CHAMBER BODIES HAVING MACHINED WALLS, CHAMBER ARRANGEMENTS AND SEMICONDUCTOR PROCESSING SYSTEMS HAVING CHAMBER BODIES WITH MACHINED WALLS, AND METHODS OF MAKING CHAMBER BODIES
A chamber body includes a ceramic weldment having a lower wall, a sidewall, and an upper wall. The sidewall is coupled to the lower wall by a sidewall-to-lower wall weld and the upper wall is coupled to the sidewall by a sidewall-to-upper wall weld. The upper wall has an upper wall plate portion and an upper wall rib portion extending therefrom formed from a singular quartz workpiece using a subtractive manufacturing technique, the upper wall further having a unwelded ribbed region overlying the lower wall. Chamber arrangements, semiconductor processing systems and related methods of making chamber bodies and depositing material layers onto substrates supported within chamber bodies are also described.
F27B 17/00 - Furnaces of a kind not covered by any of groups
B28B 11/02 - Apparatus or processes for treating or working the shaped articles for attaching appendages, e.g. handles, spouts
B28D 1/02 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by sawing
B28D 1/14 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by boring or drilling
B28D 1/18 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by milling, e.g. channelling by means of milling tools
Methods of forming magnesium indium zinc oxide (MIZO) layers by vapor deposition are provided. In some embodiments cyclical deposition processes for forming MIZO layers comprise a deposition cycle including alternately and sequentially contacting a substrate in a reaction chamber with a vapor phase indium precursor, a vapor phase zinc precursor, a vapor phase magnesium precursor, and an oxygen reactant.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Methods and apparatus are disclosed for forming a passivation layer on a substrate, comprising, providing the substrate in a reaction chamber, the substrate comprising a first surface and a second surface, contacting the substrate with a first precursor comprising an amine compound comprising at least two amine groups and contacting the substrate with a second precursor comprising at least one thioanhydride, wherein contacting the substrate with the first and second precursors forms the film selectively on the first surface relative to the second surface.
A substrate processing system with capabilities to detect whether a wafer is dechucked during process is disclosed. An embodiment of the present disclosure's system comprises a reaction chamber provided with an upper electrode and a lower electrode, and configured to process a wafer, a radio frequency generator configured to generate a high frequency power to process the wafer in the reaction chamber, a matching unit disposed between the reaction chamber and the generator and configured to match the generated high frequency power from the generator for use in the reaction chamber, a phase shift detector connected to the reaction chamber in parallel and configured to detect a phase shift between a signal going into the upper electrode and a signal coming out of the lower electrode, and a controller connected to the phase shift detector and configured to receive parameters, to determine and to display the status of the wafer.
G01R 25/00 - Arrangements for measuring phase angle between a voltage and a current or between voltages or currents
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
5.
METHOD FOR FORMING A RARE-EARTH-CONTAINING LAYER, APPARATUS, AND STRUCTURE
This disclosure relates to a method for forming a rare-earth-containing layer, an apparatus, and a structure. The method comprises providing a substrate within a process chamber and depositing the rare-earth-containing layer over the substrate. The process of depositing the rare-earth-containing layer comprises providing a rare-earth precursor into the process chamber, providing a metal precursor into the process chamber, and providing one or more non-metal element reactants into the process chamber. The apparatus comprises a process chamber, a precursor supply unit for supplying a rare-earth precursor and a metal precursor into the process chamber, and a reactant supply unit for supplying one or more non-metal element reactants into the process chamber.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
The present disclosure relates to methods and apparatuses for depositing metal phosphide-containing material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a metal halide precursor into the reaction chamber in a vapor phase; and providing a second precursor into the reaction chamber in a vapor phase to form metal phosphide-containing material on the substrate.
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
Various embodiments of the present technology may provide a susceptor and a sensing system coupled to the susceptor and configured to generate a plurality of sensor output signals indicating air flow across the susceptor and sensing system. A controller is connected to the sensing system and configured to detect a flow pattern on the susceptor based on the sensor output signals.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
8.
CHAMBER BODIES HAVING MACHINED UPPER WALLS, CHAMBER ARRANGEMENTS AND SEMICONDUCTOR PROCESSING SYSTEMS HAVING CHAMBER BODIES WITH MACHINED UPPER WALLS, AND METHODS OF MAKING CHAMBERS WITH MACHINED UPPER WALLS
A chamber body includes a ceramic weldment. The ceramic weldment has an upper wall, a sidewall, a lower wall, and a lower wall rib segment. The sidewall is coupled to the upper wall by a sidewall-to-upper wall weld, the lower wall coupled to the sidewall by a sidewall-to-lower wall weld and defining a passthrough, and the lower wall rib segment is coupled to the lower wall plate by a lower wall rib segment weld. The upper wall has an upper wall plate portion and an upper wall rib portion through that define an upper wall unwelded ribbed region, overlay the passthrough, and which is formed using a singular ceramic workpiece using a subtractive manufacturing technique. Chamber arrangements, semiconductor processing systems, and methods of making ceramic weldments are also described.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
9.
