An electronic component includes an element body, a plurality of external electrode each including a conductive resin layer, a plurality of internal electrodes each electrically connected to a corresponding external electrode of the plurality of external electrodes, and an electrical insulation film disposed on the element body. The element body includes a pair of end surfaces, and a first side surface and a second side surface adjacent to each other and to the pair of end surfaces. The element body includes a first region positioned away from the first side surface, and a second region including the first side surface and having a dielectric constant smaller than a dielectric constant of the first region. The plurality of internal electrodes are disposed in the first region. The electrical insulation film includes a film portion positioned on a region, of the second side surface, between the conductive resin layers.
An electro-optical component includes: a single crystal substrate; an optical waveguide made of a dielectric thin film formed in contact with a main surface of the single crystal substrate; and an electrode configured to apply voltage to the optical waveguide, wherein the dielectric thin film is made of a lithium niobate film that is an epitaxial film with a c-axis orientation, and a c-axis length of the lithium niobate film is 13.88 Å or more.
G02F 1/035 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels or Kerr effect in an optical waveguide structure
G02F 1/21 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour by interference
G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
3.
SUBSTRATE WITH DIELECTRIC THIN FILM, OPTICAL WAVEGUIDE COMPONENT, AND OPTICAL MODULATION COMPONENT
A substrate with a dielectric thin film includes: a single crystal substrate; and a dielectric thin film formed in contact with a main surface of the single crystal substrate, wherein the dielectric thin film has a thickness of 0.5 μm to 2 μm and is made of a lithium niobate film that is an epitaxial film with a c-axis orientation, the dielectric thin film has a twin crystal structure of LiNbO3 of a first crystal and a second crystal corresponding to a crystal in which the first crystal is rotated 180° around the c-axis, the first crystal and the second crystal in an upper region of the dielectric thin film, excluding a lower region from the single crystal substrate to half of a thickness direction in the dielectric film, have maximum domain widths of 80 nm to 300 nm.
G02F 1/035 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels or Kerr effect in an optical waveguide structure
An optical sensor includes a wavelength filter configured to transmit light in a specific wavelength range and a magnetic element including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer. The light passing through the wavelength filter is applied to the magnetic element and the light applied to the magnetic element is detected.
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
An electro-optical component includes: a single crystal substrate; an optical waveguide comprising a dielectric thin film formed in contact with the main surface of the single crystal substrate; and an electrode configured to apply voltage to the optical waveguide, wherein the dielectric thin film is made of a lithium niobate film that is an epitaxial film with a c-axis orientation, and an X-ray intensity ratio (LiNb3O8(60−2)/LiNbO3(006)) of LiNb3O8 to LiNbO3 is 0.02 or more.
G02F 1/035 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels or Kerr effect in an optical waveguide structure
Electrodes (20, 30) are provided with current collectors (22, 32) and active material layers (24, 34) that are in contact with one surface of each of the current collectors (22, 32). The active material layers (24, 34) have main parts (25, 35) and sub parts (26, 36) when viewed from a lamination direction. The sub parts (26, 36) are separated from the main parts (25, 35), and are at outer peripheral ends of the active material layers (24, 34). The area of the main parts (25, 35) is wider than the area of the sub parts (26, 36).
H01M 4/131 - Electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
H01M 4/485 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
This domain wall motion element includes a first magnetoresistance effect element and a first transistor. A first domain wall displacement layer of the first magnetoresistance effect element is electrically connected to a first active region of the first transistor. The length of the first magnetoresistance effect element in a first direction is longer than the length thereof in a second direction. The length of a first gate in the first direction is longer than the length thereof in the second direction. The length of the first magnetoresistance effect element in the first direction is longer than the length of the first gate in the first direction. A first gate length direction connecting the first active region and a second active region intersects with the first direction.
A magnetic field detection apparatus includes a substrate including a flat surface, and multiple projections including a first projection and a second projection. Each of the multiple projections is provided on the flat surface and includes a first inclined surface and a second inclined surface, the first inclined surface being inclined with respect to the flat surface, the second inclined surface being inclined with respect to both the flat surface and the first inclined surface. A first magnetoresistive effect film is provided on the first inclined surface. A second magnetoresistive effect film is provided on the second inclined surface. A first wiring line couples the first magnetoresistive effect film provided on the first inclined surface of the first projection of the multiple projections and the first magnetoresistive effect film provided on the first inclined surface of the second projection of the multiple projections to each other.
A magnetic sensor includes a first path and a second path, a plurality of structures, and a plurality of first electrodes and a plurality of second electrodes. The first path includes at least one first array. The second path includes at least one second array. The at least one first array and the at least one second array are disposed so that they are arranged in a first direction. The at least one first array and the at least one second array each include an odd number of structures disposed so that they are arranged in a second direction.
In the laminated coil component, in the third direction, the pair of the connecting portions are interposed between the pair of the end portions of the coil conductor and the pair of the terminal electrode. Since each of the connecting portions has the elongated portion extending from the overlapping portion overlapping the end portion of the coil conductor, the enlargement of the contact area with the terminal electrode is achieved, and the high connection reliability between the coil conductor and the terminal electrode is achieved.
Disclosed herein is a coil component that includes a plurality of conductor layers embedded in a magnetic element The plurality of conductor layers include a first body. conductor layer positioned at one end portion in a stacking direction, a second conductor layer positioned at another end portion in the stacking direction, and one or more third conductor layers positioned between the first and second conductor layers. The first conductor layer includes a first coil pattern and first and second connection patterns exposed from the mounting surface. The second and third conductor layers include second and third coil patterns, respectively, and third and fourth connection patterns, respectively, exposed from the mounting surface. The magnetic element body is disposed in an end area that overlaps the first connection pattern in a plan view as viewed in the stacking direction.
A core device includes: a core having a mounting surface; a first conductor including a first body portion extending along the mounting surface inside the core; and a second conductor including a second body portion that extends along the mounting surface inside the core and faces the first body portion. The first body portion has a first side surface having a first thickness in a direction perpendicular to the mounting surface and a first main surface having a first width in a direction parallel to the mounting surface. The second body portion has a second side surface having a second thickness in the direction perpendicular to the mounting surface and a second main surface having a second width in the direction parallel to the mounting surface. The second width is narrower than the first width when the first body portion and the second body portion face each other.
A magnetic body including, in the given order: a substrate; a magnet film including a hard-magnetic body that contains a rare earth element R such as Sm, Nd, or Pr and a transition metal T such as Co or Fe; and a soft-magnetic film including a soft-magnetic body that contains the rare earth element R and the transition metal T.
H01F 10/16 - Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
H01F 1/055 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5
H01F 1/147 - Alloys characterised by their composition
H01F 10/26 - Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
14.
MAGNETIC MATERIAL FILM, MEMBER WITH MAGNETIC MATERIAL FILM, ACTUATOR, AND SENSOR
[Problem] To provide: a magnetic material film which has a thickness of several tens to several hundreds of microns and achieves high coercive force; a member with a magnetic material film, which has the magnetic material film; an actuator; and a sensor. [Solution] The present invention provides a magnetic material film which contains a rare earth element that essentially includes Sm or Nd, and a transition metal element that includes Co or Fe. The magnetic material film has a main magnetic material layer that has a plurality of crystal grains. The crystal grains include columnar grains, in each of which a first length (Lc) along the thickness direction of the main magnetic material layer is longer than a second length (La) along a direction that is perpendicular to the thickness direction, and a first average value (Lc1) of the lengths along the thickness direction of the crystal grains is 10 μm or more.
H01F 1/00 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties
H01F 1/055 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5
H01F 1/059 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and Va elements, e.g. Sm2Fe17N2
H02K 15/03 - Processes or apparatus specially adapted for manufacturing, assembling, maintaining or repairing of dynamo-electric machines of stator or rotor bodies having permanent magnets
H10D 48/40 - Devices controlled by magnetic fields
15.
MAGNETIC MATERIAL FILM, MAGNETIC-MATERIAL-FILM-EQUIPPED MEMBER, ACTUATOR, AND SENSOR
[Problem] To provide: a highly magnetized magnetic material film having a thickness of several tens to several hundreds of microns; a magnetic-material-film-equipped member having the magnetic material film; an actuator; and a sensor. [Solution] A magnetic material film 10 includes a main magnetic material layer 20 having at least one or more crystal particles, and the concentration (T/(R+T)) of a transition metal element (T) with respect to the total (R+T) of a rare earth element (R) and the transition metal element (T) in at least one or more crystal particles 22 changes along the thickness direction of the main magnetic material layer 20.
H01F 1/00 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties
H01F 1/055 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5
H01F 1/059 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and Va elements, e.g. Sm2Fe17N2
H01F 7/06 - ElectromagnetsActuators including electromagnets
H02K 15/03 - Processes or apparatus specially adapted for manufacturing, assembling, maintaining or repairing of dynamo-electric machines of stator or rotor bodies having permanent magnets
16.
POSITION DETECTING SYSTEM, DETECTION TARGET MEMBER, AND MAGNETIC DETECTING DEVICE
[Problem] To provide a position sensor having high detection accuracy while being downsized. [Solution] A position detecting system includes: a detecting device 110 having a magnetic sensor 112 that detects changes in a magnetic field; and a target member 120 that faces the magnetic sensor 112 at a prescribed interval and that can be disposed so as to be capable of moving relative to the magnetic sensor 112. The target member 120 or the detecting device 110 is provided with a 300 μm or less magnet film 10 that is provided on the top surface of a base material layer 1.
A position detection device includes a magnet that generates a magnetic field to be detected, and a magnetic sensor. The magnetic sensor detects the magnetic field to be detected and generates a detection value corresponding to the position of the magnet. The magnetic field to be detected has a first direction that changes within a first plane, at a reference position in the first plane. The magnetic sensor includes four MR elements. Each of the MR elements includes a first magnetic layer having first magnetization that can change in direction within a second plane corresponding to the each of the MR elements. The first plane and the second plane intersect at a dihedral angle α other than 90°. A detection value depends on the direction of the first magnetization.
G01D 5/16 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying resistance
A filter device includes a stack including a plurality of dielectric layers stacked together, and a resonator configured using a conductor integrated into the stack. Each of the plurality of dielectric layers is formed of a dielectric material, and has a resonance frequency that changes depending on a temperature. In the dielectric material, the resonance frequency changes linearly with respect to a change in the temperature when the temperature is within a first temperature range, and the resonance frequency changes nonlinearly with respect to the change in the temperature when the temperature is within a second temperature range.
The present application addresses a chip component for use in a MEMS setup as well as a MEMS microphone having such a chip component. The chip component has an electronically functional component that is at least partially covered in a cover. The cover has a coefficient of thermal expansion of below 200 ppm/K.
The present application addresses a MEMS microphone comprising chip component and said chip component. The chip component (3a) is at least partially covered by a thermally insulating cover (3c). A thermal expansion reducing layer (3b) is provided between the chip component (3a) and the cover (3c). The thermal expansion reducing layer (3b) has a smaller coefficient of thermal expansion than the cover (3c).
