnetic separation step, an acid leaching step, an iron removal step, an ion exchange step, an alkali treatment step, and a washing step on the lithium-ion secondary cell that is the object to be processed.
C22B 3/06 - Extraction de composés métalliques par voie humide à partir de minerais ou de concentrés par lixiviation dans des solutions inorganiques acides
C22B 3/24 - Traitement ou purification de solutions, p. ex. de solutions obtenues par lixiviation par des procédés physiques, p. ex. par filtration, par des moyens magnétiques par adsorption sur des substances solides, p. ex. par extraction avec des résines solides
C22B 3/44 - Traitement ou purification de solutions, p. ex. de solutions obtenues par lixiviation par des procédés chimiques
H01M 10/54 - Récupération des parties utiles des accumulateurs usagés
Provided is a method of recovering valuable materials that is a method of recovering lithium carbonate from a lithium-ion secondary battery, where the lithium carbonate has a boron content of less than 1 ppm and a calcium content of 100 ppm or less. The method includes a heat treatment step, a crushing and classification step, a slurry formation step, a wet magnetic separation step, an acid leaching step, a neutralization step, a neutralized cake solid-liquid separation step, a calcium carbonate crystallization step, a calcium carbonate solid-liquid separation step, and a calcium adsorption and removal step.
A vacuum carburizing furnace includes: a heating chamber in which a vacuum carburizing treatment is performed on a workpiece to be charged from outside the furnace; and a charging port for the workpiece, the charging port provided at a bottom portion of the heating chamber.
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japon)
Inventeur(s)
Yamada Tomoya
Michiaki Yoshiyuki
Kumon Shoichi
Sato Kimitaka
Yamaguchi Wataru
Hosokawa Akihide
Takagi Kenta
Abrégé
5050 in the volume-based particle size distribution by the laser diffraction scattering method of, for example, 0.5-5.0 μm (inclusive). As the alkaline earth metal element Ae, for example, one or more elements selected from Mg and Ca can be employed. The coating layer can be formed by performing co-sputtering of Al and Ae using, for example, a sputtering film forming device.
B22F 1/17 - Particules métalliques revêtues de métal
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 1/05 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules
B22F 9/08 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques à partir d'un matériau liquide par coulée, p. ex. à travers de petits orifices ou dans l'eau, par atomisation ou pulvérisation
C22C 21/06 - Alliages à base d'aluminium avec le magnésium comme second constituant majeur
C22C 23/02 - Alliages à base de magnésium avec l'aluminium comme second constituant majeur
C22C 38/00 - Alliages ferreux, p. ex. aciers alliés
H01F 1/06 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques durs métaux ou alliages sous forme de particules, p. ex. de poudre
H01F 1/059 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments Va, p. ex. Sm2Fe17N2
39.
SELECTIVE PLATING MASK MEMBER AND SELECTIVE PLATING METHOD
There are provided a selective plating mask member including: a drum-shaped jig having a jig opening arrangement region which is a region having a jig opening portion that communicates an outer side surface with an inner side surface of the drum-shaped jig, that is a strip shaped recess provided along a circumferential direction on the outer side surface; and a mask that embeds the jig opening arrangement region and has a mask opening at a location corresponding to the jig opening, wherein the mask is placed in the jig opening arrangement region, a through hole composed of the jig opening and the mask opening is provided, and an edge of the mask opening is raised toward outside of the drum-shaped jig, and there is provided a related technique thereof.
Provided is a device for collecting carbon nanotubes which comprises: a collection chamber having an opening communicating with a device for yielding carbon nanotubes; and a removal mechanism for removing carbon-nanotube deposits attached to wall surfaces surrounding the opening. The removal mechanism comprises a removal member to be inserted into the deposits and a driving part for moving the removal member between a removal position and a retreat position. The driving part further has a configuration for rotating the removal member on the moving direction of the removal member as a rotation axis.
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
09 - Appareils et instruments scientifiques et électriques
Produits et services
Battery material, namely silver oxide, silver powder, silver oxide powder, zinc powder, nickel powder, metal powder, ferrite powder,and compositions thereof. Laboratory apparatus and instruments; photographic machines and apparatus; cinematographic machines and apparatus; optical machines and apparatus; measuring or testing machines and instruments; power distribution or control machines and apparatus; rotary converters; phase modifiers; solar batteries; batteries and cells; electric or magnetic meters and testers; electric wires and cables; telecommunication machines and apparatus; personal digital assistants; electronic machines, apparatus and their parts; semi-conductor elements; electronic circuits, not including those recorded with computer programs; magnetic cores; resistance wires; electrodes, other than welding electrodes or medical electrodes; circuit board for power modules.
43.
SEMICONDUCTOR LIGHT RECEIVING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT RECEIVING ELEMENT
The present invention provides: a semiconductor light receiving element which has a high breakdown voltage, while achieving adequate capacitance and dark current values at the same time; and a method for manufacturing a semiconductor light receiving element. A semiconductor light receiving element according to the present invention has an n-type InP substrate, a buffer layer on the n-type InP substrate, an n-type InGaAs light absorption layer on the buffer layer, and an InP window layer on the n-type InGaAs light absorption layer, and a p-type impurity diffusion region that reaches the upper part of the n-type InGaAs light absorption layer is formed in the InP window layer. This semiconductor light receiving element is characterized in that the n-type InGaAs light absorption layer has an average n-type impurity concentration of 2.5 × 1014/cm3to 1.0 × 1015/cm3 inclusive.
H10F 30/20 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors
44.
LIGHT-EMITTING ELEMENT AND METHOD OF PRODUCING LIGHT-EMITTING ELEMENT
Provided is a light-emitting element having excellent close adherence between a protective film and a semiconductor layer. The light-emitting element is a flip chip-type light-emitting element including a buffer layer formed on a main surface of a substrate, an n-type AlGaN layer formed on the buffer layer, and a light-emitting layer and a p-type AlGaN layer formed in order on at least part of the n-type AlGaN layer. An exposed surface of the substrate is present at an end section on the main surface of the substrate. In a cross-section of the light-emitting element, the exposed surface is inclined at an acute angle θs of 45° or less relative to a horizontal line of an interface between the substrate and the buffer layer.
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/12 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure de relaxation des contraintes, p.ex. couche tampon
45.
SILVER POWDER, MIXED SILVER POWDER, AND CONDUCTIVE PASTE, AND METHOD FOR MANUFACTURING SILVER POWDER AND MIXED SILVER POWDER
Obtained are a silver powder and a mixed powder that can achieve low-resistance electrode wiring when printing wires, and a conductive paste using these powders. The silver powder includes, as 20% or more and less than 95% of all particles, silver particles whose main region of the silver particle upper surface is the (111) plane or a plane close to the (111) plane. The KAM value of the silver particles is 0.4 or more and 1.0 or less.
