The present disclosure relates to a photodetection device capable of achieving both a shielding effect and heat resistance on a second-layer pixel substrate and suppressing parasitic light reception sensitivity on the second-layer pixel substrate.
The present disclosure relates to a photodetection device capable of achieving both a shielding effect and heat resistance on a second-layer pixel substrate and suppressing parasitic light reception sensitivity on the second-layer pixel substrate.
A photodetection device includes: a first substrate including a first semiconductor substrate on which at least a photoelectric conversion unit is formed; a second substrate including a second semiconductor substrate on which an active element is formed; and a dielectric multilayer film configured by alternately stacking at least three or more layers of a first film using a dielectric material having a first refractive index and a second film using a dielectric material having a second refractive index lower than the first refractive index, the dielectric multilayer film being disposed between the first semiconductor substrate and the second semiconductor substrate. The present disclosure can be applied to, for example, a solid-state imaging device or the like including a pixel that receives incident light and performs photoelectric conversion.
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
In-vehicle monitoring is disclosed. In one example, an in-vehicle monitoring apparatus includes an imaging section provided in a side mirror housing. A control section is configured to control the imaging direction of the imaging section in accordance with a state of the side mirror housing, and sets an imaging operation of the imaging section to a first power consumption mode in accordance with an ignition turn-off determination of the vehicle. The imaging section operates such that, when a motion of a surrounding object has been detected based on first image data generated in the first power consumption mode, the imaging operation is to be set to a second power consumption mode that is higher than the first power consumption mode.
H04N 23/65 - Control of camera operation in relation to power supply
B60R 1/12 - Mirror assemblies combined with other articles, e.g. clocks
B60R 1/25 - Real-time viewing arrangements for drivers or passengers using optical image capturing systems, e.g. cameras or video systems specially adapted for use in or on vehicles for viewing an area outside the vehicle, e.g. the exterior of the vehicle with a predetermined field of view to the sides of the vehicle
H04N 23/667 - Camera operation mode switching, e.g. between still and video, sport and normal or high and low resolution modes
H04N 23/695 - Control of camera direction for changing a field of view, e.g. pan, tilt or based on tracking of objects
3.
SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE
[Problem] To improve Qe. [Solution] A solid-state imaging device is provided with a plurality of pixels. Each of the pixels is provided with an on-chip lens, a photoelectric conversion unit, a pixel circuit, and a filter. The on-chip lens concentrates incident light. The photoelectric conversion unit photoelectrically converts the incident light concentrated by the on-chip lens to output a signal. The pixel circuit processes the signal output from the photoelectric conversion unit. The filter has characteristics in transmission performance in relation to the incident angle of the incident light. The photoelectric conversion unit of each of the plurality of pixels photoelectrically converts light incident through the filter.
An optical device includes a first light source (10), a multilayer structure (101), a waveguide disposed in the multilayer structure (101) and configured to receive light from the first light source (10), and a first antenna structure (30) comprising a first antenna (32) disposed in the multilayer structure (101) and optically coupled to the waveguide (15), and a lens structure (35) on the multilayer structure (101) and comprising a lens (36) overlapped with the first antenna (32) in a plan view. In a cross-sectional view, a center line of the first antenna (32) passes through the lens (36), and the lens (36) has at least one focal point that is offset from the center line of the first antenna structure (32) in a lateral direction.
G02B 6/12 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/42 - Coupling light guides with opto-electronic elements
A61B 90/00 - Instruments, implements or accessories specially adapted for surgery or diagnosis and not covered by any of the groups , e.g. for luxation treatment or for protecting wound edges
G02B 6/293 - Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
G02B 6/35 - Optical coupling means having switching means
This display device comprises: a valid pixel region in which a plurality of pixels that output display light are disposed; and an invalid pixel region which is disposed adjacent to the outer periphery of the valid pixel region and in which a plurality of pixels that do not output the display light are disposed. The invalid pixel region includes a monitor region, each of the plurality of pixels in the valid pixel region includes a lens, at least some pixels among a plurality of pixels in the monitor region each include a lens, and when seen in plan view, the lens pattern of the monitor region is different from the lens pattern of the valid pixel region.
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
The present invention improves the precision of edge detection in an image sensor for detecting the presence or absence of an edge in each pixel pair. This image sensor comprises: a vertical scanning circuit; and an edge detection circuit. In the image sensor, the vertical scanning circuit outputs pixel signals by sequentially driving first and second pixel pairs, and third and fourth pixel pairs that have an inter-pixel distance different from that of the first and second pixel pairs. The edge detection circuit detects the presence or absence of an edge on the basis of pixel signals of the first, second, third, and fourth pixel pairs.
H04N 25/11 - Arrangement of colour filter arrays [CFA]Filter mosaics
H04N 25/40 - Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
[Problem] To provide a display device capable of achieving both high definition and long life of luminance. [Solution] A display device according to an embodiment of the present disclosure comprises: a light-emitting element the luminance of which changes according to a current; and a first transistor for supplying a current to the light-emitting element. The first transistor includes a semiconductor layer, a first terminal formed on the surface of the semiconductor layer, a second terminal formed on the surface of the semiconductor layer and electrically connected to the light-emitting element, and a gate electrode provided between the first terminal and the second terminal via a gate insulating film. A first channel width on the first terminal side is different from a second channel width on the second terminal side.
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
A photodetection element (10) of one embodiment of the present disclosure is provided with: a first electrode (11); a second electrode (14) disposed facing the first electrode (11); a photoelectric conversion layer (13) disposed between the first electrode (11) and the second electrode (14); and a buffer layer (12) disposed between the photoelectric conversion layer (13) and the first electrode (11) and containing a plurality of nanoparticles (120) on the surfaces of which a plurality of organic ligands are modified.
H10K 30/60 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
H01L 31/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
H10K 30/84 - Layers having high charge carrier mobility
Provided is a sensing device for detecting the presence of an edge, the sensing device having improved edge detection accuracy. The sensing device comprises a gain control circuit, an offset control circuit, and a comparator. The gain control circuit performs, as gain control, a control to increase or reduce at least one of a pair of pixel signals using a prescribed gain. The offset control circuit performs, as offset control, a control for superimposing a prescribed offset on at least one of the pair of pixel signals. The comparator compares the pair of pixel signals subjected to the gain control and the offset control, and outputs a comparison result.
A solid-state imaging device includes a transfer transistor and an element separation section. The transfer transistor includes a vertical gate electrode. At least a portion of the element separation section is disposed apart from the vertical gate electrode with a semiconductor layer interposed in between. The semiconductor layer has a high concentration of impurities of a first electrical conduction type. The element separation section includes an oxide film insulator.
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
H04N 25/63 - Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
H04N 25/771 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
11.
INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND VEHICLE CONTROL SYSTEM
An information processing device according to the present disclosure includes a calculation unit and an estimation unit. The calculation unit calculates three-dimensional information of a driver on the basis of information from an imaging unit mounted on a vehicle. The estimation unit estimates an optimal driving posture of the driver on the basis of the three-dimensional information.
B60R 16/037 - Electric or fluid circuits specially adapted for vehicles and not otherwise provided forArrangement of elements of electric or fluid circuits specially adapted for vehicles and not otherwise provided for electric for occupant comfort
B60W 10/30 - Conjoint control of vehicle sub-units of different type or different function including control of auxiliary equipment, e.g. air-conditioning compressors or oil pumps
B60W 40/08 - Estimation or calculation of driving parameters for road vehicle drive control systems not related to the control of a particular sub-unit related to drivers or passengers
B60W 60/00 - Drive control systems specially adapted for autonomous road vehicles
G06T 7/73 - Determining position or orientation of objects or cameras using feature-based methods
12.
