Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented α(110) grains having a resistivity less than 9 μΩ-cm and thickness less than 300 Å, with no discernable β-phase. A resulting thin ruthenium film has a resistivity less than 10 μΩ-cm and a thickness less than 300 Å.
A UV-assisted system for stripping a photoresist from a semiconductor substrate that comprises an ultraviolet (UV) exposure station (“UV station”) having a UV radiation source and a UV controller. The UV station is adapted to receive the substrate and to apply UV radiation over an entire surface of the substrate, wherein the UV radiation changes material properties of the photoresist and loosening bonding of the photoresist to the substrate. The system further incudes at least one additional station adapted to receive the substrate after exposure to UV in the UV station and to remove the loosened photoresist from the substrate. The UV controller is configured to modify the dose set point by taking into account an area of the wafer, and an angle of dispersion of the UV radiation from the UV radiation source.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
3.
UV ASSISTED STRIP (UVAS) OF PHOTORESIST TO REALIZE ESG AND 3D INTEGRATION TARGETS
A UV-assisted system for stripping a photoresist from a semiconductor substrate that comprises an ultraviolet (UV) exposure station ("UV station") having a UV radiation source and a UV controller. The UV station is adapted to receive the substrate and to apply UV radiation over an entire surface of the substrate, wherein the UV radiation changes material properties of the photoresist and loosening bonding of the photoresist to the substrate. The system further incudes at least one additional station adapted to receive the substrate after exposure to UV in the UV station and to remove the loosened photoresist from the substrate. The UV controller is configured to modify the dose set point by taking into account an area of the wafer, and an angle of dispersion of the UV radiation from the UV radiation source.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
B08B 3/08 - Cleaning involving contact with liquid the liquid having chemical or dissolving effect
4.
APPARATUS FOR SEMICONDUCTOR SOLVENT PROCESSING UTILIZED FOR 3D AND TRADITIONAL PROCESS FLOWS
A system and method for removing organic materials from a surface of a substrate are provided, where the organic materials can include photoresist, temporary bonding materials, adhesives, fluxes, and their respective residues. In the system and method, the substrate is immersed in a first fluid in an immersion station. The substrate is transported from the immersion station to a process chamber, where the substrate is sprayed via a high-velocity spray nozzle with a second fluid in the process chamber. The first fluid and the second fluid is incompatible with stainless steel, and the organic materials are removed from the surface of the substrate via the immersion of the substrate in the first fluid and the spraying of the substrate via the second fluid.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
An immersion station for performing lift off of metals and other materials (e.g., organic or inorganic films) from a plurality of wafers comprises an immersion chamber having a conical bottom portion, a drain coupled thereto, a spray bar having nozzles adapted to spray chemical solvent at a high flow rate into the immersion chamber, and an immersion tool positioned within the chamber having a cassette with compartments for holding a plurality of wafers, wherein the immersion tool has openings for exposure to the chemical solvent spray. The immersion tool and the spray bar nozzles are configured so as to provide an even distribution of solvent across the plurality of wafers in the cassette to induce metals to lift off from the plurality of wafers, and solvent and metal debris removed from the wafers flows downwardly to the conical bottom portion which directs the flow into the drain.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
6.
AN APPARATUS FOR SEMICONDUCTOR SOLVENT PROCESSING UTILIZED FOR 3D AND TRADITIONAL PROCESS FLOWS
A system and method for removing organic materials from a surface of a substrate are provided, where the organic materials can include photoresist, temporary bonding materials, adhesives, fluxes, and their respective residues. In the system and method, the substrate is immersed in a first fluid in an immersion station. The substrate is transported from the immersion station to a process chamber, where the substrate is sprayed via a high-velocity spray nozzle with a second fluid in the process chamber. The first fluid and the second fluid is incompatible with stainless steel, and the organic materials are removed from the surface of the substrate via the immersion of the substrate in the first fluid and the spraying of the substrate via the second fluid.
An immersion station for performing lift off of metals and other materials (e.g., organic or inorganic films) from a plurality of wafers comprises an immersion chamber having a conical bottom portion, a drain coupled thereto, a spray bar having nozzles adapted to spray chemical solvent at a high flow rate into the immersion chamber, and an immersion tool positioned within the chamber having a cassette with compartments for holding a plurality of wafers, wherein the immersion tool has openings for exposure to the chemical solvent spray. The immersion tool and the spray bar nozzles are configured so as to provide an even distribution of solvent across the plurality of wafers in the cassette to induce metals to lift off from the plurality of wafers, and solvent and metal debris removed from the wafers flows downwardly to the conical bottom portion which directs the flow into the drain.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B08B 3/02 - Cleaning by the force of jets or sprays
B08B 3/04 - Cleaning involving contact with liquid
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
A chemical vapor deposition system includes a reaction chamber having an exhaust system and a gas injector having at least one injection zone. The system further includes a heater assembly for heating the reaction chamber. In accordance with the present disclosure, the gas injector is additively manufactured to form a unitary body.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
B33Y 80/00 - Products made by additive manufacturing
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
A chemical vapor deposition system (CVD) adapted to capture a temperature of a silicon carbide layer grown on a wafer includes a reaction chamber adapted to grow a. silicon carbide layer epitaxially on wafers present within the chamber, a wafer carrier having a platform for carrying at least one wafer, a light source that emits radiation of a prescribed wavelength toward the wafer carrier, a first pyrometer coupled to the reaction chamber and configured to receive radiation emitted or reflected from the wafer and to measure radiation intensity of the prescribed wavelength, a reflectometer coupled to the pyrometer configured to receive and measure radiation of the prescribed wavelength reflected from tire wafer in response to the radiation emitted by the light source, and an electronic controller configured to determine a temperature of the silicon carbide layer grown on the wafer using measurements of tire first pyrometer and reflectometer.
A chemical vapor deposition system includes a reaction chamber having an exhaust system and a gas injector having at least one injection zone. The system further includes a heater assembly for heating the reaction chamber. In accordance with the present disclosure, the gas injector is additively manufactured to form a unitary body.
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
A chemical vapor deposition system (CVD) adapted to capture a temperature of a silicon carbide layer grown on a wafer includes a reaction chamber adapted to grow a silicon carbide layer epitaxially on wafers present within the chamber, a wafer carrier having a platform for carrying at least one wafer, a light source that emits radiation of a prescribed wavelength toward the wafer carrier, a first pyrometer coupled to the reaction chamber and configured to receive radiation emitted or reflected from the wafer and to measure radiation intensity of the prescribed wavelength, a reflectometer coupled to the pyrometer configured to receive and measure radiation of the prescribed wavelength reflected from the wafer in response to the radiation emitted by the light source, and an electronic controller configured to determine a temperature of the silicon carbide layer grown on the wafer using measurements of the first pyrometer and reflectometer.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/48 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
C23C 16/52 - Controlling or regulating the coating process
G01J 5/00 - Radiation pyrometry, e.g. infrared or optical thermometry
G01J 5/0806 - Focusing or collimating elements, e.g. lenses or concave mirrors
G01J 5/58 - Radiation pyrometry, e.g. infrared or optical thermometry using absorptionRadiation pyrometry, e.g. infrared or optical thermometry using extinction effect
12.
