The method for preparing a solar cell includes providing a substrate having a first surface and a second surface opposite to the first surface; forming a doped layer and a first passivation layer stacked sequentially in a direction away from the substrate on the first surface; forming a second passivation layer on the second surface; forming multiple first grid line electrodes arranged at intervals on the surface of the first passivation layer away from the substrate, and forming multiple second grid line electrodes arranged at intervals on the surface of the second passivation layer away from the substrate; performing a laser processing on the multiple first grid line electrodes and an adjacent region of the multiple first grid line electrodes, and applying a reverse current between the multiple first grid line electrodes and the multiple second grid line electrodes.
Disclosed are a solar cell and a photovoltaic module. The solar cell includes a substrate, having a first surface, having a metal pattern region and a non-metal pattern region, a first passivation contact structure, located in the metal pattern region and including a first tunneling layer and a first doped conductive layer stacked in a direction away from the substrate, and a second passivation contact structure, including a second tunneling layer and a second doped conductive layer stacked in the direction away from the substrate, and having a first portion over the non-metal pattern region and a second portion over the first passivation contact structure, and a top surface of the first portion of the second passivation contact structure is not further away from the substrate than a top surface of the second portion of the second passivation contact structure.
Embodiments of the present disclosure provide a solar cell and a photovoltaic module. The solar cell includes: a substrate having a front surface and a rear surface, a first doped polycrystalline silicon layer doped with N-type dopant ions and disposed over the front surface or over the rear surface, and a second doped polycrystalline silicon layer doped with P-type dopant ions and disposed over the rear surface. A surface of the first doped polycrystalline silicon layer away from the substrate has a plurality of first protrusion structures. A surface of the second doped polycrystalline silicon layer away from the substrate has a plurality of second protrusion structures. An average thickness of the first protrusion structures is greater than an average thickness of the second protrusion structures, and a thickness of the first doped polycrystalline silicon layer is not greater than a thickness of the second doped polycrystalline silicon layer.
H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
H01L 31/068 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] caractérisés par au moins une barrière de potentiel ou une barrière de surface les barrières de potentiel étant uniquement du type homojonction PN, p.ex. cellules solaires à homojonction PN en silicium massif ou cellules solaires à homojonction PN en couches minces de silicium polycristallin
4.
ELECTRODE STRUCTURE, SOLAR CELL, AND PHOTOVOLTAIC MODULE
An electrode structure, a solar cell, and a photovoltaic module are provided. The electrode structure includes: busbars extending along a first direction and each including two sub-busbars arranged opposite to each other along a second direction intersecting with the first direction, each of the sub-busbars includes first sub-portions and second sub-portions that are spaced at intervals; fingers extending along the second direction and arranged at two sides of the busbars, the fingers are connected to the sub-busbars; and electrode pads sandwiched between the first sub-portions of the two sub-busbars and connected to the first sub-portions, the first sub-portion of at least one of the sub-busbars protrude towards a side away from the electrode pads.
Disclosed are a solar cell and a photovoltaic module. The solar cell includes a substrate and a doped semiconductor layer disposed on the substrate. The solar cell further includes holes distributed across an edge region of the doped semiconductor layer, and a respective hole of the holes extending through at least the doped semiconductor layer and being filled with a passivation material. The solar cell further includes a passivation layer formed on a side of the doped semiconductor layer away from the substrate, and a plurality of electrodes arranged at intervals along a first direction, extending through the passivation layer and in electrical contact with the doped semiconductor layer.
H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
H01L 31/0288 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des éléments du groupe IV de la classification périodique caractérisés par le matériau de dopage
H01L 31/068 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] caractérisés par au moins une barrière de potentiel ou une barrière de surface les barrières de potentiel étant uniquement du type homojonction PN, p.ex. cellules solaires à homojonction PN en silicium massif ou cellules solaires à homojonction PN en couches minces de silicium polycristallin
6.
SOLAR CELL, METHOD FOR MANUFACTURING SOLAR CELL, AND PHOTOVOLTAIC MODULE
A solar cell, a method for manufacturing the same, and a photovoltaic module are provided. The solar cell includes a substrate, first and second doped parts, and first electrodes. The substrate has a first surface including first regions and second regions arranged alternatingly in a first direction. Each of the first and second doped parts is located on a corresponding first and second region, respectively and is separated from each other. Each first electrode and a third doped part are located on the corresponding first doped part. On the first doped part, the third doped part is located on at least one side of the first electrode in the first direction and is separated from the adjacent first electrode. The first doped parts are doped with dope elements different from the second doped parts and the third doped parts.
H01L 31/077 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] caractérisés par au moins une barrière de potentiel ou une barrière de surface les barrières de potentiel étant uniquement du type PIN, p.ex. cellules solaires PIN en silicium amorphe les dispositifs comprenant des matériaux monocristallins ou polycristallins
Provided are a solar cell, a tandem solar cell, and a photovoltaic module. The solar cell includes a substrate, a doped conductive layer, and a dielectric layer. The substrate has a first surface, where the first surface includes electrode regions and non-electrode regions that are alternatingly arranged along a first direction. The doped conductive layer is formed over the first surface of the substrate. The doped conductive layer includes first conductive portions and at least one second conductive portion. Each first conductive portion is formed over a respective electrode region of the electrode regions, and each respective second conductive portion is formed over a part of a non-electrode region of the non-electrode regions The dielectric layer is between the first surface and the doped conductive layer.
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
Disclosed are a solar cell, a tandem solar cell, and a photovoltaic module. The solar cell includes a substrate, a doped semiconductor layer, a passivation layer and a plurality of electrodes. The substrate is provided with textured structures on a portion of a surface of the substrate. The doped semiconductor layer is disposed on the substrate. The solar cell further includes holes extending through the doped semiconductor layer, and corresponding to the textured structures, respectively, and a bottom of a respective hole exposes at least a portion of a corresponding textured structure. The passivation layer is formed over a surface of the doped semiconductor layer away from the substrate, fills the holes. The plurality of electrodes are arranged along a first direction, pass through the passivation layer and are in electrical contact with the doped semiconductor layer.
Provided are a solar cell, a method for preparing a solar cell, a tandem solar cell, and a photovoltaic module. The solar cell includes a substrate, a doped conductive layer, and a dielectric layer. The substrate has a first surface, where the first surface includes electrode regions and non-electrode regions that are alternatingly arranged along a first direction. The doped conductive layer is formed over the first surface of the substrate. The doped conductive layer includes first conductive portions and at least one second conductive portion. Each respective first conductive portion of the first conductive portions is formed over a respective electrode region of the electrode regions, and each respective second conductive portion of the at least one second conductive portion is formed over a part of a non-electrode region of the non-electrode regions. The dielectric layer is between the first surface and the doped conductive layer.
A solar cell is provided, including: a substrate including a center region and edge regions respectively arranged on two opposing sides of the center region, fingers arranged at intervals along the first direction and extending along a second direction, pad groups arranged at intervals along the second direction, and busbars arranged at intervals along the second direction. The fingers including a number of fingers in the center region, each pad group includes pads arranged at intervals along the first direction, and the pads include a number of pads in the center region that are respectively connected to the number of fingers in the center region. Each busbar is connected to a respective pad group of some of the pad groups, and at least one pad group is disposed between two adjacent busbars.
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
Provided are a solar cell, a method for preparing a solar cell, and a photovoltaic module, relating to the field of photovoltaics. The solar cell includes a substrate, a dielectric layer and a doped semiconductor layer which are stacked, a passivation layer, and electrodes. The substrate has a first surface. The first surface includes an edge region and a center region. The edge region surrounds the center region. The edge region is substantially flush with or closer to the second surface than the center region. The dielectric layer is formed over the center region. The passivation layer covers the edge region and a surface of the doped semiconductor layer facing away the dielectric layer. The electrodes are located in the center region, and penetrate the passivation layer in a thickness direction to be in electrical contact with the doped semiconductor layer.
Embodiments of the present disclosure relate to a solar cell and a photovoltaic module. The solar cell includes: a substrate, a tunneling layer formed on a rear surface of the substrate, and a doped conductive layer formed on the tunneling layer. The tunneling layer includes first regions and second regions, the first regions interleave with the second regions in a first direction, and the first regions include first dopant atoms. The doped conductive layer includes first doped regions formed on the first regions and second doped regions formed on the second regions. The first doped regions and the second doped regions have different doping types, the first doped regions include the first dopant atoms, and an atomic percentage of the first dopant atoms in the first doped regions is lower than an atomic percentage of the first dopant atoms in the first regions.
H01L 31/06 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] caractérisés par au moins une barrière de potentiel ou une barrière de surface
A solar cell includes: a substrate having a front surface and a opposite rear surface; a first dielectric layer formed over the rear surface; a first doped conductive layer formed over a surface of the first dielectric layer away from the substrate; grooves arranged alternatingly in a first direction, penetrating the first doped conductive layer and the first dielectric layer, and extending into inside of the substrate; a second dielectric layer formed over a bottom surface of the grooves; a second doped conductive layer formed over a surface of the second dielectric layer away from the substrate; and a doped layer aligned with the second doped conductive layer and located between the second dielectric layer and the substrate. The first doped conductive layer and the doped layer are doped with a first dopant element, and the substrate and the second doped conductive layer are doped with a second dopant element.
A solar cell, a manufacturing method thereof, and a photovoltaic module are provided. The solar cell includes a substrate having electrode regions and non-electrode regions that are alternatingly arranged in a first direction, where the non-electrode regions include first regions and second regions; a dielectric layer formed over the electrode regions and the second regions and not formed over the first regions; a doped conductive layer formed over the dielectric layer; a passivation layer formed over the first regions and the doped conductive layer; and a plurality of electrodes.
