A power switch comprising: a cascode having a normally ON transistor connected in series with a normally OFF transistor at a cascode node; a safety switch between a gate of the normally ON transistor and a first ground common to the cascode and the switch; and a controller comprising: a controller power supply having a power supply output connected to the cascode node at which output the controller power supply provides a voltage relative to a second ground that is floating relative to the first ground; a first controller output connected to the gate of the normally ON transistor at which the controller generates a first voltage relative to the second ground; wherein the controller power supply is connected to the safety switch and voltage provided by the controller power supply is coupled to and operates to maintain the safety switch OFF and nonconducting and in the absence of the voltage the safety switch is turned ON and conducting.
H03K 17/08 - Modifications for protecting switching circuit against overcurrent or overvoltage
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
H03K 17/68 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being bipolar transistors specially adapted for switching AC currents or voltages
A power switch comprising: a cascode having a normally ON transistor connected in series with a normally OFF transistor at a cascode node; a safety switch between a gate of the normally ON transistor and a first ground common to the cascode and the switch; and a controller comprising: a controller power supply having a power supply output connected to the cascode node at which output the controller power supply provides a voltage relative to a second ground that is floating relative to the first ground; a first controller output connected to the gate of the normally ON transistor at which the controller generates a first voltage relative to the second ground; wherein the controller power supply is connected to the safety switch and voltage provided by the controller power supply is coupled to and operates to maintain the safety switch OFF and nonconducting and in the absence of the voltage the safety switch is turned ON and conducting.
H03K 17/689 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
H03K 17/06 - Modifications for ensuring a fully conducting state
H03K 17/0812 - Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
H03K 17/16 - Modifications for eliminating interference voltages or currents
H03K 17/04 - Modifications for accelerating switching
Short circuit protection circuitry comprising: a HEMT (high electron mobility transistor) comprising a source, drain, and gate controllable to be turned ON and OFF by voltage applied to the gate; a comparator having an input coupled to a high-pass filter and an output at which the comparator generates an output signal responsive to a voltage induced across an inductance if the voltage after filtering by the filter exhibits a voltage surge greater than a threshold voltage; and a voltage divider controllable to be turned ON and turned OFF to control voltage provided to the gate of the HEMT, and wherein the voltage divider is turned ON responsive to the output signal from the comparator to provide the gate with a reduced voltage that is less than an ON-threshold voltage of the HEMT.
Short circuit protection circuitry comprising: a HEMT (high electron mobility transistor) comprising a source, drain, and gate controllable to be turned ON and OFF by voltage applied to the gate; a comparator having an input coupled to a high-pass filter and an output at which the comparator generates an output signal responsive to a voltage induced across an inductance if the voltage after filtering by the filter exhibits a voltage surge greater than a threshold voltage; and a voltage divider controllable to be turned ON and turned OFF to control voltage provided to the gate of the HEMT, and wherein the voltage divider is turned ON responsive to the output signal from the comparator to provide the gate with a reduced voltage that is less than an ON-threshold voltage of the HEMT.
H03K 17/082 - Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
H02M 1/32 - Means for protecting converters other than by automatic disconnection
H03K 17/16 - Modifications for eliminating interference voltages or currents
H03K 19/0948 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET using CMOS
An electrical power switch, the power switch comprising: a pair of substantially parallel half bridges; a printed circuit board (PCB) controller operable to turn ON and turn OFF the half bridges; power terminals for coupling a high energy power source to the half bridges; a power phase output terminal for connecting a load to the half bridges; wherein the half bridges, PCB, power terminals, and power phase output terminal, are encapsulated in a same encapsulation envelope having a relatively large planar first face surface on which contact surfaces of the terminals are exposed.
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
H01L 23/04 - ContainersSeals characterised by the shape
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H02M 7/5387 - Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
A semiconductor transistor comprising: a drain region; a plurality of source regions; and a plurality of gate regions interleaved with the source regions.
