A sintering press for producing a sintered connection between a first connection partner and a second connection partner disposed thereabove, having a suction-fixing installation for fixing the first connection partner, having a compression piece which is disposed above the suction-fixing installation. The sintering press for producing the sintered connection is configured for converging the compression piece and the suction-fixing installation relative to one another and for mutually compressing the first connection partner and the second connection partner, wherein the suction-fixing installation on the side thereof that faces the compression piece has first suction openings, wherein the suction-fixing installation, when the first connection partner is disposed above the first suction openings, by generating a negative pressure at the first suction openings, is configured for suctioning the first connection partner and, on account thereof, for fixing the latter in relation to the suction-fixing installation. The invention furthermore relates to a pressure sintering method for producing a sintered connection by the sintering press.
B22F 7/06 - Fabrication de couches composites, de pièces ou d'objets à base de poudres métalliques, par frittage avec ou sans compactage de pièces ou objets composés de parties différentes, p. ex. pour former des outils à embouts rapportés
B22F 7/08 - Fabrication de couches composites, de pièces ou d'objets à base de poudres métalliques, par frittage avec ou sans compactage de pièces ou objets composés de parties différentes, p. ex. pour former des outils à embouts rapportés avec une ou plusieurs parties non faites à partir de poudre
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
2.
Power electronic assembly with a housing and with a capacitor device arranged therein
A power electronic assembly with a housing and a capacitor device therein. The capacitor device has capacitor elements, each with a first and a second capacitor contact device, and a capacitor busbar having a first metal shaped body with a first contact point and a second metal shaped body with a second contact point. The first metal shaped body of first polarity has a plurality of first terminal contact devices each connected to a first capacitor contact device and the second metal shaped body of second polarity has a plurality of second terminal contact devices each connected to a second capacitor contact device. The individual current paths each formed from a first partial current path between the first contact point and a first terminal contact device and a second partial current path between the second terminal contact device associated with the first and the second contact point each have the same current path length.
A power semiconductor module has a substrate arrangement which has a substrate, wherein the respective substrate has conductor tracks, power semiconductor components arranged on the substrate conductor tracks and electrically conductively contacted therewith, a foil stack arrangement which has at least one foil stack, and the foil stack comprises foil stack conductor tracks. The power semiconductor components are electrically conductively connected to by the substrate conductor tracks and the foil stack conductor tracks to form a circuit, and having an electrically conductive bridging element which has first and second contact sections extending from the foil stack arrangement and a connecting section which connects the first and second contact sections, the first contact section is electrically conductively contacted with a first substrate conductor track or with a foil stack conductor track, and the second contact section is electrically conductively contacted with a second substrate conductor track or with a foil stack conductor track, the bridging element is electrically connected in parallel with at least one section of a foil stack conductor track of the foil stack.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
4.
Arrangement having a housing and an electrically conductive contact spring, and power semiconductor module having said arrangement
An arrangement having a housing and an electrically conductive contact spring is presented, wherein the contact spring has a first and a second orthogonal main plane along its specified spring direction, wherein it is formed so as to be symmetric with respect to the first main plane, x-z plane, and asymmetric with respect to the second main plane, x-y plane, and also with respect to a rotation through 180° about the specified spring direction. The housing has a spring shaft for receiving the contact spring, and wherein this spring shaft likewise has a first and a second main plane, which coincides with the respective main plane of the contact spring, and wherein the spring shaft is formed so as to be symmetric relative to both main planes. And a power semiconductor module having such an arrangement.
A method and a device for pressure sintering connection of a joining group composed of a first and a second joining partner by means of a device with a lower tool and an upper tool having the steps: providing the joining group at room temperature as an initial temperature, arranging the joining group between the supporting surface and the pressure surface, wherein the joining group has no direct thermal contact with the supporting surface and no direct thermal contact with the pressure surface, introducing pressure onto the joining group, wherein at the start of the introduction of pressure the starting temperature of the joining group is no more than 100K above an initial temperature; increasing the temperature of the sintering agent by at least 50K above the starting temperature; ending the introduction of pressure.
B23K 20/02 - Soudage non électrique par percussion ou par une autre forme de pression, avec ou sans chauffage, p. ex. revêtement ou placage au moyen d'une presse
B22F 7/06 - Fabrication de couches composites, de pièces ou d'objets à base de poudres métalliques, par frittage avec ou sans compactage de pièces ou objets composés de parties différentes, p. ex. pour former des outils à embouts rapportés
6.
Module having a moulded plastic body and a multiplicity of load terminal elements and power semiconductor device therewith
A module and a power semiconductor device wherein a module is configured with a molded plastic body and load terminal elements of the power semiconductor device, wherein respective load terminal elements are configured as a flat shaped metal body having a first main face and an opposite second main face, and having a first secondary face and an opposite second secondary face. The secondary faces connect the main faces, and have a terminal section, wherein the molded plastic body forms channels and comprises a bottom body part, a first and a second edge body and a partition body. The load terminal elements are arranged with a section in an associated channel, and an edge body of the channel has an indentation directed towards the one main face of the directly neighboring terminal element.
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
H05K 7/20 - Modifications en vue de faciliter la réfrigération, l'aération ou le chauffage
H01L 23/04 - ConteneursScellements caractérisés par la forme
An electronic circuit includes a circuit carrier (1), a metal layer (9) and an electrically insulating base layer (2) on the metal layer (9). Conductor tracks (3) are on the base layer (2) and electronic components (4) are arranged on the conductor tracks (3). The conductor tracks (3) and the electronic components (4) are covered using a potting compound (10). A separating layer (11) is arranged between the base layer (2) and the potting compound (10) at least in the areas between the conductor tracks (3). The separating layer (11) consists of an electrically insulating material, which is different from both the material of the base layer (2) and the material of the potting compound (10).
A circuit arrangement and a step-down converter have a first and a second input connection, with a first, upper and a second, lower step-down converter element. The first step-down converter element has a first input capacitor, the first capacitor connection of which is connected to the first input connection and the second capacitor connection of which is connected to the second output connection. A first series connection has a first switch and a first diode in parallel with the first input capacitor, and a first coil input of a first coil is connected to the center tap between the first switch and the first diode, the first coil output of said first coil being connected to the first output connection, and wherein the second step-down converter element has a second input capacitor.
H02M 3/07 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des résistances ou des capacités, p. ex. diviseur de tension utilisant des capacités chargées et déchargées alternativement par des dispositifs à semi-conducteurs avec électrode de commande
C25B 9/65 - Dispositifs pour l'alimentation en courantConnexions d'électrodesConnexions électriques intercellulaires
9.
Inverter unit with detection of voltage drops on semiconductor switches
Load bridges (2) of an inverter unit (1) include load branches having semiconductor switches (4, 5, 15, 16), that have a node point (6) which is connected to a load (7) and to two different potentials (P1, P2). Node points (6) are connected via a first resistance circuit (8) to potential (P1). Node points (6) are further connected via second resistance circuits (9) to tap-off points (11). The tap-off points (11) are connected via third resistance circuits (10) to the other potential (P2). At each of the tap-off points (11), a potential (U1, U2, U3) is tapped-off and is fed to a monitoring device (12). The monitoring device (12) determines the difference (U1′) between the tapped-off potentials and the second potential (P2). The control device (3) considers the signals (M1, M2, M3) for the actuation of the load bridges (2).
H02M 7/5387 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs, p. ex. onduleurs à impulsions à un seul commutateur dans une configuration en pont
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
An electronic power converter is in a housing of a power converter arrangement. A cooling duct for cooling the power converter with a cooling liquid is inside the housing. The cooling duct has a connection supplying the cooling liquid to the cooling duct and for discharging. Mating connections are connected to the connections of the cooling duct. The connections and the mating connections have sealing surfaces which face each other. The interior of the housing and the cooling duct is sealed via sealing devices each have two sealing rings spaced apart from each other. First sealing rings seal the cooling duct and the other sealing rings seal the housing. Annular grooves as outflow ducts in the housing lead off and open out on the outside of the housing and are introduced into the sealing surfaces in the region between the sealing rings.
A power electronics system has a housing, a cooling device, a power semiconductor module and a capacitor device. The cooling device has a first and a second main surface. The power semiconductor module is arranged on the first main surface and is in thermally conducting contact with the cooling device and the capacitor device is arranged on the second main surface and is in thermally conducting contact with the cooling device. At least one DC connection device is connected to a DC module connection of the power semiconductor module and has a first cooling section, which is in thermally conducting contact with the cooling device.
A method for manufacturing a power semiconductor module and a power semiconductor module having, in each case, a housing, a switchgear arranged in this housing and having a plurality of connection elements, has the following method steps: A) forming a housing with pre-fixed connection elements; B) arranging the switchgear in the housing and connecting the connection elements to connection surfaces of a substrate of the switchgear; C) arranging a positioning device for fixing the position of the connection elements with respect to one another; D) fixing the connection elements relative to one another and to the housing.
H01L 21/50 - Assemblage de dispositifs à semi-conducteurs en utilisant des procédés ou des appareils non couverts par l'un uniquement des groupes ou
H01L 23/10 - ConteneursScellements caractérisés par le matériau ou par la disposition des scellements entre les parties, p. ex. entre le couvercle et la base ou entre les connexions et les parois du conteneur
H01L 23/053 - ConteneursScellements caractérisés par la forme le conteneur étant une structure creuse ayant une base isolante qui sert de support pour le corps semi-conducteur
13.
Method for producing a film composite, film composite and power electronic switching device comprising the latter
A method for producing a film composite for electrical connection inside a power electronic switching device has the steps: A) forming a film composite having an electrically insulating insulant film with a first and a second main face. A first electrically conductive metal film, forms conductor tracks insulated from one another on the first main face, and having a second electrically conductive metal film forming conductor tracks arranged insulated from one another on the second main face of the insulant film; B) folding the film composite on a fold line, so that a first contact face of a first conductor track lies on a first contact face of a second conductor track of the first main face, and a second contact face of this first conductor track of the first main face lies on a second contact face of the second conductor track of the first main.
A power semiconductor module has a substrate and an insulation layer and a metal layer arranged on the insulation layer, forming conductor tracks, comprising power semiconductor components arranged on the metal layer and conductively contacted with the metal layer. A pressure device arranged above the substrate in the normal direction of the insulation layer and having a pressure body and pressure elements running toward the substrate. The pressure elements each being connected to the pressure body to move resiliently in the normal direction via a spring element. The pressure body exerting a pressure onto the pressure elements in the direction toward the substrate via the spring elements, the pressure elements being arranged in such a way that, owing to the pressure exerted by the pressure body, they press onto power semiconductor component surrounding regions, surrounding the power semiconductor components, of the substrate.
