A substrate processing method according to the present invention includes: a preparation step of preparing a substrate that has, on a surface thereof, a first surface which contains Si and a second surface which has a different chemical composition from the first surface and which contains Si; a surface modification step of carrying out a silylation treatment of bringing a silylating agent into contact with the first surface and the second surface and then carrying out a water repellency adjustment treatment of selectively decreasing water repellency of the second surface with respect to the first surface; and a processing step of selectively carrying out a processing treatment with respect to the second surface after the surface modification step.
NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY (Japon)
CENTRAL GLASS COMPANY, LIMITED (Japon)
Inventeur(s)
Nagaki Aiichiro
Okamoto Kazuhiro
Muta Kensuke
Abrégé
A method for producing a compound by using a flow micro reactor (100) includes: a step for introducing a first liquid containing a raw material compound having a fluorocarbon group into a first introduction tube (101) and introducing a second liquid containing an alkali metal cation and a radical anion of a second aromatic compound into a second introduction tube (103), to thereby obtain a first mixed liquid in a first micro mixer (107); a step for obtaining a first reaction product by causing the first mixed liquid to flow in a first tube reactor (109), and introducing an electrophile into a third introduction tube (105), to thereby obtain a second mixed liquid in a second micro mixer (111); and a step for causing the second mixed liquid to flow in a second tube reactor (113) to thereby obtain a second reaction product containing a compound which is formed by replacing, with atomic groups derived from the electrophile, one or more fluorine atoms in the fluorocarbon group in the raw material compound and which contains a fluorine atom.
C07C 17/23 - Préparation d'hydrocarbures halogénés par déshalogénation
C07C 17/20 - Préparation d'hydrocarbures halogénés par remplacement par des halogènes d'atomes d'halogène par d'autres atomes d'halogène
C07C 17/269 - Préparation d'hydrocarbures halogénés par des réactions comportant un accroissement du nombre des atomes de carbone dans le squelette par des réactions de condensation d'hydrocarbures halogénés uniquement
C07C 17/358 - Préparation d'hydrocarbures halogénés par des réactions n'influençant pas le nombre d'atomes de carbone ou d'halogène dans les molécules par isomérisation
C07C 22/08 - Composés cycliques contenant des atomes d'halogène liés à un atome de carbone acyclique ayant une insaturation dans les cycles contenant des cycles aromatiques à six chaînons contenant du fluor
C07C 25/13 - Hydrocarbures halogénés aromatiques monocycliques contenant du fluor
C07C 29/40 - Préparation de composés comportant des groupes hydroxyle ou O-métal liés à un atome de carbone ne faisant pas partie d'un cycle aromatique à six chaînons par des réactions augmentant le nombre d'atomes de carbone avec formation de groupes hydroxyle, ces groupes pouvant être produits par l'intermédiaire de dérivés de groupes hydroxyle, p. ex. du dérivé O-métal par réactions avec des aldéhydes ou des cétones avec des composés contenant des liaisons carbone-métal
C07C 29/58 - Préparation de composés comportant des groupes hydroxyle ou O-métal liés à un atome de carbone ne faisant pas partie d'un cycle aromatique à six chaînons par élimination d'halogène, p. ex. par hydrogénolyse, par coupure
C07C 33/46 - Alcools non saturés halogénés ne contenant que des cycles aromatiques à six chaînons dans la partie cyclique
C07C 35/21 - Composés comportant au moins un groupe hydroxyle ou O-métal lié à un atome de carbone d'un cycle autre qu'un cycle aromatique à six chaînons polycycliques, avec au moins un groupe hydroxyle lié à un cycle non condensé
C07C 41/24 - Préparation d'éthers par des réactions ne formant pas de liaisons sur l'oxygène de la fonction éther par élimination d'atomes d'halogène, p. ex. par élimination d'HCl
C07C 43/225 - Éthers une liaison sur l'oxygène de la fonction éther étant sur un atome de carbone d'un cycle aromatique à six chaînons contenant des atomes d'halogène
C07C 45/45 - Préparation de composés comportant des groupes C=O liés uniquement à des atomes de carbone ou d'hydrogènePréparation des chélates de ces composés par condensation
C07C 47/24 - Composés non saturés comportant des groupes —CHO liés à des atomes de carbone acycliques contenant des atomes d'halogène
C07C 49/255 - Composés non saturés comportant des groupes cétone liés à des atomes de carbone acycliques contenant des groupes éther, des groupes , des groupes ou des groupes
C07C 49/813 - Cétones comportant un groupe cétone lié à un cycle aromatique à six chaînons contenant des atomes d'halogène polycycliques
C07C 67/30 - Préparation d'esters d'acides carboxyliques par modification de la partie acide de l'ester sans introduction d'un groupe ester
C07C 69/65 - Esters contenant des atomes d'halogène d'acides non saturés
C07C 209/74 - Préparation de composés contenant des groupes amino liés à un squelette carboné à partir d'amines, par des réactions n'impliquant pas de groupes amino, p. ex. réduction d'amines non saturées, aromatisation ou substitution du squelette carboné par halogénation, halogénhydratation, déshalogénation ou déshalogénhydratation
C07C 211/29 - Composés contenant des groupes amino liés à un squelette carboné ayant des groupes amino liés à des atomes de carbone acycliques d'un squelette carboné non saturé contenant au moins un cycle aromatique à six chaînons le squelette carboné étant substitué de plus par des atomes d'halogène ou par des groupes nitro ou nitroso
C07C 211/30 - Composés contenant des groupes amino liés à un squelette carboné ayant des groupes amino liés à des atomes de carbone acycliques d'un squelette carboné non saturé contenant au moins un cycle aromatique à six chaînons le cycle aromatique à six chaînons faisant partie d'un système cyclique condensé formé par deux cycles
C07C 211/52 - Composés contenant des groupes amino liés à un squelette carboné ayant des groupes amino liés à des atomes de carbone de cycles aromatiques à six chaînons du squelette carboné ayant des groupes amino liés à un seul cycle aromatique à six chaînons le squelette carboné étant substitué de plus par des atomes d'halogène ou par des groupes nitro ou nitroso
C07C 213/08 - Préparation de composés contenant des groupes amino et hydroxy, amino et hydroxy éthérifiés ou amino et hydroxy estérifiés liés au même squelette carboné par des réactions n'impliquant pas la formation de groupes amino, de groupes hydroxy ou de groupes hydroxy éthérifiés ou estérifiés
C07C 217/84 - Composés contenant des groupes amino et hydroxy éthérifiés liés au même squelette carboné ayant des groupes amino et des groupes hydroxy éthérifiés liés à des atomes de carbone de cycles aromatiques à six chaînons du même squelette carboné ayant des groupes amino et des groupes hydroxy éthérifiés liés à des atomes de carbone de cycles aromatiques à six chaînons non condensés du même cycle aromatique à six chaînons non condensé l'atome d'oxygène d'au moins un des groupes hydroxy éthérifiés étant lié de plus à un atome de carbone acyclique
C07C 231/10 - Préparation d'amides d'acides carboxyliques à partir de composés non prévus dans les groupes
C07C 231/12 - Préparation d'amides d'acides carboxyliques par des réactions n'impliquant pas la formation de groupes carboxamide
C07C 233/11 - Amides d'acides carboxyliques ayant des atomes de carbone de groupes carboxamide liés à des atomes d'hydrogène ou à des atomes de carbone acycliques ayant les atomes d'azote des groupes carboxamide liés à des atomes d'hydrogène ou à des atomes de carbone de radicaux hydrocarbonés non substitués avec des atomes de carbone de groupes carboxamide liés à des atomes de carbone d'un squelette carboné non saturé contenant des cycles aromatiques à six chaînons
C07C 233/12 - Amides d'acides carboxyliques ayant des atomes de carbone de groupes carboxamide liés à des atomes d'hydrogène ou à des atomes de carbone acycliques ayant l'atome d'azote d'au moins un des groupes carboxamide lié à un atome de carbone d'un radical hydrocarboné substitué par des atomes d'halogène ou par des groupes nitro ou nitroso
C07C 253/30 - Préparation de nitriles d'acides carboxyliques par des réactions n'impliquant pas la formation de groupes cyano
C07C 255/32 - Nitriles d'acides carboxyliques ayant des groupes cyano liés à des atomes de carbone acycliques ayant des groupes cyano liés à des atomes de carbone acycliques d'un squelette carboné contenant au moins un cycle aromatique à six chaînons
C07C 269/06 - Préparation de dérivés d'acide carbamique, c.-à-d. de composés contenant l'un des groupes l'atome d'azote ne faisant pas partie de groupes nitro ou nitroso par des réactions n'impliquant pas la formation de groupes carbamate
C07C 271/18 - Esters des acides carbamiques ayant des atomes d'oxygène de groupes carbamate liés à des atomes de carbone acycliques avec les atomes d'azote des groupes carbamate liés à des atomes d'hydrogène ou à des atomes de carbone acycliques à des atomes de carbone de radicaux hydrocarbonés substitués par des atomes d'oxygène liés par des liaisons doubles
C07C 273/18 - Préparation d'urée ou de ses dérivés, c.-à-d. de composés contenant l'un des groupes les atomes d'azote ne faisant pas partie de groupes nitro ou nitroso d'urées substituées
C07C 275/30 - Dérivés d'urée, c.-à-d. composés contenant l'un des groupes les atomes d'azote ne faisant pas partie de groupes nitro ou nitroso ayant des atomes d'azote de groupes urée liés à des atomes de carbone de cycles aromatiques à six chaînons d'un squelette carboné étant substitué de plus par des atomes d'halogène ou par des groupes nitro ou nitroso
C07C 303/40 - Préparation d'esters ou d'amides d'acides sulfuriquesPréparation d'acides sulfoniques ou de leurs esters, halogénures, anhydrides ou amides d'amides d'acides sulfoniques par des réactions n'impliquant pas la formation de groupes sulfonamide
C07C 311/16 - Sulfonamides ayant des atomes de soufre de groupes sulfonamide liés à des atomes de carbone de cycles aromatiques à six chaînons ayant l'atome d'azote d'au moins un des groupes sulfonamide lié à des atomes d'hydrogène ou à un atome de carbone acyclique
C07C 319/14 - Préparation de thiols, de sulfures, d'hydropolysulfures ou de polysulfures de sulfures
C07C 321/28 - Sulfures, hydropolysulfures ou polysulfures ayant des groupes thio liés à des atomes de carbone de cycles aromatiques à six chaînons
C07D 211/18 - Composés hétérocycliques contenant des cycles pyridiques hydrogénés, non condensés avec d'autres cycles avec uniquement des atomes d'hydrogène et de carbone liés directement à l'atome d'azote du cycle ne comportant pas de liaison double entre chaînons cycliques ou entre chaînons cycliques et chaînons non cycliques avec des radicaux hydrocarbonés ou des radicaux hydrocarbonés substitués, liés directement aux atomes de carbone du cycle avec des radicaux hydrocarbonés substitués liés aux atomes de carbone du cycle
C07D 211/52 - Atomes d'oxygène liés en position 4 comportant un radical aryle comme second substituant en position 4
C07D 213/64 - Un atome d'oxygène lié en position 2 ou 6
C07D 279/28 - Thiazines-1, 4Thiazines-1, 4 hydrogénées condensés avec des carbocycles ou avec des systèmes carbocycliques condensés en [b, e] avec deux cycles à six chaînons avec des atomes de carbone liés directement à l'atome d'azote du cycle avec des radicaux hydrocarbonés, substitués par des radicaux amino, liés à l'atome d'azote du cycle avec d'autres substituants liés au système cyclique
COMPOUND, POLYMER HAVING UNIT DERIVED FROM SAID COMPOUND, PHOTOSENSITIVE RESIN COMPOSITION CONTAINING SAID POLYMER, ADHESIVE COMPRISING SAID PHOTOSENSITIVE RESIN COMPOSITION, CURED PRODUCT OBTAINED BY CURING SAID PHOTOSENSITIVE RESIN COMPOSITION, AND ELECTRONIC DEVICE PROVIDED WITH SAID CURED PRODUCT
The purpose of the present disclosure is to provide a compound capable of providing a polymer having both good thermal stability and compatibility, a polymer having a unit derived from the compound, a photosensitive resin composition containing the polymer, an adhesive comprising the photosensitive resin composition, a cured product obtained by curing the photosensitive resin composition, and an electronic device provided with the cured product. The present disclosure relates to a compound represented by general formula (1).