A solar cell is provided, including: a substrate having a first surface including first regions and second regions, a first passivation contact structure formed on the first and second regions, second passivation contact structures formed on the first passivation contact structure, first passivation films formed on the first passivation contact structure, and first electrodes extending in a second direction perpendicular to the first direction. Each second passivation contact structure has an orthographic projection on the first surface in a respective first region, and each first passivation film has an orthographic projection on the first surface in a respective second region. Each first electrode covers a top surface of a respective second passivation contact structure and at least part of two opposing sidewalls of the respective second passivation contact structure in the first direction, and is in electrical contact with the respective second passivation contact structure.
H01L 31/0376 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur structure cristalline ou par l'orientation particulière des plans cristallins comprenant des semi-conducteurs amorphes
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
H01L 31/20 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - les dispositifs ou leurs parties constitutives comprenant un matériau semi-conducteur amorphe
Shanghai Jinko Green Energy Enterprise Management Co., LTD. (Chine)
Zhejiang Jinko Solar Co., Ltd. (Chine)
Inventeur(s)
Yu, Ding
Li, Wenqi
Zhao, Shijie
Zhang, Xiaowen
Chai, Jialei
Zhang, Xinyu
Jin, Hao
Yang, Jie
Abrégé
j material, and a ratio of j/i is 0.1˜0.6; and a tunneling oxide layer and a doped conductive layer sequentially formed on the rear surface and in a direction away from the rear surface, wherein the doped conductive layer and the substrate have a doping element of a same conductivity type.
H10F 19/80 - Encapsulations ou conteneurs pour des dispositifs intégrés, ou des ensembles de plusieurs dispositifs, comportant des cellules photovoltaïques
H10F 77/122 - Matériaux actifs comportant uniquement des matériaux du groupe IV
H10F 77/70 - Textures de surface, p. ex. structures pyramidales
17.
SOLAR CELL, METHOD FOR PREPARING THE SAME, AND PHOTOVOLTAIC MODULE
Provided are a solar cell, a method for preparing a photovoltaic module, and a photovoltaic module. The solar cell includes: a substrate, a first dielectric layer and a first doped conductive layer. The substrate has a first surface and a second surface opposite to the first surface. The first surface includes alternating electrode regions and non-electrode regions, and transition regions, where each respective transition region of the transition regions is abutted on one side by a respective electrode region of the electrode regions and on an opposing side by a respective non-electrode region of the non-electrode regions, and has a first surface structure, the first surface structure includes a plurality of prism structures inclined towards the respective electrode region, and the plurality of the prism structures are sequentially disposed at least along an extension direction of the transition region. The first dielectric layer is formed over the respective electrode region.
H01L 31/075 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] caractérisés par au moins une barrière de potentiel ou une barrière de surface les barrières de potentiel étant uniquement du type PIN, p.ex. cellules solaires PIN en silicium amorphe
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
18.
Solar cell, method for preparing the same, and photovoltaic module
Provided are a solar cell, a method for preparing a photovoltaic module, and a photovoltaic module. The solar cell includes: a substrate, a first dielectric layer and a first doped conductive layer. The substrate has a first surface and a second surface opposite to the first surface. The first surface includes alternating electrode regions and non-electrode regions, and transition regions, each respective transition region of the transition regions being abutted on one side by a respective electrode region of the electrode regions and on an opposing side by a respective non-electrode region of the non-electrode regions. The transition region includes a plurality of spaced first pyramid structures and a plurality of micro-convex structures, and a one-dimensional size of a bottom of a respective micro-convex structure is smaller than a one-dimensional size of a bottom of a respective first pyramid structure.
A solar cell is provided, including a substrate having a first surface and a second surface, the first surface having a textured structure including protrusion structures, at least one doped semiconductor layer each formed over one of the first surface and the second surface, at least one passivation film each formed on a respective doped semiconductor layer, and electrodes penetrating a respective passivation film to be in electrical contact with the respective doped semiconductor layer. Each doped semiconductor layer has a surface facing away from the substrate and provided with recesses, and each recess has a size that is smaller than a size of any of the protrusion structures. Each passivation film has at least one portion formed in at least one of the recesses, and each electrode has at least one portion formed in at least one of the recesses.
H01L 31/068 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] caractérisés par au moins une barrière de potentiel ou une barrière de surface les barrières de potentiel étant uniquement du type homojonction PN, p.ex. cellules solaires à homojonction PN en silicium massif ou cellules solaires à homojonction PN en couches minces de silicium polycristallin
20.
SOLAR CELL, METHOD FOR MANUFACTURING THE SAME, AND PHOTOVOLTAIC MODULE
Disclosed are a solar cell, a method for manufacturing the same, and a photovoltaic module. The solar cell includes: a substrate having a front side and back side opposite to each other, a first doped layer and a second doped layer alternately arranged along a first direction on the back side, and a first electrode and a second electrode. The first doped layer and the second doped layer adjacent to the first doped layer are separated by an isolation region. A portion of the back side located at the isolation region is exposed. The first doped layer has a first slope sidewall facing the isolation region, and the second doped layer has a second slope sidewall facing the isolation region.
H10F 10/14 - Cellules photovoltaïques ayant uniquement des barrières de potentiel du type à homojonction PN
H10F 19/80 - Encapsulations ou conteneurs pour des dispositifs intégrés, ou des ensembles de plusieurs dispositifs, comportant des cellules photovoltaïques
The photovoltaic cell includes a silicon substrate, a first passivation layer, a second passivation layer, at least one silicon oxynitride layer, and at least one silicon nitride layer. The second passivation layer includes a first silicon oxide layer and at least one aluminum oxide layer, and a thickness of the at least one aluminum oxide layer is in a range of 4 nm to 20 nm. The number of silicon atoms is greater than the number of oxygen atoms in the at least one silicon oxynitride layer and the number of oxygen atoms is greater than the number of nitrogen atoms in the at least one silicon oxynitride layer. The first silicon oxide layer is disposed between the substrate and the at least one aluminum oxide layer, and a thickness of the first silicon oxide layer is in a range of 0.1 nm to 5 nm.
Embodiments of the present disclosure relate to the technical field of photovoltaic technologies, and provide a tandem cell and a photovoltaic module. The tandem cell includes: a bottom cell, including: a substrate having a front surface and a back surface that are opposite to each other, and a semiconductor layer disposed on the back surface of the substrate and is doped with doping ions, where doping concentration of doping ions in a part of the semiconductor layer close to the substrate is less than doping concentration of doping ions in a part of the semiconductor layer away from the substrate; an intermediate layer disposed on a side surface of the semiconductor layer away from the substrate; and a top cell disposed on a side of the intermediate layer away from the substrate. In this way, performance of the tandem cell may be at least improved.
H10K 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un composant organique sensible aux rayonnements couvert par le groupe
H10K 30/57 - Dispositifs photovoltaïques [PV] comprenant des jonctions multiples, p. ex. des cellules PV en tandem
Embodiments of the disclosure relate to a solar cell and a photovoltaic module, where the solar cell includes a bottom cell, a recombination layer, and a top cell which are stacked in sequence in a first direction. The bottom cell includes a first semiconductor conductive layer, a substrate, and a second semiconductor conductive layer that are stacked in sequence in the first direction, and the second semiconductor conductive layer is disposed between the substrate and the top cell. The recombination layer is disposed between the second semiconductor conductive layer and the top cell and includes transparent conductive layers and at least one metal layer that are alternatingly stacked in the first direction, a top layer and a bottom layer of the recombination layer are both transparent conductive layers.
H01L 31/0687 - Cellules solaires à jonctions multiples ou dites "tandem"
H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
Embodiments of the present disclosure relate to a solar cell and a photovoltaic module. The solar cell includes a bottom cell, a recombination layer, and a top cell stacked in a first direction. The bottom cell includes at least one first electrode, a first semiconductor conductive layer, a substrate, and a second semiconductor conductive layer stacked in the first direction. The recombination layer includes a dielectric layer and a first transparent conductive layer stacked in the first direction, the second semiconductor conductive layer has a first surface facing towards the top cell, and the dielectric layer is formed on at least a portion of the first surface. In this way, the photoelectric conversion efficiency of the solar cell can be at least improved.
A solar cell, a manufacturing method thereof, and a photovoltaic module are provided. The solar cell includes a substrate having electrode regions and non-electrode regions that are alternatingly arranged in a first direction, where the non-electrode regions of the substrate include connection regions, first regions, and second regions; a dielectric layer formed over the electrode regions, the second regions, and the connection regions; a doped conductive layer formed over the dielectric layer; a passivation layer formed over the first regions and the doped conductive layer; and a plurality of electrodes.
A solar cell is provided, including a substrate having a first surface and a second surface, a first dielectric layer formed on the first surface, a first doped polysilicon layer formed on the first dielectric layer, a second dielectric layer formed on the second surface, a second doped polysilicon layer formed on the second dielectric layer, a first passivation layer formed on the first doped polysilicon layer, a second passivation layer formed on the second doped polysilicon layer, first electrodes and second electrodes. The first doped polysilicon layer is doped with an N-type doping element and has a surface having a first roughness, the second doped polysilicon layer is doped with a P-type doping element and has a surface having a second roughness, and the second roughness is less than the first roughness.
H01L 31/068 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] caractérisés par au moins une barrière de potentiel ou une barrière de surface les barrières de potentiel étant uniquement du type homojonction PN, p.ex. cellules solaires à homojonction PN en silicium massif ou cellules solaires à homojonction PN en couches minces de silicium polycristallin
A method for manufacturing a back-contact solar cell and a back-contact solar cell are provided. The method includes the following. A substrate having a first surface is provided, where the first surface includes first regions and second regions that are alternatingly arranged in a preset direction. First doping layers are formed over the first regions, second doping layers having different conductivity types of the first doping layers are formed over the second regions, and a mask layer is formed on the first doping layers. The respective second doping layer includes two first portions and a second portion arranged in the preset direction, the first portion is abutted on the respective first doping layer.
A solar cell, a manufacturing method thereof, and a photovoltaic module are provided. The solar cell includes a substrate having electrode regions and non-electrode regions that are alternatingly arranged in a first direction, where the non-electrode regions of the substrate include a plurality of first regions and a plurality of second regions; a doped conductive layer formed over the dielectric layer; a passivation layer formed over the first regions and the doped conductive layer; and a plurality of electrodes.