H01L 23/40 - Supports ou moyens de fixation pour les dispositifs de refroidissement ou de chauffage amovibles
H01L 23/367 - Refroidissement facilité par la forme du dispositif
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 23/04 - ConteneursScellements caractérisés par la forme
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
15.
Power semiconductor module having a DC voltage connecting device
A power semiconductor module has a substrate, with power semiconductor components, and a DC voltage connecting device, which has a first and a second flat conductor connecting element and at least one first metal layer connecting element and at least one second metal layer connecting element, wherein the second flat conductor connecting element is arranged spaced apart in the normal direction of the first flat conductor connecting element from the first flat conductor connecting element, the first flat conductor connecting element is electrically connected by the first metal layer connecting element and the second flat conductor connecting element is electrically connected by the second metal layer connecting element to the metal layer, the first flat conductor connecting element has a flat conductor end section and a flat conductor connection section arranged between the one first metal layer connecting element and the flat conductor end section.
H01L 23/49 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes formées de structures soudées du type fils de connexion
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
A converter device has a converter that has power semiconductor switches and has a control device that is designed to drive the power semiconductor switches. The control device is designed to drive the power semiconductor switches so that electrical switching losses occurring in the converter are reduced during use.
A liquid cooling device with a main body has a planar surface for the arrangement of a power semiconductor device. This main body has a first end face and a second end face opposite said first one, and a plurality of tubular cooling recesses extending from the first to the second end face. A first swirling element arranged in an associated cooling recess, wherein the swirling element has an operative section arranged within the associated cooling recess and a locking section, wherein the locking section interacts with a locking abutment and/or with a further swirling element, and therefore prevents rotation of the operative section in the associated recess.
A method and an apparatus for the pressure-sintering connection of a first and a second connection provide a frame element lowerable onto a frame surface surrounding the supporting surface, having a sintering ram lowerable lowered from the normal direction onto the second connection partner and exerts pressure thereon, and converting a sintering paste between the connection partners into a sintered metal, and having an auxiliary apparatus for the arrangement of a separating film for the peripheral covering of the frame surface and the connection partners. This arrangement of the separating film produces an inner region bounded by the frame element and bounded by a separating film portion within the frame element and by the supporting surface, and injection opening and an outlet opening allow a second gas to flush through said inner region from the injection opening to the outlet opening and displace a first gas.
B23K 20/00 - Soudage non électrique par percussion ou par une autre forme de pression, avec ou sans chauffage, p. ex. revêtement ou placage
B22F 7/06 - Fabrication de couches composites, de pièces ou d'objets à base de poudres métalliques, par frittage avec ou sans compactage de pièces ou objets composés de parties différentes, p. ex. pour former des outils à embouts rapportés
B23K 20/02 - Soudage non électrique par percussion ou par une autre forme de pression, avec ou sans chauffage, p. ex. revêtement ou placage au moyen d'une presse
19.
Pressing device for directly or indirectly applying pressure to power-semiconductor components of a power-semiconductor module
A pressing device for indirectly or directly applying pressure to power-semiconductor components of a power-semiconductor module, having a pressing plate, having a pressing nub element which is formed from an elastic material and which has a pressing nub plate and pressing nubs projecting therefrom, and having a receiving device for receiving the pressing nub element, which receiving device has a base plate provided with recesses, wherein the recesses run through the base plate, wherein the pressing nub plate is arranged on the base plate and the pressing nubs run through the recesses and, on the main side of the base plate facing away from the pressing nub plate, project beyond this main side of the base plate, and wherein the pressing nub plate is arranged between the pressing plate and the base plate.
A power semiconductor module includes a flexible first substrate and a flexible second substrate and a first and second power semiconductor switch arranged between the first and second substrate. The first substrate has an electrically conductive first metal layer facing towards the power semiconductor switches, an electrically conductive second metal layer and an electrically non-conductive first insulation film arranged between the first and second metal layer. The second substrate has an electrically non-conductive second insulation film and a third metal layer arranged on the second insulation film. The first and second power semiconductor switch are electrically interconnected by the first and second substrate to form a half-bridge circuit.
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H01L 23/367 - Refroidissement facilité par la forme du dispositif
H01L 23/498 - Connexions électriques sur des substrats isolants
21.
Power semiconductor module having a substrate, power semiconductor components and having a DC voltage connection device
A power semiconductor module has a substrate that has an electrically non-conductive insulating layer and a first metal layer on the insulating layer and forms conductor tracks, with power semiconductor components arranged on the first metal layer and electrically connected to the first metal layer and having a DC voltage connection device that has a first, second and third flat conductor connection element that are arranged on an end region of the power semiconductor module and that are electrically conductively connected to the first metal layer. During operation, the first and second flat conductor connection elements have a first electrical polarity and the third flat conductor connection element has a second electrical polarity.
H02M 7/00 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant continuTransformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif
A functional component and having a partial plastic housing element with a plastic housing wall, the plastic housing wall having a device identification region integrated into the plastic housing wall and thus realizing a constituent part of the plastic housing wall. The device identification region comprising identification elements integrated into the plastic housing wall, those identification elements that realize part of a surface of the plastic housing wall realizing device identification elements, the device identification region being realized individually for the device by the device identification elements, such that the device can be unambiguously identified by means of the device identification region.
G06K 7/14 - Méthodes ou dispositions pour la lecture de supports d'enregistrement par radiation électromagnétique, p. ex. lecture optiqueMéthodes ou dispositions pour la lecture de supports d'enregistrement par radiation corpusculaire utilisant la lumière sans sélection des longueurs d'onde, p. ex. lecture de la lumière blanche réfléchie
B29C 45/00 - Moulage par injection, c.-à-d. en forçant un volume déterminé de matière à mouler par une buse d'injection dans un moule ferméAppareils à cet effet
B29C 45/16 - Fabrication d'objets multicouches ou polychromes
G06K 19/06 - Supports d'enregistrement pour utilisation avec des machines et avec au moins une partie prévue pour supporter des marques numériques caractérisés par le genre de marque numérique, p. ex. forme, nature, code
B29L 31/34 - Appareils électriques, p. ex. bougies ou leurs parties constitutives
23.
Power semiconductor module and method for producing a power semiconductor module
A power semiconductor module includes a substrate, having power semiconductor components, further including a housing element, and having a DC voltage connection device having a flat lead connection device and a second flat lead connection element, wherein the flat lead connection device has a first flat lead connection element encased by a plastic element of the flat lead connection device and materially bonded to the plastic element, wherein a connection section of the first flat lead connection element projects from the plastic element, a connection section of the second flat lead connection element is arranged on the plastic element or is at least partly enclosed by the plastic element and bonded to the plastic element so that a section of the plastic element is between the first flat lead connection element and the connection section of the second flat lead connection element.
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
H01L 23/40 - Supports ou moyens de fixation pour les dispositifs de refroidissement ou de chauffage amovibles
H01R 4/30 - Connexions par serrageConnexions par ressort utilisant un organe de serrage constitué par une vis ou par un écrou
H01R 12/51 - Connexions fixes pour circuits imprimés rigides ou structures similaires
H02M 3/00 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu
24.
Power semiconductor device and a method for producing a power semiconductor device
A power semiconductor device has a substrate on which power semiconductor switches are arranged and has a circuit board which includes conductive first plug-in connection contacts, a capacitor, a capacitor holding element that includes a reception device for receiving the capacitor, a temperature sensor for the capacitor, a temperature sensor holding element that has a plug-in region for conductive second plug-in connection contacts. There are temperature sensor connecting lines which electrically connect the temperature sensor and the second plug-in connection contacts to one another, at least one section of a temperature sensor connecting line being configured as a conductor track on the temperature sensor holding element, the second plug-in connection contacts forming an electrically conductive plug-in connection with the first plug-in connection contacts.
H01G 2/08 - Dispositions de réfrigérationDispositions de chauffageDispositions de ventilation
H01G 2/06 - Dispositifs de montage spécialement adaptés pour le montage sur un support de circuit imprimé
H01G 4/40 - Combinaisons structurales de condensateurs fixes avec d'autres éléments électriques non couverts par la présente sous-classe, la structure étant principalement constituée par un condensateur, p. ex. combinaisons RC
H05K 7/14 - Montage de la structure de support dans l'enveloppe, sur cadre ou sur bâti
H05K 7/20 - Modifications en vue de faciliter la réfrigération, l'aération ou le chauffage
H05K 1/11 - Éléments imprimés pour réaliser des connexions électriques avec ou entre des circuits imprimés
25.
Power electronics system with a switching device and a liquid cooling device
A power electronics system has a switching device and a liquid cooling device. A switching device has a plate element, and power semiconductor devices are arranged on conductor tracks and connected by means of a connecting device, wherein the liquid cooling device has a first partial body having an inlet volume region and an outlet volume region and a second partial body. A cooling volume region is formed between the two partial bodies, wherein heat transfer bodies protrude into the cooling volume region from the second partial body. The second partial body is arranged in a recess of the first partial body and the two partial bodies are connected to each other and have a common plane surface which forms a first main surface.
H01L 23/473 - Dispositions pour le refroidissement, le chauffage, la ventilation ou la compensation de la température impliquant le transfert de chaleur par des fluides en circulation par une circulation de liquides
H01L 23/433 - Pièces auxiliaires caractérisées par leur forme, p. ex. pistons
26.
Electronic power unit and semiconductor power module
An electronic power unit has a substrate with a perpendicular direction and a flat insulating molded body has a metal layer on a first main face and conductor tracks on a second main face. The substrate is in a non-positive locking or materially-bonded manner on a base plate of the electronic power unit. A first fastening device is on the base plate in a non-positive locking manner on a cooling device or a housing section has a second fastening device provided to arrange the substrate in a non-positive locking manner on a cooling device.
H01L 23/053 - ConteneursScellements caractérisés par la forme le conteneur étant une structure creuse ayant une base isolante qui sert de support pour le corps semi-conducteur
H01L 23/13 - Supports, p. ex. substrats isolants non amovibles caractérisés par leur forme
H01L 23/40 - Supports ou moyens de fixation pour les dispositifs de refroidissement ou de chauffage amovibles
H01L 23/498 - Connexions électriques sur des substrats isolants
27.
