Apparatus for processing a wafer, comprising: a support for supporting a wafer; a first dispensing nozzle connected to a source of a liquid via a first flow path; a second dispensing nozzle connected to the source of the liquid via a second flow path; a first valve in the first flow path; and a second valve in the second flow path; wherein the first dispensing nozzle and the second dispensing nozzle are configured to be positioned over a surface of a wafer supported by the support, for dispensing the liquid onto the surface of the wafer, with a distance between the first dispensing nozzle and the second dispensing nozzle of 65 mm or more.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Apparatus for processing a wafer-shaped article, the apparatus comprising a support configured to support the wafer-shaped article during a processing operation to be performed on the wafer-shaped article; wherein: the support comprises a support body and a plurality of gripping pin assemblies adapted and positioned relative to the support body for gripping the wafer-shaped article, wherein the gripping pin assemblies are rotatable between a gripping configuration in which the gripping pin assemblies are arranged to grip the wafer-shaped article, and a non-gripping configuration in which the gripping pin assemblies are not arranged to grip the wafer-shaped article; and the apparatus comprises a detector configured to directly or indirectly detect a configuration of the gripping pin assemblies.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
A device for holding a wafer-shaped article, the device having a device body comprising: a surface configured to face a wafer-shaped article supported by the device, the surface having a central recessed portion; first gas nozzles having outlets in the surface outside the central recessed portion; and second gas nozzles having outlets in the surface inside the central recessed portion.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
An apparatus for dispensing a liquid comprising: a supply flow path; a pressurised liquid source arranged to supply pressurised liquid to the supply flow path; a junction downstream of the pressurised liquid source, wherein at the junction the supply flow path is branched into a dispense flow path and a return or drain flow path; and a valve or pump in the return or drain flow path downstream of the junction.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Device for conveying a wafer-shaped article, comprising: a support having a support surface; one or more gas channels in the support having one or more outlets in the support surface; and one or more grooves in the support surface for receiving at least part of an end effector for supporting a wafer-shaped article.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
6.
APPARATUS AND METHOD WITH QUARTZ CRYSTAL MICROBALANCE AND FLOW CELL
An apparatus comprising: a quartz crystal microbalance comprising a quartz crystal resonator having a coating; and a flow cell arranged to flow a liquid over the coating.
G01N 29/036 - Analysing fluids by measuring frequency or resonance of acoustic waves
G01N 29/22 - Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic wavesVisualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object Details
7.
GAS MIXTURE INCLUDING HYDROGEN FLUORIDE, ALCOHOL AND AN ADDITIVE FOR PREVENTING STICTION OF AND/OR REPAIRING HIGH ASPECT RATIO STRUCTURES
A gas mixture for treating a substrate in a substrate processing system includes hydrogen fluoride gas, a vapor of an alcohol, an additive consisting of a base, and a carrier gas. The gas mixture can be used to treat high aspect ratio (HAR) structures arranged on a surface of a substrate. A surface of the substrate may be spin rinsed using a first rinsing liquid. The first rinsing liquid is spun off from the surface of the substrate. The gas mixture is directed onto the surface of the substrate after the first rinsing liquid is dispensed.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Apparatus for processing wafer-shaped articles, the apparatus comprising: a support configured to support a wafer-shaped article; a heating assembly comprising an array of light-emitting heating elements configured to heat a wafer-shaped article supported by the support; and a gas supply mechanism configured to supply to the array of light-emitting heating elements: a first gas having an oxygen content of less than 1% by volume; and a second gas having an oxygen content that is at least 2% by volume higher than the first gas.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
An apparatus for processing a wafer-shaped article, the apparatus comprising: a support for supporting the wafer-shaped article; and a liquid dispenser for dispensing a processing liquid onto a surface of the wafer-shaped article supported by the support; wherein the liquid dispenser comprises a nozzle assembly, the nozzle assembly comprising: an inlet portion; a dispensing nozzle; and a static throttle between the inlet portion and the dispensing nozzle, the static throttle comprising a plurality of flow passages through which the processing liquid can flow from the inlet portion to the dispensing nozzle.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A system for processing wafer-shaped articles, the system comprising: three or more processing stations; and a robotic arm comprising a first set of end effectors including three or more end effectors; wherein the robotic arm is configured to pick up, from a storage unit configured to store a plurality of wafer-shaped articles, a respective wafer-shaped article with each of the three or more end effectors, and load one of the respective wafer-shaped articles into each of the three or more processing stations.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
An apparatus for processing a wafer, the apparatus comprising: a rotatable chuck for receiving and rotating a wafer; a heating device arranged to heat a wafer received by the rotatable chuck; a plate that is transparent to radiation emitted by the heating device; and a plate holder that holds an outer periphery of the plate, so as to mount the plate in the plate holder; wherein the plate holder is mountable in the apparatus to position the plate between the heating device and a wafer when the wafer is received by the rotatable chuck.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Apparatus for processing a wafer-shaped article, the apparatus comprising: a rotary chuck configured to receive a wafer-shaped article, wherein the rotary chuck comprises a plurality of contact elements, each of which is movable between a gripping position where the contact element is configured to contact a radially outer edge of the wafer-shaped article and a non-gripping position; and a non-rotating plate configured to be on an opposite side of the wafer-shaped article to the rotary chuck when the wafer-shaped article is received by the rotary chuck, wherein the non-rotating plate comprises a gas supply arrangement that is configured to supply gas to support the wafer-shaped article according to the Bernoulli principle.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Apparatus for processing a wafer-shaped article, the apparatus comprising a support configured to support the wafer-shaped article during a processing operation; wherein: the support comprises a support body and a plurality of gripping pin assemblies adapted and positioned relative to the support body for gripping the wafer-shaped article, wherein each of the gripping pin assemblies is rotatable relative to the support body between a gripping configuration in which the gripping pin assemblies grip the wafer-shaped article, and a non-gripping configuration in which the gripping pin assemblies do not grip the wafer-shaped article; each of the gripping pin assemblies protrudes from a respective hole in the support body; and a sealing member is positioned between at least one of the gripping pin assemblies and the respective hole, the sealing member being configured to restrict infiltration of a processing liquid used in the processing operation into the hole.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A device for holding a wafer-shaped article, the device having a device body comprising : a surface configured to face a wafer-shaped article supported by the device, the surface having a central recessed portion; first gas nozzles having outlets in the surface outside the central recessed portion; and second gas nozzles having outlets in the surface inside the central recessed portion.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
15.