H10D 84/83 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H10D 64/23 - Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
H10D 64/27 - Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
An electrical power switch, the power switch comprising: a pair of substantially parallel half bridges; a printed circuit board (PCB) controller operable to turn ON and turn OFF the half bridges; power terminals for coupling a high energy power source to the half bridges; a power phase output terminal for connecting a load to the half bridges; wherein the half bridges, PCB, power terminals, and power phase output terminal, are encapsulated in a same encapsulation envelope having a relatively large planar first face surface on which contact surfaces of the terminals are exposed.
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
H01L 23/04 - ContainersSeals characterised by the shape
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H02M 7/5387 - Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
A half bridge comprising: a high side (HS) transistor; a low side (LS) transistor connected in series with the high side transistor at an output node of the half bridge; and a third quadrant state (TQS) detector connected in parallel with the HS or LS transistor and in series respectively with the LS and/or HS transistor, which TQS detector generates a signal responsive to a direction of a voltage drop across the transistor that is in parallel with the TQS detector.
H02M 1/38 - Means for preventing simultaneous conduction of switches
H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
H02H 7/122 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for convertersEmergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for rectifiers for static converters or rectifiers for inverters, i.e. DC/AC converters
A half bridge comprising: a high side (HS) transistor; a low side (LS) transistor connected in series with the high side transistor at an output node of the half bridge; and a third quadrant state (TQS) detector connected in parallel with the HS or LS transistor and in series respectively with the LS and/or HS transistor, which TQS detector generates a signal responsive to a direction of a voltage drop across the transistor that is in parallel with the TQS detector.
H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
An electrical power switch, the power switch comprising: an array of rows and columns of lateral field effect (LFET) transistors, each transistor having a source, drain, and gate; a plurality of internal interconnect layers comprising metallizations configured to connect the transistors to operate in parallel; a source electrode and a drain electrode for respectively connecting the sources and drains of the transistors to an external circuit; and a bridging interconnect layer comprising: a plurality of undulating source bridging conductors that provide electrical connections for the sources of the transistors to the source electrode; and a plurality of undulating drain bridging conductors that provide electrical connections for the drains of the transistors to the drain electrode.
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H01L 23/528 - Layout of the interconnection structure
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
An electrical power switch, the power switch comprising: an array of rows and columns of lateral field effect (LFET) transistors, each transistor having a source, drain, and gate; a plurality of internal interconnect layers comprising metallizations configured to connect the transistors to operate in parallel; a source electrode and a drain electrode for respectively connecting the sources and drains of the transistors to an external circuit; and a bridging interconnect layer comprising: a plurality of undulating source bridging conductors that provide electrical connections for the sources of the transistors to the source electrode; and a plurality of undulating drain bridging conductors that provide electrical connections for the drains of the transistors to the drain electrode.
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 27/085 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
A power switch comprising: a cascode having a normally ON transistor connected in series with a normally OFF transistor at a cascode node; a safety switch between a gate of the normally ON transistor and a first ground common to the cascode and the switch; and a controller comprising: a controller power supply having a power supply output connected to the cascode node at which output the controller power supply provides a voltage relative to a second ground that is floating relative to the first ground; a first controller output connected to the gate of the normally ON transistor at which the controller generates a first voltage relative to the second ground; wherein the controller power supply is connected to the safety switch and voltage provided by the controller power supply is coupled to and operates to maintain the safety switch OFF and nonconducting and in the absence of the voltage the safety switch is turned ON and conducting.
A power switch comprising: a cascode having a normally ON transistor connected in series with a normally OFF transistor at a cascode node: a first diode connected between a gate of the normally ON transistor and a first ground common to the cascode and the diode; and a controller comprising: a controller power supply having a power supply output connected to the cascode node at which output the controller power supply provides a voltage relative to a second ground that is floating relative to the first ground; and a first controller output connected to the gate of the normally ON transistor at which the controller generates a first voltage relative to the second ground.
