A chemical vapor deposition system includes a reaction chamber and a removable wafer carrier including a wafer carrier body that is configured to support a wafer. The system includes a removable cover plate that supports the wafer carrier body and a susceptor base is disposed below the cover plate that supports the cover plate. The removable cover plate is in a nested arrangement with respect to the susceptor base as a result of first nesting structure of the removable cover plate mating with a second nesting structure of the susceptor base.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
2.
CHEMICAL VAPOR DEPOSITION SYSTEM WITH HOT-WALL HYBRID FLOW REACTOR AND REMOVABLE REACTOR FLOOR
A chemical vapor deposition system includes a reaction chamber and a removable wafer carrier including a wafer carrier body that is configured to support a wafer. The system includes a removable cover plate that supports the wafer carrier body and a susceptor base is disposed below the cover plate that supports the cover plate. The removable cover plate is in a nested arrangement with respect to the susceptor base as a result of first nesting structure of the removable cover plate mating with a second nesting structure of the susceptor base.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
Machines for surface deposition, namely, chemical vapor
deposition machines, chemical vapor deposition processing
chambers, physical vapor deposition machines, machines for
performing epitaxial growth on semiconductor wafers, epitaxy
reactors; semiconductor processing machines for the
manufacture of substrates, namely, semiconductor substrate
manufacturing machines; semiconductor processing machines
for the manufacture of semiconductor wafers, namely,
semiconductor wafer processing machines; semiconductor wafer
processing equipment; machines for the production of
semiconductors, namely, semiconductor manufacturing
machines; manufacturing process equipment systems, namely
semiconductor fabrication machines, and component parts
thereof.
An in situ cleaning of the vessel of an ion deposition/etching system that includes utilizing the E-mode of the system and increasing plasma potential to remove material deposited on the vessel walls. The method includes operating the system with plasma only, no grid bias, minimal gas flow and high RF power level. During this cleaning mode, radially moving capacitively coupled ions impinge on the vessel inner wall, etching undesired back scattered material from the wall.
in situin situ cleaning of the vessel of an ion deposition/etching system that includes utilizing the E-mode of the system and increasing plasma potential to remove material deposited on the vessel walls. The method includes operating the system with plasma only, no grid bias, minimal gas flow and high RF power level. During this cleaning mode, radially moving capacitively coupled ions impinge on the vessel inner wall, etching undesired back scattered material from the wall.
A method of cleaning wafer carriers includes the steps of: 1) loading a wafer carrier in need of cleaning into a cleaning chamber, injecting one or more cleaning gases into the cleaning chamber; 2) activating the one or more cleaning gases at a temperature ranging from about 400° C. to about 1000° C. under a pressure ranging from about 100 Torr to about 760 Torr; 3) exposing surfaces of the wafer carrier to the activated one or more cleaning gases; and 4) inspecting the wafer carrier surfaces using one or more surface characterization tools to determine if the wafer carrier has been cleaned.
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/54 - Apparatus specially adapted for continuous coating
An ion beam system including an integrated power control system between the power supplies and the grids. The power control system includes a fast, high-power solid state switch such as an insulated gate bipolar transistor (IGBT). The power control system may include a resistor array, e.g., to dissipate current surge. The integrated power control system provides synchronous operation of the grid power supplies.
An ion beam system including an integrated power control system between the power supplies and the grids. The power control system includes a fast, high power solid state switch such as an insulated gate bipolar transistor (IGBT). The power control system may include a resistor array, e.g., to dissipate current surge. The integrated power control system provides synchronous operation of the grid power supplies.
Machines for surface deposition, namely, chemical vapor deposition machines, chemical vapor deposition processing chambers, physical vapor deposition machines, machines for performing epitaxial growth on semiconductor wafers, epitaxy reactors; semiconductor processing machines for the manufacture of substrates, namely, semiconductor substrate manufacturing machines; semiconductor processing machines for the manufacture of semiconductor wafers, namely, semiconductor wafer processing machines; semiconductor wafer processing equipment; machines for the production of semiconductors, namely, semiconductor manufacturing machines; manufacturing process equipment systems, namely semiconductor fabrication machines, and component parts thereof
An in situ cleansing of grids of an ion beam system, such as a deposition and/or etching system, that includes applying a negative bias on the downstream-most grid and etching redeposited material from the grid. Any or all of the chamber pressure of the system, the extraction current in the ion beam source, the beam divergence, and perveance can be adjusted with the deceleration grid bias. The methods of this disclosure can be applied to any gridded ion source systems, including those with an assist ion beam.
in situin situ cleansing of grids of an ion beam system, such as a deposition and/or etching system, that includes applying a negative bias on the downstream-most grid and etching redeposited material from the grid. Any or all of the chamber pressure of the system, the extraction current in the ion beam source, the beam divergence, and perveance can be adjusted with the deceleration grid bias. The methods of this disclosure can be applied to any gridded ion source systems, including those with an assist ion beam.
A multi-wafer metal organic chemical vapor deposition system in which adjacent wafers positioned within the system rotate about their own axes, including a reaction chamber comprising an exhaust system including a peripheral port, a multi-wafer carrier comprising a wafer carrier body and a plurality of wafer carrier discs supported within the wafer carrier body, wherein adjacent wafer carrier discs of the plurality wafer carrier discs are configured and the wafer carrier body are configured to rotate at different speeds, a multi-zone injection block positioned over the wafer carrier body, a central gas port positioned in the center of the wafer carrier body functions as a gas exhaust, and a multi-zone heater assembly positioned beneath the multi-wafer carrier.
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
C23C 14/56 - Apparatus specially adapted for continuous coatingArrangements for maintaining the vacuum, e.g. vacuum locks
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/52 - Controlling or regulating the coating process
13.
MULTI-DISC CHEMICAL VAPOR DEPOSITION SYSTEM WITH CROSS FLOW GAS INJECTION
A multi-wafer metal organic chemical vapor deposition system in which adjacent wafers positioned within the system rotate about their own axes, including a reaction chamber comprising an exhaust system including a peripheral port, a multi-wafer carrier comprising a wafer carrier body and a plurality of wafer carrier discs supported within the wafer carrier body, wherein adjacent wafer carrier discs of the plurality wafer carrier discs are configured and the wafer carrier body are configured to rotate at different speeds, a multi-zone injection block positioned over the wafer carrier body, a central gas port positioned in the center of the wafer carrier body that can be configured as a gas exhaust or a gas injection port, and a multi-zone heater assembly positioned beneath the multi-wafer carrier.
