A thermal processing system for performing thermal processing can include a workpiece support plate configured to support a workpiece and heat source(s) configured to heat the workpiece. The thermal processing system can include one or more domed window(s) disposed between the workpiece support plate and the one or more heat sources. The system includes a temperature measurement configured to generate data indicative of a temperature of the workpiece. The system includes a gas delivery system configured to flow a process gas over the workpiece.
F27B 17/00 - Furnaces of a kind not covered by any of groups
F27D 5/00 - Supports, screens or the like for the charge within the furnace
F27D 7/02 - Supplying steam, vapour, gases or liquids
F27D 11/00 - Arrangement of elements for electric heating in or on furnaces
G01J 5/00 - Radiation pyrometry, e.g. infrared or optical thermometry
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Plasma processing apparatus for processing a workpiece are provided. In one example embodiment, a plasma processing apparatus for processing a workpiece includes a processing chamber, a plasma chamber separated from the processing, and an inductively coupled plasma source configured to generate a plasma in the plasma chamber. The apparatus includes a pedestal disposed within the processing chamber configured to support a workpiece. The apparatus includes an insert disposed in the plasma chamber movable to one or more vertical positions within the plasma chamber. Methods for processing of workpieces are also provided.
A thermal processing system for performing thermal processing can include a workpiece support plate configured to support a workpiece and heat source(s) configured to heat the workpiece. The thermal processing system can include one or more domed window(s) disposed between the workpiece support plate and the one or more heat sources. The system includes a temperature measurement configured to generate data indicative of a temperature of the workpiece. The system includes a gas delivery system configured to flow a process gas over the workpiece.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Cooling systems and methods for plasma sources used in semiconductor fabrication are provided. In one example, the plasma source includes an induction coil about a dielectric tube. The plasma processing apparatus further includes a Faraday shield located between the induction coil and the dielectric tube. The Faraday shield includes a plurality of Faraday shield slits. The plasma processing apparatus further includes a plasma source cooling system including a manifold. The manifold includes a plurality of nozzles, each nozzle configured to supply cooling fluid onto a surface of the dielectric tube through one of the Faraday shield slits of the plurality of Faraday shield slits.
Cooling systems and methods for plasma sources used in semiconductor fabrication are provided. In one example, the plasma source includes an induction coil about a dielectric tube. The plasma processing apparatus further includes a Faraday shield located between the induction coil and the dielectric tube. The Faraday shield includes a plurality of Faraday shield slits. The plasma processing apparatus further includes a plasma source cooling system including a manifold. The manifold includes a plurality of nozzles, each nozzle configured to supply cooling fluid onto a surface of the dielectric tube through one of the Faraday shield slits of the plurality of Faraday shield slits.
A plasma source array is provided. The plasma source array includes a plurality of hybrid plasma sourcelets disposed on a base plate. Each hybrid sourcelet includes a dielectric tube having an inner area and an outer surface; an inductively coupled plasma source for generating a inductively coupled plasma disposed proximate to the outer surface of the dielectric tube; a capacitively coupled plasma source for generating a capacitively coupled plasma disposed within the inner area of the dielectric tube; and a gas injection system configured to supply one or more process gases to the inner area of the dielectric tube. Plasma processing apparatuses incorporating the plasma source array and methods of use are also provided.
An electrostatic chuck including a workpiece support surface, clamping layer, heating layer, thermal control system, and sealing band is disclosed. The sealing band surrounds an outer perimeter of the electrostatic chuck including at least a portion of the workpiece surface. The sealing band has a width greater than about 3 millimeters (mm) up to about 10 mm. Plasma processing apparatuses and systems incorporating the electrostatic chuck are also provided.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A gas delivery system for a thermal processing apparatus is disclosed. The gas delivery system includes a cover plate and a distribution plate extending axially between a first surface and a second surface, the first and second surfaces extending perpendicular to the axial direction, the distribution plate having a distribution area comprising plurality of holes extending axially therethrough. The gas delivery system includes one or more collars coupled axially between the cover plate and the distribution plate, the collar, the cover plate, and the distribution plate together defining an interior chamber and a gas supply coupled to the collar to provide process gas from a gas source to the interior chamber. The total area of the holes is from about 0.1% to about 0.9% of a total area of the distribution area on the distribution plate. Thermal processing apparatuses and methods of use are also provided.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
9.
GAS DELIVERY SYSTEM FOR A THERMAL PROCESSING APPARATUS
A gas delivery system for a thermal processing apparatus is disclosed. The gas delivery system includes a cover plate and a distribution plate extending axially between a first surface and a second surface, the first and second surfaces extending perpendicular to the axial direction, the distribution plate having a distribution area comprising plurality of holes extending axially therethrough. The gas delivery system includes one or more collars coupled axially between the cover plate and the distribution plate, the collar, the cover plate, and the distribution plate together defining an interior chamber and a gas supply coupled to the collar to provide process gas from a gas source to the interior chamber. The total area of the holes is from about 0.1% to about 0.9% of a total area of the distribution area on the distribution plate. Thermal processing apparatuses and methods of use are also provided.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Disclosed is a plasma processing apparatus including a processing chamber and a workpiece support disposed in the processing chamber configured to support a workpiece during processing. The apparatus includes a hollow cathode disposed in the processing chamber that is configured to produce a plasma in the processing chamber. The hollow cathode is disposed adjacent to a perimeter of the workpiece support and the workpiece. The apparatus includes a gas distribution system configured to provide process gas to the processing chamber. Methods for processing workpieces are also disclosed.
Disclosed is a plasma processing apparatus including a processing chamber and a workpiece support disposed in the processing chamber configured to support a workpiece during processing. The apparatus includes a hollow cathode disposed in the processing chamber that is configured to produce a plasma in the processing chamber. The hollow cathode is disposed adjacent to a perimeter of the workpiece support and the workpiece. The apparatus includes a gas distribution system configured to provide process gas to the processing chamber. Methods for processing workpieces are also disclosed.
A control system operable to train a control tuner to generate temperature setpoint tracking improvements for a thermal processing system is provided. In one example implementation, temperature setpoint tracking improvements are achieved by generating system controller parameter adjustments based on a difference between a simulated workpiece temperature estimate and an actual workpiece temperature estimate. For example, a system model can generate a simulated workpiece temperature estimate simulating an actual workpiece temperature estimate, and based on the difference between the simulated and actual workpiece temperature estimates, generate clone controller parameter adjustments. The clone controller parameter adjustments can be used to generate system controller parameter adjustments, which can improve temperature setpoint tracking for the thermal processing system.
G05B 19/4155 - Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by programme execution, i.e. part programme or machine function execution, e.g. selection of a programme
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Support plates and support structures for thermal processing systems to heat workpieces are provided. In one example, a thermal processing apparatus is provided that includes a plurality of heat sources, a rotatable support plate, and a support structure having a flexibility in the radial direction of the rotatable support plate that is greater than a flexibility in the azimuthal direction of the rotatable support plate. Also provided are support plates for supporting a workpiece in a thermal processing apparatus. The support plate can include a base defining a radial direction and an azimuthal direction and at least one support structure extending from the base having a flexibility in the radial direction of the base that is greater than a flexibility in the azimuthal direction of the base.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C23C 14/30 - Vacuum evaporation by wave energy or particle radiation by electron bombardment
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
14.
Atomic Layer Etch Process Using Plasma In Conjunction With A Rapid Thermal Activation Process
A process for etching a film layer on a semiconductor wafer is disclosed. The process is particularly well suited to etching carbon containing layers, such as hardmask layers, photoresist layers, and other low dielectric films. In accordance with the present disclosure, a reactive species generated from a plasma is contacted with a surface of the film layer. Simultaneously, the substrate or semiconductor wafer is subjected to rapid thermal heating cycles that increase the temperature past the activation temperature of the reaction in a controlled manner.