B22F 9/18 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques
B22F 1/052 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules caractérisées par un mélange de particules de dimensions différentes ou par la distribution granulométrique des particules
B22F 1/145 - Traitement chimique, p. ex. passivation ou décarburation
46.
OPTICAL SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME
This invention improves the characteristics of an optical semiconductor element. An optical semiconductor element according to the present invention comprises: a first active layer having a light-reception/emission wavelength of a first wavelength; a tunnel junction layer on the first active layer; and a second active layer on the tunnel junction layer, the second active layer having a light-reception/emission wavelength of a second wavelength. The first active layer and the second active layer include Sb. The tunnel junction layer has a p-type InAs layer and an n-type InAs layer.
H01L 33/04 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure à effet quantique ou un superréseau, p.ex. jonction tunnel
H01L 31/10 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails dans lesquels le rayonnement commande le flux de courant à travers le dispositif, p.ex. photo-résistances caractérisés par au moins une barrière de potentiel ou une barrière de surface, p.ex. photo-transistors
H01L 33/08 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une pluralité de régions électroluminescentes, p.ex. couche électroluminescente discontinue latéralement ou région photoluminescente intégrée au sein du corps semi-conducteur
H01L 33/30 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique
47.
SILVER-PLATED MATERIAL, TERMINAL FOR ELECTRIC CONTACT, AND METHOD FOR PRODUCING SILVER-PLATED MATERIAL
This silver-plated material comprises a silver-plated layer on a base material. The surface of the base material is copper or a copper alloy. The silver-plated layer contains selenium. The Vickers hardness of the silver-plated material in the initial state and the Vickers hardness of the silver-plated material after being heated at 100°C for 168 hours are both 120 HV or more. The glossiness of the silver plated layer is 1.0 or more.
[Problem] To efficiently obtain, from a lithium-ion-containing aqueous solution containing anions, a lithium-ion-containing aqueous solution which has a reduced content of anions other than hydroxide ions. [Solution] This method for treating lithium-ion-containing aqueous solution uses an electrodialyzer equipped with a raw-solution tank separated from adjacent tanks on both sides by a cation-exchange membrane and an anion-exchange membrane respectively, a first adjoining tank which adjoins the raw-solution tank with the cation-exchange membrane interposed therebetween, and a second adjoining tank which adjoins the raw-solution tank with the anion-exchange membrane interposed therebetween, wherein: a lithium-ion-containing aqueous solution which contains lithium ions, cations other than lithium ions, and anions is put in the raw-solution tank; water or an aqueous solution is put in the first adjoining tank and the second adjoining tank; a voltage is applied between a cathode inside the first adjoining tank and an anode inside the second adjoining tank; and, while the pH of the liquid inside the raw-solution tank is kept at 10.5 or higher, lithium ions inside the raw-solution tank are caused to move into the first adjoining tank through the cation-exchange membrane.
C02F 1/469 - Traitement de l'eau, des eaux résiduaires ou des eaux d'égout par des procédés électrochimiques par séparation électrochimique, p. ex. par électro-osmose, électrodialyse, électrophorèse
The purpose of the present invention is to provide a copper-containing silver powder capable of reducing line resistance of a conductive film. The present invention pertains to a copper-containing silver powder. In a differential curve of a TMA curve from 100°C to 600°C obtained by thermomechanical analysis in which the temperature of the copper-containing silver powder is raised at a temperature increase rate of 10°C/min, the copper-containing silver powder has an expansion peak and has, on the lower temperature side from the expansion peak, a first shrinkage peak at which the dTMA is -0.10%/min or less.
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 1/10 - Poudres métalliques contenant des agents lubrifiants ou liantsPoudres métalliques contenant des matières organiques
B22F 9/00 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet
B22F 9/24 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques à partir de mélanges métalliques liquides, p. ex. de solutions
The present invention improves the characteristics of an AlN template substrate. An AlN template substrate according to the present invention is characterized in that: the AlN template substrate has an AlN layer formed on a main surface of a sapphire substrate; the main surface of the sapphire substrate has a C-plane inclined at an off angle of 0.02°-0.35°; and a step linear rate is at least 90%, the step linear rate being obtained by dividing the linear distance connecting a first contact point which is between a ridge line of a step in an AFM image of a surface of the AlN layer and an edge of the AFM image, and a second contact point by the length of the ridge line of the step extending from the first contact point to the second contact point.
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
51.
Silver powder, method of producing silver powder, and conductive paste
Provided are a silver powder that can reduce line resistance and a method of producing the same. The silver powder has a diameter at a cumulative value of 50% of 3 μm or more and a ratio of particles of 10 μm or larger of 10% or less. The silver powder includes flake-like particles having a major axis of 6 μm or more and irregularly shaped particles having a major axis of less than 6 μm, an average aspect ratio that is a ratio of average major axis relative to average thickness of the flake-like particles is 8 or more, and a shape factor that is a ratio of area of a circle having average maximum length of the irregularly shaped particles as a diameter relative to average particle area of the irregularly shaped particles is 1.7 to 1.9. Ignition loss is 0.1 wt % to 0.4 wt %.
H01B 1/22 - Matériau conducteur dispersé dans un matériau organique non conducteur le matériau conducteur comportant des métaux ou des alliages
B22F 1/052 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules caractérisées par un mélange de particules de dimensions différentes ou par la distribution granulométrique des particules
B22F 1/10 - Poudres métalliques contenant des agents lubrifiants ou liantsPoudres métalliques contenant des matières organiques
B22F 1/145 - Traitement chimique, p. ex. passivation ou décarburation
B22F 9/04 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques à partir d'un matériau solide, p. ex. par broyage, meulage ou écrasement à la meule
B22F 9/24 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques à partir de mélanges métalliques liquides, p. ex. de solutions
52.
SILVER-PLATED MATERIAL PRODUCTION METHOD AND SILVER-PLATED MATERIAL
A silver-plated material has excellent abrasion resistance and has such performance that the resistance to peeling of a silver coating layer is maintained high even when the silver-plated material is exposed to a high temperature and high humidity environment. The silver-plated material is obtained by a production method, in which when a silver plating layer is formed on a material by an electroplating method using a cyanide-containing silver plating solution, as the silver plating solution, an aqueous solution, in which a benzothiazole or a derivative thereof, and a selenium-containing substance are dissolved, a selenium concentration is 0.9 to 120 mg/L, and a molar ratio of selenium to the benzothiazole or the derivative thereof is 0.08×10−3 or more, is used. As a substance corresponding to the benzothiazole or the derivative thereof, for example, mercaptobenzothiazole or a derivative thereof can be used.