FLARED SHUTTER LINER FOR CHEMICAL VAPOR DEPOSITION SYSTEM
A shutter liner for use in a chemical vapor deposition (CVD) system includes an upper portion that has a cylindrical shape and a lower portion that has an outwardly flared shape. The outwardly flared shape reduces deposition within the reaction chamber by providing an outwardly angled wall surface that occupies a horizontal gap between inner and outer liners that are contained within the reaction chamber.
C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
13.
ELECTROSTATIC CHUCK FOR ION BEAM DEPOSITION SYSTEMS
An electrostatic chuck for ion beam deposition systems having an assist beam and that can be operated at elevated temperature. The electrostatic chuck includes or is operably connected to a power source capable of outputting at least 1 milliAmp of current, to provide a nominal voltage of at least 150V (+150V or -150V) and a total voltage differential, whether for a monopolar source or across multiple power sources, of at least 300V. The power source is isolated or floating with respect to ground.
C23C 14/35 - Sputtering by application of a magnetic field, e.g. magnetron sputtering
C23C 14/54 - Controlling or regulating the coating process
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
14.
ELECTROSTATIC CHUCK FOR ION BEAM DEPOSITION SYSTEMS
An electrostatic chuck for ion beam deposition systems having an assist beam and that can be operated at elevated temperature. The electrostatic chuck includes or is operably connected to a power source capable of outputting at least 1 milliAmp of current, to provide a nominal voltage of at least 150V (+150V or −150V) and a total voltage differential, whether for a monopolar source or across multiple power sources, of at least 300V. The power source is isolated or floating with respect to ground.
H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
15.
FLARED SHUTTER LINER FOR CHEMICAL VAPOR DEPOSITION SYSTEM
A shutter liner for use in a chemical vapor deposition (CVD) system includes an upper portion that has a cylindrical shape and a lower portion that has an outwardly flared shape. The outwardly flared shape reduces deposition within the reaction chamber by providing an outwardly angled wall surface that occupies a horizontal gap between inner and outer liners that are contained within the reaction chamber.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Ion beam deposition processes, with assist or etch, that produce a tungsten interconnect and an inserted layer that can have a graduated composition in contact with an underlayer. The interconnect has the desirable alpha phase of the tungsten layer and a microstructure with highly oriented (110) grains with at least 95%, or at least 99% or 99.9% and even 100%, of the deposited tungsten thin film having a (110) crystalline orientation plane, relative to the top surface of the film.
Ion beam deposition processes, with assist or etch, that produce a tungsten interconnect and an inserted layer that can have a graduated composition in contact with an underlayer. The interconnect has the desirable alpha phase of the tungsten layer and a microstructure with highly oriented (110) grains with at least 95%, or at least 99% or 99.9% and even 100%, of the deposited tungsten thin film having a (110) crystalline orientation plane, relative to the top surface of the film.
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
18.
ELECTRICAL ISOLATION OF GAS FEED FOR ION BEAM SYSTEM
A gas inlet for a high voltage ion beam system, the gas inlet providing an insulating barrier between the high voltage components to which the gas is supplied and the grounded gas supply lines. The gas inlet inhibits electrical breakdown of the system by inhibiting energized particles, or plasma, from contacting the grounded gas supply lines. The gas inlet maximizes the path length to the grounded gas supply line, has electrically insulating material in the path with a designed gas conductance path, and utilizes a transverse magnetic field.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
19.
ELECTRICAL ISOLATION OF GAS FEED FOR ION BEAM SYSTEM
A gas inlet for a high voltage ion beam system, the gas inlet providing an insulating barrier between the high voltage components to which the gas is supplied and the grounded gas supply lines. The gas inlet inhibits electrical breakdown of the system by inhibiting energized particles, or plasma, from contacting the grounded gas supply lines. The gas inlet maximizes the path length to the grounded gas supply line, has electrically insulating material in the path with a designed gas conductance path, and utilizes a transverse magnetic field.
A chemical vapor deposition system includes a reaction chamber and a removable wafer carrier including a wafer carrier body that is configured to support a wafer. The system includes a removable cover plate that supports the wafer carrier body and a susceptor base is disposed below the cover plate that supports the cover plate. The removable cover plate is in a nested arrangement with respect to the susceptor base as a result of first nesting structure of the removable cover plate mating with a second nesting structure of the susceptor base.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
21.
CHEMICAL VAPOR DEPOSITION SYSTEM WITH HOT-WALL HYBRID FLOW REACTOR AND REMOVABLE REACTOR FLOOR
A chemical vapor deposition system includes a reaction chamber and a removable wafer carrier including a wafer carrier body that is configured to support a wafer. The system includes a removable cover plate that supports the wafer carrier body and a susceptor base is disposed below the cover plate that supports the cover plate. The removable cover plate is in a nested arrangement with respect to the susceptor base as a result of first nesting structure of the removable cover plate mating with a second nesting structure of the susceptor base.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
Machines for surface deposition, namely, chemical vapor
deposition machines, chemical vapor deposition processing
chambers, physical vapor deposition machines, machines for
performing epitaxial growth on semiconductor wafers, epitaxy
reactors; semiconductor processing machines for the
manufacture of substrates, namely, semiconductor substrate
manufacturing machines; semiconductor processing machines
for the manufacture of semiconductor wafers, namely,
semiconductor wafer processing machines; semiconductor wafer
processing equipment; machines for the production of
semiconductors, namely, semiconductor manufacturing
machines; manufacturing process equipment systems, namely
semiconductor fabrication machines, and component parts
thereof.
An in situ cleaning of the vessel of an ion deposition/etching system that includes utilizing the E-mode of the system and increasing plasma potential to remove material deposited on the vessel walls. The method includes operating the system with plasma only, no grid bias, minimal gas flow and high RF power level. During this cleaning mode, radially moving capacitively coupled ions impinge on the vessel inner wall, etching undesired back scattered material from the wall.
in situin situ cleaning of the vessel of an ion deposition/etching system that includes utilizing the E-mode of the system and increasing plasma potential to remove material deposited on the vessel walls. The method includes operating the system with plasma only, no grid bias, minimal gas flow and high RF power level. During this cleaning mode, radially moving capacitively coupled ions impinge on the vessel inner wall, etching undesired back scattered material from the wall.
A method of cleaning wafer carriers includes the steps of: 1) loading a wafer carrier in need of cleaning into a cleaning chamber, injecting one or more cleaning gases into the cleaning chamber; 2) activating the one or more cleaning gases at a temperature ranging from about 400° C. to about 1000° C. under a pressure ranging from about 100 Torr to about 760 Torr; 3) exposing surfaces of the wafer carrier to the activated one or more cleaning gases; and 4) inspecting the wafer carrier surfaces using one or more surface characterization tools to determine if the wafer carrier has been cleaned.
