The method for modifying a fluororesin includes two steps. In a first step, a first gas containing an organic compound including an oxygen atom is irradiated with ultraviolet light exhibiting intensity in at least a wavelength region of 205 nm or less, and the first gas that has been irradiated with the ultraviolet light is brought into contact with a fluororesin. In a second step, a second gas containing oxygen molecules is irradiated with the ultraviolet light, and the second gas that has been irradiated with the ultraviolet light is brought into contact with the fluororesin. The modification device includes: at least one gas supply port for supplying a first gas containing an organic compound including an oxygen atom and a second gas containing oxygen molecules; and a light source that emits ultraviolet light exhibiting intensity in a wavelength region of 205 nm or less.
B01J 19/12 - Procédés utilisant l'application directe de l'énergie ondulatoire ou électrique, ou un rayonnement particulaireAppareils à cet usage utilisant des radiations électromagnétiques
Provided is a reflection-type phase difference structure having uniform properties over a wide band. A reflection-type phase difference structure 200 has a layered structure of a metal reflection layer 210 and an anisotropic structure layer 230. The anisotropic structure layer 230 comprises multiple metal structure elements 232 formed from an aluminum-based metal and a dielectric filling member 234 for filling the space between the multiple metal structure elements 232.
The present invention provides a resin glass having a surface with excellent abrasion resistance. The present invention also provides a method and apparatus for producing the resin glass. The resin glass comprises: a substrate that transmits visible light; and a hard coat layer which is formed on an upper layer of the substrate and contains a silicone polymer. The hard coat layer has, on a surface thereof, a modified region having a higher proportion of inorganic glass components than a surface on the substrate side. The proportion of inorganic glass components in the modified region is 40-50%.
C08J 7/046 - Formation de revêtements résistants à l'abrasionFormation de revêtements de durcissement de surface
B05D 3/06 - Traitement préalable des surfaces sur lesquelles des liquides ou d'autres matériaux fluides doivent être appliquésTraitement ultérieur des revêtements appliqués, p. ex. traitement intermédiaire d'un revêtement déjà appliqué, pour préparer les applications ultérieures de liquides ou d'autres matériaux fluides par exposition à des rayonnements
B05D 5/00 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces pour obtenir des effets, finis ou des structures de surface particuliers
B05D 7/04 - Procédés, autres que le flocage, spécialement adaptés pour appliquer des liquides ou d'autres matériaux fluides, à des surfaces particulières, ou pour appliquer des liquides ou d'autres matériaux fluides particuliers à des substances macromoléculaires, p. ex. à du caoutchouc à la surface de films ou de feuilles
B05D 7/24 - Procédés, autres que le flocage, spécialement adaptés pour appliquer des liquides ou d'autres matériaux fluides, à des surfaces particulières, ou pour appliquer des liquides ou d'autres matériaux fluides particuliers pour appliquer des liquides ou d'autres matériaux fluides particuliers
B32B 27/00 - Produits stratifiés composés essentiellement de résine synthétique
B32B 27/16 - Produits stratifiés composés essentiellement de résine synthétique spécialement traitée, p. ex. irradiée
C08J 7/00 - Traitement chimique ou revêtement d'objets façonnés faits de substances macromoléculaires
Provided are an improved method and device for modifying a fluororesin. The method for modifying a fluororesin includes: a first step in which a first fluid containing an organic compound including at least one of an oxygen atom and a nitrogen atom is irradiated with ultraviolet light exhibiting intensity in at least a wavelength region of 205 nm or less, and the first fluid that has been irradiated with the ultraviolet light is brought into contact with a fluororesin; and a second step in which a second fluid containing water in the form of gas or mist is irradiated with the ultraviolet light, and the second fluid that has been irradiated with the ultraviolet light is brought into contact with the fluororesin.
B01J 19/12 - Procédés utilisant l'application directe de l'énergie ondulatoire ou électrique, ou un rayonnement particulaireAppareils à cet usage utilisant des radiations électromagnétiques
Provided are an ultraviolet treatment device and an ultraviolet treatment method that are capable of efficiently forming a hydroxy group through ultraviolet irradiation. An ultraviolet treatment device according to one embodiment of the present invention comprises an ultraviolet light source, a treatment chamber, a gas supply unit, a temperature difference generation mechanism, and a stage. Ultraviolet light from the ultraviolet light source enters the treatment chamber. The gas supply unit supplies, to the treatment chamber, a steam-gas mixture containing steam and a gas to be mixed. The temperature difference generation mechanism generates a temperature difference in the steam-gas mixture in the treatment chamber. In the treatment chamber, the stage holds a workpiece in an area which is irradiated with the ultraviolet light and in which the concentration of the steam becomes relatively high through convection in the steam-gas mixture due to the temperature difference.
C08J 7/00 - Traitement chimique ou revêtement d'objets façonnés faits de substances macromoléculaires
B01J 19/12 - Procédés utilisant l'application directe de l'énergie ondulatoire ou électrique, ou un rayonnement particulaireAppareils à cet usage utilisant des radiations électromagnétiques
Provided is a semiconductor laser device having an internal monitor-photodiode design and having improved long-term output stability. A laser diode (LD) chip 110 is an end-face emission type and emits forward laser output L1 from a forward end face S1. A glass window 150 is provided on the forward end-face S1 side of the LD chip 110 and reflects a portion of the forward laser output L1. A light-receiving element 170 is provided on the rearward end-face S2 side of the LD chip 110 so that the light-receiving element can receive reflected forward laser output L4, which is forward laser output L3 that is reflected by the glass window 150. Power Pr' of rearward laser output L6, emitted from the rearward end face S2 of the LD chip 110 and incident on the light-receiving element 170, is 1/3 or less of power Pf" of the reflected forward laser output L4 incident on the light-receiving element 170.
H01S 5/0239 - Combinaisons d’éléments électriques ou optiques
H01S 5/02212 - SupportsBoîtiers caractérisés par la forme des boîtiers du type CAN, p. ex. boîtiers TO-CAN avec émission le long ou parallèlement à l’axe de symétrie
Provided are: a plasma generation mechanism for which the cost of supplying a plasma raw material is low, and which is highly durable; and a light source device. A plasma generation mechanism according to one embodiment of the present invention is provided with a rotor, a rotary drive source, a storage chamber, a heating unit, and a raw material supply unit. The rotor rotates around a rotating shaft. The rotary drive source causes the rotor to turn around the rotating shaft. The storage chamber stores a liquid plasma raw material, and a part of the rotor is immersed in the stored liquid plasma raw material. The heating unit heats the liquid plasma raw material stored in the storage chamber. The raw material supply unit comprises: a raw material introduction path through which a solid plasma raw material that is the plasma raw material in a solid state passes; and a raw material supply port which is provided to the raw material introduction path, and through which the solid plasma raw material cannot pass but a liquid plasma raw material, resulting from the melting of the solid plasma raw material, can pass. The liquid plasma raw material that has passed through the raw material supply port flows into the storage chamber.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
Provided is a plasma processing device capable of efficiently performing plasma processing with respect to an object being processed. This plasma processing device for blowing a plasma-containing gas onto an object being processed is characterized by comprising a nozzle having an injection port for injecting the plasma-containing gas, and a buffer chamber having a bottom surface that faces the object being processed, and a side surface that surrounds the plasma-containing gas injected from the injection port and that connects the bottom surface and the nozzle, wherein: the bottom surface has a bottom plate portion and an opening portion for ejecting the plasma-containing gas injected from the injection port; and when viewed in a direction perpendicular to the bottom surface, the opening portion is larger than the injection port in a width direction of the injection port.
Provided is a method for forming a laser via hole in an insulating layer of a build-up substrate, while avoiding damage to a wiring pattern layer. The method includes a step (a) for irradiating a laminated body, including a first insulating layer having an upper surface on which a wiring pattern is formed and a second insulating layer disposed in a layer above the first insulating layer, with a pulse laser from a light source unit, onto the second insulating layer from above a region in which the wiring pattern is formed, to form a through-hole in the second insulating layer such that the wiring pattern is exposed. The pulse laser exhibits a waveform obtained by repeating, with a period of 1 kHz to 10 MHz, pulse groups in which pulses having a pulse width of 1 ns or less are arranged with a pulse period of 10 ns or less, at or after the timing at which exposure of at least a portion of the wiring patterns begins.
B23K 26/382 - Enlèvement de matière par perçage ou découpage par perçage
B23K 26/0622 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples par commande directe du faisceau laser par impulsions de mise en forme
The present invention provides a multi-beam semiconductor laser element that does not require a laminated wiring structure straddling a laser resonator. A plurality of laser waveguides 200 are integrated on a semiconductor substrate 110 adjacent to each other in a first direction (x direction). Each laser waveguide 200 has a stripe-shaped power-feed electrode 150 that extends lengthwise in a second direction (y direction) perpendicular to the first direction. An interlayer insulation layer 160 is formed on the power-feed electrodes 150 of the plurality of laser waveguides 200. A plurality of pad electrodes PE are positioned on the interlayer insulation layer 160 along the second direction. Each of the pad electrodes PE has, connected thereto, a corresponding electric connection means 320 when mounting is performed. The plurality of pad electrodes PE correspond to the plurality of laser waveguides 200, and, at least partially, each of the pad electrodes PE overlaps with, and is electrically connected to, the power feed electrode 150 of the corresponding laser waveguide 200.
H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
H01S 5/02212 - SupportsBoîtiers caractérisés par la forme des boîtiers du type CAN, p. ex. boîtiers TO-CAN avec émission le long ou parallèlement à l’axe de symétrie
H01S 5/02335 - Montage à orientation directe, p. ex. montage à côté épitaxial au-dessus ou montage à jonction au-dessus
Provided are an ultraviolet irradiation device, an ultraviolet irradiation method, and a wiring board manufacturing method that make it possible to acheive an electric connection having excellent reliability by desmearing by a dry process. The ultraviolet irradiation device according to one embodiment of the present invention is provided with a processing chamber, an ultraviolet light source, and a gas supply unit. The ultraviolet light source causes ultraviolet rays to enter the processing chamber. The gas supply unit can switch between a first state in which oxidizing gas is supplied to the processing chamber and a second state in which reducing gas is supplied to the processing chamber.
B01J 19/12 - Procédés utilisant l'application directe de l'énergie ondulatoire ou électrique, ou un rayonnement particulaireAppareils à cet usage utilisant des radiations électromagnétiques
The purpose of the present invention is to provide a light irradiation device with which it is possible to cause ultraviolet light to be incident on an eyeball along the visual axis. A light irradiation device 1 includes: ultraviolet light sources 2 that emit light including ultraviolet light; and light guide members 3 made of a material that allows the ultraviolet light emitted from the ultraviolet light sources 2 to propagate therein and that can transmit visible light. The light guide members 3 are disposed so as to be close to the eyeballs, at positions where at least portions thereof cover the front of the eyeballs, and allow the ultraviolet light propagated therein to be emitted from in front front of the eyeballs and enter the eyeballs.