A photovoltaic device and a method for mounting a photovoltaic device are provided. The photovoltaic device includes a color steel tile, a bonding layer, and a photovoltaic assembly. The color steel tile includes an angle relaxation portion. The bonding layer is arranged on a top wall of the angle relaxation portion. The photovoltaic assembly is located on one side of the color steel tile and connected to the color steel tile through the bonding layer. The bonding layer includes a first bonding portion and a second bonding portion arranged along a first direction. In the first direction, a ratio of a dimension of the first bonding portion to a dimension of the second bonding portion ranges from 0.1 to 0.5. The first bonding portion temporarily fix the photovoltaic assembly, while the second bonding portion mainly fix the photovoltaic assembly.
Embodiments of the disclosure provide a method for manufacturing a photovoltaic module, including: providing at least one cell string, an end portion of each cell overlaps with an end portion of an adjacent cell to form a corresponding overlapping welding region; for each overlapping welding region, forming a film insertion opening between stacked end portions of the two adjacent cells forming the each overlapping welding region; providing at least one film strip, and inserting a part of each film strip into a corresponding film insertion opening, such that a width of the part of the each film strip inserted into the corresponding film insertion opening is larger than a width of the remaining part of the each film strip; and closing each film insertion opening.
Provided is a solar cell including: a silicon substrate, a passivation layer, a first antireflection layer, a second antireflection layer, a third antireflection layer, a tunneling dielectric layer formed over the rear surface, and a doped conductive layer formed over the tunneling dielectric layer. The silicon substrate includes at least one of P, Bi, Sb or As. The passivation layer includes an AlxOy material and is formed over the front surface, where 1/3≤x/y≤3. The first antireflection layer includes a SiNj material and is formed over the passivation layer, where 0.5≤i/j≤10. The second antireflection layer includes a SicNdOe material and is formed over the first antireflection layer, where 0.5≤c/d≤10, and 0.25≤d/e≤2. The third antireflection layer includes a SiaOb material and is formed over the second antireflection layer, where 0.5≤a/b≤3.
Embodiments of the present disclosure relate to a solar cell and a photovoltaic module. The solar cell includes a thin-film solar cell and a bottom cell stacked in a first direction. The bottom cell includes: a transparent conductive layer, a first doped conductive layer, an intrinsic amorphous silicon layer, a substrate, a second doped conductive layer, and one or more electrodes that are stacked in the first direction. The transparent conductive layer is between the thin-film solar cell and the first doped conductive layer, and the one or more electrodes are formed on a side of the second doped conductive layer away from the substrate, the one or more electrodes are in ohmic contact with the second doped conductive layer. The first doped conductive layer includes a doped amorphous silicon layer or a doped microcrystalline silicon layer.
The solar cell includes a substrate having electrode regions and non-electrode regions defined alternatively, where a surface of the electrode regions has a first surface structure, a surface of the non-electrode regions has a second surface structure, the first surface structure has a smaller roughness than the second surface structure, and the second surface structure includes multiple first protrusion structures. The solar cell further includes a tunneling dielectric layer, and a first doped conductive layer arranged on the tunneling dielectric layer. The solar cell further includes a passivation layer arranged on the non-electrode regions and the first doped conductive layer and a first electrode arranged in the electrode regions. The first electrode penetrates the passivation layer to be in electrical contact with the first doped conductive layer.
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H01L 31/153 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails structurellement associés, p.ex. formés dans ou sur un substrat commun, avec une ou plusieurs sources lumineuses électriques, p.ex. avec des sources lumineuses électroluminescentes, et en outre électriquement ou optiquement couplés avec lesdites sour la ou les sources lumineuses étant commandées par le dispositif à semi-conducteur sensible au rayonnement, p.ex. convertisseurs d'images, amplificateurs d'images ou dispositifs de stockage d'image les sources lumineuses et les dispositifs sensibles au rayonnement étant tous des dispositifs semi-conducteurs caractérisés par au moins une barrière de potentiel ou de surface formés dans, ou sur un substrat commun
Embodiments of the present disclosure relate to a solar cell and a photovoltaic module. The solar cell includes a thin-film solar cell and a bottom cell stacked in a first direction. The bottom cell has a stacked structure in the first direction including: a transparent conductive layer, a first doped conductive layer, an intrinsic amorphous silicon layer, a substrate, a selective passivation layer, and one or more electrodes. The selective passivation layer covers a portion of a surface of the substrate away from the intrinsic amorphous silicon layer and includes a plurality of passivation contact structures arranged at intervals in a second direction. Each passivation contact structure includes a tunneling layer and a second doped conductive layer stacked in the first direction. The electrodes are formed on a surface of the selective passivation layer away from the substrate and are in ohmic contact with second doped conductive layers.
H01L 31/0465 - Modules PV composés d'une pluralité de cellules solaires en couches minces déposées sur un même substrat comportant des structures particulières pour la connexion électrique de cellules PV adjacentes dans un module
H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
A solar cell and a photovoltaic module are disclosed. The photovoltaic module includes a substrate, busbars, and at least one marker. The busbars are arranged on a same side of the substrate, and include at least a first busbar and a second busbar, the first busbar and the second busbar have opposite polarities, the first busbar has a first pad, the second busbar has a second pad, the first pad and the second pad are arranged sequentially along a straight line parallel to an arrangement direction of the busbars, and a distance from a marker to the first pad is different from a distance from a same marker to the second pad.
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
The present disclosure relates to the technical field of photovoltaic modules, and in particular, to a solar cell and a photovoltaic module. The solar cell includes a substrate and a positive gate line and a negative gate line that are arranged on a back surface of the substrate, wherein the positive gate line and the negative gate line are alternately arranged and are not connected. An edge portion of at least one side of the back surface in at least one direction is an insulating portionoverlap with one anotheroverlap with one another.
H01L 31/0475 - Matrices de cellules PV formées par des cellules à configuration planaire, p.ex. répétitives, sur un substrat semi-conducteur unique; Micro-matrices de cellules PV
H01L 31/05 - Moyens d’interconnexion électrique entre les cellules PV à l’intérieur du module PV, p.ex. connexion en série de cellules PV
A solar cell including: substrate having front and back surfaces, the back surface includes first, second and gap regions, the first and second regions are staggered and spaced from each other in a first direction, and each gap region is provided between adjacent first and second regions, first pyramidal texture structure regions are formed corresponding to gap regions and distance between top and bottom thereof is 2-4 μm; first conductive layer formed over the first region; second conductive layer formed over the second region, the second conductive layer has conductivity type opposite to the first conductive layer; first electrode forming electrical contact with the first conductive layer; second electrode forming electrical contact with the second conductive layer; and boundary region between the gap region and the first and/or second conductive layer adjacent thereto, and the boundary region includes strip or line patterned texture structures arranged at intervals.
The tandem cell includes a bottom cell including a substrate. The substrate has a first side and a second side, the first side has a first textured surface including at least one first protrusion structure. The bottom cell further includes a tunneling dielectric layer and a doped conductive layer. A surface of the doped conductive layer has a micro textured surface including at least one micro protrusion structure, and the micro protrusion structure is smaller than the first protrusion structure. The tandem cell further includes a composite layer conformal to the micro textured surface. The tandem cell further includes a top cell formed on the composite layer. The top cell includes a first transport layer, a perovskite substrate, a second transport layer, a transparent conductive layer, and an anti-reflection layer stacked sequentially. The first transport layer is conformal to the micro textured surface.
H10K 71/12 - Dépôt d'une matière active organique en utilisant un dépôt liquide, p. ex. revêtement par centrifugation
H10K 71/16 - Dépôt d'une matière active organique en utilisant un dépôt physique en phase vapeur [PVD], p. ex. un dépôt sous vide ou une pulvérisation cathodique
H10K 71/20 - Modification de la forme de la couche active dans les dispositifs, p. ex. mise en forme
H10K 71/30 - Dopage de couches actives, p. ex. de couches de transport d'électrons
SHANGHAI JINKO GREEN ENERGY ENTERPRISE MANAGEMENT CO., LTD. (Chine)
ZHEJIANG JINKO SOLAR CO., LTD. (Chine)
Inventeur(s)
Yu, Kun
Liu, Changming
Zhang, Xinyu
Abrégé
A solar cell includes a semiconductor substrate, in which a rear surface of the semiconductor substrate having non-pyramid-shaped microstructures, the non-pyramid-shaped microstructures include two or more first substructures at least partially stacked on one another, and a one-dimensional size of the surface of the outermost first substructure is less than or equal to 45 μm; a first passivation layer located on a front surface of the semiconductor substrate; first and second tunnel oxide layers located on the non-pyramid-shaped microstructures; first and second doped conductive layers located on a surface of the first and second tunnel oxide layers, the first and second doped conductive layer has different conductive types; a second passivation layer located on a surface of the first and second doped conductive layers; and electrodes formed by penetrating through the second passivation layer to be in contact with the first and second doped conductive layers.
H01L 31/0368 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur structure cristalline ou par l'orientation particulière des plans cristallins comprenant des semi-conducteurs polycristallins
H01L 31/068 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] caractérisés par au moins une barrière de potentiel ou une barrière de surface les barrières de potentiel étant uniquement du type homojonction PN, p.ex. cellules solaires à homojonction PN en silicium massif ou cellules solaires à homojonction PN en couches minces de silicium polycristallin
40.
Method for welding cell strings and series welding machine
Embodiments of the present disclosure provide a method for welding cell strings and a series welding machine. The method includes: forming an arrangement of a plurality of solar cells; inspecting the arrangement of the plurality of solar cells; providing a plurality of initial welding strips including first initial welding strips and second initial welding strips, the first initial welding strips interleave with the second initial welding strips in a first direction; cutting each of the first initial welding strips at first cutting positions, and cutting each of the second initial welding strips at second cutting positions, to obtain a plurality of welding strips; moving each welding strip in a second direction to form a set of welding strips; transferring the set of welding strips onto the arrangement of the plurality of solar cells; and welding the plurality of welding strips to corresponding solar cells to form a cell string.
