Generally described, one or more embodiments are directed to semiconductor packages comprising a plurality of leads and methods of forming same. The plurality of leads include active leads that are electrically coupled to bond pads of a semiconductor die and thereby coupled to active components of the semiconductor die, and inactive leads that are not electrically coupled to bond pads of the semiconductor die. The active leads have surfaces that are exposed at a lower surface of the semiconductor package and forms lands, while the inactive leads are not exposed at the lower surface of the package.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/00 - Details of semiconductor or other solid state devices
Generally described, one or more embodiments are directed to semiconductor packages comprising a plurality of leads and methods of forming same. The plurality of leads include active leads that are electrically coupled to bond pads of a semiconductor die and thereby coupled to active components of the semiconductor die, and inactive leads that are not electrically coupled to bond pads of the semiconductor die. The active leads have surfaces that are exposed at a lower surface of the semiconductor package and forms lands, while the inactive leads are not exposed at the lower surface of the package.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/00 - Details of semiconductor or other solid state devices
3.
HIGH DOSE IMPLANTATION FOR ULTRATHIN SEMICONDUCTOR-ON-INSULATOR SUBSTRATES
Methods and structures for forming highly-doped, ultrathin layers for transistors formed in semiconductor-on-insulator substrates are described. High dopant concentrations may be achieved in ultrathin semiconductor layers to improve device characteristics. Ion implantation at elevated temperatures may mitigate defect formation for stoichiometric dopant concentrations up to about 30%. In-plane stressors may be formed adjacent to channels of transistors formed in ultrathin semiconductor layers.
H10D 30/69 - IGFETs having charge trapping gate insulators, e.g. MNOS transistors
H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/70 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereofManufacture of integrated circuit devices or of specific parts thereof
H10D 62/822 - Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
H10D 62/832 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
H10D 84/03 - Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
H10D 86/00 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
Single gate and dual gate FinFET devices suitable for use in an SRAM memory array have respective fins, source regions, and drain regions that are formed from portions of a single, contiguous layer on the semiconductor substrate, so that STI is unnecessary. Pairs of FinFETs can be configured as dependent-gate devices wherein adjacent channels are controlled by a common gate, or as independent-gate devices wherein one channel is controlled by two gates. Metal interconnects coupling a plurality of the FinFET devices are made of a same material as the gate electrodes. Such structural and material commonalities help to reduce costs of manufacturing high-density memory arrays.
H10D 86/00 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
H01L 21/266 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation using masks
H01L 23/528 - Layout of the interconnection structure
H10B 10/00 - Static random access memory [SRAM] devices
H10D 30/69 - IGFETs having charge trapping gate insulators, e.g. MNOS transistors
H10D 62/10 - Shapes, relative sizes or dispositions of the regions of the semiconductor bodiesShapes of the semiconductor bodies
H10D 62/832 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
H10D 84/03 - Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic relaxation. The structures exhibit a preferred design range for increasing induced strain and uniformity of the strain over the fin height.
H10D 30/62 - Fin field-effect transistors [FinFET]
H10D 62/815 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wellsSemiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
H10D 62/822 - Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
H10D 62/83 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
H10D 62/832 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
6.
MULTIPLE THRESHOLD CHECKERS FOR SPECIFIC APPLICATIONS AND FFT BASED BREATHING DETECTION FOR PRESENCE
In accordance with embodiments, methods and systems for utilizing multiple threshold checkers are provided. A range sensor collects measurement data. The range sensor examines the measurement data based on multiple threshold checkers to determine satisfaction of a trigger condition. In response to the satisfaction of the trigger condition, the range sensor provides the measurement data to a host computing device of the range sensor.
G06F 1/3231 - Monitoring the presence, absence or movement of users
G01S 7/41 - Details of systems according to groups , , of systems according to group using analysis of echo signal for target characterisationTarget signatureTarget cross-section
G01S 13/56 - Discriminating between fixed and moving objects or between objects moving at different speeds for presence detection
7.
DEVICE, SYSTEM AND METHOD FOR SYNCHRONIZING OF DATA FROM MULTIPLE SENSORS
In an embodiment, a device comprises a memory, which, in operation, stores data samples associated with a plurality of data sensors, and circuitry, coupled to the memory, wherein the circuitry, in operation, generates synchronized output data sets associated with the plurality of data sensors. Generating a synchronized output data set includes: determining a reference sample associated with a sensor of the plurality of sensors; verifying a timing validity of a data sample associated with another sensor of the plurality of sensors; identifying a closest-in-time data sample associated with the another sensor of the plurality of sensors with respect to the reference sample; and generating the synchronized output data set based on interpolation.
H04W 4/38 - Services specially adapted for particular environments, situations or purposes for collecting sensor information
G01D 5/244 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing characteristics of pulses or pulse trainsMechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means generating pulses or pulse trains
STMicroelectronics International N.V. (Switzerland)
Inventor
Chowdhary, Mahesh
Kumar, Vijay
Paul, Kolin
Abstract
A blood pressure monitoring device includes a patch including two inertial measurement units placed adjacent to the skin of a user. The blood pressure monitoring device includes a control unit coupled to the patch and configured to receive sensor data from the inertial measurement units. The control unit includes an analysis model trained with multiple machine learning processes to generate blood pressure estimations based on the sensor data. A first general machine learning process trains the analysis model with a training set gathered from plurality of other individuals. The second general machine learning process retrains a portion of the analysis model with a second machine learning process utilizing individualized training set gathered from the user.
An electronic device includes a sensor unit. The sensor unit includes a sensor and low power, low area sensor processing unit. The sensor processing unit performs an unsupervised machine learning processes to learn to recognize an activity or motion of the user or device. The user can request to learn the new activity. The sensor processing unit can request that the user remain stationary for a selected period of time before performing the activity. The sensor processing unit records sensor data while the user performs the activity and generates an activity template from the sensor data. The sensor processing can then infer when the user is performing the activity by comparing sensor signals to the activity template.
G06F 3/01 - Input arrangements or combined input and output arrangements for interaction between user and computer
G06F 1/16 - Constructional details or arrangements
G06F 3/0346 - Pointing devices displaced or positioned by the userAccessories therefor with detection of the device orientation or free movement in a 3D space, e.g. 3D mice, 6-DOF [six degrees of freedom] pointers using gyroscopes, accelerometers or tilt-sensors
10.
Method for manufacturing leadless semiconductor package with wettable flanks
The present disclosure is directed to leadless semiconductor packages with improved wettable flanks that encourage the formation of solder fillets when the leadless semiconductor package is mounted to a substrate. The solder fillets are consistently formed and are easily detectable by inspection systems, such as automated optical inspection (AOI) systems.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
In various embodiments, the present disclosure provides semiconductor devices, packages, and methods. In one embodiment, a device includes a die pad, a lead that is spaced apart from the die pad, and an encapsulant on the die pad and the lead. A plurality of cavities extends into at least one of the die pad or the lead to a depth from a surface of the at least one of the die pad or the lead. The depth is within a range from 0.5 μm to 5 μm. The encapsulant extends into the plurality of cavities. The cavities facilitate improved adhesion between the die pad or lead and the encapsulant, as the cavities increase a surface area of contact with the encapsulant, and further increase a mechanical interlock with the encapsulant, as the cavities may have a rounded or semi-spherical shape.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
12.
Integrated circuit devices and fabrication techniques
Single gate and dual gate FinFET devices suitable for use in an SRAM memory array have respective fins, source regions, and drain regions that are formed from portions of a single, contiguous layer on the semiconductor substrate, so that STI is unnecessary. Pairs of FinFETs can be configured as dependent-gate devices wherein adjacent channels are controlled by a common gate, or as independent-gate devices wherein one channel is controlled by two gates. Metal interconnects coupling a plurality of the FinFET devices are made of a same material as the gate electrodes. Such structural and material commonalities help to reduce costs of manufacturing high-density memory arrays.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 21/266 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation using masks
H01L 21/8238 - Complementary field-effect transistors, e.g. CMOS
H01L 21/84 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
H01L 23/528 - Layout of the interconnection structure
H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/161 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group
A semiconductor package that contains an application-specific integrated circuit (ASIC) die and a micro-electromechanical system (MEMS) die. The MEMS die and the ASIC die are coupled to a substrate that includes an opening that extends through the substrate and is in fluid communication with an air cavity positioned between and separating the MEMS die from the substrate. The opening exposes the air cavity to an external environment and, following this, the air cavity exposes a MEMS element of the MEMS die to the external environment. The air cavity separating the MEMS die from the substrate is formed with a method of manufacturing that utilizes a thermally decomposable die attach material.