APPARATUS FOR PROCESSING A WAFER, AND METHOD OF CONTROLLING SUCH AN APPARATUS
An apparatus for processing a wafer comprises: a rotatable chuck adapted to receive a wafer; a heating assembly comprising an array of heating elements arranged to heat a wafer received by the rotatable chuck; an image sensor arranged to detect electromagnetic radiation from a surface of the wafer; and a controller configured to control supply of power to the array of heating elements based on a measurement output of the image sensor.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Apparatus for processing a wafer-shaped article, the apparatus comprising a support configured to support the wafer-shaped article during a processing operation to be performed on the wafer-shaped article; wherein: the support comprises a support body and a plurality of gripping pin assemblies adapted and positioned relative to the support body for gripping the wafer-shaped article, wherein the gripping pin assemblies are rotatable between a gripping configuration in which the gripping pin assemblies are arranged to grip the wafer-shaped article, and a non-gripping configuration in which the gripping pin assemblies are not arranged to grip the wafer-shaped article; and the apparatus comprises a detector configured to directly or indirectly detect a configuration of the gripping pin assemblies.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
An apparatus for dispensing a liquid comprising: a supply flow path; a pressurised liquid source arranged to supply pressurised liquid to the supply flow path; a junction downstream of the pressurised liquid source, wherein at the junction the supply flow path is branched into a dispense flow path and a return or drain flow path; and a valve or pump in the return or drain flow path downstream of the junction.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A61F 13/15 - Absorbent pads, e.g. sanitary towels, swabs or tampons for external or internal application to the bodySupporting or fastening means thereforTampon applicators
B05C 9/12 - Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by groups , or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation being performed after the application
B05C 11/10 - Storage, supply or control of liquid or other fluent materialRecovery of excess liquid or other fluent material
B08B 3/00 - Cleaning by methods involving the use or presence of liquid or steam
H01J 11/18 - AC-PDPs with at least one main electrode being out of contact with the plasma containing a plurality of independent closed structures for containing the gas, e.g. plasma tube array [PTA] display panels
An apparatus for processing a wafer-shaped article, the apparatus comprising: a support for supporting the wafer- shaped article; and a liquid dispenser for dispensing a processing liquid onto a surface of the wafer-shaped article supported by the support; wherein the liquid dispenser comprises a nozzle assembly, the nozzle assembly comprising: an inlet portion; a dispensing nozzle; and a static throttle between the inlet portion and the dispensing nozzle, the static throttle comprising a plurality of flow passages through which the processing liquid can flow from the inlet portion to the dispensing nozzle.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Apparatus for processing wafer-shaped articles, the apparatus comprising: a support configured to support a wafer-shaped article; a heating assembly comprising an array of light-emitting heating elements configured to heat a wafer-shaped article supported by the support; and a gas supply mechanism configured to supply to the array of light-emitting heating elements: a first gas having an oxygen content of less than 1% by volume; and a second gas having an oxygen content that is at least 2% by volume higher than the first gas.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
20.
Apparatus for processing a wafer, and method of controlling such an apparatus
An apparatus for processing a wafer comprises: a rotatable chuck adapted to receive a wafer; a heating assembly comprising an array of light-emitting heating elements arranged to illuminate a wafer received by the rotatable chuck to heat the wafer; and one or more light sensors arranged to detect light emitted by the array of light-emitting heating elements.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Apparatus for processing a wafer-shaped article, the apparatus comprising a support configured to support the wafer-shaped article during a processing operation; wherein: the support comprises a support body and a plurality of gripping pin assemblies adapted and positioned relative to the support body for gripping the wafer-shaped article, wherein each of the gripping pin assemblies is rotatable relative to the support body between a gripping configuration in which the gripping pin assemblies grip the wafer-shaped article, and a non- gripping configuration in which the gripping pin assemblies do not grip the wafer-shaped article; each of the gripping pin assemblies protrudes from a respective hole in the support body; and a sealing member is positioned between at least one of the gripping pin assemblies and the respective hole, the sealing member being configured to restrict infiltration of a processing liquid used in the processing operation into the hole.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
22.
Gas mixture including hydrogen fluoride, alcohol and an additive for preventing stiction of and/or repairing high aspect ratio structures
A gas mixture for treating a substrate in a substrate processing system includes hydrogen fluoride gas, a vapor of an alcohol, an additive consisting of a base, and a carrier gas. The gas mixture can be used to treat high aspect ratio (HAR) structures arranged on a surface of a substrate. A surface of the substrate may be spin rinsed using a first rinsing liquid. The first rinsing liquid is spun off from the surface of the substrate. The gas mixture is directed onto the surface of the substrate after the first rinsing liquid is dispensed.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
23.
Vapor delivery head for preventing stiction of high aspect ratio structures and/or repairing high aspect ratio structures
A vapor delivery head for wet treatment of a substrate includes a body including an upper surface, a lower surface, an upper plenum and a lower plenum. A first bore is arranged on the upper surface of the body and fluidly connected to the upper plenum to supply heated fluid. A second bore is arranged on the upper surface of the body and connected to the upper plenum to remove heated fluid. A third bore is arranged on the upper surface of the body and connected to the lower plenum to receive a gas mixture. A plurality of through holes through the lower surface of the body are in fluid communication with the lower plenum.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
The present invention relates to a method for treating the surface of a wafer with multiple liquids, comprising rotating the surface of the wafer and discharging different liquid streams onto the rotating surface in a sequence from separate outlets, wherein the discharge of liquid streams which are contiguous in the sequence overlaps during a transition phase, and wherein during the transition phase the liquid streams merge after exiting said outlets to form a merged liquid stream before impacting the rotating surface. The invention also provides a liquid dispensing device incorporating a housing holding two or more liquid delivery tubes, wherein the tubes' outlets are inwardly angled towards one another, such that in use liquid streams delivered from the outlets of the two or more liquid delivery tubes merge to form a merged liquid stream.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
An apparatus for processing a wafer, the apparatus comprising: a rotatable chuck for receiving and rotating a wafer; a heating device arranged to heat a wafer received by the rotatable chuck; a plate that is transparent to radiation emitted by the heating device; and a plate holder that holds an outer periphery of the plate, so as to mount the plate in the plate holder; wherein the plate holder is mountable in the apparatus to position the plate between the heating device and a wafer when the wafer is received by the rotatable chuck.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
26.
Systems and methods for preventing stiction of high aspect ratio structures and/or repairing high aspect ratio structures
A method for treating high aspect ratio (HAR) structures arranged on a surface of a substrate includes a) spin rinsing the surface of the substrate using a first rinsing liquid; b) spinning off the first rinsing liquid from the surface of the substrate; and c) directing a gas mixture containing hydrogen fluoride onto the surface of the substrate after the first rinsing liquid is dispensed.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
B08B 3/02 - Cleaning by the force of jets or sprays
B08B 13/00 - Accessories or details of general applicability for machines or apparatus for cleaning
The present application discloses a method of producing an aqueous rinsing liquid in an electrochemical cell having an anode chamber with an anode and a cathode chamber with a cathode, the anode chamber and cathode chamber being separated by a cation-selective membrane, wherein the method includes the steps of (a) feeding an aqueous anode chamber feedstock into the anode chamber (b) feeding an aqueous cathode chamber feedstock comprising at least one electrolyte through the cathode chamber; and (c) applying an electrical voltage to the anode and cathode to form rinsing liquid in the cathode chamber; and wherein steps a, b and c are performed, at least in part, simultaneously. Also disclosed is apparatus suitable for carrying out such methods.
C02F 1/461 - Treatment of water, waste water, or sewage by electrochemical methods by electrolysis
B08B 3/04 - Cleaning involving contact with liquid
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C02F 103/34 - Nature of the water, waste water, sewage or sludge to be treated from the chemical industry not provided for in groups
28.
APPARATUS FOR PROCESSING A WAFER, AND METHOD OF CONTROLLING SUCH AN APPARATUS
An apparatus for processing a wafer comprises: a rotatable chuck adapted to receive a wafer; a heating assembly comprising an array of heating elements arranged to heat a wafer received by the rotatable chuck; an image sensor arranged to detect electromagnetic radiation from a surface of the wafer; and a controller configured to control supply of power to the array of heating elements based on a measurement output of the image sensor.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
29.
