The invention relates to a device and a method for applying a voltage to a plurality of silicon rods in a CVD reactor. In each case, a series circuit, in which the silicon rods can be used as resistors, at least one first, at least one second and least one third power supply unit and at least one short-circuit device are provided. The short-circuit unit can be controlled in a suitable way to connect the outer ends of the series circuit to one another and to ground. At least one control unit for controlling the first, second and third power supply units and the short-circuit device is also provided, wherein the first power supply unit has a plurality of first transformers, the outputs of which are each connected to at least one silicon rod in the series, wherein the second power supply unit has a plurality of second transformers, the outputs of which are each connected to at least the same number of silicon rods as the first transformers in the series, specifically in parallel with one or more of the first transformers, and wherein the third power supply unit has outputs which are connected to the series of silicon rods, specifically in parallel with the first and second transformers. The short-circuit device has a line connecting the outer ends of the series circuit, in which line at least one resistor or a secondary side of a transformer and at least one switch are provided. The control unit is connected to at least one ammeter for measuring a current flow through the resistor or to a voltmeter for measuring a voltage on the primary side of the transformer.
H02M 5/12 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant alternatif, p. ex. pour changement de la tension, pour changement de la fréquence, pour changement du nombre de phases sans transformation intermédiaire en courant continu par convertisseurs statiques utilisant des transformateurs pour la transformation de l'amplitude de la tension ou du courant seulement
H02M 5/257 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant alternatif, p. ex. pour changement de la tension, pour changement de la fréquence, pour changement du nombre de phases sans transformation intermédiaire en courant continu par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type thyratron ou thyristor exigeant des moyens d'extinction utilisant uniquement des dispositifs à semi-conducteurs
In the case of a reactor for the deposition of silicon from the gas phase, having a reactor vessel having an interior surface which at least partially bounds a process space and a coating on at least part of the interior surface of the reactor vessel, a cost reduction in manufacture can be achieved by providing a coating which has a first layer which has been applied to at least an upper region of the interior surface of the reactor vessel and has a higher reflectivity for thermal radiation than the uncoated interior surface of the reactor vessel and a second layer which has been applied to a lower region of the interior surface of the reactor vessel and has a higher reflectivity for thermal radiation thaN the uncoated interior surface of the reactor vessel. The second layer is substantially thicker than the first layer. A process for producing the coating is likewise described. The reactor is nevertheless robust and has a long life.
C01B 33/035 - Préparation par décomposition ou réduction de composés de silicium gazeux ou vaporisés autres que la silice ou un matériau contenant de la silice par décomposition ou réduction de composés de silicium gazeux ou vaporisés en présence de filaments chauffés de silicium, de carbone ou d'un métal réfractaire, p. ex. de tantale ou de tungstène, ou en présence de tiges de silicium chauffées sur lesquelles le silicium formé se dépose avec obtention d'une tige de silicium, p. ex. procédé Siemens
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
A crucible for silicon is disclosed, comprising a bottom and at least eight outer side wall sections, which confine a receiving space having an octagonal cross-section. Furthermore, a crucible arrangement for silicon is disclosed, which comprises the above described crucible and an inner side wall element centered with respect to the receiving space, such as to form an annular space, together with the outer side wall sections. Additionally, an optional partition unit for a crucible for silicon is also de- scribed, wherein the partition unit comprises at least one partition element fitted to the shape of the receiving space/annular space, in order to separate the receiving space/annular space into at least two compartments.
A CVD reactor/gas converter, a process for vapor deposition or gas conversion and an electrode unit are described. The CVD reactor/gas converter comprises a casing, which forms a process chamber inside and comprises one casing wall having at least two feedthroughs. At least one pair of first electrode units spaced with respect to each other, which comprise at least one contact part located in the process chamber and a connection part extending through a corresponding feedthrough in the casing wall, as well as at least one pair of spaced second electrode units completely located inside the casing are provided. An electrically conductive bridge element connects the pair of second electrode units inside the casing. In the method for vapor deposition or gas conversion, a plurality of rods and connection elements or of rod pairs connected to each other is positioned in a process chamber in such a way that two first electrode units are electrically serially connected via the rods and the connection elements or via the rod pairs and at least one pair of the second electrode units. A desired gas atmosphere is adjusted inside the process chamber, and a voltage is applied to the two first electrode units, so as to achieve a current flow through the rods and connection elements or through the rod pairs. The electrode unit is provided for use in a CVD reactor/gas converter having a casing, which forms a process chamber inside and comprises a casing wall having at least one feedthrough. The electrode unit comprises an electrically conductive contact part, an electrically conductive connection part connected to the contact part and an electrically conductive plate element having a diameter, which is larger than the diameter of the feedthroughs. The plate element is fixable to the casing wall comprising the feedthroughs from the outside in such a way, that the plate element seals a corresponding feedthrough and directly or indirectly supports the connection part of the electrode unit in an electrically conductive manner.