Provided is a plasma processing apparatus or system including a plasma chamber and an inductively coupled plasma source. A shielding device is disposed between the plasma chamber the inductively coupled plasma source. The shielding device includes a top annular portion, a bottom annular portion, and a plurality of thermal pads coupled to top annular portion and/or bottom annular portion with one or more retaining members. The one or more retaining members provide a compressive force to secure the one or more thermal pads against the outer surface of the dielectric wall. The plurality of thermal pads are configured to modulate a heat flux from the dielectric wall into the respective thermal pad. Methods of processing workpieces are also disclosed.
Provided is a temperature control method for semiconductor process, comprising: setting a first measurement point of a first point distribution in a first process device to measure a temperature in the first process device; and setting a second measurement point of a second point distribution in a second detection device to measure a target parameter; wherein the first point distribution comprises a concentric circle-shaped dot matrix with unequal radial spacings; and the second point distribution has a concentric circle-shaped dot matrix corresponding to the first point distribution.
Provided is an airflow control method for an air flotation cyclone operation of a low-pressure heat treatment device, comprising: arranging a pressure sensor in a process chamber of the low-pressure heat treatment device, and controlling a pressure of process gas in the process chamber to be 1 to 20 Torrs; controlling a flow rate of cyclone gas delivered toward a bottom surface of a tray of the low-pressure heat treatment device to be 0.5 to 1.5 L/min by flow control, and controlling accuracy to be within ±0.2 L/min; and adjusting the flow rate of the cyclone gas so that the tray and a semiconductor workpiece placed on an upper surface of the tray rotate together.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
18.
GAS DISTRIBUTION ELEMENT AND HEAT TREATMENT DEVICE CONTAINING THE SAME
Provided is a gas distribution element and a heat treatment device containing the gas distribution element. The gas distribution element comprises at least two regions with different hole distribution densities. Specifically, the gas distribution element comprises a first region defined by a first distance radially extending outward from a geometric center, and a second region defined by a second distance radially extending from an outermost edge toward the geometric center; and the first region and the second region respectively have holes with different distribution densities.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
19.
LOW-PRESSURE OXIDATION TREATMENT METHOD AND DEVICE FOR SEMICONDUCTOR WORKPIECES
Provided is a low-pressure oxidation treatment method and device for a semiconductor workpiece. The low-pressure oxidation treatment method includes: pumping a reaction chamber such that the reaction chamber has a pressure lower than 760 Torr; introducing a process gas including hydrogen and oxygen to the reaction chamber; increasing a temperature within the reaction chamber to cause the process gas to generate oxygen radicals; and exposing the semiconductor workpiece to the oxygen radicals to form an oxide film on a surface of the semiconductor workpiece.
Provided is a process platform, relating to the field of semiconductor technologies and specifically. The process platform includes a conveying bin, an accommodating bin, and reaction chambers. The conveying bin is internally provided with a first conveying part having grabbing mechanisms. The accommodating bin is communicated with the conveying bin and used for loading a wafer. The reaction chambers are each communicated with the conveying bin, at least one wafer carrying table is arranged in each reaction chamber, and liftable ejector pins are arranged on a top surface of the wafer carrying table.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
21.
ELECTROSTATIC CHUCK ASSEMBLY FOR PLASMA PROCESSING APPARATUS
An electrostatic chuck including a clamping layer having a first clamping electrode and a second clamping electrode is disclosed. A first clamping electrode defining a first clamping zone and a second clamping zone is provided. The first clamping zone and the second clamping zone are separated by a first gap and are electrically connected by at least one electrical connection extending across the first gap. A second clamping electrode disposed radially outward from the first clamping electrode. The second clamping electrode defining a third clamping zone and a fourth clamping zone that are separated by a second gap. The third clamping zone and the fourth clamping zone are electrically connected by at least one electrical connection extending across the second gap. Plasma processing apparatuses and systems incorporating the electrostatic chuck are also provided.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
22.
HEAT TREATMENT APPARATUS AND TEMPERATURE REGULATING METHOD FOR SEMICONDUCTOR WORKPIECE
A heat treatment apparatus is provided, which includes: a first cover plate including three or more first windows; a second cover plate including two or more second windows, the second windows are transmissive to radiation with a wavelength of 2.7 μm; a workpiece support element between the first cover plate and the second cover plate, configured to support the semiconductor workpiece; a temperature measurement component comprising an infrared emitter, at least two infrared reflection sensors that are successive and at least two infrared transmission sensors, where the three or more first windows comprise a first window at a first position, a first window at least one middle position and a first window at a final position in a horizontal direction away from the infrared emitter, and a surface facing to the second cover plate of the first window at the middle position has a reflection transmission coating layer.
G01J 5/10 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
23.
HEAT TREATMENT APPARATUS AND ACCURATE TEMPERATURE MEASUREMENT METHOD FOR SEMICONDUCTOR WORKPIECE
A heat treatment apparatus is provided, which includes: a reaction chamber defined by an upper cover plate, a lower cover plate and a reaction chamber body; an infrared emitter located at an end of the upper cover plate; an infrared reflection sensor located at another end of the upper cover plate, and an infrared transmission sensor located at another end of the lower cover plate. The infrared emitter and the infrared reflection sensor are located at a side of the upper cover plate facing to the reaction chamber, the infrared transmission sensor is located at a side of the lower cover plate facing to the reaction chamber, the infrared emitter is located on a sidewall of an end of the reaction chamber body, and the infrared reflection sensor and the infrared transmission sensor are located on a sidewall of another end of the reaction chamber body.
G01N 21/3563 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solidsPreparation of samples therefor
Provided is a reaction chamber and an oxidation device. The reaction chamber includes a chamber body and a flow guide tube. The chamber body is provided with a wafer stage inside, the wafer stage forms a reaction area for accommodating a wafer, a top surface of the reaction area is not lower than a top surface of the wafer, and a side wall of the chamber body is provided with an opening. The flow guide tube is arranged inside the chamber body, the flow guide tube comprises a tube body, a gas inlet of the tube body is communicated with the opening, and a gas outlet of the tube body extends toward the reaction area and is used to transport the plasma to the top surface of the reaction area.
Systems and methods for thermal treatment of a workpiece are provided. In one example, a method for conducting a treatment process on a workpiece, such as a thermal treatment process, an annealing treatment process, an oxidizing treatment process, or a reducing treatment process in a processing apparatus is provided. The processing apparatus includes a plasma chamber and a processing chamber. The plasma chamber and the processing chamber are separated by a plurality of separation grids or grid plates. The separation grids or grid plates operable to filter ions generated in the plasma chamber. The processing chamber has a workpiece support operable to support a workpiece.
The present disclosure provides a transfer apparatus and a processing system. The transfer apparatus includes a first transfer assembly configured to transfer a first workpiece to a chamber. The transfer apparatus includes a second transfer assembly configured to transfer a second workpiece from the chamber. The transfer apparatus includes an isolation assembly disposed between the first transfer assembly and the second transfer assembly and configured to isolate energy transfer between the first workpiece and the second workpiece. The transfer apparatus further includes a support assembly configured to restrict the isolation assembly between the first transfer assembly and the second transfer assembly.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
B25J 9/04 - Programme-controlled manipulators characterised by movement of the arms, e.g. cartesian co-ordinate type by rotating at least one arm, excluding the head movement itself, e.g. cylindrical co-ordinate type or polar co-ordinate type
B25J 19/00 - Accessories fitted to manipulators, e.g. for monitoring, for viewingSafety devices combined with or specially adapted for use in connection with manipulators
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
27.
