A sterilization module including a main body, a circuit board disposed in the main body, a light source disposed on the circuit board to emit sterilizing light, and a transparent unit to protect the light source from an outside and including a material that transmits the sterilizing light, in which the light source includes a mesa including a first semiconductor layer, an active layer, and a second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode disposed on the second semiconductor layer and electrically connected to the second semiconductor layer, in which the first electrode includes a first contact region disposed on the outer area of the first semiconductor layer and a second contact region at least partially surrounded by the mesa, and a distance between the transparent unit and the circuit board is greater than a height of the light source.
A light emitting device for a display including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, and having a side surface exposing the active layer, in which a portion of the second conductivity type semiconductor layer and the active layer along an edge of the light emitting structure is insulative in a thickness direction to define an insulation region, and the insulation region includes implanted ions.
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
H10H 20/824 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
A light emitting device for a display including a first LED sub-unit laterally extending along a first direction, a second LED sub-unit, and a third LED sub-unit, electrode pads each overlapping at least a portion of the first LED sub-unit along a vertical direction and electrically connected to at least one of the first, second, and third LED sub-units, a lower insulation layer having a first surface extending in the first direction, a molding member covering each of the first LED sub-unit, the second LED sub-unit, and the third LED sub-unit, and lead electrodes electrically connected to the electrode pads and extending along the first surface and a side surface of the lower insulation layer, in which a portion of an outer region of each of the lead electrodes is disposed inside the outer boundary of the molding member when viewed in a cross-section.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A light source unit for plant cultivation includes: a first light emitter emitting a primary light and a converter disposed on a path of the primary light to produce a first light, and a second light emitter emitting a second light, wherein combined light emitted from the first light emitter and the second light emitter produces a basic spectrum including at least three peak wavelengths, with a difference between relative intensities of at least two of the peak wavelengths being less than 20%.
F21K 9/64 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
A01G 7/04 - Electric or magnetic treatment of plants for promoting growth
A light emitting diode includes a first light emitting cell and a second light emitting cell comprising an n-type semiconductor layer, and a p-type semiconductor layer, respectively; reflection structures contacting the p-type semiconductor layers; a first contact layer in ohmic contact with the n-type semiconductor layer of the first light emitting cell; a second contact layer in ohmic contact with the n-type semiconductor layer of the second light emitting cell and connected to the reflection structure on the first light emitting cell. An n-electrode pad is connected to the first contact layer; and a p-electrode pad is connected to the reflection structure on the second light emitting cell. The first light emitting cell and the second light emitting cell are isolated from each other, and their outer side surfaces are inclined steeper than the inner sides. Therefore, a forward voltage may be lowered and light output may be improved.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10H 20/813 - Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
H10H 20/814 - Bodies having reflecting means, e.g. semiconductor Bragg reflectors
H10H 20/82 - Roughened surfaces, e.g. at the interface between epitaxial layers
H10H 20/821 - Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
H10H 20/825 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
H10H 20/831 - Electrodes characterised by their shape
H10H 20/832 - Electrodes characterised by their material
H10H 20/84 - Coatings, e.g. passivation layers or antireflective coatings
H10H 20/841 - Reflective coatings, e.g. dielectric Bragg reflectors
H10H 20/858 - Means for heat extraction or cooling
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
6.
LIGHT EMITTING DEVICE FOR DISPLAY HAVING LED STACKS
A light emitting device for a display including a circuit board, a plurality of light emitting units arranged on the circuit board, each light emitting unit comprising a first LED stack including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, a first electrode disposed on the first conductivity type semiconductor layer, and a second electrode disposed on the second conductivity type semiconductor layer, a plurality of bump pads disposed between the plurality of light emitting units and the circuit board, and a bonding layer disposed between the second electrode and the circuit board, in which the second electrode has a side surface recessed inwardly with respect to a side surface of the light emitting unit to define a recessed portion, and the bonding layer is filled in the recessed portion.
H01L 25/13 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group
H10H 20/813 - Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
A multi-band light emitting diode is provided. The multi-band light emitting diode includes a first conductivity type semiconductor layer, a V-pit generation layer disposed on the first conductivity type semiconductor layer and having a first V-pit of a first inlet width, a stress relief layer disposed on the V-pit generation layer and providing a second V-pit of a second inlet width greater than the first inlet width of the V-pit on the first V-pit, an active layer disposed on the stress relief layer and including a first active layer region formed on a flat surface of the stress relief layer and a second active layer region formed in the second V-pit, and a second conductivity type semiconductor layer disposed on the active layer.
H10H 20/821 - Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H10H 20/815 - Bodies having stress relaxation structures, e.g. buffer layers
H10H 20/825 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
Deodorization of air, such as for an internal area of a vehicle, using ultraviolet light is described. Ultraviolet light can be emitted from an ultraviolet source and directed onto a surface including a photocatalyst. A processor can control the ultraviolet light emission from the ultraviolet source in response to an indication for deodorization. The deodorization components can be located in a housing which can be configured to be mounted to an internal surface of the vehicle.
Deodorization of air, such as for an internal area of a vehicle, using ultraviolet light is described. Ultraviolet light can be emitted from an ultraviolet source and directed onto a surface including a photocatalyst. A processor can control the ultraviolet light emission from the ultraviolet source in response to an indication for deodorization. The deodorization components can be located in a housing which can be configured to be mounted to an internal surface of the vehicle.
A light emitting device including a substrate, light emitting structures spaced apart from each other on the substrate, and a protective layer covering an inclined surface of a side surface of the light emitting device, in which the protective layer includes one or more passivation layers. Since the inclined surface is covered with the one or more passivation layers, the inclined surface is protected from an external environment instead of being exposed thereto.
A light emitting device including a substrate, light emitting structures spaced apart from each other on the substrate, and a protective layer covering an inclined surface of a side surface of the light emitting device, in which the protective layer includes one or more passivation 5 layers.
A light emitting device including a board, a first stacked structure configured to emit light having a first wavelength, a second stacked structure configured to emit light having a second wavelength, a third stacked structure configured to emit light having a third wavelength, a first connection electrode electrically connected to the first stacked structure, the second stacked structure, and the third stacked structure, and a protection material covering at least a portion of the first connection electrode, in which each of the first, second, and third stacked structures is configured to selectively emit light while being connected to the first connection electrode, and the protection material is configured to transmit at least 50% of light having the first wavelength, light having the second wavelength, and light having the third wavelength upon operation of each of the first, second, and third stacked structures.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
13.