C08F 32/00 - Homopolymères ou copolymères de composés cycliques ne contenant pas de radicaux aliphatiques non saturés dans une chaîne latérale et contenant une ou plusieurs liaisons doubles carbone-carbone dans un système carbocyclique
C08G 61/00 - Composés macromoléculaires obtenus par des réactions créant une liaison carbone-carbone dans la chaîne principale de la macromolécule
A dry etching method including reacting silicon oxide with: gaseous hydrogen fluoride and a gaseous organic amine compound; a hydrogen fluoride salt of a gaseous organic amine compound; or gaseous hydrogen fluoride, a gaseous organic amine compound, and a hydrogen fluoride salt of a gaseous organic amine compound. The organic amine compound is an organic amine mixture containing at least two compounds represented by the following formula (1):
A dry etching method including reacting silicon oxide with: gaseous hydrogen fluoride and a gaseous organic amine compound; a hydrogen fluoride salt of a gaseous organic amine compound; or gaseous hydrogen fluoride, a gaseous organic amine compound, and a hydrogen fluoride salt of a gaseous organic amine compound. The organic amine compound is an organic amine mixture containing at least two compounds represented by the following formula (1):
R1—N═R2R3 (1)
A dry etching method including reacting silicon oxide with: gaseous hydrogen fluoride and a gaseous organic amine compound; a hydrogen fluoride salt of a gaseous organic amine compound; or gaseous hydrogen fluoride, a gaseous organic amine compound, and a hydrogen fluoride salt of a gaseous organic amine compound. The organic amine compound is an organic amine mixture containing at least two compounds represented by the following formula (1):
R1—N═R2R3 (1)
wherein N is a nitrogen atom; R1 is a C1-C10 hydrocarbon group optionally having a ring, a heteroatom, or a halogen atom; R2 and R3 are each a hydrogen atom or a C1-C10 hydrocarbon group optionally having a ring, a heteroatom, or a halogen atom; provided that the hydrocarbon group, when it has a carbon number of 3 or more, may have a branched chain structure or a ring structure.
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
This method for producing an imidic acid represented by general formula [1] or an imidic acid salt has a reaction step in which a phosphoryl isocyanate represented by general formula [2] and a compound represented by general formula [3] are reacted with each other, and a basic compound is present during the reaction step and/or after the reaction step.
This cell culture kit (100) is provided with a culture vessel (110), a spacer (130), and a lid (150). The culture vessel (110) has therein a culture space (111) for culturing cells, and includes an opening (114a) that communicates with the culture space (111). The spacer (130) is a cylinder with an open top and bottom, and is removably stored in the culture space (111). The lid (150) can be placed on the spacer (130). The spacer (130) is taller than the culture space (111).
METHOD FOR PRODUCING FILM SUBSTRATE FOR CELL CULTURE, FILM SUBSTRATE FOR CELL CULTURE, QUALITY MANAGEMENT METHOD, PACKAGE, CELL SHEET-BEARING FILM SUBSTRATE, METHOD FOR PRODUCING CELL SHEET-BEARING FILM SUBSTRATE, FROZEN PRODUCT OF CELL SHEET-BEARING FILM SUBSTRATE, METAL FOIL-ATTACHED FILM SUBSTRATE, PACKED BODY, AND METHOD FOR PRODUCING PACKED BODY
A method according to the present invention for producing a film substrate for cell culture comprises: a step for performing, under an inert gas atmosphere, a first plasma treatment on a culture surface of a film substrate for cell culture that has a culture surface on at least one surface; and, after the step for performing the first plasma treatment, a step for performing a second plasma treatment under an oxygen atom-containing gas atmosphere.
This cell culture kit (100) is provided with a culture vessel (110) and a culture sheet (150). The culture sheet (150) is a scaffold material for culturing cells. The culture container (110) has therein an accommodation space, in which the culture sheet (150) is accommodated, and includes an opening that communicates with the accommodation space. The culture container (110) includes a bottom part (112) on which the culture sheet is placed, and a side wall part (113) extending upward from the bottom part (112). The culture sheet (150) has a shape and size such that when placed on the bottom part (112) a gap is formed between the outer edge part of the culture sheet (150) and the side wall part (113).
C12M 3/00 - Appareillage pour la culture de tissus, de cellules humaines, animales ou végétales, ou de virus
9.
FILM SUBSTRATE FOR CELL CULTURE, PACKAGE, FILM SUBSTRATE WITH CELL SHEET, FROZEN PRODUCT OF FILM SUBSTRATE WITH CELL SHEET, METHOD FOR PRODUCING FILM SUBSTRATE FOR CELL CULTURE, AND METHOD FOR PRODUCING FILM SUBSTRATE WITH CELL SHEET
A film substrate for cell culture according to the present invention has a culture surface on at least one surface. In the culture surface, the polar component of surface free energy determined on the basis of the Owens-Wendt method is 10.0 mJ/m2 or more.
The present disclosure provides a trifluoromethanesulfonylating agent composition containing a compound represented by Formula (1) or (11) described in the specification, and a method for producing a trifluoromethanesulfonyloxy compound or a method for producing a trifluoromethanesulfonyl compound, which includes reacting the trifluoromethanesulfonylating agent composition with a compound represented by Formula (2) described in the specification, or a specific substrate.
C07C 303/36 - Préparation d'esters ou d'amides d'acides sulfuriquesPréparation d'acides sulfoniques ou de leurs esters, halogénures, anhydrides ou amides d'amides d'acides sulfoniques
C07C 231/02 - Préparation d'amides d'acides carboxyliques à partir d'acides carboxyliques ou à partir de leurs esters, anhydrides ou halogénures par réaction avec de l'ammoniac ou des amines
C07D 209/08 - IndolesIndoles hydrogénés avec uniquement des atomes d'hydrogène ou des radicaux ne contenant que des atomes d'hydrogène et de carbone, liés directement aux atomes de carbone de l'hétérocycle
C07D 209/88 - CarbazolesCarbazoles hydrogénés avec des hétéro-atomes ou des atomes de carbone comportant trois liaisons à des hétéro-atomes avec au plus une liaison à un halogène, p. ex. radicaux ester ou nitrile, liés directement aux atomes de carbone du système cyclique
C07D 213/68 - Un atome d'oxygène lié en position 4
The present disclosure aims to provide a surface treatment method using a gas composition capable of removing a metal nitride at low temperatures without using plasma. The present disclosure relates to a surface treatment method including bringing a β-diketone and NO2 into contact with a surface of a workpiece.
Provided are a nonaqueous electrolyte solution containing: (I) a compound represented by Formula (1) described in the specification (for example, a compound represented by the following Formula (a-1)); (II) a solute; and (III) a nonaqueous organic solvent, a nonaqueous electrolyte solution and a nonaqueous electrolyte solution battery that can improve high-temperature cycle characteristics and suppress an increase in battery resistance by using the compound represented by Formula (1) and an additive for nonaqueous electrolyte solution, and a compound and an additive for nonaqueous electrolyte solution that can be suitably used in the nonaqueous electrolyte solution described above.
Provided are a nonaqueous electrolyte solution containing: (I) a compound represented by Formula (1) described in the specification (for example, a compound represented by the following Formula (a-1)); (II) a solute; and (III) a nonaqueous organic solvent, a nonaqueous electrolyte solution and a nonaqueous electrolyte solution battery that can improve high-temperature cycle characteristics and suppress an increase in battery resistance by using the compound represented by Formula (1) and an additive for nonaqueous electrolyte solution, and a compound and an additive for nonaqueous electrolyte solution that can be suitably used in the nonaqueous electrolyte solution described above.
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
H01M 10/0567 - Matériaux liquides caracterisés par les additifs
H01M 10/0568 - Matériaux liquides caracterisés par les solutés
H01M 10/0569 - Matériaux liquides caracterisés par les solvants
13.
ETCHING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, ETCHING APPARATUS, AND ETCHING GAS COMPOSITION
The purpose of the present invention is to provide: an etching method exhibiting an excellent etching rate with respect to silicon; a method for manufacturing a semiconductor device; an etching apparatus; and an etching gas composition. The present invention pertains to an etching method for etching silicon by using a plasma gas obtained by converting an etching gas composition containing fluorine gas into plasma.
Disclosed is a nonaqueous electrolyte solution for a nonaqueous electrolyte battery that comprises at least one of a positive electrode that contains a layered rock salt type positive electrode active material having a density of an active material layer of a specific value or more, a positive electrode that contains an olivine type positive electrode active material, a positive electrode that contains a spinel type positive electrode active material, a negative electrode that contains a graphite negative electrode active material, a negative electrode that contains an Si-containing negative electrode active material and graphite, and a negative electrode that contains a titanium-containing oxide negative electrode active material, the electrodes being set forth in the description. The nonaqueous electrolyte solution contains (I) a solute, (II) a nonaqueous organic solvent, and (III) a compound represented by general formula (1) that is set forth in the description. Also disclosed are: a nonaqueous electrolyte battery which comprises at least one of the above-described electrodes, and the above-described nonaqueous electrolyte solution; and a method for producing the nonaqueous electrolyte battery.
This nonaqueous electrolyte solution contains (I) a solute, (II) a nonaqueous organic solvent, (III) tris (1,1,1,3,3,3-hexafluoro-2-propyl) phosphite, and (IV) fluoroethylene carbonate. This nonaqueous electrolyte battery includes the nonaqueous electrolyte solution. This method for producing the nonaqueous electrolyte battery includes a step for injecting the nonaqueous electrolyte solution.
The method for manufacturing a substrate of the present invention includes: a preparation step of preparing a substrate having at least a first surface containing a silicon and a second surface containing a germanium-containing oxide; a silylation treatment step in which a silylating agent is brought into contact with at least the first surface; and an etching step in which the second surface is selectively etched with respect to the first surface by performing an etching treatment in which an etching solution containing hydrogen fluoride, water, and alcohol is brought into contact with the second surface.