An electrical power switch, the power switch comprising: a pair of substantially parallel half bridges; a printed circuit board (PCB) controller operable to turn ON and turn OFF the half bridges; power terminals for coupling a high energy power source to the half bridges; a power phase output terminal for connecting a load to the half bridges; wherein the half bridges, PCB, power terminals, and power phase output terminal, are encapsulated in a same encapsulation envelope having a relatively large planar first face surface on which contact surfaces of the terminals are exposed.
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
A semiconductor transistor comprising: a drain region; a plurality of source regions; and a plurality of gate regions interleaved with the source regions.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
An interconnect for electrically connecting a semiconductor die to a component of a circuit, the interconnect comprising a monolithic conductor having: a first contact region patterned to overlay and to bond and electrically connect to a relatively large area of a metallization layer of the semiconductor die that is electrically connected to circuit elements of the die; and a second contact region patterned to overlay and to bond and electrically connect to a relatively large area of a metallization layer of the circuit component to which the die is intended to be connected.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
A power switch comprising: a cascode having a normally ON transistor connected in series with a normally OFF transistor at a cascode node; a first diode connected between a gate of the normally ON transistor and a first ground common to the cascode and the diode; and a controller comprising: a controller power supply having a power supply output connected to the cascode node at which output the controller power supply provides a voltage relative to a second ground that is floating relative to the first ground; and a first controller output connected to the gate of the normally ON transistor at which the controller generates a first voltage relative to the second ground.
H03K 17/689 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
H03K 17/16 - Modifications for eliminating interference voltages or currents
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H03K 17/06 - Modifications for ensuring a fully conducting state
Circuitry for reducing the energy losses of a snubber circuit used to protect current switching devices from overvoltage, comprising a switching cell consisting of a switch with alternating opposite conduction states, the switch being serially connected via one contact to a first diode, the switch includes an inherent output capacitance, the switch connects, via a first stray inductance), between one port of a power supply and an output inductor feeding a load, and the first diode connects, via a second stray inductance, between the other port of the power supply and the output inductor, such that whenever the switch passes from a conducting state to a non-conducting state, its inherent output capacitance is charged by a current pulse from the first stray inductance; a snubber circuit consisting of a ferrite bead, a snubber capacitor and a second diode, the snubber circuit being connecting between the other contact of the switch and the other port, for discharging at least a portion of the charge across the inherent output capacitance of the switch to the snubber capacitor via the other port.
H02M 7/537 - Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
H03K 17/0814 - Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
A voltage pulse generator comprising: circuitry controllable to generate a voltage pulse at an output of the circuitry; and an interruptor that monitors voltage at the output during a transition edge of the voltage pulse and interrupts a voltage change associated with the transition edge if the monitored voltage differs from a predetermined reference voltage by a predetermined amount.
H03K 5/13 - Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
H02P 27/08 - Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using DC to AC converters or inverters with pulse width modulation
Circuitry for reducing the energy losses of a snubber circuit used to protect current switching devices from overvoltage, comprising a switching cell consisting of a switch with alternating opposite conduction states, the switch being serially connected via one contact to a first diode, the switch includes an inherent output capacitance, the switch connects, via a first stray inductance), between one port of a power supply and an output inductor feeding a load, and the first diode connects, via a second stray inductance, between the other port of the power supply and the output inductor, such that whenever the switch passes from a conducting state to a non-conducting state, its inherent output capacitance is charged by a current pulse from the first stray inductance; a snubber circuit consisting of a ferrite bead, a snubber capacitor and a second diode, the snubber circuit being connecting between the other contact of the switch and the other port, for discharging at least a portion of the charge across the inherent output capacitance of the switch to the snubber capacitor via the other port.
