In the present invention, the opening/closing of a container for vacuum transfer is automated while the occurrences of operational malfunctions are reduced. A portable vessel (90) accommodates a processing object of a vacuum processing device while holding the object in a vacuum. The portable vessel comprises: a plate-like base body (91) on an upper surface of which is provided a protruding part (914) that is adjacent to at least a corner of the encircling shape of a groove (912) into which a seal member is fitted; and a lid body (92) configured such that side walls (923) are positioned directly above the groove.
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
2.
PLASMA TREATMENT DEVICE AND PLASMA TREATMENT METHOD
A plasma treatment device for subjecting the surface of a workpiece that is a tool to a plasma treatment using plasma, said plasma treatment device comprising: a vacuum container that forms a vacuum chamber; a stage that is installed in the vacuum chamber; an insulating container that is disposed on the stage and forms a treatment chamber in which the workpiece is accommodated; and an antenna that is disposed on the periphery of the insulating container in the vacuum chamber and generates plasma in the treatment chamber.
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
3.
BLADE EDGE PROTECTION MEMBER AND COATING FILM REMOVAL METHOD
A blade edge protection member used together with a coating film removal device for generating plasma in a vacuum container in which a cutting tool is disposed and subjecting the same to a plasma treatment using the plasma to remove a coating film formed on the surface of the cutting tool, said blade edge protection member comprising a plasma shielding part that is disposed in the vacuum container so as to cover the blade edge of the cutting tool and suppresses the incidence of plasma ions to the blade edge.
This quantum device comprises: a quantum material that includes a color center having an electron spin; a stage that has an installation surface; and a microwave resonator that irradiates the quantum material with microwaves. The quantum material has a first surface and a second surface which is a counter-surface of the first surface. The quantum material is disposed on the stage so that the first surface opposes the installation surface. The stage has an optical waveguide through which pass excitation light, which is radiated onto the quantum material, and fluorescence, which is generated by the quantum material. The microwave resonator radiates microwaves so that a first intensity, which is the intensity of the microwave on the first surface, and a second intensity, which is the intensity of the microwave on the second surface, are at least 0.5 times a third intensity, which is the maximum value of the intensity of the microwave.
The present invention achieves automated opening/closing of a vacuum transfer container while reducing occurrence of operational malfunction and occurrence of mechanical ware. A load lock chamber (10) of a vacuum treatment apparatus (1) comprises an opening/closing mechanism (13) for receiving a vessel (90) capable of storing an object to be treated in a vacuum state in an internal space partitioned by a base (91) and a lid (92). The opening/closing mechanism (13) is also for engaging the lid at two or more engagement portions (922) so as to lift up the lid and disengage the lid from the base held by a vessel holding portion (12).
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
6.
PULSE PATTERN GENERATION CIRCUIT AND MICROWAVE IRRADIATION DEVICE
Provided is a simple pulse pattern generation circuit that performs various operations on the electron spin of a quantum sensor element. A pulse pattern generation circuit (3) generates a microwave pulse pattern for operating the electron spin state of a quantum sensor element (109), said pulse pattern generation circuit comprising: a first clock generation circuit (10A) that generates a first clock (CLK1); an irradiation time pattern storage circuit (20) that stores a pulse pattern related to an irradiation time or a stop time of microwaves (MW) and outputs the pulse pattern related to the irradiation time or the stop time according to the first clock (CLK1); and a phase shift pattern storage circuit (30) that stores a pulse pattern related to a phase shift of the microwaves (MW) and outputs the pulse pattern related to the phase shift according to the first clock (CLK1).
The present invention provides electrical insulating oil having high heat dissipation characteristics and suitable handling properties under the Fire Service Act. An insulating oil composition, which is biodegradable electrical insulating oil derived from plants, comprising: a natural ester mainly containing triglyceride; and first insulating oil selected from a plant-derived ester and electrical insulating oil composed of linear alkylbenzene.
H01B 3/20 - Insulators or insulating bodies characterised by the insulating materialsSelection of materials for their insulating or dielectric properties mainly consisting of organic substances liquids, e.g. oils
A diamond spin sensor (100) includes a diamond including an NV－center having electron spin. The transverse relaxation time of the electron spin measured by the Ramsey method is defined as Ｔ２＊μsec. The concentration of the ＮＶ－center in the diamond is defined as Cppm. A value α calculated by （Ｔ２＊）１／３×Ｃ using Ｔ２＊ and C is less than 2.5. In a case where the transverse relaxation time of the electron spin measured by the Hahn echo method is T2 μsec, T2 is 15 or more. The average phase difference in relation to the entire surface of the diamond is 6 nm/mm or less.
A diamond spin sensor (100) comprises a diamond including NV -centers having an electron spin. Where a lateral relaxation time of the electron spin measured by the Hahn echo method is denoted by T2 μsec, and the concentration of NV - centers in the diamond is denoted by Cppm, the product of T2 and C is larger than 65.
This diamond sensor includes a diamond having a color center having electron spin, and a sensor head that accommodates the diamond, wherein: the diamond includes a reflective surface which reflects excitation light that has propagated through an optical system and has entered the inside of the diamond, and a flat surface that allows the excitation light to enter the inside of the diamond and allows radiation light emitted from the color center to exit the diamond; the reflective surface reflects the radiation light radiated from the color center that has been excited by the excitation light and causes the radiation light to condense in the direction of the optical system; a first off angle, which is an angle formed by a specific crystal plane of the diamond having a low index, is 3° or less with respect to a reference plane perpendicular to a predetermined reference direction fixed to the sensor head; and a surface roughness Ra of the flat surface is 20 nm or less.
A diamond spin sensor according to the present invention includes a diamond including an NV- center having an electron spin. When the lateral relaxation time of the electron spin measured by the Hahn echo method is T2 μsec and the fluorescence intensity of the fluorescence emitted from the diamond when irradiated with microwaves and laser light is represented by a current value InA output from an Si-PIN diode that receives the fluorescence, the product of T2 and I is larger than 3000, the wavelength of the microwaves is 2.07 GHz to 3.67 GHz, the wavelength of the laser light is 520 nm to 540 nm, the power of the laser light is 3 mW, and the light reception sensitivity of the Si-PIN diode is 0.36 A/W to 0.44 A/W at a wavelength of 600 nm and 0.40 A/W to 0.50 A/W at a wavelength of 660 nm.
This power converter control device for controlling a voltage output by a power converter connected to a power line for supplying power from a power system to a load includes: an opposing voltage calculation unit for calculating an opposing voltage that is a voltage having the same phase and the same amplitude as the voltage of the power system; a voltage change amount calculation unit for acquiring an output current command value that is a current output to the power converter, and calculating a voltage change amount when the power converter outputs the output current command value by open control from the output current command value; and a voltage command value output unit for outputting a voltage command value, which is a voltage obtained by combining the opposing voltage and the voltage change amount, to the power converter.
H02J 3/38 - Arrangements for parallelly feeding a single network by two or more generators, converters or transformers
H02J 3/12 - Circuit arrangements for ac mains or ac distribution networks for adjusting voltage in ac networks by changing a characteristic of the network load
H02M 7/48 - Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
Provided is a method for producing a top-gate type thin film transistor, said method comprising: a patterning step for patterning, by photolithography, an oxide semiconductor film that is formed on a substrate; a first pre-annealing step for subjecting, to an annealing process, the oxide semiconductor film after the patterning; a pre-processing step for subjecting, to a plasma process, a surface of the oxide semiconductor film after the annealing; and a gate insulating film formation step for forming a gate insulating film on the oxide semiconductor film after the plasma process.