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/54 - Apparatus specially adapted for continuous coating
An ion beam system including an integrated power control system between the power supplies and the grids. The power control system includes a fast, high-power solid state switch such as an insulated gate bipolar transistor (IGBT). The power control system may include a resistor array, e.g., to dissipate current surge. The integrated power control system provides synchronous operation of the grid power supplies.
An ion beam system including an integrated power control system between the power supplies and the grids. The power control system includes a fast, high power solid state switch such as an insulated gate bipolar transistor (IGBT). The power control system may include a resistor array, e.g., to dissipate current surge. The integrated power control system provides synchronous operation of the grid power supplies.
Machines for surface deposition, namely, chemical vapor deposition machines, chemical vapor deposition processing chambers, physical vapor deposition machines, machines for performing epitaxial growth on semiconductor wafers, epitaxy reactors; semiconductor processing machines for the manufacture of substrates, namely, semiconductor substrate manufacturing machines; semiconductor processing machines for the manufacture of semiconductor wafers, namely, semiconductor wafer processing machines; semiconductor wafer processing equipment; machines for the production of semiconductors, namely, semiconductor manufacturing machines; manufacturing process equipment systems, namely semiconductor fabrication machines, and component parts thereof
An in situ cleansing of grids of an ion beam system, such as a deposition and/or etching system, that includes applying a negative bias on the downstream-most grid and etching redeposited material from the grid. Any or all of the chamber pressure of the system, the extraction current in the ion beam source, the beam divergence, and perveance can be adjusted with the deceleration grid bias. The methods of this disclosure can be applied to any gridded ion source systems, including those with an assist ion beam.
in situin situ cleansing of grids of an ion beam system, such as a deposition and/or etching system, that includes applying a negative bias on the downstream-most grid and etching redeposited material from the grid. Any or all of the chamber pressure of the system, the extraction current in the ion beam source, the beam divergence, and perveance can be adjusted with the deceleration grid bias. The methods of this disclosure can be applied to any gridded ion source systems, including those with an assist ion beam.
A multi-wafer metal organic chemical vapor deposition system in which adjacent wafers positioned within the system rotate about their own axes, including a reaction chamber comprising an exhaust system including a peripheral port, a multi-wafer carrier comprising a wafer carrier body and a plurality of wafer carrier discs supported within the wafer carrier body, wherein adjacent wafer carrier discs of the plurality wafer carrier discs are configured and the wafer carrier body are configured to rotate at different speeds, a multi-zone injection block positioned over the wafer carrier body, a central gas port positioned in the center of the wafer carrier body functions as a gas exhaust, and a multi-zone heater assembly positioned beneath the multi-wafer carrier.
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
C23C 14/56 - Apparatus specially adapted for continuous coatingArrangements for maintaining the vacuum, e.g. vacuum locks
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/52 - Controlling or regulating the coating process
32.
MULTI-DISC CHEMICAL VAPOR DEPOSITION SYSTEM WITH CROSS FLOW GAS INJECTION
A multi-wafer metal organic chemical vapor deposition system in which adjacent wafers positioned within the system rotate about their own axes, including a reaction chamber comprising an exhaust system including a peripheral port, a multi-wafer carrier comprising a wafer carrier body and a plurality of wafer carrier discs supported within the wafer carrier body, wherein adjacent wafer carrier discs of the plurality wafer carrier discs are configured and the wafer carrier body are configured to rotate at different speeds, a multi-zone injection block positioned over the wafer carrier body, a central gas port positioned in the center of the wafer carrier body that can be configured as a gas exhaust or a gas injection port, and a multi-zone heater assembly positioned beneath the multi-wafer carrier.
C30B 25/10 - Heating of the reaction chamber or the substrate
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
A multi-wafer metal organic chemical vapor deposition system in which adjacent wafers positioned within the system rotate about their own axes, including a reaction chamber comprising an exhaust system including a peripheral port, a multi-wafer carrier comprising a wafer carrier body and a plurality of wafer carrier discs supported within the wafer carrier body, wherein adjacent wafer carrier discs of the plurality wafer carrier discs are configured and the wafer carrier body are configured to rotate at different speeds, a multi-zone injection block positioned over the wafer carrier body, a central gas port positioned in the center of the wafer carrier body functions as a gas exhaust, and a multi-zone heater assembly positioned beneath the multi-wafer carrier.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
34.
MULTI-DISC CHEMICAL VAPOR DEPOSITION SYSTEM WITH CROSS FLOW GAS INJECTION
A multi-wafer metal organic chemical vapor deposition system in which adjacent wafers positioned within the system rotate about their own axes, including a reaction chamber comprising an exhaust system including a peripheral port, a multi-wafer carrier comprising a wafer carrier body and a plurality of wafer carrier discs supported within the wafer carrier body, wherein adjacent wafer carrier discs of the plurality wafer carrier discs are configured and the wafer carrier body are configured to rotate at different speeds, a multi-zone injection block positioned over the wafer carrier body, a central gas port positioned in the center of the wafer carrier body that can be configured as a gas exhaust or a gas injection port, and a multi-zone heater assembly positioned beneath the multi-wafer carrier.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C30B 25/10 - Heating of the reaction chamber or the substrate
A substrate processing system in accordance with one embodiment includes a processing chamber and an optical pyrometer assembly to measure an emitted thermal radiation originating substantially from a portion of target surfaces. The optical pyrometer includes a lightpipe that comprises a core and a hollow sheath surrounding the core. The core and the sheath are concentric with one another. The sheath is formed by a chemical vapor deposition process and includes local protrusions within a hollow interior thereof to maintain a position of the core within the sheath. In particular, the local protrusions are formed so as to center at least a distal end portion of the core within the sheath. A temperature of the target surface is determined from an intensity of a portion of the emitted thermal radiation near at least one wavelength.
A substrate processing system in accordance with one embodiment includes a processing chamber and an optical pyrometer assembly to measure an emitted thermal radiation originating substantially from a portion of target surfaces. The optical pyrometer includes a lightpipe that comprises a core and a hollow sheath surrounding the core. The core and the sheath are concentric with one another. The sheath is formed by a chemical vapor deposition process and includes local protrusions within a hollow interior thereof to maintain a position of the core within the sheath. In particular, the local protrusions are formed so as to center at least a distal end portion of the core within the sheath. A temperature of the target surface is determined from an intensity of a portion of the emitted thermal radiation near at least one wavelength.