The purpose of the present invention is to provide a copper-containing silver powder capable of reducing line resistance of an electroconductive film. The present invention is a copper-containing silver powder having a true density of less than 10 g/cm3 and a copper content of 10 to 10,000 ppm.
B22F 9/00 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet
B22F 9/24 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques à partir de mélanges métalliques liquides, p. ex. de solutions
Provided are an ultraviolet light-emitting element that enables high light emission output and a method of producing the same. The light-emitting element (100) includes, in stated order: an n-type semiconductor layer (3) formed of AlxGa1-xN having an Al composition ratio x; a quantum well-type light-emitting layer (4); a p-type electron blocking layer (6) formed of AlyGa1-yN having an Al composition ratio y; a p-type cladding layer (7) formed of AlzGa1-zN having an Al composition ratio z; and a p-type GaN contact layer (8). The p-type electron blocking layer (6) has an Al composition ratio y of 0.35 to 0.45 and a thickness of 11 nm to 70 nm. The total thickness of the p-type electron blocking layer (6) and p-type cladding layer (7) is 73 nm to 100 nm. The thickness of the p-type GaN contact layer (8) is 5 nm to 15 nm.
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/06 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure à effet quantique ou un superréseau, p.ex. jonction tunnel au sein de la région électroluminescente, p.ex. structure de confinement quantique ou barrière tunnel
H01L 33/14 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure contrôlant le transport des charges, p.ex. couche semi-conductrice fortement dopée ou structure bloquant le courant
55.
Gd-Co-BASED METALLIC POWDER, METHOD FOR PRODUCING SAME, ELECTROCONDUCTIVE MOLDED BODY, AND THERMOELECTRIC CONVERSION ELEMENT
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 1/05 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules
B22F 9/04 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques à partir d'un matériau solide, p. ex. par broyage, meulage ou écrasement à la meule
Provided are a method of producing single crystal AlN, single crystal AlN, and a single crystal AlN production apparatus with which single crystal AlN can be cheaply and continuously produced. The method of producing single crystal AlN includes a melt formation step of heating and melting an alloy to form a melt of the alloy and a deposition step of cooling a portion of the melt and providing a temperature gradient in the melt while causing deposition of single crystal AlN. In the deposition step, a nitrogen-containing gas is brought into contact with a high-temperature portion of the melt and a single crystal AlN seed crystal or a substrate for crystal growth is held in a low-temperature portion of the melt so as to continue to take nitrogen into the melt in the high-temperature portion while causing deposition of single crystal AlN.
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
57.
COMPOSITE MATERIAL, METHOD FOR PRODUCING THE COMPOSITE MATERIAL, AND TERMINAL
There is provided a composite material having a composite film on a substrate, the composite film including a silver layer that contains carbon particles, wherein a crystallite size of silver of the composite film is 30 to 100 nm and Vickers hardness Hv of the composite film is 75 or more.
Provided are: a solid electrolyte powder which contains 0.7% by mass to 5% by mass of Li, 8% by mass to 60% by mass of Nb, and 1.0% by mass to 30% by mass of P with respect to the solid electrolyte powder, with the content of the non-oxygen remainder, which is the remainder excluding oxygen (O), being 10% by mass or less with respect to the solid electrolyte powder, and which has a crystallite diameter of 100 nm or less; and related art thereof.
H01M 10/0585 - Structure ou fabrication d'accumulateurs ayant uniquement des éléments de structure plats, c.-à-d. des électrodes positives plates, des électrodes négatives plates et des séparateurs plats
C01B 25/45 - Phosphates contenant plusieurs métaux ou un métal et l'ammonium
H01B 1/06 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisésEmploi de matériaux spécifiés comme conducteurs composés principalement d'autres substances non métalliques
H01B 1/10 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisésEmploi de matériaux spécifiés comme conducteurs composés principalement d'autres substances non métalliques sulfures
H01M 4/13 - Électrodes pour accumulateurs à électrolyte non aqueux, p. ex. pour accumulateurs au lithiumLeurs procédés de fabrication
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
[Problem] To provide a silicon oxide-coated soft magnetic powder having a silicon oxide coating with few defects so as to have an excellent insulation property, and having good dispersibility in an aqueous solution, and capable of obtaining a high filling factor when molding a green compact.
[Problem] To provide a silicon oxide-coated soft magnetic powder having a silicon oxide coating with few defects so as to have an excellent insulation property, and having good dispersibility in an aqueous solution, and capable of obtaining a high filling factor when molding a green compact.
[Means for Solution] A highly insulating silicon oxide-coated soft magnetic powder, in which the ratio of a volume-based cumulative 50% particle diameter D50 (HE) according to a dry laser diffraction particle size distribution analysis to the same particle diameter D50 (MT) according to a wet laser diffraction particle size distribution analysis is 0.7 or more, and a coverage ratio R defined by R=Si×100/(Si+M) (wherein Si and M are molar fractions of Si and elements constituting the soft magnetic powder) is 70% or more is obtained by subjecting a slurry containing a soft magnetic powder containing 20 mass % or more of iron and a hydrolysate of a silicon alkoxide to a dispersion treatment when the surface of the soft magnetic powder is coated with the hydrolysate in a mixed solvent of water and an organic substance.
Provided are a silver powder that when used as a conductive paste, has low tendency to experience disconnection even with reduced line width and has lower volume resistivity than is conventionally the case, a conductive paste containing such a silver powder as a conductive filler, and a method of producing such a silver powder. The silver powder is a collection of silver particles that has an apparent density of not less than 8.2 g/cm3 and not more than 9.2 g/cm3 and a value of not less than 1.1 and not more than 1.4 for a ratio of length of a perimeter in a particle cross-section for the silver particles and length of a line circumscribing a periphery of the particle cross-section.
B22F 9/24 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques à partir de mélanges métalliques liquides, p. ex. de solutions
B22F 1/06 - Poudres métalliques caractérisées par la forme des particules
B22F 1/07 - Poudres métalliques caractérisées par des particules ayant une structure nanométrique
Provided is a mixed silver powder capable of reducing the specific resistance of a conductive film. This mixed silver powder comprises first silver particles, second silver particles, and third silver particles that are graded by the long-side length, wherein: the average value of the aspect ratio of the first silver particles is at least 2; the average value of the aspect ratio of the second silver particles is at least 1.5 and less than 2; the average value of the aspect ratio of the third silver particles is less than 1.5; within the mixed silver powder, the proportion by the particle count of the first silver particles is at least 0.5% and no more than 5%, the proportion by the particle count of the second silver particles is at least 10%, and the proportion by the particle count of the third silver particles is at least 15%; the average value of the ratio α, calculated using the formula (1) ratio α = perimeter length of second silver particle / (long-side length of second silver particle × 2 + short-side length of second silver particle × 2), is at least 0.84; and a polyvalent carboxylic acid adheres to the surface of at least one type of silver particles chosen from the group consisting of the first silver particles, the second silver particles, and the third silver particles.