A coil device includes a winding section comprised of a wound wire, a core, and a terminal fitting attached to the flange portion. The core includes a winding core portion provided with the winding section and a flange portion formed at an end of the winding core portion in its axial direction. The terminal fitting includes a main body portion disposed on an outer end surface of the flange portion, a mounting portion continuing to the main body portion and bending from the outer end surface toward a mounting surface of the flange portion, and a wire connection portion continuing to the main body portion and bending from the outer end surface toward a side surface of the flange portion. The mounting portion includes a plurality of mounting pieces arranged with at least one gap. The main body portion is adhered on the outer end surface by adhesive.
09 - Scientific and electric apparatus and instruments
10 - Medical apparatus and instruments
11 - Environmental control apparatus
42 - Scientific, technological and industrial services, research and design
Goods & Services
Flip chip mounting machine for the manufacture of electric, electronic and semiconductor devices and components Capacitors; Multilayer Ceramic Chip Capacitors; Multilayer Capacitors; Ceramic Capacitors; Harmonic Filtering Components; Disc Type Capacitors with Lead; High Voltage Ceramic Capacitors; Multilayer Ceramic Chip Capacitors with Dipped Radial Lead; Ultra High Voltage Ceramic Capacitors; PLZT (lead lanthanum zirconate titanate) ceramic capacitors; 3-Terminal Feedthrough Capacitors; SMD (Surface Mounted Device) Inductors; SMT (Surface Mount Technology) Inductors; SMD (Surface Mounted Device) Coils; SMT (Surface Mount Technology) Coils; Surface Mount Inductors; Surface Mount Coils; Leaded Inductors; Leaded Coils; Transponder Coils; High Current Flat Wire Inductors; Coupled Inductors; PFC (Power Factor Correction) Choke Coils; Choke Coils; Power Inductors; EMC (Electromagnetic Compatibility) Components, namely, Chip Beads, Noise Suppression Filters, Noise Filters, ESD (Electrostatic Discharge) Notch Filters, 3-terminal Filters, Signal Line Common Mode Chokes, Signal Line Common Mode Filters, Common Mode Chokes; Common Mode Chokes Coils, Common Mode Filters, Power Line Common Mode Chokes, Power Line Common Mode Filters, Differential Mode Chokes, Clamp Filters, Ferrite Cores with Case, Feedthrough Capacitors, Feedthrough Filters, Power Line EMC Filters, EMC Filters, Active Leakage Current Filters that measure earth leakage currents, Current Filters, EMC (Electro Magnetic Compatibility) Reactors, Output Filters, LCL (Inductor-capacitor-inductor) Filters, Ferrites For EMC Suppression, Noise Suppression Sheets made of magnetic materials and resin, Power Line Chokes, High-Current Ring Core Chokes, D-Core Chokes, EMI (Electromagnetic Interference) Chokes, Power EMC Filters, Automotive Filter, EMC (Electromagnetic Compatibility) Feedthrough Filters; RF (Radio Frequency) Components, namely, Filters for radio frequency suppression, Diplexers, Triplexers, Baluns, Directional Couplers, Signal dividers, Signal splitters, Chip Antennas; Signal isolators, Isolators whose function is to isolate and remove adverse current to protect circuits and stabilize their operation, Circulators, Antennas; Voltage Protection Devices, namely, Multilayer Chip Protectors; Temperature Protection sensors; Temperature Protection thermistors; Diodes; Ceramic Transient Voltage Suppressors; Varistors; Surge Arresters; Current Protection Thermistors; PTC (Positive Temperature Coefficient) Inrush Current Limiters; NTC (Negative Temperature Coefficient) Inrush Current Limiters; Temperature Sensors; NTC (Negative Temperature Coefficient) Thermistors; PTC (Positive Temperature Coefficient) Thermistors; Liquid Level Sensors; Powder Level Sensors in toner for printers; Pressure Measurement Sensors; Humidity Sensors; Surface potential sensors for sensing the surface potential of charged drums; Printer toner Quantity Sensors; Stroke sensors for non-contact location tracking applications; Gear Tooth Sensors to measure gear rotations in motor vehicles and two-wheeled vehicles; Electric Current Sensors; Angle Measurement Sensors; Hall Effect Switches; Linear Hall Effect Sensors; Hall Effect Sensors; Motion Sensors; Inertial Sensors; Vibration sensors; Inclinometers; TMR (Tunnel Magneto Resistance) Sensors; NTC (Negative Temperature Coefficient) Temperature Measurement Sensors; NTC (Negative Temperature Coefficient) Elements; NTC (Negative Temperature Coefficient) Sensor Assembly; NTC (Negative Temperature Coefficient) Sensors; Electric Motor Protection Sensors; Pressure Sensor; Pressure Sensor Transmitters; Ultrasonic Sensors; Clamp AC Current Sensors; Powder Level Sensors for sensing residual printer toner and residual powders thereon; Piezoelectric Printer Toner Sensors; Magnetic Printer Toner Density Sensors; Magnetic Printer Toner Quantity Sensors; Magnetic Printer Toner Sensors; Printer Toner Density Sensors; Printer Toner Sensors; MEMS (Microelectrical Mechanical Systems) Gyroscope Sensors; MEMS (Microelectrical Mechanical Systems) Accelerometers; Buzzers; Microphones; Piezo speakers; Piezoelectric Actuators; Actuators; Piezo Actuators; MEMS Microphones; Microphone; PTC Thermistors as Heating Elements; Multilayer Piezo Actuator Stacks; Apparatus for generating atmospheric pressure plasma; Control and regulating apparatus, electric, for use in relation to the following goods: Apparatus for generating atmospheric pressure plasma; Ozonisers [ozonators]; Chemical and Physical equipment, for use in the following fields: Production of atmospheric pressure plasma, All goods included in class Ozone generators for use in administering ozone therapy; Ozonizers [ozonators] for medical use; Electric apparatus for generating atmospheric-pressure plasma and low-pressure plasma; Electric control and regulating apparatus, and chemical and physical apparatus for generating low-pressure plasma using at least one piezoelectric element and for generating atmospheric-pressure plasma, included in class 9; High-Voltage Contactors; Switching Spark Gaps; Piezoelectric Buzzers; Electromagnetic Buzzers; Ultrasonic Nebulizer Units for scientific use; Transformers; Current Sense Transformers; Step-up Transformers; Pulse Transformers; Ferrite Cores; Noise Suppressing Sheets; Magnetic Sheets; Noise Suppression Shield in the form of magnetic sheets; NFC (Near Field Communication) Antennas Shield; Anechoic Chambers; Radio Wave Absorbers; Power Supplies; Switching power supplies; AC (alternating current) to DC (direct current) Power Supplies; DC (direct current) to DC (direct current) Converters; Programmable Power Supplies; High Voltage Power Supplies; Bidirectional DC (direct current) to DC (direct current) Converters; Programmable Electronic Loads; Embedded DC (direct current) to DC (direct current) Converters; Magnets; Ferrite Magnets; Neodymium Magnets; PCIe (Peripheral Component Interconnect express) solid state drives; Solid state drives; Computer Flash Memory chips and cards; CF (Compact Flash) Memory Card; NAND flash memories; Compact Flash memory card; SATA (Serial Advanced Technology Attachment) solid state drives; SD (Secure Digital) Memory Cards; Micro SD (Secure Digital) memory cards; Memory cards; Flash memory controller, namely, the digital circuit that manages the reading and writing of data in NAND flash memory; Memory controller, namely, the digital circuit that manages the reading and writing of data in NAND flash memory; Wireless power coil units; Wireless power transfer units and modules; Wireless power transfer units and modules for the wireless charging of rechargeable batteries in electronic devices, batteries in industrial equipment, batteries in electric vehicles, batteries in wearable devices and batteries in medical devices; FOUP Load Port, namely, a station for supporting a semiconductor wafer transporting container where the cover of the transporting container is separated or separable from the transporting container; Transparent Conductive Film; Solar cells; HDD Heads; Magnetic heads for reading and reproducing data; Magnetic recording heads; Batteries; Electric batteries; Lithium-Ion Batteries; Rechargeable batteries; Rechargeable electric batteries; Solid-State Batteries; ASIC (Application Specific Integrated Circuit); Microcontrollers; Micro modules comprising substrates with built-in ICs [integrated circuits]; Circuit boards; electric circuit boards; printed circuit boards; Downloadable software for use in positioning systems for automotive, robotic, venue or personal applications; Positioning Software; Downloadable software for use in connection with machine learning applications; Thermometers; Aluminum Electrolytic Capacitors, namely, Capacitors with Screw Terminals, Snap-in, Multi Pin, Large Size Capacitors, Ultra-Compact Snap-in capacitors, Axial Capacitors, Hybrid Polymer Capacitors; Capacitors, Single-Ended (Radial) Capacitors; Film Capacitors, namely, Metallized Polyester Capacitors, Metallized Polypropylene Capacitors, EMI (Electromagnetic Interference) Suppression Capacitors, Power Capacitors; PFC (power factor correction) Components, namely, PFC (power factor correction) Capacitors; Harmonic Filtering Components, namely, MV (Medium Voltage) Surge Capacitors, Vacuum Contactors, Active Harmonic Filter, Power Optimizer, Static Var Generator, PFC (power factor correction) Controllers, Capacitor Contactors, Thyristors and thyristor switches, Grid analysis tool for measuring, displaying and storage of electric parameters in low-voltage grids; Optical image stabilization modules for use in cellphone cameras, digital cameras and tablet computers for stabilizing images to be captured via photography and video; Optical image stabilization actuators; Optical image stabilizers; Electronic circuits; Hard disk drive suspensions; Blank magnetic tapes; Blank magnetic discs; Blank magnetic optical disks; Blank optical disks; Blank compact discs, blank DVDs and other digital recording media; Earphones; Headphones; SAW (surface acoustic wave) components and modules Wireless vital data monitoring sensors in the nature of measuring sensors for monitoring duration, frequency or status of pulse rate, heart rate, sleep time, meal time, conversation time, steps, body temperature and physical movements for medical use Humidifiers Design of integrated circuits; Product testing, namely, testing electronic products for electromagnetic emissions and immunity from electromagnetic interferences; Engineering consultation, evaluation and electrical product design and development for others of electronic goods relating to the electromagnetic emissions and immunity from electromagnetic interference of electronic goods; Measuring and evaluating over-the-air signals of mobile terminals that emit RF signals; Development and design of sensor systems for remote process control, for monitoring, system control, diagnostics and error reporting; Design, development and maintenance of computer software; EMC (Electromagnetic Compatibility) testing
To reduce the influence of disturbance noise in a magnetic sensor provided with an external magnetic body around which a compensation coil is wound. A magnetic sensor includes an external magnetic body that collects a magnetic field to be detected in a magnetosensitive element and a compensation coil. The compensation coil includes a solenoid part wound around the external magnetic body and lead-out parts C1 and C2 that connect both ends of the solenoid part respectively to connection pins P1 and P2. The lead-out part C2 passes through the inner diameter area of the solenoid part to be connected to the connection pin P2. This makes the second lead-out part unlikely to act as an antenna, which can reduce the influence of disturbance noise.