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
H01L 21/316 - Inorganic layers composed of oxides or glassy oxides or oxide-based glass
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
This invention provides a capacitor capable of easily improving the contact property of a heat sink to a housing. A capacitor (1) is provided with: a plurality of capacitor elements (10); a housing (20) provided with a pair of side surface plates (21a, 21b); and a heat sink (30). In a condition in which the pair of side surface plates are disposed so as to form at least a portion of the housing and the heat sink is disposed so as to partition the space inside the housing, the pair of side surface plates and the heat sink are welded together.
The present invention achieves a capacitor capable of improving heat dissipation performance. This capacitor (1) comprises a plurality of capacitor elements (10), a housing (20), and a heat dissipation plate (30) formed of a metal having a higher thermal conductivity than the housing, the heat dissipation plate being joined to the housing.
Provided is a capacitive instrument transformer, in which the distance between a shield and an internal electrode is shorter than the distance between a voltage-dividing electrode and the internal electrode. Flashover between the internal electrode and the shield is more likely to occur than flashover between the internal electrode and the voltage-dividing electrode. Therefore, even under a circumstance in which flashover could occur between the internal electrode and the voltage-dividing electrode, flashover between the internal electrode and the shield is likely to occur, and therefore a situation in which high voltage intrudes into a low-voltage-side circuit can be effectively kept to a minimum.
According to the present invention, a capacitor voltage transformer is configured such that elongation of a voltage-dividing electrode in the extension direction of an internal electrode is restricted by a shield that sandwiches and holds the voltage-dividing electrode. As a result, the present invention does not readily experience changes in output voltage caused by thermal deformation of the voltage-dividing electrode, can achieve a more accurate output voltage, and can thereby achieve high measurement accuracy and low ratio error. In addition, the shield, which is joined to a housing, can undergo thermal deformation so as to undergo elongation in the extension direction of the internal electrode. When the shield elongates, force along the extension direction of the internal electrode is applied to the voltage-dividing electrode from the shield, further suppressing elongation of the voltage-dividing electrode in the extension direction of the internal electrode.
Disclosed is a method for manufacturing a thin film transistor, the method including: a semiconductor layer formation step for forming an oxide semiconductor layer on a substrate; a gate insulating layer formation step for forming a gate insulating layer, which is composed of a silicon nitride film (SiN:F) containing fluorine, on the oxide semiconductor layer; and a gate electrode formation step for forming a gate electrode on the gate insulating layer by a patterning method that uses a resist. The gate electrode formation step includes: a surface treatment step for forming a surface treatment layer, which improves the adhesion of a resist, on the gate insulating layer; and a resist coating step for applying a resist on the surface treatment layer.
H01L 21/318 - Inorganic layers composed of nitrides
H01L 21/363 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
This film forming device includes: a vacuum container in which a substrate is disposed; an antenna that generates inductively coupled plasma in the vacuum container and that includes a conductor element and a capacitor element that are electrically connected to each other in series; a high-frequency power supply that supplies high-frequency current to the antenna; and a gas supply mechanism that supplies raw material gas containing C, H, and O into the vacuum container. A carbon-based thin film is formed on the substrate in the vacuum container by a plasma CVD method using the inductively coupled plasma generated in the vacuum container by applying the high-frequency current to the antenna.
C23C 16/507 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
A diamond sensor according to the present invention includes a diamond that has a color center that has an electron spin, a transmission circuit that transmits electromagnetic waves, an irradiation unit that radiates the electromagnetic waves at the diamond, at least one of an impedance converter and a resonator, and a protection circuit for protecting an electromagnetic wave source that supplies the electromagnetic waves. The protection circuit functions as a capacitor for the electromagnetic waves and functions as an inductor at frequencies lower than the electromagnetic waves. When the diamond sensor includes an impedance converter and a resonator, the protection circuit is provided between the impedance converter and the resonator, between the transmission circuit and a transmission cable that connects the transmission circuit and the electromagnetic wave source, or between the transmission cable and the electromagnetic wave source.
G01R 33/24 - Arrangements or instruments for measuring magnetic variables involving magnetic resonance for measuring direction or magnitude of magnetic fields or magnetic flux
This diamond sensor includes: a diamond having a color center having an electron spin; an excitation light irradiation unit for irradiating the diamond with excitation light; a transmission antenna for transmitting electromagnetic waves; a reception antenna for receiving the electromagnetic waves transmitted from the transmission antenna; an electromagnetic wave irradiation unit for irradiating the diamond with the electromagnetic waves received by the reception antenna; a detection unit for detecting radiation light emitted from the color center of the diamond after the diamond is irradiated with the excitation light and the electromagnetic waves; and a composite having a conductive member and a dielectric member. The composite is disposed between the transmission antenna and the reception antenna and transfers the electromagnetic waves.
G01R 33/24 - Arrangements or instruments for measuring magnetic variables involving magnetic resonance for measuring direction or magnitude of magnetic fields or magnetic flux
22.
GAS-INSULATED SWITCHGEAR AND POWER RECEPTION/TRANSFORMATION EQUIPMENT
Provided are a gas-insulated switchgear and power reception/transformation equipment that can be made more compact. A gas-insulated switchgear according to the present invention comprises a bus chamber (2), first and second insulation spacers (40d, 40e) that are positioned away from the center of the bus chamber (2) in a third direction and respectively support first and second fixed-side electrodes of first and second disconnectors, first and second support members (40f, 40g) that respectively support first and second mobile-side electrodes to be aligned with the first and second fixed-side electrodes in the third direction, and straight first and second connection conductors that respectively connect a bus conductor and the first and second mobile-side electrodes.
This method for producing a diamond thin film involves synthesizing a diamond thin film on a base material through a plasma CVD method, wherein a raw material gas containing C, H, and O is supplied to a vacuum vessel in which the base material is disposed, high-frequency current is applied to an antenna that is disposed inside or outside the vacuum vessel and that has a conductor element and a capacitive element which are electrically connected to each other in series to generate inductively coupled plasma inside the vacuum vessel, and the generated inductively coupled plasma is used for the plasma CVD method. When the diamond thin film is being synthesized, the plasma has the following characteristics: the electron temperature is 1.0 eV or more and 2.0 eV or less; the electron density is 1.0 × 1011cm-3or more and 1.0 × 1012cm-3or less; and the ion saturation current is 1.0 × 10-4A or more and 1.0 × 10-2 A or less.
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
This diamond spin sensor includes: a diamond that includes a color center having electron spin; and a heat transfer part that contacts the diamond. The heat transfer part is fixed to an object, and at least one of a magnetic field, the current, and the temperature of the object is detected by irradiating a color sensor with excitation light and then measuring the fluorescence emitted from the color center.
G01R 33/20 - Arrangements or instruments for measuring magnetic variables involving magnetic resonance
G01K 11/3213 - Measuring temperature based on physical or chemical changes not covered by group , , , or using changes in transmittance, scattering or luminescence in optical fibres at discrete locations in the fibre, e.g. using Bragg scattering using changes in luminescence, e.g. at the distal end of the fibres
G01R 15/24 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using light-modulating devices
This diamond spin sensor system includes: a sensor part that includes diamond having a color center with an electron spin; a control power supply part that generates excitation light for irradiating the sensor part; and a joint part that connects the sensor part and the control power supply part. The joint part transmits the excitation light to the sensor part and irradiates the diamond therewith, and transmits, to the control power supply part, fluorescence radiated from the diamond.
