Ions are generated using an ion source and directed toward a workpiece on a chuck. Resistance and/or reactance between at least two pick-up measurement wires and a stimulating electrode in a sensor is measured. The sensor is on a surface of a chamber that the ions are within. The surface is fabricated of a material that is an insulator. A thickness of a film accumulation on the surface is determined using the resistance and/or the reactance between the at least two pick-up measurement wires and the stimulating electrode
H01J 37/244 - DétecteursComposants ou circuits associés
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
An indirectly heated cathode for an ion source has a filament and a monolithic cathode body. The monolithic cathode body extends along an axis from first to second ends, consists of a solid rod, a tubular portion, and one or more thermal shields. The solid rod defines an end cap and extending from the first end toward the second end. The tubular portion is contiguous with the solid rod and defines a cavity extending from the second end toward the first end to a closed end wall. A filament is positioned within the cavity. A thermal shield is contiguous with the tubular portion and/or the solid rod to limit a transfer of thermal radiation from the filament to one or more regions external to the monolithic cathode body. The thermal shields can be disk or an annular shield. The filament is closer to the closed end wall than the disk.
An ion beam characterization system has one or more sensors positioned with respect to an ion beam. The one or more sensors image a portion of the ion beam over a predetermined range of angles and positions of the one or more sensors with respect to the portion of the ion beam, and define imaging data associated with the portion of the ion beam. A controller is configured to define a two-dimensional profile of the portion of the ion beam based, at least in part, on the imaging data. The two-dimensional profile is based, at least in part, on the predetermined range of angles and positions of the one or more sensors with respect to the ion beam and light associated with the ion beam. The sensors receive the light associated with the ion beam and to provide a signal to the controller based on the received light.
A method for forming an interconnect layer for a semiconductor device includes depositing a first conductive layer on a semiconductor wafer, the first conductive layer having a thickness less than a desired final thickness of the interconnect layer; implanting an implant species into a top surface of the first conductive layer, wherein the implant species is selected so as to mitigate a stress developed in the first layer; and depositing one or more additional conductive layers upon the implanted first conductive layer up to the desired final thickness of the interconnect layer.
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
A workpiece having a crystalline lattice and an alignment feature is positioned on a first workpiece support. A first position of the workpiece is detected and emission x-rays from one or more x-ray sources are directed toward the workpiece on the first workpiece support and diffracted from the workpiece to define diffraction x-rays that are detected. One or more angles associated with the crystalline lattice are determined based on the diffraction x-rays and the first position of the alignment feature with respect to the x-ray sources to define a workpiece profile with respect to the alignment feature. The workpiece is transferred to a second workpiece support to detect a second position of the alignment feature. A position of the second workpiece support in a process chamber is controlled with respect an ion beam based on the workpiece profile and the second position of the alignment feature.
A mobile detection system that follows the high energy beamline during a tuning phase/startup phase of an ion implantation system or otherwise having a passive mobile monitoring system around the ion implantation system can identify radiation conditions that stationary detection systems outside or even inside the system may have missed or poorly reported data on. A mobile detection system that can move a radiation detector to pinpoint location near the ion implantation system or wafer cassette and take detailed data readings very near the source will provide enhanced abilities to determine radiation conditions and appropriately determine shutdown and cooldown times, thereby improving efficient use of the system.
H01J 37/244 - DétecteursComposants ou circuits associés
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
7.
SPECTROSCOPY-BASED SAFETY SYSTEM FOR NUCLEAR REACTION DETECTION IN AN ION IMPLANTATION SYSTEM
An ion implantation system includes a spectroscopy-based safety system for nuclear reaction detection. A spectra analysis and safety system are disclosed herein. Associated methodology for use with the system includes processing data received from photon energy resolving spectrometers in order to identify detected photon energy, and alert the operator to the same and/or shutdown the system.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
An arc chamber for an ion source provides a source of thermal radiation positioned within an interior region of the arc chamber. One or more components generally enclose the interior region of the arc chamber, defining an arc chamber environment within the interior region of the arc chamber. A thermal radiation shield is positioned between the one or more components and an external environment outside of the arc chamber and limits a transfer of the thermal radiation from the chamber environment to the external environment. The one or more components can be an extraction aperture plate having an extraction aperture defined therethrough. The thermal radiation shield is positioned proximate to, and covers at least approximately 75% of the exterior surface of the extraction aperture plate to primarily prevent thermal radiation for passing through the extraction aperture plate.
An ion implantation system, ion source, and method are provided for forming an aluminum ion beam from an aluminum-containing species to an ion source. One or more of a halide species and a halide molecule are introduced to the ion source, where the halide species is selected from a group consisting of atomic chlorine, atomic bromine, and atomic iodine, and the halide molecule comprises a halide selected from a group consisting of chlorine, bromine, and iodine. The one or more of the halide species and the halide molecule clean one or more components of the ion source and further react with the aluminum-containing species to generate an aluminum-halide vapor. The aluminum ion beam is further formed from at least the aluminum-halide vapor.
C23C 14/14 - Matériau métallique, bore ou silicium
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
An ion source has arc chamber having one or more radiation generating features, an arc chamber body enclosing an internal volume, and at least one gas inlet aperture defined therein. A gas source provides a gas such as a source species gas or a halide through the gas inlet aperture. The source species gas can be an aluminum-based ion source material such as dimethylaluminum chloride (DMAC). One or more shields positioned proximate to the gas inlet aperture provide a fluid communication between the gas inlet aperture and the internal volume, minimize a line-of-sight from the one or more radiation generating features to the gas inlet aperture, and substantially prevent thermal radiation from reaching the gas inlet aperture from the one or more radiation generating features.
An ion implantation system has a first linear accelerator for accelerating ions of an ion beam to a first energy along a beam path. A second linear accelerator positioned downstream of the first linear accelerator along the beam path accelerates the ions to a second energy. A charge stripper has a stripper tube with a passageway positioned between the first and second linear accelerators. A charge stripping medium is provided in the passageway to strip at least one electron from the ions as the ion beam passes through the charge stripping medium. A focusing apparatus is associated with the stripper tube to control a trajectory of the ions within the passageway of the stripper tube. The focusing apparatus can be two or more quadrupoles and include an electrostatic lens, a magnet, a solenoid, or a Einzel lens.
H01J 37/02 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement Détails
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
12.
ION STRIPPING APPARATUS WITH INTEGRATED QUADRUPOLES
A charge stripper has a stripper tube 174 with a passageway, which may be positioned between the first and second linear accelerators of an ion implantation system, the first linear accelerator for accelerating ions of an ion beam to a first energy along a beam path, and the second linear accelerator positioned downstream of the first linear accelerator along the beam path accelerates the ions to a second energy. A charge stripping medium is provided in the passageway to strip at least one electron from the ions as the ion beam passes through the charge stripping medium. A focusing apparatus 200 is associated with the stripper tube to control a trajectory of the ions within the passageway of the stripper tube. The focusing apparatus can be two or more quadrupoles 202 and include an electrostatic lens, a magnet, a solenoid, or a Einzel lens.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
A resonator is provided for an RF linear accelerator and has a housing defining a housing volume. An electrode is configured to accelerate ions and is disposed external to the housing volume. A tube is electrically conductive and has an electrode portion and a coil portion. The electrode portion 5 is electrically coupled to the electrode. The tube is generally defined by a tube diameter. The coil portion has a predetermined shape when viewed along a first axis and is disposed within the housing volume. The coil portion defines a coil length when viewed perpendicular to the first axis. The coil portion of the tube is turned three 10 or fewer turns about the first axis. The coil length is less than approximately six times the tube diameter, and six times the tube diameter is less than approximately 1500mm.
A high-energy ion implantation system has an ion source and mass analyzer to form and analyze an ion beam along a beam path. A first RF LINAC accelerates the ion beam to a first accelerator exit, and a second RF LINAC accelerates the ion beam to a second accelerator exit along the beam path. A first magnet between the first and second RF LINACs alters the beam path along a first plane. A third RF LINAC accelerates the ion beam, and a second magnet between the second and third RF LINACs alters the beam path along a second plane. A beam shaping apparatus defines a shape of the ion beam, and a third magnet between the third RF LINAC beam shaping apparatus alters the beam path along a third plane, where the first, second, and third planes are not coplanar.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
A resonator is provided for an RF linear accelerator and has a housing defining a housing volume. An electrode is configured to accelerate ions and is disposed external to the housing volume. A tube is electrically conductive and has an electrode portion and a coil portion. The electrode portion is electrically coupled to the electrode. The tube is generally defined by a tube diameter. The coil portion has a predetermined shape when viewed along a first axis and is disposed within the housing volume. The coil portion defines a coil length when viewed perpendicular to the first axis. The coil portion of the tube is turned three or fewer turns about the first axis. The coil length is less than approximately six times the tube diameter, and six times the tube diameter is less than approximately 1500 mm.