To prevent, in a magnetic sensor provided with an external magnetic body for collecting magnetic flux in a magnetism detection element, breakage of the external magnetic body. A magnetic sensor includes: a sensor chip having an element formation surface on which magnetism detection elements are formed, an external magnetic body having an end face positioned at the leading end of the longitudinal direction thereof and facing the element formation surface and side surfaces constituting the outer peripheral surface of the cross section thereof perpendicular to the longitudinal direction, and a protective resin at least partially covering the element formation surface and the side surfaces of the external magnetic body. This makes it possible to prevent breakage of the sensor chip and external magnetic body upon application of an external shock.
To provide a thin film capacitor having a pair of terminal electrodes capable of being disposed on the same plane. A thin film capacitor 1 includes a metal foil having a non-roughened center portion and a roughened upper surface, a dielectric film covering the roughened upper surface of the metal foil, an electrode layer contacting the non-roughened center portion of the metal foil through an opening formed in the dielectric film, and an electrode layer contacting the dielectric film without contacting the metal foil. A thickness of the center portion of the metal foil at a position overlapping the electrode layer is larger than a thickness thereof at a position overlapping the electrode layer.
1-aab-ccc (where Ln represents one or more elements selected from rare earth elements, Y, and Zr, and the subscripts a, b, and c satisfy the respective relationships a ≤ 0.30, 3.4 ≤ b ≤ 3.7, and c ≤ 0.25). For the Ln described above, at least La among the rare earth elements is selected, and the La accounts for 89.0 mol% or more of the Ln.
09 - Scientific and electric apparatus and instruments
10 - Medical apparatus and instruments
11 - Environmental control apparatus
42 - Scientific, technological and industrial services, research and design
Goods & Services
Flip chip mounting machine for the manufacture of electric, electronic and semiconductor devices and components Capacitors; Multilayer Ceramic Chip Capacitors; Multilayer Capacitors; Ceramic Capacitors; Harmonic Filtering Components; Disc Type Capacitors with Lead; High Voltage Ceramic Capacitors; Multilayer Ceramic Chip Capacitors with Dipped Radial Lead; Ultra High Voltage Ceramic Capacitors; PLZT (lead lanthanum zirconate titanate) ceramic capacitors; 3-Terminal Feedthrough Capacitors; SMD (Surface Mounted Device) Inductors; SMT (Surface Mount Technology) Inductors; SMD (Surface Mounted Device) Coils; SMT (Surface Mount Technology) Coils; Surface Mount Inductors; Surface Mount Coils; Leaded Inductors; Leaded Coils; Transponder Coils; High Current Flat Wire Inductors; Coupled Inductors; PFC (Power Factor Correction) Choke Coils; Choke Coils; Power Inductors; EMC (Electromagnetic Compatibility) Components, namely, Chip Beads, Noise Suppression Filters, Noise Filters, ESD (Electrostatic Discharge) Notch Filters, 3-terminal Filters, Signal Line Common Mode Chokes, Signal Line Common Mode Filters, Common Mode Chokes; Common Mode Chokes Coils, Common Mode Filters, Power Line Common Mode Chokes, Power Line Common Mode Filters, Differential Mode Chokes, Clamp Filters, Ferrite Cores with Case, Feedthrough Capacitors, Feedthrough Filters, Power Line EMC Filters, EMC Filters, Active Leakage Current Filters that measure earth leakage currents, Current Filters, EMC (Electro Magnetic Compatibility) Reactors, Output Filters, LCL (Inductor-capacitor-inductor) Filters, Ferrites For EMC Suppression, Noise Suppression Sheets made of magnetic materials and resin, Power Line Chokes, High-Current Ring Core Chokes, D-Core Chokes, EMI (Electromagnetic Interference) Chokes, Power EMC Filters, Automotive Filter, EMC (Electromagnetic Compatibility) Feedthrough Filters; RF (Radio Frequency) Components, namely, Filters for radio frequency suppression, Diplexers, Triplexers, Baluns, Directional Couplers, Signal dividers, Signal splitters, Chip Antennas; Signal isolators, Isolators whose function is to isolate and remove adverse current to protect circuits and stabilize their operation, Circulators, Antennas; Voltage Protection Devices, namely, Multilayer Chip Protectors; Temperature Protection sensors; Temperature Protection thermistors; Diodes; Ceramic Transient Voltage Suppressors; Varistors; Surge Arresters; Current Protection Thermistors; PTC (Positive Temperature Coefficient) Inrush Current Limiters; NTC (Negative Temperature Coefficient) Inrush Current Limiters; Temperature Sensors; NTC (Negative Temperature Coefficient) Thermistors; PTC (Positive Temperature Coefficient) Thermistors; Liquid Level Sensors; Powder Level Sensors in toner for printers; Pressure Measurement Sensors; Humidity Sensors; Surface potential sensors for sensing the surface potential of charged drums; Printer toner Quantity Sensors; Stroke sensors for non-contact location tracking applications; Gear Tooth Sensors to measure gear rotations in motor vehicles and two-wheeled vehicles; Electric Current Sensors; Angle Measurement Sensors; Hall Effect Switches; Linear Hall Effect Sensors; Hall Effect Sensors; Motion Sensors; Inertial Sensors; Vibration sensors; Inclinometers; TMR (Tunnel Magneto Resistance) Sensors; NTC (Negative Temperature Coefficient) Temperature Measurement Sensors; NTC (Negative Temperature Coefficient) Elements; NTC (Negative Temperature Coefficient) Sensor Assembly; NTC (Negative Temperature Coefficient) Sensors; Electric Motor Protection Sensors; Pressure Sensor; Pressure Sensor Transmitters; Ultrasonic Sensors; Clamp AC Current Sensors; Powder Level Sensors for sensing residual printer toner and residual powders thereon; Piezoelectric Printer Toner Sensors; Magnetic Printer Toner Density Sensors; Magnetic Printer Toner Quantity Sensors; Magnetic Printer Toner Sensors; Printer Toner Density Sensors; Printer Toner Sensors; MEMS (Microelectrical Mechanical Systems) Gyroscope Sensors; MEMS (Microelectrical Mechanical Systems) Accelerometers; Buzzers; Microphones; Piezo speakers; Piezoelectric Actuators; Actuators; Piezo Actuators; MEMS Microphones; Microphone; PTC Thermistors as Heating Elements; Multilayer Piezo Actuator Stacks; Apparatus for generating atmospheric pressure plasma; Control and regulating apparatus, electric, for use in relation to the following goods: Apparatus for generating atmospheric pressure plasma; Ozonisers [ozonators]; Chemical and Physical equipment, for use in the following fields: Production of atmospheric pressure plasma, All goods included in class Ozone generators for use in administering ozone therapy; Ozonizers [ozonators] for medical use; Electric apparatus for generating atmospheric-pressure plasma and low-pressure plasma; Electric control and regulating apparatus, and chemical and physical apparatus for generating low-pressure plasma using at least one piezoelectric element and for generating atmospheric-pressure plasma, included in class 9; High-Voltage Contactors; Switching Spark Gaps; Piezoelectric Buzzers; Electromagnetic Buzzers; Ultrasonic Nebulizer Units for scientific use; Transformers; Current Sense Transformers; Step-up Transformers; Pulse Transformers; Ferrite Cores; Noise Suppressing Sheets; Magnetic Sheets; Noise Suppression Shield in the form of magnetic sheets; NFC (Near Field Communication) Antennas Shield; Anechoic Chambers; Radio Wave Absorbers; Power Supplies; Switching power supplies; AC (alternating current) to DC (direct current) Power Supplies; DC (direct current) to DC (direct current) Converters; Programmable Power Supplies; High Voltage Power Supplies; Bidirectional DC (direct current) to DC (direct current) Converters; Programmable Electronic Loads; Embedded DC (direct current) to DC (direct current) Converters; Magnets; Ferrite Magnets; Neodymium Magnets; PCIe (Peripheral Component Interconnect express) solid state drives; Solid state drives; Computer Flash Memory chips and cards; CF (Compact Flash) Memory Card; NAND flash memories; Compact Flash memory card; SATA (Serial Advanced Technology Attachment) solid state drives; SD (Secure Digital) Memory Cards; Micro SD (Secure Digital) memory cards; Memory cards; Flash memory controller, namely, the digital circuit that manages the reading and writing of data in NAND flash memory; Memory controller, namely, the digital circuit that manages the reading and writing of data in NAND flash memory; Wireless power coil units; Wireless power transfer units and modules; Wireless power transfer units and modules for the wireless charging of rechargeable batteries in electronic devices, batteries in industrial equipment, batteries in electric vehicles, batteries in wearable devices and batteries in medical devices; FOUP Load Port, namely, a station for supporting a semiconductor wafer transporting container where the cover of the transporting container is separated or separable from the transporting container; Transparent Conductive Film; Solar cells; HDD Heads; Magnetic heads for reading and reproducing data; Magnetic recording heads; Batteries; Electric batteries; Lithium-Ion Batteries; Rechargeable batteries; Rechargeable electric batteries; Solid-State Batteries; ASIC (Application Specific Integrated Circuit); Microcontrollers; Micro modules comprising substrates with built-in ICs [integrated circuits]; Circuit boards; electric circuit boards; printed circuit boards; Downloadable software for use in positioning systems for automotive, robotic, venue or personal applications; Positioning Software; Downloadable software for use in connection with machine learning applications; Thermometers; Aluminum Electrolytic Capacitors, namely, Capacitors with Screw Terminals, Snap-in, Multi Pin, Large Size Capacitors, Ultra-Compact Snap-in capacitors, Axial Capacitors, Hybrid Polymer Capacitors; Capacitors, Single-Ended (Radial) Capacitors; Film Capacitors, namely, Metallized Polyester Capacitors, Metallized Polypropylene Capacitors, EMI (Electromagnetic Interference) Suppression Capacitors, Power Capacitors; PFC (power factor correction) Components, namely, PFC (power factor correction) Capacitors; Harmonic Filtering Components, namely, MV (Medium Voltage) Surge Capacitors, Vacuum Contactors, Active Harmonic Filter, Power Optimizer, Static Var Generator, PFC (power factor correction) Controllers, Capacitor Contactors, Thyristors and thyristor switches, Grid analysis tool for measuring, displaying and storage of electric parameters in low-voltage grids; Optical image stabilization modules for use in cellphone cameras, digital cameras and tablet computers for stabilizing images to be captured via photography and video; Optical image stabilization actuators; Optical image stabilizers; Electronic circuits; Hard disk drive suspensions; Blank magnetic tapes; Blank magnetic discs; Blank magnetic optical disks; Blank optical disks; Blank compact discs, blank DVDs and other digital recording media; Earphones; Headphones; SAW (surface acoustic wave) components and modules Wireless vital data monitoring sensors in the nature of measuring sensors for monitoring duration, frequency or status of pulse rate, heart rate, sleep time, meal time, conversation time, steps, body temperature and physical movements for medical use Humidifiers Design of integrated circuits; Product testing, namely, testing electronic products for electromagnetic emissions and immunity from electromagnetic interferences; Engineering consultation, evaluation and electrical product design and development for others of electronic goods relating to the electromagnetic emissions and immunity from electromagnetic interference of electronic goods; Measuring and evaluating over-the-air signals of mobile terminals that emit RF signals; Development and design of sensor systems for remote process control, for monitoring, system control, diagnostics and error reporting; Design, development and maintenance of computer software; EMC (Electromagnetic Compatibility) testing