CHAMBER BODIES HAVING MACHINED LOWER WALLS, CHAMBER ARRANGEMENTS AND SEMICONDUCTOR PROCESSING SYSTEMS HAVING CHAMBER BODIES WITH MACHINED LOWER WALLS, AND METHODS OF MAKING CHAMBERS WITH MACHINED LOWER WALLS
A chamber body includes a ceramic weldment having an upper wall, a sidewall, and a lower wall. The upper wall is coupled to the sidewall by a sidewall-to-upper wall weld and includes an upper wall rib segment coupled to an upper wall plate by an upper wall rib segment weld. The sidewall is coupled to the lower wall by a sidewall-to-lower wall weld. The lower wall has a lower wall plate portion and a lower wall rib portion extending therefrom both formed from a singular ceramic workpiece using a subtractive manufacturing technique, the lower wall plate portion thereby defining a lower wall unwelded ribbed region including a plurality of lower wall rib segments defined by the lower wall rib portion of the lower wall. Chamber arrangements, semiconductor processing systems, and methods of making ceramic weldments for chamber bodies in chamber arrangement and semiconductor processing systems are also described.
F27B 17/00 - Furnaces of a kind not covered by any of groups
B28B 11/02 - Apparatus or processes for treating or working the shaped articles for attaching appendages, e.g. handles, spouts
B28D 1/02 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by sawing
B28D 1/14 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by boring or drilling
B28D 1/18 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by milling, e.g. channelling by means of milling tools
Various embodiments of the present technology may provide a susceptor with adjustment mechanisms coupled to the shaft of the susceptor. A flexible rotary shaft may be coupled to the adjustment mechanism, and a motor may be connected to the flexible rotary shaft to rotate the adjustment mechanism. The adjustment mechanism may be one that moves susceptor in a horizontal direction or one that moves the susceptor in a vertical direction.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
11.
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SUBSTRATE TREATMENT APPARATUS USING ETHER-CAT
Examples of a method of manufacturing a semiconductor device includes, in treatment of a substrate with the use of a plasma, acquiring an RF waveform from a reactor through an Ether CAT in real time, the RF waveform being a waveform relating to an electric power to be applied to an RF plate, and adjusting, by using the RF waveform, the electric power to be applied to the RF plate.
A substrate processing method of easily forming an air gap includes: forming a first insulating layer having a first step coverage on a patterned structure including a first protrusion and a second protrusion; and forming, on the first insulating layer, a second insulating layer having a second step coverage lower than the first step coverage, wherein an air gap is formed between the first protrusion and the second protrusion by repeating the forming of the second insulating layer.
A plasma modulation apparatus for use in a substrate processing system is disclosed. The apparatus comprising: a plurality of radio frequency (RF) paths connected to N different meshes, wherein a susceptor of the substrate processing system is divided into the N different meshes and N is an integer equal to or greater than 2, wherein each of the RF paths comprises: an RF rod connected to a mesh and configured to transmit RF signal from the meshes; a Voltage-Current (VI) sensor connected to the RF rod and configured to measure a current from the RF rod; and a variable impedance circuit connected to the VI sensor and configured to change an impedance of the RF path and further configured to be grounded, wherein each of the RF paths are grounded separately and each of the RF paths corresponds to a different mesh, respectively.
A semiconductor processing assembly is disclosed with: a wafer handling robot comprising a plurality of end effectors distributed in substantial vertical direction at an end effector pitch and configured to carry wafers; a wafer boat having boat slots distributed in substantial vertical direction and configured to hold wafers to be loaded at a load pitch; a wafer cassette having cassette slots distributed in substantial vertical direction at a cassette pitch and configured to hold wafers; and an electronic controller for controlling at least the wafer handling robot and having a system memory. By having the end effector pitch substantially equal to the cassette pitch, the electronic controller may be configured and programmed with a program in its system memory to control the semiconductor processing assembly to transfer wafers between the cassette slots of the wafer cassette and the boat slots of the wafer boat.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
B25J 11/00 - Manipulators not otherwise provided for
B25J 15/06 - Gripping heads with vacuum or magnetic holding means
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
15.