C30B 25/10 - Heating of the reaction chamber or the substrate
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
A multi-wafer metal organic chemical vapor deposition system in which adjacent wafers positioned within the system rotate about their own axes, including a reaction chamber comprising an exhaust system including a peripheral port, a multi-wafer carrier comprising a wafer carrier body and a plurality of wafer carrier discs supported within the wafer carrier body, wherein adjacent wafer carrier discs of the plurality wafer carrier discs are configured and the wafer carrier body are configured to rotate at different speeds, a multi-zone injection block positioned over the wafer carrier body, a central gas port positioned in the center of the wafer carrier body functions as a gas exhaust, and a multi-zone heater assembly positioned beneath the multi-wafer carrier.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
15.
MULTI-DISC CHEMICAL VAPOR DEPOSITION SYSTEM WITH CROSS FLOW GAS INJECTION
A multi-wafer metal organic chemical vapor deposition system in which adjacent wafers positioned within the system rotate about their own axes, including a reaction chamber comprising an exhaust system including a peripheral port, a multi-wafer carrier comprising a wafer carrier body and a plurality of wafer carrier discs supported within the wafer carrier body, wherein adjacent wafer carrier discs of the plurality wafer carrier discs are configured and the wafer carrier body are configured to rotate at different speeds, a multi-zone injection block positioned over the wafer carrier body, a central gas port positioned in the center of the wafer carrier body that can be configured as a gas exhaust or a gas injection port, and a multi-zone heater assembly positioned beneath the multi-wafer carrier.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C30B 25/10 - Heating of the reaction chamber or the substrate
A substrate processing system in accordance with one embodiment includes a processing chamber and an optical pyrometer assembly to measure an emitted thermal radiation originating substantially from a portion of target surfaces. The optical pyrometer includes a lightpipe that comprises a core and a hollow sheath surrounding the core. The core and the sheath are concentric with one another. The sheath is formed by a chemical vapor deposition process and includes local protrusions within a hollow interior thereof to maintain a position of the core within the sheath. In particular, the local protrusions are formed so as to center at least a distal end portion of the core within the sheath. A temperature of the target surface is determined from an intensity of a portion of the emitted thermal radiation near at least one wavelength.
A substrate processing system in accordance with one embodiment includes a processing chamber and an optical pyrometer assembly to measure an emitted thermal radiation originating substantially from a portion of target surfaces. The optical pyrometer includes a lightpipe that comprises a core and a hollow sheath surrounding the core. The core and the sheath are concentric with one another. The sheath is formed by a chemical vapor deposition process and includes local protrusions within a hollow interior thereof to maintain a position of the core within the sheath. In particular, the local protrusions are formed so as to center at least a distal end portion of the core within the sheath. A temperature of the target surface is determined from an intensity of a portion of the emitted thermal radiation near at least one wavelength.
Methods for forming a low resistivity ruthenium (Ru) thin film that include depositing ruthenium onto a substrate via ion beam deposition with assist in a process chamber having reactive and noble gas species therein. The substrate is at at least 250°C. A resulting thin ruthenium film has a thickness of no more than 30 nm, a resistivity less than 12 µΩ-cm and a crystalline structure comprising grains having a (0001) orientation. The resistivity will differ at different thickness; for example, less than 9 µΩ-cm for films of 50 nm and thicker, less than 9.5 µΩ-cm for films of 35 nm and thicker, less than 11 µΩ-cm for films of 20 nm and thicker, less than 15 µΩ-cm for films of 10 nm and thicker or less than 20 µΩ-cm for films of 2 nm and thicker. The grains have a mean grain size at least three times the film thickness.
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
C23C 14/02 - Pretreatment of the material to be coated
Methods for forming a low resistivity ruthenium (Ru) thin film that include depositing ruthenium onto a substrate via ion beam deposition with assist ion beam in a process chamber having reactive and noble gas species therein. The substrate is at at least 250° C. A resulting thin ruthenium film has a thickness of no more than 30 nm, a resistivity less than 12 μ·cm and a crystalline structure comprising grains having a (0001) orientation. The resistivity will differ at different thickness; for example, less than 9 μΩ-cm for films of 50 nm and thicker, less than 9.5 μΩ-cm for films of 35 nm and thicker, less than 11 μΩ-cm for films of 20 nm and thicker, less than 15 μΩ-cm for films of 10 nm and thicker or less than 20 μΩ-cm for films of 2 nm and thicker. The grains have a mean grain size at least three times the film thickness.
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
A wafer carrier includes a base including a generally planar bottom surface and a top surface that includes a plurality of platforms extending above the top surface. The wafer carrier includes a thermal cover defining a plurality of pockets. The thermal cover is configured to be coupled to the base by at least one fastener and the plurality of pockets are arranged such that each pocket of the plurality of pockets is aligned with a corresponding platform of the plurality of the platforms when the thermal cover is supported by a plurality of first pedestals that extend from the top surface of the base. A plurality of second pedestals are located along the plurality of platforms for supporting the one or more wafers, wherein each platform includes at least one second pedestal that extends from a top surface of the platform for supporting one wafer.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
21.
WAFER CARRIER ASSEMBLY WITH IMPROVED TEMPERATURE UNIFORMITY
A wafer carrier includes a base including a generally planar bottom surface and a top surface that includes a plurality of platforms extending above the top surface. The wafer carrier includes a thermal cover defining a plurality of pockets. The thermal cover is configured to be coupled to the base by at least one fastener and the plurality of pockets are arranged such that each pocket of the plurality of pockets is aligned with a corresponding platform of the plurality of the platforms when the thermal cover is supported by a plurality of first pedestals that extend from the top surface of the base. A plurality of second pedestals are located along the plurality of platforms for supporting the one or more wafers, wherein each platform includes at least one second pedestal that extends from a top surface of the platform for supporting one wafer.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented α(110) grains having a resistivity less than 10 μΩ-cm and thickness less than 300 Å, with no discernable β-phase. A resulting thin ruthenium film has a resistivity less than 12 μΩ-cm and a thickness less than 300 Å.