APPARATUS FOR PROCESSING A WAFER, AND METHOD OF CONTROLLING SUCH AN APPARATUS
An apparatus for processing a wafer comprises: a rotatable chuck adapted to receive a wafer;a heating assembly comprising an array of light-emitting heating elements arranged to illuminate a wafer received by the rotatable chuck to heat the wafer; and one or more light sensors arranged to detect light emitted by the array of light-emitting heating elements.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
30.
Method and apparatus for processing wafer-shaped articles
An apparatus for processing wafer-shaped articles comprises a rotary chuck and a heating assembly that faces a wafer-shaped article when positioned on the rotary chuck. A liquid dispenser positioned so as to dispense liquid onto a surface of a wafer-shaped article that faces away from the rotary chuck when positioned on the rotary chuck. The heating assembly comprises an array of radiant heating elements distributed among at least five individually controllable groups. The liquid dispenser comprises one or more dispensing orifices configured to move a discharge point from a more central region of the rotary chuck to a more peripheral region of the rotary chuck. A controller controls power supplied to each of the at least five individually controllable groups of radiant heating elements based on a position of the discharge point of the liquid dispenser.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
31.
METHOD AND APPARATUS FOR TREATING SEMICONDUCTOR SUBSTRATE
The present invention relates to gas delivery systems and methods suitable for repairing or preventing stiction of high aspect ratio structures on semiconductor substrates. The gas delivery systems and methods deliver a mixture of a hydrogen halide, vapourised solvent and carrier gas to a substrate through a heated supply line (201), to avoid formation of droplets during transit of the gas mixture. The gas mixture supply line is preferably held within a conduit (202) which includes a purge gas supply line (204), which allows any hydrogen halide leaking through the gas mixture supply line (201) to be carried away by a flow of purge gas within the conduit. In such embodiments, the purge gas is also preferably heated, and used as a means of heating the dispensing outlet of the gas mixture supply line.
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
32.
GAS MIXTURE INCLUDING HYDROGEN FLUORIDE, ALCOHOL AND AN ADDITIVE FOR PREVENTING STICTION OF AND/OR REPAIRING HIGH ASPECT RATIO STRUCTURES
A gas mixture for treating a substrate in a substrate processing system includes hydrogen fluoride gas, a vapor of an alcohol, an additive consisting of a base, and a carrier gas. The gas mixture can be used to treat high aspect ratio (HAR) structures arranged on a surface of a substrate. A surface of the substrate may be spin rinsed using a first rinsing liquid. The first rinsing liquid is spun off from the surface of the substrate. The gas mixture is directed onto the surface of the substrate after the first rinsing liquid is dispensed.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
The present invention relates to a method for treating the surface of a wafer with multiple liquids, comprising rotating the surface of the wafer and discharging different liquid streams onto the rotating surface in a sequence from separate outlets, wherein the discharge of liquid streams which are contiguous in the sequence overlaps during a transition phase, and wherein during the transition phase the liquid streams merge after exiting said outlets to form a merged liquid stream before impacting the rotating surface. The invention also provides a liquid dispensing device incorporating a housing holding two or more liquid delivery tubes, wherein the tubes' outlets are inwardly angled towards one another, such that in use liquid streams delivered from the outlets of the two or more liquid delivery tubes merge to form a merged liquid stream.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
F16K 11/22 - Multiple-way valves, e.g. mixing valvesPipe fittings incorporating such valvesArrangement of valves and flow lines specially adapted for mixing fluid with two or more closure members not moving as a unit operated by separate actuating members with an actuating member for each valve, e.g. interconnected to form multiple-way valves
B08B 3/08 - Cleaning involving contact with liquid the liquid having chemical or dissolving effect
B01F 3/08 - Mixing, e.g. dispersing, emulsifying, according to the phases to be mixed liquids with liquids; Emulsifying
B05B 1/00 - Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
34.
Method and apparatus for processing wafer-shaped articles
A device for processing wafer-shaped articles comprises a closed process chamber that provides a gas-tight enclosure. A rotary chuck is located within the closed process chamber. A heater is positioned relative to the chuck so as to heat a wafer shaped article held on the chuck from one side only and without contacting the wafer shaped article. The heater emits radiation having a maximum intensity in a wavelength range from 390 nm to 550 nm. At least one first liquid dispenser is positioned relative to the chuck so as to dispense a process liquid onto a side of a wafer shaped article that is opposite the side of the wafer-shaped article facing the heater.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A vapor delivery head for wet treatment of a substrate includes a body including an upper surface, a lower surface, an upper plenum and a lower plenum. A first bore is arranged on the upper surface of the body and fluidly connected to the upper plenum to supply heated fluid. A second bore is arranged on the upper surface of the body and connected to the upper plenum to remove heated fluid. A third bore is arranged on the upper surface of the body and connected to the lower plenum to receive a gas mixture. A plurality of through holes through the lower surface of the body are in fluid communication with the lower plenum.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
The present invention relates to an etchant composition, in particular to an aqueous masking layer etchant composition for use in the removal of tungsten-doped carbon masking layers from a surface of a substrate, such as a semiconductor wafer. The composition comprises (a) 10 to 40 wt. %, based on the total weight of the composition, of hydrogen peroxide; and (b) 0.1 to 2.0 wt. %, based on the total weight of the composition, of one or more corrosion inhibitors.
The present application discloses a method of producing an aqueous rinsing liquid in an electrochemical cell having an anode chamber with an anode and a cathode chamber with a cathode, the anode chamber and cathode chamber being separated by a cation-selective membrane, wherein the method includes the steps of (a) feeding an aqueous anode chamber feedstock into the anode chamber (b) feeding an aqueous cathode chamber feedstock comprising at least one electrolyte through the cathode chamber; and (c) applying an electrical voltage to the anode and cathode to form rinsing liquid in the cathode chamber; and wherein steps a, b and c are performed, at least in part, simultaneously. Also disclosed is apparatus suitable for carrying out such methods.
A method for treating high aspect ratio (HAR) structures arranged on a surface of a substrate includes a) spin rinsing the surface of the substrate using a first rinsing liquid; b) spinning off the first rinsing liquid from the surface of the substrate; and c) directing a gas mixture containing hydrogen fluoride onto the surface of the substrate after the first rinsing liquid is dispensed.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
39.
Spin chuck with concentrated center and radial heating
A substrate processing system to treat a substrate includes a spin chuck configured to hold and rotate a substrate. A heating assembly is configured to heat an opposite surface of the substrate and includes a main heater assembly and a nozzle stack cap. The main heater assembly includes a first plurality of light emitting diodes (LEDs) arranged on a first printed circuit board (PCB) in a first plane that is spaced from and parallel to a second plane including the substrate. The nozzle stack cap assembly includes at least one nozzle to dispense liquid onto a center of a first surface of the substrate. A radiant heat source is arranged closer to the substrate than the first plane and is configured to heat the center of the first surface of the substrate.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
40.
Passivation mixture and systems and methods for selectively passivating substrate materials including germanium or type III-IV materials using the passivation mixture
A liquid passivation mixture for passivating an outer layer of a substrate comprises a first material selected from group consisting of sulfur or selenium and a base selected from a group consisting of quaternary ammonium compound, sodium hydroxide (NaOH), potassium hydroxide (KOH), and amine.
C23C 22/48 - Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH < 6 not containing phosphates, hexavalent chromium compounds, fluorides or complex fluorides, molybdates, tungstates, vanadates or oxalates
C23C 22/73 - Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals characterised by the process
C23C 22/60 - Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using alkaline aqueous solutions with pH > 8
C23C 22/00 - Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
41.