LIGHT-EMITTING DEVICE PACKAGE AND MANUFACTURING METHOD THEREFOR
A light-emitting device package includes a substrate having a mounting region in which a light-emitting device chip is mounted. The light-emitting device package further includes a reflector and a cover enclosing the reflector. The reflector is disposed around the light-emitting device chip and having an opening through which the mounting region of the substrate is exposed. The reflector has elasticity to allow variation of a diameter thereof.
A flat bonding method of light emitting devices including bonding light emitting devices on a circuit board using a reflow process, and re-bonding at least a portion of the light emitting devices bonded on the circuit board using a press plate while pressing the portion of the light emitting devices.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
A substrate includes structures formed on a growth surface of the substrate. The structures are formed in a multi-periodic pattern, which includes a first plurality of groups of structures. Each group of structures has a characteristic spacing between adjacent structures in the group. Each group of structures is separated from an adjacent group of structures by a second characteristic spacing. The second characteristic spacing is at least 1.5 times larger than the first characteristic spacing.
A light-emitting diode (LED) unit for a display including a plurality of pixels each including a first light emitting cell, a second light emitting cell, and a third light emitting cell, each of the first, second, and third light emitting cells including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, a first wavelength converter configured to convert a wavelength of light emitted from the first light emitting cell, a second wavelength converter configured to convert a wavelength of light emitted from the second light emitting cell, in which the first, second, and third light emitting cells of each pixel share the first conductivity type semiconductor layer.
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
A semiconductor light emitting device including a first semiconductor layer, an active layer disposed thereon to emit ultraviolet light, a second semiconductor layer on the active layer, a contact electrode on the first semiconductor layer, a first electrode including a plurality of metal layers, a second electrode on the second semiconductor layer, a first bump on the first electrode and electrically coupled to the first semiconductor layer by the first electrode, and a second bump on the second electrode and electrically coupled to the second semiconductor layer by the second electrode, in which the first semiconductor layer is formed of AlGaN and has an energy larger than the ultraviolet wavelength energy generated in the active layer, first and second portions of the metal layers electrically contact the contact electrode and the first semiconductor layer, respectively, and at least some of the plurality of metal layers have irregular top surfaces.
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H10H 20/819 - Bodies characterised by their shape, e.g. curved or truncated substrates
H10H 20/825 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
H10H 20/831 - Electrodes characterised by their shape
A fluid processing module includes a main body having a flow channel extending in a first direction therein and allowing a fluid to flow therein, an adsorption filter disposed perpendicular to the first direction inside the main body, a photocatalyst filter disposed parallel to the first direction inside the main body, and a light source unit disposed inside the main body and emitting light towards the photocatalyst filter. The fluid flows at a first flow rate in the region of the flow channel having a first cross-sectional area. The fluid flows at a second flow rate in the region of the flow channel having a second cross-sectional area. The photocatalyst filter has effective deodorizing efficiency when the fluid flows at the second flow rate.
F25D 17/04 - Arrangements for circulating cooling fluidsArrangements for circulating gas, e.g. air, within refrigerated spaces for circulating gas, e.g. by natural convection
The present disclosure discloses a light emitting module including at least one light emitting device, the light emitting device comprising a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer.
The present invention provides a light-emitting module comprising at least one light-emitting device, which includes: a first conductive semiconductor layer; a second conductive semiconductor layer; an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; and an electron blocking layer disposed between the active layer and the second conductive semiconductor layer, wherein the electron blocking layer includes at least one shading area that is thinner than the adjacent area.
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
H10H 29/24 - Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group comprising multiple light-emitting semiconductor devices
H10H 29/41 - Insulating layers formed between the driving transistors and the LEDs
H10H 29/49 - Interconnections, e.g. wiring lines or terminals
H10H 29/853 - Encapsulations characterised by their shape
According to an aspect of the present invention, a light-emitting device may be provided, the light-emitting device comprising: a substrate; a plurality of light-emitting elements disposed on the upper surface of the substrate to generate light; a first electrode disposed between the substrate and the plurality of light-emitting elements and electrically connected to the plurality of light-emitting elements; and a second electrode spaced apart from the substrate and electrically connected to the plurality of light-emitting devices, wherein the first electrode and the second electrode are spaced apart from each other in the vertical direction by at least one light-emitting element from among the plurality of light-emitting elements and, when viewed from above, intersect at the one light-emitting element and extend.
H10H 29/24 - Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group comprising multiple light-emitting semiconductor devices
H10H 20/82 - Roughened surfaces, e.g. at the interface between epitaxial layers
H10H 20/831 - Electrodes characterised by their shape
H10H 20/84 - Coatings, e.g. passivation layers or antireflective coatings
A light emitting module including a printed circuit board, a light emitting device including a light source, and a diffuser, in which the light source includes a first conductivity type semiconductor layer, a mesa including an active layer and a second conductivity type semiconductor layer, and a transparent conductive oxide layer disposed on the mesa, a metal reflection layer electrically connected to the second conductivity type semiconductor layer, and a dielectric layer disposed between the second conductivity type semiconductor layer and the metal reflection layer, the second conductivity type semiconductor layer includes an impurity having a concentration profile with a region where a concentration of the impurity varies along a thickness direction, and the metal reflection layer includes a region spaced apart from the second conductivity type semiconductor layer by the dielectric layer including a region having a thickness in a range between 200 nm and 1000 nm.
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
H10H 20/814 - Bodies having reflecting means, e.g. semiconductor Bragg reflectors
H10H 20/841 - Reflective coatings, e.g. dielectric Bragg reflectors
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
23.
LED LIGHTING APPARATUS HAVING STERILIZING FUNCTION
A lighting apparatus is disclosed. The lighting apparatus according to one embodiment of the present disclosure includes: a white light emitting device including at least one first light emitting diode and a wavelength converter to implement white light; and at least one second light emitting diode emitting light suitable for producing a cell activating substance, wherein the first light emitting diode emits light having a central wavelength in a range of about 300 nm to about 420 nm, the second light emitting diode emits light having a central wavelength in a range of about 605 nm to about 935 nm, the wavelength converter includes a plurality of wavelength conversion substances to convert light of the first light emitting diode into white light, the lighting apparatus emits the white light implemented in the white light emitting device and light generated by the second light emitting diode to the outside, and, in irradiance spectrum of the white light implemented in the white light emitting device, irradiance of the central wavelength of light emitted from the first light emitting diode is smaller than that of a peak wavelength of blue light emitted from the wavelength conversion substance.
F21K 9/65 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction specially adapted for changing the characteristics or the distribution of the light, e.g. by adjustment of parts
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A light module including a circuit substrate and a light emitter, the light emitter including a light source configured to generate light and including a first epitaxial layer, a second epitaxial layer, and an active layer, an insulation layer covering the light source, a first electrode electrically connected to the first epitaxial layer, a light guide configured to guide light generated from the light source, a transparent material covering the light source, and an angle controller disposed on the transparent material, in which the light guide has a guide hole filled with the transparent material, and a refractive index of the light guide is different from that of the light source.