An electronic device includes an integrated circuit (IC) with its second face bonded to a first surface of a first support. A conductive clip has a first portion that is elongate and extends across the IC, having its second surface bonded to a first face of the IC by a solder layer. A second portion of the clip extends from the first portion away from the IC toward a second support with the second surface bonded to a first surface of the second support. A first surface of the clip has a pattern formed therein including a depressed floor with fins extending upwardly therefrom. Through-holes extend through the depressed floor to the second surface of the clip. An encapsulating layer covers portions of the first and second supports, IC, and clip while leaving the first surface of the first portion exposed to permit heat to radiate away therefrom.
A method of operating a microcontroller to perform a Fast Fourier Transform, the method including receiving, by the microcontroller, N samples from a signal; and performing, by the microcontroller, a first butterfly operation of the Fast Fourier Transform before all of the N samples have been received from the signal, based on the performing of the first butterfly operation, the microcontroller performs the Fast Fourier Transform at a higher performance to power efficiency than a Fast Fourier Transform operation that begins after all of the N samples are received.
A system includes inertial sensors and a GPS. The system generates a first estimated vehicle velocity based on motion data and positioning data, generates a second estimated vehicle velocity based on the processed motion data and the first estimated vehicle velocity, and generates fused datasets indicative of position, velocity and attitude of a vehicle based on the processed motion data, the positioning data and the second estimated vehicle velocity. The generating the second estimated vehicle velocity includes: filtering the motion data, transforming the filtered motion data in a frequency domain based on the first estimated vehicle velocity, generating spectral power density signals, generating an estimated wheel angular frequency and an estimated wheel size based on the spectral power density signals, and generating the second estimated vehicle velocity as a function of the estimated wheel angular frequency and the estimated wheel size.
G01S 19/47 - Determining position by combining measurements of signals from the satellite radio beacon positioning system with a supplementary measurement the supplementary measurement being an inertial measurement, e.g. tightly coupled inertial
17.
SYSTEM AND METHOD FOR FAST MAGNETOMETER CALIBRATION USING GYROSCOPE
An electronic device includes a magnetometer that outputs magnetometer sensor signals and a gyroscope that outputs gyroscope sensor signals. The electronic device includes a magnetometer calibration module that calibrates the magnetometer utilizing the gyroscope sensor signals. The electronic device generates a first magnetometer calibration parameter based on a Kalman filter process. The electronic device generates a second magnetometer calibration parameter based on a least squares estimation process.
An embodiment method for operating a device includes determining, based on data collected by a first sensor, first information between the first sensor and an object; determining, based on data collected by a second sensor, second information between the second sensor and the object; and determining a distance between the device and the object based on comparing the first information and the second information.
A method includes dividing a field of view into a plurality of zones and sampling the field of view to generate a photon count for each zone of the plurality of zones, identifying a focal sector of the field of view and analyzing each zone to select a final focal object from a first prospective focal object and a second prospective focal object.
A leadframe having extensions around an outer edge of a die pad are disclosed. More specifically, leadframes are created with a flange formed at the outer edge of the die pad and extending away from the die pad. The flange is bent, such that it is positioned at an angle with respect to the die pad. Leadframes are also created with anchoring posts formed adjacent the outer edge of the die pad and extending away from the die pad. The anchoring posts have a central thickness that is less than a thickness of first and second portions opposite the central portion. When the leadframe is incorporated into a package, molding compound completely surrounds each flange or anchoring post, which increases the bond strength between the leadframe and the molding compound due to increased contact area. The net result is a reduced possibility of delamination at edges of the die pad.
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
The present disclosure is directed to a thin substrate package and a lead frame method of fabricating the semiconductor package. The semiconductor package includes a first lead frame portion and a second lead frame portion. A substrate is positioned in a center opening between the first lead frame portion and the second lead frame portion, the substrate having a thickness less than or equal to 0.10-millimeters (mm). A first die having a plurality of wires is positioned on the substrate by an adhesive. A molding compound covers the first and second lead frame portions, the substrate, and the first die.
A method for operating an electronic device includes while a display is in low power mode, detecting based on data collected by a time of flight (ToF) sensor, a movable object within a field of view of the electronic device; in response to the detecting initiating a period of detection having a plurality of frames, the period of detection being a time period over which a distance value indicative of a distance between the movable object and the display is detected; for each of the plurality of frames, changing the distance value to reflect whether the movable object is moving near or further from the electronic device; detecting that the distance value after the period of detection is less than a threshold distance value indicative of the movable object approaching the display; if the distance value is less than the threshold distance value, waking up the display.
A device including microelectromechanical systems (MEMS) sensors are used in dead reckoning in conditions where Global Positioning System (GPS) signals or Global Navigation Satellite System (GNSS) signals are lost. The device is capable of tracking the location of the device after the GPS/GNSS signals are lost by using MEMS sensors such as accelerometers and gyroscopes. By calculating a misalignment angle between a forward axis of a sensor frame of the device and a forward axis of a vehicle frame using the data received from the MEMS sensors, the device can accurately calculate the location of a user or the vehicle of the device even without the GPS/GNSS signals. Accordingly, a device capable of tracking the location of the user riding in the vehicle in GPS/GNSS signals absent environment can be provided.
G01C 21/16 - NavigationNavigational instruments not provided for in groups by using measurement of speed or acceleration executed aboard the object being navigatedDead reckoning by integrating acceleration or speed, i.e. inertial navigation
G01C 21/20 - Instruments for performing navigational calculations
G01S 19/49 - Determining position by combining or switching between position solutions derived from the satellite radio beacon positioning system and position solutions derived from a further system whereby the further system is an inertial position system, e.g. loosely-coupled
Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic relaxation. The structures exhibit a preferred design range for increasing induced strain and uniformity of the strain over the fin height.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/15 - Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/161 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group
H01L 29/165 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group in different semiconductor regions
An electronic device capable of determining an eye convergence angle using a magnetometer sensor is provided. The magnetometer sensor is capable of reporting angle readings in three dimensions that is aligned with an eye gaze direction of each eye of a user. The magnetometer which is incorporated into the device can fit into a human eye like a contact lens and determine the angle of the gaze direction of both eyes with respect to an object within a field of view. By obtaining this eye convergence angle for an object, it is possible to accurately detect depth information. The electronic device also functions as a digital contact lens that can automatically adjust the focal point of the object to provide the user with a clear vision. The electronic device also includes a display that provides the user with additional information about the object.
G06F 3/01 - Input arrangements or combined input and output arrangements for interaction between user and computer
G01C 3/06 - Use of electric means to obtain final indication
G01C 3/14 - Measuring distances in line of sightOptical rangefinders using a parallactic triangle with variable angles and a base of fixed length in the observation station, e.g. in the instrument with binocular observation at a single point, e.g. stereoscopic type
G01C 3/22 - Measuring distances in line of sightOptical rangefinders using a parallactic triangle with variable angles and a base of fixed length at, near, or formed by, the object
An electronic device includes a depth sensor and an inertial measurement unit. The electronic device detects a presence of the user of the electronic device by analyzing a combination of inertial sensor signals from the inertial measurement unit and depth sensor signals from the depth sensor.
G06V 40/16 - Human faces, e.g. facial parts, sketches or expressions
G01B 7/30 - Measuring arrangements characterised by the use of electric or magnetic techniques for measuring angles or tapersMeasuring arrangements characterised by the use of electric or magnetic techniques for testing the alignment of axes
G01C 19/00 - GyroscopesTurn-sensitive devices using vibrating massesTurn-sensitive devices without moving massesMeasuring angular rate using gyroscopic effects
G01S 17/08 - Systems determining position data of a target for measuring distance only
G01S 17/894 - 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
G01B 11/22 - Measuring arrangements characterised by the use of optical techniques for measuring depth
G01P 15/18 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration in two or more dimensions
The present disclosure is directed to a device and method for detection of motion events including towing of the vehicle, jacking of the vehicle, and the vehicle being hit by another object. Processing is split between an MCU and a sensor unit. After the vehicle is turned off and before the MCU enters a sleep mode, the MCU calculates a gravity vector of the vehicle using accelerometer data, calculates threshold values based on the gravity vector, and saves the threshold values. After the MCU enters the sleep mode, the sensor unit subsequently monitors and detects motion events with the saved threshold values.