H02H 9/02 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
H03K 3/57 - Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
H03K 17/56 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices
G05F 1/56 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
A device for switching a high-voltage source, comprising: a plurality of switching devices coupled in series starting from a first switching device and ending in a last switching device, said device enabling coupling of said high-voltage source with at least a selected one of said switching devices; a voltage limiter coupled with said switching devices; and a switching time synchronizer; wherein said first switching device is configured to directly receive a control signal for changing a switching state of said device, said first switching device is configured to facilitate a cascaded transition of switching states in successive said switching devices in said series, where said switching time synchronizer is configured to synchronize a time at which transitions to said switching states of successive said switching devices take effect, and said voltage limiter is configured to limit overvoltage conditions to said switching devices during said transitions.
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
H03K 17/0812 - Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
H03K 17/296 - Modifications to provide a choice of time-intervals for executing more than one switching action and automatically terminating their operation after the programme is completed
A device for at least one of detecting and measuring a pulsed voltage source, the device comprising: a transformer having a primary winding electromagnetically coupled with a secondary winding, said primary winding having a first inductance; and a differentiator that includes at least one resistive element coupled with said primary winding, thereby forming a closed circuit with said pulsed voltage source, said differentiator is configured to electromagnetically induce an induced pulsed voltage on said secondary winding; wherein said induced pulsed voltage is indicative of said pulsed voltage source.
G01R 29/02 - Measuring characteristics of individual pulses, e.g. deviation from pulse flatness, rise time or duration
G01R 19/04 - Measuring peak values of AC or of pulses
G01R 29/027 - Indicating that a pulse characteristic is either above or below a predetermined value or within or beyond a predetermined range of values
A GaN field effect transistor (FET) including a plurality of transistor cells. A gate metal layer of a transistor cell includes a gate-drain overhang (width 0.2 um to 2.5 um) and a gate-source overhang (width 0.3 um to 1 um), and a widening at each narrow edge of the transistor cell, wherein the width of the widening of gate metal layer (150) is of 2-5 um. A metal (1) layer of the transistor sell extends beyond metal (0) layer. A last metal layer includes a drain plate and a source plate, each having a trapezoid form. More than two vias are located at a widening for connecting the gate metal layer to the gate bus. More than six vias distributed along the longitudinal dimension of the transistor cell connect metal (1) layer to metal (0) layer. A plurality of type 2 vias connect metal (1) layer to the last metal layer.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
A device for switching a high-voltage source, comprising: a plurality of switching devices coupled in series starting from a first switching device and ending in a last switching device, said device enabling coupling of said high-voltage source with at least a selected one of said switching devices; a voltage limiter coupled with said switching devices; and a switching time synchronizer; wherein said first switching device is configured to directly receive a control signal for changing a switching state of said device, said first switching device is configured to facilitate a cascaded transition of switching states in successive said switching devices in said series, where said switching time synchronizer is configured to synchronize a time at which transitions to said switching states of successive said switching devices take effect, and said voltage limiter is configured to limit overvoltage conditions to said switching devices during said transitions.
H03K 17/296 - Modifications to provide a choice of time-intervals for executing more than one switching action and automatically terminating their operation after the programme is completed
H03K 17/284 - Modifications for introducing a time delay before switching in field-effect transistor switches
H03K 17/00 - Electronic switching or gating, i.e. not by contact-making and -breaking
25.
POWER DEVICE FOR HIGH VOLTAGE AND HIGH CURRENT SWITCHING
An apparatus includes a circuitry to perform a high current and/or a high voltage switching. The circuitry includes a first Gallium Nitride (Ga N) on a silicon (Si) substrate lateral field effect transistor. A source terminal of the first Ga N lateral field effect transistor on the Si substrate includes an electrical connection to backside of P-type Si substrate through a high voltage isolated resistor that is coupled to a source terminal or a second resistor that is operably coupled to a drain terminal and a substrate terminal. The high voltage isolated resistor and the second resistor cause to a leakage current from the drain terminal to the source terminal via a buffer layer. The leakage current equalizes the voltage drop on the first Ga N lateral field effect transistor on the Si substrate to a voltage drop on a serially connected second Ga N lateral field effect transistor on the Si substrate.