09 - Scientific and electric apparatus and instruments
10 - Medical apparatus and instruments
11 - Environmental control apparatus
42 - Scientific, technological and industrial services, research and design
Goods & Services
Flip chip mounting machine for the manufacture of electric, electronic and semiconductor devices and components Capacitors; Multilayer Ceramic Chip Capacitors; Multilayer Capacitors; Ceramic Capacitors; Harmonic Filtering Components; Disc Type Capacitors with Lead; High Voltage Ceramic Capacitors; Multilayer Ceramic Chip Capacitors with Dipped Radial Lead; Ultra High Voltage Ceramic Capacitors; PLZT (lead lanthanum zirconate titanate) ceramic capacitors; 3-Terminal Feedthrough Capacitors; SMD (Surface Mounted Device) Inductors; SMT (Surface Mount Technology) Inductors; SMD (Surface Mounted Device) Coils; SMT (Surface Mount Technology) Coils; Surface Mount Inductors; Surface Mount Coils; Leaded Inductors; Leaded Coils; Transponder Coils; High Current Flat Wire Inductors; Coupled Inductors; PFC (Power Factor Correction) Choke Coils; Choke Coils; Power Inductors; EMC (Electromagnetic Compatibility) Components, namely, Chip Beads, Noise Suppression Filters, Noise Filters, ESD (Electrostatic Discharge) Notch Filters, 3-terminal Filters, Signal Line Common Mode Chokes, Signal Line Common Mode Filters, Common Mode Chokes; Common Mode Chokes Coils, Common Mode Filters, Power Line Common Mode Chokes, Power Line Common Mode Filters, Differential Mode Chokes, Clamp Filters, Ferrite Cores with Case, Feedthrough Capacitors, Feedthrough Filters, Power Line EMC Filters, EMC Filters, Active Leakage Current Filters that measure earth leakage currents, Current Filters, EMC (Electro Magnetic Compatibility) Reactors, Output Filters, LCL (Inductor-capacitor-inductor) Filters, Ferrites For EMC Suppression, Noise Suppression Sheets made of magnetic materials and resin, Power Line Chokes, High-Current Ring Core Chokes, D-Core Chokes, EMI (Electromagnetic Interference) Chokes, Power EMC Filters, Automotive Filter, EMC (Electromagnetic Compatibility) Feedthrough Filters; RF (Radio Frequency) Components, namely, Filters for radio frequency suppression, Diplexers, Triplexers, Baluns, Directional Couplers, Signal dividers, Signal splitters, Chip Antennas; Signal isolators, Isolators whose function is to isolate and remove adverse current to protect circuits and stabilize their operation, Circulators, Antennas; Voltage Protection Devices, namely, Multilayer Chip Protectors; Temperature Protection sensors; Temperature Protection thermistors; Diodes; Ceramic Transient Voltage Suppressors; Varistors; Surge Arresters; Current Protection Thermistors; PTC (Positive Temperature Coefficient) Inrush Current Limiters; NTC (Negative Temperature Coefficient) Inrush Current Limiters; Temperature Sensors; NTC (Negative Temperature Coefficient) Thermistors; PTC (Positive Temperature Coefficient) Thermistors; Liquid Level Sensors; Powder Level Sensors in toner for printers; Pressure Measurement Sensors; Humidity Sensors; Surface potential sensors for sensing the surface potential of charged drums; Printer toner Quantity Sensors; Stroke sensors for non-contact location tracking applications; Gear Tooth Sensors to measure gear rotations in motor vehicles and two-wheeled vehicles; Electric Current Sensors; Angle Measurement Sensors; Hall Effect Switches; Linear Hall Effect Sensors; Hall Effect Sensors; Motion Sensors; Inertial Sensors; Vibration sensors; Inclinometers; TMR (Tunnel Magneto Resistance) Sensors; NTC (Negative Temperature Coefficient) Temperature Measurement Sensors; NTC (Negative Temperature Coefficient) Elements; NTC (Negative Temperature Coefficient) Sensor Assembly; NTC (Negative Temperature Coefficient) Sensors; Electric Motor Protection Sensors; Pressure Sensor; Pressure Sensor Transmitters; Ultrasonic Sensors; Clamp AC Current Sensors; Powder Level Sensors for sensing residual printer toner and residual powders thereon; Piezoelectric Printer Toner Sensors; Magnetic Printer Toner Density Sensors; Magnetic Printer Toner Quantity Sensors; Magnetic Printer Toner Sensors; Printer Toner Density Sensors; Printer Toner Sensors; MEMS (Microelectrical Mechanical Systems) Gyroscope Sensors; MEMS (Microelectrical Mechanical Systems) Accelerometers; Buzzers; Microphones; Piezo speakers; Piezoelectric Actuators; Actuators; Piezo Actuators; MEMS Microphones; Microphone; PTC Thermistors as Heating Elements; Multilayer Piezo Actuator Stacks; Apparatus for generating atmospheric pressure plasma; Control and regulating apparatus, electric, for use in relation to the following goods: Apparatus for generating atmospheric pressure plasma; Ozonisers [ozonators]; Chemical and Physical equipment, for use in the following fields: Production of atmospheric pressure plasma, All goods included in class Ozone generators for use in administering ozone therapy; Ozonizers [ozonators] for medical use; Electric apparatus for generating atmospheric-pressure plasma and low-pressure plasma; Electric control and regulating apparatus, and chemical and physical apparatus for generating low-pressure plasma using at least one piezoelectric element and for generating atmospheric-pressure plasma, included in class 9; High-Voltage Contactors; Switching Spark Gaps; Piezoelectric Buzzers; Electromagnetic Buzzers; Ultrasonic Nebulizer Units for scientific use; Transformers; Current Sense Transformers; Step-up Transformers; Pulse Transformers; Ferrite Cores; Noise Suppressing Sheets; Magnetic Sheets; Noise Suppression Shield in the form of magnetic sheets; NFC (Near Field Communication) Antennas Shield; Anechoic Chambers; Radio Wave Absorbers; Power Supplies; Switching power supplies; AC (alternating current) to DC (direct current) Power Supplies; DC (direct current) to DC (direct current) Converters; Programmable Power Supplies; High Voltage Power Supplies; Bidirectional DC (direct current) to DC (direct current) Converters; Programmable Electronic Loads; Embedded DC (direct current) to DC (direct current) Converters; Magnets; Ferrite Magnets; Neodymium Magnets; PCIe (Peripheral Component Interconnect express) solid state drives; Solid state drives; Computer Flash Memory chips and cards; CF (Compact Flash) Memory Card; NAND flash memories; Compact Flash memory card; SATA (Serial Advanced Technology Attachment) solid state drives; SD (Secure Digital) Memory Cards; Micro SD (Secure Digital) memory cards; Memory cards; Flash memory controller, namely, the digital circuit that manages the reading and writing of data in NAND flash memory; Memory controller, namely, the digital circuit that manages the reading and writing of data in NAND flash memory; Wireless power coil units; Wireless power transfer units and modules; Wireless power transfer units and modules for the wireless charging of rechargeable batteries in electronic devices, batteries in industrial equipment, batteries in electric vehicles, batteries in wearable devices and batteries in medical devices; FOUP Load Port, namely, a station for supporting a semiconductor wafer transporting container where the cover of the transporting container is separated or separable from the transporting container; Transparent Conductive Film; Solar cells; HDD Heads; Magnetic heads for reading and reproducing data; Magnetic recording heads; Batteries; Electric batteries; Lithium-Ion Batteries; Rechargeable batteries; Rechargeable electric batteries; Solid-State Batteries; ASIC (Application Specific Integrated Circuit); Microcontrollers; Micro modules comprising substrates with built-in ICs [integrated circuits]; Circuit boards; electric circuit boards; printed circuit boards; Downloadable software for use in positioning systems for automotive, robotic, venue or personal applications; Positioning Software; Downloadable software for use in connection with machine learning applications; Thermometers; Aluminum Electrolytic Capacitors, namely, Capacitors with Screw Terminals, Snap-in, Multi Pin, Large Size Capacitors, Ultra-Compact Snap-in capacitors, Axial Capacitors, Hybrid Polymer Capacitors; Capacitors, Single-Ended (Radial) Capacitors; Film Capacitors, namely, Metallized Polyester Capacitors, Metallized Polypropylene Capacitors, EMI (Electromagnetic Interference) Suppression Capacitors, Power Capacitors; PFC (power factor correction) Components, namely, PFC (power factor correction) Capacitors; Harmonic Filtering Components, namely, MV (Medium Voltage) Surge Capacitors, Vacuum Contactors, Active Harmonic Filter, Power Optimizer, Static Var Generator, PFC (power factor correction) Controllers, Capacitor Contactors, Thyristors and thyristor switches, Grid analysis tool for measuring, displaying and storage of electric parameters in low-voltage grids; Optical image stabilization modules for use in cellphone cameras, digital cameras and tablet computers for stabilizing images to be captured via photography and video; Optical image stabilization actuators; Optical image stabilizers; Electronic circuits; Hard disk drive suspensions; Blank magnetic tapes; Blank magnetic discs; Blank magnetic optical disks; Blank optical disks; Blank compact discs, blank DVDs and other digital recording media; Earphones; Headphones; SAW (surface acoustic wave) components and modules Wireless vital data monitoring sensors in the nature of measuring sensors for monitoring duration, frequency or status of pulse rate, heart rate, sleep time, meal time, conversation time, steps, body temperature and physical movements for medical use Humidifiers Design of integrated circuits; Product testing, namely, testing electronic products for electromagnetic emissions and immunity from electromagnetic interferences; Engineering consultation, evaluation and electrical product design and development for others of electronic goods relating to the electromagnetic emissions and immunity from electromagnetic interference of electronic goods; Measuring and evaluating over-the-air signals of mobile terminals that emit RF signals; Development and design of sensor systems for remote process control, for monitoring, system control, diagnostics and error reporting; Design, development and maintenance of computer software; EMC (Electromagnetic Compatibility) testing
A coil component includes an element body formed by laminating a plurality of insulator layers, and a pillar part disposed in the element body and extending in a lamination direction of the plurality of insulator layers. The pillar part has a plurality of pillar members laminated in the lamination direction. Between the two pillar members in the lamination direction, a defining part that defines a contact surface between the two pillar members is provided. The defining part is formed of a material different from a material of the pillar part, and is disposed at edges of the two pillar members when viewed from the lamination direction.
