In a printing apparatus, web paper is transported by guide rollers and path changing rollers to a printing face contact roller in a swirling form. In a first section, the web paper is heated and dried by heating units facing thereto. The path changing rollers change and bypass a path of the web paper in a second section, downstream of the first section, and thus the path of the web paper in the second section is made longer. In the first section, since the web paper is heated and dried by the heating units, the web paper in the second section has the highest temperature. Therefore, by making the web paper longer in the second section, the web paper can be dried more efficiently in the second section. This results in enhanced drying efficiency of the web paper without increasing energy required for drying.
In the present invention, a coating device is provided with a nozzle block and a pressure adjustment block. The nozzle block has a slit-like discharge port extending in a first direction. The nozzle block moves in a second direction intersecting the first direction relative to the substrate during a coating process of the substrate. The pressure adjustment block has a slit-like gas jetting port extending in the first direction, and is connected to the nozzle block. The pressure adjustment block supplies, through the gas jetting port to a follow-up space, a gas supplied from a gas supply system, and sets the pressure in the follow-up space higher than that in another space. The follow-up space extends below the nozzle block in a third direction opposite to the second direction with respect to the discharge port.
B05C 11/06 - Appareils pour étaler ou répartir des liquides ou d'autres matériaux fluides déjà appliqués sur une surfaceRéglage de l'épaisseur du revêtement comportant un soufflage de gaz ou vapeur
B05C 5/02 - Appareillages dans lesquels un liquide ou autre matériau fluide est projeté, versé ou répandu sur la surface de l'ouvrage à partir d'un dispositif de sortie en contact, ou presque en contact, avec l'ouvrage
B05C 9/12 - Appareillages ou installations pour appliquer des liquides ou d'autres matériaux fluides aux surfaces par des moyens non prévus dans l'un des groupes , ou dans lesquels le moyen pour déposer le liquide ou autre matériau fluide n'est pas important pour appliquer un liquide ou autre matériau fluide et exécuter une opération auxiliaire l'opération auxiliaire étant exécutée après l'application
B05C 11/10 - Stockage, débit ou réglage du liquide ou d'un autre matériau fluideRécupération de l'excès de liquide ou d'un autre matériau fluide
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
In a printing device according to the present invention, a supply tank and a second bypass pipe are respectively connected to one end and the other end of a manifold space of a supply-side manifold unit, and connected therebetween is a supply pipe that connects the supply-side manifold unit and a print head. Further, a collection tank and a first bypass pipe are respectively connected to one end and the other end of a manifold space of a collection-side manifold unit, and connected therebetween is a collection pipe that connects the print head and the collection-side manifold unit. As a result of reducing the flow path length and increasing the flow rate, it is possible to increase the temperature of ink in a short time.
B41J 2/01 - Machines à écrire ou mécanismes d'impression sélective caractérisés par le procédé d'impression ou de marquage pour lequel ils sont conçus caractérisés par la mise en contact sélective d'un liquide ou de particules avec un matériau d'impression à jet d'encre
B41J 2/17 - Machines à écrire ou mécanismes d'impression sélective caractérisés par le procédé d'impression ou de marquage pour lequel ils sont conçus caractérisés par la mise en contact sélective d'un liquide ou de particules avec un matériau d'impression à jet d'encre caractérisés par la manipulation de l'encre
A printing system according to the present invention comprises: a printing device including a printing mechanism for executing a printing process and a housing that houses the printing mechanism; an imaging unit that can be attached to and detached from the housing; an image processing unit that executes image processing of the image captured by the imaging unit; and a communication unit that outputs the image generated by the image processing unit to the outside via a communication line. In the housing, installation points set as positions for attaching the imaging unit are provided at a plurality of places in advance. The image processing unit executes, as the image processing, an obscuration process in which partial areas of the image captured by the imaging unit are set as target areas and the visibility of an object being imaged in the target areas is eliminated, and the target areas are set individually in advance in accordance with the installation points. The communication unit outputs the image following the obscuration process as an output image.
B41J 29/38 - Entraînements, moteurs commandes ou dispositifs d'arrêt automatiques pour le mécanisme d'impression tout entier
B41J 2/01 - Machines à écrire ou mécanismes d'impression sélective caractérisés par le procédé d'impression ou de marquage pour lequel ils sont conçus caractérisés par la mise en contact sélective d'un liquide ou de particules avec un matériau d'impression à jet d'encre
G03G 21/00 - Dispositions non prévues dans les groupes , p. ex. nettoyage, élimination des charges résiduelles
G06F 3/12 - Sortie numérique vers une unité d'impression
H04N 1/00 - Balayage, transmission ou reproduction de documents ou similaires, p. ex. transmission de fac-similésLeurs détails
This film thickness measurement method, which is a method for measuring the thickness of a metal film, comprises a first step, a second step, and a third step. In the first step, a surface color, which is a color exhibited by the surface of the metal film, is measured. In the second step, the color distance is determined using the surface color. In the third step, the film thickness is determined by applying the color distance obtained in the second step to a metal film thickness-color distance relationship set on a per-metal type basis, the metal type being the type of metal.
In the present invention, a slit-like discharge port is formed in a substrate-facing surface that is positioned at the lower end of a nozzle block. During a process for coating a substrate, in a state in which the upper surface of the substrate and the substrate-facing surface face each other, the nozzle block moves in a space above the substrate in one direction while discharging a treatment liquid from the discharge port. In the outer edge of the substrate, a portion that is positioned closest to the nozzle block when the nozzle block moves away from the substrate is defined as a first portion. Provided in the vicinity of the first portion of the substrate is a gap formation member that forms a gap (fluid passage) between the gap formation member and the first portion of the substrate. A substrate treatment device includes a suction device for sucking an atmosphere in the space (upper space) above the substrate into a space (lower space) below the substrate through the gap.
B05C 5/02 - Appareillages dans lesquels un liquide ou autre matériau fluide est projeté, versé ou répandu sur la surface de l'ouvrage à partir d'un dispositif de sortie en contact, ou presque en contact, avec l'ouvrage
B05C 11/10 - Stockage, débit ou réglage du liquide ou d'un autre matériau fluideRécupération de l'excès de liquide ou d'un autre matériau fluide
7.
PROCESSING LIQUID SUPPLY DEVICE AND PROCESSING LIQUID SUPPLY METHOD
A supply pipe connects an inlet of a storage to a substrate processing apparatus. A circulation pipe connects the substrate processing apparatus to an inlet of the storage. A pump sends out a processing liquid stored in the storage from an outlet to a supply pipe. A liquid drain is provided in the circulation pipe and is configured to be capable of discharging the processing liquid flowing through the circulation pipe. A replenisher is configured to be capable of replenishing the storage with the processing liquid. In a case in which a temperature setting value is changed, a control device brings a temperature of the processing liquid close to a changed setting value by controlling the liquid drain and the replenisher based on a temperature of the processing liquid in the entire circulation path that includes a temperature of the processing liquid flowing through the circulation path.
B08B 3/10 - Nettoyage impliquant le contact avec un liquide avec traitement supplémentaire du liquide ou de l'objet en cours de nettoyage, p. ex. par la chaleur, par l'électricité ou par des vibrations
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
8.
Information Processing Method and Recording Medium
The invention provides a technique capable of effectively reducing leakage of confidential information included in text and appropriately disclosing information to a reader. A confidential-information masking part acquires to-be-processed text that includes an object concept to be concealed. The confidential-information masking part acquires a reader attribute that indicates the attribute of a reader of the to-be-processed text. The confidential-information masking part abstracts, according to the reader attribute, the object concept included in the to-be-processed text by using a conceptual information tree that defines a hierarchical relationship of concepts.
The invention provides a technique capable of effectively reducing leakage of confidential information that is caused when a text generation model outputs text including the confidential information. The information processing method includes a) acquiring input text, b) acquiring an abstracted similar document based on a document registered in a document database, the abstracted similar document being similar to the input text and including confidential information abstracted by abstraction processing, and c) acquiring output text by using a text generation model, the output text being answer text for the input text when the input text and the abstracted similar document have been input, the text generation model being trained to generate answer text based on text and external information associated with the text.
A substrate processing apparatus according to the invention includes a first supplier for supplying a gaseous processing fluid pressurized to a first pressure lower than a critical pressure to a processing chamber, a second supplier for supplying the processing fluid having a second pressure higher than the critical pressure, an introduction flow passage for introducing the processing fluid into an internal space of the processing chamber, a first pipe connecting the first supplier and the introduction flow passage via a first valve, a second pipe connecting the second supplier and the introduction flow passage via a second valve, and a controller for controlling the first valve and the second valve. The second supplier includes a storage storing a liquid processing fluid, and a pressurizer for pressurizing the processing fluid to the second pressure in the second pipe from the storage to the second valve and feeding the processing fluid.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
A substrate processing apparatus according to the invention includes a processing chamber which has an internal space capable of storing the substrate, a supplier which supplies the processing fluid in the form of a liquid, a heater which heats the liquid processing fluid supplied from the fluid supplier to or above a critical temperature of the processing fluid and causing a transition into a supercritical state, a flow passage forming part which forms a flow passage of the processing fluid from the supplier to the processing chamber by way of the heater, a first filter which is disposed in the flow passage between the supplier and the heater and filters the liquid processing fluid and a second filter which is disposed in the flow passage between the heater and the processing chamber and filters the processing fluid in the supercritical state.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
F26B 3/00 - Procédés de séchage d'un matériau solide ou d'objets impliquant l'utilisation de chaleur
12.
