Provided are a thin film transistor and a method for manufacturing the same, and more particularly, to a thin film transistor having improved characteristics and a method for manufacturing the same. A thin film transistor in accordance with an exemplary embodiment includes a gate electrode, an active layer containing oxide of a first metal element and disposed to be vertically spaced apart from the gate electrode, source and drain electrodes disposed to be spaced apart from each other on the active layer, and a contact layer disposed between the active layer and the source and drain electrodes.
The present invention provides an electric/electronic device comprising: a substrate; a thin film layer formed on the substrate; and a first encapsulation layer formed on the thin film layer, wherein the first encapsulation layer covers a portion of the lower surface of the substrate, the upper surface of the substrate, and the side surface of the substrate. The present invention aims at providing an electric/electronic device, a method for manufacturing same, and a substrate processing apparatus for forming same, in which, by forming an encapsulation layer, the electric/electronic device having the effect of blocking moisture or oxygen introduced from the outside through the upper surface, side surface, and lower surface of the electric/electronic device.
The present invention relates to a thin film forming method, and a transistor and a capacitor which are manufactured using same and, more specifically, to a thin film forming method for forming a metal oxide thin film, and a transistor and a capacitor which are manufactured using same. The thin film forming method according to an embodiment of the present invention is a thin film forming method for forming a thin film on a substrate provided in a reaction space, by using an atomic layer deposition process in which a step of supplying a raw material gas and a step of supplying a reaction gas are sequentially performed, the method including a step of forming a dielectric layer containing a metal by performing a step of supplying a hydrogen-containing gas after at least one of the step of supplying the raw material gas and the step of supplying the reaction gas, wherein the step of supplying the hydrogen-containing gas includes a step of applying power to the reaction space.
The present invention relates to a substrate processing apparatus and a substrate processing method, the substrate processing apparatus comprising: a chamber in which a processing process for a substrate is performed; a substrate support unit that supports the substrate inside the chamber; an acquisition unit that acquires data by detecting a state of the substrate; and a control unit that determines state information of the substrate by using the data acquired by the acquisition unit, wherein the state information includes at least one of a damage state of the substrate and an unloadable state of the substrate.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/66 - Testing or measuring during manufacture or treatment
An embodiment of the present invention provides a method for forming a gallium nitride thin film on one or more substrates, arranged in an inner space of a chamber in which a gas spray unit is installed, by using the gas spray unit. The gas spray unit comprises: a first electrode provided with a base electrode and a protruding electrode that extends and protrudes below the base electrode; and a second electrode separately disposed below the protruding electrode, wherein the protruding electrode passes through a hole formed in the second electrode, a first gas flow path is formed inside the protruding electrode, and a second gas flow path is formed inside the first electrode so that gas can be sprayed above the second electrode. The method may comprise the steps of: using the first gas flow path to spray a gallium-containing source gas toward the one or more substrates; and using the second gas flow path to spray a nitrogen-containing reactant gas toward the substrates and using the potential difference between the first electrode and the second electrode to generate a hydrogen plasma and thereby form the gallium nitride thin film. Therefore, according to embodiments of the present invention, a gallium nitride thin film and a silicon carbide thin film that have high densities can be formed at low temperatures.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
The present invention relates to a method for manufacturing a solar cell on a glass substrate and provides a method for manufacturing a solar cell, the method comprising the steps of: forming a reflective layer on one surface of the glass substrate; and forming an electron transport layer or a hole transport layer on the reflective layer, wherein the reflective layer is formed by a deposition method.
H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
H10K 30/15 - Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
H10K 85/50 - Organic perovskitesHybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
7.
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
The present invention relates to a substrate processing apparatus and a substrate processing method. This substrate processing apparatus comprises: a chamber; a susceptor on which at least three substrates are placed; and a gas injection unit that injects gas toward the plurality of substrates, wherein the gas injection unit comprises: a first injection unit that injects a source gas; a second injection unit that injects a reactant gas; a third injection unit that injects a surface treatment gas; and a plasma electrode that forms plasma in at least one of the first injection unit, the second injection unit, and the third injection unit.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/52 - Controlling or regulating the coating process
The present inventive concept provides a method of forming a dielectric film comprising a step of supplying a first source gas; a step of supplying a first purge gas; a step of supplying a first reaction gas; and a step of supplying a second purge gas, wherein the step of supplying the first source gas comprises supplying a compound containing at least one metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr) into a vacuum deposition apparatus, and wherein the step of supplying the first reaction gas comprises supplying a compound selected from the group consisting of O3 and H2O into the vacuum deposition apparatus.
34254 4 (where R1 includes a metal selected from the group consisting of Pb, Sn, Ge, Sb, Bi, and Ba), and iii) at least one hydrogen halide selected from the group consisting of HI, HBr, Hf, and HCl.
H10K 30/84 - Layers having high charge carrier mobility
H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
H10K 71/60 - Forming conductive regions or layers, e.g. electrodes
10.
METHOD FOR FORMING GRAPHENE ELECTRODE AND METHOD FOR MANUFACTURING SOLAR CELL USING SAME
The present invention provides a method for forming a graphene electrode, the method comprising: a step for supplying a silicon-containing gas onto a substrate; a step for supplying a carbon-containing gas onto the substrate; and a step for forming hydrogen plasma on the substrate. The present invention also provides a method for manufacturing a solar cell using the graphene electrode.
H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
Semiconductor processing machines; low pressure chemical vapor deposition machines; plasma chemical vapor deposition machines; plasma enhanced chemical vapor deposition machines; metal organic chemical vapor deposition machines; deposition machines used for manufacturing semiconductor; etching machines used for manufacturing semiconductor; deposition machines used for manufacturing solar cells; etching machines used for manufacturing solar cells; deposition machines used for manufacturing light emitting diode (LED); etching machines used for manufacturing light emitting diode (LED); deposition machines used for manufacturing Organic Light Emitting Diodes (OLED); etching machines used for manufacturing Organic Light Emitting Diodes (OLED); deposition machines used for manufacturing Flat Panel Display; etching machines used for manufacturing Flat Panel Display; atomic layer deposition (ALD) machines used for manufacturing semiconductor; atomic layer deposition (ALD) machines used for manufacturing solar cells; atomic layer deposition (ALD) machines used for manufacturing light emitting diode (LED); atomic layer deposition (ALD) machines used for manufacturing Organic Light Emitting Diodes (OLED); atomic layer deposition (ALD) machines used for manufacturing Flat Panel Display
A method for forming a silicon carbide film on a substrate accommodated in a chamber according to an embodiment of the present invention may include the steps of: injecting a silicon (Si)-containing gas into the chamber; forming an amorphous silicon carbide film on the substrate by forming first hydrogen plasma in the chamber while injecting a carbon (C)-containing gas into the chamber; and crystallizing the amorphous silicon carbide film by forming second hydrogen plasma in the chamber. Therefore, according to embodiments of the present invention, a crystalline silicon carbide film can be formed at a low temperature. That is, a crystalline silicon carbide film having few or no defects can be formed.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/507 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
The present invention relates to a load lock chamber, a substrate processing system, and a substrate processing method, wherein the load lock chamber comprises: a chamber body connected to a substrate storage unit for storing substrates and a transfer chamber for transferring the substrates; a first gate valve provided between the substrate storage unit and the chamber body; a second gate valve provided between the chamber body and the transfer chamber; and an ion spray unit for spraying ions to the substrates.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present invention relates to a substrate processing method and, more specifically, to a substrate processing method for growing a thin film on a substrate. The substrate processing method according to an embodiment of the present invention includes: a preparation step of preparing a substrate in a reaction space; a cleaning step of exposing the substrate to first plasma; a thin film forming step of forming a thin film on the substrate; and an etching step of exposing, to second plasma, the substrate on which the thin film is formed.
The present invention relates to a substrate processing method, a substrate processing apparatus, and a semiconductor device and, more specifically, to a substrate processing method for depositing a thin film on a substrate having through-holes formed therein, a substrate processing apparatus, and a semiconductor device. A substrate processing method according to an embodiment of the present invention includes the steps of: preparing a substrate having a semiconductor device region and a dummy region, wherein through-holes are formed in each of the semiconductor device region and the dummy region; and forming thin films on both surfaces of the substrate including all or part of the semiconductor device region and part of the dummy region.