High bandwidth time-and-space resolved scatter phase transition microscopy systems configured to detect melt onset in a wafer being processed by laser annealing systems with ultra-short dwell times and spot size.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
High bandwidth time-and-space resolved scatter phase transition microscopy systems configured to detect melt onset in a wafer being processed by laser annealing systems with ultra-short dwell times and spot size.
G01N 25/02 - Investigating or analysing materials by the use of thermal means by investigating changes of state or changes of phaseInvestigating or analysing materials by the use of thermal means by investigating sintering
G01J 5/00 - Radiation pyrometry, e.g. infrared or optical thermometry
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
25.
Laser Spike Annealing Process Temperature Calibration Utilizing Photoluminescence Measurements
Temperature measurement techniques for device structures formed from detectable bandgap semiconducting materials based on photoluminescence (PL) spectroscopy. Laser annealing temperature calibrations for process temperature control are derived from PL measurements and the derived laser annealing temperature calibrations are implemented in process controllers of laser annealing systems to control an operating parameter of an annealing laser.
A wafer carrier assembly as described herein improves thermal control across a top surface thereof to maintain highly controlled deposition locations and thicknesses.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
27.
WAFER CARRIER ASSEMBLY WITH PEDESTAL AND COVER RESTRAINT ARRANGEMENTS THAT CONTROL THERMAL GAPS
A wafer carrier assembly as described herein improves thermal control across a top surface thereof to maintain highly controlled deposition locations and thicknesses.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
09 - Scientific and electric apparatus and instruments
Goods & Services
Machines and apparatus for manufacturing, namely, physical,
chemical and electro technical equipment and parts
therefore, diamond like carbon systems, ion beam deposition
systems and ion beam sources therefore, ion beam etch
systems, physical vapor deposition systems, lapping/dicing
systems, thermal deposition sources; machines and apparatus
for manufacturing, namely, molecular beam epitaxy (MBE)
systems including components therefore and metal organic
chemical vapor deposition (MOCVD) systems including wafer
carriers and components therefore, and wafer processing
machines including components therefore; laser annealing
systems comprised of lasers for annealing purposes including
components therefore; photolithographic machines for
manufacturing semiconductor wafers and other substrates
including components therefore; semiconductor wafer
processing machines for atomic layer deposition systems
including components therefore; semiconductor wafer
processing equipment; semiconductor single wafer processing
machines using etch chemicals for the semiconductor
industry; semiconductor single wafer wet processing machines
using solvent chemicals; machines containing ion sources and
ion source controllers for vacuum coating processes;
molecular beam epitaxy crucibles and effusion cells for
manufacturing semi-conductors and integrated circuits;
heated high speed rotating disks operated under high vacuum
and exposed to the flow of chemicals in the production of
semiconductors; optical coating ion beam machine for coating
multi-layer optical thin films including components
therefore. Gas sensors and controls for regulating gas concentrations
and/or mass transfer rates in various manufacturing
processes; computer control software for use in ion beam
system applications through touch screen mode.
09 - Scientific and electric apparatus and instruments
Goods & Services
Machines and apparatus for manufacturing, namely, physical,
chemical and electro technical equipment and parts
therefore, diamond like carbon systems, ion beam deposition
systems and ion beam sources therefore, ion beam etch
systems, physical vapor deposition systems, lapping/dicing
systems, thermal deposition sources; machines and apparatus
for manufacturing, namely, molecular beam epitaxy (MBE)
systems including components therefore and metal organic
chemical vapor deposition (MOCVD) systems including wafer
carriers and components therefore, and wafer processing
machines including components therefore; laser annealing
systems comprised of lasers for annealing purposes including
components therefore; photolithographic machines for
manufacturing semiconductor wafers and other substrates
including components therefore; semiconductor wafer
processing machines for atomic layer deposition systems
including components therefore; semiconductor wafer
processing equipment; semiconductor single wafer processing
machines using etch chemicals for the semiconductor
industry; semiconductor single wafer wet processing machines
using solvent chemicals; machines containing ion sources and
ion source controllers for vacuum coating processes;
molecular beam epitaxy crucibles and effusion cells for
manufacturing semi-conductors and integrated circuits;
heated high speed rotating disks operated under high vacuum
and exposed to the flow of chemicals in the production of
semiconductors; optical coating ion beam machine for coating
multi-layer optical thin films including components
therefore. Gas sensors and controls for regulating gas concentrations
and/or mass transfer rates in various manufacturing
processes; computer control software for use in ion beam
system applications through touch screen mode.
09 - Scientific and electric apparatus and instruments
Goods & Services
Manufacturing machines and apparatus, namely, physical,
chemical and electro technical equipment, and parts
therefore, diamond like carbon systems, ion beam deposition
systems and ion beam sources therefore, ion beam etch
systems, physical vapor deposition systems, lapping/dicing
systems, thermal deposition sources; semiconductor
fabrication machines and magnetic storage fabrication
machines including components therefore; manufacturing
machines and apparatus, namely, molecular beam epitaxy (MBE)
systems including components therefore and metal organic
chemical vapor deposition (MOCVD) systems including wafer
carriers and components therefore, wafer processing machines
including components therefore; laser annealing systems
comprised of lasers for annealing purposes including
components therefore; photolithographic machines for
manufacturing semiconductor wafers and other substrates
including components therefore; semiconductor wafer
processing machines for atomic layer deposition systems
including components therefore; semiconductor wafer
processing equipment; semiconductor single wafer processing
machines using etch chemicals for the semiconductor
industry; semiconductor single wafer wet processing machines
using solvent chemicals; machines containing ion sources and
ion source controllers for vacuum coating processes;
molecular beam epitaxy crucibles and effusion cells for
manufacturing semi-conductors and integrated circuits;
heated high speed rotating disks operated under high vacuum
and exposed to the flow of chemicals in the production of
semiconductors; optical coating ion beam machine for coating
multi-layer optical thin films including components
therefore; physical vapor deposition systems, lapping/dicing
systems; semiconductor fabrication machines and magnetic
storage fabrication machines including components therefore;
metal organic chemical vapor deposition (MOCVD) systems,
wafer processing machines including components therefore;
photolithographic machines for manufacturing semiconductor
wafers and other substrates including components therefore;
semiconductor wafer processing machines for atomic layer
deposition systems including components therefore;
semiconductor wafer processing equipment; semiconductor
single wafer processing machines using etch chemicals for
the semiconductor industry; semiconductor single wafer wet
processing machines using solvent chemicals; machines
containing ion sources and ion source controllers for vacuum
coating processes; heated high speed rotating disks operated
under high vacuum and exposed to the flow of chemicals in
the production of semiconductors; optical coating ion beam
machine for coating multi-layer optical thin films including
components therefore. Scientific machines and apparatus, namely, physical,
chemical and electro technical equipment, and parts
therefore, diamond like carbon systems, ion beam deposition
systems and ion beam sources therefore, ion beam etch
systems, thermal deposition sources; scientific machines and
apparatus, namely, molecular beam epitaxy (MBE) systems
including components therefore and including wafer carriers
and components therefore; laser annealing systems comprised
of lasers for annealing purposes including components
therefore; gas sensors and controls for regulating gas
concentrations and/or mass transfer rates in various
manufacturing processes; molecular beam epitaxy crucibles
and effusion cells for manufacturing semi-conductors and
integrated circuits; computer control software for use in
ion beam system applications through touch screen mode; gas
sensors and controls for regulating gas concentrations
and/or mass transfer rates in various manufacturing
processes; computer control software for use in ion beam
system applications through touch screen mode.