Provided are a methane gas conversion method and a methane gas conversion device for efficiently converting methane gas into organic matter. In the methane gas conversion method, a mixed fluid, in which an ozone-containing fluid is mixed with a methane gas-containing fluid, is irradiated with light having a wavelength of 200 to 411 nm, inclusive, to convert the methane gas into organic matter. The methane gas conversion device comprises: a reaction vessel including a first supply port for supplying the ozone-containing fluid and a second supply port for supplying the methane gas-containing fluid; and a light source for irradiating the inside of the reaction vessel with light having a wavelength of 200 to 411 nm, inclusive.
C07C 29/48 - Préparation de composés comportant des groupes hydroxyle ou O-métal liés à un atome de carbone ne faisant pas partie d'un cycle aromatique à six chaînons par des réactions d'oxydation avec formation de groupes hydroxyle
C07C 51/34 - Préparation d'acides carboxyliques, de leurs sels, halogénures ou anhydrides par oxydation avec l'ozonePréparation d'acides carboxyliques, de leurs sels, halogénures ou anhydrides par hydrolyse d'ozonides
Provided are a lamp for heating and a light source unit with which a solvent, a coating material, or the like adhered to a workpiece can be efficiently dried, and with which uneven drying is inhibited. The lamp for heating comprises: a main tubular body which extends in a first direction; a main light-emitting body which is accommodated in the main tubular body and which emits first light that has a peak wavelength belonging to the near-infrared region; a first coating layer which reflects a portion of the first light and transmits another portion thereof and which is provided to at least some of a first portion, from among the first portion and a second portion of a tube wall of the main tubular body, the first and second portions facing each other across the tube axis of the main tubular body along a radial direction of the main tubular body; and a second coating layer which is provided to at least some of the second portion and which, upon irradiation with the first light, emits second light that has a peak wavelength belonging to a wavelength range on the longer-wavelength side of the peak wavelength of the first light.
H05B 3/44 - Éléments chauffants ayant la forme de tiges ou de tubes non flexibles le conducteur chauffant disposé à l'intérieur des tiges ou tubes en matériau isolant
B41J 2/01 - Machines à écrire ou mécanismes d'impression sélective caractérisés par le procédé d'impression ou de marquage pour lequel ils sont conçus caractérisés par la mise en contact sélective d'un liquide ou de particules avec un matériau d'impression à jet d'encre
F26B 3/30 - Procédés de séchage d'un matériau solide ou d'objets impliquant l'utilisation de chaleur par radiation, p. ex. du soleil à l'aide d'éléments émettant des rayons infrarouges
H05B 3/10 - Éléments chauffants caractérisés par la composition ou la nature des matériaux ou par la disposition du conducteur
09 - Appareils et instruments scientifiques et électriques
10 - Appareils et instruments médicaux
Produits et services
Microfluidic chips and device (organ-on-chips);
microphysiological system being scientific apparatus;
microphysiological system being laboratory apparatus and
instruments; organ chips for laboratory use; biofunctional
chips for laboratory use; biochips; incubators for tissue
culture; incubators for cell culture; incubators for cell
and tissue culture for laboratory use; incubators for cell
and tissue culture for research use; laboratory apparatus
and instruments; optical machines and apparatus; measuring
and testing machines and instruments; chemical analysis
instruments; biochip analyzing apparatus. Incubators for cell and tissue culture for medical use; cell
culture apparatus for medical and diagnostic use; medical
apparatus and instruments used for cell culture; medical
apparatus and instruments; microfluidic medical devices;
measuring and testing machines and instruments for medial
use; medical analysis instruments; medical biochip analyzing
apparatus.
Provided is a light source device with which, despite the small size thereof, light having good color rendering properties can be obtained with high light extraction efficiency. This light source device is provided with: an excitation light source that includes a semiconductor laser element; a wavelength conversion member that converts at least some wavelengths of incident light and emits fluorescence; a condensing optical system that is disposed between the excitation light source and the wavelength conversion member and guides the excitation light to the wavelength conversion member while reducing the angle of divergence of the excitation light; and a concave reflector that is disposed, relative to the wavelength conversion member, on the side away from the excitation light source and includes a reflecting surface that exhibits reflection properties with respect to emitted light from the wavelength conversion member. The concave reflector comprises an opening section for extracting the emitted light into a region that includes a region through which the optical axis of the excitation light passes, and the wavelength conversion member, when viewed in the direction of the optical axis of the excitation light, is disposed in a region that includes the center of the concave reflector.
F21V 9/20 - Filtres dichroïques, c.-à-d. dispositifs fonctionnant selon le principe de l’interférence entre ondes lumineuses faisant passer des plages de valeurs spécifiques de longueurs d’onde tout en en annulant d’autres
F21V 9/35 - Éléments contenant un matériau photoluminescent distinct de la source de lumière ou espacé de cette source caractérisés par la disposition du matériau photoluminescent aux points focaux, p. ex. des réfracteurs, lentilles, réflecteurs ou réseaux de sources de lumière
Provided is an optical heating method by which it is possible to efficiently heat a to-be-processed body including an n-type SiC semiconductor. The method includes a step (a) in which a to-be-processed body including a n-type SiC semiconductor is irradiated with heating light, which has a color temperature in the range of 2,200K to 2,600K and is emitted from a light source unit provided with an infrared light lamp, through a window member to heat the to-be-processed body.
Provided is an optical heating method by which it is possible to efficiently heat a to-be-processed body including an n-type SiC semiconductor. The present invention includes a step (a) in which a to-be-processed body containing an n-type SiC semiconductor is irradiated with heating light, which has a peak wavelength in the range of 415nm to 500nm and is emitted from a light source unit, through a window member to heat the to-be-processed body.
H01L 21/26 - Bombardement par des radiations ondulatoires ou corpusculaires
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
H01L 21/329 - Procédés comportant plusieurs étapes pour la fabrication de dispositifs du type bipolaire, p.ex. diodes, transistors, thyristors les dispositifs comportant une ou deux électrodes, p.ex. diodes
Provided is a surface modification method capable of imparting adhesion to the surface of a base material in a more controllable manner than before without substantially providing irregularities on the surface of the base material. The surface modification method includes: a step (a) of preparing a base material containing an insulating resin material; and a step (b) of irradiating the surface of the base material with ultraviolet light having a wavelength of 200 nm or less, in an atmosphere with an oxygen concentration of 0.01 vol % to 10 vol %, to modify a treatment target region including the surface of the base material, into a microporous layer including voids of nanometer (nm) order size.
Provided are: a light source module in which heat discharge properties for heat generated in a light-emitting element are enhanced, and in which the occurrence of migration in the light-emitting element is suppressed; and a method for manufacturing the light source module. The present invention comprises a substrate, a submount disposed on a main surface of the substrate, a plurality of light-emitting elements arranged in a first direction on a mounting surface of the submount, and a gold sintered body that joins the submount and the plurality of light-emitting elements. The gold sintered body spreads to the outside of the light-emitting elements when viewed from the direction normal to the mounting surface of the submount. The height with reference to the mounting surface of the submount in a portion of the plurality of light-emitting elements that is positioned between a first light-emitting element and a second light-emitting element, which are adjacent to each other in the first direction, is lower than that of a light-emitting layer of the first light-emitting element and a light-emitting layer of the second light-emitting element.
H01L 33/64 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments d'extraction de la chaleur ou de refroidissement
H01L 21/52 - Montage des corps semi-conducteurs dans les conteneurs
H01L 25/04 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
H01S 5/024 - Dispositions pour la gestion thermique
A laser machining method and a laser machining device according to the present invention include: emitting a beam of laser light in a form of pulse separated from each other; making a plurality of beams of the laser light incident on a light collection optical system that reduces a gap between the beams of the laser light; irradiating the surface to be machined with the plurality of beams of the laser light emitted to form a plurality of focused spots separated from each other, the plurality of focused spots each causing ablation; and moving the light collection optical system and the surface to be machined relative to each other both to simultaneously form a plurality of grooves on the surface to be machined.
Provided are a light-emitting gas recovery method and a recovery apparatus that allow light-emitting gas to be recover efficiently. A light-emitting gas recovery method includes: a step (a) of preparing a lamp to be discarded including a tube body filled with the light-emitting gas; a step (b) of placing the lamp in an internal space of a chamber; a step (c) of reducing an air pressure in the internal space of the chamber; a step (d) of applying energy to a part of the tube body to allow an internal space of the tube body and the internal space of the chamber to communicate with each other without entirely breaking the tube body, and releasing the light-emitting gas from the tube body; and a step (e) of discharging a first gas present in the internal space of the chamber toward a recovery mechanism after the step (d).
H01J 61/28 - Moyens de production ou d'introduction du gaz ou de la vapeur dans l'enceinte ou de recharge de celle-ci en gaz ou en vapeur au cours du fonctionnement de la lampe
H01J 61/26 - Moyens d'absorption ou d'adsorption du gaz, p. ex. par un getterMoyens pour empêcher le noircissement de l'enveloppe
Provided is a light source unit in which mounted light-emitting elements are cooled more homogeneously. The light source unit includes: a substrate having a first main surface on which a plurality of light-emitting diodes (LEDs) are mounted; a first through hole that communicates between the first main surface and a second main surface on a side opposite to the first main surface, the first through hole having a center located within a predetermined range from the center of gravity of the first main surface when viewed in a direction orthogonal to the first main surface of the substrate; a heatsink provided on the side of the second main surface of the substrate; and a first fixing screw that is inserted through the first through hole of the substrate and screwed into a screw hole, provided corresponding to the first through hole, to fix the substrate and the heatsink.
