A method of producing rectangular seeds for use in semiconductor or solar material manufacturing includes connecting an adhesive layer to a top surface of a template, the template including a plurality of parallel slots, and drawing alignment lines on the adhesive layer, the alignment lines aligned with at least some of the parallel slots. The method also includes connecting quarter sections to the alignment layer such that an interface between a rectangular seed portion and a curved wing portion of each quarter section is aligned with at least one of the alignment lines drawn on the adhesive layer, and slicing each of the quarter sections to separate the rectangular seed portions from the curved wing portions.
C30B 11/00 - Croissance des monocristaux par simple solidification ou dans un gradient de température, p. ex. méthode de Bridgman-Stockbarger
B28D 5/04 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p. ex. des matériaux pour semi-conducteursAppareillages ou dispositifs à cet effet par outils autres que ceux du type rotatif, p. ex. par des outils animés d'un mouvement alternatif
An apparatus for producing rectangular seeds for use in semiconductor or solar material manufacturing includes a template (202) having a top surface and parallel slots (204), and an adhesive layer connected to the top surface of the template. The adhesive layer includes alignment lines aligned with the parallel slots. The apparatus also includes quarter sections (904) made of a semiconductor or solar material and connected to the alignment layer. An interface between a rectangular seed portion and a curved wing portion of each quarter section is aligned with at least one of the alignment lines. A wire web is adapted to slice through the interface of each quarter section to separate the rectangular seed portions from the curved wing portions to produce rectangular seeds.
B28D 5/04 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p. ex. des matériaux pour semi-conducteursAppareillages ou dispositifs à cet effet par outils autres que ceux du type rotatif, p. ex. par des outils animés d'un mouvement alternatif
A wafer cleaning apparatus includes a beam for holding a plurality of semiconductor or solar wafers. The beam includes at least one channel extending axially through the beam. An opening extends from the channel to a location between adjacent wafers. A manifold includes a conduit coupled to the channel and an immersion tank includes an ultrasonic transducer.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
4.
METHODS FOR THE RECYCLING OF WIRE-SAW CUTTING FLUID
A process is provided for treating coolant fluid used in wire-saw cutting of semiconductor wafers and which contains silicon-containing impurities. The process comprises changing the properties of the used coolant fluid so that the silicon-containing impurities may be filtered and separated from the coolant fluid to thereby yield a coolant fluid filtrate suitable for use in a wire-saw cutting operation.
A process is provided for treating coolant fluid used in wire-saw cutting of semiconductor wafers and which contains silicon-containing impurities. The process comprises changing the properties of the used coolant fluid so that the silicon-containing impurities may be filtered and separated from the coolant fluid to thereby yield a coolant fluid filtrate suitable for use in a wire-saw cutting operation.
A method of producing rectangular seed bricks for use in semiconductor or solar manufacturing includes connecting an alignment layer to a top surface of a template, drawing alignment lines on the alignment layer to demarcate a plurality of nodes, connecting cylindrical rods to the alignment layer such that a center of each rod is aligned with a corresponding node, and slicing through the rods and the alignment layer with a wire web to produce rectangular seed bricks.
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
B28D 5/04 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p. ex. des matériaux pour semi-conducteursAppareillages ou dispositifs à cet effet par outils autres que ceux du type rotatif, p. ex. par des outils animés d'un mouvement alternatif
7.
METHOD OF PREPARING A DIRECTIONAL SOLIDIFICATION SYSTEM FURNACE
A method of preparing a directional solidification system (DSS) furnace for use in semiconductor or solar manufacturing includes slicing a plurality of cylindrical rods to produce a plurality of rectangular seed bricks, a plurality of corner portions, and a plurality of quarter sections, and cropping the plurality of rectangular seed bricks into a plurality of rectangular seeds.
B28D 5/04 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p. ex. des matériaux pour semi-conducteursAppareillages ou dispositifs à cet effet par outils autres que ceux du type rotatif, p. ex. par des outils animés d'un mouvement alternatif
A method of grinding an ingot for use in manufacturing a semiconductor or solar wafer is disclosed. The method includes providing an ingot including four flat sides and four rounded corner portions, each corner portion extending between an adjacent pair of the flat sides, and grinding a plurality of planar facets on each corner portion, each planar facet of the corner portion joined to an adjacent facet at a juncture and oriented such that each corner portion has a substantially arcuate shape. A wafer and ingot are also disclosed.
B24B 9/06 - Machines ou dispositifs pour meuler les bords ou les biseaux des pièces ou pour enlever des bavuresAccessoires à cet effet caractérisés par le fait qu'ils sont spécialement étudiés en fonction des propriétés de la matière propre aux objets à meuler de matière inorganique non métallique, p. ex. de la pierre, des céramiques, de la porcelaine
C30B 33/00 - Post-traitement des monocristaux ou des matériaux polycristallins homogènes de structure déterminée
9.
