Examples include techniques to implement mutual authentication for confidential computing. Examples are described of implementing mutual authentication for confidential computing that includes use of local attestation.
Disclosed embodiments are relate to heat transfer devices or heat exchangers for computing systems, and in particular, to heat pipes for improved thermal performance at a cold plate interface. A thermal exchange assembly includes a heat pipe (HP) directly coupled to a cold plate. The HP includes a window, which is a recessed or depressed portion of the HP. The window is attached to the cold plate at a window section of the cold plate. The cold plate is configured to be placed on a semiconductor device that generates heat during operation. The cold plate transfers the heat to the HP with less thermal resistance than existing HP solutions. Other embodiments may be described and/or claimed.
A processor of an aspect includes a decode unit to decode a matrix multiplication instruction. The matrix multiplication instruction is to indicate a first memory location of a first source matrix, is to indicate a second memory location of a second source matrix, and is to indicate a third memory location where a result matrix is to be stored. The processor also includes an execution unit coupled with the decode unit. The execution unit, in response to the matrix multiplication instruction, is to multiply a portion of the first and second source matrices prior to an interruption, and store a completion progress indicator in response to the interruption. The completion progress indicator to indicate an amount of progress in multiplying the first and second source matrices, and storing corresponding result data to the third memory location, that is to have been completed prior to the interruption.
Embodiments of a microelectronic assembly comprise: a first set comprising one or more of first integrated circuit (IC) dies; a second set comprising another one or more of the first IC dies; a plate between, and in direct contact with, the first set and the second set; and a second IC die coupled to the first set, the second set, and the plate. Each IC die comprises a substrate of semiconductor material and an interconnect region including metallization in interlayer dielectric (ILD), the substrate and the interconnect region share a planar interface, and the first IC dies and the second IC die are arranged with the planar interfaces of the first IC dies parallel to each other and orthogonal to the planar interface of the second IC die.
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/467 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing gases, e.g. air
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H10B 80/00 - Assemblies of multiple devices comprising at least one memory device covered by this subclass
5.
DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a P-type semiconductor device above a substrate and including first and second semiconductor source or drain regions adjacent first and second sides of a first gate electrode. A first metal silicide layer is directly on the first and second semiconductor source or drain regions. An N-type semiconductor device includes third and fourth semiconductor source or drain regions adjacent first and second sides of a second gate electrode. A second metal silicide layer is directly on the third and fourth semiconductor source or drain regions, respectively. The first metal silicide layer comprises at least one metal species not included in the second metal silicide layer.
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 23/528 - Layout of the interconnection structure
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
H10B 10/00 - Static random access memory [SRAM] devices
H10D 1/47 - Resistors having no potential barriers
H10D 30/62 - Fin field-effect transistors [FinFET]
H10D 30/69 - IGFETs having charge trapping gate insulators, e.g. MNOS transistors
H10D 62/13 - Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
H10D 64/68 - Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
H10D 84/03 - Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
Techniques for low power indoor/outdoor detection are disclosed. In the illustrative embodiment, an integrated sensor hub receives data from an accelerometer. The sensor hub processes the accelerometer data to determine an activity of the user. Depending on the activity of the user, the sensor hub may determine whether the compute device is indoors or outdoors or may receive data from additional sensors, such as a magnetometer, a gyroscope, or an ambient light sensor. The additional sensor data may be used to determine whether the compute device is inside or outside.
G05B 13/02 - Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric
G01J 1/42 - Photometry, e.g. photographic exposure meter using electric radiation detectors
G01P 15/00 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration
G01R 33/00 - Arrangements or instruments for measuring magnetic variables
7.
ILLUMINATION CONTROL IN ROBOTIC END EFFECTOR MANIPULATION
A component of a system, including: processor circuitry; and a non-transitory computer-readable storage medium including instructions that, when executed by the processing circuitry, cause the processor circuitry to: receive image data of an object captured by a camera; analyze a visual feature of the object based on the received image data; generate illumination patterns based on the analyzed visual feature; and control arrays of light sources integrated into a plurality of fingers of a robotic gripper to project the illumination patterns within a grasp volume defined by the plurality of fingers during object manipulation to enhance detection of the visual feature of the object, wherein each light source in the arrays of light sources is individually controllable.
B25J 13/08 - Controls for manipulators by means of sensing devices, e.g. viewing or touching devices
B25J 19/00 - Accessories fitted to manipulators, e.g. for monitoring, for viewingSafety devices combined with or specially adapted for use in connection with manipulators
8.
HUMAN-ROBOT INTERFACE SYSTEM WITH BIDIRECTIONAL HAPTIC FEEDBACK
A bidirectional haptic feedback system, including: a flexible membrane configured to be mounted on a handheld controller; sensor-actuator units arranged on the flexible membrane, the sensor-actuator units respectively including a damping mechanism configured to mechanically isolate vibrations between adjacent sensor-actuator units; a control system configured to: generate vibration signals within selected frequency bands within a proximity to a natural resonant frequency range of the sensor-actuator units to drive the actuators of the sensor-actuator units to deliver haptic feedback to a user based on a state of the robot; simultaneously detect user grasp contact and pressure through analysis of back electromotive force (EMF) signals generated by the sensor-actuator units; and adjust robot control parameters dynamically in response to the detected grasp contact and pressure.
An apparatus includes a host interface; a network interface; hardware storage to store a flow table; and programmable circuitry comprising processors to implement network interface functionality and to: implement a hash table and an age context table, wherein the hash table and the age context table are to reference flow rules maintained in the flow table; process a synchronization packet for a flow by adding a flow rule for the flow to the flow table, adding a hash entry corresponding to the flow rule to the hash table, and adding an age context entry for the flow to the age context table; and process subsequent packets for the flow by performing a first lookup at the hash table to access the flow rule at the flow table and by performing a second lookup at the age context table to apply aging rules to the flow rule in the flow table.
Embodiments disclosed herein include a capacitor apparatus. In an embodiment, the apparatus comprises a first metal layer and a first plate above the first metal layer, where the first plate is electrically conductive. In an embodiment, a second plate is above the first plate, where the second plate is electrically conductive, and a third plate is above the second plate, where the third plate is electrically conductive. In an embodiment, a second metal layer is above the third plate, and a first via is between the first metal layer and the second metal layer, where the first via contacts the first plate and the third plate. In an embodiment, a second via is between the first metal layer and the second metal layer, where the second via contacts the second plate, and a third via is between the first metal layer and the first plate.
H01L 27/10 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
11.
INTEGRATED CIRCUIT DEVICES WITH BACKSIDE SEMICONDUCTOR STRUCTURES
An IC device may include a semiconductor structure and a backside semiconductor structure over the semiconductor structure. The semiconductor structure and backside semiconductor structure may constitute the source or drain region of a transistor. The backside semiconductor structure may be closer to the backside of a substrate of the IC device than the semiconductor structure. The backside semiconductor structure may be formed at a lower temperature than the semiconductor structure. The backside semiconductor structure may have one or more different materials from the semiconductor structure. For instance, a semiconductor material in the backside semiconductor structure may have a different crystal direction from a semiconductor material in the semiconductor structure. As another example, the backside semiconductor structure may have one or more different chemical compounds from the semiconductor structure. The backside semiconductor structure may be over a backside via that can couple the backside semiconductor structure to a backside metal layer.