A photoheating apparatus includes: a light-emitting element substrate on which a plurality of light-emitting elements is mounted on a mounting surface being one main surface; a heat sink provided on a main surface of the light-emitting element substrate on a side opposite to the mounting surface, the heat sink including a plurality of heat absorbing flow paths through which a coolant flows; a flow path structure provided on a side surface of the heat sink opposite to the light-emitting element substrate, the flow path structure including a main body, a supply port through which the coolant flows from an outside to an inside of the main body, and a discharge port through which the coolant is discharged from the inside to the outside of the main body.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
F28F 9/22 - Dispositions pour diriger les sources de potentiel calorifique dans des compartiments successifs, p. ex. aménagement des plaques de guidage
The present invention accurately adjusts the film thickness of a liquid starting material. A light-emitting unit according to one aspect of the present technology comprises a housing part, an accommodation part, a rotation body, a first film thickness adjustment mechanism, and a shield body. An energy beam can pass through the housing part. The accommodation part is disposed inside the housing part and can accommodate a liquid starting material. The rotation body is rotatable about a rotation axis in a direction intersecting a gravity direction, and has a first region which is immersed in the liquid starting material accommodated in the accommodation part, and a second region which is located downstream of the first region in the rotation direction of the rotation body, to which the liquid starting material adheres, and which includes an energy beam irradiation position. The first film thickness adjustment mechanism is disposed at a position upstream of the irradiation position, and adjusts the film thickness of the liquid starting material adhering to the second region to a first film thickness. The shield body is disposed between the first film thickness adjustment mechanism and the liquid surface of the liquid starting material accommodated in the accommodation part and between the second region and the housing part, and has an opposite surface facing the liquid surface in a vertical direction.
G21K 1/00 - Dispositions pour manipuler des particules ou des rayonnements ionisants, p. ex. pour focaliser ou pour modérer
G21K 5/02 - Dispositifs d'irradiation n'ayant aucun moyen pour former le faisceau
G21K 5/08 - Supports pour cibles ou pour objets à irradier
H01J 35/10 - Anodes tournantesDispositions pour anodes tournantesRéfrigération des anodes tournantes
H01J 35/26 - Tubes, dans lesquels le point d'impact du rayon cathodique sur l'anode ou l'anticathode est déplaçable par rapport à la surface de celles-ci par rotation de l'anode ou de l'anticathode
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
A fluid treatment device includes an inner tube; an outer tube that is provided so as to surround the inner tube; a discharge space in which a discharge gas is filled in a space sandwiched between the inner tube and the outer tube; a first electrode and a second electrode that are configured to apply a voltage to the discharge space; a flow path that is provided inside the inner tube and through which a treatment target fluid flows. The flow path includes a fluid control part that guides the treatment target fluid so as to approach an inner peripheral wall of the inner tube.
To provide a light treatment device that solves a problem caused by deflection of a housing. The light treatment device includes: a light source that irradiates a treatment object conveyed along a conveyance path with ultraviolet light; a housing having the light source therein and having an opening through which the treatment object is carried in or out; and a heat deflection reducer that reduces heat deflection of the housing surrounding the opening.
B05D 3/06 - Traitement préalable des surfaces sur lesquelles des liquides ou d'autres matériaux fluides doivent être appliquésTraitement ultérieur des revêtements appliqués, p. ex. traitement intermédiaire d'un revêtement déjà appliqué, pour préparer les applications ultérieures de liquides ou d'autres matériaux fluides par exposition à des rayonnements
B05D 1/32 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces en utilisant des moyens pour protéger des parties de surface à ne pas recouvrir, p. ex. en se servant de stencils, d'enduits de protection
B05D 5/02 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces pour obtenir des effets, finis ou des structures de surface particuliers pour obtenir une surface mate ou rugueuse
B05D 7/14 - Procédés, autres que le flocage, spécialement adaptés pour appliquer des liquides ou d'autres matériaux fluides, à des surfaces particulières, ou pour appliquer des liquides ou d'autres matériaux fluides particuliers à du métal, p. ex. à des carrosseries de voiture
B08B 7/00 - Nettoyage par des procédés non prévus dans une seule autre sous-classe ou un seul groupe de la présente sous-classe
28.
DESMEAR TREATMENT METHOD AND OPTICAL TREATMENT DEVICE
The present invention provides a method with which it is possible to effectively perform a desmear treatment. This desmear treatment method includes: irradiating a substrate that has a hole and a smear in the hole with vacuum ultraviolet light so that the contact angle with water of the substrate is 40-70 degrees; supplying a swelling liquid for swelling the smear to the substrate that has been irradiated with the vacuum ultraviolet light; and supplying a removal liquid for removing the smear from the substrate to the substrate in which the smear has been swollen.
An infrared LED element includes: a conductive support substrate; and a semiconductor laminate and includes a material that can be lattice-matched with InP, in which the semiconductor laminate includes: a first semiconductor layer indicating a first conductivity type; an active layer disposed on an upper layer of the first semiconductor layer; a second semiconductor layer disposed on an upper layer of the active layer and indicating a second conductivity type; and a third semiconductor layer disposed on an upper layer of the second semiconductor layer and contains AlaGabIncAs indicating the second conductivity type, the third semiconductor layer has an uneven part on a surface opposite to a side on which the second semiconductor layer is positioned, and the third semiconductor layer has band gap energy lower than band gap energy of the second semiconductor layer and higher than band gap energy of the active layer.
H01L 33/10 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure réfléchissante, p.ex. réflecteur de Bragg en semi-conducteur
H01L 33/02 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs
H01L 33/18 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure cristalline ou une orientation particulière, p.ex. polycristalline, amorphe ou poreuse au sein de la région électroluminescente
H01L 33/30 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique
A light source device according to one embodiment of the present invention generates wavelength-swept light, and is equipped with a pulsed light source, a pulse stretcher, and a fan device. The pulsed light source generates pulsed light including a continuous spectrum. The pulse stretcher is configured so as to stretch the pulsed light on the time axis and generate the wavelength-swept light. The fan device supplies air to the pulse stretcher. In this way, it becomes possible to suppress temperature changes in the pulse stretcher, and to stably output wavelength-swept light.
G01J 3/10 - Aménagements de sources lumineuses spécialement adaptées à la spectrométrie ou à la colorimétrie
G01J 1/08 - Agencements des sources lumineuses spécialement adaptées à la photométrie
G01J 11/00 - Mesure des caractéristiques d'impulsions lumineuses individuelles ou de trains d'impulsions lumineuses
G01N 21/01 - Dispositions ou appareils pour faciliter la recherche optique
G02B 6/30 - Moyens de couplage optique pour usage entre fibre et dispositif à couche mince
H01S 3/00 - Lasers, c.-à-d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet
H01S 3/04 - Dispositions pour la gestion thermique
H01S 3/10 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p. ex. commutation, ouverture de porte, modulation ou démodulation
Provided is an excimer lamp in which distortion generated in a light-emitting tube is reduced using a configuration that can be implemented more easily and which can be used for a longer period of time. The present invention comprises: a light-emitting tube extending in a first direction, the light-emitting tube including a first region and a second region having a thicker the tube wall than the first region in a first cross-section when cut in a plane orthogonal to the first direction, concave and convex portions being formed on the outer wall surface by means of the first region and the second region, and the light-emitting tube exhibiting translucency with respect to ultraviolet light; a pair of electrodes that face each other with the tube wall of the light-emitting tube interposed therebetween in the radial direction of the light-emitting tube; and a light extraction unit for extracting ultraviolet light generated within the light-emitting tube to the outside of the light-emitting tube.
Provided are an odor suppression method and an odor suppression system that are capable of effectively deactivating urease. This odor suppression method involves emitting, on an object surface on which urease remains, ultraviolet light having a main emission wavelength belonging to a wavelength band of 200-235 nm. In addition, this odor suppression system comprises a light source that emits ultraviolet light having a main emission wavelength belonging to the wavelength band of 200-235 nm. The light source emits the ultraviolet light to an object surface on which urease remains. The light source is incorporated in an object constituting the object surface, or at a place adjacent to the object.
The present invention suppresses the temperature rise of a collector workpiece due to irradiation with energy particles. The electrode manufacturing method has: an irradiation step of irradiating at least one surface of a collector workpiece 40 constituting an electrode with energy particles to perform irradiation treatment; and a coating step of applying an active material slurry 50 to the surface of the collector workpiece on which the irradiation treatment has been performed. In the irradiation step, irradiation of the same irradiated region of the collector workpiece 40 with the energy particles for a predetermined irradiation time is performed multiple times, and an irradiation pause time for pausing the irradiation of the same irradiated region with the energy particles is provided between each irradiation in the multiple times of irradiations with the energy particles and the next irradiation.
The present invention suppresses the progress of surface oxidation of a current collector caused by moisture in the atmosphere in which an irradiation treatment using energy particles is carried out. This electrode manufacturing method for a secondary battery comprises an irradiation step for performing an irradiation treatment by irradiating, with energy particles, at least one face of a current collector workpiece 40 that comprises an electrode; and a coating step for applying an active material slurry 50 onto the face of the current collector workpiece 40, which has been subjected to the irradiation treatment with the energy particles during the irradiation step, where the irradiation treatment is performed in a dry atmosphere which is an atmosphere containing no moisture.
In this light measurement device, deterioration of measurement accuracy which is caused by dispersion in spectral characteristics of an AWG is inhibited. A pulse light source 210 generates broadband pulse light L1a. An AWG 260A spatially divides the broadband pulse light L1a in accordance with the wavelength, and emits a plurality of divided beams. A plurality of fibers 230_1 to 230_n give different delays to the plurality of divided beams. A coupler 250 spatially multiplexes a plurality of beams outputted from the plurality of fibers 230_1 to 230_n. The AWG 260A includes a plurality of entry waveguides 262_1 to 262_3, and is configured to allow selective entry of the broadband pulse light L1a into one of the plurality of entry waveguides 262_1 to 262_3.
A semiconductor laser element includes a plurality of three or more laser resonators integrated adjacent to each other in the first direction. Each laser resonator has an independent power supply electrode, a second direction which is regarded as a longitudinal direction, and an end face which is coated. A plurality of electrode pads are formed in a pad region adjacent to the laser region in the first direction. Each of the wirings for connection extends in the first direction and is electrically connected the power supply electrode of the corresponding laser resonator and the corresponding electrode pad. The thick film pad is formed on the pad region and is higher than the multilayered wiring structure of the wirings for connection.
The present invention reduces cost without reducing yield. This plant growth device, which uses artificial light to grow plants, comprises: a growing space for growing a plant; at least one light source panel for irradiating the growing space with artificial light; a cultivation tank in which a liquid fertilizer, which is a nutrient solution containing a fertilizer to be fed to the plant, is stored and at least a root of the plant is disposed; a measurement device for repeatedly measuring an amount corresponding to a fertilizer absorption amount of the plant; and an environment control device which, when the rate of decrease in the amount measured by the measurement device within a set period is larger than a threshold value, controls the growth environment for the plant to be changed to an environment where photosynthesis of the plant is suppressed.