31.
Rotating Disk Reactor with Split Substrate Carrier
A self-centering split substrate carrier that supports a semiconductor substrate in a CVD system includes a first section configured to be centrally located in the split substrate carrier having a top surface with a recessed area for receiving a substrate for CVD processing and comprising a plurality of apertures positioned in an outer surface. A second section formed in a ring-shape having an inner surface configured to receive the first section and an outer surface configured to interface with an edge drive rotation mechanism that rotates the substrate carrier. The inner surface comprising a plurality of boss structures, wherein a respective one of the plurality of boss structures on the inner surface of the second section is configured to fit into a respective one of the plurality of apertures positioned in the outer surface of the first section, so as to improve alignment of the first and the second section of the self-centering split substrate carrier.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
32.
Automated Batch Production Thin Film Deposition Systems and Methods of Using the Same
Fully automated batch production thin film deposition systems configured to deliver uniformity combined with high throughput at a low cost-per-wafer. In some examples, systems of the present disclosure include automated safe wafer handling via low-impact batch transfer via transportable wafer racks loaded with a plurality of wafers. In some examples, systems include a modular pre-heat & cool-down architecture that enables a flexible thermal management solution tailored around particular specifications.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
C23C 16/52 - Controlling or regulating the coating process
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
33.
Reactor with Centering Pin for Epitaxial Deposition
A substrate reactor with centering pin for epitaxial deposition includes a vacuum chamber and a tube configured to rotate in the vacuum chamber around a tube geometrical center axis. A substrate carrier forming a pocket dimensioned for holding a substrate on a top surface includes an aperture that is centrally located on a bottom surface. The substrate carrier is positioned on and in contact with a top surface of the tube. A centering pin is positioned along a geometrical center axis of rotation of the substrate carrier. The centering pin has a first end positioned in the aperture on the bottom surface of the substrate carrier and a second end fixed inside the reactor so that the substrate carrier rotates around the geometrical center axis of the substrate carrier independent of the geometrical center axis of the tube.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented α(110) grains having a resistivity less than 9 μΩ-cm and thickness less than 300 Å, with no discernable β-phase. A resulting thin ruthenium film has a resistivity less than 10 μΩ-cm and a thickness less than 300 Å.
09 - Scientific and electric apparatus and instruments
Goods & Services
Manufacturing machines and apparatus, namely, semiconductor fabrication machines and magnetic storage fabrication machines; manufacturing machines and apparatus, namely, manufacturing machines and apparatus, namely, molecular beam epitaxy (MBE) systems including components therefore and metal organic chemical vapor deposition (MOCVD) systems including wafer carriers and components therefore, wafer processing machines; photolithographic machines and parts therefore for manufacturing semiconductor wafers and semiconductor substrates; semiconductor wafer processing machines for atomic layer deposition systems; semiconductor wafer processing equipment; semiconductor single wafer processing machines using etch chemicals for the semiconductor industry; semiconductor single wafer wet processing machines using solvent chemicals; machines for semiconductor manufacturing containing ion sources and ion source controllers for vacuum coating processes; molecular beam epitaxy crucibles and effusion cells sold as an integral component of machines for manufacturing semi-conductors and integrated circuits; heated high speed rotating disks operated under high vacuum and exposed to the flow of chemicals in the production of semiconductors sold as an integral component of machines for manufacturing semi-conductors; optical coating ion beam machine for coating multi-layer optical thin films sold as an integral component of machines for manufacturing semi-conductors laser annealing systems comprised of lasers for industrial use for annealing purposes; gas sensors and control valves for regulating gas concentrations and mass transfer rates in various manufacturing processes; downloadable computer control software for use in ion beam system applications through touch screen mode for user control in Ion Beam Deposition (IBD), Ion Beam Etch (IBE) and Sputtering systems
09 - Scientific and electric apparatus and instruments
Goods & Services
Manufacturing machines and apparatus, namely, semiconductor fabrication machines and magnetic storage fabrication machines; manufacturing machines and apparatus, namely, molecular beam epitaxy (MBE) systems including components therefore and metal organic chemical vapor deposition (MOCVD) systems including wafer carriers and components therefore, wafer processing machines; photolithographic machines and parts therefore for manufacturing semiconductor wafers and semiconductor substrates; semiconductor wafer processing machines for atomic layer deposition systems; semiconductor wafer processing equipment; semiconductor single wafer processing machines using etch chemicals for the semiconductor industry; semiconductor single wafer wet processing machines using solvent chemicals; machines for semiconductor manufacturing containing ion sources and ion source controllers for vacuum coating processes; molecular beam epitaxy crucibles and effusion cells sold as an integral component of machines for manufacturing semi-conductors and integrated circuits; heated high speed rotating disks operated under high vacuum and exposed to the flow of chemicals in the production of semiconductors sold as an integral component of machines for manufacturing semi-conductors; optical coating ion beam machine for coating multi-layer optical thin films sold as an integral component of machines for manufacturing semi-conductors laser annealing systems comprised of lasers for industrial use for annealing purposes; gas sensors and control valves for regulating gas concentrations and mass transfer rates in various manufacturing processes; downloadable computer control software for use in ion beam system applications through touch screen mode for user control in Ion Beam Deposition (IBD), Ion Beam Etch (IBE) and Sputtering systems
09 - Scientific and electric apparatus and instruments
Goods & Services
Manufacturing machines and apparatus, namely, semiconductor fabrication machines and magnetic storage fabrication machines; manufacturing machines and apparatus, namely, molecular beam epitaxy (MBE) systems including components therefore and metal organic chemical vapor deposition (MOCVD) systems including wafer carriers and components therefore, wafer processing machines; photolithographic machines and parts therefore for manufacturing semiconductor wafers and semiconductor substrates; semiconductor wafer processing machines for atomic layer deposition systems; semiconductor wafer processing equipment; semiconductor single wafer processing machines using etch chemicals for the semiconductor industry; semiconductor single wafer wet processing machines using solvent chemicals; machines for semiconductor manufacturing containing ion sources and ion source controllers for vacuum coating processes; molecular beam epitaxy crucibles and effusion cells sold as an integral component of machines for manufacturing semi-conductors and integrated circuits; heated high speed rotating disks operated under high vacuum and exposed to the flow of chemicals in the production of semiconductors sold as an integral component of machines for manufacturing semi-conductors; optical coating ion beam machine for coating multi-layer optical thin films sold as an integral component of machines for manufacturing semi-conductors laser annealing systems comprised of lasers for industrial use for annealing purposes; gas sensors and control valves for regulating gas concentrations and mass transfer rates in various manufacturing processes; downloadable computer control software for use in ion beam system applications through touch screen mode for user control in Ion Beam Deposition (IBD), Ion Beam Etch (IBE) and Sputtering systems
Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250°C to produce the metal film. A resulting thin tungsten film has large and highly oriented a(110) grains having a resistivity less than 10 µΩ-cm and thickness less than 300 Å, with no discernable b-phase. A resulting thin ruthenium film has a resistivity less than 12 µΩ-cm and a thickness less than 300 Å.