A system and method for clamping a workpiece positions a workpiece on a clamping surface of an electrostatic clamp (ESC). The clamping surface is electrically grounded or electrically floated based on conditions of the workpiece and the ESC, such as a resistivity of the workpiece, where the clamping surface is electrically floated when the resistivity of the workpiece is high. A clamping voltage is applied to the ESC to clamp the workpiece to the clamping surface for semiconductor processing. The clamping surface is electrically coupled to an electrical ground for releasing the workpiece from the clamping surface. A release status of the workpiece is determined, to be in a clamped or released state. When the release status is clamped, a bias potential is applied to the clamping surface by a switch to promote de-clamping. When the release status is released, the workpiece is removed from the clamping surface.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
17.
DIRECT VOLTAGE CONTROL OF A CLAMPING SURFACE OF AN ELECTROSTATIC CLAMP
A system and method for clamping a workpiece positions a workpiece on a clamping surface of an electrostatic clamp (ESC). The clamping surface is electrically grounded or electrically floated based on conditions of the workpiece and the ESC, such as a resistivity of the workpiece, where the clamping surface is electrically floated when the resistivity of the workpiece is high. A clamping voltage is applied to the ESC to clamp the workpiece to the clamping surface for semiconductor processing. The clamping surface is electrically coupled to an electrical ground for releasing the workpiece from the clamping surface. A release status of the workpiece is determined, to be in a clamped or released state. When the release status is clamped, a bias potential is applied to the clamping surface by a switch to promote de-clamping. When the release status is released, the workpiece is removed from the clamping surface.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
An ion source has an arc chamber and multiple electrode pairs that define a respective plasma column axis within the arc chamber. A source magnet surrounds the arc chamber and defines pole pairs, each respectively associated with the electrode pairs to confine a plasma to the respective plasma column axis. The source magnet can be an electromagnet or a permanent magnet. The electromagnet has coils and a magnetic core to define the pole pairs and confine the plasma to the respective plasma column based on a coil current supplied to the coils. The magnetic core can have movable core members to magnetically couple each of the plurality of pole pairs. The permanent magnet has a magnetic core and movable core members to selectively magnetically couple the permanent magnet to each of the plurality of pole pairs.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
19.
DUAL FORCE LIFT AND GROUND PINS FOR ELECTROSTATIC CHUCK AND METHOD FOR USE THEREOF
The disclosure is generally directed to an electrostatic system for processing a workpiece. An exemplary system includes an electrostatic chuck having a surface to receive a workpiece and a circuitry to engage the workpiece to the surface, the surface further comprising at least one opening; a Lift and Ground (LAG) Pin received at the opening of the surface. In certain embodiments, the LAG pin further includes a housing having an exterior and an interior chamber, the housing exterior configured to engage a chuck; a lifting appliance having a lift pin and a lift spring, the lift spring directing the lift pin to provide a bias force away from the housing; and a grounding appliance having a ground pin and a ground spring, the ground pin configured to provide a charge dissipation path form surface.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériauMoyens de réglage de diaphragmes ou de lentilles associées au support
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
20.
GRANULAR SPUTTER SOURCE TARGET WITH REPELLER CUP AND METHOD FOR USE THEREOF
The disclosure is generally directed to an ion implantation system and an ion source material associated therewith. More particularly, the present disclosure is directed to components for ion implantation system using an aluminum-based solid source material to produce ions for electrically doping silicon, silicon carbide, or other semiconductor substrates (i.e., wafer). The disclosed embodiments may be used at temperatures ranging up to 1000° C. The disclosed principles minimize deposits on extraction electrodes and source chamber components when using a pre-mixed etchant gas.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
21.
SYSTEM AND METHOD FOR PLASMA TREATMENT WITH INDEPENDENT CONTROL OF NEUTRAL PARTICLE AND ION FLUXES
A plasma treatment system solves the problem of providing independent control over ion and neutral particle fluxes by separating the workpiece from the plasma and placing the workpiece on a movable stage. Extraction electrodes are used to extract ions from the plasma and beam them at the workpiece. The neutral particles are allowed to project from the plasma to the workpiece. The neutral particle flux has a much stronger dependence on distance from the plasma source than the ion flux. Accordingly, the neutral particle to ion flux ratio may be adjusted by moving the stage toward or away from the plasma source. This system has the additional advantage of enabling directional processing wherein the workpiece is held at a tilt with respect to the ion beam as the workpiece is scanned through the ion beam.
The disclosure is generally directed to an electrostatic system for processing a workpiece. An exemplary system includes an electrostatic chuck having a surface to receive a workpiece and a circuitry to engage the workpiece to the surface, the surface further comprising at least one opening; a Lift and Ground (LAG) Pin received at the opening of the surface. In certain embodiments, the LAG pin further includes a housing having an exterior and an interior chamber, the housing exterior configured to engage a chuck; a lifting appliance having a lift pin and a lift spring, the lift spring directing the lift pin to provide a bias force away from the housing; and a grounding appliance having a ground pin and a ground spring, the ground pin configured to provide a charge dissipation path form surface.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
23.
IMPROVED ENERGY ACCURACY FOR AN RF LINEAR ACCELERATOR ION IMPLANTATION SYSTEM
An ion implantation system (100) has an ion source (102) configured to form an ion beam (108) along a beam path (140). An accelerator (115) is downstream of the ion source and configured to accelerate the ion beam to a predetermined energy. An energy filter (118) is downstream of the accelerator and has an entrance (146) configured to accept the ion beam. A beam measurement device (150) can be positioned downstream of the accelerator along the beam path and is configured to determine an angular orientation of the ion beam. A controller (148) further controls one or more of the accelerator and final energy filter based on the angular orientation of the ion beam with respect to the entrance of the energy filter. The controller can control beam parameters of an energy filter formula based on the angular orientation of the ion beam, where the energy filter formula is based on a characterization of the energy filter.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/05 - Dispositifs électronoptiques ou ionoptiques pour la séparation des électrons ou des ions en fonction de leur énergie
An ion implantation system has an ion source configured to form an ion beam along a beam path. An accelerator is downstream of the ion source and configured to accelerate the ion beam to a predetermined energy. An energy filter is downstream of the accelerator and has an entrance configured to accept the ion beam. A beam measurement device can be positioned downstream of the accelerator along the beam path and is configured to determine an angular orientation of the ion beam. A controller further controls one or more of the accelerator and final energy filter based on the angular orientation of the ion beam with respect to the entrance of the energy filter. The controller can control beam parameters of an energy filter formula based on the angular orientation of the ion beam, where the energy filter formula is based on a characterization of the energy filter.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
25.
HIGH ASPECT RATIO BEAM DUMP OR FARADAY CUP WITH NEUTRON RADIATION SHIELDING
A neutron shielding apparatus has a shield member made of a neutron attenuation material. The shield member has a cavity defining an entrance with an entrance width for accepting an ion beam along a beam path. A target structure intercepts the ion beam within the cavity at a predetermined distance from the entrance, where the predetermined distance is greater than approximately one-half the entrance width, and where the ion beam emits neutron radiation in all directions. The neutron attenuation material attenuates the neutron radiation to a predetermined radiation exposure limit at one or more regions beyond a predetermined periphery of the target structure. The cavity can be a blind hole extending a predetermined depth from the entrance, or a passageway extending through the shield member defining the entrance and an exit. A positioning apparatus can selectively position the target structure at a target position within the cavity.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
26.
SEMICONDUCTOR RADIOACTIVE WAFER DECAY SAFETY AND OPERATION SYSTEM
A radiation safety apparatus for a semiconductor processing system has a safety fence with a support frame and radiation shields defining containment regions associated with load ports of the semiconductor processing system. The containment regions are associated with radioactive sources that emit radioactive radiation, where radiation shields attenuate the radiation to a region external to the containment regions. The radiation shields have access doors movably coupled to the support frame to provide access to the containment regions. Interlocks are provided with the access doors to selectively lock the access doors in a closed position to control the access to the containment regions from the external region through the access doors. A controller controls the interlocks based on a radiation decay associated with each of the radioactive sources and a predetermined safe radiation exposure level.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
27.
GRANULAR SPUTTER SOURCE TARGET WITH REPELLER CUP AND METHOD FOR USE THEREOF
The disclosure is generally directed to an ion implantation system and an ion source material associated therewith. More particularly, the present disclosure is directed to components for ion implantation system using an aluminum-based solid source material to produce ions for electrically doping silicon, silicon carbide, or other semiconductor substrates (i.e., wafer). The ion source material comprises a plurality of metal-containing ceramic granules, preferably ceramic granules coated with an aluminum composite. The disclosed embodiments may be used at temperatures ranging up to 1000° C. The disclosed principles minimize deposits on extraction electrodes and source chamber components when using a pre-mixed etchant gas.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 27/08 - Sources d'ionsCanons à ions utilisant une décharge d'arc
28.