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
A substrate processing apparatus includes a processing chamber having an internal space for storing the substrate, a supplier for supplying the processing fluid to the processing chamber, a discharger for discharging the processing fluid from the processing chamber, a controller for changing a pressure of the internal space based on a processing recipe by controlling the supplier and the discharger, a filter provided in an introduction flow passage from the supplier to the processing chamber for filtering the processing fluid, a first detector provided between the supplier and the filter in the introduction flow passage for detecting a flow rate of the processing fluid flowing in the introduction flow passage, and a second detector provided in a discharge flow passage from the processing chamber to the discharger for detecting a flow rate of the processing fluid flowing in the discharge flow passage.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
F26B 5/00 - Procédés de séchage d'un matériau solide ou d'objets n'impliquant pas l'utilisation de chaleur
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
13.
SUSCEPTOR FOR SUPPORTING SUBSTRATE, METHOD OF MANUFACTURING SUSCEPTOR, AND HEAT TREATMENT APPARATUS EQUIPPED WITH SUSCEPTOR
Halogen lamps irradiate a semiconductor wafer held by a susceptor with light to preheat the semiconductor wafer, and thereafter flash lamps irradiate the semiconductor wafer with flashes of light. Processing regions and non-processing regions are provided in a mixed manner in a region of a holding plate of the susceptor which is opposed to a high-temperature region of the semiconductor wafer in a temperature distribution occurring in the semiconductor wafer when the semiconductor wafer is irradiated with light. The processing regions and the non-processing regions have annular shapes arranged alternatingly in a concentric pattern. The processing regions are roughened by a sandblasting process, and the non-processing regions are not processed. This decreases the transmittance of the processing regions to decrease the amount of light impinging on the high-temperature region of the semiconductor wafer, thereby improving the uniformity of an in-plane temperature distribution of the semiconductor wafer.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
The invention relates to a substrate processing method for processing a substrate by a processing fluid in a supercritical state in a processing chamber. The method comprising introducing the processing fluid in the form of a gas pressurized to a first pressure lower than a critical pressure of the processing fluid into an internal space of the processing chamber in which the substrate is accommodated, thereby boosting a pressure in the internal space to the first pressure; and filling the internal space with the processing fluid in the supercritical state by introducing the processing fluid having a second pressure higher than the critical pressure into the internal space having the pressure boosted to the first pressure.
An anti-reflective film is formed on upper and lower surfaces of an upper chamber window which is one quartz part provided between a semiconductor wafer held in a chamber by a holder and flash lamps provided over the chamber. The anti-reflective film is composed of a multi-layer combination of multiple types of dielectric films. The anti-reflective film reduces the reflectance of light in a wavelength range including at least a target wavelength when the target wavelength is a wavelength component such that an intensity relative to a maximum peak which has the highest intensity is not less than 0.1 in a spectrum of the flash lamps. The formation of the anti-reflective film on the upper chamber window made of quartz reduces the reflectance of flashes of light at the upper and lower surfaces of the upper chamber window to suppress the reflection of light at the interfaces.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
16.
HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS FOR HEATING SUBSTRATE BY LIGHT IRRADIATION
A semiconductor wafer transported into a chamber is preheated by halogen lamps. A comparison is made between a target temperature for the preheating and a measured temperature of the semiconductor wafer which is measured by a radiation thermometer immediately before flash irradiation and in the final stage of the preheating using the halogen lamps. Then, when the measured temperature of the semiconductor wafer is outside an allowable range for the preset target temperature, an alarm is issued, and the treatment of the semiconductor wafer being treated is stopped without the flash irradiation. On the other hand, when the measured temperature of the semiconductor wafer is within the allowable range, the flash irradiation process is performed on the semiconductor wafer.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
17.
SUBSTRATE PROCESSING SYSTEM, IMAGE DATA STORAGE METHOD, AND IMAGE SEARCH METHOD
This substrate processing system comprises: a substrate processing unit that has a processing chamber for accommodating a substrate, and that processes the substrate accommodated in the processing chamber; an imaging portion that images the inside of the processing chamber and generates a plurality of images at a set frame rate; an operation control portion that controls the substrate processing unit on the basis of recipe data; and a processing portion that stores the images in a data storage portion on a frame by frame basis. The recipe data defines the operation of the substrate processing unit for each step included in a plurality of steps arranged along a time axis. The plurality of images include a plurality of first images generated in a target period including a timing at which the steps are switched, and a plurality of second images generated in a period outside the target period. The operation control portion or the processing portion executes frame rate adjustment processing for making the frame rate of the second images lower than the frame rate of the first images. The processing portion stores the first images and the second images after the frame rate adjustment processing in the data storage portion.
In the present invention, a first timing at which a first event occurred is determined on the basis of first imaging data (D1) output from an event-based camera (61). A second event that occurs after a predetermined time period is imaged by a high-speed camera (62) on the basis of the first timing. Thus, the second event can be imaged at an appropriate timing using the high-speed camera (62), which can capture images for short time periods.
H04N 23/60 - Commande des caméras ou des modules de caméras
G03B 15/00 - Procédés particuliers pour prendre des photographiesAppareillage à cet effet
H04N 23/45 - Caméras ou modules de caméras comprenant des capteurs d'images électroniquesLeur commande pour générer des signaux d'image à partir de plusieurs capteurs d'image de type différent ou fonctionnant dans des modes différents, p. ex. avec un capteur CMOS pour les images en mouvement en combinaison avec un dispositif à couplage de charge [CCD] pour les images fixes
The purpose of the present invention is to achieve drawing of a high-definition pattern by reducing a beam width in a drawing device. This drawing device comprises: an optical system (42) that guides light from a light source unit (41) onto a substrate (9) along an optical axis; a spatial light modulator (46) that is disposed at a first position conjugate to the surface of the substrate (9) and has a plurality of light modulation elements to be irradiated with light from the light source unit (41); a phase shift mask (51) that is disposed at a second position conjugate to the surface of the substrate (9); and a movement mechanism that moves the laser beam irradiation positions of the plurality of light modulation elements relative to the surface. The phase shift mask (51) is provided with a member that causes a phase difference between light incident on a central part in a predetermined direction perpendicular to the optical axis and light incident on both outer sides of the central part in a light irradiation region corresponding to each of the optical modulation elements, and limits the beam width of the light beam that is modulated by each of the optical modulation elements and applied to the surface of the substrate (9).
This substrate processing device comprises: a first liquid supply section for supplying a first processing liquid to a substrate; a second liquid supply section for supplying a second processing liquid different from the first processing liquid to the substrate; a temperature adjustment unit for adjusting the temperature of a liquid to be heated included in the second processing liquid; a cooling unit for cooling a liquid to be cooled which is the first processing liquid after being supplied to the substrate; and a first supply line for supplying the liquid to be heated from the cooling unit to the temperature adjustment unit. The cooling unit includes a first tank for storing the liquid to be cooled and a heat exchanger that is disposed in the first tank and cools the liquid to be cooled stored in the first tank by circulating the liquid to be heated, which is lower in temperature than the liquid to be cooled. The first supply line supplies the liquid to be heated which has flowed through the heat exchanger and been heated by the liquid to be cooled to the temperature adjustment unit. The temperature adjustment unit adjusts the temperature of the liquid to be heated supplied to the temperature adjustment unit via the first supply line. The second liquid supply unit supplies, to the substrate, the second processing liquid including the liquid to be heated after the temperature thereof has been adjusted by the temperature adjustment unit.
In this substrate processing device, a first nozzle block has a substrate-facing surface. A slit-like discharge port extending in a first direction parallel to a substrate held by a substrate-holding part is formed in the substrate-facing surface. The first nozzle block is moved relative to the substrate by a relative movement part during a coating process carried out on the substrate by a capillary coating method. The first nozzle block has a rear inclined surface extending obliquely upward from the rear end of the substrate-facing surface. The substrate processing device further comprises a pressure control unit. The pressure control unit adjusts the pressure in a rear space which the rear inclined surface of the first nozzle block faces, so as to be lower than that in other spaces.
B05C 5/02 - Appareillages dans lesquels un liquide ou autre matériau fluide est projeté, versé ou répandu sur la surface de l'ouvrage à partir d'un dispositif de sortie en contact, ou presque en contact, avec l'ouvrage
B05C 11/10 - Stockage, débit ou réglage du liquide ou d'un autre matériau fluideRécupération de l'excès de liquide ou d'un autre matériau fluide
23.
PRINTING SYSTEM, HEAD-STATE ESTIMATION METHOD, AND PRINTING DEVICE
The present invention accurately estimates the state of a printing head. An application server (30) that functions as a head-state estimation device is provided with: a first log acquisition unit (31) that acquires, as an extraction log (61a), a log (log including information pertaining to cleaning of printing head) outputted during an extraction period that is a predetermined period; a first cleaning frequency counting unit (32) that counts the number (62) of instances of cleaning for each unit period (for example, one day) in the extraction period on the basis of the extraction log (61a); and a health score calculation unit (36) that calculates a health score (S) which represents the state of the printing head on the basis of results obtained by comparing the number (62) of instances of cleaning for each unit period in the extraction period with a cleaning target determination threshold value (TH (1)) obtained by performing statistical processing on the number (63) of instances of cleaning for each unit period during a previous period before the extraction period.
B41J 2/165 - Prévention du colmatage des ajutages, p. ex. nettoyage, obturation par un capuchon ou humidification des ajutages
B41J 2/01 - Machines à écrire ou mécanismes d'impression sélective caractérisés par le procédé d'impression ou de marquage pour lequel ils sont conçus caractérisés par la mise en contact sélective d'un liquide ou de particules avec un matériau d'impression à jet d'encre
G16Y 40/35 - Gestion des objets, c.-à-d. commande selon une stratégie ou dans le but d'atteindre des objectifs déterminés
24.