Provided are: a non-aqueous electrolyte comprising (I) a solute, (II) a non-aqueous organic solvent, (III) a compound represented by general formula (1), and (IV) fluoroethylene carbonate, wherein the mass ratio (IV)/(III) of said (IV) to said (III) is at least 1.1; a non-aqueous electrolyte battery comprising said non-aqueous electrolyte; and a method for manufacturing a non-aqueous electrolyte battery, the method comprising a step for injecting said non-aqueous electrolyte. In general formula (1), Rs each independently represent a hydrogen atom or an organic group. Here, at least one R has a fluorine atom.
H01M 10/0568 - Matériaux liquides caracterisés par les solutés
H01M 10/0569 - Matériaux liquides caracterisés par les solvants
18.
FROZEN PRODUCT OF THREE-DIMENSIONAL CELL CULTURE, CONTAINER CONTAINING FROZEN PRODUCT OF THREE-DIMENSIONAL CELL CULTURE, CELL FREEZING KIT, CRYOPRESERVATION LIQUID, METHOD FOR PRODUCING FROZEN PRODUCT OF THREE-DIMENSIONAL CELL CULTURE, METHOD FOR USING FROZEN PRODUCT OF THREE-DIMENSIONAL CELL CULTURE, AND METHOD FOR USING CRYOPRESERVATION LIQUID
A frozen product of a three-dimensional cell culture according to the present invention comprises: a three-dimensional cell culture having a cell-to-cell connection structure; and a cryopreservation liquid. The cryopreservation liquid contains a calcium salt and water, wherein the content of the calcium salt is 3.5 ppm to 500 ppm (both inclusive) in terms of calcium ion on the basis of the total weight of the cryopreservation liquid.
One embodiment of the present disclosure is a solvent composition that includes a compound represented by the following general formula. R1222Cl, R2, R3, and R4are each independently selected from among fluorine and chlorine, and, when R122, at least two of R2, R3, and R4are fluorine. At least one of R2, R3, and R4may be different from at least one of the other two. At least one of R2, R3, and R4 may be different from at least one of the other two.
C08L 27/12 - Compositions contenant des homopolymères ou des copolymères de composés possédant un ou plusieurs radicaux aliphatiques non saturés, chacun ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par un halogèneCompositions contenant des dérivés de tels polymères non modifiées par un post-traitement chimique contenant du fluor
C07C 43/23 - Éthers une liaison sur l'oxygène de la fonction éther étant sur un atome de carbone d'un cycle aromatique à six chaînons contenant des groupes hydroxyle ou O-métal
Provided are: a nonaqueous electrolyte containing (I) a solute, (II) a nonaqueous organic solvent, and (III) a compound represented by general formula (1) described in the specification; a nonaqueous electrolyte battery comprising at least a positive electrode, a negative electrode, and the nonaqueous electrolyte; a method for manufacturing the nonaqueous electrolyte battery, the method comprising a step for injecting the nonaqueous electrolyte; a compound represented by general formula (1) described in the specification; and a method for producing a compound represented by general formula (1A) described in the specification.
The present invention is a resin film including a resin layer having a first surface including a region on which cultured cells are placed, wherein the resin film includes an X-ray contrast material, and has, in the first surface, a non-X-ray contrast material-containing region that does not contain any X-ray contrast material.
A61L 31/06 - Matériaux macromoléculaires obtenus autrement que par des réactions faisant intervenir uniquement des liaisons non saturées carbone-carbone
A61L 31/12 - Matériaux composites, c.-à-d. en couches ou contenant un matériau dispersé dans une matrice constituée d'un matériau analogue ou différent
A61L 31/18 - Matériaux au moins partiellement opaques aux rayons X ou au laser
23.
WATER-REPELLENT FILM–FORMING CHEMICAL SOLUTION, CHEMICAL SOLUTION–FILLED CONTAINER, STORAGE METHOD, AND PRODUCTION METHOD FOR WATER-REPELLENT FILM–FORMING CHEMICAL SOLUTION
A purified water-repellent film–forming chemical solution according to the present invention includes a silylating agent, a solvent having a carbonyl group, and an antioxidant, wherein the number of particles having a particle diameter of 0.2 μm or more in a liquid phase of the water-repellent film–forming chemical solution as determined by particle measurement using a light scattering liquid-borne particle detector is 10 particles or less per 1 mL.
The present disclosure aims to provide a technology capable of etching a film at least containing Si and N in a substrate having a film at least containing Si and O and the film at least containing Si and N while suppressing etching of the film at least containing Si and O. The present disclosure relates to an etching method including bringing (I) HF gas and (II) at least one compound selected from the group consisting of a sulfonyl compound, a carbonyl compound, a sulfonyl isocyanate compound, and an isocyanate compound into contact with a substrate having a film at least containing Si and O and a film at least containing Si and N to etch the film at least containing Si and N.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
25.
METHOD FOR PRODUCING TRIFLUOROMETHANESULFONAMIDE COMPOUND
The present disclosure provides a method for producing a trifluoromethanesulfonamide compound, the method comprising reacting a trifluoromethanesulfonylating agent composition containing a compound represented by general formula (1) described in the specification, with an aromatic amino compound represented by general formula (2) described in the specification and/or an acid salt thereof in the presence of a solvent under acidic conditions.
C07C 303/36 - Préparation d'esters ou d'amides d'acides sulfuriquesPréparation d'acides sulfoniques ou de leurs esters, halogénures, anhydrides ou amides d'amides d'acides sulfoniques
C07C 311/09 - Sulfonamides ayant des atomes de soufre de groupes sulfonamide liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé le squelette carboné étant substitué de plus par au moins deux atomes d'halogène
C07D 209/08 - IndolesIndoles hydrogénés avec uniquement des atomes d'hydrogène ou des radicaux ne contenant que des atomes d'hydrogène et de carbone, liés directement aux atomes de carbone de l'hétérocycle
C07D 209/48 - Iso-indolesIso-indoles hydrogénés avec des atomes d'oxygène en positions 1 et 3, p. ex. phtalimide
C07D 233/56 - Composés hétérocycliques contenant des cycles diazole-1, 3 ou diazole-1, 3 hydrogéné, non condensés avec d'autres cycles comportant deux liaisons doubles entre chaînons cycliques ou entre chaînons cycliques et chaînons non cycliques avec uniquement des atomes d'hydrogène ou des radicaux ne contenant que des atomes d'hydrogène et de carbone, liés aux atomes de carbone du cycle
26.
NONAQUEOUS ELECTROLYTE SOLUTION, NONAQUEOUS ELECTROLYTE BATTERY, AND METHOD FOR PRODUCING NONAQUEOUS ELECTROLYTE BATTERY
Provided are: a nonaqueous electrolyte solution which contains (I) a solute, (II) a nonaqueous organic solvent, and (III) at least one compound that is selected from the group consisting of a compound represented by general formula (1) and a compound represented by general formula (2); a nonaqueous electrolyte battery which includes the nonaqueous electrolyte solution; and a method for producing the nonaqueous electrolyte battery.
The present invention is a surface treatment composition which is supplied as vapor to the surface of a wafer having an uneven pattern on the surface and is used for forming a water-repellent protective film on the surface, the surface treatment composition including a silylating agent and a solvent, in which the silylating agent includes a silicon compound represented by (R1)3Si-X (R1's are each independently a group selected from the group consisting of a hydrocarbon group having 1 to 10 carbon atoms and a hydrocarbon group having 1 to 10 carbon atoms in which some or all hydrogen atoms are substituted with fluorine atoms, and X is an amino group), and in which the solvent includes 75% by mass or more of a hydrocarbon solvent in 100% by mass of the total amount of the solvent.
H01L 21/56 - Encapsulations, p. ex. couches d’encapsulation, revêtements
B05D 1/00 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces
C09D 5/00 - Compositions de revêtement, p. ex. peintures, vernis ou vernis-laques, caractérisées par leur nature physique ou par les effets produitsApprêts en pâte
This non-aqueous electrolytic solution for a non-aqueous electrolytic solution battery comprises a positive electrode that contains a positive electrode active material having an olivine structure, wherein: the non-aqueous electrolytic solution contains an electrolyte and an additive different from the electrolyte; the additive is a compound represented by general formula (1); and the concentration of the additive with respect to the total amount of the non-aqueous electrolytic solution exceeds 1 mass%.
H01M 4/136 - Électrodes à base de composés inorganiques autres que les oxydes ou les hydroxydes, p. ex. sulfures, séléniures, tellurures, halogénures ou LiCoFy
H01M 4/58 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs de composés inorganiques autres que les oxydes ou les hydroxydes, p. ex. sulfures, séléniures, tellurures, halogénures ou LiCoFyEmploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs de structures polyanioniques, p. ex. phosphates, silicates ou borates
H01M 10/054 - Accumulateurs à insertion ou intercalation de métaux autres que le lithium, p. ex. au magnésium ou à l'aluminium
H01M 10/0567 - Matériaux liquides caracterisés par les additifs
29.
METHOD FOR PRODUCING PHOSPHORUS TRIFLUORIDE AND METHOD FOR PRODUCING PHOSPHORUS PENTAFLUORIDE
A method for producing phosphorus trifluoride and a method for producing phosphorus pentafluoride, which have high reaction efficiency, low reaction temperature and an excellent energy efficiency. The method includes: a step of introducing phosphorus trichloride and hydrogen fluoride into a first reactor, and a step of discharging phosphorus trifluoride from the first reactor, the first reactor contains carbon material. The method includes a step of introducing the phosphorus trifluoride obtained above and chlorine into a second reactor, and a step of discharging dichloro-phosphorus trifluoride from the second reactor. The method further includes a step of introducing the dichloro-phosphorus trifluoride obtained above and hydrogen fluoride into a third reactor; and a step of discharging phosphorus pentafluoride from the third reactor. The method further includes a step of introducing the phosphorus pentafluoride obtained above and lithium fluoride into a fourth reactor; and a step of discharging lithium hexafluorophosphate from the fourth reactor.
H01M 10/0568 - Matériaux liquides caracterisés par les solutés
30.
POLYMER, LIQUID REPELLENT MATERIAL CONTAINING SAID POLYMER, PHOTOSENSITIVE COMPOSITION CONTAINING SAID POLYMER, CURED PRODUCT OBTAINED BY CURING SAID PHOTOSENSITIVE COMPOSITION, PATTERN FILM-EQUIPPED SUBSTRATE USING SAID PHOTOSENSITIVE COMPOSITION, METHOD FOR MANUFACTURING SAID PATTERN FILM-EQUIPPED SUBSTRATE, AND IMAGE DISPLAY DEVICE HAVING SAID PATTERN FILM-EQUIPPED SUBSTRATE
Provided are: a polymer that can improve photocurability; a liquid repellent material containing said polymer; a photosensitive composition containing said polymer; a cured product obtained by curing said photosensitive composition; a pattern film-equipped substrate using said photosensitive composition; a method for manufacturing said pattern film-equipped substrate; and an image display device having said pattern film-equipped substrate. The present disclosure relates to a photosensitive composition containing a specific polymer having a thiol group.