B60W 40/10 - Estimation or calculation of driving parameters for road vehicle drive control systems not related to the control of a particular sub-unit related to vehicle motion
B60R 16/023 - Electric or fluid circuits specially adapted for vehicles and not otherwise provided forArrangement of elements of electric or fluid circuits specially adapted for vehicles and not otherwise provided for electric for transmission of signals between vehicle parts or subsystems
B60R 16/03 - Electric or fluid circuits specially adapted for vehicles and not otherwise provided forArrangement of elements of electric or fluid circuits specially adapted for vehicles and not otherwise provided for electric for supply of electrical power to vehicle subsystems
At start-up of a microelectromechanical system (MEMS) gyroscope, the drive signal is inhibited, and the phase, frequency and amplitude of any residual mechanical oscillation is sensed and processed to determine a process path for start-up. In the event that the sensed frequency of the residual mechanical oscillation is a spurious mode frequency and a quality factor of the residual mechanical oscillation is sufficient, an anti-phase signal is applied as the MEMS gyroscope drive signal in order to implement an active dampening of the residual mechanical oscillation. A kicking phase can then be performed to initiate oscillation. Also, in the event that the sensed frequency of the residual mechanical oscillation is a resonant mode frequency with sufficient drive energy, a quadrature phase signal with phase lock loop frequency control and amplitude controlled by the drive energy is applied as the MEMS gyroscope drive signal in order to induce controlled oscillation.
G01C 19/5762 - Structural details or topology the devices having a single sensing mass the sensing mass being connected to a driving mass, e.g. driving frames
29.
System and method for disk drive fly height measurement
A system for determining a fly height includes a first head of a disk drive, a second head of the disk drive, a capacitive sensor circuit coupled to the first head and the second head, and a logic device coupled to the capacitive sensor circuit. The capacitive sensor circuit is configured to measure a first capacitance between the first head and the first disk, remove noise from the first capacitance using a second capacitance between the second head and the second disk, and based thereon determine a corrected first capacitance. The logic device is configured to determine the fly height between the first head and the first disk using the corrected first capacitance.
A microelectromechanical system (MEMS) gyroscope includes a driving mass and a driving circuit that operates to drive the driving mass in a mechanical oscillation at a resonant drive frequency. An oscillator generates a system clock that is independent of and asynchronous to the resonant drive frequency. A clock generator circuit outputs a first clock and a second clock that are derived from the system clock. The drive loop of the driving circuit including an analog-to-digital converter (ADC) circuit that is clocked by the first clock and a digital signal processing (DSP) circuit that is clocked by the second clock.
The present disclosure is directed to a package having a die on a die pad that has a first portion and a second portion, the second portion being larger than the first portion in a first direction. The package includes a plurality of leads, where at least a first lead has a first surface coplanar with a first, lower surface of the first portion of the die pad. The first lead having a second surface that is transverse to the first surface of the first lead. The second surface being an external surface of the lead and package. The second portion of the die pad being an extension that is overlapping the first lead.
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
An imaging device includes a first layer made of quantum dots and a second layer including at least two filter regions extending over the first layer. The at least two filter regions are configured to transmit distinct wavelengths. The quantum dots of the first layer are configured to generate charges upon reception of light in the distinct wavelengths.
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
33.
Lead frame for improving adhesive fillets on semiconductor die corners
The present disclosure is directed to a lead frame including a die pad with cavities, and methods for attaching a semiconductor die to the lead frame. The cavities allow for additional adhesive to be formed on the die pad at the corners of the semiconductor die, and prevent the additional adhesive from overflowing on to active areas of the semiconductor die.
H01L 23/49 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions wire-like
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/00 - Details of semiconductor or other solid state devices
A method and device for unlatching a door from a frame, using a keyless door latch system, is provided. In one embodiment, a secondary unlocking component receives a signal and derives power from the signal to provide a power source for the keyless door latch system. A microcontroller generates a control signal and an actuator, in response to receiving the control signal, actuates the secondary unlocking component, which allows an energy source, from an exterior of the door, to be transferred to the keyless door latch system for the unlatching of the door.
The present disclosure is directed to a package, such as a wafer level chip scale package (WLCSP) or a package containing a semiconductor die, with a die embedded within a substrate that is surrounded by an elastomer. The package includes nonconductive layers on surfaces of the substrate and the elastomer as well as conductive layers and conductive vias that extend through these layers to form electrical connections in the package. The package includes surfaces of the conductive material, which may be referred to as contacts. These surfaces of the conductive material are exposed on both sides of the package and allow the package to be mounted within an electronic device and have other electronic components coupled to the package, or allow the package to be included in a stacked configuration of semiconductor dice or packages.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 23/00 - Details of semiconductor or other solid state devices
36.
METHOD, SYSTEM, AND CIRCUITS FOR RF LOW-LATENCY, MULTIPLE PRIORITY COMMUNICATION
System, method, and circuitry for utilizing a transmit token to create a floating transmission window for multiple priority data in half-duplex communication systems. A first computing device selects audio data and control data to transmit to a second computing device based on a first low priority for audio data relative to a second high priority for control data and on buffer statuses. In response to the first computing device determining that the first computing device possesses a transmit token, the first computing device transmits the selected audio data and the selected control data to the second computing device. The first computing device then transmits the transmit token to the second computing device. The first computing device then waits for the transmit token to be returned before transmitting more data to the second computing device.
An electronic device receives wireless signals encoded with data in an amplitude-shift keying format. The electronic device passes the wireless signals through a low-pass filter. The low-pass filter has a cutoff frequency between a first frequency associated with data values of a first type and a second frequency associated with data values of a second type. The low-pass filter has the effect of changing the wireless signal from the amplitude-shift keying format to an on-off keying format without losing the data. The electronic device decodes the data from the wireless signal in the on-off keying format.
A method to determine a relative delay between a current-overshoot signal and a write data signal for a hard disk drive preamplifier, the method including using a memory element to strobe a test current-overshoot signal with a test data signal; counting a number of strobed transitions of the test current-overshoot signal; adjusting the delay based on the number of strobed transitions; setting a phase difference between the current-overshoot signal and the write data signal according to the delay; and using the memory element to strobe the current-overshoot signal with the write data signal.
STMICROELECTRONICS INTERNATIONAL N.V. (Netherlands)
Inventor
Vigna, Benedetto
Chowdhary, Mahesh
Dameno, Matteo
Abstract
A method includes receiving, at a master agent, announcements from candidate consumer agents indicating the presence of the candidate consumer agents. Each announcement includes display parameters for a display of the corresponding candidate consumer agent. The method further includes receiving at the master agent content parameters from a producer agent, the content parameters defining characteristics of content to be provided by the consumer agent. A mosaic screen is configured based on the received announcements and the content parameters. This configuring of the mosaic screen includes selecting ones of the consumer agents for which an announcement was received and generating content distribution parameters based on the content parameters and the display parameters of the selected ones of the consumer agents. The generated content distribution parameters are provided to the consumer agent.
A device includes processing circuitry and sensor communication interface circuitry. The processing circuitry, in operation, generates one or more parameters of a regression model based on a plurality of data sets. Each data set includes an application time stamp and a sensor time stamp. Based on the one or more parameters, the processing circuitry estimates application time stamps associated with received sensor data samples. The received sensor data samples have associated sensor time stamps. The sensor communication interface circuitry is coupled to the processing circuitry. The sensor communication interface circuitry, in operation, communicatively couples the processing circuitry to a sensor. Data samples of the sensor are received by the processor via the sensor communication interface circuitry.
H04L 67/12 - Protocols specially adapted for proprietary or special-purpose networking environments, e.g. medical networks, sensor networks, networks in vehicles or remote metering networks
H04L 67/1095 - Replication or mirroring of data, e.g. scheduling or transport for data synchronisation between network nodes
A method includes dividing a field of view into a plurality of zones and sampling the field of view to generate a photon count for each zone of the plurality of zones, identifying a focal sector of the field of view and analyzing each zone to select a final focal object from a first prospective focal object and a second prospective focal object.