SUSCEPTOR FOR SUPPORTING SUBSTRATE, HEAT TREATMENT APPARATUS, AND METHOD OF MANUFACTURING SUSCEPTOR
Halogen lamps irradiate a semiconductor wafer held by a susceptor with light from below to preheat the semiconductor wafer, and thereafter flash lamps irradiate the semiconductor wafer with flashes of light from above. A sandblasting process is performed on processing regions of a lower surface of a holding plate of the susceptor which are located between adjacent ones of a plurality of substrate support pins provided upright on the holding plate to roughen the processing regions. The processing regions are opposed to hot spots appearing when the semiconductor wafer held by the susceptor is irradiated with light. The amount of light directed toward the hot spots when the semiconductor wafer is irradiated with light from the halogen lamps is decreased by the roughened processing regions. This decreases the temperature of the hot spots to improve the uniformity of an in-plane temperature distribution of the semiconductor wafer.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
25.
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
A substrate processing method of the invention includes accommodating a substrate having an upper surface covered with a liquid film and being placed on a support member having a flat plate-like shape in a horizontal position, into an internal space of a processing chamber, filling the internal space with the processing fluid in a supercritical state, and discharging the processing fluid from the internal space. A first ejection port ejects the processing fluid in a horizontal direction toward a space between a bottom surface among wall surfaces of the processing chamber and a lower surface of the support member. Additionally, after an internal pressure of the internal space exceeds a critical pressure of the processing fluid, a second ejection port ejects the processing fluid in a horizontal direction toward a space between a ceiling surface among the wall surfaces and an upper surface of the substrate.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
26.
DATA COLLECTION METHOD, LEARNING METHOD, AND ABNORMALITY PREDICTION METHOD
This data collection method is for collecting sensing data during operation of a device, the method including: (a) a step in which one or more virtual devices (4) corresponding on a one-to-one basis with actual devices (3) are prepared; and (b) a step in which the virtual devices (4) are made to operate under a plurality of operating conditions that can be executed by the actual devices (3), and in which virtual sensing data under each of the operating conditions is collected. The virtual devices (4) each implement an operation equivalent to one of the actual devices (3). The collection of sensing data, operation results, and the like using the virtual devices (4) makes it possible to efficiently collect data such as sensing data and operation results for devices under a plurality of operating conditions without increasing the number of times the actual devices (3) are activated.
As preliminary preparation, from a measured value group (611) of main scanning positions and sub-scanning positions of an object, an appropriate expression indicating the relationship between the main scanning positions and the sub-scanning positions is obtained, and a residual estimator (631) for estimating a residual on the basis of the main scanning position or the like is constructed, the residual being a difference between a sub-scanning position indicated by the measured value group (611) for each main scanning position and a sub-scanning position indicated by the approximate expression. During main scanning of the object, at each time point, an estimated value of the residual is acquired by the residual estimator (631) using the measured value or the like of the main scanning position obtained by a measurement unit (22). Online training is performed using the measured value of the sub-scanning position obtained by the measurement unit (22) and the estimated value of the residual, and the estimated value of a coefficient in the approximate expression is acquired. An approximate value of the sub-scanning position is obtained using the approximate expression to which the estimated value of the coefficient is applied. The estimated position of the sub-scanning position is acquired using the estimated value of the residual and the approximate value, and the position of the object in the sub-scanning direction is corrected.
This substrate processing system comprises: a chamber that stores a substrate to be processed by a processing liquid; an imaging device that captures images of the inside of the chamber at a predetermined frame rate to generate a plurality of frame images; a comparison unit that compares a first frame image among the plurality of frame images with at least one second frame image generated before the first frame image; and a storage unit. Each of the frame images has a plurality of unit regions including at least one pixel. The comparison unit compares the first frame image with the second frame image for each corresponding unit region, and determines whether each of the unit regions is a change region with a change or a non-change region without change. With respect to change regions, the comparison unit causes the storage unit to store, as the first frame image, data of the first frame image. With respect to non-change regions, the comparison unit causes the storage unit to store, as the first frame image, reference values representing the second frame image that is being referred to.
NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM (Japon)
Inventeur(s)
Tanide Atsushi
Nakamura Shohei
Ishikawa Kenji
Abrégé
Provided is an etching device capable of forming, with high throughput, a plurality of through holes in an insulating substrate. This etching device (1) forms a plurality of through holes in an insulating substrate (W). The etching device (1) is provided with a chamber (2), a mask (3), a bias application unit (4), and a plasma generation unit (5). The insulating substrate (W) is carried into the chamber (2). The mask (3) has a plurality of first openings (3a) and faces the insulating substrate (W). The bias application unit (4) applies a negative voltage to the mask (3). The plasma generation unit (5) generates plasma and supplies cations in the plasma to the insulating substrate (W) through the plurality of first openings (31a) of the mask (3).
The present invention provides a substrate processing liquid for etching silicon oxide on a substrate, the substrate processing liquid containing (a) hydrogen fluoride and (b) a monoalkylamine or a monoalkylamine salt. The amount of the hydrogen fluoride is 10 wt% or less, the amount of the monoalkylamine or monoalkylamine salt is 0.0001 wt% to 0.1 wt%, and the monoalkylamine or monoalkylamine salt has a linear alkyl group having 12 to 14 carbon atoms. The substrate processing liquid can efficiently form a narrow space by etching.
The control part has an outside air data acquisition part which acquires outside air data indicating at least the amount of water vapor contained in the outside air and a print image information acquisition part which acquires print image information of an image printed on the printing medium and controls the control target on the basis of the outside air data and the print image information.
B41J 11/00 - Dispositifs ou agencements pour supporter ou manipuler un matériau de copie en feuilles ou en bandes
B41J 2/21 - Machines à écrire ou mécanismes d'impression sélective caractérisés par le procédé d'impression ou de marquage pour lequel ils sont conçus caractérisés par la mise en contact sélective d'un liquide ou de particules avec un matériau d'impression à jet d'encre pour l'impression à plusieurs couleurs
Suppressed is reduction of accuracy of detecting a state of a target even in a case there is a limitation on an imaging direction in which an image of an imaging target can be taken. A state detection method disclosed in the specification of the present application includes: a step of taking an image of at least one imaging target regarding processing of a substrate by an imaging part and outputting the image; a step of applying a filter previously prepared to the image in accordance with the imaging target; and a step of detecting a state of the imaging target based on the image to which the filter is applied, wherein a filter coefficient of the filter applied to the image is corrected based on a positional relationship between the imaging target whose image is taken and the imaging part.
Provided is a substrate information acquisition device capable of accurately acquiring substrate information by visualizing a boundary between a substrate and a background. A camera captures an image of a pattern from a loading/unloading port side. The pattern is asymmetrical at the top and bottom and is linearly inclined at a predetermined angle with respect to the surface of the substrate when viewed from the loading/unloading port. When the shape of the substrate is warped or the like, the pattern is reflected on the surface of the substrate, and a reflection pattern in which the top and bottom are inverted appears. Therefore, the image captured by the camera can be made less susceptible to reflected light or the like on the substrate surface, and a boundary between the substrate and the background can be visualized. As a result, the substrate information acquisition unit can extract a reflection pattern having a different predetermined angle from the pattern in the image, and accurately calculate substrate information including the shape of the substrate such as warpage.
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
G01B 11/24 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des contours ou des courbes
34.
CONTROL VOLTAGE CORRECTION METHOD AND DIELECTROPHORESIS APPARATUS
The control voltage correction method corrects a control voltage that causes a dielectrophoretic force to act on dielectric particles contained in the first fluid injected into a fluid chip. The control voltage correction method includes measuring an impedance between first electrodes in a fluid chip through the first fluid or a second fluid, calculating a correction coefficient based on the measured impedance and a fluid impedance derived by a mathematical formula, and correcting a control voltage based on the correction coefficient. The fluid impedance indicates an impedance of the first fluid or the second fluid. The first fluid is a fluid containing dielectric particles and other particles. The second fluid is the same type of fluid as the fluid excluding the dielectric particles and the other particles from the first fluid.
B03C 5/00 - Séparation de particules des liquides dans lesquels elles sont dispersées, par effet électrostatique
G01N 15/10 - Recherche de particules individuelles
G01N 15/12 - Recherche de particules individuelles en mesurant des effets électriques ou magnétiques en observant des changements de résistance ou d’impédance à travers des fentes traversées par des particules individuelles, p. ex. en utilisant le principe de Coulter
35.
PRINTING DEVICE AND METHOD FOR CONVEYING PRINTING MEDIUM
A steering roller 51 (rollers 422, 475) is configured from a concave roller. Additionally, in a conveyance direction Dc, concave rollers 431, 432, 442, 444, 453 are furthermore provided between the steering roller 422 and a color printing part 32 on the downstream side of the steering roller 422. Similarly, in the conveyance direction Dc, concave rollers 476, 477 are furthermore provided between the steering roller 475 and a white printing part 33 on the downstream side of the steering roller 475.
B65H 23/025 - Positionnement, tension, suppression des à-coups ou guidage des bandes transversal par des dispositifs étireurs par des rouleaux
B41J 2/01 - Machines à écrire ou mécanismes d'impression sélective caractérisés par le procédé d'impression ou de marquage pour lequel ils sont conçus caractérisés par la mise en contact sélective d'un liquide ou de particules avec un matériau d'impression à jet d'encre
B65H 23/038 - Commande du positionnement transversal de la bande par des rouleaux
36.
