SUBSTRATE WITH CONDUCTIVE FILM, SUBSTRATE WITH MULTILAYER REFLECTIVE FILM, REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
G03F 1/40 - Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
Provided is a conductive film-equipped substrate capable of inhibiting deformation of a mask substrate caused by stress change in a conductive film even when a reflective mask manufactured by applying the conductive film-equipped substrate is exposed to an exposure environment. The conductive film-equipped substrate has: a substrate having a first main surface; and a conductive film that is formed on the first main surface and contains hydrogen. The conductive film is a single layer film or a lamination film including a lower layer and an upper layer formed on the lower layer. The single layer film and the lower layer contain a metal, and nitrogen or boron. The upper layer contains a metal and oxygen. When an analysis of the conductive film is conducted in an arbitrarily defined 124 μm square region within a 5 cm square including the center of the substrate by the dynamic secondary ion mass spectrometry under conditions in which the primary ion species is Cs+, the primary acceleration voltage is 3.0 kV, and the primary ion current is 25 nA, the secondary ion intensity of detected hydrogen is 1.0×102 cps or more.
C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
G01N 27/62 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the ionisation of gases, e.g. aerosolsInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electric discharges, e.g. emission of cathode
G03F 1/38 - Masks having auxiliary features, e.g. special coatings or marks for alignment or testingPreparation thereof
3.
SUBSTRATE WITH CONDUCTIVE FILM, SUBSTRATE WITH MULTILAYER REFLECTIVE FILM, REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Provided is a substrate with a conductive film, said substrate being able to be securely attached to an electrostatic chuck and easily detached from the electrostatic chuck. This substrate with a conductive film is obtained by providing a conductive film on a first main surface of a substrate. The crystallite size of the conductive film is 2.5 nm or more, said crystallite size being calculated from a diffraction angle 2θmax at which, with the diffraction angle 2θ in the range of 30° to 90°, the diffraction intensity obtained by 2θ/ω measurement (ω is the angle of incidence of X-rays in X-ray diffraction measurement) using X-ray diffraction is maximised.
G03F 1/40 - Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
An object is to provide a mask blank
An object is to provide a mask blank
A mask blank having a substrate and a thin film, the substrate includes two main surfaces and a side surface with a chamfered surface provided between the two main surfaces and the side surface, one main surface of the two main surfaces includes an inner region including a center of the main surface and an outer peripheral region outside of the inner region, the thin film is provided on the inner region of the main surface, the surface reflectance Rs of the outer peripheral region with respect to light of 400 nm to 700 nm wavelength is 10% or less, and provided that Rf is the surface reflectance with respect to light of 400 nm to 700 nm wavelength in one section among sections of the thin film in the range of 9 nm to 10 nm film thickness, the contrast ratio (Rf/Rs) is 3.0 or more.
A purpose of the present invention is to provide a mask blank wherein the boundary between a region where a thin film is formed and a region where the thin film is not formed is easily visually recognized, and the position of a masking plate is easily adjusted, said masking plate being provided to a sputtering device that forms the thin film. A mask blank that comprises a substrate and a thin film, and is characterized in that the substrate has two main surfaces and a side surface, chamfer surfaces are provided between the two main surfaces and the side surface, one main surface among the two main surfaces has an inside region including the center of said main surface, and a peripheral region to the outside of the inside region, the thin film is provided on the inside region of said main surface, the surface reflectance Rs of the peripheral region with regard to 400 nm- to 700 nm-wavelength light is 10% or less, and the contrast ratio (Rf/Rs) is 3.0 or greater, where Rf is the surface reflectance with regard to 400 nm- to 700 nm-wavelength light in one location among locations where the thickness of the thin film is within the range 9 nm to 10 nm.
A mask blank that includes a thin film made of a material containing silicon and nitrogen for forming a transfer pattern on a transparent substrate. In conducting an X-ray photoelectron spectroscopy on a plurality of measurement locations in an inner region, which is a region excluding a vicinity region and a surface layer region of the thin film, in order to acquire an average value PSi_fi_av of maximum peaks PSi_fi of photoelectron intensity of Si2p narrow spectrum and conducting an X-ray photoelectron spectroscopy on a plurality of measurement locations in the transparent substrate to acquire an average value PSi_sb_av of maximum peaks PSi_sb of photoelectron intensity of Si2p narrow spectrum, (PSi_fi_av)/(PSi_sb_av) is 1.08 or more.
Provided are a mask blank, a method for manufacturing a transfer mask, and a method for manufacturing a semiconductor device, with which it is possible to minimize the incidence of surface roughness in a translucent substrate when EB defect correction is performed, and with which it is possible to minimize the incidence of spontaneous etching in the pattern of a light-blocking film. The present invention comprises a light-blocking film for forming a transfer pattern on a translucent substrate, the light-blocking film being formed from a material comprising silicon and nitrogen, or a material that further includes at least one element selected from among metalloid elements and non-metallic elements. The ratio obtained by dividing the number of Si3N4 bonds present in the internal region of the light-blocking film, excluding the region near the interface of the light-blocking film with the translucent substrate and the surface-layer region of the light-blocking film on the opposite side to the translucent substrate, by the total number of Si3N4 bonds, SiaNb bonds (b/[a+b] ឬ 4/7), and Si–Si bonds, is 0.04 or less, and the ratio obtained by dividing the number of SiaNb bonds present in the internal region of the light-blocking film by the total number of Si3N4 bonds, SiaNb bonds, and Si–Si bonds is 0.1 or greater.
This sputtering target has a molybdenum content of 3 mol% to 25 mol% and a silicon content of 75 mol% to 97 mol%. The sputtering target comprises a silicon phase in which the average particle diameter of the silicon particles is 2.0 µm or less and a molybdenum silicide phase in which the average particle diameter of the molybdenum silicide particles is 2.5 µm or less. The average number of holes with a major axis of at least 0.3 µm that are present in the silicon phase is no more than 10 in a 90 µm x 125 µm area.
Provided is a mask blank of which the correction rate of EB defect correction is sufficiently fast even when a thin film for forming a transfer pattern is formed with an SiN material, and the ratio of correction rate for EB defect correction between a translucent substrate and itself is sufficiently high. A mask blank provided with a thin film for forming, on a translucent substrate, a transfer pattern formed with a material containing silicon and nitrogen, characterized in that when X-ray photoelectron spectrometry is performed on a plurality of measurement spots in an internal area of the thin film except a near-field area and a surface area to acquire an average value PSi_fi_av of the maximum peak PSi_fi of photoelectron intensity of an Si2p narrow spectrum, and X-ray photoelectron spectrometry is performed on a plurality of measurement spots of the translucent substrate to acquire an average value PSi_sb_av of the maximum peak PSi_sb of photoelectron intensity of an Si2p narrow spectrum, (PSi_fi_av)/(PSi_sb_av) is 1.08 or greater.
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