WORKPIECE PROCESSING APPARATUS AND METHODS FOR THE TREATMENT OF WORKPIECES
Systems and methods for thermal treatment of a workpiece are provided. In one example, a method for conducting a treatment process on a workpiece, such as a thermal treatment process, an annealing treatment process, an oxidizing treatment process, or a reducing treatment process in a processing apparatus is provided. The processing apparatus includes a plasma chamber and a processing chamber. The plasma chamber and the processing chamber are separated by a plurality of separation grids or grid plates. The separation grids or grid plates operable to filter ions generated in the plasma chamber. The processing chamber has a workpiece support operable to support a workpiece.
Support plates for localized heating in thermal processing systems to uniformly heat workpieces are provided. In one example implementation, localized heating is achieved by modifying a heat transmittance of a support plate such that one or more portions of the support plate proximate the areas that cause cold spots transmit more heat than the rest of the support plate. For example, the one or more portions (e.g., areas proximate to one or more support pins) of the support plate have a higher heat transmittance (e.g., a higher optical transmission) than the rest of the support plate. In another example implementation, localized heating is achieved by heating a workpiece via a coherent light source through a transmissive support structure (e.g., one or more support pins, or a ring support) in addition to heating the workpiece globally by light from heat sources.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
29.
Rapid Thermal Processing System With Cooling System
Apparatus, systems, and methods for processing workpieces are provided. In one example, such a method for performing a spike anneal rapid thermal process may include controlling a heat source to begin heating a workpiece supported on a workpiece support in a processing chamber. The method may further include receiving data indicative of a temperature of the workpiece. Furthermore, the method may include monitoring the temperature of the workpiece relative to a temperature setpoint. Moreover, the method may include controlling the heat source to stop heating the workpiece based at least in part on the workpiece reaching the temperature setpoint. Additionally, the method may include controlling a cooling system to begin flowing a cooling gas at a rate of about 300 slm or greater over the workpiece based at least in part on the workpiece reaching the temperature setpoint to reduce a t50 peak width of the workpiece.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
30.
METHOD FOR PROCESSING WORKPIECE, PLASMA PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE
A method for processing a workpiece, a plasma processing apparatus and a semiconductor device are provided. The method includes placing a workpiece including a spacer layer on a workpiece support in a chamber; selecting a composition modulation gas to modulate a volume ratio of carbon and fluorine to process the workpiece, the composition modulation gas includes one or more molecules, the volume ratio of carbon and fluorine is indicative of a distribution of carbon-based polymer deposited on the spacer layer; generating one or more species using one or more plasmas from a process gas to create a mixture, the process gas includes an etching gas and the composition modulation gas; and exposing the workpiece to the mixture to form a polymer layer on at least a portion of the spacer layer and to etch at least a portion of the spacer layer.
A processing apparatus for a thermal treatment of a workpiece is presented. The processing apparatus includes a processing chamber, a workpiece support disposed within the processing chamber, a gas delivery system configured to flow one or more process gases into the processing chamber from the a first side of the processing chamber, one or more radiative heating sources disposed on the second side of the processing chamber, one or more dielectric windows disposed between the workpiece support and the one or more radiative heating sources, a rotation system configured to rotate the one or more radiative heating sources, and a workpiece temperature measurement system configured at a temperature measurement wavelength range to obtain a measurement indicative of a temperature of a back side of the workpiece.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
F27B 17/00 - Furnaces of a kind not covered by any of groups
F27D 7/02 - Supplying steam, vapour, gases or liquids
G01J 5/10 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
G01J 5/58 - Radiation pyrometry, e.g. infrared or optical thermometry using absorptionRadiation pyrometry, e.g. infrared or optical thermometry using extinction effect
Matching circuitry is disclosed for power generation in a plasma processing apparatus or other application. Matching circuitry is provided in a unitary physical enclosure and is configured to provide impedance matching at multiple different frequencies. For example, in a dual frequency implementation, first and second RF generators can provide electromagnetic energy at first and second respective frequencies in a continuous mode or a pulsed mode to matching circuitry that includes first and second circuit portions. The first circuit portion can include one or more first tuning elements configured to receive RF power at a first frequency and provide impedance matching for a first ICP load (e.g., a primary inductive element). The second circuit portion can include one or more second tuning elements configured to receive RF power at a second different frequency and provide impedance matching for a second ICP load (e.g., a secondary inductive element).
Preheat processes for a millisecond anneal system are provided. In one example implementation, a preheat process can include receiving a substrate on a wafer support plate in a processing chamber of a millisecond anneal system; obtaining one or more temperature measurements of the wafer support plate using a temperature sensor; and applying a preheat recipe to heat the wafer support plate based at least in part on the temperature of the wafer support plate. In one example implementation, a preheat process can include obtaining one or more temperature measurements from a temperature sensor having a field of view of a wafer support plate in a millisecond anneal system; and applying a pulsed preheat recipe to heat the wafer support plate in the millisecond anneal system based at least in part on the one or more temperature measurements.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus can include a plasma chamber configured to be able to hold a plasma. The plasma processing apparatus can include a dielectric window forming at least a portion of a wall of the plasma chamber. The plasma processing apparatus can include an inductive coupling element located proximate the dielectric window. The inductive coupling element can be configured to generate a plasma from the process gas in the plasma chamber when energized with radio frequency (RF) energy. The plasma processing apparatus can include a processing chamber having a workpiece support configured to support a workpiece. The plasma processing apparatus can include an electrostatic shield located between the inductive coupling element and the dielectric window. The electrostatic shield can be grounded via a tunable reactive impedance circuit to a ground reference.
A thermal processing system for performing thermal processing can include a workpiece support plate configured to support a workpiece and heat source(s) configured to heat the workpiece. The thermal processing system can include window(s) having transparent region(s) that are transparent to electromagnetic radiation within a measurement wavelength range and opaque region(s) that are opaque to electromagnetic radiation within a portion of the measurement wavelength range. A temperature measurement system can include a plurality of infrared emitters configured to emit infrared radiation and a plurality of infrared sensors configured to measure infrared radiation within the measurement wavelength range where the transparent region(s) are at least partially within a field of view the infrared sensors. A controller can be configured to perform operations including obtaining transmittance and reflectance measurements associated with the workpiece and determining, based on the measurements, a temperature of the workpiece less than about 600° C.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
36.
Electrostatic chuck assembly for plasma processing apparatus
An electrostatic chuck including a workpiece support surface, clamping layer, heating layer, thermal control system, and sealing band is disclosed. The sealing band surrounds an outer perimeter of the electrostatic chuck including at least a portion of the workpiece surface. The sealing band has a width greater than about 3 millimeters (mm) up to about 10 mm. Plasma processing apparatuses and systems incorporating the electrostatic chuck are also provided.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
37.
Workpiece Processing Apparatus with Contact Temperature Sensor
A semiconductor fabrication apparatus for processing one or more workpieces is provided. The apparatus includes one or more components exposed to radio frequency energy or heat and one or more optical contact temperature sensors disposed on the one or more components. Methods for measuring temperature of a component of a semiconductor fabrication apparatus are also provided.
G01K 11/3206 - Measuring temperature based on physical or chemical changes not covered by group , , , or using changes in transmittance, scattering or luminescence in optical fibres at discrete locations in the fibre, e.g. using Bragg scattering
The present disclosure relates to the technical field of semiconductors. Provided are a reaction chamber (100) and a wafer etching device. The reaction chamber (100) comprises a cavity (1), a wafer transfer port (10), a first liner (11), and a first heater (112). The cavity (1) is internally provided with a wafer stage (4). The wafer transfer port (10) is in communication with the inside of the cavity (1). The first liner (11) is arranged between the inner wall of the cavity (1) and the outer wall of the wafer stage (4). The first heater (112) is arranged in the inner wall of the cavity (1) and corresponds to the position of the first liner (11), and the first heater (112) is configured to heat the first liner (11).