B23K 31/00 - Procédés relevant de la présente sous-classe, spécialement adaptés à des objets ou des buts particuliers, mais non couverts par un seul des groupes principaux
B23K 31/12 - Procédés relevant de la présente sous-classe, spécialement adaptés à des objets ou des buts particuliers, mais non couverts par un seul des groupes principaux relatifs à la recherche des propriétés, p. ex. de soudabilité, des matériaux
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
H01L 31/05 - Moyens d’interconnexion électrique entre les cellules PV à l’intérieur du module PV, p.ex. connexion en série de cellules PV
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
41.
Method for manufacturing photovoltaic module and photovoltaic module
A method for manufacturing photovoltaic module includes: providing solar cells and a solder strip; applying insulating adhesive on rear surface of the solar cells; laying the solar cells along a first direction; placing the solder strip on the solar cells so that, along the first direction, one end of the solder strip abuts against a positive busbar of one solar cell, and is bonded to the insulating adhesive, and the other end of the solder strip abuts against a negative busbar of another solar cell adjacent thereto, and is bonded to the insulating adhesive; curing the insulating adhesive by irradiation with an ultraviolet lamp, so that the solar cells form a solar cell string; arranging the solar cell strings along a second direction, and connecting to form a photovoltaic cell pack; providing and laminating front packaging structure, the photovoltaic cell pack, and back packaging structure to form the photovoltaic module.
Embodiments of the present disclosure relate to a solar cell and a method for producing the same. The solar cell includes: a substrate having a first textured surface, a plurality of sheet-shaped anti-reflection films, and a plurality of grid lines. A plurality of grid-line areas spaced from each other are formed on the first textured surface, and each grid-line area has a second textured surface. One or more sheet-shaped anti-reflection films of the plurality of sheet-shaped anti-reflection films are formed on a portion of the second textured surface of each grid-line area. Each grid line of the plurality of grid lines is formed on a respective grid-line area, and each grid line is in contact with the one or more sheet-shaped anti-reflection films and with a remaining portion of the second textured surface of the respective grid-line area not covered by any sheet-shaped anti-reflection films.
H01L 31/054 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] Éléments optiques directement associés ou intégrés à la cellule PV, p.ex. moyens réflecteurs ou concentrateurs de lumière
Embodiments of the present disclosure relate to a solar cell and a method for producing the same. The solar cell includes: a substrate having a first textured surface, a plurality of sheet-shaped anti-reflection films, and a plurality of grid lines. A plurality of grid-line areas spaced from each other are formed on the first textured surface, and each grid-line area has a second textured surface. One or more sheet-shaped anti-reflection films of the plurality of sheet-shaped anti-reflection films are formed on a portion of the second textured surface of each grid-line area. Each grid line of the plurality of grid lines is formed on a respective grid-line area, and each grid line is in contact with the one or more sheet-shaped anti-reflection films and with a remaining portion of the second textured surface of the respective grid-line area not covered by any sheet-shaped anti-reflection films. grid linegrid line.
H01L 31/054 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] Éléments optiques directement associés ou intégrés à la cellule PV, p.ex. moyens réflecteurs ou concentrateurs de lumière
A solar cell is provided, including a substrate having a rear surface including P-type regions and N-type regions, first dielectric layers each formed over a N-type region, first doped polysilicon layers each formed on a first dielectric layer and doped with an N-type doping element, second dielectric layers each formed over a P-type region, second doped polysilicon layers each formed on a second dielectric layer and doped with a P-type doping element, a passivation layer formed over surfaces of the first and second doped polysilicon layers, and first and second electrodes penetrating the passivation layer. Each first electrode is electrically connected to a first doped polysilicon layer and each second electrode is electrically connected to a second doped polysilicon layer. A first roughness of a surface of a first doped polysilicon layer is greater than a second roughness of a surface of a second doped polysilicon layer.
H01L 31/068 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] caractérisés par au moins une barrière de potentiel ou une barrière de surface les barrières de potentiel étant uniquement du type homojonction PN, p.ex. cellules solaires à homojonction PN en silicium massif ou cellules solaires à homojonction PN en couches minces de silicium polycristallin
A photovoltaic module and a method for manufacturing photovoltaic module. The photovoltaic module includes a solar cell, a pad, fasteners, and a solder strip. The pad is arranged on the solar cell and includes first, second, and third parts, the first part is connected to the third part through the second part, and along a length direction of the solder strip, a width of the second part is less than a width of the first part and a width of the third part. The fasteners are arranged on a side of the first part facing away from the solar cell and a side of the third part facing away from the solar cell, the solder strip is provided between the fastener in the first part and the fastener in the third part, and the solder strip is connected to the pad through the fastener to form a solar cell string.
H01L 31/05 - Moyens d’interconnexion électrique entre les cellules PV à l’intérieur du module PV, p.ex. connexion en série de cellules PV
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
SHANGHAI JINKO GREEN ENERGY ENTERPRISE MANAGEMENT CO., LTD. (Chine)
ZHEJIANG JINKO SOLAR CO., LTD. (Chine)
Inventeur(s)
Chai, Jialei
Yu, Ding
Zhao, Shijie
Zhang, Xiaowen
Li, Wenqi
Yang, Jie
Zhang, Xinyu
Jin, Hao
Abrégé
A solar cell and a photovoltaic module are provided. The solar cell includes an N-type substrate having a front surface and a rear surface, a passivation stack disposed on the front surface, and a tunneling oxide layer and a doped conductive layer disposed on the rear surface. The passivation stack includes an oxygen-containing dielectric layer including a metal oxide material, a first passivation layer including an oxygen-containing silicon nitride material, and a second passivation layer including a silicon oxynitride material. A thickness of the oxygen-containing dielectric layer is in a range of 1 nm to 15 nm in a direction perpendicular to the front surface, a thickness of the first passivation layer is in a range of 30 nm to 60 nm in the direction perpendicular to the front surface, and a thickness of the second passivation layer is in a range of 20 nm to 40 nm in the direction perpendicular to the front surface.
The solar cell includes a substrate having a first surface and a second surface opposite to the first surface, and multiple first busbars arranged sequentially along a first direction on the first surface of the substrate, where at least one of the multiple first busbars is near at least one of the two opposite edges of the substrate along the first direction includes at least one first widened portion. The solar cell further includes multiple second busbars arranged sequentially along the first direction on the second surface of the substrate, where at least one of the multiple second busbars is near at least one of the two opposite edges of the substrate along the first direction includes at least one second widened portion, and each of the at least one second widened portion is larger than each of the at least one first widened portion.
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
The present disclosure relates to a photovoltaic module, a manufacturing method for a photovoltaic module, and a machining device. The photovoltaic module includes solar cell strings and electrode lines. Each of the solar cell strings includes solar cells arranged in parallel, and each of the electrode lines is located on a side of a corresponding solar cell and configured to connect adjacent solar cells to form the solar cell strings. soldering regions are arranged apart along a length direction of the photovoltaic module, connecting members are arranged in the soldering regions, each of the electrode lines is located on a side of a corresponding solar cell provided with the connecting members on the side.
A photovoltaic module includes a plurality of solar cells connected by leads. The solar cells are arranged with a preset gap or are arranged overlapping with one another. A shape of the lead matches arrangement of the solar cells. The lead includes a flat section having a smaller thickness than other sections.
H01L 31/05 - Moyens d’interconnexion électrique entre les cellules PV à l’intérieur du module PV, p.ex. connexion en série de cellules PV
H01L 31/0475 - Matrices de cellules PV formées par des cellules à configuration planaire, p.ex. répétitives, sur un substrat semi-conducteur unique; Micro-matrices de cellules PV
H01L 31/054 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] Éléments optiques directement associés ou intégrés à la cellule PV, p.ex. moyens réflecteurs ou concentrateurs de lumière
50.
SOLAR CELL, PHOTOVOLTAIC MODULE, AND METHOD FOR MANUFACTURING A SILICON SUBSTRATE
Provided are a solar cell, a photovoltaic module, and a method for manufacturing a silicon wafer. The solar cell includes a silicon substrate in a rectangular shape, and 13 to 20 busbars. The busbars are sequentially arranged along a width direction of the solar cell at an equal spacing of a mm. The silicon substrate includes a first edge and a second edge opposite to the first edge in the width direction of the solar cell. A distance between the first edge of the silicon substrate and an outermost busbar adjacent to the first edge is b mm, where a−1≤2b≤a+1.
A method for manufacturing a silicon wafer, a solar cell, and a photovoltaic module. The method includes: selecting four arc segments on a circumference of the silicon ingot according to chamfering parameters of the solar wafer; squaring the silicon ingot along lines connecting adjacent chamfered arc segments to obtain a rectangular body having a rectangular cross section with chamfers; and cutting the rectangular body along a direction perpendicular to a length direction of the silicon ingot to obtain a rectangular silicon wafer with chamfers.
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
52.
METHOD FOR PREPARING SILICON SINGLE CRYSTAL ROD AND SINGLE CRYSTAL FURNACE
A method for preparing a silicon single crystal rod is provided. The method includes a crystal pulling process including a melt contacting operation, a seeding operation, a shoulder releasing operation, a shoulder rotating operation, a diameter equalizing operation, and a closing operation in sequence. Each operation of the crystal pulling process has a furnace pressure less than or equal to 500 Pa and a pumping rate greater than or equal to 1000 m3/h.
A photovoltaic module includes a first cover plate, a first adhesive film, a cell string, a second adhesive film and a second cover plate. The first cover plate has a first surface, facing the cell string and including a central area and an edge area surrounding the central area. The first adhesive film includes a first sub-adhesive film located on at least part of the edge area, and a second sub-adhesive film located on a surface of the first sub-adhesive film away from the first surface and having an orthographic projection on the first surface at least covering the central area and part of the edge area. Material of part of the first sub-adhesive film facing the cell string is the same as material of part of the second adhesive film facing the cell string, and material of part of the second sub-adhesive film facing the cell string is POE.