METHOD FOR CALCULATING NUMBER OF PIECES OF DATA AND METHOD FOR EVALUATING SUBSTRATE PROCESSING DEVICE
This method for calculating the number of pieces of data comprises: a first step for obtaining a first number of pieces of process data that is information indicating the performance of a process performed on a substrate by a substrate processing device, said first number being two or more; a second step for calculating, as a third number, the number of pieces of process data required for determining that the first number of pieces of process data satisfies a given condition by performing statistical calculation on a second number of pieces of process data, said second number being two to the first number, inclusive; and a third step for determining whether the second number is the third number or more.
Provided are a substrate processing apparatus and an exhaust pipe cleaning method that make it possible to clean an exhaust pipe without interrupting substrate processing for a long period of time. This substrate processing apparatus comprises: a chamber that forms a processing space for processing a substrate; an exhaust pipe that is connected to the chamber and discharges the atmosphere in the processing space to the outside of the chamber; an upstream opening/closing valve installed in the exhaust pipe; a cleaning liquid pipe that is connected to a connection point downstream of the upstream opening/closing valve in the exhaust pipe and introduces a cleaning liquid to the exhaust pipe; a drain pipe that is connected to a branch point downstream of the connection point in the exhaust pipe and discharges the liquid in the exhaust pipe; and a downstream opening/closing valve that is installed downstream of the branch point in the exhaust pipe.
The present invention relates to a substrate processing device and a method for controlling a substrate processing device. A substrate processing device 1 comprises: a mapping sensor 43 or the like that acquires substrate shape information including information on the shape of a plurality of substrates W; a transfer robot IR comprising a hand 51; and a control unit. When the hand 51 supporting the substrate W moves in a carrier C, the control unit 81 controls the speed and acceleration of the hand 51 as follows. The control unit 81 acquires the thickness of the substrate W using the substrate shape information, calculates the weight of a first substrate on the basis of the thickness, and determines the speed and acceleration of the hand when supporting the first substrate in accordance with the weight of the first substrate. The control unit 81 uses the determined speed and acceleration to move the hand supporting the first substrate in a first slot.
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
B65G 49/07 - Systèmes transporteurs caractérisés par leur utilisation à des fins particulières, non prévus ailleurs pour des matériaux ou objets fragiles ou dommageables pour des plaquettes semi-conductrices
39.
SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
Provided are a substrate processing device and a substrate processing method with which it is possible to process not only the upper surface but also the lower surface of a substrate by using a processing gas. The substrate processing device includes: a placement table provided inside a chamber; a lift pin capable of being elevated and lowered relative to the placement table; a pin elevating/lowering drive mechanism for elevating and lowering the lift pin; a processing gas supply port for supplying a processing gas to a processing space; a discharge port for discharging the processing gas from the processing space; and a controller for controlling the pin elevating/lowering drive mechanism. The pin elevating/lowering drive mechanism is capable of maintaining the lift pin at a first pin height, a high second pin height, and a third pin height at which the substrate is held on the placement table or at a first substrate height above the placement table, at a second substrate height higher than the first substrate height, and a third substrate height higher than the second substrate height, respectively. The controller controls the pin elevating/lowering drive mechanism and executes a first pin height control, a second pin height control, and a third pin height control for maintaining the lift pin at the first pin height, the second pin height, and the third pin height, respectively.
A substrate bonding method includes a plasma processing step of processing a bonding surface of each of the substrates with a rare gas plasma which is a plasma of a rare gas, processing the bonding surface of each of the substrates processed with the rare gas plasma with a hydrogen plasma which is a plasma of hydrogen, and processing the bonding surface of each of the substrates processed with the hydrogen plasma with a nitrogen plasma which is a plasma of nitrogen and a substrate bonding step of bonding two substrates by bringing the bonding surfaces of the two substrates into contact with each other such that copper pads of the two substrates face each other and insulating films of the two substrates face each other after the plasma processing step.
A control unit determines whether a first difference value obtained by subtraction of a result of detection of a temperature of ink in a supply-side manifold from a first target temperature of ink in the supply-side manifold applies to a first phase in which the first difference value is equal to or larger than a first reference value, or a third phase in which the first difference value is smaller than a second reference value smaller than the first reference value. Then, when it is determined that the first difference value applies to the first phase, the control unit controls driving of a second heater in accordance with a value obtained by multiplication of a second difference value obtained by subtraction of a result of detection of a temperature of ink in a feedback pipe from a second target temperature of ink in the feedback pipe, by a first coefficient.
A primer is ejected to a first region on a print medium. Thereafter, the primer is cured by ultraviolet light. Next, a colored ink is ejected to a second region including the first region and a peripheral region of the first region. At this time, the colored ink is ejected from the colored ink ejection head so that a printing rate is 70% or more and a height of a liquid level of the colored ink in the peripheral region of the first region is 70% or more of a height of a liquid level of the primer in the first region. Thereafter, the colored ink is cured by ultraviolet light.
B41M 3/00 - Procédés d'impression pour des travaux imprimés d'un genre particulier, p. ex. motifs
B41J 2/21 - Machines à écrire ou mécanismes d'impression sélective caractérisés par le procédé d'impression ou de marquage pour lequel ils sont conçus caractérisés par la mise en contact sélective d'un liquide ou de particules avec un matériau d'impression à jet d'encre pour l'impression à plusieurs couleurs
B41J 11/00 - Dispositifs ou agencements pour supporter ou manipuler un matériau de copie en feuilles ou en bandes
B41M 7/00 - Traitement ultérieur des travaux imprimés, p. ex. chauffage, irradiation
The cleaning roller extends in the width direction inclined with respect to the Y direction. The cleaning liquid is supplied to this cleaning roller from above. The cleaning liquid supplied to the cleaning roller in this way moves downward by gravity. At this time, since the cleaning roller is inclined with respect to the Y direction, the cleaning liquid spreads also in an extension direction of the cleaning roller (i.e. width direction) according to a downward movement.
A substrate processing apparatus includes: a collection tank that stores a mixed fluid containing water supplied to a substrate and then collected and an organic solvent supplied to the substrate and then collected; a circulation pipe connected to the collection tank; a dewaterer disposed in the circulation pipe and including a separation membrane that allows the water to pass through and does not allow the organic solvent to pass through; a pump disposed in the circulation pipe; and a heater disposed downstream of the collection tank and upstream of the dewaterer in the circulation pipe, the heater heating the mixed fluid to a boiling point of the water or higher.
B08B 3/08 - Nettoyage impliquant le contact avec un liquide le liquide ayant un effet chimique ou dissolvant
B08B 3/10 - Nettoyage impliquant le contact avec un liquide avec traitement supplémentaire du liquide ou de l'objet en cours de nettoyage, p. ex. par la chaleur, par l'électricité ou par des vibrations
C02F 1/44 - Traitement de l'eau, des eaux résiduaires ou des eaux d'égout par dialyse, osmose ou osmose inverse
C02F 101/34 - Composés organiques contenant de l'oxygène
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
48.
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
A substrate processing apparatus includes: a collection tank storing a mixed fluid containing water and an organic solvent; a dewaterer disposed in a pipe connected to the collection tank, and including a separation membrane allowing the water to pass through and does not allow the organic solvent to pass through; a separation pipe which is connected to the dewaterer and into which separated water that has passed through the separation membrane flows; a concentration monitoring sensor measuring a concentration of the organic solvent contained in the separated water; a shut-off valve disposed in the separation pipe, and shutting off a flow of the separated water when the shut-off valve is in a closed state; and a controller closing the shut-off valve when the concentration of the organic solvent measured by the concentration monitoring sensor exceeds a safe concentration lower than a lower explosion limit of the organic solvent.
B08B 3/14 - Enlèvement des déchets, p. ex. des étiquettes, se trouvant dans le liquide de nettoyage
B01D 61/36 - PervaporationDistillation à membranesPerméation liquide
B08B 3/02 - Nettoyage par la force de jets ou de pulvérisations
B08B 3/08 - Nettoyage impliquant le contact avec un liquide le liquide ayant un effet chimique ou dissolvant
B08B 13/00 - Accessoires ou parties constitutives, d'utilisation générale, des machines ou appareils de nettoyage
C02F 1/44 - Traitement de l'eau, des eaux résiduaires ou des eaux d'égout par dialyse, osmose ou osmose inverse
C02F 103/34 - Nature de l'eau, des eaux résiduaires ou des eaux ou boues d'égout à traiter provenant de l'industrie chimique non prévue dans les groupes
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
49.
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
A substrate processing method includes a first layer generation step of applying a first coating liquid containing an organic material and a first photo-crosslinking agent onto a substrate to form a first layer, a second layer generation step of applying a second coating liquid containing a silicon material and a second photo-crosslinking agent onto the first layer to generate a second layer, and a light irradiation step of irradiating a stacked body formed of the first layer and the second layer with light, curing the first layer through a crosslinking reaction to form the organic layer, and curing the second layer through a crosslinking reaction to form the silicon layer.
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/16 - Procédés de couchageAppareillages à cet effet
50.