SUBSTRATE INCLUDING A PRE-EPITAXIAL STACKING FAULT EXPANSION-STOP LAYER, DEVICES INCLUDING THE SAME, AND PROCESS OF MANUFACTURE
A semiconductor substrate including an epitaxial layer thereon includes a buffer layer of ions formed in the substrate at a depth proximate to an interface between the substrate upper surface and the epitaxial layer provided thereon. The buffer layer defines a pre-epitaxial stack fault expansion-stop layer, wherein the ion implanted buffer layer reduces and modulates thermoelectric stresses proximate to the substrate surface, which inhibits formation and glide of crystallographic defects in and through the substrate that may have been present in the semiconductor substrate as a function of the manufacturing process. Also disclosed are processes for forming the buffer layer in the semiconductor substrate.
H01L 21/225 - Diffusion des impuretés, p. ex. des matériaux de dopage, des matériaux pour électrodes, à l'intérieur ou hors du corps semi-conducteur, ou entre les régions semi-conductricesRedistribution des impuretés, p. ex. sans introduction ou sans élimination de matériau dopant supplémentaire en utilisant la diffusion dans ou hors d'un solide, à partir d'une ou en phase solide, p. ex. une couche d'oxyde dopée
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
29.
DOPANT DELIVERY SYSTEM TO ION SOURCE USING INDUCTION HEATING
An ion source has an arc chamber defining an arc chamber volume. An inductively heated dopant material source is in fluid communication with the arc chamber volume, and has a crucible containing a dopant species and an inductive heater. An induction heater power supply is coupled to the inductive heater to supply an induction current to the induction heater. A controller controls the induction current such that the inductive heater heats the dopant species to a predetermined temperature based on the induction current and selectively flows the dopant species from the crucible to the arc chamber volume. A material monitoring system determines an amount of the dopant species in the crucible based on an induction current supplied to the induction heater. An intermediary receptor can be heated in the crucible by the induction heater to aid a melting of the dopant species within the crucible.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
The system includes an insulative assembly having a first end and a second end opposite to the first end. The insulative assembly includes an insulator body having a plurality of shielding features defined on a surface thereof between the first end and the second end. The plurality of shielding features have a stairstep profile and are spaced apart and overlap with each other. Each space between adjacent shielding features defines a groove having a base and an entrance opposite the base, and a path connecting the base to the entrance may require at least two line segments. The plurality of shielding features and grooves increase the tracking length of the insulative assembly and provide a low enough fluid conductance that conductive deposits do not fully coat the length of the insulative assembly.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
31.
LINER WITH RAISED RIBS FOR PARTICLE TRANSPORT REDUCTION
A liner for an ion implanter includes a base and a plurality of ribs extending from a surface of the base. Each of the ribs includes a first surface that extends at an angle from the surface of the base toward a distal end and a second surface that extends from the distal end toward the surface of the base at a non-perpendicular angle.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
32.
METHOD AND APPARATUS FOR ION BEAM DIRECTIONAL DEPOSITION
A deposition system has an ion deposition apparatus configured to direct a deposition species toward a workpiece along a path. The workpiece has one or more features having a gap defined by the one or more features. A workpiece support holds the workpiece to receive the deposition species at a predetermined tilt angle with respect to the path. The ion deposition apparatus deposits the deposition species on the one or more features, the workpiece support rotates the workpiece with respect to the path, growing a deposition film of the deposition species on the one or more features in a predetermined manner. The deposition film can seal the gap to define a sealed cavity. Alternatively, the one or more features can be a mask that is augmented by the deposition film to increase one or more dimensions of the mask.
C23C 14/04 - Revêtement de parties déterminées de la surface, p. ex. au moyen de masques
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
C23C 14/22 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le procédé de revêtement
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
33.
METHOD AND APPARATUS FOR ION BEAM DIRECTIONAL DEPOSITION
A deposition system has an ion deposition apparatus configured to direct a deposition species toward a workpiece along a path. The workpiece has one or more features having a gap defined by the one or more features. A workpiece support holds the workpiece to receive the deposition species at a predetermined tilt angle with respect to the path. The ion deposition apparatus deposits the deposition species on the one or more features, the workpiece support rotates the workpiece with respect to the path, growing a deposition film of the deposition species on the one or more features in a predetermined manner. The deposition film can seal the gap to define a sealed cavity. Alternatively, the one or more features can be a mask that is augmented by the deposition film to increase one or more dimensions of the mask.
C23C 14/14 - Matériau métallique, bore ou silicium
C23C 14/22 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le procédé de revêtement
34.
METHOD, SYSTEM AND APPARATUS FOR TEACHING AND VERIFYING END STATION
The disclosure generally relates to a robotic system for positioning a workpiece relative to certain machinery. In one embodiment, the disclosure relates to a method, system and apparatus to teach positioning robots to place a workpiece relative to a processing center such as a chuck and to verify the placement using geometrical relationship therebetween. In one embodiment, the disclosure relates to an apparatus to position a workpiece at a chuck of a processing station. The apparatus includes a memory circuitry comprising an executable code; a central processing unit (CPU) in communication with the memory circuitry; an end effector (EE) for grasping and relocating the workpiece as well as an alignment chuck and a processing chuck. The alignment chuck and the wafer may be used to determine the distance between the chuck's center location (E) and the workpiece's center using various geometric relationships.
G05B 19/402 - Commande numérique [CN], c.-à-d. machines fonctionnant automatiquement, en particulier machines-outils, p. ex. dans un milieu de fabrication industriel, afin d'effectuer un positionnement, un mouvement ou des actions coordonnées au moyen de données d'un programme sous forme numérique caractérisée par des dispositions de commande pour le positionnement, p. ex. centrage d'un outil par rapport à un trou dans la pièce à usiner, moyens de détection additionnels pour corriger la position
35.
Apparatus and Method for Angle Control of Radicals, Neutral Atoms, and Molecules
Apparatuses and methods of operating the apparatus generally include a cryogenically cooled collimator that is cooled to capture and condense neutral atoms, radicals, and molecules generated in a plasma that contact surfaces thereof. The cryogenically cooled collimator includes a plurality of linear channels perpendicularly extending from the first planar side to a second planar side, wherein radicals that do not contact surfaces of the cryogenically cooled collimator are transmitted to a workpiece. Optionally, the apparatuses and methods may further include a radiation shield positioned in front of the cryogenically cooled collimator to prevent direct impingement of radiation onto the surface of the cryogenically cooled collimator. The cryogenically cooled collimator can be cooled to temperatures less than 300K during use.
The disclosure generally relates to a robotic system for positioning a workpiece relative to certain machinery. In one embodiment, the disclosure relates to a method, system and apparatus to teach positioning robots to place a workpiece relative to a processing center such as a chuck and to verify the placement using geometrical relationship therebetween. In one embodiment, the disclosure relates to an apparatus to position a workpiece at a chuck of a processing station. The apparatus includes a memory circuitry comprising an executable code; a central processing unit (CPU) in communication with the memory circuitry; an end effector (EE) for grasping and relocating the workpiece as well as an alignment chuck and a processing chuck. The alignment chuck and the wafer may be used to determine the distance between the chuck's center location (E) and the workpiece's center using various geometric relationships.
G05B 19/402 - Commande numérique [CN], c.-à-d. machines fonctionnant automatiquement, en particulier machines-outils, p. ex. dans un milieu de fabrication industriel, afin d'effectuer un positionnement, un mouvement ou des actions coordonnées au moyen de données d'un programme sous forme numérique caractérisée par des dispositions de commande pour le positionnement, p. ex. centrage d'un outil par rapport à un trou dans la pièce à usiner, moyens de détection additionnels pour corriger la position
H01L 21/68 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le positionnement, l'orientation ou l'alignement
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
37.
VARIABLE VENT PRESSURE AND FLOW FOR FLUSHING LOADLOCK CHAMBER
A workpiece processing system has a process chamber for processing a workpiece. A loadlock chamber has a workpiece support to support the workpiece. A vacuum isolation valve permits the workpiece to transfer between the workpiece support and the process environment. An atmospheric isolation valve permits the workpiece to transfer between the workpiece support and an atmospheric environment. A vent gas control device controls a pressure or a flow rate of a vent gas to the loadlock volume. A workpiece location system determines a presence of the workpiece on the workpiece support. The vent gas control device is controlled based on the workpiece being present on the workpiece support, the process time, and the vent time, maximizing the pressure or flow rate of the vent gas when the workpiece is not on the workpiece support, and maximizing conditioning of the loadlock chamber.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
38.