Provided is a coating removal method for removing a coating formed on the surface of a tool, which is achieved by generating plasma in a vacuum container in which the tool, having a crest-valley structure in which crest and valley parts are alternately arranged on the surface, is disposed and performing plasma treatment with plasma. The coating removal method performs switching once or more between a high-pressure plasma treatment step, in which plasma treatment is performed with the vacuum container pressure set to a predetermined first pressure value, causing the removal speed for the coating at the bottom of the valley parts to be greater than the removal speed for the coating at edges of the valley parts, and a low-pressure plasma treatment step, in which plasma treatment is performed with the vacuum container pressure set to a second pressure value that is less than the predetermined first pressure value, causing the removal speed for the coating at edges of the valley parts to be greater than the removal speed for the coating at the bottom of the valley parts.
The transformation system (1) includes: a PVT (11) having a primary winding (PW) that receives a primary voltage from a power line (PL) of a power system on the primary side, and a secondary winding (SW) that outputs a secondary voltage lower than the primary voltage on the secondary side; a first CT (13) that is located upstream of the PVT (11) and downstream of the power line (PL); and a second CT (21) that is located on a line connecting the primary ground side of the primary winding (PW) and the ground terminal.
The present invention measures, with high sensitivity, the phase difference between a plurality of physical fields. A phase difference measurement device (10) comprises: an electromagnetic irradiation unit (2) that repeatedly irradiates a quantum sensor element (1) with electromagnetic waves for manipulating an electron spin state of the quantum sensor element (1) which changes via interaction with a second physical field or a first physical field generated by an AC signal; and a phase difference measurement unit (3) that acquires a plurality of electron spin states after interaction with the second physical field or the first physical field, and measures the phase difference between a plurality of physical fields on the basis of the acquired plurality of electron spin states.
G01R 33/12 - Measuring magnetic properties of articles or specimens of solids or fluids
G01R 33/032 - Measuring direction or magnitude of magnetic fields or magnetic flux using magneto-optic devices, e.g. Faraday
G01R 33/26 - Arrangements or instruments for measuring magnetic variables involving magnetic resonance for measuring direction or magnitude of magnetic fields or magnetic flux using optical pumping
Provided is a plasma processing apparatus capable of performing required plasma processing on an object to be processed inside a processing chamber using a plurality of antennas, while stabilizing plasma. A plasma processing apparatus (1) comprises: a housing (2); a plurality of antennas (7) for generating a magnetic field for generating plasma inside the housing (2); at least two power supplies (8) for supplying a high-frequency current for generating a magnetic field to each of the plurality of antennas (7); and a control unit (C). In order to generate plasma intermittently at a required periodicity, the power supplies (8) supply a high-frequency current for generating plasma in a first interval of a required duty ratio among the periods. The control unit (C) individually controls the duty ratios of the at least two power supplies (8).
The present invention provides a plasma processing device capable of appropriately detecting the temperature of a substrate. A plasma processing device (1) comprises: an antenna (7); a high-frequency power supply (8); and at least one detection unit (D) for detecting the temperature of a substrate (W). The high-frequency power supply periodically increases and decreases the magnitude of a high-frequency current, thereby causing plasma to occur intermittently, and the detection unit detects the temperature of the substrate in synchronization with the turning-off of the plasma.
This diamond spin sensor includes: a diamond that includes a color center having electron spin; and an optical waveguide that transmits excitation light projected to the diamond and fluorescence emitted from the diamond. In a state in which the diamond is disposed in an environment where there is radiation of at least １μＧｙ／ｈ, a magnetic field, an electric field, or the temperature in the environment is measured using the color center.
G01R 33/26 - Arrangements or instruments for measuring magnetic variables involving magnetic resonance for measuring direction or magnitude of magnetic fields or magnetic flux using optical pumping
G01N 24/00 - Investigating or analysing materials by the use of nuclear magnetic resonance, electron paramagnetic resonance or other spin effects
G01R 33/20 - Arrangements or instruments for measuring magnetic variables involving magnetic resonance
32.
DIAMOND SPIN SENSOR AND METHOD FOR MANUFACTURING SAME
This diamond spin sensor includes: a diamond substrate; and inclined surfaces formed on the diamond substrate. Color centers having electron spin are formed on the inclined surfaces. Among the color centers formed on the inclined surfaces, the color centers having a color center axis perpendicular to the inclined surfaces exist at a proportion of at least two times the existence of color centers having a color center axis which is not perpendicular to the inclined surfaces.
A plasma processing device (1) comprising a vacuum container (2) which accommodates therein a workpiece (W), a high-frequency window (WR) which introduces a high-frequency magnetic field into the vacuum container (2), an antenna (7) which is provided so as to face the high-frequency window (WR) and generates the high-frequency magnetic field, a turntable (3) which rotates inside the vacuum container (2), and an application mechanism (SM) which applies a predetermined bias voltage to the workpiece (W). Further, the application mechanism (SM) comprises a holder (H) provided to the turntable (3) so as to hold the workpiece (W) and an electrode plate (SM2) electrically connected to the holder (H) inside the vacuum container (2). The application mechanism (SM) applies the bias voltage from the electrode plate (SM2) to the workpiece (W) positioned between the antenna (7) and a rotary shaft (3b) of the turntable (3).
A plasma processing device 100 comprises: a vacuum container 1; an antenna 2 provided outside the vacuum container 1; a dielectric plate 7 closing an opening 1x which is formed in the vacuum container 1 in a position facing the antenna 2; and a distance adjustment mechanism 8 for adjusting the distance between the antenna 2 and the dielectric plate 7. The distance adjustment mechanism 8 includes an inclined surface 81a provided between the antenna 2 and the dielectric plate 7 and in contact with the lower side of the antenna 2, and a moving mechanism 82 for adjusting the distance between the antenna 2 and the dielectric plate 7 by moving the inclined surface 81a in a direction transverse to the longitudinal direction of the antenna 2.
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
C23C 16/507 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Provided is an ion source including: a plasma generation container that has an elongated shape having an internal space into which an ion source gas is introduced and that has an ion extraction port on a side wall along a longitudinal direction thereof; a plasma generation means for generating plasma in the internal space by ionizing the ion source gas; and an extraction electrode system that is provided outside the plasma generation container and that extracts an ion beam from the internal space through the ion extraction port, wherein the plasma generation means includes, outside the plasma generation container, an antenna provided along the longitudinal direction, a high-frequency power source that applies a high frequency to the antenna, and a magnetic field transmission window that is formed at a position facing the antenna in a side wall of the plasma generation container and that allows a high-frequency magnetic field generated at the antenna to be transmitted into the internal space therethrough.
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
An ion source comprising: a plasma-generating means provided with a plasma-generating vessel that has an internal space into which an ion source gas is introduced, the plasma-generating vessel having an ion extraction port formed in one side wall thereof, an antenna that ionizes the ion source gas to generate plasma in the internal space, the antenna being provided outside the plasma-generating vessel and being connected to a high-frequency power source to generate a high-frequency magnetic field, and a magnetic field transmission window that is formed in a side wall of the plasma-generating vessel at a position facing the antenna and that allows the high-frequency magnetic field generated from the antenna to pass through the internal space; a discharge electrode provided in the internal space near the ion extraction port; and an extraction electrode system that is provided outside the plasma-generating vessel and that extracts an ion beam from the internal space through the ion extraction port.
