Parking region analysis for display of available and potentially available parking regions is disclosed. In one example, a parking region analyzer accesses a camera-captured image and analyzes whether or not a vehicle is able to be parked. A display controller generates parking possibility identification graphic data on the basis of the analysis and superimposes and displays the data on the camera-captured image.
G08G 1/14 - Systèmes de commande du trafic pour véhicules routiers indiquant des places libres individuelles dans des parcs de stationnement
B60K 35/28 - Dispositions de sortie, c.-à-d. du véhicule à l'utilisateur, associées aux fonctions du véhicule ou spécialement adaptées à celles-ci caractérisées par le type d’informations de sortie, p. ex. divertissement vidéo ou informations sur la dynamique du véhiculeDispositions de sortie, c.-à-d. du véhicule à l'utilisateur, associées aux fonctions du véhicule ou spécialement adaptées à celles-ci caractérisées par la finalité des informations de sortie, p. ex. pour attirer l'attention du conducteur
B60W 30/06 - Manœuvre automatique de stationnement
B60W 50/14 - Moyens d'information du conducteur, pour l'avertir ou provoquer son intervention
G06V 10/26 - Segmentation de formes dans le champ d’imageDécoupage ou fusion d’éléments d’image visant à établir la région de motif, p. ex. techniques de regroupementDétection d’occlusion
G06V 10/82 - Dispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant les réseaux neuronaux
G06V 20/58 - Reconnaissance d’objets en mouvement ou d’obstacles, p. ex. véhicules ou piétonsReconnaissance des objets de la circulation, p. ex. signalisation routière, feux de signalisation ou routes
The present technology relates to a lens optical system and an imaging apparatus capable of improving optical performance in a wide-angle lens optical system having a metasurface. The lens optical system includes, in order from an incident side of light, a metalens having positive refractive power and an optical lens having positive refractive power. A metasurface including a plurality of nanostructures is arranged in the metalens. An aperture stop is arranged on the incident side of the metasurface. At least one optical surface of the second lens has an aspherical shape. The present technology can be applied to, for example, a wide-angle lens optical system that condenses light from a subject on a solid-state imaging element.
G02B 9/08 - Objectifs optiques caractérisés à la fois par le nombre de leurs composants et la façon dont ceux-ci sont disposés selon leur signe, c.-à-d. + ou — ayant uniquement deux composants deux composants + associés à un diaphragme
G02B 1/00 - Éléments optiques caractérisés par la substance dont ils sont faitsRevêtements optiques pour éléments optiques
G02B 3/04 - Lentilles simples ou composées à surfaces non sphériques à surfaces continues engendrées par une rotation autour d'un axe, mais s'écartant d'une véritable sphère
G02B 9/34 - Objectifs optiques caractérisés à la fois par le nombre de leurs composants et la façon dont ceux-ci sont disposés selon leur signe, c.-à-d. + ou — ayant uniquement quatre composants
An information processing apparatus includes, a matching circuit that receives a first image indicating a field of view in a prescribed space based on three-dimensional point cloud data that represents the prescribed space by a point cloud and a second image captured in the prescribed space, and matches the second image and the first image, and a position information providing circuit that generates second position information based on first position information about an origin of the field of view indicated by the first image matched with the second image and provides the second position information to update the three-dimensional point cloud data.
[Problem] To make it possible to perform image processing on a region based on a viewing point while suppressing a data transmission amount. [Solution] This control circuit comprises: an acquisition unit that acquires first image data; an image processing unit that is capable of performing either first processing for generating a second pixel value using the pixel values of a plurality of first pixels in the first image data and/or second processing for increasing resolution by dividing each first pixel into a plurality of pixels while maintaining the pixel value of the first pixel, performs at least the first processing, and generates second image data having the second pixel value; and a display control unit that causes a display unit to display an image based on the second image data.
G09G 3/20 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice
G09G 5/00 - Dispositions ou circuits de commande de l'affichage communs à l'affichage utilisant des tubes à rayons cathodiques et à l'affichage utilisant d'autres moyens de visualisation
G09G 5/391 - Circuits pour modifier la résolution, p. ex. des formats variables de l'écran
The present invention improves ranging performance in a mechanical ranging device. This ranging device (100) is provided with an emission-side mirror (222), a light-emitting unit (120), a light-receiving-side mirror (221), a light-receiving unit (130), and a ranging calculation unit (150). The emission-side mirror (222) can rotate about a predetermined rotation shaft (224). The light-emitting unit (120) emits laser light to the emission-side mirror (222). The light-receiving-side mirror (221) can rotate about the rotation shaft (224) together with the emission-side mirror (222), and the distance between the light-receiving-side mirror (221) and the rotation shaft is different from that between the emission-side mirror (222) and the rotation shaft. The light-receiving unit (130) receives the laser light reflected by the light-receiving-side mirror (221). The ranging calculation unit (150) calculates a distance on the basis of the signal from the light-receiving unit (130).
G01S 7/481 - Caractéristiques de structure, p. ex. agencements d'éléments optiques
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
The purpose of the present invention is to provide a technology for shortening the temperature switching speed of a waveguide and improving the switching performance of an optical switch by appropriately controlling a voltage waveform to be applied to a heater. The present technology provides an optical switch and the like. The optical switch changes the phase of light on the basis of a thermooptic effect, and comprises: a heater that changes the temperature of a region in which the refractive index changes by the thermooptic effect; and a waveform generation unit that generates a voltage waveform for controlling a temporal change in voltage to be applied to the heater. The waveform generation unit changes the voltage from an initial voltage toward a limit voltage (maximum voltage or minimum voltage) in the shortest possible time, and thereafter changes the voltage from the limit voltage toward a target voltage.
G02F 1/01 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur
G01C 3/06 - Utilisation de moyens électriques pour obtenir une indication finale
The present technology relates to an information processing device and a vehicle that make it possible to perform automatic parking in accordance with a user's preferences. The information processing device comprises a parking lot map generating unit that generates a parking lot map of a parking lot on the basis of a sensing result of a sensor mounted in the vehicle, and a contextual information generating unit that generates contextual information of the parking lot on the basis of the sensing result and the parking lot map, wherein the parking lot map generating unit generates a contextual parking lot map in which the contextual information is added to the parking lot map. The present technology is applicable to vehicle control systems for vehicles that perform autonomous driving, for example.
[Problem] To reduce variations in output level. [Solution] This solid-state imaging device comprises a light-receiving element, a transfer transistor, a first transistor, and a voltage retention circuit. A first terminal of the transfer transistor is connected to an output terminal of the light-receiving element. When an ON signal is applied to a drive terminal, the transfer transistor transfers a signal output by the light-receiving element to the second terminal. A first terminal of the first transistor is connected to a power supply line, and a second terminal thereof is connected to the first terminal of the transfer transistor or the second terminal of the transfer transistor. The voltage retention circuit is connected between the drive terminal of the first transistor and the second terminal of the first transistor.
H04N 25/70 - Architectures de capteurs SSISCircuits associés à ces dernières
H04N 25/59 - Commande de la gamme dynamique en commandant la quantité de charge stockable dans le pixel, p. ex. en modifiant le rapport de conversion de charge de la capacité du nœud flottant
H04N 25/60 - Traitement du bruit, p. ex. détection, correction, réduction ou élimination du bruit
9.
VOLTAGE-CURRENT CONVERSION CIRCUIT AND IMAGING DEVICE
Provided is a voltage-current conversion circuit having an increased time constant of a low-pass filter while having a suppressed increase in capacitance. This voltage-current conversion circuit comprises: a super source follower circuit provided with an input transistor to which an input voltage is input; a resistive element connected in series to the source of the input transistor; and a capacitive element connected to the drain of the input transistor. The super source follower circuit may include: a current source transistor connected in series to the input transistor; and a feedback transistor having a gate connected to the drain of the input transistor and a drain connected to the source of the input transistor.
A sensor device (100) is provided that comprises an imaging unit (110) that is configured to capture raw images of a scene, a first image signal processing, ISP, unit (120) that is configured to generate first image data by performing a first type of image signal processing on the raw images, a second ISP unit (130) that is different from the first ISP unit (120) and configured to generate second image data by performing a second type of image signal processing on the raw images, and a first serializer/deserializer (140) that is configured to transmit the first image data to a first image processing chip (210), wherein the sensor device (100) is configured to transmit the second image data to a second image processing chip (220).
H04N 23/60 - Commande des caméras ou des modules de caméras
H04N 23/667 - Changement de mode de fonctionnement de la caméra, p. ex. entre les modes photo et vidéo, sport et normal ou haute et basse résolutions
H04N 23/80 - Chaînes de traitement de la caméraLeurs composants
B60R 1/00 - Dispositions pour la visibilité optiqueDispositions de visualisation en temps réel pour les conducteurs ou les passagers utilisant des systèmes de capture d’images optiques, p. ex. des caméras ou des systèmes vidéo spécialement adaptés pour être utilisés dans ou sur des véhicules
11.
SOLID-STATE IMAGING DEVICE, ELECTRONIC APPARATUS, AND PROGRAM
Authentication accuracy is improved. A solid-state imaging device includes a light source, a first light receiving region, and a second light receiving region. The light source is provided on an opposite side of a display surface of a display, and emits light in an infrared light band via the display. The first light receiving region is provided on an opposite side of the display surface of the display, and includes a pixel that receives light in a visible light band and a pixel that receives at least light in an infrared light band emitted from the light source. The second light receiving region is provided on an opposite side of the display surface of the display, and includes a pixel that receives at least light in an infrared light band emitted from the light source.