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
H01L 21/288 - Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 23/58 - Structural electrical arrangements for semiconductor devices not otherwise provided for
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C23C 16/04 - Coating on selected surface areas, e.g. using masks
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Provided is a substrate processing apparatus. The positions of a first electrode and a second electrode are adjusted in advance in consideration of differences in coefficients of thermal expansion so that a short circuit created by contact between the first electrode and the second electrode is prevented even in the case in which the first electrode and the second electrode are thermally expanded during processing. Even in the case in which the first electrode and the second electrode are thermally expanded due to an increase in temperature during processing, a short circuit between the first electrode and the second electrode can be prevented, and the uniformity of a thin film can be maintained in the substrate processing apparatus for processing a large substrate.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
17.
SUBSTRATE PROCESSING APPARATUS AND INTERLOCK METHOD THEREOF
Disclosed herein are a substrate processing apparatus and an interlock method thereof, which can generate an interlock signal, when the temperature of each upper or lower electrode in a process chamber exceeds a range set by a user, thereby cutting off application of RF power to the substrate processing apparatus. According to the substrate processing apparatus and the interlock method thereof, in an emergency where the temperatures of the upper and lower electrodes, a difference therebetween, an inter-electrode distance, and the resistance value of each electrode are out of the respective ranges set by the user, an interlock signal and an alarm signal can be generated to cut off the application of RF power to the substrate processing apparatus. Thus, it is possible to protect equipment by preventing the equipment from being damaged by RF power and to maintain the uniformity of a thin film deposited on a substrate.
The present inventive concept relates to a method for treatment of a substrate having an insulating layer and an electrode layer formed thereon, the method comprising: a plasma treatment step of treating the substrate with plasma by using treatment gas containing fluorine (F); a selective adsorption step of spraying the substrate, subjected to the plasma treatment step, with source gas containing a high-k material to adsorb the high-k material only on the electrode layer; and a selective deposition step of spraying the substrate, subjected to the selective adsorption step, with reaction gas to deposit a high-k layer only on the electrode layer.
The present invention provides a thin film forming method and a manufacturing method for an electroluminescent display device using same, a method for forming a thin film on a substrate having a first sub-pixel area and a second sub-pixel area, the method including a step of forming a first light emitting layer in the first sub-pixel area, wherein the step of forming of a first light emitting layer in the first sub-pixel area includes forming of a semiconductor layer containing gallium (Ga) in the first sub-pixel area.
The present invention relates to a canister and a substrate treatment apparatus, the canister comprising: a canister body for storing a source material; an inlet part for introducing carrier gas, supplied from an injection part, into the canister body; and an outlet part for discharging the source material, stored in the canister body, to the outside, wherein the inlet part has one end through which the carrier gas is supplied into the canister body and the other end which is connected to the injection part, and the one end of the inlet part is disposed at a position spaced upward from the top of the source material stored in the canister body, so as to supply the carrier gas toward the top of the source material.
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
B01F 27/96 - Mixers with rotary stirring devices in fixed receptaclesKneaders with stirrers rotating about a substantially vertical axis with openwork frames or cages
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
21.
SUBSTRATE PROCESSING APPARATUS, AND EDGE FRAME OF SUBSTRATE PROCESSING APPARATUS
The present invention relates to a substrate processing apparatus, and an edge frame of the substrate processing apparatus, the substrate processing apparatus comprising: a chamber; a substrate support unit which is arranged inside the chamber and which is for supporting a substrate; an edge frame arranged on the substrate and the substrate support unit; and a step adjustment unit having a first interval between the substrate and the lower part of the edge frame.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
The present inventive concept provides a solar cell and a method for manufacturing the solar cell. The solar cell comprises a solar cell layer on a substrate and an encapsulation layer provided on the solar cell layer. The encapsulation layer comprises a metal oxide doped with a dopant material or a metal oxynitride doped with a dopant material; and the metal oxide or the metal oxynitride comprises at least one metal selected from the group consisting of W, Nb, and Sn.
A substrate processing apparatus according to an embodiment of the present invention comprises: a chamber for providing a processing space in which a substrate is processed; a gas supply unit for supplying gas to the substrate inside the chamber; a source material transfer line connected to the gas supply unit; and a storage container for supplying a SAM source material to the chamber through the source material transfer line.
H10K 30/82 - Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
H10K 30/15 - Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
H10K 85/50 - Organic perovskitesHybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
H10K 30/86 - Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
H10K 30/85 - Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
H10K 39/15 - Organic photovoltaic [PV] modulesArrays of single organic PV cells comprising both organic PV cells and inorganic PV cells
The present invention provides a method for cleaning a chamber for forming a perovskite compound, the chamber cleaning method comprising the steps of: exposing the inside of the chamber to a hydrogen (H)-containing gas plasma; and exposing the inside of the chamber to an oxygen (O)-containing gas plasma, wherein the step of exposing the inside of the chamber to an oxygen (O)-containing gas plasma is performed after the step of exposing the inside of the chamber to a hydrogen (H)-containing gas plasma.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present inventive concept relates to a thin film manufacturing method and a thin film. The thin film manufacturing method comprises: an adsorption step of adsorbing a high-k material on a substrate by spraying a source gas consisting of a high-k material; a deposition step of depositing a thin film consisting of the high-k material on the substrate by spraying a reaction gas that reacts with the source gas; and a crystallization step of crystallizing the high-k material using plasma.
The present inventive concept relates to an apparatus for processing a substrate, the apparatus comprising: a chamber which includes a lid on top; a first plate which is installed under the lid and in which a plurality of gas holes is formed; a second plate coupled to the first plate and including a plurality of gas holes that communicate with some of the plurality of gas holes of the first plate; and a distance adjustment part which is connected to the second plate, adjusts the distance between the lid and the first plate, and is connected to an RF power feeding line.
A substrate processing device. The device comprises: a first source supply unit; a second source supply unit; a first supply line for connecting the first source supply unit to a spraying unit; a second supply line for connecting the second source supply unit to the spraying unit; a mixing unit provided at the first supply line to be arranged between the first source supply unit and the spraying unit; a first connection line for connecting the second supply line to the first supply line and/or the mixing unit; and a first path change unit provided at a first connection point at which the first connection line is connected to the second supply line, wherein the first path change unit changes the flow path of a second source gas supplied from the second source supply unit.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/52 - Controlling or regulating the coating process
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
The present invention relates to a method for forming a thin film on a substrate, the method comprising the steps of: preparing a substrate on which one or two or more films among a metal film, a metal oxide film, a silicon nitride (SiN) film, and a silicon oxide (SiO) film are formed; spraying a gallium (Ga)-containing source gas onto the substrate; and spraying a nitrogen (N)-containing reactant gas onto the substrate and forming a gallium nitride (GaN) film on the substrate at a temperature of 300-600°C.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
37 - Construction and mining; installation and repair services
Goods & Services
Information or enquiries on business and marketing; business administration and office work; business operation, business administration and office functions; business management and transaction of office functions; intellectual property management and office work; information, advisory and consultancy services relating to business and management or business administration, including such services provided on line or via the internet; business management consultancy and advisory services; consultancy and advisory services in the field of business strategy; commercial administration of the licensing of the goods and services of others; business marketing consulting services Semiconductor processing machines; low pressure chemical vapor deposition machines; plasma chemical vapor deposition machines; plasma enhanced chemical vapor deposition machines; metal organic chemical vapor deposition machines; deposition machines used for manufacturing semiconductor; etching machines used for manufacturing semiconductor; deposition machines used for manufacturing solar cells; etching machines used for manufacturing solar cells; deposition machines used for manufacturing light emitting diode (LED); etching machines used for manufacturing light emitting diode (LED); deposition machines used for manufacturing Organic Light Emitting Diodes (OLED); etching machines used for manufacturing Organic Light Emitting Diodes (OLED); deposition machines used for manufacturing Flat Panel Display; etching machines used for manufacturing Flat Panel Display; atomic layer deposition (ALD) machines used for manufacturing semiconductor; atomic layer deposition (ALD) machines used for manufacturing solar cells; atomic layer deposition (ALD) machines used for manufacturing light emitting diode (LED); atomic layer deposition (ALD) machines used for manufacturing Organic Light Emitting Diodes (OLED); atomic layer deposition (ALD) machines used for manufacturing Flat Panel Display LCD illumination; LED luminaires; LED lanterns; LED lamps; LED sensor lights; LED desk lamps; LED bulbs; LED lighting equipment; LED halogen lamps; OLED lighting device; PLS lighting device; electric lanterns; electric lamps; electric luminaires; electric lighting apparatus; lighting fixtures; stands for lights; solar cell lighting apparatus; solar powered LED lights; solar powered lamps Installation of atomic layer deposition(ALD) machines used for manufacturing light emitting diode(LED); maintenance of atomic layer deposition(ALD) machines used for manufacturing light emitting diode(LED); repair of atomic layer deposition(ALD) machines