B22F 1/052 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules caractérisées par un mélange de particules de dimensions différentes ou par la distribution granulométrique des particules
B22F 1/102 - Poudres métalliques revêtues de matériaux organiques
B22F 9/00 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet
H01B 1/00 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisésEmploi de matériaux spécifiés comme conducteurs
H01B 1/22 - Matériau conducteur dispersé dans un matériau organique non conducteur le matériau conducteur comportant des métaux ou des alliages
H01B 5/00 - Conducteurs ou corps conducteurs non isolés caractérisés par la forme
H01B 13/00 - Appareils ou procédés spécialement adaptés à la fabrication de conducteurs ou câbles
62.
AQUEOUS SOLUTION CONTAINING LITHIUM AND SILICON, METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY
44SiO (lithium orthosilicate) having good Li ion conductivity and a method for producing the aqueous solution, and a method for producing a positive electrode active material for a lithium secondary battery having a coating layer containing lithium orthosilicate using the aqueous solution. [Solution] An aqueous solution containing lithium and silicon that contains 0.1-3.0 mass% of lithium and 0.1-3.0 mass% of silicon and has a molar ratio Li/Si of lithium and silicon of 3.70-5.20 and an absorbance at a wavelength of 660 nm of 0.10 or less.
Provided is a GaAs wafer having suppressed carrier concentration and low dislocation density, as well as a large proportion of the area of a region with zero dislocation density to the GaAs wafer surface. The GaAs wafer has a silicon concentration of 1.0×1017 cm−3 or more and less than 1.1×1018 cm−3; an indium concentration of 3.0×1018 cm−3 or more and less than 3.0×1019 cm−3; a boron concentration of 2.5×1018 cm−3 or more; a carrier concentration of 1.0×1016 cm−3 or more and 4.0×1017 cm−3 or less; and a proportion of the area of a region with zero dislocation density to the wafer surface of 91.0% or more.
C30B 11/04 - Croissance des monocristaux par simple solidification ou dans un gradient de température, p. ex. méthode de Bridgman-Stockbarger en introduisant dans le bain fondu le matériau à cristalliser ou les réactifs le formant in situ
64.
METAL-CERAMIC BONDED SUBSTRATE AND MANUFACTURING METHOD THEREOF
In a metal-ceramic bonded substrate in which a metal circuit board is bonded to one surface of a ceramic substrate through a brazing material layer, an overhang portion of the brazing material layer overhanging outward by 80 μm or more from a lower edge portion of a side surface of the metal circuit board is formed, the side surface of the metal circuit board has an inclination angle θ of 75° or more with respect to a surface of the ceramic substrate, and the side surface of the metal circuit board and the overhang portion of the brazing material layer are covered with an insulating layer. The metal-ceramic bonded substrate has good partial discharge characteristics and excellent heat cycle resistance and heat resistance.
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
65.
RECYCLED CATHODE MATERIAL PRECURSOR, RECYCLED CATHODE MATERIAL, METHOD FOR MANUFACTURING THEM, AND RECYCLED LITHIUM ION SECONDARY BATTERY
There is provided a recycled cathode material precursor, including: a metal element α consisting of at least one of nickel, cobalt and manganese; and a metal element β consisting of at least one of iron, copper and aluminum, wherein a content of the metal element β is 0.5 to 20% by mass in the recycled cathode material precursor.
C22C 29/12 - Alliages à base de carbures, oxydes, borures, nitrures ou siliciures, p. ex. cermets, ou d'autres composés métalliques, p. ex. oxynitrures, sulfures à base d'oxydes
H01M 4/02 - Électrodes composées d'un ou comprenant un matériau actif
H01M 4/505 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de manganèse d'oxydes ou d'hydroxydes mixtes contenant du manganèse pour insérer ou intercaler des métaux légers, p. ex. LiMn2O4 ou LiMn2OxFy
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p. ex. LiNiO2, LiCoO2 ou LiCoOxFy
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
66.
SILVER POWDER, MIXED SILVER POWDER AND CONDUCTIVE PASTE, AND METHOD FOR PRODUCING SILVER POWDER AND MIXED SILVER POWDER
The present invention provides: a silver powder and a mixed powder, which are each capable of reducing the resistance of an electrode wiring line when the wiring line is printed; and a conductive paste which uses the same. This silver powder contains, with respect to all particles, not less than 20% but less than 95% of silver particles, in each of which the main region of the upper surface of the silver particle is the (111) plane or a plane close to the (111) plane, the silver particles having a KAM value of 0.4 to 1.0 inclusive.
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 1/10 - Poudres métalliques contenant des agents lubrifiants ou liantsPoudres métalliques contenant des matières organiques
B22F 1/052 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules caractérisées par un mélange de particules de dimensions différentes ou par la distribution granulométrique des particules
B22F 9/24 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques à partir de mélanges métalliques liquides, p. ex. de solutions
H01B 1/22 - Matériau conducteur dispersé dans un matériau organique non conducteur le matériau conducteur comportant des métaux ou des alliages
67.
SILVER POWDER AND METHOD OF PRODUCING SILVER POWDER
Provided are a silver powder that is suitable as a conductive filler for a conductive paste that enables low-temperature firing and a method of producing this silver powder. The method of producing a silver powder includes an azole addition step of adding an azole to a silver ammine complex aqueous solution to obtain a first liquid, a reductant addition step of adding a reductant to the first liquid to obtain a second liquid, and a fatty acid addition step of adding a fatty acid to the second liquid to obtain a third liquid. The fatty acid is an unsaturated fatty acid including two or more double bonds.
B22F 9/24 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques à partir de mélanges métalliques liquides, p. ex. de solutions
B22F 1/05 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules
B22F 1/102 - Poudres métalliques revêtues de matériaux organiques
68.
SM-FE-N-BASED MAGNETIC POWDER AND METHOD FOR MANUFACTURING SAME
An Sm—Fe—N-based magnetic powder includes particles containing Sm, Fe, and N as main components. The powder has a composition wherein a molar ratio of Sm to Fe (Sm/Fe) is 0.09 or more and 0.25 or less, a molar ratio of N to Fe (N/Fe) is 0.06 or more and 0.30 or less, and a Ca content in the powder is 0.002 mass % or less. When a cumulative 10% particle diameter is represented by D10, a cumulative 50% particle diameter is represented by D50, and a cumulative 90% particle diameter is represented by D90 in a volume-based particle size distribution according to a laser diffraction/scattering method, D50 is 2.0 to 11.0 μm, and D10, D50, and D90 satisfy a relationship of the following formula: (D90−D10)/D50<1.10. The Sm—Fe—N-based magnetic powder is advantageous in improving coercive force, containing few impurities, and improving the performance and manufacturability of a bonded magnet.