The purpose of the present invention is to provide an infrared LED element capable of securing high light extraction efficiency and further improving light distribution of emitted light while having a predetermined thickness. Provided are: an InP substrate having a thickness of 30 µm or more, where one main surface is a light emitting surface, and a laminate disposed on a main surface side different from the light emitting surface of the InP substrate. The laminate includes: a first semiconductor layer of a first conductive type which is p type or n type, an active layer formed on the upper layer of the first semiconductor layer, and a second semiconductor layer formed on the upper layer of the active surface, of a second conductive type different from the first conductive type. When the peak wavelength is λp, the surface roughness of the light emission surface of the InP substrate is Ra1, the surface roughness of the side surface of the InP substrate is Ra2, and the refractive index of the InP substrate corresponding to the peak wavelength λp is n (λp), a predetermined expression is satisfied.
H01L 33/22 - Surfaces irrégulières ou rugueuses, p.ex. à l'interface entre les couches épitaxiales
H01L 33/30 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique
H01L 33/44 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les revêtements, p.ex. couche de passivation ou revêtement antireflet
This optical measurement device (1) is provided with a light source device (35) that emits wavelength-swept light, a conveyance device (10) that conveys a measurement object M, an irradiation device (40) that that guides the wavelength-swept light from the light source device (35) to a measurement position P on the conveyance path of the conveyance device (10) and has an optical path switching unit (42) that switches the optical path, a measurement light-receiving device (51) that receives the wavelength-swept light emitted to the measurement position P, an object detection sensor (55) that detects the conveyed measurement object M, a conveyance detection sensor that detects the conveyance speed or the displacement in the conveyance direction of the measurement object M, and a control device (65). The control device (65) estimates the timing at which the measurement object M reaches the measurement position P on the basis of the detection by the object detection sensor (55) and the conveyance speed or the displacement in the conveyance direction detected by the conveyance detection sensor, and controls the optical path switching unit (42) at this timing to configure the optical path so that the light reception device receives the wavelength-swept light while the measurement object M is present at the measurement position P.
G01N 21/3563 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge pour l'analyse de solidesPréparation des échantillons à cet effet
B07C 5/342 - Tri en fonction d'autres propriétés particulières selon les propriétés optiques, p. ex. la couleur
G01J 3/42 - Spectrométrie d'absorptionSpectrométrie à double faisceauSpectrométrie par scintillementSpectrométrie par réflexion
G01N 21/85 - Analyse des fluides ou solides granulés en mouvement
B65G 15/58 - Courroies ou porte-charges sans fin analogues avec moyens pour tenir ou retenir les charges dans la position fixée, p. ex. magnétiques
To provide an optical heating device capable of more efficiently enhancing illuminance of heating light with respect to a peripheral end part of an object to be heated. Provided is an optical heating device for irradiating an object to be heated with light to heat the object to be heated, characterized in that: the optical heating device comprises a light source unit having a support unit for supporting the object to be heated, a plurality of first LEDs positioned outside a central part of the object to be heated when viewed in a direction normal to a main surface of the object to be heated supported by the support unit, and a plurality of second LEDs positioned in a region facing the center part of the object to be heated, and also comprises a first optical system arranged between the object to be heated and the light source unit in the direction normal to the main surface of the object to be heated; and the first optical system refracts at least some of first heating light emitted by the first LEDs so that the refracted light advances to a peripheral end part of the object to be heated.
In a distributed feedback semiconductor laser element, a multi-layered structure includes a GaN substrate, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, and a ridge waveguide is formed. A first diffraction grating is formed adjacent to and on both sides of the ridge waveguide. A depth d of a groove of the first diffraction grating is included in the range of 50 nm d≤200 nm, and a duty ratio duty is included in the range of an inequality (1) using constants a, b, c, and n defined for the order of the diffracted light.
In a distributed feedback semiconductor laser element, a multi-layered structure includes a GaN substrate, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, and a ridge waveguide is formed. A first diffraction grating is formed adjacent to and on both sides of the ridge waveguide. A depth d of a groove of the first diffraction grating is included in the range of 50 nm d≤200 nm, and a duty ratio duty is included in the range of an inequality (1) using constants a, b, c, and n defined for the order of the diffracted light.
-
d
-
c
a
n
+
b
≦
duty
≦
d
-
c
a
n
+
b
(
1
)
H01S 5/12 - Structure ou forme du résonateur optique le résonateur ayant une structure périodique, p. ex. dans des lasers à rétroaction répartie [lasers DFB]
H01S 5/22 - Structure ou forme du corps semi-conducteur pour guider l'onde optique ayant une structure à nervures ou à bandes
The present invention provides a compact light-source device capable of obtaining line-shaped illumination light while using a solid light-source. This fluorescent light-source device is provided with: a plurality of semiconductor laser elements; a plurality of collimating optical systems which respectively reduce the divergence angles of light emitted from emitters of the plurality of semiconductor laser elements; a reflective optical system which includes a plurality of reflective elements that respectively convert the traveling directions of light emitted from the plurality of collimating optical systems; a condensing optical system which condenses the light emitted from the plurality of reflective elements; and a fluorescent member into which the light emitted from the condensing optical system enters and from which fluorescence having a wavelength different from that of the entering light is emitted. On the surface of the fluorescent member, irradiation regions where images of the emitters of the plurality of semiconductor laser elements are respectively projected are formed. The inclination angles of the respective reflection surfaces of the plurality of reflection elements are set so that the irradiation regions exhibits a line shape.
F21S 2/00 - Systèmes de dispositifs d'éclairage non prévus dans les groupes principaux ou , p. ex. à construction modulaire
F21V 9/35 - Éléments contenant un matériau photoluminescent distinct de la source de lumière ou espacé de cette source caractérisés par la disposition du matériau photoluminescent aux points focaux, p. ex. des réfracteurs, lentilles, réflecteurs ou réseaux de sources de lumière
F21V 14/04 - Commande de la distribution de la lumière émise par réglage d’éléments constitutifs par un mouvement de réflecteurs
According to the present invention, the lifespans of a fluid treatment device and peripheral devices located in the vicinity of the fluid treatment device are extended. This fluid treatment device comprises: a light-emitting tube; a light-emitting gas that is sealed inside the light-emitting tube, and emits ultraviolet rays including a wavelength of at most 200 nm by dielectric barrier discharge; a container that has a hole for inserting the light-emitting tube, contains a fluid to be treated with the ultraviolet rays, and blocks the ultraviolet rays; a pair of electrodes arranged so as to sandwich the light-emitting gas; a base part that fixes the light-emitting tube to the container in a state where the light-emitting tube is inserted in the hole; and a light-blocking material for preventing the ultraviolet rays from leaking outside the container.
The present invention addresses the problem of providing a storage device which makes it possible to accurately calculate the amount of contents stored in a container. A storage device according to one aspect of the present technology has a storage unit (40), a temperature sensor (46), a temperature adjustment mechanism (47), and a calculation unit (51). The storage unit (40) stores contents (1) and has a side section. The temperature sensor (46) is disposed on a surface on the outer side of the side section. The temperature adjustment mechanism (47) can maintain, at a predetermined temperature, the temperature of the contents (1) stored in the storage unit (40). The calculation unit (51) calculates the amount of the contents (1) stored in the storage unit (40) on the basis of the temperature detected by the temperature sensor (46).
G21G 4/04 - Sources radioactives autres que les sources de neutrons
G21K 1/00 - Dispositions pour manipuler des particules ou des rayonnements ionisants, p. ex. pour focaliser ou pour modérer
G21K 5/02 - Dispositifs d'irradiation n'ayant aucun moyen pour former le faisceau
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
45.
PLANT CULTIVATION DEVICE AND PLANT CULTIVATION METHOD
In the present invention, the saturation of photosynthesis efficiency of a plant is avoided and the waste of light energy is reduced. This plant cultivation device for growing a plant with artificial light is provided with a growing space 30 in which a plant 200 is grown and at least one light source panel 32 for irradiating the growing space with artificial light Li. The light source panel has a substrate 33 and a plurality of light output units 34 arranged at intervals on the substrate. The photon flux density B (μmol·m-2·s-1) of the artificial light emitted from one light output unit is less than or equal to the photosynthesis saturated light intensity L of a leaf of the plant.
Provided is a power feeding/receiving socket whereby a bus cable can be reliably connected with a connection line that extends from a power feeding/receiving body, and whereby even in situations in which the bus cable has become crooked, load does not act on the connection line, making it possible to prevent damage at the connection section. A power feeding/receiving socket 2 comprises: a socket body 3 in which a portion of a bus cable 5 is embedded penetrating lateral faces of the socket body; and a current-feeding member 4 having a first current-feeding part 41 that is deployed inside the socket body 3 and that is electrically connected to the bus cable 5, and having a planar second current-feeding part 42 that is electrically connected with the first current-feeding part 41 and that is exposed to an opening of the socket body 3 so as to come into contact with a power feeding/receiving member 11 provided on an end section of a power feeding/receiving unit 6.
Provided are: a light source apparatus capable of suppressing a change in pressure on a light source side due to a change in pressure on an introduction side of radiation light; and a cleaning method. A light source apparatus according to one embodiment of the present invention is provided with a first vacuum chamber, a light source unit, and a debris reduction device. The light source unit generates plasma which serves as a light source in the first vacuum chamber. The debris reduction device reduces debris dissipated from the plasma. The debris reduction device forms a vacuum path that allows radiation light emitted from the plasma to pass therethrough, and that connects the first vacuum chamber and a second vacuum chamber into which the radiation light is introduced, and generates a high-pressure region whose pressure is higher than the pressure of the first vacuum chamber and the pressure of the second vacuum chamber so as to block the vacuum path.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
Provided is a device capable of generating a pulse current that exhibits a high current peak in a short time with high reproducibility. The electric pulse generating device is provided with a load circuit unit arranged such that an output voltage from a high voltage source can be applied thereto. The load circuit unit includes a switching element connected in series with an object to be energized, a capacitor, and a diode, and when the switching element is in a conducting state, forms a first closed circuit, which is a series circuit including the capacitor, the object to be energized, and the switching element. The diode, has an anode terminal and a cathode terminal that are connected respectively to two points on the first closed circuit. At the point in time at which the switching element transitions from a non-conducting state to the conducting state in a state in which the capacitor is charged, the connection point between the cathode terminal and the first closed circuit is disposed at a position that is electrically closer to the high potential side terminal of the capacitor than the connection point between the anode terminal and the first closed circuit.