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
G09G 3/3225 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10H 20/821 - Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
H10H 20/832 - Electrodes characterised by their material
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
25.
High Efficiency Light Emitting Device, Unit Pixel Having the Same, and Displaying Apparatus Having the Same
A light emitting device is a micro-scale light emitting device including a semiconductor stack, an insulation layer, and a metal reflection layer. The semiconductor stack includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. The insulation layer covers upper and side surfaces of the semiconductor stack. The metal reflection layer is disposed on the insulation layer, and covers at least a portion of the side surface of the semiconductor stack. The insulation layer includes a distributed Bragg reflector.
H10H 20/814 - Bodies having reflecting means, e.g. semiconductor Bragg reflectors
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10H 20/832 - Electrodes characterised by their material
A display panel including a circuit board having pads, light emitting devices electrically connected to the pads and arranged on the circuit board, each light emitting device having a first surface facing the circuit board and a second surface opposite to the first surface, a buffer material layer disposed between the circuit board and the light emitting devices to fill a space between the circuit board and the light emitting devices, and a cover layer covering the second surface of the light emitting devices, in which the buffer material layer is disposed under the first surfaces of the light emitting devices and has grooves in a region between adjacent light emitting devices, a portion of a top surface of the buffer material layer is disposed between adjacent light emitting devices, and the cover layer fills the grooves of the buffer material layer.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A light emitting apparatus includes a substrate, a cover layer disposed on an upper surface of the substrate and forming at least one opening that exposes at least a region of the upper surface of the substrate, a light emitting device disposed on the upper surface of the substrate exposed through the opening, and a molding layer covering the cover layer and the light emitting device.
H10H 29/853 - Encapsulations characterised by their shape
H10H 29/34 - Active-matrix LED displays characterised by the geometry or arrangement of subpixels within a pixel, e.g. relative disposition of the RGB subpixels
H10H 29/855 - Optical field-shaping means, e.g. lenses
28.
SINGLE CHIP MULTI BAND LED AND APPLICATION THEREOF
A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on a driving current.
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
F21S 6/00 - Lighting devices intended to be free-standing
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10H 20/821 - Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
H10H 20/825 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
29.
LIGHT-EMITTING DEVICE AND LIGHT-EMITTING MODULE COMPRISING SAME
Disclosed is a light-emitting module comprising at least one light-emitting device, the light-emitting device comprising: a first conductive semiconductor layer; a second conductive semiconductor layer; an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; and an electron blocking layer disposed between the active layer and the second conductive semiconductor layer, wherein the electron blocking layer comprises one or more shading areas which are thinner than the adjacent areas.
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
H10H 29/24 - Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group comprising multiple light-emitting semiconductor devices
H10H 20/825 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H10H 20/815 - Bodies having stress relaxation structures, e.g. buffer layers
H10H 20/816 - Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
31.
LIGHT EMITTING MODULE AND DISPLAY DEVICE INCLUDING SAME
A light emitting device according to the present invention comprises: a substrate; a cover layer disposed on the upper surface of the substrate and having at least one opening exposing at least a partial region of the upper surface of the substrate; a light emitting element disposed on the upper surface of the substrate exposed through the opening; and a molding layer covering the cover layer and the light emitting element.
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
H10H 20/84 - Coatings, e.g. passivation layers or antireflective coatings
A light emitting module includes at least one light emitting device, wherein the light emitting device includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, an active layer interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and an electron blocking layer disposed between the active layer and the second conductivity type semiconductor layer, and the electron blocking layer includes at least one shading region having a lower thickness than an adjacent region.
H10H 20/816 - Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H10H 20/825 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
The present invention relates to an implant packaging container comprising: a body portion comprising an inner wall that defines a space for containing an implant; a cap separably coupled to one side of the body portion; a securing portion for fixing the position of the implant inside the body portion; a bottom portion coupled to the body portion so as to face the cap; and a body portion reflector provided on the inner wall of the body portion so as to reflect ultraviolet rays emitted from near the bottom portion. In addition, the present invention relates to an implant packaging container wherein, before an implant is installed in the patient's jawbone, the hydrophilicity of a fixture is improved in a simple and efficient manner such that the biocompatibility of the fixture with a biological tissue is improved, the time necessary for coupling with the bone during implantation is shortened, thereby reducing the pain that the patient might feel, and the implant remains in a sterilized condition until being installed in the patient's jawbone.
B65D 51/26 - Closures not otherwise provided for combined with auxiliary devices for non-closing purposes with means for keeping contents in position, e.g. resilient means
B65D 81/28 - Applications of food preservatives, fungicides, pesticides or animal repellants
B65D 81/30 - Adaptations for preventing deterioration or decay of contentsApplications to the container or packaging material of food preservatives, fungicides, pesticides or animal repellants by excluding light or other outside radiation
34.
NITRIDE BASED LONG WAVELENGTH LIGHT EMITTING DIODE
A red light emitting apparatus includes a first conductivity type semiconductor layer; an active region including a barrier layer and a well layer; a strain-control layer disposed between the first conductivity type semiconductor layer and the active region; a superlattice layer disposed between the strain-control layer and the active region; a second conductivity type semiconductor layer disposed on the active region; and an electron-blocking layer disposed between the active region and the second conductivity type semiconductor layer, in which the first conductivity type semiconductor layer and the well layer are expressed by a given formula, and an index value representing a band gap of the well layer and an index value representing a band gap of the first conductivity type semiconductor layer a given equation.
A light emitting diode pixel for a display includes a first subpixel including a first LED sub-unit, a second subpixel including a second LED sub-unit, a third subpixel including a third LED sub-unit, and a bonding layer overlapping the first, second, and third subpixels, in which each of the first, second, and third LED sub-units includes a first type of semiconductor layer and a second type of semiconductor layer, each of the first, second, and third LED sub-units is disposed on a different plane, and light generated from the second subpixel is configured to be emitted to an outside of the light emitting diode pixel by passing through a lesser number of LED sub-units than light generated from the first subpixel and emitted to the outside.
H01L 25/13 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A light emitting device including a printed circuit board having a front surface and a rear surface, at least one light emitting source disposed on the front surface to emit light in a direction away from the printed circuit board, and a molding layer surrounding the light emitting source, in which the light emitting source includes a light emitting structure, a substrate disposed on the light emitting structure, and a plurality of bump electrodes disposed between the light emitting structure and the printed circuit board, the molding layer covers an upper surface of the substrate and a fine concavo-convex part is formed on a surface of the molding layer exposed to the outside, and the molding layer has a first thickness to transmit at least a fraction of light emitted from the light emitting source, and includes a filler to change a direction of emitted light.