Power electronic switching device with a three-dimensionally preformed insulation molding and a method for its manufacture
A power electronic switching device has a substrate facing in a normal direction with a first and a second conductive track, and a power semiconductor component is arranged on the first conductive track by an electrically conductive connection. The power semiconductor component has a laterally surrounding edge and an edge region and a contact region on its first primary side facing away from the substrate, and with a three-dimensionally preformed insulation molding that has an overlap segment, a connection segment and an extension segment, wherein the overlap segment, starting from the edge partially overlaps the edge region of the power semiconductor component.
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
H01L 23/485 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes formées de couches conductrices inséparables du corps semi-conducteur sur lequel elles ont été déposées formées de structures en couches comprenant des couches conductrices et isolantes, p. ex. contacts planaires
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
H01L 23/482 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes formées de couches conductrices inséparables du corps semi-conducteur sur lequel elles ont été déposées
28.
Power electronic switching device, power semiconductor module therewith and method for production
A production method and a power electronic connecting device for a power semiconductor module, wherein the connecting device is designed as a flexible film stack of a first and a second electrically conductive film and an electrically insulating film arranged therebetween, wherein at least one of the electrically conductive films is structured in itself and thus forms a plurality of film conductor tracks, wherein a first one of these film conductor tracks has, in a first section, a first average thickness and, in a second section, a second average thickness which is at least 10%, preferably at least 20%, smaller than the first average thickness.
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
29.
POWER ELECTRONIC CIRCUIT DEVICE WITH A PRESSURE DEVICE
A power electronic circuit device has a substrate, with multiple conductive tracks, and a power semiconductor component on these conductive tracks has a connection device with a metal sheet which electrically connects a contact pad of the power semiconductor component to a contact pad of a further power semiconductor component or a conductive track, and has a pressure device. The connection device includes a contact section for connection to an assigned contact pad and a connecting section arranged between the two contact sections. The pressure device includes a two-dimensional resilient pressure element that comprises pressure element sections, and first pressure element sections press with a first pressure surface section onto a contact section and second pressure element section presses with a second pressure surface section press onto the connecting section.
H01L 23/16 - Matériaux de remplissage ou pièces auxiliaires dans le conteneur, p. ex. anneaux de centrage
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/043 - ConteneursScellements caractérisés par la forme le conteneur étant une structure creuse ayant une base conductrice qui sert de support et en même temps de connexion électrique pour le corps semi-conducteur
30.
Power electronic assembly with an electrically conductive sleeve and with a circuit carrier
A power electronic assembly with a sleeve that has a virtual longitudinal axis and a circuit carrier. The sleeve has a tube-shaped plug-in section which runs around the longitudinal axis, and a first base section arranged at a first end of the plug-in section and runs around the longitudinal axis and extends away from the longitudinal axis. The first base section has at its end a flat first contact surface which runs around the longitudinal axis in a closed manner and which runs in a first plane which runs perpendicular to the longitudinal axis. The first base section has an edge surface which runs around the longitudinal axis in a closed manner and the first base section has a second contact surface which runs from the first contact surface and away from the first plane in the direction towards the edge surface.
A power converter module has a switching device with a substrate with a first and a second DC voltage conductor track and a first and a second DC voltage terminal element connected in an electrically conducting manner with the correct polarity, and having a first and a second DC voltage connection element. The first DC voltage terminal element is connected to the first DC voltage connection element in an electrically conducting manner with the correct polarity by means of a first materially-bonded connection, wherein the second DC voltage terminal element is connected to the second DC voltage connection element in an electrically conducting manner with the correct polarity by means of a second materially-bonded connection.
H02M 7/00 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant continuTransformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif
H01R 4/34 - Conducteurs logés sous la tête d'une vis
A power electronic arrangement has a plurality of single-phase power semiconductor modules and one multi-phase power semiconductor module, wherein each single-phase power semiconductor module has a first, at least frame-like housing, two first DC voltage terminal elements, a first AC voltage terminal element, first auxiliary terminal elements and a first switching device. The multi-phase power semiconductor module has a second, at least frame-like housing, two second DC voltage terminal elements, at least two second AC voltage terminal elements, second auxiliary terminal elements and a second switching device. The first and second DC voltage terminal elements each form a stack in a section of their length and on the terminal sections are designed identically. All the power semiconductor modules are arranged in a row in the direction of the normal vectors of the respective first longitudinal side. The first and second DC voltage terminal elements of all power semiconductor modules are arranged on the same, a first, narrow side.
H05K 7/02 - Dispositions de composants de circuits ou du câblage sur une structure de support
H02M 7/00 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant continuTransformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif
H01L 25/10 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs ayant des conteneurs séparés
H01L 23/50 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes pour des dispositifs à circuit intégré
33.
Power semiconductor module with press-fit contact element
A power semiconductor module has a substrate, load and auxiliary connector elements, and a plastic body, which preferably is a housing or a housing frame and which has a channel. The channel being for the arrangement of a compensating portion of a press-fit contact element. The press-fit contact element has a press-fit portion, a compensating portion and a foot portion, the compensating portion being elastic in a longitudinal direction of the press-fit contact element and having at least two O-shaped sub-portions arranged in succession in the longitudinal direction and having a constriction arranged between two sub-portions.
H01R 13/426 - Fixation de manière démontable par un dispositif de retenue indépendant et élastique porté par le socle ou par le boîtier, p. ex. par un collier
H01R 12/58 - Connexions fixes pour circuits imprimés rigides ou structures similaires caractérisées par les bornes bornes pour insertion dans des trous
H01R 13/415 - Fixation d'une manière non démontable, p. ex. par moulage, rivetage par déformation permanente de la pièce de contact
A power electronics submodule for mounting on a cooling device, has first and second surface sections next to one another, a substrate with a housing and includes a connection element, conductively connected by a contact to a track of the substrate and a connection section, arranged parallel to the substrate, the substrate arranged on the first surface section, the housing has a housing section, with a first main surface, arranged on the second surface section, and a second main surface, situated opposite the first main surface. In a non-mounted state a first main surface of the connection section is a first distance from the second main surface of the housing section in the housing region of a fastening device.
A power electronics system has a housing, a cooling device, a power semiconductor module and a capacitor device, wherein a cooling section of a capacitor connection device is in thermally conducting contact with a cooling surface of the cooling device.
H05K 7/20 - Modifications en vue de faciliter la réfrigération, l'aération ou le chauffage
H01G 2/08 - Dispositions de réfrigérationDispositions de chauffageDispositions de ventilation
H01G 4/236 - Bornes pour traverser l'enveloppe, c.-à-d. traversée d'entrée
H01L 23/473 - Dispositions pour le refroidissement, le chauffage, la ventilation ou la compensation de la température impliquant le transfert de chaleur par des fluides en circulation par une circulation de liquides
A sintering press for producing a sintered connection between a first connection partner and a second connection partner disposed thereabove, having a suction-fixing installation for fixing the first connection partner, having a compression piece which is disposed above the suction-fixing installation. The sintering press for producing the sintered connection is configured for converging the compression piece and the suction-fixing installation relative to one another and for mutually compressing the first connection partner and the second connection partner, wherein the suction-fixing installation on the side thereof that faces the compression piece has first suction openings, wherein the suction-fixing installation, when the first connection partner is disposed above the first suction openings, by generating a negative pressure at the first suction openings, is configured for suctioning the first connection partner and, on account thereof, for fixing the latter in relation to the suction-fixing installation. The invention furthermore relates to a pressure sintering method for producing a sintered connection by the sintering press.
B22F 7/06 - Fabrication de couches composites, de pièces ou d'objets à base de poudres métalliques, par frittage avec ou sans compactage de pièces ou objets composés de parties différentes, p. ex. pour former des outils à embouts rapportés
B22F 7/08 - Fabrication de couches composites, de pièces ou d'objets à base de poudres métalliques, par frittage avec ou sans compactage de pièces ou objets composés de parties différentes, p. ex. pour former des outils à embouts rapportés avec une ou plusieurs parties non faites à partir de poudre
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
A power semiconductor module contains a power semiconductor assembly, a housing which in a housing side with an outer surface has a recess with a direction of passage in the normal direction of the outer surface, having an internal contact device which has an electrically conducting contact inside the housing to an external connection element, designed as a load terminal element, with one section in the recess and having a spring element. The connection element is designed as a rigid metallic shaped body with an inner and an outer contact surface, and the outer contact surface is accessible from the outside, and the connection element is connected to the housing via an electrically insulating and mechanically elastic retaining device such that the connection element is moveable in the direction of passage, and wherein the spring element is arranged and designed in such a way that the spring action thereof acts directly or indirectly on the connection element in the direction of passage.
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
42.
Power semiconductor module with power semiconductor switches
A power semiconductor module has a first and second intermediate circuit rail, an AC potential rail and with a packaged first and second power semiconductor switch. The respective power semiconductor switch has a first and second load current terminal and a control terminal, wherein the first power semiconductor switch is between the first intermediate circuit rail and the AC potential rail and the second power semiconductor switch is between the second intermediate circuit rail and the AC potential rail. The first load terminal of the first power semiconductor switch is contacted to the first intermediate circuit rail and the second load terminal of the first power semiconductor switch is electrically conductively contacted to the AC potential rail.
H01L 25/11 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs ayant des conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H01L 23/50 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes pour des dispositifs à circuit intégré
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
H01R 12/71 - Dispositifs de couplage pour circuits imprimés rigides ou structures similaires
09 - Appareils et instruments scientifiques et électriques
Produits et services
Recorded computer software as a component part for operation of integrated drive train motor controllers containing electrical and electronic converters and power control modules
44.
Circuit device having a power converter and a capacitor discharge device
A circuit device has a power converter, which includes power semiconductor switches and a capacitor which is connected to a first and a second intermediate circuit conductor in an electrically conductive manner, and having a capacitor discharge device for the electrical discharging of the capacitor. The capacitor discharge device includes an actuation device, an electrical discharge resistor and a first semiconductor switch having a first and a second load current terminal, and having a control terminal. The first load current terminal of the first semiconductor switch is connected to the first intermediate circuit conductor via the discharge resistor, and the second load current terminal of the first semiconductor switch connects to the second intermediate circuit conductor. The actuation device on the control terminal of the first semiconductor switch generates an actuating voltage, in accordance with a control signal, for the closing and opening of the first semiconductor switch, and having a capacitor discharge monitoring device, which is designed to monitor an electric monitoring voltage which is present between the first load current terminal of the first semiconductor switch and the second intermediate circuit conductor and, in the event that the monitoring voltage is lower than a monitoring voltage limiting value, to generate a capacitor discharge signal.