H03K 3/57 - Générateurs caractérisés par le type de circuit ou par les moyens utilisés pour produire des impulsions par l'utilisation d'un élément accumulant de l'énergie déchargé dans une charge par un dispositif interrupteur commandé par un signal extérieur et ne comportant pas de réaction positive le dispositif de commutation étant un dispositif à semi-conducteurs
Provided are a plasma generation mechanism and a light source device capable of preventing the deposition of debris caused by plasma generation. A plasma generation mechanism according to one embodiment of the present invention is provided with a light source device that extracts radiation by converting a liquid plasma raw material into plasma by irradiation with an energy beam. The plasma generation mechanism comprises a rotating body, a rotation driving source, a raw material supply unit, a shielding part, a heating mechanism, and a liquid guiding part. The rotating body has a rotation surface that rotates around a rotation axis. The rotation driving source rotates the rotating body around the rotation axis. The raw material supply unit supplies the plasma raw material to the rotation surface. The shielding part faces an irradiation position of the rotation surface which is irradiated with the energy beam. The heating mechanism heats the shielding part to a temperature greater than or equal to the melting point of the plasma raw material. The liquid guiding part guides, to the raw material supply unit, the plasma raw material introduced from the shielding part.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
50.
LIGHT SOURCE DEVICE AND FILM THICKNESS ADJUSTMENT MECHANISM
The present invention applies a liquid raw material with a constant film thickness even at a high rotational speed. In a light source device according to the present technology, a contact member is brought into contact with an irradiation surface that is irradiated with an energy beam. The contact member is supported in a manner movable in a direction orthogonal to the irradiation surface and is pressed against the irradiation surface. The cross-sectional area of the contact member on a plane parallel to the irradiation surface increases from the position of contact between the contact member and the irradiation surface toward the contact member side. This makes it possible to apply a liquid raw material with a constant film thickness even at a high rotational speed.
Provided is a substrate processing method for obtaining a desired fine pattern by improving the etching resistance of a side wall. This substrate processing method comprises: out of an ALD film that is formed on a substrate having a three-dimensional structure, irradiating at least a side wall of the ALD film that conforms to the three-dimensional structure with vacuum ultraviolet light to modify the ALD film; etching back the ALD film so as to leave the side wall of the ALD film that conforms to the three-dimensional structure; and etching the substrate by using the modified ALD film left in the etch back as an etching mask.
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
H01L 21/316 - Couches inorganiques composées d'oxydes, ou d'oxydes vitreux, ou de verres à base d'oxyde
52.
OPTICAL HEATING METHOD, OPTICAL HEATING DEVICE FOR SiC SEMICONDUCTOR, AND LED LIGHT-SOURCE DEVICE
Provided is an optical heating method by which it is possible to efficiently heat a processing body containing an SiC semiconductor. The present invention includes a step (a) in which a processing body containing an SiC semiconductor is irradiated, via a window member, with heating light that is emitted from an LED light source and that has a peak wavelength in the range of 370-460 nm, and as a result thereof, the processing body is heated.
Provided is an ultraviolet irradiation device capable of suppressing deformation of an irradiated object as a result heat generated by ultraviolet irradiation, and maintaining accuracy of the irradiated object. The ultraviolet irradiation device according to one embodiment of the present invention radiates ultraviolet rays towards an object to be irradiated and comprises an ultraviolet light source, a stage and a heat absorption body. The ultraviolet light source emits ultraviolet rays. The stage supports the object to be irradiated. The heat absorption body is disposed between the object to be irradiated and the stage and absorbs heat generated by ultraviolet rays emitted from the ultraviolet light source.
B01J 19/12 - Procédés utilisant l'application directe de l'énergie ondulatoire ou électrique, ou un rayonnement particulaireAppareils à cet usage utilisant des radiations électromagnétiques
C23C 14/04 - Revêtement de parties déterminées de la surface, p. ex. au moyen de masques
54.
PLANT WITHERING/KILLING METHOD AND PLANT WITHERING/KILLING SYSTEM
Provided are a plant withering/killing method and a plant withering/killing system that are capable of reliably withering/killing a plant by using ultraviolet rays. A plant withering/killing method includes a process of applying ultraviolet rays to a plant from an ultraviolet light source, the ultraviolet rays having a peak wavelength within a wavelength range of 200 nm to 280 nm, wherein the process of applying the ultraviolet rays is performed in a darkened environment.
An illumination optical system, which irradiates a target object with light from a light source unit includes: an integrator optical system that is disposed on an optical path of the light emitted from the light source unit and uniformizes an illuminance distribution of the light with which the target object is to be irradiated; an input lens that is disposed on a light incident side of the integrator optical system; a bandpass filter that is disposed between the input lens and the integrator optical system; an aperture that is disposed on a light emission side of the integrator optical system; and a condenser lens that irradiates the target object with light emitted from the aperture, the aperture having a size larger than a size of an irradiation region of the light with which the target object is to be irradiated.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Provided is a culture container capable of suppressing the humidity of the atmosphere from decreasing during cell culturing, while also suppressing the need to increase the size of the culture container itself. This culture container comprises: a first region in which cells are cultured; a second region in which a moisturizing liquid is stored, the second region being located outward of the first region and formed in a bottomed opening space including the bottom surface and side surfaces surrounding the periphery of the bottom surface; and a liquid holder that includes a porous structure part and is arranged so as to be in contact with the moisturizing liquid such that a portion is positioned above the liquid surface of the moisturizing liquid in the second region.
A structure according to one embodiment of the present invention comprises a main body part, a first moisture-proof layer, and a second moisture-proof layer. The main body part is constituted by stacking a plurality of sheet-like members that are mainly composed of carbon fibers, and has a first main surface and a second main surface, which are opposite to each other in the stacking direction of the plurality of sheet-like members. The first moisture-proof layer is superposed on the first main surface, and at least a part of the surface thereof on the reverse side from the surface that is superposed on the first main surface is composed of a ceramic material. The second moisture-proof layer is superposed on the second main surface, and is composed of a material that is different from the ceramic material.
B32B 5/28 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par la présence de plusieurs couches qui comportent des fibres, filaments, grains ou poudre, ou qui sont sous forme de mousse ou essentiellement poreuses une des couches étant fibreuse ou filamenteuse imprégnée de matière plastique ou enrobée dans une matière plastique
B32B 18/00 - Produits stratifiés composés essentiellement de céramiques, p. ex. de produits réfractaires
An infrared LED element includes: an InP substrate that has a first principal surface and a second principal surface; a first semiconductor layer formed on or over the first principal surface of the InP substrate; an active layer formed on or over the first semiconductor layer; a second semiconductor layer formed on or over the active layer; a first electrode formed on or over the first semiconductor layer in a region in which the active layer is not formed; a second electrode formed on or over the second semiconductor layer at a position apart from the first electrode in a direction parallel to the first principal surface of the InP substrate; and a relief portion formed on the second principal surface of the InP substrate and having periodicity in a direction parallel to the second principal surface.
H01L 33/20 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une forme particulière, p.ex. substrat incurvé ou tronqué
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/30 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique
H01L 33/44 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les revêtements, p.ex. couche de passivation ou revêtement antireflet
The dielectric barrier discharge plasma generator includes: a dielectric substrate that exhibits a plate shape extending in a first direction and has a first surface and a second surface located on an opposite side of the first surface in a second direction orthogonal to the first direction; a first electrode disposed on the dielectric substrate on a side of the first surface; a second electrode disposed at a position separated from the second surface of the dielectric substrate in the second direction; a gas flow path that is formed by a gap between the dielectric substrate and the second electrode and through which a gas flows in a third direction orthogonal to the first direction and the second direction; and an outlet provided at a first end which is one end portion of the gas flow path in the third direction.
Provided are: a fluid treatment device that can stably light an ultraviolet light irradiation unit independently of the treatment state of the fluid; and a lighting circuit. The device comprises: a lighting circuit that includes a DC power source, a transformer having a primary winding and a secondary winding, and a switching element, and is configured to generate an electromotive force in the secondary winding of the transformer through the switching of the ON state and OFF state of the switching element; an ultraviolet light irradiation unit connected to the secondary winding of the transformer, the ultraviolet light irradiation unit having a first electrode, which is disposed in a light-emitting tube filled with a light-emitting gas, and a second electrode, which is disposed at a distance from the light-emitting tube, and having a space, interposed between the first electrode and the second electrode, into which the fluid to be treated flows; a detection unit that detects the electrical conductivity of the fluid; and a control unit that controls the frequency at which the ON state and OFF state of the switching element is switched, the frequency being controlled on the basis of the electrical conductivity of the fluid detected by the detection unit or a parameter related to the electrical conductivity of the fluid.
C02F 1/32 - Traitement de l'eau, des eaux résiduaires ou des eaux d'égout par irradiation par la lumière ultraviolette
B01J 19/12 - Procédés utilisant l'application directe de l'énergie ondulatoire ou électrique, ou un rayonnement particulaireAppareils à cet usage utilisant des radiations électromagnétiques
Provided is an optical processing device having enhanced processing efficiency. This optical processing device is provided with: a light source that shines ultraviolet light onto a surface of a workpiece that is being conveyed along a conveying path; a lamp house inside which the light source is disposed, the lamp house having a gas supply port for supplying an inert gas into the inside of the lamp house, and an opening in an emission direction of the ultraviolet light; and an outside air inflow suppressing unit that suppresses an inflow of outside air from outside the lamp house into the inside of the lamp house.
B01J 19/12 - Procédés utilisant l'application directe de l'énergie ondulatoire ou électrique, ou un rayonnement particulaireAppareils à cet usage utilisant des radiations électromagnétiques
B29C 35/08 - Chauffage ou durcissement, p. ex. réticulation ou vulcanisation utilisant l'énergie ondulatoire ou un rayonnement corpusculaire
B29C 59/02 - Façonnage de surface, p. ex. gaufrageAppareils à cet effet par des moyens mécaniques, p. ex. par pressage
62.
WIRING BOARD MANUFACTURING METHOD, AND WIRING BOARD
A wiring board manufacturing method according to one embodiment of the present invention includes a step for irradiating an insulating resin layer with vacuum ultraviolet rays, and a step for using sputtering to form a copper film directly on the insulating resin layer which has been irradiated with the vacuum ultraviolet rays.
H05K 3/38 - Amélioration de l'adhérence entre le substrat isolant et le métal
H05K 3/18 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de la précipitation pour appliquer le matériau conducteur
Provided is an ultraviolet light radiation device capable of increasing the output of light in a wavelength region belonging in the range of 200-235 nm. This ultraviolet light radiation device comprises: a light-emitting unit that emits light demonstrating light intensity in at least a wavelength region belonging in the range of 200-235 nm, and a wavelength region belonging in the range of 700-3000 nm; a spectral dispersing unit that is arranged so as to receive the light emitted from the light-emitting unit, and that causes the direction in which ultraviolet light demonstrating light intensity in the wavelength region belonging in the range of 200-235 nm proceeds and the direction in which infrared light demonstrating light intensity in the wavelength region belonging in the range of 700-3000 nm proceeds to differ; and a wavelength selection unit that is arranged between the light-emitting unit and the spectral dispersing unit, or at a later stage from the spectral dispersing unit, and that allows the transmission of the light in the wavelength region belonging in the range of 200-235 nm while blocking the transmission of light in a 240-280 nm wavelength range.