CRUCIBLES FOR HOLDING MOLTEN MATERIAL AND METHODS FOR PRODUCING THEM AND FOR THEIR USE
Coated crucibles for holding molten material are disclosed. In some embodiments, the crucibles are used to prepare multicrystalline silicon ingots by a directional solidification process. Methods for preparing such crucibles and methods for preparing silicon ingots by use of such crucibles are also disclosed.
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
10.
METHOD OF PREPARING CAST SILICON BY DIRECTIONAL SOLIDIFICATION
A method of preparing a cast silicon crystalline ingot is provided. The method comprises charging a silicon spacer to the bottom surface of the crucible; arranging a monocrystalline silicon seed crystal on the silicon spacer such that no surface of the monocrystalline silicon material is in contact with the bottom surface of the crucible; charging polycrystalline silicon feedstock to the crucible; and applying heat through at least one of the opening and the at least one sidewall in order to form a partially melted charge of silicon in the crucible. The cast silicon crystalline ingot has no transverse dimension less than about five centimeters, and the cast silicon crystalline ingot has a dislocation density of less than 1000 dislocations/cm2. Wafers sliced from the cast silicon crystalline ingot have solar cell efficiency of at least 17.5% and light induced degradation no greater than 0.2%.
C30B 28/06 - Production de matériaux polycristallins homogènes de structure déterminée à partir de liquides par solidification simple ou dans un gradient de température
C30B 11/14 - Croissance des monocristaux par simple solidification ou dans un gradient de température, p. ex. méthode de Bridgman-Stockbarger caractérisée par le germe, p. ex. par son orientation cristallographique
11.
METHODS AND. SYSTEMS FOR GRAIN SIZE EVALUATION OF MULTI-CRYSTALLINE SOLAR WAFERS
Methods and systems for evaluation of wafers are disclosed. One example method includes illuminating a multi-crystalline wafer (434) according to a plurality of lighting parameters, capturing a plurality of images of the multi-crystalline wafer, stacking and projecting the plurality of images to generate a composite image, analyzing the composite image to identify one or more grains of the multi-crystalline wafer, and generating a report based on the analysis of the composite image. The multi-crystalline wafer is illuminated according to a different one of the plurality of lighting parameters in at least two of the plurality of images.
A solar module (100) having improved heat transfer properties is disclosed. The module has an upper surface (102) and a lower surface (104) and includes a photovoltaic cell (120) having a front side and a back side. A back side encapsulant (140) is disposed adjacent the back side of the cell and extends adjacent the lower surface (104) of the module. A front side encapsulant (130) is disposed adjacent the front side of the cell and extends adjacent the upper surface (102) of the module. Regions of particles (160) are disposed in the front side encapsulant. The particles have a heat transfer coefficient greater than a heat transfer coefficient of the front side encapsulant (130) and facilitate the anisotropic transfer of heat through the module.
H01L 31/052 - Moyens de refroidissement directement associés ou intégrés à la cellule PV, p.ex. éléments Peltier intégrés pour refroidissement actif ou puits thermiques directement associés aux cellules PV
A solar module (200) includes a photovoltaic cell (201) having a front surface and a rear surface. The photovoltaic cell (201) is configured for converting light into electricity. Fingers (204) are disposed on the front surface of the cell and are electrically connected to the cell to conduct electricity generated by the cell. The fingers (204) are spaced apart from each other by gaps (206). A bus bar (210) is disposed on the front surface of the cell and connected to at least the fingers (204) to conduct electricity from the fingers. The bus bar (210) is configured to facilitate the transfer of heat generated during soldering of a conductor to the bus bar away from locations of the soldering. Figure 3
A directional solidification furnace is disclosed that includes one or more movable insulating members disposed adjacent sides of the crucible. In a first position, the insulating members restrict the flow of heat away from the sides of the crucible. In a second position, the insulating members do not appreciably restrict the flow of heat away from the sides of the crucible. An actuating system is used to move the insulating members between the first position and the second position.
C30B 28/06 - Production de matériaux polycristallins homogènes de structure déterminée à partir de liquides par solidification simple ou dans un gradient de température
15.
MULTI-CRYSTALLINE SILICON INGOT AND DIRECTIONAL SOLIDIFICATION FURNACE
A multi - crystalline silicon ingot having a mass of greater than about 1000 kg, a directional solidification method of producing the ingot, and a directional solidification furnace having movable insulation and coding plates for producing the ingot are disclosed.
C30B 28/06 - Production de matériaux polycristallins homogènes de structure déterminée à partir de liquides par solidification simple ou dans un gradient de température
16.
DIRECTIONAL SOLIDIFICATION FURNACE HAVING MOVABLE HEAT EXCHANGERS
A directional solidification furnace is disclosed that includes one or more movable cooling plates disposed beneath a crucible. In a first position, the cooling plates are free from contact with a crucible support positioned adjacent the crucible. In a second position, the cooling plates are in contact with the crucible support. A control system is used to control the amount of force exerted by the cooling plates against the crucible.
C30B 28/06 - Production de matériaux polycristallins homogènes de structure déterminée à partir de liquides par solidification simple ou dans un gradient de température
17.