Provided are a solar cell and a photovoltaic module. The solar cell includes: an N-type silicon substrate, where the N-type silicon substrate has a front surface and a rear surface opposite to the front surface; a passivation layer that contains an aluminum oxide material and that is located on the front surface; a first antireflection layer, a second antireflection layer, and a third antireflection layer that are located on a side of the passivation layer away from the substrate and stacked in a direction in which the substrate points to the passivation layer, where the first antireflection layer contains a silicon nitride material, the second antireflection layer contains a silicon oxynitride material; and the third antireflection layer contains a silicon oxide material; a tunneling dielectric layer located on the rear surface; and a doped conductive layer located on the tunneling dielectric layer.
The solar cell includes a substrate having a central region and two peripheral regions. The solar cell further includes multiple finger electrodes arranged at intervals along the first direction, and the multiple finger electrodes include multiple first finger electrodes and multiple second finger electrodes. Each of the multiple first finger electrodes includes first body portions and first widened portions arranged alternatingly along the second direction, each of the multiple second finger electrodes includes second body portions and second widened portions arranged alternatingly along the second direction, and the first widened portions are arranged and aligned to the second widened portions. A respective first widened portion of a respective first finger electrode in two first finger electrodes farthest from the central region on the substrate has a larger orthographic projection than a respective first widened portion of each of two first finger electrodes closest to the central region.
A photovoltaic module and a method for a photovoltaic module are provided. The photovoltaic module includes a photovoltaic cell pack, a front packaging structure, and a back packaging structure. The photovoltaic cell pack includes solar cell strings spaced apart along a width direction of the photovoltaic module. The front packaging structure is arranged on a light-facing surface of the photovoltaic cell pack, and the front packaging structure includes a front sheet and a front packaging layer. The back packaging structure is arranged on a backlight surface of the photovoltaic cell pack, and the back packaging structure includes a back sheet and a back packaging layer. The back sheet and the front sheet jointly clamp the front packaging layer, the photovoltaic cell pack, and the back packaging layer. A distance L1 between two adjacent solar cell strings along the width direction of the photovoltaic module satisfies: 0.3 mm≤L1≤1.5 mm.
Embodiments of the disclosure provide a method for manufacturing a photovoltaic module, including: providing at least one cell string an end portion of each cell is stacked with an end portion of an adjacent cell to form a corresponding overlapping welding region; for each overlapping welding region, forming a film insertion opening between stacked end portions of the two adjacent cells corresponding to the each overlapping welding region; providing at least one film strip, and inserting a part of each film strip into a corresponding film insertion opening; moving the at least one cell string relative to the at least one film strip; and closing the film insertion openings so that the each film strip is inserted between the two adjacent cells of the corresponding overlapping welding region.
The solar cell includes a substrate having electrode regions and non-electrode regions alternatingly. The electrode regions have a first surface, the non-electrode regions have a second surface, and the first surface has a smaller roughness than the second surface. The solar cell further includes a first tunneling dielectric layer formed over the first surface, a first doped conductive layer arranged on a side of the first tunneling dielectric layer, a passivation layer formed over the second surface and the first doped conductive layer, and at least one first electrode. The at least one first electrode are arranged in the electrode regions, each of the at least one first electrode includes a connecting electrode formed over the electrode regions and multiple spot electrodes. The multiple spot electrodes are arranged below the connecting electrode and connected to the connecting electrode.
The solar cell includes a substrate, a tunneling layer disposed on a first surface, and a first doped conductive layer disposed on a surface of the tunneling layer. The solar cell further includes a second doped conductive layer disposed on a surface of the first doped conductive layer, where the second doped conductive layer includes: multiple first portions and multiple second portions arranged alternately in a direction perpendicular to a predetermined direction and perpendicular to a thickness direction of the second doped conductive layer, each of the multiple first portions and the multiple second portions extends along the predetermined direction, a doping element concentration of the first doped conductive layer is lower than a doping element concentration of each of the multiple first portions, and the doping element concentration of each of the multiple first portions is lower than a doping element concentration of each of the multiple second portions.
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
H01L 31/0376 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur structure cristalline ou par l'orientation particulière des plans cristallins comprenant des semi-conducteurs amorphes
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
60.
Photovoltaic curtain wall and method for manufacturing photovoltaic curtain wall
A photovoltaic curtain wall and a method for manufacturing the photovoltaic curtain wall are provided. The photovoltaic curtain wall includes a first cover plate, a cell string, and a second cover plate stacked sequentially in a first direction; and an encapsulation film including a first adhesive film and a second adhesive film, the first adhesive film is attached to the first cover plate, and the second adhesive film is attached to the second cover plate. The second cover plate has a thickness greater than or equal to an equivalent thickness, and the first cover plate has a thickness less than the thickness of the second cover plate; and the equivalent thickness is a thickness of a target cover plate that undergoes a preset bending deformation in response to a preset load, and the target cover plate and the second cover plate is made of a same material.
Embodiments of the disclosure provide a method for manufacturing a photovoltaic module and a photovoltaic module. The method includes the following: providing a plurality of cells; selecting at least one cell from the plurality of cells, and for each respective cell of the at least one cell, forming a corresponding solder layer on each respective solder pad of at least one solder pad of the respective cell; and performing a soldering treatment on the respective connecting member and the at least one solder pad and/or the at least one solder layer to connect the respective pair of adjacent cells, wherein the soldering treatment has a heating temperature in a range of 200° C. to 300° C.
Disclosed are a photovoltaic cell, a method for producing the same and a photovoltaic module. The method includes providing a silicon wafer; forming a tunneling oxide layer on the silicon wafer and a P-type amorphous silicon layer over the tunneling oxide layer; forming N-type dopants on the P-type amorphous silicon layer; performing laser processing on the N-type dopants to cause the P-type amorphous silicon layer to be converted into an amorphous silicon layer having alternatingly arranged P-type amorphous silicon and N-type amorphous silicon; removing the N-type dopant on the amorphous silicon layer and forming a protective layer over the amorphous silicon layer; performing processing on the protective layer and the amorphous silicon layer to form a groove and a protrusion; subjecting the silicon wafer to further processing to increase a depth of the groove; removing the protective layer; and subjecting the silicon wafer to high temperature processing.
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
H01L 31/068 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] caractérisés par au moins une barrière de potentiel ou une barrière de surface les barrières de potentiel étant uniquement du type homojonction PN, p.ex. cellules solaires à homojonction PN en silicium massif ou cellules solaires à homojonction PN en couches minces de silicium polycristallin
63.
Solar cell and manufacturing method thereof, and photovoltaic module
A solar cell, a manufacturing method thereof, and a photovoltaic module. The solar cell includes: a semiconductor substrate including first and second surfaces opposite to each other; emitter and first passivation layer formed over the first surface; tunneling layer formed over the second surface; first doped conductive layer and retardation layer formed on the tunneling layer and corresponding to metallization region, the first doped conductive layer is located between the tunneling layer and the retardation layer; second doped conductive layer formed over the tunneling layer and covering the tunneling layer in non-metallization region and the retardation layer, the retardation layer is configured to retard migration of doped element in the second doped conductive layer to the first doped conductive layer; second passivation layer formed over the second doped conductive layer; and second electrode forming contact with the second doped conductive layer and first electrode forming contact with the emitter.
H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
A photovoltaic cell and a photovoltaic module. The photovoltaic cell includes a semiconductor substrate, a passivation layer arranged on a surface of the semiconductor substrate, a plurality busbars, and a plurality of electrode pads arranged on the passivation layer. Each of the plurality of electrode pads are electrically connected to an electrode line, and along a thickness direction of the photovoltaic cell, the plurality of electrode pads are arranged on a side of the plurality of busbars facing away from the passivation layer, or arranged on the passivation layer. Along a thickness direction of the photovoltaic cell, a vertical distance between a highest point of the plurality of electrode pads and a surface of the passivation layer is greater than or equal to a vertical distance between a highest point of the plurality of busbars and the surface of the passivation layer.
H10F 19/20 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins une cellule photovoltaïque couverte par le groupe , p. ex. modules photovoltaïques comportant des matrices de cellules photovoltaïques dans ou sur un substrat semi-conducteur unique, les cellules comportant des jonctions planaires
H10F 19/90 - Structures pour la connexion des cellules photovoltaïques, p. ex. interconnexions ou espaceurs isolants
The solar cell includes a silicon substrate, multiple first electrodes, and multiple second electrodes. The solar cell further includes a tunneling oxide layer, multiple doped polysilicon layers, and at least one barrier layer. The at least one barrier layer is arranged between every adjacent two doped polysilicon layers in the multiple doped polysilicon layers, and the multiple first electrodes are electrically connected to different doped polysilicon layers. The solar cell provided according to the present application can reduce the total thickness of the polycrystalline silicon layer, so that a thinner polycrystalline silicon layer can reduce parasitic absorption, thereby increasing short-circuit current. Moreover, the risk of slurry burning through the tunneling oxide layer is reduced by the barrier layer, while reducing metal recombination, which increases the open circuit voltage of the solar cell, thereby improving the photoelectric conversion efficiency of the solar cell.
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H01L 31/0288 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des éléments du groupe IV de la classification périodique caractérisés par le matériau de dopage
66.
Solar cell and method for manufacturing solar cell, and photovoltaic module
A solar cell, a method for manufacturing solar cell, and a photovoltaic module. The solar cell includes: a semiconductor substrate; a tunneling layer located over a rear surface of the semiconductor substrate; a hydrogen barrier layer located over a surface of the tunneling layer; a lightly doped conductive layer located over a surface of the hydrogen barrier layer; and grid-shaped doped conductive layers located on at least part of a surface of the lightly doped conductive layer, wherein each of the grid-shaped doped conductive layers includes a heavily doped conductive layer and a metal barrier layer that are stacked on one another.