A61L 2/10 - Procédés ou appareils de désinfection ou de stérilisation de matériaux ou d'objets autres que les denrées alimentaires ou les lentilles de contactAccessoires à cet effet utilisant des phénomènes physiques des radiations des ultraviolets
A61N 5/06 - Thérapie par radiations utilisant un rayonnement lumineux
H01J 61/86 - Lampes à décharge resserrée par une haute pression à resserrement supplémentaire de la décharge par réduction de l'espace interélectrodes, p. ex. pour la projection optique
Provided are a method and a reaction vessel for efficiently performing a chemical reaction. The method comprises: charging a mixed solution containing a polar solute and a non-polar solute into a reaction vessel; separating the mixed solution into a first solution layer mainly containing the polar solute and a second solution layer mainly containing the non-polar solute in the reaction vessel; and emitting light outside the reaction vessel toward the interface between the first solution layer and the second solution layer mainly through one of the first solution layer and the second solution layer that has a lower light absorption rate, to cause a chemical reaction of the polar solute with the non-polar solute. The reaction vessel, into which a mixed solution containing a polar solute and a non-polar solute is to be charged, is provided with a light guide unit that is disposed so as to cause light outside the reaction vessel to enter the reaction vessel and be emitted toward the interface between a first solution layer mainly containing the polar solute and a second solution layer mainly containing the non-polar solute, mainly through one of the first solution layer and the second solution layer that has a lower light absorption rate.
B01J 19/12 - Procédés utilisant l'application directe de l'énergie ondulatoire ou électrique, ou un rayonnement particulaireAppareils à cet usage utilisant des radiations électromagnétiques
An exposure apparatus includes: a light-emission unit that emits exposure light; a mask stage that holds an exposure mask; a workpiece stage that holds a workpiece; a projection optical system that irradiates the workpiece held by the workpiece stage with the exposure light emitted from the light-emission unit through the exposure mask; a reflective member disposed in an irradiation region for the exposure light applied from the projection optical system in a step of detecting a mask mark of the exposure mask; an alignment microscope that is disposed in an optical path of the exposure light applied to the mask mark and captures an image of the mask mark on the basis of reflected light reflected by the reflective member in the detection step; and a moving mechanism that moves the reflective member from a position deviated from the irradiation region to the irradiation region in the detection step.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Provided is a nerve cell culture chip with which it is possible to increase the probability that a neurite grown from a cultured nerve cell will be introduced into a microchannel. The nerve cell culture chip comprises: a bottom plate; a base part that is fixedly in contact with an upper surface of the bottom plate; a first well and a second well that are formed so as to penetrate through the base part and expose the bottom plate, at locations that are separated in a first direction parallel to the main surface of the base part; a microchannel that communicates the first well and the second well in the first direction, in a region overlapping with the base part in a second direction pependicular to the main surface of the base part; and a first groove that is formed in one section of a bottom section of the first well, and is in communication with an end section of the microchannel in the first direction.
Provided are a plant growth device and a plant growth method capable of suppressing a difference in growth between plants on a plant-by-plant basis. In a plant growth device 100, plants are grown using artificial light. The plant growth device 100 includes: an artificial light source 10 that irradiates plants 200 with artificial light; an air supply port 41 provided on either one of an upper side or lower side from the plants 200 to supply air to a growing space 40 in which the plants 200 are grown; and an air exhaust port 42 provided on the other one of the upper side or lower side from the plants 200 to exhaust air in the growing space 40.
TOKYO METROPOLITAN PUBLIC UNIVERSITY CORPORATION (Japon)
Inventeur(s)
Samejima,takanori
Oiwa,masato
Otsuka,yuichi
Harada,tomonori
Yamazoe,seiji
Abrégé
Provided is a carbon dioxide recovery method that is capable of desorbing and recovering absorbed carbon dioxide from an absorber with less energy. This carbon dioxide recovery method comprises: a step (a) for preparing a first absorber that is an absorber before absorbing carbon dioxide, by causing a solid material made of a porous substance having pores in the surface thereof to carry, in the pores, a carbon dioxide absorptive liquid containing a cyclic diamine which exhibits basicity; a step (b) for preparing a second absorber that is a carbon dioxide-absorbed absorber, by causing the first absorber to absorb carbon dioxide; a step (c) for supplying heat to the second absorber; and a step (d) for recovering carbon dioxide desorbed from the second absorber through said step (c).
B01D 53/14 - Séparation de gaz ou de vapeursRécupération de vapeurs de solvants volatils dans les gazÉpuration chimique ou biologique des gaz résiduaires, p. ex. gaz d'échappement des moteurs à combustion, fumées, vapeurs, gaz de combustion ou aérosols par absorption
B01D 53/82 - Procédés en phase solide avec des réactifs à l'état stationnaire
B01D 53/96 - Régénération, réactivation ou recyclage des réactifs
B01J 20/22 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtrationAbsorbants ou adsorbants pour la chromatographieProcédés pour leur préparation, régénération ou réactivation contenant une substance organique
An exposure apparatus includes: a light-emission unit that emits exposure light; a mask stage that holds an exposure mask; a workpiece stage that holds a workpiece; a projection optical system that irradiates the workpiece held by the workpiece stage with the exposure light, the exposure light being emitted from the light-emission unit and passing through the exposure mask; a holding member that holds the projection optical system and is connected to the mask stage; a relative-position changing mechanism that changes at least one of a relative position or a relative angle of the exposure mask relative to the projection optical system; and a sensor mechanism that detects the at least one of the relative position or the relative angle of the exposure mask relative to the projection optical system, the at least one of the relative position or the relative angle being changed by the relative-position changing mechanism.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Provided is an optical heating apparatus that allows high flexibility in setting an in-plane heating condition for a processing target substrate. The optical heating apparatus includes: a chamber; a supporter to support the processing target substrate; a light source unit including a plurality of heating groups being configured to emit light; and a controller to control electricity supplied to each of the plurality of the heating groups. One of the processing target substrate and the light source unit is configured to rotate relative to an other on a rotation axis. The plurality of the heating groups each include a plurality of light sources, and a nth and (n+1)th circular rotation loci partially overlap each other. The nth and (n+1)th circular rotation loci are drawn by virtual rotation of the light emission region of each light source belonging to a nth and (n+1)th heating group around the rotation axis.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
Provided are a fluid treatment device and a lighting circuit that allow a dielectric barrier discharge lamp to be stably lit irrespective of state of treatment of a fluid. A fluid treatment device includes: a lighting circuit of a flyback type, the lighting circuit including a direct-current power source, a transformer including a primary winding and a secondary winding, at least one switching element, and a controller to control the switching element; and an ultraviolet irradiation unit connected to the secondary winding of the transformer, the ultraviolet irradiation unit including a light-emitting tube in which a light-emitting gas is sealed, a first electrode disposed in the light-emitting tube, and a second electrode, wherein a space into which a fluid to be treated flows being interposed between the first electrode and the second electrode.
H05B 41/28 - Circuits dans lesquels la lampe est alimentée par une puissance obtenue à partir de courant continu au moyen d'un convertisseur, p. ex. par courant continu à haute tension utilisant des convertisseurs statiques
C02F 1/32 - Traitement de l'eau, des eaux résiduaires ou des eaux d'égout par irradiation par la lumière ultraviolette
Provided is an ultraviolet ray irradiation device that offers high ultraviolet ray extraction efficiency. This ultraviolet ray irradiation device comprises: an excimer lamp having a housing, a light extraction surface provided in a side surface of the housing, a straight tube-shaped light-emitting tube accommodated in the housing, and a first electrode and a second electrode that are spaced apart from each other in a first direction parallel to the tube axis of the light-emitting tube and apply a voltage to the light-emitting tube; and a reflective member that faces toward a central part of the light-emitting tube, has a first reflective surface for reflecting an ultraviolet ray having a component traveling in the first direction, and reflects at least a portion of the ultraviolet ray emitted by the excimer lamp. With respect to the first direction, the first reflective surface of the reflective member is disposed between a first reference point located in the vicinity of a first end of the light-emitting tube and a second reference point located in the vicinity of a second end, the first end being located on the first electrode side, the second end being located on the opposite side to the first end.
A61L 2/10 - Procédés ou appareils de désinfection ou de stérilisation de matériaux ou d'objets autres que les denrées alimentaires ou les lentilles de contactAccessoires à cet effet utilisant des phénomènes physiques des radiations des ultraviolets
A61L 9/20 - Désinfection, stérilisation ou désodorisation de l'air utilisant des phénomènes physiques des radiations des ultraviolets
H01J 65/00 - Lampes sans électrode à l'intérieur de l'enceinteLampes comportant au moins une électrode principale à l'extérieur de l'enceinte
73.
PLANT CULTIVATION DEVICE AND PLANT CULTIVATION METHOD
The present invention provides a plant cultivation device and a plant cultivation method that make it possible to efficiently cultivate a plant while suppressing costs. This plant cultivation device 100 cultivates a plant by means of artificial light. The plant cultivation device 100 comprises: a housing 40 that forms a closed space surrounding a plant 200; and an artificial light source 10 that irradiates the plant 200 with artificial light. The housing 40 has light permeability to the artificial light. The artificial light source 10 is disposed outside the housing 40 and irradiates the plant 200 with the artificial light via the housing 40.
A light source device according to one embodiment of the present art uses energy beam irradiation to convert a liquid raw material into plasma and extract radiation, the light source device comprising a light-emitting unit. The light-emitting unit has a rotating body and a shielding body. The rotating body is capable of rotating about a rotation axis in a direction intersecting the direction of gravity and has an adhesion region to which the liquid raw material adheres. The shielding body has a space part for rotatably accommodating the rotating body, a first energy beam passage part through which an energy beam radiated onto the adhesion region passes, a radiation passage part through which passes radiation generated as a result of the liquid raw material adhering to the adhesion region being irradiated with the energy beam passing through the first energy beam passage part, and a shielding part for shielding the position in the adhesion region that is irradiated with the energy beam as viewed from the direction of the rotation axis.
G21K 1/00 - Dispositions pour manipuler des particules ou des rayonnements ionisants, p. ex. pour focaliser ou pour modérer
G21K 5/02 - Dispositifs d'irradiation n'ayant aucun moyen pour former le faisceau
G21K 5/08 - Supports pour cibles ou pour objets à irradier
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
H05H 1/00 - Production du plasmaMise en œuvre du plasma
A semiconductor laser apparatus includes a drive circuit and an edge emitting semiconductor laser device. An envelope of a spectrum of light emitted from one light emitter when laser oscillation is performed by pulse driving is formed by synthesizing spectra of a plurality of peaks, and a full width at half maximum of the envelope is 3 nm or more.