PASSIVATION MIXTURE AND SYSTEMS AND METHODS FOR SELECTIVELY PASSIVATING SUBSTRATE MATERIALS INCLUDING GERMANIUM OR TYPE III-IV MATERIALS USING THE PASSIVATION MIXTURE
A liquid passivation mixture for passivating an outer layer of a substrate comprises a first material selected from group consisting of sulfur or selenium and a base selected from a group consisting of quaternary ammonium compound, sodium hydroxide (NaOH), potassium hydroxide (KOH), and amine.
A spin chuck for processing a substrate includes a chuck configured to engage and rotate a substrate. A heating assembly is configured to heat at least one surface of the substrate. A liquid dispensing arm is moveable relative to the substrate and includes a liquid dispensing nozzle attached to the liquid dispensing arm to dispense liquid onto the substrate as the substrate is rotated. A first pyrometer is attached to the liquid dispensing arm and is directed at the liquid dispensed by the liquid dispensing nozzle onto the substrate.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
43.
Liquid mixture and method for selectively wet etching silicon germanium
A liquid mixture for etching a substrate includes a first liquid comprising one of: (i) percarboxylic acid comprising 3 to 70 mass. % of the liquid mixture; or (ii) carboxylic acid comprising 3 to 70 mass. % of the liquid mixture and at least one liquid selected from a group consisting of hydrogen peroxide comprising 3 to 30 mass. % of the liquid mixture and ozone comprising 0.5 to 5 mass. % of the liquid mixture; a water drawing agent comprising 2 to 40 mass. % of the liquid mixture; hydrofluoric acid comprising 0.05 to 3 mass. % of the liquid mixture; and water comprising 0 to 60 mass. % of the liquid mixture. The liquid mixture may be used to etch silicon germanium relative to silicon, silicon dioxide and silicon nitride.
A system for reducing surface and embedded charge in a substrate includes a substrate support configured to support a substrate. A vacuum ultraviolet (VUV) assembly is arranged adjacent to the substrate and includes a housing and a VUV lamp that is connected to the housing and that generates and directs ultraviolet (UV) light at the substrate. A movement device is configured to move at least one of the VUV assembly and the substrate support during exposure of the substrate to the UV light to reduce surface and embedded charge in the substrate.
G21K 1/14 - Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using charge exchange devices, e.g. for neutralising or changing the sign of the electrical charges of beams
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
45.
Method and apparatus for processing wafer-shaped articles
A method for drying wafer-shaped articles comprises rotating a wafer-shaped article of a predetermined diameter on a rotary chuck, and dispensing a drying liquid onto one side of the wafer-shaped article. The drying liquid comprises greater than 50 mass % of an organic solvent. During at least part of the dispensing step, the wafer-shaped article is heated with a heating assembly. During at least part of the dispensing step a fluorine-containing compound is present in the drying liquid or in a gas that surrounds the drying liquid as the drying liquid contacts the wafer-shaped article.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
46.
Apparatus and radiant heating plate for processing wafer-shaped articles
An apparatus for processing wafer-shaped articles includes a rotary chuck adapted to hold a wafer-shaped article of a predetermined diameter thereon. A radiant heating plate faces a wafer-shaped article when positioned on the rotary chuck. The radiant heating plate includes radiant heating elements, but a central region of the radiant heating plate is free of radiant heating elements. The radiant heating plate further includes at least one refraction element that refracts radiation emitted by the radiant heating elements and passed through the at least one refraction element, toward the central region of the radiant heating plate.
H05B 3/68 - Heating arrangements specially adapted for cooking plates or analogous hot-plates
F26B 3/30 - Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun from infrared-emitting elements
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
47.
Method and apparatus for processing wafer-shaped articles
An apparatus for processing wafer-shaped articles comprises a rotary chuck and a heating assembly that faces a wafer-shaped article when positioned on the rotary chuck. A liquid dispenser positioned so as to dispense liquid onto a surface of a wafer-shaped article that faces away from the rotary chuck when positioned on the rotary chuck. The heating assembly comprises an array of radiant heating elements distributed among at least five individually controllable groups. The liquid dispenser comprises one or more dispensing orifices configured to move a discharge point from a more central region of the rotary chuck to a more peripheral region of the rotary chuck. A controller controls power supplied to each of the at least five individually controllable groups of radiant heating elements based on a position of the discharge point of the liquid dispenser.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
48.
Method and apparatus for liquid treatment of wafer shaped articles
An apparatus for processing wafer-shaped articles comprises a rotary chuck adapted to hold a wafer shaped article thereon. The rotary chuck comprises a peripheral series of pins configured to contact an edge region of a wafer-shaped article. Each of the pins projects from the rotary chuck, and each of the pins comprises a projecting portion having a gripping element at a distal end thereof, and a proximal portion comprising a drive mechanism at a proximal end thereof by which the pin can be rotated. The projecting portion and the proximal portion comprise interengageable connectors configured to allow the projecting and proximal portions to be interconnected by pressing the projecting portion against the proximal portion and to be disconnected by pulling the projecting portion away from the proximal portion.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
49.
Method and apparatus for processing wafer-shaped articles
In an apparatus for treating a wafer-shaped article, a spin chuck is configured to hold a wafer-shaped article of a predetermined diameter. A non-rotating plate is positioned relative to the spin chuck such that the non-rotating plate is beneath and parallel to a wafer-shaped article when positioned on the spin chuck. A fluid dispensing nozzle passes through the non-rotating plate and terminates in a discharge end positioned above and adjacent to the non-rotating plate. The discharge end comprises a horizontal gas discharge nozzle configured to distribute gas radially outwardly across an upper surface of the non-rotating plate.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B05C 13/00 - Means for manipulating or holding work, e.g. for separate articles
B05C 9/14 - Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by groups , or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation involving heating
B05C 5/02 - Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work from an outlet device in contact, or almost in contact, with the work
An apparatus for processing wafer-shaped articles comprises a vacuum transfer module and an atmospheric transfer module. A first airlock interconnects the vacuum transfer module and the atmospheric transfer module. An atmospheric process module is connected to the atmospheric transfer module. A gas supply system is configured to supply gas separately and at different controlled flows to each of the atmospheric transfer module, the first airlock and the atmospheric process module, so as to cause: (i) a flow of gas from the first airlock to the atmospheric transfer module when the first airlock and the atmospheric transfer module are open to one another, and (ii) a flow of gas from the atmospheric transfer module to the atmospheric process module when the atmospheric transfer module and the atmospheric process module are open to one another.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
51.
Apparatus for liquid treatment of wafer shaped articles
An apparatus for treating a wafer-shaped article comprises a spin chuck configured to hold a wafer-shaped article of a predetermined diameter in a position wherein a lower surface of the wafer-shaped article is spaced a predetermined distance from an upper surface of the spin chuck. A treatment assembly is mounted above the upper surface of the spin chuck and underlying a wafer-shaped article when mounted on the spin chuck. The treatment assembly extends parallel to the upper surface from an axis of rotation of the spin chuck radially to a distance that is at least half the predetermined diameter. The spin chuck comprises upwardly projecting gripping pins configured to hold a wafer-shaped article in position, wherein the gripping pins do not pass through the treatment assembly.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B08B 3/10 - Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
In a method and apparatus for processing wafer-shaped articles, a spin chuck is positioned inside a process chamber. The spin chuck is configured to hold a wafer-shaped article at a predetermined process position. A cover covers the spin chuck and is affixed to or integral with the spin chuck for rotation therewith. The cover has a central opening. A stationary nozzle assembly extends into the process chamber such that a discharge end of the stationary nozzle assembly passes through the central opening of the cover. The nozzle assembly comprises a rinse nozzle configured to direct rinse liquid radially outwardly of the nozzle assembly onto a downwardly-facing surface of the cover.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
B08B 3/04 - Cleaning involving contact with liquid
B08B 9/00 - Cleaning hollow articles by methods or apparatus specially adapted thereto
F26B 21/00 - Arrangements for supplying or controlling air or gases for drying solid materials or objects
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
53.