C08F 2/50 - Polymérisation amorcée par énergie ondulatoire ou par rayonnement corpusculaire par la lumière ultraviolette ou visible avec des agents sensibilisants
C08G 77/28 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène groupes contenant du soufre
G03F 7/029 - Composés inorganiquesComposés d'oniumComposés organiques contenant des hétéro-atomes autres que l'oxygène, l'azote ou le soufre
G03F 7/031 - Composés organiques non couverts par le groupe
G09F 9/00 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
H05B 33/14 - Sources lumineuses avec des éléments radiants ayant essentiellement deux dimensions caractérisées par la composition chimique ou physique ou la disposition du matériau électroluminescent
H10K 59/122 - Structures ou couches définissant le pixel, p. ex. bords
H10K 59/173 - Affichages à OLED à matrice passive comprenant des bords ou des masques d'ombre
H10K 71/12 - Dépôt d'une matière active organique en utilisant un dépôt liquide, p. ex. revêtement par centrifugation
H10K 71/13 - Dépôt d'une matière active organique en utilisant un dépôt liquide, p. ex. revêtement par centrifugation en utilisant des techniques d'impression, p. ex. l’impression par jet d'encre ou la sérigraphie
H10K 71/20 - Modification de la forme de la couche active dans les dispositifs, p. ex. mise en forme
Provided is a radiation-sensitive resin composition comprising an acid generation agent represented by general formula (AG1). In general formula (AG1), R1and R2each independently represent a fluorine atom or -OR, R is a monovalent organic group, and A+ is a counter cation. Also provided is an acid generation agent represented by general formula (AG1). Further provided is a compound represented by general formula (AG1).
C07C 309/80 - Halogénures d'acides sulfoniques ayant des groupes halogénosulfonyle liés à des atomes de carbone acycliques d'un squelette carboné saturé
Disclosed is an etching method with which at least a part of a second structure of a substrate that includes a first structure and the second structure, which are to be etched by an etching gas, is selectively etched by the etching gas in a state where a protective film is formed on the first structure with use of a gas for forming a protective film, the gas for forming a protective film containing a perfluoroolefin having 2 to 8 carbon atoms.
H01L 21/302 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour changer leurs caractéristiques physiques de surface ou leur forme, p. ex. gravure, polissage, découpage
The method of dry-etching silicon oxide of the present disclosure includes reacting silicon oxide with any one of the following (A) to (C): (A) a gaseous hydrogen fluoride and a gaseous organic amine compound, (B) a gaseous hydrogen fluoride salt of an organic amine compound, and (C) a gaseous hydrogen fluoride, a gaseous organic amine compound, and a gaseous hydrogen fluoride salt of an organic amine compound in a non-plasma state.
C09K 13/04 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/302 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour changer leurs caractéristiques physiques de surface ou leur forme, p. ex. gravure, polissage, découpage
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
34.
TRIFLUOROMETHANESULFONATING AGENT COMPOSITION AND METHOD FOR PRODUCING TRIFLUOROMETHANESULFONYLOXY COMPOUND
The present disclosure provides: a trifluoromethanesulfonating agent composition which contains a specific base and a compound that is represented by general formula (1) set forth in the description; and a method for producing a trifluoromethanesulfonyloxy compound by reacting the trifluoromethanesulfonating agent composition with a compound that is represented by general formula (2) set forth in the description.
C07C 303/28 - Préparation d'esters ou d'amides d'acides sulfuriquesPréparation d'acides sulfoniques ou de leurs esters, halogénures, anhydrides ou amides d'esters d'acides sulfoniques par réaction de composés hydroxy avec des acides sulfoniques ou leurs dérivés
C07C 279/04 - Dérivés de la guanidine, c.-à-d. composés contenant le groupe les atomes d'azote liés par des liaisons simples ne faisant pas partie de groupes nitro ou nitroso ayant des atomes d'azote de groupes guanidine liés à des atomes de carbone acycliques d'un squelette carboné
C07C 309/65 - Esters d'acides sulfoniques ayant des atomes de soufre de groupes sulfo estérifiés liés à des atomes de carbone acycliques d'un squelette carboné saturé
C07D 233/56 - Composés hétérocycliques contenant des cycles diazole-1, 3 ou diazole-1, 3 hydrogéné, non condensés avec d'autres cycles comportant deux liaisons doubles entre chaînons cycliques ou entre chaînons cycliques et chaînons non cycliques avec uniquement des atomes d'hydrogène ou des radicaux ne contenant que des atomes d'hydrogène et de carbone, liés aux atomes de carbone du cycle
C07H 15/203 - Carbocycles monocycliques autres que des cycles cyclohexaneSystèmes carbocycliques bicycliques
35.
PHOTOSENSITIVE COMPOSITION, METHOD FOR MANUFACTURING SUBSTRATE, AND DISPLAY DEVICE
This photosensitive composition contains a polymerizable monomer (A), a photopolymerization initiator (B), a black pigment (C), and a compound (D) having a phosphate ester group. The concentration of the phosphate ester group in the total nonvolatile components of the photosensitive composition is 0.067–0.130 mmol/g.
There is provided a method for producing 1-chloro-2,2-difluoroethane (HCFC-142) with less waste, the method including: (a) a step for reacting HCC-140 with hydrogen fluoride (HF) so as to provide a first composition that contains HCFC-142, hydrogen chloride (HCl), HF, and 1,2-dichloroethylene (HCO-1130); and (e) a step for chlorinating a composition containing HCO-1130, which is contained in the first composition, so as to change HCO-1130 into HCC-140, and subsequently recirculating the resultant composition to the step (a).
Provided is a cleaning liquid having a low global warming potential and having particle removing properties equal to or higher than that of a conventional hydrofluoroether. The present disclosure relates to a cleaning liquid for removing particles. The cleaning liquid contains hydrofluoroether, and the hydrofluoroether is a compound represented by general formula (1).
Provided is a semiconductor device manufacturing method capable of suppressing positional deviation of a bonding member such as a semiconductor chip. The present invention relates to a semiconductor device manufacturing method comprising: a dry film formation step in which a metal and/or a metal oxide-containing paste formed on a bonding member A is dried to form a dry film having a storage modulus of 15 GPa or less; and a temporary bonding step in which a bonding member B is temporarily bonded to the bonding member A by means of the dry film formed by the dry film formation step.
A nonaqueous electrolyte solution containing: at least one selected from the group with a compound represented by Formula described in the specification, and a compound represented by Formula described in the specification; a nonaqueous electrolyte solution battery including at least a positive electrode, a negative electrode, and the nonaqueous electrolyte solution; and a method for producing a nonaqueous electrolyte solution battery using the nonaqueous electrolyte solution.
The present invention provides: a film forming method by which a metal oxide film can be selectively formed on a film containing Si and O and not containing N; a method for manufacturing a semiconductor device to which said film forming method is applied; and a film forming system. The present invention pertains to a film forming method including: a surface treatment step in which a surface treatment gas composition containing a surface treatment material is brought into contact with a substrate having a film that contains at least Si and O and does not contain N, and a film that contains at least Si and N; and a film formation step in which, after the surface treatment step, a metal precursor and an oxidant are supplied to the substrate, and a metal oxide film is selectively formed on a film that contains Si and O and does not contain N.
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
41.
ETCHING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, ETCHING DEVICE, SURFACE TREATMENT GAS COMPOSITION, AND ETCHING GAS COMPOSITION CONTAINING SURFACE TREATMENT MATERIAL
The present invention provides: an etching method with which it is possible to selectively etch a film that contains Si and O but does not contain N; a method for manufacturing a semiconductor device, to the method the etching method being applied; an etching device; a surface treatment gas composition; and an etching gas composition containing a surface treatment material. The present invention relates to an etching method for selectively etching a film that contains Si and O but does not contain N, wherein (I) an etching gas composition that contains an HF gas, and (II) a surface treatment gas composition that contains a surface treatment material are brought into contact with a substrate which has a film that contains at least Si and O but does not contain N and a film that contains at least Si and N.
H01L 21/302 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour changer leurs caractéristiques physiques de surface ou leur forme, p. ex. gravure, polissage, découpage
42.
NONAQUEOUS ELECTROLYTE AND NONAQUEOUS ELECTROLYTE BATTERY
Provided is a nonaqueous electrolyte that, when used in a nonaqueous electrolyte battery, is capable of exhibiting excellent normal-temperature cycle properties and low-temperature input properties after cycle testing. Also provided is a nonaqueous electrolyte battery. The nonaqueous electrolyte contains: (I) at least one compound selected from the group consisting of monofluorophosphates, difluorophosphates, monofluorosulfonates, salts represented by general formula (1) in the description, and salts represented by general formula (2) in the description; (II) a solvent; (III) a nonaqueous organic solvent; and (IV) a compound represented by general formula (3) in the description. The nonaqueous electrolyte battery contains this nonaqueous electrolyte.
Provided is a nonaqueous electrolyte solution whereby the cycle characteristics and initial resistance of a nonaqueous electrolyte battery can be improved in a well-balanced fashion, the nonaqueous electrolyte battery being provided with a negative electrode that contains, as negative electrode active materials, graphite and Si and/or a Si metal oxide. The nonaqueous electrolyte solution contains: (I) at least one selected from the group consisting of a compound represented by general formula (1), a compound represented by general formula (2), a compound represented by general formula (3), and a compound represented by general formula (4); (II) a solute; and (III) a nonaqueous organic solvent.
H01M 10/0568 - Matériaux liquides caracterisés par les solutés
H01M 10/0569 - Matériaux liquides caracterisés par les solvants
44.
COMPOUND HAVING OXAZOLIDINE STRUCTURE, NONAQUEOUS ELECTROLYTE CONTAINING SAID COMPOUND, AND NONAQUEOUS ELECTROLYTE BATTERY CONTAINING SAID NONAQUEOUS ELECTROLYTE
Provided is a nonaqueous electrolyte capable of realizing excellent cycle characteristics compared to cases in which contained are compounds that are well known in the prior art. The nonaqueous electrolyte contains (I) a solute, (II) a nonaqueous organic solvent, and (III) at least one compound selected from the group consisting of the compounds represented by formulae (1)-(8).
An electrolyte solution for a nonaqueous electrolyte battery according to the present invention includes the following components: (I) a nonaqueous organic solvent; (II) an ionic salt as a solute; (III) at least one additive compound represented by the general formula (1); and (IV) at least one additive compound represented by the general formula (2), wherein the concentration of the component (IV) is 0.05 to 25.0 mass % with respect to 100 mass % of the component (III)
An electrolyte solution for a nonaqueous electrolyte battery according to the present invention includes the following components: (I) a nonaqueous organic solvent; (II) an ionic salt as a solute; (III) at least one additive compound represented by the general formula (1); and (IV) at least one additive compound represented by the general formula (2), wherein the concentration of the component (IV) is 0.05 to 25.0 mass % with respect to 100 mass % of the component (III)
An electrolyte solution for a nonaqueous electrolyte battery according to the present invention includes the following components: (I) a nonaqueous organic solvent; (II) an ionic salt as a solute; (III) at least one additive compound represented by the general formula (1); and (IV) at least one additive compound represented by the general formula (2), wherein the concentration of the component (IV) is 0.05 to 25.0 mass % with respect to 100 mass % of the component (III)
where R1 are each independently a substituent group having at least one kind selected from unsaturated bond and aromatic ring.
