Abrégé

The hybrid beam emittance uniformization system includes a charged particle beam generator for emitting a plurality of charged particles, a quadrupole magnet positioned relatively inline with the charged particle beam generator, and an adjustable aperture quadrupole positioned inline with the charged particle beam generator, wherein the combination of the quadrupole magnet and the adjustable aperture quadrupole concentrate the plurality of charged particles emitted by the charged particle beam generator into a relatively uniform square beam having a relatively uniform flux density all throughout a target area positioned a target distance from the charge particle beam generator.

Classes IPC  ?

• H01J 3/20 - Lentilles magnétiques
• H01J 3/32 - Dispositifs de déviation du rayon ou du faisceau suivant une seule ligne droite ou suivant deux lignes droites perpendiculaires au moyen de champs magnétiques uniquement

Produits et services

Manufacturing services in the field of photovoltaic technologies. Science and technology services; Engineering services; Research services; Design services; Product development; Testing, authentication and quality control; Design, engineering, research, development, and testing services in the field of photovoltaic technologies. Licensing services in the field of photovoltaic technologies.

Produits et services

Manufacturing services in the field of photovoltaic technologies. Science and technology services; Engineering services; Research services; Design services; Product development; Testing, authentication and quality control; Design, engineering, research, development, and testing services in the field of photovoltaic technologies. Licensing services in the field of photovoltaic technologies.

Produits et services

Manufacturing services in the field of photovoltaic technologies. Science and technology services; Engineering services; Research services; Design services; Product development; Testing, authentication and quality control; Design, engineering, research, development, and testing services in the field of photovoltaic technologies. Licensing services in the field of photovoltaic technologies.

Abrégé

The process for manufacturing a silicon wafer includes steps for mounting a float zone silicon work piece for exfoliation, energizing a microwave device for generating an energized beam sufficient for penetrating an outer surface layer of the float zone silicon work piece, exfoliating the outer surface layer of the float zone silicon work piece with the energized beam, and removing the exfoliated outer surface layer from the float zone silicon work piece as the silicon wafer having a thickness less than 100 micrometers.

Classes IPC  ?

• C30B 33/04 - Post-traitement des monocristaux ou des matériaux polycristallins homogènes de structure déterminée en utilisant des champs électriques ou magnétiques ou des rayonnements corpusculaires
• C30B 31/22 - Dopage par irradiation au moyen de radiations électromagnétiques ou par rayonnement corpusculaire par implantation d'ions

Abrégé

The process for manufacturing a silicon wafer includes steps for mounting a float zone silicon work piece for exfoliation, energizing a microwave device for generating an energized beam sufficient for penetrating an outer surface layer of the float zone silicon work piece, exfoliating the outer surface layer of the float zone silicon work piece with the energized beam, and removing the exfoliated outer surface layer from the float zone silicon work piece as the silicon wafer having a thickness less than 100 micrometers.

Classes IPC  ?

• C30B 13/24 - Chauffage de la zone fondue par irradiation ou par décharge électrique en utilisant des radiations électromagnétiques
• C30B 33/06 - Assemblage de cristaux
• C30B 29/06 - Silicium
• C30B 29/64 - Cristaux plats, p. ex. plaques, bandes ou pastilles
• B28D 5/00 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p. ex. des matériaux pour semi-conducteursAppareillages ou dispositifs à cet effet

Abrégé

The process for manufacturing wafers includes the steps of mounting an ingot as a work piece in a manner that permits rotation about a longitudinal axis of rotation and rotating the ingot about its longitudinal axis of rotation to permit a microwave device that generates an energized beam to penetrate an outer surface layer thereof. Furthermore, the process includes exfoliating the outer surface layer with the energized beam, removing the exfoliated outer surface layer from the ingot as a continuous planar strip and cutting the continuous planar strip into a wafer.

Classes IPC  ?

• C30B 33/06 - Assemblage de cristaux
• C30B 13/24 - Chauffage de la zone fondue par irradiation ou par décharge électrique en utilisant des radiations électromagnétiques
• C30B 33/04 - Post-traitement des monocristaux ou des matériaux polycristallins homogènes de structure déterminée en utilisant des champs électriques ou magnétiques ou des rayonnements corpusculaires
• B28D 1/02 - Travail de la pierre ou des matériaux analogues p. ex. briques, béton, non prévu ailleursMachines, dispositifs, outils à cet effet par sciage
• B28D 5/00 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p. ex. des matériaux pour semi-conducteursAppareillages ou dispositifs à cet effet
• C30B 29/06 - Silicium