Apparatus for treating surfaces of wafer-shaped articles
A device for processing wafer-shaped articles comprises a closed process chamber providing a gas-tight enclosure, and a rotary chuck located within the closed process chamber. The closed process chamber comprises an annular duct surrounding the rotary chuck and extending along a first direction radially outwardly of the rotary chuck and obliquely to a rotary axis of the rotary chuck, from an inlet end that communicates with the rotary chuck to an outlet end that communicates with an exhaust duct. The annular duct comprises a duct section extending between the inlet and outlet ends that is defined by an inner chamber wall spaced apart from an outer chamber wall. The extent of the duct section along the first direction is at least twice a spacing of the inner and outer chamber walls throughout the duct section, as measured in a direction perpendicular to the first direction.
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
54.
Apparatus for treating surfaces of wafer-shaped articles
A rotary chuck for processing wafer-shaped articles comprises a chuck body having a series of gripping pins that are movable by sliding horizontally and in unison relative to the chuck body from a first position in which the gripping pins are relatively more retracted into the chuck body to a second position in which the gripping pins are relatively more extended from the chuck body and in which the gripping pins are positioned so as to support a wafer-shaped article of a predetermined diameter.
B23B 31/163 - Chucks with simultaneously-acting jaws, whether or not also individually adjustable moving radially actuated by one or more spiral grooves
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A slit nozzle for dispensing liquid onto a surface of a wafer, comprises a nozzle body having a discharge opening whose length is from 10-100 mm and whose width is from 0.5-5 mm. The nozzle body has a dispensing chamber positioned upstream of the discharge opening and extending to the discharge opening, and a liquid distribution chamber positioned upstream of the dispensing chamber. The dispensing chamber and the liquid distribution chamber are in fluid communication with one another and are separated by a reduction section of the nozzle body whose cross-sectional area is at least 20% less than a cross-sectional area of each of the discharge opening and the liquid distribution chamber.
B05B 1/00 - Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
B05C 5/02 - Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work from an outlet device in contact, or almost in contact, with the work
B05B 1/04 - Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops in flat form, e.g. fan-like, sheet-like
B05B 15/02 - Arrangements or devices for cleaning discharge openings
B05B 1/28 - Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with integral means for shielding the discharged liquid or other fluent material, e.g. to limit area of sprayNozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with integral means for catching drips or collecting surplus liquid or other fluent material
B05B 15/00 - Details of spraying plant or spraying apparatus not otherwise provided forAccessories
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
An apparatus for processing wafer-shaped articles comprises a spin chuck for holding a wafer-shaped article in a predetermined orientation, and a rotating shower head for supplying process gas to a surface of a wafer-shaped article when held by the spin chuck. The rotating shower head comprises an outlet plate having plural openings formed in each of a central and a peripheral region thereof. A process gas feed is provided so as to supply process gas to a gas distribution chamber. The gas distribution chamber is in fluid communication with a plurality of openings formed in the shower head.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
57.
Device for measuring the distribution or impulse of a series of droplets
A device for measuring the distribution and/or impulse of a series of droplets comprises a piezoelectric sensor positioned relative to a source of droplets such that each of a plurality of droplets contacts the piezoelectric sensor in succession, thereby to generate an electrical signal. Logic circuitry is configured to calculate one or more frequencies from the electrical signal.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
G01L 5/00 - Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
58.
Apparatus for liquid treatment of wafer shaped articles and heating system for use in such apparatus
An apparatus for treating a disc-shaped article comprises a spin chuck and at least three individually controllable infrared heating elements. The infrared heating elements are mounted in a stationary manner with respect to rotation of said spin chuck. At least the transparent plate positioned between the infrared heating elements and the underside of a wafer is mounted for rotation with the spin chuck. Alternatively, the transparent plate is part of a housing that encloses the infrared heating elements and that rotates with the spin chuck as the heating elements are stationary relative thereto.
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
An apparatus for processing wafer-shaped articles comprises a rotary chuck adapted to hold a wafer shaped article of a predetermined diameter in a predetermined orientation. The chuck includes a heater comprising a plurality of gas nozzles directed toward a surface of a wafer shaped article when held by the chuck. The heater comprises a gas inlet and at least one heating element for heating gas to be discharged through the plurality of gas nozzles. The heater is configured to heat a wafer shaped article principally by convective heat transfer from heated gas discharged through the plurality of gas nozzles.
F26B 19/00 - Machines or apparatus for drying solid materials or objects not covered by groups
F26B 3/04 - Drying solid materials or objects by processes involving the application of heat by convection, i.e. heat being conveyed from a heat source to the materials or objects to be dried by a gas or vapour, e.g. air the gas or vapour circulating over, or surrounding, the materials or objects to be dried
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
60.
Method and apparatus for processing wafer-shaped articles
A device for processing wafer-shaped articles comprises a closed process chamber that provides a gas-tight enclosure. A rotary chuck is located within the closed process chamber. A heater is positioned relative to the chuck so as to heat a wafer shaped article held on the chuck from one side only and without contacting the wafer shaped article. The heater emits radiation having a maximum intensity in a wavelength range from 390 nm to 550 nm. At least one first liquid dispenser is positioned relative to the chuck so as to dispense a process liquid onto a side of a wafer shaped article that is opposite the side of the wafer-shaped article facing the heater.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A device for processing wafer-shaped articles comprises a closed process chamber. The closed process chamber comprises a housing providing a gas-tight enclosure, a rotary chuck located within the closed process chamber and adapted to hold a wafer shaped article thereon, and an interior cover disposed within said closed process chamber. The interior cover is movable between a first position in which the rotary chuck communicates with an outer wall of the closed process chamber, and a second position in which the interior cover seals against an inner surface of the closed process chamber adjacent the rotary chuck to define a gas-tight inner process chamber.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
62.
Method and apparatus for liquid treatment of wafer shaped articles
In an apparatus for treating a wafer-shaped article, a spin chuck is provided for holding and rotating a wafer-shaped article. A liquid dispenser comprises a check valve positioned so as to prevent process liquid from dripping out of a discharge nozzle of the liquid dispenser. A valve seat of the check valve is at a distance in a range of 20 mm to 100 mm from an outlet opening of said discharge nozzle.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
F16K 23/00 - Valves for preventing drip from nozzles
63.
Apparatus for liquid treatment of wafer shaped articles
An apparatus for processing wafer-shaped articles comprises a spin chuck adapted to hold and spin a wafer-shaped article of a predetermined diameter during a processing operation. A liquid collector surrounds the spin chuck, and comprises a first inner surface. The first inner surface comprises a first conductive material. The collector further comprises a first conductive pathway for grounding the first conductive material.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
64.
