A space power module (SPM) can include a plurality of solar cells, a plurality of interconnect elements, and a plurality of planar pieces of cover glass forming a mosaic sheet of cover glass overlaying light receiving surfaces of the plurality of solar cells. Each interconnect element can connect two adjacent solar cells of the plurality of solar cells and can be arranged in-plane relative to the two adjacent cells. The plurality of planar pieces of cover glass can cover at least portions of the plurality of interconnect elements.
Systems and methods are presented including solar cells or solar sheets having textured coversheets that provide increased light collection efficiency. Some embodiments include a textured solar coversheet configured for installation on a surface of a space-based vehicle or on a surface of a component of a space-based vehicle. The textured solar sheet includes a plurality of solar cells, a polymer coversheet to which the plurality of solar cells are attached, and an ultraviolet rejection film disposed over the polymer coversheet.
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
H01L 31/0445 - PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
3.
SOLAR SHEETS WITH IMPROVED LIGHT COUPLING AND METHODS FOR THEIR MANUFACTURE AND USE
Systems and methods are presented including solar cells or solar sheets having textured coversheets that provide increased light collection efficiency. Some embodiments include a textured solar sheet configured for installation on a surface of a UAV or on a surface of a component of a UAV. The textured solar sheet includes a plurality of solar cells and a polymer layer to which the plurality of solar cells are attached. Some embodiments include a kit for supplying solar power in a battery-powered or fuel cell powered unmanned aerial vehicle (UAV) by incorporating flexible, textured solar cells into a component of a UAV, affixing flexible, textured solar cells to a surface of a UAV, or affixing flexible, textured solar cells to a surface of a component of a UAV. The kit also includes a power conditioning system configured to operate the solar cells within a desired power range and configured to provide power having a voltage compatible with an electrical system of the UAV.
B64U 50/31 - Supply or distribution of electrical power generated by photovoltaics
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
4.
Strain balanced direct bandgap aluminum indium phosphide quantum wells for light emitting diodes
H10H 20/815 - Bodies having stress relaxation structures, e.g. buffer layers
H10H 20/811 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H10H 20/824 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.
Methods and systems for etching a substrate using photoenhanced wet etching techniques are described. At least one light emitting diode source is used to create a high intensity of ultraviolet light at the surface of the substrate or at one or more layers formed on the substrate. Etching rates in GaN substrates and GaN layers are improved by an order of magnitude over conventional systems. Systems and methods for forming a device structure free of a substrate are described. The device structure is grown or applied over a release layer on a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device structure from the substrate.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
7.
Systems and methods for perforation and ohmic contact formation for GaN epitaxial lift-off using an etch stop layer
Methods and systems for forming a device structure free of a substrate are described. Exemplary embodiments include a device structure comprising of device layers, a release layer, an etch stop layer, and a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device layers from the substrate. The device structure can include a contact layer, an etch stop layer, or both in some embodiments.
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
8.
DEEP PHOTOENHANCED WET MATERIAL ETCHING USING HIGH-POWER ULTRAVIOLET LIGHT EMITTING DIODES
Methods and systems for etching a substrate using photoenhanced wet etching techniques are described. At least one light emitting diode source is used to create a high intensity of ultraviolet light at the surface of the substrate or at one or more layers formed on the substrate. Etching rates in GaN substrates and GaN layers are improved by an order of magnitude over conventional systems. Systems and methods for forming a device structure free of a substrate are described. The device structure is grown or applied over a release layer on a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device structure from the substrate.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Methods and systems for forming a device structure free of a substrate are described. Exemplary embodiments include a device structure comprising of device layers, a release layer, an etch stop layer, and a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device layers from the substrate. The device structure can include a contact layer, an etch stop layer, or both in some embodiments.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Systems and methods taught herein provide thin film semiconductor devices such as thin film photovoltaic devices having via holes that enable electrical connection with a bottom surface of a topside contact of the thin film semiconductor device via the back side of the device (e.g., during mounting of the device). In some embodiments, the via holes are electrically insulated.
H01L 31/0463 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
11.
BACK-CONTACT THIN FILM SEMICONDUCTOR DEVICE STRUCTURES AND METHODS FOR THEIR PRODUCTION
Systems and methods taught herein provide thin film semiconductor devices such as thin film photovoltaic devices having via holes that enable electrical connection with a bottom surface of a topside contact of the thin film semiconductor device via the back side of the device (e.g., during mounting of the device). In some embodiments, the via holes are electrically insulated.
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
12.