H01F 5/04 - Arrangements of electric connections to coils, e.g. leads
H01F 1/03 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity
A sensor including: a base material having a surface on which streaks are formed along a first direction in a plan view; and a conductive film pattern formed on or above the surface and configured to connect mutually different positions in an in-plane direction of the surface in a shape in which a length of a conductive path is longer than a length of a straight line connecting the different positions, in which in a plan view, the shape of the conductive film pattern comprises a shape in which each of straight lines parallel to the first direction passes across a conductive path center line of the conductive film pattern zero times or once but does not pass across the conductive path center line twice or more.
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
31.
SOFT MAGNETIC METAL POWDER, MAGNETIC CORE, AND MAGNETIC COMPONENT
A soft magnetic metal powder includes soft magnetic metal particles with a particle size of 5.0 μm or more. (y95/y50−y90/y50)/(0.95−0.90) is 20.0 or less, where y95 (μm) denotes D95, y90 (μm) denotes D90, and y50 (μm) denotes D50 of a particle size distribution of the soft magnetic metal particles with a particle size of 5.0 μm or more. A magnetic core includes soft magnetic metal particles with a Heywood diameter of 5.0 μm or more in a section of the magnetic core. (Y95/Y50−Y90/Y50)/(0.95−0.90) is 20.0 or less, where Y95 (μm) denotes D95, Y90 (μm) denotes D90, and Y50 (μm) denotes D50 of a particle size distribution of the soft magnetic metal particles with a Heywood diameter of 5.0 μm or more.
H01F 3/08 - Cores, yokes or armatures made from powder
H01F 1/20 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys in the form of particles, e.g. powder
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
A coil component may include a core portion including soft magnetic metal particles and a resin and a winding portion including a conductor wound. The winding portion may be inside the core portion. The core portion may include an axially central region and a coil corner neighboring region. The soft magnetic metal particles may include specific particles having a particle size of 10 μm or more and 50 μm or less. 0
A coil component may include a core portion including a soft magnetic metal material and a winding portion including a conductor wound. The winding portion may be inside the core portion. The core portion may include a central portion and an outer portion. The central portion may be disposed in an inside diameter portion of the winding portion. The outer portion may be disposed in a portion other than the central portion. The central portion may include a first central portion and a second central portion including different materials. The second central portion may be disposed around the first central portion. H, S, and S1 may be within specific ranges, where H denotes a height of the winding portion, S denotes a sectional area of the central portion, and S1 denotes a sectional area of the first central portion.
A nanogranular magnetic film includes first phases comprised of nano-domains dispersed in a second phase. The first phases include Fe and Co. The second phase includes at least one selected from the group consisting of O, N, and F. A CV of Fe/(Fe+Co) of grids is 0.150 or more and 0.500 or less, provided that a measurement range is determined in the nanogranular magnetic film, the measurement range is divided with the grids including at least 80,000 grids each measuring 1 nm×1 nm×1 nm, and Fe/(Fe+Co) of each of the grids is measured in atomic ratio.
[Problem] To provide an electronic component with a structure that facilitates dispersion of stress applied to terminal electrodes from the outside. [Solution] An electronic component 100 includes terminal electrodes E1, E2 located in a conductor layer 71 in a base body 110 and exposed from an outer surface 111, and a coil C1 at least a part of which is located in a conductor layer 74 in the base body 110, one end of which is connected to the terminal electrode E1 via a via conductor 81V, and the other end of which is connected to the terminal electrode E2 via a via conductor 84V. The via conductor 81V has a shape with a diameter that narrows toward the terminal electrode E1, and the via conductor 84V has a shape with a diameter that narrows toward the terminal electrode E2.
H01F 41/04 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets for manufacturing coils
[Problem] To improve insulation between coils in an electronic component having a structure in which a plurality of coils are embedded in an element body that contains a magnetic material. [Solution] A coil component 100 comprises: conductor layers L1-L3 which are embedded in a coil-embedding layer 10A of an element body 10; conductor bumps B1-B4 which are embedded in a bump-embedding layer 10B of the element body 10; and an insulating coating layer 19 which covers a mounting surface 15 of the element body 10 without covering at least some of the conductor bumps B1-B4. The element body 10 includes a magnetic material portion 17 comprising a magnetic material, and a resin material portion 18 comprising a resin material. The resin material portion 18 is positioned between the conductor layers L1-L3 and the magnetic material portion 17. The side faces 11-14 of the element body 10 include a region A comprising the coil-embedding layer 10A and a region B comprising the bump-embedding layer 10B. The conductor layers L1-L3 are embedded in the element body 10 without being exposed from the region A.
This magnetized rotary element includes a spin-orbit torque wiring and a first ferromagnetic layer connected to the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a topological insulator in which electrical conductors are dispersed.
G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
A coil component includes an element body, a first terminal electrode, a second terminal electrode, a first conductor disposed at a position closer to a principal surface in the element body and electrically connected to the first terminal electrode and the second terminal electrode, and a second conductor disposed at a position closer to a principal surface in the element body and electrically connected to the first terminal electrode and the second terminal electrode. The element body is formed of a material having light permeability, and an identification portion formed of a material different from a material of the first conductor is provided on a first surface facing the principal surface in the first conductor.
A soft magnetic metal particle may include a core particle and an insulation coating formed on a surface of the core particle. The insulation coating may include a first layer, a second layer, and a third layer. The first layer may contact the surface of the core particle, and the second layer may contact the first layer and the third layer. The first layer may include at least Fe, the second layer may include at least Ti, and the third layer may include at least Si.
H01F 1/24 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys in the form of particles, e.g. powder pressed, sintered, or bound together the particles being insulated
A nanogranular magnetic film includes first phases comprised of nano-domains dispersed in a second phase. The first phases include Fe and Co. The second phase includes a second phase compound including at least one selected from the group consisting of O, N, and F. A measurement range is determined in the nanogranular magnetic film. The measurement range is divided with grids including at least 80,000 grids each measuring 1 nm×1 nm×1 nm. Fe/(Fe+Co) and a concentration of the second phase compound of each of the grids are measured in atomic ratio. Provided that the grids are classified into MX-rich grids and MX-poor grids, a CV of Fe/(Fe+Co) of the MX-rich grids is larger than a CV of Fe/(Fe+Co) of the MX-poor grids.
A magnetoresistance effect element according to the present invention comprises: a substrate; a base layer that is provided on the substrate; and a laminated portion that is provided on the base layer and that comprises a magnetization free layer, a reference layer, and a non-magnetic layer provided between the magnetization free layer and the reference layer. The base layer comprises two or more metal nitride layers, and a metal oxynitride layer provided between a first metal nitride layer and a second metal nitride layer among the two or more metal nitride layers.
An example system includes an array of input nodes that includes a first input node and a second input node. The system also includes a set of multiply accumulate compute (MAC) components coupled to the first and second input nodes and configured to multiply and accumulate the first analog output and the second analog output. The system further includes a classification component coupled to an output of the set of MAC components and configured to classify the outputs of the set of MAC components. The first input node includes a first sensor configured to output a first analog signal according to changes in an external environment and a first analog frontend configured to generate a first analog output corresponding to the first analog signal. The second input node includes a second sensor and a second analog frontend configured to generate a second analog output corresponding to the second analog signal.
G06F 7/53 - Multiplying only in parallel-parallel fashion, i.e. both operands being entered in parallel
G06F 7/544 - Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state deviceMethods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using unspecified devices for evaluating functions by calculation
This negative electrode active material layer may contain a negative electrode active material and a fibrous material. The negative electrode active material may contain silicon. The fibrous material may contain at least one kind selected from the group consisting of titanium oxide, potassium titanate, aluminum oxide, silicon carbide, silicon nitride, and silicon oxide. The fiber length of the fibrous material may be 20 μm or more and 150 μm or less. The value obtained by dividing a thickness of the negative electrode active material layer by the fiber length may be 0.4 or more and 1.0 or less.
A multilayer coil component includes: an element body having a pair of first side surfaces opposite to each other in a first direction and a pair of second side surfaces opposite to each other in a second direction orthogonal to the first direction; and a coil disposed inside the element body and having a coil axis extending in a third direction orthogonal to the first direction and the second direction, in which one of the pair of first side surfaces is a mounting surface, and a ratio of a first gap in the first direction between the coil and the mounting surface to a size of the element body in the first direction is 12 to 30% in a cross section viewed in the third direction.
A magnetic sensor device includes a magnetic sensor and a processor. Each of a plurality of detection circuits of the magnetic sensor includes a magnetoresistive (MR) element. The MR element includes a free layer having a magnetic vortex structure and configured so that the center of the magnetic vortex structure moves depending on a target magnetic field. The plurality of detection circuits are configured to generate a plurality of detection signals each of which changes periodically with periodic changes in the direction of the target magnetic field and whose amplitude changes with a change in the strength of the target magnetic field. The processor is configured to generate an angle detection value and a strength detection value based on the plurality of detection signals.
G01D 5/16 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying resistance
G01B 7/30 - Measuring arrangements characterised by the use of electric or magnetic techniques for measuring angles or tapersMeasuring arrangements characterised by the use of electric or magnetic techniques for testing the alignment of axes
An antenna device is an antenna device including a mesh-shaped conductor pattern having a plurality of mesh portions, in which the conductor pattern includes a plurality of first electroconductive lines extending in a first direction and a plurality of second electroconductive lines extending in a second direction intersecting the first direction, an opening and a slit extending from the opening to an edge of the conductor pattern are formed in the conductor pattern as a region where the first electroconductive lines and the second electroconductive lines are not formed, a width of the slit is smaller than a width of the opening, and at least a part of the mesh portions arranged at an edge of the slit is opened to the slit.
Disclosed herein is a coil component that includes plural conductor layers embedded in the magnetic element body. Each of the conductor layers includes a coil pattern, and first and second connection patterns exposed from the magnetic element body. The conductor layers includes a first conductor layer positioned at one end portion in the stacking direction, a second conductor layer positioned at the other end portion in the stacking direction, and one or more third conductor layers positioned between the first and second conductor layers. In the second conductor layer, an outer peripheral end of the coil pattern is connected to the second connection pattern through a lead-out pattern. In at least one of the first to third conductor layers, the magnetic element body is disposed in a separation area overlapping the lead-out pattern in the stacking direction.
An example system includes an array of input nodes that includes a first input node and a second input node. The system also includes a set of multiply accumulate compute (MAC) components coupled to the first and second input nodes and configured to multiply and accumulate the first analog output and the second analog output. The system further includes a classification component coupled to an output of the set of MAC components and configured to classify the outputs of the set of MAC components. The first input node includes a first sensor configured to output a first analog signal according to changes in an external environment and a first analog frontend configured to generate a first analog output corresponding to the first analog signal. The second input node includes a second sensor and a second analog frontend configured to generate a second analog output corresponding to the second analog signal.