Methods for forming a low resistivity ruthenium (Ru) thin film that include depositing ruthenium onto a substrate via ion beam deposition with assist in a process chamber having reactive and noble gas species therein. The substrate is at at least 250°C. A resulting thin ruthenium film has a thickness of no more than 30 nm, a resistivity less than 12 µΩ-cm and a crystalline structure comprising grains having a (0001) orientation. The resistivity will differ at different thickness; for example, less than 9 µΩ-cm for films of 50 nm and thicker, less than 9.5 µΩ-cm for films of 35 nm and thicker, less than 11 µΩ-cm for films of 20 nm and thicker, less than 15 µΩ-cm for films of 10 nm and thicker or less than 20 µΩ-cm for films of 2 nm and thicker. The grains have a mean grain size at least three times the film thickness.
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
C23C 14/02 - Pretreatment of the material to be coated
A wafer carrier includes a base including a generally planar bottom surface and a top surface that includes a plurality of platforms extending above the top surface. The wafer carrier includes a thermal cover defining a plurality of pockets. The thermal cover is configured to be coupled to the base by at least one fastener and the plurality of pockets are arranged such that each pocket of the plurality of pockets is aligned with a corresponding platform of the plurality of the platforms when the thermal cover is supported by a plurality of first pedestals that extend from the top surface of the base. A plurality of second pedestals are located along the plurality of platforms for supporting the one or more wafers, wherein each platform includes at least one second pedestal that extends from a top surface of the platform for supporting one wafer.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Methods for forming a low resistivity ruthenium (Ru) thin film that include depositing ruthenium onto a substrate via ion beam deposition with assist ion beam in a process chamber having reactive and noble gas species therein. The substrate is at at least 250° C. A resulting thin ruthenium film has a thickness of no more than 30 nm, a resistivity less than 12 μ·cm and a crystalline structure comprising grains having a (0001) orientation. The resistivity will differ at different thickness; for example, less than 9 μΩ-cm for films of 50 nm and thicker, less than 9.5 μΩ-cm for films of 35 nm and thicker, less than 11 μΩ-cm for films of 20 nm and thicker, less than 15 μΩ-cm for films of 10 nm and thicker or less than 20 μΩ-cm for films of 2 nm and thicker. The grains have a mean grain size at least three times the film thickness.
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
A wafer carrier includes a base including a generally planar bottom surface and a top surface that includes a plurality of platforms extending above the top surface. The wafer carrier includes a thermal cover defining a plurality of pockets. The thermal cover is configured to be coupled to the base by at least one fastener and the plurality of pockets are arranged such that each pocket of the plurality of pockets is aligned with a corresponding platform of the plurality of the platforms when the thermal cover is supported by a plurality of first pedestals that extend from the top surface of the base. A plurality of second pedestals are located along the plurality of platforms for supporting the one or more wafers, wherein each platform includes at least one second pedestal that extends from a top surface of the platform for supporting one wafer.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented α(110) grains having a resistivity less than 10 μΩ-cm and thickness less than 300 Å, with no discernable β-phase. A resulting thin ruthenium film has a resistivity less than 12 μΩ-cm and a thickness less than 300 Å.
High bandwidth time-and-space resolved scatter phase transition microscopy systems configured to detect melt onset in a wafer being processed by laser annealing systems with ultra-short dwell times and spot size.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B23K 26/354 - Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
High bandwidth time-and-space resolved scatter phase transition microscopy systems configured to detect melt onset in a wafer being processed by laser annealing systems with ultra-short dwell times and spot size.
G01N 25/02 - Investigating or analysing materials by the use of thermal means by investigating changes of state or changes of phaseInvestigating or analysing materials by the use of thermal means by investigating sintering
G01J 5/00 - Radiation pyrometry, e.g. infrared or optical thermometry
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
44.
Laser Spike Annealing Process Temperature Calibration Utilizing Photoluminescence Measurements
Temperature measurement techniques for device structures formed from detectable bandgap semiconducting materials based on photoluminescence (PL) spectroscopy. Laser annealing temperature calibrations for process temperature control are derived from PL measurements and the derived laser annealing temperature calibrations are implemented in process controllers of laser annealing systems to control an operating parameter of an annealing laser.
Device for achieving homogeneous thickness growth and doping on a semiconductor wafer (2) with a diameter greater than 100 mm during growth at elevated temperature in a growth chamber arranged in a reactor housing comprising a growth chamber (14) with a wafer (2) on a rotating susceptor (3), where the growth chamber (14) has, an inlet channel (17) for the supply of process gases and an outlet channel (18) for discharge of unused process gases to create a process gas flow over the semiconductor wafer (2), and an injector (4) at the end of the inlet channel (17) where it opens into the growth chamber (14), where the injector (4) is divided into at least 3 gas ducts with a first gas duct B and at each side of it a second gas channel A and a third gas channel C, and where the magnitude of the gas flow in the gas duct B and gas concentrations in the gas duct B are arranged to be controlled independent of gas flows and gas concentrations in gas channels A and C.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
46.
WAFER CARRIER ASSEMBLY WITH PEDESTAL AND COVER RESTRAINT ARRANGEMENTS THAT CONTROL THERMAL GAPS
A wafer carrier assembly as described herein improves thermal control across a top surface thereof to maintain highly controlled deposition locations and thicknesses.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
47.
WAFER CARRIER ASSEMBLY WITH PEDESTAL AND COVER RESTRAINT ARRANGEMENTS THAT CONTROL THERMAL GAPS
A wafer carrier assembly as described herein improves thermal control across a top surface thereof to maintain highly controlled deposition locations and thicknesses.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
09 - Scientific and electric apparatus and instruments
Goods & Services
Machines and apparatus for manufacturing, namely, physical,
chemical and electro technical equipment and parts
therefore, diamond like carbon systems, ion beam deposition
systems and ion beam sources therefore, ion beam etch
systems, physical vapor deposition systems, lapping/dicing
systems, thermal deposition sources; machines and apparatus
for manufacturing, namely, molecular beam epitaxy (MBE)
systems including components therefore and metal organic
chemical vapor deposition (MOCVD) systems including wafer
carriers and components therefore, and wafer processing
machines including components therefore; laser annealing
systems comprised of lasers for annealing purposes including
components therefore; photolithographic machines for
manufacturing semiconductor wafers and other substrates
including components therefore; semiconductor wafer
processing machines for atomic layer deposition systems
including components therefore; semiconductor wafer
processing equipment; semiconductor single wafer processing
machines using etch chemicals for the semiconductor
industry; semiconductor single wafer wet processing machines
using solvent chemicals; machines containing ion sources and
ion source controllers for vacuum coating processes;
molecular beam epitaxy crucibles and effusion cells for
manufacturing semi-conductors and integrated circuits;
heated high speed rotating disks operated under high vacuum
and exposed to the flow of chemicals in the production of
semiconductors; optical coating ion beam machine for coating
multi-layer optical thin films including components
therefore. Gas sensors and controls for regulating gas concentrations
and/or mass transfer rates in various manufacturing
processes; computer control software for use in ion beam
system applications through touch screen mode.