HYDROGEN BARRIERS AND RELATED STRUCTURES, SYSTEMS, AND METHODS
Methods for forming hydrogen barriers for, for example, channel layers in thin film transistors. The hydrogen barriers can comprise doped dielectrics such as magnesium-doped aluminum oxide. Further described are related structures and systems.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Methods and apparatuses for deposition of thin films are provided. A deposition reactor is provided comprising: a first station configured to contain a substrate, the first station comprising a first heating element; a second station configured to contain the substrate, the second station comprising a second heating element, wherein the first station is configured to contact the substrate with a first reactant in the first station in substantial isolation from the second station such that a layer of the first reactant is deposited on the substrate, wherein the first heating element is configured to heat the first station to a first station temperature during contacting of the substrate with the first reactant, wherein the second station is configured to contact the substrate with a second reactant in the second station substantially in the absence of the first reactant.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
C23C 16/54 - Apparatus specially adapted for continuous coating
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
The current disclosure relates to the manufacture of semiconductor devices. Specifically, the disclosure relates to a method of forming a transition metal-comprising material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a transition metal precursor comprising a transition metal compound in the reaction chamber, and providing a second precursor in the reaction chamber, wherein the transition metal compound comprises a transition metal halide bound to an adduct ligand, and the second precursor comprises a chalcogen or a pnictogen. The disclosure further relates to a method of forming a transition metal layer, and to semiconductor devices. Further, a vapor deposition assembly is disclosed.
C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
C23C 16/08 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
19.
SUBSTRATE PROCESSING APPARATUS INCLUDING LIGHT RECEIVING DEVICE AND CALIBRATION METHOD OF LIGHT RECEIVING DEVICE
Examples of a substrate processing apparatus includes a chamber configured to contain a stage, a light receiving device configured to receive light inside the chamber, and a substrate transfer apparatus that includes a shaft and a rotation arm configured to rotate with rotation of the shaft and is configured to supply a plurality of light beams having different amounts of light to the light receiving device.
H10F 71/00 - Manufacture or treatment of devices covered by this subclass
G01J 1/42 - Photometry, e.g. photographic exposure meter using electric radiation detectors
G01N 21/27 - ColourSpectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection
Provided is a method of forming a conformal film on a recess of a substrate in a reaction chamber by repeating a cycle comprising forming a first film comprising supplying a silicon source and a reactant and applying a first power from a power supply unit to the reaction chamber while supplying the silicon source and the reactant, treating the first film by applying a second power from the power supply unit to the reaction chamber while supplying the reactant, wherein the first power is applied in a pulsed mode, wherein the power supply unit comprises a matching network comprising electronically variable capacitors.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C 16/515 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
Disclosed are methods and systems for filing a gap. An exemplary method comprises providing a substrate in a reaction chamber. The substrate comprises at least one gap. The method further comprises depositing a layer into the gap. The layer has a first volume. Finally, the method further comprises converting the layer into a converted layer. The converted layer has a second volume. The second volume is greater than the first volume. The methods and systems are useful, for example, in the field of integrated circuit manufacture.
Provided is a method of filling a gap with a flowable oxide film. In one embodiment of the disclosure, the method comprises forming a flowable silicon nitride film, followed by converting the silicon nitride film in a silicon oxide film. The silicon nitride film may be formed by supplying an oligomeric silicon source and a nitrogen source activated by a power. The silicon nitride film may be converted into the silicon oxide film by supplying an oxygen source while applying a Vacuum UV radiation. The Vacuum UV radiation may be applied in a pulsed mode.
A fixture includes a first end plate, a threaded member, a second end plate, and a compression member. The first end plate has a first end plate recess. The threaded member is fixed in the first end plate in extends in a direction opposite the first end plate recess. The second end plate has a second end plate recess facing the first end plate recess and is slidably received on the threaded member. The compression member is arranged on a side of the second end plate opposite the first end plate and is threadedly seated on a male threaded segment of the threaded member to reverse flow a purge fluid through a mixing block compressively fixed between the first end plate and the second end plate. Fixture arrangements, methods of making mixing blocks, mixing blocks, and semiconductor processing systems including mixing blocks are also described.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
24.
SUBSTRATE TRANSFER DEVICE, NOTCH POSITION CORRECTION METHOD, SUBSTRATE TRANSFER METHOD, AND STORAGE MEDIUM
Examples of a substrate transfer device includes a load lock chamber (LLC), a first wafer handling chamber (WHC), a first transfer robot fixed at a first attachment position in the first WHC, a pass through chamber (PTC) that is in contact with the first WHC, a substrate stage provided in the PTC, a second WHC that is in contact with the PTC, and a second transfer robot fixed at a second attachment position in the second WHC. A first angle that is an angle formed by a first virtual line that connects the first attachment position and the second attachment position and a second virtual line that connects the first attachment position and the substrate stage is equal to a second angle that is an angle formed by the first virtual line and a third virtual line that connects the second attachment position and the substrate stage.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
B05D 1/00 - Processes for applying liquids or other fluent materials
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/04 - Coating on selected surface areas, e.g. using masks
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Various embodiments of the present technology may provide a test fixture for testing flow of a restrictor. The test fixture may be coupled downstream from a flow control assembly. The test fixture may include a body with a threaded region and a gland coupled to the body with a threaded nut. The text fixture outlet may be vented to the atmosphere.