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
A method comprises fetching, by fetch circuitry, an encoded XOR3P instruction comprising at least one opcode, a first source identifier to identify a first register, a second source identifier to identify a second register, a third source identifier to identifier a third register, and a fourth source identifier to identify a fourth operand, wherein the first register is to store a first value, the second register is to store a second value, and the third register is to store a third value, decoding, by decode circuitry, the encoded XOR3PP instruction to generate a decoded XOR3PP instruction; and executing, by execution circuitry, the decoded XOR3PP instruction to determine a first rotational value and a second rotational value, perform a rotate operation on at least a portion of the first value based on the first rotational value to generate a rotated third value, perform an XOR operation on at least a portion of the first value, at least a portion of the second value, and the rotated third value to generate an XOR result, perform a rotate operation on the XOR result based on the second rotational value to generate a rotated XOR; and store the rotated XOR result.
The present disclosure is directed to a high-voltage magnetron sputtering tool with an enhanced power source including a vacuum chamber containing a magnetron cathode with a magnet array, a target, and an anode, as well as the enhanced power source that includes high-power DC power source and controller that produces a pulsed output. In an aspect, the enhanced power source may include a standard power source that is retrofitted a supplemental high-power DC power source and controller, and alternatively, a high-power DC power source and controller that replaces the standard power source. In addition, the present disclosure is directed to methods for depositing a hydrogen-free diamond-like carbon film on a semiconductor substrate using the high-voltage magnetron sputtering tool. In an aspect, the hydrogen-free diamond-like carbon film may be an etch mask having a sp3 carbon bonding that is greater than 60 percent.
Self-aligned gate endcap (SAGE) architectures with reduced or removed caps, and methods of fabricating self-aligned gate endcap (SAGE) architectures with reduced or removed caps, are described. In an example, an integrated circuit structure includes a first gate electrode over a first semiconductor fin. A second gate electrode is over a second semiconductor fin. A gate endcap isolation structure is between the first gate electrode and the second gate electrode, the gate endcap isolation structure having a higher-k dielectric cap layer on a lower-k dielectric wall. A local interconnect is on the first gate electrode, on the higher-k dielectric cap layer, and on the second gate electrode, the local interconnect having a bottommost surface above an uppermost surface of the higher-k dielectric cap layer.
H10D 64/66 - Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 23/535 - Arrangements for conducting electric current within the device in operation from one component to another including internal interconnections, e.g. cross-under constructions
H10D 84/03 - Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
H10D 84/83 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
Fin smoothing, and integrated circuit structures resulting therefrom, are described. For example, an integrated circuit structure includes a semiconductor fin having a protruding fin portion above an isolation structure, the protruding fin portion having substantially vertical sidewalls. The semiconductor fin further includes a sub-fin portion within an opening in the isolation structure, the sub-fin portion having a different semiconductor material than the protruding fin portion. The sub-fin portion has a width greater than or less than a width of the protruding portion where the sub-fin portion meets the protruding portion. A gate stack is over and conformal with the protruding fin portion of the semiconductor fin. A first source or drain region at a first side of the gate stack, and a second source or drain region at a second side of the gate stack opposite the first side of the gate stack.
An apparatus, computer-implemented method, and system for prioritizing a plurality of applications based on memory bandwidth utilization. The apparatus includes memory circuitry, machine-readable instructions, and processor circuitry to determine a bandwidth threshold based on the plurality of applications, wherein the bandwidth threshold is a percentage of total memory bandwidth utilization. The apparatus further receives a hint from the processor circuitry when the bandwidth threshold is exceeded. The apparatus then applies a prioritization policy to the plurality of applications while the bandwidth threshold is exceeded.
Embodiments of the present disclosure are directed to applying the higher effective isotropic radiated power (EIRP) limits that are set to subordinate devices to client devices that meet indoor constrains to form their own networks concurrently to operate as a client under the control of indoor access point (AP). Other embodiments may be described and claimed.
H04W 52/34 - TPC management, i.e. sharing limited amount of power among users or channels or data types, e.g. cell loading
H04W 52/36 - Transmission power control [TPC] using constraints in the total amount of available transmission power with a discrete range or set of values, e.g. step size, ramping or offsets
H04W 88/10 - Access point devices adapted for operation in multiple networks, e.g. multi-mode access points
A multi-slot connector having reduced DIMM-to-DIMM pitch distances can support up to 64 memory channels for next generation DDR (double data rate) technology, including DDR6. To support the increase in memory channels, while compensating for limited form factor motherboards, the multi-slot connector includes two or more slots for devices, such as DIMMs, to connect to a motherboard or other platform. Reduced pitch distances between the DIMMs, shortened connector pins, thinner contacts, and complementary reduced pitch distances in a ball grid array (BGA) used to connect to the motherboard or other platform, provides a compact multi-slot connector that can support up to 64 memory channels with improved performance characteristics. An optional cooling device can be employed between the slots as needed to maintain optimal performance.
Disclosed herein is a method for automatically routing a circuit layout of a metal layer of an interposer is provided. The method may include identifying anchor points of the metal layer; sorting the anchor points by location; determining neighbouring anchor points of a same supply net from the location of the anchor points; and creating vertical straps on the circuit layout plan through the neighbouring anchor points of the same supply net.
A UE configured for operating in a 5G NR network may decode signalling that schedules two physical downlink shared channels (PDSCHs) in a same time slot. When the UE is a reduced-bandwidth (RBW) reduced-capacity (RedCap) UE (RBW-RedCap UE), the UE may determine if a total number of allocated PRBs in an OFDM symbol for the two scheduled PDSCHs exceed a predetermined value when the two scheduled PDSCHs either partially or fully overlap in time in non-overlapping PRBs. The UE may also prioritize decoding of one of the two scheduled PDSCHs when the total number of allocated PRBs exceed the predetermined value and when the two scheduled PDSCHs either partially or fully overlap in time in non-overlapping PRBs. If a first of the two scheduled PDSCHs is a unicast PDSCH and a second of the two scheduled PDSCHs is a broadcast PDSCH, the UE may prioritize decoding of the unicast PDSCH.
H04W 72/1273 - Mapping of traffic onto schedule, e.g. scheduled allocation or multiplexing of flows of downlink data flows
H04W 72/0446 - Resources in time domain, e.g. slots or frames
H04W 72/51 - Allocation or scheduling criteria for wireless resources based on terminal or device properties
H04W 72/566 - Allocation or scheduling criteria for wireless resources based on priority criteria of the information or information source or recipient
Examples described herein relate to a network interface device. In some examples, the network interface device includes a host interface; a direct memory access (DMA) circuitry; a network interface; and circuitry. The circuitry can be configured to: apply, for a tunnel packet, a single match-action rule that comprises a value of the encapsulation header of the tunnel packet and a value of the encapsulated header, wherein the single match-action rule is based on two or more match-action rules.
A fabrication method and associated integrated circuit (IC) structures and devices that include one or more conductive vias is described herein. In one example, a conductive via is formed from one side of the integrated circuit, and then a portion of the conductive via is widened from a second side of the IC structure opposite the first side. In one example, a resulting IC structure includes a first portion having a first width, a second portion having a second width, and a third portion having a third width, wherein the third portion is between the first portion and the second portion, and the third width is smaller than the first width and the second width. In one such example, the conductive via tapers from both ends towards the third portion between the ends.
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
Various embodiments herein provide techniques related to measurements in a testing scenario by a user equipment (UE) that is configured to use a pre-configured measurement gap (pre-MG). In embodiments, the UE may be configured to perform one or more measurements with the pre-MG disabled. The pre-MG may then be enabled and the UE may perform additional measurements. In this way, a plurality of parameters related to the UE and/or the pre-MG may be identified based on the testing scenario. Other embodiments may be described and/or claimed.