09 - Scientific and electric apparatus and instruments
Goods & Services
Machines and apparatus for manufacturing, namely, physical,
chemical and electro technical equipment and parts
therefore, diamond like carbon systems, ion beam deposition
systems and ion beam sources therefore, ion beam etch
systems, physical vapor deposition systems, lapping/dicing
systems, thermal deposition sources; machines and apparatus
for manufacturing, namely, molecular beam epitaxy (MBE)
systems including components therefore and metal organic
chemical vapor deposition (MOCVD) systems including wafer
carriers and components therefore, and wafer processing
machines including components therefore; laser annealing
systems comprised of lasers for annealing purposes including
components therefore; photolithographic machines for
manufacturing semiconductor wafers and other substrates
including components therefore; semiconductor wafer
processing machines for atomic layer deposition systems
including components therefore; semiconductor wafer
processing equipment; semiconductor single wafer processing
machines using etch chemicals for the semiconductor
industry; semiconductor single wafer wet processing machines
using solvent chemicals; machines containing ion sources and
ion source controllers for vacuum coating processes;
molecular beam epitaxy crucibles and effusion cells for
manufacturing semi-conductors and integrated circuits;
heated high speed rotating disks operated under high vacuum
and exposed to the flow of chemicals in the production of
semiconductors; optical coating ion beam machine for coating
multi-layer optical thin films including components
therefore. Gas sensors and controls for regulating gas concentrations
and/or mass transfer rates in various manufacturing
processes; computer control software for use in ion beam
system applications through touch screen mode.
09 - Scientific and electric apparatus and instruments
Goods & Services
Manufacturing machines and apparatus, namely, physical,
chemical and electro technical equipment, and parts
therefore, diamond like carbon systems, ion beam deposition
systems and ion beam sources therefore, ion beam etch
systems, physical vapor deposition systems, lapping/dicing
systems, thermal deposition sources; semiconductor
fabrication machines and magnetic storage fabrication
machines including components therefore; manufacturing
machines and apparatus, namely, molecular beam epitaxy (MBE)
systems including components therefore and metal organic
chemical vapor deposition (MOCVD) systems including wafer
carriers and components therefore, wafer processing machines
including components therefore; laser annealing systems
comprised of lasers for annealing purposes including
components therefore; photolithographic machines for
manufacturing semiconductor wafers and other substrates
including components therefore; semiconductor wafer
processing machines for atomic layer deposition systems
including components therefore; semiconductor wafer
processing equipment; semiconductor single wafer processing
machines using etch chemicals for the semiconductor
industry; semiconductor single wafer wet processing machines
using solvent chemicals; machines containing ion sources and
ion source controllers for vacuum coating processes;
molecular beam epitaxy crucibles and effusion cells for
manufacturing semi-conductors and integrated circuits;
heated high speed rotating disks operated under high vacuum
and exposed to the flow of chemicals in the production of
semiconductors; optical coating ion beam machine for coating
multi-layer optical thin films including components
therefore; physical vapor deposition systems, lapping/dicing
systems; semiconductor fabrication machines and magnetic
storage fabrication machines including components therefore;
metal organic chemical vapor deposition (MOCVD) systems,
wafer processing machines including components therefore;
photolithographic machines for manufacturing semiconductor
wafers and other substrates including components therefore;
semiconductor wafer processing machines for atomic layer
deposition systems including components therefore;
semiconductor wafer processing equipment; semiconductor
single wafer processing machines using etch chemicals for
the semiconductor industry; semiconductor single wafer wet
processing machines using solvent chemicals; machines
containing ion sources and ion source controllers for vacuum
coating processes; heated high speed rotating disks operated
under high vacuum and exposed to the flow of chemicals in
the production of semiconductors; optical coating ion beam
machine for coating multi-layer optical thin films including
components therefore. Scientific machines and apparatus, namely, physical,
chemical and electro technical equipment, and parts
therefore, diamond like carbon systems, ion beam deposition
systems and ion beam sources therefore, ion beam etch
systems, thermal deposition sources; scientific machines and
apparatus, namely, molecular beam epitaxy (MBE) systems
including components therefore and including wafer carriers
and components therefore; laser annealing systems comprised
of lasers for annealing purposes including components
therefore; gas sensors and controls for regulating gas
concentrations and/or mass transfer rates in various
manufacturing processes; molecular beam epitaxy crucibles
and effusion cells for manufacturing semi-conductors and
integrated circuits; computer control software for use in
ion beam system applications through touch screen mode; gas
sensors and controls for regulating gas concentrations
and/or mass transfer rates in various manufacturing
processes; computer control software for use in ion beam
system applications through touch screen mode.
51.
Rotating Disk Reactor with Split Substrate Carrier
A self-centering split substrate carrier that supports a semiconductor substrate in a CVD system includes a first section configured to be centrally located in the split substrate carrier having a top surface with a recessed area for receiving a substrate for CVD processing and comprising a plurality of apertures positioned in an outer surface. A second section formed in a ring-shape having an inner surface configured to receive the first section and an outer surface configured to interface with an edge drive rotation mechanism that rotates the substrate carrier. The inner surface comprising a plurality of boss structures, wherein a respective one of the plurality of boss structures on the inner surface of the second section is configured to fit into a respective one of the plurality of apertures positioned in the outer surface of the first section, so as to improve alignment of the first and the second section of the self-centering split substrate carrier.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
52.
Device and method for ensuring planarity of a semiconductor wafer during epitaxial growth
A device to ensure planarity of a semiconductor wafer during growth at an increased temperature in a growth chamber arranged in a reactor housing where the device includes a growth chamber having a port to allow the deposition of at least one wafer on a rotating susceptor in the growth chamber and the withdrawal of the wafer. The growth chamber has an inlet channel for a supply of process gases and an outlet channel for a discharge of not consumed process gases to create a process gas flow between said channels. Separate heaters are adjacent to the growth chamber to heat the rotating wafer with individually controlled heating zones both above and under the wafer. An instrument measures the bending of the wafer, and an automatic control circuit uses data from temperature sensors or measured data of power supplied to the heaters and the instrument measuring bending of the wafer to change the temperature in said temperature zones so that bending of the wafer is minimized.
C23C 16/52 - Controlling or regulating the coating process
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
53.
Automated batch production thin film deposition systems and methods of using the same
Fully automated batch production thin film deposition systems configured to deliver uniformity combined with high throughput at a low cost-per-wafer. In some examples, systems of the present disclosure include automated safe wafer handling via low-impact batch transfer via transportable wafer racks loaded with a plurality of wafers. In some examples, systems include a modular pre-heat & cool-down architecture that enables a flexible thermal management solution tailored around particular specifications.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
54.