used for manufacturing light emitting diode(LED); installation of deposition machines used for manufacturing light emitting diode(LED); repair of deposition machines used for manufacturing light emitting diode(LED); maintenance of deposition machines used for manufacturing light emitting diode(LED); maintenance of deposition machines used for manufacturing Organic Light Emitting Diodes(OLED); installation of atomic layer deposition(ALD) machines used for manufacturing Organic Light Emitting Diodes(OLED); maintenance of atomic layer deposition(ALD) machines used for manufacturing Organic Light Emitting Diodes(OLED); repair of deposition machines used for manufacturing Organic Light Emitting Diodes(OLED); repair of atomic layer deposition(ALD) machines used for manufacturing Organic Light Emitting Diodes(OLED); installation of deposition machines used for manufacturing Organic Light Emitting Diodes(OLED); installation of metal organic chemical vapor deposition machines; repair of metal organic chemical vapor deposition machines; maintenance of metal organic chemical vapor deposition machines; repair of atomic layer deposition(ALD) machines used for manufacturing semiconductor; maintenance of deposition machines used for manufacturing semiconductor; installation of atomic layer deposition(ALD) machines used for manufacturing semiconductor; maintenance of atomic layer deposition(ALD) machines used for manufacturing semiconductor; installation of deposition machines used for manufacturing semiconductor; repair of deposition machines used for manufacturing semiconductor; installation of low pressure chemical vapor deposition machines; repair of low pressure chemical vapor deposition machines; maintenance of low pressure chemical vapor deposition machines; installation of atomic layer deposition(ALD) machines used for manufacturing solar cells; maintenance of deposition machines used for manufacturing solar cells; maintenance of atomic layer deposition(ALD) machines used for manufacturing solar cells; repair of atomic layer deposition(ALD) machines used for manufacturing solar cells; installation of deposition machines used for manufacturing solar cells; repair of deposition machines used for manufacturing solar cells; installation of atomic layer deposition(ALD) machines used for manufacturing Flat Panel Display; maintenance of atomic layer deposition(ALD) machines used for manufacturing Flat Panel Display; maintenance of deposition machines used for manufacturing Flat Panel Display; repair of atomic layer deposition(ALD) machines used for manufacturing Flat Panel Display; installation of deposition machines used for manufacturing Flat Panel Display; repair of deposition machines used for manufacturing Flat Panel Display; maintenance of plasma enhanced chemical vapor deposition machines; installation of plasma enhanced chemical vapor deposition machines; repair of plasma enhanced chemical vapor deposition machines; installation of plasma chemical vapor deposition machines; repair of plasma chemical vapor deposition machines; maintenance of plasma chemical vapor deposition machines
40 - Treatment of materials; recycling, air and water treatment,
09 - Scientific and electric apparatus and instruments
11 - Environmental control apparatus
37 - Construction and mining; installation and repair services
Goods & Services
Information or enquiries on business and marketing; business administration and office work; business operation, business administration and office functions; business management and transaction of office functions; intellectual property management and office work; information, advisory and consultancy services relating to business and management or business administration, including such services provided on line or via the internet; business management consultancy and advisory services; consultancy and advisory services in the field of business strategy; commercial administration of the licensing of the goods and services of others; business marketing consulting services; retail or wholesale services relating to sale of semiconductors; retail or wholesale services relating to sale of semiconductor elements; retail or wholesale services relating to sale of semiconductor devices and equipment; retail or wholesale services relating to sale of solar cells; retail or wholesale services relating to sale of LED; retail or wholesale services relating to sale of OLED; retail or wholesale services relating to sale of substrates used for manufacturing semiconductors, solar cells, LED or OLED Semiconductor processing machines; low pressure chemical vapor deposition machines; plasma chemical vapor deposition machines; plasma enhanced chemical vapor deposition machines; metal organic chemical vapor deposition machines; deposition machines used for manufacturing semiconductor; etching machines used for manufacturing semiconductor; deposition machines used for manufacturing solar cells; etching machines used for manufacturing solar cells; deposition machines used for manufacturing light emitting diode (LED); etching machines used for manufacturing light emitting diode (LED); deposition machines used for manufacturing Organic Light Emitting Diodes (OLED); etching machines used for manufacturing Organic Light Emitting Diodes (OLED); deposition machines used for manufacturing Flat Panel Display; etching machines used for manufacturing Flat Panel Display; atomic layer deposition (ALD) machines used for manufacturing semiconductor; atomic layer deposition (ALD) machines used for manufacturing solar cells; atomic layer deposition (ALD) machines used for manufacturing light emitting diode (LED); atomic layer deposition (ALD) machines used for manufacturing Organic Light Emitting Diodes (OLED); atomic layer deposition (ALD) machines used for manufacturing Flat Panel Display Processing of semiconductors; processing of semiconductor elements; processing of semiconductor wafers; wafer fabricating of semiconductor devices; processing of semiconductor equipment and parts; processing of parts for semiconductor manufacturing; processing of substrates for semiconductor manufacturing; processing of substrates for solar cell manufacturing; processing of substrates for LED manufacturing; processing of substrates for OLED manufacturing Semiconductor elements; semiconductor devices; semiconductor component; optical semiconductors; structured semiconductor wafers; semiconductors; solar cells; solar cell plates; solar cell panels; solar panel arrays LCD illumination; LED luminaires; LED lanterns; LED lamps; LED sensor lights; LED desk lamps; LED bulbs; LED lighting equipment; LED halogen lamps; OLED lighting device; PLS lighting device; electric lanterns; electric lamps; electric luminaires; electric lighting apparatus; lighting fixtures; stands for lights; solar cell lighting apparatus; solar powered LED lights; solar powered lamps Installation of atomic layer deposition(ALD) machines used for manufacturing light emitting diode(LED); maintenance of atomic layer deposition(ALD) machines used for manufacturing light emitting diode(LED); repair of atomic layer deposition(ALD) machines used for manufacturing light emitting diode(LED); installation of deposition machines used for manufacturing light emitting diode(LED); repair of deposition machines used for manufacturing light emitting diode(LED); maintenance of deposition machines used for manufacturing light emitting diode(LED); maintenance of deposition machines used for manufacturing Organic Light Emitting Diodes(OLED); installation of atomic layer deposition(ALD) machines used for manufacturing Organic Light Emitting Diodes(OLED); maintenance of atomic layer deposition(ALD) machines used for manufacturing Organic Light Emitting Diodes(OLED); repair of deposition machines used for manufacturing Organic Light Emitting Diodes(OLED); repair of atomic layer deposition(ALD) machines used for manufacturing Organic Light Emitting Diodes(OLED); installation of deposition machines used for manufacturing Organic Light Emitting Diodes(OLED); installation of metal organic chemical vapor deposition machines; repair of metal organic chemical vapor deposition machines; maintenance of metal organic chemical vapor deposition machines; repair of atomic layer deposition(ALD) machines used for manufacturing semiconductor; maintenance of deposition machines used for manufacturing semiconductor; installation of atomic layer deposition(ALD) machines used for manufacturing semiconductor; maintenance of atomic layer deposition(ALD) machines used for manufacturing semiconductor; installation of deposition machines used for manufacturing semiconductor; repair of deposition machines used for manufacturing semiconductor; installation of low pressure chemical vapor deposition machines; repair of low pressure chemical vapor deposition machines; maintenance of low pressure chemical vapor deposition machines; installation of atomic layer deposition(ALD) machines used for manufacturing solar cells; maintenance of deposition machines used for manufacturing solar cells; maintenance of atomic layer deposition(ALD) machines used for manufacturing solar cells; repair of atomic layer deposition(ALD) machines used for manufacturing solar cells; installation of deposition machines used for manufacturing solar cells; repair of deposition machines used for manufacturing solar cells; installation of atomic layer deposition(ALD) machines used for manufacturing Flat Panel Display; maintenance of atomic layer deposition(ALD) machines used for manufacturing Flat Panel Display; maintenance of deposition machines used for manufacturing Flat Panel Display; repair of atomic layer deposition(ALD) machines used for manufacturing Flat Panel Display; installation of deposition machines used for manufacturing Flat Panel Display; repair of deposition machines used for manufacturing Flat Panel Display; maintenance of plasma enhanced chemical vapor deposition machines; installation of plasma enhanced chemical vapor deposition machines; repair of plasma enhanced chemical vapor deposition machines; installation of plasma chemical vapor deposition machines; repair of plasma chemical vapor deposition machines; maintenance of plasma chemical vapor deposition machines
The present inventive concept relates to a substrate processing apparatus comprising: a chamber; a substrate support part which supports at least one substrate in the chamber; a lower plate which is disposed above the substrate support part; and an upper plate which is disposed above the lower plate, wherein: the upper plate includes a first spray hole which provides a first gas and a second spray hole which provides a second gas; and the lower plate includes a first opening which is disposed under the first spray hole so as to allow the first gas provided from the first spray hole to pass therethrough and a second opening which is disposed under the second spray hole so as to allow the second gas provided from the second spray hole to pass therethrough.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
The present invention relates to a substrate processing apparatus including: a chamber; a first electrode disposed on the chamber; a second electrode disposed under the first electrode, the second electrode including a plurality of openings; a plurality of protrusion electrodes extending from the first electrode to the plurality of openings of the second electrode; a substrate supporter being opposite to the second electrode and supporting a substrate; a first discharging region between a lower surface of the first electrode and an upper surface of the second electrode; a second discharging region between a side surface of the protrusion electrode and an opening inner surface of the second electrode; a third discharging region between a lower surface of the protrusion electrode and the opening inner surface of the second electrode; and a fourth discharging region between the second electrode and the substrate, wherein plasma is generated in at least one region of the first to fourth discharging regions.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
33.