A method and device for generating a shared session secret with forward secrecy between a first device and a second device. The first and second devices perform mutual authentication. The first and second devices establish a first shared secret using a key encapsulation mechanism with a long-term cryptographic key pair of the devices. The first and second devices generate an ephemeral cryptographic key pair comprising an ephemeral public key and an ephemeral private key, respectively, and transfer the ephemeral public key of the device to the other device using the first shared secret. The first and second devices then establish a second shared secret using the key encapsulation mechanism with the ephemeral public keys of the first device and the second device. The second shared secret is used as a temporary shared session secret.
An IC device with one or more transistors may also include one or more vias and jumpers for delivering power to the transistors. For instance, a via may be coupled to a power plane. A jumper may be connected to the via and an electrode of a transistor. With the via and jumper, an electrical connection is built between the power plane and the electrode. The via may be self-aligned. The IC device may include a dielectric structure at a first side of the via. A portion of the jumper may be at a second side of the via. The second side opposes the first side. The dielectric structure and the portion of the jumper may be over another dielectric structure that has a different dielectric material from the dielectric structure. The via may be insulated from another electrode of the transistor, which may be coupled to a ground plane.
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
Embodiments herein relate to a system which predicts the frequency or phase offset of a primary clock signal relative to a stable reference such as an atomic clock based on the frequency or phase offsets, respectively, of secondary clock signals relative to the frequency or phase, respectively, of the primary clock signal. The system can include a neural network which is trained to learn a correspondence between the offset of the primary clock signal relative to the stable reference and the offsets of the secondary clock signals relative to the primary clock signal. The training can include varying environmental conditions such as temperature, vibration, pressure, humidity or magnetic field. Once trained, the neural network can be used to provide a stable output clock signal based on the primary clock signal and its predicted offset.
H03B 5/04 - Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
H03B 5/32 - Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
H03L 7/099 - Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
Embodiments herein relate to a clock distribution network (CDN) which has an adjustable path length and therefore an adjustable resonant frequency. In one approach, the CDN includes first and second transmission lines to distribute first and second differential clocks to one or more data lanes. Each transmission line includes a signal conductor and a return conductor. Each data lane can receive a clock signal from respective tap points on the signal conductors of the transmission lines. The return conductors include switch points at different positions along the length of the return conductors which are coupled to respective switches. When a selected switch is closed, the return conductors are short-circuited to one another to reduce their effective length and therefore the resonant frequency of the CDN.
This disclosure describes systems, methods, and devices related to using padding bits for protecting trigger frames, block acknowledgement request frames, and block acknowledgement frames in Wi-Fi. A device may generate padding bits of a trigger frame, a block acknowledgment request frame, or a block acknowledgement frame; generate one or more fields signaling that the padding bits are present in the trigger frame, the block acknowledgement request frame, or the block acknowledgement frame; and cause to send the trigger frame, the block acknowledgement request frame, or the block acknowledgement frame to one or more STAs, the trigger frame, the block acknowledgement request frame, or the block acknowledgement frame including the one or more fields and the padding bits.
A cross-domain device includes interfaces to couple to a first device, second device, and third device. The cross-domain device creates a first buffer in its shared memory to allow writes by the first device associated with a first software module and reads by the second device associated with a second software module, and creates a second buffer in the shared memory separate from the first buffer to allow writes by the first device associated with the first software module and reads by the third device associated with a third software module. The cross-domain device uses the first buffer to implement a first memory-based communication link between the first software module and the second software module, and uses the second buffer to implement a second memory-based communication link between the first software module and the third software module.
An apparatus to facilitate barrier state save and restore for preemption in a graphics environment is disclosed. The apparatus includes processing resources to execute a plurality of execution threads that are comprised in a thread group (TG) and mid-thread preemption barrier save and restore hardware circuitry to: initiate an exception handling routine in response to a mid-thread preemption event, the exception handling routine to cause a barrier signaling event to be issued; receive indication of a valid designated thread status for a thread of a thread group (TG) in response to the barrier signaling event; and in response to receiving the indication of the valid designated thread status for the thread of the TG, cause, by the thread of the TG having the valid designated thread status, a barrier save routine and a barrier restore routine to be initiated for named barriers of the TG.
Solder materials and microelectronic devices and systems deploying the solder materials are discussed. The solder material includes a bulk material of tin and bismuth and particles interspersed in the tin and bismuth bulk material. The particles are a metal other than tin and bismuth, and an intermetallic compound is formed around the particles. The intermetallic compound includes the metal of the particles and tin or bismuth. The solder materials are deployed as interconnect structures to interconnect components, such as electrically coupling an integrated circuit package to a motherboard.
Integrated circuit structures having cut metal gates, and methods of fabricating integrated circuit structures having cut metal gates, are described. For example, an integrated circuit structure includes a fin having a portion protruding above a shallow trench isolation (STI) structure. A gate dielectric material layer is over the protruding portion of the fin and over the STI structure. A conductive gate layer is over the gate dielectric material layer. A conductive gate fill material is over the conductive gate layer. A dielectric gate plug is laterally spaced apart from the fin, the dielectric gate plug on but not through the STI structure. The gate dielectric material layer and the conductive gate layer are not along sides of the dielectric gate plug, and the conductive gate fill material is in contact with the sides of the dielectric gate plug.
Self-aligned gate endcap (SAGE) architectures with improved caps, and methods of fabricating self-aligned gate endcap (SAGE) architectures with improved caps, are described. In an example, an integrated circuit structure includes a first gate structure over a first semiconductor fin. A second gate structure is over a second semiconductor fin. A gate endcap isolation structure is between the first gate structure and the second gate structure. The gate endcap isolation structure has a higher-k dielectric cap layer on a lower-k dielectric wall. The higher-k dielectric cap layer includes hafnium and oxygen and has 70% or greater monoclinic crystallinity.
H10D 64/68 - Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
H10D 64/27 - Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
H10D 84/83 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
34.
FRAMEWORK FOR OPTIMIZATION OF MACHINE LEARNING ARCHITECTURES
The present disclosure is related to framework for automatically and efficiently finding machine learning (ML) architectures that are optimized to one or more specified performance metrics and/or hardware platforms. This framework provides ML architectures that are applicable to specified ML domains and are optimized for specified hardware platforms in significantly less time than could be done manually and in less time than existing ML model searching techniques. Furthermore, a user interface is provided that allows a user to search for different ML architectures based on modified search parameters, such as different hardware platform aspects and/or performance metrics. Other embodiments may be described and/or claimed.
Systems, apparatus, articles of manufacture, and methods are disclosed to partition a boot drive for two or more processor circuits. An example apparatus includes at least one first processor circuit to determine at least one first parameter for a first namespace and at least one second parameter for a second namespace to be configured for a non-volatile memory (NVM) boot drive, cause a first controller of the NVM boot drive to create the first namespace based on the at least one first parameter, and cause the first controller to create the second namespace based on the at least one second parameter. Also, the example at least one first processor circuit is to attach the first namespace to the first controller of the NVM boot drive, attach the second namespace to a second controller of the NVM boot drive, and attach the second controller to a bootloader of a second processor circuit.
A transport system, including: a plurality of self-lifting wheel units individually controllable and mounted to a transport platform; one or more sensors mounted to the transport platform and configured to detect a floor obstacle, floor elevation change, or floor surface irregularity; a control system operatively connected to the plurality of self-lifting wheel units and the one or more sensors, wherein the control system is configured to: receive floor obstacle, elevation change, or surface irregularity detection data from the one or more sensors; plan and control the plurality of self-lifting wheel units to selectively lift or lower to maintain stability of the transport platform when traversing the floor obstacle, the floor elevation change, or the floor surface irregularity; and regulate movement of the transport platform to traverse the floor obstacle, the floor elevation change, or the floor surface irregularity based the plan and control.