LOW-TEMPERATURE VAPORIZER FOR ION IMPLANTER WITH IN-VACUUM CONTROLLED FLOW
An ion source for an ion implantation system has a vacuum enclosure defining a vacuum environment and an arc chamber defining an arc chamber environment. The arc chamber is positioned within the vacuum enclosure and has an arc chamber conduit in fluid communication with the arc chamber environment. A vaporizer is positioned within the vacuum enclosure and configured to selectively vaporize a dopant species to define a dopant vapor within a vaporizer environment. The vaporizer has a vaporizer conduit in fluid communication with the vaporizer environment. A valve within the vacuum enclosure is fluidly coupled to the arc chamber conduit and the vaporizer conduit. The valve is configured to selectively control a flow of the dopant vapor from the vaporizer environment to the arc chamber environment. The valve can be a solenoid valve controlled by a controller. Multiple vaporizers and valves can be provided for vaporizing multiple dopant species.
A workpiece processing system has a process chamber (122) for processing a workpiece (118, 206). A loadlock chamber (132, 200) has a workpiece support (134, 208) to support the workpiece (118, 206). A vacuum isolation valve (138) permits the workpiece (118,206) to transfer between the workpiece support (134,208) and the process environment (126). An atmospheric isolation valve (136) permits the workpiece (118, 206) to transfer between the workpiece support (134, 208) and an atmospheric environment (130). A vent gas control device (156, 218) controls a pressure or a flow rate of a vent gas to the loadlock volume (150). A workpiece location system (222) determines a presence of the workpiece (118, 206) on the workpiece support (134,208). The vent gas control device (156,218) is controlled based on the workpiece (118, 206) being present on the workpiece support (134, 208), the process time, and the vent time, maximizing the pressure or flow rate of the vent gas when the workpiece (118, 206) is not on the workpiece support (134, 208), and maximizing conditioning of the loadlock chamber (132, 200).
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
40.
ION STRIPPING APPARATUS AND ION IMPLANTATION SYSTEM WITH SELECTABLE STRIPPING GAS SOURCE
An ion implantation system has a first linear accelerator for accelerating ions of an ion beam to a first energy along a beam path. A second linear accelerator positioned downstream of the first linear accelerator along the beam path accelerates the ions to a second energy. A charge stripper is positioned between the first and second linear accelerators and is at ground potential. A gas source enclosure selectively encloses a plurality of stripper gas containers in an enclosure environment at ground potential. Each of the plurality of stripper gas containers contains a respective stripper gas. A flow control apparatus can have one or more valves, mass flow controllers, and conduits that selectively fluidly couples each of the plurality of stripper gas containers to the charge stripper and that selectively controls a flow of each respective stripper gas to the charge stripper.
H01J 37/09 - DiaphragmesÉcrans associés aux dispositifs électronoptiques ou ionoptiquesCompensation des champs perturbateurs
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
41.
SYSTEM AND METHOD FOR MANAGING SOLID PHASE PRECURSORS FOR AN ION IMPLANTATION SYSTEM
A filter is configured to impede a flow of vapor from a vaporizer to an arc chamber in an ion implantation system. The flow is impeded to such a degree that the vaporizer must be operated at a higher temperature to match the flow rate that would result without the filter. Increasing the vaporizer temperature at which the vaporizer supplies the arc chamber with an operative flow rate of a vapor of an ion source material contained in the vaporizer prevents entry to the arc chamber of ion source material that is inadvertently vaporized by waste heat from the arc chamber while another species is being implanted. The filter may have a temperature-dependent permeability so as to provide a sharp transition between a temperature range at which the vapor flow is effectively cut off and a temperature range at which the vapor flow is at an operative rate.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 27/08 - Sources d'ionsCanons à ions utilisant une décharge d'arc
42.
SYSTEM AND METHOD FOR MANAGING SOLID PHASE PRECURSORS FOR AN ION IMPLANTATION SYSTEM
A filter is configured to impede a flow of vapor from a vaporizer to an arc chamber in an ion implantation system. The flow is impeded to such a degree that the vaporizer must be operated at a higher temperature to match the flow rate that would result without the filter. Increasing the vaporizer temperature at which the vaporizer supplies the arc chamber with an operative flow rate of a vapor of an ion source material contained in the vaporizer prevents entry to the arc chamber of ion source material that is inadvertently vaporized by waste heat from the arc chamber while another species is being implanted. The filter may have a temperature-dependent permeability so as to provide a sharp transition between a temperature range at which the vapor flow is effectively cut off and a temperature range at which the vapor flow is at an operative rate.
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
An ion implantation system includes an ion source, a beamline that extracts and shapes an ion beam from the ion source, a deceleration stage that reduces the energy of the ion beam while focusing the ion beam in the direction of a workpiece. A workpiece support has a structure that determines an implant plane position, which is the position of a workpiece surface that receives the ion beam. The workpiece support is configured to translate the implant plane along a path of the ion beam so as to shorten or lengthen the path without changing the tilt angle of the workpiece. The beam optics may be fixed and the focal point of the ion beam may be allowed to vary with a decel ratio. The workpiece support may translate the implant plane to a focal point of the ion beam or to some fixed offset from that focal point.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
44.
Automatic Beam Uniformity Correction Through Generative AI Modeling
In one embodiment, the disclosure relates to using artificial intelligence (AI) to implement automatic beam current density distribution tuning by obtaining measurements from stationary beam current measurement devices synchronously with the motion of a scanned ion beam to predict the beam tuning settings which will produce a desired beam current density profile. An exemplary method according to the disclosed embodiments include the steps of generating an ion beam as a function of an ion source; scanning the spot ion beam; obtaining signals from a plurality of stationary sensors; synchronizing the beam current measurements with the scanning of the beam to produce an input waveform; predicting the beam tuning controls that will produce the desired beam current density profile; and applying the predicted settings to the beam control system and validating that the beam current density profile matches the desired profile within a specified limit.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
An arc chamber for an ion source provides a source of thermal radiation positioned within an interior region of the arc chamber. One or more components generally enclose the interior region of the arc chamber, defining an arc chamber environment within the interior region of the arc chamber. A thermal radiation shield is positioned between the one or more components and an external environment outside of the arc chamber and limits a transfer of the thermal radiation from the chamber environment to the external environment. The one or more components can be an extraction aperture plate having an extraction aperture defined therethrough. The thermal radiation shield is positioned proximate to, and covers at least approximately 75% of the exterior surface of the extraction aperture plate to primarily prevent thermal radiation for passing through the extraction aperture plate.
An ion implantation system includes a wafer inspection system for inspecting wafers prior to ion implantation. The inspection facilitates diagnostics by helping distinguish the performance of an ion implantation process from the performance of upstream processes that affect the ion implantation process. The inspection may take place while the wafer is on an aligner (25), while it is in a load lock chamber (17A, 17B), or while it is otherwise being processed by a wafer transport system (11) in an end station (100). The inspection may be carried out without adding delay to wafer processing. The inspection may include modulated optical resonance (MOR) spectroscopy, and the inspection may be carried out through an optical fiber (23). The optical circuit may include a wavelength coupler so that a pump laser and probe laser of the MOR system can focus through one lens (21) on a narrowly determined inspection point.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
An ion implantation system includes a wafer inspection system for inspecting wafers prior to ion implantation. The inspection facilitates diagnostics by helping distinguish the performance of an ion implantation process from the performance of upstream processes that affect the ion implantation process. The inspection may take place while the wafer is on an aligner, while it is in a load lock chamber, or while it is otherwise being processed by a wafer transport system in an end station. The inspection may be carried out without adding delay to wafer processing. The inspection may include modulated optical resonance (MOR) spectroscopy, and the inspection may be carried out through an optical fiber. The optical circuit may include a wavelength coupler so that a pump laser and probe laser of the MOR system can focus through one lens on a narrowly determined inspection point.
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériauMoyens de réglage de diaphragmes ou de lentilles associées au support
H01J 37/22 - Dispositifs optiques ou photographiques associés au tube
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
48.
SYSTEM AND METHOD FOR DYNAMIC LOADLOCK PRESSURE CONTROL
A workpiece processing system has a process chamber for processing a workpiece within a process environment at vacuum pressure, defining a process time. A loadlock chamber defines a loadlock volume and has a vacuum isolation valve providing selective fluid communication between the loadlock volume and the process environment. The vacuum isolation valve permits the workpiece to transfer between the loadlock volume and the process environment. An atmospheric isolation valve provides fluid communication between the loadlock volume and atmosphere and selectively permits the workpiece to transfer between the loadlock volume and atmosphere. A vent gas control device selectively controls a pressure or flow rate of a vent gas to the loadlock volume, defining a vent time by a change from the vacuum pressure to atmospheric pressure. A controller controls the vent gas control device based on a critical path defined by the longer of the process time and the vent time.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
49.