The present disclosure relates to methods for etching a molybdenum (Mo) film and systems for performing said method. The disclosed methods comprise, exposing a substrate comprising an Mo outer layer to an oxygen containing reactant to convert at least a portion of the Mo outer layer to molybdenum oxide (MoOx), then exposing the substrate to an etchant that comprises one or more S—X bond(s), P—X bond(s), and Si—X bond(s), where X is Cl or Br, to convert the molybdenum oxide to a volatile Mo containing compound that is removed from the surface of the substrate, thereby reducing the thickness of the Mo outer layer.
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
C09K 13/08 - Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
28.
STANDARD BASE COMPONENTS FOR FORMING INBOARD AND OUTBOARD SUBSTRATE HANDLING CHAMBERS AND THEIR USE IN PRODUCTION OF SUBSTRATE PROCESSING SYSTEMS WITH EXPANDED PRODUCTION CAPACITY
Substrate processing systems and methods have expanded substrate processing capabilities. For such systems, substrate handling chamber bodies of different styles and for different areas of the substrate processing system may be formed using a standard substrate handling chamber precursor. Such substrate handling chamber precursors may include an exterior shape most of which can be used for two (or more) different styles of substrate handling chamber bodies. During milling, the standard precursors can be milled in different ways and by removing different amounts of material to form substrate handling chamber bodies having different numbers of facets, with different shapes, and for different locations in a substrate processing system.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
29.
METHOD, SYSTEM AND APPARATUS FOR FORMING ANISOTROPIC LAYER
A method, comprising supporting a substrate within a chamber of a semiconductor processing system, wherein the substrate comprises a feature including a surface having at least two first regions comprising silicon in an Si(110) crystal orientation and at least one second region comprising silicon in a non-Si(110) crystal orientation, wherein the at least one second region is disposed between the first regions, epitaxially growing a silicon-containing material on the at least two first regions in a Si(100) crystal orientation preferentially to the Si(110) crystal orientation and extending the silicon-containing material over the second region.
A method for forming a pattern on a substrate disclosed. The method comprising, providing an Extreme Ultraviolet (EUV) lithography system having an exposure chamber, providing a substrate to the exposure chamber, the substrate comprising a patternable layer, the patternable layer comprising a photosensitive surface termination; and exposing the substrate to EUV radiation while exposing the patternable layer to a reactive gas, thereby forming a pattern on the patternable layer, comprising exposed areas and unexposed areas, the unexposed areas comprising the photosensitive surface termination and the exposed areas comprising an altered surface termination.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A method, system and apparatus are disclosed for depositing a threshold voltage shifting layer comprising an oxygen-free metal sulfide on a substrate, wherein the depositing further comprises, providing a substrate having a surface within a reaction chamber, a) providing an oxygen-free precursor comprising a metal to the reaction chamber to contact the surface, b) providing an oxygen-free, sulfur-containing reactant to the reaction chamber to contact the surface, c) purging the reaction chamber and repeating operations a), b) or c) or any combination thereof until the threshold voltage shifting layer of a predetermined thickness is deposited on the surface.
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
32.
SELECTIVE DEPOSITION OF INHIBITOR MATERIAL AND DEPOSITION ASSEMBLIES
The disclosure relates to methods, processing assemblies, reactants and vapor deposition vessels for selective vapor-phase deposition of inhibitor material on a substrate comprising two surfaces. In some embodiments of the disclosure, the inhibition material is deposited on the first surface of the substrate, whereas substantially no inhibitor material is deposited on the second surface of the substrate. The inhibitor material is formed by contacting the substrate with a vapor-phase inhibitor reactant comprising a silicon atom bonded to an oxygen atom and to a second atom selected from nitrogen and halogens.
A wafer boat system comprising: a carrier extending along a carrier axis and comprising a first end member at a first axial end of the carrier, a second end member at a second axial end of the carrier, and a shell connecting the first end member with the second end member, wherein at least three circumferentially spaced apart axial series of ring support slots are provided to the shell, the ring support slots defining axially spaced apart holder ring positions; and a plurality of holder rings each engageable with the ring support slots to position the holder ring in the carrier at one of the holder ring positions, wherein the holder ring is configured to support a wafer in the carrier, wherein the shell circumferentially interconnects the axial series of slots, wherein axial series of gas transmission openings are formed in the shell between the axial series of slots.