H02J 7/00 - Circuits pour la charge ou la dépolarisation des batteries ou pour alimenter des charges par des batteries
H02M 1/32 - Moyens pour protéger les convertisseurs autrement que par mise hors circuit automatique
H02M 7/5387 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs, p. ex. onduleurs à impulsions à un seul commutateur dans une configuration en pont
The invention relates to a power semiconductor device comprising a pin element which passes through a housing opening, comprising a support device, further comprising an elastic sealing device which is arranged on the support device, comprising a pressure device which is arranged on the sealing device, and comprising an electrically conductive sleeve. A first pressure element of the pressure device presses a first sealing element of the sealing device against a first support element of the support device in the axial direction of the pin element causes deformation of the first sealing element so that the first sealing element presses against the housing opening wall and against the sleeve in a perpendicular direction in relation to the axial direction of the pin element. A second pressure element of the pressure device is designed to press a second sealing element of the sealing device against a second support element of the support device in the axial direction of the pin element and in this way to cause deformation of the second sealing element in such a way that the second sealing element presses against the sleeve and against the pin element in a perpendicular direction in relation to the axial direction of the pin element.
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
H01L 23/04 - ConteneursScellements caractérisés par la forme
H01L 23/528 - Configuration de la structure d'interconnexion
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H05K 7/14 - Montage de la structure de support dans l'enveloppe, sur cadre ou sur bâti
H01R 12/71 - Dispositifs de couplage pour circuits imprimés rigides ou structures similaires
A control device for a power semiconductor switch includes an actuating device, which on a third control device terminal, upon the reception of a switching on command, generates an actuating voltage for the switching on of the power semiconductor switch and, upon the reception of an switching off command, generates an actuating voltage for the switching off of the power semiconductor switch, and a current detection circuit, which generates a first high-current signal if an actuating voltage assumes a voltage value at which the power semiconductor switch is switched on, and a primary voltage of the power semiconductor switch applied between first and second control device terminals exceeds a first power semiconductor switch primary voltage value. The actuating device, upon the reception of an switching off command, generates an actuating voltage for the switching off of the power semiconductor switch, such that the actuating voltage is reduced such that the time interval elapsing between a first actuating voltage value, assumed by the actuating voltage upon the reception of the switching off command, and the achievement of a second actuating voltage value of the actuating voltage, which is equal to 10% of the first actuating voltage value, is greater in the presence of the first high-current signal than in the absence of the first high-current signal.
H03K 17/0812 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension sans réaction du circuit de sortie vers le circuit de commande par des dispositions prises dans le circuit de commande
A diode has a semiconductor body having a first and a second semiconductor body main side. The semiconductor body has a first semiconductor zone. The semiconductor body has a second semiconductor zone arranged on the first semiconductor zone in an inner region of the semiconductor body and not extending as far as the semiconductor body edge of the semiconductor body. The semiconductor body has a third semiconductor zone arranged on the second semiconductor zone and has a higher doping concentration than the second semiconductor zone. The semiconductor body has a fourth semiconductor zone arranged on the first semiconductor zone in a semiconductor body edge region and extending from the second semiconductor zone in the direction towards the semiconductor body edge as far as the semiconductor body edge.
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
The invention provides a pressure sintering method including: a) providing a sintered component arrangement with a workpiece carrier having recesses, with a substrate resting on a main surface of the workpiece carrier, wherein a sintering material to be sintered is arranged between the power semiconductor components and the substrate, a first power semiconductor component and a first region of the substrate arranged above the workpiece carrier in the normal direction of the first main side of the insulation layer flush with a first recess of the workpiece carrier, and a second power semiconductor component and a second region of the substrate are arranged above the workpiece carrier in the normal direction of the first main side of the insulation layer flush with a second recess of the workpiece carrier and a step of b) pressurizing the power semiconductor components and applying a temperature treatment.
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
H01L 23/367 - Refroidissement facilité par la forme du dispositif
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H01L 25/00 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
52.
Circuit configuration for controlling a power semiconductor device with two circuit carriers and a plastic molded body and arrangement having said configuration
A circuit configuration for controlling a power semiconductor device has a first circuit carrier and a second circuit carrier arranged parallel to and spaced apart from the first, and having a plastic molded body arranged in an intermediate space between the first and second circuit carrier, wherein the first circuit carrier has a first conductor track with a first contact point, which can be implemented in particular as a contact pad or as a contact receptacle, which is arranged on a main side of the first circuit carrier facing the plastic molded body, wherein the second circuit carrier has a second conductor track with a second contact point, which is arranged on a main side of the second circuit carrier facing the plastic molded body, wherein the plastic molded body has a first holder for a first component with a first and a second contact device, and wherein the first contact device is electrically conductively connected to the first contact point and the second contact device is electrically conductively connected to the second contact point.
The invention relates to a power electronic switching device having a substrate, which has a non-conductive insulation layer on which at least one first conductor track 40 and at least one second conductor track 50 are applied. The first conductor track 40 is assigned an electrical DC voltage potential DC+ of the power electronic switching device and the one second conductor track 50 is assigned an electrical AC voltage potential AC of the power electronic switching device. At three first partial power switches are arranged on the first conductor track. At least three second partial power switches are arranged on the second conductor track. The at least three first partial power switches are connected electrically in parallel with each other to form a first parallel circuit and the at least three second partial power switches are electrically connected in parallel with each other to form a second parallel circuit. The at least three first partial power switches and the at least three second partial power switches are arranged on the substrate 30 in a chessboard-like pattern.
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
A control device for a power semiconductor switch, includes an actuating device, a first current path, a second current path, which connects the second output of the actuating device to a circuit node of the control device in an electrically conductive manner, wherein the second current path incorporates an electrical switching off resistor which is electrically connected in-circuit between a second output of the actuating device and the circuit node of the control device, a third current path, which connects the circuit node of the control device to a control device terminal of the control device in an electrically conductive manner, and an switching off acceleration circuit, which is electrically connected in parallel with the switching off resistor, comprising a diode, an electrical resistor, and a capacitor which is electrically connected in parallel with said resistor, wherein the cathode of the diode is connected to a second electrical terminal of the capacitor in an electrically conductive manner, and a first electrical terminal of the capacitor is connected to a first terminal of the switching off resistor, which is electrically oriented towards the actuating device in an electrically conductive manner, and the anode of the diode is connected to a second electrical terminal of the switching off resistor in an electrically conductive manner.
H03K 17/041 - Modifications pour accélérer la commutation sans réaction du circuit de sortie vers le circuit de commande
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
H03K 3/012 - Modifications du générateur pour améliorer le temps de réponse ou pour diminuer la consommation d'énergie
09 - Appareils et instruments scientifiques et électriques
16 - Papier, carton et produits en ces matières
Produits et services
A full line of apparatus for conducting, switching, transforming, accumulating, regulating or controlling electricity, namely, semiconductors, transformers, thyristors, integrated electronic and electric components, rectifier, diodes, inverter, voltage and current regulators, contact devices for electric and electronic components Printed matter, namely, leaflets, brochures featuring descriptions about electronics and semiconductors, posters, pictures, manuals and handbooks in the field of electronics and semiconductors
A method for producing a power electronics system having a cooling device, a switching device, a terminal device, a capacitor device and a control device includes the following production steps: providing a cooling device with a plurality of first and second positioning cutouts; providing the switching device with a substrate and a first mounting device, which has first positioning devices; providing the terminal device, which is completely independent of the switching device, i.e. forms a dedicated component part or a dedicated assembly, with a second mounting device, which has second positioning devices; arranging the switching device on the cooling device, wherein the first positioning devices are arranged in the respectively assigned first positioning cutouts; arranging the terminal device on the cooling device, wherein the respective second positioning devices are arranged in the assigned second positioning cutouts; arranging the capacitor device.
H01R 12/51 - Connexions fixes pour circuits imprimés rigides ou structures similaires
H05K 3/36 - Assemblage de circuits imprimés avec d'autres circuits imprimés
H05K 7/20 - Modifications en vue de faciliter la réfrigération, l'aération ou le chauffage
H05K 1/14 - Association structurale de plusieurs circuits imprimés
H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés
H02K 11/33 - Circuits d’entraînement, p. ex. circuits électroniques de puissance
B62D 65/02 - Assemblage de sous-ensembles ou de composants avec la caisse ou entre eux, ou positionnement de sous-ensembles ou de composants par rapport à la caisse ou à d'autres sous-ensembles ou d'autres composants
H02K 5/22 - Parties auxiliaires des enveloppes non couvertes par les groupes , p. ex. façonnées pour former des boîtes à connexions ou à bornes
57.
Power electronics assembly having an adhesion layer, and method for producing said assembly
A power electronics method and assembly produced by the method. The assembly has a substrate, having a power semiconductor element, and an adhesion layer disposed therebetween, wherein the substrate has a first surface that faces a power semiconductor element, a power semiconductor element has a third surface that faces the substrate, the adhesion layer has a second surface which, preferably across the full area, contacts the third surface and has a first consistent surface contour having a first roughness, and wherein a fourth surface of the power semiconductor element that is opposite the third surface has a second surface contour having a second roughness, said second surface contour following the first surface contour.
A submodule and an assembly include a switching device having a substrate, and printed conductors arranged thereupon. The submodule incorporates a first and a second DC voltage printed conductor, to which a first and a second DC voltage terminal element are connected in an electrically conductive manner, and an AC voltage printed conductor, to which an AC voltage terminal element is connected in an electrically conductive manner. The submodule further comprises an insulating moulding, which encloses the switching device in a frame-type arrangement. The first DC voltage terminal element, by means of a first contact section, engages with a first supporting body of the insulating moulding, and the AC voltage terminal element, by means of a second contact section, engages with a second supporting body of the insulating moulding. To this end, a first clamping device is configured to project through a first recess in the first supporting body, in an electrically insulating manner, and to form an electrically-conductive clamping connection between the first DC voltage terminal element and an associated first DC voltage connecting element, and a second clamping device is configured to project through a second recess in the second supporting body, in an electrically insulating manner, and to form an electrically-conductive clamping connection between the AC voltage terminal element and an associated AC voltage connecting element.