LIQUID METAL ALLOY FEED MATERIALS FOR ION IMPLANTATION
Liquid metal alloy precursor compositions and their use as liquid metal alloy ion sources for ion implantation of non-traditional source elements generally include liquid metal alloy precursor compositions having a melting point less than a maximum operating temperature for the ion implantation system of about 550° C. The liquid metal alloy precursor composition generally provides homogenous or heterogenous liquid metal alloys having eutectic melting temperature less than about 550° C. The heterogenous liquid metal alloy compositions include a flux metal having a relatively low melting point and at least one additional metal that is at least partially soluble in the flux metal at a selected operating temperature of less than about 550° C. The liquid metal alloy precursor compositions are suitable for use in ion implantation systems configured for liquid metal ion sources (LMIS) or capillary drive sources. Also disclosed are processes for implanting liquid metal alloy ion source precursor compositions.
Liquid metal alloy precursor compositions and their use as liquid metal alloy ion sources for ion implantation of non-traditional source elements generally include liquid metal alloy precursor compositions having a melting point less than a maximum operating temperature for the ion implantation system of about 550oC. The liquid metal alloy precursor composition generally provides homogenous or heterogenous liquid metal alloys having eutectic melting temperature less than about 550oC. The heterogenous liquid metal alloy compositions include a flux metal having a relatively low melting point and at least one additional metal that is at least partially soluble in the flux metal at a selected operating temperature of less than about 550oC. The liquid metal alloy precursor compositions are suitable for use in ion implantation systems configured for liquid metal ion sources (LMIS) or capillary drive sources. Also disclosed are processes for implanting liquid metal alloy ion source precursor compositions.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
A workpiece processing system has a process chamber for processing a workpiece within a process environment at vacuum pressure, defining a process time. A loadlock chamber defines a loadlock volume and has a vacuum isolation valve providing selective fluid communication between the loadlock volume and the process environment. The vacuum isolation valve permits the workpiece to transfer between the loadlock volume and the process environment. An atmospheric isolation valve provides fluid communication between the loadlock volume and atmosphere and selectively permits the workpiece to transfer between the loadlock volume and atmosphere. A vent gas control device selectively controls a pressure or flow rate of a vent gas to the loadlock volume, defining a vent time by a change from the vacuum pressure to atmospheric pressure. A controller controls the vent gas control device based on a critical path defined by the longer of the process time and the vent time.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
F16K 1/00 - Soupapes ou clapets, c.-à-d. dispositifs obturateurs dont l'élément de fermeture possède au moins une composante du mouvement d'ouverture ou de fermeture perpendiculaire à la surface d'obturation
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
A system and method are provided for determining one or more characteristics of a workpiece based on a scattered light beam distribution. An emission apparatus emits a coherent light beam on a surface of the workpiece and the coherent light beam may scatter upon interacting with the surface, defining the scattered light beam distribution. The scattered light beam distribution may be based on one or more attributes of the surface of the workpiece where one or more characteristics of the workpiece are determined based on the scattered light beam distribution. A receiver apparatus images the scattered light beam distribution, and a controller is configured to determine one or more characteristics of the workpiece based on the image data.
G01N 21/95 - Recherche de la présence de criques, de défauts ou de souillures caractérisée par le matériau ou la forme de l'objet à analyser
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
A target body includes a plurality of wave-shaped layers sandwiched between an upper target body and a lower target body. Adjacent layers of the plurality of wave-shaped layers are offset such that peaks of one layer interface with valleys of an adjoining layer, thereby forming a plurality of interstitial gas flow channels. The target body defines a central bore along a central axis of the target body that extends between opposite planar ends of the target body, and the plurality of interstitial gas flow channels are open to the central bore.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 27/20 - Sources d'ionsCanons à ions utilisant un bombardement de particules, p. ex. ioniseurs
A workpiece processing system and method are disclosed for determining an alignment of a workpiece upon a workpiece support using a retractable sensor. A sensor moves in/out relative to an edge of the workpiece support to obtain positional data while the workpiece support is rotated. Based on the positional data, the alignment of the workpiece and workpiece support may be determined. After determining the alignment, the sensor may be retracted behind the workpiece support, such that the sensor is shielded by the workpiece support from an ion beam during ion implantation. Using a helical motion, an angle between the sensor and a support surface of the workpiece support may be maintained approximately constant during the measurement.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01L 21/68 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le positionnement, l'orientation ou l'alignement
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
A target body includes a plurality of wave-shaped layers sandwiched between an upper target body and a lower target body. Adjacent layers of the plurality of wave-shaped layers are offset such that peaks of one layer interface with valleys of an adjoining layer, thereby forming a plurality of interstitial gas flow channels. The target body defines a central bore along a central axis of the target body that extends between opposite planar ends of the target body, and the plurality of interstitial gas flow channels are open to the central bore.
A workpiece processing system and method are disclosed for determining an alignment of a workpiece upon a workpiece support using a retractable sensor. A sensor moves in/out relative to an edge of the workpiece support to obtain positional data while the workpiece support is rotated. Based on the positional data, the alignment of the workpiece and workpiece support may be determined. After determining the alignment, the sensor may be retracted behind the workpiece support, such that the sensor is shielded by the workpiece support from an ion beam during ion implantation. Using a helical motion, an angle between the sensor and a support surface of the workpiece support may be maintained approximately constant during the measurement.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/68 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le positionnement, l'orientation ou l'alignement
A target body can define a central bore along a central axis of the target body. The central axis extends between two planar ends of the target body. The target body has an effective density of less than 0.5 in region around the central bore. The target body can be a metal-doped ceramic material including AlN doped with aluminum or a homogenous ceramic material including AlN or Al2O3 and may be fabricated using additive manufacturing.
B33Y 70/00 - Matériaux spécialement adaptés à la fabrication additive
B33Y 80/00 - Produits obtenus par fabrication additive
59.
ELECTROSTATIC CHUCK WITH CONTROLLABLE TEMPERATURE, ION IMPLANTATION SYSTEM USING THE SAME AS WELL AS METHOD OF CONTROLLING THE TEMPERATURE IN SAID ELECTROSTATIC CHUCK
A clamping system has a workpiece clamp (102) having a platen (108) to support a workpiece (106) and heating elements (118) for heating the platen (108) to a platen temperature. A cooling plate (122) has cooling features to cool to the cooling plate. A vacuum chamber (128) defines a chamber volume between the platen (108) and the cooling plate (122). One or more radiation shields (140) within the chamber volume (128) can limit a radiative heat transfer between the platen (108) and the cooling plate (122). A vacuum source (134) and a gas source (142) are selectively fluidly coupled to the chamber volume. A controller (156) controls the platen (108) temperature in both a high and a low temperature regime by controlling a pressure within the vacuum chamber (128) through the vacuum source (134) and gas source (142) to control a heat transfer between the platen (108) and the cooling plate (122).
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
A clamping system has a workpiece clamp having a platen to support a workpiece and heating elements for heating the platen to a platen temperature. A cooling plate has cooling features to cool to the cooling plate. A vacuum chamber defines a chamber volume between the platen and the cooling plate. One or more radiation shields within the chamber volume can limit a radiative heat transfer between the platen and the cooling plate. A vacuum source and a gas source are selectively fluidly coupled to the chamber volume. A controller controls the platen temperature in both a high and a low temperature regime by controlling a pressure within the vacuum chamber through the vacuum source and gas source to control a heat transfer between the platen and the cooling plate.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
61.
DEPOSITION MONITOR FOR SEMICONDUCTOR MANUFACTURING SYSTEM
An ion implantation system includes a sensor for monitoring depositions of particles or flakes of other materials. The sensor monitors film thickness on a clear panel from behind the clear panel by emitting light and detecting reflections from the light. The system generates an alert for a buildup thickness. The composition of the film may also be detected by the sensor.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
An ion implantation system includes a sensor (300) for monitoring depositions (370) of particles or flakes of other materials. The sensor monitors film thickness on a clear panel (320) from behind the clear panel by emitting light (380) and detecting reflections (385) from the light. The system generates an alert for a buildup thickness. The composition of the film may also be detected by the sensor.
G01N 21/94 - Recherche de souillures, p. ex. de poussières
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
63.
HIGH BANDWIDTH VARIABLE DOSE ION IMPLANTATION SYSTEM AND METHOD
An ion implantation system 100 includes an ion source 108 that generates ions and produces an ion beam 112 along a beamline 160, optionally a mass analyzer 126 positioned downstream of the ion source that generates a magnetic field according to a selected charge-to-mass ratio. A beamline formed by ion beam is directed to a workpiece target 122. A gating apparatus includes one or more of: a mechanical gating device 136 configured to block or deflect the ion beam from contacting a workpiece target; or a power control gating device configured to cut off power to the ion source. The beam-to-workpiece target translation mechanism changes the beam-to-workpiece target position while the ion beam is gated by the gating apparatus. Methods for implanting ions in predetermined profiles on a workpiece are disclosed with multiple scans. These systems and methods allow for implantation profiles with smooth curvature and/or sharp differences in dosage characteristics at adjacent positions.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/302 - Commande des tubes par une information d'origine externe, p. ex. commande par programme
64.