An electrode structure, a solar cell, and a photovoltaic module are provided. The electrode structure includes: busbars extending along a first direction and each including two sub-busbars arranged opposite to each other along a second direction intersecting with the first direction, each of the sub-busbars includes first sub-portions and second sub-portions that are spaced at intervals; fingers extending along the second direction and arranged at two sides of the busbars, the fingers are connected to the sub-busbars; and electrode pads sandwiched between the first sub-portions of the two sub-busbars and connected to the first sub-portions, the first sub-portion of at least one of the sub-busbars protrude towards a side away from the electrode pads.
A solar cell and a photovoltaic module is disclosed. The solar cell includes a silicon substrate, and the silicon substrate includes a front surface and a back surface arranged opposite to each other. P-type conductive regions and N-type conductive regions are alternately arranged on the back surface of the silicon substrate. Front surface field regions are located on the front surface of the silicon substrate and spaced from each other. The front surface field regions each corresponds to one of the P-type conductive regions or one of the N-type conductive regions. At least one front passivation layer is located on the front surface of the silicon substrate. At least one back passivation layer is located on surfaces of the P-type conductive regions and N-type conductive regions.
A photovoltaic module and a method for manufacturing the photovoltaic module are provided. A respective solar cell has a front surface and a rear surface opposite to the front surface, each of which has a plurality of electrodes formed thereon. Each connection member of the plurality of connection members is configured to connect two adjacent solar cells of the plurality of solar cells and has a first end portion disposed over the front surface of a first solar cell of the two adjacent solar cells and a second end portion disposed over the rear surface of a second solar cell of the two adjacent solar cells. Each encapsulation layer includes a first encapsulation sub-layer and a second encapsulation sub-layer, where flowability of the first encapsulation sub-layer is smaller than flowability of the second encapsulation sub-layer.
A photovoltaic module includes a plurality of cells, each of the plurality of cells including grid structures spaced apart in a first direction; a plurality of connection components extending along the first direction and spaced apart in a second direction, each of the plurality of connection components being electrically connected to corresponding adjacent cells; a plurality of composite films, each of the plurality of composite films covering a surface of a respective connection component and portions of a surface of a corresponding cell on opposite sides of the respective connection component; an encapsulation layer, covering surfaces of the plurality of composite films; a cover plate, disposed on a side of the encapsulation layer away from the plurality of cells. Each of the plurality of composite films includes a first layer and a second layer, and the first layer is located between the second layer and the respective connection component.
H10F 19/80 - Encapsulations ou conteneurs pour des dispositifs intégrés, ou des ensembles de plusieurs dispositifs, comportant des cellules photovoltaïques
H10F 19/90 - Structures pour la connexion des cellules photovoltaïques, p. ex. interconnexions ou espaceurs isolants
H10F 71/00 - Fabrication ou traitement des dispositifs couverts par la présente sous-classe
H10F 77/63 - Dispositions pour le refroidissement directement associées ou intégrées aux cellules photovoltaïques, p. ex. puits thermiques directement associés aux cellules photovoltaïques ou éléments Peltier intégrés pour le refroidissement actif
71.
SOLAR CELL SCREEN PLATE, SOLAR CELL, AND PHOTOVOLTAIC MODULE
A solar cell screen plate, a solar cell, and a photovoltaic module are provided. The solar cell screen plate includes a plurality of parallel finger electrodes arranged on a surface of the substrate, where each respective finger electrode of the plurality of finger electrodes includes a plurality of first grid lines separated by a plurality of gaps such that each pair of adjacent first grid lines in the respective finger electrode are separated by a corresponding gap of the plurality of gaps; and a plurality of enhancement grid lines, where each respective enhancement grid line is located at a gap between two adjacent first grid lines in a finger electrode and has two opposing ends respectively in electrical contact with the two adjacent first grid lines. The respective enhancement grid line includes printing paste different from printing paste of the respective finger electrode.
A solar cell and a photovoltaic module. The solar cell includes: a substrate including a front surface and a back surface, a tunneling layer formed on the back surface of the substrate, a doped conductive layer formed on the tunneling layer, an intrinsic polycrystalline silicon layer formed on the doped conductive layer, a first passivation layer formed on the intrinsic polycrystalline silicon layer, and a first electrode formed on the first passivation layer. The first electrode is in contact with the intrinsic polycrystalline silicon layer by running through the first passivation layer and is spaced apart from the tunneling layer. The photovoltaic module includes the solar cell.
H01L 31/077 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] caractérisés par au moins une barrière de potentiel ou une barrière de surface les barrières de potentiel étant uniquement du type PIN, p.ex. cellules solaires PIN en silicium amorphe les dispositifs comprenant des matériaux monocristallins ou polycristallins
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H01L 31/028 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des éléments du groupe IV de la classification périodique
A solar cell and a photovoltaic module are provided. The solar cell includes a substrate having first edges and second edges; two first main electrodes, where each first main electrode is close to a corresponding first edge and includes a plurality of first sub-connection pads and a first connection wire; and at least two second main electrodes, where the at least two second main electrodes are disposed between the two first main electrodes, where each of the at least two second main electrodes includes a plurality of second sub-connection pads and a second connection wire, where a first pitch between a respective first main electrode and a second main electrode adjacent to the respective first main electrode is not equal to a second pitch between adjacent second main electrodes.
H01L 31/0465 - Modules PV composés d'une pluralité de cellules solaires en couches minces déposées sur un même substrat comportant des structures particulières pour la connexion électrique de cellules PV adjacentes dans un module
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
74.
SOLAR CELL STENCIL, SOLAR CELL, AND PHOTOVOLTAIC MODULE
Disclosed are a solar cell stencil, a solar cell, and a photovoltaic module. The solar cell stencil comprises: a plurality of secondary grid lines arranged in parallel, each secondary grid line comprising a plurality of disconnection portions; and a plurality of reinforcing grids, each reinforcing grid being located at each disconnection portion, the reinforcing grids being parallel to the secondary grid lines, two ends of each reinforcing grid being respectively in electrical contact with the areas of the secondary grid lines except the disconnection portions, and the reinforcing grids being used for being in electrical contact with welding strips, wherein printing paste of the reinforcing grids is different from that of the secondary grid lines.
A method for preparing a solar cell includes: providing a carrier plate and a separation auxiliary layer, forming a perovskite absorption layer, having a first side facing away from the separation auxiliary layer and a second side opposite to the first side and including a bonding matrix and monocrystal perovskite particles, over the separation auxiliary layer away from the carrier plate, at least some of the monocrystal perovskite particles having first convex surfaces and second convex surfaces protruding from the bonding matrix on the first and second side respectively, and a functional layer formed over a respective monocrystal perovskite particle; forming a first carrier transport layer on the first side of the perovskite absorption layer; forming a first conductive layer over the first carrier transport layer; removing the carrier plate and the separation auxiliary layer, and forming a second conductive layer on the second side of the perovskite absorption layer.
H10K 30/35 - Dispositifs organiques sensibles au rayonnement infrarouge, à la lumière, au rayonnement électromagnétique de plus courte longueur d'onde ou au rayonnement corpusculaire comprenant des hétérojonctions de masse, p. ex. des réseaux interpénétrés de domaines de matériaux donneurs et accepteurs comprenant des nanostructures inorganiques, p. ex. des nanoparticules de CdSe
H10F 10/19 - Cellules photovoltaïques ayant plusieurs barrières de potentiel de type différent, p. ex. cellules dites "tandem" comprenant à la fois des jonctions PN et des jonctions PIN
H10F 19/40 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins une cellule photovoltaïque couverte par le groupe , p. ex. modules photovoltaïques comportant des cellules photovoltaïques empilées mécaniquement
H10K 30/40 - Dispositifs organiques sensibles au rayonnement infrarouge, à la lumière, au rayonnement électromagnétique de plus courte longueur d'onde ou au rayonnement corpusculaire comprenant une structure p-i-n, ayant p. ex. un absorbeur pérovskite entre des couches de transport de charge de type p et de type n
Disclosed are a solar cell and a tandem solar cell, and the solar cell includes a first conductive layer, a first carrier transport layer, a perovskite absorption layer, and a second conductive layer stacked along a first direction. The solar cell further includes a perovskite absorption layer including a bonding matrix and multiple monocrystal perovskite particles arranged in the bonding matrix, where the bonding matrix includes a first side and a second side opposite to the first side. At least some of the multiple monocrystal perovskite particles has first convex surfaces and second convex surfaces, the first convex surfaces protrude out of the first side and the second convex surfaces protrude out of the second side. The solar cell is at least beneficial for improving the stability and photoelectric conversion ability of the perovskite solar cell.
H01L 31/077 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] caractérisés par au moins une barrière de potentiel ou une barrière de surface les barrières de potentiel étant uniquement du type PIN, p.ex. cellules solaires PIN en silicium amorphe les dispositifs comprenant des matériaux monocristallins ou polycristallins
H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
Provided is a photovoltaic module, including a first intermediate busbar having a first lead-out terminal provided at an end thereof; a second intermediate busbar having a second lead-out terminal provided at an end thereof; and a first jumper wire arranged on a first isolation bar; the first lead-out terminal and the second lead-out terminal are located on two opposite sides of the first jumper wire, and the first lead-out terminal and the second lead-out terminal abut against two opposite side surfaces of the first isolation bar or overlap a top surface of the first isolation bar. Compared with the related art, the first isolation bar where the first jumper wire is located is clamped or pressed by the first lead-out terminal and the second lead-out terminal, to prevent short circuit or shielding of the cell caused by free movement of the first jumper wire, the first and second intermediate busbars.