DIRECTIONAL SOLIDIFICATION FURNACE WITH LATERALLY MOVABLE INSULATION SYSTEM
A directional solidification furnace is disclosed that includes one or more movable insulating members disposed beneath a bottom portion of the crucible. In a first position, the insulating members restrict the flow of heat away from the bottom portion of the crucible. In a second position, the insulating members do not restrict the flow of heat away from the bottom portion of the crucible. An actuating system is used to move the insulating members between the first position and the second position.
Processes for suppressing minority carrier lifetime degradation in silicon wafers are disclosed. The processes involve quench cooling the wafers to increase the density of nano-precipitates in the silicon wafers and the rate at which interstitial atoms are consumed by the nano-precipitates.
A crystal puller for melting silicon and forming a single crystal ingot and a feed tool for shielding a portion of the crystal puller during charging of the crystal puller are disclosed herein. The crystal puller includes a crucible for containing molten silicon. The feed tool includes a cylinder and a plate. The cylinder has an inner surface and an annular ledge formed in a portion of the inner surface. The cylinder has a diameter at the annular ledge that is less than a diameter of the cylinder at the inner surface. The plate is positioned on the annular ledge and includes a first section separate from a second section. The first section and the second section are operable to move laterally with respect to each other. The plate has a central opening formed in at least one of the first section and the second section.
C30B 15/02 - Croissance des monocristaux par tirage hors d'un bain fondu, p. ex. méthode de Czochralski en introduisant dans le matériau fondu le matériau à cristalliser ou les réactifs le formant in situ
A heat exchanger system for use in a directional solidification furnace is disclosed. The heat exchanger includes a plate having a flow path formed in the plate for directing a flow of coolant. The flow path has an inlet positioned adjacent an outlet. A wall separates the inlet and the outlet of the flow path. The heat exchanger includes a cover having an opening in fluid communication with the inlet and the outlet of the flow path. An inner conduit is connected to the inlet of the flow path and an outer conduit is connected to the outlet of the flow path.
Systems and methods are disclosed for inhibiting heat transfer through lateral sidewalls of a support member positioned beneath a crucible in a directional solidification furnace. The systems and methods include the use of insulation positioned adjacent the lateral sidewalls of the support member. The insulation inhibits heat transfer through the lateral sidewalls of the support member to ensure the one-dimensional transfer of heat from the melt through the support member.
A directional solidification furnace comprises a crucible assembly including a crucible for containing a melt having walls and a base with an opening therein, a crucible support for supporting the crucible, and a lid covering the crucible. A plate is received in the opening in the base. The plate has a higher thermal conductivity than that of the base. The base can include a composite having an additive such that the composite base has a higher thermal conductivity than a comparable without the additive.
Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content.
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
C04B 35/584 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de non oxydes à base de borures, nitrures ou siliciures à base de nitrure de silicium
24.
METHODS AND PULLING ASSEMBLIES FOR PULLING A MULTICRYSTALLINE SILICON INGOT FROM A SILICON MELT
Methods for producing multicrystalline silicon ingots by use of a Czochralski-type crystal puller and pulling assemblies that include a plurality of seed crystals for pulling multicrystalline silicon ingots.
The present disclosure generally relates to methods for recovering silicon from saw kerf, or an exhausted abrasive slurry, resulting from the cutting of a silicon ingot, such as a single crystal or polycrystalline silicon ingot. More particularly, the present disclosure relates to methods for isolating and purifying silicon from saw kerf or the exhausted slurry, such that the resulting silicon may be used as a raw material, such as a solar grade silicon raw material.
C10M 175/00 - Traitement des lubrifiants usés pour récupérer les produits utiles
B28D 5/00 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p. ex. des matériaux pour semi-conducteursAppareillages ou dispositifs à cet effet
B23Q 11/10 - Dispositions pour le refroidissement ou la lubrification des outils ou des pièces travaillées
B03D 1/02 - Procédés de flottation par formation d'écume
B24B 55/12 - Dispositifs d'évacuation du nuage d'huile ou de l'agent de refroidissementDispositifs pour collecter ou récupérer des matériaux issus du meulage ou du polissage, p. ex. métaux précieux, pierres précieuses, diamants ou similaires
26.
METHODS FOR PREPARING A MELT OF SILICON POWDER FOR SILICON CRYSTAL GROWTH
Methods for preparing a melt from silicon powder for use in growing a single crystal or polycrystalline silicon ingot in accordance with the Czochralski method that include removal of silicon oxides from the powder; application of a vacuum to remove air and other oxidizing gases; controlling the position of the charge relative to the heater during and after melting of the powder and maintaining the charge above its melting temperature for a period of time to allow oxides to dissolve; and use of a removable spacer between the crucible sidewall and the silicon powder charge to reduce oxides and silicon bridging.
A directional solidification furnace includes a crucible for holding molten silicon and a lid covering the crucible and forming an enclosure over the molten silicon. The crucible also includes an inlet in the lid for introducing inert gas above the molten silicon to inhibit contamination of the molten silicon.
C30B 28/06 - Production de matériaux polycristallins homogènes de structure déterminée à partir de liquides par solidification simple ou dans un gradient de température
brevets