The present disclosure relates to the field of semiconductor processing. Provided are a gas conveying device, a gas conveying system (10) and a plasma processing device (100). The gas conveying device is configured to convey process gas to edge areas of a processing chamber (20) that are distributed along a circumferential direction of the processing chamber. The gas conveying device comprises: a first gas intake unit (111), which comprises a plurality of gas channels (111-1) distributed along a circumferential direction of the first gas intake unit and which is configured to convey the process gas to the processing chamber (20); and a second gas intake unit (112), which cooperates with the first gas intake unit (111) and comprises a plurality of gas intake pipelines (112-1) extending to the first gas intake unit (111), wherein the gas intake pipelines (112-1) are in communication with the gas channels (111-1). In addition, the gas conveying device further comprises a first control unit which is configured to control a flow rate of the process gas conveyed to the processing chamber (20) via each of the gas intake pipelines (112-1).
The present disclosure relates to the technical field of semiconductors, and provides a reaction chamber (100) and a wafer etching apparatus. The reaction chamber (100) comprises a chamber body (1), first support parts (61), and an air extraction part (7). The chamber body (1) comprises a top plate (2) and a bottom plate (3) which are oppositely arranged in the vertical direction, the top plate (2) being provided with an air inlet (201), and the bottom plate (3) being provided with an air extraction port (301). A wafer carrier (4) is provided between the air inlet (201) and the air extraction port (301), an air extraction area (5) being formed between the inner wall of the chamber body (1) and the wafer carrier (4). The first support parts (61) are disposed between the inner wall of the chamber body (01) and the wafer carrier (4). The air extraction part (7) comprises a valve plate (71) and a valve core (72), the valve plate (71) being arranged inside the chamber body (01) and being connected to a first end of the valve core (72), and a second end of the valve core (72) being capable of ascending and descending so as to be inserted into the air extraction port (301). When the valve core (72) is at a first working position, a first annular space (73) is formed between the valve plate (71) and the bottom plate (3), and a second annular space (74) is formed between the valve core (72) and the air extraction port (301). The first annular space (73), the second annular space (74) and the air extraction area (5) are coaxially arranged.
The present disclosure relates to the technical field of semiconductor devices, and provides a wafer heat treatment apparatus, a tray control method and apparatus, an electronic device, a computer-readable storage medium, and a computer program product. The wafer heat treatment apparatus comprises: a cavity (10), a tray (20), an air flotation portion (30), and a detection portion (40). The cavity (10) comprises a top plate (11) and a bottom plate (12) that are arranged opposite to each other; the tray (20) is movably arranged in the cavity (10), a first end surface (221) of the tray (20) corresponds to the top plate (11), a second end surface (222) of the tray (20) corresponds to the bottom plate (12), the first end surface (221) is provided with a detection area (21), and the first end surface (221) is configured to support a wafer (22); the air flotation portion (30) is arranged between the bottom plate (12) and the second end surface (222) and is configured to control a suspended motion state of the tray (20) through air jet; the detection portion (40) is arranged in the cavity (10) and is electrically connected to the air flotation portion (30), the arrangement position of the detection portion (40) in the cavity (10) corresponds to the position of the detection area (21), and the detection portion (40) is configured to detect motion state information of the tray (20) by means of the detection area (21).
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
The present disclosure relates to the technical field of semiconductors. Provided are a reaction chamber and a wafer etching device. The reaction chamber comprises a chamber body (1), a wafer transfer port (10), a first lining (11), a first supporting part (6) and a first jacking mechanism (93), wherein a wafer stage (4) is provided in the chamber body (1); the wafer transfer port (10) is in communication with the interior of the chamber body (1); the first lining (11) is slidably connected to an inner wall of the chamber body (1) and slidably sleeved on an outer wall of the wafer stage (4), and the first lining (11) and the wafer stage (4) are coaxially arranged; the first lining (11) is used for controlling the state of connection and disconnection of the wafer transfer port (10); the first supporting part (6) is arranged between the chamber body (1) and the wafer stage (4), and located outside the first lining (11); and the first jacking mechanism (93) is arranged in the first supporting part (6), and a lifting part (95) of the first jacking mechanism (93) is connected to the first lining (11).
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A semiconductor fabrication apparatus for processing one or more workpieces is provided. The apparatus includes one or more components exposed to radio frequency energy or heat and one or more optical contact temperature sensors disposed on the one or more components. Methods for measuring temperature of a component of a semiconductor fabrication apparatus are also provided.
G01K 11/3206 - Measuring temperature based on physical or chemical changes not covered by group , , , or using changes in transmittance, scattering or luminescence in optical fibres at discrete locations in the fibre, e.g. using Bragg scattering
Provided in the present disclosure are a wafer stage, a reaction chamber and a wafer etching device. The wafer stage comprises a stage body (1), a column body (2), a partition part (3) and a support part (4), wherein the stage body (1) comprises a first end face (11) and a second end face (12); the column body (2) is arranged between the center of the first end face (11) and the center of the second end face (12); the partition part (3) surrounds an outer wall of the column body (2), and is connected to an inner wall of the stage body (1); a radio frequency area (31) is formed between the partition part (3) and the first end face (11), and a non-radio frequency area (32) is formed between the partition part (3) and the second end face (12); the support part (4) is arranged outside the stage body (1); a first channel (41) and a second channel (42) are formed inside the support part (4); the first channel (41) is in communication with the radio frequency area (31); and the second channel (42) is in communication with the non-radio frequency area (32).
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
A radio frequency probe, a radio frequency matcher, a radio frequency power supply, and a radio frequency measuring instrument. The radio frequency probe comprises a housing (1), a radio frequency transistor (2), a detection module (3), and a signal processing module (4). The housing is provided with a detection hole (11); the radio frequency transistor (2) is inserted into the detection hole (11); the detection module (3) comprises a current acquisition unit (31) and a voltage acquisition unit (32); the signal processing module (4) comprises a first differential amplifier (41), a second differential amplifier (42), and an amplitude-phase detection chip (43); the first differential amplifier (41) is connected to the current acquisition unit (31); the first differential amplifier (41) is connected to the amplitude-phase detection chip (43); the second differential amplifier (42) is connected to the voltage acquisition unit (32); and the second differential amplifier (42) is connected to the amplitude-phase detection chip (43).
The present disclosure relates to the field of semiconductor devices, and provides a covering structure (30), a covering method (300), and a semiconductor device (100). The covering structure (30) comprises lifting modules (35) configured to drive a cover body (40) to move in a height direction of a first cavity (20, and a sliding module (36) fixedly connected to the lifting modules (35) and in contact with the cover body (40). The sliding module (36) is configured to drive the cover body (40) to slide in a first width direction of the first cavity (20).
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
47.
Workpiece processing apparatus with plasma and thermal processing systems
A processing apparatus for processing a workpiece is presented. The processing apparatus includes a processing chamber, a plasma chamber separated from the processing chamber disposed on a first side of the processing chamber, and a plasma source configured to generate a plasma in the plasma chamber. One or more radiative heat sources configured to heat the workpiece disposed on a second and opposite side of the first side of the processing chamber. A dielectric window is disposed between the workpiece support and the one or more heat sources. The processing apparatus includes a rotation system configured to rotate the workpiece, the rotation system comprising a magnetic actuator.
Processes treating a workpiece are provided. In one example implementation, a method can include performing an organic radical treatment process on a workpiece. The workpiece includes a photoresist material and a semiconductor material. The organic radical treatment process can include generating one or more species in a first chamber. The treatment process can include flowing one or more hydrocarbon molecules at a flow rate of about 100 sccm to about 15000 sccm into the one or more species to create a mixture. The mixture can include one or more organic radicals. The treatment process can include exposing the workpiece to the mixture in a second chamber. The mixture etches the photoresist material at an etch rate that is greater than an etch rate of the semiconductor material. Devices and systems for processing workpieces are also provided.
B05D 1/00 - Processes for applying liquids or other fluent materials
B05D 7/24 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
49.