PHOTODETECTION DEVICE, SYSTEM, AND INFORMATION PROCESSING DEVICE
An object is to realize highly accurate and high-speed three-dimensional shape measurement. A photodetection device includes a light receiving sensor, a processing circuit, and a register. The light receiving sensor acquires pattern information projected onto a subject. The processing circuit acquires depth information on the basis of the pattern information, sets a point group density for each region in the depth information, sets a point group on the basis of the point group density, and outputs information regarding the point group. The register stores a parameter for processing in the processing circuit and a control signal of the processing circuit.
G01B 11/25 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. moiré fringes, on the object
To provide a surface emitting element having a current injection structure capable of suppressing vignetting and absorption of light. A surface emitting element according to the present technology includes: a multilayer structure including a first semiconductor structure and a second semiconductor structure stacked with each other, and a light emitting layer disposed between the first semiconductor structure and the second semiconductor structure and having a light emitting region, in which in the second semiconductor structure, at least a surface layer on a side opposite to the light emitting layer side has a first region corresponding to the light emitting region and a second region that is a surrounding region of the first region and has lower resistance than the first region. According to the surface emitting element according to the present technology, it is possible to provide a surface emitting element having a current injection structure capable of suppressing vignetting and absorption of light.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H10H 20/813 - Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
14.
LIGHT EMITTING DEVICE, ELECTRONIC APPARATUS, AND SEALING DEVICE
Light emitting devices with moisture entry prevention are disclosed. In one example, a light emitting device includes light emitting elements provided in a display region, a Si-containing layer covering the light emitting elements, a metal oxide layer provided on the Si-containing layer, and a seal portion that is provided outside the display region and contains an organic resin. The Si-containing layer has an exposed portion that is exposed outside the display region without being covered with the metal oxide layer, and the seal portion is in contact with the exposed portion.
An imaging element is miniaturized. The imaging element includes pixels, well region electrodes, and signal generation sections. A pixel includes: a photoelectric conversion section that performs photoelectric conversion of incident light, the photoelectric conversion section formed in a semiconductor substrate; a charge holding section that holds a charge generated by the photoelectric conversion; and a charge transfer section that transfers the charge to the charge holding section. A well region electrode is disposed by being embedded in the semiconductor substrate and connected to a well region of the semiconductor substrate. A signal generation section generates a pixel signal that is a signal corresponding to the charge held in the charge holding section.
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
16.
DISTANCE MEASURING DEVICE, DISTANCE MEASURING SYSTEM, AND DISTANCE MEASURING METHOD
The present disclosure provides a light receiving device, a control method, and a distance measuring system capable of suppressing an increase in size of a device that generates a distance measurement value on the basis of a phase difference.
The present disclosure provides a light receiving device, a control method, and a distance measuring system capable of suppressing an increase in size of a device that generates a distance measurement value on the basis of a phase difference.
According to the present disclosure, provided is a distance measuring device including: a distance measuring sensor that receives reflected light that is pattern light emitted from a light source device, reflected by an object, and returned; a first distance generation unit that generates a first distance measurement value that is a distance to the object on the basis of a position of the pattern light received by the distance measuring sensor; a phase generation unit that generates, as a phase difference, a time from when the pattern light is emitted to when the pattern light is received as the reflected light; and a second distance generation unit that generates a second distance measurement value that is a distance to the object, according to: the phase difference; and a repetition period of the phase difference based on the first distance measurement value.
An information processing device includes a first reception unit that receives first data generated by a first sensor in synchronization with a first reference signal and second data generated by a second sensor, and a transmission unit that transmits the first data and at least part of the second data as third data synchronized with a second reference signal.
H04N 23/45 - Cameras or camera modules comprising electronic image sensorsControl thereof for generating image signals from two or more image sensors being of different type or operating in different modes, e.g. with a CMOS sensor for moving images in combination with a charge-coupled device [CCD] for still images
H04N 23/68 - Control of cameras or camera modules for stable pick-up of the scene, e.g. compensating for camera body vibrations
H04N 23/81 - Camera processing pipelinesComponents thereof for suppressing or minimising disturbance in the image signal generation
H04N 25/47 - Image sensors with pixel address outputEvent-driven image sensorsSelection of pixels to be read out based on image data
Leakage of irradiation light to the light receiving side is to be reduced in a ranging module that uses the time of flight (ToF) method. A first pixel region in which a plurality of first pixels that receive reflected light of irradiation light from a light source is provided, and a second pixel region in which a second pixel is provided between the first pixel region and the light source are formed on the light receiving surface of a sensor chip. A light blocking wall is disposed between the first pixel region and the second pixel region. The sensor chip is connected to a support substrate, and openings that guide the reflected light to the first pixel region and the second pixel region are formed in the support substrate.
To improve image quality in an image sensor that simultaneously performs exposure in all pixels. A conversion efficiency control transistor opens and closes a path between a floating diffusion (FD) and an additional capacitor. A discharge transistor discharges a charge from a photoelectric conversion element. A reset transistor is interposed between a power supply voltage and the discharge transistor. A transfer transistor transfers a charge from the photoelectric conversion element to the FD. An FD link gate transistor opens and closes a path between a connection point of the additional capacitor and the conversion efficiency control transistor and a connection point of the reset transistor and the discharge transistor. A plurality of capacitive elements holds a level corresponding to the voltage of the FD.
H04N 25/532 - Control of the integration time by controlling global shutters in CMOS SSIS
H04N 25/59 - Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
H04N 25/616 - Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
H04N 25/77 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 25/771 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
H04N 25/78 - Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
H04N 25/621 - Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
The present invention makes it possible to mount a chip on a package while reducing stress borne by the chip. The package comprises: a chip; a substrate on which the chip is mounted; a lid which is positioned above the chip so as to be separated from the chip; and a sealing material which is positioned on the substrate so as to be separated from the chip and which supports the lid. The lid may be a transparent member. The package may further comprise a rib which supports the lid. The rib and the sealing material may be separated from each other. The lid may be disposed inward of the sealing material.
Provided is a semiconductor device. The semiconductor device according to an embodiment of the present disclosure includes a semiconductor layer, a wiring layer, a light-emitting element, and a first light guide member. The wiring layer is provided on a side of a first surface of the semiconductor layer. The light-emitting element is provided on a side of a second surface of the semiconductor layer. The second surface is on an opposite side to the first surface. The first light guide member into which light from the light-emitting element enters is provided on the side of the first surface of the semiconductor layer.
Provided is a technology that enables efficient arrangement of antennas while avoiding physical interference. The present technology provides a radar device comprising a transmission antenna array including two or more transmission antennas. The transmission antenna array has a first transmission sub-array and a second transmission sub-array, each including one or more transmission antennas. An arrangement region of the first transmission sub-array and an arrangement region of the second transmission sub-array partially or entirely overlap. Each of the first transmission sub-array and the second transmission sub-array transmits a signal by a division method.
This solid-state imaging element comprises a photoelectric conversion layer and a plurality of on-chip lenses. The photoelectric conversion layer has a plurality of photoelectric conversion parts. The plurality of on-chip lenses are positioned, side by side in a matrix, closer to the light-incident side than the photoelectric conversion layer. In addition, a first boundary part located between diagonally adjacent on-chip lenses is spaced further apart from a first surface, located on the light-incident side of the photoelectric conversion layer, than a second boundary part located between on-chip lenses adjacent to each other in the row direction or column direction.
According to the present invention, the circuit scale of an image sensor that compares voltages is reduced. A comparator compares the voltages of each of a pair of vertical signal lines and outputs a comparison result. A holding unit holds the comparison result and outputs the comparison result as a pre-gain control comparison result. A control unit controls a charge-voltage conversion efficiency of a pixel connected to one of the pair of vertical signal lines to a value different from that of a pixel connected to the other of the pair of vertical signal lines, on the basis of the pre-gain control comparison result. An edge determining circuit determines the presence or absence of an edge on the basis of the pre-gain control comparison result and a post-gain control comparison result, which is the comparison result obtained when the charge-voltage conversion efficiency is controlled.
