Abrégé

The invention relates to an apparatus for cleaning thin and/or breakable wafers (6), wherein the wafers (6) have their one side fixed on a carrier arrangement (2) and an interspace (7) is formed in each case between two adjacent wafers. The apparatus essentially comprises: - a spray arrangement (15), with which fluid is introduced into the respective interspaces (7) and having at least one spray element (16) which has a multiplicity of nozzles and is configured in two parts, wherein in each case one part is arranged laterally on a longitudinal side of the tank (14) such that the two parts run parallel to the longitudinal axis of the tank and have opposite directions of flow, and - a tank (14), which can be filled with fluid and is dimensioned such that it accommodates the carrier arrangement (2), and - an alternating control means, which can control the two parts of the at least one spray element (16) such that directly opposite nozzles are not activated at the same time, wherein the activation concerns the discharge or suction extraction of the fluid.

Classes IPC  ?

• H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives

Abrégé

The invention relates to the electrical contacting of treatment good (1) that is to be electroplated using e.g. continuous pass equipment, immersion bath equipment, so called cup-platers or fountain-platers and the like. The electrical contacts for feeding-in the bath current to the surface that is to be electroplated are metallized together with the treatment good. The necessary de-metallization of the contacts occurs inside the same treatment chamber together with the electrolyte (10) that fills the same. In practice, this de-metallization does not occur completely. At the contact (2), in the region of the electrolyte/air boundary (10), a metal ring (19) develops that must be manually removed. According to the present invention, the natural electrolyte/air boundary at the contacts (2) is appropriately moved e.g. by a controlled air stream (12) against the flow direction or the surface of the electrolyte. The air stream is switched on and directed in a way such that the region of the electrolyte/air boundary (10) that develops during metallization is entirely immersed during de-metallization. As a result of this, the contacts are completely de-metallized. A metal ring (19) cannot develop.

Classes IPC  ?

• C25D 5/08 - Dépôt avec déplacement de l'électrolyte, p. ex. dépôt par projection de l'électrolyte
• C25D 7/12 - Semi-conducteurs
• C25D 17/06 - Dispositifs pour suspendre ou porter les objets à revêtir
• H01L 21/288 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un liquide, p. ex. dépôt électrolytique

Abrégé

The invention relates to a set for creating a process reactor for forming metallic layers on at least one substrate, the layers being formed by the precipitation of metal ions contained in a fluid onto the substrates. Said set essentially comprises the following structural elements: a reactor housing (3) comprising two ends (4, 5), a fluid flowing through the reactor housing from one end to the other; a device (6) which is arranged in the region of the efflux (4) from the reactor housing (3) and is used to receive the substrate; at least one overflow (8) which is arranged in the region of the efflux (4) from the reactor housing (3) and via which the fluid (F) flowing in the direction of the substrate (2) can flow out of the reactor housing (3); a collecting tank (10) for receiving the fluid (F) flowing out via the overflow (8); means for redirecting the collected fluid into the reactor housing (3); and at least one anode. In order to obtain a largely homogeneous coating, the process reactor also optionally comprises at least one of the following structural elements: at least one flow adjusting device (S) for the targeted control of the fluid (F) inside the reactor housing (3); at least one field adjusting device (E) for the targeted control of the electrical field created inside the reactor housing (3); at least one auxiliary electrode (H) that can receive either a positive or negative potential and is arranged between the substrate (2) to be coated and the opposite end (5) of the reactor housing (3); at least one diaphragm (B) for orienting the electrical field created inside the reactor hosuing (3); at least one diaphragm (B) for orienting the flow of the fluid (F) inside the reactor housing (3); and at least one ring element (R) for reducing the inner diameter (3i) of the reactor housing (3).

Classes IPC  ?