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H01L 31/05 - Moyens d’interconnexion électrique entre les cellules PV à l’intérieur du module PV, p.ex. connexion en série de cellules PV
H02S 40/34 - Composants électriques comprenant une connexion électrique structurellement associée au module PV, p. ex. boîtes de jonction
The solar cell includes: a substrate, a tunneling dielectric layer disposed over the substrate and a doped conductive layer formed over the tunneling dielectric layer. The doped conductive layer includes main body portions and first connecting portions. Each of the main body portions extends in a first direction, and the main body portions are arranged at intervals along a second direction perpendicular to the first direction. At least one first connecting portion in the first connecting portions is located between every two adjacent main body portions and in contact with each of the two adjacent main body portions. The solar cell further includes first electrodes each extending in the first direction. The first electrodes respectively correspond to the main body portions and are arranged at intervals along the second direction, and each first electrode is disposed on and electrically connected to a corresponding one of the main body portions.
Provided are a solar cell and a photovoltaic module. The solar cell includes a body and a first electrode. The body has a first region and a second region, and at least part of the first region covers the first electrode. The body includes a substrate, a first tunneling layer, a first doped conductive layer, and a second doped conductive layer. The first tunneling layer has a greater thickness in the first region than in the second region. The first tunneling layer is arranged between the first doped conductive layer and the second doped conductive layer. The first electrode is electrically connected to the first doped conductive layer. The second doped conductive layer is located on a side of the substrate close to the first tunneling layer. The second doped conductive layer has a less thickness in the first region than in the second region.
H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
H01L 31/075 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] caractérisés par au moins une barrière de potentiel ou une barrière de surface les barrières de potentiel étant uniquement du type PIN, p.ex. cellules solaires PIN en silicium amorphe
80.
SOLAR CELL PREPARATION METHOD, SOLAR CELL AND LAMINATED SOLAR CELL
The embodiments of the present application relate to a solar cell preparation method, a solar cell and a laminated solar cell. The solar cell preparation method comprises: providing a carrier and a separation auxiliary layer, which are sequentially stacked; on the surface of the separation auxiliary layer away from the carrier, forming a perovskite absorption layer comprising a bonding substrate and a plurality of single crystal perovskite particles arranged in the bonding substrate, wherein the bonding substrate has a first surface and a second surface opposite each other, the first surface is away from the separation auxiliary layer, at least some of the single crystal perovskite particles each have a first protruding face protruding relative to the first surface and a second protruding face protruding relative to the second surface, and functional layers are formed on surfaces of the single crystal perovskite particles; forming a first carrier transport layer on the perovskite absorption layer; forming a first conductive layer on the first carrier transport layer; and removing the carrier and the separation auxiliary layer, and forming a second conductive layer on the perovskite absorption layer. The embodiments of the present application are conducive to an improvement in the photoelectric conversion capability and stability of a perovskite solar cell.
H10K 71/00 - Fabrication ou traitement spécialement adaptés aux dispositifs organiques couverts par la présente sous-classe
H10K 30/40 - Dispositifs organiques sensibles au rayonnement infrarouge, à la lumière, au rayonnement électromagnétique de plus courte longueur d'onde ou au rayonnement corpusculaire comprenant une structure p-i-n, ayant p. ex. un absorbeur pérovskite entre des couches de transport de charge de type p et de type n
MONODISPERSE GRANULAR FILM, METHOD FOR FORMING THE MONODISPERSE GRANULAR FILM, SOLAR CELL, METHOD FOR PREPARING THE SOLAR CELL, AND PHOTOVOLTAIC MODULE
The embodiments of the present application relate to the technical field of electronic materials, in particular to a monodisperse granular film, a method for forming the monodisperse granular film, and a photovoltaic cell. The method for forming the monodisperse granular film includes: providing an initial substrate having a first surface and a second surface opposite to the first surface, forming a sacrificial layer, an adhesive layer and a monodisperse granular layer on the first surface, where the monodisperse granular layer includes multiple granules arranged dispersedly on the first surface, the sacrificial layer is located between the multiple granules and the initial substrate, the adhesive layer is located between adjacent granules of the multiple granules, and the adhesive layer is exposed out of a part of a surface of each of the multiple granules away from the initial substrate, dissolving and removing the initial substrate, and dissolving and removing the sacrificial layer. The method for preparing the solar cell includes providing a substrate, where the substrate is a molten salt substrate, and a melting point of the molten salt substrate is defined as a first temperature. The method further includes forming a thin film solar cell on a surface of the substrate, where the thin film solar cell includes an absorption layer formed at a second temperature, and the first temperature is greater than the second temperature. The method further includes providing a bottom cell, and attaching the bottom cell to a surface of the thin film solar cell away from the substrate. The method further includes removing the substrate to expose the surface of the thin film solar cell away from the substrate. The method further includes forming a transparent electrode layer on the surface of the thin film solar cell away from the bottom cell and forming grid lines on a surface of the transparent electrode layer away from the thin film solar cell. The embodiments of the present application are at least conducive to reducing the difficulty in forming the monodisperse granular film, extending application scenarios of the stacked solar cell, reducing the damage on the solar cell caused in preparing the stacked solar cell, and improving the photoelectric conversion efficiency of the stacked solar cell.
H01L 31/0256 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par les matériaux
H01L 31/042 - Modules PV ou matrices de cellules PV individuelles
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
H01L 31/0687 - Cellules solaires à jonctions multiples ou dites "tandem"
A solar cell is disclosed, including a substrate having a first surface and an opposite second surface, and a first passivation contact structure. The first surface has a metal pattern region and a non-metal pattern region including a first region and a second region. The first region is closer to the second surface than the metal pattern region, and the second region is not closer to the second surface than the first region and is not further away from the second surface than the metal pattern region. The substrate has a doped layer formed in a portion of the substrate corresponding to the non-metal pattern region, and the doped layer has a top surface at the non-metal pattern region. The first passivation contact structure covers the metal pattern region and includes at least one first tunneling layer and at least one first doped conductive layer.
H01L 31/0735 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] caractérisés par au moins une barrière de potentiel ou une barrière de surface les barrières de potentiel étant uniquement du type PN à hétérojonction comprenant uniquement des composés semiconducteurs AIIIBV, p.ex. cellules solaires en GaAs/AlGaAs ou InP/GaInAs
The photovoltaic cell includes a silicon substrate, a first passivation layer, a second passivation layer, at least one silicon oxynitride layer, and at least one silicon nitride layer. The second passivation layer includes a first silicon oxide layer and at least one aluminum oxide layer, and a thickness of the at least one aluminum oxide layer is in a range of 4 nm to 20 nm. The number of silicon atoms is greater than the number of oxygen atoms in the at least one silicon oxynitride layer and the number of oxygen atoms is greater than the number of nitride atoms in the at least one silicon oxynitride layer. The first silicon oxide layer is disposed between the substrate and the at least one aluminum oxide layer, and a thickness of the first silicon oxide layer is in a range of 0.1 nm to 5 nm.
Embodiments of the present disclosure provide a method for producing a photovoltaic module and a photovoltaic module. The method includes: providing a plurality of solar cells, each respective solar cell has an overlapping area; applying adhesive to first areas in the overlapping area of each solar cell, the first areas allow the respective solar cell to be welded to a neighboring solar cell through a plurality of welding strips; in response to hardness of the adhesive falling in a preset hardness range by curing, welding the respective solar cell to the neighboring solar cell through the plurality of welding strips, to obtain at least one cell string; and laminating a front encapsulation layer, a front encapsulation material, the at least one cell string, a rear encapsulation material and a rear encapsulation layer, to obtain the photovoltaic module.
The embodiments of the present application relate to a solar cell and a laminated solar cell. The solar cell comprises: a first electrically conductive layer, a first carrier transport layer, a perovskite absorption layer and a second electrically conductive layer, which are sequentially stacked in a first direction, wherein the perovskite absorption layer comprises a bonding substrate, and a plurality of single crystal perovskite particles, which are arranged in the bonding substrate; in the first direction, the bonding substrate comprises a first surface and a second surface, which are opposite each other; at least some of the single crystal perovskite particles have first protruding faces and second protruding faces; the first protruding faces protrude relative to the first surface; and the second protruding faces protrude relative to the second surface. The embodiments of the present application are at least conducive to an improvement in the stability and photoelectric conversion capability of a perovskite solar cell.
H01L 31/032 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés non couverts par les groupes
H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
The photovoltaic module includes: a solar cell sheet, where a surface of the solar cell sheet is provided with multiple grid line structures spaced along a first direction; multiple connecting portions spaced along a second direction, where each of the multiple connecting portions is arranged on the surface of the solar cell sheet and is in electrical contact with at least one of the multiple grid line structures; each of the multiple connecting portions includes a body portion, a first portion and a second portion, the first portion is located on the surface of the solar cell sheet and is alloyed with the at least one of the multiple grid line structures, and an outer profile of the second portion away from the body portion has the same shape with an inner profile of the second portion.
A solar cell and a photovoltaic module. The solar cell includes substrate, tunnel oxide layer, doped conductive layer, intrinsic polycrystalline silicon layer, enhanced conductive portion, and first electrodes. The tunnel oxide layer covers the first surface of the substrate. The doped conductive layer covers one side of the tunnel oxide layer away from the substrate. The intrinsic polycrystalline silicon layer is formed on one side of the doped conductive layer away from the tunnel oxide layer. The enhanced conductive portion covers one side of the intrinsic polycrystalline silicon layer away from the doped conductive layer, and is at least partially connected to the doped conductive layer. First electrodes are formed on one side of the enhanced conductive portion away from the intrinsic polycrystalline silicon layer, and at least part of each first electrode is located in the enhanced conductive portion to be electrically connected to the doped conductive layer.
