Abrégé

A process for manufacturing an encapsulation circuit using an additive process, and an encapsulation circuit. The process for manufacturing an encapsulation circuit using an additive process comprises the following steps: (a) covering a surface of an insulating material (10) with a photoresist (14) having a circuit negative image; (b) forming, in an exposed region of the insulating material (10) that is not covered by the photoresist (14), a conductive seed crystal layer (16) by means of PVD ion plating; (c) forming a conductor thickening layer (18) on the conductive seed crystal layer (16); (d) peeling off the photoresist (14), so as to form a surface circuit pattern (20); and (e) electrically connecting the surface circuit pattern (20) to an electronic component by using a solder bump or a conductor pillar (22).

Classes IPC  ?

• H05K 1/03 - Emploi de matériaux pour réaliser le substrat
• H05K 3/02 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué à la surface du support isolant et est ensuite enlevé de zones déterminées de la surface, non destinées à servir de conducteurs de courant ou d'éléments de blindage
• H01L 23/488 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes formées de structures soudées

Abrégé

A manufacturing apparatus for a microwave device. The manufacturing apparatus (1) for the microwave device comprises: a clamp (10), wherein the clamp (10) comprises a base (11) capable of rotating about a first axis (A1), and a bracket (12) capable of swinging about a second axis (A2), the bracket (12) is connected to the base (11) to hold an insulating substrate (40), and the first axis (A1) and the second axis (A2) intersect; a source (20) for releasing metal ions towards the insulating substrate (40); and a controller (30), wherein the controller (30) is coupled to the clamp (10) and the source (20), and is configured to control a motion pattern of the clamp (10) and/or an angle of the source (20), such that the insulating substrate (40) receives the metal ions from a plurality of angles, and a metal layer (50) is formed on a surface (41) of the insulating substrate (40). Further disclosed is a manufacturing method for a microwave device.

Classes IPC  ?

• C23C 14/50 - Porte-substrat
• C23C 14/48 - Implantation d'ions
• C23C 14/35 - Pulvérisation cathodique par application d'un champ magnétique, p. ex. pulvérisation au moyen d'un magnétron

Abrégé

The present invention relates to a method for manufacturing a three-dimensional circuit, comprising: forming a metal base layer (21) on a surface (11) of an insulating shell (10) by means of PVD ion plating; using a three-dimensional laser device to irradiate laser between a graphic region (12) and a non-graphic region (13) on the surface (11) to remove the metal base layer (21) at the boundary, to form an insulating isolation belt (14); electroplating a copper layer (25) in the graphic region (12); and etching the metal base layer (21) in the non-graphic region (13). The method can realize smooth or low-roughness metallization of a material interface and higher binding force at the same time, without changing dielectric properties of materials or increasing electromagnetic loss, and is also more environmentally friendly, and facilitates improving the processing capacity of fine-pitch line graphics of the three-dimensional circuit. The present invention also relates to an electronic element, comprising an insulating shell and the three-dimensional circuit prepared on the shell by means of the method. The electronic element is a mobile phone antenna, a base station antenna, a radar antenna or an automotive wireless anti-collision component.

Classes IPC  ?

• H05K 3/02 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué à la surface du support isolant et est ensuite enlevé de zones déterminées de la surface, non destinées à servir de conducteurs de courant ou d'éléments de blindage

Abrégé

Disclosed is a method for manufacturing an LCP-based flexible copper-clad plate, the method comprising providing an LCP substrate and subjecting the LCP substrate to a Hall ion source pre-treatment; forming an ion-implanted layer within the surface of the LCP substrate at a certain depth range by means of ion implantation; performing plasma deposition to form, by means of deposition, a plasma deposition layer on the ion implantation layer; performing magnetron sputtering deposition to deposit copper ions on the plasma deposition layer and form a magnetron sputtering deposition layer; and plating the magnetron sputtering deposition layer with a thickened copper layer to manufacture the LCP-based flexible copper-clad plate. Also disclosed is an LCP-based flexible copper-clad plate, wherein the peeling strength between a copper foil and the substrate in the LCP-based flexible copper-clad plate is greater than or equal to 0.5 N/mm, the surface roughness between the two is ≤ 0.3 μm, the thickness tolerance of a double-sided copper foil is not more than 4.3 μm, and the thickness tolerance of a single-sided copper foil is not more than 3.4 μm.

Classes IPC  ?