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
A method, system and apparatus for selectively forming aluminum oxide on a first surface of a substrate relative to a second different surface of the substrate, the process comprising one or more super-cycles comprising sub-cycles: a) selectively depositing aluminum nitride on the first surface of the substrate relative to the second different surface of the substrate by one or more selective deposition sub-cycles, b) oxidizing at least a portion of the aluminum nitride by one or more oxidizing sub-cycles, c) etching the aluminum oxide or aluminum nitride, or a combination thereof by one or more thermal etching sub-cycles wherein the etchant is an organic halide, and repeating sub-cycles a), b) or c), or a combination thereof until a desired thickness of an aluminum oxide is formed on the first surface.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Weight and/or layer thickness measurement systems include: (a) a support base for supporting an object; (b) an oscillator source applying oscillating frequency to the support base; (c) a strain sensor measuring strain induced in the support base by the oscillation; and (d) a phase locked loop module connected to the oscillator source and strain sensor. The oscillating frequency applied to the support base is modified based on phase difference information determined by the phase locked loop module to locate a resonant frequency for the support base and supported object. The resonant frequencies before and after processing are used to determine weight and/or thickness of a layer on the object. Cluster type substrate processing systems may include weight and/or layer thickness measurement systems, e.g., of these types, within a substrate handling chamber and/or in a separate chamber or station engaged with the substrate handling chamber.
G01G 3/13 - Weighing apparatus characterised by the use of elastically-deformable members, e.g. spring balances wherein the weighing element is in the form of a solid body stressed by pressure or tension during weighing having piezoelectric or piezo-resistive properties
G01B 7/06 - Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width, or thickness for measuring thickness
36.
CHAMBER ARRANGEMENTS, SEMICONDUCTOR PROCESSING SYSTEMS INCLUDING CHAMBER ARRANGEMENTS AND RELATED MATERIAL LAYER DEPOSITION METHODS
A chamber arrangement for a semiconductor processing system includes a chamber body, a substrate support, a first chamber pyrometer, and a second chamber pyrometer. The chamber body has an exterior surface, a hollow interior, and the substrate support is supported for rotation within the interior of the chamber body. The first chamber pyrometer and second chamber pyrometer are optically coupled to the exterior surface of the chamber body. The first chamber pyrometer is configured to acquire a first temperature measurement at a first location on the exterior surface of the chamber body, and the second chamber pyrometer is configured to acquire a second temperature measurement at a second location on the exterior surface of the chamber body. The second location is offset from the first location to throttle temperature across the exterior surface of the chamber body between the first location and the second location. Material layer deposition methods and computer program products are also described.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
37.
GERMANIUM-DOPED CHARGE TRAPPING LAYER, RELATED DEVICES, RELATED SYSTEMS, AND RELATED METHODS
Aspects of the disclosure generally relate to the field of semiconductor devices, and more particularly, a memory element comprising a charge trapping layer and systems and methods for producing the same. The method for forming a charge trapping layer of a memory element, comprises the steps of: providing a substrate into a reaction chamber; executing one or more cycles, a cycle comprising a hafnium precursor pulse; optionally, a zirconium precursor pulse; an oxygen reactant pulse; a germanium dopant pulse; and wherein, as a result of the one or more cycles, a charge trapping layer comprising one or more germanium-doped hafnium oxide (HfO2) film and/or one or more germanium-doped hafnium zirconium oxide (HZO) film is formed on the substrate.
H10B 43/30 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
H01L 29/167 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form further characterised by the doping material
H10B 41/20 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
H10B 41/30 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
38.
METHODS AND SYSTEMS FOR PREVENTIVE MAINTENANCE OF SEMICONDUCTOR PROCESSING EQUIPMENT
Methods and related systems that can be useful in the field of semiconductor processing equipment. Methods as disclosed herein can comprise cleaning a precursor line with a hot gas stream emanating from a hot end of a vortex tube.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
A method of filling trenches on a surface of a substrate is provided. The method may comprise comprises the steps of providing a substrate within a reaction chamber, the substrate comprising a plurality of narrow trenches and wide trenches formed on a surface of the substrate; a 1st deposition step comprising: (a) flowing a carbon precursor into the reaction chamber; and (b) exposing the carbon precursor to a plasma, wherein the carbon precursor reacts to form a first deposited material; (c) exposing the first deposited material to a post-deposition treatment to cause the first deposited material to flow within the trenches; (d) etching the first deposited material, wherein the first deposited material is substantially level in the narrow trenches and recessed in the wide trenches; and a 2nd deposition step comprising: (e) flowing the carbon precursor with the carrier gas into the reaction chamber; and (f) exposing the carbon precursor to a plasma, wherein the carbon precursor reacts to form a second deposited material on the first deposited material.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
Aspects of the disclosure relate to the field of semiconductor devices, including methods and systems for manufacturing semiconductor devices. More particularly, semiconductor structures comprise a dipole layer, which can be formed from a metal and carbon containing layer. Further described are related methods, deposition systems, and devices.