G06F 7/544 - Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state deviceMethods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using unspecified devices for evaluating functions by calculation
A switching mechanism is provided. The switching mechanism includes a movable portion, a fixed portion, and a driving assembly. The movable portion is movable relative to the fixed portion. The driving assembly is configured to drive the movable portion to move. The switching mechanism can further include a sensing assembly configured to detect the condition of the movable portion. The sensing assembly includes a first reference object and a first sensing member. The first sensing member corresponds to the first reference object, and the first reference object is adjacent to the first sensing member when the movable portion is in a first condition.
[Problem] To provide an electronic component suitable for being built in a substrate for use. [Solution] An electronic component 10 includes a magnetic element body 20 and a metal frame 30 embedded in the magnetic element body 20. The metal frame 30 includes: sections 31 and 32 which are substantially parallel to each other; a section 33 which connects one end of the section 31 and one end of the section 32; a section 34 which is connected to the other end of the section 31 and at least a part of which is exposed from a main surface 21 of the magnetic element body 20; and a section 35 which is connected to the other end of the section 32 and at least a part of which is exposed from a main surface 22 of the magnetic element body 20.
[Problem] To effectively suppress the concentration of an electric field caused when a reverse voltage is applied in a semiconductor device that has a structure in which an outer peripheral trench is provided in a drift layer. [Solution] A semiconductor device 1 comprises a semiconductor substrate 20, a drift layer 30 provided on the semiconductor substrate 20, an anode electrode 40 in contact with the drift layer 30, and a cathode electrode 50 in contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 61 which is provided so as to surround the anode electrode 40 in plan view without overlapping the anode electrode 40 in plan view, an outer peripheral trench 62 which is adjacent to the outer peripheral trench 61 and which is provided outside the outer peripheral trench 61 so as to surround the outer peripheral trench 61 in plan view, and a mesa region 311 which is positioned between the outer peripheral trench 61 and the outer peripheral trench 62. The width Wm1 of the mesa region 311 is less than the width Wt1 of the outer peripheral trench 61.
An antenna includes a radiation conductor having a circular shape, a feed line configured to feed power to the radiation conductor, and a terminal connected to the feed line, in which impedance of the feed line is greater than impedance of a feed point of the terminal, and a line length of the feed line is longer than a radius of the radiation conductor.
A battery includes an exterior can, an electrode group housed together with an alkaline electrolyte in the exterior can, and a sealing member that seals the exterior can. The electrode group is formed by winding a positive electrode and a negative electrode stacked together with a separator interposed therebetween into a spiral shape and has a columnar overall shape. A protruding negative electrode edge portion that is a partially protruding portion of the negative electrode is located at a lower end surface portion of the electrode group, and the protruding negative electrode edge portion is in direct contact with the inner surface of a bottom wall of the exterior can.
H01M 50/107 - Primary casingsJackets or wrappings characterised by their shape or physical structure having curved cross-section, e.g. round or elliptic
H01M 50/128 - Primary casingsJackets or wrappings characterised by the material having a layered structure comprising three or more layers with two or more layers of only inorganic material
H01M 50/179 - Arrangements of electric connectors penetrating the casing adapted for the shape of the cells for cells having curved cross-section, e.g. round or elliptic
H01M 50/188 - Sealing members characterised by the disposition of the sealing members the sealing members being arranged between the lid and terminal
H01M 50/528 - Fixed electrical connections, i.e. not intended for disconnection
H01M 50/533 - Electrode connections inside a battery casing characterised by the shape of the leads or tabs
Electronic device member comprises a first substrate, at least one protruding portion that protrudes from the first substrate, and a solder layer, wherein the at least one protruding portion includes at least one side surface, a tip surface, and a connection portion between the at least one side surface and the tip surface, and wherein the solder layer is in contact with the tip surface. At the connection portion, the at least one side surface and the tip surface form obtuse angle.
An electronic component includes: a substrate; a plurality of multilayer capacitors mounted on a first main surface of the substrate; and a sealing part formed of a resin and sealing the plurality of multilayer capacitors. A first external electrode and a second external electrode of the multilayer capacitor are mounted on the substrate by solder. At least a part of adjacent multilayer capacitors overlaps each other when viewed from a direction in which a pair of side surfaces of an element body are opposed to each other, the direction being along the first main surface of the substrate. In the adjacent multilayer capacitors, stacking directions of a plurality of internal electrodes are the same, and a distance between the adjacent multilayer capacitors is ½ or less of a height of the multilayer capacitor mounted on the substrate.
A metasurface reflector includes: a first metal layer and a second metal layer stacked in a first direction; a dielectric layer provided between the first metal layer and the second metal layer in the first direction; and a protective layer covering a surface of the second metal layer opposite to the dielectric layer. The dielectric layer includes a main surface on which the second metal layer is provided. The metasurface reflector is divided into a plurality of unit regions arranged in a second direction along the main surface and in a third direction along the main surface and intersecting the second direction. The second metal layer includes metal units respectively provided in all or some of the plurality of unit regions. The protective layer is made of a metal having a standard electrode potential higher than that of a metal constituting the second metal layer.
G02B 27/18 - Optical systems or apparatus not provided for by any of the groups , for optical projection, e.g. combination of mirror and condenser and objective
57.
METASURFACE REFLECTOR, PROJECTION DEVICE, AND NEAR-EYE WEARABLE DEVICE
A metasurface reflector includes: a first metal layer and a second metal layer stacked in a first direction; and a dielectric layer provided between the first metal layer and the second metal layer in the first direction. The dielectric layer includes a main surface on which the second metal layer is provided. The metasurface reflector is divided into a plurality of unit regions arranged in a second direction along the main surface and in a third direction along the main surface and intersecting the second direction. The second metal layer includes metal units respectively provided in all or some of the plurality of unit regions. Lengths of metal units, which are arranged in the second direction and set for a same wavelength among the metal units, in the second direction are different from each other.
An example battery system includes one or more battery packs. The battery system further includes a first sensor configured to detect a first property of the battery system and one or more second sensors configured to detect one or more second properties of the battery system. The battery system also includes control circuitry coupled to the one or more second sensors. The control circuitry is configured to detect a potential risk of thermal runaway of the one or more battery packs based on the detection of the one or more second properties, and, in response to detecting the potential risk of thermal runaway, activate the first sensor. The control circuitry is further configured to identify an increased risk of thermal runaway based on detection of the first property of the battery system, and, in response to identifying the increased risk of thermal runaway, disable the battery system.
H01M 10/48 - Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodesLithium-ion batteries
H01M 10/42 - Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
[Problem] To effectively suppress concentration of an electrical field which is generated when a reverse voltage is applied in a semiconductor device having a structure in which an outer peripheral trench is provided to a drift layer. [Solution] A semiconductor device 1 comprises: a semiconductor substrate 20; a drift layer 30 which is provided on the semiconductor substrate 20; an anode electrode 40 which is in contact with the drift layer 30; and a cathode electrode 50 which is in contact with the semiconductor substrate 20. The drift layer 30 has: an outer peripheral trench 61 which is provided along an outer edge 41 of the anode electrode 40 in a manner as to overlap with the outer edge 41 in a plan view; an outer peripheral trench 62 which is adjacent to the outer peripheral trench 61 and is provided at the outer side of the outer peripheral trench 61 in a manner as to surround the outer peripheral trench 61 in the plan view; and a mesa region 311 which is located between the outer peripheral trench 61 and the outer peripheral trench 62. The width Wm1 of the mesa region 311 is narrower than the width Wt1 of the outer peripheral trench 61.
A magnetic sensor includes an MR element. The MR element includes a free layer. The free layer has a first surface having a shape that is long in one direction and a second surface located opposite the first surface, and has a thickness that is a dimension in a direction perpendicular to the first surface. The first surface has a first edge and a second edge located at both lateral ends of the first surface. In a given cross section, the thickness at the first edge is smaller than the thickness at a predetermined point on the first surface between the first edge and the second edge.
This battery includes: an electrical storage element with positive and negative electrodes and insulating film between the positive and negative electrodes and electrically separates the positive and negative electrodes; and an airtight case housing the electrical storage element, wherein the case includes: a first member having bottom and tubular portions; a second member having a lid-like portion covering an opening of the first member and a surrounding wall portion covering the tubular portion from an outside; and a gasket between an end face of the first member and the second member and between the tubular portion and the second member, and wherein a non-contact portion with which the gasket is not in contact is provided in either one or both of a part of a first surface of the first member that faces the gasket and a part of a second surface of the second member that faces the gasket.
A current collector including: a resin layer having first and second surfaces on opposites sides; and a metal layer including copper. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The yield stress σY1 [MPa] is obtained by expressions (1) and (2) from a resin layer yield stress σY2 [MPa], a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a thickness D3 [μm] of the metal layer:
A current collector including: a resin layer having first and second surfaces on opposites sides; and a metal layer including copper. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The yield stress σY1 [MPa] is obtained by expressions (1) and (2) from a resin layer yield stress σY2 [MPa], a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a thickness D3 [μm] of the metal layer:
σ
Y
1
=
A
×
σ
Y
3
+
(
1
-
A
)
×
σ
Y
2
(
1
)
A
=
D
3
/
(
D
2
+
D
3
)
.
(
2
)
A current collector including: a resin layer having first and second surfaces on opposites sides; and a metal layer including copper. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The yield stress σY1 [MPa] is obtained by expressions (1) and (2) from a resin layer yield stress σY2 [MPa], a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a thickness D3 [μm] of the metal layer:
σ
Y
1
=
A
×
σ
Y
3
+
(
1
-
A
)
×
σ
Y
2
(
1
)
A
=
D
3
/
(
D
2
+
D
3
)
.
(
2
)
The yield stress σY3 [MPa] is obtained by the following expression (3) from a half-value width β [°] of an X-ray diffraction peak having the highest intensity in an X-ray diffraction pattern of the metal layer
A current collector including: a resin layer having first and second surfaces on opposites sides; and a metal layer including copper. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The yield stress σY1 [MPa] is obtained by expressions (1) and (2) from a resin layer yield stress σY2 [MPa], a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a thickness D3 [μm] of the metal layer:
σ
Y
1
=
A
×
σ
Y
3
+
(
1
-
A
)
×
σ
Y
2
(
1
)
A
=
D
3
/
(
D
2
+
D
3
)
.
(
2
)
The yield stress σY3 [MPa] is obtained by the following expression (3) from a half-value width β [°] of an X-ray diffraction peak having the highest intensity in an X-ray diffraction pattern of the metal layer
σ
Y
3
=
(
-
103
+
1
6
44
×
√
β
)
.