H10F 77/00 - Détails de structure des dispositifs couverts par la présente sous-classe
H10F 10/174 - Cellules photovoltaïques ayant uniquement des barrières de potentiel du type jonction PIN comprenant des matériaux monocristallins ou polycristallins
H10F 19/80 - Encapsulations ou conteneurs pour des dispositifs intégrés, ou des ensembles de plusieurs dispositifs, comportant des cellules photovoltaïques
H10F 19/90 - Structures pour la connexion des cellules photovoltaïques, p. ex. interconnexions ou espaceurs isolants
H10F 77/122 - Matériaux actifs comportant uniquement des matériaux du groupe IV
Disclosed are a solar cell and a photovoltaic module. The solar cell includes a substrate, having a first surface, having a metal pattern region and a non-metal pattern region, a first passivation contact structure, located in the metal pattern region and including a first tunneling layer and a first doped conductive layer stacked in a direction away from the substrate, and a second passivation contact structure, including a second tunneling layer and a second doped conductive layer stacked in the direction away from the substrate, and having a first portion over the non-metal pattern region and a second portion over the first passivation contact structure, and a top surface of the first portion of the second passivation contact structure is not further away from the substrate than a top surface of the second portion of the second passivation contact structure.
MONODISPERSE GRANULAR FILM, METHOD FOR FORMING THE MONODISPERSE GRANULAR FILM, SOLAR CELL, METHOD FOR PREPARING THE SOLAR CELL, AND PHOTOVOLTAIC MODULE
The method for forming the monodisperse granular film includes: providing an initial substrate having a first surface and a second surface opposite to the first surface, forming a sacrificial layer, an adhesive layer and a monodisperse granular layer over the first surface, where the monodisperse granular layer includes multiple granules arranged dispersedly over the first surface, the sacrificial layer is between the multiple granules and the initial substrate, the adhesive layer is between adjacent granules of the multiple granules, and the adhesive layer is exposed between adjacent granules on a side of the multiple granules away from the initial substrate, dissolving and removing the initial substrate, and dissolving and removing the sacrificial layer. The embodiments of the present application are at least conducive to reducing the difficulty in forming the monodisperse granular film, and extending application scenarios of the stacked solar cell.
G03F 7/36 - Dépouillement selon l'image non couvert par les groupes , p. ex. utilisant un courant gazeux, un plasma
G03F 7/38 - Traitement avant le dépouillement selon l'image, p. ex. préchauffage
H01L 31/072 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] caractérisés par au moins une barrière de potentiel ou une barrière de surface les barrières de potentiel étant uniquement du type PN à hétérojonction
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
Disclosed are a solar cell and a photovoltaic module. The solar cell includes a substrate, having a first surface and a second surface opposite to the first surface. The first surface includes a metal pattern region and a non-metal pattern region. The first surface is uneven and has a first maximum height with respect to the second surface in the non-metal pattern region and a second maximum height with respect to the second surface in the metal pattern region, and the first maximum height is lower than the second maximum height. The solar cell includes at least one passivation contact structure, covering the first surface and including a tunneling layer and a doped conductive layer stacked in a direction away from the substrate.
SHANGHAI JINKO GREEN ENERGY ENTERPRISE MANAGEMENT CO., LTD. (Chine)
ZHEJIANG JINKO SOLAR CO., LTD. (Chine)
Inventeur(s)
Qi, Peidong
Li, Tingting
Tao, Wusong
Li, Hui
Yang, Chenzhao
Abrégé
A solar cell and a solar cell module can include a converging busbar. The converging busbar separates a first surface of the solar cell into a first region and a second region. The first region includes a plurality of first sub-busbars spaced along a first direction and a plurality of main busbars spaced along a second direction, and the main busbar is electrically connected to the first sub-busbar. The second region includes a plurality of second sub-busbars spaced along a third direction. The converging busbar is located between the first region and the second region, and is electrically connected to the plurality of main busbars and the plurality of second sub-busbars.
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
92.
TRACING METHOD AND TRANSPORT DEVICE FOR SOLAR CELLS
The tracing method according to the present disclosure includes: coding solar cells disposed in a loading frame according to a frame code of a loading frame, such that each respective solar cell has a respective cell code; obtaining respective process information of the respective solar cell according to a loading order, where the process information includes a code of a process carrier, a code of a workbench and a position code of a solar cell in the process carrier; uploading cell codes and process information of the solar cells to a computer system; and recording and associating, by the computer system, the respective cell code and the respective process information.
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
A solar cell and a photovoltaic module. The solar cell includes: a substrate including a first surface; a tunneling oxide layer covering the first surface; a doped conductive layer covering a surface of the tunneling oxide layer away from the substrate; an intrinsic polycrystalline silicon layer formed on one side of the doped conductive layer away from the tunneling oxide layer; and a plurality of first electrodes arranged on one side of the intrinsic polycrystalline silicon layer away from the doped conductive layer and electrically connected to the doped conductive layer. At least a portion of the first electrode is located in the intrinsic polycrystalline silicon layer, and a gap is defined between a top end of the first electrode and the substrate.
H01L 31/077 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] caractérisés par au moins une barrière de potentiel ou une barrière de surface les barrières de potentiel étant uniquement du type PIN, p.ex. cellules solaires PIN en silicium amorphe les dispositifs comprenant des matériaux monocristallins ou polycristallins
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H01L 31/028 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des éléments du groupe IV de la classification périodique
The method for preparing a solar cell includes providing a substrate having a first surface and a second surface opposite to the first surface; forming a doped layer and a first passivation layer stacked sequentially in a direction away from the substrate on the first surface; forming a second passivation layer on the second surface; forming multiple first grid line electrodes arranged at intervals on the surface of the first passivation layer away from the substrate, and forming multiple second grid line electrodes arranged at intervals on the surface of the second passivation layer away from the substrate; performing a laser processing on the multiple first grid line electrodes and an adjacent region of the multiple first grid line electrodes, and applying a reverse current between the multiple first grid line electrodes and the multiple second grid line electrodes.
Jinko Green Energy (Shanghai) Management Co., LTD. (Chine)
Zhejiang Jinko Solar Co., Ltd. (Chine)
Inventeur(s)
Tao, Wusong
Xu, Tao
Wang, Luchuang
Guo, Zhiqiu
Jin, Hao
Abrégé
The present disclosure provides a functional part, a photovoltaic module and a manufacturing method of photovoltaic modules. The functional part is configured to form a photovoltaic module with a cell string that includes a plurality of cells. Adjacent cells of the cell string share an overlapped region. The functional part has a first surface facing the cell string and a second surface opposite to the first surface. The functional part includes at least one groove extending from the first surface towards the second surface. A location of each groove corresponds to a location of at least one overlapped region.
A photovoltaic module and a method for manufacturing the same are provided. The photovoltaic module includes a plurality of cell strings; a first encapsulating adhesive film and a second encapsulating adhesive film, where the photovoltaic module has a central region and a peripheral region, where the first encapsulating adhesive film defines at least one first hole and the second encapsulating adhesive film defines at least one second hole, and each first hole directly faces a corresponding second hole; and at least one filling structure, where the at least one filling structure includes a material having a crosslinking curing speed that is faster than a crosslinking curing speed of a material in the first encapsulating adhesive film and is faster than a crosslinking curing speed of a material in the second encapsulating adhesive film.
The solar cell according to the present disclosure includes a substrate and a plurality of grid lines. A plurality of recess sets arranged at intervals in a first direction are formed on a surface of the substrate, and each of the plurality of grid lines is formed in a region defined by a respective recess set. Each of the plurality of recess sets includes a plurality of recesses arranged at intervals in the second direction, and 0
SHANGHAI JINKO GREEN ENERGY ENTERPRISE MANAGEMENT CO., LTD. (Chine)
ZHEJIANG JINKO SOLAR CO., LTD. (Chine)
Inventeur(s)
Guo, Zhiqiu
Hu, Yidong
Yao, Yichao
Abrégé
A photovoltaic module, including a laminate including a solder strip; and a junction box arranged on a surface of the laminate and including a plate connected to the solder strip by laser soldering. The plate has a first region and a second region, in which a region covered by the solder strip on the plate is the first region, and a region not covered by the solder strip on the plate is the second region. A soldering seam formed by laser soldering includes a first soldering seam and a second soldering seam. The first soldering seam is located in the first region, and the first soldering seam extends through the solder strip into the plate along a thickness direction of the laminate. The second soldering seam is located in the second region, and the second soldering seam extends directly into the plate along the thickness direction of the laminate.
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H01L 31/042 - Modules PV ou matrices de cellules PV individuelles
99.
Photovoltaic frame, photovoltaic module and method for manufacturing photovoltaic frame
Disclosed are a photovoltaic frame and a photovoltaic module. The photovoltaic frame includes a top support portion, a bottom support portion, a transverse edge portion, a first side edge portion and a second side edge portion. The top support portion, the transverse edge portion and the second side edge portion enclose a holding slot, and the top support portion has a bearing surface facing the holding slot. The photovoltaic frame alternatively includes a third side edge portion configured to connect the top support portion and the bottom support portion. The photovoltaic frame further includes a weather-resistant protective layer, covering a part of outer surfaces, that are in contact with external environment, among the top support portion, the bottom support portion, the first side edge portion, the second side edge portion, the transverse edge portion, and the third side edge portion if included.
An energy storage battery cabinet including a housing is provided. The housing includes a main body, a first side door, and a second side door. The main body includes a panel, a back plate, a top plate, and a bottom plate. The top plate and the bottom plate are arranged opposite to each other and integrally formed with the panel and/or the back plate. The first side door and the second side door are respectively arranged on both sides of the main body and are detachably connected with the main body. A first inner side plate and a second inner side plate are further arranged on an inner side of the first side door and the second side door respectively.
H01M 50/204 - Bâtis, modules ou blocs de multiples batteries ou de multiples cellules
H01M 50/296 - MonturesBoîtiers secondaires ou cadresBâtis, modules ou blocsDispositifs de suspensionAmortisseursDispositifs de transport ou de manutentionSupports caractérisés par les bornes des blocs de batterie
H01M 50/298 - MonturesBoîtiers secondaires ou cadresBâtis, modules ou blocsDispositifs de suspensionAmortisseursDispositifs de transport ou de manutentionSupports caractérisés par le câblage des blocs de batterie
brevets
