d) of the corresponding components of the multi-component structure (145) onto the substrate (130). A corresponding deposition system (600; 700) is also proposed.
A solution for making multi-component structures (145) is proposed. A corresponding method comprises delivering a plurality of galvanic solutions (115) at least in part different from each other through corresponding delivering ports (110) and removing the galvanic solutions (115) being delivered through a plurality of removing ports (120) thereby creating corresponding dynamic drops (125). Corresponding deposition currents (Ia-Id) are set individually for the galvanic solutions (115) as a function of an amount of the components of the galvanic solutions (115) in the multi-component structure (145). The substrate (130) and the dynamic drops (125) are brought into contact with each other in succession, thereby transforming the dynamic drops (125) into corresponding dynamic menisci (135a- 135d) that galvanically deposit layers (140a-140d) of the corresponding components of the multi-component structure (145) onto the substrate (130). A corresponding deposition system (600; 700) is also proposed.
A61N 1/32 - Application de courants électriques par électrodes de contact courants alternatifs ou intermittents
A61N 1/36 - Application de courants électriques par électrodes de contact courants alternatifs ou intermittents pour stimuler, p. ex. stimulateurs cardiaques
4.
Photovoltaic cell with porous semiconductor regions for anchoring contact terminals, electrolitic and etching modules, and related production line
A photovoltaic cell is proposed. The photovoltaic cell includes a substrate of semiconductor material, and a plurality of contact terminals each one arranged on a corresponding contact area of the substrate for collecting electric charges being generated in the substrate by the light. For at least one of the contact areas, the substrate includes at least one porous semiconductor region extending from the contact area into the substrate for anchoring the whole corresponding contact terminal on the substrate. In the solution according to an embodiment of the invention, each porous semiconductor region has a porosity decreasing moving away from the contact area inwards the substrate. An etching module and an electrolytic module for processing photovoltaic cells, a production line for producing photovoltaic cells, and a process for producing photovoltaic cells are also proposed.
C03C 15/00 - Traitement de surface du verre, autre que sous forme de fibres ou de filaments, par attaque chimique
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
C25D 17/00 - Éléments structurels, ou leurs assemblages, des cellules pour revêtement électrolytique
A flexible electrode (1) for applying an electric field to the human body, comprising: a gripping portion (3); a deformable structure (5) having a first face (5a) fixed to the gripping portion (3); a flexible polymeric film (7) arranged on a flat second face (5b) of the deformable structure (5) and provided, on a flat face (7a) thereof facing outwards the electrode (1), with flat metal structures (10,11) defining at least one first electrode and one second electrode (A,B), surfaces (10a,11a) of the flat metal structures (10,11) facing outwards the polymeric film (7) being coplanar with the flat face (7a) of the polymeric film (7).
C12M 1/42 - Appareils pour le traitement de micro-organismes ou d'enzymes au moyen d'énergie électrique ou ondulatoire, p. ex. magnétisme, ondes sonores
An embodiment of an elastic contact device for electrically contacting electronic components is proposed. The contact device includes at least one basic module with a longitudinal axis, each one including an elastic core for defining an elasticity of the basic module (undergoing an axial elastic deformation in response to an axial compression), a first contact terminal element and a second contact terminal element coupled with the elastic core in axially opposed positions, and at least one elongated contact element extending axially between the first and second terminal elements, wherein each elongated element is configured to have a buckling axial critical load higher than zero for self-sustaining in absence of external forces during a production of the basic module and lower than a threshold compression (ranging approximately between 0.1% and 50%) for buckling thereby not contributing to the elasticity of the basic module during operation thereof.
H01R 12/00 - Association structurelle de plusieurs éléments de connexion électrique isolés les uns des autres, spécialement conçue pour des circuits imprimés, p. ex. des cartes de circuit imprimé [PCB], des câbles plats ou à ruban ou des structures similaires généralement planes, p. ex. barrettes de raccordement, blocs de connexionDispositifs de couplage spécialement conçus pour des circuits imprimés, des câbles plats ou à ruban ou des structures similaires généralement planesBornes spécialement conçues pour établir le contact avec, ou pour être insérées dans des circuits imprimés, des câbles plats ou à ruban ou des structures similaires généralement planes
7.