C23C 16/08 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le dépôt d'un matériau métallique à partir d'halogénures métalliques
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/509 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des décharges à radiofréquence utilisant des électrodes internes
C23C 16/448 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour produire des courants de gaz réactifs, p. ex. par évaporation ou par sublimation de matériaux précurseurs
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
C01B 33/035 - Préparation par décomposition ou réduction de composés de silicium gazeux ou vaporisés autres que la silice ou un matériau contenant de la silice par décomposition ou réduction de composés de silicium gazeux ou vaporisés en présence de filaments chauffés de silicium, de carbone ou d'un métal réfractaire, p. ex. de tantale ou de tungstène, ou en présence de tiges de silicium chauffées sur lesquelles le silicium formé se dépose avec obtention d'une tige de silicium, p. ex. procédé Siemens
C23C 16/46 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour le chauffage du substrat
The invention relates to a method and a device for producing silicon, in particular a method and a device for producing a silicon ingot. In the method for producing silicon, the following steps are provided: introducing a processing gas containing silanes into a processing chamber; heating at least one first actively heatable element that lies within the processing chamber by means of resistance heating or a heating element that lies within the first element to a first temperature that lies in a temperature range in which silicon is deposited on the at least one element from the processing gas in order to form a silicon layer on said element; heating at least one second passively heatable element that lies adjacent to the at least one first element within the processing chamber by means of the at least one first element to a first temperature that lies in a temperature range in which silicon is deposited on the at least one second element from the processing gas in order to form a silicon layer on said second element; subsequently heating the at least one first element, the at least one second element, and/or the silicon layers that are formed on said elements to a second higher temperature that lies in a temperature range in which the silicon layer at least partially melts and flows out from the at least one first and second element in liquid form; and collecting the liquid silicon. The device for producing silicon has the following: at least one first processing chamber; at least one first actively heatable element that lies in the processing chamber; at least one controllable heating device that is suitable for actively heating the at least one first element by means of resistance heating or a heating unit that lies within the first element to first and/or second temperatures, wherein the first temperature lies in a temperature range in which silicon can be deposited on the at least one element from a processing gas containing silanes in order to form a silicon layer on said element, and the second temperature lies in a temperature range in which a silicon layer that is formed on the at least one element at least partially melts and flows out from the at least one element in liquid form; at least one second passively heatable element that lies adjacent to the at least one first element in the processing chamber, said second element being heatable by the first element to the first and/or second temperature; and at least one arrangement for the controlled collection and/or discharge of liquid silicon that flows out from the at least one element.
C01B 33/035 - Préparation par décomposition ou réduction de composés de silicium gazeux ou vaporisés autres que la silice ou un matériau contenant de la silice par décomposition ou réduction de composés de silicium gazeux ou vaporisés en présence de filaments chauffés de silicium, de carbone ou d'un métal réfractaire, p. ex. de tantale ou de tungstène, ou en présence de tiges de silicium chauffées sur lesquelles le silicium formé se dépose avec obtention d'une tige de silicium, p. ex. procédé Siemens
C30B 11/00 - Croissance des monocristaux par simple solidification ou dans un gradient de température, p. ex. méthode de Bridgman-Stockbarger
6.
METHOD AND APPARATUS FOR IGNITING SILICON RODS OUTSIDE A CVD-REACTOR
A method and a device for igniting silicon rods outside a CVD-reactor for preparing silicon rods for subsequent processing in a CVD-reactor are described. In the method, a silicon rod is disposed inside an ignition device, and a first voltage is applied to the silicon rod by means of a first power supply unit, wherein the voltage is sufficient to ignite the silicon rod. Optionally, the silicon rod may be heated by means of a current flow and/or by means of an external heating unit to a temperature within a predetermined temperature range, thereafter. The silicon rod is removed from the ignition device and may be exposed to a depositing process inside a CVD-reactor, thereafter. The ignition of the silicon rod outside the CVD-reactor facilitates a new ignition for the depositing process. The device comprises a casing having a chamber for receiving at least one silicon rod. In the chamber, at least one pair of contact electrodes is arranged, in order to hold at least one silicon rod therebetween. Furthermore, a first power supply unit having at least one transformer is provided, wherein each output of the transformer is connected to one contacting electrode of a pair, respectively. The transformer comprises an open circuit voltage which is sufficiently high, in order to initialize a current flow in the silicon rod.