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
A GaN field effect transistor (FET) including a plurality of transistor cells. A gate metal layer of a transistor cell includes a gate-drain overhang (width 0.2um to 2.5um) and a gate-source overhang (width 0.3um to 1um), and a widening at each narrow edge of the transistor cell, wherein the width of the widening of gate metal layer (150) is of 2-5um. A metal (1) layer of the transistor sell extends beyond metal (0) layer. A last metal layer includes a drain plate and a source plate, each having a trapezoid form. More than two vias are located at a widening for connecting the gate metal layer to the gate bus. More than six vias distributed along the longitudinal dimension of the transistor cell connect metal (1) layer to metal (0) layer. A plurality of type 2 vias connect metal (1) layer to the last metal layer.
H03K 17/16 - Modifications for eliminating interference voltages or currents
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
A switching power device (100) is provided which comprises: a normally-ON transistor (12), a normally-OFF metal-oxide-semiconductor field-effect transistor (MOSFET) (14), the normally-OFF MOSFET (14) being connected in series to a source terminal (12S) of the normally-ON transistor (12), and a driver (16) connected to and arranged to drive a gate terminal (12G) of the normally-ON transistor (12). A switching transistor (28) can then be positioned between the source terminal (12S) of the normally-ON transistor (12) and a common connection (30) of the driver (16) to protect the switching power device (100) from deleterious over-voltage and over-current spikes.
H03K 17/082 - Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
H03K 17/567 - Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H03K 17/693 - Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
H03K 17/74 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of diodes
28.
Power device for high voltage and high current switching
An apparatus includes a circuitry to perform a high current and/or a high voltage switching. The circuitry includes a first Gallium Nitride (GaN) on a silicon (Si) substrate lateral field effect transistor. A source terminal of the first GaN lateral field effect transistor on the Si substrate includes an electrical connection to backside of P-type Si substrate through a high voltage isolated resistor that is coupled to a source terminal or a second resistor that is operably coupled to a drain terminal and a substrate terminal. The high voltage isolated resistor and the second resistor cause to a leakage current from the drain terminal to the source terminal via a buffer layer. The leakage current equalizes the voltage drop on the first GaN lateral field effect transistor on the Si substrate to a voltage drop on a serially connected second GaN lateral field effect transistor on the Si substrate.
H03K 17/30 - Modifications for providing a predetermined threshold before switching
H03K 17/16 - Modifications for eliminating interference voltages or currents
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H03K 3/01 - Circuits for generating electric pulsesMonostable, bistable or multistable circuits Details
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
H03K 17/14 - Modifications for compensating variations of physical values, e.g. of temperature
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
A switching power device (100) is provided which comprises: a normally-ON transistor (12), a normally-OFF metal-oxide-semiconductor field-effect transistor (MOSFET) (14), the normally-OFF MOSFET (14) being connected in series to a source terminal (12S) of the normally-ON transistor (12), and a driver (16) connected to and arranged to drive a gate terminal (12G) of the norraally-ON transistor (12). A switching transistor (28) can then be positioned between the source terminal (12S) of the normally-ON transistor (12) and a common connection (30) of the driver (16) to protect the switching power device (100) from deleterious over-voltage and over-current spikes.
H03K 17/082 - Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
H03K 17/74 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of diodes
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
An embodiment of the invention relates to a semiconductor device comprising: first and second electrodes comprising first and second busbars respectively that decrease in cross section in opposite directions; and a plurality of interleaving first and second conducting fingers that extend from the first and second busbars respectively.
An embodiment of the invention relates to a semiconductor device comprising: first and second electrodes comprising first and second busbars respectively that decrease in cross section in opposite directions; and a plurality of interleaving first and second conducting fingers that extend from the first and second busbars respectively.