B60G 17/0165 - Resilient suspensions having means for adjusting the spring or vibration-damper characteristics, for regulating the distance between a supporting surface and a sprung part of vehicle or for locking suspension during use to meet varying vehicular or surface conditions, e.g. due to speed or load the regulating means comprising electric or electronic elements characterised by their responsiveness, when the vehicle is travelling, to specific motion, a specific condition, or driver input to an external condition, e.g. rough road surface, side wind
G01S 17/08 - Systems determining position data of a target for measuring distance only
G01S 17/931 - Lidar systems, specially adapted for specific applications for anti-collision purposes of land vehicles
Integrated circuitry comprising a ribbon or wire (RoW) transistor stack within which the transistors have different threshold voltages (Vt). In some examples, a gate electrode of the transistor stack may include only one workfunction metal. A metal oxide may be deposited around one or more channels of the transistor stack as a solid-state source of a metal oxide species that will diffuse toward the channel region(s). As diffused, the metal oxide may remain (e.g., as a silicate, or hafnate) in close proximity to the channel region, thereby altering the dipole properties of the gate insulator material. Different channels of a transistor stack may be exposed to differing amounts or types of the metal oxide species to provide a range of Vt within the stack. After diffusion, the metal oxide may be stripped as sacrificial, or retained.
H10D 84/03 - Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
A cross-domain device includes a memory with a shared memory region. The device further includes a first interface to couple to a first device over a first interconnect, where the first device implements a first domain, and includes a second interface to couple to a second device over a second interconnect, where the second device implements a second domain, and the first domain is independent of the second domain. The cross-domain device is to create a buffer in the shared memory region to allow writes by a first software module in the first domain and reads by a second software module in the second domain, and use the buffer to implement a memory-based communication link between the first software module and the second software module.
Glass cores with embedded power delivery components are disclosed. An example apparatus includes a glass layer including an opening, a dielectric material within the opening, a first cluster of inductors extending through the dielectric material, and a second cluster of inductors extending through the dielectric material, the second cluster spaced apart from the first cluster, the dielectric material extending continuously from around the first cluster to around the second cluster.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
Porous liners for through-glass vias and associated methods are disclosed. An example apparatus includes a glass layer having a through-hole. The example apparatus further includes a conductive material within the through-hole. The example apparatus also includes a porous material between at least a portion of the conductive material and at least a portion of a sidewall of the through-hole.
Systems, apparatus, articles of manufacture, and methods are disclosed to implement personalized skin tone adaptation for images and video. An example apparatus disclosed herein obtains an initial skin tone group distribution for an identified user depicted in an input image. The example apparatus also determines, based on the input image, a plurality of skin tone measurements associated respectfully with a plurality of skin tone groups corresponding to the initial skin tone group distribution. The example apparatus further outputs a revised skin tone group distribution based on the skin tone measurements, the initial skin tone group distribution, and a transition model.
G06V 10/84 - Arrangements for image or video recognition or understanding using pattern recognition or machine learning using probabilistic graphical models from image or video features, e.g. Markov models or Bayesian networks
G06T 7/90 - Determination of colour characteristics
G06T 11/60 - Editing figures and textCombining figures or text
G06V 10/56 - Extraction of image or video features relating to colour
42.
MICROELECTRONIC ASSEMBLIES HAVING TOPSIDE POWER DELIVERY STRUCTURES
Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate, having a surface, including a first conductive pathway electrically coupled to a power source; a first microelectronic component, having an active side electrically coupled to the surface of the package substrate and an opposing back side, surrounded by an insulating material; a second microelectronic component, having an active side electrically coupled to the surface of the package substrate and an opposing back side, surrounded by the insulating material and including a through-substrate via (TSV) electrically coupled to the first conductive pathway; and a redistribution layer (RDL), on the insulating material, including a second conductive pathway electrically coupling the TSV, the second surface of the second microelectronic component, and the second surface of the first microelectronic component.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
43.
ORTHOGONAL COLD PLATE FOR USE IN ACTIVE LIQUID IMMERSION COOLING
A cold plate comprises a plurality of fins. The individual fins have an opening, and the openings collectively define a first channel through the plurality of fins. During operation of an integrated circuit component attached to the cold plate, coolant is pumped through the cold plate. The coolant flows in a first direction through the first channel and then in a second through second channels located between the fins. The first direction is substantially orthogonal to the second direction. The first channel can comprise a tube that has openings that direct coolant to flow into the second channels. The first channel is located close to the base plate of the cold plate so that there is a high degree of heat transfer between an integrated circuit component attached to the cold plate and coolant flowing through the cold plate.
An electronic device is provided that implements thermally conductive plastic supports that may replace the typical use of “feet” used in conventional electronic devices. The thermally conductive supports may extend through the bottom chassis cover (e.g. the “D cover”) of the electronic device, and be mechanically and thermally coupled to a heat pipe that is in turn coupled to a heat source for which thermal regulation is utilized. The thermally conductive plastic supports may provide a heat path from the heat source to the bottom chassis cover and, when the electronic device is disposed on a surface, an additional heat path may be provided from the heat source to this surface.
An apparatus for a user equipment (UE) is configured for operation in a Next Generation Radio Access Network (RAN). The apparatus includes processing circuitry to encode a radio resource control (RRC) setup request message for transmission to a distributed unit (DU) function of a base station. The processing circuitry is to decode an RRC setup message received from the DU function. The RRC setup message is responsive to the RRC setup request message. The processing circuitry is to perform a selection of a public land mobile network (PLMN) based on the RRC setup message. The processing circuitry is to encode an RRC setup complete message for transmission to the DU function. The RRC setup complete message includes a global unique temporary identifier (GUTI) of the UE, an access and mobility management function (AMF) identification (ID) of a previously contacted AMF, and an ID of the PLMN.
Examples to determine a dynamic batch size of a layer are disclosed herein. An example apparatus to determine a dynamic batch size of a layer includes a layer operations controller to determine a layer ratio between a number of operations of a layer and weights of the layer, a comparator to compare the layer ratio to a number of operations per unit of memory size performed by a computation engine, and a batch size determination controller to, when the layer ratio is less than the number of operations per unit of memory size, determine the dynamic batch size of the layer.
Apparatus including speakers ported through keys of a keyboard are disclosed. An example electronic device includes a housing, and a keyboard carried by the housing. The keyboard includes a key having a keycap that covers an associated switch. The example electronic device further includes a speaker within the housing underneath the keyboard. The keycap includes an opening to define a port through which sound from the speaker is able to pass.
H01H 13/7065 - Switches having rectilinearly-movable operating part or parts adapted for pushing or pulling in one direction only, e.g. push-button switch having a plurality of operating members associated with different sets of contacts, e.g. keyboard with contacts carried by or formed from layers in a multilayer structure, e.g. membrane switches characterised by construction, mounting or arrangement of operating parts, e.g. push-buttons or keys characterised by the mechanism between keys and layered keyboards
This disclosure describes systems, methods, and devices related to enhanced service period updates. A device may receive, from a station (STA), a negotiation request that identifies a service period and one or more transmission and reception (Tx/Rx) parameters to be updated during the service period. The device may define the service period based on the received negotiation request, wherein the service period is determined using a target wake time (TWT) element. The device may adjust, based on the negotiation request, the one or more Tx/Rx parameters for operation during the service period, wherein the one or more Tx/Rx parameters include at least a maximum modulation and coding scheme (Max MCS). The device may transmit a confirmation to the STA after updating the one or more Tx/Rx parameters. The device may revert the one or more Tx/Rx parameters to default values outside the service period.