An apparatus and method for cleaning or etching a molybdenum film or a molybdenum nitride film from an interior of a reaction chamber in a reaction system are disclosed. A remote plasma unit is utilized to activate a halide precursor mixed with an inert gas source to form a radical gas. The radical gas reacts with the molybdenum film or the molybdenum nitride film to form a by-product that is removed from the interior of the reaction chamber by a purge gas.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
MOTOR ARRANGEMENTS, SEMICONDUCTOR PROCESSING SYSTEMS HAVING MOTOR ARRANGEMENTS AND RELATED METHODS OF PURGING MOTOR ARRANGEMENTS IN SEMICONDUCTOR PROCESSING SYSTEMS
A motor arrangement includes a stator body, a rotor body, a permanent magnet and a fluid conduit. The stator body defines a rotary axis and has a bore. The rotor body is supported for rotary movement about the rotary axis in the bore and is separated from the stator body by a gap. The permanent magnet is arranged within the gap and is fixed to one of the stator body and the rotor body. The fluid conduit is supported above the gap and has an outlet in fluid communication with the gap to separate the permanent magnet from an infiltrant fluid resident within an atmosphere above of the gap by issuing a barrier fluid into the atmosphere above the gap and gravimetrically flowing the barrier fluid into the gap. Semiconductor processing systems, barrier fluid kits, and methods of purging motor arrangements are also described.
H02K 9/26 - Structural association of machines with devices for cleaning or drying cooling medium, e.g. with filters
B25J 9/10 - Programme-controlled manipulators characterised by positioning means for manipulator elements
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H02K 21/14 - Synchronous motors having permanent magnetsSynchronous generators having permanent magnets with stationary armatures and rotating magnets with magnets rotating within the armatures
A gas injector and an apparatus constructed and arranged to process a plurality of substrates in a process chamber with such a gas injector may be disclosed. The gas injector may be used to provide a process gas into the process chamber. The gas injector may have a primary conduit elongated along a main axis and a feed end at one end constructed and arranged to connect to a process gas line of the apparatus. There may be provided a plurality of secondary conduits connected with their first end to the primary conduit substantially perpendicular to the main axis of the primary conduit and being provided with a gas exhaust opening at a second end of the secondary conduit to provide the process gas into the process chamber.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
44.
METHODS FOR FORMING A DOPED HAFNIUM ZIRCONIUM OXIDE LAYER ON A SUBSTRATE
The technology of the present disclosure generally relates to the field of capacitor devices. More particularly to Metal-Insulator-Metal capacitors (MIM CAPS) comprising a Hafnium Zirconium Oxide (HZO) layer, and a method for producing the same. Further described are related methods, deposition systems, and devices. The method for forming the doped HZO layer on a substrate, comprises the steps of providing a substrate in a reaction chamber; executing one or more cycles whereby each cycle comprising contacting a hafnium precursor, a zirconium precursor, an oxygen reactant and a dopant precursor on at least part of the substrate by introducing the precursors and reactant in the reaction chamber; the dopant precursor comprises a dopant element having three or four valence electrons and an atomic radius which is less than the atomic radius of an Hf or Zr element of the HZO layer.
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
45.
SUBSTRATE PROCESSING SYSTEMS AND METHODS USING VIRTUAL MACHINE ARCHITECTURE FOR OPERATING SUBSTRATE PROCESSING CHAMBERS
Substrate processing systems and methods include functions of the substrate processing chambers virtually controlled by process module software for the individual substrate processing chambers operating on a remote platform computer (e.g., located with the equipment front end module or load-lock module). The platform computer includes memory storing process module software for each of the associated substrate processing chambers and transmits signals for operating those substrate processing chambers based on data generated by the respective process module software for that substrate processing chamber. The platform computer also receives data transmitted from the substrate processing chambers (e.g., sensor data) that may be used by their respective process module software for generating further operating signals for controlling the respective substrate processing chamber. Avoiding the use and/or inclusion of separate computers in and associated with each individual substrate processing chamber can simplify maintenance and repair, reduce costs, reduce downtime, and improve efficiency.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
G05B 19/418 - Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
46.
SUBSTRATE PROCESSING APPARATUS WITH FLOW CONTROL RING AND METHOD OF USING SAME
A substrate processing apparatus includes an upper chamber space, a lower chamber space, a susceptor, and a flow control ring assembly comprising a seal ring and a flow control ring having a shape to surround the susceptor, the flow control ring assembly sealing or substantially sealing the upper chamber space from the lower chamber space while the susceptor in a first position.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
In general, the various aspects of the technology of the present disclosure relate to semiconductor manufacturing apparatuses and processes which may comprise two or more accumulators connected in parallel to each other. The apparatus may have a solid-state precursor sublimator upstream from said two or more accumulators employed by the process.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
C23C 16/52 - Controlling or regulating the coating process
The current disclosure relates to a precursor capsule for holding a precursor for a vapor deposition process. The precursor capsule comprises a vapor-permeable shell configured to define a precursor space, and to allow precursor in vapor form to leave the precursor capsule under vaporization conditions. The disclosure further relates to a precursor vessel comprising capsules according to the current disclosure, to a vapor deposition apparatus and a method.