A plasma processing device (100) for generating plasma in a vacuum container (1) by applying a high-frequency current to an antenna (2) provided outside the vacuum container (1), the plasma processing device comprising: a slit plate (6) that closes an opening (1x), of the vacuum container (1), formed at a position facing the antenna (2); a dielectric plate (7) that closes, from the outside of the vacuum container (1), a plurality of slit openings (6x) formed in the slit plate (6); a plurality of mask members (8) that are provided for the respective slit openings (6x) and that cover the slit openings (6x) from the inside of the vacuum container (1) by being spaced apart from the openings; and a fixation mechanism (9) that fixes the plurality of mask members (8) in correspondence with the respective slit openings (6x).
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
A plasma treatment device (1) comprises: a vacuum vessel (10) that comprises a peripheral wall (10a) formed from a dielectric and has accommodated therein a table on which to-be-treated objects (20) are disposed; an antenna (12) that is provided outside of the vacuum vessel so as to be rotatable around the peripheral wall and produces a high frequency magnetic field for generating plasma in the vacuum vessel; and a mask (30) that is provided between the table in the vacuum vessel and the peripheral wall and has a plurality of openings (30c) through which the high frequency magnetic field passes.
A plasma processing device (1) comprises: a vacuum vessel (2) that contains a workpiece (W) in an interior of said vacuum vessel; a high-frequency window (WR) that introduces a high-frequency magnetic field into the interior of the vacuum vessel (2); an antenna (7) that is provided so as to face the high-frequency window (WR) and generates the high-frequency magnetic field; and a turntable (3) on which the workpiece (W) is placed, said turntable rotating. The plasma processing device (1) further comprises a blocking plate (4) that is provided in the interior of the vacuum vessel (2) so as to be above the turntable (3) and to face the high-frequency window (WR), said blocking plate blocking a plasma and dividing the interior of the vacuum vessel (2) into a plasma processing area (PA) and a cooling area (CA), wherein the blocking plate (4) has formed therein a passage hole (4b1) that allows passage therethrough of the workpiece (W) that is placed on the turntable (3).
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
40.
PLASMA TREATMENT DEVICE AND METHOD OF CONTROLLING PLASMA TREATMENT DEVICE
The purpose of the present invention is to provide a plasma treatment device having a simple configuration which makes it possible to fully confirm a state of plasma within a treatment chamber. A plasma treatment device (1, 201) is provided with at least one antenna (71-73), and a plurality of light-receiving units (PD1-PD5) for detecting the light emission intensity of a plasma generation region. The plurality of light-receiving units include a first light-receiving unit (PD1) and a second light-receiving unit (PD2) that are arranged along a first direction in which at least one antenna extends.
An antenna device 10 for generating a plasma P by flowing a high-frequency current comprises: an antenna 3 forming a linear shape; an insulating cover 4 covering the outer circumferential surface 3c of the antenna 3 and forming a straight tube shape; and a projecting insulating portion provided between axial both end portions 3a, 3b of the antenna 3, projecting further toward the inner circumferential surface 4a side of the insulating cover 4 than the outer circumferential surface 3c of the antenna 3, and formed of an insulating material.
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
This film removal device (100) comprises: a vacuum chamber (1) holding a workpiece (W1); an electrode (2) provided in the vacuum chamber (1) and having a first end (21) and a second end (22) that is disposed in a recess (W2) formed in the workpiece (W1); a gas feed mechanism (4) that feeds a gas from the first end (21) into the interior of the electrode (2); and a high-frequency power source (8) that applies a high-frequency voltage to the electrode.
The present invention provides a plasma processing apparatus which is capable of perceiving the state of an object that is subjected to plasma processing in real time. This plasma processing apparatus (1) is provided with an antenna (8), a power supply (9) which supplies a high-frequency current for the generation of a magnetic field to the antenna (8), an imaging unit for taking an image of the inside of a processing chamber, and a control unit. The power supply (9) intermittently generates a plasma by periodically increasing and decreasing the magnitude of the high-frequency current. The control unit controls the imaging unit so as to take, as a first image, an image of the inside of the processing chamber synchronized with turn-off of plasma.
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
C23C 16/52 - Controlling or regulating the coating process
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
Provided is a plasma processing device which enables an improvement in maintainability even when an inner cover is provided. A plasma processing device (1) comprises: a housing (2) that is provided with an opening (2b) through which the interior and exterior of a processing chamber are in communication with each other; a vacuum cover (4) that is removably attached to the housing (2) and that closes the opening (2b); a rod-like antenna (8) which is for generating plasma; and an antenna cover (5) that forms, between the antenna cover (5) and the vacuum cover (4), an antenna accommodation space (AK) which surrounds the antenna (8). The antenna cover (5) is divided into a plurality of parts along the longitudinal direction of the antenna (8). A cover (14) is provided so as to cover parts where the antenna cover (5) is divided.
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
C23C 14/40 - Diode sputtering with alternating current discharge, e.g. high-frequency discharge
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
Provided is a plasma processing device capable of easily achieving a uniform density of plasma in the longitudinal direction of an antenna. This plasma processing device (1) comprises a vacuum container (2), a high-frequency window (3), and an antenna part (AP). The antenna part (AP) comprises: an antenna (7); a first conductor (9a) and a second conductor (9b); a first capacitor part (8a) which changes a first connection angle between the antenna (7) and the first conductor (9a); and a second capacitor part (8b) which changes a second connection angle between the antenna (7) and the second conductor (9b).
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
This plasma treatment device vacuum-treats, using plasma, an object to be treated disposed in a treatment chamber, and comprises: a vacuum vessel that is formed by bending a wall forming the treatment chamber so as to form a convex shape protruding from the atmosphere side toward the treatment chamber side, and has a protruding portion in which an opening penetrating in a thickness direction is formed; an antenna that is provided outside the treatment chamber and within a recess formed by an atmosphere-side wall surface of the protruding portion, is connected to a high-frequency power source, and generates a high-frequency magnetic field; a dielectric plate that is disposed within the recess so as to close the opening of the protruding portion from the atmosphere side, and transmits the high-frequency magnetic field generated from the antenna into the treatment chamber; and a support member that is attached to the recess and elastically deformable, and can be selectively disposed at a support position where the support member comes into contact with the dielectric plate, and biases and supports the dielectric plate toward the wall surface of the recess by elastic force or a retreat position where the support member is retreated from the support position.
A plasma processing device that applies a high-frequency current to an antenna provided outside a vacuum container forming a processing chamber to generate plasma inside the processing chamber, comprising: a slit plate that is provided to block an opening formed in a position on the vacuum container directed to the antenna; and a dielectric plate that blocks slits formed on the slit plate from outside of the vacuum container, the slit plate being provided with an annular frame and a plurality of beam members spanning the frame in an aligned manner, and the slits being formed by gaps between the plurality of beam members.
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
The present invention provides a plasma processing device that can easily be made compact even when providing a plurality of antennas. This plasma processing device (1) comprises a vacuum container (2) and an antenna unit (14). The antenna unit (14) is provided with: a conductor (14a1); two antennas (14b, 14c) provided in parallel; a first capacitor (C1a) that has a conductor-side electrode (C11) and a first antenna electrode (C12a) connected to the antenna (14b); and a second capacitor (C1b) having the conductor-side electrode (C11) and a second antenna electrode (C12b) connected to the antenna (14c).
This determination device (1) comprises an acquiring unit (10) that acquires the temperature or pressure inside a tank (50) of a circuit breaker (5), and a determining unit (20) that determines, on the basis of the temperature or pressure inside the tank, the presence of an arc that is generated accompanying vacuum deterioration of a vacuum valve (60) housed inside the tank. The determination device (1) is capable of suitably determining a change in the degree of vacuum in a vacuum container.