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
A substrate processing method includes supplying processing liquid to a substrate and dissolving dissolution gas, that has split due to entering a plurality of passages of a splitter, in the processing liquid in a state in which a surface of the splitter including the plurality of passages that are open at the surface is in contact with at least one of the processing liquid in contact with the substrate and the processing liquid away from the substrate.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
A substrate processing apparatus includes a treatment tank, a substrate holder, a discharge part, and an organic solvent recovery part. The treatment tank stores liquid. The substrate holder holds a plurality of substrates and immerses the plurality of substrates in a liquid in the treatment tank. The discharge part discharges a second concentration liquid having a solvent concentration higher than that of the first concentration liquid while avoiding at least a part of the first concentration liquid in the liquid from the treatment tank. The organic solvent recovery part includes a dewaterer that separates water from the second concentration liquid discharged by the discharge part to generate a third concentration liquid having a solvent concentration higher than that of the second concentration liquid.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
An organic solvent collection apparatus includes a collection pipe, a first dewaterer, a selector, and a controller. A mixed liquid of an organic solvent and water flows through the collection pipe. The first dewaterer includes a first membrane separator including a first separation membrane having an application range of a solvent concentration and separating the water from the mixed liquid. The selector selects between a first state in which the solvent concentration is increased by the first dewaterer and a second state in which the mixed liquid is supplied to another part different from the first dewaterer. The controller causes the selector to select the first state when the solvent concentration is greater than or equal to a concentration lower limit value of the first separation membrane, and causes the selector to select the second state when the solvent concentration is less than the concentration lower limit value.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
B08B 3/12 - Nettoyage impliquant le contact avec un liquide avec traitement supplémentaire du liquide ou de l'objet en cours de nettoyage, p. ex. par la chaleur, par l'électricité ou par des vibrations par des vibrations soniques ou ultrasoniques
The technology disclosed in the present description is used for separating pure water and an organic solvent from a mixed liquid while reducing the frequency of replacement of a separation membrane. An organic solvent extraction method relating to the technology disclosed in the present description comprises: a step for discharging a mixed liquid of water and an organic solvent from a substrate processing device; a step for detecting a purity degree indicating the amount of impurities contained in the mixed liquid; a step for comparing the purity degree with a first threshold value; a step for bringing the mixed liquid into contact with at least part of a separation membrane, thereby dehydrating the mixed liquid and extracting the organic solvent; and a step for, when the purity degree is less than the first threshold value, reducing impurities in the mixed liquid prior to the dehydration.
Provided is a technology that makes it possible to improve drawing efficiency when drawing a pattern by rotating laser light using a rotary optical element. A light irradiation device (1) comprises: a light source; a beam shaping unit (3) that spreads laser light from the light source in one direction; a beam modulation unit (4) that modulates the intensity distribution in one direction with respect to the laser light from the beam shaping unit (3); a beam rotation unit (5) that has a plurality of rotating optical elements (531, 551) that rotate the laser light from the beam modulation unit (4) about the optical axis; and a scanning unit (6) that scans the surface of an object using the laser light from the beam rotation unit (5). The beam rotation unit (5) includes: a switching unit (51) for switching the path of the laser light from the beam modulation unit (4) to one of a first path and a second path; the rotating optical element (531) for rotating the laser light about the optical axis on the first path; and the rotating optical element (551) for rotating the laser light about the optical axis on the second path.
The present invention dehydrates a liquid mixture while suppressing significant shortening of the service life of a separation membrane. This organic solvent concentration method comprises: a first step for setting, to a first concentration that is higher than a reference concentration, the concentration of an organic solvent in a first liquid which is a liquid mixture of pure water and the organic solvent, and storing the first liquid in a tank; a second step for setting, to a second concentration that is lower than the reference concentration, the concentration of the organic solvent in a second liquid which is a liquid mixture of pure water and the organic solvent, and supplying the second liquid to the first liquid stored in the tank to generate a third liquid in which the concentration of the organic solvent is equal to or higher than the reference concentration; and a third step for concentrating the third liquid by means of a separation membrane. In the second step, the liquid amount of the second liquid supplied to the first liquid is determined on the basis of the first concentration, the liquid amount of the first liquid stored in the tank, and the second concentration.
The technology disclosed in the specification of the present application is technology for separating mixed vapor of IPA vapor and water vapor, which represents a problem unsolved in the prior art. A substrate treatment device relating to the technology disclosed in the specification of the present application comprises: a treatment chamber in which a treatment tank having pure water stored therein is accommodated, a substrate is immersed in the pure water, and the substrate is thereby treated; an organic solvent vapor supply unit that supplies vapor of an organic solvent into the treatment chamber; a lifter that pulls up the substrate while bringing the vapor of the organic solvent into contact with the substrate when the substrate immersed in the pure water is removed from the treatment tank; a suction unit that sucks in mixed vapor generated in the treatment chamber from within the treatment chamber; and a separation membrane that separates vapor of the pure water and vapor of the organic solvent in the mixed vapor sucked in by the suction unit. The mixed vapor includes vapor of the pure water and vapor of the organic solvent.
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
B01D 53/22 - Séparation de gaz ou de vapeursRécupération de vapeurs de solvants volatils dans les gazÉpuration chimique ou biologique des gaz résiduaires, p. ex. gaz d'échappement des moteurs à combustion, fumées, vapeurs, gaz de combustion ou aérosols par diffusion
A transport mechanism of a printing device (1) has an inertia adjustment mechanism (70). The inertia adjustment mechanism (70) changes the inertia of a specific driven roller (12s). The resonance frequency of a vibration system including the specific driven roller (12s) can thereby be changed. Therefore, the resonance frequency can be shifted in accordance with conditions during use of the printing device (1). Resonance of the printing medium can thereby be avoided.
B65H 23/188 - Positionnement, tension, suppression des à-coups ou guidage des bandes longitudinal en commandant ou régulant le mécanisme d'avance de la bande, p. ex. le mécanisme agissant sur la bande courante en liaison avec la bande courante
58.
SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
This substrate processing device comprises: a substrate processing unit for processing a substrate; a light source for irradiating, with a spotlight, a monitored object which is located inside the substrate processing unit or outside the substrate processing unit; an imaging unit for imaging a region which includes the monitored object irradiated with the spotlight to generate image data; and a control unit for monitoring the monitored object on the basis of the image data.
This support method includes a model creation step for creating an estimation model including Equation (1). In Equation (1), D(x) represents a power law. The model creation step includes a coefficient value determination step for determining values of a first coefficient k and a second coefficient q of the power law D(x) by Bayesian estimation using a data set. The value of each explanatory variable in the data set indicates a particle size. The value of each objective variable in the data set indicates the number of particles. The coefficient value determination step includes a step in which a step for sampling the value of the first coefficient k and the value of the second coefficient q from the prior distribution of the first coefficient k and the prior distribution of the second coefficient q is repeated to acquire the posterior distribution of the first coefficient k and the posterior distribution of the second coefficient q. The prior distributions include a uniform distribution over a predetermined range. (1): A × D(x) = A × Kx-q
A region detecting method detects, from a detection object image, a target region corresponding to a reference image. The region detecting method includes: hierarchizing the reference image into N hierarchies by processing using different reduction rates and generating a plurality of reference hierarchical images, calculating a first frequency information from each of the plurality of reference hierarchical images, hierarchizing the detection object image into N hierarchies by processing using different reduction rates and generating a plurality of object hierarchical images, calculating a second frequency information from each of the plurality of object hierarchical images, comparing the respective second frequency information of the plurality of object hierarchical images and the respective first frequency information of the plurality of reference hierarchical images, and detecting, from the detection object image, the target region corresponding to the reference image based on the comparison result.
G06V 10/25 - Détermination d’une région d’intérêt [ROI] ou d’un volume d’intérêt [VOI]
G06T 3/40 - Changement d'échelle d’images complètes ou de parties d’image, p. ex. agrandissement ou rétrécissement
G06V 10/44 - Extraction de caractéristiques locales par analyse des parties du motif, p. ex. par détection d’arêtes, de contours, de boucles, d’angles, de barres ou d’intersectionsAnalyse de connectivité, p. ex. de composantes connectées
G06V 10/74 - Appariement de motifs d’image ou de vidéoMesures de proximité dans les espaces de caractéristiques
61.
SUBSTRATE HOLDING DEVICE AND SUBSTRATE PROCESSING APPARATUS
A spin chuck has a spin base. Fixed pins and mobile pins are provided in a peripheral portion of the spin base. Each mobile pin is provided to be changeable to a holding state in which the mobile pin comes into contact with the outer peripheral end of a substrate arranged on the spin base and a releasing state in which the mobile pin is spaced apart from the substrate. A magnet lifting-lowering device is configured to be capable of switching the state of each mobile pin using a lifting-lowering magnet. A controller selectively executes the control for switching the states of the mobile pins at the same time and the control for switching the states of the mobile pins at different points in time.
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
62.
SUBSTRATE TRANSPORTING ROBOT, SUBSTRATE TREATING SYSTEM, AND METHOD OF CONTROLLING SUBSTRATE TRANSPORTING ROBOT
A substrate transporting robot includes a hand configured to support the substrate in a horizontal posture, an advancing and withdrawing mechanism and a linear moving mechanism configured to move the hand in a horizontal direction, and a robot controller. The robot controller causes the hand to support the substrate, on whose top face a liquid film is formed, to obtain a first range of an acceleration/deceleration for moving the hand in correspondence to a state of the liquid film, and causes at least either the advancing and withdrawing mechanism or the linear moving mechanism to move the hand at an acceleration/deceleration within the first range.