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
49.
GAS-PHASE REACTOR SYSTEM-WITH A REACTION CHAMBER, A SOLID PRECURSOR SOURCE VESSEL, A GAS DISTRIBUTION SYSTEM, AND A FLANGE ASSEMBLY
Gas-phase reactor systems and methods suitable for use with precursors that are solid phase at room temperature and pressure are disclosed. The systems and methods as described herein can be used to, for example, form amorphous, polycrystalline, or epitaxial layers (e.g., one or more doped semiconductor layers) on a surface of a substrate.
C30B 25/18 - Epitaxial-layer growth characterised by the substrate
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Methods of and systems for performing leak checks of gas-phase reactor systems are disclosed. Exemplary systems include a first exhaust system coupled to a reaction chamber via a first exhaust line, a bypass line coupled to a gas supply unit and to the first exhaust system, a gas detector coupled to the bypass line via a connecting line, a connecting line valve coupled to the connecting line, and a second exhaust system coupled to the connecting line. Methods include using the second exhaust system to exhaust the connecting line to thereby remove residual gas in the connecting line that may otherwise affect the accuracy of the gas detector.
C23C 16/52 - Controlling or regulating the coating process
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
G01M 3/04 - Investigating fluid tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
51.
METHODS FOR DEPOSITING A MOLYBDENUM NITRIDE FILM ON A SURFACE OF A SUBSTRATE BY A CYCLICAL DEPOSITION PROCESS AND RELATED SEMICONDUCTOR DEVICE STRUCTURES INCLUDING A MOLYBDENUM NITRIDE FILM
Methods for depositing a molybdenum nitride film on a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; and depositing a molybdenum nitride film directly on the surface of the substrate by performing one or more unit deposition cycles of cyclical deposition process, wherein a unit deposition cycle may include, contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, and contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor. Semiconductor device structures including a molybdenum nitride film are also disclosed.
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/08 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
G11C 5/06 - Arrangements for interconnecting storage elements electrically, e.g. by wiring
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
The disclosure relates to methods and processing assemblies for selectively depositing organic polymer material on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process is disclosed. The method comprises providing a substrate in a reaction chamber, providing a first vapor-phase organic reactant into the reaction chamber and providing a second vapor-phase organic reactant into the reaction chamber. In the method, the first and second vapor-phase organic reactants form the organic polymer material selectively on the first surface; and the first vapor-phase reactant comprises a cyclic compound comprising at least two primary amine groups.
C23C 16/04 - Coating on selected surface areas, e.g. using masks
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
The disclosure relates to methods, processing assemblies, for selective vapor-phase deposition of inhibitor material on a substrate comprising two surfaces. In some embodiments of the disclosure, the inhibition material is deposited on the first conductive surface of the substrate, whereas substantially no inhibitor material is deposited on the second surface of the substrate. The inhibitor material is formed by contacting the substrate with a vapor-phase inhibitor reactant comprising alkylsilane having at least one alkoxy group bonded to a silicon atom.
C23C 16/04 - Coating on selected surface areas, e.g. using masks
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
54.
SELECTIVE DEPOSITION OF MATERIAL COMPRISING SILICON AND OXYGEN USING PLASMA
Methods and vapor deposition assemblies of selectively depositing material comprising silicon and oxygen on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, providing a metal or metalloid catalyst into the reaction chamber in a vapor phase, providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase and providing a plasma into the reaction chamber to form a reactive species for forming a material comprising silicon and oxygen on the first surface. The methods may comprise subcycles for, for example, adjusting the proportions of material components.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Various embodiments of the present technology may provide a system with a bypass line to a foreline of a reaction chamber. The system may include a pump coupled to the foreline. The system may include a pressure-flow controller upstream from the bypass line. The bypass line may be coupled to the foreline at the pump inlet. The bypass line may include a low-flow pathway where the conductance is between 1% and 10% relative to unrestricted flow. The bypass line can comprise a decomposition device configured to decompose the fluid (e.g., gas) in the bypass line.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Lithographical systems and methods. Embodiments of methods disclosed herein comprise exposing a substrate to an electric field while exposing the substrate to electromagnetic radiation. Thus, dose reduction can be obtained.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
58.