Electrostatic chuck assembly for plasma processing apparatus
An electrostatic chuck including a clamping layer having a first clamping electrode and a second clamping electrode is disclosed. A first clamping electrode defining a first clamping zone and a second clamping zone is provided. The first clamping zone and the second clamping zone are separated by a first gap and are electrically connected by at least one electrical connection extending across the first gap. A second clamping electrode disposed radially outward from the first clamping electrode. The second clamping electrode defining a third clamping zone and a fourth clamping zone that are separated by a second gap. The third clamping zone and the fourth clamping zone are electrically connected by at least one electrical connection extending across the second gap. Plasma processing apparatuses and systems incorporating the electrostatic chuck are also provided.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
50.
Enhanced ignition in inductively coupled plasmas for workpiece processing
Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.
H01L 21/263 - Bombardment with wave or particle radiation with high-energy radiation
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
An apparatus for combining plasma processing and thermal processing of a workpiece is presented. The apparatus includes a processing chamber, a plasma chamber separated from the processing chamber disposed on a first side of the processing chamber, and a plasma source configured to generate a plasma in the plasma chamber. A quartz workpiece support is disposed within the processing chamber, the workpiece support configured to support a workpiece. One or more radiative heat sources configured to heat the workpiece are disposed on a second and opposite side of the first side of the processing chamber. A dielectric window is disposed between the workpiece support and the one or more heat sources. In addition, the apparatus includes a temperature measurement system configured to obtain a temperature measurement indicative of a temperature of the workpiece.
Plasma processing apparatus and methods are disclosed. In one example implementation, a plasma processing apparatus can include a processing chamber. The apparatus can include a pedestal located in the processing chamber configured to support a workpiece during processing. The apparatus can include a dielectric window forming at least a portion of the processing chamber. The apparatus can include an inductive coupling element located proximate the dielectric window. The inductive coupling element can be configured to generate a plasma in the processing chamber when energized with RF energy. The apparatus can include a Faraday shield located between the inductive coupling element and the processing chamber. The apparatus can include at least one temperature control element in thermal communication with the Faraday shield.
Apparatus, systems, and methods for processing workpieces are provided. An arc lamp can include a tube. The arc lamp can include one or more inlets configured to receive water to be circulated through the arc lamp during operation as a water wall, the water wall configured to cool the arc lamp. The arc lamp can include a plurality of electrodes configured to generate a plasma in a forming gas introduced into the arc lamp via the one or more inlets. The forming gas can be or can include a mixture of a hydrogen gas and an inert gas, the hydrogen gas in the mixture having a concentration less than 4% by volume. The hydrogen gas can be introduced into the arc lamp prior to generating the plasma. The arc lamp may be used for processing workpieces.
H01J 61/073 - Main electrodes for high-pressure discharge lamps
H01J 61/28 - Means for producing, introducing, or replenishing gas or vapour during operation of the lamp
H01J 61/52 - Cooling arrangementsHeating arrangementsMeans for circulating gas or vapour within the discharge space
H01J 61/86 - Lamps with discharge constricted by high pressure with discharge additionally constricted by close spacing of electrodes, e.g. for optical projection
A control system operable to train a control tuner to generate temperature setpoint tracking improvements for a thermal processing system is provided. In one example implementation, temperature setpoint tracking improvements are achieved by generating system controller parameter adjustments based on a difference between a simulated workpiece temperature estimate and an actual workpiece temperature estimate. For example, a system model can generate a simulated workpiece temperature estimate simulating an actual workpiece temperature estimate, and based on the difference between the simulated and actual workpiece temperature estimates, generate clone controller parameter adjustments. The clone controller parameter adjustments can be used to generate system controller parameter adjustments, which can improve temperature setpoint tracking for the thermal processing system.
G05B 19/4155 - Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by programme execution, i.e. part programme or machine function execution, e.g. selection of a programme
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
55.
Transmission-based temperature measurement of a workpiece in a thermal processing system
A thermal processing system for performing thermal processing can include a workpiece support plate configured to support a workpiece and heat source(s) configured to heat the workpiece. The thermal processing system can include window(s) having transparent region(s) that are transparent to electromagnetic radiation within a measurement wavelength range and opaque region(s) that are opaque to electromagnetic radiation within a portion of the measurement wavelength range. A temperature measurement system can include a plurality of infrared emitters configured to emit infrared radiation and a plurality of infrared sensors configured to measure infrared radiation within the measurement wavelength range where the transparent region(s) are at least partially within a field of view the infrared sensors. A controller can be configured to perform operations including obtaining transmittance and reflectance measurements associated with the workpiece and determining, based on the measurements, a temperature of the workpiece less than about 600° C.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
56.
Storage Cassette for Replaceable Parts for Plasma Processing Apparatus
A cassette for a workpiece processing system is provided. The cassette is configured to hold one or more replaceable parts, one or more workpieces and one or more pedestal protectors. The cassette includes a divider configured to separate the one or more replacement parts from the one or more workpieces and/or one or more pedestal protectors. The cassette is configured to be disposed in a storage chamber of a workpiece processing apparatus to facilitate automated replacement of replacement parts in one or more processing chambers. Workpiece processing systems and methods of replacing replacement parts in a workpiece processing system are also provided.
Support plates for localized heating in thermal processing systems to uniformly heat workpieces are provided. In one example implementation, localized heating is achieved by modifying a heat transmittance of a support plate such that one or more portions of the support plate proximate the areas that cause cold spots transmit more heat than the rest of the support plate. For example, the one or more portions (e.g., areas proximate to one or more support pins) of the support plate have a higher heat transmittance (e.g., a higher optical transmission) than the rest of the support plate. In another example implementation, localized heating is achieved by heating a workpiece via a coherent light source through a transmissive support structure (e.g., one or more support pins, or a ring support) in addition to heating the workpiece globally by light from heat sources.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
58.
Apparatus for hydrogen assisted atmospheric radical oxidation
Apparatus, systems, and methods for processing workpieces are provided. In one example implementation, a hydrogen gas mixed with an inert gas can be reacted with an oxygen gas to oxidize a workpiece at atmospheric pressure. A chemical reaction of a hydrogen gas with an oxygen gas facilitated by a hot workpiece surface can positively affect an oxidation process. A reaction speed of the chemical reaction can be slowed down by mixing the hydrogen gas with an inert gas. Such mixture can effectively reduce a partial pressure of the hydrogen gas. As such, the oxidation process can be carried out at atmospheric pressure, thereby, in an atmospheric thermal processing chamber.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
59.
Transfer Position for Workpieces and Replaceable Parts in a Vacuum Processing Apparatus
Systems and methods for processing workpieces, such as semiconductor workpieces are provided. One example embodiment is directed to a processing system for processing a plurality of workpieces. The processing system can include a loadlock chamber, a transfer chamber, and at least two processing chamber having two or more processing stations. The processing system further includes a storage chamber for storing replaceable parts. The transfer chamber includes a workpiece handling robot. The workpiece handling robot can be configured to transfer a plurality of replaceable parts from the processing stations to the storage chamber.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
B25J 11/00 - Manipulators not otherwise provided for
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
60.
Conductive Member for Cleaning Focus Ring of a Plasma Processing Apparatus
A pedestal assembly is provided. The pedestal assembly includes an electrostatic chuck configured to support a workpiece. The pedestal assembly includes a focus ring have a top surface and a bottom surface. The focus ring can be configured to surround a periphery of the workpiece when the workpiece is positioned on the electrostatic chuck. The pedestal assembly includes a plurality of insulators. The pedestal assembly further includes a conductive member positioned between at least a portion of the bottom surface of the focus ring and at least a portion of one of the plurality of insulators.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A processing system for processing a plurality of workpieces includes a transfer chamber in process flow communication with a first processing chamber and a second processing chamber, the transfer chamber having a first straight side, wherein the first process chamber includes at least one first processing station, and wherein the first processing chamber is disposed along the first straight side, wherein the second process chamber includes at least two second processing stations, wherein the second processing chamber is disposed along the first straight side, and wherein the second process chamber disposed in linear arrangement with the first process chamber along the first straight side, and wherein the transfer chamber includes at least one workpiece handling robot configured to transfer at least one workpiece to the at least one first processing station and the at least two second processing stations.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
62.