SUBSTRATE PROCESSING DEVICE AND METHOD FOR CLEANING SUBSTRATE PROCESSING DEVICE
A substrate processing apparatus includes a chamber, a substrate support positioned inside the chamber and supporting a substrate, an edge frame disposed above the substrate support and extending outward from an edge of the substrate support, and a gas flow-controlling unit installed on a side wall of the chamber to be positioned between the side wall of the chamber and a side surface of the substrate support along a periphery of the substrate support. The gas flow-controlling unit includes a flow path provided in a region overlapping the edge frame. Thus, the gas may be prevented from flowing unevenly to the corners or regions other than the corners within the chamber. That is, the gas may be evenly distributed in the circumferential direction of the chamber. Accordingly, the cleaning defect may be prevented from occurring at the corners of the chamber and in regions other than the corners.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
An embodiment of the present invention relates to a method for forming a graphene film on a substrate in a chamber, wherein the method may comprise the steps of: spraying a silicon-containing gas on the substrate; spraying a carbon-containing gas on the substrate and forming argon plasma; and forming argon plasma on the substrate. Therefore, according to embodiments of the present invention, the graphene film can be easily formed by a deposition method. That is, a crystalline carbon-containing film can be easily formed. In addition, a graphene film having an increased carbon content can be formed, and a graphene film having a low impurity content can be formed. In addition, a graphene film having a dense film quality can be formed.
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/54 - Apparatus specially adapted for continuous coating
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
An embodiment of the present invention relates to a method for forming an amorphous carbon-containing film on a substrate accommodated in a chamber, the method comprising the steps of: injecting a silicon-containing source gas into the chamber; forming first plasma by supplying first RF power to the chamber while injecting carbon and a plasma-forming gas into the chamber; and forming second plasma by supplying second RF power to the chamber while injecting a plasma-forming gas into the chamber, wherein the first RF power may be greater than the second RF power. Therefore, according to embodiments of the present invention, the carbon-containing film can be easily formed by a deposition method. That is, an amorphous carbon-containing film can be easily formed by a deposition method. In addition, an amorphous carbon-containing film having an increased carbon content and a reduced impurity content can be formed. In addition, an amorphous carbon-containing film having dense film quality can be formed.
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
The present inventive concept provides a display device comprising: a first electrode provided on a substrate; a light-emitting
layer provided on the first electrode; a second electrode provided on the light-emitting layer; and an antireflective layer, which is
provided on the second electrode and comprises a light-absorbing material, wherein the light-absorbing material comprises at least
one selected from the group consisting of amorphous carbon (a-C), a polymer, a monomer, metal and graphite.
G02B 1/111 - Anti-reflection coatings using layers comprising organic materials
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
The present inventive concept comprises the steps of preparing a substrate on which a first conductive charge transport layer is formed; positioning a mask having an opening pattern on the substrate; and forming a perovskite layer on the substrate and the mask.
The present invention relates to a titanium nitride thin film forming method and a semiconductor device and, more specifically, to a titanium nitride thin film forming method for forming a titanium nitride thin film on a substrate and a semiconductor device. A titanium nitride thin film forming method according to an embodiment of the present invention comprises the steps of: preparing a substrate in a process space; supplying a raw material gas containing titanium onto the substrate; and supplying a reaction gas containing nitrogen gas and hydrogen gas onto the substrate, wherein the step of supplying a raw material gas and the step of supplying a reaction gas are sequentially performed, and plasma is formed in the process space when the reaction gas is supplied.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
The present invention relates to a method for forming an electrode including copper (Cu) and ruthenium (Ru) on a substrate, the method comprising the steps of: performing N cycles (N is a natural number) of ruthenium film formation using a ruthenium-containing precursor to form a ruthenium film; and performing M cycles (M is a natural number) of copper film formation using a copper-containing precursor to form a copper film on the ruthenium film.
H10N 97/00 - Electric solid-state thin-film or thick-film devices, not otherwise provided for
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
22) on the substrate; and (d) spraying a mixed gas comprising a hydrogen-containing gas and a nitrogen-containing gas onto the substrate, wherein the step (d) of spraying the mixed gas is performed continuously while the steps (a) to (c) are performed.
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/02 - Pretreatment of the material to be coated
Etching machines used for manufacturing light emitting diodes (LEDs); atomic layer deposition (ALD) machines used for manufacturing light emitting diodes (LEDs); deposition machines used for manufacturing light emitting diodes (LEDs); etching machines used for manufacturing organic light emitting diodes (OLEDs); atomic layer deposition (ALD) machines used for manufacturing organic light emitting diodes (OLEDs); deposition machines used for manufacturing organic light emitting diodes (OLEDs); metal organic chemical vapor deposition machines; etching machines used for manufacturing semiconductors; atomic layer deposition (ALD) machines used for manufacturing semiconductors; deposition machines used for manufacturing semiconductors; semiconductor processing machines; low pressure chemical vapor deposition machines; etching machines used for manufacturing solar cells; atomic layer deposition (ALD) machines used for manufacturing solar cells; deposition machines used for manufacturing solar cells; etching machines used for manufacturing flat panel displays; atomic layer deposition (ALD) machines used for manufacturing flat panel displays; deposition machines used for manufacturing flat panel displays; plasma enhanced chemical vapor deposition machines; plasma chemical vapor deposition machines
An embodiment of the present invention relates to a method for forming a gallium-containing film on a substrate on which at least one from among a metal film, a silicon (Si) film, a silicon oxide (SiO) film and a silicon nitride (SiN) film is formed. The method may comprise the steps of: preparing a substrate; spraying a gallium (Ga)-containing source gas at the substrate; and spraying a nitrogen (N)-containing reactant gas at the substrate so as to form a first gallium nitride (GaN) film on the silicon film and/or silicon nitride film of the substrate. Therefore, according to embodiments of the present invention, a gallium nitride film or a gallium oxide film can be easily formed. That is, a gallium nitride film or a gallium oxide film can be grown in one direction on a silicon (Si) substrate. Thus, a gallium nitride film or a gallium oxide film in which defect generation is suppressed can be formed such that characteristics of a semiconductor device to which the gallium nitride film or the gallium oxide film is applied are improved.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
43.
ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME
The present invention provides an organic light-emitting display device comprising: a substrate; an anode provided on the substrate; an organic light-emitting layer provided on the anode; a cathode provided on the organic light-emitting layer; and an auxiliary electrode layer provided on the cathode, wherein the auxiliary electrode layer comprises: a first layer provided on the cathode; a second layer provided on the first layer; and a third layer provided on the second layer.
A method for forming an electrode of a semiconductor device, according to an embodiment of the present invention, includes the steps of: performing n times a ruthenium layer formation cycle including a step of spraying a ruthenium-containing precursor, to form a ruthenium layer on a substrate; and performing m times a metal layer formation cycle including a step of spraying a metal-containing precursor, to form a metal layer on the ruthenium layer, wherein the ruthenium layer formation cycle and the metal layer formation cycle are sequentially performed or the ruthenium layer formation cycle and the metal layer formation cycle are sequentially repeated two or more times. Therefore, according to embodiments of the present invention, in forming an electrode including a ruthenium layer and a copper layer, adhesion between the ruthenium layer and the copper layer can be improved. Accordingly, delamination or separation of the copper layer from the ruthenium layer can be suppressed or prevented. Accordingly, the specific resistance of the electrode can be lowered, and electrical conductivity can be improved.
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
H10N 97/00 - Electric solid-state thin-film or thick-film devices, not otherwise provided for
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
45.
TANDEM SOLAR CELL AND MANUFACTURING METHOD THEREFOR
The present inventive concept relates to a method of manufacturing a tandem solar cell, the method including: a step of preparing a perovskite solar cell, including a first conductive charge transporting layer, a light absorption layer, and a second conductive charge transporting layer, on a substrate; a step of forming a partition part in the perovskite solar cell to form a first perovskite unit solar cell and a second perovskite unit solar cell; a step of forming a contact part in the first perovskite unit solar cell to expose a certain region of the first perovskite unit solar cell; a step of forming a buffer layer in a top surface of each of the first perovskite unit solar cell and the second perovskite unit solar cell; a step of preparing a plurality of second solar cells; a step of bonding the plurality of second solar cells to the buffer layer to form a first unit tandem solar cell where the first perovskite unit solar cell, the buffer layer, and the second solar cell are sequentially stacked and a second unit tandem solar cell where the second perovskite unit solar cell, the buffer layer, and the second solar cell are sequentially stacked; and a step of electrically connecting the first unit tandem solar cell to the second unit tandem solar cell.
The present invention relates to a substrate processing apparatus comprising: a chamber; a substrate support part for supporting a substrate in the interior of the chamber; a spray part for spraying gas toward the substrate support part; an exhaust part for exhausting gas from the interior of the chamber, wherein the exhaust part comprises one or more exhaust lines connected to the chamber and a plurality of exhaust pumps connected to the exhaust lines, and the number of the exhaust pumps connected in parallel is multiples of 2n (n is a natural number).
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present invention provides a method for forming a gallium oxynitride (GaON) layer on a substrate, the method for forming a gallium oxynitride layer comprising the steps of: spraying a source material containing gallium (Ga); forming a gallium nitride layer by spraying a first reactant material containing nitrogen; and spraying a second reactant material containing oxygen onto the gallium nitride layer.
The present invention relates to a solar cell and a method for forming same and, more specifically, to a solar cell having a charge transport layer formed by a deposition process and a method for forming same. A solar cell according to an embodiment of the present invention comprises: a substrate; a first charge transport layer provided on the substrate; a light absorption layer provided on the first charge transport layer; a second charge transport layer provided on the light absorption layer; and an electrode layer provided on the second charge transport layer, wherein at least one of the first charge transport layer or the second charge transport layer is formed using an oxygen-containing gas and a nitrogen-containing gas.
A capacitively coupled plasma substrate processing device according to an embodiment of the present invention includes: a chamber including a substrate holder on which a substrate is mounted; an upper electrode disposed on an upper portion of the chamber to spray gas and generate capacitively coupled plasma; RF rods for supplying RF power to the upper electrode at a plurality of positions; a power distribution unit for distributing the power RF to the RF rods; and an RF power source for supplying the RF power to the power distribution unit.
The present invention provides a method for manufacturing a gallium oxide layer, by which a gallium oxide (GaO) layer is formed on a substrate, the method comprising: a step of forming a first GaO layer; and a step of forming a second GaO layer on the first GaO layer, wherein the step of forming any one GaO layer of the first GaO layer and the second GaO layer uses an atomic layer deposition (ALD) method, and the step of forming the other GaO layer uses a chemical vapor deposition (CVD) method.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 28/04 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of inorganic non-metallic material
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
The present disclosure relates to a thin film forming method, and more particularly, to a thin film forming method for forming a gallium nitride thin film.
The present disclosure relates to a thin film forming method, and more particularly, to a thin film forming method for forming a gallium nitride thin film.
In accordance with an exemplary embodiment, a thin film forming method includes: loading a substrate into a process space of a chamber; and forming a gallium nitride thin film on the substrate, and the forming of the gallium nitride thin film includes: supplying a source gas containing gallium onto the substrate; supplying a reactant gas containing nitrogen onto the substrate; and activating and supplying a post-treatment gas containing hydrogen onto the substrate.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C 16/52 - Controlling or regulating the coating process
A semiconductor device according to an embodiment of the present invention includes an electrode formed on a substrate and including a noble metal-containing layer, a dielectric layer formed on one surface of the noble metal-containing layer, and a capping layer formed between the noble metal-containing layer and the dielectric layer and containing titanium (Ti). Therefore, according to embodiments of the present invention, it is possible to suppress or prevent occurrence of defects at an interface between the electrode and the dielectric layer. Accordingly, a reduction in the dielectric constant of the dielectric layer may be suppressed or prevented, and the dielectric constant of the dielectric layer may be uniform. Further, the bonding force of the dielectric layer may be enhanced.
A method for forming a titanium nitride thin film according to an embodiment of the present invention comprises the steps of: preparing a substrate; forming a titanium (Ti)-containing layer by spraying a precursor containing titanium (Ti) toward the substrate; and forming a titanium nitride thin film by spraying a reactant gas containing nitrogen (N) toward the substrate, wherein the precursor containing titanium (Ti) does not contain chlorine (Cl). Therefore, according to embodiments of the present invention, a titanium nitride thin film from which impurities are removed can be formed. Accordingly, the resistivity of the titanium nitride thin film can be lowered, and the electrical characteristics thereof can be improved.
Provided is a method for cleaning a substrate processing apparatus. The method includes loading a substrate into a chamber, injecting a gas containing at least one of Zn, Ga, In, or Sn into the chamber to deposit a thin film on the substrate, unloading the substrate to the outside of the chamber, injecting a cleaning gas containing Br into the chamber, and exhausting byproducts generated through a reaction between impurities deposited inside the chamber in addition to the substrate and the cleaning gas in the depositing of the thin film. Therefore, the inside of the apparatus may be cleaned at relatively low temperature. That is, impurities having the form of the thin film, which are deposited on a surface of a component or structure installed inside the apparatus may be delaminated from the surface.
Disclosed are a substrate processing apparatus, a temperature measurement method and a temperature control method. The substrate processing apparatus includes a chamber, a susceptor configured such that a substrate is placeable thereon, a heater unit configured to heat the susceptor, a temperature measurement unit configured to measure temperatures of the substrate, and a controller configured to control the heater unit using the temperatures of the substrate, and the temperature measurement unit includes a first measurement unit configured to measure temperatures of the substrate inside the chamber, a second measurement unit configured to measure temperatures of the substrate outside the chamber, a storage unit configured to store first data measured by the first measurement unit, second data measured by the second measurement unit, and third data calculated using the first data and the second data, and a determiner configured to calculate temperatures of the substrate using the third data.
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
A substrate processing apparatus includes: a chamber having a sidewall; a susceptor configured to mount a substrate inside the chamber; an upper dome surrounding an upper surface of the chamber and formed of a transparent dielectric material; an antenna disposed above the upper dome to generate inductively-coupled plasma; and an electromagnetic wave shield housing disposed to surround the antenna, wherein the electromagnetic wave shield housing may be heated by a heater.
C23C 16/48 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
57.