Provided is a plasma processing device capable of checking an antenna and the surrounding state thereof even when an inner cover is provided. This plasma processing device (1) comprises: a housing (2) provided with a first opening (2b); a vacuum cover (4) which is removably attached to the first opening (2b) and closes the first opening (2b); a dielectric antenna cover (5) which is supported on the inside of the first opening (2b); an antenna (8) which is disposed in an antenna accommodation space (AK) formed by being surrounded by at least the vacuum cover (4) and the antenna cover (5), and is for generating inductively coupled plasma; a transparent view port (4b) provided to the vacuum cover (4); and an optical sensor (14) which receives light which is inside the antenna accommodation space (AK) and has passed through the view port (4b).
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
C23C 16/52 - Controlling or regulating the coating process
This plasma treatment device (1) comprises: a casing (2) in which a first opening (2b) is provided; a vacuum cover (4) that is removably attached to the first opening (2b), the vacuum cover (4) sealing the first opening (2b); an antenna cover (5) that is supported inside the first opening (2b), the antenna cover (5) having dielectric properties; and an antenna (8) for generating a plasma having inductive coupling properties, the antenna (8) being disposed in an antenna accommodation space (AK) formed so as to be surrounded by at least the vacuum cover (4) and the antenna cover (5). The antenna cover (5) opens on the vacuum-cover (4) side, and a cover opening (5c) that constitutes part of the antenna accommodation space (AK) is formed in the antenna cover (5), the cover opening (5c) enabling the antenna cover (5) to be removed through the first opening (2b).
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
The present invention realizes a plasma treatment device with easily adjustable antenna height. A plasma treatment device (1) comprises: an outer cover (20) attached to an enclosure (10) so as to close a first opening (12) in the enclosure; an inner cover (30) partitioning the space between a treatment chamber (11) and the outer cover; an antenna (40) for generating plasma inside the treatment chamber; an insertion member (45) coupled to the antenna; and a position adjustment mechanism (60) that displaces the insertion member with the outer cover attached.
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
C23C 16/52 - Controlling or regulating the coating process
NATIONAL UNIVERSITY CORPORATION KOBE UNIVERSITY (Japan)
NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM (Japan)
TOKYO INSTITUTE OF TECHNOLOGY (Japan)
NATIONAL UNIVERSITY CORPORATION OKAYAMA UNIVERSITY (Japan)
ASAHI GROUP HOLDINGS, LTD. (Japan)
FUNCTIONAL FLUIDS LTD. (Japan)
NISSIN ELECTRIC CO., LTD. (Japan)
MORIMATSU INDUSTRY CO., LTD. (Japan)
Inventor
Suzuki Hiroshi
Hidema Ruri
Itaya Yoshinori
Kato Yukitaka
Kobayashi Noriyuki
Kubota Mitsuhiro
Nakaso Koichi
Kawamura Kimito
Fujioka Keiko
Kaki Hirokazu
Marumo Kenji
Abstract
Provided is a heat regeneration system in which a heat source necessary for a process is regenerated with a waste heat. This heat regeneration system utilizes a hot waste heat and a cold waste heat discharged from a process to convert the hot waste heat and the cold waste heat respectively into a necessary high-temperature heat and a necessary low-temperature heat. This heat regeneration system is provided with: (a) a thermal amplifier 4 in which an adsorbent that utilizes a hot waste heat as an adsorption heat is stored; (b) a thermal battery 5 in which a latent heat storage material capable of storing an output heat from the thermal amplifier is stored; (c) a thermal transistor 2 in which evaporated water in a high-pressure absorber is absorbed in the absorption solution, a temperature-risen heat is extracted with a heat exchanger and is output as a high-temperature heat, water is evaporated with a low-pressure evaporator, a cold waste heat discharged from a low-temperature process 7 by the action of a steam latent heat is cooled to output a low-temperature heat, and the absorption solution is regenerated using a latent heat of the latent heat storage material; and (d) a thermal booster 3 in which the temperature of the high-temperature heat is risen by a hydration reaction of a chemical heat storage material, a heat is stored by a dehydration reaction of the chemical heat storage material using the high-temperature heat, steam generated by the dehydration reaction is condensed using the low-temperature heat to promote the regeneration of the chemical heat storage material, and a heat source necessary for the process is produced.
NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY (Japan)
NISSIN ELECTRIC CO., LTD. (Japan)
Inventor
Sameshima, Toshiyuki
Setoguchi, Yoshitaka
Ando, Yasunori
Sakai, Toshihiko
Abstract
Provided is a method for generating a fixed charge in an insulating film on the back channel side of a semiconductor device that has a channel layer including an oxide semiconductor, comprising forming the insulating film, followed by forming a metal film on the surface of the insulating film, and performing ion injection to the insulating film via the metal film to generate a fixed charge in the insulating film.
A method for controlling a fixed electric charge within an insulation film used in a semiconductor device, the method for controlling a fixed electric charge including forming a metal film on the surface of the insulation film, and injecting ions into the insulation film via the metal film, to thereby manifest a fixed electric charge in the insulation film.
This method is for controlling fixed electric charges in an insulating layer used for a semiconductor device, and involves: performing ion injection into the surface layer portion of the insulating layer after the insulating layer has been formed; forming a cap layer including a metal film or an insulating film on the surface of the insulating layer after the ion injection is performed; and causing the fixed electric charges to emerge in the insulating layer by carrying out heat treatment on the insulating layer having the cap layer formed on the surface.
This film forming device includes: a vacuum container in which a substrate is disposed; an antenna that generates inductively coupled plasma in the vacuum container and that includes a conductor element and a capacitor element that are electrically connected to each other in series; a high-frequency power supply that supplies high-frequency current to the antenna; and a gas supply mechanism that supplies raw material gas containing C, H, and O into the vacuum container. A carbon-based thin film is formed on the substrate in the vacuum container by a plasma CVD method using the inductively coupled plasma generated in the vacuum container by applying the high-frequency current to the antenna.
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
58.
CAPACITOR VOLTAGE-DIVIDING TYPE TRANSFORMER AND VOLTAGE TRANSFORMATION APPARATUS
Provided is a capacitor voltage-dividing type transformer which can easily adjust low-voltage side capacitance. A capacitor voltage dividing type transformer (10) comprises: a main circuit conductor (11) to which a high voltage is applied and which extends in the axial direction; an insulator cylinder (12) which has a cylindrical shape and is disposed coaxially with the main circuit conductor at the outside of the main circuit conductor; an intermediate electrode (13) that covers at least a part of the outside of the insulator cylinder; an insulating film (14) that covers the intermediate electrode; and a grounding electrode (15) that covers at least a part of the insulating film.
The present invention provides a compact plasma treatment device that can apply a plasma treatment to a continuously supplied film. A plasma treatment device (1) comprises a treatment chamber (2) where a prescribed plasma treatment is applied to a substrate (H1) to be treated. The interior of the treatment chamber (2) comprises: a drum (6) that guides the substrate (H1) to be treated supplied continuously to the treatment chamber (2); and an antenna (8) for generating an inductively coupled plasma in the interior of the treatment chamber (2). The antenna (8) is disposed inside the drum (6) and the plasma treatment is applied to the substrate (H1) to be treated on the drum (6).