H10H 20/853 - Encapsulations characterised by their shape
H01L 25/13 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group
H10H 20/813 - Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
H10H 20/854 - Encapsulations characterised by their material, e.g. epoxy or silicone resins
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
37.
LIGHT-EMITTING DEVICE AND LIGHT-EMITTING MODULE COMPRISING SAME
According to an embodiment of the present invention, a light-emitting device comprises a semiconductor layer, an insulating layer, a first electrode and a second electrode. The semiconductor layer includes: a first window layer doped with a first dopant; a second window layer doped with a second dopant; and an active layer arranged between the first window layer and the second window layer. In addition, the insulating layer covers the semiconductor layer and includes an opening exposing a region of the first window layer and/or the second window layer. The first electrode is electrically connected to the first window layer, and the second electrode is electrically connected to the second window layer. Here, the first window layer protrudes in the direction in which the first electrode is arranged, and includes an electrode arrangement region in which the first electrode is arranged. Additionally, the angle formed between the top surface and the side surfaces in at least one region of the electrode arrangement region is an acute angle.
A pixel module includes a circuit board, a plurality of unit pixels arranged on the circuit board, and a molding member covering the plurality of unit pixels. The molding member includes a light diffusion layer and a black molding layer covering the light diffusion layer.
H10H 20/855 - Optical field-shaping means, e.g. lenses
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A light emitting device includes a semiconductor layer, an insulation layer, a first electrode, and a second electrode. The semiconductor layer may include a first window layer doped with a first dopant, a second window layer doped with a second dopant, and an active layer disposed between the first window layer and the second window layer. The insulation layer may cover the semiconductor layer and may include an opening exposing a region of at least a window layer of the first window layer or the second window layer. The first electrode may be electrically connected to the first window layer. The second electrode may be electrically connected to the second window layer. The first window layer may protrude in a direction in which the first electrode is disposed and may include an electrode placement region in which the first electrode is disposed. At least a region of the electrode placement region may have an acute angle defined between upper and side surfaces thereof.
Disclosed herein are a light source module for plant cultivation and a light device including the same. The light source module for plant cultivation may include at least one main light source emitting white light. The white light from the main light source is provided to a plant during cultivation to improve the growth and phytochemical content of the plant. In addition, the white light may have peak wavelengths of 430 nm or less, 440 nm to 460 nm, 510 nm to 530 nm, and 600 nm to 630 nm.
F21K 9/64 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
A01G 7/04 - Electric or magnetic treatment of plants for promoting growth
F21K 9/62 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using mixing chambers, e.g. housings with reflective walls
A deep UV light emitting diode includes a substrate, an n-type semiconductor layer located on the substrate, a mesa disposed on the n-type semiconductor layer, and including an active layer and a p-type semiconductor layer, an n-ohmic contact layer in contact with the n-type semiconductor layer, a p-ohmic contact layer in contact with the p-type semiconductor layer, an n-bump electrically connected to the n-ohmic contact layer, and a p-bump electrically connected to the p-ohmic contact layer. The mesa includes a plurality of vias exposing a first conductivity type semiconductor layer.
An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.
H10H 20/811 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
H10F 30/222 - Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
H10F 30/223 - Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
H10F 77/124 - Active materials comprising only Group III-V materials, e.g. GaAs
H10F 77/14 - Shape of semiconductor bodiesShapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H10H 20/816 - Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
H10H 20/824 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
H10H 20/825 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
43.
Display device having light emitting stacked structure
A display device includes a plurality of pixel tiles spaced apart from each other, each of the pixel tiles including a substrate and a plurality of light emitting stacked structures disposed on the substrate, in which a distance between two adjacent light emitting stacked structures in the same pixel tile is substantially equal to a shortest distance between two adjacent light emitting stacked structures of different pixel tiles.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
H10H 20/813 - Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
H10H 20/824 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
H10H 20/832 - Electrodes characterised by their material
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H10H 20/82 - Roughened surfaces, e.g. at the interface between epitaxial layers
44.
DISPLAY DEVICE HAVING LIGHT EMITTING STACKED STRUCTURE
A display apparatus including a plurality of pixel regions disposed on a support substrate, each of the pixel regions including a plurality of subpixel stacks including a first epitaxial stack, a second epitaxial stack, and a third epitaxial stack, in which light generated from the first epitaxial stack is to be emitted to the outside of the display apparatus through the second and third epitaxial stacks, light generated from the second epitaxial stack is to be emitted to the outside of the display apparatus through the third epitaxial stack, during operation, one of the subpixel stacks within each pixel region is configured to be selected and driven, and at least one subpixel stack further includes an electrode disposed between the first epitaxial stack and the support substrate to be in ohmic contact with the first epitaxial stack.
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10H 20/813 - Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
H10H 20/82 - Roughened surfaces, e.g. at the interface between epitaxial layers
H10H 20/824 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
H10H 20/832 - Electrodes characterised by their material
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
A light emitting diode including a substrate having a first area and a second area defined by an isolation groove line, a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer, an active layer, a first electrode pad electrically connected to the lower semiconductor layer, a second electrode pad electrically connected to the upper semiconductor layer, and a connecting portion electrically connecting the semiconductor stack disposed in the first and second areas to each other, and including a first portion, a second portion, and a third portion extending from a second distal end of the first portion, in which the isolation groove line is disposed between the first and second electrode pads and exposes the substrate, the first portion extends along a first direction substantially parallel to an extending direction of the isolation groove line, and the second and third portions extend in a second direction crossing the first direction.
H10H 20/816 - Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H10H 20/814 - Bodies having reflecting means, e.g. semiconductor Bragg reflectors
H10H 20/825 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
H10H 20/831 - Electrodes characterised by their shape
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
H10H 29/10 - Integrated devices comprising at least one light-emitting semiconductor component covered by group
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
46.
LIGHT EMITTING DEVICE PACKAGE AND DISPLAY DEVICE HAVING THE SAME
A display device including a base substrate having a front surface and a rear surface, and including a first recess portion recessed from the front surface, a plurality of outer electrodes disposed on the base substrate, a light emitting device disposed in the first recess portion and configured to emit light in a direction away from the base substrate, the light emitting device including a light emitting structure electrically connected to the outer electrodes.