(
3
)
An element body includes a main surface and a pair of end surfaces. Each external electrode includes a conductive resin layer on the main surface. Each auxiliary internal electrode is disposed in the same layer as a corresponding internal electrode of a plurality of internal electrodes and is electrically connected to the external electrode to which the corresponding internal electrode is not electrically connected. Each auxiliary internal electrode includes first and second electrode portions. The first electrode portion is exposed to a corresponding end surface of the pair of end surfaces and is electrically and physically connected to the external electrode to which the corresponding internal electrode is not electrically connected. The second electrode portion is positioned between the conductive resin layer of the external electrode to which the corresponding internal electrode is not electrically connected and the corresponding internal electrode.
An electronic component includes an element body including a side surface and an external electrode disposed on the side surface. The external electrode includes a conductive resin layer. The conductive resin layer is formed with a ridge extending along at least one direction on the side surface. The conductive resin layer includes a region, on the side surface, having a thickness smaller than a thickness at the ridge.
Disclosed herein is an antenna device that includes a coil pattern having first to third winding parts each having a plurality of turns. The first winding part has an outer peripheral end being opened and an inner peripheral end connected to an outer peripheral end of the second winding part. The second winding part has an inner peripheral end connected to an outer peripheral end of the third winding part. The third winding part has an inner peripheral end being opened. Each turn of the second winding part has a first partial winding part wound concentrically with the third winding part and a second partial winding part protruding radially outward from the first partial winding part and wound about a center axis positioned between the first partial winding part and the first winding part.
H01Q 7/00 - Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
G06K 19/077 - Constructional details, e.g. mounting of circuits in the carrier
66.
MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY
The magnetic memory of the present disclosure comprises a plurality of magnetoresistive effect elements. Each of the magnetoresistive effect elements comprises a reference layer, a magnetization free layer, a tunnel barrier layer provided between the reference layer and the magnetization free layer, a first cap layer provided on the magnetization free layer, a second cap layer; and a ferromagnetic layer provided between the first cap layer and the second cap layer. The ferromagnetic layer has a thickness less than a thickness of the magnetization free layer.
A current collector including: a resin layer having first and second surfaces; and a metal layer including aluminum. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The current collector yield stress σY1 [MPa] is obtained by the following expressions (1) and (2) from a yield stress σY2 [MPa] of the resin layer, a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a metal layer thickness D3 [μm].
A current collector including: a resin layer having first and second surfaces; and a metal layer including aluminum. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The current collector yield stress σY1 [MPa] is obtained by the following expressions (1) and (2) from a yield stress σY2 [MPa] of the resin layer, a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a metal layer thickness D3 [μm].
σY1=A×σY3+(1−A)×σY2 (1)
A current collector including: a resin layer having first and second surfaces; and a metal layer including aluminum. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The current collector yield stress σY1 [MPa] is obtained by the following expressions (1) and (2) from a yield stress σY2 [MPa] of the resin layer, a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a metal layer thickness D3 [μm].
σY1=A×σY3+(1−A)×σY2 (1)
A=D3/(D2+D3) (2)
A current collector including: a resin layer having first and second surfaces; and a metal layer including aluminum. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The current collector yield stress σY1 [MPa] is obtained by the following expressions (1) and (2) from a yield stress σY2 [MPa] of the resin layer, a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a metal layer thickness D3 [μm].
σY1=A×σY3+(1−A)×σY2 (1)
A=D3/(D2+D3) (2)
The metal layer yield stress σY3 [MPa] is obtained by the following expression (3) from a half-value width β [°] of an X-ray diffraction peak having the highest intensity in an X-ray diffraction pattern of the metal layer.
A current collector including: a resin layer having first and second surfaces; and a metal layer including aluminum. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The current collector yield stress σY1 [MPa] is obtained by the following expressions (1) and (2) from a yield stress σY2 [MPa] of the resin layer, a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a metal layer thickness D3 [μm].
σY1=A×σY3+(1−A)×σY2 (1)
A=D3/(D2+D3) (2)
The metal layer yield stress σY3 [MPa] is obtained by the following expression (3) from a half-value width β [°] of an X-ray diffraction peak having the highest intensity in an X-ray diffraction pattern of the metal layer.
σY3=(−259+1285×√β) (3)
An equivalent circuit includes a first capacitor having a first capacitance, a circuit part configured to include an inductor component, a capacitor component, and a resistor connected in series with one another, the circuit part being connected in parallel with the first capacitor, and a second capacitor provided between the first capacitor and the circuit part and having a second capacitance. The first capacitance of the first capacitor changes in accordance with a voltage value of a direct current voltage applied to the first capacitor. The second capacitor has the positive second capacitance that changes in accordance with the voltage value of the direct current voltage applied to the first capacitor and that is N times (N>0) the first capacitance of the first capacitor.
Disclosed herein is an antenna device that includes: a metal plate having a first slit extending in a long side direction thereof and a second slit extending in a short side direction thereof; a first coil disposed so as to overlap with the metal plate in a plan view and circling along an outer edge of the metal plate; and a second coil electrically connected to the first coil, disposed so as to be surrounded by the first coil, and disposed so as to overlap with the first slit. The first slit has a first end that is open to divide the outer edge and a second end terminating without reaching the outer edge. The second slit has a third end that is open to divide the outer edge and a fourth end terminating without reaching the outer edge.
This electronic component includes: a base material which has a main surface; an insulating layer which is disposed on the main surface of the base material and has an opening; a conductive layer which is formed in the opening of the insulating layer; and a barrier layer which covers the conductive layer. At least the outer surface of the barrier layer has a shape which has one peak that protrudes upward.
This electronic component includes: a base material which has a main surface; an insulating layer which is disposed on the main surface of the base material and has a level difference part; a conductive layer which is formed on the level difference part of the insulating layer; and a barrier layer which covers the conductive layer. A surface of the conductive layer, which corresponds to the level difference part, has an inclination.
This negative electrode active material layer may contain a negative electrode active material and acicular particles. The negative electrode active material may contain silicon. The acicular particles may contain at least one kind selected from the group consisting of titanium oxide, potassium titanate, aluminum oxide, silicon carbide, silicon nitride, and silicon oxide, The length of the minor axis of each of the acicular particles may be 0.1 μm or more and 0.5 μm or less. The aspect ratio of each of the acicular particles may be 1.2 or more and 15.0 or less.
A magnetic sensor device includes a first detection circuit, a second detection circuit, and a processor. The processor is configured to execute first generation processing for generating a first initial detection value, second generation processing for generating a second initial detection value, first correction processing, second correction processing, and determination processing. The first correction processing is processing for correcting the first initial detection value and updating the first initial detection value. The second correction processing is processing for correcting the second initial detection value and updating the second initial detection value. The processor executes the determination processing after alternately executing the first correction processing and the second correction processing.
A magnetic sensor according to the invention has a magnetoresistive element having a multi-layer structure and a magnetically sensitive axis, and at least a soft magnetic body that is arranged near the magnetoresistive element. The soft magnetic body has a sloping line at least at a corner thereof, wherein the sloping line is tilted with respect to two sides of the soft magnetic body that extend to the corner, as viewed in a stacking direction of the magnetoresistive element.
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japan)
Inventor
Inoue, Yukari
Terada, Tomohiro
Kimura, Junichi
Uehara, Masato
Hirata, Kenji
Yamada, Hiroshi
Akiyama, Morito
Abstract
A nitride contains zinc and a group 4 element. The group 4 element contained in the nitride is at least one kind of element selected from the group consisting of titanium and zirconium. A content of zinc in the nitride is expressed as [Zn] atomic %. A total content of the group 4 element in the nitride is expressed as [M] atomic %. In the nitride, [M]/([Zn]+[M]) is more than 20% and less than 50%.
C01B 21/06 - Binary compounds of nitrogen with metals, with silicon, or with boron
H10N 30/076 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
An electronic component includes an element body and a plurality of inductors disposed in the element body. The plurality of inductors include an inductor unit, an inductor unit, and an inductor unit. Each of the inductor unit, the inductor unit, and the inductor unit has two conductors extending in one direction and a connection conductor connecting respective one ends of the two conductors in the one direction. Respective axial directions of the inductor unit, the inductor unit, and the inductor unit do not overlap each other and are parallel to each other when viewed from the one direction.
This irreversible circuit element comprises a conductor, a magnetic body, and an absorber. The conductor is provided with a first terminal and a second terminal, and has a first region that overlaps the magnetic body when viewed from the thickness direction and extends across the first terminal and the second terminal, and a second region that overlaps the absorber when viewed from the thickness direction. The conductor also has recesses and protrusions on the outer periphery when viewed from the thickness direction, and at least some of the recesses and protrusions are located in the second region.
An ultrasonic transducer array including a substrate, a membrane overlying the substrate, the membrane configured to allow movement at ultrasonic frequencies, and a plurality of anchors connected to the substrate and connected to the membrane. The membrane includes a piezoelectric layer, a plurality of first electrodes, and a plurality of second electrodes, wherein each ultrasonic transducer of a plurality of ultrasonic transducers includes at least a first electrode and at least a second electrode. The plurality of anchors includes a first anchor including a first electrical connection for electrically coupling at least one first electrode to control circuitry and a second anchor including a second electrical connection for electrically coupling at least one second electrode. The ultrasonic transducer array could be either a two-dimensional array or a one-dimensional array of ultrasonic transducers.
G06F 3/043 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using propagating acoustic waves
A61B 8/00 - Diagnosis using ultrasonic, sonic or infrasonic waves
B06B 1/02 - Processes or apparatus for generating mechanical vibrations of infrasonic, sonic or ultrasonic frequency making use of electrical energy
B06B 1/06 - Processes or apparatus for generating mechanical vibrations of infrasonic, sonic or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
A magnet temperature information output device includes a first element provided on a rotor, a second element provided on a stator, an electric resistance element, and an output section. The first element includes a temperature sensitive element and a first coil. In the temperature sensitive element, electric resistance changes responding to a temperature of the permanent magnet. The first coil is electrically connected to the temperature sensitive element. The second element includes a second coil. The second coil is arranged to be magnetically coupled to the first coil. The electric resistance element is electrically connected to the second element. The output section is electrically connected to the second element and the electric resistance element. The output section is arranged to output an electric signal responding to a magnitude of a voltage drop occurring in the electric resistance element as temperature information regarding the temperature of the permanent magnet.
A transmission device of the present disclosure is a transmission device that transmits a visible light signal to a receiving device, and includes a laser light source configured to emit visible light, and an optical modulator configured to change intensity of the visible light and generate a visible light signal, in which the optical modulator has an optical waveguide that serves as a transmission path for the visible light, and the optical waveguide is formed of a material containing lithium niobate.
A multilayer feedthrough capacitor includes an element body, a pair of first external electrodes, a second external electrode, and a plurality of internal electrodes. The plurality of internal electrodes include at least one first internal electrode connected to the pair of first external electrodes, at least one second internal electrode connected to the pair of first external electrodes, and at least one third internal electrode connected to the second external electrode. The at least one first internal electrode is connected to the pair of first external electrodes with a first connection width, and the at least one second internal electrode is connected to the pair of first external electrodes with a second connection width larger than the first connection width.