H02M 7/00 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant continuTransformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif
The invention presents a power electronic arrangement comprising a power electronic switching device, a printed circuit board for carrying control signals for driving the power electronic switching device, a housing which covers the printed circuit board, a communication device which is arranged on the printed circuit board and is accessible through a recess in the housing, and comprising a sealing device, wherein the sealing device has a sealing section which rests in a sealing manner on a first sealing face of the communication device, and wherein the sealing device has a first and second sealing lip which are each arranged circumferentially around and at a distance from the communication device, wherein the two sealing lips are connected to one another by a web and both rest on a second sealing face of the printed circuit board, and wherein the housing has a wall-like pressure device which presses on the web and in this way the first sealing lip bears against that side of the pressure device which faces the communication device, and the second sealing lip bears against that side of the pressure device which is averted from the communication device.
H01R 12/00 - Association structurelle de plusieurs éléments de connexion électrique isolés les uns des autres, spécialement conçue pour des circuits imprimés, p. ex. des cartes de circuit imprimé [PCB], des câbles plats ou à ruban ou des structures similaires généralement planes, p. ex. barrettes de raccordement, blocs de connexionDispositifs de couplage spécialement conçus pour des circuits imprimés, des câbles plats ou à ruban ou des structures similaires généralement planesBornes spécialement conçues pour établir le contact avec, ou pour être insérées dans des circuits imprimés, des câbles plats ou à ruban ou des structures similaires généralement planes
H01R 13/52 - Boîtiers protégés contre la poussière, les projections, les éclaboussures, l'eau ou les flammes
A power electronic arrangement having a power semiconductor module and an external load-connecting element is provided with the external load-connecting element has a first connection device, and the power semiconductor module has a housing, a base plate and an internal load-connecting element with a second connection device, wherein the base plate has a first cut out through which the first connection device extends into the interior of the power semiconductor module and is connected there in a frictionally locking and electrically conductive fashion to a second connection device of the internal load-connecting element.
H01L 23/40 - Supports ou moyens de fixation pour les dispositifs de refroidissement ou de chauffage amovibles
H01L 23/055 - ConteneursScellements caractérisés par la forme le conteneur étant une structure creuse ayant une base isolante qui sert de support pour le corps semi-conducteur les connexions ayant un passage à travers la base
H05K 7/20 - Modifications en vue de faciliter la réfrigération, l'aération ou le chauffage
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01R 4/34 - Conducteurs logés sous la tête d'une vis
H01R 4/56 - Connexions conductrices de l'électricité entre plusieurs organes conducteurs en contact direct, c.-à-d. se touchant l'un l'autreMoyens pour réaliser ou maintenir de tels contactsConnexions conductrices de l'électricité ayant plusieurs emplacements espacés de connexion pour les conducteurs et utilisant des organes de contact pénétrant dans l'isolation un conducteur étant vissé dans un autre
A control device for a power semiconductor switch, has a first, second and third electrical control device terminal, and a control device that according to a control signal generates an actuation voltage on the third control device terminal and actuates the power semiconductor switch. An overcurrent detection circuit determines a first voltage corresponding to a primary power semiconductor switch voltage present between the first and second control device terminals and, if the first voltage, further to commence the generation of an actuation voltage for a switch-on of the power semiconductor switch, and if the voltage exceeds a reference voltage, to generate an overcurrent detection signal. A blocking circuit blocks the output of the overcurrent detection signal from the overcurrent detection circuit, if a control current flowing in the third control device terminal for the actuation of the power semiconductor switch exceeds a first current value and/or is designed to block the output of the overcurrent detection signal from the overcurrent detection circuit, if the actuation voltage is smaller than a first voltage value.
H03K 17/0812 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension sans réaction du circuit de sortie vers le circuit de commande par des dispositions prises dans le circuit de commande
G01R 19/165 - Indication de ce qu'un courant ou une tension est, soit supérieur ou inférieur à une valeur prédéterminée, soit à l'intérieur ou à l'extérieur d'une plage de valeurs prédéterminée
H02M 3/335 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
H03K 17/26 - Modifications pour assurer un blocage temporaire après réception des impulsions de commande
H02M 1/32 - Moyens pour protéger les convertisseurs autrement que par mise hors circuit automatique
H03K 17/082 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension par réaction du circuit de sortie vers le circuit de commande
H02M 1/00 - Détails d'appareils pour transformation
62.
Power converted arrangement for feeding vehicles and installation comprising the same
A power converter arrangement, for feeding a plurality of energy stores of electrically driven vehicles has a transformer having a first multiphase winding and a plurality of second multiphase windings. The first winding is embodied to be connected to a power supply system, in particular to a medium-voltage power supply system, and the second windings are each connected to a first connection of an associated power converter. The invention also presents an installation having such a power converter arrangement, wherein the transformer is arranged in a weatherproof enclosure and at least a plurality of power converters form parts of respective charging stations.
H02J 7/02 - Circuits pour la charge ou la dépolarisation des batteries ou pour alimenter des charges par des batteries pour la charge des batteries par réseaux à courant alternatif au moyen de convertisseurs
B60L 11/18 - utilisant de l'énergie fournie par des piles primaires, des piles secondaires ou des piles à combustibles
B60L 53/22 - Détails de structure ou aménagements des convertisseurs de charge spécialement adaptés pour recharger des véhicules électriques
B60L 53/67 - Commande de plusieurs stations de charge
A power electronic arrangement has a power converter module, and a first and a second DC voltage terminal element and a first and a second DC voltage connection element, connected to conductor tracks in an electrically conductive manner with the correct polarity. First and second DC voltage terminal element, and the first and second DC voltage connection element, form a stack with an insulation device therebetween. The first DC voltage terminal element has a first recess enclosed in a first main plane, the second DC voltage connection element has a second recess enclosed and aligned with the first in a third main plane, the second DC voltage terminal element and the first DC voltage connection element are in a second main plane between the first and third main plane, and are laterally spaced from each other proximate the recesses. A clamping device is electrically isolated through the first and second recess and forms an electrically conducting clamped connection between the first DC terminal element and the first DC connection element, and between the second DC terminal element and the second DC connection element.
H02M 7/00 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant continuTransformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif
H02M 7/483 - Convertisseurs munis de sorties pouvant chacune avoir plus de deux niveaux de tension
H02M 7/537 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs, p. ex. onduleurs à impulsions à un seul commutateur
64.
Semiconductor diode and electronic circuit arrangement herewith
A semiconductor diode includes a semiconductor body, having a first main area formed from an inner area, on which a first contact layer is arranged, and from an edge area, a current path from the first contact layer to a second contact layer arranged on a second main area situated opposite the first main area, wherein the semiconductor diode, by virtue of the configuration of the first contact layer or of the semiconductor body, is formed such that upon current flow, such current flows through a current path having the greatest heating per unit volume, and which proceeds from a further partial area of the inner area, wherein the further partial area is arranged on the other side of a boundary of an inner partial area of the inner area, said inner partial area preferably being arranged centrally, with respect to an outer partial area adjoining said inner partial area.
09 - Appareils et instruments scientifiques et électriques
Produits et services
(1) Electrical and electronic components in the nature of semiconductors, integrated circuits, power transformers, capacitors, voltage regulators, power transistors, diodes, thyristors, rectifiers, and transistors; power transformer; voltage converters; voltage regulators; semiconductors; semiconductor components namely discrete and integrated semiconductors, transistors; particularly bipolar transistors; field-effect transistors and power transistors; diodes, particularly power diodes; thyristors, particularly power thyristors; power semiconductors; power semiconductors with power semiconductor components; power semiconductors with pressure device for electrical contacting of substrates; power and switching connecting elements for substrates and power semiconductors; power semiconductors with pressure devices for thermal bonding of substrates, power and switching connecting elements for substrates and power semiconductors; converter units with power semiconductors and electrical and electronic components for controlling power semiconductors; power converters comprised primarily of the aforesaid converter units; electrical and electronic components for land, sea and air vehicles in the nature of semiconductors, integrated circuits, power transformers, capacitors, voltage regulators, power transistors, diodes, thyristors, rectifiers, and transistors; power converters; voltage transformer; voltage regulator; semiconductors; semiconductors, in particular discrete and integrated semiconductors; transistors, particularly bipolar transistors, field-effect transistors and power transistors; diodes, particularly power diodes; thyristors, particularly power thyristors; power semiconductors; power semiconductors with power semiconductor components; power semiconductors with pressure devices for the electrical contacting of substrates, power and switching connecting elements for substrates and power semiconductor components; power semiconductors with pressure devices for thermal contacting of substrates, power and switching connecting elements for substrates and power semiconductor components; converter units with power semiconductors for controlling power semiconductors
66.
Power semiconductor device comprising a substrate and load current terminal elements
The invention relates to a power semiconductor device with a substrate with a cooling device and power semiconductor components connected thereon, having load current terminal elements and a cooling device. Pressure devices have a pressure element is arranged movably in a direction normal (N) to the substrate, and an elastic deformation element between the pressure element and a load current terminal element. The pressure element presses the assigned load current terminal element against an electrically conductive contact area of the substrate via the elastic deformation element and provides electrically conductive pressure contacting of the assigned load current terminal element with the substrate. The electrical connection of the power semiconductor device is improved.
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/473 - Dispositions pour le refroidissement, le chauffage, la ventilation ou la compensation de la température impliquant le transfert de chaleur par des fluides en circulation par une circulation de liquides
67.