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10D 86/40 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
H10D 86/60 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
H10H 20/813 - Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
H10H 20/831 - Electrodes characterised by their shape
H10H 20/84 - Coatings, e.g. passivation layers or antireflective coatings
A footwear treatment system can include a pair of elongate supports, each of which can include a cylindrical footwear extension region configured to be inserted into and hold a footwear item. The system can emit ultraviolet light that is directed into an interior of the footwear item using the corresponding elongate support. The system also can circulate air within the interior of the footwear item using the corresponding elongate support and filter the circulating air. As a result of the treatment, one or more microorganisms and/or compounds associated with odor can be reduced to an acceptable level.
The disclosed technology relates to a light emitting device and a light emitting apparatus having the same.
The disclosed technology relates to a light emitting device and a light emitting apparatus having the same.
The disclosed technology discloses a light emitting apparatus 10 including a substrate 100 and a plurality of light emitting devices 200 disposed on the substrate 100, and at least one substrate common electrode 110 and a plurality of substrate individual electrodes 120 formed on the substrate 100, wherein N light emitting devices 2001˜200N (N is a natural number greater than or equal to 2) are commonly connected to the substrate common electrode 110 to form a light emitting group G.
H10H 29/49 - Interconnections, e.g. wiring lines or terminals
H10H 29/34 - Active-matrix LED displays characterised by the geometry or arrangement of subpixels within a pixel, e.g. relative disposition of the RGB subpixels
49.
LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE COMPRISING SAME
Disclosed is a light-emitting element comprising: a first window layer doped with a first conductive dopant; a second window layer doped with a second conductive dopant; and an active layer disposed between the first window layer and the second window layer so as to generate light, wherein the active layer comprises at least two quantum barrier layers, at least one quantum well layer, and a supporting layer disposed between the quantum well layer and the quantum barrier layers.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
50.
Light emitting device and apparatus having the same
The disclosed technology discloses a light emitting device, which includes a first window layer doped with a first conductivity type dopant, a second window layer doped with a second conductivity type dopant, and an active layer disposed between the first window layer and the second window layer to generate light, in which the active layer includes at least two quantum barrier layers, at least one quantum well layer, and an aid layer disposed between the quantum well layer and the quantum barrier layer.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
51.
LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
A light emitting device includes a substrate; a pattern of a plurality of protrusions protruding from the substrate; a first semiconductor layer provided on the substrate; an active layer provided on the first semiconductor layer; and a second semiconductor layer provided on the active layer, in which each of the protrusions includes a first layer formed integrally with the substrate and protruding from an upper surface of the base substrate; and a second layer provided on the first layer and formed of a material different from that of the first layer.
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
52.
LIGHT EMITTING DEVICE FOR DISPLAY AND LED DISPLAY APPARTUS HAVING THE SAME
A light emitting device including first, second, and third light emitting stacks each including first and second conductivity type semiconductor layers, a first lower contact electrode in ohmic contact with the first light emitting stack, and second and third lower contact electrodes respectively in ohmic contact with the second conductivity type semiconductor layers of the second and third light emitting stacks, in which the first lower contact electrode is disposed between the first and second light emitting stacks, the second and third lower contact electrodes are disposed between the second and third light emitting stacks, and the first, second, and third lower contact electrodes include transparent conductive oxide layers.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/54 - Encapsulations having a particular shape
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
A lighting device including at least one first light source configured to emit a visible light through a first light emitting surface, at least one second light source spaced apart from the first light source and configured to emit light having a wavelength for sterilization through a second light emitting surface, and a housing having a bottom portion, on which the first and second light sources are disposed. The housing can include at least one sidewall portion connected to the bottom portion to enclose the first light source and the second light source in one common area, in which the first and second light emitting surfaces face substantially the same direction, and both the first light emitting surface and the second light emitting surface can be disposed at a different elevation from the bottom portion of the housing.
A light source module includes at least one substrate, at least one main light source and at least one auxiliary light source. The at least one main light source and the at least one auxiliary light source are disposed on the at least one substrate. The main light source comprises a first main light emitter configured to emit a first main light having a first number of peak wavelengths and a second main light emitter configured to emit a second main light having a second number of peak wavelengths. In addition, the auxiliary light source is configured to emit a third auxiliary light having a third number of peak wavelengths. The first number of peak wavelengths can be different from the second number of peak wavelengths. A peak wavelength of the second main light can be longer than all of the peak wavelengths of the first main light.
According to one aspect of the present invention, a display device can be provided, the display device comprising: a display substrate; a plurality of light-emitting diodes supported on the display substrate and generating light; and electrode bodies electrically connecting the display substrate and the plurality of light-emitting diodes, wherein the difference between the peak wavelengths of light of the light-emitting diodes is at most 5 nm.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/36 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
A light emitting device and a light emitting apparatus including the same are disclosed. A light emitting device includes a substrate, a plurality of protrusions protruding from one surface of the substrate, and a light emitting structure disposed on the substrate.
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Disclosed is a light emitting apparatus. The light emitting apparatus includes a substrate, a plurality of emitters disposed on the substrate and configured to emit light, at least one color-determining layer disposed on the plurality of emitters, and a barrier layer surrounding the color-determining layer.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
According to one aspect of the present disclosure, there may be provided a display device including: a display board; a plurality of light sources supported by the display board to generate light; and an electrode body electrically connecting the display board and the plurality of light sources, a peak wavelength difference of the light emitted from the plurality of light sources being 5 nm or less.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A display device including a substrate, a light emitting stacked structure disposed on the substrate and including a plurality of epitaxial sub-units disposed one over another, a first adhesive layer bonding the epitaxial sub-units to the substrate; and a line part disposed on the substrate and configured to apply a light emitting signal to each of the epitaxial sub-units, in which the light emitting stacked structure is configured to provide light having various colors by a combination of light emitted from each of the epitaxial sub-units, and the first adhesive layer includes a conductive and non-transparent material.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
A light emitting device including a first LED sub-unit having a thickness in a first direction, a second LED sub-unit disposed on a portion of the first LED sub-unit in the first direction, each of the first and second LED sub-units comprising a first-type semiconductor layer, a second-type semiconductor layer, and an active layer, a reflective electrode disposed adjacent to the first LED sub-unit and electrically connected to the first-type semiconductor layer of the first LED sub-unit, and a first ohmic electrode forming ohmic contact with the second-type semiconductor layer of the first LED sub-unit, in which the active layer of the first LED sub-unit is configured to generate light, includes AlxGa(1-x-y)InyP (0≤x≤1, 0≤y≤1), and overlaps the active layer of the second LED sub-unit in the first direction, and the active layer of the second LED sub-unit includes the same material as the active layer of the first LED sub-unit.