H04N 23/611 - Commande des caméras ou des modules de caméras en fonction des objets reconnus les objets reconnus comprenant des parties du corps humain
G01S 17/86 - Combinaisons de systèmes lidar avec des systèmes autres que lidar, radar ou sonar, p. ex. avec des goniomètres
G01S 17/894 - Imagerie 3D avec mesure simultanée du temps de vol sur une matrice 2D de pixels récepteurs, p. ex. caméras à temps de vol ou lidar flash
G06V 40/16 - Visages humains, p. ex. parties du visage, croquis ou expressions
H04N 23/56 - Caméras ou modules de caméras comprenant des capteurs d'images électroniquesLeur commande munis de moyens d'éclairage
H04N 23/63 - Commande des caméras ou des modules de caméras en utilisant des viseurs électroniques
12.
PHOTOELECTRIC CONVERTER, SOLID-STATE IMAGE SENSOR, AND RANGING SYSTEM
A photoelectric converter according to an aspect of the present disclosure includes a semiconductor layer that is a SiGe layer or a Ge layer and a photodiode formed in the semiconductor layer. This solid-state image sensor further includes a transistor and a Si layer. The transistor has a source region and a drain region in the semiconductor layer and has a gate electrode in contact with the semiconductor layer via a gate insulating film. The Si layer is formed at an interface between the semiconductor layer and the gate insulating film.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
13.
IMAGE PROCESSING DEVICE, IMAGE PROCESSING METHOD, AND RECORDING MEDIUM
An image processing device includes circuitry that recognizes and extracts an object included in a captured image, and that converts, using an artificial intelligence (AI) model, a region image including the object to generate a feature image. The circuitry generates a mask image by combining the captured image with the feature image.
G06V 10/25 - Détermination d’une région d’intérêt [ROI] ou d’un volume d’intérêt [VOI]
G06V 10/764 - Dispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant la classification, p. ex. des objets vidéo
G06V 10/778 - Apprentissage de profils actif, p. ex. apprentissage en ligne des caractéristiques d’images ou de vidéos
There is provided an imaging device. The imaging device according to an embodiment of the present disclosure includes an imaging section, a diagnosis section, and an output section. The imaging section is configured to perform an imaging operation. The diagnosis section is configured to perform diagnosis processing of a defect of the imaging section. The output section is configured to output a first flag signal corresponding to a result of the diagnosis processing. The output section is configured to set the first flag signal to a ground level in a case where the result of the diagnosis processing indicates a predictor of a defect.
A store driver circuit of this storage circuit includes a first transistor and a second transistor that are cascode-connected. The gates of the first transistor and the second transistor of the store driver circuit are connected to a node of a latch circuit. The cascode connection points of the first transistor and the second transistor of the store driver circuit are connected to a magnetoresistive element. A current terminal of the first transistor or the second transistor of the store driver circuit is directly connected to a power supply voltage or a reference voltage.
G11C 14/00 - Mémoires numériques caractérisées par des dispositions de cellules ayant des propriétés de mémoire volatile et non volatile pour sauvegarder l'information en cas de défaillance de l'alimentation
H03K 19/173 - Circuits logiques, c.-à-d. ayant au moins deux entrées agissant sur une sortieCircuits d'inversion utilisant des éléments spécifiés utilisant des circuits logiques élémentaires comme composants
16.
DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE
A display device according to an embodiment comprises: a display unit; and an imaging element that is for detecting the line-of-sight, is provided outside the display unit, and is integrated with the display unit.
G09F 9/00 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
H10K 59/95 - Ensembles de plusieurs dispositifs comprenant au moins un élément organique émetteur de lumière dans lesquels tous les éléments émetteurs de lumière sont organiques, p. ex. ensembles d'affichages à OLED
H10K 71/00 - Fabrication ou traitement spécialement adaptés aux dispositifs organiques couverts par la présente sous-classe
H10K 77/10 - Substrats, p. ex. substrats flexibles
The present invention improves image quality in an image sensor in which high-sensitivity sub-pixels and low-sensitivity sub-pixels are disposed. The image sensor comprises a pixel array unit and a column processing unit. Disposed in the pixel array unit of the image sensor are a plurality of pixels, each including a high-sensitivity sub-pixel that has a sensitivity higher than a prescribed value and a low-sensitivity sub-pixel that has a sensitivity lower than a prescribed value. At least two low-sensitivity sub-pixels are disposed adjacently. The column processing unit performs AD conversion of the respective pixel signals of the low-sensitivity sub-pixels and the high-sensitivity sub-pixels.
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
H04N 25/585 - Commande de la gamme dynamique impliquant plusieurs expositions acquises simultanément avec des pixels ayant des sensibilités différentes à l'intérieur du capteur, p. ex. des pixels rapides ou lents ou des pixels ayant des tailles différentes
The present disclosure relates to a photodetector and electronic equipment that can achieve miniaturization and improve performance of phase difference detection. This photodetector has a pixel array section in which hexagonal pixels are arranged in an array, each pixel having a microlens and a photoelectric conversion section that is divided into multiple sections in a planar view. The photodetector is configured so that a phase difference is detected by using signals obtained from the multiple photoelectric conversion sections below the microlenses. The present disclosure can be applied to, for example, a photodetector that photoelectrically converts incident light and detects a phase difference.
The present disclosure relates to a light detecting device that makes it possible to suppress a sudden drop in potential. The light detecting device comprises: a pixel array unit in which pixels are arranged, each pixel having an optical pulse response unit including at least a photoelectric conversion unit that multiplies charges generated from photons and a recharge unit that recharges the photoelectric conversion unit; and a capacitance provided between a first potential and a second potential for causing a current to flow through the optical pulse response unit in response to the incidence of photons, in units of one or a plurality of pixels. The present disclosure is applicable to image sensors that employ SPADs, for example.
H04N 25/773 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des convertisseurs A/N, V/T, V/F, I/T ou I/F comprenant des circuits de comptage de photons, p. ex. des diodes de détection de photons uniques [SPD] ou des diodes à avalanche de photons uniques [SPAD]
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
In order to achieve the above purpose, an information processing system according to one embodiment of the present technology is used for generating AR content, the information processing system comprising: a display device including a display unit that is capable of displaying AR content to a user, an imaging unit that is capable of imaging the environment surrounding the user, and a transmission unit that transmits a prompt for generating content to be displayed in the AR content; and a content generation device including a content generation unit that generates content on the basis of the prompt, and a content arrangement unit that, on the basis of a real image, arranges the content within the real image. The display device furthermore includes an AR content generation unit that generates the AR content on the basis of a composite image in which the content is arranged within the real image by the content arrangement unit.
A light detection device according to one embodiment of the present disclosure comprises: a semiconductor substrate having a first surface and a second surface that face each other; a first photoelectric conversion unit that is disposed on the first surface side and converts light into an electric charge; first through wiring that passes between the first surface and second surface of the semiconductor substrate and transfers the electric charge; a first well region that is provided so as to span the entire surface of the semiconductor substrate and is of a first conductivity type; a second well region that is provided so as to surround the first through wiring and is of the first conductivity type; and a third well region that is provided between the first well region and the second well region, electrically separates the first well region and the second well region, and is of a second conductivity type different from the first conductivity type.
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
H10F 30/20 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors
H10K 30/30 - Dispositifs organiques sensibles au rayonnement infrarouge, à la lumière, au rayonnement électromagnétique de plus courte longueur d'onde ou au rayonnement corpusculaire comprenant des hétérojonctions de masse, p. ex. des réseaux interpénétrés de domaines de matériaux donneurs et accepteurs
H10K 30/60 - Dispositifs organiques sensibles au rayonnement infrarouge, à la lumière, au rayonnement électromagnétique de plus courte longueur d'onde ou au rayonnement corpusculaire dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photorésistances
22.
INFORMATION PROCESSING DEVICE AND INFORMATION PROCESSING METHOD
[Problem] To make it possible to suppress processing time while maintaining processing accuracy in analog-to-digital conversion processing. [Solution] The present disclosure provides an information processing device comprising: a cell array that has cells which output a calculated voltage to a signal line on the basis of an input signal and a coefficient to be retained; an analog-to-digital converter that outputs a digital value on the basis of a ramp voltage and the voltage of the signal line; and a voltage control unit that controls the voltage range of the ramp voltage.
H03M 1/56 - Comparaison du signal d'entrée avec une rampe linéaire
G06N 3/04 - Architecture, p. ex. topologie d'interconnexion
G11C 7/16 - Emmagasinage de signaux analogiques dans des mémoires numériques utilisant une disposition comprenant des convertisseurs analogiques/numériques [A/N], des mémoires numériques et des convertisseurs numériques/analogiques [N/A]
G11C 11/54 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments simulateurs de cellules biologiques, p. ex. neurone
23.
INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND PROGRAM
This information processing device comprises a receiving unit that receives metadata generated on the basis of the results of sensing, and an answer acquiring unit that generates a prompt to be input to a large language model and inputs the prompt to the large language model to obtain an answer, wherein the answer acquiring unit executes: first prompt generation processing for generating a prompt for instructing analysis of the metadata and identification of a problem; second prompt generation processing for generating a prompt for instructing a search for solutions that solve the identified problem; third prompt generation processing for generating a prompt for instructing a requirements definition of an application for realizing a solution selected by a user from among the solutions obtained by the search; and fourth prompt generation processing for generating a prompt for instructing generation of an application based on the requirements definition.