A substrate treating method according to the present invention comprises: a preparation step for preparing a substrate having a first surface having silicon nitride; and a surface modification step for forming a protective film for protecting the first surface, wherein the surface modification step includes a gas exposure treatment for bringing a reforming gas including a gas of a surface modifier into contact with the first surface in a heated state in a substrate holding space, and the surface modifier has a predetermined carboxylic acid silyl ester.
The present invention provides a production method for a halogenated alkane sulfonyl chloride that makes it possible to produce a halogenated alkane sulfonyl chloride at high yield with little waste. The present invention relates to a production method for a halogenated alkane sulfonyl chloride that includes a step for reacting a halogenated alkane sulfonyl compound represented by general formula (1) with hydrogen chloride gas to obtain a halogenated alkane sulfonyl chloride and a hydrochloride compound represented by general formula (2). (In formula (1) and formula (2), R1represents a hydrogen atom or a C1–6 aliphatic hydrocarbon group, R2represents a hydrogen atom, a halogen atom, a C1–6 aliphatic hydrocarbon group, a nitro group, a C6–14 aromatic hydrocarbon group, or a C3–14 aromatic heterocyclic group, it being possible for each R2to be the same or different when there are more than one, R3represents a hydrogen atom, a halogen atom, a C1–6 aliphatic hydrocarbon group, or a group in which there is an oxygen atom, a nitrogen atom, or an NH group at the end or between the carbon atoms of a C1–6 aliphatic hydrocarbon group, it being possible for all or a portion of the hydrogen atoms of an aliphatic hydrocarbon group to be substituted with a halogen atom, and it being possible for each R3to be the same or different when there are more than one, X represents a nitrogen atom or C(R4), it being possible for each X to be the same or different when there are more than one, Y represents a nitrogen atom or C(R5), R4represents a hydrogen atom, a C1–6 aliphatic hydrocarbon group, a C6–14 aromatic hydrocarbon group, or a C3–14 aromatic heterocyclic group, it being possible for R2and R4to bond to form a ring, R5represents a hydrogen atom, a C1–6 aliphatic hydrocarbon group, a C6–14 aromatic hydrocarbon group, or a C3–14 aromatic heterocyclic group, it being possible for R2and R5 to bond to form a ring, m is an integer from 1 to 5, inclusive, and n is an integer that is 1 or 2.)
C07C 303/02 - Préparation d'esters ou d'amides d'acides sulfuriquesPréparation d'acides sulfoniques ou de leurs esters, halogénures, anhydrides ou amides d'acides sulfoniques ou de leurs halogénures
C07C 309/80 - Halogénures d'acides sulfoniques ayant des groupes halogénosulfonyle liés à des atomes de carbone acycliques d'un squelette carboné saturé
C07D 233/54 - Composés hétérocycliques contenant des cycles diazole-1, 3 ou diazole-1, 3 hydrogéné, non condensés avec d'autres cycles comportant deux liaisons doubles entre chaînons cycliques ou entre chaînons cycliques et chaînons non cycliques
48.
NON-AQUEOUS ELECTROLYTE SOLUTION AND NON-AQUEOUS ELECTROLYTE SOLUTION SECONDARY BATTERY USING SAME
Provided are a novel non-aqueous electrolyte solution capable of suppressing an increase in initial resistance and a non-aqueous electrolyte secondary battery using the same. The non-aqueous electrolyte solution comprises (I) a compound represented by the following general formula [1a]; (II) a solute; and (III) a non-aqueous organic solvent.
Provided are a novel non-aqueous electrolyte solution capable of suppressing an increase in initial resistance and a non-aqueous electrolyte secondary battery using the same. The non-aqueous electrolyte solution comprises (I) a compound represented by the following general formula [1a]; (II) a solute; and (III) a non-aqueous organic solvent.
M+[X—S(═O)2—N—C(═O)−R]− [1a]
Provided are a novel non-aqueous electrolyte solution capable of suppressing an increase in initial resistance and a non-aqueous electrolyte secondary battery using the same. The non-aqueous electrolyte solution comprises (I) a compound represented by the following general formula [1a]; (II) a solute; and (III) a non-aqueous organic solvent.
M+[X—S(═O)2—N—C(═O)−R]− [1a]
(in the general formula [1a], X represents a halogen atom, R represents an —CN group or an —OCN group, and M+ represents an alkali metal ion).
H01M 10/0567 - Matériaux liquides caracterisés par les additifs
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p. ex. LiNiO2, LiCoO2 ou LiCoOxFy
H01M 4/583 - Matériau carboné, p. ex. composés au graphite d'intercalation ou CFx
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
H01M 10/0568 - Matériaux liquides caracterisés par les solutés
H01M 10/0569 - Matériaux liquides caracterisés par les solvants
49.
NON-AQUEOUS ELECTROLYTE AND NON-AQUEOUS ELECTROLYTE BATTERY
The present disclosure provides a non-aqueous electrolyte comprising: (I) a solute; (II) a non-aqueous organic solvent; (III) a compound represented by general formula (1) disclosed in the specification; (IV) a compound represented by general formula (4) disclosed in the specification; and (V) at least one compound selected from the group consisting of nitrates, compounds represented by general formula (2) disclosed in the specification, and compounds represented by general formula (3) disclosed in the specification, wherein the mass ratio (V)/{(III)+(IV)} of the amount of (V) to the total amount of (III) and (IV) is at least 0.0040.
The present disclosure provides: an azeotrope-like composition containing (Z)-1-chloro-3,3,3-trifluoropropene and 1,1,1,3,3,3-hexafluoroisopropyl methyl ether; an aerosol composition, a cleaning agent, a lubricant solution and a heat transfer medium which contain said azeotrope-like composition; a method for producing a composition; a composition; a cleaning method using said cleaning agent; and a recovery method.
C11D 7/28 - Composés organiques contenant un halogène
C07C 21/18 - Composés acycliques non saturés contenant des atomes d'halogène contenant des liaisons doubles carbone-carbone contenant du fluor
C07C 43/192 - Éthers une liaison sur l'oxygène de la fonction éther étant sur un atome de carbone d'un cycle autre que ceux d'un cycle aromatique à six chaînons contenant des atomes d'halogène
C09K 3/30 - Substances non couvertes ailleurs pour aérosols
C09K 5/04 - Substances qui subissent un changement d'état physique lors de leur utilisation le changement d'état se faisant par passage de l'état liquide à l'état vapeur ou vice versa
51.
COMPOSITION, DEHYDRATING AGENT, AND DEHYDRATION METHOD
The present disclosure provides: a composition which contains 1,1,1,3,3,3-hexafluoroisopropyl methyl ether and water; a dehydrating agent which contains the composition; and a method for dehydrating a compound to be treated, the method including a step for distilling 1,1,1,3,3,3-hexafluoroisopropyl methyl ether and water from a composition that contains the compound to be treated, 1,1,1,3,3,3-hexafluoroisopropyl methyl ether, and water.
A composition for film formation according to the present disclosure is used for forming a water-repellent film on at least a part of a surface of a substrate by being supplied to the substrate, in which the surface is covered with a protic liquid, the composition containing a silylating agent which silylates the surface of the substrate, a catalytic compound which promotes a silylation reaction by the silylating agent, and an aprotic solvent, in which a content of the catalytic compound is 1.0% by mass or more with respect to 100% by mass of the composition for film formation.
C08G 77/08 - Procédés de préparation caractérisés par les catalyseurs utilisés
C08G 77/24 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène groupes contenant des halogènes
C08G 77/26 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène groupes contenant de l'azote
C08G 77/62 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant du silicium, avec ou sans soufre, azote, oxygène ou carbone dans lesquels tous les atomes de silicium sont liés autrement que par des atomes d'oxygène par des atomes d'azote
C09D 183/08 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène
C09D 183/14 - Compositions de revêtement à base de composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant uniquement du silicium, avec ou sans soufre, azote, oxygène ou carboneCompositions de revêtement à base de dérivés de tels polymères dans lesquels au moins deux atomes de silicium, mais pas la totalité, sont liés autrement que par des atomes d'oxygène
53.
METHOD FOR PRODUCING PURIFIED FLUORINE-CONTAINING GAS COMPOSITION, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND ETCHING APPARATUS
Provided are: a method for producing a purified fluorine-containing gas composition capable of suppressing contamination of Cr on a treatment target surface when etching is performed; a method for producing a semiconductor device in which the method for producing the purified fluorine-containing gas composition is applied; and an etching apparatus. The present invention pertains to a method for producing a purified fluorine-containing gas composition, the method comprising a contact step for bringing, into contact with a metal fluoride that is solid at 30°C or lower, a crude fluorine-containing gas composition containing a fluorine-containing gas composition that includes 98 vol% or more of a fluorine-containing molecule excluding hydrogen fluoride and that has a Cr-concentration of 100 mass ppb or less.
METHOD FOR PRODUCING LITHIUM FLUORIDE, METHOD FOR PRODUCING LITHIUM HEXAFLUOROPHOSPHATE, METHOD FOR PRODUCING LITHIUM TETRAFLUOROBORATE, AND LITHIUM FLUORIDE
The present disclosure provides, for example, a method for producing lithium fluoride, the method involving step 1 for preparing an aqueous solution of at least one of lithium chloride and lithium sulfate, step 2 for mixing the aqueous solution of at least one of lithium chloride and lithium sulfate with a hydrofluoric acid aqueous solution, and step 3 for mixing a base with the mixture liquid of the aqueous solution of at least one of lithium chloride and lithium sulfate and the hydrofluoric acid aqueous solution, wherein pH of the liquid obtained in step 3 is 3-6.
Disclosed is a surface treatment agent for treating the surface of a substrate, the surface treatment agent containing polyhedral oligomeric silsesquioxane particles (A) and an organic solvent (B).
C09K 3/18 - Substances non couvertes ailleurs à appliquer sur des surfaces pour y minimiser l'adhérence de la glace, du brouillard ou de l'eauSubstances antigel ou provoquant le dégel pour application sur des surfaces
C09D 5/00 - Compositions de revêtement, p. ex. peintures, vernis ou vernis-laques, caractérisées par leur nature physique ou par les effets produitsApprêts en pâte
METHOD FOR PRODUCING BLACK PATTERN-BEARING SUBSTRATE, BLACK PATTERN-BEARING SUBSTRATE, LIGHT-EMITTING ELEMENT, AND NEGATIVE-TYPE PHOTOSENSITIVE COMPOSITION
This method for producing a black pattern-bearing substrate comprises: a film formation step for forming an unexposed film on a substrate using a negative-type photosensitive composition; an exposure step for obtaining an exposed film by selectively irradiating the unexposed film with light having maximums in the spectrum at least in the 350-380 nm wavelength range and the 390-420 nm wavelength range; and a development step for developing the exposed film to form a pattern. The negative-type photosensitive composition in this production method comprises: a black colorant having an absorbance minimum within a wavelength range of 380-420 nm; an oxime ester photoinitiator; an acylphosphine oxide photoinitiator; and a curable component that is cured by an active species generated from the oxime ester photoinitiator or acylphosphine oxide photoinitiator.
Provided are: a substrate having a metal molybdenum film with low electrical resistivity; a method for producing the substrate; a molybdenum precursor used for said production method; and a method for producing the molybdenum precursor. The present invention relates to a substrate having a metal molybdenum film in which the content of tungsten atoms in the film is 1.0 × 1016atoms/cm3 or less.
