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1.
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Apparatus and method for energy recovery
| Application Number |
15455810 |
| Grant Number |
11009540 |
| Status |
In Force |
| Filing Date |
2017-03-10 |
| First Publication Date |
2018-09-13 |
| Grant Date |
2021-05-18 |
| Owner |
Integrated Technology Corporation (USA)
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| Inventor |
- Clauter, Steven T.
- Rogers, Gary B.
- Austin, Norvell Eric
- Wolford, Bradley T.
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Abstract
An energy supply for a test device includes an energy source configured to provide energy via an inductive element for use by test circuitry; and an energy recovery circuit electrically couplable to the energy source and configured to direct unused energy from the inductive element to the energy source.
IPC Classes ?
- G01R 31/26 - Testing of individual semiconductor devices
- G01R 1/36 - Overload-protection arrangements or circuits for electric measuring instruments
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2.
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Loop-back probe test and verification method
| Application Number |
15188024 |
| Grant Number |
10768206 |
| Status |
In Force |
| Filing Date |
2016-06-21 |
| First Publication Date |
2016-12-29 |
| Grant Date |
2020-09-08 |
| Owner |
Integrated Technology Corporation (USA)
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| Inventor |
- Schwartz, Rodney E.
- Geist, John K.
- Kosecki, Daniel
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Abstract
A method is provided for using a loop-back test device to verify continuity between loop-back probes electrically connected to each other on a probe card, the loop-back test device including a first conductive region electrically connected to a substrate, a second conductive region electrically isolated from the substrate, the second conductive region spaced apart from the first conductive region such that when a first loop-back probe contacts the first conductive region a second loop-back probe contacts the second conductive region, The method includes placing the first loop-back probe in electrical contact with the first conductive region, and placing the second loop-back probe in electrical contact with the second conductive region. Continuity between the substrate and the second conductive region is then measured.
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3.
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Damage reduction method and apparatus for destructive testing of power semiconductors
| Application Number |
13560233 |
| Grant Number |
09759763 |
| Status |
In Force |
| Filing Date |
2012-07-27 |
| First Publication Date |
2013-01-31 |
| Grant Date |
2017-09-12 |
| Owner |
Integrated Technology Corporation (USA)
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| Inventor |
- Schwartz, Rodney E.
- Clauter, Steve
- Lohr, David
- Rogers, Gary
- Baggiore, James
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Abstract
A device and method for limiting damage to a semiconductor device under test when the semiconductor device fails during a high current, or high power test is provided. The occurrence of a failure of the device under test is detected, and power applied to the semiconductor device is diverted through a parallel path element upon detection of failure of the semiconductor device.
IPC Classes ?
- G01R 1/067 - Measuring probes
- G01R 1/36 - Overload-protection arrangements or circuits for electric measuring instruments
- G01R 31/12 - Testing dielectric strength or breakdown voltage
- G01R 31/27 - Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects due to surrounding elements
- G01R 31/28 - Testing of electronic circuits, e.g. by signal tracer
- G01R 31/26 - Testing of individual semiconductor devices
- G01R 31/02 - Testing of electric apparatus, lines, or components for short-circuits, discontinuities, leakage, or incorrect line connection
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4.
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DAMAGE REDUCTION METHOD AND APPARATUS FOR DESTRUCTIVE TESTING OF POWER SEMICONDUCTORS
| Application Number |
US2012048563 |
| Publication Number |
2013/016643 |
| Status |
In Force |
| Filing Date |
2012-07-27 |
| Publication Date |
2013-01-31 |
| Owner |
INTEGRATED TECHNOLOGY CORPORATION (USA)
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| Inventor |
- Schwartz, Rodney, E.
- Clauter, Steve
- Lohr, David
- Rogers, Gary
- Baggiore, James
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Abstract
A device and method for limiting damage to a semiconductor device under test when the semiconductor device fails during a high current, or high power test is provided. The occurrence of a failure of the device under test is detected, and power applied to the semiconductor device is diverted through a parallel path element upon detection of failure of the semiconductor device.
IPC Classes ?
- G01R 31/26 - Testing of individual semiconductor devices
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5.
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Probe needle protection method for high current probe testing of power devices
| Application Number |
11752526 |
| Grant Number |
07521947 |
| Status |
In Force |
| Filing Date |
2007-05-23 |
| First Publication Date |
2008-11-27 |
| Grant Date |
2009-04-21 |
| Owner |
Integrated Technology Corporation (USA)
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| Inventor |
- Rogers, Gary
- Clauter, Steve
- Schwartz, Rodney
- Ukai, Taichi
- Lambright, Joe
- Lohr, Dave
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Abstract
A test system, apparatus and method for applying high current test stimuli to a semiconductor device in wafer or chip form includes a plurality of probes for electrically coupling to respective contact points on the semiconductor device, a plurality of current limiters electrically coupled to respective ones of the plurality of probes, and a current sensor electrically coupled to the plurality of probes. The current limiters are operative to limit current flow passing through a respective probe, and the current sensor is operative to provide a signal when detected current in any contact of the plurality of probes exceeds a threshold level.
IPC Classes ?
- G01R 31/02 - Testing of electric apparatus, lines, or components for short-circuits, discontinuities, leakage, or incorrect line connection
- G01R 31/26 - Testing of individual semiconductor devices
- G01R 1/00 - Details of instruments or arrangements of the types covered by groups or
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6.
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PROBILT
| Serial Number |
76176457 |
| Status |
Registered |
| Filing Date |
2000-12-05 |
| Registration Date |
2002-09-24 |
| Owner |
Integrated Technology Corporation ()
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| NICE Classes ? |
20 - Furniture and decorative products
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Goods & Services
commercial work stations including accessories and components therefor for building, testing and repairing probe cards for use in semiconductor manufacture
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