Power electronic switching device, arrangement herewith and methods for producing the switching device
A switching device has a substrate, a power semiconductor component arranged thereon, a connection device and a pressure device. The substrate has conductor tracks electrically insulated from each another. A power semiconductor component is arranged on one of the conductor tracks. The connection device is embodied as a film composite having an electrically conductive film and an electrically insulating film and forming a first and a second main surface. The switching device is connected in a circuit-conforming manner by the connection device, and a contact area of the first main surface of the power semiconductor component is connected to a first contact area of an assigned conductor track of the substrate in a force-locking and electrically conductive manner.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/36 - Emploi de matériaux spécifiés ou mise en forme, en vue de faciliter le refroidissement ou le chauffage, p. ex. dissipateurs de chaleur
H01L 23/40 - Supports ou moyens de fixation pour les dispositifs de refroidissement ou de chauffage amovibles
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H01L 23/42 - Choix ou disposition de matériaux de remplissage ou de pièces auxiliaires dans le conteneur pour faciliter le chauffage ou le refroidissement
The invention relates to a power semiconductor device with a substrate and an electrically conductive DC voltage bus bar system and a capacitor connected to the bus bar system, wherein the power semiconductor device has, for securing the capacitor, a capacitor securing apparatus comprising a receptacle device for receiving the capacitor, in which at least part of the capacitor is arranged. Electrically conductive bus bar system terminal elements are electrically connected thereto and run in the direction of the substrate. An elastic first deformation element is materially bonded to the capacitor securing apparatus and is formed from an elastomer is arranged on the side of the capacitor securing apparatus facing the DC voltage bus bar system. The device is embodied in such a way that the capacitor securing apparatus, via the deformation element, presses the DC voltage bus bar system in the direction of the substrate and thereby presses the bus bar system terminal elements against electrically conductive contact areas of the substrate such that the bus bar system terminal elements are electrically conductively pressure-contacted with said contact areas of the substrate.
H01L 23/49 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes formées de structures soudées du type fils de connexion
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H05K 7/14 - Montage de la structure de support dans l'enveloppe, sur cadre ou sur bâti
G11C 11/00 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants
H01L 23/36 - Emploi de matériaux spécifiés ou mise en forme, en vue de faciliter le refroidissement ou le chauffage, p. ex. dissipateurs de chaleur
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
69.
Power electronic switching device and power semiconductor module therewith
A switching device and a power semiconductor module are configured with a substrate, a power semiconductor component arranged thereupon and with a load connection device. The substrate incorporates mutually electrically-insulated printed conductors and wherein the load connection device, preferably for an AC potential, comprises at least two partial connection devices, having mutually corresponding contact surfaces and being interconnected in an force-fitted or materially-bonded manner and, on the contact surfaces, an electrically conductive manner, wherein a first partial connection device has a first contact device, which is force-fitted or materially-bonded to the printed conductor of the substrate, and wherein a second partial connection device has a second contact device for the further, preferably external, connection of a load connection device.
G05F 1/56 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final
H01L 21/52 - Montage des corps semi-conducteurs dans les conteneurs
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p. ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
H01L 23/051 - ConteneursScellements caractérisés par la forme le conteneur étant une structure creuse ayant une base conductrice qui sert de support et en même temps de connexion électrique pour le corps semi-conducteur une autre connexion étant constituée par le couvercle parallèle à la base, p. ex. du type "sandwich"
H02M 1/00 - Détails d'appareils pour transformation
70.
Power electronics arrangement and vehicle with said arrangement
A power electronics arrangement has a power semiconductor module, with a contact spring, with a load connecting element and with a mounting device which is embodied as part of an electrically operated vehicle. The power semiconductor module has a load connection element which preferably projects outwards from the interior of the power semiconductor module, and preferably has there a first external contact face for external connection, and the load-connecting element has a second contact face. An electrically conductive pressure contact connection is embodied between the first contact face and the second contact face by a contact spring, wherein the pressure on the contact spring which is necessary for this is implemented by connecting the power semiconductor module in a frictionally locking fashion to the mounting device.
A power semiconductor device has a metal molded body forming a first connecting conductor. From a first main surface of the metal molded body there is a first recess having a first base in which a first power semiconductor component is arranged which faces the first base and is connected in an electrically conductive manner. From a second main surface of the metal molded body, a second recess has a second base, and a second power semiconductor component is arranged with the first contact surface thereof associated with the second base connected in an electrically conductive manner to this base. An insulating material layer is on both main surfaces, filling and completely covering the recess, wherein the first insulating layer has an electrically conductive first via which connects a second contact surface of the first power semiconductor component in an electrically conductive manner to a first conducting surface arranged on the first insulating layer.
H01L 23/427 - Refroidissement par changement d'état, p. ex. caloducs
H01L 23/06 - ConteneursScellements caractérisés par le matériau du conteneur ou par ses propriétés électriques
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 23/528 - Configuration de la structure d'interconnexion
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
72.
APPARATUS, METHOD AND SYSTEM FOR THE NON-HOMOGENEOUS COOLING OF A FLAT OBJECT
The apparatus according to the invention serves for the non-homogeneous cooling of a flat object having a first main surface and, opposite this, a second main surface. In this context, the flat object is selectively cooled from the direction of the first main surface by means of a cooling device, the cooling device having a cavity which is designed to be flowed through by cooling fluid, this being understood as also encompassing other cooling media, and which is bounded on that side oriented toward the flat surface by an elastic membrane. In this context, a thermally conductive body is assigned to this elastic membrane, this thermally conductive body being designed to be in thermal contact, via a heat take-up surface, with a part surface of the first main surface of the flat object, and, via a heat discharge surface, with the cooling fluid, whereby the second main surface and in particular the solder of the flat object, which is therebetween, has a non-homogeneous temperature distribution during the cooling procedure, at least in a partial timespan of the cooling.
H01L 23/473 - Dispositions pour le refroidissement, le chauffage, la ventilation ou la compensation de la température impliquant le transfert de chaleur par des fluides en circulation par une circulation de liquides
C21D 11/00 - Commande ou régulation du processus lors de traitements thermiques
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
A connecting arrangement for a three-level converter arrangement includes a first to third connection rail which are each in the form of a shaped metal body. The respective connection rail has a line section and a connection section which has a connection means. The respective connecting rail has a line section and a connecting section which, for its part, has an associated respective connecting means. The respective connection means forms, with the connecting means, a force-fitting, electrically conductive connection. The connection rails are connected to the connecting rails with the correct polarity. The respective line sections of the connection rails and the connecting rails are situated one above the other in a stack, wherein the first connecting section, in projection in the normal direction of the first connection section, covers the first connection section; wherein the second connecting section, in projection in the normal direction of the second connection section, covers the first connection section and the second connection section, and wherein the third connecting section, in projection in the normal direction of the third connection section, covers the second connection section and the third connection section.
A centering holding device for a Rogowski coil. The holding device comprises a virtual axis; a first cutout running from a first main side to a second main side thereof through the holding device and is arranged centrally with respect to the axis. The holding device has a channel in the shape of a circle arc around the axis and around the first cutout from a first channel opening to a second channel opening. The first cutout and the channel are coaxial relative to the axis of the holding device. The holding device has a second cutout, which leaves out an edge region of the holding device. The first and second channel openings lead into the second cutout. Furthermore, the invention relates to a method for arranging a Rogowski coil by the holding device.
G01R 15/18 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs inductifs, p. ex. des transformateurs
G01R 1/04 - BoîtiersOrganes de supportAgencements des bornes
75.
Apparatus for the material-bonded connection of connection partners of a power-electronics component
A pressing ram having an elastic cushion element and intended for the material-bonded press-sintering connection of a first connection partner to a second connection partner of a power-electronics component. The elastic cushion element of the pressing ram is enclosed by a dimensionally stable frame, within which the cushion element and a guide part of the pressing ram are guided for linear movement such that the dimensionally stable frame lowers onto the first connection partner, or a workpiece carrier with the first connection partner arranged therein, and, following abutment against the same, the pressing ram together with the elastic cushion element is lowered onto the second connection partner and the elastic cushion exerts a pressure necessary for connecting the first connection partner to the second connection partner.
B23K 37/00 - Dispositifs ou procédés auxiliaires non spécialement adaptés à un procédé couvert par un seul des autres groupes principaux de la présente sous-classe
B23K 20/00 - Soudage non électrique par percussion ou par une autre forme de pression, avec ou sans chauffage, p. ex. revêtement ou placage
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
B23K 20/02 - Soudage non électrique par percussion ou par une autre forme de pression, avec ou sans chauffage, p. ex. revêtement ou placage au moyen d'une presse
B23K 20/10 - Soudage non électrique par percussion ou par une autre forme de pression, avec ou sans chauffage, p. ex. revêtement ou placage utilisant des vibrations, p. ex. soudage ultrasonique
An arrangement having a DC-voltage busbar and a power component. The power component has two flat DC-voltage connection conductors, each with a contact section and arranged closely adjacent to one another. Each connection conductor has a clamping section beside the respective contact section in the direction of current flow. The busbar has two partial busbars, each with a contact section and arranged closely adjacent to one another. Each partial busbar has a clamping section beside the respective contact section in the direction of current flow. The contact section of at least one connection conductor is electrically connected to the contact section of the associated partial busbar by connecting the clamping sections of the connection conductor to the clamping section of the partial busbars in a flat and force-fitting manner above one another and the respective contact sections therefore lying directly flat on one another.
H01L 23/473 - Dispositions pour le refroidissement, le chauffage, la ventilation ou la compensation de la température impliquant le transfert de chaleur par des fluides en circulation par une circulation de liquides
H01R 25/16 - Rails ou barres omnibus pourvus de plusieurs points de connexion pour pièces complémentaires
A power electronics module having a base plate, a circuit carrier arranged on the base plate and a plurality of conductor tracks which are electrically insulated from the base plate. A power semiconductor component is arranged on one of the conductor tracks, and has a load connection element. In this case, the base plate has a substantially continuous first recess and the circuit carrier has a substantially continuous second recess, wherein the first and second recesses are arranged such that they are in alignment with one another. The load connection element has a first contact device which is in electrically conductive contact with a contact area of that side of the conductor track which is averted from the base plate, a second contact device for externally making contact with the circuit carrier, and a connecting section, which extends through the first and second recesses, between the first and second contact devices.
H05K 7/20 - Modifications en vue de faciliter la réfrigération, l'aération ou le chauffage
H05K 7/14 - Montage de la structure de support dans l'enveloppe, sur cadre ou sur bâti
H01L 23/367 - Refroidissement facilité par la forme du dispositif
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 23/043 - ConteneursScellements caractérisés par la forme le conteneur étant une structure creuse ayant une base conductrice qui sert de support et en même temps de connexion électrique pour le corps semi-conducteur
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/473 - Dispositions pour le refroidissement, le chauffage, la ventilation ou la compensation de la température impliquant le transfert de chaleur par des fluides en circulation par une circulation de liquides
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
78.