A magnetic sensor includes first to third structural bodies having a structure for a magnetic detection element to detect a target magnetic field at first to third positions away from a reference axis, respectively, and first to third detection circuits including first to third magnetic detection elements, respectively. The second position is a position rotated from the first position by (120+360×m)° circumferentially about the reference axis. The third position is a position rotated from the first position by (240+360×n)° circumferentially about the reference axis.
A retinal projection device includes: a switching unit capable of switching an optical path of a beam; a combiner that converts the beam into parallel light; and a notch filter that passes circularly polarized light with a first polarity in light of the red wavelength, passes circularly polarized light with the second polarity in light of the green wavelength, and passes circularly polarized light with the first polarity in light of the blue wavelength. The combiner includes: a first holographic diffraction layer that diffracts circularly polarized light with the first polarity in a first wavelength range including the red wavelength; a second holographic diffraction layer that diffracts circularly polarized light with the second polarity in a second wavelength range including the green wavelength; and a third holographic diffraction layer that diffracts circularly polarized light with the first polarity in a third wavelength range including the blue wavelength.
G02B 27/09 - Beam shaping, e.g. changing the cross-sectioned area, not otherwise provided for
G02B 27/28 - Optical systems or apparatus not provided for by any of the groups , for polarising
84.
SURFACE ROUGHNESS EVALUATION METHOD AND DEVICE THEREFOR, SURFACE ROUGHNESS EVALUATION PROGRAM, AND STORAGE MEDIUM STORING SURFACE ROUGHNESS EVALUATION PROGRAM
The present invention evaluates non-uniformity of roughness of a surface. The present disclosure involves: acquiring local histogram information indicating a relationship between an amount and frequency of surface irregularities for each local measurement region; generating multiple sets of cumulative histogram information by accumulating n pieces of local histogram information from the first local histogram information progressively; defining, as reference cumulative histogram information, cumulative histogram information generated by accumulating the maximum number of N pieces of local histogram information; detecting a degree of similarity of each cumulative histogram information to the reference cumulative histogram information; and using the smallest n, for which the detected degree of similarity is equal to or greater than a predetermined threshold value, as a part of an index indicating non-uniformity of surface roughness.
G01B 21/30 - Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring roughness or irregularity of surfaces
85.
IRREVERSIBLE CIRCUIT ELEMENT AND METHOD OF MANUFACTURING IRREVERSIBLE CIRCUIT ELEMENT
An irreversible circuit element includes: a housing; a plurality of irreversible circuit plates accommodated in the housing; and a plurality of terminals connected to an outer surface of the housing, the plurality of irreversible circuit plates are arranged such that the adjacent irreversible circuit plates face each other, each of the plurality of irreversible circuit plates includes a metal layer, a first insulating layer, a loss layer, and a first magnetic field applying layer laminated in sequence in a thickness direction, each of the plurality of irreversible circuit plates transmits a signal irreversibly between a first end and a second end, and the first end and the second end of each of the plurality of irreversible circuit plates are connected to different terminals of the plurality of terminals.
An environment in which a control device for controlling a controlled object can easily be verified. This verification system includes: a simulator for simulating an operating state of the controlled object; and a dummy device for generating a second signal relating to the controlled object instead of the simulator or the controlled object, in accordance with a first signal provided from a control device capable of controlling the controlled object, and providing the generated second signal to the control device or the simulator. The simulator generates a third signal indicating the simulated operating state of the controlled object on the basis of the second signal provided from the dummy device.
An electronic component includes a stack, a second inductor, and a shield conductor. The shield conductor includes a first conductor part provided on a side surface of the stack and a second conductor part provided on a side surface of the stack. A first end of a conductor layer of the second inductor is located at a position closer to the first conductor part. A second end of the conductor layer is located at a position closer to the second conductor part. Spacing between the first end and the first conductor part is greater than spacing between the second end and the second conductor part.
An electronic component includes a stack, a first inductor, a second inductor, a third inductor, and a shield conductor. The shield conductor includes a first conductor part provided on a side surface of the stack and a second conductor part provided on a side surface of the stack. The electronic component further includes a first connecting conductor that connects two columnar conductors of the first inductor and the first conductor part, a second connecting conductor that connects two columnar conductors of the second inductor and the second conductor part, and a third connecting conductor that connects two columnar conductors of the third inductor and the first conductor part.
A retinal projection device includes: a projector module including a laser module that emits laser light, a collimation lens that converts the laser light into a parallel beam, and a movable mirror that performs scanning by the beam; a projection lens that focuses the beam emitted from the projector module at a focusing position; an optical unit including a deflector, which changes a traveling direction of the beam, arranged so as to overlap the focusing position; an optical device that converts the beam into parallel light and irradiate a retina of a user with the parallel light; and a controller that adjusts the traveling direction of the beam by the deflector in accordance with a position of a pupil of the user.
Disclosed herein is a junction barrier Schottky diode that includes a semiconductor substrate, a drift layer provided on the semiconductor substrate, an anode electrode and a p-type semiconductor layer each contacting the drift layer, an n-type semiconductor layer contacting the anode electrode and the drift layer, a metal layer provided between the n-type semiconductor layer and the p-type semiconductor layer, and a cathode electrode contacting the semiconductor substrate.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
91.
FEATURE AMOUNT EVALUATION METHOD, DEVICE AND SYSTEM THEREFOR, FEATURE AMOUNT EVALUATION PROGRAM, AND STORAGE MEDIUM STORING FEATURE AMOUNT EVALUATION PROGRAM
This invention evaluates the non-uniformity of a feature amount. In the present disclosure: local histogram information indicating a relationship between a feature amount and a frequency is obtained for each local sample range; n pieces of local histogram information are accumulated, starting from the first piece, to generate a plurality of cumulative histogram information pieces; the accumulated and generated cumulative histogram information pieces, with N being the maximum number, are used as reference cumulative histogram information; the degree of similarity to the reference cumulative histogram information of each piece of cumulative histogram information is detected; and a minimum n at which the detected degree of similarity is at least a predetermined threshold is used as part of an index indicating the non-uniformity of the feature amount.
G01B 21/30 - Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring roughness or irregularity of surfaces
This soft magnetic alloy contains Fe, Co, and at least one selected from among M and X. M is at least one selected from among Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, and W. X is at least one selected from among Si, B, C and P. A volume ratio of a portion in which both the content of Fe and the total content of M and X fall within specific ranges have a specific relationship with a volume ratio of a portion in which both the content of Co and the total content of M and X fall within specific ranges
When straight lines that are parallel to first to fourth long axes A1 to A4, that have the origin as their ends, and that pass through the first to fourth quadrants are defined as first to fourth imaginary lines B1 to B4, and the angles that the first to fourth imaginary lines make counterclockwise with respect to the boundary line between the first and fourth quadrants are θ1 to θ4, respectively, θ1 is greater than or equal to 0 degrees and less than or equal to 90 degrees, θ2 is greater than or equal to 90 degrees and less than or equal to 180 degrees, θ3 is greater than or equal to 180 degrees and less than or equal to 270 degrees, and θ4 is greater than or equal to 270 degrees and less than or equal to 360 degrees.
G01B 7/30 - Measuring arrangements characterised by the use of electric or magnetic techniques for measuring angles or tapersMeasuring arrangements characterised by the use of electric or magnetic techniques for testing the alignment of axes
G01D 5/14 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
G01D 5/16 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying resistance
Disclosed herein is an antenna device that includes a magnetic body having a through hole, and a coil pattern including a first winding part and a second winding part overlapping the through hole of the magnetic body. The through hole of the magnetic body includes first and third inner peripheral edges each including a section extending in a first direction and positioned opposite to each other and second and fourth inner peripheral edges each including a section extending in a second direction perpendicular to the first direction and positioned opposite to each other. The second winding part includes an inner peripheral side part wound along the first to fourth inner peripheral edges and an outer peripheral side part positioned outside the inner peripheral side part and wound along the second to fourth inner peripheral edges without being along the first inner peripheral edge.
H01Q 7/00 - Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
G06K 19/07 - Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards with integrated circuit chips
G06K 19/077 - Constructional details, e.g. mounting of circuits in the carrier
A multilayer coil component includes an element body, a coil in the element body, a connection conductor in the element body, and an external electrode on the element body. The element body includes a principal surface arranged to constitute a mounting surface and an end surface positioned adjacent to the principal surface. The connection conductor includes one end connected to the coil and another end connected to the external electrode. The external electrode includes a sintered metal layer formed on the element body and a conductive resin layer formed on the sintered metal layer. The sintered metal layer includes a portion on the principal surface and a portion on the end surface. The portion on the principal surface has an average thickness smaller than an average thickness of the portion on the end surface.
An electronic component includes an element body and an external electrode disposed on the element body. The external electrode includes a conductive resin layer. The conductive resin layer includes a silver. The electronic component includes an oxide disposed in front of an end edge of the conductive resin layer. The oxide is in contact with the element body.
A laser module includes: a first laser element having a first emission port that emits first laser light; and a second laser element having a second emission port that emits second laser light. The first laser element and the second laser element are disposed such that the first laser light and the second laser light overlap each other.
In a power conversion device, a control circuit sets an output voltage of a boost converter to a first output voltage level or a second output voltage level in accordance with a voltage corresponding to the input voltage, causes an electric current resonant converter to operate in a full-bridge mode as an operating mode when the first output voltage level has been set, and causes the electric current resonant converter to operate in a half-bridge mode as an operating mode when the second output voltage level has been set. The first output voltage level or the second output voltage level is set at a predetermined timing after the input voltage is input and a set operating mode is maintained until a process of setting the first output voltage level or the second output voltage level is reset.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 1/42 - Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
H02M 3/00 - Conversion of DC power input into DC power output
99.
THIN FILM CAPACITOR, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC CIRCUIT BOARD HAVING THE THIN FILM CAPACITOR
To provide a thin film capacitor having a large capacitance. A thin film capacitor includes a metal foil having roughened main surfaces, a dielectric film covering the main surfaces, an electrode layer contacting the metal foil through an opening formed in the dielectric film and having a surface formed as a metal terminal, an electrode layer contacting the dielectric film without contacting the metal foil and having a surface formed as a metal terminal, and an electrode layer contacting the dielectric film without contacting the metal foil. The electrode layers include a conductive polymer layer contacting the dielectric film.
A magnetic sensor includes a first insulating layer, a second insulating layer, a third insulating layer, a lower coil element located on an opposite side of the first insulating layer from the second insulating layer, and a second MR element. The second MR element includes a magnetization pinned layer and a free layer. The magnetization pinned layer and the free layer are located on an opposite side of the third insulating layer from the second insulating layer. The first and third insulating layers each contain a first insulating material. The second insulating layer contains a second insulating material.