Reliability is improved in a semiconductor device in which an annular trench is formed around a through hole. A semiconductor device includes a semiconductor substrate, a through wiring, a back surface insulating film, and an annular trench. A wiring layer is formed on a front surface of the semiconductor substrate. The through hole penetrates the semiconductor substrate. The through wiring is formed along a side surface of the through hole. The back surface insulating film covers a back surface of the semiconductor substrate with respect to the front surface. The annular trench surrounds the periphery of the through hole when viewed from a direction perpendicular to the back surface, and a cavity closed by the back surface insulating film when viewed from the direction parallel to the back surface is formed inside.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
The present technology relates to a photodetection device and an electronic apparatus capable of improving reliability of a light condensing design. A photodetection device according to one aspect of the present technology includes: a semiconductor substrate including a photoelectric conversion unit; a spacer layer that is provided on the semiconductor substrate; a meta-surface layer that is provided on the spacer layer; and a sidewall protective film that is provided at least on a sidewall of the spacer layer. The present technology can be applied to an image sensor including a meta-surface layer.
To reduce manufacturing cost by simplifying a configuration for switching an electronic shutter method. Provided is an imaging device including: a photoelectric conversion unit that converts light into charge; an overflow transistor connected to the photoelectric conversion unit; a transfer transistor connected to the photoelectric conversion unit; a reset transistor connected to the transfer transistor; a capacitor connected between the transfer transistor and the reset transistor; and an amplifier transistor connected between the transfer transistor and the reset transistor.
H04N 23/667 - Changement de mode de fonctionnement de la caméra, p. ex. entre les modes photo et vidéo, sport et normal ou haute et basse résolutions
H04N 23/11 - Caméras ou modules de caméras comprenant des capteurs d'images électroniquesLeur commande pour générer des signaux d'image à partir de différentes longueurs d'onde pour générer des signaux d'image à partir de longueurs d'onde de lumière visible et infrarouge
H04N 25/531 - Commande du temps d'intégration en commandant des obturateurs déroulants dans un capteur SSIS CMOS
H04N 25/532 - Commande du temps d'intégration en commandant des obturateurs globaux dans un capteur SSIS CMOS
H04N 25/778 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des amplificateurs partagés entre une pluralité de pixels, c.-à-d. qu'au moins une partie de l'amplificateur doit se trouver sur la matrice de capteurs elle-même
A light detection device of the present disclosure comprises: a light-receiving layer which has a plurality of pixels that each include a plurality of divided pixels and that each detect light of different colors and in which light-receiving elements are disposed with respect to the respective plurality of divided pixels; and a light-condensing layer which condenses incident light toward the light-receiving layer. The plurality of pixels have a first pixel which detects first color light and a second pixel which detects second color light. The light-condensing layer condenses the incident light from a light-condensing region with a first area for each divided pixel with respect to at least the first pixel among the plurality of pixels, and condenses the incident light from a light-condensing region with a second area greater than the first area onto the entire second pixel with respect to at least the second pixel among the plurality of pixels.
H04N 25/10 - Circuits de capteurs d'images à l'état solide [capteurs SSIS]Leur commande pour transformer les différentes longueurs d'onde en signaux d'image
H04N 25/70 - Architectures de capteurs SSISCircuits associés à ces dernières
H04N 25/704 - Pixels spécialement adaptés à la mise au point, p. ex. des ensembles de pixels à différence de phase
28.
IMAGE PROCESSING DEVICE, IMAGE PROCESSING METHOD, AND IMAGING SYSTEM
An information processing device according to the present disclosure comprises a control unit. The control unit encodes a first frame image to generate a first code word. The control unit generates a motion vector from a second frame image having a higher frame rate than the first frame image. The control unit generates a second code word of an interpolation frame image for interpolating the first frame image according to the motion vector. The control unit synthesizes the first code word and the second code word to generate a synthesized code word.
H04N 19/587 - Procédés ou dispositions pour le codage, le décodage, la compression ou la décompression de signaux vidéo numériques utilisant le codage prédictif mettant en œuvre un sous-échantillonnage ou une interpolation temporels, p. ex. décimation ou interpolation subséquente d’images dans une séquence vidéo
H04N 19/132 - Échantillonnage, masquage ou troncature d’unités de codage, p. ex. ré-échantillonnage adaptatif, saut de trames, interpolation de trames ou masquage de coefficients haute fréquence de transformée
H04N 19/139 - Analyse des vecteurs de mouvement, p. ex. leur amplitude, leur direction, leur variance ou leur précision
H04N 19/172 - Procédés ou dispositions pour le codage, le décodage, la compression ou la décompression de signaux vidéo numériques utilisant le codage adaptatif caractérisés par l’unité de codage, c.-à-d. la partie structurelle ou sémantique du signal vidéo étant l’objet ou le sujet du codage adaptatif l’unité étant une zone de l'image, p. ex. un objet la zone étant une image, une trame ou un champ
H04N 19/503 - Procédés ou dispositions pour le codage, le décodage, la compression ou la décompression de signaux vidéo numériques utilisant le codage prédictif mettant en œuvre la prédiction temporelle
29.
LIGHT DETECTION DEVICE, IMAGING DEVICE, AND ELECTRONIC APPARATUS
The present disclosure pertains to a light detection device, an imaging device, and an electronic apparatus with which it is possible to improve sensitivity and acquire appropriate phase difference information while suppressing color mixing. A reflection wall having a refractive index lower than a predetermined refractive index is provided between respective color filters of pixels including a regular pixel and a phase difference pixel having a light shielding film for detecting phase difference. An end part of the light shielding film is formed so as to extend below the reflection wall, where the incidence direction of incident light on a pixel is from above to below. The present disclosure can be applied to a light detection device.
Provided is a semiconductor apparatus including a semiconductor substrate having a front surface on which a wiring layer is formed, a through hole that penetrates the semiconductor substrate, a through wire formed along a side surface of the through hole, and an annular trench that surrounds a circumference of the through hole when seen in a direction perpendicular to a rear surface of the semiconductor substrate which is on a side opposite to the front surface and that has formed therein a cavity when seen in a direction parallel to a rear surface.
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 23/528 - Configuration de la structure d'interconnexion
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
31.
SERVER DEVICE, TERMINAL DEVICE, INFORMATION PROCESSING METHOD, AND INFORMATION PROCESSING SYSTEM
An information processing system configured to transmit a first command to a first electronic device requesting processing capability information of the first electronic device; receive first parameters from the first electronic device in response to the first command; divide a deep neural network (DNN) into at least a first DNN and a second DNN based on the first parameters received from the first electronic device; and transmit the first divided DNN to the first electronic device.
A device capable of improving characteristics of a light sensor by applying an appropriate bias voltage to the light sensor. A device according to one embodiment includes a first light source configured to emit a first light, a second light source configured to emit a second light having a first characteristic different from a second characteristic of the first light, a first light sensor configured to detect first reflected light that is the first light emitted from the first light source and reflected by an object, and a second light sensor configured to detect second reflected light that is the second light emitted from the second light source and reflected by a first member that is distinct from the object.
G01S 7/4863 - Réseaux des détecteurs, p. ex. portes de transfert de charge
G01S 7/481 - Caractéristiques de structure, p. ex. agencements d'éléments optiques
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
To improve ranging accuracy with a small number of times of light emission and light reception regardless of a distance of an object.
A photodetection device includes: a light receiving section that receives, within a first time range, a first reflected light pulse signal in which a first light pulse signal emitted at a first time interval is reflected by an object, and receives, within a second time range different from the first time range, a second reflected light pulse signal in which a second light pulse signal emitted at a second time interval different from the first time interval is reflected by the object; and a histogram generator that generates a first histogram in which a light reception frequency of the first reflected light pulse signal received within the first time range is classified for each predetermined fixed unit period, and generates a second histogram in which a light reception frequency of the second reflected light pulse signal received within the second time range is classified for each unit period.
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
G01S 17/931 - Systèmes lidar, spécialement adaptés pour des applications spécifiques pour prévenir les collisions de véhicules terrestres
34.
APPARATUSES AND METHODS FOR POLARIZATION BASED SURFACE NORMAL IMAGING
The present disclosure relates to an apparatus for polarization-based surface normal imaging, the apparatus comprising a linear polarizer configured to rotate and to subsequently pass light from a scene, an event-based vision sensor. EVS, configured to detect a set of events of the scene based on the rotation angle of the linear polarizer, and a shape estimation processor configured to compute surface normal information of the scene based on the set of events and the corresponding rotation angle of the polarizer.
H04N 25/47 - Capteurs d'images avec sortie d'adresse de pixelCapteurs d'images commandés par événementSélection des pixels à lire en fonction des données d'image
35.
INFORMATION PROCESSING DEVICE AND INFORMATION PROCESSING SYSTEM
[Problem] To automatically identify work to be performed on a vehicle. [Solution] An information processing device comprising a processing unit that identifies the start of work on the basis of the overlapping of a first detection target of a vehicle and a second detection target that performs work on the vehicle in an image captured by a camera.