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
A system for removing flux from openings formed in a substrate that has openings (e.g., sized 20 microns or less) formed therein includes a spay nozzle device that has a spray nozzle arm that is formed at an angle of about 45 degrees or less for discharging fluid towards the openings in the substrate for flux removal. The angle is between about 30 degrees and 45 degrees.
A system for removing flux from openings formed in a substrate that has openings (e.g., sized 20 microns or less) formed therein includes a spay nozzle device that has a spray nozzle arm that is formed at an angle of about 45 degrees or less for discharging fluid towards the openings in the substrate for flux removal. The angle is between about 30 degrees and 45 degrees.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B23K 1/20 - Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
B08B 3/04 - Cleaning involving contact with liquid
B08B 3/02 - Cleaning by the force of jets or sprays
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B08B 5/02 - Cleaning by the force of jets, e.g. blowing-out cavities
41.
Enhanced cathodic ARC source for ARC plasma deposition
An improved cathodic arc source and method of DLC film deposition with a carbon containing directional-jet plasma flow produced inside of cylindrical graphite cavity with depth of the cavity approximately equal to the cathode diameter. The generated carbon plasma expands through the orifice into ambient vacuum resulting in plasma flow strong self-constriction. The method represents a repetitive process that includes two steps: the described above plasma generation/deposition step that alternates with a recovery step. This step provides periodical removal of excessive amount of carbon accumulated on the cavity wall by motion of the cathode rod inside of the cavity in direction of the orifice. The cathode rod protrudes above the orifice, and moves back to the initial cathode tip position. The said steps periodically can be reproduced until the film with target thickness is deposited. Technical advantages include the film hardness, density, and transparency improvement, high reproducibility, long duration operation, and particulate reduction.
A plurality of endpoints in a wet etching process of a substrate are determined. A plurality of benchmark end points during a wet etching process of a first substrate are determined, using first light information represented by a HSV color model for sample locations of the first substrate. Etch parameters are generated for a wet etching process for a second substrate. The generated etch parameters are used with second light information represented by at least one value of the Hue, Saturation, Value color model associated with a plurality of sample locations of the second substrate to reach respective end points during the wet etching process of a second substrate.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
44.
MOLECULAR BEAM EPITAXY SYSTEMS WITH VARIABLE SUBSTRATE-TO-SOURCE ARRANGEMENTS
Systems and methods for providing controllable sub strate-to-source arrangements in a Molecular Beam Epitaxy (MBE) system to selectively adjust a distance, orientation, or other geometric configuration as between the source(s) and substrate(s) used in epitaxial growth systems are described herein. It has been found that by controllably adjusting height, crucible type and angle, and other processing conditions, that extremely high thickness uniformity can be accomplished in epitaxially grown wafers.
High bandwidth time-and-space resolved phase transition microscopy systems configured to detect melt onset in a wafer being processed by laser annealing systems with ultra-short dwell times and spot size.
High bandwidth time-and-space resolved phase transition microscopy systems configured to detect melt onset in a wafer being processed by laser annealing systems with ultra-short dwell times and spot size.
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/263 - Bombardment with wave or particle radiation with high-energy radiation
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/66 - Testing or measuring during manufacture or treatment
49.
Deposition system with integrated carrier cleaning modules
A chemical vapor deposition system for semiconductor wafer production is disclosed. The system includes a process cluster coupled to a first end of a transfer chamber. The process cluster is maintained at a pressure that is lower than atmospheric pressure. The process cluster is also configured to apply epitaxial layers on one or more wafers loaded onto a wafer carrier. The system also includes an automatic factory interface coupled to a second end of the transfer chamber. The automatic factory interface is maintained at atmospheric pressure. The system includes one or more wafer carrier cleaning modules coupled to the automatic factory interface and configured to clean one or more of the wafer carriers without removing the wafer carriers from the chemical vapor deposition system.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/54 - Apparatus specially adapted for continuous coating
Fully automated batch production thin film deposition systems configured to deliver uniformity combined with high throughput at a low cost-per-wafer. In some examples, systems of the present disclosure include automated safe wafer handling via low-impact batch transfer via transportable wafer racks loaded with a plurality of wafers. In some examples, systems include a modular pre- heat & cool-down architecture that enables a flexible thermal management solution tailored around particular specifications.