HIGH BANDWIDTH VARIABLE DOSE ION IMPLANTATION SYSTEM AND METHOD
An ion implantation system includes an ion source that generates ions and produces an ion beam along a beamline, a mass analyzer positioned downstream of the ion source that generates a magnetic field according to a selected charge-to-mass ratio. A beamline formed by ion beam is directed to a workpiece target. A gating apparatus includes one or more of: a mechanical gating device configured to block or deflect the ion beam from contacting a workpiece target; or a power control gating device configured to cut off power to the ion source. The beam-to-workpiece target translation mechanism changes the beam-to-workpiece target position while the ion beam is gated by the gating apparatus. Methods for implanting ions in predetermined profiles on a workpiece are disclosed with multiple scans. These systems and methods allow for implantation profiles with smooth curvature and/or sharp differences in dosage characteristics at adjacent positions.
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
A cathode filament device for an indirectly heated cathode has a first and second filament rods having respective first and second engagement portions. The first engagement portion has a first engagement body with first and second positioning features extending from the first engagement body. The second engagement portion has at least a second engagement body. Third and fourth positioning features may extend from the second engagement body. First and second clamping members have respective clamping surfaces configured to selectively engage the respective first and second engagement bodies. At least the first positioning feature limits a translation of the first filament rod with respect to the first clamping member along a first axis. The second, third, and fourth positioning features may further limit the translation and secure a position of a filament coupled to the first and second filament rods.
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
A method for controlling workpiece deformation presents a first side of a first workpiece having an initial planarity to a first ion beam. The first ion beam deforms the first workpiece to define a first deformation of the first workpiece. A second side of the first workpiece is presented to a second ion beam to define a second deformation of the first workpiece that generally counteracts the first deformation of the first workpiece to define a final planarity of the first workpiece. The first workpiece can be a donor workpiece that is annealed after being presented to the second ion beam to define a split layer on one or more of the first and second sides of the donor workpiece. A receiver workpiece is bonded to the donor workpiece and is split from the donor workpiece to define an engineered substrate.
H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01L 21/302 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour changer leurs caractéristiques physiques de surface ou leur forme, p. ex. gravure, polissage, découpage
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
67.
APPARATUS AND METHOD FOR TWO-DIMENSIONAL ION BEAM PROFILING
cdd. A rotary input apparatus (240) may control a rotational position of the cylinder. A linear translation (242) apparatus controls a linear position of the cylinder and aperture plate. A controller may determine a uniformity and angular profile of the ion beam in a plurality of dimensions based, at least in part, on the rotational position of the cylinder, the linear position of the cylinder and aperture plate, and the respective beam current of the ion beam received.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/244 - DétecteursComposants ou circuits associés
68.
APPARATUS AND METHOD FOR TWO-DIMENSIONAL ION BEAM PROFILING
A profiling apparatus has a hollow cylinder having a circumferential slit having a circumferential slit width disposed about cylinder axis. Two or more beam current detectors are disposed within the cylinder to determine a respective beam current of an ion beam received at respective detector surfaces. An aperture plate is upstream of the cylinder and has an aperture slit running parallel to the cylinder having a slit width. A rotary input apparatus controls a rotational position of the cylinder. A linear translation apparatus controls a linear position of the cylinder and aperture plate. A controller determines a uniformity and angular profile of the ion beam in a plurality of dimensions based, at least in part, on the rotational position of the cylinder, the linear position of the cylinder and aperture plate, and the respective beam current of the ion beam received.
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
69.
Twist and tilt verification using diffraction patterns
A light source directs an incident beam at a surface of the workpiece on a stage at an oblique angle. A detector images a diffraction pattern of the incident beam reflected off the workpiece. At least one of a twist angle and a tilt angle of the workpiece on the stage is determined based on the diffraction pattern. The workpiece may be a semiconductor wafer and the stage may be, for example, part of an ion implanter.
G01B 11/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la rugosité ou l'irrégularité des surfaces
An arc chamber for an ion source defines a chamber volume, and a target material is disposed within the chamber volume. The target material comprises a dopant species and can be contained in a target member. An indirectly heated cathode is positioned within the chamber volume and ionizes a source gas within the chamber volume, defining a plasma having a plasma thermal emission. A target heater selectively heats the target material independently from the plasma thermal emission associated with the plasma. The target heater can be a resistive heating element, inductive heating element, halogen heating element, or a laser configured to selectively heat at least a portion of the target member. The target member can consist of a solid dopant material or can contain a liquid dopant material.
H01J 27/08 - Sources d'ionsCanons à ions utilisant une décharge d'arc
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
An arc chamber for an ion source defines a chamber volume, and a target material is disposed within the chamber volume. The target material comprises a dopant species and can be contained in a target member. An indirectly heated cathode is positioned within the chamber volume and ionizes a source gas within the chamber volume, defining a plasma having a plasma thermal emission. A target heater selectively heats the target material independently from the plasma thermal emission associated with the plasma. The target heater can be a resistive heating element, inductive heating element, halogen heating element, or a laser configured to selectively heat at least a portion of the target member. The target member can consist of a solid dopant material or can contain a liquid dopant material.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
72.
APPARATUS AND METHODS FOR MAINTAINING VACUUM CHECKING FORCE ON SEMICONDUCTOR SUBSTRATES UNDER ABNORMAL SEALING CONDITIONS
In some embodiments, the present disclosure relates to workpiece handling system. The workpiece handling system includes a vacuum workpiece handler having a surface configured to receive a semiconductor workpiece. The surface has edges that form a plurality of vacuum suction holes along the surface. A plurality of vacuum conduits are respectively coupled to the plurality of vacuum suction holes, and a shared vacuum plenum is coupled to the plurality of vacuum conduits. The plurality of vacuum conduits are arranged between the shared vacuum plenum and the plurality of vacuum suction holes. A restrictor is configured to independently vary communication of the plurality of vacuum conduits between the shared vacuum plenum and the plurality of vacuum suction holes. The restrictor includes a plurality of self-regulated passive restricting units.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
A high-energy ion implantation system 100 has an ion source 104 and mass analyzer to form and analyze an ion beam 116 along a beam path 118. A first LINAC 130 accelerates the ion beam to a first accelerator exit, and a second LINAC 130B accelerates the ion beam to a second accelerator exit along the beam path. A first magnet 132 between the first and second LINACs alters the beam path along a first plane 122. A second magnet 136 after the second LINAC alters the beam path along a second plane 124. A beam shaping apparatus 110 defines a shape of the ion beam. The first and second planes are not coplanar.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/05 - Dispositifs électronoptiques ou ionoptiques pour la séparation des électrons ou des ions en fonction de leur énergie
H05H 7/22 - Détails d'accélérateurs linéaires, p. ex. tubes de glissement
74.
TWIST AND TILT VERIFICATION USING DIFFRACTION PATTERNS
A light source directs an incident beam at a surface of the workpiece on a stage at an oblique angle. A detector images a diffraction pattern of the incident beam reflected off the workpiece. At least one of a twist angle and a tilt angle of the workpiece on the stage is determined based on the diffraction pattern. The workpiece may be a semiconductor wafer and the stage may be, for example, part of an ion implanter.
G01B 11/26 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des angles ou des cônesDispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour tester l'alignement des axes
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
A high-energy ion implantation system has an ion source and mass analyzer to form and analyze an ion beam along a beam path. A first RF LINAC accelerates the ion beam to a first accelerator exit, and a second RF LINAC accelerates the ion beam to a second accelerator exit along the beam path. A first magnet between the first and second RF LINACs alters the beam path along a first plane. A third RF LINAC accelerates the ion beam, and a second magnet between the second and third RF LINACs alters the beam path along a second plane. A beam shaping apparatus defines a shape of the ion beam, and a third magnet between the third RF LINAC beam shaping apparatus alters the beam path along a third plane, where the first, second, and third planes are not coplanar.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
An ion source having a thermionically-emitting cathode coupled to a plasma chamber and is exposed to a plasma chamber environment. A first power supply is coupled to a first filament associated with the thermionically-emitting cathode and is configured to selectively supply a first power to the first filament to heat the first filament to a first temperature and induce a thermionic emission from the thermionically-emitting cathode. A non-thermionically emitting cathode is coupled to the plasma chamber and exposed to the plasma chamber environment. A second power supply supplies a second power to a second filament associated with the non-thermionically emitting cathode and heats the second filament and the non-thermionically emitting cathode to a second temperature while not inducing thermionic emission from the non-thermionically emitting cathode, where condensation within the plasma chamber environment is minimized. A controller can control the first and second power supplies to provide constant power or emission.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
An ion beam characterization system has one or more sensors positioned with respect to an ion beam. The one or more sensors image a portion of the ion beam over a predetermined range of angles and positions of the one or more sensors with respect to the portion of the ion beam, and define imaging data associated with the portion of the ion beam. A controller is configured to define a two-dimensional profile of the portion of the ion beam based, at least in part, on the imaging data. The two-dimensional profile is based, at least in part, on the predetermined range of angles and positions of the one or more sensors with respect to the ion beam and light associated with the ion beam. The sensors receive the light associated with the ion beam and to provide a signal to the controller based on the received light.