The present disclosure is directed to semiconductor packages manufactured utilizing a leadframe with varying thicknesses. The leadframe with varying thicknesses has a reduced likelihood of deformation while being handled during the manufacturing of the semiconductor packages as well as when being handled during a shipping process. The method of manufacturing is not required to utilize a leadframe tape based on the leadframe with varying thicknesses. This reduces the overall manufacturing costs of the semiconductor packages due to the reduced materials and steps in manufacturing the semiconductor packages as compared to a method that utilizes a leadframe tape to support a leadframe. The semiconductor packages may include leads of varying thicknesses formed by utilizing the leadframe of varying thicknesses to manufacture the semiconductor packages.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
43.
Robotic device with time-of-flight proximity sensing system
A robotic device including one or more proximity sensing systems coupled to various portions of a robot body. The proximity sensing systems detect a distance of an object about the robot body and the robotic device reacts based on the detected distance. The proximity sensing systems obtain a three-dimensional (3D) profile of the object to determine a category of the object. The distance of the object is detected multiple times in a sequence to determine a movement path of the object.
A semiconductor package device having a porous copper adhesion promoter layer is provided. The porous copper adhesion promoter layer developed via de-metallization of the intermetallic compound layer grown after the thermal treatment of a thin metal layer plated on the copper base material. The highly selective de-metallization of the intermetallic compound layer ensures that the plated surfaces are not affected and does not create wire-bondability issues. The porous copper layer solves the delamination between the carrier and the epoxy molding compound by providing mechanical interlock features. Further, increasing the surface area of contact between the carrier and the epoxy molding compound improves the mechanical interlock features.
A secure element device that is configured to be cryptographically bound to a host device includes a secure element host key slot configured to store host key information that allows only the host device to control the secure element, a secure memory storing binding information, and limited functionality allowing the binding information to be read from the secure memory by the host device during a binding process. The binding information is cryptographically correlated with the host key information. The host key information is generated by the host device using the binding information read from the secure element and a secret key. The secure element device further includes general functionality only accessible to the host device using the host key information that is generated by the host device. The secure memory includes prevention measures impeding unauthorized entities from obtaining information from the secure memory.
G06F 11/14 - Error detection or correction of the data by redundancy in operation, e.g. by using different operation sequences leading to the same result
H04L 9/14 - Arrangements for secret or secure communicationsNetwork security protocols using a plurality of keys or algorithms
H04L 9/30 - Public key, i.e. encryption algorithm being computationally infeasible to invert and users' encryption keys not requiring secrecy
H04L 9/32 - Arrangements for secret or secure communicationsNetwork security protocols including means for verifying the identity or authority of a user of the system
46.
Dynamic memory protection device system and method
A microcontroller includes a memory, direct memory access (DMA) controllers and a microprocessor. The microprocessor maintains one or more memory protection (MP) configurations to control access to protected memory areas of the microcontroller. In response to a secure service call of an unsecure user-application, the microprocessor executes a state machine which disables interrupt requests, determining whether DMA controller configurations and MP configurations satisfy secure-service criteria. When the secure-service criteria are satisfied, at least one secure operation associated with the secure service call is performed, and memory areas accessed during the execution of the at least one secure operation are cleaned. The interrupt requests are re-enabled and a response to the secure service call is generated.
G06F 13/28 - Handling requests for interconnection or transfer for access to input/output bus using burst mode transfer, e.g. direct memory access, cycle steal
G06F 13/24 - Handling requests for interconnection or transfer for access to input/output bus using interrupt
H04L 9/32 - Arrangements for secret or secure communicationsNetwork security protocols including means for verifying the identity or authority of a user of the system
47.
POWER AND SECURITY ADJUSTMENT FOR FACE IDENTIFICATION WITH REFLECTIVITY DETECTION BY A RANGING SENSOR
The present disclosure is directed to a system and method of controlling a facial recognition process by validating preconditions with a ranging sensor. The ranging sensor transmits a ranging signal that is reflected off of a user's face and received back at the ranging sensor. The received ranging signal can be used to determine distance between the user's face and the mobile device or to determine the reflectivity of the user's face. Comparing the distance to a range of distances corresponding to normal operation of the device or normal reflectivities associated with human skin tones can reduce the number of false positive activations of the facial recognition process. Furthermore, a multiple zone ranging sensor can produce a face depth map that can be compared to a stored face depth map or can produce a reflectivity map that can be compared to a stored face reflectivity map to further increase power efficiency and device security.
In various embodiments, the present disclosure provides semiconductor devices, packages, and methods. In one embodiment, a device includes a die pad, a lead that is spaced apart from the die pad, and an encapsulant on the die pad and the lead. A plurality of cavities extends into at least one of the die pad or the lead to a depth from a surface of the at least one of the die pad or the lead. The depth is within a range from 0.5 μm to 5 μm. The encapsulant extends into the plurality of cavities. The cavities facilitate improved adhesion between the die pad or lead and the encapsulant, as the cavities increase a surface area of contact with the encapsulant, and further increase a mechanical interlock with the encapsulant, as the cavities may have a rounded or semi-spherical shape.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
49.
Method of manufacturing semiconductor devices and corresponding semiconductor device
A semiconductor device, such as a Quad-Flat No-lead (QFN) package, includes a semiconductor chip arranged on a die pad of a leadframe. The leadframe has an array of electrically-conductive leads around the die pad. The leads in the array have distal ends facing away from the die pad as well as recessed portions at an upper surface of the leads. Resilient material, such as low elasticity modulus material, is present at the upper surface of the leads and filling the recessed portions. An insulating encapsulation is molded onto the semiconductor chip. The resilient material is sandwiched between the insulating encapsulation and the distal ends of the leads. This resilient material facilitates flexibility of the leads, making them suited for reliable soldering to an insulated metal substrate.
A MEMS pressure sensor packaged with a molding compound. The MEMS pressure sensor features a lead frame, a MEMS semiconductor die, a second semiconductor die, multiple pluralities of bonding wires, and a molding compound. The MEMS semiconductor die has an internal chamber, a sensing component, and apertures. The MEMS semiconductor die and the apertures are exposed to an ambient atmosphere. A method is desired to form a MEMS pressure sensor package that reduces defects caused by mold flashing and die cracking. Fabrication of the MEMS pressure sensor package comprises placing a lead frame on a lead frame tape; placing a MEMS semiconductor die adjacent to the lead frame and on the lead frame tape with the apertures facing the tape and being sealed thereby; attaching a second semiconductor die to the MEMS semiconductor die; attaching pluralities of bonding wires to form electrical connections between the MEMS semiconductor die, the second semiconductor die, and the lead frame; and forming a molding compound.
An electronic device includes a magnetometer that outputs magnetometer sensor signals and a gyroscope that outputs gyroscope sensor signals. The electronic device includes a magnetometer calibration module that calibrates the magnetometer utilizing the gyroscope sensor signals. The electronic device generates a first magnetometer calibration parameter based on a Kalman filter process. The electronic device generates a second magnetometer calibration parameter based on a least squares estimation process.
t. Use of a mass spectrometer during film deposition can assist in varying the composition of the quantum dot film. The metallic quantum dots can be incorporated into ion-doped source and drain regions. Alternatively, the metallic quantum dots can be incorporated into epitaxially doped source and drain regions.
H01L 29/775 - Field-effect transistors with one-dimensional charge carrier gas channel, e.g. quantum wire FET
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/165 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group in different semiconductor regions
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
Technological advancements are disclosed that utilize inertial sensor data for multiple classes to select a combination of filters to extract information though features to train a machine learning core decision tree. A determination is made whether the data for a class includes a frequency peak or dominating frequency that contains significant information about the class. In response to the data for the class including a frequency peak, a peak-based frequency range is determined. An entropy value is calculated for multiple frequency ranges in the data for the class. An entropy-based frequency range is selected from the multiple frequency ranges having a minimum entropy value. A frequency of interest is selected from the peak-based frequency range and the entropy-based frequency range for the class. A combination of filters is selected for each frequency of interest for each class and a decision tree is trained based on selected filter combination.