INTEGRATION OF HIGH-EFFICIENCY, LIGHTWEIGHT SOLAR SHEETS ONTO UNMANNED AERIAL VEHICLE FOR INCREASED ENDURANCE
Some embodiments include a kit for supplying solar power in a battery-powered or fuel cell powered unmanned aerial vehicle (UAV) by incorporating flexible solar cells into a component of a UAV, affixing flexible solar cells to a surface of a UAV, or affixing flexible solar cells to a surface of a component of a UAV. The kit also includes a power conditioning system configured to operate the solar cells within a desired power range and configured to provide power having a voltage compatible with an electrical system of the UAV. Another embodiments include a solar sheet configured for installation on a surface of a UAV or on a surface of a component of a UAV. The solar sheet includes a plurality of solar cells and a polymer layer to which the plurality of solar cells are attached.
Some embodiments include a high efficiency, lightweight solar sheet. Some embodiments include a solar sheet configured for installation on a surface of a UAV or on a surface of a component of a UAV. The solar sheet includes a plurality of solar cells and a polymer layer to which the plurality of solar cells are attached. Some embodiments include a kit for supplying solar power in a battery-powered or fuel cell powered unmanned aerial vehicle (UAV) by incorporating flexible solar cells into a component of a UAV, affixing flexible solar cells to a surface of a UAV, or affixing flexible solar cells to a surface of a component of a UAV. The kit also includes a power conditioning system configured to operate the solar cells within a desired power range and configured to provide power having a voltage compatible with an electrical system of the UAV.
Some embodiments include a kit for supplying solar power in a battery-powered or fuel cell powered unmanned aerial vehicle (UAV) by incorporating flexible solar cells into a component of a UAV, affixing flexible solar cells to a surface of a UAV, or affixing flexible solar cells to a surface of a component of a UAV. The kit also includes a power conditioning system configured to operate the solar cells within a desired power range and configured to provide power having a voltage compatible with an electrical system of the UAV. Another embodiments include a solar sheet configured for installation on a surface of a UAV or on a surface of a component of a UAV. The solar sheet includes a plurality of solar cells and a polymer layer to which the plurality of solar cells are attached.
The method of the invention includes the sequential steps of providing a plurality of solar cells, interconnecting the solar cells using one or more interconnect tabs, attaching the interconnect tabs to a top side of the solar cell to interconnect the plurality of solar cells by coupling an exposed top surface of a first solar cell to a top surface of an adjacent second solar cell, attaching one or more bypass diodes to a top side of the solar cell, then next applying an adhesive to a first film layer, placing the plurality of solar cells onto the first film layer, then next applying an adhesive to a second film layer, placing the plurality of solar cells and first film layer onto the second film layer to form a sheet assembly, and then forming the solar sheet from the sheet assembly.
The method of the invention includes the sequential steps of providing a plurality of solar cells, interconnecting the solar cells using one or more interconnect tabs, attaching the interconnect tabs to a top side of the solar cell to interconnect the plurality of solar cells by coupling an exposed top surface of a first solar cell to a top surface of an adjacent second solar cell, attaching one or more bypass diodes to a top side of the solar cell, then next applying an adhesive to a first film layer, placing the plurality of solar cells onto the first film layer, then next applying an adhesive to a second film layer, placing the plurality of solar cells and first film layer onto the second film layer to form a sheet assembly, and then forming the solar sheet from the sheet assembly.
Some embodiments include a kit for increasing endurance of a battery-powered unmanned aerial vehicle (UAV) by incorporating flexible solar cells or applying flexible solar cells on a surface of a UAV or on a surface of a component of a UAV. The kit further include a power conditioning system configured to operate the solar cells within a desired power range and configured to provide power having a voltage compatible with an electrical system of the UAV.
Some embodiments include a kit for increasing endurance of a battery-powered unmanned aerial vehicle (UAV) by incorporating flexible solar cells or applying flexible solar cells on a surface of a UAV or on a surface of a component of a UAV. The kit further include a power conditioning system configured to operate the solar cells within a desired power range and configured to provide power having a voltage compatible with an electrical system of the UAV.
Methods of producing single-junction or multi-junction InP-based solar cells grown latticed-matched on a InP substrate or grown on metamorphic layers on a GaAs substrate, with the substrate subsequently removed in a nondestructive manner via the epitaxial lift-off (ELO) technique, and devices produced using the methods are described herein.
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/0687 - Multiple junction or tandem solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
20.
LIGHT EMITTING DIODE FABRICATED BY EPITAXIAL LIFT-OFF
A method of fabricating a light emitting diode using an epitaxial lift-off process includes forming a sacrificial layer on a substrate, forming a light emitting diode structure on the sacrificial layer with an epitaxial material, forming a light reflecting layer on the light emitting diode structure, and removing the sacrificial layer using an etching process to separate the substrate from the light emitting diode structure.
An assembly technique for assembling solar cell arrays is provided. During the fabrication of a solar cell, openings through the semiconductor layer are etched through to a top surface of the backmetal layer. The solar cells include an exposed top surface of the backmetal layer. A plurality of solar cells are assembled into a solar cell array where adjacent cells are interconnected in an electrically serial or parallel fashion solely from the top surface of the solar cells.