PHOTOVOLTAIC CELL WITH POROUS SEMICONDUCTOR REGIONS FOR ANCHORING CONTACT TERMINALS, ELECTROLITIC AND ETCHING MODULES, AND RELATED PRODUCTION LINE
A photovoltaic cell (100) is proposed. The photovoltaic cell includes a substrate (105; 105') of semiconductor material, and a plurality of contact terminals (Tf,Tb) each one arranged on a corresponding contact area (122) of the substrate for collecting electric charges being generated in the substrate by the light. For at least one of the contact areas, the substrate includes at least one porous semiconductor region (125) extending from the contact area into the substrate for anchoring the whole corresponding contact terminal on the substrate. In the solution according to an embodiment of the invention, each porous semiconductor region has a porosity decreasing moving away from the contact area inwards the substrate. An etching module (400) and an electrolytic module (700;700';800;800') for processing photovoltaic cells, a production line (900) for producing photovoltaic cells, and a process for producing photovoltaic cells are also proposed.
C25D 17/00 - Éléments structurels, ou leurs assemblages, des cellules pour revêtement électrolytique
C25F 7/00 - Éléments de construction des cellules, ou leur assemblage, pour l'enlèvement électrolytique de matières d'objetsEntretien ou conduite
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/285 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un gaz ou d'une vapeur, p. ex. condensation
8.
ELASTIC CONTACT DEVICE FOR ELECTRONIC COMPONENTS WITH BUCKLING COLUMNS
An elastic contact device (100;400A;400B; 500) for electrically contacting electronic components is proposed. The contact device includes at least one basic module (100), which has a longitudinal axis (110). In turn, each basic module includes an elastic core (105) for defining an elasticity of the basic module; the elastic core undergoes an axial elastic deformation in response to an axial compression. A first contact terminal element (115) and a second contact terminal element (120) are coupled with the elastic core in axially opposed positions. One or more elongated contact elements (125) extend axially between the first terminal element and the second terminal element. Each elongated element is configured to have a buckling axial critical load higher than zero and lower than a threshold compression.
An embodiment of a process of manufacturing an interconnection element for contacting electronic devices is proposed. The process starts with the step of forming a plurality of leads on a main surface of a first substrate; each lead has a first end and a second end. The second end of each lead is coupled with a second substrate. The second substrate and the first substrate are then spaced apart, so as to extend the leads between the first substrate and the second substrate. The process also includes the step of treating the main surface before forming the leads to control an adhesion of the leads on the main surface.
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
10.
METHOD FOR MAKING MICROSTRUCTURES BY CONVERTING POROUS SILICON INTO POROUS METAL OR CERAMICS
A method for making a micro structure (100) is proposed. The method starts with the step of providing a silicon substrate (102), which has a main surface. A porous silicon layer (103) - extending into the silicon substrate from the main surface - is then formed. The method continues by etching the porous silicon layer selectively to obtain a set of projecting microelements of porous silicon (112); each projecting microelement projects from a remaining portion of the silicon substrate ( 106), thereby exposing a corresponding external surface. The projecting microelements are then treated to obtain a set of corresponding conductive (115) or insulating (115 ') microelements; each conductive or insulating microelement is obtained by converting at least a prevalent portion of the porous silicon (extending into the corresponding projecting element from the external surface) into porous metal or ceramics, respectively.
H01L 23/367 - Refroidissement facilité par la forme du dispositif
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 25/10 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs ayant des conteneurs séparés
H01L 21/68 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le positionnement, l'orientation ou l'alignement
11.
INTERCONNECTION OF ELECTRONIC DEVICES WITH RAISED LEADS
A process of manufacturing an interconnection element (160; 160') for contacting electronic devices is proposed. The process starts with the step of forming a plurality of leads (130) on a main surface (110) of a first substrate (105); each lead has a first end (130a) and a second end (130b). The second end of each lead is coupled with a second substrate (140). The second substrate and the first substrate are then spaced apart, so as to extend the leads (130') between the first substrate and the second substrate. The process also includes the step of treating the main surface before forming the leads to control an adhesion of the leads on the main surface.
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
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