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
Provided is a sputtering device capable of increasing plasma density in the vicinity of the target. The sputtering device (1) comprises: a target (Tr) disposed inside a vacuum vessel (2) so as to face an object being treated (H1) that is loaded on a stage (H); a high frequency window (11) that is provided with a metal sheet (12) that has a slit (12s) and a dielectric (13), introduces a high frequency magnetic field inside the vacuum vessel (2) to generate plasma inside the vacuum vessel (2), and is provided on the wall surface of the vacuum vessel (2) where the target (Tr) is attached; and a linear antenna (14) that is disposed outside the vacuum vessel (2) near the high frequency window (11) and generates a high frequency magnetic field. The high frequency window (11) has a semicylindrical part (11a) provided so that the axis is parallel to said wall surface.
Provided is a sputtering device which can increase plasma density near a target. A sputtering device (1) comprises: a target (Tr) which is disposed inside a vacuum container (2) and has a facing surface (Tr1) that faces an article to be treated (H1) mounted on a stage (H); a radio-frequency window (11) which is provided in a wall surface of the vacuum container (2), and allows a radio-frequency magnetic field to enter the vacuum container (2) in order to generate a plasma inside the vacuum container (2) due to being provided with a dielectric (13) and a metal plate (12) having a slit (12a); and a linear antenna (14) which is disposed near the radio-frequency window (11) outside the vacuum container (2) and generates a radio-frequency magnetic field. The radio-frequency window (11) is disposed such that the principal surface on the inside of the vacuum container (2) tilts in the direction of the target (Tr) from a plane parallel to the opposing surface (Tr1).
Provided is a plasma treatment device capable of appropriately controlling the movements of charged particles. A plasma treatment device (1) is provided with a treatment chamber (2). The plasma treatment device is provided with, within the treatment chamber (2), a stage (3) on which a substrate to be treated (H1) as an object to be treated is installed, an antenna (4) for generating inductively coupled plasma within the treatment chamber (2), and an internal electrode (8) to which a predetermined potential is applied.
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
In a case in which the capacitance of a capacitance element that is provided to an antenna is increased, a current is made to flow sufficiently evenly to each second electrode of said capacitance element. An antenna (3) comprises an antenna element (31) and a capacitance element (32). The capacitance element (32) has a first electrode (32A) and a second electrode (32B). A plurality of through holes (H1) into which a plurality of rod-shaped electrodes (32C) of the second electrode (32B) are inserted are formed in the inside of a first cylinder section (321A) of the first electrode (32A), aligned along a side surface (ES1) of the first cylinder section (321A).
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
C23C 14/40 - Diode sputtering with alternating current discharge, e.g. high-frequency discharge
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
Provided is a plasma treatment device which generates plasma in a vacuum container by supply of a high frequency current to an antenna provided outside the vacuum container, said plasma treatment device comprising: a slit plate which closes an opening that is formed in the vacuum container so as to face the antenna; a dielectric plate which closes, from the outside of the vacuum container, a slit formed in the slit plate; and a mask plate which covers the slit from the inside of the vacuum container with a gap therebetween.
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
A sputtering apparatus for sputtering a target using a plasma generated by supplying a high frequency power to an antenna, the sputtering apparatus comprising: a dummy electrode provided around the target and being equipotential to the target; and an anode electrode at ground potential that is provided so as to cover a surface of the dummy electrode facing the same direction as a sputtering surface of the target.
H01L 21/363 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
The present invention measures, with high sensitivity, the phase difference between a plurality of physical fields. A phase difference measurement device (10) comprises: an electromagnetic irradiation unit (2) that repeatedly irradiates a quantum sensor element (1) with electromagnetic waves for manipulating an electron spin state of the quantum sensor element (1) which changes via interaction with a second physical field or a first physical field generated by an AC signal; and a phase difference measurement unit (3) that acquires a plurality of electron spin states after interaction with the second physical field or the first physical field, and measures the phase difference between a plurality of physical fields on the basis of the acquired plurality of electron spin states.
According to the present invention, provided is an antenna mechanism 3 that adjusts the impedance of an antenna body through which a high-frequency current flows to generate plasma by means of a simple configuration, and generates plasma P, and comprises: the antenna body 31 through which high-frequency current flows; and one or a plurality of adjustment circuits 32 provided adjacent to the antenna body 31. The adjustment circuit 32 has a metal conductor 321 forming a closed circuit and a capacitor 322 forming the closed circuit.
This plasma treatment device generates plasma with suppressed electrostatic coupling components inside a vacuum container. A plasma treatment device (1) comprises a vacuum container (2), an antenna (7) generating a high-frequency magnetic field, and a magnetic field introduction window (3) introducing the high-frequency magnetic field into the vacuum container (2). The magnetic field introduction window (3) includes a metal plate (4) on which a plurality of slits (41) are formed, and a dielectric plate (5) overlaid on the metal plate (4) to cover the plurality of slits (41) and on which a metal layer (6) is formed, the metal layer (6) being maintained at a predetermined potential.
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
The present invention reduces generation of a capacitive coupled plasma while using a linear antenna part. A linear antenna part (3) installed inside a vacuum container is provided with an antenna conductor (31) through which high-frequency current flows; and a Faraday shield (33) provided around at least a part of the antenna conductor (31).
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
The present invention decreases the likelihood that particles moving within a vacuum vessel will adhere to a dielectric cover. A magnetic field introduction window (3) provided to a wall surface of a vacuum vessel (2) comprises: a metal plate (31) in which a plurality of slits (311) are formed; a dielectric cover (32) that covers the plurality of slits (311); a gasket (33) provided between the dielectric cover (32) and the metal plate (31); and a deposition preventing plate (34) provided to the metal plate (31) so as to at least partially cover the plurality of slits (311).
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
The present invention facilitates the handling of dielectric plates and reduces the probability of the dielectric plates being damaged by thermal expansion of the dielectric plates. A plasma processing device (1) is provided with a vacuum container (2), an antenna (6), and a magnetic field induction window (3). The magnetic field induction window (3) comprises: a metal plate (4) which has formed therein a plurality of slits (41) and includes bridge sections (42); and a plurality of rectangular dielectric plates (5) that cover the plurality of slits (41). The plurality of dielectric plates are disposed so that edges of neighboring dielectric plates (5), adjacent to face one another, are located over the bridge sections (42).
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
According to the present invention, plasma processing is uniformly performed on an object to be processed. A plasma processing apparatus (1) is provided with: a vacuum container (2) within which to accommodate an object (W1) to be processed; an antenna (6) provided outside the vacuum container (2) to generate a high frequency magnetic field; a magnetic field introduction window (3) provided in a wall surface (22) of the vacuum container (2) to introduce the high frequency magnetic field into the vacuum container (2); and a mechanism unit (7) for moving the antenna (6) in parallel to the magnetic field introduction window (3) with the antenna (6) generating the high frequency magnetic field.
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
In the present invention, a gas is fed over the entire surface of a target. In the present invention, a vacuum container (2) of a sputtering device (1) is provided with at least one target holder (32) for holding a target (30). The target holder is provided with: a gas introduction part (51) for introducing a gas (10); and a pair of gas release ports (54) for releasing the gas into the vacuum container, the gas release ports (54) being provided at opposing positions in at least a part of the surroundings of the target.
Provided is a diamond magneto-optical sensor including: a diamond that has a color center having an electron spin; and a reflective surface that reflects excitation light propagating through an optical system and entering the inside of the diamond. The reflective surface reflects synchrotron radiation emitted from the color center excited by the excitation light and focuses the synchrotron radiation in the direction toward the optical system.