VAPORIZER FOR SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING DEVICE
The present invention relates to a vaporizer for a substrate processing device and a substrate processing device, wherein the vaporizer for a substrate processing device comprises: a first inlet into which a liquid or solid precursor and a first carrier gas are supplied; a diffusion unit including a diffusion space wider than the first inlet and diffusing the precursor within the diffusion space; a second inlet connected to the diffusion unit and supplied with a second carrier gas that assists the diffusion of the precursor; and a vaporization unit communicating with the diffusion unit and vaporizing the diffused precursor.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
58.
METHOD FOR FORMING RUTHENIUM OXIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE COMPRISING SAME
A method for forming a ruthenium oxide film according to an embodiment of the present invention may comprise the steps of: forming a ruthenium film by spraying a precursor containing ruthenium (Ru) toward a substrate; forming a ruthenium oxide film by spraying an oxygen-containing gas onto the ruthenium film; and forming plasma to expose the ruthenium oxide film to the plasma. According to embodiments of the present invention, a ruthenium oxide film with a high oxygen content can be formed. Thus, the quality of the ruthenium oxide film can be improved, leading to an enhancement in performance of the ruthenium oxide film included in a semiconductor device.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
The present invention relates to a solar cell and a method for manufacturing same, the solar cell comprising: a first semiconductor layer; a second semiconductor layer formed on one surface of the first semiconductor layer; a third semiconductor layer formed on the other surface of the first semiconductor layer; a first transparent conductive layer formed on the second semiconductor layer; and a second transparent conductive layer formed on the lower surface of the third semiconductor layer, wherein a first plasma damage prevention layer is provided between the second semiconductor layer and the first transparent conductive layer, and a second plasma damage prevention layer is provided between the third semiconductor layer and the second transparent conductive layer. According to the present invention, the formation of defects in a semiconductor layer can be prevented by a plasma damage prevention layer even when a step for forming a transparent conductive layer is performed.
Provided is a method for manufacturing an SiC substrate. The method for manufacturing the SiC substrate includes preparing a base, forming any one SiC thin film of an n-type SiC thin film or a p-type SiC thin film on the base, and separating the SiC thin film from the base. The forming of the SiC thin film includes injecting a source gas containing silicon (Si) onto the base, performing primary purge of injecting a purge gas after the injection of the source gas is stopped, injecting a reactant gas containing carbon (C) after the stop of the primary purge, and performing secondary purge of injecting the purge gas after the injection of the reactant gas is stopped. Therefore, in accordance with an exemplary embodiment, the SiC thin film may be deposited at a low temperature to prepare the SiC substrate. Accordingly, power or time required for rising the temperature of the base to form the SiC thin film may be reduced.
Disclosed are a raw material supply method including vaporizing a raw material in a canister, discharging the vaporized raw material, measuring an inner temperature of the canister, calculating a calculated temperature by using the inner temperature, and compensating a variation of the inner temperature by heating a heating unit disposed on the canister at the calculated temperature and a raw material supply apparatus applied to the method for supplying the raw material. The raw material supply method and apparatus may stably supply the vaporized raw material to a process space.
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/52 - Controlling or regulating the coating process
62.
BUFFER TANK, SUPPLY BLOCK INCLUDING BUFFER TANK, AND GAS SUPPLY DEVICE
In accordance with an exemplary embodiment, a buffer tank that supplies a gas into a chamber in which a substrate is processed includes: a first body having, therein, a first space accommodating a gas; a second body having a second space having a volume less than that of the first space and accommodating a gas and installed in the first space; and a filter installed in the second body so as to be disposed in the second space. In accordance with exemplary embodiments, a gas supplied from a gas supply unit may remain in the buffer tank for a predetermined time, and inner pressure of the buffer tank may increase. Thus, pressure of the gas discharged from the buffer tank may increase, and accordingly, injection pressure of the gas injected into the chamber connected with the buffer tank may increase.
B05B 7/14 - Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas designed for spraying particulate materials
B05B 7/16 - Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating the material to be sprayed
B05B 15/40 - Filters located upstream of the spraying outlets
The present invention relates to a silicon insulation film forming method and, more specifically, to a silicon insulation film forming method for forming an oxygen-doped silicon insulation film on a substrate. A silicon insulation film forming method according to an embodiment of the present invention, which is a method for forming an oxygen-doped silicon insulation film, comprises the steps of: preparing a substrate in a reaction space; forming a silicon insulation film on the substrate by atomic layer deposition; and forming a plasma by using gas containing oxygen in the reaction space, in order to dope the silicon insulation film with oxygen.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
The embodiments of the present invention relate to a collecting apparatus for collecting a precursor from exhaust gas discharged from a processing apparatus using the precursor. The collecting apparatus may comprise a first collector which is equipped with: a cooling part which has a first refrigerant passing therethrough so as to enable cooling and recovering exhaust gas; and an inner space which is connected to a processing apparatus and is controllable by means of vacuum pressure. Thus, according to the embodiments of the present invention, a precursor may be effectively collected from the exhaust gas discharged from the processing apparatus. That is, collecting efficiency for the precursor collected from the exhaust gas may be improved. Thus, the amount of the precursor that is discarded may be reduced. In addition, the collected precursor may be reused in the processing apparatus, and thus costs arising from the precursor may be reduced.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
C23C 16/52 - Controlling or regulating the coating process
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present inventive concept relates to a substrate treatment apparatus comprising: a chamber; a substrate support portion which supports at least one substrate in the chamber; a first spray portion which sprays a first gas toward the substrate support portion from the upper side of the substrate support portion; a second spray portion which sprays a second gas toward the substrate support portion from the upper side of the first spray portion; and a buffer portion formed between the first spray portion and the second spray portion, wherein the first spray portion includes a plurality of first spray holes and the second spray portion includes a first supply hole which supplies the first gas to the buffer portion and a second spray hole which passes through the buffer portion. The center of an injection port and the center of a discharge port of the first supply hole are spaced apart from each other in the vertical direction, and the discharge port is formed toward a space among the first spray holes.
B05B 1/14 - Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openingsNozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with strainers in or outside the outlet opening
B05B 1/00 - Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
B05B 13/02 - Means for supporting workArrangement or mounting of spray headsAdaptation or arrangement of means for feeding work
67.
ELECTRODE CONNECTION ELEMENT, LIGHT-EMITTING DEVICE COMPRISING SAME, AND METHOD FOR PRODUCING LIGHT-EMITTING DEVICE
The present disclosure relates to an electrode connection element, a light emitting apparatus including the same, and a method for manufacturing the light emitting apparatus, and more particularly, to an electrode connection element, a light emitting apparatus including the same, and a method for manufacturing the light emitting apparatus, which are for electrically connecting an electrode terminal and an external drive circuit. An electrode connection element according to an exemplary embodiment includes: an upper connection member coming into contact with an upper surface of an electrode terminal formed on a substrate; a lower connection member configured to support a lower surface of the substrate; a connection member configured to connect the upper connection member and the lower connection member to each other.
A thin film forming method according to an embodiment of the present invention may comprise the steps of: forming a ruthenium electrode composed of a ruthenium (Ru) metal film on one surface of a substrate; and forming a capping layer on the ruthenium electrode, wherein the step of forming the capping layer may include the steps of: spraying a precursor containing ruthenium (Ru) toward the ruthenium electrode; and spraying a reactant gas containing nitrogen (N) toward the ruthenium electrode. According to embodiments of the present invention, at least one of a ruthenium nitride (RuN) capping layer and a ruthenium oxynitride (RuON) capping layer is formed above the ruthenium (Ru) metal film. Therefore, the oxidation of the ruthenium (Ru) metal film can be suppressed and prevented, and thus, the deterioration in electrical properties of the ruthenium (Ru) metal film due to oxidation can be suppressed and prevented.
Provided is a method for manufacturing a power semiconductor device, which includes forming an active layer on an SiC substrate. The forming of the active layer includes injecting a source gas onto the SiC substrate, performing primary purging of injecting a purge gas after stopping the injecting of the source gas, injecting a reactant gas after stopping the primary purging, and performing secondary purging of injecting the purging gas after stopping the injecting of the reactant gas. Thus, in accordance with exemplary embodiments, the active layer may be formed at a low temperature. Therefore, a substrate or a thin film formed on the substrate may be prevented from being damaged by high-temperature heat. In addition, power or a time required for heating the substrate to form the active layer may be saved, and an overall process time may be shortened.