H01J 37/244 - DétecteursComposants ou circuits associés
H01J 37/24 - Circuits non adaptés à une application particulière du tube et non prévus ailleurs
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
78.
DUAL CATHODE TEMPERATURE-CONTROLLED MULTI-CATHODE ION SOURCE
An ion source having a thermionically-emitting cathode coupled to a plasma chamber and is exposed to a plasma chamber environment. A first power supply is coupled to a first filament associated with the thermionically-emitting cathode and is configured to selectively supply a first power to the first filament to heat the first filament to a first temperature and induce a thermionic emission from the thermionically-emitting cathode. A non-thermionically emitting cathode is coupled to the plasma chamber and exposed to the plasma chamber environment. A second power supply supplies a second power to a second filament associated with the non-thermionically emitting cathode and heats the second filament and the non-thermionically emitting cathode to a second temperature while not inducing thermionic emission from the non-thermionically emitting cathode, where condensation within the plasma chamber environment is minimized. A controller can control the first and second power supplies to provide constant power or emission.
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
A magnetic focusing apparatus for focusing an ion beam has a first magnet pair, a first core having a first yoke and a pair of first pole members defining a pair of first poles. A second core has a second yoke and a pair of second pole members defining a pair of second poles. A first gap separates the pairs of first and second poles. First and second coils are respectively wound around the first and second cores. The pairs of first and second poles control a focus of the ion beam along a first plane based on a current, and the pairs of first and second poles define an exit trajectory of the ion beam along a second plane downstream of the first magnet pair. The exit trajectory does not angularly deviate along the second plane from an entrance trajectory upstream of the first magnet pair.
H01J 37/244 - DétecteursComposants ou circuits associés
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
An electrode apparatus for an ion implantation system has a base plate having a base plate aperture and at least one securement region. A securement apparatus is associated with each securement region, and a plurality of electrode rods are selectively coupled to the base plate by the securement apparatus. The plurality of electrode rods have a predetermined shape to define an optical region that is associated with the base plate aperture. An electrical coupling electrically connects to the plurality of electrode rods and is configured to electrically connect to an electrical potential. The plurality of electrode rods have a predetermined shape configured to define a path of a charged particle passing between the plurality of electrode rods based on the electrical potential. The plurality of electrode rods can define a suppressor or ground electrode downstream of an extraction aperture of an ion source.
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
H01J 37/09 - DiaphragmesÉcrans associés aux dispositifs électronoptiques ou ionoptiquesCompensation des champs perturbateurs
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
An electrode apparatus for an ion implantation system has a base plate having a base plate aperture and at least one securement region. A securement apparatus is associated with each securement region, and a plurality of electrode rods are selectively coupled to the base plate by the securement apparatus. The plurality of electrode rods have a predetermined shape to define an optical region that is associated with the base plate aperture. An electrical coupling electrically connects to the plurality of electrode rods and is configured to electrically connect to an electrical potential. The plurality of electrode rods have a predetermined shape configured to define a path of a charged particle passing between the plurality of electrode rods based on the electrical potential. The plurality of electrode rods can define a suppressor or ground electrode downstream of an extraction aperture of an ion source.
H01J 37/063 - Disposition géométrique des électrodes pour la formation du faisceau
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
82.
Method for setting gap between cathode and filament
A cathode apparatus for an ion source has a cathode with a positioning feature and a blind hole. A cathode holder has an aperture defined by a thru-hole and a locating feature defined along an aperture axis. The thru-hole receives the cathode along the aperture axis in first and second alignment positions based on a rotational orientation of the positioning feature with respect to the locating feature. The first alignment position locates the cathode at a first axial position along the aperture axis. The second alignment position locates the cathode at a second axial position along the axial axis. A filament device has a filament clamp, a filament rod defining a filament axis, and a filament coupled to the filament rod. The filament clamp is in selective engagement with the filament rod to selectively position the filament along the filament axis within the blind hole.
H01J 37/075 - Canons à électrons utilisant l'émission thermo-ionique de cathodes chauffées par bombardement de particules ou par irradiation, p. ex. par laser
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
83.
Ion implantation system and method for implanting aluminum using non-fluorine-containing halide species or molecules
An ion implantation system, ion source, and method are provided for forming an aluminum ion beam from an aluminum-containing species to an ion source. One or more of a halide species and a halide molecule are introduced to the ion source, where the halide species is selected from a group consisting of atomic chlorine, atomic bromine, and atomic iodine, and the halide molecule comprises a halide selected from a group consisting of chlorine, bromine, and iodine. The one or more of the halide species and the halide molecule clean one or more components of the ion source and further react with the aluminum-containing species to generate an aluminum-halide vapor. The aluminum ion beam is further formed from at least the aluminum-halide vapor.
C23C 14/14 - Matériau métallique, bore ou silicium
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
84.
ION IMPLANTATION SYSTEM AND METHOD FOR IMPLANTING ALUMINUM USING NON-FLUORINE-CONTAINING HALIDE SPECIES OR MOLECULES
An ion implantation system, ion source, and method are provided for forming an aluminum ion beam from an aluminum-containing species to an ion source. One or more of a halide species and a halide molecule are introduced to the ion source, where the halide species is selected from a group consisting of atomic chlorine, atomic bromine, and atomic iodine, and the halide molecule comprises a halide selected from a group consisting of chlorine, bromine, and iodine. The one or more of the halide species and the halide molecule clean one or more components of the ion source and further react with the aluminum-containing species to generate an aluminum-halide vapor. The aluminum ion beam is further formed from at least the aluminum-halide vapor.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
85.
Dual source injector with switchable analyzing magnet
An ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. A first ion source defines a first ion beam directed toward the first entrance along a first beam path. A second ion source defines a second ion beam directed toward the second entrance along a second beam path. A magnet current source supplies a magnet current to the mass analyzing magnet. Magnet control circuitry controls a polarity of the magnet current based on a formation of the first or second ion beam. The mass analyzing magnet mass analyzes the respective first or second ion beam to define defining a mass analyzed ion beam along a mass analyzed beam path. At least one shield in the interior or exterior region prevents line-of-sight between the first and second ion sources. Beamline components modify the mass analyzed ion beam.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
G21K 5/04 - Dispositifs d'irradiation avec des moyens de formation du faisceau
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01L 21/04 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs ayant des barrières de potentiel, p. ex. une jonction PN, une région d'appauvrissement ou une région de concentration de porteurs de charges
86.
Fluorine based molecular co-gas when running dimethylaluminum chloride as a source material to generate an aluminum ion beam
An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
An ion source has an arc chamber defining an arc chamber volume. A reservoir is coupled to the arc chamber, defining a reservoir volume. The reservoir receives a source species to define a liquid within the reservoir volume. A conduit fluidly couples the reservoir volume to the arc chamber volume. First and second openings of the conduit are open to the respective reservoir and arc chamber volume. A heat source selectively heats the reservoir to melt the source species at a predetermined temperature. A liquid control apparatus controls a first volume of the liquid within the reservoir volume to define a predetermined supply of the liquid to the arc chamber volume. The liquid control apparatus is a pressurized gas source fluidly coupled to the reservoir to supply a gas to the reservoir and provide a predetermined amount of liquid to the arc chamber.
An ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. A first ion source defines a first ion beam directed toward the first entrance along a first beam path. A second ion source defines a second ion beam directed toward the second entrance along a second beam path. A magnet current source supplies a magnet current to the mass analyzing magnet. Magnet control circuitry controls a polarity of the magnet current based on a formation of the first or second ion beam. The mass analyzing magnet mass analyzes the respective first or second ion beam to define defining a mass analyzed ion beam along a mass analyzed beam path. At least one shield in the interior or exterior region prevents line-of-sight between the first and second ion sources. Beamline components modify the mass analyzed ion beam.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
89.
Dual source injector with switchable analyzing magnet
An ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. A first ion source defines a first ion beam directed toward the first entrance along a first beam path. A second ion source defines a second ion beam directed toward the second entrance along a second beam path. A magnet current source supplies a magnet current to the mass analyzing magnet. Magnet control circuitry controls a polarity of the magnet current based on a formation of the first or second ion beam. The mass analyzing magnet mass analyzes the respective first or second ion beam to define defining a mass analyzed ion beam along a mass analyzed beam path. At least one shield in the interior or exterior region prevents line-of-sight between the first and second ion sources. Beamline components modify the mass analyzed ion beam.
