Abrégé

The analog-to-digital converter includes a first stage in which a voltage to be converted is applied to the input of a first comparator. The first comparator delivers, on a first digital output, a first digital result representative of the comparison between the voltage to be converted and the comparison voltage. The first digital output is connected to a calculator of a first intermediate voltage. A second comparator compares the first intermediate voltage with the comparison voltage and delivers a second digital result on a second digital output terminal. The second digital output terminal is connected to a second calculator of residual voltage that is a function of the voltage to be converted, of first and second voltages and of the first and second digital results. The first calculator is formed by the second calculator.

Classes IPC  ?

• H03M 1/38 - Valeur analogique comparée à des valeurs de référence uniquement séquentiellement, p. ex. du type à approximations successives
• H03M 1/16 - Conversion par étapes, avec pour chaque étape la mise en jeu de moyens de conversion identiques ou différents et délivrant plus d'un bit avec modification de l'échelle, c.-à-d. en changeant l'amplification entre les étapes

Abrégé

The photodetector includes a photon absorbing region formed by a first semiconductor material having a first bandgap energy value. It also includes a blocking region formed by at least second and third semiconductor materials configured to prevent the majority charge carriers from passing between the photon absorbing region and a contact region, the second semiconductor material presenting a second bandgap energy value higher than the first bandgap energy value to form a quantum well with the third semiconductor material. The blocking region is doped.

Classes IPC  ?

• H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
• H01L 31/101 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet
• H01L 31/103 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel étant du type PN à homojonction

Abrégé

The detection device comprises first and second photodetectors (1a, 1b) each sensitive to two different wavelength ranges. The detection device comprises a first filter (4a) configured to allow the passage of the first wavelength range and to block the second wavelength range. The first filter covers the first photodetector (1a) and leaves the second photodetector (1b) uncovered. The detection device comprises a second filter (4b) arranged spaced apart from the first and second photodetectors (1a, 1b) and spaced apart from the first filter (4a). The second filter (4b) is configured to allow the passage of the first and second wavelength ranges. A processing circuit (5) is configured to receive electrical signals coming from the first and second photodetectors (1a, 1b) and to provide a piece of information relating to the radiation of the second range of wavelengths by comparing the first signal with the second signal (7a).

Classes IPC  ?

• H01L 27/146 - Structures de capteurs d'images

Abrégé

The detection circuit comprises a detector connected to an integration node. A bias circuit biases the detector between a first bias state and a second floating state. The potential of the integration node is at a target value when the bias circuit biases the detector to the first state and varies when the detector is in floating state. A measurement circuit without charge losses delivers a value representative of the potential present on the integration node N. A transfer circuit of the electric charges performs transfer of the electric charges from a stray capacitor of the photodiode to an integration capacitor. An output terminal delivers a voltage representative of the potential present on the second terminal of the first capacitor.

Classes IPC  ?

• G01J 1/46 - Circuits électriques utilisant une capacité
• H04N 5/33 - Transformation des rayonnements infrarouges
• H04N 5/361 - Traitement du bruit, p.ex. détection, correction, réduction ou élimination du bruit appliqué au courant d'obscurité
• H04N 5/363 - Traitement du bruit, p.ex. détection, correction, réduction ou élimination du bruit appliqué au bruit de réinitialisation, p.ex. bruit de type KTC
• H04N 5/3745 - Capteurs adressés, p.ex. capteurs MOS ou CMOS ayant des composants supplémentaires incorporés au sein d'un pixel ou connectés à un groupe de pixels au sein d'une matrice de capteurs, p.ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs
• G01J 5/22 - Leurs particularités électriques

Abrégé

initiate or terminate a data acquisition phase when the number of occurrences of trailing edges is equal to a threshold value recorded in a register of the first synchronisation circuit.

Classes IPC  ?