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
An ink supplier includes an ink tank, an ink supply route and an ink feedback route along which ink is circulated between the ink tank and a head, an ink heater that heats the ink in the ink tank, and an external tank storing the ink to be supplied to the ink tank. A controller allows the ink to be replenished from the external tank to the ink tank in a flow rate regulation mode in which a flow rate is regulated in such a manner that the temperature of the ink in the ink tank falls within a predetermined temperature range. A regulation flow rate for ink replenishment in the flow rate regulation mode is calculated on the basis of at least the temperature in the ink tank and an ink storage amount.
On a PDF generation side, for each record, variable data of a used field is extracted from a variable data file, and a first hash value is calculated according to a predetermined calculation rule. Furthermore, on the PDF generation side, the variable data of the used field in the variable data file is placed on a corresponding page to generate a print data file. Thereafter, on an inspection side, the variable data is extracted from the print data file to calculate a second hash value according to the predetermined calculation rule, and whether or not the second hash value matches the first hash value calculated on the PDF generation side is inspected.
There is provided a technique capable of easily identifying a deformed idler roller when strong tension is applied to a print medium and of suppressing the deformation of some important idler rollers. A printing apparatus includes a transport mechanism having multiple idler rollers. At least one of the idler rollers is a sacrificial roller that is more deformable than the other idler rollers. When strong tension is applied to the print medium, the sacrificial roller becomes deformed in preference to the other idler rollers. This allows the deformed idler roller to be easily identified, and suppresses the deformation of the idler rollers other than the sacrificial roller.
The maintenance member has the discharge plane, which is adjacent to the cleaning plane in the cleaning direction and recessed downward from the cleaning plane. This discharge plane is provided between the two extended surfaces, which are extended in the cleaning direction respectively from the two contact planes, in the X direction. In such a configuration, a flow of the cleaning liquid falling down from the cleaning plane to the discharge plane in the cleaning direction is formed. Thus, the amount of the cleaning liquid flowing in the X direction from the cleaning plane can be suppressed.
An organic solvent collection apparatus includes at least one collection tank, a dewatering circulator, and a purification circulator. The collection tank stores a mixed liquid of an organic solvent and water. The dewatering circulator includes at least one dewatering circulation pipe connected to the collection tank and a circulation dewaterer that separates water from the mixed liquid, and generates a first concentrated liquid that is a mixed liquid in which a solvent concentration of the organic solvent is increased by circulation through the dewatering circulation pipe. The purification circulator includes at least one purification circulation pipe through which the first concentrated liquid is circulated and at least one filter that captures an impurity of the first concentrated liquid, and circulates the first concentrated liquid through the purification circulation pipe to generate a recycling liquid in which a content rate of the impurity in the first concentrated liquid is reduced.
B01D 61/36 - PervaporationDistillation à membranesPerméation liquide
B01D 5/00 - Condensation de vapeursRécupération de solvants volatils par condensation
B01D 39/00 - Substance filtrante pour fluides liquides ou gazeux
B01D 41/00 - Régénération, à l'extérieur du filtre, de la substance filtrante ou des éléments filtrants utilisés dans la filtration des fluides liquides ou gazeux
B01D 53/02 - Séparation de gaz ou de vapeursRécupération de vapeurs de solvants volatils dans les gazÉpuration chimique ou biologique des gaz résiduaires, p. ex. gaz d'échappement des moteurs à combustion, fumées, vapeurs, gaz de combustion ou aérosols par adsorption, p. ex. chromatographie préparatoire en phase gazeuse
A simulation system includes a provisional simulation model, a control command value output section, and a virtual controller section. The provisional simulation model simulates the operation of a real device using provisional specifications different from control specifications of the real device. The control command value output section outputs a control command value in accordance with control software. The virtual controller section operates the provisional simulation model in accordance with the control command value. This configuration is capable of evaluating whether the control command value outputted from the control software is appropriate or not using the provisional simulation model even when the real control specifications are unknown. This allows the debugging of the control software without operating the real device.
A circulation pipe is connected to a collection tank storing a mixed fluid containing water and an organic solvent, and includes: a first pipe connecting a downstream side of a second position and an upstream side of a first position; a second pipe connecting a downstream side of the first position and an upstream side of the second position; and a bypass pipe connecting the downstream side of the first position and the upstream side of the second position through a path different from that of the second pipe. The dewaterer is disposed in the first pipe or the bypass pipe, and the pump pressurizes the mixed fluid at a separation pressure higher than a circulation pressure and the heater heats the mixed fluid, in a state where the mixed fluid circulates through the first pipe and the bypass pipe.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
An organic solvent collection apparatus includes a collection pipe, a first dewaterer, and a second dewaterer. A mixed liquid of an organic solvent and water discharged from a processing unit flows through the collection pipe. The first dewaterer includes a first membrane separator that includes a first separation membrane having an application range of a solvent concentration and separates water from the mixed liquid having a solvent concentration greater than or equal to a concentration lower limit value of the application range. The second dewaterer is provided at a preceding stage of the first dewaterer, separates water from the mixed liquid discharged through the collection pipe to increase the solvent concentration of the mixed liquid to greater than or equal to the concentration lower limit value, and supplies the mixed liquid having the solvent concentration greater than or equal to the concentration lower limit value to the first dewaterer.
B01D 17/00 - Séparation de liquides, non prévue ailleurs, p. ex. par diffusion thermique
B01D 17/12 - Dispositifs auxiliaires spécialement adaptés pour être utilisés avec les appareils pour séparer des liquides, p. ex. circuits de commande
C02F 1/04 - Traitement de l'eau, des eaux résiduaires ou des eaux d'égout par chauffage par distillation ou évaporation
C02F 1/44 - Traitement de l'eau, des eaux résiduaires ou des eaux d'égout par dialyse, osmose ou osmose inverse
C02F 101/34 - Composés organiques contenant de l'oxygène
C02F 103/34 - Nature de l'eau, des eaux résiduaires ou des eaux ou boues d'égout à traiter provenant de l'industrie chimique non prévue dans les groupes
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
A direct imaging system includes an optical modulator having multiple elements arranged corresponding to a sub scanning direction and for modulating light from a light source, and an exposure head for exposing the substrate with the light modulated by the optical modulator. A control part relatively moves the exposure head in a main scanning direction to expose the sub exposure area with the light modulated using a selection element, and after the sub exposure area is exposed, relatively moves the exposure head an amount corresponding to a sub exposure width in the sub scanning direction. Accordingly, exposure can be continued even if there is a defect in the optical modulator.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A substrate processing method according to the present invention comprises: a step for inputting target processing amount information to a first trained model that has been constructed by machine learning of first training data; a step for acquiring predicted stay time information that is output by the first trained model; a step for acquiring target nozzle speed information by processing the predicted stay time information; and a step for processing, according to the target nozzle speed information, a substrate to be processed. The target nozzle speed information indicates a target value of the movement speed of a processing nozzle which moves while discharging a processing solution to the substrate to be processed, wherein the movement speed of the processing nozzle is set for each of a plurality of processing nozzle positions at which a movement range of the processing nozzle is divided into a plurality of movement sections. The target processing amount information indicates a target value of a processing amount of the substrate to be processed with the processing solution at each of a plurality of positions in the radial direction of the substrate to be processed. The predicted stay time information indicates a predicted value of a stay time of the processing nozzle in each of the plurality of movement sections.
A substrate processing method according to the present invention includes a step for starting rotation of a substrate, a step for processing the substrate by supplying a chemical liquid to the substrate while evacuating the gas inside a processing cup that surrounds the substrate, a step for supplying a rinse liquid to the substrate to replace the chemical liquid on the substrate with the rinse liquid, a step for supplying a drying liquid to the substrate to replace the rinse liquid on the substrate with the drying liquid, and a step for drying the substrate by rotating the substrate to remove the drying liquid on the substrate while discharging a gas from a gas discharge nozzle that is provided above the substrate to form an air flow that flows along an upper surface of the substrate. The evacuation pressure at which the gas inside the processing cup is evacuated is lower during the drying step than during the processing step.
A semiconductor wafer received in a chamber is preheated by light irradiation from halogen lamps, and is thereafter irradiated with flashes of light from flash lamps. Prior to the flash irradiation, ozone is stored in a gas storage tank, so that the pressure in the gas storage tank is higher than atmospheric pressure. On the other hand, the pressure in the chamber is reduced to lower than atmospheric pressure. In this condition, a supply valve is opened between the time when the flash lamps turn on to start the flash irradiation and the time when the temperature of a front surface of the semiconductor wafer reaches a peak temperature. This allows ozone gas to flow all at once from the gas storage tank toward the chamber, thereby supplying the ozone gas instantaneously into the chamber.
The sensor is provided which detects the ink or air bubbles in the pressure transmission pipe between the supply tank and the air filter. Therefore, the overflow of the ink or air bubbles to the pressure transmission pipe connecting the supply tank and the pressure generator can be detected before these reach the air filter provided in the pressure transmission pipe.
B41J 2/195 - Machines à écrire ou mécanismes d'impression sélective caractérisés par le procédé d'impression ou de marquage pour lequel ils sont conçus caractérisés par la mise en contact sélective d'un liquide ou de particules avec un matériau d'impression à jet d'encre caractérisés par la manipulation de l'encre pour contrôler la qualité de l'encre
B41J 2/17 - Machines à écrire ou mécanismes d'impression sélective caractérisés par le procédé d'impression ou de marquage pour lequel ils sont conçus caractérisés par la mise en contact sélective d'un liquide ou de particules avec un matériau d'impression à jet d'encre caractérisés par la manipulation de l'encre
For each individual correction area to be corrected so as to suppress image defects caused by dot missing in the printed image to be formed on the base material by the inkjet printing apparatus, it is determined whether or not to use a correction aid ink (white or transparent ink) for the correction of that individual correction area. A correction execution area is determined by removing pixel rows corresponding to a predetermined thinning number (e.g. one pixel row) from the opposite ends of an individual correction area determined to be corrected using the correction aid ink. The printing data is corrected such that a color ink is ejected in the correction executed area to form the printed image after the correction aid ink is ejected. Based on such corrected printing data, the printed image is formed on the base material.