H01L 25/13 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
A pixel device is provided to include: a first light emitting source including a first light emitting structure including a first-1 semiconductor layer, a first active layer, and a first-2 semiconductor layer on a first base; a second light emitting source including a second light emitting structure including a second-1 semiconductor layer, a second active layer, and a second-2 semiconductor layer on the first light emitting source; a third light emitting source including a third light emitting structure including a third-1 semiconductor layer, a third active layer, and a third-2 semiconductor layer on the second light emitting source; a common electrode electrically connected to the first-1 semiconductor layer, the second-1 semiconductor layer, and the third-1 semiconductor layer; a first electrode electrically connected to the first-2 semiconductor layer; a second electrode electrically connected to the second-2 semiconductor layer; and a third electrode electrically connected to the third-2 semiconductor layer.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
63.
LED DISPLAY PANEL AND LED DISPLAY APPARATUS HAVING THE SAME
A display panel including a circuit board having pads thereon, and a plurality of pixel regions arranged on the circuit board, each of the pixel regions including a first LED stack disposed on the circuit board, a first bonding layer disposed between the first LED stack and the circuit board, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, first through-vias passing through the first LED stack and the first bonding layer, second through-vias passing through the second LED stack, and third through-vias passing through the third LED stack, in which the first through-vias pass through the first LED stack and the first bonding layer, and are connected to the pads of the circuit board.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
64.
STERILIZATION MODULE, WATER PURIFICATION DEVICE, AND SYSTEM COMPRISING WATER PURIFICATION DEVICE
In one aspect, a sterilization apparatus is provided to include a flow channel body comprising an inflow unit configured to provide an inflow channel through which water flows in one direction, a discharge unit configured to provide a discharge channel through which water is discharged, and a bypass channel unit configured to provide a bypass channel through which water bypasses in a different direction from the direction of the water flowing in the inflow unit; a mounting unit formed on the flow channel body and configured to provide an installation space connected to the bypass channel, a UV light emitting unit disposed in the installation space and configured to emit UV light towards the bypass channel; and a holder coupled to the mounting unit and securing the UV light emitting unit inside the mounting unit.
A light source includes a controller configured to turn on or off a plurality of light sources depending on a light period. The controller can be configured to turn on the light sources during each of a plurality of light periods such that the light sources emit a light having a spectrum with a plurality of peaks toward the plant. At least one light period can include a first period and a second period and the first period preceding or following the second period. The controller can adjust the spectrum of the light between the first period and the second period and/or during different light periods.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
A light emitting device including a first LED stack, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, and a common electrode electrically connected to a first conductivity type semiconductor layer of each of the first, second, and third LED stacks, in which the common electrode includes a step in at least one of the first, second and third LED stacks.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
67.
LIGHT EMITTING MODULE HAVING LIGHT EMITTING DEVICE AND DISPLAY APPARATUS HAVING SAME
A light emitting module according to an embodiment includes: a base plate; a light emitting device array substrate disposed on the base plate, and including a plurality of light emitting devices; a molding layer covering the light emitting devices; a circuit board having one end electrically connected to the light emitting device array substrate; a connector electrically connected to an opposite end of the circuit board; and a reinforcement plate disposed under the connector.
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/54 - Encapsulations having a particular shape
A light emitting device for a display including a first LED stack configured to generate light having a first peak wavelength, a second LED stack disposed under the first LED stack, and configured to generate light having a second peak wavelength, a third LED stack disposed under the second LED stack, and configured to generate light having a third peak wavelength; and a floating reflection layer disposed over the first LED stack, in which the first peak wavelength is longer than the second and third peak wavelengths, the first LED stack has a roughened surface to increase the luminous intensity of the light generated in the first LED stack entering the second LED stack, and the floating reflection layer has a high reflectance of 80% or more over light having the first peak wavelength.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
A display apparatus including a display substrate, light emitting devices disposed on the display substrate, circuit electrodes disposed between the light emitting devices and the display substrate, and a transparent layer covering the light emitting devices and the circuit electrodes, in which at least one of the light emitting devices includes a first LED sub-unit configured to emit light having a first wavelength, a second LED sub-unit adjacent to the first LED sub-unit and configured to emit light having a second wavelength, a third LED sub-unit adjacent to the second LED sub-unit and configured to emit light having a third wavelength, and a substrate disposed on the third LED sub-unit, in which a difference in refractive indices between the 10 transparent layer and air is less than a difference in refractive indices between the substrate and a semiconductor layer of the third LED sub-unit.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
A light emitting device including a substrate, a first conductivity-type semiconductor layer, a mesa including a second conductivity-type semiconductor layer and an active layer, first and second contact electrodes respectively contacting the first and second conductivity-type semiconductor layers, a passivation layer covering the first and second contact electrodes, the mesa, and including first and second openings, and first and second bump electrodes electrically connected to the first and second contact electrodes, respectively, in which the first and second bump electrodes are disposed on the mesa, the passivation layer is disposed between the first bump electrode and the second contact electrode, the first contact electrode includes a reflective material, and a portion of the first opening is surrounded with a side surface of the mesa, and another portion of the first opening is not surrounded with the side surface of the mesa.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
71.
LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE COMPRISING SAME
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
72.
LIGHT EMITTING DEVICE FOR DISPLAY AND DISPLAY APPARATUS HAVING THE SAME
A method of fabricating a light emitting device for a display, the method including the steps of growing a first LED stack on a first growth substrate, the first LED stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, growing a second LED stack on a second growth substrate, the second LED stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, bonding the second LED stack to a first temporary substrate, removing the second growth substrate from the second LED stack, bonding the second LED stack to the first LED stack, and removing the first temporary substrate from the second LED stack.
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
G06F 1/16 - Constructional details or arrangements
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
73.
LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
A light emitting device includes a first electrode pad and a second electrode pad, a first semiconductor layer disposed on an upper region of an active layer, a second semiconductor layer disposed on an upper region of the second electrode pad, the active layer disposed on an upper region of the second semiconductor layer, a first contact layer disposed on an upper region of the first semiconductor layer, and a first electrode pad disposed on an upper region of the first contact layer to be electrically connected to the first semiconductor layer through the first contact layer. An upper surface of the first semiconductor layer located in a non-light emitting region is placed higher than a light emitting surface corresponding to the upper surface of the first semiconductor layer located in a light emitting region, the non-light emitting region being a region in which the first contact layer is disposed.
The present invention relates to a light-emitting element and a light-emitting device comprising same. The light-emitting device according to an embodiment of the present invention comprises: first to third light-emitting devices, which include a substrate, a plurality of protrusions protruding from one surface of the substrate, and a light-emitting structure disposed on the substrate; and a circuit board on which the first to third light-emitting devices are mounted. Each of the first to third light-emitting elements includes a first conductive semiconductor layer, an active layer of a multiple quantum well structure, and a second conductive semiconductor layer, and the number of pairs of barrier layers and well layers constituting the active layer of the first light-emitting element is different from the number of pairs of barrier layers and well layers constituting the active layer of the second light-emitting element.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
75.
LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME
The present invention relates to a light-emitting element and a method for manufacturing same. According to an embodiment, the light-emitting element may comprise a second electrode pad, a second semiconductor layer, an active layer, a first semiconductor layer, a first contact layer, and a first electrode pad. The second semiconductor layer may be formed on the second electrode pad and electrically connected to the second electrode pad. The active layer may be formed on the second semiconductor layer so as to generate and emit light. The first semiconductor layer may be formed on the active layer. The first contact layer may be formed on the first semiconductor layer. In addition, the first electrode pad may be formed on the first contact layer and electrically connected to the first semiconductor layer through the first contact layer. In addition, the upper surface of the first semiconductor layer located in a non-light emitting region may be located higher than the upper surface of the first semiconductor layer located in a light-emitting region which is a light-emitting surface.
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
76.
UNIT PIXEL AND DISPLAYING APPARATUS INCLUDING THE UNIT PIXEL
A unit pixel and a displaying apparatus including the unit pixel are provided. The unit pixel includes a transparent substrate, a plurality of light emitting devices arranged on the transparent substrate, a light blocking layer disposed between the transparent substrate and the light emitting devices, and having at least one window, and a semi-transmissive layer disposed between at least one of the plurality of light emitting devices and the transparent substrate to overlap with the window at least partially.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The active layer emits light having at least two peak wavelengths at a single chip level.
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
78.
LIGHT EMITTING DEVICE FOR DISPLAY AND LED DISPLAY APPARATUS HAVING THE SAME
A light emitting device including a first light emitting stack, a second light emitting stack, and a third light emitting stack each including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, a first adhesive layer bonding the first light emitting stack and the second light emitting stack, and a second adhesive layer bonding the second light emitting stack and the third light emitting stack, in which the second light emitting stack is disposed between the first light emitting stack and the third light emitting stack, and one of the first adhesive layer and the second adhesive layer electrically connects adjacent light emitting stacks.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/56 - Materials, e.g. epoxy or silicone resin
79.
Semiconductor Heterostructure with Improved Light Emission
A semiconductor heterostructure for an optoelectronic device with improved light emission is disclosed. The heterostructure can include a first semiconductor layer having a first index of refraction n1. A second semiconductor layer can be located over the first semiconductor layer. The second semiconductor layer can include a laminate of semiconductor sublayers having an effective index of refraction n2. A third semiconductor layer having a third index of refraction n3 can be located over the second semiconductor layer. The first index of refraction n1 is greater than the second index of refraction n2, which is greater than the third index of refraction n3.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/36 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
80.
UNIT PIXEL HAVING LIGHT EMITTING DEVICE AND DISPLAYING APPARATUS
A unit pixel includes a transparent substrate, a plurality of light emitting devices arranged on the transparent substrate, and an optical layer disposed between the light emitting devices and the transparent substrate and transmitting light emitted from the light emitting devices. The transparent substrate has a concavo-convex pattern on a surface facing the light emitting devices.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 33/54 - Encapsulations having a particular shape
The present invention relates to a pixel element for a display, and a display device having same. According to one embodiment, the pixel element comprises: a first light-emitting structure which is formed on a first base, and in which a 1-1 semiconductor layer, a first active layer and a 1-2 semiconductor layer are stacked; a second light-emitting structure which is formed on a first light-emitting unit, and in which a 2-1 semiconductor layer, a second active layer and a 2-2 semiconductor layer are stacked; a third light-emitting structure which is formed on a second light-emitting unit, and in which a 3-1 semiconductor layer, a third active layer, and a 3-2 semiconductor layer are stacked; a common electrode electrically connected to the 1-1 semiconductor layer, the 2-1 semiconductor layer and the 3-1 semiconductor layer at the same time; a first electrode electrically connected to the 1-2 semiconductor layer; a second electrode electrically connected to the 2-2 semiconductor layer; and a third electrode electrically connected to the 3-2 semiconductor layer. The common electrode and the first electrode are formed along one side surface of the 2-1 semiconductor layer and one side surface of the 3-1 semiconductor layer so as to be stair-structured.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/56 - Materials, e.g. epoxy or silicone resin
A light emitting module according to an embodiment includes: a base plate; a light emitting element array substrate arranged on the base plate and including a plurality of light emitting elements; a molding part covering the light emitting elements; a circuit board having one end electrically connected to the light emitting element array substrate; a connector electrically connected to the other end of the circuit board; and a reinforcing plate arranged under the connector.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
A plant cultivation light source includes a substrate and a first group of light sources. The first group of light sources includes a plurality of light sources disposed on the substrate, and a light source including a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer. The plurality of light sources operates to emit lights having different wavelength bands and includes a first light source that emits first light having an area of at least about 55% compared with an area of a normalized solar spectrum, a second light source that emits second light having a wavelength for cryptochrome, and a third light source that emits third light having a wavelength for phytochrome.
A light emitting device for a display including a first LED stack, a second LED stack disposed under the first LED stack, a third LED stack disposed under the second LED stack, and including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, a surface protection layer at least partially covering side surfaces of the first LED stack, the second LED stack, or the third LED stack, a first bonding layer interposed between the second LED stack and the third LED stack, a second bonding layer interposed between the first LED stack and the second LED stack, lower buried vias passing through the second LED stack and the first bonding layer, and electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer of the third LED stack, respectively, and upper buried vias passing through the first LED stack.
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
An optoelectronic device with reduced optical losses is disclosed. The optoelectronic device includes a set of n-type layers; an active region that includes at least one quantum well configured to generate radiation at a peak emitted wavelength and at least one barrier; and a set of p-type layers disposed on the active region. A reflective layer can be disposed on the set of p-type layers. The set of p-type layers can included an electron blocking region, and a thickness of the electron blocking region can be 80% or less than a thicking of the set of p-type layers. Additionally, a thickness of the at least one barrier can be 20% or less than the thickness of the set of p-type layers.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
A light-emitting diode according to an embodiment comprises: a substrate; a first conductive-type semiconductor layer disposed on the substrate; a mesa disposed on the first conductive-type semiconductor layer and including an active layer and a second conductive-type semiconductor layer; an ohmic contact layer disposed on the second conductive-type semiconductor layer and formed by islands which are spaced apart from each other; a dielectric layer covering the ohmic contact layer and having openings through which the respective islands are exposed; a metal reflective layer covering the dielectric layer and electrically connected to the islands through the openings of the dielectric layer; a lower insulating layer covering the metal reflective layer and having an opening through which the metal reflective layer is exposed; and first and second bump pads disposed on the lower insulating layer and electrically connected to the first and second conductive-type semiconductor layers, respectively.