Reactor with centering pin for epitaxial deposition
A substrate reactor with centering pin for epitaxial deposition includes a vacuum chamber and a tube configured to rotate in the vacuum chamber around a tube geometrical center axis. A substrate carrier forming a pocket dimensioned for holding a substrate on a top surface includes an aperture that is centrally located on a bottom surface. The substrate carrier is positioned on and in contact with a top surface of the tube. A centering pin is positioned along a geometrical center axis of rotation of the substrate carrier. The centering pin has a first end positioned in the aperture on the bottom surface of the substrate carrier and a second end fixed inside the reactor so that the substrate carrier rotates around the geometrical center axis of the substrate carrier independent of the geometrical center axis of the tube.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented α(110) grains having a resistivity less than 9 μΩ-cm and thickness less than 300 Å, with no discernable β-phase. A resulting thin ruthenium film has a resistivity less than 10 μΩ-cm and a thickness less than 300 Å.
09 - Scientific and electric apparatus and instruments
Goods & Services
Manufacturing machines and apparatus, namely, semiconductor fabrication machines and magnetic storage fabrication machines; manufacturing machines and apparatus, namely, manufacturing machines and apparatus, namely, molecular beam epitaxy (MBE) systems including components therefore and metal organic chemical vapor deposition (MOCVD) systems including wafer carriers and components therefore, wafer processing machines; photolithographic machines and parts therefore for manufacturing semiconductor wafers and semiconductor substrates; semiconductor wafer processing machines for atomic layer deposition systems; semiconductor wafer processing equipment; semiconductor single wafer processing machines using etch chemicals for the semiconductor industry; semiconductor single wafer wet processing machines using solvent chemicals; machines for semiconductor manufacturing containing ion sources and ion source controllers for vacuum coating processes; molecular beam epitaxy crucibles and effusion cells sold as an integral component of machines for manufacturing semi-conductors and integrated circuits; heated high speed rotating disks operated under high vacuum and exposed to the flow of chemicals in the production of semiconductors sold as an integral component of machines for manufacturing semi-conductors; optical coating ion beam machine for coating multi-layer optical thin films sold as an integral component of machines for manufacturing semi-conductors laser annealing systems comprised of lasers for industrial use for annealing purposes; gas sensors and control valves for regulating gas concentrations and mass transfer rates in various manufacturing processes; downloadable computer control software for use in ion beam system applications through touch screen mode for user control in Ion Beam Deposition (IBD), Ion Beam Etch (IBE) and Sputtering systems
09 - Scientific and electric apparatus and instruments
Goods & Services
Manufacturing machines and apparatus, namely, semiconductor fabrication machines and magnetic storage fabrication machines; manufacturing machines and apparatus, namely, molecular beam epitaxy (MBE) systems including components therefore and metal organic chemical vapor deposition (MOCVD) systems including wafer carriers and components therefore, wafer processing machines; photolithographic machines and parts therefore for manufacturing semiconductor wafers and semiconductor substrates; semiconductor wafer processing machines for atomic layer deposition systems; semiconductor wafer processing equipment; semiconductor single wafer processing machines using etch chemicals for the semiconductor industry; semiconductor single wafer wet processing machines using solvent chemicals; machines for semiconductor manufacturing containing ion sources and ion source controllers for vacuum coating processes; molecular beam epitaxy crucibles and effusion cells sold as an integral component of machines for manufacturing semi-conductors and integrated circuits; heated high speed rotating disks operated under high vacuum and exposed to the flow of chemicals in the production of semiconductors sold as an integral component of machines for manufacturing semi-conductors; optical coating ion beam machine for coating multi-layer optical thin films sold as an integral component of machines for manufacturing semi-conductors laser annealing systems comprised of lasers for industrial use for annealing purposes; gas sensors and control valves for regulating gas concentrations and mass transfer rates in various manufacturing processes; downloadable computer control software for use in ion beam system applications through touch screen mode for user control in Ion Beam Deposition (IBD), Ion Beam Etch (IBE) and Sputtering systems
09 - Scientific and electric apparatus and instruments
Goods & Services
Manufacturing machines and apparatus, namely, semiconductor fabrication machines and magnetic storage fabrication machines; manufacturing machines and apparatus, namely, molecular beam epitaxy (MBE) systems including components therefore and metal organic chemical vapor deposition (MOCVD) systems including wafer carriers and components therefore, wafer processing machines; photolithographic machines and parts therefore for manufacturing semiconductor wafers and semiconductor substrates; semiconductor wafer processing machines for atomic layer deposition systems; semiconductor wafer processing equipment; semiconductor single wafer processing machines using etch chemicals for the semiconductor industry; semiconductor single wafer wet processing machines using solvent chemicals; machines for semiconductor manufacturing containing ion sources and ion source controllers for vacuum coating processes; molecular beam epitaxy crucibles and effusion cells sold as an integral component of machines for manufacturing semi-conductors and integrated circuits; heated high speed rotating disks operated under high vacuum and exposed to the flow of chemicals in the production of semiconductors sold as an integral component of machines for manufacturing semi-conductors; optical coating ion beam machine for coating multi-layer optical thin films sold as an integral component of machines for manufacturing semi-conductors laser annealing systems comprised of lasers for industrial use for annealing purposes; gas sensors and control valves for regulating gas concentrations and mass transfer rates in various manufacturing processes; downloadable computer control software for use in ion beam system applications through touch screen mode for user control in Ion Beam Deposition (IBD), Ion Beam Etch (IBE) and Sputtering systems
Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250°C to produce the metal film. A resulting thin tungsten film has large and highly oriented a(110) grains having a resistivity less than 10 µΩ-cm and thickness less than 300 Å, with no discernable b-phase. A resulting thin ruthenium film has a resistivity less than 12 µΩ-cm and a thickness less than 300 Å.
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
A system for removing flux from openings formed in a substrate that has openings (e.g., sized 20 microns or less) formed therein includes a spay nozzle device that has a spray nozzle arm that is formed at an angle of about 45 degrees or less for discharging fluid towards the openings in the substrate for flux removal. The angle is between about 30 degrees and 45 degrees.
A system for removing flux from openings formed in a substrate that has openings (e.g., sized 20 microns or less) formed therein includes a spay nozzle device that has a spray nozzle arm that is formed at an angle of about 45 degrees or less for discharging fluid towards the openings in the substrate for flux removal. The angle is between about 30 degrees and 45 degrees.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B23K 1/20 - Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
B08B 3/04 - Cleaning involving contact with liquid
B08B 3/02 - Cleaning by the force of jets or sprays
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B08B 5/02 - Cleaning by the force of jets, e.g. blowing-out cavities
62.
Enhanced cathodic ARC source for ARC plasma deposition
An improved cathodic arc source and method of DLC film deposition with a carbon containing directional-jet plasma flow produced inside of cylindrical graphite cavity with depth of the cavity approximately equal to the cathode diameter. The generated carbon plasma expands through the orifice into ambient vacuum resulting in plasma flow strong self-constriction. The method represents a repetitive process that includes two steps: the described above plasma generation/deposition step that alternates with a recovery step. This step provides periodical removal of excessive amount of carbon accumulated on the cavity wall by motion of the cathode rod inside of the cavity in direction of the orifice. The cathode rod protrudes above the orifice, and moves back to the initial cathode tip position. The said steps periodically can be reproduced until the film with target thickness is deposited. Technical advantages include the film hardness, density, and transparency improvement, high reproducibility, long duration operation, and particulate reduction.