Pressure control system for a multi-head processing chamber of a plasma processing apparatus
A pressure control system is provided. The pressure control system includes a member at least partially positioned within a pumping port fluidly coupled between a multi-head processing chamber and a pump configured to evacuate gases from the multi-head processing chamber. The member is rotatable relative to the pumping port. The pressure control system includes a plurality of pressure sensors. Each of the pressure sensors is configured to obtain data indicative of a pressure of a flow of gas entering the multi-head processing chamber at a corresponding head of the multi-head processing chamber. The pressure control system includes an actuator configured to rotate the member to control a pressure of a flow of gas at a first processing head of the multi-head processing chamber.
A lift pin assembly for a lift pin of a plasma processing apparatus is provided. The lift pin assembly includes a pin housing defining an opening into which a lift pin extends. The pin housing is positioned such that the opening is aligned with an opening defined by an electrostatic chuck. The assembly includes a pin height adjustment member partially positioned within the opening defined by the pin housing. The pin height adjustment member is movable along an axis in a first direction and a second direction to move the lift pin into and out of the opening defined by the electrostatic chuck. The assembly includes a pin holder assembly at least partially positioned within an opening defined by the pin height adjustment member. The pin holder assembly is configured to hold the lift pin such that the lift pin is aligned with the opening defined by the electrostatic chuck.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
64.
Electrostatic chuck assembly for plasma processing apparatus
An electrostatic chuck including a clamping layer having a first clamping electrode and a second clamping electrode is disclosed. A first clamping electrode defining a first clamping zone and a second clamping zone is provided. The first clamping zone and the second clamping zone are separated by a first gap and are electrically connected by at least one electrical connection extending across the first gap. A second clamping electrode disposed radially outward from the first clamping electrode. The second clamping electrode defining a third clamping zone and a fourth clamping zone that are separated by a second gap. The third clamping zone and the fourth clamping zone are electrically connected by at least one electrical connection extending across the second gap. Plasma processing apparatuses and systems incorporating the electrostatic chuck are also provided.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A plasma processing apparatus including a processing chamber having one or more sidewalls and a dome is provided. The plasma processing apparatus includes a workpiece support disposed in the processing chamber configured to support a workpiece during processing, an induction coil assembly for producing a plasma in the processing chamber, a Faraday shield disposed between the induction coil assembly and the dome, the Faraday shield comprising an inner portion and an outer portion, and a thermal management system. The thermal management system including one or more heating elements configured to heat the dome, and one or more thermal pads disposed between an outer surface of the dome and the heating elements, wherein the one or more thermal pads are configured to facilitate heat transfer between the one or more heating elements and the dome. Thermal management systems and methods for processing workpieces are also provided.
A plasma source array is provided. The plasma source array includes a plurality of hybrid plasma sourcelets disposed on a base plate. Each hybrid sourcelet includes a dielectric tube having an inner area and an outer surface; an inductively coupled plasma source for generating a inductively coupled plasma disposed proximate to the outer surface of the dielectric tube; a capacitively coupled plasma source for generating a capacitively coupled plasma disposed within the inner area of the dielectric tube; and a gas injection system configured to supply one or more process gases to the inner area of the dielectric tube. Plasma processing apparatuses incorporating the plasma source array and methods of use are also provided.
Matching circuitry is disclosed for power generation in a plasma processing apparatus or other application. Matching circuitry is provided in a unitary physical enclosure and is configured to provide impedance matching at multiple different frequencies. For example, in a dual frequency implementation, first and second RF generators can provide electromagnetic energy at first and second respective frequencies in a continuous mode or a pulsed mode to matching circuitry that includes first and second circuit portions. The first circuit portion can include one or more first tuning elements configured to receive RF power at a first frequency and provide impedance matching for a first ICP load (e.g., a primary inductive element). The second circuit portion can include one or more second tuning elements configured to receive RF power at a second different frequency and provide impedance matching for a second ICP load (e.g., a secondary inductive element).
Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A processing system for processing a plurality of workpieces includes a transfer chamber in process flow communication with a first processing chamber and a second processing chamber, the transfer chamber having a first straight side, wherein the first process chamber includes at least one first processing station, and wherein the first processing chamber is disposed along the first straight side, wherein the second process chamber includes at least two second processing stations, wherein the second processing chamber is disposed along the first straight side, and wherein the second process chamber disposed in linear arrangement with the first process chamber along the first straight side, and wherein the transfer chamber includes at least one workpiece handling robot configured to transfer at least one workpiece to the at least one first processing station and the at least two second processing stations.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
70.
WORKPIECE PROCESSING APPARATUS WITH THERMAL PROCESSING SYSTEMS
A processing apparatus for a thermal treatment of a workpiece is presented. The processing apparatus includes a processing chamber, a workpiece support disposed within the processing chamber, a gas delivery system configured to flow one or more process gases into the processing chamber from the first side of the processing chamber, one or more radiative heating sources disposed on the second side of the processing chamber, one or more dielectric windows disposed between the workpiece support and the one or more radiative heating sources, a rotation system configured to rotate the one or more radiative heating sources, and a workpiece temperature measurement system configured at a temperature measurement wavelength range to obtain a measurement indicative of a temperature of a back side of the workpiece.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
G01J 5/00 - Radiation pyrometry, e.g. infrared or optical thermometry
71.
INDUCTION COIL ASSEMBLY FOR PLASMA PROCESSING APPARATUS
An induction coil assembly is disclosed including two induction coils. Each induction coil includes a first winding commencing from a first terminal end in a first position in the z-direction and transitioning to a radially inner position in a plane normal to the z-direction and a second winding commencing from the radially inner position and transitioning to a radially outer position in a second plane normal to the z-direction and terminating in a second terminal end. Plasma processing apparatuses incorporating the induction coil assembly are also provided.
Systems and methods for processing a workpiece are provided. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The method can include processing the workpiece by exposing the workpiece to one or more radicals generated using a hybrid plasma source. In one embodiment, the plasma source comprises a resonant circuit that that includes an inductively coupled plasma source and a capacitively coupled plasma source. A controller can be configured to adjust the excitation frequency of the resonant circuit by reducing a harmonic current below a target value, wherein the harmonic current is a sum of one or more currents respectively corresponding to one or more harmonics of the excitation frequency.
An electrostatic chuck including a workpiece support surface, clamping layer, heating layer, thermal control system, and sealing band is disclosed. The sealing band surrounds an outer perimeter of the electrostatic chuck including at least a portion of the workpiece surface. The sealing band has a width greater than about 3 millimeters (mm) up to about 10 mm. Plasma processing apparatuses and systems incorporating the electrostatic chuck are also provided.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A workpiece support for a thermal processing system is provided. The workpiece support includes a rotor configured to support a workpiece. The workpiece support further includes a gas supply. The gas supply can include a plurality of bearing pads. Each of the bearing pads can be positioned closer to a periphery of the rotor than a center of the rotor. Each of the bearing define one or more passages configured to direct gas onto the rotor to control a position of the rotor along a first axis and a second axis that is substantially perpendicular to the first axis. Furthermore, one or more of the bearing pads define at least one additional passage configured to direct gas onto the rotor to control rotation of the rotor about the first axis.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Provided is a plasma processing apparatus or system including a plasma chamber and an inductively coupled plasma source. A shielding device is disposed between the plasma chamber the inductively coupled plasma source. The shielding device includes a top annular portion, a bottom annular portion, and a plurality of thermal pads coupled to top annular portion and/or bottom annular portion with one or more retaining members. The one or more retaining members provide a compressive force to secure the one or more thermal pads against the outer surface of the dielectric wall. The plurality of thermal pads are configured to modulate a heat flux from the dielectric wall into the respective thermal pad. Methods of processing workpieces are also disclosed.