The present disclosure is directed to a semiconductor package that include a non-conductive encapsulation layer encapsulation an integrated circuit chip, and a conductive encapsulation layer over the non-conductive encapsulation layer. A lead is exposed from the non-conductive encapsulation layer and contacts the conductive encapsulation layer. The conductive encapsulation layer and the lead provide EMI shielding for the integrated circuit chip.
A device including microelectromechanical systems (MEMS) sensors is used in dead reckoning in conditions where Global Positioning System (GPS) signals or Global Navigation Satellite System (GNSS) signals are lost. The device is capable of tracking the location of the device after the GPS/GNSS signals are lost by using MEMS sensors such as accelerometers and gyroscopes. By calculating a misalignment angle between a sensor frame of the device with either the movement direction of the vehicle or the walking direction of a pedestrian using the MEMS sensors, the device can accurately calculate the location of a user of the device even without the GPS/GNSS signals. Accordingly, a device capable of tracking the location of a pedestrian and a user riding in a vehicle without utilizing GPS/GNSS signals can be provided.
G01C 21/16 - NavigationNavigational instruments not provided for in groups by using measurement of speed or acceleration executed aboard the object being navigatedDead reckoning by integrating acceleration or speed, i.e. inertial navigation
G01C 21/20 - Instruments for performing navigational calculations
G01C 21/28 - NavigationNavigational instruments not provided for in groups specially adapted for navigation in a road network with correlation of data from several navigational instruments
G01S 19/47 - Determining position by combining measurements of signals from the satellite radio beacon positioning system with a supplementary measurement the supplementary measurement being an inertial measurement, e.g. tightly coupled inertial
56.
Method for motion estimation in a vehicle, corresponding device and computer program product
A system includes inertial sensors and a GPS. The system generates a first estimated vehicle velocity based on motion data and positioning data, generates a second estimated vehicle velocity based on the processed motion data and the first estimated vehicle velocity, and generates fused datasets indicative of position, velocity and attitude of a vehicle based on the processed motion data, the positioning data and the second estimated vehicle velocity. The generating the second estimated vehicle velocity includes: filtering the motion data, transforming the filtered motion data in a frequency domain based on the first estimated vehicle velocity, generating spectral power density signals, generating an estimated wheel angular frequency and an estimated wheel size based on the spectral power density signals, and generating the second estimated vehicle velocity as a function of the estimated wheel angular frequency and the estimated wheel size.
G01S 19/47 - Determining position by combining measurements of signals from the satellite radio beacon positioning system with a supplementary measurement the supplementary measurement being an inertial measurement, e.g. tightly coupled inertial
57.
System and method for detecting human presence based on depth sensing and inertial measurement
An electronic device includes a depth sensor and an inertial measurement unit. The electronic device detects a presence of the user of the electronic device by analyzing a combination of inertial sensor signals from the inertial measurement unit and depth sensor signals from the depth sensor.
G06F 18/214 - Generating training patternsBootstrap methods, e.g. bagging or boosting
G01B 7/30 - Measuring arrangements characterised by the use of electric or magnetic techniques for measuring angles or tapersMeasuring arrangements characterised by the use of electric or magnetic techniques for testing the alignment of axes
G01C 19/00 - GyroscopesTurn-sensitive devices using vibrating massesTurn-sensitive devices without moving massesMeasuring angular rate using gyroscopic effects
G01S 17/08 - Systems determining position data of a target for measuring distance only
G01S 17/894 - 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
G01B 11/22 - Measuring arrangements characterised by the use of optical techniques for measuring depth
G01P 15/18 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration in two or more dimensions
A microelectromechanical system (MEMS) gyroscope includes a driving mass and a driving circuit that operates to drive the driving mass in a mechanical oscillation at a resonant drive frequency. An oscillator generates a system clock that is independent of and asynchronous to the resonant drive frequency. A clock generator circuit outputs a first clock and a second clock that are derived from the system clock. The drive loop of the driving circuit including an analog-to-digital converter (ADC) circuit that is clocked by the first clock and a digital signal processing (DSP) circuit that is clocked by the second clock.
A first side of a tapeless leadframe package is etched to form a ring shaped protrusion and a lead protrusion extending from a base layer. An integrated circuit die is mounted to tapeless leadframe package in flip chip orientation with a front side facing the first side. An electrical and mechanical attachment is made between a bonding pad of the integrated circuit die and the lead protrusion. A mechanical attachment is made between the front side of the integrated circuit die and the ring shaped protrusion. The integrated circuit die and the protrusions from the tapeless leadframe package are encapsulated within an encapsulating block. The second side of the tapeless leadframe package is then etched to remove portions of the base layer and define a lead for a leadframe from the lead protrusion and further define a die support for the leadframe from the ring shaped protrusion.
In an embodiment, a device comprises a memory, which, in operation, stores data samples associated with a plurality of data sensors, and circuitry, coupled to the memory, wherein the circuitry, in operation, generates synchronized output data sets associated with the plurality of data sensors. Generating a synchronized output data set includes: determining a reference sample associated with a sensor of the plurality of sensors; verifying a timing validity of a data sample associated with another sensor of the plurality of sensors; identifying a closest-in-time data sample associated with the another sensor of the plurality of sensors with respect to the reference sample; and generating the synchronized output data set based on interpolation.
H04W 4/38 - Services specially adapted for particular environments, situations or purposes for collecting sensor information
G01D 5/244 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing characteristics of pulses or pulse trainsMechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means generating pulses or pulse trains
One or more embodiments are directed to semiconductor device packages having a cap with integrated metal interconnects or conductive leads. One embodiment is directed to a semiconductor device package that includes a cap having a cover extending along a first direction and sidewalls extending from the cover along a second direction that is transverse to the first direction. A plurality of electrical leads are disposed on inner surfaces of the sidewalls and extend over lower surfaces of the sidewalls. A semiconductor die is attached to an inner surface of the cover of the cap, and the semiconductor die is electrically coupled to the plurality of electrical leads.
H01L 23/043 - ContainersSeals characterised by the shape the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 21/52 - Mounting semiconductor bodies in containers
Single gate and dual gate FinFET devices suitable for use in an SRAM memory array have respective fins, source regions, and drain regions that are formed from portions of a single, contiguous layer on the semiconductor substrate, so that STI is unnecessary. Pairs of FinFETs can be configured as dependent-gate devices wherein adjacent channels are controlled by a common gate, or as independent-gate devices wherein one channel is controlled by two gates. Metal interconnects coupling a plurality of the FinFET devices are made of a same material as the gate electrodes. Such structural and material commonalities help to reduce costs of manufacturing high-density memory arrays.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 21/266 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation using masks
H01L 21/8238 - Complementary field-effect transistors, e.g. CMOS
H01L 21/84 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
H01L 23/528 - Layout of the interconnection structure
H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/161 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H10B 10/00 - Static random access memory [SRAM] devices
STMICROELECTRONICS INTERNATIONAL N.V. (Netherlands)
Inventor
Vigna, Benedetto
Chowdhary, Mahesh
Dameno, Matteo
Abstract
A method includes receiving, at a master agent, announcements from candidate consumer agents indicating the presence of the candidate consumer agents. Each announcement includes display parameters for a display of the corresponding candidate consumer agent. The method further includes receiving at the master agent content parameters from a producer agent, the content parameters defining characteristics of content to be provided by the consumer agent. A mosaic screen is configured based on the received announcements and the content parameters. This configuring of the mosaic screen includes selecting ones of the consumer agents for which an announcement was received and generating content distribution parameters based on the content parameters and the display parameters of the selected ones of the consumer agents. The generated content distribution parameters are provided to the consumer agent.
The present disclosure is directed to a package, such as a wafer level chip scale package (WLCSP) or a package containing a semiconductor die, with a die embedded within a substrate that is surrounded by an elastomer. The package includes nonconductive layers on surfaces of the substrate and the elastomer as well as conductive layers and conductive vias that extend through these layers to form electrical connections in the package. The package includes surfaces of the conductive material, which may be referred to as contacts. These surfaces of the conductive material are exposed on both sides of the package and allow the package to be mounted within an electronic device and have other electronic components coupled to the package, or allow the package to be included in a stacked configuration of semiconductor dice or packages.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
65.