This diamond magneto-optical sensor includes: a diamond which includes a color center having electron spin, and to which excitation light is projected; and a projection unit that projects, to the diamond, the excitation light for the color center and electromagnetic waves for magnetic resonance. The projection unit receives modulated light which was amplitude modulated. The modulation frequency of the modulated light is within the microwave frequency band.
A diamond magneto-optical sensor (100) according to the present invention includes: a diamond (102) having a color center that has an electron spin; a transmission circuit (106) that transmits electromagnetic waves; and an irradiation part that irradiates the diamond (102) with electromagnetic waves transmitted by the transmission circuit (106). The transmission circuit (106) includes an impedance converter (108) for decreasing or increasing, when viewed from the irradiation part, impedance of an electromagnetic wave source (110) that outputs electromagnetic waves. The irradiation part includes a resonator (104).
44 gas, a nitrogen gas, an oxygen gas, and a hydrogen gas are supplied as process gasses; and, in the supplied process gasses, the percentage of the nitrogen gas flow rate with respect to the total flow rate of the nitrogen gas and oxygen gas is 93% or greater.
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
H01L 21/318 - Inorganic layers composed of nitrides
H01L 21/336 - Field-effect transistors with an insulated gate
The present invention comprises: a high-frequency power supply; an antenna group having a plurality of antennas connected to the high-frequency power supply; a plurality of reactance variable elements connected to the feeding sides and the grounding sides of the plurality of antennas; a current detection mechanism which detects the current flowing through the feeding sides and the ground sides of the plurality of antennas; a uniformity calculation unit which calculates the uniformity index value of the current flowing through the plurality of antennas, on the basis of the current value detected by the current detection mechanism; and a reactance changing unit which sequentially changes the reactance of the plurality of reactance variable elements such that the uniformity index value calculated by the uniformity calculation unit approaches a predetermined set value.
This diamond magnetic sensor unit comprises: a sensor unit including diamond having a color center with electron spin; an excitation light irradiation unit for irradiating the diamond with excitation light; and a detection unit for detecting emitted light from the color center of the diamond. The detection unit detects emitted light generated as a result of the diamond being irradiated with excitation light by the excitation light irradiation unit without being irradiated with electromagnetic waves. The detection unit is at least 10 mm spaced apart from the sensor unit and may include a conductive member for transmitting electromagnetic waves.
A diamond sensor unit comprising: a sensor part containing a diamond having a color center in which electron spin is present; an irradiation part that irradiates the diamond with excitation light; a detection part that detects radiated light from the color center of the diamond; and an optical waveguide through which the excitation light and the radiated light propagate.
This diamond sensor unit includes: a diamond having a color center having electron spin; an exciting light emitting unit for emitting exciting light onto the diamond; a first patch antenna for receiving electromagnetic waves; an electromagnetic wave emitting unit for emitting electromagnetic waves received by the first patch antenna onto the diamond; a detecting unit for detecting radiated light radiated from the color center of the diamond, after the exciting light and the electromagnetic waves have been emitted onto the diamond; and an optical waveguide for transmitting the exciting light and the radiated light.
G01N 22/00 - Investigating or analysing materials by the use of microwaves or radio waves, i.e. electromagnetic waves with a wavelength of one millimetre or more
An uninterruptible power supply device provided between a commercial power system and an essential load and supplying AC power to the essential load includes: a power supply part that has an energy storage device and is connected to a power line for supplying power from the commercial power system to the essential load; an open switch for opening/closing the power supply line, the open switch being provided on the power line on the commercial-power-system side of the power supply part; a system abnormality detection part for detecting a system abnormality occurring on the commercial-power-system side of the open switch; and a control part that, when the detected system abnormality is equal to or greater than the tolerance of the essential load or the power supply part against system abnormalities, opens the open switch and supplies AC power from the power supply part to the essential load.
H02J 9/06 - Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source with automatic change-over
H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
H02H 7/18 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for batteriesEmergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for accumulators
H02J 7/02 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries for charging batteries from AC mains by converters
83.
Power supply apparatus and control method of power supply apparatus
A power supply apparatus (1) is provided with an energy storage device (10), a converter (20) for converting DC output to AC output, and a control unit (60). The control unit (60) controls the converter (20) such that, when an output current value exceeds a first limit value, the output current value becomes a predetermined value larger than the first limit value by lowering an output voltage value to less than a normal state value.
H02M 7/538 - Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a push-pull configuration
H02M 7/5387 - Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
This temperature increase testing method for reactors comprises a step for supplying, to a reactor, a test current having a test frequency and a test current value which apply a target copper loss (Wcut) that is based on copper loss (Wcu21) when a fundamental wave current is supplied and copper loss (Wcu22) when a harmonic wave current is supplied, and a target iron loss (Wfet) that is based on iron loss (Wfe21) when a fundamental wave current is supplied and iron loss (Wfe22) when a harmonic wave current is supplied.
G01R 27/26 - Measuring inductance or capacitanceMeasuring quality factor, e.g. by using the resonance methodMeasuring loss factorMeasuring dielectric constants
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
H01L 21/318 - Inorganic layers composed of nitrides
Provided is a method for forming an oxide semiconductor film on a substrate by sputtering a target using a plasma, wherein the crystallinity of the oxide semiconductor film is controlled by altering the distance between the substrate and the target.
H01L 21/363 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
H01L 21/336 - Field-effect transistors with an insulated gate
In order to achieve further uniformity of a plasma density distribution by enabling fine adjustment of the plasma density distribution along the longitudinal direction of an antenna, this plasma treatment device comprises: a vacuum container (1); an antenna (2) which is provided outside the vacuum container (1) and through which high-frequency current (IR) flows; and a high-frequency window (9) that closes an opening (10x) formed at a position of the vacuum container (1) facing the antenna (2). The antenna (2) has an outgoing conductor (21) and a returning conductor (22) which are opposite to each other in terms of the direction in which the high-frequency current (IR) flow therethrough. The plasma treatment device further comprises a distance adjustment mechanism (10) for partially adjusting the relative distance between the outgoing conductor (21) and the returning conductor (22).
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
88.
DETERIORATION DETECTION SYSTEM, DETERIORATION DETECTION DEVICE, AND DETERIORATION DETECTION METHOD
In the present invention, a sensor (2) is connected to a film capacitor (1), the sensor (2) detecting the occurrence of vibration or noise associated with a self-healing phenomenon that occurs in the film capacitor (1), and outputting the result of detection as a pulse signal. A measurement unit (32) measures the number of times the pulse signal is outputted from the sensor (2). A control unit (34) calculates a reduction value for the electrostatic capacitance of the film capacitor (1) in accordance with the number of times the pulse signal was outputted as measured by the measurement unit (32), generates information relating to the reduction value for the electrostatic capacitance, and outputs the generated information. A display unit (31) displays the information outputted from the control unit (34).
G01M 99/00 - Subject matter not provided for in other groups of this subclass
H01G 13/00 - Apparatus specially adapted for manufacturing capacitorsProcesses specially adapted for manufacturing capacitors not provided for in groups
89.
DATA EXTRACTION DEVICE FOR STORAGE BATTERY AND DATA EXTRACTION METHOD FOR STORAGE BATTERY
1355 (third period) continuously passed in which variation was less than or equal to a threshold value γ (third threshold value). If data extraction parameters including each of these determinations are satisfied, the data extraction unit 23 extracts data regarding this transient reponse time from a storage unit 22.