H04N 25/703 - SSIS architectures incorporating pixels for producing signals other than image signals
H04N 25/76 - Addressed sensors, e.g. MOS or CMOS sensors
H04N 25/771 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
[Object]
[Object]
To increase ranging accuracy.
[Object]
To increase ranging accuracy.
[Solving Means]
[Object]
To increase ranging accuracy.
[Solving Means]
Provided is a ranging device (1) including a light emitting element array (102), a light receiving element array (126), a control circuit (120), a histogram generation circuit (128), a processing circuit (130), and storage circuits (122, 140). The light emitting element array (102) includes light emitting elements that project light to a subject and are disposed in a one-dimensional or two-dimensional array form. The light receiving element array (126) includes light receiving elements that receive reflected light from the subject and are disposed in a one-dimensional or two-dimensional array form. The control circuit (120) controls a light emitting timing of the light emitting element and an exposure timing of the light receiving element. The histogram generation circuit (128) generates a histogram relating to information concerning light reception by the light receiving element. The processing circuit (130) measures a distance to the subject in reference to the histogram. The storage circuits (122, 140) store calibration information. The histogram generation circuit (128) generates, in reference to the calibration information, the histogram obtained by calibrating the information concerning light reception, for each light receiving element of the light receiving element array (126).
The present disclosure relates to a solid-state imaging element and an electronic apparatus capable of improving pixel characteristics. A photoelectric conversion portion is provided for each pixel in a semiconductor substrate, a filter that transmits light of a color received by the pixel is arranged for each pixel in a color filter layer, and a microlens is arranged for each pixel pair including two pixels of a same color in an on-chip lens layer. Then, a first element isolation portion formed through the semiconductor substrate and provided at least partially between pixels of different colors, and a second element isolation portion formed by digging from a light receiving surface of the semiconductor substrate to a predetermined depth and provided at least between photoelectric conversion portions of the two pixels forming the pixel pair are provided on the semiconductor substrate. The present technology can be applied to, for example, a back-illuminated CMOS image sensor.
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
27.
PHOTODETECTION ELEMENT AND METHOD OF MANUFACTURING PHOTODETECTION ELEMENT
The restriction of the arrangement position of a through electrode connected to an external terminal of a packaged photodetection element is alleviated.
The restriction of the arrangement position of a through electrode connected to an external terminal of a packaged photodetection element is alleviated.
A photodetection element includes: a first chip on which a first wiring layer is formed; a second chip that is laminated on the first chip and on which a second wiring layer is formed; a third chip that is arranged side by side with the second chip at an interval and laminated on the first chip, a third wiring layer being formed on the third chip; an embedding layer that is laminated on the first chip so that the second chip and the third chip are embedded in the embedding layer; and a through electrode that is located between the second chip and the third chip, penetrates the embedding layer, and is connected to the first wiring layer. The first wiring layer may be directly bonded to the second wiring layer and the third wiring layer.
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
A light detection device according to an embodiment of the present disclosure comprises: a pixel array which has a plurality of pixels each including a light-receiving element capable of detecting light pulses, in which two or more of the plurality of pixels can be joined together as a light-receiving pixel, and which is capable of generating a detection signal according to light pulse detection timings; a light reception control circuit capable of controlling the operation of the pixel array to switch some of the two or more pixels constituting a light-receiving pixel; and a depth map generation circuit which is capable of generating a first depth map on the basis of a plurality of detection signals generated by a plurality of light-receiving pixels in a case where two or more pixels are first two or more pixels, is capable of generating a second depth map on the basis of a plurality of detection signals in a case where two or more pixels are second two or more pixels, and is capable of generating a composite depth map by performing image compositing processing on the basis of the first depth map and the second depth map.
In this system for processing an image, a light source distribution is estimated in real time. This image sensor comprises pixels, an analog-to-digital converter, and an interface. The pixels generate analog signals as pixel signals. The analog-to-digital converter performs processing to determine whether the levels of the pixel signals are higher than a prescribed threshold value and generate flag information indicating the determination result, and processing to convert the pixel signals into digital signals and output the result as luminance information. The interface externally outputs the luminance information and the flag information.
This semiconductor device includes an electromagnetic shield and an inductor. The electromagnetic shield has a first slit extending in a first direction and a second slit extending in a second direction different from the first direction and intersecting the first slit, and extends along a first surface including the first direction and the second direction. The inductor faces the electromagnetic shield in a third direction intersecting the first surface.
The present invention makes it possible to mount a chip on a package while reducing stress on the chip. This package comprises: a chip; an inner lead having a tip end joined to the surface of the chip; an outer lead connected to the inner lead; a support part supporting the inner lead and the outer lead around the chip; and a lid disposed over the support part and spaced apart from the chip. The chip may be supported inside the support part on the basis of the tension applied to the inner leads. The tip end of the inner lead may be bonded to the surface of the chip by solder bonding.
H01L 23/04 - ContainersSeals characterised by the shape
H01L 23/10 - ContainersSeals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
This disclosure relates to a data processing device, a data processing method, and an event data output sensor capable of facilitating processing on a reception side. This data processing device comprises: a data generation unit that generates data in which the timing of output is irregular and the data length for each prescribed data unit is not constant; and a packet generation processing unit that generates a packet in which data is stored in one or more data units. The packet generation processing unit generates a packet with a packet structure in which one of a plurality of types of headers provided when data is stored in a packet is always arranged at the head of the payload of each packet. The present technology can be applied, for example, to an EVS that generates event data.
A bus system according to the present disclosure comprises: a first controller that has controller authority during an initial state; and one or more second controllers that are connected to the first controller via a bus. When having handed over the controller authority to a specific second controller from among the one or more second controllers, the first controller transmits an interrupt signal to the bus, and determines, on the basis of a response to the interrupt signal, whether the second controller having the controller authority is present on the bus.
A system detects a traveling obstacle region that is a region that obstructs traveling of a work machine. The system includes a region angle detector, a region height detector, an angle obstacle region detector, a height obstacle region detector, and a traveling obstacle region detector. The region angle detector detects an angle of a traveling surface based on a distance image around the work machine. The region height detector detects height of the traveling surface based on the distance image. The angle obstacle region detector detects an angle obstacle region that is an obstacle region based on the detected angle. The height obstacle region detector detects a height obstacle region that is an obstacle region based on the detected height. The traveling obstacle region detector detects a traveling obstacle region based on the detected angle obstacle region and the detected height obstacle region.
A solid-state imaging device includes: a first electrode, supplied with a fixed voltage, partially surrounding a periphery of a first pixel; a charge transfer layer, transferring electric charge, disposed at least in a region opposed to the first electrode and corresponding to the first pixel; a photoelectric conversion layer, converting light into electric charge, disposed on the charge transfer layer oppositely to the first electrode; an electrode disposed on the photoelectric conversion layer oppositely to the charge transfer layer and supplying a voltage thereto; first and second accumulation electrodes each accumulating electric charge in the charge transfer layer and disposed to be spaced apart on the charge transfer layer oppositely to the photoelectric conversion layer in a region corresponding to the first pixel; and a first control electrode disposed between the first and second accumulation electrodes and transferring one of electric charge accumulated by the first and second accumulation electrodes.
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
The restriction of a lead-out position of a wire from a chip is relaxed. A package includes a first chip, a second chip, and an extended rewiring layer. A first wiring layer is formed on a front surface of the first chip. The second chip has a front surface on which a second wiring layer is formed, and is shorter in length at least in a lateral direction than the first chip. The extended rewiring layer is extended in the lateral direction from the second chip and is electrically connected to the first wiring layer and the second wiring layer. A size of the extended rewiring layer may be equal to a size of the front surface of the first chip. The extended rewiring layer may be directly bonded to the first wiring layer.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
37.