Provided is a method for depositing a thin film, which is performed to deposit a thin film on a substrate. A method for depositing a thin film includes supplying a source gas together with a first diffusion gas onto a substrate provided in a process space, and supplying a reactant gas together with a second diffusion gas onto the substrate to continuous with the supplying of the source gas. The first diffusion gas and source gas and the second diffusion gas and reactant gas are supplied onto the substrate through paths different from each other.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
The present disclosure relates to a method for depositing a thin film, and more particularly, to a method for depositing a thin film, which forms a gate insulation film on a silicon carbide substrate.
The present disclosure relates to a method for depositing a thin film, and more particularly, to a method for depositing a thin film, which forms a gate insulation film on a silicon carbide substrate.
In accordance with an exemplary embodiment, a method for depositing a thin film includes: preparing a silicon carbide substrate having a plurality of semiconductor regions; and forming a gate insulation film on the silicon carbide substrate at a temperature of 100° C. to 400° C. through an atomic layer deposition process.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
The present inventive concept relates to a solar cell manufacturing method, a solar cell manufactured thereby, and a substrate for a solar cell. The solar cell manufacturing method involves forming a separating portion for separating a substrate, which is for manufacturing the solar cell, into a plurality of pieces. The solar cell manufacturing method comprises: a step for preparing the substrate; a first substrate etching step for forming a first groove in one surface of the substrate; a second substrate etching step for forming a second groove inside the first groove; and a third substrate etching step for etching the substrate including the second groove, wherein the separating portion includes the first groove and the second groove.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0463 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
73.
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
Disclosed are a substrate processing apparatus and method, wherein the number of second measurement units disposed above a substrate in order to measure the temperature of the substrate is less than the number of first measurement units disposed under a heater in order to measure the temperature of the heater, the temperature of the substrate is calculated in real time during a process, and the temperature of the heater is controlled based thereon, whereby it is possible to maintain uniform temperature of the entirety of the substrate. As a result, it is possible to deposit a film having a uniform thickness, thereby improving completeness of a deposition process.
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
Provided is a method for packing a semiconductor, and more particularly, to a method for packaging a semiconductor, which packages the semiconductor device in a wafer level packaging manner. The method for packaging the semiconductor includes: preparing a wafer including a plurality of semiconductor devices; and forming a conductive pattern layer electrically connected to the plurality of semiconductor devices by using a mask member that is provided separately from the wafer.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
The present inventive concept provides a solar cell, including: a semiconductor substrate; a first semiconductor layer provided on one surface of the semiconductor substrate; a second semiconductor layer provided on one surface of the first semiconductor layer; a third semiconductor layer provided on one surface of the second semiconductor layer; a first transparent conductive layer provided on one surface of the third semiconductor layer; and a first electrode provided on one surface of the first transparent conductive layer, wherein the second semiconductor layer includes a p-type semiconductor layer, and the third semiconductor layer includes a p+-type semiconductor layer including W, and a method of manufacturing the solar cell.
H10K 39/15 - Organic photovoltaic [PV] modulesArrays of single organic PV cells comprising both organic PV cells and inorganic PV cells
H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
The present invention relates to a substrate processing apparatus and a substrate processing method, the substrate processing apparatus comprising: a chamber; a susceptor that supports a quadrangular substrate having a side length of 730 mm or more; a gas supply unit that supplies gas toward the susceptor; lift pins that are inserted into the susceptor so as to allow vertical movement and raise and lower the substrate; and a lamp heater disposed below the susceptor.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present inventive concept provides a solar cell and a manufacturing method therefor, the solar cell comprising: a semiconductor substrate; a first transparent electrode layer provided on one surface of the semiconductor substrate; and a first electrode provided on one surface of the first transparent electrode layer, wherein the first electrode comprises a first pattern layer pattern-formed through a deposition process using a shadow mask.
H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups
H01L 31/074 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
Disclosed is a substrate processing apparatus having a symmetrical reaction space in which a process is performed after a substrate is transferred into the reaction space. The substrate processing apparatus may include: a chamber including a reaction space having an opening formed at one or more sidewalls; and a valve configured to open/close the opening. The valve may include: a blade housed in the chamber including the sidewall and a chamber bottom, which form the reaction space, and configured to open/close the opening; and a driving unit configured to raise and lower the blade, wherein one surface of the blade is formed as the same plane as the inner surface of the chamber by the closing of the opening.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
79.
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
In accordance with an exemplary embodiment, a substrate processing method includes: a preparation process of seating a substrate on a support in a chamber; a first cleaning process of injecting a first cleaning gas into the chamber and removing a native oxide on the substrate; a growth process of injecting a process gas into the chamber and growing a thin film on a growth area on one surface of the substrate; and a process of generating inductively coupled plasma (ICP) in the chamber in the first cleaning process, and an inner temperature of the chamber is in a range from 300° C. to 750° C. Thus, in accordance with an exemplary embodiment, a cleaning process of removing the native oxide formed on the growth area of the substrate is performed before the growth process. Thus, a selective growth process may be easily performed on the substrate, and quality of the thin film may improve.
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
C23C 16/52 - Controlling or regulating the coating process
C30B 25/10 - Heating of the reaction chamber or the substrate
The present invention relates to a semiconductor device and a manufacturing method therefor and, more specifically, to a manufacturing method for a semiconductor device having a semiconductor layer comprising gallium nitride. The semiconductor device according to an embodiment of the present invention comprises: a glass substrate; a crystalline seed layer formed on the glass substrate; and a semiconductor layer comprising gallium nitride and formed on the seed layer by an atomic layer deposition process.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
The present inventive concept relates to a substrate processing apparatus comprising: a chamber providing a processing space; a lid for covering the top of the chamber; a substrate support part supporting at least one substrate and rotating about a rotation axis such that the substrate passes through an imaging area; a gas injection part for injecting a process gas toward the substrate support part; an area image capturing part for capturing an image of the imaging area to obtain a thermal image of the imaging area; and a calculation part for calculating the temperature data of the substrate from the thermal image.
The substrate processing device according to one embodiment of the present invention comprises: a chamber having sidewalls; a susceptor having a substrate mounted inside the chamber; an upper dome that covers the upper surface of the chamber and is formed of a dielectric material; a lower dome that covers the lower surface of the chamber and is formed of a dielectric material; a liner disposed inside the chamber and disposed between the upper dome and the lower dome; and an antenna which is placed on the upper dome and which forms an inductively coupled plasma, wherein the ratio of the diameter of the antenna to the diameter of the substrate is 80 percent to 120 percent.
2222) and annealing the metal thin film layer. Therefore, according to embodiments of the present invention, it is possible to form an electrode from which are removed ligand impurities originating from a precursor including at least one of ruthenium (Ru) and molybdenum (Mo). Therefore, an electrode having low resistance can be prepared. In addition, in forming an electrode on a substrate having a trench, the difference between the thickness of a thin film formed on the inner wall forming the trench and the thickness of a thin film formed on the upper surface of the substrate can be reduced, thus improving step coverage.
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
C23C 16/04 - Coating on selected surface areas, e.g. using masks
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
A substrate processing apparatus according to an embodiment of the present invention comprises: a chamber provided with a side wall; a susceptor which is provided with an inclined side surface and on which a substrate is mounted in the chamber; an upper dome covering the upper surface of the chamber and formed of a dielectric material; a lower dome covering the lower surface of the chamber and formed of a dielectric material; and a liner disposed inside the chamber and disposed between the upper dome and the lower dome. The liner comprises an inclined portion provided with an inclined inner surface facing the inclined side surface of the susceptor.
C30B 25/08 - Reaction chambersSelection of materials therefor
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C30B 25/10 - Heating of the reaction chamber or the substrate
85.
THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR
The present invention relates to a thin-film transistor and a manufacturing method therefor. The thin film transistor comprises: a gate electrode; an active layer spaced apart from the gate electrode; a source electrode provided on one side of the active layer; a drain electrode provided on the other side of the active layer; and a contact layer provided in at least one between the active layer and the source electrode and between the active layer and the drain electrode. The contact layer includes a first metal oxide of at least one selected from Zn, In, and Ga.