H01F 1/059 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments Va, p. ex. Sm2Fe17N2
B22F 9/08 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques à partir d'un matériau liquide par coulée, p. ex. à travers de petits orifices ou dans l'eau, par atomisation ou pulvérisation
69.
WAFER INSPECTION DEVICE, WAFER INSPECTION SYSTEM, WAFER INSPECTION METHOD, AND PROGRAM
The present invention detects an etch pit with high accuracy. A wafer inspection device (10) is provided with: a data input interface (11) for acquiring parameters used for detecting an etch pit; an image input interface (13) for acquiring a captured image of the surface of a wafer; and a control unit (14) for analyzing the captured image on the basis of the parameters and detecting an etch pit appearing on the surface of the wafer. The captured image is taken by means of an illumination device for supplying light to the wafer and an imaging device for capturing an image of the wafer. The captured image is an image captured such that the long axis of the etch pit is inclined by 30° or more from a line perpendicular to a line connecting the illumination device and the imaging device. The parameters include a luminance threshold value and a range of the inclination angle of the etch pit. The control unit (14) detects, as an etch pit, an isolated point at which the angle with respect to an image reference axis is within the range of the inclination angle.
A perovskite-type composite oxide powder according to the present invention contains La, further contains at least one element selected from the group consisting of Sr, Ca, Co, Ni, Mn, and Fe, has a BET specific surface area less than 6.0 m290B10B50B90A10A50A10509090 respectively represent the volume-based cumulative 10% particle size, cumulative 50% particle size, and cumulative 90% particle size as measured by a particle size distribution measuring device by using a laser diffraction scattering method, and having the suffix "A" indicates a particle size obtained after ultrasonic dispersion and having the suffix "B" indicates particle size before ultrasonic dispersion.
H01M 4/86 - Électrodes inertes ayant une activité catalytique, p. ex. pour piles à combustible
H01M 8/12 - Éléments à combustible avec électrolytes solides fonctionnant à haute température, p. ex. avec un électrolyte en ZrO2 stabilisé
71.
AQUEOUS SOLUTION CONTAINING NIOBIUM POLYACID IONS, LITHIUM IONS, AND PHOSPHATE IONS, PRODUCTION METHOD THEREFOR, AND METHOD FOR PRODUCING ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY
[Problem] To provide an aqueous solution and a production method therefor, the aqueous solution containing niobium polyacid ions, lithium ions, and phosphate ions, suppressing an increase in the specific surface area of a coated positive electrode active material when the surfaces of positive electrode active material particles of a lithium-ion secondary battery are coated with a coating layer containing niobium, lithium, and phosphorus, which are solid electrolytes, and having excellent storage stability. [Solution] This aqueous solution contains niobium polyacid ions, lithium ions, and phosphate ions, wherein: the ratio P/(Nb+Li+P) of the molar number of the phosphorus to the sum of the molar numbers of the niobium, lithium, and phosphorus contained in the aqueous solution is at least 0.04 and less than 0.5; the molar ratio Li/Nb of the lithium and the niobium is greater than 0.6 and at most 2.0; and 0.01-10 mass% of hydrogen peroxide is preferably further contained.
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/505 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de manganèse d'oxydes ou d'hydroxydes mixtes contenant du manganèse pour insérer ou intercaler des métaux légers, p. ex. LiMn2O4 ou LiMn2OxFy
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p. ex. LiNiO2, LiCoO2 ou LiCoOxFy
[Problem] To provide a Cu-Ti-based copper alloy sheet material having all of good strength, bendability, conductivity, fatigue characteristics and spring bending elastic limit and reduced density (specific gravity). [Solution] A copper alloy sheet material comprising, in % by mass, Ti: 1.00-5.00%, Al: 0.50-3.00%, Ag: 0-0.30%, B: 0-0.30%, Co: 0-1.00%, Cr: 0-1.00%, Fe: 0-1.00%, Mg: 0-1.00%, Mn: 0-2.00%, Nb: 0-1.00%, Ni: 0-1.00%, P: 0-0.50%, S: 0-0.20%, Si: 0-0.50%, Sn: 0-2.00%, V: 0-1.00%, Zn: 0-3.00%, Zr: 0-1.00% and a rare earth element: 0-3.00%, the total of elements excluding the above elements and Cu: 0.50% or less, Ti/Al being 1.50 or more with the balance substantially being Cu, and having an average crystal grain size, a number density of coarse deposit particles, a tensile strength of LD and a spring bending elastic limit of TD within predetermined ranges.
C22C 9/01 - Alliages à base de cuivre avec l'aluminium comme second constituant majeur
C22F 1/00 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid
C22F 1/08 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid du cuivre ou de ses alliages
H01B 1/02 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisésEmploi de matériaux spécifiés comme conducteurs composés principalement de métaux ou d'alliages
73.
COPPER ALLOY SHEET MATERIAL, METHOD FOR PRODUCING SAME, AND CURRENT-CARRYING COMPONENT
[Problem] To provide a Cu-Fe-P-based copper alloy sheet material which exhibits excellent strength and electrical conductivity and also has a higher level of bending workability. [Solution] Provided is a copper alloy sheet material which has a chemical composition containing, in terms of mass%, 0.05-1.10% of Fe, 0.02-0.50% of P, 0-0.50% of Mg, 0-0.80% of Ni, 0-0.80% of Sn, 0-0.80% of Zn, and a total of 0-0.10% of elements other than Fe, P, Mg, Ni, Sn, Zn and Cu, with the remainder comprising Cu. The crystallite size, as determined using the Halder-Wagner method on the basis of integrated widths of peaks in an X-Ray diffraction pattern using Cu-Kα rays on a surface of the sheet, is 30 nm or less. The 0.2% proof stress in a direction perpendicular to the direction of rolling is 450 N/mm2 or more.
C22F 1/00 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid
C22F 1/08 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid du cuivre ou de ses alliages
74.