C23C 16/54 - Apparatus specially adapted for continuous coating
C23C 14/56 - Apparatus specially adapted for continuous coatingArrangements for maintaining the vacuum, e.g. vacuum locks
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
A plurality of endpoints in a wet etching process of a substrate are determined. A plurality of benchmark end points during a wet etching process of a first substrate are determined, using first light information represented by a HSV color model for sample locations of the first substrate. Etch parameters are generated for a wet etching process for a second substrate. The generated etch parameters are used with second light information represented by at least one value of the Hue, Saturation, Value color model associated with a plurality of sample locations of the second substrate to reach respective end points during the wet etching process of a second substrate.
An apparatus for supporting and maneuvering a wafer comprises a handle having a gas inlet adapted to couple to a gas supply, a supporting surface coupled to the handle section including a frame structure having edge segments connecting at vertices and spoke elements extending from a center of the frame structure to the vertices, a gas supply channel coupled to the gas inlet that extends from the handle and branches into channels that run through the spoke elements, and a plurality of nozzles positioned at the vertices on the supporting surface and coupled to the channels in the spoke elements. Gas provided to the plurality of nozzles exits the nozzles in a stream directed parallel to the supporting surface and the stream of gas generates forces that enable wafers to be securely supported in a floating manner over the supporting surface without coming into direct contact with the supporting surface.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B08B 3/02 - Cleaning by the force of jets or sprays
B08B 3/10 - Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
54.
Micro-LED transfer methods using light-based debonding
Transfer methods disclosed herein include transferring micro-LEDs from a first carrier to a second carrier. The methods include bonding the micro-LEDs to the first carrier using a first releasable bonding layer that releases when exposed to actinic light. The micro-LEDs are then secured to a second carrier. The first bonding layer is then irradiated through the first releasable bonding layer through the first carrier with the actinic light to release the micro-LEDs from the first carrier. The second carrier can be a display backplane having bonding pads and the micro-LEDs can be secured to the bonding pads.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
B32B 37/00 - Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
B32B 7/12 - Interconnection of layers using interposed adhesives or interposed materials with bonding properties
55.
Apparatus and method for the minimization of undercut during a UBM etch process
A semiconductor etch process is provided in which an undercut is minimized during an etch process through tight control of etch profile, recognition of etch completion, and minimization of over etch time to increase productivity.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 23/00 - Details of semiconductor or other solid state devices
56.
MICRO-LED TRANSFER METHODS USING LIGHT-BASED DEBONDING
Transfer methods disclosed herein include transferring micro-LEDs from a first carrier to a second carrier. The methods include bonding the micro-LEDs to the first carrier using a first releasable bonding layer that releases when exposed to actinic light. The micro-LEDs are then secured to a second carrier. The first bonding layer is then irradiated through the first releasable bonding layer through the first carrier with the actinic light to release the micro- LEDs from the first carrier. The second carrier can be a display backplane having bonding pads and the micro-LEDs can be secured to the bonding pads. The actinic light can be provided in the form of a scanning actinic light beam. The display backplane can be used to form a micro-LED display. Methods disclosed herein can be used to transfer other devices, such as non-LED light-emitting devices, sensing devices, and microelectromechanical devices, from a first carrier to a second carrier.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
A device for spraying substrates comprises a longitudinal extending fluid dispensing head coupled to a supply of fluid and including a perpendicularly extending flange, a spacer having first and second ends, the first end of the spacer coupled to the extending flange of the dispensing head, a nozzle adapted to eject fluid coupled to the second end of the spacer, and a locking nut enclosing the spacer and securely the dispensing head, spacer and nozzle.
B05B 15/65 - Mounting arrangements for fluid connection of the spraying apparatus or its outlets to flow conduits
B05B 1/00 - Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
B05B 15/656 - Mounting arrangements for fluid connection of the spraying apparatus or its outlets to flow conduits whereby the flow conduit length is changeable
B08B 3/02 - Cleaning by the force of jets or sprays
58.
Chemical vapor deposition wafer carrier with thermal cover
High-efficiency line-forming optical systems and methods that employ a serrated aperture are disclosed. The line-forming optical system includes a laser source, a beam conditioning optical system, a first aperture device, and a relay optical system that includes a second aperture device having the serrated aperture. The serrated aperture is defined by opposing serrated blades configured to reduce intensity variations in a line image formed at an image plane as compared to using an aperture having straight-edged blades.
An injector block for supplying one or more reactant gases into a chemical vapor deposition reactor. The injector block including a plurality of first reactant gas distribution channels between one or more first reactant gas inlets and a plurality of first reactant gas distribution outlets to deliver a first reactant gas into the reactor, and a plurality of second reactant gas distribution channels between one or more second reactant gas inlets and a plurality of second reactant gas distribution outlets to deliver a second reactant gas into the reactor, the plurality of second reactant gas distribution outlets partitioned into at least a second reactant gas first zone and a second reactant gas second zone, the second reactant gas second zone at least partially surrounding the second reactant gas first zone.
C23C 16/54 - Apparatus specially adapted for continuous coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
61.
CHEMICAL VAPOR DEPOSITION APPARATUS WITH MULTI-ZONE INJECTOR BLOCK
An injector block for supplying one or more reactant, gases into a chemical vapor deposition reactor. The injector block including a plurality of first reactant gas distribution channels between one or more first reactant gas inlets and a plurality of first reactant gas distribution outlets to deliver a first reactant gas into the reactor, and a plurality of second reactant gas distribution channels between one or more second reactant gas inlets and a plurality of second reactant gas distribution outlets to deliver a second reactant gas into the reactor, the plurality of second reactant gas distribution outlets partitioned into at least a second reactant gas first zone and a second reactant gas second zone, the second reactant gas second zone at least partially surrounding the second reactant gas first zone.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
62.
Chemical vapor deposition wafer carrier with thermal cover
Wafer processing systems and ring flow extenders used in those systems, the flow extender being proximate and around the peripheral edge of the wafer carrier. The ring flow extender has a top surface facing in the upstream direction, the ring being constructed and arranged so that when the reactor is in an operative condition, the ring closely surrounds the wafer carrier and the top surface of the ring is substantially planar and/or continuous with the top surface of the carrier. The ring flow extender has an outer peripheral surface that includes a radiused portion at or proximate to the top surface of the ring.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
64.
WAFER CARRIER HAVING THERMAL COVER FOR CHEMICAL VAPOR DEPOSITION
A wafer carrier as described and claimed herein includes a thermal cover and a plurality of platforms with corresponding radially inner and outer pedestals.