H01L 29/745 - Gate-turn-off devices with turn-off by field effect
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
A normally OFF field effect transistor (FET) comprising: a plurality of contiguous nitride semiconductor layers having different composition and heterojunction interfaces between contiguous layers, a Fermi level, and conduction and valence energy bands; a source and a drain overlying a top nitride layer of the plurality of nitride layers and having source and drain access regions respectively comprising regions of at least two of the heterojunctions near the source and drain; a first gate between the source and drain; wherein when there is no potential difference between the gates and a common ground voltage, a two dimensional electron gas (2DEG) is present in the access region at a plurality of heterojunctions in each of the source and drain access regions, and substantially no 2DEG is present adjacent any regions of the heterojunctions under the first gate.
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 29/15 - Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
A field effect transistor (FET) comprises a plurality of substantially parallel conductive channels (252, 254) and at least one electrically conducting plug (209) that traverses and forms an ohmic connection with at least two of the plurality of conductive channels.
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
The invention relates to a method of producing a semiconductor die comprising a desired plurality of interconnected components, the method comprising: producing on a wafer a number of the components greater than the desired plurality of components; testing the produced components for acceptable functioning; and interconnecting a number of acceptably functioning components equal to the desired plurality.
A semiconductor device comprising: a stack having a plurality of semiconductor layers; a first conducting terminal having electrical contact with layers in the stack; and a second terminal comprising first and second metallic components that interface with layers in the stack at first and second Schottky junctions and have work functions ϕ1 and ϕ2 respectively that satisfy a relationship ϕ1> ϕ2; wherein the metal components are spatially configured so that when the Schottky junctions are back biased, a depletion region generated at the first Schottky junction enhances isolation of the second metal component from mobile current carriers in the device.
A semiconductor die assembly comprising: a semiconductor die (80) having die pads for electrically connecting the die to external circuitry; and a submount (100) which supports the die (80) and has a conductor electrically connected to a die pad of the semiconductor die (80) by a plurality of relatively small diameter bondwires and a submount pad electrically connected to the conductor and having a surface configured to be electrically connected to a relatively large diameter bondwire (140).
H01L 23/49 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions wire-like
A normally OFF field effect transistor (FET) comprising: a plurality of contiguous nitride semiconductor layers having different composition and heterojunction interfaces between contiguous layers, a Fermi level, and conduction and valence energy bands; a source and a drain overlying a top nitride layer of the plurality of nitride layers and having source and drain access regions respectively comprising regions of at least two of the heterojunctions near the source and drain; a first gate between the source and drain; wherein when there is no potential difference between the gates and a common ground voltage, a two dimensional electron gas (2DEG) is present in the access region at a plurality of heterojunctions in each of the source and drain access regions, and substantially no 2DEG is present adjacent any regions of the heterojunctions under the first gate.
A normally OFF field effect transistor (FET) having a plurality of contiguous nitride semiconductor layers having different composition and heterojunction interfaces, wherein when there is no potential difference between a first gate and a common ground voltage, a two dimensional electron gas (2DEG) is present at a plurality of heterojunctions in each of a source access region and a drain access region, and substantially no 2DEG is present adjacent any regions of the heterojunctions under the first gate.
A normally OFF field effect transistor (FET) comprising: a plurality of contiguous nitride semiconductor layers having different composition and heterojunction interfaces between contiguous layers, a Fermi level, and conduction and valence energy bands; a source and a drain overlying a top nitride layer of the plurality of nitride layers and having source and drain access regions respectively comprising regions of at least two of the heterojunctions near the source and drain; a first gate between the source and drain; wherein when there is no potential difference between the gates and a common ground voltage, a two dimensional electron gas (2DEG) is present in the access region at a plurality of heterojunctions in each of the source and drain access regions, and substantially no 2DEG is present adjacent any regions of the heterojunctions under the first gate.
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
patents