Device and method for removing liquid from a surface of a disc-like article
A device for removing liquid from a surface of a disc-like article comprises a spin chuck for holding and rotating a single disc-like article about an axis of rotation and a liquid dispenser for dispensing liquid onto the disc-like article. A first gas dispenser comprises at least one nozzle with at least one orifice for blowing gas onto the disc-like article, and a second gas dispenser comprises at least one nozzle with at least one orifice for blowing gas onto the disc-like article. A rotary arm moves the liquid dispenser and the second gas dispenser across the disc-like article so that the second gas dispenser and the liquid dispenser move to a point in a peripheral region of the spin chuck. The at least one nozzle of the second gas dispenser is elongated along a first horizontal line that defines an angle α of 5-20° relative to a second horizontal line connecting the center of the second gas dispenser and the rotation axis of the rotary arm.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
65.
Method and apparatus for processing wafer-shaped articles
A method and device for processing wafer-shaped articles includes a spin chuck for holding and rotating a wafer-shaped article about a rotation axis, and at least one dispenser for dispensing a fluid onto at least one surface of a wafer-shaped article. A collector surrounds the spin chuck for collecting process fluids, with at least two collector levels for separately collecting fluids in different collector levels. Each collector level comprises an exhaust gas collecting chamber leading to a respective exhaust gas conduit. At least one of the exhaust gas conduits comprises a valve mechanism that reciprocally restricts exhaust gas flow from its associated exhaust gas conduit while opening the exhaust gas conduit to an ambient environment outside the collector, and vice-versa.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
66.
Method and apparatus for liquid treatment of wafer shaped articles
An apparatus for processing wafer-shaped articles includes a rotary chuck adapted to hold a wafer shaped article thereon. The rotary chuck includes a peripheral series of pins configured to contact an edge region of a wafer-shaped article. Each of the pins projects upwardly from the rotary chuck, and each of the pins is individually secured to the rotary chuck by a respective connecting mechanism. Any selected one of the pins can be removed from the rotary chuck by disconnecting its corresponding connecting mechanism without removing any structure of the rotary chuck that surrounds any others of the pins.
H05B 3/68 - Heating arrangements specially adapted for cooking plates or analogous hot-plates
C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
67.
Apparatus for treating surfaces of wafer-shaped articles
An apparatus for processing wafer-shaped articles comprises a closed process chamber providing a gas-tight enclosure. A rotary chuck is located within the closed process chamber, and is adapted to hold a wafer shaped article thereon. A lid is secured to an upper part of the closed process chamber. The lid comprises an annular chamber, gas inlets communicating with the annular chamber and opening on a surface of the lid facing outwardly of the closed process chamber, and gas outlets communicating with the annular chamber and opening on a surface of the lid facing inwardly of the closed process chamber.
B05B 13/02 - Means for supporting workArrangement or mounting of spray headsAdaptation or arrangement of means for feeding work
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
An apparatus for processing wafer-shaped articles comprises a closed process chamber providing a gas-tight enclosure. A rotary chuck is located within the closed process chamber, the rotary chuck being adapted to hold a wafer shaped article thereon. A lid is secured to an upper part of the closed process chamber, the lid comprising an upper plate formed from a composite fiber-reinforced material and a lower plate that faces into the process chamber and is formed from a chemically-resistant plastic.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
69.
Apparatus for treating surfaces of wafer-shaped articles
An apparatus for processing wafer-shaped articles, comprises a closed process chamber providing a gas-tight enclosure. A rotary chuck is located within the closed process chamber, and is adapted to hold a wafer shaped article thereon. A lid is secured to an upper part of the closed process chamber, and comprises a lower surface facing inwardly of the chamber. At least one heating element heats the lower surface of the lid to a desired temperature, so as to prevent condensation of process vapor on the inwardly facing surface of the lid.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A device for holding a wafer-shaped article comprises an annular chuck base body having a plurality of movable contact elements for securing a wafer-shaped article to the annular chuck base body, and a gear mechanism driving the contact elements in unison between a first position and a second position. The annular chuck base body comprises a housing formed from a material that is resistant to attack by strong inorganic acids. The annular chuck base body also comprises a reinforcing ring fitted within the housing and formed from a material whose coefficient of linear thermal expansion is substantially less than that of the housing material.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B08B 3/04 - Cleaning involving contact with liquid
B08B 11/02 - Devices for holding articles during cleaning
F16D 27/09 - Magnetically-actuated clutchesControl or electric circuits therefor with electromagnets incorporated in the clutch, i.e. with collecting rings and with interengaging jaws or gear-teeth
71.
Apparatus for liquid treatment of disc-shaped articles and heating system for use in such apparatus
An apparatus for treating a disc-shaped article comprises a spin chuck and at least three individually controllable infrared heating elements. The infrared heating elements are mounted in a stationary manner with respect to rotation of said spin chuck. The infrared heating elements are arranged in a nested configuration so as to define individually controllable inner, middle and outer heating zones adjacent a disc-shaped article when positioned on the spin chuck.
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
F27B 17/00 - Furnaces of a kind not covered by any of groups
F27D 99/00 - Subject matter not provided for in other groups of this subclass
72.
Method and apparatus for liquid treatment of wafer-shaped articles
An apparatus for treating a wafer-shaped article, comprises a spin chuck for holding a wafer-shaped article in a predetermined orientation, a liquid dispenser for dispensing a treatment liquid onto a downwardly facing surface of a wafer-shaped article when positioned on the spin chuck, and a gas dispenser for dispensing a gas within a gap defined between the downwardly-facing surface of the wafer-shaped article and an upper surface of the spin chuck.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
73.
Apparatus for liquid treatment of wafer shaped articles and heating system for use in such apparatus
An apparatus for treating a disc-shaped article comprises a spin chuck and at least three individually controllable infrared heating elements. The infrared heating elements are mounted in a stationary manner with respect to rotation of said spin chuck. At least the transparent plate positioned between the infrared heating elements and the underside of a wafer is mounted for rotation with the spin chuck. Alternatively, the transparent plate is part of a housing that encloses the infrared heating elements and that rotates with the spin chuck as the heating elements are stationary relative thereto.
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
F27D 3/00 - ChargingDischargingManipulation of charge
74.
Collector for use with an apparatus for treating wafer-shaped articles
A collector assembly for use with a spin chuck includes a base component, a top component and a first intermediate component configured to be fitted between the base component and the top component. The base, top and first intermediate components are configured so as to be interconnectable to form a process enclosure and so as to be separable from one another. The base component and the intermediate component each comprise collector wall segments such that when the base, top and first intermediate components are interfitted, the wall segments together define an outer side wall of the collector assembly.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
75.
Process and apparatus for treating surfaces of wafer-shaped articles
An apparatus and method for processing wafer-shaped articles utilizes at least first and second liquid-dispensing nozzles, wherein a first liquid-dispensing nozzle is positioned closer to an axis of rotation than the second liquid-dispensing nozzle. A liquid supply system supplies heated process liquid to the nozzles such that process liquid dispensed from the first nozzle has a temperature that differs by an amount within a predetermined range from a temperature of process liquid dispensed from the second liquid-dispensing nozzle.
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
76.