ILLUMINATION DEVICE, DISTANCE MEASURING DEVICE, AND IN-VEHICLE DEVICE
For example, an illumination device is downsized.
For example, an illumination device is downsized.
An illumination device includes: a plurality of light emitting sections arranged in an array and emitting light beams substantially parallel to each other; a condensing section that condenses a light beam emitted from each light emitting section; and a conversion section that makes light beams diverging after light is condensed substantially parallel to each other and changes emission directions of the light beams.
The present invention makes it possible to reduce the planar size of a filter circuit provided with inductors and capacitors. The filter circuit includes a first inductor, a second inductor disposed adjacent to the first inductor, and a first capacitor in which opposing electrodes are each shared with a pattern of an adjacent portion between first and second inductors. The opposing electrodes of the first capacitor may be disposed in the same layer. The opposing electrodes of the first capacitor may be disposed in mutually different layers. The capacitance value of the first capacitor may be set to a value at which common mode noise is attenuated.
[Problem] To provide a solid-state imaging device and an imaging device with which, when performing a global shutter by an FD accumulation method, it is possible to suppress a decrease in conversion efficiency from accumulated charges to a voltage and reduce kTC noise. [Solution] A solid-state imaging device according to the present disclosure includes a pixel array unit. Each pixel includes: a photoelectric conversion unit that stores charge; a discharge transistor that resets the charge before the photoelectric conversion; a transfer transistor that transfers the charge stored in the photoelectric conversion unit; and a first floating diffusion that stores the transferred charge. The plurality of pixels share a second floating diffusion that stores the charge transferred from the first floating diffusion, a first reset transistor that resets the charge stored in the first and second floating diffusions, a first capacitor that is an additional capacitor that reduces the kTC noise, and a second reset transistor that connects the second floating diffusion and the first capacitor.
H04N 25/65 - Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
H04N 25/77 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
40.
DISTANCE MEASURING DEVICE AND DISTANCE MEASURING METHOD
A distance measuring device according to an embodiment comprises: a determining unit that determines a first minimum value from a first integrated histogram; and a processing unit that integrates the first integrated histogram and a first histogram and subtracts the first minimum value to generate a second integrated histogram.
The present disclosure pertains to a communication method and a communication device that enable resolving a discrepancy between a transmission buffer and a reception buffer. A communication device according to the present disclosure transmits/receives a packet to/from a communication partner device by means of an A-PHY. When an ACK signal is received from the communication partner device and a packet of an MC number indicated by the ACK signal is not present in the transmission buffer, the communication device transmits, to the communication partner device, an ACK request signal for requesting an ACK signal that indicates the latest MC number present in the reception buffer of the communication partner device. The present disclosure can be applied to, for example, a communication system to which an in-vehicle camera is connected.
A photodetection device is provided capable of increasing an amount of charge that can be accumulated in a photoelectric conversion portion. The semiconductor device includes: a semiconductor substrate; the photoelectric conversion portion that is formed on the semiconductor substrate and generates and accumulates a charge according to an amount of received light; a charge holding portion that holds the charge generated by the photoelectric conversion portion; and a transfer gate that transfers the charge accumulated by the photoelectric conversion portion to the charge holding portion. Then, the photoelectric conversion portion has a configuration including a p-type semiconductor region containing an impurity of p-type and formed continuously in a thickness direction of the semiconductor substrate, and an n-type semiconductor region containing an impurity of n-type and formed in a region in contact with the p-type semiconductor region and formed continuously in the thickness direction of the semiconductor substrate. Here, the n-type semiconductor region has a constant impurity concentration of the impurity of n-type in the thickness direction of the semiconductor substrate. Furthermore, the transfer gate has a configuration including a vertical gate electrode extending from a front surface of the semiconductor substrate to a depth deeper than that of an end portion of the n-type semiconductor region located on a back surface side of the semiconductor substrate.
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
A gray code is controlled suitably for a range.
A gray code is controlled suitably for a range.
A distance measuring device includes one or a plurality of light emitting elements, a plurality of light receiving elements, a first counter, an encoder, a decoder, a second counter, and a distance extraction circuit. The plurality of light receiving elements receives light from the one or the plurality of light emitting elements reflected on a target. The first counter is a binary code of n digits from a first value to a second value of 2n−1−(the first value), and performs, at every predetermined time, state transition of a first binary code in which a value next to the second value is set as the first value. The encoder converts the first binary code into a gray code of n digits. The decoder acquires the second binary code of n digits from the gray code based on a light reception timing of the light receiving elements. The second counter counts the number of times of light reception in the plurality of light receiving elements corresponding to each of the second binary codes. The distance extraction circuit measures a distance to the target on the basis of a discrete value acquired by the second counter.
ESD surge protection that does not depend on pixel circuits is disclosed. In one example, a light receiving device includes an effective pixel including a light receiving element that detects presence or absence of photons and a readout circuit that processes a signal output from the light receiving element. A first terminal applies a predetermined voltage to the light receiving element, a second terminal applies a first power supply voltage to the readout circuit, and a protection circuit protects a light receiving element and a circuit element of the readout circuit from overvoltage. The protection circuit includes a light receiving element of a dummy pixel connected to the first terminal, and a diode element connected to the light receiving element of the dummy pixel in a polarity relationship in a reverse direction between the light receiving element of the dummy pixel and the second terminal.
An information processing device according to an aspect of the present disclosure includes: a sensor that acquires image generation data; and a conversion circuit that converts the image generation data based on a predetermined interface or data format acquired by the sensor into image generation data based on another interface or data format compatible with a processor.
An information processing device according to the present technology includes a movement track estimation section that estimates a movement track of an edge position of a target object in reference to position information associated with an event-caused pixel detected by an event sensor in a previous period before a reference time point in a state where a positional relation between the event sensor and the target object changes such that the target object is displaced within a sensing range of the event sensor, and an edge position estimation section that estimates an edge position of the target object at the reference time point, as a reference time edge position, in reference to the movement track of the edge position estimated by the movement track estimation section.
[Object] To provide a solid-state imaging element and an imaging device that can enlarge the dynamic range and convert even a small amount of photoelectrically-converted electric charges into an image signal. [Solving Means] According to the present disclosure, provided is a solid-state imaging element including a photoelectric conversion unit that generates electric charges according to an amount of received light, a first electric charge holding unit that is connected to the photoelectric conversion unit via a first node, a comparator that outputs a first signal when a potential of the first node and a predetermined potential coincide with each other, a reset unit that sets the first node to a reset potential according to the first signal, and a counting unit that counts and outputs the first signal, and in a first mode, the reset potential applied to the first node changes in time series.
H04N 25/571 - Control of the dynamic range involving a non-linear response
H04N 25/616 - Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
H04N 25/78 - Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
A semiconductor device includes an island-shaped semiconductor including a first portion and a second portion that is provided integrally alongside the first portion in a first direction and has a width in a direction identical to a width of the first portion along a second direction intersecting the first direction larger than the width of the first portion, the first portion and the second portion each including an upper surface and a side surface, an insulating layer that surrounds each of the first portion and the second portion, a field effect transistor including a gate electrode that is separated from the second portion and is provided across the upper surface and the side surface of the first portion with a gate insulating film interposed therebetween, and a dielectric portion that is provided between the gate electrode and the second portion and is lower in relative permittivity than the insulating layer.
H10D 62/10 - Shapes, relative sizes or dispositions of the regions of the semiconductor bodiesShapes of the semiconductor bodies
H10D 64/68 - Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
To improve optical characteristics and suppress dark current.
To improve optical characteristics and suppress dark current.