A plurality of endpoints in a wet etching process of a substrate are determined. A plurality of benchmark end points during a wet etching process of a first substrate are determined, using first light information represented by a HSV color model for sample locations of the first substrate. Etch parameters are generated for a wet etching process for a second substrate. The generated etch parameters are used with second light information represented by at least one value of the Hue, Saturation, Value color model associated with a plurality of sample locations of the second substrate to reach respective end points during the wet etching process of a second substrate.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
65.
MOLECULAR BEAM EPITAXY SYSTEMS WITH VARIABLE SUBSTRATE-TO-SOURCE ARRANGEMENTS
Systems and methods for providing controllable sub strate-to-source arrangements in a Molecular Beam Epitaxy (MBE) system to selectively adjust a distance, orientation, or other geometric configuration as between the source(s) and substrate(s) used in epitaxial growth systems are described herein. It has been found that by controllably adjusting height, crucible type and angle, and other processing conditions, that extremely high thickness uniformity can be accomplished in epitaxially grown wafers.
High bandwidth time-and-space resolved phase transition microscopy systems configured to detect melt onset in a wafer being processed by laser annealing systems with ultra-short dwell times and spot size.
High bandwidth time-and-space resolved phase transition microscopy systems configured to detect melt onset in a wafer being processed by laser annealing systems with ultra-short dwell times and spot size.
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/263 - Bombardment with wave or particle radiation with high-energy radiation
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/66 - Testing or measuring during manufacture or treatment
70.
Deposition system with integrated carrier cleaning modules
A chemical vapor deposition system for semiconductor wafer production is disclosed. The system includes a process cluster coupled to a first end of a transfer chamber. The process cluster is maintained at a pressure that is lower than atmospheric pressure. The process cluster is also configured to apply epitaxial layers on one or more wafers loaded onto a wafer carrier. The system also includes an automatic factory interface coupled to a second end of the transfer chamber. The automatic factory interface is maintained at atmospheric pressure. The system includes one or more wafer carrier cleaning modules coupled to the automatic factory interface and configured to clean one or more of the wafer carriers without removing the wafer carriers from the chemical vapor deposition system.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/54 - Apparatus specially adapted for continuous coating
Fully automated batch production thin film deposition systems configured to deliver uniformity combined with high throughput at a low cost-per-wafer. In some examples, systems of the present disclosure include automated safe wafer handling via low-impact batch transfer via transportable wafer racks loaded with a plurality of wafers. In some examples, systems include a modular pre- heat & cool-down architecture that enables a flexible thermal management solution tailored around particular specifications.
C23C 16/54 - Apparatus specially adapted for continuous coating
C23C 14/56 - Apparatus specially adapted for continuous coatingArrangements for maintaining the vacuum, e.g. vacuum locks
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
A plurality of endpoints in a wet etching process of a substrate are determined. A plurality of benchmark end points during a wet etching process of a first substrate are determined, using first light information represented by a HSV color model for sample locations of the first substrate. Etch parameters are generated for a wet etching process for a second substrate. The generated etch parameters are used with second light information represented by at least one value of the Hue, Saturation, Value color model associated with a plurality of sample locations of the second substrate to reach respective end points during the wet etching process of a second substrate.
An apparatus for supporting and maneuvering a wafer comprises a handle having a gas inlet adapted to couple to a gas supply, a supporting surface coupled to the handle section including a frame structure having edge segments connecting at vertices and spoke elements extending from a center of the frame structure to the vertices, a gas supply channel coupled to the gas inlet that extends from the handle and branches into channels that run through the spoke elements, and a plurality of nozzles positioned at the vertices on the supporting surface and coupled to the channels in the spoke elements. Gas provided to the plurality of nozzles exits the nozzles in a stream directed parallel to the supporting surface and the stream of gas generates forces that enable wafers to be securely supported in a floating manner over the supporting surface without coming into direct contact with the supporting surface.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B08B 3/02 - Cleaning by the force of jets or sprays
B08B 3/10 - Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
75.
Micro-LED transfer methods using light-based debonding
Transfer methods disclosed herein include transferring micro-LEDs from a first carrier to a second carrier. The methods include bonding the micro-LEDs to the first carrier using a first releasable bonding layer that releases when exposed to actinic light. The micro-LEDs are then secured to a second carrier. The first bonding layer is then irradiated through the first releasable bonding layer through the first carrier with the actinic light to release the micro-LEDs from the first carrier. The second carrier can be a display backplane having bonding pads and the micro-LEDs can be secured to the bonding pads.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
B32B 37/00 - Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
B32B 7/12 - Interconnection of layers using interposed adhesives or interposed materials with bonding properties
76.
Apparatus and method for the minimization of undercut during a UBM etch process
A semiconductor etch process is provided in which an undercut is minimized during an etch process through tight control of etch profile, recognition of etch completion, and minimization of over etch time to increase productivity.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 23/00 - Details of semiconductor or other solid state devices
77.
MICRO-LED TRANSFER METHODS USING LIGHT-BASED DEBONDING
Transfer methods disclosed herein include transferring micro-LEDs from a first carrier to a second carrier. The methods include bonding the micro-LEDs to the first carrier using a first releasable bonding layer that releases when exposed to actinic light. The micro-LEDs are then secured to a second carrier. The first bonding layer is then irradiated through the first releasable bonding layer through the first carrier with the actinic light to release the micro- LEDs from the first carrier. The second carrier can be a display backplane having bonding pads and the micro-LEDs can be secured to the bonding pads. The actinic light can be provided in the form of a scanning actinic light beam. The display backplane can be used to form a micro-LED display. Methods disclosed herein can be used to transfer other devices, such as non-LED light-emitting devices, sensing devices, and microelectromechanical devices, from a first carrier to a second carrier.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
A device for spraying substrates comprises a longitudinal extending fluid dispensing head coupled to a supply of fluid and including a perpendicularly extending flange, a spacer having first and second ends, the first end of the spacer coupled to the extending flange of the dispensing head, a nozzle adapted to eject fluid coupled to the second end of the spacer, and a locking nut enclosing the spacer and securely the dispensing head, spacer and nozzle.
B05B 15/65 - Mounting arrangements for fluid connection of the spraying apparatus or its outlets to flow conduits
B05B 1/00 - Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
B05B 15/656 - Mounting arrangements for fluid connection of the spraying apparatus or its outlets to flow conduits whereby the flow conduit length is changeable
B08B 3/02 - Cleaning by the force of jets or sprays
79.
Chemical vapor deposition wafer carrier with thermal cover
High-efficiency line-forming optical systems and methods that employ a serrated aperture are disclosed. The line-forming optical system includes a laser source, a beam conditioning optical system, a first aperture device, and a relay optical system that includes a second aperture device having the serrated aperture. The serrated aperture is defined by opposing serrated blades configured to reduce intensity variations in a line image formed at an image plane as compared to using an aperture having straight-edged blades.