Power semiconductor circuit having a field effect transistor with low energy losses
A power semiconductor circuit comprising a field effect transistor having a drain, a source and a gate as terminals, and further comprising a control device having a drive device and an undervoltage detection circuit. The drive device drives the field effect transistor and is electrically connected to the gate of the field effect transistor. The undervoltage detection circuit generates an undervoltage detection signal if a power semiconductor voltage present between the drain and the source of the field effect transistor falls below a specific voltage value. The drive device switches on the field effect transistor when a switch-on command for switching on the field effect transistor and the undervoltage detection signal are present. The invention provides a power semiconductor circuit with low energy loss.
H02M 1/32 - Moyens pour protéger les convertisseurs autrement que par mise hors circuit automatique
H02M 7/5387 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs, p. ex. onduleurs à impulsions à un seul commutateur dans une configuration en pont
H03K 17/082 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension par réaction du circuit de sortie vers le circuit de commande
G01R 19/165 - Indication de ce qu'un courant ou une tension est, soit supérieur ou inférieur à une valeur prédéterminée, soit à l'intérieur ou à l'extérieur d'une plage de valeurs prédéterminée
79.
DEVICE, METHOD, AND SYSTEM FOR COOLING A FLAT OBJECT IN A NONHOMOGENEOUS MANNER
The device according to the invention is used to cool a flat object (2) with a first main surface (200) and a second main surface (202) lying opposite the first main surface in a nonhomogeneous manner. The flat object is cooled from the direction of the first main surface by a cooling device (1). A heating device (4) locally acts on a first sub-surface (204) of the second main surface such that the flat object is supplied with heat at said first sub-surface relative to a second sub-surface (206) adjoining the first sub-surface in such a manner that the first sub-surface is cooled slower than the second sub-surface, and thus the second main surface of the flat object has a nonhomogeneous temperature distribution at least during a sub-time period of the cooling process.
B23K 37/00 - Dispositifs ou procédés auxiliaires non spécialement adaptés à un procédé couvert par un seul des autres groupes principaux de la présente sous-classe
C21D 11/00 - Commande ou régulation du processus lors de traitements thermiques
80.
Arrangement with a power semiconductor module, having a DC-voltage busbar and a capacitor
An arrangement comprising a power semiconductor module, a capacitor, a DC-voltage busbar and a connection device. The module has two flat DC-voltage connection conductors each having a contact section. The DC-voltage connection conductors are arranged closely adjacent to one another on and close to the respective contact sections in the normal direction. The capacitor has two flat capacitor connection conductors each having a contact section. The DC-voltage busbar has two partial busbars each having a contact section. The connection device has a yoke with a die and a bearing. The respective contact sections of the DC-voltage connection conductors are clamped flat above one another between the die and the bearing. The contact sections, of the capacitor or the DC-voltage busbar, are arranged closely adjacent to one another on and close to the respective contact sections in the normal direction, and are thus force-fittingly and electrically conductively connected to one another.
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
H02M 7/00 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant continuTransformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif
H05K 7/02 - Dispositions de composants de circuits ou du câblage sur une structure de support
H05K 7/12 - Moyens élastiques ou moyens de serrage pour fixer un composant à la structure de l'ensemble
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
81.
COOLING DEVICE AND METHOD FOR COOLING DOWN LIQUID SOLDER FOR PRODUCING A SOLDERED CONNECTION
The invention relates to a cooling device for cooling down liquid solder (4) for producing a soldered connection between a first and a second element (2, 3), between which the liquid solder (4) is arranged, wherein the cooling device (1) has an evacuable chamber (17), arranged in which are a plate (11) and, below the plate (11), a heat sink (16, 16’), wherein the plate (11) is provided with clearances (12) that are kept at a distance from an outer edge (26) of the plate (11) and pass through from an upper side (13) to an underside (14) of the plate (11), wherein the plate (11) is intended for an underside (15) of the first element to lie on the upper side (13) of the plate (11) during the operation of the cooling device (1), wherein the plate (11) and the clearances (12) are arranged between the first element (2) and the heat sink (16, 16’), wherein the heat sink (16, 16’) acts with a directly cooling effect on the underside (14) of the plate (11) and, in the regions of the clearances (12), on the underside (15) of the first element (2). The invention also relates to a related method for cooling down liquid solder for producing a soldered connection.
A method for producing a power electronic switching device comprising a substrate, having a power semiconductor component arranged thereon; a connection device, and terminal devices. The method comprises: Providing the substrate with an insulation ply and conductor tracks electrically insulated from one another, wherein a power semiconductor component is arranged on a conductor track and is cohesively connected thereto; Arranging the connection device embodied as a film stack; Arranging a thin pressure- and temperature-resistant and moisture-blocking insulation layer along a surface contour of the connection device and comprising a covering section and an overlap section, which overlaps the connection device circumferentially and covers the substrate in a circumferential contact region; Cohesively connecting the connection device to the substrate, whereby the connection device connects the switching device in a circuit-conforming manner internally; Connecting the covering section to the connection device; Connecting the overlap section to the contact region.
H05K 3/32 - Connexions électriques des composants électriques ou des fils à des circuits imprimés
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
H05K 3/10 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/367 - Refroidissement facilité par la forme du dispositif
83.
Power semiconductor module with switching device and assembly
A power semiconductor module and an arrangement including it. The module includes a housing, a switching device having a substrate connected to the housing, a connecting device, load connection devices and a pressure device movable relative to the housing. The substrate has a first central passage and conductor tracks which are electrically insulated from one another. A power semiconductor component sits on a conductor track. The connecting device has two main surfaces and an electrically conductive film. The pressure device has a pressure body with a second passage, in alignment with the first passage and a first recess. A pressure element projects out of the recess, and presses onto a section of the second main surface. This section is within the surface of the component projects normal to the substrate. The first and second passages receive a fastener which force-fittingly fastens the module to the cooling device.
H05K 7/20 - Modifications en vue de faciliter la réfrigération, l'aération ou le chauffage
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/367 - Refroidissement facilité par la forme du dispositif
H01L 23/043 - ConteneursScellements caractérisés par la forme le conteneur étant une structure creuse ayant une base conductrice qui sert de support et en même temps de connexion électrique pour le corps semi-conducteur
H01L 23/29 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par le matériau
H01L 23/40 - Supports ou moyens de fixation pour les dispositifs de refroidissement ou de chauffage amovibles
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H01L 23/13 - Supports, p. ex. substrats isolants non amovibles caractérisés par leur forme
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
84.
Converter arrangement with a capacitor arrangement
A power converter arrangement comprising: a housing having first and second chambers separated by a separating body; a power semiconductor module; and a device. The capacitor is electrically conductively connected to power semiconductor module by a connecting device. Power semiconductor module, the connecting device and connection elements of the capacitor are arranged in first chamber. The capacitor reaches through the separating body between the first and second chambers into second chamber for cooling of the capacitor. The separating body has a first cutout through which the capacitor reaches. A flat, elastic sealing body which runs peripherally around the first cutout and reaches into the region of the first cutout and surrounds the capacitor there in sealing fashion, is arranged on a surface of the separating body. A pressing body presses the sealing body against the separating body and terminates in sealing fashion there.
A power semiconductor device comprising: a body, a substrate and power semiconductor components arranged on and connected to the substrate. The device has electrically conductive load connection elements and an integrally formed housing which runs laterally around the components. The body has a main outer surface which runs laterally around the components and which is at least partially covered by an elastic, electrically nonconductive, integrally formed, structured sealing element which runs laterally around the components. A section of the sealing element is arranged between the housing and the main outer surface of the body. The housing and the main outer surface of the body are pressed against the sealing element, which seals off the housing from the main outer surface of the body. The invention provides a compact device whose load connection elements are reliably electrically insulated from the body and whose housing is reliably sealed off from the body.
(1) Computerized on line ordering services featuring the wholesale and retail of electronic components, namely power transformers, voltage converters, voltage regulators, semiconductor devices, semiconductor components, discrete and integrated semiconductor devices, transistors, bipolar transistors, field-effect transistors, power transistors, diodes, power diodes, thyristors, power thyristors, power semiconductor modules, power semiconductor modules with power semiconductor components, power semiconductor modules with pressure devices for electrical contacting of substrates, connecting elements and power semiconductor devices, power semiconductor modules with printing devices for thermal bonding of substrates, connecting elements for power semiconductor devices, unit converters with power semiconductor modules , electrical and electronic components and power converter systems built from the unit converters; the operation of a website for the sale of electronic components , namely power transformers, voltage converters, voltage regulators, semiconductor devices, semiconductor components, discrete and integrated semiconductor devices, transistors, bipolar transistors, field-effect transistors, power transistors, diodes, power diodes, thyristors, power thyristors, power semiconductor modules, power semiconductor modules with power semiconductor components, power semiconductor modules with pressure devices for electrical contacting of substrates, connecting elements and power semiconductor devices, power semiconductor modules with printing devices for thermal bonding of substrates, connecting elements for power semiconductor devices, unit converters with power semiconductor modules, electrical and electronic components and power converter systems built from the unit converters.
(1) Computerized on line ordering services featuring the wholesale and retail of electronic components, namely power transformers, voltage converters, voltage regulators, semiconductor devices, semiconductor components, discrete and integrated semiconductor devices, transistors, bipolar transistors, field-effect transistors, power transistors, diodes, power diodes, thyristors, power thyristors, power semiconductor modules, power semiconductor modules with power semiconductor components, power semiconductor modules with pressure devices for electrical contacting of substrates, connecting elements and power semiconductor devices, power semiconductor modules with printing devices for thermal bonding of substrates, connecting elements for power semiconductor devices, unit converters with power semiconductor modules , electrical and electronic components and power converter systems built from the unit converters; the operation of a website for the sale of electronic components , namely power transformers, voltage converters, voltage regulators, semiconductor devices, semiconductor components, discrete and integrated semiconductor devices, transistors, bipolar transistors, field-effect transistors, power transistors, diodes, power diodes, thyristors, power thyristors, power semiconductor modules, power semiconductor modules with power semiconductor components, power semiconductor modules with pressure devices for electrical contacting of substrates, connecting elements and power semiconductor devices, power semiconductor modules with printing devices for thermal bonding of substrates, connecting elements for power semiconductor devices, unit converters with power semiconductor modules, electrical and electronic components and power converter systems built from the unit converters
An actuating circuit having a primary-side circuit part with an actuating logic circuit and a primary-side reference potential, and four secondary-side circuit parts each having one driver stage designed for actuating a phase of a three-level inverter and a first to fourth semiconductor switch, wherein each semiconductor switch and the secondary-side circuit part assigned thereto has a respective first to fourth secondary-side reference potential, and wherein in each case a level shifter connects the primary-side circuit part to the respective secondary-side circuit part and thus is assigned in each case to both circuit parts. In this connection, the primary-side reference potential corresponds to the first secondary-side reference potential. Furthermore, at least the actuating logic circuit, the first and second level shifters and the first and second driver stages are monolithically integrated.