A configurable Faraday shield is provided. The configurable Faraday shield includes a plurality of ribs. Each of the ribs can be spaced apart from one another along a circumferential direction. Furthermore, at least a portion of the configurable Faraday shield is movable between at least a first position and a second position to selectively couple the configurable Faraday shield to a radio frequency ground plane. When the at least a portion of the configurable Faraday shield is in the first position, the configurable Faraday shield can be decoupled from the radio frequency ground plane such that the configurable Faraday shield is electrically floating. Conversely, when the at least a portion of the configurable Faraday shield is in the second position, the configurable Faraday shield can be coupled to the radio frequency ground plane such that the configurable Faraday shield is electrically grounded.
A gas injection assembly for injecting gas into a processing chamber is provided. In some examples, the gas injection assembly can include an inlet for receiving a gas flow. The gas injection assembly can include a plurality of gas feed ports for distributing the gas flow received from the inlet. The gas injection assembly can include a plurality of subchannels vertically arranged inside of the gas injection assembly, including: an upper subchannel for receiving the gas flow from the inlet and subdividing the gas flow into a set of orifices to form a first gas flow branch and a second gas flow branch, the first gas flow branch corresponding to a first portion of the gas flow passing through a first subset of the set of orifices and the second gas flow branch corresponding to a second portion of the gas flow passing through a second subset of the set of orifices; and a plurality of outlet subchannels for subdividing the gas flow into the plurality of gas feed ports.
A grid assembly for injecting process gas to a chamber. The grid assembly including a gas inlet for delivering the process gas to the grid assembly, a plurality of nozzles extending vertically through at least a portion of the grid assembly, and a plurality of layers in a vertical stacked arrangement. The plurality of layers including a top layer including one or more internal gas injection channels configured to receive process gas from the gas inlet, a bottom layer including a plurality of internal gas injection channels having one or more injection apertures configured to deliver the process gas about a horizontal plane to one or more of the plurality of nozzles, and one or more sublayers disposed between the top layer and the bottom layer, each of the one or more sublayers including an increasing number of internal gas injection channels as the one or more sublayers advance from the top layer to the bottom layer. Plasma processing apparatuses and method of processing workpiece are also provided.
A workpiece support for a thermal processing system is provided. The workpiece support includes a rotor configured to support a workpiece. The workpiece support further includes a gas supply. The gas supply can include a plurality of bearing pads. Each of the bearing pads can be positioned closer to a periphery of the rotor than a center of the rotor. Each of the bearing define one or more passages configured to direct gas onto the rotor to control a position of the rotor along a first axis and a second axis that is substantially perpendicular to the first axis. Furthermore, one or more of the bearing pads define at least one additional passage configured to direct gas onto the rotor to control rotation of the rotor about the first axis.
F16C 17/03 - Sliding-contact bearings for exclusively rotary movement for radial load only with tiltably-supported segments, e.g. Michell bearings
F27B 17/00 - Furnaces of a kind not covered by any of groups
F27D 5/00 - Supports, screens or the like for the charge within the furnace
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Systems and methods for processing a workpiece are provided. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The method can include processing the workpiece by exposing the workpiece to one or more radicals generated using a hybrid plasma source. In one embodiment, the plasma source comprises a resonant circuit that that includes an inductively coupled plasma source and a capacitively coupled plasma source. A controller can be configured to adjust the excitation frequency of the resonant circuit by reducing a harmonic current below a target value, wherein the harmonic current is a sum of one or more currents respectively corresponding to one or more harmonics of the excitation frequency.
A workpiece processing apparatus is provided. The workpiece processing apparatus can include a processing chamber and a workpiece disposed on a workpiece support within the processing chamber. The workpiece processing apparatus can include a gas delivery system and one or more exhaust ports for removing gas from the processing chamber such that a vacuum pressure can be maintained. The workpiece processing apparatus can include radiative heating sources configured to heat the workpiece. The workpiece processing apparatus can further include a plurality of reflectors. The workpiece processing apparatus can include a control system configured to control one or more positions of the reflectors.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
G01J 5/00 - Radiation pyrometry, e.g. infrared or optical thermometry
82.
WORKPIECE PROCESSING APPARATUS WITH GAS SHOWERHEAD ASSEMBLY
A processing apparatus for a thermal treatment of a workpiece is presented. The processing apparatus includes a processing chamber, a workpiece support disposed within the processing chamber, a gas delivery system, and radiative heat sources for heating the workpiece. The gas delivery system includes a gas showerhead assembly that is transparent to electromagnetic radiation emitted from the one or more radiative heat sources. The gas showerhead assembly includes one or more gas diffusion mechanisms to distribute gas within the enclosure.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
83.
Workpiece processing apparatus with thermal processing systems
A processing apparatus for a thermal treatment of a workpiece is presented. The processing apparatus includes a processing chamber, a workpiece support disposed within the processing chamber, a gas delivery system configured to flow one or more process gases into the processing chamber from the a first side of the processing chamber, one or more radiative heating sources disposed on the second side of the processing chamber, one or more dielectric windows disposed between the workpiece support and the one or more radiative heating sources, a rotation system configured to rotate the one or more radiative heating sources, and a workpiece temperature measurement system configured at a temperature measurement wavelength range to obtain a measurement indicative of a temperature of a back side of the workpiece.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
F27B 17/00 - Furnaces of a kind not covered by any of groups
F27D 7/02 - Supplying steam, vapour, gases or liquids
G01J 5/10 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
G01J 5/58 - Radiation pyrometry, e.g. infrared or optical thermometry using absorptionRadiation pyrometry, e.g. infrared or optical thermometry using extinction effect
An induction coil assembly is disclosed including two induction coils. Each induction coil includes a first winding commencing from a first terminal end in a first position in the z-direction and transitioning to a radially inner position in a plane normal to the z-direction and a second winding commencing from the radially inner position and transitioning to a radially outer position in a second plane normal to the z-direction and terminating in a second terminal end. Plasma processing apparatuses incorporating the induction coil assembly are also provided.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
An electrostatic chuck including a workpiece support surface, clamping layer, heating layer, thermal control system, and sealing band is disclosed. The sealing band surrounds an outer perimeter of the electrostatic chuck including at least a portion of the workpiece surface. The sealing band has a width greater than about 3 millimeters (mm) up to about 10 mm. Plasma processing apparatuses and systems incorporating the electrostatic chuck are also provided.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
86.
Workpiece Processing Apparatus with Gas Showerhead Assembly
A processing apparatus for a thermal treatment of a workpiece is presented. The processing apparatus includes a processing chamber, a workpiece support disposed within the processing chamber, a gas delivery system, and radiative heat sources for heating the workpiece. The gas delivery system includes a gas showerhead assembly that is transparent to electromagnetic radiation emitted from the one or more radiative heat sources. The gas showerhead assembly includes one or more gas diffusion mechanisms to distribute gas within the enclosure.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/48 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
87.
WORKPIECE PROCESSING APPARATUS WITH THERMAL PROCESSING SYSTEMS
A processing apparatus for a thermal treatment of a workpiece is presented. The processing apparatus includes a processing chamber, a workpiece support disposed within the processing chamber, a rotation system configured to rotate the workpiece support, a gas delivery system configured to flow one or more process gases into the processing chamber from the a first side of the processing chamber, one or more gas exhaust ports for removing gas from the processing chamber such that a vacuum pressure can be maintained, one or more radiative heating sources disposed on the second side of the processing chamber, one or more dielectric windows disposed between the workpiece support and the one or more radiative heating sources, and a workpiece temperature measurement system configured at a temperature measurement wavelength range to obtain a measurement indicative of a temperature of a back side of the workpiece.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
88.