• G01J 3/36 - Étude de plusieurs bandes d’un spectre à l’aide de détecteurs distincts
• G01J 1/44 - Circuits électriques
• G01J 1/46 - Circuits électriques utilisant une capacité
• G01J 3/427 - Spectrométrie à double longueur d'onde
• G01J 3/28 - Étude du spectre
• G01J 3/50 - Mesure de couleurDispositifs de mesure de couleur, p. ex. colorimètres en utilisant des détecteurs électriques de radiations
• H04N 5/235 - Circuits pour la compensation des variations de la luminance de l'objet

Abrégé

The invention relates to a cold-generating device that uses the “Joule-Thomson” expansion principle. It comprises a heat exchanger inside which a high-pressure and a low-pressure fluid circulate in countercurrent. The heat exchanger consists of a stack of pellets (5) made of a porous material, particularly sintered material, forming a cylindrical mandrel at the periphery of which, and in contact with which, a capillary (10) is wound inside which the high-pressure fluid circulates, wherein the low-pressure fluid circulates in countercurrent inside the porous mandrel formed in this way.

Classes IPC  ?

• F25B 41/06 - Etrangleurs d'écoulement, p.ex. tubes capillaires; Dispositions de ceux-ci
• F25B 9/02 - Machines, installations ou systèmes à compression dans lesquels le fluide frigorigène est l'air ou un autre gaz à point d'ébullition peu élevé utilisant l'effet Joule-ThompsonMachines, installations ou systèmes à compression dans lesquels le fluide frigorigène est l'air ou un autre gaz à point d'ébullition peu élevé utilisant l'effet vortex
• F28F 13/00 - Dispositions pour modifier le transfert de chaleur, p. ex. accroissement, diminution
• F28D 7/02 - Appareils échangeurs de chaleur comportant des ensembles de canalisations tubulaires fixes pour les deux sources de potentiel calorifique, ces sources étant en contact chacune avec un côté de la paroi d'une canalisation les canalisations étant enroulées en hélice
• F28D 7/04 - Appareils échangeurs de chaleur comportant des ensembles de canalisations tubulaires fixes pour les deux sources de potentiel calorifique, ces sources étant en contact chacune avec un côté de la paroi d'une canalisation les canalisations étant enroulées en spirale

Abrégé

The invention relates to an analog-to-digital converter which includes a first stage in which a voltage to be converted (Vin) is applied to the input of a first comparator (2). The first comparator (2) outputs, via a first digital output, a first digital result (Bi) which represents the comparison between the voltage to be converted (Vin) and the comparison voltage (Vref). The first digital output is connected to a calculator (3) of a first intermediate voltage (V1). A second comparator (5) compares the first intermediate voltage (V1) with the comparison voltage (Vref) and outputs a second digital result (Bi+1) via a second digital output terminal. The second digital output terminal is connected to a second calculator of a residual voltage that is a function of the voltage to be converted (Vin), of first (Va) and second (Vb) voltages and of the first and second digital results (Bi, Bi+1). The first calculator is formed by the second calculator.

Classes IPC  ?

• H03M 1/16 - Conversion par étapes, avec pour chaque étape la mise en jeu de moyens de conversion identiques ou différents et délivrant plus d'un bit avec modification de l'échelle, c.-à-d. en changeant l'amplification entre les étapes

Abrégé

The invention relates to a photodetector which includes an absorbing area (1) made up of a first semiconductor material having a first band gap energy value. It also includes a blocking area (3e, 3c) made up of at least second and third semiconductor materials configured to prevent the passage of the majority charge carriers between the absorbing area (1) and a contact area (2e, 2c), the second semiconductor material having a second band gap energy value higher than the first band gap energy value in order to form a quantum well with the third semiconductor material. The blocking area (3e, 3c) is doped.

Classes IPC  ?

• H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
• H01L 31/101 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet

Abrégé

A method of positioning elements or additional technological levels on the incident surface of an infrared detector of hybridized type, said detector being formed of a detection circuit comprising an array network of photosensitive sites for the wavelength ranges of interest, hybridized on a read circuit, said detection circuit resulting from the epitaxial growth of a detection material on a substrate, comprising forming within the detection circuit indexing patterns by marking of the growth substrate.

Classes IPC  ?

