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2023
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Invention
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Doping control in tmd (transition metal dichalcogenide) films. The disclosure relates to a method... |
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Invention
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2 crystallinity and increase tio2 refractive index for optical applications. 22 at moderate proce... |
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2022
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Invention
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Ferroelectric tunnel junction with multilevel switching.
The disclosed and claimed subject matte... |
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Invention
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Ferroelectric tunnel junction with multilevel switching. i.e.i.e.i.e., without the need for furth... |
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2020
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Invention
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Current compliance layers and memory arrays comprising thereof. Provided are novel compositions o... |
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2019
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Invention
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Thin film deposition in a high aspect ratio feature. Techniques for creating a high aspect featur... |
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2018
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Invention
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Heat treatable coated article having zirconium nitride and ito based ir reflecting layers. Coated... |
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2017
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Invention
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Inverse phase allotrope rare earth magnets.
Provided are inverse phase allotrope rare earth (IPA... |
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Invention
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Coated article having low-e coating with ir reflecting layer(s) and doped titanium oxide bi-layer... |
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Invention
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Vapor based site-isolated processing systems and methods. Embodiments provided herein describe sy... |
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2016
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Invention
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Dram capacitors and methods for forming the same.
Embodiments provided herein describe capacitor... |
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Invention
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Selector elements.
Provided are selector elements with active components comprising insulating m... |
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Invention
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Methods for forming high-k dielectric materials with tunable properties.
Embodiments provided he... |
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Invention
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Storage capacitors for displays and methods for forming the same.
Embodiments provided herein de... |
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Invention
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Combining materials in different components of selector elements of integrated circuits.
Provide... |
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Invention
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Current selectors formed using single stack structures. Provided are hybrid electrodes comprising... |
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Invention
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Methods and chemical solutions for cleaning photomasks using quaternary ammonium hydroxides.
Emb... |
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Invention
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Titanium nickel niobium alloy barrier for low-emissivity coatings. A method for making low emissi... |
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2015
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Invention
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Low temperature deposition of silicon containing layers in superconducting circuits.
Provided ar... |
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Invention
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Fluorine containing low loss dielectric layers for superconducting circuits.
Provided are superc... |
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Invention
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Low temperature deposition of low loss dielectric layers in superconducting circuits. Provided ar... |
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Invention
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Doped narrow band gap nitrides for embedded resistors of resistive random access memory cells. Pr... |
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Invention
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Doped ternary nitride embedded resistors for resistive random access memory cells. Provided are r... |
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Invention
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Electron barrier height controlled interfaces of resistive switching layers in resistive random a... |
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2014
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Invention
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Solid-state batteries with improved performance and reduced manufacturing costs and methods for f... |
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Invention
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Variable composition transparent conductive oxide layer and methods of forming thereof. Provided ... |
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Invention
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Particle removal with minimal etching of silicon-germanium.
Particle-clean formulations and meth... |
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Invention
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Semiconductor device metal-insulator-semiconductor contacts with interface layers and methods for... |
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Invention
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Methods for forming ferroelectric phases in materials and devices utilizing the same.
Embodiment... |
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Invention
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Igzo devices with metallic contacts and methods for forming the same.
Embodiments described here... |
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Invention
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Solid-state batteries with electrodes infused with ionically conductive material and methods for ... |
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Invention
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Simultaneous carbon and nitrogen doping of si in msm stack as a selector device for non-volatile ... |
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Invention
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Diamond like carbon (dlc) as a thermal sink in a selector stack for non-volatile memory applicati... |
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Invention
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Using metal silicides as electrodes for msm stack in selector for non-volatile memory application... |
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Invention
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Two stage forming of resistive random access memory cells. Provided are memory cells, such as res... |
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Invention
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Diamond like carbon (dlc) in a semiconductor stack as a selector for non-volatile memory applicat... |
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Invention
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Low-temperature deposition of metal silicon nitrides from silicon halide precursors.
Metal sili... |
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Invention
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Dram mimcap stack with moo2 electrode.
Steps are taken to ensure that the bulk dielectric layer ... |
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Invention
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Minimal contact wet processing systems and methods.
Embodiments provided herein describe systems... |
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Invention
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Photo-induced msm stack. Selector elements that can be suitable for nonvolatile memory device app... |
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Invention
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Indium zinc oxide for transparent conductive oxide layer and methods of forming thereof.
Provide... |
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Invention
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Systems and methods for wet processing substrates with rotating splash shield.
Embodiments provi... |
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Invention
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Sic—si3n4 nanolaminates as a semiconductor for msm snapback selector devices. Selector elements t... |
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Invention
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Solid-state batteries utilizing template layers for electrode formation and methods for forming t... |
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Invention
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Monx as a top electrode for tiox based dram applications.
A capacitor stack includes a base bott... |
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Invention
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Transparent resistive random access memory cells. Provided are resistive switching cells and meth... |
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Invention
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Method for forming a doped metal oxide for use in resistive switching memory elements. Methods fo... |
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2013
|
Invention
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Superconducting junctions. Provided are superconducting tunnel junctions, such as Josephson tunne... |
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2005
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G/S
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Industrial production machines for treating/processing semiconductor wafers and substrates, flat ... |
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G/S
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Silicon wafers; structured semiconductor wafers |
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G/S
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Semiconductor manufacturing machines, namely, combination cleaning and processing units used in t... |
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G/S
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Licensing of Intellectual Property in the field of integrated circuits; scientific research and d... |