A cross-domain device includes a first interface to couple to a first device and a second interface to couple to a second device, where the first device is to implement a first component in a radio access network (RAN) system in a first computing domain, and the second device is to implement a second component in the RAN system in a second computing domain. The first component is to interface within the second component in a RAN processing pipeline. The cross-domain device further comprises hardware to implement a communication channel between the first device and the second device to pass data from the first component to the second component, where the communication channel enforces isolation of the first computing domain from the second computing domain.
A fabrication method and associated integrated circuit (IC) structures and devices that include one or more self-insulated vias is described herein. In one example, an IC structure includes a via surrounded by an insulator material and a layer of insulator material between a conductive material of the via and the surrounding insulator material. In one example, the layer of insulator material has one or more material properties that are different than the surrounding insulator material, including one or more of a different density, a different dielectric constant, and a different material composition.
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 23/528 - Layout of the interconnection structure
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
51.
INFRASTRUCTURE-BASED COLLABORATIVE AUTOMATED PARKING AND LOCATION MANAGEMENT
Systems and techniques for location management are described herein. In an example, a system may include at least one processor and at least one memory with instructions stored thereon that when executed by the processor, cause the processor to obtain data originating from one or more sensors proximate to the location. A trained activity-based detection model may identify an activity at the location and perform a determination of a service to be offered at the location based on the detected activity. The system may then send a message to a user offering the service to the user, and in response to receiving an authorization accepting the service from the user, cause the service to be implemented at the location, which may include classifying the service as a service type, matching the service type to a service provider, and sending a notification to the service provider.
B60L 53/36 - Means for automatic or assisted adjustment of the relative position of charging devices and vehicles by positioning the vehicle
B60L 53/63 - Monitoring or controlling charging stations in response to network capacity
B60L 55/00 - Arrangements for supplying energy stored within a vehicle to a power network, i.e. vehicle-to-grid [V2G] arrangements
G06Q 20/40 - Authorisation, e.g. identification of payer or payee, verification of customer or shop credentialsReview and approval of payers, e.g. check of credit lines or negative lists
Various approaches for configuring or operating a floating satellite network ground station on a ship or other marine vessel that transits among multiple geographic areas, are discussed. An example method for configuration includes: receiving configuration information for a compute node (e.g., mobile data center) to be operated as a temporary non-terrestrial network (NTN) ground station, with the compute node located on a marine vessel that has connectivity to the satellite NTN via a feeder link; configuring the compute node to operate as the temporary NTN ground station, based on the configuration information; and modifying the feeder link to perform data communications between the temporary NTN ground station and respective orbiting satellites of the satellite NTN. The feeder link is dynamically modified based on network usage and restrictions applicable to a geographic location of the marine vessel, such as an exclusion zone (EZ) defined for NTN communications.
Embodiments of systems, methods, and apparatuses for heterogeneous computing are described. In some embodiments, a hardware heterogeneous scheduler dispatches instructions for execution on one or more plurality of heterogeneous processing elements, the instructions corresponding to a code fragment to be processed by the one or more of the plurality of heterogeneous processing elements, wherein the instructions are native instructions to at least one of the one or more of the plurality of heterogeneous processing elements.
A method and system of neural network dynamic noise suppression (DNS) is provided for audio processing. The system is a down-scaled DNS model that uses grouping techniques at pointwise convolutional layers to reduce the number of network parameters. According to one technique, audio signal data can be coded into an input vector that that is split into multiple groups, each groups having multiple channels. At a pointwise convolution layer, an output is generated for each group. The outputs can be concatenated to form a single input vector for a next layer of the model. Each group is treated as a channel, such that the reduction in the number of channels reduces the number of parameters used by the neural network. In some examples, the groups are weight sharing groups.
G10L 25/30 - Speech or voice analysis techniques not restricted to a single one of groups characterised by the analysis technique using neural networks
G10L 25/78 - Detection of presence or absence of voice signals
H04R 3/04 - Circuits for transducers for correcting frequency response
55.
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND DEVICES
Self-aligned gate endcap (SAGE) architectures with gate-all-around devices, and methods of fabricating self-aligned gate endcap (SAGE) architectures with gate-all-around devices, are described. In an example, an integrated circuit structure includes a semiconductor fin above a substrate and having a length in a first direction. A nanowire is over the semiconductor fin. A gate structure is over the nanowire and the semiconductor fin, the gate structure having a first end opposite a second end in a second direction, orthogonal to the first direction. A pair of gate endcap isolation structures is included, where a first of the pair of gate endcap isolation structures is spaced equally from a first side of the semiconductor fin as a second of the pair of gate endcap isolation structures is spaced from a second side of the semiconductor fin.
H10D 30/62 - Fin field-effect transistors [FinFET]
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H10D 84/03 - Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
56.
EPITAXIAL SOURCE OR DRAIN STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a fin comprising silicon, the fin having a lower fin portion and an upper fin portion. A gate electrode is over the upper fin portion of the fin, the gate electrode having a first side opposite a second side. A first epitaxial source or drain structure is embedded in the fin at the first side of the gate electrode. A second epitaxial source or drain structure is embedded in the fin at the second side of the gate electrode, the first and second epitaxial source or drain structures comprising silicon and germanium and having a match-stick profile.
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 23/528 - Layout of the interconnection structure
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
H10B 10/00 - Static random access memory [SRAM] devices
H10D 1/47 - Resistors having no potential barriers
H10D 30/62 - Fin field-effect transistors [FinFET]
H10D 30/69 - IGFETs having charge trapping gate insulators, e.g. MNOS transistors
H10D 62/00 - Semiconductor bodies, or regions thereof, of devices having potential barriers
H10D 62/10 - Shapes, relative sizes or dispositions of the regions of the semiconductor bodiesShapes of the semiconductor bodies
H10D 62/13 - Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
H10D 62/822 - Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
H10D 62/834 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
H10D 64/23 - Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
H10D 64/68 - Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
H10D 84/03 - Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
H10D 84/83 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
Advanced lithography techniques including sub-10 nm pitch patterning and structures resulting therefrom are described. Self-assembled devices and their methods of fabrication are described.
H01L 23/528 - Layout of the interconnection structure
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
H10D 30/69 - IGFETs having charge trapping gate insulators, e.g. MNOS transistors
H10D 84/83 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
58.
MULTI-CHIP PACKAGE WITH HIGH DENSITY INTERCONNECTS
An apparatus is provided which comprises: a plurality of first conductive contacts having a first pitch spacing on a substrate surface, a plurality of second conductive contacts having a second pitch spacing on the substrate surface, and a plurality of conductive interconnects disposed within the substrate to couple a first grouping of the plurality of second conductive contacts associated with a first die site with a first grouping of the plurality of second conductive contacts associated with a second die site and to couple a second grouping of the plurality of second conductive contacts associated with the first die site with a second grouping of the plurality of second conductive contacts associated with the second die site, wherein the conductive interconnects to couple the first groupings are present in a layer of the substrate above the conductive interconnects to couple the second groupings. Other embodiments are also disclosed and claimed.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
59.