An assembly technique for assembling solar cell arrays is provided. During the fabrication of a solar cell, openings through the semiconductor layer are etched through to a top surface of the backmetal layer. The solar cells include an exposed top surface of the backmetal layer. A plurality of solar cells are assembled into a solar cell array where adjacent cells are interconnected in an electrically serial or parallel fashion solely from the top surface of the solar cells.
Methods and systems for fabricating an integrated BiFET using two separate growth procedures are disclosed. Performance of the method fabricates the FET portion of the BiFET in a first fabrication environment. Performance of the method fabricates the HBT portion of the BiFET in a second fabrication environment. By separating the fabrication of the FET portion and the HBT portion in two or more separate reactors, the optimum device performance can be achieved for both devices.
The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.
An assembly technique for assembling solar cell arrays is provided. During the fabrication of a solar cell, openings through the semiconductor layer are etched through to a top surface of the backmetal layer. The solar cells include an exposed top surface of the backmetal layer. A plurality of solar cells are assembled into a solar cell array where adjacent cells are interconnected in an electrically serial or parallel fashion solely from the top surface of the solar cells.
An assembly technique for assembling solar cell arrays is provided. During the fabrication of a solar cell, openings through the semiconductor layer are etched through to a top surface of the backmetal layer. The solar cells include an exposed top surface of the backmetal layer. A plurality of solar cells are assembled into a solar cell array where adjacent cells are interconnected in an electrically serial or parallel fashion solely from the top surface of the solar cells.
The present application utilizes an oxidation process to fabricating a Group III- V compound semiconductor solar cell device. By the oxidation process, a window layer disposed on a cell unit is oxidized to enhance the efficiency of the solar cell device. The oxidized window has an increased band gap to minimize the surface recombination of electrons and holes. The oxidized window also improves transparency at the wavelengths that were absorbed in the conventional window layer.
The present application utilizes an oxidation process to fabricating a Group III-V compound semiconductor solar cell device. By the oxidation process, a window layer disposed on a cell unit is oxidized to enhance the efficiency of the solar cell device. The oxidized window has an increased band gap to minimize the surface recombination of electrons and holes. The oxidized window also improves transparency at the wavelengths that were absorbed in the conventional window layer.
The present application utilizes an oxidation process to fabricating a Group III-V compound semiconductor solar cell device. By the oxidation process, a window layer disposed on a cell unit is oxidized to enhance the efficiency of the solar cell device. The oxidized window has an increased band gap to minimize the surface recombination of electrons and holes. The oxidized window also improves transparency at the wavelengths that were absorbed in the conventional window layer.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0687 - Multiple junction or tandem solar cells
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
30.
SOLAR CELL WITH A BACKSIDE VIA TO CONTACT THE EMITTER LAYER
A solar cell structure is provided for reducing shadow losses without increasing series resistance in the solar cell device. The solar cell device may form an electrical contact to a solar cell emitter layer from the backside of the solar cell device. With this structure, the emitter contact shadow losses may be reduced significantly while simultaneously decreasing device series resistance.
H01L 31/0376 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
31.
Solar cell with a backside via to contact the emitter layer
A solar cell structure is provided for reducing shadow losses without increasing series resistance in the solar cell device. The solar cell device may form an electrical contact to a solar cell emitter layer from the backside of the solar cell device. With this structure, the emitter contact shadow losses may be reduced significantly while simultaneously decreasing device series resistance.
H01L 31/0687 - Multiple junction or tandem solar cells
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/078 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups
32.
Methods for fabricating thin film III-V compound solar cell
The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.
The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film HI-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.
The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.
Methods and systems for fabricating an integrated BiFET using two separate growth procedures are disclosed. Performance of the method fabricates the FET portion of the BIFET in a first fabrication environment. Performance of the method fabricates the HBT portion of the BiFET in a second fabrication environment. By separating the fabrication of the FET portion and the HBT portion in two or more separate reactors, the optimum device performance can be achieved for both devices.
Methods and systems for fabricating an integrated BiFET using two separate growth procedures are disclosed. Performance of the method fabricates the FET portion of the BiFET in a first fabrication environment. Performance of the method fabricates the HBT portion of the BiFET in a second fabrication environment. By separating the fabrication of the FET portion and the HBT portion in two or more separate reactors, the optimum device performance can be achieved for both devices.
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 21/8252 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
37.
High on-state breakdown heterojunction bipolar transistor
CE. The improvement of the on-state breakdown voltage for the HBT improves the output power characteristics of the HBT and the ability of the HBT to withstand large impedance mismatch (large VSWR). The improvement in the on-state breakdown voltage is related to the suppression of high electric fields adjacent a junction of a collector layer and a sub-collector layer forming a collector region of the HBT.
H01L 27/082 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
patents