• H01L 23/544 - Marques appliquées sur le dispositif semi-conducteur, p. ex. marques de repérage, schémas de test
• H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
• H01L 21/08 - Préparation de la plaque de support
• H01L 21/10 - Traitement préliminaire du sélénium ou du tellure, application sur la plaque de support, ou traitement subséquent de l'ensemble
• H01L 27/146 - Structures de capteurs d'images
• C30B 9/12 - Solvants formés de sels, p. ex. croissance dans un fondant
• C30B 25/18 - Croissance d'une couche épitaxiale caractérisée par le substrat

Abrégé

The invention relates to a light-ray detection circuit comprises a light detector (1). The light detector (1) is coupled to three capacitors (C1, C2, C3) by means of three switches. The capacitors (C1, C2, C3) are mounted in parallel such as to form a capacitive load (4), the electrical capacitance value of which varies depending on whether the switches are on or off. Said configuration makes it possible to stabilize the voltage present on the output terminal (S) of the detection circuit, thus subjecting the light detector to a wider range of illumination.

Classes IPC  ?

• G01J 1/46 - Circuits électriques utilisant une capacité

Abrégé

A device for detecting infrared radiation comprises a circuit (1) for detecting infrared radiation equipped with at least one photodetector. A read circuit (2) is electrically connected to the detecting circuit (1) and it is configured to process the signal emitted by the detecting circuit (1). A Joule-Thomson cooler cools a cold plate (3) thermally and mechanically connected to the detecting circuit (1) and to the read circuit (2). The cold plate (3) comprises an internal cavity (7) supplied with a gas mixture. An orifice (5) for expanding the gas mixture is placed at an inlet of the internal cavity (7). An outlet of a compressor (6) supplies the expansion orifice (5) with a gas mixture. The inlet of the compressor (6) receives the expanded gas mixture coming from an outlet of the internal cavity (7).

Classes IPC  ?

• G01J 5/06 - Dispositions pour éliminer les effets des radiations perturbatricesDispositions pour compenser les changements de la sensibilité
• F25B 9/02 - Machines, installations ou systèmes à compression dans lesquels le fluide frigorigène est l'air ou un autre gaz à point d'ébullition peu élevé utilisant l'effet Joule-ThompsonMachines, installations ou systèmes à compression dans lesquels le fluide frigorigène est l'air ou un autre gaz à point d'ébullition peu élevé utilisant l'effet vortex
• F25D 19/00 - Disposition ou montage des groupes frigorifiques dans les dispositifs

Abrégé

The invention relates to a flexible printed circuit with low emissivity which includes first and second ends (48a, 48b) and a flexible central portion (50) extending between the first and second ends and comprising electrically conductive tracks (52) embedded in a polymer material in order electrically to connect the first and second ends. The flexible central portion is at least partially covered with a heat shield (54) made of a material having lower emissivity than that of the polymer material and the electric conductors.

Classes IPC  ?

• G01J 5/06 - Dispositions pour éliminer les effets des radiations perturbatricesDispositions pour compenser les changements de la sensibilité
• H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés

Abrégé

A circuit for detecting electromagnetic radiation comprises a photodetector (1) transforming the electromagnetic radiation received into an electric current. A reading circuit (2) is coupled to a first terminal of the photodetector (1) and configured to transform a signal in terms of current into a signal in terms of voltage (VS). A capacitor (3) has a first terminal coupled electrically to the first terminal of the photodetector (1) and a second terminal coupled electrically to the reading circuit (2). A resistor (R) has a first terminal coupled electrically to the capacitor (3) and to a first terminal of the photodetector (1). A polarisation circuit (4) is coupled electrically to a second terminal of the resistor (R) and configured to polarise the photodetector (1) during a first period of time by way of the resistor.

Classes IPC  ?

• G01J 1/46 - Circuits électriques utilisant une capacité

Abrégé

According to the invention, the substrate (3) sequentially comprises a first semiconductor layer (5) having a first band gap energy, a buffer semiconductor layer (6) a second semiconductor layer (7) having a second band gap energy different from the first band gap energy. Two photo-detectors (1, 2) sensitive to two different colors are respectively formed by means of the first and second semiconductor layers (5, 7). The first semiconductor layer (5) comprises two main opposite surfaces. The first main surface is covered by the second semiconductor layer (7). The second main surface is covered or not by a passivation film (4) having a thickness equal to or lower than 3 μm.

Classes IPC  ?