EMIB ARCHITECTURE WITH DEDICATED METAL LAYERS FOR IMPROVING POWER DELIVERY
Embodiments disclosed herein include electronic packages with a bridge that comprise improved power delivery architectures. In an embodiment, a bridge comprises a substrate and a routing stack over the substrate. In an embodiment, the routing stack comprises first routing layers, where individual ones of the first routing layers have a first thickness, and a second routing layer, where the second routing layer has a second thickness that is greater than the first thickness.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
Examples described herein relate to a network interface device. The network interface device includes a host interface; a network interface; and a direct memory access (DMA) circuitry. In some examples, the host interface includes circuitry to: apply a first configuration of Peripheral Component Interconnect Express (PCIe) upstream ports and downstream ports and without reboot of the network interface device, apply a second configuration to adjust routing of communication among devices coupled to the PCIe upstream ports and downstream ports.
Systems and methods include establishing a cryptographically secure communication between an application module and an audio module. The application module is configured to execute on an information-handling machine, and the audio module is coupled to the information-handling machine. The establishment of the cryptographically secure communication may be at least partially facilitated by a mutually trusted module.
G06F 21/57 - Certifying or maintaining trusted computer platforms, e.g. secure boots or power-downs, version controls, system software checks, secure updates or assessing vulnerabilities
This disclosure describes systems, methods, and devices related to NAV timeout. A device may transmit, during a transmission opportunity (TxOP), an initial control frame (ICF) trigger frame including user information fields identifying one or more target stations (STAs). The device may receive from the one or more target STAs, an initial control response (ICR) frame, wherein the ICR frame includes feedback information and padding. The device may calculate a network allocation vector (NAV) timeout period based on a transmission time of a maximum-sized ICR frame at a lowest transmission rate. The device may adjust NAV settings based on the NAV timeout period.
A legacy virtual machine (a virtual machine not operating in a secure environment) can be converted to a confidential virtual machine (a virtual that operates in a secure environment) on the fly, with little downtime experienced by the legacy virtual machine (VM) owner. A legacy VM operating either on a legacy platform (a platform not having confidential computing capabilities) or a confidential computing-capable platform can be converted to a confidential VM (CVM). The legacy VM can be migrated to another computing device as part of the conversion or be converted into a CVM that executes on the same computing device on which the legacy VM was running. A trusted security module can be responsible for starting a VM-to-CVM conversion session, validating the state of legacy virtual machine to be converted, provision a CVM with the state of the legacy virtual machine, and end a VM-to-CVM conversion session.
Write filter hardware is provided with circuitry to receive a signal to switch the write filter from a disabled state to an enabled state for a given range of addresses in a shared memory. A write attempt by a host processor to the range of addresses is identified, where access to the shared memory is shared with an accelerator device. The write filter hardware causes the write attempt to be dropped when the hardware write filter is in the enabled state for the given range of addresses.
Techniques are disclosed to implement a mathematical framework to model a mechanical actuator such as robotic arm and compute the differential kinematics of an end effector represented by a circle in a three-dimensional space, described as a bi-vector of conformal geometric algebra. Additionally, by using a circle to describe the grasping pose on the object, a differential kinematics-based control scheme is implemented to guide the actuator and minimize the error between the end effector circle and the target circle. The circle has 3 degrees of freedom for the center, two degrees for the orientation, and one more for the radius, which may be used to describe the end effector pose, with the differential kinematics-based control scheme law adjusting the position and the orientations simultaneously.
Key-value (KV) caching accelerates inference in large language models (LLMs) by allowing the attention operation to scale linearly rather than quadratically with the total sequence length. Due to large context lengths in modern LLMs, KV cache size can exceed the model size, which can negatively impact throughput. To address this issue, KVCrush, which stands for KEY-VALUE CACHE SIZE REDUCTION USING SIMILARITY IN HEAD-BEHAVIOR, is implemented. KVCrush involves using binary vectors to represent tokens, where the vector indicates which attention heads attend to the token and which attention heads disregard the token. The binary vectors are used in a hardware-efficient, low-overhead process to produce representatives for unimportant tokens to be pruned, without having to implement k-means clustering techniques.
Systems, apparatus, articles of manufacture, and methods are disclosed to utilize large language artificial intelligence models to convert computer code. An example apparatus includes instructions and processor circuitry to execute the instructions to at least: train a large language model based on a computer instructions repository that includes code of a first type; utilize the large language model to convert an input set of instructions of the first type into output code of a second type; cause execution of the output code; determine if the execution is successful; and when the execution is not successful, utilize the output code for fine-tuning training of the large language model with incorrect data.
This disclosure describes systems, methods, and devices related to KEK frame encryption. A device may identify, within a received authentication frame, a capability bit in a Robust Security Network Extension Element (RSNXE) indicating peer device support for Key Encryption Key (KEK) derivation during an authentication frame exchange. The device may derive the KEK during the authentication frame exchange based on mutual support for KEK derivation and derivation of a Pairwise Transient Key Security Association (PTKSA) during the exchange. The device may use a cryptographic key protection process for deriving the KEK. The device may encrypt a portion of the authentication frame using the derived KEK.
Examples described herein relate to performing source routing of a packet to route the packet from a source to a destination through multiple routers by specification of a path of logical port identifiers through the multiple routers. In some examples, multiple routers are to translate the logical port identifiers into physical ports based on configurations. In some examples, the path of the packet through the multiple routers is based on a topology of the routers.
Methods and apparatus for DDR5 DIMM power fail monitor to prevent I/O reverse-bias current. An apparatus is configured to be implemented in a host system including a processor having an integrated memory controller (iMC) coupled to one or more DIMMs having an onboard Power Management Integrated Circuit (PMIC). The apparatus includes circuitry to monitor an operating state for a host voltage regulator (VR) providing input power to the processor and monitor an operating state of the PMIC for each of the one or more DIMMs. In response to detecting a fault condition of the host VR or a PMIC for a DIMM, the apparatus prevents reverse bias voltage in circuitry in at least one of the iMC and the one or more DIMMs. The apparatus may implement a finite state machine (FSN) having a plurality of defined states including a fault state used to indicate detection of the fault condition.
Examples described herein relate to processing packets. In some examples, based on receipt of a Hypertext Transfer Protocol (HTTP) packet at a network interface device, the HTTP packet comprising an HTTP body and HTTP header: provide the HTTP header, but not the HTTP body, for processing in user space; modify solely the HTTP header in user space; and in kernel space, combine the modified HTTP header and the HTTP body prior to transmission of the HTTP packet with modified HTTP header to a client.
In one embodiment, an apparatus comprises a log circuit to: identify an input associated with a logarithm operation, wherein the logarithm operation is to be performed by the log circuit using piecewise linear approximation; identify a first range that the input falls within, wherein the first range is identified from a plurality of ranges associated with a plurality of piecewise linear approximation (PLA) equations for the logarithm operation, and wherein the first range corresponds to a first equation of the plurality of PLA equations; compute a result of the first equation based on a plurality of operands associated with the first equation; and return an output associated with the logarithm operation, wherein the output is generated based at least in part on the result of the first equation.
In one embodiment, a matrix processor comprises a memory to store a matrix operand and a strided read sequence, wherein: the matrix operand is stored out of order in the memory; and the strided read sequence comprises a sequence of read operations to read the matrix operand in a correct order from the memory. The matrix processor further comprises circuitry to: receive a first instruction to be executed by the matrix processor, wherein the first instruction is to instruct the matrix processor to perform a first operation on the matrix operand; read the matrix operand from the memory based on the strided read sequence; and execute the first instruction by performing the first operation on the matrix operand.