COPPER/CERAMIC CIRCUIT BOARD AND PRODUCTION METHOD THEREFOR
Provided are: an inexpensive copper/ceramic circuit board capable of responding to dimensional accuracy (lower dimensional variation) higher than before; and a manufacturing method therefor. This copper/ceramic circuit board is manufactured by: preparing a copper plate for a circuit pattern and a copper plate for a heat sink pattern, the copper plates each one surface having an arithmetic average roughness Ra of at most 0.1 μm; bonding the other surfaces of the copper plate for the circuit pattern and of the copper plate for the heat sink pattern to one surface and the other surface of a ceramic substrate via a brazing material; then forming etching resists having a circuit pattern shape and a heat sink pattern shape, respectively, on the one surfaces of the copper plate for the circuit pattern and of the copper plate for the heat sink pattern; and etching portions of the copper plate for the circuit pattern and of the copper plate for the heat sink pattern, whereby a circuit pattern copper plate 114 having the circuit pattern shape and a heat sink pattern copper plate 116 having the heat sink pattern shape are bonded to the ceramic substrate 12 via the brazing material 118.
Provided is a composite material in which a composite film that is composed of a silver layer containing metal sulfide particles is formed on a base material, wherein the value X obtained by dividing the arithmetic average roughness Ra of the composite film by the thickness (μm) of the composite film is 0.14 or less.
C25D 15/02 - Procédés combinés électrophorétiques et électrolytiques
H01R 13/03 - Contacts caractérisés par le matériau, p. ex. matériaux de plaquage ou de revêtement
H01R 43/16 - Appareils ou procédés spécialement adaptés à la fabrication, l'assemblage, l'entretien ou la réparation de connecteurs de lignes ou de collecteurs de courant ou pour relier les conducteurs électriques pour la fabrication des pièces de contact, p. ex. par découpage et pliage
76.
ARRANGEMENT STRUCTURE OF SOLID ELECTROLYTE IN ALL-SOLID-STATE CELL, AND BATTERY
36x3+x3+x, where x is 2.0-5.0, and the second solid electrolyte includes sulfide or oxide as a main component. The first solid electrolyte is interposed between the electroconductive material on the high potential side and the second solid electrolyte, and a contact part is provided between the electroconductive material on the high potential side and the first solid electrolyte, and a contact part is provided between the first solid electrolyte and the second solid electrolyte.
C01F 7/54 - Composés doubles contenant à la fois de l'aluminium et des métaux alcalins ou alcalino-terreux
H01B 1/06 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisésEmploi de matériaux spécifiés comme conducteurs composés principalement d'autres substances non métalliques
H01M 10/0585 - Structure ou fabrication d'accumulateurs ayant uniquement des éléments de structure plats, c.-à-d. des électrodes positives plates, des électrodes négatives plates et des séparateurs plats
77.
GALLIUM-CONTAINING SILVER POWDER, METHOD FOR PRODUCING GALLIUM-CONTAINING SILVER POWDER, AND ELECTROCONDUCTIVE PASTE
Provided are a gallium-containing silver powder, and a production method thereof. The gallium-containing silver powder can supply gallium as a p-type impurity in a suitable form, can exhibit low resistance through low-temperature sintering and can exhibit lower electrical resistance compared to a case in which aluminum is added, through high-temperature sintering. The gallium-containing silver powder according to the present invention has a median diameter D50 of 0.2 μm to 5.0 μm in terms of the volume of gallium-containing silver powder as measured by laser diffraction.
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 1/05 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules
B22F 1/17 - Particules métalliques revêtues de métal
B22F 1/107 - Poudres métalliques contenant des agents lubrifiants ou liantsPoudres métalliques contenant des matières organiques contenant des matériaux organiques comportant des solvants, p. ex. pour la coulée en moule poreux ou absorbant
B22F 9/00 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet
H01B 1/00 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisésEmploi de matériaux spécifiés comme conducteurs
H01B 1/22 - Matériau conducteur dispersé dans un matériau organique non conducteur le matériau conducteur comportant des métaux ou des alliages
78.
GALLIUM POWDER, MIXED POWDER, METHOD FOR PRODUCING GALLIUM POWDER DISPERSION, METHOD FOR PRODUCING GALLIUM POWDER, GALLIUM POWDER DISPERSION, AND CONDUCTIVE PASTE
Gallium powder of a small particle size is obtained, and a mixed powder containing said gallium powder that enables making a conductive paste that yields a low-resistance electrode is provided. The gallium powder according to the present invention has an SEM average diameter of from 0.2 μm to 2 μm and a surfactant selected from fatty acids, azole compounds, alkenylsuccinic acids, aliphatic amines, or salts thereof or anhydrides thereof is adhered to the surface of the powder.
There is provided a silver-plated product having a more excellent wear resistance than that of conventional silver-plated products while maintaining the high hardness thereof, and a method for producing the same. In a method for producing a silver-plated product by forming a surface layer of silver on a base material by electroplating in a silver-plating solution which is an aqueous solution containing silver potassium cyanide, potassium cyanide and a mercaptothiazole, the concentration of the mercaptothiazole in the silver-plating solution is not lower than 5 g/L, and the electroplating is carried out at a liquid temperature of not lower than 30° C. and at a current density of 1 to 15 A/cm2.
There is provided a composite material in which an oxygen-containing silver-based coating layer is formed on a base material. the oxygen-containing silver-based coating layer containing silver and having oxygen present in the vicinity of its surface. and the base material comprising copper or copper alloy.
50 obtained by a laser diffraction particle size distribution analysis of 1.5 μm or less to a slurry of a silver powder. The surface of the silver powder is coated with the surface treatment agent. The surface of the silver powder is further coated with a polyvalent carboxylic acid in a step of producing the silver powder.
B22F 1/145 - Traitement chimique, p. ex. passivation ou décarburation
B22F 9/24 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques à partir de mélanges métalliques liquides, p. ex. de solutions
C09C 3/08 - Traitement par des composés organiques de bas poids moléculaire
H01B 1/02 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisésEmploi de matériaux spécifiés comme conducteurs composés principalement de métaux ou d'alliages
82.
PEROVSKITE-TYPE COMPOSITE OXIDE POWDER AND AIR ELECTRODE FOR SOLID OXIDE FUEL CELL AND SOLID OXIDE FUEL CELL USING THE SAME
In a perovskite-type composite oxide powder according to the present invention, the geometric standard deviation value of the maximum Feret diameter of the perovskite-type composite oxide powder calculated by performing image analysis on an SEM image acquired with a scanning electron microscope is equal to or greater than 1.01 and less than 1.60, and when it is assumed that the perovskite-type composite oxide powder is spherical, the ratio (B/A) of an area value B directly calculated by the image analysis to an area value A calculated from the maximum Feret diameter is equal to or greater than 0.7 and less than 1.0. In this way, the perovskite-type composite oxide powder is used as the air electrode material of an SOFC, and thus high conductivity as compared with a conventional air electrode material is obtained.