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A wafer carrier for use in a chemical vapor deposition (CVD) system includes a plurality of wafer retention pockets, each having a peripheral wall surface surrounding a floor surface and defining a periphery of that wafer retention pocket. Each wafer retention pocket has a periphery with a shape defined by at least a first arc having a first radius of curvature situated around a first arc center and a second arc having a second radius of curvature situated around a second arc center. The second arc is different from the first arc, either by its radius of curvature, arc center, or both.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
Methods disclosed herein include scanning a focus spot formed by a laser beam over either a metal layer or IC structures that include a metal and a non-metal. The focus spot is scanned over a scan path that includes scan path segments that partially overlap. The focus spot has an irradiance and a dwell time selected to locally melt the metal layer or locally melt the metal of the IC structures without melting the non-metal. This results in rapid melting and recrystallization of the metal, which decreases the resistivity of the metal and results in improved performance of the IC chips being fabricated. Also disclosed is an example laser melt system for carrying out methods disclosed herein is also disclosed.
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/66 - Testing or measuring during manufacture or treatment
72.
Laser annealing systems and methods with ultra-short dwell times
Laser annealing systems and methods with ultra-short dwell times are disclosed. The method includes locally pre-heating the wafer with a pre-heat line image and then rapidly scanning an annealing image relative to the pre-heat line image to define a scanning overlap region that has a dwell time is in the range from 10 ns to 500 ns. These ultra-short dwell times are useful for performing surface or subsurface melt annealing of product wafers because they prevent the device structures from reflowing.
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
A housing of a wafer processing system includes at least one chamber exhaust outlet and at least one chemical exhaust outlet. The chamber exhaust outlet is formed in the housing for venting gas from the interior of the housing and the chemical exhaust outlet is formed in the housing for venting gas that flows along at least one of: (a) a first flow path defined between the splash shield in a raised position and the collection trays in the lowered position; and (b) a second flow path in which the gas flows through the collection chamber to the chemical exhaust outlet.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B08B 3/02 - Cleaning by the force of jets or sprays
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
B08B 3/14 - Removing waste, e.g. labels, from cleaning liquid
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
74.
Two etch method for achieving a wafer thickness profile
A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a wafer before and after each etching steps in the process. The system also includes a controller to analyze the thickness measurements in view of a target wafer profile and generate an etch recipe, dynamically and in real time, for each etching step. In addition, the process controller can cause a single wafer wet etching station to etch the wafer according to the generated etching recipes. In addition, the system can, based on the pre and post-etch thickness measurements and target etch profile, generate and/or refine the etch recipes.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
75.
Chuck systems and methods having enhanced electrical isolation for substrate-biased ALD
A chuck system for performing a substrate-biased atomic layer deposition process that forms an electrically conductive film on a substrate includes an electrically conductive substrate holder configured to support the substrate and an electrically conductive base that supports the substrate holder. An electrical isolating layer is sandwiched between the substrate holder and the base. The electrical isolating layer has an outer end and an edge recess formed in and that runs around the outer edge. The edge recess is configured to prevent the electrically conductive film from coating the entire interior of the edge recess, thereby maintaining electrical isolation between the substrate holder and the base.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
An apparatus and method for removing post MLO (Material Lift Off) materials from a recycle solvent stream utilize a space efficient design and in a fashion that greatly reduces equipment downtime to maintenance and in a health friendly fashion.
B08B 15/04 - Preventing escape of dirt or fumes from the area where they are producedCollecting or removing dirt or fumes from that area from a small area, e.g. a tool
B01D 29/52 - Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups Filtering elements therefor with multiple filtering elements, characterised by their mutual disposition in parallel connection
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Atomic layer deposition systems comprised of a reaction chamber, a wafer handler, electronic control circuitry and electronic components therefor, all sold as a unit, for use in applying atomic layer coatings on various surfaces
deposition systems for the production of LED lights, advanced LED lights, and photonics applications comprised of wafer handlers, gas delivery equipment, reaction chambers
79.
Scanning methods for focus control for lithographic processing of reconstituted wafers
A method of processing a reconstituted wafer that supports IC chips includes operably disposing the reconstituted wafer in a lithography tool that has a depth of focus and a focus plane and that defines exposure fields on the reconstituted wafer, wherein each exposure field includes at least one of the IC chips. The method also includes scanning the reconstituted wafer with a line scanner to measure a surface topography of the reconstituted wafer as defined by the IC chips. The method also includes, for each exposure field: i) adjusting a position and/or an orientation of the reconstituted wafer so that a photoresist layers of the IC chips within the given exposure field fall within the depth of focus; and ii) performing an exposure with the lithography tool to pattern the photoresist layers of the IC chips in the given exposure field.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
Systems and methods are described herein for improving the overall thickness control and the radial thickness profile of epitaxially-grown films or layers on wafers. Continuous, in situ measurement of thickness at a radially inner region and a radially outer region are used in embodiments to control corresponding precursor and/or dilution gas flow rates. Such measurements can be made using white light reflectometry through a viewport in the reactor housing.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
The wafer chuck apparatus has a chuck body that includes an interior and a top surface. A plurality of micro-channel regions is formed in the top surface. Each micro-channel region is defined by an array of micro-channel sections that are in pneumatic communication with each other. The micro-channel regions are pneumatically isolated from each other. One or more vacuum manifold regions are defined in the interior of the chuck body and are in pneumatic communication with corresponding micro-channel regions through respective vacuum holes. The configuration of the micro-channel regions makes the wafer chuck apparatus particularly useful in chucking wafers that have a substantial amount of warp.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
B23B 31/30 - Chucks characterised by features relating primarily to remote control of the gripping means using fluid-pressure means in the chuck
A seal having a cross-sectional profile that includes a first lobe, a second lobe, and a corner having an angle between 45 and 90 degrees, inclusive, a first side extending from the first lobe to the corner and a second side extending from the second lobe to the corner, where the first side and the second side define the corner angle. The seal can be seated in a groove so that the first lobe and the corner are in the groove and the second lobe extends from the groove. In use, the second lobe folds into the groove to form a fluid-tight seal.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
84.
Self-centering wafer carrier for chemical vapor deposition
A two-level tape frame rinse assembly is configured for grasping the substrate so as to create a gap between the substrate and a backside support plate that allows the backside of the wafer to be rinsed and spun dry after rinsing.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
Pattern-multiplication via a multiple step ion beam etching process utilizing multiple etching steps. The ion beam is stationary, unidirectional or non-rotational in relation to the surface being etched during the etching steps, but sequential etching steps can utilize an opposite etching direction. Masking elements are used to create additional masking elements, resulting in decreased spacing between adjacent structures and increased structure density.