B41J 2/21 - Machines à écrire ou mécanismes d'impression sélective caractérisés par le procédé d'impression ou de marquage pour lequel ils sont conçus caractérisés par la mise en contact sélective d'un liquide ou de particules avec un matériau d'impression à jet d'encre pour l'impression à plusieurs couleurs
B41J 11/00 - Dispositifs ou agencements pour supporter ou manipuler un matériau de copie en feuilles ou en bandes
B41M 3/00 - Procédés d'impression pour des travaux imprimés d'un genre particulier, p. ex. motifs
B41M 5/00 - Procédés de reproduction ou méthodes de reproduction ou de marquageMatériaux en feuilles utilisés à cet effet
77.
MEMBRANE-CATALYST LAYER ASSEMBLY AND WATER ELECTROLYSIS DEVICE
In the present invention, a third catalyst that promotes the bonding of hydrogen and oxygen is disposed on the anode side of an electrolyte membrane (51). Even when hydrogen generated on the cathode side passes through the electrolyte membrane (51) and enters the anode side, the action of the third catalyst enables said hydrogen to bond with oxygen generated on the anode side, thereby converting into water. This makes it possible to reduce the concentration of hydrogen in the gas discharged from the anode side. Particles of the third catalyst have a hollow structure with a cavity therein. Therefore, the amount of the third catalyst used can be reduced while maintaining the surface area of the particles. Additionally, because the particles of the third catalyst have an opening, the movement of water, hydrogen, and oxygen at the anode side is less likely to be inhibited. Accordingly, reductions in the reaction rate of electrolysis on the anode side can be suppressed.
C25B 9/23 - Cellules comprenant des électrodes fixes de dimensions stablesAssemblages de leurs éléments de structure avec des diaphragmes comprenant des membranes échangeuses d'ions dans ou sur lesquelles est incrusté du matériau pour électrode
C25B 9/00 - Cellules ou assemblages de cellulesÉléments de structure des cellulesAssemblages d'éléments de structure, p. ex. assemblages d'électrode-diaphragmeCaractéristiques des cellules relatives aux procédés
C25B 11/093 - Électrodes comportant des électro-catalyseurs sur un substrat ou un support caractérisées par le matériau électro-catalytique formé d’au moins un élément catalytique et d’au moins un composé catalytiqueÉlectrodes comportant des électro-catalyseurs sur un substrat ou un support caractérisées par le matériau électro-catalytique formé de plusieurs éléments catalytiques ou composés catalytiques au moins un métal noble ou oxyde de métal noble et au moins un oxyde d’un métal non noble
78.
CELL CULTURING MANAGEMENT DEVICE, CELL CULTURING MANAGEMENT SYSTEM, CELL CULTURING MANAGEMENT METHOD, AND COMPUTER PROGRAM
A cell culturing management device according to the present invention comprises an analysis unit, an evaluation unit, an estimation unit, and a management unit. The analysis unit acquires, in a time series, captured images indicating an imaging result of cells cultured in a container, analyzes a plurality of the captured images, and detects a cell image, which indicates a cell, for each captured image. The evaluation unit evaluates the state of the cell for each captured image on the basis of the detection result of the cell image. The estimation unit derives a cell state estimation model, which estimates temporal changes in the state of the cell, on the basis of the evaluation result of the state of the cell in the plurality of captured images. The management unit manages culturing of the cells on the basis of the estimation result by the cell state estimation model.
The input unit receives a first command for switching a first ink discharge surface from a capped state to a decapped state and outputs a first input signal, and receives a second command for switching a second ink discharge surface from a capped state to a decapped state and outputs a second input signal. The control unit can perform step a) of switching the first ink discharge surface from a capped state to a decapped state when the first input signal is received and it is detected that a first head unit has moved from a first driving position to a first maintenance position, and step b) of switching the second ink discharge surface from a capped state to a decapped state when the second input signal is received and it is detected that a second head unit has moved from a second driving position to a second maintenance position.
B41J 2/165 - Prévention du colmatage des ajutages, p. ex. nettoyage, obturation par un capuchon ou humidification des ajutages
B41J 2/045 - Machines à écrire ou mécanismes d'impression sélective caractérisés par le procédé d'impression ou de marquage pour lequel ils sont conçus caractérisés par la mise en contact sélective d'un liquide ou de particules avec un matériau d'impression à jet d'encre caractérisés par le procédé de formation du jet en produisant à la demande des gouttelettes ou des particules séparées les unes des autres par pression, p. ex. à l'aide de transducteurs électromécaniques
In this inkjet printing apparatus, an ink separation region is set in a partial region including a heater in a feedback pipe that connects an internal collecting tank and a supply tank on an ink circulation path. The ink separation region is a region in which ink in the circulation path is separated from ink in the other regions in the feedback pipe when ink circulation stops. A control unit selectively performs a normal resumption mode and a post-drainage resumption mode in accordance with a temperature of ink in the ink separation region before resuming ink circulation in the circulation path. In the post-drainage resumption mode, after at least a part of ink in the ink separation region is drained to an external collecting tank, the ink separation region and the other regions in the feedback pipe are caused to communicate with each other.
B41J 2/17 - Machines à écrire ou mécanismes d'impression sélective caractérisés par le procédé d'impression ou de marquage pour lequel ils sont conçus caractérisés par la mise en contact sélective d'un liquide ou de particules avec un matériau d'impression à jet d'encre caractérisés par la manipulation de l'encre
B41J 2/195 - Machines à écrire ou mécanismes d'impression sélective caractérisés par le procédé d'impression ou de marquage pour lequel ils sont conçus caractérisés par la mise en contact sélective d'un liquide ou de particules avec un matériau d'impression à jet d'encre caractérisés par la manipulation de l'encre pour contrôler la qualité de l'encre
Provided is technology capable of performing DC sputtering using a gallium target while reducing metal contamination. This DC sputtering device comprises: a substrate holding part that holds a substrate; a target container that holds a gallium target including gallium so as to face a main surface of the substrate in a first direction; a DC power supply that applies DC power to the gallium target; and a conductor that has one end connected to a negative electrode side of the DC power supply and the other end in contact with the gallium target in the target container, the conductor being formed of a gallium corrosion resistant metal. In addition, the DC sputtering device includes: a sputtering gas supply unit having a gas supply port for supplying a sputtering gas between the target container and the substrate holding part; and a magnet unit which is positioned on the opposite side of the target container from the substrate holding part, and forms, on the surface of the gallium target on one side in the first direction, an annular high-density plasma region in which the density of the plasma-converted sputtering gas is higher than the periphery.
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
H01L 21/203 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant un dépôt physique, p. ex. dépôt sous vide, pulvérisation
82.
DATA PRESENTATION METHOD, ANNOTATION METHOD, AND COMPUTER PROGRAM
In this data presentation method, first, feature values of multiple pieces of data 9 are calculated. Subsequently, a distance d between the pieces of data 9 in a feature value space S defined on the basis of the feature values is calculated. Then, the data 9 is selected from a dataset 90 on the basis of the calculated distance d, and is presented to a user. Thus, the data 9 can be presented to the user in the manner corresponding to the distance d between the pieces of data 9 in the feature value space S. Therefore, the user can efficiently perform a process of labelling each of the multiple pieces of data 9.
A sample-data presentation step of presenting sample data to a user, a labelling step in which a user labels the sample data, and an evaluation value calculation step of calculating an evaluation value in a feature value space are repeated. Then, in the sample-data presentation step in second and subsequent series of the steps, data with the highest evaluation value calculated in the clustering step in a previous series is presented as the sample data. In this manner, in the sample-data presentation step in second and subsequent series, the data having a different feature from that of the sample data presented in the sample-data presentation step in the previous series can be presented. This can prevent features of the sample data to be presented to the user, from being imbalanced.
A substrate processing method includes a liquid process to supply a processing liquid to a surface of a substrate while holding the substrate in a horizontal state by a center chuck that holds the substrate in a lower surface center portion of the substrate. The method includes a drying process to spin off the liquid on the surface of the substrate by rotating the substrate around a rotation axis along an up/down direction while holding the substrate in a horizontal state by the center chuck and gripping the substrate at an outer circumferential portion of the substrate by an outer circumferential chuck including a plurality of grippers each having a side surface contact portion that comes into contact with an outer circumferential portion side surface of the substrate.
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
B08B 3/04 - Nettoyage impliquant le contact avec un liquide
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
Provided is a technology with which it is possible to form a high-quality film on a main surface of a substrate without significantly reducing the productivity. In this reactive sputtering method, a thin film that contains a first element and a second element is formed on a main surface of a substrate by alternately repeating a sputtering step for forming a first element film on the main surface and a reaction step for reacting the first element film and the second element after the sputtering step. The reactive sputtering method includes: (a) a first reactive sputtering step (S11) that includes a first sputtering step (S21) and a first reaction step (S22); and (b) a second reactive sputtering step (S12) that is executed after the first reactive sputtering step (S11) and includes a second sputtering step (S23) and a second reaction step (S24). The reaction time for reacting the first element film with the second element is longer in the first reaction step (S22) than in the second reaction step (S24).