Embodiments are directed to providing integrity-protected command buffer execution. An embodiment of an apparatus includes a computer-readable memory comprising one or more command buffers and a processing device communicatively coupled to the computer-readable memory to read, from a command buffer of the computer-readable memory, a first command received from a host device, the first command executable by one or more processing elements on the processing device, the first command comprising an instruction and associated parameter data, compute a first authentication tag using a cryptographic key associated with the host device, the instruction and at least a portion of the parameter data, and authenticate the first command by comparing the first authentication tag with a second authentication tag computed by the host device and associated with the command.
H04L 9/32 - Arrangements for secret or secure communicationsNetwork security protocols including means for verifying the identity or authority of a user of the system
A component of a computing system, including: processor circuitry; and a non-transitory computer-readable storage medium including instructions that, when executed by the processor circuitry, cause the processor circuitry to: dynamically monitor runtime metrics across processor cores of the computing system, wherein the runtime metrics comprise a measure of system-critical task residency and a measure of user-critical foreground application utilization; and initiate a power optimization action configured to transition the computing system into a power efficiency mode when the system-critical task residency is below a system-critical task residency threshold and the user-critical foreground application utilization is below a user-critical foreground application utilization threshold.
Systems, apparatus, articles of manufacture, and methods are disclosed to dynamically manage input/output (I/O) transactions. An example apparatus includes circuitry to determine at least one of a first parameter assigned to an VO transaction by a user, a second parameter for the I/O transaction based on at least a class of an I/O device, or a third parameter for the I/O transaction based on a usage pattern for a compute device coupled to the I/O device. Additionally, the example apparatus includes parameter management circuitry to determine a dynamic parameter to assign to the I/O transaction based on at least one of the first parameter, the second parameter, or the third parameter and cause scheduler circuitry to at least one of adjust a default bandwidth to be allocated to the I/O transaction based on the dynamic parameter or adjust a latency associated with the I/O transaction based on the dynamic parameter.
Systems, apparatus, articles of manufacture, and methods to save power during conference calls are disclosed. An example first client device includes interface circuitry; machine readable instructions; and at least one processor circuit to at least one of instantiate or execute the machine readable instructions to: determine whether a first attendee of a conference call is absent from the first client device; and cause transmission of a notification to at least one of a server for the conference call or a second client device associated with the conference call and different from the first client device, the notification to cause the second client device to change an operating state associates with the conference call.
Disclosed herein are methods for fabricating IC structures that include stacked vias providing electrical connectivity between metal lines of different layers of a metallization stack, as well as resulting IC structures. An example IC structure includes a first and a second metallization layers, including, respectively, a bottom metal line and a top metal line. The IC structure further includes a via that has a bottom via portion and a top via portion, where the top via portion is stacked over the bottom via portion (hence, the via may be referred to as a “stacked via”). The bottom via portion is coupled and self-aligned to the bottom electrically conductive line, while the top via portion is coupled and self-aligned to the top electrically conductive line. The bottom via portion is formed using selective growth, e.g., assisted by a self-assembled monolayer (SAM) material.
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 23/528 - Layout of the interconnection structure
79.
PACKAGE SUBSTRATES WITH COMPONENTS INCLUDED IN CAVITIES OF GLASS CORES
Package substrates with components included in cavities of glass cores are disclosed. An example apparatus includes: a glass core having a first through-hole and a second through-hole, the first through-hole spaced apart from and smaller than the second through-hole; and a conductive material within the first through-hole, the conductive material to extend a full length of the first through-hole. The example apparatus further includes a dielectric material within the second through-hole, the dielectric material between an electronic component within the second through-hole and a sidewall of the second through-hole.
Package substrates with components included in cavities of glass cores are disclosed. An example apparatus includes: a glass layer having an opening between opposing first and second surfaces of the glass layer; an electronic component within the opening; a dielectric material within the opening between the electronic component and a sidewall of the opening; and a through-glass via including a conductive material that extends through the glass layer.
Package substrates with components included in cavities of glass cores are disclosed. An example apparatus includes: a glass layer having a first hole and a second hole, the second hole larger than an electronic component disposed therein, a width of the electronic component larger than a width of the first hole. The example apparatus further includes a conductive material that substantially fills the first hole; and a dielectric material that substantially fills a space within the second hole surrounding the electronic component.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
82.
MICROELECTRONIC ASSEMBLIES INCLUDING INTERCONNECTS WITH DIFFERENT SOLDER MATERIALS
Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die, having a first surface and an opposing second surface, in a first layer; a redistribution layer (RDL) on the first layer, wherein the RDL includes conductive vias having a greater width towards a first surface of the RDL and a smaller width towards an opposing second surface of the RDL; wherein the first surface of the RDL is electrically coupled to the second surface of the first die by first solder interconnects having a first solder; and a second die in a second layer on the RDL, wherein the second die is electrically coupled to the RDL by second solder interconnects having a second solder, wherein the second solder is different than the first solder.
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
Disclosed herein are via plug resistors for incorporation into electronic substrates, and related methods and devices. Exemplary via plug resistor structures include a resistive element within and on a surface of a via extending at least partially through an electronic substrate and first and second electrodes coupled to the resistive element.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/00 - Details of semiconductor or other solid state devices
H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
H05K 1/16 - Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
Techniques related to adaptive quantization matrix selection using machine learning for video coding are discussed. Such techniques include applying a machine learning model to generate an estimated quantization parameter for a frame and selecting a set of quantization matrices for encode of the frame from a number of sets of quantization matrices based on the estimated quantization parameter.
H04N 19/149 - Data rate or code amount at the encoder output by estimating the code amount by means of a model, e.g. mathematical model or statistical model
H04N 19/172 - Methods or arrangements for coding, decoding, compressing or decompressing digital video signals using adaptive coding characterised by the coding unit, i.e. the structural portion or semantic portion of the video signal being the object or the subject of the adaptive coding the unit being an image region, e.g. an object the region being a picture, frame or field
Voice anonymization systems and methods are provided. Voice anonymization is done on the speaker's computing device and can prevent voice theft. The voice anonymization systems and methods are lightweight and run efficiently in real time on a computing device, allowing for speaker anonymity without diminishing system performance during a teleconference or VoIP meeting. The anonymization system outputs a transformed speaker voice. The anonymization system can also generate a voice embedding that can be used to reconstruct the original speaker voice. The voice embedding can be encrypted and transmitted to another device. Sometimes, the voice embedding is not transmitted and the listener receives the anonymized voice. Systems and methods are provided for the detection of voice transformations in received audio. Thus, a listener can be informed whether the speaker voice output from the listener's computing device is the original speaker's voice or a transformed version of the original speaker voice.
G06F 21/62 - Protecting access to data via a platform, e.g. using keys or access control rules
G10L 15/02 - Feature extraction for speech recognitionSelection of recognition unit
G10L 21/007 - Changing voice quality, e.g. pitch or formants characterised by the process used
G10L 25/30 - Speech or voice analysis techniques not restricted to a single one of groups characterised by the analysis technique using neural networks
A memory subsystem performs error correction through erasure decoding instead of ECC (error correction code) polynomial computation. An error correction module of the memory controller receives a data word and calculates a syndrome using the data word. The error correction module generates multiple correctable error pattern candidates for bounded fault regions based on erasure decoding. The error correction module selects one correctable error pattern candidate to apply error correction.
Systems, apparatus, articles of manufacture, and methods are disclosed to estimate a pose of a head of a user of an electronic device. An example apparatus to estimate a head pose includes at least one processor circuit to be programmed by instructions to: identify a plurality of facial landmarks in a plurality of images; identify initial image data based on the plurality of facial landmarks; augment the initial image data with a transformation operation; and train a neural network based on the initial image data and the augmented image data to: infer three-dimensional model parameters; and infer a confidence metric.