Method for manufacturing leadless semiconductor package with wettable flanks
The present disclosure is directed to leadless semiconductor packages with improved wettable flanks that encourage the formation of solder fillets when the leadless semiconductor package is mounted to a substrate. The solder fillets are consistently formed and are easily detectable by inspection systems, such as automated optical inspection (AOI) systems.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
In accordance with embodiments, methods and systems for utilizing multiple threshold checkers are provided. A range sensor collects measurement data. The range sensor examines the measurement data based on multiple threshold checkers to determine satisfaction of a trigger condition. In response to the satisfaction of the trigger condition, the range sensor provides the measurement data to a host computing device of the range sensor.
In accordance with embodiments, methods and systems for utilizing multiple threshold checkers are provided. A range sensor collects measurement data. The range sensor examines the measurement data based on multiple threshold checkers to determine satisfaction of a trigger condition. In response to the satisfaction of the trigger condition, the range sensor provides the measurement data to a host computing device of the range sensor.
G06F 1/3231 - Monitoring the presence, absence or movement of users
G01S 7/41 - Details of systems according to groups , , of systems according to group using analysis of echo signal for target characterisationTarget signatureTarget cross-section
G01S 13/56 - Discriminating between fixed and moving objects or between objects moving at different speeds for presence detection
68.
METHOD AND SYSTEM FOR UPDATING MACHINE LEARNING BASED CLASSIFIERS FOR RECONFIGURABLE SENSORS
A sensor management system includes a cloud-based sensor configuration system and an electronic device. The electronic device includes a sensor unit. The sensor unit includes configuration data that controls operation of the sensor unit. The configuration data includes a classifier that classifies feature sets generated from sensor signals of the sensor unit. The electronic device sends sensor data to the cloud-based sensor configuration system. The cloud-based sensor configuration system analyzes the sensor data and generates a new classifier customized for the sensor unit based on the sensor data. The cloud-based sensor configuration system sends the new classifier to the electronic device. The electronic device replaces the classifier in the sensor unit with the new classifier.
The present disclosure is directed to a lead frame including a die pad with cavities, and methods for attaching a semiconductor die to the lead frame. The cavities allow for additional adhesive to be formed on the die pad at the corners of the semiconductor die, and prevent the additional adhesive from overflowing on to active areas of the semiconductor die.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
A leadframe having extensions around an outer edge of a die pad are disclosed. More specifically, leadframes are created with a flange formed at the outer edge of the die pad and extending away from the die pad. The flange is bent, such that it is positioned at an angle with respect to the die pad. Leadframes are also created with anchoring posts formed adjacent the outer edge of the die pad and extending away from the die pad. The anchoring posts have a central thickness that is less than a thickness of first and second portions opposite the central portion. When the leadframe is incorporated into a package, molding compound completely surrounds each flange or anchoring post, which increases the bond strength between the leadframe and the molding compound due to increased contact area. The net result is a reduced possibility of delamination at edges of the die pad.
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
The present disclosure is directed to an air filter sensor system that can monitor a status of a filter and provide information to a remote system regarding the filter's status. The system can receive, by a computing server via one or more computer networks and from each of a plurality of sensor assemblies coupled to a corresponding plurality of air filters, information indicative of filter contamination levels respectively associated with each corresponding air filter of the plurality of air filters. Each of the respective filter contamination levels being provided by one sensor assembly of the plurality of sensor assemblies based at least in part on a difference in detected air pressure between first and second sides of the corresponding air filter. The system tracks the respective filter contamination levels over a first period of time and determines, by the computing server and based at least in part on the tracking of the respective filter contamination levels, a schedule for one or more maintenance events associated with a first air filter of the plurality of air filters.
STMICROELECTRONICS INTERNATIONAL N.V. (Netherlands)
Inventor
Chowdhary, Mahesh
Kumar, Arun
Singh, Ghanapriya
Bahl, Rajendar
Abstract
A distributed computing system for artificial intelligence in autonomously appreciating a circumstance context of a smart device. Raw context data is detected by sensors associated with the smart device. The raw context data is pre-processed by the smart device and then provided to a cloud based server for further processing. At the cloud based server, various sets of feature data are obtained from the pre-processed context data. The various sets of feature data are compared with corresponding classification parameters to determine a classification of a continuous event and/or a classification of transient event, if any, which occur in the context. The determined classification of the continuous event and the transient event will be used to autonomously configure the smart device or another related smart device to fit the context.
G06F 3/0346 - Pointing devices displaced or positioned by the userAccessories therefor with detection of the device orientation or free movement in a 3D space, e.g. 3D mice, 6-DOF [six degrees of freedom] pointers using gyroscopes, accelerometers or tilt-sensors
G10L 25/51 - Speech or voice analysis techniques not restricted to a single one of groups specially adapted for particular use for comparison or discrimination
G06F 3/01 - Input arrangements or combined input and output arrangements for interaction between user and computer
H04M 1/72454 - User interfaces specially adapted for cordless or mobile telephones with means for adapting the functionality of the device according to specific conditions according to context-related or environment-related conditions
G10L 25/78 - Detection of presence or absence of voice signals
H04W 4/38 - Services specially adapted for particular environments, situations or purposes for collecting sensor information
H04L 67/12 - Protocols specially adapted for proprietary or special-purpose networking environments, e.g. medical networks, sensor networks, networks in vehicles or remote metering networks
73.
METHOD AND SYSTEM FOR GENERATING MACHINE LEARNING BASED CLASSIFIERS FOR RECONFIGURABLE SENSOR
A sensor management system includes a cloud-based sensor configuration system and an electronic device. The electronic device includes a sensor unit. The sensor unit includes configuration data that controls operation of the sensor unit. The configuration data includes a classifier that classifies feature sets generated from sensor signals of the sensor unit. The electronic device sends sensor data to the cloud-based sensor configuration system. The cloud-based sensor configuration system analyzes the sensor data and generates a new classifier customized for the sensor unit based on the sensor data. The cloud-based sensor configuration system sends the new classifier to the electronic device. The electronic device replaces the classifier in the sensor unit with the new classifier.
An electronic device capable of determining an eye convergence angle using a magnetometer sensor is provided. The magnetometer sensor is capable of reporting angle readings in three dimensions that is aligned with an eye gaze direction of each eye of a user. The magnetometer which is incorporated into the device can fit into a human eye like a contact lens and determine the angle of the gaze direction of both eyes with respect to an object within a field of view. By obtaining this eye convergence angle for an object, it is possible to accurately detect depth information. The electronic device also functions as a digital contact lens that can automatically adjust the focal point of the object to provide the user with a clear vision. The electronic device also includes a display that provides the user with additional information about the object.
G06F 3/01 - Input arrangements or combined input and output arrangements for interaction between user and computer
G01C 3/06 - Use of electric means to obtain final indication
G01C 3/14 - Measuring distances in line of sightOptical rangefinders using a parallactic triangle with variable angles and a base of fixed length in the observation station, e.g. in the instrument with binocular observation at a single point, e.g. stereoscopic type
G01C 3/22 - Measuring distances in line of sightOptical rangefinders using a parallactic triangle with variable angles and a base of fixed length at, near, or formed by, the object
A power supply interface includes a first switch that couples an input terminal to an output terminal. A voltage dividing bridge is coupled to receive a supply potential. A comparator has a first input connected to a first node of the bridge and a second input configured to receive a constant potential. A digital-to-analog converter generates a control voltage that is selectively coupled by a second switch to a second node of the bridge. A circuit control controls actuation of the second switch based on operating mode and generates a digital value input to the converter based on a negotiated set point of the supply potential applied to the input terminal.
H02H 3/20 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to excess voltage
G06F 1/26 - Power supply means, e.g. regulation thereof
A semiconductor package that contains an application-specific integrated circuit (ASIC) die and a micro-electromechanical system (MEMS) die. The MEMS die and the ASIC die are coupled to a substrate that includes an opening that extends through the substrate and is in fluid communication with an air cavity positioned between and separating the MEMS die from the substrate. The opening exposes the air cavity to an external environment and, following this, the air cavity exposes a MEMS element of the MEMS die to the external environment. The air cavity separating the MEMS die from the substrate is formed with a method of manufacturing that utilizes a thermally decomposable die attach material.