H01M 4/90 - Emploi de matériau catalytique spécifié
H01M 12/06 - Éléments hybridesLeur fabrication composés d'un demi-élément du type élément à combustible et d'un demi-élément du type élément primaire avec une électrode métallique et une électrode à gaz
09 - Appareils et instruments scientifiques et électriques
11 - Appareils de contrôle de l'environnement
Produits et services
(1) Semi-conductors; semiconductor wafers; semiconductor chips; semiconductor power elements; LED (light emitting diode) chips; Sensors
(2) Furnaces; Industrial furnaces; incinerator, furnaces, other than for laboratory use; Heat treatment furnaces; fittings, shaped, for furnaces; heat treatment equipment for treating metal parts, namely, furnaces and gas generators; Gas burner, heating furnace, non-experimental furnace, incinerator, sintering furnace, blunting furnace, hot air furnace, mobile metal heating furnace, electric furnace.
xyzzAs (where 0.49 ≤ x ≤ 0.55, 0.10 ≤ z < 0.35 and x + y + z = 1), and the developed interfacial area ratio (Sdr) of a light extraction surface of the cladding layer having the second conductivity type is 4.0 or more.
This composite material is used to produce a terminal that has a soldering portion and terminal-engaged portion, wherein a metal coating and a composite coating are formed above a base material to provide the composite material, the metal coating includes at least one of silver and tin, the composite coating is formed from a silver layer containing carbon particles, and a portion in which the metal coating is exposed and a portion in which the composite coating is exposed are present.
C25D 15/02 - Procédés combinés électrophorétiques et électrolytiques
H01H 1/023 - Matériau composite avec un métal noble comme matériau de base
H01H 1/04 - Contacts coopérants en matériaux différents
H01H 1/18 - Contacts caractérisés par la manière dont les contacts coopérants s'engagent en butant l'un contre l'autre avec glissement subséquent
H01R 13/03 - Contacts caractérisés par le matériau, p. ex. matériaux de plaquage ou de revêtement
H01R 43/16 - Appareils ou procédés spécialement adaptés à la fabrication, l'assemblage, l'entretien ou la réparation de connecteurs de lignes ou de collecteurs de courant ou pour relier les conducteurs électriques pour la fabrication des pièces de contact, p. ex. par découpage et pliage
A carbon nanotube collection apparatus includes: a collection room having an opening part communicating with a carbon nanotube production apparatus; a winding member arranged inside the collection room and configured to wind a carbon nanotube passed through the opening part from the carbon nanotube production apparatus to form a carbon nanotube wound body; and a separation mechanism configured to move the carbon nanotube wound body from a base end side toward a tip end side of the winding member to separate the carbon nanotube wound body from the winding member.
B65H 67/04 - Dispositions pour retirer les paquets d'enlèvement une fois garnis et les remplacer par des noyaux, gabarits ou récipients vides aux postes d'enroulage ou d'emmagasinageTransfert du matériau entre les éléments de prise adjacents pleins et vides
A method of separating valuable materials. The method includes a heat treatment step of performing a heat treatment on a lithium-ion secondary battery including valuable materials, a crushing step of crushing a heat-treated product obtained in the heat treatment step, and a classification step including a first classification step of classifying a crushed product obtained in the crushing step into a coarse-particle product and an intermediate product at a classification cut-point of 0.6 mm or greater and 2.4 mm or less, and a second classification step of classifying the intermediate product into a medium-particle product and a fine-particle product at a classification cut-point of 40 μm or greater and 300 μm or less.
Provided are a silver powder having powder physical properties enabling reduction of volume resistivity after firing and a method of producing this silver powder. The silver powder has a tap density of 4.8 g/mL or more, a TAP/D50 value (value determined by dividing the tap density (g/mL) by the volume-based median diameter (μm)) of not less than 7 and not more than 15, and a specific surface area of not less than 0.75 m2/g and not more than 1.3 m2/g.
B22F 1/05 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules
B22F 1/105 - Poudres métalliques contenant des agents lubrifiants ou liantsPoudres métalliques contenant des matières organiques contenant des agents lubrifiants ou liants inorganiques, p. ex. des sels métalliques
B22F 9/04 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques à partir d'un matériau solide, p. ex. par broyage, meulage ou écrasement à la meule
B22F 9/24 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques à partir de mélanges métalliques liquides, p. ex. de solutions
91.
POWDER INCLUDING NIOBIUM COMPLEX AND LITHIUM AND PRODUCTION METHOD THEREOF, AND PRODUCTION METHOD OF LITHIUM SECONDARY BATTERY POSITIVE ELECTRODE ACTIVE MATERIAL HAVING COATED LAYER CONTAINING LITHIUM NIOBATE
A powder contains a niobium complex and lithium, an amount of niobium being 25 mass % or more and 75 mass % or less, a proportion of niobium in metal elements of the powder is 0.775 or more and 0.950 or less in terms of mass ratio. When the powder is dissolved in 8 times its mass of water at 25° C., a niobium content contained in a filtrate thereof is 80 mass % or more of an amount of niobium contained in the powder before dissolution. The powder is obtained by mixing a niobium compound, a lithium compound, an alkali, hydrogen peroxide, and water to obtain an aqueous solution containing a niobium complex and lithium and then drying the solution at a temperature equal to or lower than a decomposition temperature of the niobium complex. The powder is suitable for preparing a lithium niobate precursor solution for coating positive electrode active material particles.
A light-emitting element having high emission output power and light emission efficiency and a method of manufacturing of the same are provided. A light-emitting element according to the present disclosure includes an n-type semiconductor layer; an InAsSbP active layer containing at least In and As on the n-type semiconductor layer; a p-type semiconductor layer that is lattice-matched with the InAsSbP active layer, on the InAsSbP active layer; and a p-type InGaAs window layer that is lattice-mismatched with the p-type semiconductor layer, on the p-type semiconductor layer, wherein the p-type semiconductor layer has a thickness of 20 nm or more and 520 nm or less.
H01L 33/06 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure à effet quantique ou un superréseau, p.ex. jonction tunnel au sein de la région électroluminescente, p.ex. structure de confinement quantique ou barrière tunnel
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/14 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure contrôlant le transport des charges, p.ex. couche semi-conductrice fortement dopée ou structure bloquant le courant
H01L 33/30 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique
93.
ALUMINUM-CERAMIC BONDED SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
There is provided an aluminum-ceramic bonded substrate in which an aluminum plate comprising aluminum alloy is directly bonded to one surface of a ceramic substrate and an aluminum base plate comprising aluminum alloy is directly bonded to the other surface of the ceramic substrate, wherein the aluminum alloy is the aluminum alloy containing 0.05% by mass or more and 3.0% by mass or less of at least one element selected from nickel and iron in total amount, containing 0.01% by mass or more and 0.1% by mass or less of at least one element selected from titanium and zirconium in total amount, and containing 0% by mass or more and 0.05% by mass or less of at least one element selected from boron or carbon in total amount, with a balance being aluminum.