Provided is a plant growing device and a plant growing method capable of more efficiently growing a plant when growing plants using artificial light. A plant growing device 100 grows a plant using artificial light. The plant growing device 100 includes an artificial light source 10 for irradiating a plant 200 with the artificial light. The artificial light source 10 uniformly or substantially uniformly irradiates, with the artificial light, the whole surface of a side surface of a space occupied by the plant 200 in a cultivation unit 40 for cultivating the plant 200, the side surface being larger than an upper surface of the space.
Provided is an ultraviolet light irradiation apparatus that is capable of emitting more ultraviolet light affecting a human body very little, without an increase in size or complexity of the apparatus as a whole, the ultraviolet light irradiation apparatus having excellent convenience, versatility, durability and the like. The ultraviolet light irradiation apparatus is provided with: a light emitting element having a light emitting surface that emits ultraviolet light; an optical system including a first incident surface on which the ultraviolet light emitted from the light emitting element is made incident, and a first output surface that outputs the ultraviolet light while converting the direction of travel of at least some of light rays included in the incident ultraviolet light; and an optical filter that has a planar second incident surface on which the ultraviolet light output from the optical system is incident, passes part of the ultraviolet light, and reflects another part of the ultraviolet light. When a light beam flux is assumed that travels from the optical filter toward the optical system along a direction normal to the second incident surface, and that is incident on the first output surface, the light emitting element is disposed in a position such that at least some of the light beam flux output from the first incident surface of the optical system irradiates a region outside the light emitting surface on a plane which is an extension of the light emitting surface of the light emitting element.
A61L 9/20 - Désinfection, stérilisation ou désodorisation de l'air utilisant des phénomènes physiques des radiations des ultraviolets
A61L 2/10 - Procédés ou appareils de désinfection ou de stérilisation de matériaux ou d'objets autres que les denrées alimentaires ou les lentilles de contactAccessoires à cet effet utilisant des phénomènes physiques des radiations des ultraviolets
B01J 19/12 - Procédés utilisant l'application directe de l'énergie ondulatoire ou électrique, ou un rayonnement particulaireAppareils à cet usage utilisant des radiations électromagnétiques
The present invention cleans a substrate surface with high cleaning power without using an organic solvent. This substrate cleaning method includes a preparation step for preparing a substrate, a cleaning step for cleaning the substrate, and a drying step for drying the substrate after being cleaned in the cleaning step. The cleaning step includes a first cleaning step for irradiating the surface of the substrate with ultraviolet rays (VUV light), and a second cleaning step for spraying ultrapure water onto the surface of the substrate after being irradiated with ultraviolet rays.
Disclosed herein is a lighting optical system comprising: a light source having a plurality of light-emitting elements configured to emit light from light-emitting surfaces, respectively; a relay optical system configured to convert a luminous intensity distribution of light emitted from each of the light-emitting elements into an irradiance distribution and to superimpose a plurality of the irradiance distributions corresponding to the plurality of light-emitting elements on each other on a superimposed surface; an optical integrator having a plurality of wavefront splitting elements arranged in parallel to each other, the plurality of wavefront splitting elements being configured to wavefront split irradiated light through the relay optical system and to transmit the wavefront split light as a plurality of pencils of light rays; and a condenser optical system configured to superimpose the plurality of pencils of light rays on each other on a surface to be irradiated.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G02B 27/09 - Mise en forme du faisceau, p. ex. changement de la section transversale, non prévue ailleurs
80.
FILM FORMING METHOD AND FILM FORMING APPARATUS FOR MULTILAYER BODY OF SOLAR CELL
According to the present invention, a coating solution can be coated flatly, thereby forming a uniform thin film. A film forming method for a multilayer body of a solar cell according to the present invention comprises: a preparation step for preparing a workpiece on which a multilayer body is to be formed; a first film forming step for forming a first layer of the multilayer body on the workpiece; and a second film forming step for forming a second layer of the multilayer body by coating the surface of the first layer with a solution for the formation of the second layer, the solution containing an organic solvent, while irradiating the workpiece with ultraviolet light. In the second film forming step, the ultraviolet light may be irradiated during the time when the surface of the first layer is coated with the solution.
H10K 30/40 - Dispositifs organiques sensibles au rayonnement infrarouge, à la lumière, au rayonnement électromagnétique de plus courte longueur d'onde ou au rayonnement corpusculaire comprenant une structure p-i-n, ayant p. ex. un absorbeur pérovskite entre des couches de transport de charge de type p et de type n
H10K 71/12 - Dépôt d'une matière active organique en utilisant un dépôt liquide, p. ex. revêtement par centrifugation
Provided is an optical processing device with enhanced processing efficiency. The optical processing device includes: an ultraviolet light source that irradiates ultraviolet light onto the surface of a workpiece being conveyed along a conveyance path; an optical processing chamber that can form, in an inert gas atmosphere, a space for irradiating the ultraviolet light onto the workpiece; a purge chamber that can be formed, in an inert gas atmosphere, upstream of the optical processing chamber in the conveyance path; and at least one purge gas nozzle that is located in the purge chamber and that emits an inactive gas towards the workpiece.
B29C 35/08 - Chauffage ou durcissement, p. ex. réticulation ou vulcanisation utilisant l'énergie ondulatoire ou un rayonnement corpusculaire
B01J 19/12 - Procédés utilisant l'application directe de l'énergie ondulatoire ou électrique, ou un rayonnement particulaireAppareils à cet usage utilisant des radiations électromagnétiques
B29C 59/16 - Façonnage de surface, p. ex. gaufrageAppareils à cet effet par énergie ondulatoire ou rayonnement corpusculaire
ISHIKAWA PREFECTURAL PUBLIC UNIVERSITY CORPORATION (Japon)
Inventeur(s)
Naito,keisuke
Oikawa,koji
Hironaka,mantaro
Nishijima,yu
Abrégé
Provided is a method for repelling insects. In this method, ultraviolet rays having a dominant wavelength within the wavelength range of at least 190nm to less than 240nm are irradiated on a path where insects can move within a target space, thus causing the insects to retreat from the target space toward the outside of the target space.
A01M 29/10 - Épouvantails ou dispositifs répulsifs, p. ex. pour oiseaux utilisant des moyens visuels, p. ex. épouvantails, éléments en mouvement, formes spécifiques, motifs ou éléments similaires spécifiques utilisant des sources lumineuses, p. ex. des lasers ou des lumières clignotantes
83.
STARTING MATERIAL SUPPLY DEVICE, LIGHT SOURCE APPARATUS, AND STARTING MATERIAL SUPPLY METHOD
The purpose of the present invention is to provide a starting material supply device capable of stably supplying a liquid starting material to a supply subject present in a decompression chamber without destroying a reduced-pressure atmosphere, a light source apparatus, and a starting material supply method. This starting material supply device comprises a first housing part, a supply subject, a second housing part, and a first connection passage. The first housing part is disposed in a first space having a first pressure and houses a liquid starting material at a first liquid surface height. The supply subject is disposed in a second space having a second pressure. The second housing part is disposed in the second space, houses the liquid starting material at a second liquid surface height, and has a supply port through which the liquid starting material can be supplied to the supply subject. The first connection passage connects the first housing part and the second housing part. The second liquid surface height is determined according to a pressure difference between the first pressure and the second pressure, the density of the liquid starting material, and the first liquid surface height, and switching between supply and non-supply of the liquid starting material from the supply port to the supply subject is performed according to the first liquid surface height.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
Provided are a debris trap unit and a light source device capable of improving the efficiency of maintenance of a foil trap. A debris trap unit according to one aspect of the present invention comprises a detachable member and at least one foil trap. The debris trap unit is attached to an opening of a chamber body having an emission port for radiation from plasma and the opening different from the emission port. The detachable member covers the opening and is configured to be detachable from the chamber body. The at least one foil trap has a plurality of foils that captures debris from the plasma, and is connected to the detachable member so that the plurality of foils are arranged on the path of the radiation from the plasma to the emission port when the detachable member is attached to the chamber body.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
The excimer lamp includes: a discharge container having a substantially quadrangular shape with a cross section, the discharge container having a pair of flat walls extending in a longitudinal direction and a pair of side walls connecting the flat walls; a pair of external electrodes facing each other disposed on outer surfaces of the pair of flat walls, respectively; a first internal electrode disposed inside the discharge container so as to extend toward inner surfaces of the pair of flat walls; and a second internal electrode disposed inside the discharge container at a position spaced apart from the first internal electrode in the longitudinal direction so as to extend toward the inner surfaces of the pair of flat walls. The first internal electrode and the second internal electrode are respectively disposed at positions between end parts and central parts of the external electrodes in the longitudinal direction.
H01J 65/04 - Lampes à atmosphère gazeuse portée à la luminescence par un champ électromagnétique extérieur ou par une radiation corpusculaire extérieure, p. ex. lampe indicatrice
H05B 41/38 - Commande de l'intensité de la lumière
H05B 47/16 - Commande de la source lumineuse par des moyens de minutage
The medicinal agent effect prediction system includes: a storage unit that records a learned model based on a plurality of teaching data obtained by associating input data for learning, which is based on images of neurites in culture spaces respectively growing from nerve cells cultured in a state where each of known substances is individually added to a culture solution, with output data for learning which relates to information about impaired nerve sites resulting from the known substances; a data input receiving unit that receives input of input data for assessment based on a microscope image of the neurites; and an assessment unit that outputs information derived from probability of occurrence of impairment of each nerve site belonging to the group of impaired site candidates resulting from introduction of the test substance, by applying the input data for assessment to the learned model.
C12M 3/06 - Appareillage pour la culture de tissus, de cellules humaines, animales ou végétales, ou de virus avec des moyens de filtration, d'ultrafiltration, d'osmose inverse ou de dialyse
87.
UV IRRADIATION DEVICE FOR INDUCING REGULATORY T-CELLS, AND METHOD FOR PRODUCING REGULATORY T-CELLS.
PUBLIC UNIVERSITY CORPORATION NAGOYA CITY UNIVERSITY (Japon)
USHIO DENKI KABUSHIKI KAISHA (Japon)
Inventeur(s)
Morita Akimichi
Kanayama Yoshifumi
Abrégé
The present invention provides a UV irradiation device for inducing regulatory T-cells, and a method for producing regulatory T-cells. The UV irradiation device 100 for inducing regulatory T-cells comprises a light source unit 101 for radiating light including UV light having a wavelength in the range of 240-280 nm, and a control unit 102 for controlling the illumination of the light source unit 101. In an example, the UV irradiation device 100 for inducing regulatory T-cells may be provided with a bandpass filter that selectively transmits UV light having a wavelength of 260-280 nm.