An imaging device includes: a plurality of pixels; and a pixel boundary region disposed between two of the pixels adjacent to each other, in which each of the pixels includes: a photoelectric conversion layer containing a compound semiconductor material; a first electrode that is disposed on a light incident surface side of the photoelectric conversion layer and contains a compound semiconductor material; and a second electrode that is disposed on an opposite surface side with respect to the light incident surface side of the photoelectric conversion layer and transfers a charge photoelectrically converted in the photoelectric conversion layer, the pixel boundary region includes: a high-concentration impurity region extending from the light incident surface side to the opposite surface side; a third electrode electrically insulated from the high-concentration impurity region and disposed along the high-concentration impurity region; and a fourth electrode electrically conducted to the first electrode.
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
A display device includes a plurality of first electrodes each provided for each pixel, an insulating layer containing a silicon compound, provided between the first electrodes, and covering a peripheral edge portion of the first electrode, a first interface layer containing a first silicon oxide and provided at an interface between the first electrode and the insulating layer, an organic layer including a light emitting layer, and provided on the first electrodes and the insulating layer, commonly to all of pixels, and a second electrode provided on the organic layer. The insulating layer contains a second silicon oxide on a surface portion on a side of the organic layer.
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
H10K 59/121 - Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
The present invention makes it possible to obtain low noise and low distortion in both of transistors to which a push-pull operation using a balun is applied. This amplification device comprises: a first field effect transistor in which an input voltage is applied to the gate; a second field effect transistor connected in series to the first field effect transistor; a first inductor connected to the gate of the second field effect transistor; a second inductor connected in series to the source of the first field effect transistor and step-down inductively coupled to the first inductor; and a third inductor connected in series to the source of the second field effect transistor and step-down inductively coupled to the first inductor.
H03F 1/26 - Modifications of amplifiers to reduce influence of noise generated by amplifying elements
H03F 1/22 - Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
[Problem] To provide an optical measurement device capable of improving deterioration of measurement accuracy caused by mode hop. [Solution] An optical measurement device according to an embodiment of the present disclosure comprises: a wavelength sweeping light source that emits light of a wavelength corresponding to a supply current; at least one delay interferometer that has a plurality of light-guiding waveguides that have different lengths; and an analyzer that, based on a phase difference between a plurality of beat signals obtained by photoelectrically converting the output light of the delay interferometer guided to the plurality of waveguides, identifies a mode hop interval where a mode hop in which the wavelength changes discontinuously is generated.
G01S 17/34 - Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated using transmission of continuous, frequency-modulated waves while heterodyning the received signal, or a signal derived therefrom, with a locally-generated signal related to the contemporaneously transmitted signal
G01C 3/06 - Use of electric means to obtain final indication
G01S 7/481 - Constructional features, e.g. arrangements of optical elements
A light-emitting device according to one embodiment of the present disclosure comprises: a first light-emitting unit that includes a first active layer which emits light beams in a first wavelength band and light beams in a second wavelength band, such light beams being mutually different due to current-density changes; and a second light-emitting unit that is laminated on the first light-emitting unit and includes a second active layer which emits light beams in a third wavelength band different from the light beams in the first wavelength band and the light beams in the second wavelength band.
H10H 20/813 - Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
H10H 20/824 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
H10H 20/825 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
H10H 20/855 - Optical field-shaping means, e.g. lenses
A light detection device according to an embodiment of the present disclosure comprises: a pixel having a first light-receiving element capable of receiving light and outputting a current, a first transistor, and a first generator circuit electrically connected to the first light-receiving element via the first transistor and capable of generating a signal based on the current from the first light-receiving element; and a cell having a second transistor capable of outputting a first voltage, a third transistor, and a second generator circuit electrically connected to the second transistor via the third transistor and capable of generating a first signal based on the first voltage.
According to the embodiments, a storage device comprises a magnetoresistive element that has a variable resistance value and an application unit that applies voltage or current to the magnetoresistive element, applying, as the voltage, a first voltage and then a second voltage that is greater than the first voltage or, as the current, a first current and then a second current that is greater than the first current.
G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
56.
SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
[Problem] To capture an image while having a cooling element capable of coping with fluctuations in temperature. [Solution] This solid-state imaging device comprises a light receiving element, a logic circuit, and a Peltier element. The light receiving elements are provided in a two-dimensional array in a pixel array. The logic circuit processes a signal output from the light receiving element. The Peltier element controls temperature on the basis of a signal having a temperature characteristic output from the light receiving element.
[Problem] To make it possible to take appropriate measures depending on the location of a defect. [Solution] This light detecting device comprises: a pixel array unit that includes a plurality of pixels arranged in a first direction and a second direction that intersect one another; a photoelectric conversion element that generates an electric charge corresponding to an amount of incident light; a plurality of first wirings that are connected to a plurality of first pixel groups which include two or more pixels arranged in the first direction and which are arranged in the second direction; a drive circuit that sequentially drives the plurality of first wirings; a plurality of second wirings that transmit a plurality of pixel signals output from a plurality of second pixel groups arranged in the first direction; a readout circuit that reads out the plurality of pixel signals transmitted by the plurality of second wirings; and a control circuit that, if at least one of the plurality of first wirings, the drive circuit, the plurality of second wirings, or the readout circuit includes a defect, thins out the plurality of first wirings or the plurality of second wirings or lowers the frame rate at which image data for one frame are output from the pixel array unit.
[Problem] To make it possible to take appropriate measures according to where defects occur. [Solution] A semiconductor device according to the present invention comprises a first substrate, a plurality of second substrates that are discretely arranged on the first substrate, and a comparator that compares output signals from two or more of the second substrates. Each of the second substrates has a test signal generation circuit that generates a test signal and a signal selection circuit that selects one of the test signal and a signal that has been outputted from the first substrate. The comparator compares the output signals from the two or more of the second substrates when the signal selection circuit of each of the two or more second substrates has selected the test signal.
Provided is a concept for program code generation. A large language model (LLM) is prompted to generate a plurality of alternative versions of program code based on input specification data. Execution of the plurality of alternative versions of the program code is simulated. The LLM is then adjusted based on one or more preferred simulated executions of the plurality of alternative versions of the program code.
The memory capacity for storing address information etc. of an I2C communication instrument, as well as the number of encoders and decoders can be reduced.
The memory capacity for storing address information etc. of an I2C communication instrument, as well as the number of encoders and decoders can be reduced.
A communication device to establish communication between a first I2C communication instrument and a second I2C communication instrument connected to a communication partner device, includes: an encoder that generates Header Packet Data including a target ID of the communication partner device and I2C Packet Data including a slave address and an offset address of the second I2C communication instrument; a communication unit that transmits a transmission packet including the Header Packet Data and the I2C Packet Data generated by the encoder to the communication partner device by a TDD communication scheme and receives a reception packet from the communication partner device by the TDD communication scheme; and a decoder that generates the I2C Packet Data from the reception packet.
Luminance information and luminance change information are obtained at the same timing with high resolution. In one example, a solid-state imaging device includes pixels and a control circuit. Each of the pixels includes a photoelectric conversion element that generates an electrical signal based upon incident light, a first pixel circuit that converts the electrical signal into first information, and a second pixel circuit that converts the electrical signal into second information. The control circuit controls each of the pixels such that the photoelectric conversion element is connected to either the first pixel circuit or the second pixel circuit.
There is provided a light detecting device including: a pixel comprising a light receiving element; and a pixel circuit comprising a counter circuit and a control circuit. The light receiving element is configured to receive light. The counter circuit is configured to receive a first signal based on an output of the light receiving element. The counter circuit is configured to output a second signal based on a difference between a number of first signals in a first period and a number of first signals in a second period. The control circuit is configured to control the counter circuit.
H04N 25/47 - Image sensors with pixel address outputEvent-driven image sensorsSelection of pixels to be read out based on image data
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
The present disclosure relates to an information processing device and method that can suppress an increase in data size of a feature map. A difference between a feature map that is a processing result of a computational layer subject to processing of a neural network and an asymptotic value of an activation function of the computational layer subject to processing is derived, and the difference is encoded by a quantization-based method where a midpoint of a quantization step size is not set as a quantization level for zero input. Furthermore, the encoded data is decoded to generate the difference between the feature map and the asymptotic value, and the feature map is derived using the difference and the asymptotic value. The present disclosure is applicable to, for example, an information processing device, an image processing device, an electronic device, an information processing method, an image processing method, a program, or the like.