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
B22D 19/02 - Coulée dans, sur, ou autour d'objets formant partie intégrante du produit final pour fabriquer des pièces renforcées
B22D 19/04 - Coulée dans, sur, ou autour d'objets formant partie intégrante du produit final pour raccorder des pièces
B22D 21/00 - Coulée de métaux non ferreux ou de composés métalliques, dans la mesure où leurs propriétés métallurgiques affectent le procédé de couléeUtilisation de compositions appropriées
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
94.
CARRIER CORE MATERIAL AND ELECTROPHOTOGRAPHIC DEVELOPMENT CARRIER USING SAME AND ELECTROPHOTOGRAPHIC DEVELOPER
A carrier core material includes ferrite particles, contains CaSiO3, and has a true density at least equal to 3.5 g/cm3 and at most equal to 4.5 g/cm3. A particle strength index calculated from formula (1) is preferably at most equal to 1.5% by volume. (1): Particle strength index=V2−V1 (In the formula, V1: cumulative value (% by volume) of particle size 22 μm or less in cumulative particle size distribution of carrier core material before crushing test, and V2: cumulative value (% by volume) of particle size 22 μm or less in cumulative particle size distribution of carrier core material after crushing test) Crushing test conditions: 30 g of carrier core material crushed using a sample mill for 60 seconds at a rotational speed of 14000 rpm.
G03G 9/107 - Développateurs avec des particules de toner caractérisés par les particules porteuses ayant des composants magnétiques
G03G 15/08 - Appareils pour procédés électrographiques utilisant un dessin de charge pour développer en utilisant un développateur solide, p. ex. développateur en poudre
95.
COPPER ALLOY SHEET MATERIAL AND METHOD FOR PRODUCING THE COPPER ALLOY SHEET MATERIAL
There is provided a copper alloy sheet material, containing: 0.0005% by mass or more and 0.1% by mass or less of Ni, 0.0005% by mass or more and 0.1% by mass or less of Sn, 100 ppm or less of C, 800 ppm or less of O, 10 ppm or less of H, and 50 ppm or less of Ag, with a balance being Cu and impurities, wherein a total content of Ni and Sn is 0.001% by mass or more and 0.11% by mass or less, and when a content of the impurities is expressed as A to B (ppm) in consideration of a quantitative lower limit of each element (here, A is a total impurity content when a content of elements less than the quantitative lower limit is deemed 0 ppm, and B is a total impurity content when a content of the element less than the quantitative lower limit is deemed the quantitative lower limit of each element), A is 100 or less and B is 250 or less.
C22C 9/06 - Alliages à base de cuivre avec le nickel ou le cobalt comme second constituant majeur
C22C 9/02 - Alliages à base de cuivre avec l'étain comme second constituant majeur
C22F 1/08 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid du cuivre ou de ses alliages
96.
PRODUCTION METHOD FOR SILVER COATING MATERIAL, SILVER COATING MATERIAL, AND ENERGIZING COMPONENT
[Problem] To provide a silver coating material which has favorable peeling resistance of a silver coating layer in a severely bent part and also has favorable durability against fine sliding wear. [Solution] This production method for a silver coating material comprises: a lower silver plating step for forming a lower silver-plated layer on a material using a silver plating solution not containing benzothiazoles and derivatives thereof; an upper silver plating step for forming an upper silver-plated layer on the lower silver-plated layer by means of an electroplating method using a silver plating solution containing at least one substance selected from among benzothiazoles and derivatives thereof; and a heat treatment step for holding the lower silver-plated layer and the upper silver-plated layer in the temperature range of 250-400ºC for 3-60 seconds.
A method of producing a GaAs wafer having excellent OF orientation stability even in a GaAs wafer having an off angle, and a GaAs wafer group are provided. A method of producing a GaAs wafer includes: a grinding step of grinding a peripheral surface of a GaAs ingot including formation of a provisional orientation flat; a slicing step of slicing the GaAs ingot after the grinding step to cut out a material wafer having an off angle; and a cleaving step of applying marking to the material wafer according to an orientation of an orientation flat determined based on the provisional orientation flat and cleaving the material wafer toward a peripheral surface of the material wafer from the marking to form the orientation flat.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
98.
Silver flake powder and production method thereof, and electrically conductive paste
B22F 1/05 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules
B22F 9/04 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques à partir d'un matériau solide, p. ex. par broyage, meulage ou écrasement à la meule
H01B 1/22 - Matériau conducteur dispersé dans un matériau organique non conducteur le matériau conducteur comportant des métaux ou des alliages
Provided are a silver powder and a method of producing the same. The method of producing the silver powder includes a first surface smoothing step of causing fine silver particles having internal voids to mechanically collide with one another; a fine powder removal step of dispersing fine silver particles present after the first surface smoothing step using high-pressure airflow while removing fine powder; and a second surface smoothing step of causing fine silver particles present after the fine powder removal step to mechanically collide with one another.
B22F 9/04 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques à partir d'un matériau solide, p. ex. par broyage, meulage ou écrasement à la meule
B22F 1/05 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules
B22F 1/145 - Traitement chimique, p. ex. passivation ou décarburation
H01B 1/20 - Matériau conducteur dispersé dans un matériau organique non conducteur
100.
METHOD FOR RECOVERING VALUABLE MATERIALS FROM LITHIUM ION SECONDARY BATTERIES
The present invention provides a method for recovering valuable materials from lithium ion secondary batteries, the method comprising: a heat treatment step in which a heat treated material is obtained by subjecting lithium ion secondary batteries to a heat treatment; a first classification step in which a coarse grain product 1 and a fine grain product are obtained by classifying a crushed material that is obtained by crushing the heat treated material; a second classification step in which a coarse grain product 2 and a microfine grain product are obtained by classifying a ground material, which is obtained by grinding the fine grain product, at a classification point that is smaller than the classification point of the first classification step; a first magnetic separation step in which a magnetically attracted material 1 and a magnetically non-attracted material 1 are obtained by magnetically separating the microfine grain product obtained in the second classification step; a second magnetic separation step in which a magnetically attracted material 2 and a magnetically non-attracted material 2 are obtained by magnetically separating the magnetically non-attracted material 1 obtained in the first magnetic separation step; and a recovery step in which valuable materials are recovered from the magnetically attracted material 1 and the magnetically attracted material 2.
C22B 3/22 - Traitement ou purification de solutions, p. ex. de solutions obtenues par lixiviation par des procédés physiques, p. ex. par filtration, par des moyens magnétiques
C22B 7/00 - Mise en œuvre de matériaux autres que des minerais, p. ex. des rognures, pour produire des métaux non ferreux ou leurs composés