A light detection device according to an embodiment of the present disclosure comprises: a semiconductor layer; first photoelectric conversion regions and second photoelectric conversion regions provided adjacent to each other in the semiconductor layer; and light collection elements provided above the semiconductor layer. The semiconductor layer has first protrusion parts provided between the light collection elements and the first photoelectric conversion regions.
A light emission driving device according to the present technology comprises: a first accumulation selection unit that selects, in accordance with a charge signal, whether or not to perform charge accumulation in a first charge accumulation unit using a power supply; a second accumulation selection unit that selects, in accordance with a charge signal, whether or not to perform charge accumulation in a second charge accumulation unit using the power supply; and an output selection unit that selects, in accordance with a boost signal, whether or not to connect the first charge accumulation unit and the second charge accumulation unit in series on a path of light emission current to a light emission unit.
H03K 17/687 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
38.
IMAGING DEVICE, IMAGING CONTROL DEVICE, AND IMAGING SYSTEM
The present invention reduces the cost of a signal cable. An imaging device comprises: a balanced channel transmission unit that transmits image data using a first communication line and a second communication line which constitute a balanced channel during a transfer period in a transfer cycle composed of the transfer period, in which a frame of image data for one screen is repeatedly transferred synchronously with generation of the frame, and a pause period that follows the transfer period; an unbalanced channel reception unit that receives a command transmitted using the second communication line as an unbalanced channel during the pause period; and a control unit that performs image data transmission control for causing the balanced channel transmission unit to transmit the image data during the transfer period and command reception control for causing the unbalanced channel reception unit to receive the command during the pause period.
The present disclosure relates to a light detection device that makes it possible to achieve a supply path for supplying a prescribed voltage with low resistance. This light detection device is provided with: a semiconductor substrate having a photoelectric conversion region for photoelectrically converting incident light; a light shielding film formed on a light incident surface side of the semiconductor substrate; and an electrode pad formed on a side opposite to the light incident surface side of the semiconductor substrate. The light detection device has: a pixel array part having pixels; and a pad region having the electrode pad, wherein the pad region includes a guard ring in which a metal material is embedded in a trench penetrating the semiconductor substrate. The light detection device is configured so that the guard ring extracts, to the light incident surface side of the semiconductor substrate, a prescribed voltage which is supplied to the electrode pad, and so that the prescribed voltage extracted to the light incident surface side of the semiconductor substrate by the guard ring is supplied to the pixels of the pixel array part through the light shielding film. The technology of the present disclosure can be applied to, for example, an electronic apparatus or the like that detects the distance to a subject.
An imaging device with a semiconductor substrate, a photoelectric converter, an electric charge holder, and a first light-blocking section. The semiconductor substrate includes a pixel array section of unit pixels. The first light-blocking section includes a first horizontal light-blocking part and a first vertical light-blocking part that is orthogonal to the first horizontal light-blocking part. The first vertical light-blocking part includes a first row light-blocking part and a first column light-blocking part. The first vertical light-blocking part is provided for each of the unit pixels positioned every other column and in a 45-degree oblique direction. The first horizontal light-blocking part has, in plan view, an end at or in the vicinity of a position connecting one and another of intersections of the first row light-blocking parts and the first column light-blocking parts that are provided for the respective unit pixels positioned every other column and in the 45-degree oblique direction.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
To achieve lower power consumption of an imaging element mounted on an electronic device such as a smartphone. An imaging element of the present technology includes: an analog circuit unit including a pixel that performs photoelectric conversion; a logic circuit unit configured to process a signal read out from the pixel; a body potential generation unit configured to apply a body potential in a direction of lowering a threshold voltage to a well doped to enclose a transistor structure in a transistor forming the logic circuit unit; and a control unit configured to control the body potential for each operation mode designated from an outside.
H04N 25/709 - Circuits de commande de l'alimentation électrique
H04N 25/772 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des convertisseurs A/N, V/T, V/F, I/T ou I/F
H04N 25/78 - Circuits de lecture pour capteurs adressés, p. ex. amplificateurs de sortie ou convertisseurs A/N
An isolation ratio between a plurality of sub-pixels included in a pixel is further improved. An imaging device including a semiconductor substrate including a photoelectric conversion unit provided for each of pixels arranged two-dimensionally and a pixel isolation unit that isolates the photoelectric conversion units from each other, a color filter and an on-chip lens provided for each of the pixels on one surface of the semiconductor substrate, an inter-filter isolation unit provided to include a low refractive index material having a refractive index lower than a refractive index of the color filter between the color filters and isolate the color filter for each of the pixels, and a sub-pixel isolation unit that isolates the photoelectric conversion units of the pixels including a plurality of sub-pixels for each of the sub-pixels.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
43.
ELECTRONIC DEVICE AND MANUFACTURING METHOD FOR ELECTRONIC DEVICE
An electronic device includes a substrate, a first through-hole penetrating the substrate, a capacitive element above the substrate, and a first conductor film. A first portion of the first conductor film traverses the substrate along a side wall of the first through-hole and a second portion of the first conductor film is in contact with the capacitive element.
High-speed and high-performance signals are compared. In one example, a solid-state imaging element includes a comparison circuit, a first switch, a second switch, a third switch, a first capacitor, and a second capacitor. The comparison circuit includes a non-inverting input terminal and an inverting input terminal. The first switch is connected to the inverting input terminal. The second switch is connected to the inverting input terminal and controlled at a timing different from that of the first switch. The third switch is connected between an output terminal of the comparison circuit and the inverting input terminal. One end of the first capacitor is connected to the inverting input terminal via the first switch, and a reference signal is applied to the other end. One end of the second capacitor is connected to the inverting input terminal via the second switch, and a reference signal is applied to the other end.
H04N 25/616 - Traitement du bruit, p. ex. détection, correction, réduction ou élimination du bruit impliquant une fonction d'échantillonnage corrélé, p. ex. l'échantillonnage double corrélé [CDS] ou l'échantillonnage triple
H04N 25/771 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des moyens de stockage autres que la diffusion flottante
H04N 25/772 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des convertisseurs A/N, V/T, V/F, I/T ou I/F
H04N 25/78 - Circuits de lecture pour capteurs adressés, p. ex. amplificateurs de sortie ou convertisseurs A/N
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
45.
IMAGE PROCESSING DEVICE, IMAGE PROCESSING METHOD, AND PROGRAM
An image processing method, and a program capable of easily generating a three-dimensional model including spectral information includes a three-dimensional model generated on the basis of an RGB image group, mapped spectral information of a spectral image group, and a spectral three-dimensional model in which the spectral information has been mapped onto the three-dimensional model is generated which can be applied in techniques for generating a spectral three-dimensional image in which spectral information is superimposed on a three-dimensional model.
A signal processing device according to the present disclosure comprises: an exposure control unit that divides a plurality of pixels for respective one or more colors in an image sensor having the plurality of pixels into a plurality of pixel groups for each of the colors, and exposes the plurality of pixel groups for different exposure durations; an extraction unit that acquires a difference signal between a pixel signal from one pixel group among the plurality of pixel groups and a signal obtained by multiplying a pixel signal from a pixel group different from the one pixel group among the plurality of pixel groups by the reciprocal of an exposure ratio to thereby extract an optical noise component; and a subtraction unit that performs a process for subtracting the optical noise component from pixel signals from the plurality of pixel groups on the basis of the difference signal and the exposure ratio.
H04N 25/60 - Traitement du bruit, p. ex. détection, correction, réduction ou élimination du bruit
H04N 23/12 - Caméras ou modules de caméras comprenant des capteurs d'images électroniquesLeur commande pour générer des signaux d'image à partir de différentes longueurs d'onde avec un seul capteur
47.
IMAGE PROCESSING DEVICE AND IMAGE PROCESSING METHOD
This image processing device comprises an image conversion unit that performs aspect ratio conversion by image expansion on an image to be recognized by an image recognition AI model, which is an AI model for performing image recognition processing, before the image is resized to an input tensor size of the image recognition AI model.
The present disclosure relates to a transmission device, a transmission method, a reception device, and a reception method that enable appropriate selection of a broadcast service. Provided is a transmission device that comprises: a generation unit that generates configuration information necessary for selecting an Lch level; and a transmission unit that transmits a broadcast signal including the generated configuration information. According to the present disclosure, the present invention can be, for example, applied to broadcasting, such as a TLV multiplexing method or TMCC, that uses OFDM frames.
H04N 21/2362 - Génération ou traitement d'informations de service [SI]
H04N 21/61 - Structure physique de réseauTraitement de signal
H04N 21/434 - Désassemblage d'un flux multiplexé, p. ex. démultiplexage de flux audio et vidéo, extraction de données additionnelles d'un flux vidéoRemultiplexage de flux multiplexésExtraction ou traitement de SIDésassemblage d'un flux élémentaire mis en paquets
49.
DISPLAY DEVICE, OPTICAL SYSTEM, AND ELECTRONIC APPARATUS
Provided is a display device in which the chief ray angle (CRA) is controlled. This display device comprises: a plurality of light-emitting elements that are two-dimensionally arranged; and a protective layer that contains an inorganic material and that seals a display surface side. The protective layer has a lens array on a surface opposite to the side of the plurality of light-emitting elements.
