Abstract

Provided is a substrate with a conductive film, said substrate being able to be securely attached to an electrostatic chuck and easily detached from the electrostatic chuck. This substrate with a conductive film is obtained by providing a conductive film on a first main surface of a substrate. The crystallite size of the conductive film is 2.5 nm or more, said crystallite size being calculated from a diffraction angle 2θmax at which, with the diffraction angle 2θ in the range of 30° to 90°, the diffraction intensity obtained by 2θ/ω measurement (ω is the angle of incidence of X-rays in X-ray diffraction measurement) using X-ray diffraction is maximised.

IPC Classes  ?

• G03F 1/24 - Reflection masksPreparation thereof
• G03F 1/40 - Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
• G03F 7/20 - ExposureApparatus therefor

Abstract

An object is to provide a mask blank An object is to provide a mask blank A mask blank having a substrate and a thin film, the substrate includes two main surfaces and a side surface with a chamfered surface provided between the two main surfaces and the side surface, one main surface of the two main surfaces includes an inner region including a center of the main surface and an outer peripheral region outside of the inner region, the thin film is provided on the inner region of the main surface, the surface reflectance Rs of the outer peripheral region with respect to light of 400 nm to 700 nm wavelength is 10% or less, and provided that Rf is the surface reflectance with respect to light of 400 nm to 700 nm wavelength in one section among sections of the thin film in the range of 9 nm to 10 nm film thickness, the contrast ratio (Rf/Rs) is 3.0 or more.

IPC Classes  ?

• G03F 1/32 - Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portionPreparation thereof
• G03F 1/24 - Reflection masksPreparation thereof
• G03F 1/60 - Substrates
• G03F 1/80 - Etching

Abstract

A purpose of the present invention is to provide a mask blank wherein the boundary between a region where a thin film is formed and a region where the thin film is not formed is easily visually recognized, and the position of a masking plate is easily adjusted, said masking plate being provided to a sputtering device that forms the thin film.　A mask blank that comprises a substrate and a thin film, and is characterized in that the substrate has two main surfaces and a side surface, chamfer surfaces are provided between the two main surfaces and the side surface, one main surface among the two main surfaces has an inside region including the center of said main surface, and a peripheral region to the outside of the inside region, the thin film is provided on the inside region of said main surface, the surface reflectance Rs of the peripheral region with regard to 400 nm- to 700 nm-wavelength light is 10% or less, and the contrast ratio (Rf/Rs) is 3.0 or greater, where Rf is the surface reflectance with regard to 400 nm- to 700 nm-wavelength light in one location among locations where the thickness of the thin film is within the range 9 nm to 10 nm.

IPC Classes  ?

• G03F 1/32 - Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portionPreparation thereof
• G03F 1/54 - Absorbers, e.g. opaque materials

Abstract

A mask blank that includes a thin film made of a material containing silicon and nitrogen for forming a transfer pattern on a transparent substrate. In conducting an X-ray photoelectron spectroscopy on a plurality of measurement locations in an inner region, which is a region excluding a vicinity region and a surface layer region of the thin film, in order to acquire an average value PSi_fi_av of maximum peaks PSi_fi of photoelectron intensity of Si2p narrow spectrum and conducting an X-ray photoelectron spectroscopy on a plurality of measurement locations in the transparent substrate to acquire an average value PSi_sb_av of maximum peaks PSi_sb of photoelectron intensity of Si2p narrow spectrum, (PSi_fi_av)/(PSi_sb_av) is 1.08 or more.

IPC Classes  ?

• G03F 1/32 - Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portionPreparation thereof
• G03F 7/20 - ExposureApparatus therefor

Abstract

3434abab34abb bonds, and Si–Si bonds is 0.1 or greater.

IPC Classes  ?

• G03F 1/32 - Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portionPreparation thereof
• G03F 1/54 - Absorbers, e.g. opaque materials
• G03F 1/74 - Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
• G03F 7/20 - ExposureApparatus therefor

Abstract

Provided are a mask blank, a method for manufacturing a transfer mask, and a method for manufacturing a semiconductor device, with which it is possible to minimize the incidence of surface roughness in a translucent substrate when EB defect correction is performed, and with which it is possible to minimize the incidence of spontaneous etching in the pattern of a light-blocking film. The present invention comprises a light-blocking film for forming a transfer pattern on a translucent substrate, the light-blocking film being formed from a material comprising silicon and nitrogen, or a material that further includes at least one element selected from among metalloid elements and non-metallic elements. The ratio obtained by dividing the number of Si3N4 bonds present in the internal region of the light-blocking film, excluding the region near the interface of the light-blocking film with the translucent substrate and the surface-layer region of the light-blocking film on the opposite side to the translucent substrate, by the total number of Si3N4 bonds, SiaNb bonds (b/[a+b] ឬ 4/7), and Si–Si bonds, is 0.04 or less, and the ratio obtained by dividing the number of SiaNb bonds present in the internal region of the light-blocking film by the total number of Si3N4 bonds, SiaNb bonds, and Si–Si bonds is 0.1 or greater.

IPC Classes  ?

• G03F 1/54 - Absorbers, e.g. opaque materials
• G03F 1/50 - Mask blanks not covered by groups Preparation thereof
• G03F 7/20 - ExposureApparatus therefor

Abstract

This sputtering target has a molybdenum content of 3 mol% to 25 mol% and a silicon content of 75 mol% to 97 mol%. The sputtering target comprises a silicon phase in which the average particle diameter of the silicon particles is 2.0 µm or less and a molybdenum silicide phase in which the average particle diameter of the molybdenum silicide particles is 2.5 µm or less. The average number of holes with a major axis of at least 0.3 µm that are present in the silicon phase is no more than 10 in a 90 µm x 125 µm area.

IPC Classes  ?

• C23C 14/34 - Sputtering
• B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
• B22F 3/14 - Both compacting and sintering simultaneously
• B22F 3/15 - Hot isostatic pressing
• C01B 33/02 - Silicon
• C01B 33/06 - Metal silicides
• C22C 27/04 - Alloys based on tungsten or molybdenum

Abstract

Provided is a mask blank of which the correction rate of EB defect correction is sufficiently fast even when a thin film for forming a transfer pattern is formed with an SiN material, and the ratio of correction rate for EB defect correction between a translucent substrate and itself is sufficiently high. A mask blank provided with a thin film for forming, on a translucent substrate, a transfer pattern formed with a material containing silicon and nitrogen, characterized in that when X-ray photoelectron spectrometry is performed on a plurality of measurement spots in an internal area of the thin film except a near-field area and a surface area to acquire an average value PSi_fi_av of the maximum peak PSi_fi of photoelectron intensity of an Si2p narrow spectrum, and X-ray photoelectron spectrometry is performed on a plurality of measurement spots of the translucent substrate to acquire an average value PSi_sb_av of the maximum peak PSi_sb of photoelectron intensity of an Si2p narrow spectrum, (PSi_fi_av)/(PSi_sb_av) is 1.08 or greater.

IPC Classes  ?

• G03F 1/54 - Absorbers, e.g. opaque materials
• G03F 1/32 - Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portionPreparation thereof
• G03F 1/72 - Repair or correction of mask defects
• H01L 21/3065 - Plasma etchingReactive-ion etching