In this storage device that uses a non-volatile storage circuit, power consumption is reduced while data retention characteristics are improved. The storage device comprises a first non-volatile storage circuit, a detection unit, and a refresh processing unit. In this storage device that comprises a first non-volatile storage circuit, a detection unit, and a refresh processing unit, the detection unit detects a timing at which to refresh the first non-volatile storage circuit. The refresh processing unit refreshes the first non-volatile storage circuit at the timing detected by the detection unit.
G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
G11C 29/52 - Protection of memory contentsDetection of errors in memory contents
Voltage fluctuation is suppressed in an electronic circuit in which a pulse signal is used. This electronic circuit comprises a pulse signal output unit, a current suppression unit, and a transient current adjustment unit. The pulse signal output unit outputs a pulse signal. In the electronic circuit, the current suppression unit is configured from a prescribed number of metal-oxide-semiconductor (MOS) transistors connected in series to at least one of a power supply terminal and a ground terminal of the pulse signal output unit. The transient current adjustment unit controls the gate voltage of each of the MOS transistors.
G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
H10B 99/00 - Subject matter not provided for in other groups of this subclass
[Problem] To execute appropriate eye tracking. [Solution] This display device comprises a first pixel, a second pixel, and a control circuit. The first pixel emits light based on a video signal or an image signal in a display region for displaying an image. The second pixel radiates light in the infrared band in the peripheral region of the display region or in the display region. On the basis of a synchronization signal, the control circuit performs control in which at least the second pixel radiates light in the infrared band synchronously with the timing at which an external or internal image sensor images light in the infrared band.
G06F 3/01 - Input arrangements or combined input and output arrangements for interaction between user and computer
G06F 3/0346 - Pointing devices displaced or positioned by the userAccessories therefor with detection of the device orientation or free movement in a 3D space, e.g. 3D mice, 6-DOF [six degrees of freedom] pointers using gyroscopes, accelerometers or tilt-sensors
H04N 5/64 - Constructional details of receivers, e.g. cabinets or dust covers
The deterioration of the image quality of an imaging element is to be prevented. The imaging element includes an on-chip lens, a photoelectric conversion unit, and a plurality of in-layer lenses. The on-chip lens collects incident light from a subject. The photoelectric conversion unit performs photoelectric conversion on the collected incident light. The plurality of in-layer lenses that is arranged between the on-chip lens and the photoelectric conversion unit and that is configured to further collect the incident light that has passed through the on-chip lens. Furthermore, the plurality of in-layer lenses allows the incident light that has passed through any one of the plurality of in-layer lenses to be incident on the photoelectric conversion unit.
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
[Problem] To expand a dynamic range and output high quality image data with low power consumption. [Solution] A solid-state imaging device includes: a photoelectric conversion element; a charge-voltage conversion unit that converts charge photoelectrically converted by the photoelectric conversion element into a voltage; a capacitor that is connected to the charge-voltage conversion unit and adjusts a voltage level of the charge-voltage conversion unit; a first semiconductor layer in which the photoelectric conversion element and the capacitor are arranged; a signal line that transmits a pixel signal according to the voltage level of the charge-voltage conversion unit; and a comparator that is arranged on the signal line and compares the pixel signal with a predetermined reference signal.
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H04N 25/771 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
H04N 25/78 - Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
H04N 25/79 - Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
A semiconductor device includes a barrier layer, a channel layer, a regrowth layer, a vacancy generation region, and a source electrode or a drain electrode. The barrier layer includes a first nitride semiconductor. The channel layer includes a second nitride semiconductor and is bonded to the barrier layer at a first surface. The regrowth layer includes an n-type nitride semiconductor and is provided in a region dug deeper than an interface between the barrier layer and the channel layer from a second surface of the barrier layer. The second surface is on opposite side to the first surface. The vacancy generation region includes a nitrogen-capturing element and is provided in a region of the regrowth layer shallower than the interface between the barrier layer and the channel layer. The source electrode or the drain electrode is provided on the regrowth layer.
H10D 30/47 - FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
H10D 62/85 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
H10D 64/23 - Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
Gradation information acquisition and event detection without increased circuit area are disclosed. In one example, a photodetection device includes a first substrate and a second substrate stacked on each other, in which the first substrate has a pixel group including a first pixel that generates a pixel signal according to a light amount of incident light and a second pixel that detects a luminance change of the incident light. The second substrate has an event detection circuit that detects an event based on the luminance change of the second pixel, and at least a part of the event detection circuit is disposed in a region other than a region of a same size facing the pixel group on the second substrate.
Regarding a semiconductor device, it is possible to easily remove a cover member without leaving an adhesive for fixing the cover member in a state where the cover member is removed from a package main body portion, and it is possible to suppress entry of dust into a cavity without causing deformation of the package at a time of reflow. The semiconductor device includes: a semiconductor element; a package main body portion which includes a substrate portion on which the semiconductor element is installed, and a frame portion which is provided on the substrate portion so as to surround the semiconductor element and has an opening portion formed on an upper side; a cover member which is provided on the frame portion and closes the opening portion; and a covering portion which covers the package main body portion and the cover member so as to surround the package main body portion and the cover member from a side, thereby performing at least one of fixing the cover member to the frame portion or fixing a member forming the frame portion to a member forming the substrate portion.
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
In one example, an imaging device includes a light-receiving pixel, a first coupling terminal, a first voltage generation circuit, a drive circuit, a reference signal generation circuit, a noise correction circuit, a comparison circuit, and a processing circuit. The light-receiving pixel generates a pixel signal. The drive circuit is configured to drive the light-receiving pixel on the basis of a voltage from the first voltage generation circuit at the first coupling terminal. The reference signal generation circuit generates a reference signal having a ramp waveform. The noise correction circuit generates a noise correction signal corresponding to the voltage at the first coupling terminal, and superimposes the noise correction signal on the reference signal. The comparison circuit compares the pixel signal and the reference signal with the superimposed noise correction signal. The processing circuit calculates a pixel value based on a result of the comparison.
H04N 25/673 - Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction by using reference sources
A semiconductor device and an imaging device that allow a reduction in manufacturing cost. The semiconductor device includes a first semiconductor in which a plurality of first bonding electrodes is formed, a second semiconductor in which second bonding electrodes each bonded to a corresponding one of the first bonding electrodes are formed, the second semiconductor being smaller in planar size than the first semiconductor, and a third semiconductor in which third bonding electrodes each bonded to a corresponding one of the first bonding electrodes are formed, the third semiconductor being smaller in planar size than the first semiconductor. The second semiconductor and the third semiconductor are bonded to the same surface of the first semiconductor. The third bonding electrodes include electrodes formed to be larger in planar size than the second bonding electrodes. The present disclosure can be applied to, for example, a solid-state imaging device and the like.
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
74.
SEMICONDUCTOR PACKAGE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGE
This semiconductor package, to which a sensor chip is connected via a wire, suppresses image quality deterioration. The semiconductor package is provided with a substrate, a semiconductor chip, and a transparent material. Among the substrate, the semiconductor chip, and the transparent material in the semiconductor package, the semiconductor chip is connected to the substrate via a wire. Additionally, in the semiconductor package provided with the substrate, semiconductor chip, and transparent material, the transparent material, among the substrate, the semiconductor chip, and the transparent material, is adhered to the surface of the substrate on the light receiving side thereof.
A light detection device according to an embodiment of the present invention comprises a plurality of pixels (10). Each of the plurality of pixels (10) has a photoelectric conversion unit (11a) and three or more multiplication units (11b) connected in parallel to each other and connected in series to the photoelectric conversion unit (11a). The three or more multiplication units (11b) are divided into two or more groups and are short-circuited for each of the groups.