H02M 7/537 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs, p. ex. onduleurs à impulsions à un seul commutateur
H03K 17/687 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
H03K 17/689 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ avec une isolation galvanique entre le circuit de commande et le circuit de sortie
A power semiconductor device comprising a first housing having a cutout with an opening, and a second housing. The device has a load element having external and internal sections, and a feedthrough section pressing through the opening. The feedthrough section has a first outer edge region which tapers laterally towards a first outer edge thereof and a second outer edge region which tapers laterally towards a second outer edge thereof. The first and second outer edge regions face away from one another. The first outer edge is near the lateral first end of the opening and the second outer edge is near the lateral second end of the opening. A first seal is positioned between the first housing and the feedthrough section and a second seal is positioned between the second housing and the feedthrough section. The seals contact one another laterally from the first and second outer edges.
H05K 5/00 - Enveloppes, coffrets ou tiroirs pour appareils électriques
H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés
H01L 23/10 - ConteneursScellements caractérisés par le matériau ou par la disposition des scellements entre les parties, p. ex. entre le couvercle et la base ou entre les connexions et les parois du conteneur
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 23/057 - ConteneursScellements caractérisés par la forme le conteneur étant une structure creuse ayant une base isolante qui sert de support pour le corps semi-conducteur les connexions étant parallèles à la base
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H01L 23/055 - ConteneursScellements caractérisés par la forme le conteneur étant une structure creuse ayant une base isolante qui sert de support pour le corps semi-conducteur les connexions ayant un passage à travers la base
A 3-level power converter device with power semiconductor components including a first direct voltage positive potential terminal, a first direct voltage negative potential terminal, and first and second neutral voltage potential terminals. The first and second neutral voltage potential terminals are electrically conductively connected. The first direct voltage positive potential terminal and the first neutral voltage potential terminal form a first terminal pair, and the second neutral voltage potential terminal and the first direct voltage negative potential terminal form a second terminal pair. The first and second terminal pairs are arranged one behind another in a second direction. The first direct voltage positive potential terminal and the first neutral voltage potential terminal are arranged one above another in a third direction, and the second neutral voltage potential terminal and the first direct voltage negative potential terminal are arranged one above another in the third direction.
H01R 9/22 - Socles, p. ex. barrette, bloc, panneau
H01R 13/652 - Dispositions de protection par mise à la terre ou par blindage sur les dispositifs de couplage avec broche, lame ou alvéole de mise à la terre
H05K 7/14 - Montage de la structure de support dans l'enveloppe, sur cadre ou sur bâti
H05K 7/02 - Dispositions de composants de circuits ou du câblage sur une structure de support
A switching device having a substrate, a power semiconductor component, a connecting device, load connection devices and a pressure device. Substrate has electrically insulated conductor tracks. A power semiconductor component is arranged on a conductor track. Connecting device is formed as a film composite having an electrically conductive film and an electrically insulating film, and has first and second main surfaces. Switching device is connected in an internally circuit-conforming manner by connecting device. The pressure device has a pressure body with a first recess, a pressure element being arranged so that it projects out of the recess, wherein the pressure element presses onto a section of the second main surface of film composite and, in this case, the section is arranged within the surface of the power semiconductor component in projection along the normal direction of the power semiconductor component.
H01L 23/367 - Refroidissement facilité par la forme du dispositif
H01L 23/433 - Pièces auxiliaires caractérisées par leur forme, p. ex. pistons
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
H01L 23/498 - Connexions électriques sur des substrats isolants
92.
Power semiconductor module and method of manufacturing a power semiconductor
A power semiconductor module, and method for its manufacture, comprising a first housing part having a cutout and a DC voltage load connection apparatus forming a structural unit, wherein the DC voltage load connection apparatus has first and second DC voltage load connection elements. The first DC voltage load connection element has a first leadthrough section arranged in the cutout, and the second DC voltage load connection element has a second leadthrough section arranged in the cutout forming a gap therebetween. The first and second leadthrough sections are sheathed by an elastomer, which fills the gap, is cohesively connected to the first and second leadthrough sections and seals off the first and second leadthrough sections with respect to the first housing part. The inventive power semiconductor module exhibits a high resistance to thermal cycling, and the distance between the DC voltage load connection elements can be configured to be small.
09 - Appareils et instruments scientifiques et électriques
35 - Publicité; Affaires commerciales
Produits et services
Semiconductor apparatus; Digital, analogue and mixed-signal integrated circuits (ICs) and application-specific integrated circuits (ASICS); Semiconductor sensors, semiconductor sensors for measuring of light intensity, current, voltage, electric resistance, acceleration; Semiconductor actuators; Light-emitting semiconductor components, LEDs, laser diodes, including all in integrated form; Semiconductor switches, bipolar and field effect semiconductor switches, diodes, thyristors, transistors; Power semiconductor components, Power diodes, power thyristors, power transistors; Semiconductor components formed from single semiconductors, VI-VI compound semiconductors, III-V compound semiconductors, II-VI compound semiconductors, in particular of silicon, graphene, silicon carbide, gallium arsenide; Organic semiconductor elements. Advertising, business management, all being in relation to semiconductor components and the production thereof, in particular for integrated circuits, semiconductor sensors, power semiconductor components.
A power component device includes a heat sink having a recess with a base surface and a first side surface. The first side surface of the recess is at a generally acute angle relative to the base surface. The power component device includes a first passive electrical component with a support element, having a first side surface which faces the first side surface of the recess, and is at generally the same angle relative to the base surface as the first side surface of the recess is relative to the base surface. A pressure transmission element has a first side surface which is averted from the first side surface of the support element. The base surface is at a generally acute angle relative to the first pressure transmission element side surface. A pressure generating apparatus presses the support element against the first side surface of the recess.
A power semiconductor module comprising a substrate. The power semiconductor module has first and second DC voltage load current connection elements and first and second power semiconductor components. The first and second power semiconductor components are arranged along a lateral first direction of the substrate. The power semiconductor module has a foil composite having a first metallic foil layer and a structured second metallic foil layer and an electrically insulating foil layer arranged between the first and second metallic foil layers. The first power semiconductor component and the second power semiconductor component are electrically conductively connected to the foil composite and to the substrate. The first and second power semiconductor components are arranged on a common side in relation to the first and second DC voltage load current connection elements. The invention provides a power semiconductor module having a particularly low-inductance construction.
H01L 23/52 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre
H01L 23/482 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes formées de couches conductrices inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
A power electronic system with a cooling device, and a method for producing the system, comprising a plurality of submodules, each submodule having a first planar insulating material body, one first conductor track cohesively connected thereto, one power switch arranged on the conductor track, at least one internal connecting device composed of an alternate layer sequence of at least one electrically conductive film and at least one electrically insulating film, wherein at least one electrically conductive layer forms at least one second conductor track, and comprising external connection elements. In this case, the submodules are arranged cohesively or in a force-locking manner and in a manner spaced apart from one another with their first main surface on the cooling device. At least one second conductor track at least partially covers first conductor tracks of two submodules, electrically connects them to one another and covers an interspace between the submodules.
H05K 7/20 - Modifications en vue de faciliter la réfrigération, l'aération ou le chauffage
H01L 23/34 - Dispositions pour le refroidissement, le chauffage, la ventilation ou la compensation de la température
H01L 23/18 - Matériaux de remplissage caractérisés par le matériau ou par ses propriétes physiques ou chimiques, ou par sa disposition à l'intérieur du dispositif complet
H01L 23/36 - Emploi de matériaux spécifiés ou mise en forme, en vue de faciliter le refroidissement ou le chauffage, p. ex. dissipateurs de chaleur
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
A power semiconductor system and method for producing a power semiconductor system. In one embodiment, the application relates to a power semiconductor system, comprising a line system for a fluid working medium; wall element having an outer side and an inner side; and a power semiconductor circuit arranged at the outer side of the wall element, wherein the inner side of the wall element forms a fluid-tight wall of the line system.
A method for the repetitive transmission of a signal representing a binary value via a transformer section of a driver of a power semiconductor. Transmitting for the first value a first pulse packet as a sequence of a positive pulse and a negative pulse or for the second value a second pulse packet as a sequence of a negative pulse and a positive pulse to the input of the transformer. The respective pulse packets are repetitively fed to the transformer, one of the first value and the second value is detected at the output of the transformer from the sequence of the polarity of an output variable within a transmitted pulse packet.
H03B 1/00 - PRODUCTION D'OSCILLATIONS, DIRECTEMENT OU PAR CHANGEMENT DE FRÉQUENCE, À L'AIDE DE CIRCUITS UTILISANT DES ÉLÉMENTS ACTIFS QUI FONCTIONNENT D'UNE MANIÈRE NON COMMUTATIVEPRODUCTION DE BRUIT PAR DE TELS CIRCUITS Détails
H03K 3/00 - Circuits pour produire des impulsions électriquesCircuits monostables, bistables ou multistables
The invention, which relates to a method for regulating a centre voltage, is based on the object of specifying a method which implements simplified centre regulation, allows a reduction in the outlay of hardware and software components and hence can be used inexpensively. This object is achieved by measuring the intermediate circuit capacitor voltages and ascertaining the centre voltage from these measured voltages, and taking the position of the centre voltage as a basis for shifting the timing of the switch-on and/or switch-off edges of the switching voltage, the absolute value and direction of the shift being dependent on the position of the centre voltage.
H02M 7/527 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type thyratron ou thyristor exigeant des moyens d'extinction utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la forme d'onde ou de la fréquence de sortie par modulation de largeur d'impulsions
A solar module has a solar cell which generates a DC voltage. The module has a converter for converting a DC voltage fed into its input. The module contains a semiconductor switch and a controller which drives a switching input of the semiconductor switch. The controller drives the semiconductor switch variably so that the semiconductor switch switches more slowly during the transition operation than during normal operation, thereby reducing a dynamic overvoltage on the switch such that the voltage present on the switch does not exceed the blocking voltage of the switch.
H02M 3/335 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
H02M 7/537 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs, p. ex. onduleurs à impulsions à un seul commutateur