Method and apparatus for surface treatment using inorganic acid and ozone
An apparatus for treating a surface of an article includes a chamber for receiving an article to be treated. A dispenser dispenses a treatment liquid including inorganic acid onto the article. A tank stores the treatment liquid. An ozone generator communicates with a supply line entering or exiting the tank to mix ozone with the treatment liquid. A cooler cools the treatment liquid to a subambient temperature in a range of 3° C. to less than 20° C. A heater heats a surface of an article to be treated to a temperature at least 30° C. greater than a temperature of the treatment liquid when applied to the article.
B08B 3/00 - Cleaning by methods involving the use or presence of liquid or steam
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The wet treatment of wafer-shaped articles is improved by utilizing a droplet generator designed to produce a spray of monodisperse droplets. The droplet generator is mounted above a spin chuck, and is moved across a major surface of the wafer-shaped article in a linear or arcuate path. The droplet generator includes a transducer acoustically coupled to its body such that sonic energy reaches a region of the body surrounding the discharge orifices. Each orifice has a width w of at least 1 μm and at most 200 μm and a height h such that a ratio of h to w is not greater than 1.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
78.
Apparatus for liquid treatment of wafer shaped articles and liquid control ring for use in same
An apparatus for treating a wafer-shaped article includes a rotary chuck configured to hold a wafer-shaped article of a predetermined diameter such that a surface of the wafer-shaped article facing the rotary chuck is spaced from an upper surface of the rotary chuck. A ring is mounted on the rotary chuck, and includes a first upper surface overlapping an outer peripheral edge of a wafer-shaped article when positioned on the rotary chuck and a second upper surface positioned radially inwardly of the first surface. The second upper surface is elevated relative to the first upper surface, to define an annular gap between the second upper surface and a wafer-shaped article when positioned on the spin chuck that is smaller than a distance between the first upper surface and a wafer-shaped article when positioned on the rotary chuck.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
79.
Apparatus for liquid treatment of work pieces and flow control system for use in same
A flow control system in an apparatus for treating a work piece controls a flow rate of treatment liquid dispensed from a liquid dispenser. The system includes a flow meter that measures a flow rate of liquid being supplied to the liquid dispenser, a controller that receives signals indicative of a flow rate measured by the flow meter, and a pressure regulator that regulates pressure of the liquid supply downstream of the flow meter based on control signals from the controller. At least two alternative liquid supply paths are provided downstream of the pressure regulator and upstream of an outlet of the liquid dispenser. Each supply path is equipped with a respective shutoff valve and provides a respectively different pressure drop to the treatment liquid.
The harmful effects of accumulating droplets of process liquid on the outer surface of a dispense nozzle are prevented by equipping an apparatus for process wafer-shaped articles with a blow-off block that blows the droplets off the nozzle outer surface before they can coalesce and drop in an uncontrolled manner onto the work piece. The nozzle preferably has a polished and tapered outer surface to aid in blowing off any accumulated droplets of process liquid from the outer surface.
B05B 15/02 - Arrangements or devices for cleaning discharge openings
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
81.
Method and apparatus for liquid treatment of wafer shaped articles
In an apparatus and process for treating wafer-shaped articles, a spin chuck holds a wafer-shaped article in a predetermined orientation relative to an upper surface of the spin chuck. A heating assembly comprises a housing containing at least one infrared heating element. The heating assembly is mounted above the upper surface of the spin chuck and adjacent a wafer-shaped article when mounted on the spin chuck. The housing also contains a conduit having an inlet connected to a source of cooling fluid and an outlet returning cooling fluid to the source of cooling fluid.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
82.
Apparatus for liquid treatment of wafer shaped articles
Apparatus for processing wafer-shaped articles comprises a chuck adapted to hold a wafer-shaped article of a predetermined diameter during a processing operation to be performed on the wafer-shaped article. The chuck comprises a chuck body having an outer surface that faces a wafer-shaped article when positioned on the chuck. The outer surface comprises a first electrically conductive material and the chuck body further comprises a first conductive pathway between the first conductive material and ground.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
83.
Method and apparatus for liquid treatment of wafer shaped articles
In an apparatus and process for treating wafer-shaped articles, a spin chuck holds a wafer-shaped article in a predetermined orientation relative to an upper surface of the spin chuck. The apparatus includes a heating assembly having a housing that contains at least one infrared heating element. The heating assembly is mounted above an upper surface of the spin chuck and adjacent a wafer-shaped article when mounted on the spin chuck. The housing comprises a gas inlet connected to a gas supply, and at least one outlet for discharging gas from the housing.
F27D 5/00 - Supports, screens or the like for the charge within the furnace
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
84.
APPARATUS AND METHOD FOR LIQUID TREATMENT OF WAFER-SHAPED ARTICLES
An apparatus and method for liquid treatment of wafer- shaped articles comprises a process unit comprising a chuck for holding a wafer-shaped article in a predetermined orientation, and a liquid recovery system that receives used process liquid recovered from the process unit. The liquid recovery system supplies process liquid to a dispenser in the process unit. A supply of fresh process liquid supplies fresh process liquid to the liquid recovery system and also supplies fresh process liquid to a dispenser in the process unit while bypassing the liquid recovery system.
An apparatus and method for processing wafer-shaped articles comprises an array of nozzles that are stationary in use, and are individually controlled to simulate the action of a moving boom arm without the actual need for such an arm. Preferably three such arrays are provided, for dispensing three different types of liquid at various process stages. The computer control of the nozzle valves may cause only one nozzle of each array to be open at any given time, or may cause a pair of adjacent nozzles to be open simultaneously.
A hybrid plasma processing system and methods for manufacturing and operating same are disclosed. The hybrid plasma processing system includes an RF -powered lower electrode for supporting the substrate during processing and a hybrid upper electrode disposed in a spaced-apart relationship above the lower electrode. The hybrid upper electrode may be thermally controlled and includes a first plate formed of a first material having a first electrical resistivity, a conductive grounded plate having therein a plurality of radial slots and disposed above the first plate. The conductive plate is formed of a second material having a second electrical resistivity different from the first electrical resistivity. The hybrid upper electrode also includes an RF -powered inductive coil disposed above the conductive ground plate.
A synchronized pulsing arrangement for providing at least two synchronized pulsing RF signals to a plasma processing chamber of a plasma processing system is provided. The arrangement includes a first RF generator for providing a first RF signal. The first RF signal is provided to the plasma processing chamber to energize a plasma therein, the first RF signal representing a pulsing RF signal. The arrangement also includes a second RF generator for providing a second RF signal to the plasma processing chamber. The second RF generator has a sensor subsystem for detecting values of at least one parameter associated with the plasma processing chamber that reflects whether the first RF signal is pulsed high or pulsed low and a pulse controlling subsystem for pulsing the second RF signal responsive to the detecting the values of at least one parameter.
A method for processing substrate in a chamber, which has at least one plasma generating source, a reactive gas source for providing reactive gas into the interior region of the chamber, and a non-reactive gas source for providing non-reactive gas into the interior region, is provided. The method includes performing a mixed-mode pulsing (MMP) preparation phase, including flowing reactive gas into the interior region and forming a first plasma to process the substrate that is disposed on a work piece holder. The method further includes performing a MMP reactive phase, including flowing at least non-reactive gas into the interior region, and forming a second plasma to process the substrate, the second plasma is formed with a reactive gas flow during the MMP reactive phase that is less than a reactive gas flow during the MMP preparation phase. Perform the method, steps a plurality of times.
C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
89.