The present invention relates to a solar cell, including a perovskite solar cell including a light absorption layer including a perovskite compound and a conductive charge transporting layer included in at least one surface of one surface and the other surface of the light absorption layer, wherein the one surface of the light absorption layer is disposed closer to an incident surface for sunlight than the other surface of the light absorption layer, an optical band gap of an inner portion of the light absorption layer is constant or decreases toward the other surface from the one surface, and an optical band gap of the one surface of the light absorption layer is greater than an optical band gap of the other surface of the light absorption layer, and a method of manufacturing the solar cell.
H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
87.
LIGHT-EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR
A light-emitting display device according to the present specification comprises: a substrate comprising a display area and a non-display area that is around the display area; sub-pixels arranged in the display area; a blocking structure arranged in the non-display area; and an encapsulation layer covering the sub-pixels and having an inorganic film extending to be in contact with one side of the blocking structure and an organic film that is over the inorganic film, wherein the inorganic film and the organic film may extend to the blocking structure.
Provided are a method for forming a thin film of a perovskite compound and a method for manufacturing a solar cell using same, characterized by comprising: a process of supplying a precursor B into a chamber; a process of first supplying a precursor X into the chamber while maintaining power for plasma formation turned on; and a process of supplying a precursor A into the chamber, wherein the precursor B is formed of an organometallic compound comprising a divalent cation, the precursor X is formed of hydrogen halide, the precursor A is formed of at least one compound selected from amine-based compounds and amidine-based compounds, and the process of supplying the precursor A is performed after the process of supplying the precursor B and the process of first supplying the precursor X.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/036 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
H10K 71/10 - Deposition of organic active material
The present invention relates to a ferroelectric capacitor and a method for manufacturing a ferroelectric capacitor, the ferroelectric capacitor comprising: a first electrode including titanium nitride (TiN); a ferroelectric layer formed on the first electrode and including a hafnium (Hf) oxide or a hafnium zirconium oxide (HZO); and an interface layer disposed between the ferroelectric layer and the first electrode.
The present invention relates to a gas spraying apparatus, a substrate processing apparatus, and a thin film deposition method, and more specifically, to a gas spraying apparatus, a substrate processing apparatus, and a thin film deposition method for depositing a thin film by spraying gas onto a substrate. The gas spraying apparatus according to an embodiment of the present invention comprises: a first electrode, which has a first gas supply path and a second gas supply path separately provided therein and has a first gas supply port and a second gas supply port connected respectively to the first gas supply path and the second gas supply path; and a second electrode, which is electrically isolated from the first electrode, is spaced apart from the first electrode, and has a plurality of openings arranged to not overlap the first gas supply port or the second gas supply port.
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Provided is a gas supply method using a gas distribution unit which includes a plurality of gas flow rate control devices installed on a plurality of gas suppling channels, respectively, and is configured to individually control the flow rates of process gases supplied through the respective gas supply channels, and differently adjust the gas supply times and supply order of process gases supplied through the respective gas supplying channels, thereby improving the uniformity in thickness of the deposited thin film across the entire surface area of the substrate.
B05D 1/02 - Processes for applying liquids or other fluent materials performed by spraying
B05B 12/08 - Arrangements for controlling deliveryArrangements for controlling the spray area responsive to condition of liquid or other fluent material discharged, of ambient medium or of target
The present invention relates to an atomic layer deposition (ALD) method for forming an IGZO channel layer of a transistor device, the method comprising: a deposition cycle step of performing a deposition cycle for depositing an IGZO channel layer on a substrate; and a repeat step of repeatedly performing the deposition cycle step until the IGZO channel layer is formed with a predetermined thickness, wherein in the deposition cycle step, the IGZO channel layer is formed by performing an indium oxide subcycle for depositing indium oxide (InO), a gallium oxide subcycle for depositing gallium oxide (GaO), and a zinc oxide subcycle for depositing zinc oxide (ZnO).
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
93.
Substrate processing device and substrate processing method
The present disclosure relates to a substrate processing device and a substrate processing method, the substrate processing device comprising: a chamber; a substrate support part installed in a processing space inside the chamber so as to enable one or more substrate to rotate; a first gas spraying part for spraying a source gas on a first area of the processing space; a second gas spraying part for spraying, on a second area of the processing space, a reactant gas reacting with the source gas on the second area; and a third gas spraying part for spraying, on a third area, a purge gas for dividing the first area and the second area.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
The present inventive concept relates to a gas supply apparatus for a substrate processing apparatus, the gas supply apparatus comprising: a first supply line connected to a first gas spray unit; a plurality of first gas supply devices connected to the first supply line; a first measurement device measuring a first pressure at the first supply line; a second supply line connected to a second gas spray unit; a plurality of second gas supply devices connected to the second supply line; and a second measurement device measuring a second pressure at the second supply line, wherein the first measurement device checks if the first pressure deviates from a first reference value, and the second measurement device checks if the second pressure deviates from a second reference value.
The present invention relates to a layer formation method and, more specifically, to a semiconductor device manufacturing method for forming a semiconductor device through a low-temperature process. The layer formation method according to an embodiment of the present invention is a method for manufacturing a semiconductor device which comprises a silicon substrate containing germanium (Ge) or a substrate on which a silicon layer containing germanium (Ge) is formed, and which comprises an undoped gallium nitride (GaN) layer, an N-type gallium nitride (GaN) layer, an active layer and a P-type gallium nitride (GaN) layer, wherein a step of forming at least one gallium nitride layer from among the undoped gallium nitride (GaN) layer, the N-type gallium nitride (GaN) layer, the active layer and the P-type gallium nitride (GaN) layer comprises the steps of: a) sequentially supplying a gallium (Ga) precursor and a nitrogen (N2) precursor at 500°C or lower, thereby forming a gallium nitride (GaN) layer on the substrate; and b) exposing the gallium nitride (GaN) layer to a hydrogen-containing plasma, and steps a) and b) are repeated multiple times.
The present invention relates to: a method for producing a thin film, the method comprising a first forming step for forming a first thin film layer on a substrate by spraying a first source gas comprising a high dielectric constant (High-k) material, a second forming step for forming a second thin film layer on the substrate by spraying a second source gas comprising a high dielectric constant material, and a crystallization step for crystallizing at least one among the first thin film layer and the second thin film layer by using plasma; a thin film; and a substrate processing apparatus.
The present disclosure relates to a substrate processing method, and more particularly, to a substrate processing method for removing an oxide film formed on a substrate. In accordance with an exemplary embodiment, a substrate processing method that processes a substrate loaded into a chamber, includes: supplying a nitrogen-containing gas to an inner space of a plasma generator disposed outside the chamber; activating the nitrogen-containing gas in the inner space; supplying a hydrogen-containing gas to the inner space; and supplying the nitrogen-containing gas activated in the inner space and the hydrogen-containing gas onto the substrate.
The present invention relates to a gas spraying apparatus, a substrate processing apparatus, and a thin film deposition method, and more specifically, to a gas spraying apparatus, a substrate processing apparatus, and a thin film deposition method for depositing a thin film by spraying gas onto a substrate. A gas spraying apparatus according to an embodiment of the present invention comprises: a first plate provided with a first gas supply path and a second gas supply path that are separated from each other, and having a first gas supply port and a second gas supply port connected to the first gas supply path and the second gas supply path, respectively; and a second plate spaced apart from the first plate and having a plurality of openings not aligned with the first gas supply port and the second gas supply port.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
The present invention provides a solar cell and a method for manufacturing same, the solar cell comprising: a light absorbing layer comprising a perovskite compound; and an electron transporting layer on one surface of the light absorbing layer, wherein the electron transporting layer consists of a first electron transporting layer on the one surface of the light absorbing layer, and a second electron transporting layer on the first electron transporting layer, the first electron transporting layer consists of an inorganic metal nitride, and the second electron transporting layer consists of an inorganic metal nitride oxide.
The present invention relates to a tandem solar cell and, more specifically, to a tandem solar cell for electrically connecting a plurality of solar cells. The tandem solar cell according to one embodiment of the present invention comprises: a first solar cell unit having a first upper electrode and a first lower electrode that are arranged to be spaced apart from each other; a second solar cell unit which is provided below the first solar cell unit, and which has a second upper electrode and a second lower electrode that are arranged to be spaced apart from each other; a first output terminal unit connected to the first upper electrode; a second output terminal unit connected to the second lower electrode; and a third output terminal unit commonly connected to the first lower electrode and the second upper electrode.