Embodiments relate to a grid short clearing system is provided for gridded ion beam sources used in industrial applications for materials processing systems that reduces grid damage during operation. In various embodiments, the ion source is coupled to a process chamber and a grid short clearing system includes methods for supplying a gas to the process chamber and setting the gas pressure to a predetermined gas pressure in the range between 50 to 750 Torr, applying an electrical potential difference between each adjacent pair of grids using a current-limited power supply, and detecting whether or not the grid shorts are cleared. The electrical potential difference between the grids is at least 10% lower than the DC electrical breakdown voltage between the grids with no contaminants.
H01J 37/36 - Gas-filled discharge tubes for cleaning surfaces while plating with ions of materials introduced into the discharge, e.g. introduced by evaporation
H01J 37/30 - Electron-beam or ion-beam tubes for localised treatment of objects
G01R 19/165 - Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
Embodiments relate to a grid short clearing system is provided for gridded ion beam sources used in industrial applications for materials processing systems that reduces grid damage during operation. In various embodiments, the ion source is coupled to a process chamber and a grid short clearing system includes methods for supplying a gas to the process chamber and setting the gas pressure to a predetermined gas pressure in the range between 50 to 750 Torr, applying an electrical potential difference between each adjacent pair of grids using a current-limited power supply, and detecting whether or not the grid shorts are cleared. The electrical potential difference between the grids is at least 10% lower than the DC electrical breakdown voltage between the grids with no contaminants.
H01J 37/30 - Electron-beam or ion-beam tubes for localised treatment of objects
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
91.
Collection chamber apparatus to separate multiple fluids during the semiconductor wafer processing cycle
The wafer processing system includes a rotatable wafer support member for supporting a wafer and a plurality of collections trays disposed about a peripheral edge of the wafer support member. The collection trays are arranged in a stacked configuration, each collection tray having an inner wall portion and an outer wall portion that converge to define a trough section for collecting fluid. The system includes a chamber exhaust outlet that is formed in the housing for venting gas from the interior of the housing outside of the collection trays and a chemical exhaust outlet that is formed in the housing for venting gas that flows through the collection chamber to the chemical exhaust outlet. The chemical exhaust outlet is fluidly isolated from the chamber exhaust outlet.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B01D 46/00 - Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
B08B 3/14 - Removing waste, e.g. labels, from cleaning liquid
B08B 15/02 - Preventing escape of dirt or fumes from the area where they are producedCollecting or removing dirt or fumes from that area using chambers or hoods covering the area
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
92.
Apparatus and method to control etch rate through adaptive spiking of chemistry
An apparatus and method are provided to: determine a unique profile to etch each wafer, execute that etch, and determine and deliver the proper chemical addition in order to maintain etch rate within tight tolerances.
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
G06F 17/11 - Complex mathematical operations for solving equations
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
H01L 21/66 - Testing or measuring during manufacture or treatment
A chemical vapor deposition or atomic layer deposition system includes a gas concentration sensor for determining the quantity of precursor gases admitted thereto. The gas concentration sensor can include a transmitter and a receiver for transmitting an acoustic signal across a chamber. In embodiments, the transmitter and receiver are designed to increase transmitted signal while reducing transmitted noise, facilitating use of the gas concentration sensor at low pressure and high temperature.
A wafer handling assembly comprising a center hub supporting a vertical non-contact lifting head and at least one radially extending and radially retracting wafer engaging mechanism having a surface to engage a wager at a peripheral edge of the wafer, where the peripheral edge is a corner edge or a side edge. In some implementations, the wafer engaging mechanism has a foot on which the wafer edge is supported. The lifting head may be vertically moveable in respect to the assembly.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
95.
Periphery purge shutter and flow control systems and methods
An arrangement of two shutters radially outward from an injector block and a susceptor onto which a wafer carrier is removably mounted are configured to provide a flowpath through a reactor chamber that does not exhibit a vortex, thereby reducing or eliminating buildup on the inside of the reactor chamber and facilitating large temperature gradient between the injector block and the wafer carrier. This can be accomplished by introduction of a purge gas flow at a radially inner wall of an upper shutter, and in some embodiments the purge gas can have a different chemical composition than the precursor gas used to grow desired epitaxial structures on the wafer carrier.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
Methods for stress control in thin silicon (Si) wafer-based semiconductor materials. By a specific interrelation of process parameters (e.g., temperature, reactant supply, time), a highly uniform nucleation layer is formed on the Si substrate that mitigates and/or better controls the stress (tensile and compressive) in subsequent layers formed on the thin Si substrate.
This disclosure provides various methods for improved etching of spin-transfer torque random access memory (STT-RAM) structures. In one example, the method includes (1) ion beam etch of the stack just past the MTJ at near normal incidence, (2) a short clean-up etch at a larger angle in a windowed mode to remove any redeposited material along the sidewall that extends from just below the MTJ to just above the MTJ, (3) deposition of an encapsulant with controlled step coverage to revert to a vertical or slightly re-entrant profile from the tapered profile generated by the etch steps, (4) ion beam etch of the remainder of the stack at near normal incidence while preserving the encapsulation along the sidewall of the MTJ, (5) clean-up etch at a larger angle and windowed mode to remove redeposited materials from the sidewalls, and (6) encapsulation of the etched stack.
H01L 43/00 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H01L 43/02 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details
This disclosure provides various methods for improved etching of spin-transfer torque random access memory (STT-RAM) structures. In one example, the method includes (1) ion beam etch of the stack just past the MTJ at near normal incidence, (2) a short clean-up etch at a larger angle in a windowed mode to remove any redeposited material along the sidewall that extends from just below the MTJ to just above the MTJ, (3) deposition of an encapsulant with controlled step coverage to revert to a vertical or slightly re-entrant profile from the tapered profile generated by the etch steps, (4) ion beam etch of the reainder of the stack at near normal incidence while preserving the encapsulation along the sidewall of the MTJ, (5) clean-up etch at a larger angle and windowed mode to remove redeposited materials from the sidewalls, and (6) encapsulation of the etched stack.
H01L 43/02 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details