APPARATUS FOR TREATING SURFACES OF WAFER-SHAPED ARTICLES
A device and method for processing wafer-shaped articles comprises a process chamber and a rotary chuck located within the process chamber. The rotary chuck is adapted to be driven without physical contact through a magnetic bearing. The rotary chuck comprises a series of gripping pins adapted to hold a wafer shaped article in a position depending downwardly from the rotary chuck. The rotary chuck further comprises a plate that rotates together with the rotary chuck. The plate is positioned above an area occupied by the wafer-shaped article, and shields upper surfaces of the process chamber from liquids flung off of a wafer-shaped article during use of the rotary chuck.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
90.
Apparatus for treating surfaces of wafer-shaped articles
A device and method for processing wafer-shaped articles comprises a process chamber and a rotary chuck located within the process chamber. The rotary chuck is adapted to be driven without physical contact through a magnetic bearing. The rotary chuck comprises a series of gripping pins adapted to hold a wafer shaped article in a position depending downwardly from the rotary chuck. The rotary chuck further comprises a plate that rotates together with the rotary chuck. The plate is positioned above an area occupied by the wafer-shaped article, and shields upper surfaces of the process chamber from liquids flung off of a wafer-shaped article during use of the rotary chuck.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
91.
DEVICE FOR TREATING SURFACES OF WAFER-SHAPED ARTICLES AND GRIPPING PIN FOR USE IN THE DEVICE
A device for processing wafer-shaped articles comprises a rotary chuck having a series of pins adapted to hold a wafer shaped article on the rotary chuck. Each of the pins comprises a cylindrical body and a projecting gripping portion formed integrally therewith. The cylindrical body and gripping portion are made from a ceramic material. The gripping portion comprises cylindrical surfaces having a common generatrix with surfaces of the cylindrical body.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A method etching features through a stack of a silicon nitride layer over a silicon layer over a silicon oxide layer in a plasma processing chamber is provided. The silicon nitride layer is etched in the plasma processing chamber, comprising; flowing a silicon nitride etch gas; forming the silicon nitride etch gas into a plasma to etch the silicon nitride layer, and stopping the flow of the silicon nitride etch gas. The silicon layer is, comprising flowing a silicon etchgas, wherein the silicon etch gas comprises SF6 or SiF4, forming the silicon etch gas into a, and stopping the flow of the silicon etch gas. The silicon oxide layer is etched in the plasma processing chamber, comprising flowing a silicon oxide etch gas, forming the silicon oxide etch gas into a plasma, and stopping the flow of the silicon oxide etch gas.
A device for processing wafer-shaped articles comprises a rotary chuck having a series of pins adapted to hold a wafer shaped article on the rotary chuck. Each of the pins comprises a cylindrical body and a projecting gripping portion formed integrally therewith. The cylindrical body and gripping portion are made from a ceramic material. The gripping portion comprises cylindrical surfaces having a common generatrix with surfaces of the cylindrical body.
B23B 31/18 - Chucks with simultaneously-acting jaws, whether or not also individually adjustable pivotally movable in planes containing the axis of the chuck
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A method for forming devices with silicon gates over a substrate is provided. Silicon nitride spacers are formed on sides of the silicon gates. An ion implant is provided using the silicon nitride spacers as masks to form ion implant regions. A nonconformal layer is selectively deposited over the spacers and gates that selectively deposits a thicker layer on tops of the gates and spacers and between spacers than on sidewalls of the silicon nitride spacers. Sidewalls of the nonconformal layer are etched away on sidewalls of the silicon nitride spacers. The silicon nitride spacers are trimmed.
A liquid composition for wet etching has improved selectivity for polysilicon over silicon dioxide, even when the polysilicon is heavily doped and/or the silicon dioxide is a low temperature oxide. The composition comprises 0.05-0.4 percent by weight hydrofluoric acid, 15-40 percent by weight nitric acid, 55-85 percent by weight sulfuric acid and 2-20 percent by weight water. A method and apparatus for wet etching using the composition are also disclosed.
A method and device for processing wafer-shaped articles comprises a closed process chamber. A rotary chuck is located within the process chamber, and is adapted to hold a wafer shaped article thereon. An interior fluid distribution ring is positioned above the rotary chuck, and comprises an annular surface inclined downwardly from a radially inner edge to a radially outer edge thereof. At least one fluid distribution nozzle extends into the closed process chamber and is positioned so as to discharge fluid onto the annular surface of the fluid distribution ring.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
97.
DEVICE AND METHOD FOR PROCESSING WAFER SHAPED ARTICLES
A device for processing wafer-shaped articles, comprises a chuck adapted to receive a wafer shaped article and a collector surrounding the chuck. The collector comprises a base and a plurality of divider walls, as well as a plurality of nested partitions surrounding the chuck. Each of the plurality of nested partitions is positioned on a corresponding one of the plurality of divider walls, and each of the plurality of nested partitions is vertically movable so as to define a plurality of separate process regions within the collector depending on the vertical position of each of the plurality of nested partitions. At least one of the divider walls comprises an internal exhaust conduit communicating with an exhaust duct underlying the divider wall.
B08B 3/00 - Cleaning by methods involving the use or presence of liquid or steam
B08B 3/02 - Cleaning by the force of jets or sprays
B05C 9/06 - Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by groups , or in which the means of applying the liquid or other fluent material is not important for applying two different liquids or other fluent materials, or the same liquid or other fluent material twice, to the same side of the work
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/46 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups
98.
Method and device for processing wafer shaped articles
A method and device for treating a wafer-shaped article utilizes a novel clamping mechanism, which permits wafer shift to be performed with reduced wear to the chuck pins. A wafer is rotated on a spin chuck that has a plurality of pins positioned at a periphery of the wafer shaped article. The pins each have a head portion which, in a service position, extends radially inwardly of and above the wafer. Gas is supplied onto a surface of the wafer facing the spin chuck at a flow rate sufficient to displace the wafer upwardly into contact with the head portions of the pins. This serves to clamp the wafer against the head portions of the pins. However, the pins contact the wafer only on upwardly oriented wafer surfaces and the wafer is supported from below solely by the gas flow.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
B25B 5/06 - Arrangements for positively actuating jaws
99.
Device and method for processing wafer shaped articles
A device for processing wafer-shaped articles, comprises a chuck adapted to receive a wafer shaped article, and a collector surrounding the chuck. The collector comprises a base and a plurality of divider walls, as well as a plurality of nested partitions surrounding the chuck. Each of the plurality of nested partitions is positioned on a corresponding one of the plurality of divider walls, and each of the plurality of nested partitions is vertically movable so as to define a plurality of separate process regions within the collector depending on the vertical position of each of the plurality of nested partitions. At least one of the divider walls comprises an internal exhaust conduit communicating with an exhaust duct underlying the divider wall.
B08B 3/04 - Cleaning involving contact with liquid
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A method for processing substrate in a processing chamber, which has at least one plasma generating source and a gas source for providing process gas into the chamber, is pro vided. The method includes exciting the plasma generating source with an RF signal having RF frequency. The method further includes pulsing the gas source, using at least a first gas pulsing frequency, such that a first process gas is flowed into the chamber daring a first portion of a gas pulsing period and a second process gas is flowed into the chamber during a second portion of the gas pulsing period, which is associated with the first gas pulsing frequency. The second process gas has a lower reactant-gas-to-inett-gas ratio relative to a reactant-gas-to-inert-gas ratio of the first process gas. The second process gas is formed by removing at least a portion of a reactant gas flow.from the first process gas.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