An injector block for supplying one or more reactant gases into a chemical vapor deposition reactor. The injector block including a plurality of first reactant gas distribution channels between one or more first reactant gas inlets and a plurality of first reactant gas distribution outlets to deliver a first reactant gas into the reactor, and a plurality of second reactant gas distribution channels between one or more second reactant gas inlets and a plurality of second reactant gas distribution outlets to deliver a second reactant gas into the reactor, the plurality of second reactant gas distribution outlets partitioned into at least a second reactant gas first zone and a second reactant gas second zone, the second reactant gas second zone at least partially surrounding the second reactant gas first zone.
C23C 16/54 - Apparatus specially adapted for continuous coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
82.
CHEMICAL VAPOR DEPOSITION APPARATUS WITH MULTI-ZONE INJECTOR BLOCK
An injector block for supplying one or more reactant, gases into a chemical vapor deposition reactor. The injector block including a plurality of first reactant gas distribution channels between one or more first reactant gas inlets and a plurality of first reactant gas distribution outlets to deliver a first reactant gas into the reactor, and a plurality of second reactant gas distribution channels between one or more second reactant gas inlets and a plurality of second reactant gas distribution outlets to deliver a second reactant gas into the reactor, the plurality of second reactant gas distribution outlets partitioned into at least a second reactant gas first zone and a second reactant gas second zone, the second reactant gas second zone at least partially surrounding the second reactant gas first zone.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
83.
Chemical vapor deposition wafer carrier with thermal cover
Wafer processing systems and ring flow extenders used in those systems, the flow extender being proximate and around the peripheral edge of the wafer carrier. The ring flow extender has a top surface facing in the upstream direction, the ring being constructed and arranged so that when the reactor is in an operative condition, the ring closely surrounds the wafer carrier and the top surface of the ring is substantially planar and/or continuous with the top surface of the carrier. The ring flow extender has an outer peripheral surface that includes a radiused portion at or proximate to the top surface of the ring.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
85.
WAFER CARRIER HAVING THERMAL COVER FOR CHEMICAL VAPOR DEPOSITION
A wafer carrier as described and claimed herein includes a thermal cover and a plurality of platforms with corresponding radially inner and outer pedestals.
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A wafer carrier for use in a chemical vapor deposition (CVD) system includes a plurality of wafer retention pockets, each having a peripheral wall surface surrounding a floor surface and defining a periphery of that wafer retention pocket. Each wafer retention pocket has a periphery with a shape defined by at least a first arc having a first radius of curvature situated around a first arc center and a second arc having a second radius of curvature situated around a second arc center. The second arc is different from the first arc, either by its radius of curvature, arc center, or both.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
Methods disclosed herein include scanning a focus spot formed by a laser beam over either a metal layer or IC structures that include a metal and a non-metal. The focus spot is scanned over a scan path that includes scan path segments that partially overlap. The focus spot has an irradiance and a dwell time selected to locally melt the metal layer or locally melt the metal of the IC structures without melting the non-metal. This results in rapid melting and recrystallization of the metal, which decreases the resistivity of the metal and results in improved performance of the IC chips being fabricated. Also disclosed is an example laser melt system for carrying out methods disclosed herein is also disclosed.
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/66 - Testing or measuring during manufacture or treatment
93.
Laser annealing systems and methods with ultra-short dwell times
Laser annealing systems and methods with ultra-short dwell times are disclosed. The method includes locally pre-heating the wafer with a pre-heat line image and then rapidly scanning an annealing image relative to the pre-heat line image to define a scanning overlap region that has a dwell time is in the range from 10 ns to 500 ns. These ultra-short dwell times are useful for performing surface or subsurface melt annealing of product wafers because they prevent the device structures from reflowing.
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
A housing of a wafer processing system includes at least one chamber exhaust outlet and at least one chemical exhaust outlet. The chamber exhaust outlet is formed in the housing for venting gas from the interior of the housing and the chemical exhaust outlet is formed in the housing for venting gas that flows along at least one of: (a) a first flow path defined between the splash shield in a raised position and the collection trays in the lowered position; and (b) a second flow path in which the gas flows through the collection chamber to the chemical exhaust outlet.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B08B 3/02 - Cleaning by the force of jets or sprays
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
B08B 3/14 - Removing waste, e.g. labels, from cleaning liquid
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
95.
Two etch method for achieving a wafer thickness profile
A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a wafer before and after each etching steps in the process. The system also includes a controller to analyze the thickness measurements in view of a target wafer profile and generate an etch recipe, dynamically and in real time, for each etching step. In addition, the process controller can cause a single wafer wet etching station to etch the wafer according to the generated etching recipes. In addition, the system can, based on the pre and post-etch thickness measurements and target etch profile, generate and/or refine the etch recipes.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
96.
Chuck systems and methods having enhanced electrical isolation for substrate-biased ALD
A chuck system for performing a substrate-biased atomic layer deposition process that forms an electrically conductive film on a substrate includes an electrically conductive substrate holder configured to support the substrate and an electrically conductive base that supports the substrate holder. An electrical isolating layer is sandwiched between the substrate holder and the base. The electrical isolating layer has an outer end and an edge recess formed in and that runs around the outer edge. The edge recess is configured to prevent the electrically conductive film from coating the entire interior of the edge recess, thereby maintaining electrical isolation between the substrate holder and the base.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
An apparatus and method for removing post MLO (Material Lift Off) materials from a recycle solvent stream utilize a space efficient design and in a fashion that greatly reduces equipment downtime to maintenance and in a health friendly fashion.
B08B 15/04 - Preventing escape of dirt or fumes from the area where they are producedCollecting or removing dirt or fumes from that area from a small area, e.g. a tool
B01D 29/52 - Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups Filtering elements therefor with multiple filtering elements, characterised by their mutual disposition in parallel connection
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Atomic layer deposition systems comprised of a reaction chamber, a wafer handler, electronic control circuitry and electronic components therefor, all sold as a unit, for use in applying atomic layer coatings on various surfaces
deposition systems for the production of LED lights, advanced LED lights, and photonics applications comprised of wafer handlers, gas delivery equipment, reaction chambers
100.
Scanning methods for focus control for lithographic processing of reconstituted wafers
A method of processing a reconstituted wafer that supports IC chips includes operably disposing the reconstituted wafer in a lithography tool that has a depth of focus and a focus plane and that defines exposure fields on the reconstituted wafer, wherein each exposure field includes at least one of the IC chips. The method also includes scanning the reconstituted wafer with a line scanner to measure a surface topography of the reconstituted wafer as defined by the IC chips. The method also includes, for each exposure field: i) adjusting a position and/or an orientation of the reconstituted wafer so that a photoresist layers of the IC chips within the given exposure field fall within the depth of focus; and ii) performing an exposure with the lithography tool to pattern the photoresist layers of the IC chips in the given exposure field.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