Memory bit cells having internal node jumpers are described. In an example, an integrated circuit structure includes a memory bit cell on a substrate. The memory bit cell includes first and second gate lines parallel along a second direction of the substrate. The first and second gate lines have a first pitch along a first direction of the substrate, the first direction perpendicular to the second direction. First, second and third interconnect lines are over the first and second gate lines. The first, second and third interconnect lines are parallel along the second direction of the substrate. The first, second and third interconnect lines have a second pitch along the first direction, where the second pitch is less than the first pitch. One of the first, second and third interconnect lines is an internal node jumper for the memory bit cell.
H01L 23/528 - Layout of the interconnection structure
H01L 23/535 - Arrangements for conducting electric current within the device in operation from one component to another including internal interconnections, e.g. cross-under constructions
H10B 10/00 - Static random access memory [SRAM] devices
Systems, apparatus, and methods for energy harvesting in data centers are disclosed. An example apparatus includes interface circuitry; machine-readable instructions; and at least one processor circuit to at least one of instantiate or execute the machine-readable instructions to estimate first power consumption values for electronic components of a first rack; estimate second power consumption values for electronic components of a second rack; determine a first selection score for the first rack based on the first power consumption values and a second selection score for the second rack based on the second power consumption values; select a first electronic component of the first rack or a second electronic component of the second rack to receive a workload based on the first selection score and the second selection score; and cause the selected one of the first electronic component or the second electronic component to perform the workload.
Methods, apparatus, systems and articles of manufacture are disclosed to map workloads. An example apparatus includes a constraint definer to define performance characteristic targets of the neural network, an action determiner to apply a first resource configuration to candidate resources corresponding to the neural network, a reward determiner to calculate a results metric based on (a) resource performance metrics and (b) the performance characteristic targets, and a layer map generator to generate a resource mapping file, the mapping file including respective resource assignments for respective corresponding layers of the neural network, the resource assignments selected based on the results metric.
A foundation layer and methods of forming a conductive via are described. A die pad is formed over a die. A seed layer is deposited over the die pad and the foundation layer. A first photoresist layer is deposited over the seed layer, and the first layer is patterned to form a conductive line opening over the die pad. A conductive material is deposited into the conductive line opening to form a conductive line. A second photoresist layer is deposited over the first layer, and the second layer is patterned to form a via opening over the conductive line. The conductive material is deposited into the via opening to form the conductive via, where the conductive material only deposits on portions of exposed conductive line. The second and first layers are removed. Portions of exposed seed layer are recessed, and then a top surface of the conductive via is exposed.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 23/00 - Details of semiconductor or other solid state devices
92.
METHODS AND APPARATUS FOR REGION-OF-INTEREST (ROI) CROPPING
Systems, apparatus, articles of manufacture, and methods are disclosed for high quality and low power dynamic region of interest (ROI) cropping. An example apparatus disclosed herein provides a first image to image signal processor (ISP) circuitry, the ISP circuitry to implement an image processing pipeline to process the first image. The example apparatus also downscales the first image to generate a second image having lower resolution than the first image and identifies a region of interest (ROI) in the second image. The example apparatus further provides coordinates of the ROI to the ISP circuitry, the ISP circuitry to crop the first image based on the coordinates and to output a third image based on the cropped first image.
Examples described herein relate to a timing source. In some examples, the timing source generates a clock signal by synchronization with a second clock signal from a crystal source and subsequent synchronization with a third clock signal. In some examples, the third clock signal is synchronized to timing signals received in Ethernet packets. In some examples, the crystal source is to provide the second clock signal to the circuitry via the interface.
Examples described herein relate to hot page detection. Some examples include circuitry to provide a number of pages with access counts within a bucket of a histogram, wherein the bucket of the histogram is associated with a configured access count range; based on a distribution of access counts in the histogram being a first level, reduce the configured access count ranges of the different buckets of the histogram; determine a second level indicative of page access counts; and migrate data of pages from a far memory to a near memory based on the second level.
This disclosure describes systems, methods, and devices related to enhanced AP scheduling. A device may transmit a schedule allocation frame during a transmission opportunity (TXOP), wherein the schedule allocation frame includes time allocation information for a plurality of shared access points (APs) or stations (STAs). The device may determine a time allocation for each shared AP or STA based on the information included in the schedule allocation frame. The device may adjust the transmission schedule of the TXOP to align with the determined time allocation for each shared AP or STA, wherein the AP does not set a network allocation vector (NAV) for its own BSS upon transmitting the schedule allocation frame. The device may initiate a transmission from shared APs or STAs during respective time allocations within the TXOP.
This disclosure describes systems, methods, and devices related to extended enhanced multi-link single-radio (EMLSR) with more than two links. A multi-link device may send, to a second multi-link device, an indication that the multi-link device supports an extended enhanced multi-link single-radio (EMLSR) mode using a first enhanced EMLSR link, a second EMLSR link, and an auxiliary EMLSR link; identify a time when at least one of the first EMLSR link or the second EMLSR link are busy due to overlapping basic service set (OBSS) traffic; initiate, during the time, a transmit opportunity on the auxiliary EMLSR link; and cause to send one or more frames to the second multi-link device using the auxiliary EMLSR link during the time.
Systems, apparatus, articles of manufacture, and methods are disclosed to manage network notifications. An example apparatus includes interface circuitry, machine-readable instructions, and at least one processor circuit to be programmed by the machine-readable instructions to cause transmission of a first signal based on a packet, the first signal including characteristics of the packet, and cause transmission of a second signal after the first signal, the second signal including a payload of the packet.
This disclosure describes systems, methods, and devices related to enhanced memory integration. The device may include a compute chiplet configured as a System-on-a-Chip (SoC). The device may include a logic die circuitry coupled to the compute chiplet through a high-speed link. The device may include a memory interface that connects the logic die circuitry to on-package memory. The device may include control circuitry within the logic die circuitry configured to treat the on-package memory as a memory-side cache for an off-package memory. The device may dynamically migrate memory pages between the on-package memory and the off-package memory based on memory access patterns. The device may facilitate efficient data management, optimize memory utilization, and support scalable memory architectures for improved performance.
For example, a non Access Point (AP) (non-AP) Multi-Link Device (MLD) may process a multi-link processing delay value in a first frame from an AP MLD to identify a multi-link processing delay time for the AP MLD; transmit a second frame from a first non-AP station (STA) affiliated with the non-AP MLD to the AP MLD over a first link, the second frame including a multi-link power management field to change a power management mode for at least one second non-AP STA from a first power management mode to a second power management mode, wherein the at least one second non-AP STA is affiliated with the non-AP MLD and is operative over at least one second link with the AP MLD; and change the power management mode for the at least one second non-AP STA based on the multi-link processing delay time for the AP MLD.
A method and system for implementing a virtual trusted platform module (vTPM). Software components are sequentially loaded and measured from a core root of trust for measurement (CRTM) in a user confidential virtual machine (CVM). The measurements of the software components are recorded in a runtime measurement register (RTMR) log and a digest of each entry of the RTMR log is extended into an RTMR configured for the user CVM. A signed quote and corresponding measurement entries of the RTMR log are provided to a verifier. The signed quote includes a value of the RTMR. A state of the user CVM may be verified based on the RTMR value and the RTMR log entries. The measurement entries of the RTMR log may be replayed to calculate platform configuration register (PCR) values and the TCG event log may be verified using the PCR values.
G06F 21/57 - Certifying or maintaining trusted computer platforms, e.g. secure boots or power-downs, version controls, system software checks, secure updates or assessing vulnerabilities