C23C 16/18 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le dépôt d'un matériau métallique à partir de composés organométalliques
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 21/285 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un gaz ou d'une vapeur, p. ex. condensation
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 21/3205 - Dépôt de couches non isolantes, p. ex. conductrices ou résistives, sur des couches isolantesPost-traitement de ces couches
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
58.
NONAQUEOUS ELECTROLYTE SOLUTION AND NONAQUEOUS ELECTROLYTE BATTERY
A nonaqueous electrolyte solution containing (I) a compound represented by general formula (1) set forth in the description, (II) a solute, (III) a nonaqueous organic solvent, and hydrogen fluoride, wherein the concentration of hydrogen fluoride with respect to the total amount of the nonaqueous electrolyte solution is 0.1-180 mass ppm; and a nonaqueous electrolyte battery including said nonaqueous electrolyte solution.
The present disclosure provides: a nonaqueous electrolyte solution containing (I) at least one sulfonic acid anhydride represented by general formula (1) set forth in the description, (II) at least one compound selected from the group represented by "2", "3", "4", "5", "6", and "7" set forth in the description, (III) a solute, and (IV) a nonaqueous organic solvent; and a nonaqueous electrolyte battery including at least a positive electrode, a negative electrode, a separator, and said nonaqueous electrolyte solution.
A nonaqueous electrolyte solution containing (I) a compound represented by general formula (1) set forth in the description, (II) at least one compound selected from the group consisting of compounds (2)-(5) set forth in the description, (III) a solute, and (IV) a nonaqueous organic solvent; and a nonaqueous electrolyte battery including the nonaqueous electrolyte solution.
A graft method according to the present invention comprises: a culture step in which a cell sheet is cultured on a culture surface of a culture carrier substrate; and a graft step in which the cell sheet formed on the culture surface of the culture carrier substrate is attached to a recipient site, after which the culture carrier substrate is detached from the cell sheet.
C12N 5/00 - Cellules non différenciées humaines, animales ou végétales, p. ex. lignées cellulairesTissusLeur culture ou conservationMilieux de culture à cet effet
C12M 1/00 - Appareillage pour l'enzymologie ou la microbiologie
C12M 3/00 - Appareillage pour la culture de tissus, de cellules humaines, animales ou végétales, ou de virus
C12N 5/071 - Cellules ou tissus de vertébrés, p. ex. cellules humaines ou tissus humains
C12N 11/08 - Enzymes ou cellules microbiennes immobilisées sur ou dans un support organique le support étant un polymère synthétique
The method of dry-etching silicon oxide of the present disclosure includes reacting silicon oxide with any one of the following (A) to (C): (A) a gaseous hydrogen fluoride and a gaseous organic amine compound, (B) a gaseous hydrogen fluoride salt of an organic amine compound, and (C) a gaseous hydrogen fluoride, a gaseous organic amine compound, and a gaseous hydrogen fluoride salt of an organic amine compound in a non-plasma state.
C09K 13/04 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/302 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour changer leurs caractéristiques physiques de surface ou leur forme, p. ex. gravure, polissage, découpage
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
63.
RECHARGEABLE BATTERY WITH AN SEI PROTECTIVE LAYER ON THE SURFACE OF A METAL ANODE AND METHOD FOR MAKING SAME
A rechargeable battery has a metal anode with a solid electrolyte interphase (SEI) surface layer, a cathode with a halogen species integrated in a porous carbon material, an electrolyte with an organic solvent and a salt that is in contact with the anode and the cathode, and an oxidizing gas in contact with the electrolyte. The SEI layer has the composition MαBβCγNδFεXζOη, where M is a metal, B is boron, C is carbon, N is nitrogen, F is fluorine, X is a non-fluorine halogen species, and O is oxygen; α is a number in the range of 0.2-0.4, β is a number in the range of 0.0-0.1, γ is a number in the range of 0.15-0.25, δ is a number in the range of 0.0-0.02, ε is a number in the range of 0.0-0.1, ζ is a number in the range of 0.005-0.02, η is a number in the range of 0.40-0.60, and α, β, γ, δ, ε, ζ, and η are selected such that the sum of α+β+γ+δ+ε+ζ+η=1. The SEI surface layer on the metal anode suppresses the formation of dendrites, facilitates the even plating of lithium, limits electrolyte decomposition, and extends battery life.
This photosensitive composition comprises (A) a compound having an ethylenic carbon-carbon double bond, (B) one or more thiol-based compounds selected from the group consisting of thiols and thiol precursors, (C) a photoradical initiator, and (D) a disulphide compound.
Provided is a container containing a curable composition. A curable composition containing a compound having an ethylenic carbon-carbon double bond, one or more thiol-based compounds selected from the group consisting of thiol and thiol precursor, and a radical initiator, and an oxygen-containing gas are sealed in the container having a sealing capability. Moreover, provided is a method for producing a curable composition, the method comprising: a preparation step for preparing a mixture by mixing a compound having an ethylenic carbon-carbon double bond, one or more thiol base compounds selected from the group consisting of thiol and thiol precursor, and a radical initiator; and an oxygen contact step for bringing the mixture in contact with an oxygen-containing gas.
B65D 77/00 - Paquets réalisés en enfermant des objets ou des matériaux dans des réceptacles préformés, p. ex. des boîtes, des cartons, des sacs ou des sachets
C08F 8/34 - Introduction d'atomes de soufre ou de groupes contenant du soufre
C08F 220/20 - Esters des alcools polyhydriques ou des phénols polyhydriques
C08G 75/045 - Polythioéthers à partir de composés mercapto ou de leurs dérivés métalliques à partir de composés mercapto et de composés insaturés
G03F 7/027 - Composés photopolymérisables non macromoléculaires contenant des doubles liaisons carbone-carbone, p. ex. composés éthyléniques
H10K 50/10 - OLED ou diodes électroluminescentes polymères [PLED]
αβγδεζηη, where M is a metal, B is boron, C is carbon, N is nitrogen, F is fluorine, X is a non-fluorine halogen species, and 0 is oxygen; α is a number in the range of 0.2-0.4, β is a number in the range of 0.0-0.1, γ is a number in the range of 0.15-0.25, δ is a number in the range of 0.0-0.02, ε is a number in the range of 0.0-0.1, ζ is a number in the range of 0.005-0.02, η is a number in the range of 0.40-0.60, and a, p, y, 6, E, (, and q are selected such that the sum of α+β+γ+δ+ε+ζ+η=1. The SEI surface layer on the metal anode suppresses the formation of dendrites, facilitates the even plating of lithium, limits electrolyte decomposition, and extends battery life.
C23C 22/73 - Traitement chimique de surface de matériaux métalliques par réaction de la surface avec un milieu réactif laissant des produits de réaction du matériau de la surface dans le revêtement, p. ex. revêtement par conversion, passivation des métaux caractérisé par le procédé
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
67.
NONAQUEOUS SOLVENT SOLUTION, RETENTION METHOD, AND STORAGE CONTAINER
The present disclosure provides a nonaqueous solvent solution containing a nonaqueous solvent, a difluorobis(oxalato)phosphate, a tetrafluoro oxalato phosphate, and a tris(oxalato)phosphate, wherein: the concentration of the difluorobis(oxalato)phosphate in the nonaqueous solvent solution is 10-50 mass%; and the ratio of the difluorobis(oxalato)phosphate and the tris(oxalato)phosphate is 0.001 mol or more of the tris(oxalato)phosphate to 1 mol of the difluorobis(oxalate)phosphate. The present disclosure further provides a retention method and a storage container.
Provided is a nonaqueous solvent solution containing a nonaqueous solvent, a difluorobis(oxalato)phosphate, and a tris(oxalato)phosphate, wherein: the concentration of the difluorobis(oxalato)phosphate in the nonaqueous solvent solution is 10-50 mass%; and the ratio of the difluorobis(oxalato)phosphate and the tris(oxalato)phosphate is 0.001 mol or more of the tris(oxalato)phosphate to 1 mol of the difluorobis(oxalato)phosphate. Further provided is a method for producing a nonaqueous electrolyte that involves adding the nonaqueous solvent solution to a reference nonaqueous electrolyte containing a solute and a nonaqueous electrolyte solvent.
The present disclosure provides a nonaqueous electrolyte solution containing: (I) at least one selected from the group consisting of a compound represented by Formula (1) described in the specification, a compound represented by Formula (2) described in the specification, and a compound represented by Formula (3) described n the specification, and a nonaqueous electrolyte solution battery including at least a positive electrode, a negative electrode, a separator, and the above nonaqueous electrolyte solution.
The present invention provides a nonaqueous electrolyte solution which, when used in a nonaqueous electrolyte secondary battery containing Si and/or silicon oxide as a negative electrode active material, can exhibit at least one of improvement of a capacity retention rate after cycles and reduction of the amount of generated gas during high temperature storage in the nonaqueous electrolyte secondary battery. A nonaqueous electrolyte solution contains (I) a nonaqueous organic solvent; (II) a solute that is an ionic salt; and (III) a compound represented by formula (1) or a compound represented by formula (3). (3): PO(OR4yy(OR53-y3-y. In formula (1), for example, each R1is independently a hydrogen atom, a halogen atom, a linear alkyl group having 1-12 carbon atoms or a branched alkyl group having 3-12 carbon atoms. In formula (3), each R4independently represents an alkenyl group or an alkynyl group; R5 represents an alkyl group or an aryl group; and y is an integer of 2-3.
A film-forming composition according to the present disclosure is used for forming a water-repellent film and comprises (I) a silylation agent, (II) a chlorine-containing silyl ester compound, and (III) an aprotic solvent.
Provided is a fluorine-containing polymer having water repellency and photosensitivity equivalent to those of a conventional fluorine-containing polymer and capable of being decomposed at a lower temperature. A fluorine-containing polymer according to the present disclosure contains a repeating unit represented by general formula (1) or (1)'. (In general formula (1), R1is a hydrogen atom, a fluorine atom, a chlorine atom, or a C1-10 straight-chain or C3-10 branched alkyl group. Some or all of hydrogen atoms bonded to carbon atoms in the alkyl group may be substituted with fluorine atoms. In general formula (1), R2is a single bond, an alkylene group which may have a straight-chain, branched, or cyclic structure, an aromatic ring, an ester, a carbonyl, an ether, an amide, an amine, or a composite substituent thereof, and a part thereof may be fluorinated and/or chlorinated. In general formula (1)', R1ais a C1-10 straight-chain or C3-10 branched alkyl group. Some or all of hydrogen atoms bonded to carbon atoms in the alkyl group may be substituted with fluorine atoms and/or chlorine atoms. In general formula (1)', R2ais an alkylene group which may have a straight-chain, branched, or cyclic structure, an aromatic ring, an ester, a carbonyl, an ether, an amide, an amine, or a composite substituent thereof, and a part thereof may be fluorinated and/or chlorinated. In general formula (1)', R2b is an alkylene group which may have a straight-chain, branched, or cyclic structure, an aromatic ring, an ester, a carbonyl, an ether, an amide, an amine, or a composite substituent thereof, and a part thereof may be fluorinated and/or chlorinated. In general formulae (1) and (1)', X is a hydroxyl group, an alkoxy group, an oxycarbonyl group, an oxysulfonyl group, an oxycarboxy group, or a hydrogen atom. In general formulae (1) and (1)', n is a natural number of 1-3.)