C01B 33/035 - Préparation par décomposition ou réduction de composés de silicium gazeux ou vaporisés autres que la silice ou un matériau contenant de la silice par décomposition ou réduction de composés de silicium gazeux ou vaporisés en présence de filaments chauffés de silicium, de carbone ou d'un métal réfractaire, p. ex. de tantale ou de tungstène, ou en présence de tiges de silicium chauffées sur lesquelles le silicium formé se dépose avec obtention d'une tige de silicium, p. ex. procédé Siemens
H02M 5/22 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant alternatif, p. ex. pour changement de la tension, pour changement de la fréquence, pour changement du nombre de phases sans transformation intermédiaire en courant continu par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande
G05D 23/19 - Commande de la température caractérisée par l'utilisation de moyens électriques
H02M 5/12 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant alternatif, p. ex. pour changement de la tension, pour changement de la fréquence, pour changement du nombre de phases sans transformation intermédiaire en courant continu par convertisseurs statiques utilisant des transformateurs pour la transformation de l'amplitude de la tension ou du courant seulement
H02M 5/25 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant alternatif, p. ex. pour changement de la tension, pour changement de la fréquence, pour changement du nombre de phases sans transformation intermédiaire en courant continu par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type thyratron ou thyristor exigeant des moyens d'extinction
7.
PROCESS AND APPARATUS FOR MANUFACTURING POLYCRYSTALLINE SILICON INGOTS
The present application describes a process and apparatus for producing polycrystalline silicon ingots. During the process, a crucible is arranged in a process chamber, wherein the crucible is filled with solid silicon material or is being filled with silicon material in the process chamber. The crucible is located with respect to at least one diagonal heater in such a way that the diagonal heater is located laterally offset to and generally above the silicon ingot to be produced. Thereafter, the solid silicon material in the crucible is heated above the melting temperature of the silicon material in order to form molten silicon in the crucible, and thereafter, the silicon material in the crucible is cooled down below the solidification temperature of the molten silicon, therein a temperature profile in the silicon material during the cooling phase is controlled at least partially via the at least one diagonal heater. The apparatus comprises a process chamber, a crucible holder inside the process chamber, and at least one diagonal heater in the process chamber. The diagonal heater is located laterally with respect to the crucible holder and extends generally perpendicular thereto and is spaced from the crucible holder in a vertical direction at such a distance that the diagonal heater is located generally above a polycrystalline silicon ingot to be formed in the crucible. The diagonal heater is stationary with respect to the crucible holder when the process chamber is closed.
The invention relates to a device and method for producing a polycrystalline silicon block in a melting crucible which is disposed in a process chamber and filled with silicon material. The silicon material is melted in the melting crucible in order to form a silicon melt and is then cooled to below the solidification temperature of the silicon. During a section of the process, a plate element which is located in the process chamber and has a through-opening can be disposed above the silicon melt and cooled in the melting crucible to below the solidification temperature of the silicon melt; and a gas flow can be directed at least partially via the at least one through-opening in the plate element onto the surface the silicon melt. Alternatively, a method and a melting crucible arrangement consisting of a melting crucible and a retaining ring are described. The retaining ring can be placed on or above a melting crucible filled with silicon material, such that additional silicon material can be received in the retaining ring such that the additional silicon material is retained above the melting crucible by the retaining ring. During heating of the silicon material in the melting crucible and of the additional silicon material in the retaining ring, a silicon melt is formed in the melting crucible and can then be cooled to below the solidification temperature of the silicon.