• C23C 14/02 - Pré-traitement du matériau à revêtir
• C23C 14/48 - Implantation d'ions
• C23C 14/35 - Pulvérisation cathodique par application d'un champ magnétique, p. ex. pulvérisation au moyen d'un magnétron
• C23C 14/20 - Matériau métallique, bore ou silicium sur des substrats organiques
• H05K 3/14 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de la vaporisation pour appliquer le matériau conducteur

Abrégé

A copper clad laminate (10) and a metalization method for micropores thereof. The method comprises the following steps: providing a substrate (11) consisting of an insulating material; using laser drilling to drill micropores having a diameter of 2-30 μm into the substrate (11); simultaneously implanting a first electrically conductive material into the surface of the substrate (11) and the pore walls of the micropores at a specific depth by means of ion implantation, so as to form an ion implanted layer (13); and implanting a second electrically conductive material into the pore walls of the micropores by means of focused ion implantation, so as to form an enhanced ion implanted layer (18). The current density of the ion beam forming the enhanced ion implanted layer (18) in the copper clad laminate (10) having metallized micropores is many times higher than the current density of the ion beam forming the ion implanted layer (13).

Classes IPC  ?

• H05K 3/42 - Trous de passage métallisés

Abrégé

A microwave dielectric component (100) comprises a microwave dielectric substrate (101) and a metal layer, the metal layer being bonded to a surface of the microwave dielectric substrate (101). The metal layer comprises a conductive seed layer and a metal thickening layer (105). The conductive seed layer comprises an ion implantation layer (103) implanted into the surface of the microwave dielectric substrate (101) and a plasma deposition layer (104) adhered on the ion implantation layer (103). The metal thickening layer (105) is adhered on the plasma deposition layer (104). A manufacturing method of the microwave dielectric component (100) is further disclosed.

Classes IPC  ?

• C23C 14/48 - Implantation d'ions
• C23C 14/20 - Matériau métallique, bore ou silicium sur des substrats organiques
• C23C 14/18 - Matériau métallique, bore ou silicium sur d'autres substrats inorganiques
• C23C 14/32 - Évaporation sous vide par explosionÉvaporation sous vide par évaporation suivie d'une ionisation des vapeurs
• C23C 28/02 - Revêtements uniquement de matériaux métalliques

Abrégé

Provided are a conductor post (20) and a manufacturing method thereof, a chip packaging method, and a flip chip product. The method for manufacturing the conductor post (20) comprises the following steps of: a surface of a chip electrode (12), or a hole wall in a hole (28) formed in a chip (10), or the line surface of a package substrate (40) are subjected to an ion implantation and/or a plasma deposition process by using a target material, so as to form a conductive seed layer (16) (S1); and a columnar conductor thickened layer (18) is formed over the conductive seed layer (16), the conductor thickened layer (18) and the conductive seed layer (16) constituting a conductor post (20) (S2).

Classes IPC  ?

• H01L 23/488 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes formées de structures soudées
• H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
• H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions

Abrégé

Provided are a carrier (10) and a manufacturing method therefor, and a method for manufacturing a core-less package substrate using the carrier (10). The method for manufacturing the carrier (10), which is used in the core-less package substrate (100), comprises: step S1, forming a cured resin (12); and step S2, forming an easily-strippable conductor layer (16) on the surface (14) of the cured resin (12), wherein the binding force between the conductor layer (16) and the cured resin (12) is 0.01-0.05 N/mm.

Classes IPC  ?

• H01L 21/58 - Montage des dispositifs à semi-conducteurs sur des supports
• H01L 23/12 - Supports, p. ex. substrats isolants non amovibles

Abrégé

A single-layer circuit board, a multi-layer circuit board, and manufacturing methods therefor. The method for manufacturing the single-layer circuit board (10) comprises the following steps: drilling a hole on a substrate (11), the hole comprising a blind hole and/or a through hole (S1); on a surface (12) of the substrate, forming a photoresist layer having a circuit negative image (S2); forming a conductive seed layer on the surface (12) of the substrate and a hole wall (19) of the hole (S3); removing the photoresist layer, and forming a circuit pattern on the surface (12) of the substrate (S4). Step S3 comprises implanting a conductive material below the surface (12) of the substrate and below the hole wall (19) of the hole via ion implantation, and forming an ion implantation layer (131) acting as at least part of the conductive seed layer.

Classes IPC  ?

• H05K 3/42 - Trous de passage métallisés

Abrégé

A method for manufacturing a flexible copper clad laminate with a metalized through-hole. The method comprises: forming a hole structure on a flexible organic film (101); forming a conductive seed crystal layer on the wall of the hole structure and the surface of the flexible organic film (102); and forming a metal conductor layer on the conductive seed crystal layer (103). The method can simplify the process of manufacturing a flexible copper clad laminate with a metalized through-hole, and can improve conductive performance of the metalized through-hole in the flexible copper clad laminate.

Classes IPC  ?

• H05K 3/42 - Trous de passage métallisés