A device for generating a control signal based on the linear movement of a linear member is provided. The device includes a linear member, a rotatable member, a first inertial measurement unit (IMU) coupled to the rotatable member and a second IMU having a fixed position. The device also includes a processing circuit which uses sensing signals from the IMUS to determine an attitude of the first IMU referenced to the second IMU and generate a control signal based on the attitude.
The present disclosure is directed to a flat no-lead semiconductor package with a surfaced mounted structure. An end portion of the surface mounted structure includes a recessed member so that the surface mounted structure is coupled to leads of the flat no-lead semiconductor package through, among others, the sidewalls of the recessed members.
A semiconductor package formed utilizing multiple etching steps includes a lead frame, a die, and a molding compound. The lead frame includes leads and a die pad. The leads and the die pad are formed from a first conductive material by the multiple etching steps. More specifically, the leads and the die pad of the lead frame are formed by at least three etching steps. The at least three etching steps including a first etching step, a second undercut etching step, and a third backside etching step. The second undercut etching step forming interlocking portions at an end of each lead. The end of the lead is encased in the molding compound. This encasement of the end of the lead with the interlocking portion allows the interlocking portion to mechanically interlock with the molding compound to avoid lead pull out. In addition, by utilizing at least three etching steps the leads can be formed to have a height that is greater than the die pad of the lead frame. This differential in height reduces the span of wires used to form electrical connections within the semiconductor package. These reductions in the span of the wires reduces the chances of wire to wire and wire to die short circuiting because the wire sweep of the wires is reduced when the molding compound is placed.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
80.
Flat no-lead package with surface mounted structure
The present disclosure is directed to a flat no-lead semiconductor package with a surfaced mounted structure. An end portion of the surface mounted structure includes a recessed member so that the surface mounted structure is coupled to leads of the flat no-lead semiconductor package through, among others, the sidewalls of the recessed members.
Digital signal processing circuitry, in operation, determines, based on accelerometer data, a carry-position of a device. Double-tap detection parameters are set using the determined carry-position. Double-taps are detected using the set double-tap detection parameters. In response to detection of a double-tap, control signals, such as a flag or an interrupt signal, are generated and used to control operation of the device. For example, a device may enter a wake mode of operation in response to detection of a double-tap.
G06F 3/0346 - Pointing devices displaced or positioned by the userAccessories therefor with detection of the device orientation or free movement in a 3D space, e.g. 3D mice, 6-DOF [six degrees of freedom] pointers using gyroscopes, accelerometers or tilt-sensors
G06F 3/0487 - Interaction techniques based on graphical user interfaces [GUI] using specific features provided by the input device, e.g. functions controlled by the rotation of a mouse with dual sensing arrangements, or of the nature of the input device, e.g. tap gestures based on pressure sensed by a digitiser
82.
Power supply package with built-in radio frequency identification tag
A method includes providing a power supply package (PSP) that includes a power supply, an RFID tag, and a power switch, where a control terminal of the power switch is coupled to an output terminal of the RFID tag, and load path terminals of the power switch are coupled between an output terminal of the PSP and a first terminal of the power supply, where a control register of the RFID tag is pre-programmed with a first value such that the RFID tag is configured to generate a first control signal that turns off the power switch; receiving, by the RFID tag, a second value for the control register of the RFID tag; and writing, by the RFID tag, the second value to the control register of the RFID tag such that the RFID tag is configured to generate a second control signal that turns on the power switch.
G06K 7/10 - Methods or arrangements for sensing record carriers by electromagnetic radiation, e.g. optical sensingMethods or arrangements for sensing record carriers by corpuscular radiation
G06K 19/07 - Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards with integrated circuit chips
83.
Semiconductor device having cavities at an interface of an encapsulant and a die pad or leads
In various embodiments, the present disclosure provides semiconductor devices, packages, and methods. In one embodiment, a device includes a die pad, a lead that is spaced apart from the die pad, and an encapsulant on the die pad and the lead. A plurality of cavities extends into at least one of the die pad or the lead to a depth from a surface of the at least one of the die pad or the lead. The depth is within a range from 0.5 μm to 5 μm. The encapsulant extends into the plurality of cavities. The cavities facilitate improved adhesion between the die pad or lead and the encapsulant, as the cavities increase a surface area of contact with the encapsulant, and further increase a mechanical interlock with the encapsulant, as the cavities may have a rounded or semi-spherical shape.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
84.
Adaptive laser power and ranging limit for time of flight sensor
A time of flight range detection device includes a laser configured to transmit an optical pulse into an image scene, a return single-photon avalanche diode (SPAD) array, a reference SPAD array, a range detection circuit coupled to the return SPAD array and the reference SPAD array, and a laser driver circuit. The range detection circuit in operation determines a distance to an object based on signals from the return SPAD array and the reference SPAD array. The laser driver circuit in operation varies an output power level of the laser in response to the determined distance to the object.
Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic relaxation. The structures exhibit a preferred design range for increasing induced strain and uniformity of the strain over the fin height.
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/165 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group in different semiconductor regions
H01L 29/15 - Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/161 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group
A cavity type semiconductor package with a substrate and a cap is disclosed. The semiconductor package includes a first semiconductor die coupled to the substrate and a layer of flexible material on a surface of the cap. A trace is on the layer of flexible material. The cap is coupled to the substrate with the layer of flexible material and the trace between the cap and the substrate. A second semiconductor die is coupled to the layer of flexible material and the trace on the cap. The cap further includes an aperture to expose the second semiconductor die to the ambient environment. The layer of flexible material absorbs stress during operation cycles of the package induced by the different coefficient of thermal expansions of the cap and the substrate to reduce the likelihood of separation of the cap from the substrate.
A microelectromechanical system (MEMS) gyroscope includes a driving mass and a driving circuit that operates to drive the driving mass in a mechanical oscillation at a resonant drive frequency. An oscillator generates a system clock that is independent of and asynchronous to the resonant drive frequency. A clock generator circuit outputs a first clock and a second clock that are derived from the system clock. The drive loop of the driving circuit including an analog-to-digital converter (ADC) circuit that is clocked by the first clock and a digital signal processing (DSP) circuit that is clocked by the second clock.
A microelectromechanical system (MEMS) accelerometer sensor has a mobile mass and a sensing capacitor. To self-test the sensor, a test signal is applied to the sensing capacitor during a reset phase of a sensing circuit coupled to the sensing capacitor. The test signal is configured to cause an electrostatic force which produces a physical displacement of the mobile mass corresponding to a desired acceleration value. Then, during a read phase of the sensing circuit, a variation in capacitance of sensing capacitor due to the physical displacement of the mobile mass is sensed. This sensed variation in capacitance is converted to a sensed acceleration value. A comparison of the sensed acceleration value to the desired acceleration value provides an indication of an error in operation of the MEMS accelerometer sensor if the sensed acceleration value and desired acceleration value are not substantially equal.
G01P 21/00 - Testing or calibrating of apparatus or devices covered by the other groups of this subclass
G01P 15/08 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values
89.
Semiconductor package with a cavity in a die pad for reducing voids in the solder
A semiconductor package having an aperture in a die pad and solder in the aperture coplanar with a surface of the package is disclosed. The package includes a die pad, a plurality of leads, and a semiconductor die coupled to the die pad with a die attach material. A cavity or aperture is formed through the die pad to expose a portion of the die attach material. Multiple solder reflows are performed to reduce the presence of voids in the die attach material. In a first solder reflow, the voids of trapped gas that form when attaching the die to the die pad are released. Then, in a second solder reflow, solder is added to the aperture coplanar with a surface of the die pad. The additional solder can be the same material as the die attach material or a different material.
H01L 23/44 - Arrangements for cooling, heating, ventilating or temperature compensation the complete device being wholly immersed in a fluid other than air
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
H01R 9/00 - Structural associations of a plurality of mutually-insulated electrical connecting elements, e.g. terminal strips or terminal blocksTerminals or binding posts mounted upon a base or in a caseBases therefor
H05K 5/02 - Casings, cabinets or drawers for electric apparatus Details
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/00 - Details of semiconductor or other solid state devices
90.