H10F 30/225 - Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
G01S 7/4861 - Circuits for detection, sampling, integration or read-out
A semiconductor device according to an aspect of the present disclosure includes: a plurality of fuse elements; and a selection element that is provided in common to the plurality of fuse elements and switches the plurality of fuse elements between a conduction target and a non-conduction target.
G11C 17/16 - Read-only memories programmable only onceSemi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
G11C 5/06 - Arrangements for interconnecting storage elements electrically, e.g. by wiring
H10B 20/25 - One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
77.
SOLID-STATE IMAGE-CAPTURING DEVICE, AND IMAGE-CAPTURING APPARATUS
A light detecting device is provided that includes a photoelectric conversion unit that generates charge in response to receiving light, a first node that is connected to the photoelectric conversion unit, a comparator that outputs a first signal in response to detecting that a potential of the first node is at least a predetermined potential, a resetting unit that resets the first node to a reset potential in response to detecting the first signal, a counting unit that counts a number of times the first signal is output by the comparator. and an amplifying unit that is connected to the first node and outputs a first analog signal.
H04N 25/59 - Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
H04N 25/778 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
H04N 25/78 - Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
H04N 25/79 - Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
Solid-state imaging devices configured to suppress large pixel to a small pixel light leakage are disclosed. In one example, a solid-state imaging device includes a pixel array in which unit pixels are two-dimensionally arranged. Each of the unit pixels includes a first photoelectric conversion unit that is formed in a semiconductor substrate, a second photoelectric conversion unit that has a smaller area than an area of the first photoelectric conversion unit, an inter-pixel light shielding film between the unit pixels on a side of incident light relative to the semiconductor substrate, a spacer layer that is provided on the side of the incident light relative to the inter-pixel light shielding film, and a light shielding wall between the unit pixels on the side of the incident light relative to the inter-pixel light shielding film and sections the spacer layer.
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
H04N 25/62 - Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
Photodetection elements and electronic devices with low power consumption in event detection are disclosed. In one example, a photodetection element includes a pixel array, a holding circuit, a control circuit, and a signal processing circuit. In the pixel array, event detection elements that detect an intensity difference of received light are arranged in a two-dimensional array. The holding circuit holds an event detected by the event detection elements. The control circuit controls a power supply voltage and a clock signal for the event detection element belonging to at least a partial region of the pixel array and the holding circuit corresponding to the event detection element. The signal processing circuit processes a signal output from the event detection element.
Provided is a photodetection device including a plurality of light-receiving elements that are arrayed in a matrix on a semiconductor substrate and detect light. Each of the light-receiving elements comprises: a photoelectric conversion part which is provided inside the semiconductor substrate and which generates electric charge in response to light incident from a first surface, which is the light-receiving surface of the semiconductor substrate; a transmission suppression part which is provided on a second surface of the semiconductor substrate located on the opposite side from the first surface and which suppresses the transmission of the light through the semiconductor substrate; and one or more multiplication regions which are provided on the second-surface side inside the semiconductor substrate and which amplify electric charge from the photoelectric conversion part. When each of the light-receiving elements is viewed from above the semiconductor substrate, the one or more multiplication regions are located in an area excluding a pixel center-of-gravity region of the light-receiving element.
A semiconductor device includes a base, a first FET that includes at least two channel structure portions laminated, the channel structure portions each including a channel portion having a nanowire structure, a gate insulation film, and a gate electrode, and a second FET that includes a channel forming layer, a gate insulation layer, and a gate electrode. The first FET and the second FET are provided above the base. The channel portions of the first FET are disposed apart from each other in a laminating direction of the channel structure portions. Assuming that each of a distance between the channel portions of the first FET is a distance L1 and that a thickness of the gate insulation layer of the second FET is a thickness T2, T2≥(L1/2) is satisfied.
H10D 62/17 - Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
H10D 84/83 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
82.
FILM FORMATION SIMULATION METHOD, FILM FORMATION SIMULATION PROGRAM, SIMULATION) SIMULATOR, AND FILM FORMATION DEVICE
A film formation simulation method according to an embodiment of the present disclosure includes a step of generating representative particles depending on an incident radical flux, and calculating adhesion, desorption, migration, and deposition of the respective representative particles to/from/on a film formation surface according to probability. The above-described step of the film formation simulation method includes expressing film quality and film coverage on the film formation surface by calculating the deposition as voxels imparted with status information indicating a bonded state or unbound state between the representative particles and the film formation surface.
There is provided a photoelectric conversion element, an imaging device, and an electronic apparatus that make it possible to improve a response speed. A first photoelectric conversion element (10) according to an embodiment of the present disclosure includes: a first electrode (11); a second electrode (16) disposed to be opposed to the first electrode (11); an organic layer (13) provided between the first electrode (11) and the second electrode (16) and including a hole-transporting material; a work function adjustment layer (15) provided between the second electrode (16) and the organic layer (13) and having an electron affinity or a work function larger than a work function of the first electrode (11); and an electron block layer (14) provided between the organic layer (13) and the work function adjustment layer (15) and having an anisotropic electric susceptibility of 413 or more or an intramolecular dipole moment of 1.84 debye or more.
In this image sensor having a laminated structure, a circuit scale of a semiconductor chip which does not correspond to a light-receiving side is reduced. A light-receiving region and a light-shielding region are provided to the light-receiving surface of a light-receiving chip. In the light-receiving region, at least a part of a first gradation pixel which generates, as a gradation signal, an analog signal having a voltage corresponding to an incident light amount and a part of a first detection pixel which detects whether a change amount of luminance exceeds a prescribed threshold value are arranged. In the light-shielding region, at least a part of a second gradation pixel and an invalidated second detection pixel are arranged. In a circuit chip, a remaining circuit of the first detection pixel and an analog-digital converter for converting the gradation signal into a digital signal are disposed.
An imaging element includes a photoelectric conversion unit including a first electrode 11, a photoelectric conversion layer 13, and a second electrode 12 that are stacked, in which the photoelectric conversion unit further includes a charge storage electrode 14 arranged apart from the first electrode 11 and arranged to face the photoelectric conversion layer 13 through an insulating layer 82, and when photoelectric conversion occurs in the photoelectric conversion layer 13 after light enters the photoelectric conversion layer 13, an absolute value of a potential applied to a part 13C of the photoelectric conversion layer 13 facing the charge storage electrode 14 is a value larger than an absolute value of a potential applied to a region 13B of the photoelectric conversion layer 13 positioned between the imaging element and an adjacent imaging element.
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
H04N 25/77 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
86.
SOLID-STATE IMAGING ELEMENT AND ELECTRONIC APPARATUS
To enhance a charge transfer efficiency in a transfer gate having a vertical gate electrode. A solid-state imaging element includes a photoelectric conversion section, a charge accumulating section, and a transfer gate. The photoelectric conversion section is formed in a depth direction of a semiconductor substrate, and generates charges corresponding to a quantity of received light. The charge accumulating section accumulates the charges generated by the photoelectric conversion section. The transfer gate transfers the charges generated by the photoelectric conversion section to the charge accumulating section. The transfer gate includes a plurality of vertical gate electrodes which is filled to a predetermined depth from an interface of the semiconductor substrate, and at least a part of a diameter is different in the depth direction of the semiconductor substrate.
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
A reduction in the visibility of an alignment mark of an imaging device configured by bonding a plurality of semiconductor substrates together is prevented. An imaging element includes a semiconductor substrate, a pad, an alignment mark, and a light shielding film. The semiconductor substrate includes a pixel region which is a region in which pixels for generating an image signal in accordance with incident light are disposed. The pad is disposed on a surface side of the semiconductor substrate. The alignment mark is disposed on a back surface side of the semiconductor substrate. The light shielding film is disposed between the pad and the alignment mark.
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
88.