• H01L 31/101 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet
• H01L 31/103 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel étant du type PN à homojonction

Abrégé

The detection device comprises a read circuit (2) formed in a first semiconductor substrate. A detection circuit (1) is associated with the read circuit (2). A cold screen (4) is securely fastened to the detection circuit (1) and the read circuit (2). The cold screen (4) is electrically conductive and is fixed to the first substrate so as to define a closed space containing the detection circuit (1).

Classes IPC  ?

• H01L 31/024 - Dispositions pour le refroidissement, le chauffage, la ventilation ou la compensation de température
• G01J 5/06 - Dispositions pour éliminer les effets des radiations perturbatricesDispositions pour compenser les changements de la sensibilité

Abrégé

A pixel matrix is organized in rows of pixels (L). Each pixel is either in a first state or in a second state. The matrix contains, in the main, pixels in the second state. Each row (L) of pixels is tested so as to determine whether or not it contains a pixel in a first state. The result of this test for each row is written to a receiver (3). The rows (L) possessing at least one pixel in the first state are analyzed more finely so as to determine the position of this or of these pixels in the row (L).

Classes IPC  ?

• G06T 1/20 - Architectures de processeursConfiguration de processeurs p. ex. configuration en pipeline

Abrégé

According to the invention, an array of photodetectors (1) is organized along a first organizational axis on a semiconductor substrate having a first type of conductivity. Each phodetector (1) is at least partially formed in the substrate that forms a first electrode of the photodetector. A peripheral polarization ring (2) is formed around the array of photodetectors (1). The polarization ring (2) is connected to a generator (3) of polarization voltage (VSUB) and to the substrate. A reading circuit is connected to a photodetector (1) via the second terminal of the photodetector (1). An element (7) that is opaque to incident radiation is placed opposite a photodetector (1) so as to cover said photodetector and intercept said radiation. A circuit for storing the signal transmitted by the reading circuit associated with the photodetector (1) covered by the opaque element (7) is also provided.

Classes IPC  ?

• H01L 27/146 - Structures de capteurs d'images

Abrégé

A circuit for detecting electromagnetic radiation comprises a photodetector (1), which transforms the received electromagnetic radiation into an electric current. A bias circuit (6) is connected to the photodetector (1). An amplification circuit (8) has an input terminal coupled to the photodetector (1). An amplifying transistor (T3) has a first low impedance electrode forming the input terminal of the amplification circuit (8) and a second low impedance electrode coupled to an output terminal of the detection circuit. The transistor (T3) is configured in such a way as to be traversed by the current applied to the first electrode. A high impedance electric charge (12) is connected to the second electrode to supply a voltage representative of the electric current coming from the photodetector (1).

Classes IPC  ?

• G01S 3/784 - Systèmes pour déterminer une direction ou une déviation par rapport à une direction prédéterminée utilisant la comparaison d'amplitude de signaux provenant de détecteurs ou de systèmes de détecteurs statiques utilisant une mosaïque de détecteurs
• H04N 5/33 - Transformation des rayonnements infrarouges
• H01L 27/146 - Structures de capteurs d'images

Abrégé

The invention relates to a photodetector array (1), which is organized along a first organizational axis on a semiconductor substrate (6) of a first conductivity type. Each photodetector (1) is at least partially created in the substrate (6) forming a first photodetector electrode. A peripheral polarization ring is formed around the photodetector array (1). The polarization ring (2) is connected to a polarization voltage generator (3) and to the substrate (6). A read circuit is connected to a photodetector by means of the second terminal of the photodetector. A first switch connects the photodetector (1) to a generator (9) of additional voltage (VW). A second switch connects the photodetector (1) to the associated read circuit. The first and second switches (7, 8) are in opposite states.

Classes IPC  ?

• H01L 27/146 - Structures de capteurs d'images

Abrégé

The invention relates to a detection circuit comprising a switch (4) connecting a photodiode (1) and an integrator (3). Said detection circuit additionally comprises means (6) for alternately switching the polarisation conditions of the photodiode (1) between inverse polarisation and another state. The electronic traps present in the photodiode (1) are passivated regularly during the other state.

Classes IPC  ?