C30B 11/04 - Croissance des monocristaux par simple solidification ou dans un gradient de température, p. ex. méthode de Bridgman-Stockbarger en introduisant dans le bain fondu le matériau à cristalliser ou les réactifs le formant in situ
An apparatus and a method for applying a voltage across a plurality of silicon rods (51-54) in a CVD reactor and a CVD reactor are described. The apparatus has a series connection in which the silicon rods may be inserted as resistors, at least one first power supply unit (12), at least one second power supply unit (14), at least one third power supply unit (16), and at least one control unit which is capable of applying a voltage across the silicon rods in the series connection via the first, the second or the third power supply unit. The first power supply unit has a plurality of first transformers (21-24), the outputs of which are each connected with one silicon rod in the series connection and wherein the first transformers have a first open circuit voltage and a first short circuit current. The second power supply unit has a plurality of second transformers (31-32), the outputs of which are connected to the same number of silicon rods as the first transformers in the series connection, in parallel to one or more of the first transformers and wherein the second transformers have a second open circuit voltage and a second short circuit current, wherein the second open circuit voltage is lower than the first open circuit voltage and the second short circuit current is higher than the first short circuit current. The third power supply unit has outputs which are connected with the silicon rods in the series connection in parallel to the first and second transformers and wherein the third power supply unit is capable of providing a current in a voltage range which is below the open circuit voltage of the second transformer, which current is higher than the short circuit current of the second transformer.
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C01B 33/035 - Préparation par décomposition ou réduction de composés de silicium gazeux ou vaporisés autres que la silice ou un matériau contenant de la silice par décomposition ou réduction de composés de silicium gazeux ou vaporisés en présence de filaments chauffés de silicium, de carbone ou d'un métal réfractaire, p. ex. de tantale ou de tungstène, ou en présence de tiges de silicium chauffées sur lesquelles le silicium formé se dépose avec obtention d'une tige de silicium, p. ex. procédé Siemens
An electrode arrangement for use in a CVD-reactor/converter and CVD-reactors/converters are described. The electrode arrangement has a shaft portion of an electrically conducting material, a head portion of an electrically conducting material, which is connected to the shaft portion in an electrically conducting manner, which head portion has a seal surface axially facing towards the shaft portion and a biasing unit. The biasing unit has at least one elastic element and an adjustment unit which may be coupled to the shaft portion, wherein the adjustment unit comprises adjustment means which are capable of compressing the elastic element between two counter surfaces, such that a restoring force of the elastic element acts in an axial direction of the shaft portion, in order to bias the axially facing seal surface at the head portion against a counter seal surface. The CVD-reactor/converter has a process chamber defining a process space, the process chamber comprising at least one through opening in its floor in which an electrode arrangement is received, such that the head portion is at least partially received in the process space, and the shaft portion is at least partially received in the through opening and is arranged outside the process space. The electrode arrangement may be of the above described type or of the type having a shaft portion of a first, electrically conducting material and a head portion of a second, electrically conducting material, wherein the head portion is completely made from the second electrically conducting material, which differs from the first material and which does not negatively influence the process within the CVD-reactor/converter, and wherein the head portion is removably attached in an electrically conducting manner on a first end of the shaft portion.
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
C23C 16/509 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des décharges à radiofréquence utilisant des électrodes internes
C01B 33/035 - Préparation par décomposition ou réduction de composés de silicium gazeux ou vaporisés autres que la silice ou un matériau contenant de la silice par décomposition ou réduction de composés de silicium gazeux ou vaporisés en présence de filaments chauffés de silicium, de carbone ou d'un métal réfractaire, p. ex. de tantale ou de tungstène, ou en présence de tiges de silicium chauffées sur lesquelles le silicium formé se dépose avec obtention d'une tige de silicium, p. ex. procédé Siemens
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
11.
METHOD FOR HYDROGENATING CHLOROSILANES AND CONVERTER FOR CARRYING OUT THE METHOD
The invention relates to a method for hydrogenating chlorosilanes, wherein a gas mixture (50) comprising a chlorosilane gas to be hydrogenated and hydrogen gas is heated in a reactor (3a, 3b, 3c; 13a; 23a) to temperatures in the range between 500 °C and 1800 °C and in this way the chlorosilane gas is at least partially hydrogenated, and wherein for the purpose of heating the gas mixture (50) the reactor (3a, 3b, 3c; 13a; 23a) is heated by means of at least one flame, which is arranged in the surroundings of the reactor (3a, 3b, 3c; 13a; 23a), and to a converter (1) for carrying out the method.
B01J 12/00 - Procédés chimiques généraux faisant réagir des milieux gazeux avec des milieux gazeuxAppareillage spécialement adapté à cet effet
B01J 19/02 - Appareils caractérisés par le fait qu'ils sont construits avec des matériaux choisis pour leurs propriétés de résistance aux agents chimiques
B01J 19/24 - Réacteurs fixes sans élément interne mobile
12.