A light emitting device including a first light emitting part including a first n-type semiconductor layer, a first active layer, a first p-type semiconductor layer, and a first transparent electrode, a second light emitting part disposed over the first light emitting part and including a second n-type semiconductor layer, a second active layer, a second p-type semiconductor layer, and a second transparent electrode, and a third light emitting part disposed over the second light emitting part and including a third n-type semiconductor layer, a third active layer, a third p-type semiconductor layer, and a third transparent electrode, in which the light emitting device has substantially a quadrangular shape when viewed from the top, and has first to fourth corners.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
88.
LED UNIT FOR DISPLAY AND DISPLAY APPARATUS HAVING THE SAME
A display apparatus including a substrate, and pixel regions and at least one separation region between the pixel regions, each pixel region including a first LED stack, a second LED stack adjacent to the first LED stack, a third LED stack adjacent to the second LED stack and each having a side surface forming a first angle, a second angle, and a third angle with the substrate, respectively, electrode pads electrically connected to the first, second, and third LED stacks, and an insulation layer disposed on at least one of the first, second, and third LED stacks, in which the first LED stack is configured to emit light having a longer peak wavelength than that emitted from the second and third LED stacks, and the first angle is different from the second and third angles.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
A unit pixel is provided. The unit pixel includes a transparent substrate, a first light blocking layer disposed on the transparent substrate and having windows that transmit light, an adhesive layer covering the first light blocking layer, a plurality of light emitting devices disposed on the adhesive layer to be arranged on the windows, and a second light blocking layer covering side surfaces of the light emitting devices.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
A light source for eye wellness configured to emit light having a wavelength range from 380 nm to 780 nm, and has a spectrum area that overlaps at least 55% of an area of a normalized solar spectrum, in which a valley wavelength of the light has a deviation equal to or less than 0.15 form the normalized solar spectrum in the wavelength range from 460 nm to 490 nm, and a color temperature of the light is in a range of 2600K to 7000K.
A light emitting module including a light source configured to irradiate ultraviolet light, a board on which the light source is disposed, a tube accommodating the board and including a transparent region to transmit the ultraviolet light emitted from the light source, a first base coupled to one side of the tube, a second base coupled to the other side of the tube, a fixation groove disposed in the tube and connected to at least one of the first and second bases, in which the board is coupled to be inserted into the fixation groove, and the fixation groove is spaced apart from a center of the first base when viewed in a cross-section perpendicular to a length direction of the tube.
A light emitting device including a substrate having a first region and a second region, a light emitting stack including vertically stacked semiconductor layers disposed on the first region of the substrate, at least one pillar disposed on the second region of the substrate and laterally spaced apart from the light emitting stack, and at least one electrode extending from the first region to the second region of the substrate and electrically connecting the light emitting stack to the at least one pillar, in which the at least one pillar is disposed on the at least one electrode, respectively.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
A light emitting device including an insulation unit, a light emitting region including first, second, and third LED stacks each including first and second conductivity type semiconductor layers, a first pillar electrically connected to the first conductivity type semiconductor layers of the first, second, and third LED stacks, and a second pillar, a third pillar, and a fourth pillar electrically connected to the second conductivity type semiconductor layers of the first, second, and third LED stacks, respectively, an intermediate first connector and a lower first connector respectively electrically connecting the first conductivity type semiconductor layers of the second LED stack and the third LED stack to the first pillar, in which the insulation unit have four corners, and the first, second, third, and fourth pillars are disposed near the four corners covering a side surface of the insulation unit, respectively.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
94.
LIGHT EMITTING DEVICE AND APPARATUS USING THE SAME
A light emitting apparatus includes a base substrate, at least a light emitting source disposed on the base substrate, and a multi-refractive layer refracting light emitted from the light emitting source, where the multi-refractive layer includes a first refractive layer and a second refractive layer disposed outside the first refractive layer, the first refractive layer having a lower index of refraction than the second refractive layer.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/54 - Encapsulations having a particular shape
95.
LIGHT EMITTING APPARATUS AND LIGHT EMITTING MODULE INCLUDING THE SAME
A light emitting apparatus is disclosed. The light emitting apparatus includes: a base substrate; a plurality of circuits disposed on an upper side of the base substrate; a light emitting source included in at least one circuit among the plurality of circuits; a first pad and a second pad disposed on a lower side of the base substrate and contacting one electrode or another electrode of each of the plurality of circuits; and an electrodeless pad array disposed on the lower side of the base substrate. The number of electrodeless pads included in the electrodeless pad array is determined based on a number of the plurality of circuits.
F21V 19/00 - Fastening of light sources or lamp holders
F21Y 105/18 - Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the overall shape of the two-dimensional array annularPlanar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the overall shape of the two-dimensional array polygonal other than square or rectangular, e.g. for spotlights or for generating an axially symmetrical light beam
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
A light emitting apparatus is disclosed. The light emitting apparatus includes a base substrate, at least a light emitting source disposed on the base substrate, and a multi-refractive layer refracting light emitted from the light emitting source, wherein the multi-refractive layer includes a first refractive layer and a second refractive layer disposed outside the first refractive layer, the first refractive layer having a lower index of refraction than the second refractive layer.
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
97.
LIGHT EMITTING APPARATUS AND LIGHT EMITTING MODULE INCLUDING THE SAME
A light emitting apparatus is disclosed. The light emitting apparatus includes: a base substrate; a plurality of circuits disposed on an upper side of the base substrate; at least a light emitting source included in at least a circuit among the plurality of circuits; a first pad and a second pad disposed on a lower side of the base substrate and contacting one electrode or the other electrode of each of the plurality of circuits; and an electrodeless pad array disposed on the lower side of the base substrate, wherein the number of electrodeless pads included in the electrodeless pad array is determined based on the number of circuits.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
An air purifier includes a case having an air inlet and an air outlet, a fan disposed adjacent the air inlet, a UV LED unit and a filter unit arranged over the fan along a flow path of air, and a fluid control structure disposed between the fan and the filter unit.
B01D 46/00 - Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
F24F 1/0071 - Indoor units, e.g. fan coil units with means for purifying supplied air
F24F 8/22 - Treatment, e.g. purification, of air supplied to human living or working spaces otherwise than by heating, cooling, humidifying or drying by sterilisation using UV light
A light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The active layer has a single structure of a multi-quantum well in which a plurality of barrier layers and a plurality of well layers are stacked, and the active layer emits white light.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