• G01J 1/44 - Circuits électriques

Abrégé

xTe obtained by liquid or vapor phase epitaxy or by molecular beam epitaxy, said detection circuit being hybridized on a read circuit. The method includes submitting the growth substrate to a mechanical or chem.-mech. polishing step or to a chemical etch step to decrease its thickness, all the way to an interface area between the material of the detection circuit and the growth substrate; and submitting the interface thus obtained to an iodine treatment.

Classes IPC  ?

• H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
• H01L 27/146 - Structures de capteurs d'images
• H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
• H01L 31/0296 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIBVI, p.ex. CdS, ZnS, HgCdTe

Abrégé

An infrared radiation detector includes: a cryostat having a cold finger ensuring heat exchange with a cold source and a window transparent to infrared radiation to be detected; a mechanically fixed cold plane in heat exchange with the cold finger; a detector unit comprising at least a detector circuit sensitive to the infrared wavelength range to be detected, and in direct or indirect heat exchange with the cold plane; and a mechanically fixed cold shield in heat exchange with the cold plane and limiting stray radiation. The cold shield is rotationally symmetrical. An inside wall of the cold shield has a succession of reliefs distributed in at least one helical pattern. A definition axis of the helical pattern coincides with the axis of revolution of the cold shield.

Classes IPC  ?

• G01J 5/06 - Dispositions pour éliminer les effets des radiations perturbatricesDispositions pour compenser les changements de la sensibilité

Abrégé

A method of reading electrical charges produced by a photo-detector of a photo-detector matrix includes collecting and storing electrical charges produced by the photo-detector in a first capacitive element, transferring the charges stored in the first capacitive element to a second capacitive element, and reading the voltage at the terminals of the second capacitive element. The transfer followed by the reading is carried out in at least two phases: at least one first phase taking place during the collection and storage of the charges in the first capacitive element, and a second phase taking place at the end of the collection and storage of the electrical charges in the first capacitive element.

Classes IPC  ?

• H04N 5/335 - Transformation d'informations lumineuses ou analogues en informations électriques utilisant des capteurs d'images à l'état solide [capteurs SSIS] 

Abrégé

A device for reading electric currents including a capacitive element to integrate the current, the terminals of the capacitive element being connected to the mass and to an output branch of the device respectively, and a differential pair including: a first transistor mounted between the input branch of the input stage and the capacitive element, the transistor being controlled by a polarized impulse voltage, capable of putting the first transistor alternately into the off state and then into the on state; and a second transistor mounted between the input branch of the input stage and a potential other than that of the capacitive element, said transistor also being controlled by a polarized impulse voltage, capable of putting the second transistor alternately into the off state and then into the on state, wherein the second transistor is mounted in phase opposition relative to the first transistor.

Classes IPC  ?

• G01R 1/00 - Détails ou dispositions des appareils des types couverts par les groupes ou

Produits et services

Electronic apparatus, devices and units, namely electronic components, coolers integrated in optical and electronic apparatus, electronic integrated circuits, microprocessors, electronic cards integrated in optical apparatus, connectors; optical and optoelecronic apparatus, optical and optoelectronic devices and units namely optical and optoelectronic instruments, photodetectors, optical detectors, photovoltaic detectors; components namely semiconductor components, detectors namely infrared detectors.

Produits et services

Electronic apparatus, devices and units, namely, electronic components in the nature of infrared detectors for use in further manufacture; electronic integrated circuits for use in the manufacture of infrared detectors; electronic integrated circuit modules for use with infrared detectors; microprocessors; electronic circuit cards integrated in optical apparatus with electrical connectors; optoelectronic apparatus in the nature of optical communications instruments and components, namely, optical transmitters, receivers, and transceivers; optical and optoelectronic devices and units, namely, electronic filters for optical and infrared detectors; photodetectors, optical detectors, and photovoltaic detectors, all for use in infrared detecting systems for military, law enforcement, civil, scientific and industrial applications; semiconductor components, namely, semiconductor chips and semiconductor wafers; detectors, namely, infrared detectors for observing and measuring the infrared spectrum, for use in military, law enforcement, civil, scientific and industrial applications

Produits et services

Appareils, dispositifs et organes électriques, optiques, opto-électroniques; composants, notamment composants semi-conducteurs et composants infrarouges; détecteurs, notamment détecteurs infrarouges.