H10K 50/858 - Dispositifs pour extraire la lumière des dispositifs comprenant des moyens de réfraction, p. ex. des lentilles
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
H05B 33/14 - Sources lumineuses avec des éléments radiants ayant essentiellement deux dimensions caractérisées par la composition chimique ou physique ou la disposition du matériau électroluminescent
H10K 50/852 - Dispositifs pour extraire la lumière des dispositifs comprenant une structure de cavité résonante, p. ex. une paire de réflecteurs de Bragg
H10K 50/856 - Dispositifs pour extraire la lumière des dispositifs comprenant des moyens réfléchissants
H10K 59/12 - Affichages à OLED à matrice active [AMOLED]
H10K 59/95 - Ensembles de plusieurs dispositifs comprenant au moins un élément organique émetteur de lumière dans lesquels tous les éléments émetteurs de lumière sont organiques, p. ex. ensembles d'affichages à OLED
Provided is a display device capable of suppressing a decrease in light emission luminance.
Provided is a display device capable of suppressing a decrease in light emission luminance.
The display device includes a plurality of inorganic light emitting diodes arranged two-dimensionally and a plurality of organic light emitting diodes arranged two-dimensionally. At least one of the organic light emitting diodes is provided on an upper portion of or above at least one of the inorganic light emitting diodes or on a lower portion of or below at least one of the inorganic light emitting diodes.
To equalize power consumption of each terminal by grasping a power supply state of each terminal, and to achieve power saving of the entire system in a communication system including a plurality of terminals.
To equalize power consumption of each terminal by grasping a power supply state of each terminal, and to achieve power saving of the entire system in a communication system including a plurality of terminals.
A power supply state determination information acquisition unit acquires power supply state determination information for determining the power supply state of a local terminal. A power supply state determination information communication unit performs communication for exchanging the power supply state determination information with another terminal. A representative terminal determination unit determines a representative terminal on the basis of the power supply state determination information of the local terminal and the another terminal. In a case where the local terminal corresponds to the representative terminal, a reference signal reception unit receives a reference signal necessary for synchronization and generates time information. A time information communication unit transmits the time information to the another terminal in a case where the local terminal corresponds to the representative terminal, and receives the time information from the representative terminal in a case where the local terminal does not correspond to the representative terminal.
The present technology provides a solid-state imaging device capable of suppressing reflection of light at an upper portion of a separation wall.
The present technology provides a solid-state imaging device capable of suppressing reflection of light at an upper portion of a separation wall.
The solid-state imaging device according to the present technology includes a pixel that includes: first and second light receiving units that are adjacent to each other and receive light in a same wavelength band; and a separation wall provided between the first and second light receiving units. The first light receiving unit includes: a first photoelectric conversion element; and a first phase imparting structure that is provided on an incident side of the light of the first photoelectric conversion element and imparts a first phase to incident light. The second light receiving unit includes: a second photoelectric conversion element; and a second phase imparting structure that is provided on an incident side of the light of the second photoelectric conversion element and imparts a second phase different from the first phase to incident light.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
53.
INFORMATION PROCESSING APPARATUS AND METHOD, AND PROGRAM
The present technique relates to an information processing apparatus, an information processing method, and a program that enable a contextual relationship of data to be proved even when troubleshooting of equipment has been carried out.
The present technique relates to an information processing apparatus, an information processing method, and a program that enable a contextual relationship of data to be proved even when troubleshooting of equipment has been carried out.
The information processing apparatus is an information processing apparatus that generates output data including object data to be a verification object of a temporal contextual relationship, the information processing apparatus including: a control unit configured to generate the output data including a hash value calculated on the basis of a part of or all of output data that temporally immediately-precedes the output data, the object data, and a plurality of mutually-different types of ID information related to the object data. The present technique can be applied to cameras.
This semiconductor device comprises: a semiconductor chip; a wiring board on which a semiconductor chip is mounted and on the rear surface side of which an external connection terminal for performing electrical connection with the outside is formed, the rear surface being opposite to the front surface on which the semiconductor chip is mounted; and a lid part which is bonded to the semiconductor chip by an adhesive member formed on an outer edge part of the semiconductor chip and covers the semiconductor chip. A part of the adhesive member protrudes outward beyond the outer edge end of the semiconductor chip.
H01L 23/10 - ConteneursScellements caractérisés par le matériau ou par la disposition des scellements entre les parties, p. ex. entre le couvercle et la base ou entre les connexions et les parois du conteneur
55.
INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING SYSTEM AND INFORMATION PROCESSING METHOD
An information processing device according to the present disclosure includes a first processing unit for executing processing by a first network from among the first network, which includes an input layer, and a second network, which includes an output layer, the first and second networks being obtained by splitting a network that processes input image data using an n-pixel × n-line filter (where n is an integer of 2 or more) at an intermediate layer between an N-th layer and an (N+1)-th layer (where N is an integer of 2 or more). The first processing unit causes the first network to perform the processing on the input image in units of n lines, and outputs the result of the processing line by line to the second network.
G06V 10/82 - Dispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant les réseaux neuronaux
Provided is a display device comprising a plurality of light-emitting elements arrayed on a substrate and separated from each other. Each of the light-emitting elements includes lamination layers constituted by a first electrode, a light-emitting unit provided on the first electrode, and a second electrode provided on the light-emitting unit. Second electrodes that are adjacent to each other are electrically connected to each other by a wire extending on the second electrodes. A first auxiliary wire is provided between light-emitting elements that are adjacent to each other such that the first auxiliary wire comes into contact with the aforementioned wire. The first auxiliary wire includes a first conductive layer constituted by a material common to the second electrodes. At least a portion of the first conductive layer is located at the same heights as the lamination layers in a cross section obtained by cutting a light-emitting element in the lamination direction.
H10K 50/824 - Cathodes combinées avec des électrodes auxiliaires
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
H05B 33/14 - Sources lumineuses avec des éléments radiants ayant essentiellement deux dimensions caractérisées par la composition chimique ou physique ou la disposition du matériau électroluminescent
H10K 50/818 - Anodes réfléchissantes, p. ex. ITO combiné à des couches métalliques épaisses
The present disclosure relates to an actuator mechanism and a robot device which make it possible to achieve driving with high responsiveness. The actuator mechanism according to the present disclosure includes: a plurality of shape memory alloy wires, each of which has one end as a fixed end; and a plurality of fitting mechanisms, which are connected to the other ends of the respective shape memory alloy wires and are detachably fitted to an object to be driven. The fitting mechanism is adhered to the object when the shape memory alloy wire is energized, and is detached from the object when the shape memory alloy wire is not energized. The present disclosure can be applied to, for example, an actuator of a robot.
F03G 7/06 - Mécanismes produisant une puissance mécanique, non prévus ailleurs ou utilisant une source d'énergie non prévue ailleurs utilisant la dilatation ou la contraction des corps produites par le chauffage, le refroidissement, l'humidification, le séchage ou par des phénomènes similaires
B25J 19/00 - Accessoires adaptés aux manipulateurs, p. ex. pour contrôler, pour observerDispositifs de sécurité combinés avec les manipulateurs ou spécialement conçus pour être utilisés en association avec ces manipulateurs
B64C 33/02 - AilesMécanismes d'actionnement des ailes
Provided is an electronic device that implements image-capturing with a wide angle of view with a compact housing. An electronic device according to the present disclosure includes: a display unit (2) configured to be deformable; and at least one first imaging unit (3) arranged on an opposite side of a display surface of the display unit (2) and configured to image incident light transmitted through the display unit. The display unit (2) may be foldable. Furthermore, at least a part of the display unit (2) may be bendable. Moreover, in the first imaging unit (3), an optical system used for image-capturing may be switchable in accordance with a shape of the display unit (2).
H04N 5/262 - Circuits de studio, p. ex. pour mélanger, commuter, changer le caractère de l'image, pour d'autres effets spéciaux
H04N 5/77 - Circuits d'interface entre un appareil d'enregistrement et un autre appareil entre un appareil d'enregistrement et une caméra de télévision
A light detection element according to the present disclosure includes a plurality of photoelectric converters, a color splitter layer, and a plurality of condensers. The plurality of photoelectric converters are disposed side by side in a matrix in a semiconductor layer. The color splitter layer is disposed on a light incident side with respect to the plurality of photoelectric converters, and includes a low refractive index layer and a plurality of columnar high refractive index portions. The plurality of condensers are disposed on the light incident side with respect to the color splitter layer, and condenses incident light to the corresponding high refractive index portions.
G02B 27/10 - Systèmes divisant ou combinant des faisceaux
H04N 25/13 - Agencement de matrices de filtres colorés [CFA]Mosaïques de filtres caractérisées par les caractéristiques spectrales des éléments filtrants
H04N 25/76 - Capteurs adressés, p. ex. capteurs MOS ou CMOS
60.