A method of producing a tin-based perovskite layer includes: preparing a first solution by dissolving a tin-based perovskite compound in a solvent that does not contain dimethyl sulfoxide (DMSO); after the preparing of the first solution, mixing the DMSO with the first solution; and applying the first solution mixed with the DMSO to a base. The mixing is performed a predetermined time before the applying of the first solution mixed with the DMSO to the base.
Provided is a light source device offering improved heat dissipation in instances where a substrate made of metal is used to supply power to a solid-state light source element from the side of the solid-state light source element opposite a mounting surface thereof. This light source device is provided with: a substrate made of metal; a first insulating layer arranged on a first principal surface of the substrate; a solid-state light source element arranged on an upper layer on a side of the first insulating layer opposite the substrate; a second insulating layer arranged in a partial region on a second principal surface of the substrate; a power-supplying unit arranged on an upper layer on a side of the second insulating layer opposite the substrate; an electroconductive layer arranged straddling a first region sandwiched between the first insulating layer and the solid-state light source element, a second region sandwiched between the second insulating layer and the power-supplying unit, and a third region creating communication between the first region and the second region by penetrating through the substrate, the first insulating layer and the second insulating layer; and a heat sink arranged, either directly or with another layer therebetween, on an upper surface of a region of the second principal surface of the substrate where the second insulating layer is not formed.
H01L 33/64 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments d'extraction de la chaleur ou de refroidissement
F21V 19/00 - Montage des sources lumineuses ou des supports de sources lumineuses sur ou dans les dispositifs d'éclairage
F21V 29/503 - Dispositions de refroidissement caractérisées par l’adaptation au refroidissement de composants spécifiques de sources lumineuses
F21V 29/76 - Dispositions de refroidissement caractérisées par des éléments passifs de dissipation de chaleur, p. ex. puits thermiques avec ailettes ou lames avec ailettes ou lames en plans parallèles essentiellement identiques, p. ex. avec une section en forme de peigne
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
This product inspection system comprises: a spectral measurement unit that measures the spectrum of a conveyed product; and a quality determination unit 44 that determines the quality of the product on the basis of the output obtained by inputting product spectral data measured by the spectral measurement unit into a trained model generated by machine learning. The trained model is generated by machine learning using training data including spectral data measured in mutually different positions.
G01N 21/88 - Recherche de la présence de criques, de défauts ou de souillures
G01N 21/85 - Analyse des fluides ou solides granulés en mouvement
G01N 21/3563 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge pour l'analyse de solidesPréparation des échantillons à cet effet
Provided is a light heating device that increases the efficiency of utilization of light emitted from a heating light source. The present invention comprises: a chamber which accommodates a heating target; a light source unit which emits heating light toward the heating target and which is disposed outside of the chamber; and a light transmitting part which is for allowing heating light that has been emitted from the light source unit to enter the inside of the chamber. The light source unit is provided with a heating light source that emits the heating light, a reflection member that reflects, toward the heating target, some of the heating light which is emitted from the heating light source and which progresses in in a direction differing from that of the heating target, and a condensing optical system that decreases the angle of divergence, with respect to the direction in which the heating light source and chamber face each other, of the heating light that has been emitted from the heating light source and toward the heating target.
Disclosed herein is a method of manufacturing an electrode for a rechargeable battery. The method comprises: a preparation process for preparing a workpiece on which a slurry containing a negative electrode active material is applied to at least one surface of a negative electrode current collector; and a drying process for heating and drying the slurry by irradiating a side of the slurry of the workpiece with light having a wavelength range in which light absorption in the slurry is equal to or greater than 60%.
The infrared LED element includes a first LED laminate including a first cladding layer of a first conductivity type, a first light-emitting layer, and a second cladding layer of a second conductivity type; a laminate for tunnel junction disposed directly or indirectly on top of the first LED laminate; and a second LED laminate disposed directly or indirectly on top of the laminate for tunnel junction and including a third cladding layer of a first conductivity type, a second light-emitting layer, and a fourth cladding layer of a second conductivity type. The laminate for tunnel junction includes a first tunnel layer containing a second conductivity-type dopant at a higher concentration than the second cladding layer; and a second tunnel layer containing a first conductivity-type dopant at a higher concentration than the third cladding layer and forming a tunnel junction with the first tunnel layer.
H01L 33/04 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure à effet quantique ou un superréseau, p.ex. jonction tunnel
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
An ultraviolet light emission device includes: an excimer lamp having an elongated shape and having a light emission surface that emits ultraviolet light toward an object for irradiation; a light intensity sensor that is disposed around the excimer lamp and detects ultraviolet light; and a first reflection member disposed around the excimer lamp and facing a part of the light emission surface in a longitudinal direction, wherein ultraviolet light emitted from the light emission surface is reflected by the first reflection member and enters the light intensity sensor.
A61L 2/10 - Procédés ou appareils de désinfection ou de stérilisation de matériaux ou d'objets autres que les denrées alimentaires ou les lentilles de contactAccessoires à cet effet utilisant des phénomènes physiques des radiations des ultraviolets
An ultraviolet therapy apparatus is provided and includes a light source unit that emits ultraviolet light, the light source unit comprising at least one LED, the LED being configured to, in a case in which an integral intensity of an emission spectrum in a wavelength range of 250 nm to 400 nm is 1, have a ratio of an integral intensity in wavelengths of 250 nm to 298 nm to an integral intensity in the wavelength range is less than or equal to 0.088, and emit an emission spectrum such that a ratio of an integral intensity of wavelengths of 308 nm to 313 nm to an integral intensity of wavelengths of 250 nm to 298 nm is greater than or equal to 5.2.
Provided is an easily executable method for inhibiting the growth of algae or microorganisms. Furthermore, the purpose of the present invention is to provide: a UV irradiation device capable of easily inhibiting the growth of algae or the like; and an illumination device that illuminates a surrounding area and is capable of easily inhibiting the growth of algae or the like. The growth inhibition method according to the present invention is characterized by irradiating an inhabiting area where algae or photosynthetic microorganisms are inhabiting with ultraviolet light having a wavelength in the range of 200-230 nm.
C02F 1/32 - Traitement de l'eau, des eaux résiduaires ou des eaux d'égout par irradiation par la lumière ultraviolette
A01K 63/04 - Agencements pour traiter l'eau spécialement conçus pour les récipients pour poissons vivants
A61L 2/10 - Procédés ou appareils de désinfection ou de stérilisation de matériaux ou d'objets autres que les denrées alimentaires ou les lentilles de contactAccessoires à cet effet utilisant des phénomènes physiques des radiations des ultraviolets
A61L 2/24 - Appareils utilisant des opérations programmées ou automatiques
F21S 8/08 - Dispositifs d'éclairage destinés à des installations fixes avec un support
A detection apparatus includes: an alignment microscope that captures an image of a mask mark and an image of a workpiece mark; and a position detector that detects a position of the mask mark and a position of the workpiece mark on the basis of those images. The alignment microscope includes an imaging unit, a beam splitter that splits each of the first light and the second light, and one or more aberration correction lenses. The beam splitter includes first and second members connected to each other with a light-splitting surface being sandwiched therebetween. All of first and second incident surfaces and emission surfaces are configured to have different surface directions with respect to the light-splitting surface. The one or more aberration correction lenses includes a first aberration correction lens disposed in a first optical path and a second aberration correction lens disposed in a second optical path.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
In a nitride semiconductor laser element, a first epilayer including an active layer, a current confinement layer having an opening portion, and a second epilayer are formed on a semiconductor substrate. The first epilayer has an impurity concentration maximum portion where a concentration distribution of an impurity in a depth direction shows a local maximum near an interface with the current confinement layer.
H01S 5/22 - Structure ou forme du corps semi-conducteur pour guider l'onde optique ayant une structure à nervures ou à bandes
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
A light source device includes: a lighting circuit that includes a direct-current power source, a transformer, and a switching element, and generates electromotive force in a secondary winding of the transformer in accordance with switching of an ON state and an OFF state of the switching element; a dielectric barrier discharge lamp that is connected to the secondary winding of the transformer, and a controller that performs ON/OFF control on the switching element. The controller performs: a starting mode for repeating ON/OFF control on the switching element at a predetermined frequency at a time of starting; and a steady-state operation mode for alternately performing first control and second control after the dielectric barrier discharge lamp has been started, the first control being performed to repeat ON/OFF control on the switching element at the predetermined frequency, the second control being performed to maintain the switching element in the OFF state.
H05B 41/282 - Circuits dans lesquels la lampe est alimentée par une puissance obtenue à partir de courant continu au moyen d'un convertisseur, p. ex. par courant continu à haute tension utilisant des convertisseurs statiques comportant des dispositifs à semi-conducteurs
H05B 47/16 - Commande de la source lumineuse par des moyens de minutage
100.
ANTIBACTERIAL COMPOSITION PRODUCTION METHOD, ANTIBACTERIAL COMPOSITION, ANTIBACTERIAL METHOD, ANTIBACTERIAL AGENT, COSMETIC, AND DERMATOLOGICAL TOPICAL AGENT
Provided are an antibacterial composition, an antibacterial method, an antibacterial agent, a cosmetic, and a dermatological topical agent, that can selectively inhibit Staphylococcus aureus as compared with Staphylococcus epidermidis. Provided are an antibacterial composition production method including a step of producing a free fatty acid group by simple lipid and Staphylococcus epidermidis, an antibacterial composition obtained by the production method, an antibacterial composition containing a free fatty acid group derived from Staphylococcus epidermidis, an antibacterial method including a step of inhibiting Staphylococcus aureus by the antibacterial composition, an antibacterial agent containing the antibacterial composition, a cosmetic containing the antibacterial composition, and a dermatological topical agent containing the antibacterial composition.
A01N 37/02 - Acides carboxyliques saturés ou leurs thio-analoguesLeurs dérivés
A01N 63/20 - BactériesSubstances produites par des bactéries ou obtenues à partir de celles-ci
A01P 1/00 - DésinfectantsComposés antimicrobiens ou leurs mélanges
A61K 8/36 - Acides carboxyliquesLeurs sels ou anhydrides
A61K 8/92 - Huiles, graisses ou ciresLeurs dérivés, p. ex. produits d'hydrogénation
A61K 8/99 - Cosmétiques ou préparations similaires pour la toilette caractérisés par la composition contenant des produits de constitution indéterminée ou leurs dérivés à base de micro-organismes autres que des algues ou des champignons, p. ex. à base de protozoaires ou de bactéries
A61Q 19/00 - Préparations pour les soins de la peau