C07C 67/08 - Préparation d'esters d'acides carboxyliques par réaction d'acides carboxyliques ou d'anhydrides symétriques avec le groupe hydroxyle ou O-métal de composés organiques
The present invention provides a polymer that makes it possible to form a resin film which exhibits a low sliding angle and exhibits low hysteresis with respect to an immersion liquid in immersion exposure. A copolymer according to the present disclosure comprises a repeating unit represented by general formula (1) and a repeating unit derived from a compound having a polymerizable carbon-carbon double bond. (In general formula (1), R1is a hydrogen atom, a fluorine atom, a chlorine atom, or a C1-10 straight-chain or C3-10 branched alkyl group. Some or all of hydrogen atoms that bond to a carbon atom in the alkyl group may be substituted with a fluorine atom. R2 is an amine, an amide, an ether, a carbonyl, an ester, an aromatic ring, or an alkylene group which may have a straight-chain, branched, or cyclic structure or a single bond, or is a complex substituent of these, and a part thereof may be fluorinated and/or chlorinated. X is a hydroxyl group, an alkoxy group, or a hydrogen atom.)
C07C 67/08 - Préparation d'esters d'acides carboxyliques par réaction d'acides carboxyliques ou d'anhydrides symétriques avec le groupe hydroxyle ou O-métal de composés organiques
A nonaqueous solution in contact with austenitic stainless steel, the nonaqueous solution containing a nonaqueous solvent and an imidic acid or imidic acid salt represented by a specific structure, in which a content of the nonaqueous solvent having a dielectric constant (at 25° C.) of 10 or less in the nonaqueous solvent is 50% by volume to 100% by volume.
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
H01M 10/0569 - Matériaux liquides caracterisés par les solvants
76.
METHOD FOR PRODUCING SUBSTRATE AND SUBLIMATION DRYING METHOD
The method for producing a substrate of the present invention includes a preparation step of preparing a substrate that has an uneven structure at the surface thereof, an arrangement step of arranging the substrate in a chamber with a cleaning liquid held in at least recessed portions of the uneven structure, a supply step of supplying a sublimable substance in a liquid state or supplying a sublimable film formation composition in a liquid state that includes a sublimable substance to at least the recessed portions of the substrate arranged in the chamber, and a sublimation drying step of coagulating, sublimating, and thereby removing a film of the sublimable substance or sublimable film formation composition that has been supplied, the sublimation drying step is controlled such that Tdp and Tmin satisfy Tmin>Tdp.
The present invention relates to a method for removing MoFx or MoFx and MoOFx, including: bringing a halogen-containing gas into contact with a member having a deposit or a coating of MoFx or MoFx and MoOFx (where x represents a number greater than 0 and less than 6); and removing MoFx or MoFx and MoOFx from the member, a method for removing a deposit or a coating from a member having the deposit or the coating of MoFx or MoFx and MoOFx mixed as impurities in MoF6 by a method for producing a semiconductor device including the above removing method, and a method for producing a semiconductor device that includes removing a deposit or a coating from a semiconductor device production apparatus having a deposit or coating of MoFx or MoFx and MoOFx, and that can avoid clogging or contamination of the production apparatus.
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/14 - Dépôt d'un seul autre élément métallique
H01L 21/3205 - Dépôt de couches non isolantes, p. ex. conductrices ou résistives, sur des couches isolantesPost-traitement de ces couches
78.
Single-crystal silicon carbide wafer, single-crystal silicon carbide ingot, and method for producing single-crystal silicon carbide
2 or less on the surface. The central region (33) includes the center of the surface of the single-crystal silicon carbide wafer (31). An area of the central region (33) is one fourth or more of an area of the surface of the single-crystal silicon carbide wafer (31).
A coated fertilizer comprising a water-soluble granular fertilizer and a coating film covering the water-soluble granular fertilizer, wherein the coating film contains a salt of a fatty acid having 20 or more carbon atoms and a wax.
C05G 5/30 - Engrais caractérisés par leur forme en couches ou enrobés, p. ex. enrobages anti-poussière
B01J 2/00 - Procédés ou dispositifs pour la granulation de substances, en généralTraitement de matériaux particulaires leur permettant de s'écouler librement, en général, p. ex. en les rendant hydrophobes
B01J 2/30 - Procédés ou dispositifs pour la granulation de substances, en généralTraitement de matériaux particulaires leur permettant de s'écouler librement, en général, p. ex. en les rendant hydrophobes en utilisant des agents empêchant le collage des granules entre euxTraitement de matériaux particulaires leur permettant de s'écouler librement, en général, p. ex. en les rendant hydrophobes
A coated fertilizer according to the present invention comprises a water-soluble granular fertilizer and a coating film covering the water-soluble granular fertilizer, wherein the content of a substance having a molecular weight of 10,000 or more in the coating film is 0-10%, and the content of sulfur atoms in the coating film with respect to the total content of atoms from atomic number 9 (fluorine) to atomic number 92 (uranium) in the periodic table of elements is 0-11 mass%.
C05G 5/30 - Engrais caractérisés par leur forme en couches ou enrobés, p. ex. enrobages anti-poussière
B01J 2/00 - Procédés ou dispositifs pour la granulation de substances, en généralTraitement de matériaux particulaires leur permettant de s'écouler librement, en général, p. ex. en les rendant hydrophobes
B01J 2/30 - Procédés ou dispositifs pour la granulation de substances, en généralTraitement de matériaux particulaires leur permettant de s'écouler librement, en général, p. ex. en les rendant hydrophobes en utilisant des agents empêchant le collage des granules entre euxTraitement de matériaux particulaires leur permettant de s'écouler librement, en général, p. ex. en les rendant hydrophobes
C05G 3/00 - Mélanges d'un ou plusieurs engrais avec des additifs n'ayant pas une activité spécifique d'engrais
81.
SILVER OXIDE PARTICLES, SILVER OXIDE POWDER, BONDING COMPOSITION, SILVER OXIDE PASTE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE USING SAID BONDING COMPOSITION OR SAID SILVER OXIDE PASTE, AND METHOD FOR PRODUCING SILVER OXIDE PARTICLES OR SILVER OXIDE POWDER
Provided is a bonding material that demonstrates good bonding strength even when used for bonding at a low temperature. Also provided are: silver oxide particles having a flake shape; or a silver oxide powder containing the same. The silver oxide particles having a flake shape have an average thickness of 10-100 nm and have a D50 of 100-350 nm. The silver oxide particles having a flake shape or the silver oxide powder containing the same can be used as a paste for bonding a semiconductor substrate and, for example, a power semiconductor chip.
C09J 11/04 - Additifs non macromoléculaires inorganiques
H01B 1/00 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisésEmploi de matériaux spécifiés comme conducteurs
H01B 1/20 - Matériau conducteur dispersé dans un matériau organique non conducteur
H01B 1/22 - Matériau conducteur dispersé dans un matériau organique non conducteur le matériau conducteur comportant des métaux ou des alliages
H01B 13/00 - Appareils ou procédés spécialement adaptés à la fabrication de conducteurs ou câbles
H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
H05K 3/38 - Amélioration de l'adhérence entre le substrat isolant et le métal
82.
Single-crystal silicon carbide wafer, and single-crystal silicon carbide ingot
3 or less, and a region where a misorientation in a crystal plane of the single-crystal silicon carbide wafer (31) is 50 arcsec or less is present on the surface. An area of the region is one fourth or more of an area of the surface of the single-crystal silicon carbide wafer.
The production method of a substrate with a patterned film according to the present disclosure includes: a cleaning step of performing UV/ozone cleaning or oxygen plasma cleaning on a substrate with a patterned film including a substrate and a patterned film on the substrate, to obtain a first substrate with a patterned film; and a heating step of heating the first substrate with a patterned film to obtain a second substrate with a patterned film, wherein the patterned film of the first substrate with a patterned film has a contact angle decreased in the cleaning step, and the patterned film of the second substrate with a patterned film has a contact angle recovered in the heating step.
C08F 236/16 - Copolymères de composés contenant plusieurs radicaux aliphatiques non saturés et l'un au moins contenant plusieurs liaisons doubles carbone-carbone le radical ne contenant que deux doubles liaisons carbone-carbone conjuguées contenant des éléments autres que le carbone et l'hydrogène contenant des halogènes
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/44 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les revêtements, p.ex. couche de passivation ou revêtement antireflet
H10K 50/115 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL] comprenant des nanostructures inorganiques actives, p. ex. des points quantiques luminescents
H10K 71/00 - Fabrication ou traitement spécialement adaptés aux dispositifs organiques couverts par la présente sous-classe
H10K 71/13 - Dépôt d'une matière active organique en utilisant un dépôt liquide, p. ex. revêtement par centrifugation en utilisant des techniques d'impression, p. ex. l’impression par jet d'encre ou la sérigraphie
84.
METHOD FOR PRODUCING SUBSTRATE WITH PATTERNED FILM AND FLUORINE-CONTAINING COPOLYMER
The production method of a substrate with a patterned film according to the present disclosure includes: a cleaning step of performing UV/ozone cleaning or oxygen plasma cleaning on a substrate with a patterned film to obtain a first substrate with a patterned film, the substrate with a patterned film including a substrate and a patterned film on the substrate, the patterned film containing a fluorine-containing copolymer having a specific repeating unit; and a heating step of heating the first substrate with a patterned film to obtain a second substrate with a patterned film.
C08F 236/16 - Copolymères de composés contenant plusieurs radicaux aliphatiques non saturés et l'un au moins contenant plusieurs liaisons doubles carbone-carbone le radical ne contenant que deux doubles liaisons carbone-carbone conjuguées contenant des éléments autres que le carbone et l'hydrogène contenant des halogènes
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/44 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les revêtements, p.ex. couche de passivation ou revêtement antireflet
H10K 50/115 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL] comprenant des nanostructures inorganiques actives, p. ex. des points quantiques luminescents
H10K 71/00 - Fabrication ou traitement spécialement adaptés aux dispositifs organiques couverts par la présente sous-classe
H10K 71/13 - Dépôt d'une matière active organique en utilisant un dépôt liquide, p. ex. revêtement par centrifugation en utilisant des techniques d'impression, p. ex. l’impression par jet d'encre ou la sérigraphie
85.
CURABLE RESIN MATERIAL, LIQUID-REPELLENT COMPOSITION, PHOTOSENSITIVE RESIN COMPOSITION, AND BANK MATERIAL
A purpose of the present disclosure is to provide a novel curable resin material with which the curing of an upper layer of a resin film formed from a bank material is improved and a bank of a desired shape containing a fluororesin can be easily obtained. The present disclosure relates to a curable resin material which is a component of a bank material and is for use in curing the bank material. The curable resin material includes a curable fluorine-containing resin having radical-generating groups in side chains. The content of the radical-generating groups in the curable fluorine-containing resin is 0.1-15 mol% with respect to the total amount of constituent units of the curable fluorine-containing resin, which is taken as 100 mol%.