SOLID-STATE IMAGING ELEMENT AND MANUFACTURING METHOD, AND ELECTRONIC DEVICE
The present disclosure relates to a solid-state imaging element, a manufacturing method, and an electronic device that can achieve higher image quality. The solid-state imaging element includes a plurality of pixels, a capacitor provided for each of the pixels and formed in a three-dimensional shape between an upper wiring and a lower wiring of a wiring layer of the pixels, and an isolation unit that electrically isolates capacitors of adjacent pixels from each other. Then, the isolation unit is provided for each of the pixels so as to surround the capacitor, and an interlayer insulating film is provided between the isolation units of the respective pixels. The present technology can be applied to a CMOS image sensor, for example.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H04N 25/771 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des moyens de stockage autres que la diffusion flottante
An imaging element of an embodiment of the present disclosure includes: a semiconductor substrate including a photoelectric converter for each pixel; one or more pixel transistors provided in one surface of the semiconductor substrate; and a first element isolation section and a second element isolation section having different depths from each other that are embedded in the one surface of the semiconductor substrate and define an active region of the one or more pixel transistors, in which a portion of a gate electrode of the one or more pixel transistors is embedded in at least one of the first and second element isolation sections at different depths.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
Provided is a photodetection device capable of suppressing deterioration of a captured image. A photodetection device includes: a semiconductor layer including a plurality of cell regions arranged in a row direction and a column direction in a pixel region, one surface of the semiconductor layer being an element formation surface, and another surface of the semiconductor layer being a light incident surface; and a deflection layer provided at a position facing the light incident surface of the cell region or provided in a portion of the cell region on the light incident surface side. A photoelectric conversion element, a light shielding film extending along a direction perpendicular to a thickness direction of the semiconductor layer, and a charge holding unit located closer to the element formation surface than the light shielding film in a thickness direction of the semiconductor layer are provided in the cell region. The deflection layer includes, for each of the cell regions, a first region having a first refractive index and a second region having a second refractive index higher than the first refractive index at different positions in plan view. The second region is located at a position overlapping the light shielding film in plan view.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
63.
MAGNETORESISTIVE ELEMENT, STORAGE DEVICE, AND ELECTRONIC APPARATUS
A magnetoresistive element according to an embodiment of the present disclosure includes: a laminated body; a storage layer laminated on the laminated body and having a variable magnetization direction; a non-magnetic layer laminated on the storage layer; and a reference layer laminated on the non-magnetic layer and having a fixed magnetization direction, in which the laminated body includes a magnetic layer having a variable magnetization direction, and a non-magnetic metal layer laminated on the magnetic layer.
A light control part comprising: a first base body that has a first surface and a second surface opposite to one another; a meta lens layer that is disposed on a portion of the first surface and controls a light property; and a first positioning pad that is disposed on another portion of the first surface and determines the position of the meta lens layer.
H01S 5/02253 - Découplage de lumière utilisant des lentilles
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H10F 30/225 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes la barrière de potentiel fonctionnant en régime d'avalanche, p. ex. photodiodes à avalanche
A multilayer substrate according to one embodiment of the present technology is provided with a plurality of conductor layers, an interlayer connection part, and one or more ridge parts. The plurality of conductor layers include a pair of waveguide conductor layers which form a pair of main waveguide surfaces facing each other. The interlayer connection part has a pair of post walls which are disposed in a manner facing each other, define a waveguide between the pair of main waveguide surfaces, and is configured from a plurality of conductor posts which individually connect the pair of waveguide conductor layers to each other and which are disposed in rows. The one or more ridge parts have a width narrower than the interval between the pair of post walls, are disposed in a manner protruding from the main waveguide surfaces toward the waveguide, and form ridge waveguide surfaces uniformly extending along the waveguide.
According to one embodiment of the present invention, a display device comprises: a display unit; a flexible substrate electrically connected to the display unit by a wire; and a reinforcing plate supporting the display unit and the flexible substrate.
G09F 9/00 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
H01L 23/29 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par le matériau
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
The disclosure pertains to a grating coupler for coherent lidar, wherein the grating coupler includes: a waveguide that extends along a guidance direction; and pairs of radiating elements that are arranged along the guidance direction at an emission side of the waveguide, wherein each pair includes a left radiating element and a right radiating element that are separated from each other by a gap.
G01S 7/481 - Caractéristiques de structure, p. ex. agencements d'éléments optiques
G01S 17/08 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement
G02B 6/293 - Moyens de couplage optique ayant des bus de données, c.-à-d. plusieurs guides d'ondes interconnectés et assurant un système bidirectionnel par nature en mélangeant et divisant les signaux avec des moyens de sélection de la longueur d'onde
G02B 6/34 - Moyens de couplage optique utilisant des prismes ou des réseaux
G02B 27/09 - Mise en forme du faisceau, p. ex. changement de la section transversale, non prévue ailleurs
A light detection element including: a photoelectric conversion section that is in a semiconductor substrate and generates a charge corresponding to incident light; a first accumulation section that accumulates the generate charge; an amplification transistor that generates an input signal corresponding to an amount of the accumulated charge; a second accumulation section to which a saturated charge is transferred from the photoelectric conversion section via the first accumulation section; a conversion efficiency switching transistor that transfers the saturated charge to the second accumulation section to switch a conversion efficiency; a reset transistor that resets the charge accumulated in the first accumulation section and the saturated charge accumulated in the second accumulation section; and a differential input circuit that compares the input signal generated by the amplification transistor with a reference signal and outputs a comparison result, in which the second accumulation section includes a MIM capacitor having a three-dimensional structure.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H04N 25/59 - Commande de la gamme dynamique en commandant la quantité de charge stockable dans le pixel, p. ex. en modifiant le rapport de conversion de charge de la capacité du nœud flottant
H04N 25/771 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des moyens de stockage autres que la diffusion flottante
H04N 25/772 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des convertisseurs A/N, V/T, V/F, I/T ou I/F
H04N 25/79 - Agencements de circuits répartis entre des substrats, des puces ou des cartes de circuits différents ou multiples, p. ex. des capteurs d'images empilés
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
69.
WIRELESS COMMUNICATION TERMINAL, BASE STATION, AND WIRELESS COMMUNICATION SYSTEM
To reduce power consumption of a wireless communication terminal at the time of positioning processing. A wireless communication terminal includes: a wireless communication unit that performs wireless communication; a positioning processing unit that performs positioning processing on the basis of reception data received via the wireless communication unit; and a control unit that controls power consumption related to the positioning processing on the basis of control information regarding the positioning processing acquired via the wireless communication unit. The wireless communication terminal further includes an amplifier that amplifies a signal received via an antenna, in which the wireless communication unit transmits position information obtained by the positioning processing unit, and the control unit controls an operation of the amplifier on the basis of control information regarding the positioning processing obtained via the wireless communication unit.
To suppress flowing out of an adhesive to the outside of a prescribed region in a semiconductor package in which a substrate is bonded to a support by the adhesive. A semiconductor package includes a substrate, a semiconductor chip, a support, and a first adhesive. In this semiconductor package, the semiconductor chip is placed on a substrate flat surface of the substrate and electrically connected to the substrate. Further, in the semiconductor package, a part of the first adhesive flows into a gap between the substrate flat surface and the semiconductor chip, and adheres the substrate to the support.
The present disclosure relates to a light detection device that makes it possible to achieve even greater improvements in performance. SPAD pixels include: a cathode contact which is provided at a center part of a surface of a semiconductor substrate and is directly connected to an electrode for supplying a cathode potential to a multiplication region for multiplying charges generated in a photoelectric conversion part; and an anode contact which is provided at an outer peripheral part of the surface of the semiconductor substrate within a certain range from the surface to a predetermined depth, and is connected to a light shielding metal for supplying an anode potential to the multiplication region via a conductor. The anode contact and the conductor are connected via a connection surface along at least the depth direction of the semiconductor substrate. The present technology can be applied to, for example, a light detection device provided with SPAD pixels.
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
H10F 30/225 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes la barrière de potentiel fonctionnant en régime d'avalanche, p. ex. photodiodes à avalanche
This information processing device comprises: an inference unit that uses an AI model to perform inference processing on a captured image; a score calculation unit that calculates an inference uncertainty score on the basis of inference result information obtained by the inference processing; a determination processing unit that determines, on the basis of the uncertainty score, whether drift has occurred; and a transmission processing unit that, if the determination processing unit determines that drift has occurred, performs processing for transmitting the captured image, which is subjected to inference, to an external device.
A multilayer substrate according to an embodiment of the present technology is provided with a plurality of conductor layers and an interlayer connection section. The plurality of conductor layers has a line conductor layer having a coplanar line and a pair of adjacent conductor layers neighboring the line conductor layer. The interlayer connection section has a plurality of columnar conductors connecting the plurality of conductor layers to each other. The multilayer substrate is such that, in a frequency band used by the coplanar line, a path of a return current is configured such that transmission loss due to the return current flowing through the columnar conductors between the coplanar line and the pair of adjacent conductor layers is prevented.
An imaging device according to one embodiment of the present disclosure includes a first filter having a first refractive index for entering light, a first photoelectric conversion section that performs photoelectric conversion on light transmitted through the first filter, a second filter that has a second refractive index lower than the first refractive index for entering light and is adjacent to the first filter, a second photoelectric conversion section that performs photoelectric conversion on light transmitted through the second filter, a first medium that is provided on an opposite side of the first photoelectric conversion section as viewed from the first filter and has a third refractive index for entering light, and a second medium that is provided on an opposite side of the second photoelectric conversion section as viewed from the second filter and has a fourth refractive index higher than the third refractive index for entering light.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
76.
SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, AND ELECTRONIC APPARATUS
A semiconductor device includes a multi-gate transistor, a first terminal, and a second terminal. The multi-gate transistor includes field effect transistors that each have a pair of main electrodes and a gate electrode disposed between the pair of main electrodes and that are electrically coupled in series while sharing the main electrodes. The first terminal is electrically coupled to one of the main electrodes of the field effect transistor at one end of the series-coupled field effect transistors of the multi-gate transistor, and receives or outputs a signal. The second terminal is electrically coupled to another of the main electrodes of the field effect transistor at another end of the series-coupled field effect transistors of the multi-gate transistor and receives supply of a fixed potential. The gate electrode of at least one of the field effect transistors of the multi-gate transistor is electrically coupled to the other main electrode of the same field effect transistor.
H10D 89/60 - Dispositifs intégrés comprenant des dispositions pour la protection électrique ou thermique, p. ex. circuits de protection contre les décharges électrostatiques [ESD].
H02H 9/00 - Circuits de protection de sécurité pour limiter l'excès de courant ou de tension sans déconnexion
H02H 9/04 - Circuits de protection de sécurité pour limiter l'excès de courant ou de tension sans déconnexion sensibles à un excès de tension
H10D 30/47 - Transistors FET ayant des canaux à gaz de porteurs de charge de dimension nulle [0D], à une dimension [1D] ou à deux dimensions [2D] ayant des canaux à gaz de porteurs de charge à deux dimensions, p. ex. transistors FET à nanoruban ou transistors à haute mobilité électronique [HEMT]
Provided is a light emitting device capable of suppressing reflection of near infrared rays. The light emitting device includes a near-infrared absorption layer. The near-infrared absorption layer is provided in the effective pixel region and a peripheral region located around the effective pixel region. The near-infrared absorption layer has a pattern portion in the effective pixel region.
H10K 59/38 - Dispositifs spécialement adaptés à l'émission de lumière multicolore comprenant des filtres de couleur ou des supports changeant de couleur [CCM]
A photodetection device according to an embodiment of the present disclosure includes: a semiconductor layer including a plurality of photoelectric conversion sections that performs photoelectric conversion on light; a pad that is provided on a first surface side of the semiconductor layer; a via that penetrates the semiconductor layer and is electrically coupled to the pad; and a first trench that is provided in such a manner that the first trench penetrates the semiconductor layer around the via to surround the via. The first trench is provided in such a manner that the first trenches form a lattice shape around the via in plan view.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
A light detection device according to an embodiment of the present disclosure comprises: a photoelectric conversion element; a first transistor that is capable of generating a first signal based on a charge converted by the photoelectric conversion element; and a second transistor that is capable of outputting the first signal. The first transistor has a first portion that is part of a semiconductor layer, and a first gate electrode that is provided so as to sandwich the first portion. The second transistor has a second portion that is another part of the semiconductor layer, and a second gate electrode that is provided so as to sandwich the second portion. The length of the second portion in the thickness direction of the semiconductor layer is different from the length of the first portion in the thickness direction of the semiconductor layer.
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
H10D 84/83 - Dispositifs intégrés formés dans ou sur des substrats semi-conducteurs qui comprennent uniquement des couches semi-conductrices, p. ex. sur des plaquettes de Si ou sur des plaquettes de GaAs-sur-Si caractérisés par l'intégration d'au moins un composant couvert par les groupes ou , p. ex. l'intégration de transistors IGFET de composants à effet de champ uniquement de transistors FET à grille isolée [IGFET] uniquement
A light-emitting device according to an embodiment of the present disclosure has an insulation layer, an insulating side wall, a lower electrode, an organic layer, and an upper electrode. The side wall is erected so as to enclose the light-emitting region on the insulation layer surface when observed in plan view. The lower electrode is disposed such as to cover from the insulation layer surface enclosed by the side wall to a portion of the side wall inner surface. The organic layer is disposed such as to cover the lower electrode surface and the side wall inner surface not covered by the lower electrode. The upper electrode is disposed such as to cover the organic layer inner surface.
Provided is a semiconductor package in which a semiconductor chip is connected by wire bonding, wherein problems at the time of manufacturing and mounting are solved. The semiconductor package is provided with a semiconductor chip, a substrate, a rib material, a transparent member, and a frame material. The substrate is connected to a light-receiving surface of the semiconductor chip by means of a bonding wire. The rib material is formed along the outer circumference of the light-receiving surface of the semiconductor chip. The frame material covers a lateral surface of the transparent member and/or a section of a rear surface that is a surface which is one of the two surfaces of the transparent member and which does not correspond to the light-receiving surface. A sealing resin seals lateral surfaces of the semiconductor chip.
Provided is a sensor device comprising: a plurality of sensor elements that each change from a first state to a second state according to temperature and the duration of exposure to the temperature; and a magnetic field application unit that applies a magnetic field in a prescribed direction to the plurality of sensor elements. The plurality of sensor elements each include a magnetic tunnel junction element having an energy barrier between the first state and the second state. The magnetic field application unit applies the magnetic field to the plurality of sensor elements, thereby increasing the asymmetry of each of the sensor elements between the potential in the first state and the potential in the second state with the energy barrier interposed therebetween.
G01K 7/36 - Mesure de la température basée sur l'utilisation d'éléments électriques ou magnétiques directement sensibles à la chaleur utilisant des éléments magnétiques, p. ex. des aimants, des bobines
H10B 61/00 - Dispositifs de mémoire magnétique, p. ex. dispositifs RAM magnéto-résistifs [MRAM]
A magnetic field sensor according to the present invention comprises: a first element having a resistance value that changes in response to a magnetic field; a first readout circuit that outputs a first voltage corresponding to the resistance value of the first element; a second element having a resistance value that changes in response to a magnetic field; a second readout circuit that outputs a second voltage corresponding to the resistance value of the second element; wiring provided for the first element and the second element; and a control circuit that controls the current flowing through the wiring on the basis of the first voltage. The ratio of the amount of change in the first voltage with respect to the amount of change in the magnetic field and the ratio of the amount of change in the second voltage with respect to the amount of change in the magnetic field are different from each other.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/02 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques
G01R 33/025 - Compensation de champs de dispersion
[Problem] To achieve an increase in frame rate while expanding the distance measurement range and also improving the distance measurement accuracy. [Solution] An optical detection device comprising: a photoelectric conversion element that detects incident photons; a first measurement unit that measures a point in time at which the photoelectric conversion element detects photons; and a second measurement unit that, in parallel with the first measurement unit, measures the point in time with a lower time resolution than the first measurement unit.
The present invention reduces damage to a memory cell caused by writing. This memory device includes a memory cell block and a write circuit. The memory cell block is formed by a plurality of memory cells, each of which includes a variable resistance element and a cell transistor connected in series, and in which either a first logic state or a second logic state is written. The write circuit performs writing simultaneously to each memory cell in the memory cell block, and performs writing based on write data and inverted writing in which data obtained by inverting the logic state with respect to the write data is written to the memory cell.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
A photodetector of an embodiment of the disclosure includes: a first semiconductor substrate having a first surface and a second surface and including a pixel array section; a light-receiving section inside the first semiconductor substrate for each of the pixels that generates carriers corresponding to a received light amount; a multiplication section; an insulating layer stacked on the first surface and having an opening; a polysilicon film with the insulating layer interposed between the first surface and the polysilicon film along at least a border of the pixels that is electrically coupled to the light-receiving section through the opening; a first wiring along an outer shape of each of the pixels on the side of the first surface; and a first connection wiring along the outer shape of each of the pixels on the side of the first surface that electrically couples the polysilicon film and the first wiring.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
G01S 7/481 - Caractéristiques de structure, p. ex. agencements d'éléments optiques
G01S 17/08 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement
87.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device is a semiconductor device including a plurality of pixels each emitting light, the semiconductor device includes a first semiconductor substrate including a transistor of a pixel circuit configured to control light emission of each of the plurality of pixels, a front surface wiring layer provided on a front surface of the first semiconductor substrate, a light emitting element layer provided on a side opposite to the first semiconductor substrate with the front surface wiring layer interposed therebetween, a back surface wiring layer provided on a back surface of the first semiconductor substrate, a second semiconductor substrate including a transistor of a drive circuit configured to drive the pixel circuit, a front surface wiring layer provided on a front surface of the second semiconductor substrate and bonded to the back surface wiring layer of the first semiconductor substrate so as to have electrical contact with the back surface wiring layer of the first semiconductor substrate, and a through-substrate via configured to penetrate the first semiconductor substrate and connect the front surface wiring layer and the back surface wiring layer of the first semiconductor substrate.
H10K 59/131 - Interconnexions, p. ex. lignes de câblage ou bornes
H10K 59/12 - Affichages à OLED à matrice active [AMOLED]
H10K 59/121 - Affichages à OLED à matrice active [AMOLED] caractérisés par la géométrie ou la disposition des éléments de pixel
H10K 59/127 - Affichages à OLED à matrice active [AMOLED] comprenant deux substrats, p. ex. un affichage comprenant une matrice OLED et un circuit de commande de TFT sur des substrats différents
88.
INFORMATION PROCESSING DEVICE AND INFORMATION PROCESSING METHOD
An information processing device for processing spot time-of-flight data acquired by a spot time-of-flight device in a time-of-flight measurement, the spot time-of-flight device including a spot illuminator configured to illuminate a scene with spotted light and an image sensor configured to detect spotted light reflected from the scene, the information processing device comprising circuitry configured to: obtain first and second spot time-of-flight data acquired using a first and second measurement configuration of the spot time-of-flight device, respectively, wherein the first measurement configuration differs from the second measurement configuration; detect first spots associated with first pixel positions in the first spot time-of-flight data; detect second spots associated with second pixel positions in the second spot time-of-flight data; and determine spot pairs between the first spots and the second spots, wherein the spot pairs are determined based on the first and second pixel positions.