The present invention provides, at a low cost, a thin-film transistor in which an oxide semiconductor is used as the channel layer, wherein a high reliability is obtained. A bottom-gate-type thin-film transistor in which a gate electrode, a gate insulation layer, a channel layer made of an oxide semiconductor, and a channel protection layer for protecting the surface of the channel layer are stacked in the sequence listed on a substrate, the channel protection layer being constituted from a fluorine-containing silicon oxide film, and the fluorine-containing silicon oxide film being such that the O/Si ratio, which is the ratio of the number of O atoms (at%) relative to the number of Si atoms (at%), is 1.94 or above.
A gas insulated transformer is provided which can estimate primary voltage with high precision. This transformer is provided with a core, a secondary winding (12) wound around the core, a primary winding (11) wound outside the outer periphery of the secondary winding and coaxially with the secondary winding, a high voltage shield (13) which covers the outer periphery of the primary winding, a low voltage shield (14) which is opposite to the high voltage shield, a ground terminal (23), and a capacitor (21) which is connected at one end to the low voltage shield and at the other end to the ground terminal.
The present invention, by using a slit member in which slits are formed in a configuration in which an antenna is arranged on the outside of a vacuum container, shortens the distance from the antenna to the inside of the vacuum container, and thereby makes it possible to efficiently supply, to the inside of the vacuum container, a high-frequency magnetic field generated from the antenna, and also prevent conduction within the slits of the slit member. A plasma source 200 for making a high-frequency current IR flow through an antenna 2 provided on the outside of a vacuum container 1 and generating plasma P in the vacuum container 1 is equipped with: a slit member 7 which blocks an opening formed at a position facing the antenna 2 of the vacuum container 1 and in which a plurality of slits 7x are formed along the longitudinal direction of the antenna 2; and a dielectric plate 8 for blocking the slits 7x from the outer side of the vacuum container 1. A recess 72 is formed in the slit member 7 by inwardly recessing an area that is on an outward surface 71 facing the outer side and that is sandwiched between adjacent slits 7x.
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
93.
FILM FOR FILM CAPACITORS, METALLIZED FILM FOR FILM CAPACITORS, AND FILM CAPACITOR
This film for film capacitors comprises a base material film that is formed of a polypropylene and an oxidized layer that is provided on at least one of the front surface and the back surface of the base material film. The oxygen atom concentration of the oxidized layer as determined with use of a secondary ion mass spectrometry method is 1021atoms/cm3 or more.
A substrate holding device includes: a frame body on which a substrate transferred by a transfer device is mounted, and a substrate delivery mechanism for delivering, to the frame body, the substrate transferred to the above of the frame body by the transfer device. The substrate delivery mechanism includes: a support pin arranged below the frame body, a support pin advancing/retreating mechanism for advancing and retreating the support pin between a support pin lifting/lowering position set on a lower side inside the frame body and a support pin retracting position set outside the frame body, and a support pin lifting/lowering mechanism by which the support pin arranged in the support pin lifting/lowering position by the support pin advancing/retreating mechanism is lowered after being lifted so as to pass through the interior of the frame body and support the substrate.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
B23P 11/00 - Connecting or disconnecting metal parts or objects by metal-working techniques, not otherwise provided for
B25B 11/00 - Work holders or positioners not covered by groups , e.g. magnetic work holders, vacuum work holders
B65G 49/06 - Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
According to the present invention, provided is an antenna mechanism 3 that adjusts the impedance of an antenna body through which a high-frequency current flows to generate plasma by means of a simple configuration, and generates plasma P, and comprises: the antenna body 31 through which high-frequency current flows; and one or a plurality of adjustment circuits 32 provided adjacent to the antenna body 31. The adjustment circuit 32 has a metal conductor 321 forming a closed circuit and a capacitor 322 forming the closed circuit.
In the present invention, a target can be efficiently sputtered while improving film formation rate and treatment efficiency by placing an antenna outside a vacuum vessel and reducing the distance from the target to a workpiece. This sputtering device 100 is for forming a film on a workpiece W by means of sputtering of a target T with plasma P, said device being provided with a vacuum vessel 1 to be evacuated, an antenna 5 disposed outside the vacuum vessel 1, a dielectric plate 6 disposed on an outer wall 1a of the vacuum vessel 1 at a position facing the antenna 5, and a target holding part 3 for holding the target T inside the vacuum vessel 1, and being configured such that the target T is disposed on one or both positions sandwiching the dielectric plate 6, with a sputter surface Ta thereof obliquely extending toward the opposite side from the antenna 5 with respect to the dielectric plate 6.
The present invention realizes a plasma treatment device with which a film deposition rate and film thickness of a film formed on a substrate can be made uniform. A plasma treatment device includes: a plurality of antennas for plasma generation arranged in a vacuum chamber; and a plurality of groups of multiple gas injection ports arranged in the vicinity of lines that are substantially perpendicular to longitudinal directions of the plurality of antennas and extend in a direction in which the plurality of antennas are arranged with respect to each other. The plasma treatment device further includes a gas flow-rate control unit for controlling flow rates of gas injected from each of the groups of the multiple gas injection ports.
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
C23C 16/52 - Controlling or regulating the coating process
Provided is an uninterruptable power supply device. An uninterruptable power supply device 100, which is provided between a commercial power system 10 and an essential load 30 and which provides AC power to the essential load 30, wherein the uninterruptable power supply device 100 is provided with: a power supply unit 2, which has a power converter 22 and a storage battery 21 and which is connected to a power line L1; an open switch 3 for opening the power supply line L1; a system abnormality detection unit 5 for detecting a system abnormality, which is at least one of voltage rise, phase fluctuation, voltage imbalance, harmonic abnormality, and flicker, in addition to at least one of frequency fluctuation and voltage drop including instantaneous voltage drop; and a control unit 6 which, opens the open switch 3 and supplies AC power to the essential load 30.
H02J 9/06 - Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source with automatic change-over
H02J 3/01 - Arrangements for reducing harmonics or ripples
H02J 3/00 - Circuit arrangements for ac mains or ac distribution networks
H02J 3/24 - Arrangements for preventing or reducing oscillations of power in networks
H02J 3/32 - Arrangements for balancing the load in a network by storage of energy using batteries with converting means
A power supply system includes a distributed power supply, an opening/closing switch, an impedance element, a system abnormality detection part, and a switch control part. The distributed power supply is connected to a power line for supplying power to an important load from a commercial power system. The opening/closing switch is provided on a commercial power system side of the distributed power supply. The impedance element is connected in parallel to the opening/closing switch. The system abnormality detection part detects an abnormality of the commercial power system. The switch control part opens the opening/closing switch and connects the distributed power supply and the commercial power system via the impedance element when an abnormality of the commercial rower system is detected. When the distributed power supply and the commercial power system are connected via the impedance element, the distributed power supply continues an operation including a reverse power flow.
The apparatus includes: a vacuum container; a substrate-holding part inside the vacuum container; a target-holding part inside the vacuum container; and a plurality of antennas having a flow channel through which a cooling liquid flows. The antennas include: at least two tubular conductor elements; a tubular insulating element that is arranged between mutually adjacent conductor elements and insulates the conductor elements; and a capacitive element that is connected electrically in series to the mutually adjacent conductor elements. The capacitive element includes: a first electrode which is connected electrically to one of the mutually adjacent conductor elements; a second electrode which is connected electrically to the other of the mutually adjacent conductor elements and is disposed facing the first electrode; and a dielectric substance that fills the space between the first electrode and the second electrode. The dielectric substance is a cooling liquid.