• C25D 5/08 - Dépôt avec déplacement de l'électrolyte, p. ex. dépôt par projection de l'électrolyte
• C25D 17/00 - Éléments structurels, ou leurs assemblages, des cellules pour revêtement électrolytique
• C25D 17/02 - CuvesInstallations s'y rapportant
• C25D 21/18 - Régénération des bains d'électrolytes

Abrégé

The invention relates to the wet chemical or electrolytic treatment of planar good, i.e. a wafer, that is, according to the state of the art, treated by the aid of technically complex frames or grippers inside treatment chambers. Especially for fragile good, e.g. for solar cells made from silicon, the handling is quite time consuming, in particular if the bottom side of the good must not be wetted. According to the invention, the good 1 is placed over a vertically arranged treatment chamber 3 without frames, grippers or holders, in such a manner so that only the bottom side is wetted by the treatment fluid. By a rotational- symmetric stream 4 at the bottom side 7 of the good that is placed onto at least one support 2, the adhesion forces acting horizontally onto the good 1 neutralize each other. A lateral displacement of the good does not occur. Therefore, the commonly used limiters or lateral end stops can be omitted. According to the invention, the vertically acting components of the adhesion force cause the good 1 to adhere the supports or the contacts 2, respectively, providing a secure electrical contact for electrolytic treatment. For complete de-metallization of the contacts 2 the natural electrolyte/air boundary 25 is moved in the vicinity of the contacts by means of a gas stream 26 that is directed against the flow direction or against the level of the electrolyte. For solar cells, the metallization of contacts can be completely avoided by illumination of the bottom side that is to be electroplated, due to the contacts being located outside the electrolyte.

Classes IPC  ?

• C25D 5/08 - Dépôt avec déplacement de l'électrolyte, p. ex. dépôt par projection de l'électrolyte
• C25D 7/12 - Semi-conducteurs
• C25D 17/02 - CuvesInstallations s'y rapportant
• C25D 17/06 - Dispositifs pour suspendre ou porter les objets à revêtir
• H01L 21/288 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un liquide, p. ex. dépôt électrolytique

Abrégé

The invention relates to a device for cleaning thin wafers (6), said wafers (6) being immobilized with one side on a support device (2) and an interspace (7) being defined between two respective adjoining substrates. The device essentially consists of a shower device (15) which is used to introduce a fluid between the interspaces (7), and a tank (14) that can be filled with the fluid and is dimensioned to receive the support device (2). The invention is characterized in that optionally either the shower device (15) can be displaced relative to the stationary support device (2), or the support device (2) relative to the stationary shower device (15), or both the support device (2) and the shower device (15) can be displaced relative each other. The method according to the invention is characterized by showering, preferably in a cleaning step, the wafers with warm fluid, the support device (2) being displaced inside the tank, then ultrasound-cleaning them in cold fluid and again showering them with warm fluid.

Classes IPC  ?

• H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives

Abrégé

The invention relates to a device for cleaning thin wafers (6), said wafers (6) being immobilized with one side on a support device (2) and an interspace (7) being defined between two respective adjoining substrates. The device essentially consists of a shower device (16) which is used to introduce a fluid between the interspaces (7), a tank (14) that can be filled with the fluid and is dimensioned to receive the support device (2), and a pivoting device (15) for rotating the support device (2). The invention is characterized in that optionally either the shower device (16) can be displaced relative to the stationary support device (2), or the support device (2) relative to the stationary shower device (16), or both the support device (2) and the shower device (16) can be displaced relative each other. The method according to the invention is characterized by showering, preferably in a cleaning step, the wafers with warm fluid, the support device (2) being displaced inside the tank, then ultrasound-cleaning them in cold fluid and again showering them with warm fluid.

Classes IPC  ?

• H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives

Abrégé

The invention particularly relates to separating and transporting a disk-shaped substrate (102; 202), such as a solar wafer. The invention is characterized in that separation steps are performed within a fluid and that adhesive forces develop between a gripper (108; 208) and the substrate to be separated (102; 202) due to a thin fluid film, the forces enabling adhesion to the gripper (108; 208). Due to the removal transversely to the feed direction (105; 205) or particularly parallel to a flat extension of the substrates (102; 202), a very gentle and efficient separation of disk-shaped substrates (102; 202) at a high cycle time is achieved.

Classes IPC  ?

• B28D 5/00 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p. ex. des matériaux pour semi-conducteursAppareillages ou dispositifs à cet effet