This substrate processing method comprises: a step for supplying a conductive processing liquid for etching to a substrate (9) on which a film (96) to be processed is positioned in a recess (95) of a pattern, and bringing the processing liquid into contact with the film (96) to be processed; and a step for repeatedly switching an application voltage applied between the substrate (9) and the processing liquid between a first voltage and a second voltage different from each other in a predetermined switching cycle in a state where the processing liquid is in contact with the film (96) to be processed, thereby repeatedly switching the potential of a side wall surface (942) forming the recess (95) between a first potential and a second potential smaller than the first potential. The first potential is 0 V or more, and the second potential is 0 V or less. Furthermore, the switching period is 0.05 seconds or more. Thus, the etching rate of the film (96) to be processed can be increased.
A support method supports exploration of a value of an explanatory variable that maximizes or minimizes an expected value of a response variable, and includes: outputting, from a first machine learning model, a first predictive distribution which is a predictive distribution of the expected value of the response variable; outputting, from a second machine learning model, a second predictive distribution which is a predictive distribution of a variance of the response variable; constructing a third predictive distribution that integrates the first predictive distribution and the second predictive distribution; and a recommended value acquisition process of executing parallel Bayesian optimization based on the third predictive distribution, at least one acquisition function, and an exploration range, and acquiring at least one recommended value of the explanatory variable that maximizes the acquisition function from within the exploration range.
A support method includes: performing a coefficient setting process of receiving setting of a value of a risk aversion coefficient included in a heteroscedasticity acquisition function; and executing heteroscedasticity Bayesian optimization based on a first predictive distribution of an expected value of a response variable, a second predictive distribution of a variance of the response variable, a heteroscedasticity acquisition function, and an exploration range, to acquire, from within the exploration range, a recommended value of an explanatory variable that maximizes the heteroscedasticity acquisition function. The heteroscedasticity acquisition function is a function in which the larger the value of the risk aversion coefficient becomes, the higher a proportion of acquiring the recommended value from a region with a smaller variance of the response variable becomes. The coefficient setting process includes setting the value of the risk aversion coefficient based on a position of a slider operable by an operator.
This inkjet printing apparatus includes an ink circulation path in which a circulation pump that circulates ink and a heater that heats circulating ink are interposed. A control unit can sequentially perform a step (a) of, upon receipt of a signal regarding a command for stopping driving the circulation pump, stopping driving the heater, and determining a circulation duration for which the circulation pump is kept operating and ink circulation in the circulation path is continued, on the basis of a duty value of the heater for a predetermined time period before the time of receipt of the signal and a flow rate of ink in the circulation path for the predetermined time period, and a step (b) of stopping driving the circulation pump after the elapse of the circulation duration.
A silicon semiconductor wafer is transported into a chamber, and preheating of the semiconductor wafer is started in a nitrogen atmosphere by irradiation with light from halogen lamps. When the temperature of the semiconductor wafer reaches a predetermined switching temperature in the course of the preheating, oxygen gas is supplied into the chamber to change the atmosphere within the chamber from the nitrogen atmosphere to an oxygen atmosphere. Thereafter, a front surface of the semiconductor wafer is heated for an extremely short time period by flash irradiation. Oxidation is suppressed when the temperature of the semiconductor wafer is relatively low below the switching temperature, and is caused after the temperature of the semiconductor wafer becomes relatively high. As a result, a dense, thin oxide film having good properties with fewer defects at an interface with a silicon base layer is formed on the front surface of the semiconductor wafer.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/324 - Traitement thermique pour modifier les propriétés des corps semi-conducteurs, p. ex. recuit, frittage
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
A substrate processing apparatus includes a processing tank including a wall defining an internal space to store a processing liquid, a lifter to hold a substrate and immerse the substrate in the processing liquid, a plurality of processing liquid nozzles to discharge the processing liquid into the internal space of the processing tank from a plurality of respective different positions in the processing tank, a heating device including a plurality of heaters to respectively heat a plurality of different regions of the wall, and a controller to individually control discharge of the processing liquid from the plurality of processing liquid nozzles and individually control outputs of the plurality of heaters. The controller may individually control the outputs of the plurality of heaters according to a discharge state of the processing liquid from the plurality of processing liquid nozzles.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
G05B 19/418 - Commande totale d'usine, c.-à-d. commande centralisée de plusieurs machines, p. ex. commande numérique directe ou distribuée [DNC], systèmes d'ateliers flexibles [FMS], systèmes de fabrication intégrés [IMS], productique [CIM]
Provided is a technique with which it is possible to form copper wiring while reducing an environmental load. This copper wiring formation process includes a film formation step (S11) and a light irradiation step (S12). The film formation step (S11) is a step for forming a film (10) mainly composed of copper nitride on the surface of a base material (9). The light irradiation step (S12) is a step for forming wiring mainly composed of copper by selectively irradiating the film (10) with laser light (L1).
Some or all of a plurality of halogen lamps are connected in parallel to a power regulator. The power regulator controls power supply to the plurality of halogen lamps in accordance with an instruction value. A detection instruction value is given to the power regulator during a period from when a preceding processed semiconductor wafer is carried out of a chamber till when a subsequent unprocessed semiconductor wafer is carried into the chamber. The detection instruction value is a value larger than 50% of the maximum power that can be input to all the parallels connected to the power regulator. Power actually output by the power regulator is measured. If the measured output power is less than the detection instruction value, it is determined that a failure has occurred in any of the plurality of halogen lamps, and an alarm is issued.
This insert member is provided with an insert body. The insert body is inserted into a container for co-culturing different types of cells. The insert body is provided with a cylindrical part having a tubular shape and a closing part. The cylindrical part has an opening at the bottom. Different types of cells can be seeded on the closing part. The closing part closes the opening. The biocompatibility of the closing part is higher than that of a porous resin. The biocompatibility indicates the degree of biological environment recreatability.
A technique is provided that allows use of a multielectrode array device to measure the impedances of biological samples. An impedance measurement apparatus includes a measurement container, a plurality of first electrodes, a second electrode, a third electrode, a voltage application circuit, a current detection circuit, and a voltage detection circuit. The first electrodes are arranged in an array on the bottom surface of the measurement container. The second electrode and the third electrode are located inside the measurement container. The voltage application circuit applies a voltage between each first electrode and the second electrode. The current detection circuit detects current flowing through each first electrode. The voltage detection circuit detects a voltage between each first electrode and the third electrode.
G01N 27/12 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance d'un corps solide dépendant de l'absorption d'un fluideRecherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance d'un corps solide dépendant de la réaction avec un fluide
97.
DEFECT INSPECTION DEVICE, SUBSTRATE JOINING DEVICE, AND DEFECT INSPECTION METHOD
This defect inspection device comprises: a stage that supports or holds a bonded substrate that is two substrates bonded together in a housing that accommodates the bonded substrate; a light source that locally heats the bonded substrate by emitting light toward a target region on a light receiving surface of the bonded substrate; an infrared camera that detects the temperature distribution of the target region irradiated with the light from the light source; an actuator that changes the position on the bonded substrate that is irradiated with the light from the light source; and a cooling device that supplies, into the housing, a cooling gas that is at a temperature lower than the air temperature outside the housing, and thereby reduces the air temperature inside the housing while forming a flow of the cooling gas in the housing.
A substrate processing device according to the present invention comprises a weight prediction unit. The weight prediction unit uses a weight change prediction model to predict a change in weight of a resin member with which a processing liquid comes into contact, from a processing condition when substrate processing using the processing liquid is carried out in a processing unit that includes the resin member. The weight change prediction model is an inference model that has been obtained by machine learning of a training data set which includes pairs of the processing condition of the substrate and a change in weight of the resin member after carrying out the substrate processing under the processing condition by the processing unit.
A substrate holding device includes: a mounting table having a mounting surface on which a substrate is to be mounted; an up-down unit configured to mount the substrate on the mounting surface by moving down a plurality of support pins supporting the substrate from below; a suction unit configured to suck and hold a peripheral part of the substrate from below using a suction pad; a positioning unit configured to position the substrate by abutting on an end surface of the substrate supported by the plurality of support pins at a positioning position separated upward from the suction pad; and a controller configured to control the up-down unit, the suction unit, the up-down unit and the positioning unit. The substrate positioned by the positioning unit is mounted on the mounting surface and then held in suction by the suction unit.
H01L 21/68 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le positionnement, l'orientation ou l'alignement
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
100.
SUBSTRATE TREATMENT METHOD, SUBSTRATE TREATMENT DEVICE, AND SUBSTRATE TREATMENT SOLUTION
Provided are a substrate treatment method, a substrate treatment device, and a substrate treatment solution that make it possible to further prevent the collapse of a pattern formed on the surface of a substrate and perform sublimation drying. A substrate processing method according to the present invention is for processing a pattern formation surface of a substrate W and includes: a supply step in which a substrate treatment solution containing a sublimable substance and a solvent is supplied to the pattern formation surface; a solidification step in which the solvent in a liquid film of the substrate treatment solution that was supplied to the pattern formation surface in the supply step is evaporated, the sublimable substance is deposited, and a solidified film containing the sublimable substance is formed; and a sublimation step in which the solidified film is sublimated and the solidified film is thereby removed. The sublimable substance contains at least one of pivaloylacetonitrile and 3-methylpyridine-2-carboxylic acid.
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
C07C 255/17 - Nitriles d'acides carboxyliques ayant des groupes cyano liés à des atomes de carbone acycliques contenant des groupes cyano et des atomes d'oxygène, liés par des liaisons doubles, liés au même squelette carboné acyclique