Workpiece Processing Apparatus with Vacuum Anneal Reflector Control
A workpiece processing apparatus is provided. The workpiece processing apparatus can include a processing chamber and a workpiece disposed on a workpiece support within the processing chamber. The workpiece processing apparatus can include a gas delivery system and one or more exhaust ports for removing gas from the processing chamber such that a vacuum pressure can be maintained. The workpiece processing apparatus can include radiative heating sources configured to heat the workpiece. The workpiece processing apparatus can further include a plurality of reflectors. The workpiece processing apparatus can include a control system configured to control one or more positions of the reflectors.
An apparatus for combining plasma processing and thermal processing of a workpiece is presented. The apparatus includes a processing chamber, a plasma chamber separated from the processing chamber disposed on a first side of the processing chamber, and a plasma source configured to generate a plasma in the plasma chamber. A quartz workpiece support is disposed within the processing chamber, the workpiece support configured to support a workpiece. One or more radiative heat sources configured to heat the workpiece are disposed on a second and opposite side of the first side of the processing chamber. A dielectric window is disposed between the workpiece support and the one or more heat sources. In addition, the apparatus includes a temperature measurement system configured to obtain a temperature measurement indicative of a temperature of the workpiece.
A processing apparatus for a thermal treatment of a workpiece is presented. The processing apparatus includes a processing chamber, a workpiece support disposed within the processing chamber, a rotation system configured to rotate the workpiece support, a gas delivery system configured to flow one or more process gases into the processing chamber from the a first side of the processing chamber, one or more gas exhaust ports for removing gas from the processing chamber such that a vacuum pressure can be maintained, one or more radiative heating sources disposed on the second side of the processing chamber, one or more dielectric windows disposed between the workpiece support and the one or more radiative heating sources, and a workpiece temperature measurement system configured at a temperature measurement wavelength range to obtain a measurement indicative of a temperature of a back side of the workpiece.
A processing apparatus for processing a workpiece is presented. The processing apparatus includes a processing chamber, a plasma chamber separated from the processing chamber disposed on a first side of the processing chamber, and a plasma source configured to generate a plasma in the plasma chamber. One or more radiative heat sources configured to heat the workpiece disposed on a second and opposite side of the first side of the processing chamber. A dielectric window is disposed between the workpiece support and the one or more heat sources. The processing apparatus includes a rotation system configured to rotate the workpiece, the rotation system comprising a magnetic actuator.
Apparatus, systems, and methods for processing workpieces are provided. An arc lamp can include a tube. The arc lamp can include one or more inlets configured to receive water to be circulated through the arc lamp during operation as a water wall, the water wall configured to cool the arc lamp. The arc lamp can include a plurality of electrodes configured to generate a plasma in a forming gas introduced into the arc lamp via the one or more inlets. The forming gas can be or can include a mixture of a hydrogen gas and an inert gas, the hydrogen gas in the mixture having a concentration less than 4% by volume. The hydrogen gas can be introduced into the arc lamp prior to generating the plasma. The arc lamp may be used for processing workpieces.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
93.
Arc lamp with forming gas for thermal processing systems
Apparatus, systems, and methods for processing workpieces are provided. An arc lamp can include a tube. The arc lamp can include one or more inlets configured to receive water to be circulated through the arc lamp during operation as a water wall, the water wall configured to cool the arc lamp. The arc lamp can include a plurality of electrodes configured to generate a plasma in a forming gas introduced into the arc lamp via the one or more inlets. The forming gas can be or can include a mixture of a hydrogen gas and an inert gas, the hydrogen gas in the mixture having a concentration less than 4% by volume. The hydrogen gas can be introduced into the arc lamp prior to generating the plasma. The arc lamp may be used for processing workpieces.
H01J 61/073 - Main electrodes for high-pressure discharge lamps
H01J 61/86 - Lamps with discharge constricted by high pressure with discharge additionally constricted by close spacing of electrodes, e.g. for optical projection
Plasma processing systems and methods are provided. In one example, a system includes a processing chamber having a workpiece support. The workpiece is configured to support a workpiece. The system includes a plasma source configured to induce a plasma from a process gas in a plasma chamber to generate one or more species of negative ions. The system includes a grid structure configured to accelerate the one or more negative ions towards the workpiece. The grid structure can include a first grid plate, a second grid plate, and one or more magnetic elements positioned between the first grid plate and second grid plate to reduce electrons accelerated through the first grid plate. The system can include a neutralizer cell disposed. downstream of the grid structure configured to detach extra electrons from ions of the one or more species of negative ions to generate energetic neutral species for processing the workpiece.
Systems and methods for heat treating closed shape workpieces are provided. In one example implementation, a method can include imparting relative motion of the closed shape workpiece such that the perimeter surface of the closed shape workpiece is moved relative to the lamp heat source from a first position where a first portion of the closed shape workpiece is presented to the lamp heat source to a second position where a second portion of the closed shape workpiece is presented to the lamp heat source. The method can include emitting lamp heat onto the perimeter surface of the closed shape workpiece from the lamp heat source during imparting of relative motion of the closed shape workpiece. The method can include implementing a flux control procedure during emitting of lamp heat onto the perimeter surface of the closed shape workpiece.
C21D 9/08 - Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articlesFurnaces therefor for tubular bodies or pipes
C21D 11/00 - Process control or regulation for heat treatments
C21D 1/09 - Surface hardening by direct application of electrical or wave energySurface hardening by particle radiation
96.
Selective etch process using hydrofluoric acid and ozone gases
Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.
Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus can include a plasma chamber configured to be able to hold a plasma. The plasma processing apparatus can include a dielectric window forming at least a portion of a wall of the plasma chamber. The plasma processing apparatus can include an inductive coupling element located proximate the dielectric window. The inductive coupling element can be configured to generate a plasma from the process gas in the plasma chamber when energized with radio frequency (RF) energy. The plasma processing apparatus can include a processing chamber having a workpiece support configured to support a workpiece. The plasma processing apparatus can include an electrostatic shield located between the inductive coupling element and the dielectric window. The electrostatic shield can be grounded via a tunable reactive impedance circuit to a ground reference.
Plasma processing apparatus for processing a workpiece are provided. In one example embodiment, a plasma processing apparatus for processing a workpiece includes a processing chamber, a plasma chamber separated from the processing, and an inductively coupled plasma source configured to generate a plasma in the plasma chamber. The apparatus includes a pedestal disposed within the processing chamber configured to support a workpiece. The apparatus includes an insert disposed in the plasma chamber movable to one or more vertical positions within the plasma chamber. Methods for processing of workpieces are also provided.
Plasma processing apparatus for processing a workpiece are provided. In one example embodiment, a plasma processing apparatus for processing a workpiece includes a processing chamber, a plasma chamber separated from the processing, and an inductively coupled plasma source configured to generate a plasma in the plasma chamber. The apparatus includes a pedestal disposed within the processing chamber configured to support a workpiece. The apparatus includes an insert disposed in the plasma chamber movable to one or more vertical positions within the plasma chamber. Methods for processing of workpieces are also provided.
Apparatus, systems, and methods for processing workpieces are provided. In one example, such a method for performing a spike anneal rapid thermal process may include controlling a heat source to begin heating a workpiece supported on a workpiece support in a processing chamber. The method may further include receiving data indicative of a temperature of the workpiece. Furthermore, the method may include monitoring the temperature of the workpiece relative to a temperature setpoint. Moreover, the method may include controlling the heat source to stop heating the workpiece based at least in part on the workpiece reaching the temperature setpoint. Additionally, the method may include controlling a cooling system to begin flowing a cooling gas at a rate of about 300 slm or greater over the workpiece based at least in part on the workpiece reaching the temperature setpoint to reduce a t50 peak width of the workpiece.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/66 - Testing or measuring during manufacture or treatment
patents