C08F 220/24 - Esters contenant un halogène contenant des radicaux perhaloalkyle
C08F 236/16 - Copolymères de composés contenant plusieurs radicaux aliphatiques non saturés et l'un au moins contenant plusieurs liaisons doubles carbone-carbone le radical ne contenant que deux doubles liaisons carbone-carbone conjuguées contenant des éléments autres que le carbone et l'hydrogène contenant des halogènes
C08F 299/00 - Composés macromoléculaires obtenus par des interréactions de polymères impliquant uniquement des réactions entre des liaisons non saturées carbone-carbone, en l'absence de monomères non macromoléculaires
G03F 7/028 - Composés photopolymérisables non macromoléculaires contenant des doubles liaisons carbone-carbone, p. ex. composés éthyléniques avec des substances accroissant la photosensibilité, p. ex. photo-initiateurs
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
H10K 50/10 - OLED ou diodes électroluminescentes polymères [PLED]
H10K 59/122 - Structures ou couches définissant le pixel, p. ex. bords
NONAQUEOUS ELECTROLYTE SOLUTION, NONAQUEOUS SODIUM ION BATTERY, NONAQUEOUS POTASSIUM ION BATTERY, METHOD FOR PRODUCING NONAQUEOUS SODIUM ION BATTERY, AND METHOD FOR PRODUCING NONAQUEOUS POTASSIUM ION BATTERY
A nonaqueous electrolyte solution for a sodium ion battery or a potassium ion battery including (I) a nonaqueous organic solvent, (II) a solute of an ionic salt, and (III) at least one selected from the group including of an organochlorine compound, a phosphorus compound having a P—Cl bond, a sulfone compound having an S(═O)2—Cl bond, a sulfine compound having an S(═O)—Cl bond, and a silicon compound having a Si—Cl bond; a nonaqueous sodium ion battery and a nonaqueous potassium ion battery using the same; a method for producing the nonaqueous sodium ion battery; and a method for producing the nonaqueous potassium ion battery.
The present invention is directed to a novel water-repellent protective film-forming agent and a novel water-repellent protective film-forming liquid chemical, each of which is for forming a water-repellent protective film on a silicon element-containing surface of a wafer, and a method of surface-treating a wafer with the use of the agent in liquid form or the liquid chemical. The water-repellent protective film-forming agent according to the present invention includes at least one kind of silicon compound selected from the group consisting of guanidine derivatives of the following general formula [1] and amidine derivatives of the following general formula [2].
The present invention is directed to a novel water-repellent protective film-forming agent and a novel water-repellent protective film-forming liquid chemical, each of which is for forming a water-repellent protective film on a silicon element-containing surface of a wafer, and a method of surface-treating a wafer with the use of the agent in liquid form or the liquid chemical. The water-repellent protective film-forming agent according to the present invention includes at least one kind of silicon compound selected from the group consisting of guanidine derivatives of the following general formula [1] and amidine derivatives of the following general formula [2].
C07F 7/10 - Composés comportant une ou plusieurs liaisons C—Si azotés
C09D 5/00 - Compositions de revêtement, p. ex. peintures, vernis ou vernis-laques, caractérisées par leur nature physique ou par les effets produitsApprêts en pâte
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
88.
Photosensitive resin composition, method for producing cured product of fluororesin, fluororesin, fluororesin film, bank and display element
An object of the present invention is to provide a photosensitive resin composition having good liquid repellency. The photosensitive resin composition of the present invention at least contains a fluororesin having a crosslinking site, a solvent, and a photopolymerization initiator, and the fluororesin contains a repeating unit derived from a hydrocarbon having a fluorine atom.
C08F 2/50 - Polymérisation amorcée par énergie ondulatoire ou par rayonnement corpusculaire par la lumière ultraviolette ou visible avec des agents sensibilisants
C08F 2/54 - Polymérisation amorcée par énergie ondulatoire ou par rayonnement corpusculaire par des rayons X ou des électrons
C08L 27/12 - Compositions contenant des homopolymères ou des copolymères de composés possédant un ou plusieurs radicaux aliphatiques non saturés, chacun ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par un halogèneCompositions contenant des dérivés de tels polymères non modifiées par un post-traitement chimique contenant du fluor
89.
ELECTROLYTE SOLUTION FOR NONAQUEOUS SODIUM ION BATTERY, NONAQUEOUS SODIUM ION BATTERY, AND METHOD FOR PRODUCING NONAQUEOUS SODIUM ION BATTERY
An electrolyte solution for a nonaqueous sodium ion battery including (I) a fluorosulfate, (II) at least one selected from the group including compounds represented by specific Formulae (1) to (9), vinylene carbonate, tris(trimethylsilyl)borate, and tris(trimethylsilyl)phosphate, (III) a sodium salt, and (IV) a nonaqueous solvent; a nonaqueous sodium ion battery including at least a positive electrode, a negative electrode, and the electrolyte solution for a nonaqueous sodium ion battery; and a method for producing the nonaqueous sodium ion battery.
Provided are: a nonaqueous electrolyte that exhibits excellent initial input/output characteristics when used in a nonaqueous electrolyte battery; a nonaqueous electrolyte battery that exhibits excellent initial input/output characteristics; and a compound suitable for use in the nonaqueous electrolyte. Specifically provided are: a nonaqueous electrolyte containing (I) at least one compound selected from the group consisting of compounds represented by general formula (1) set forth in the specification, compounds represented by general formula (2), compounds represented by general formula (3), and compounds represented by general formula (4), (II) a solute, and (III) a nonaqueous organic solvent; a nonaqueous electrolyte battery containing the nonaqueous electrolyte; and a compound represented by any of general formulas (1) to (4) set forth in the specification.
Provided are: a non-aqueous electrolyte capable of improving low-temperature (-30°C) output characteristics (resistance after high-temperature storage) after a high-temperature (70°C) storage test, and capable of improving a discharge capacity retention rate after overdischarge following a high-temperature (70°C) storage test, in a balanced manner; and a non-aqueous electrolyte battery. The non-aqueous electrolyte contains: (I-1) a compound represented by general formula [1a] set forth in the specification; and (I-2) at least one compound selected from the group consisting of compounds represented by general formula [1b] and compounds represented by general formula [1b']. The content of (I-2) in the nonaqueous electrolyte is 10-25,000 ppm by mass.
This photosensitive composition comprises (A) a compound having an ethylenic carbon-carbon double bond, (B) one or two or more thiol-type compounds selected from the group consisting of thiols and thiol precursors, and (C) a photoradical initiator. The percentage of the thiol compound (B) in the total solids fraction of the photosensitive composition is at least 10 mass%. In addition, the photosensitive composition either does not contain an ultraviolet absorber or, if the photosensitive composition does contain an ultraviolet absorber, the ultraviolet absorber is less than 3 mass% in the total solids fraction.
G03F 7/031 - Composés organiques non couverts par le groupe
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
H10K 50/10 - OLED ou diodes électroluminescentes polymères [PLED]
H10K 59/122 - Structures ou couches définissant le pixel, p. ex. bords
94.
ELECTROLYTE SOLUTION FOR NONAQUEOUS SODIUM ION BATTERY, NONAQUEOUS SODIUM ION BATTERY, AND METHOD FOR PRODUCING THE SAME
An electrolyte solution for a nonaqueous sodium ion battery including (I) a nonaqueous solvent, (II) a sodium salt, and (III) a fluorosulfate, in which the electrolyte solution includes the (III) in an amount of 0.05 mass % to 10.00 mass % with respect to the total amount of the electrolyte solution for a nonaqueous sodium ion battery, and the electrolyte solution includes a chain carbonate in an amount of 0 mass % to 70 mass % with respect to the total amount of the (I); a nonaqueous sodium ion battery including at least a positive electrode, a negative electrode, and the electrolyte solution for a nonaqueous sodium ion battery; and a method for producing the nonaqueous sodium ion battery.
The present disclosure aims to provide a novel method for lowering the concentrations of dimethylamine, diethylamine, ethylpropylamine, and ethylisopropylamine in a crude trialkylamine. The present disclosure relates to a method for purifying a trialkylamine, including contacting a crude trialkylamine containing at least one impurity selected from the group consisting of dimethylamine, diethylamine, ethylpropylamine, and ethylisopropylamine with a zeolite to lower a concentration of the at least one impurity selected from the group consisting of dimethylamine, diethylamine, ethylpropylamine, and ethylisopropylamine in the crude trialkylamine than the concentration before contacting with the zeolite.
A substrate treating method according to the present disclosure includes: a preparation step for preparing a substrate having a first surface containing Si element and a second surface containing a metal element but not containing Si element; a surface modification step for selectively improving the water repellency of the first surface relative to the second surface by supplying a chemical solution containing a silylating agent, a catalytic compound, and an aprotic solvent to the first surface and the second surface; and a film formation step for selectively forming a film by supplying a film material in a vapor phase to the second surface. The chemical solution does not contain a nitrogen-containing heterocyclic compound, or satisfies the blending conditions that Cn is 0.05 mass% or less and Cn/Cc is 0.01 or less, where Cc is the content (mass%) of the catalytic compound contained in 100 mass% of the chemical solution, and Cn is the content of the nitrogen-containing heterocyclic compound.
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
H01L 21/318 - Couches inorganiques composées de nitrures
97.
LIQUEFIED GAS-FILLED CONTAINER AND METHOD FOR PRODUCING LIQUEFIED GAS-FILLED CONTAINER
A liquefied gas-filled container (100) according to the present invention which is equipped with a storage section (10) and a liquefied gas (30) stored in the storage section (10), wherein: the storage section (10) has a metal film (20) on an inner surface (12) and a fluorinated passive film (22) containing a metal fluoride on the metal film (20); a gas (35) and a liquid (33) are present inside the storage section (10); the gas (35) contains a gas phase (34) of the liquefied gas (30); and the liquid (33) contains a liquid phase (32) of the liquefied gas (30) and elemental nickel and/or elemental copper.
F17C 1/10 - Récipients sous pression, p. ex. bouteilles de gaz, réservoirs de gaz, cartouches échangeables avec des moyens pour assurer une protection contre la corrosion, p. ex. due à un acide à l'état gazeux
C23C 28/00 - Revêtement pour obtenir au moins deux couches superposées, soit par des procédés non prévus dans un seul des groupes principaux , soit par des combinaisons de procédés prévus dans les sous-classes et
98.
NONAQUEOUS ELECTROLYTE SOLUTION, NONAQUEOUS ELECTROLYTE SOLUTION BATTERY, AND METHOD FOR PRODUCING NONAQUEOUS ELECTROLYTE SOLUTION BATTERY
The present disclosure provides a nonaqueous electrolyte solution, containing: a compound represented by the specific Formula (1); a solute; and a nonaqueous organic solvent, a nonaqueous electrolyte solution battery, including: a positive electrode; a negative electrode; and the above nonaqueous electrolyte solution, and a method for producing a nonaqueous electrolyte solution battery, including: preparing the above nonaqueous electrolyte solution; and filling an empty cell including at least a positive electrode and a negative electrode with the nonaqueous electrolyte solution.
The present disclosure aims to provide a surface treatment method using a gas composition capable of removing a metal oxide or metal at low temperatures without using plasma. The present disclosure provides a surface treatment method including bringing a gas into contact with a surface of a workpiece, wherein the gas contains a β-diketone, a first additive gas, and a second additive gas, the first additive gas is NO, and the second additive gas is at least one selected from the group consisting of O2 and NO2.