A61N 5/10 - RadiothérapieTraitement aux rayons gammaTraitement par irradiation de particules
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
G21K 5/04 - Dispositifs d'irradiation avec des moyens de formation du faisceau
H01L 21/04 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs ayant des barrières de potentiel, p. ex. une jonction PN, une région d'appauvrissement ou une région de concentration de porteurs de charges
An ion source has an arc chamber defining an arc chamber volume. A reservoir is coupled to the arc chamber, defining a reservoir volume. The reservoir receives a source species to define a liquid within the reservoir volume. A conduit fluidly couples the reservoir volume to the arc chamber volume. First and second openings of the conduit are open to the respective reservoir and arc chamber volume. A heat source selectively heats the reservoir to melt the source species at a predetermined temperature. A liquid control apparatus controls a first volume of the liquid within the reservoir volume to define a predetermined supply of the liquid to the arc chamber volume. The liquid control apparatus is a pressurized gas source fluidly coupled to the reservoir to supply a gas to the reservoir and provide a predetermined amount of liquid to the arc chamber.
An ion source 110 has an arc chamber 116 defining an arc chamber volume 140. A reservoir 144 is coupled to the arc chamber, defining a reservoir volume 146. The reservoir receives a source species to define a liquid 114 within the reservoir volume. A conduit 154 fluidly couples the reservoir volume to the arc chamber volume. Optionally, first and second openings 156,158 of the conduit are open to the respective reservoir and arc chamber volume. Optionally, a heat source 152 selectively heats the reservoir to melt the source species at a predetermined temperature. A liquid control apparatus 160 controls a first volume of the liquid within the reservoir volume to define a predetermined supply of the liquid to the arc chamber volume. Optionally, the liquid control apparatus is a pressurized gas source 174 fluidly coupled to the reservoir to supply a gas to the reservoir and provide a predetermined amount of liquid to the arc chamber.
H01J 27/08 - Sources d'ionsCanons à ions utilisant une décharge d'arc
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
92.
High incidence angle graphite for particle control with dedicated low sputter yield ion beam
An ion source for an ion implantation system is configured to form an ion beam from a predetermined species along a beamline, where the ion beam is at an initial energy. A deceleration component is configured to decelerate the ion beam to a final energy that is less than the initial energy. A workpiece support is configured to support a workpiece along a workpiece plane downstream of the deceleration component along the beamline. A beamline component is positioned downstream of the deceleration component along the beamline. The beamline component has a feature that is at least partially impinged by the ion beam, and where the feature has a surface having a predetermined angle of incidence with respect to the ion beam. The predetermined angle of incidence provides a predetermined sputter yield of the ion beam at the final energy that mitigates deposition of the ion species on the beamline component.
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
93.
HIGH INCIDENCE ANGLE GRAPHITE FOR PARTICLE CONTROL WITH DEDICATED LOW SPUTTER YIELD ION BEAM
An ion source for an ion implantation system is configured to form an ion beam from a predetermined species along a beamline, where the ion beam is at an initial energy. A deceleration component is configured to decelerate the ion beam to a final energy that is less than the initial energy. A workpiece support is configured to support a workpiece along a workpiece plane downstream of the deceleration component along the beamline. A beamline component is positioned downstream of the deceleration component along the beamline. The beamline component has a feature that is at least partially impinged by the ion beam, and where the feature has a surface having a predetermined angle of incidence with respect to the ion beam. The predetermined angle of incidence provides a predetermined sputter yield of the ion beam at the final energy that mitigates deposition of the ion species on the beamline component.
H01J 37/05 - Dispositifs électronoptiques ou ionoptiques pour la séparation des électrons ou des ions en fonction de leur énergie
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
An ion source has arc chamber having one or more radiation generating features, an arc chamber body enclosing an internal volume, and at least one gas inlet aperture defined therein. A gas source provides a gas such as a source species gas or a halide through the gas inlet aperture. The source species gas can be an aluminum-based ion source material such as dimethylaluminum chloride (DMAC). One or more shields positioned proximate to the gas inlet aperture provide a fluid communication between the gas inlet aperture and the internal volume, minimize a line-of-sight from the one or more radiation generating features to the gas inlet aperture, and substantially prevent thermal radiation from reaching the gas inlet aperture from the one or more radiation generating features.
An ion implantation system has an ion source to generate an ion beam, and a mass analyzer to define a first ion beam having desired ions at a first charge state. A first linear accelerator accelerates the first ion beam to a plurality of first energies. A charge stripper strips electrons from the desired ions defining a second ion beam at a plurality of second charge states. A first dipole magnet spatially disperses and bends the second ion beam at a first angle. A charge defining aperture passes a desired charge state of the second ion beam while blocking a remainder of the plurality of second charge states. A quadrupole apparatus spatially focuses the second ion beam, defining a third ion beam. A second dipole magnet bends the third ion beam at a second angle. A second linear accelerator accelerates the third ion beam. A final energy magnet bends the third ion beam at a third angle, and wherein an energy defining aperture passes only the desired ions at a desired energy and charge state.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
An ion implantation systemlOO has an ion source 104 to generate an ion beam 108, and a mass analyzer 112 to define a first ion beam 114 having desired ions at a first charge state. A first linear accelerator 116 accelerates the first ion beam to a plurality of first energies. A charge stripper 118 strips electrons from the desired ions defining a second ion beam 120 at a plurality of second charge states. A first dipole magnet 124 spatially disperses and bends the second ion beam at a first angle 125. A charge defining aperture 126 passes a desired charge state of the second ion beam while blocking a remainder of the plurality of second charge states. A quadrupole apparatus 128 spatially focuses the second ion beam, defining a third ion beam 130. A second dipole magnet 132 bends the third ion beam at a second angle 133. A second linear accelerator 134 accelerates the third ion beam. A final energy magnet 136 bends the third ion beam at a third angle 137, and wherein an energy defining aperture 138 passes only the desired ions at a desired energy and charge state.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/05 - Dispositifs électronoptiques ou ionoptiques pour la séparation des électrons ou des ions en fonction de leur énergie
An ion source has arc chamber having one or more radiation generating features, an arc chamber body enclosing an internal volume, and at least one gas inlet aperture defined therein. A gas source provides a gas such as a source species gas or a halide through the gas inlet aperture. The source species gas can be an aluminum-based ion source material such as dimethylaluminum chloride (DMAC). One or more shields positioned proximate to the gas inlet aperture provide a fluid communication between the gas inlet aperture and the internal volume, minimize a line-of-sight from the one or more radiation generating features to the gas inlet aperture, and substantially prevent thermal radiation from reaching the gas inlet aperture from the one or more radiation generating features.
An ion source has an arc chamber with a first end and a second end. A first cathode at the first end of the arc chamber has a first cathode body and a first filament disposed within the first cathode body. A second cathode at the second end of the arc chamber has a second cathode body and a second filament disposed within the second cathode body. A filament switch selectively electrically couples a filament power supply to each of the first filament and the second filament, respectively, based on a position of the filament switch. A controller controls the position of the filament switch to alternate the electrical coupling of the filament power supply between the first filament and the second filament for a plurality of switching cycles based on predetermined criteria. The predetermined criteria can be a duration of operation of the first filament and second filament.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 27/08 - Sources d'ionsCanons à ions utilisant une décharge d'arc
99.
Extended lifetime dual indirectly-heated cathode ion source
An ion source has an arc chamber with a first end and a second end. A first cathode at the first end of the arc chamber has a first cathode body and a first filament disposed within the first cathode body. A second cathode at the second end of the arc chamber has a second cathode body and a second filament disposed within the second cathode body. A filament switch selectively electrically couples a filament power supply to each of the first filament and the second filament, respectively, based on a position of the filament switch. A controller controls the position of the filament switch to alternate the electrical coupling of the filament power supply between the first filament and the second filament for a plurality of switching cycles based on predetermined criteria. The predetermined criteria can be a duration of operation of the first filament and second filament.
H01J 37/075 - Canons à électrons utilisant l'émission thermo-ionique de cathodes chauffées par bombardement de particules ou par irradiation, p. ex. par laser
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
Ion implantation systems and methods implant varying energies of an ion beam across a workpiece in a serial single-workpiece end station, where electrodes of an acceleration/deceleration stage, bend electrode and/or energy filter control a final energy or path of the ion beam to the workpiece. The bend electrode or an energy filter can form part of the acceleration/deceleration stage or can be positioned downstream. A scanning apparatus scans the ion beam and/or the workpiece, and a power source provides varied electrical bias signals to the electrodes. A controller selectively varies the electrical bias signals concurrent with the scanning of the ion beam and/or workpiece through the ion beam based on a desired ion beam energy at the workpiece. A waveform generator can provide the variation and synchronize the electrical bias signals supplied to the acceleration/deceleration stage, bend electrode and/or energy filter.
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériauMoyens de réglage de diaphragmes ou de lentilles associées au support
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