METHOD FOR MEASURING THE CONVERSION RATE DURING THE REACTION OF SILICON TETRACHLORIDE WITH HYDROGEN TO FORM TRICHLOROSILANE AND HYDROGEN CHLORIDE
The invention is related to a method for measuring the conversion rate of a reaction during the conversion of Silicon tetraxchloride with hydrogen to trichlorsilan and hydrogenchloride in a conversion reactor. It is an object of the invention to develop a method for measuring the conversion rate with a method which can be easily operated, requiring a low machine-aided effort and which is low failure and accident-sensitive. The method operates by measuring the amount of the reaction product hydrogenchloride formed during the conversion in the reactor by discharging a given sample of the reaction product hydrogenchloride from the gas mixture leaving the reactor in a given amount of a sample liquid and subsequent measuring of the pH value of the resulting aqueous Solution of the hydrogenchloride.
A clamping and contacting device for mounting and electrically contacting thin silicon rods in silicon deposition reactors is disclosed, the clamping and contacting device having a rod holder for receiving one end of a thin silicon rod. The rod holder comprises at least three contact elements disposed around a receiving space for the thin silicon rod. Each of the contact elements forms a contact surface facing towards a receiving space for electrically and mechanically contacts the thin silicon rod, wherein the contact surfaces of adjacent contact elements are spaced apart.
The invention relates to an arrangement for measurement of the temperature and of the thickness growth of silicon rods in a silicon deposition reactor, by means of a pyrometer which is located outside the reactor. The aim of the invention is to provide an arrangement which allows continuous temperature measurement and measurement of the thickness growth throughout the entire deposition process, with adequate accuracy. This is achieved in that a contactlessly operating temperature measurement device (4) is provided for the temperature measurement and is arranged outside the silicon deposition reactor in front of a viewing window (2), in that the temperature measurement device (4) can be pivoted horizontally about a rotation axis (5) by means of a rotating drive (9), wherein the pivoting axis (5) runs parallel to the longitudinal axis of the silicon rod (1), and wherein the centre axis (6) of the temperature measurement device runs through the pivoting axis (5).
C01B 33/035 - Préparation par décomposition ou réduction de composés de silicium gazeux ou vaporisés autres que la silice ou un matériau contenant de la silice par décomposition ou réduction de composés de silicium gazeux ou vaporisés en présence de filaments chauffés de silicium, de carbone ou d'un métal réfractaire, p. ex. de tantale ou de tungstène, ou en présence de tiges de silicium chauffées sur lesquelles le silicium formé se dépose avec obtention d'une tige de silicium, p. ex. procédé Siemens
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
G01B 11/08 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des diamètres
G01B 21/08 - Dispositions pour la mesure ou leurs détails, où la technique de mesure n'est pas couverte par les autres groupes de la présente sous-classe, est non spécifiée ou est non significative pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
15.
METHOD FOR SUPPLYING POWER TO A CVD PROCESS IN THE DEPOSITION OF SILICON
The invention, which relates to a method for supplying power to a CVD process in the deposition of silicon, is based on the problem of ensuring rapid and effective heating of the rod pairs at a clearly reduced expenditure, while avoiding complex parallel/serial switching. Said problem is solved in that the rod pairs are electrically connected in series, and each rod pair can be bridged at least partially by a means for electric bridging and the applied electric voltage is applied to at least one rod pair.
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/46 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour le chauffage du substrat
C01B 33/035 - Préparation par décomposition ou réduction de composés de silicium gazeux ou vaporisés autres que la silice ou un matériau contenant de la silice par décomposition ou réduction de composés de silicium gazeux ou vaporisés en présence de filaments chauffés de silicium, de carbone ou d'un métal réfractaire, p. ex. de tantale ou de tungstène, ou en présence de tiges de silicium chauffées sur lesquelles le silicium formé se dépose avec obtention d'une tige de silicium, p. ex. procédé Siemens
The invention relates to an arrangement and a method for phase-fired control. The aim of the invention is to provide a control of this type that allows costs and resources to be reduced in production and function control. To achieve this on the arrangement side, all controllable electric switching elements are linked by means of a common controller that has a first input for a first control signal. To achieve the aim on the method side, the set point value is pre-defined as a first input variable and assigned to means for controlling the controllable electric switching elements, the current flowing through each switching element is measured and transmitted to the means for controlling the switching elements as a respective second input variable, the current value of the voltage in the load is measured and transmitted to the means for controlling the switching elements as a third input variable, and said means for controlling the switching elements controls all switching elements in a targeted manner by means of the first, second and third input variable. A maximum of two switching elements are active at any one time.
brevets