SOLID-STATE IMAGING APPARATUS, IMAGING APPARATUS, AND ELECTRONIC APPARATUS
The present disclosure relates to a solid-state imaging apparatus, an imaging apparatus, and an electronic apparatus capable of achieving downsizing and height reduction of an apparatus configuration. There are provided a solid-state imaging element configured to capture an image including a pixel signal corresponding to a light amount of incident light, and a lens group including a plurality of lenses configured to condense the incident light and form an image on an imaging surface of the solid-state imaging element, and at least one of the plurality of lenses constituting the lens group is a visible light cut lens configured to cut a visible light ray from the incident light and transmit the incident light. The present disclosure can be applied to a solid-state imaging apparatus.
Flare due to light incident on an outer peripheral side of a pixel region is to be prevented.
A photodetection device includes a semiconductor substrate having a pixel region in which a plurality of pixels that perform photoelectric conversion is disposed. The semiconductor substrate includes: a groove portion that is disposed on the outer peripheral side of the pixel region, has a smaller height than the height of the pixel region, and extends along a plurality of sides; a protruding portion that is provided on the outer peripheral side of the groove portion, has a greater height than the height of the groove portion, and extends along the plurality of sides; and a covering film that covers the entire region of the surface on the light incident surface side of the protruding portion on at least one side of the plurality of sides.
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 21/66 - Testing or measuring during manufacture or treatment
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
Display devices with suppressed moisture entry into the display area are disclosed. In one example, a display device includes a light emitting element substrate in which an inorganic insulating layer and a light emitting element are formed in this order on a substrate, and a protective layer that covers an upper surface side of the light emitting element substrate. The protective layer is provided with a planarizing layer and a functional layer different from the planarizing layer on an upper side of the protective layer. The inorganic insulating layer has at least one of a groove or a step. The protective layer includes a covering portion that covers at least a part of the groove or the step.
The present technology relates to a light detection device with which effects caused by flare can be reduced. The present invention comprises: pixels having a multiplication region for multiplying a carrier by means of a high electric field region; an inter-pixel separation part for separating one pixel from another adjacent pixel on a semiconductor substrate on which the pixels are formed; and lenses disposed on a light incident surface side of the pixels, the lenses being disposed so as to be shifted by a half pitch in an up-down direction or a left-right direction from an adjacent lens. The present technology can be applied to, for example, a single photon avalanche diode (SPAD) element, and an imaging device or distance measuring device including a SPAD element.
A sensing device according to one embodiment of the present technology includes an antenna unit, a power generation unit, and a sensing unit. The antenna unit is provided in the vicinity of a high-voltage line for power transmission, is connected to a first conductor and a second conductor that generate a potential difference therebetween, and forms an antenna by the first conductor and the second conductor. The power generation unit harvests the output of the antenna unit as power. The sensing unit is driven by the power from the power generation unit, and performs a detection operation for detecting, using a predetermined sensor, the state of a related facility or a surrounding environment of the high-voltage line.
H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
H02J 13/00 - Circuit arrangements for providing remote indication of network conditions, e.g. an instantaneous record of the open or closed condition of each circuitbreaker in the networkCircuit arrangements for providing remote control of switching means in a power distribution network, e.g. switching in and out of current consumers by using a pulse code signal carried by the network
93.
DEVICE, CONTROL METHOD FOR DEVICE, AND CONTENT DISTRIBUTION SYSTEM
Provided is a device comprising: a content management unit that operates in a memory space and decodes content distributed in an encrypted state; a storage unit that stores information for enabling the content management unit to operate; and a memory management unit that protects information stored in the storage unit and/or information used by the content management unit.
[Problem] To make it possible to suppress deterioration of extraction processing accuracy of an object region. [Solution] This information processing device comprises a generation processing unit and an extraction processing unit. The generation processing unit generates a two-dimensional distance variation value per prescribed time on the basis of difference values between a plurality of pieces of two-dimensional distance measurement value data generated in time series. The extraction processing unit extracts a two-dimensional target region on the basis of the two-dimensional distance variation values. In addition, the extraction processing unit can generate, as a target region, a region exceeding a prescribed threshold value among the two-dimensional distance variation values.
The present disclosure relates to a light detection device that makes it possible to further reduce dark current. A light detection device according to the present invention comprises a semiconductor layer that has a light reception surface, a plurality of pixels that are provided to the semiconductor layer and have a photoelectric conversion region that makes light that enters the light reception surface undergo a photoelectric conversion, first trenches that are provided between adjacent pixels and open to at least the light reception surface side, and a transparent electrode that is formed from a light-transmitting transparent oxide semiconductor and covers the light reception surface and side walls of the first trenches. The present invention can be applied, for example, to light detection devices.
The present invention achieves a high saturation charge amount Qs. This light detection device comprises: a semiconductor layer having a first surface part and a second surface part each located on opposite sides in one direction; a shallow separation region provided on the first surface part side of the semiconductor layer; an element formation region demarcated by the shallow separation region on the first surface part side of the semiconductor layer and provided with a pixel transistor; and a photoelectric conversion region demarcated by a deep separation region extending from the second surface part side of the semiconductor layer toward the first surface part side and provided with a photoelectric conversion part. In the deep separation region, a portion overlapping the element formation region in plan view protrudes further toward a first surface side of the semiconductor layer than a bottom part of the shallow separation region.
Demodulation values according to the present disclosure may refer to values based on which a distance can be determined, such as I-values and Q-values, as commonly known in the field of indirect time-of-flight depth sensing. According to the present disclosure, first a phase value and a confidence value may be obtained from raw data (e.g., tap signal) in order to obtain the demodulation values. The phase value and the confidence value may correspond to a polar coordinate display of the I- and Q-value. I and Q according to the present disclosure may be named pseudo-IQ since they are not directly derived from tap values, but instead, are determined based on phase and confidence, i.e. phase and confidence are obtained before I and Q are generated. This is due to the application of Hamiltonian coding in the present disclosure which gives as a result a phase value and a confidence value. In order to remove multipath-interference (MPI) of a time-of flight signal with direct-global separation (DGS), phase and confidence may not be useful and instead, I and Q may be used as an input to a DGS algorithm, such that the pseudo-IQ values (i.e., at least two demodulation values) are used for that. Hence, in some embodiments, an influence of MPI on resulting ToF data is removed based on the at least two demodulation values.
G01S 17/32 - Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated
G01S 17/894 - 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
G01S 7/4915 - Time delay measurement, e.g. operational details for pixel componentsPhase measurement
G01S 17/36 - Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated with phase comparison between the received signal and the contemporaneously transmitted signal
A row driver assembly includes a row driver unit. The row driver unit includes a buffer circuit that drives a control signal to a pixel circuit. The buffer circuit is electrically connected to a high buffer supply voltage and to a low buffer supply voltage. A voltage converter circuit supplies the low buffer supply voltage to the buffer circuit. An error detection circuit outputs an active error signal when the low buffer supply voltage is outside a target voltage window.
Reduced circuit area in a reception device that distributes wireless signals is disclosed. In one example, a low noise amplifier includes an input matching circuit that converts an input impedance of a downstream circuit, and an amplifier circuit that amplifies a wireless signal received from the input matching circuit. A power splitter includes a first output matching circuit that converts a first load impedance into a first impedance related to a load impedance ZL of the low noise amplifier, and a second output matching circuit that converts a second load impedance into a second impedance related to the ZL.
Provided are a solid-state imaging element and an electronic apparatus capable of suppressing a decrease in performance of an AF function using a phase difference pixel. According to the present disclosure, there is provided a solid-state imaging element including: first phase difference pixels, each pupil-dividing incident light from a subject and detecting an image plane phase difference; a control circuit that controls driving of the first phase difference pixels; and a signal processing section that converts an analog signal non-destructively read a plurality of times from each of the first phase difference pixels into a digital signal according to control of the control circuit.