Power supply package with built-in radio frequency identification tag
A method includes providing a power supply package (PSP) that includes a power supply, an RFID tag, and a power switch, where a control terminal of the power switch is coupled to an output terminal of the RFID tag, and load path terminals of the power switch are coupled between an output terminal of the PSP and a first terminal of the power supply, where a control register of the RFID tag is pre-programmed with a first value such that the RFID tag is configured to generate a first control signal that turns off the power switch; receiving, by the RFID tag, a second value for the control register of the RFID tag; and writing, by the RFID tag, the second value to the control register of the RFID tag such that the RFID tag is configured to generate a second control signal that turns on the power switch.
G06K 19/00 - Record carriers for use with machines and with at least a part designed to carry digital markings
G06K 7/10 - Methods or arrangements for sensing record carriers by electromagnetic radiation, e.g. optical sensingMethods or arrangements for sensing record carriers by corpuscular radiation
G06K 19/07 - Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards with integrated circuit chips
91.
Method and apparatus for cryptographically aligning and binding a secure element with a host device
A method of cryptographically binding a secure element to a host device includes storing host key information in a host key information slot of the secure element and storing binding information in secure memory of the secure element. The binding information is correlated with the host key information. The method includes storing a second secret key within system operational code of the host device. The second secret key is cryptographically correlated with the host key information. The method includes, after storing the binding information and after storing the second secret key, operationally coupling the secure element to the host device, reading, by the host device, the binding information from the secure element, generating, by the host device, the host key information using the binding information and the second secret key, and storing, by the host device, the host key information in a host key information slot of the host device.
G06F 11/14 - Error detection or correction of the data by redundancy in operation, e.g. by using different operation sequences leading to the same result
H04L 9/14 - Arrangements for secret or secure communicationsNetwork security protocols using a plurality of keys or algorithms
H04L 9/30 - Public key, i.e. encryption algorithm being computationally infeasible to invert and users' encryption keys not requiring secrecy
H04L 9/32 - Arrangements for secret or secure communicationsNetwork security protocols including means for verifying the identity or authority of a user of the system
92.
Package with lead frame with improved lead design for discrete electrical components and manufacturing the same
A semiconductor package includes a lead frame, a die, a discrete electrical component, and electrical connections. The lead frame includes leads and a die pad. Some of the leads include engraved regions that have recesses therein and the die pad may include an engraved region or multiple engraved regions. Each engraved region is formed to contain and confine a conductive adhesive from flowing over the edges of the engraved leads or the die pad. The boundary confines the conductive adhesive to the appropriate location on the engraved lead or the engraved die pad when being placed on the engraved regions. By utilizing a lead frame with engraved regions, the flow of the conductive adhesive or the wettability of the conductive adhesive can be contained and confined to the appropriate areas of the engraved lead or engraved die pad such that a conductive adhesive does not cause cross-talk between electrical components within a semiconductor package or short circuiting within a semiconductor package.
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
93.
Mobile device transportation mode management device, system and method
A portable device includes one or more memories and travel mode control circuitry coupled to the one or more memories. The travel mode control circuitry, in operation, monitors motion data and detects a first travel state of the device based on the monitored motion data and an acceleration profile. When the first travel state of the device is detected, motion data and pressure data are monitored to detect a transition from the first travel state to a second travel state of the device. When the transition to the second travel state of the device is detected, one or more control signals are generated to cause the device to enter a first travel mode of operation.
A device including microelectromechanical systems (MEMS) sensors are used in dead reckoning in conditions where Global Positioning System (GPS) signals or Global Navigation Satellite System (GNSS) signals are lost. The device is capable of tracking the location of the device after the GPS/GNSS signals are lost by using MEMS sensors such as accelerometers and gyroscopes. By calculating a misalignment angle between a forward axis of a sensor frame of the device and a forward axis of a vehicle frame using the data received from the MEMS sensors, the device can accurately calculate the location of a user or the vehicle of the device even without the GPS/GNSS signals. Accordingly, a device capable of tracking the location of the user riding in the vehicle in GPS/GNSS signals absent environment can be provided.
G01C 21/16 - NavigationNavigational instruments not provided for in groups by using measurement of speed or acceleration executed aboard the object being navigatedDead reckoning by integrating acceleration or speed, i.e. inertial navigation
G01C 21/20 - Instruments for performing navigational calculations
G01S 19/49 - Determining position by combining or switching between position solutions derived from the satellite radio beacon positioning system and position solutions derived from a further system whereby the further system is an inertial position system, e.g. loosely-coupled
95.
Dead reckoning by determining misalignment angle between movement direction and sensor heading direction
A device including microelectromechanical systems (MEMS) sensors is used in dead reckoning in conditions where Global Positioning System (GPS) signals or Global Navigation Satellite System (GNSS) signals are lost. The device is capable of tracking the location of the device after the GPS/GNSS signals are lost by using MEMS sensors such as accelerometers and gyroscopes. By calculating a misalignment angle between a sensor frame of the device with either the movement direction of the vehicle or the walking direction of a pedestrian using the MEMS sensors, the device can accurately calculate the location of a user of the device even without the GPS/GNSS signals. Accordingly, a device capable of tracking the location of a pedestrian and a user riding in a vehicle without utilizing GPS/GNSS signals can be provided.
G01C 21/16 - NavigationNavigational instruments not provided for in groups by using measurement of speed or acceleration executed aboard the object being navigatedDead reckoning by integrating acceleration or speed, i.e. inertial navigation
G01C 21/20 - Instruments for performing navigational calculations
G01C 21/28 - NavigationNavigational instruments not provided for in groups specially adapted for navigation in a road network with correlation of data from several navigational instruments
G01S 19/47 - Determining position by combining measurements of signals from the satellite radio beacon positioning system with a supplementary measurement the supplementary measurement being an inertial measurement, e.g. tightly coupled inertial
Generally described, one or more embodiments are directed to semiconductor packages comprising a plurality of leads and methods of forming same. The plurality of leads include active leads that are electrically coupled to bond pads of a semiconductor die and thereby coupled to active components of the semiconductor die, and inactive leads that are not electrically coupled to bond pads of the semiconductor die. The active leads have surfaces that are exposed at a lower surface of the semiconductor package and forms lands, while the inactive leads are not exposed at the lower surface of the package.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/00 - Details of semiconductor or other solid state devices
A method and device for unlatching a door from a frame, using a keyless door latch system, is provided. In one embodiment, a secondary unlocking component receives a signal and derives power from the signal to provide a power source for the keyless door latch system. A microcontroller generates a control signal and an actuator, in response to receiving the control signal, actuates the secondary unlocking component, which allows an energy source, from an exterior of the door, to be transferred to the keyless door latch system for the unlatching of the door.
A portable device includes one or more memories and travel mode control circuitry coupled to the one or more memories. The travel mode control circuitry, in operation, monitors motion data and temperature data to detect a first travel state of the device. When the first travel state of the device is detected, motion data and pressure data are monitored to detect a transition from the first travel state to a second travel state of the device. When the transition to the second travel state of the device is detected, one or more control signals are generated to cause the device to enter a first travel mode of operation.
A semiconductor device that a fin structure, and a gate structure present on a channel region of the fin structure. A composite spacer is present on a sidewall of the gate structure including an upper portion having a first dielectric constant, a lower portion having a second dielectric constant that is less than the first dielectric constant, and an etch barrier layer between sidewalls of the first and second portion of the composite spacer and the gate structure. The etch barrier layer may include an alloy including at least one of silicon, boron and carbon.
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/161 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group
H01L 29/165 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group in different semiconductor regions
A circuit for controlling a first plurality of transistors connected in parallel and a second plurality of transistors connected in parallel, includes: a first plurality of stages, a respective one of the first plurality of stages being configured to supply a first control signal to a respective one of the first plurality of transistors; and a second plurality of stages, a respective one of the second plurality of stages being configured to supply a second control signal to a respective one of the second plurality of transistors. An output current of the respective one of the first plurality of stages is regulated based on a difference between a first value representative of a sum of output currents of each stage of the first plurality of stages and a second value representative of a sum of set points assigned to the first plurality of stages.
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
G01R 19/165 - Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
G05B 11/42 - Automatic controllers electric with provision for obtaining particular characteristics, e.g. proportional, integral, differential for obtaining a characteristic which is both proportional and time-dependent, e.g. P. I., P. I. D.
G05F 1/618 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series and in parallel with the load as final control devices
G05F 1/56 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
H02J 7/34 - Parallel operation in networks using both storage and other DC sources, e.g. providing buffering
patents