To make it possible to downsize a pixel as compared with a conventional pixel, and to perform on/off switching control for each of functions.
To make it possible to downsize a pixel as compared with a conventional pixel, and to perform on/off switching control for each of functions.
A photodetection element includes: a photoelectric conversion element that accumulates charges according to an amount of incident light; and a pixel circuit that outputs a pixel signal according to the charges accumulated in the photoelectric conversion element, in which the pixel circuit includes: at least one current path; and at least two current cutoff switching units that switch whether or not to cut off the current path.
H04N 25/47 - Capteurs d'images avec sortie d'adresse de pixelCapteurs d'images commandés par événementSélection des pixels à lire en fonction des données d'image
H04N 25/772 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des convertisseurs A/N, V/T, V/F, I/T ou I/F
90.
SCHOTTKY BARRIER JUNCTION TYPE HIGH ELECTRON MOBILITY TRANSISTOR, SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, AND ELECTRONIC APPARATUS
This Schottky barrier junction type high electron mobility transistor includes: a compound semiconductor layer having a barrier layer; an insulator disposed on the compound semiconductor layer and having a gate through-hole; a gate electrode embedded in the gate through-hole; and a carrier capture region disposed at least at one end of the gate electrode in the gate length direction. A trap density of carriers captured at an interface between the carrier capture region and the compound semiconductor layer is higher than a trap density of carriers captured at an interface between the compound semiconductor layer and the insulator.
H10D 30/47 - Transistors FET ayant des canaux à gaz de porteurs de charge de dimension nulle [0D], à une dimension [1D] ou à deux dimensions [2D] ayant des canaux à gaz de porteurs de charge à deux dimensions, p. ex. transistors FET à nanoruban ou transistors à haute mobilité électronique [HEMT]
[Problem] To allow suppression of signal saturation. [Solution] A light detection device is provided with: a pixel array unit having a plurality of pixels that output a detection signal in response to detection of light; a light-emitting unit having a plurality of light-emitting element portions that irradiate a detection target with light in correspondence to the plurality of pixels; a measurement unit that measures, for each of the plurality of pixels, the number of times the detection signal has been output while a measurement period from a measurement start time point to a measurement end time point is repeated a predetermined number of times; and a control unit that controls a light detection unit, the light-emitting unit, and the measurement unit. The control unit causes the number of times to be measured in a first period, and controls, in a second period, at least any of a light emission intensity, the number of light emissions, and the length of the second period for each of the plurality of light-emitting element portions on the basis of the number of times for each of the plurality of pixels in the first period.
A photodetector according to an embodiment of the present disclosure comprises: a photoelectric conversion unit in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked in the stated order; a control circuit unit that acquires data and determines an imaging mode; and a voltage switching circuit unit that switches the voltage difference between the first electrode and the second electrode in accordance with the imaging mode determined by the control circuit unit.
The present technology relates to a semiconductor element and an electronic device with which it is possible to stabilize circuit operation without increasing the circuit area in a substrate in which a second-conductivity type semiconductor region is formed between a plurality of first-conductivity type semiconductor regions arranged side by side in a planar direction. A plurality of N-wells arranged in a planar direction, P-wells formed between the N-wells, and an FTI for separating the N-wells and the P-wells are formed on a substrate of a photo detection element. A conduction part for electrically connecting the N-wells to each other is formed in the P-wells. The present technology can be applied to, for example, a photo detection element having layered therein: a substrate in which pixel sensor units having SPADs as light-receiving elements are two-dimensionally arranged in a matrix in the row direction and the column direction; a substrate having a readout circuit; and a substrate having a signal processing circuit.
The present technology relates to a solid-state imaging device and an electronic apparatus that enable simultaneous acquisition of a signal for generating a high dynamic range image and a signal for detecting a phase difference. The solid-state imaging device includes a plurality of pixel sets each including color filters of the same color, for a plurality of colors, each pixel set including a plurality of pixels. Each pixel includes a plurality of photodiodes PD. The present technology can be applied, for example, to a solid-state imaging device that generates a high dynamic range image and detects a phase difference, and the like.
H04N 25/13 - Agencement de matrices de filtres colorés [CFA]Mosaïques de filtres caractérisées par les caractéristiques spectrales des éléments filtrants
H04N 25/533 - Commande du temps d'intégration en utilisant des temps d'intégration différents pour les différentes régions du capteur
H04N 25/589 - Commande de la gamme dynamique impliquant plusieurs expositions acquises de manière séquentielle, p. ex. en utilisant la combinaison de champs d'image pairs et impairs avec des temps d'intégration différents, p. ex. des expositions courtes et longues
H04N 25/704 - Pixels spécialement adaptés à la mise au point, p. ex. des ensembles de pixels à différence de phase
95.
SEMICONDUCTOR DEVICE, ELECTRONIC APPARATUS, AND SEMICONDUCTOR DE-VICE MANUFACTURING METHOD
A semiconductor device according to one aspect of the present disclosure includes a semiconductor substrate having a first insulating layer and a plurality of first terminals provided on the first insulating layer, and a semiconductor element laminated on the semiconductor substrate and having a second insulating layer and a plurality of second terminals provided on the second insulating layer and connected to the plurality of first terminals, respectively. The first insulating layer or the second insulating layer includes a third insulating layer formed of a material different from a material of the first insulating layer and bonding the semiconductor substrate and the semiconductor element.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
96.
OPTICAL ELEMENT, PHOTODETECTION DEVICE, AND ELECTRONIC APPARATUS
An optical element according to an embodiment of the present disclosure comprises: a substrate; and an optical layer that has a plurality of first structures and is provided in a manner of being layered on the substrate. The optical layer has a first region and a second region. The center position of the first region is different from the center position of the second region. The optical layer can condense first polarized light incident on the first region, and can condense second polarized light which is different from the first polarized light and is incident on the second region.
The present technology pertains to a measurement device, a measurement method, a program, and an information processing system that make it possible to improve the measurement accuracy of a sensor. A measurement device according to the present technology comprises: a contact unit that irradiates an object to be measured with electromagnetic waves for measuring primary information used for calculating biological information of the object to be measured; and a signal processing unit that measures the primary information by using the contact unit. The signal processing unit determines reliability of a measurement result of the primary information using the contact unit, and determines the measurement result of the primary information to be output on the basis of a determination result of the reliability. The present technology can be applied, for example, to a smartwatch that measures biological information of a wearer.
A61B 5/0507 - Détection, mesure ou enregistrement pour établir un diagnostic au moyen de courants électriques ou de champs magnétiquesMesure utilisant des micro-ondes ou des ondes radio utilisant des micro-ondes ou des ondes térahertz
A61B 5/00 - Mesure servant à établir un diagnostic Identification des individus
A61B 5/145 - Mesure des caractéristiques du sang in vivo, p. ex. de la concentration des gaz dans le sang ou de la valeur du pH du sang
A61B 5/02 - Détection, mesure ou enregistrement en vue de l'évaluation du système cardio-vasculaire, p. ex. mesure du pouls, du rythme cardiaque, de la pression sanguine ou du débit sanguin
98.
INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND INFORMATION PROCESSING PROGRAM
This information processing device comprises: an acquisition unit that acquires echoes, which are reflected light due to reflection of laser light emitted from an irradiation device by an object; a determination unit that determines, on the basis of the signal intensity of the acquired echoes, whether or not to use, among the echoes, a multi-echo due to two or more round-trip reflections between the irradiation device and the object to generate an image for detecting the object; and a generation unit that generates the image on the basis of the acquired echoes and the result of the determination.
Provided is a light receiving element capable of enhancing accuracy of measurement of color mixing components contained in output signals of light shielding pixels located around a light receiving pixel. A peripheral pixel region has a specific pixel group including a light receiving pixel and light shielding pixels surrounding the light receiving pixel. A first conductivity type region corresponding to the light receiving pixel and the light shielding pixels of the specific pixel group is made lower in concentration of a first conductivity type impurity than a first conductivity type region corresponding to an effective pixel located in an effective pixel region. Since the concentration of the first conductivity type impurity of the specific pixel group (the light receiving pixel and the light shielding pixels) is low, it is possible to weaken a pn junction strength and suppress dark current in the light receiving pixel and the light shielding pixels. It is therefore possible to reduce noise contained in the output signals of the light shielding pixels and enhance the accuracy of measurement of the color mixing components included in the output signals of the light shielding pixels.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
A photodetector according to one embodiment of the present disclosure includes: a semiconductor substrate having a first surface and a second surface opposed to each other, and including a plurality of pixels and a photoelectric converter, the plurality of pixels arranged in a matrix, and the photoelectric converter that is formed for each of the pixels to be embedded in the semiconductor substrate, and generates an electric charge corresponding to an amount of received light by photoelectric conversion; a microlens disposed on side of the first surface to extend over adjacent pixels of the plurality of pixels; and a plurality of scatterers having different indices, the plurality of scatterers stacked in a collection optical path of the microlens.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
H04N 25/767 - Lignes de lecture horizontales, multiplexeurs ou registres
H04N 25/78 - Circuits de lecture pour capteurs adressés, p. ex. amplificateurs de sortie ou convertisseurs A/N
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