METHOD OF DEPOSITING EPITAXIAL MATERIAL, STRUCTURE FORMED USING THE METHOD, AND SYSTEM FOR PERFORMING THE METHOD
A method of depositing one or more epitaxial material layers, a device structure formed using the method and a system for performing the method are disclosed. Exemplary methods include coating a surface of a reaction chamber with a precoat material, processing a number of substrates, and then cleaning the reaction chamber.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/52 - Controlling or regulating the coating process
Methods for forming a metal silicate layer for controlling a threshold voltage of metal-oxide semiconductor field effect transistor (MOSFET) are disclosed. The methods include forming a metal silicate threshold adjusting layer on a substrate by contacting the substrate with a precursor comprising an organosilanol precursor or a siloxide precursor.
A substrate processing apparatus capable of removing signal interference between reactors includes: a first reactor, a second reactor adjacent to the first reactor, and a power generator configured to supply first power to the first reactor and supply second power to the second reactor, wherein the power generator is further configured to synchronize phases of the first power and the second power.
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
61.
NON-CONTACT COOLING ASSEMBLY FOR COOLING SUBSTRATES
A non-contact cooling assembly for cooling substrates in equipment front end module in batch is presented. The cooling assembly may comprise a support beam and a plurality of cooling plates, wherein the cooling plates are arranged horizontally stacked and attached to the support beam, and wherein the support beam is configured to move horizontally for cooling substrates. Each of the cooling plates may utilize either thermoelectric cooling effect or cooling fluid for cooling the cooling plates and a cooling plate is placed at a first position (distal position) at first and it moves to a second position (proximal position) for more effective substrate cooling.
The technology of the present disclosure generally relates to the field of semiconductor devices. More particularly, semiconductor structures comprising a dipole layer, which comprises a metal and nitrogen containing film, and a method for producing the same. Further described are related methods, deposition systems, and devices. The method for forming the semiconductor structure comprising a dipole layer, comprises the steps of providing a substrate to a reaction chamber; contacting one or more metal precursor on at least part of the substrate by introducing the metal precursor in the reaction chamber; and reacting the deposited metal precursor with a nitrogen reactant in the reaction chamber, thereby forming a metal and nitrogen containing film on at least part of the substrate.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Semiconductor processing system with a capability to monitor gate valves and the method thereof is presented. In the present disclosure, a semiconductor processing system, comprising a reaction chamber, a gate valve coupled to the reaction chamber and a controller operably connected to the gate valve and configured to open and close the gate valve, wherein the controller further configured to calculate an average operation time of the gate valve, set parameters, measure an operation time of the gate valve, and determine the gate valve to be abnormal if the operation time of the gate valve is not within normal range based on the parameters. With the present disclosure, the gate valves can be monitored in real time, which may enable a better substrate processing and better wafer quality.
C23C 16/52 - Controlling or regulating the coating process
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
64.
REMOTE COMPUTER ACCESS LOCKOUT SYSTEMS AND METHODS FOR SUBSTRATE PROCESSING SYSTEMS
Substrate processing systems and methods include selectively activatable remote computer access having lockout and/or tagout controls and/or features. Such substrate processing systems may include: (a) a first network switch including an input port and an output port; (b) a second network switch including an input/output port directly or indirectly connected with the first switch output port; (c) a lockable key switch provided in a power supply line and movable between OFF and ON positions; and (d) a key for moving the key switch between ON and OFF. When ON, an electrical circuit for supplying power to the first network switch and/or second network switch is completed, enabling remote computer control of the substrate processing system. When OFF, an electrical circuit for supplying power to the first network switch and/or second network switch is interrupted, thereby disabling remote computer control. The key can only be removed when in the OFF position.
G05B 15/02 - Systems controlled by a computer electric
H01H 27/08 - Key inserted and then turned to effect operation of the switch wherein the key cannot be removed until the switch is returned to its original position
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The technology of the present disclosure generally relates to the field of semiconductor devices. More particularly, semiconductor structures, systems, and methods for producing the same, comprising surface-modified silicon layers formed by reacting a deposited silicon layer with a halide reactant. The system comprising one or more reaction chamber constructed and arranged to hold a substrate; a silicon precursor vessel constructed and arranged to contain and evaporate a silicon precursor; a halide reactant vessel constructed and arranged to contain and evaporate a halide reactant; an exhaust source; and a controller; wherein the controller is configured to control the flow of said silicon precursor and said halide reactant into said reaction chamber, thereby forming a surface-modified silicon layer on said substrate.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
In one aspect, a method, system and apparatus are disclosed for selectively depositing a layer of organic material on a substrate including a first surface and a second surface by a cyclic deposition process, the process includes providing a substrate in a reaction chamber, providing a first vapor-phase precursor in the reaction chamber, and providing a second vapor-phase precursor in the reaction chamber, where the first and second vapor-phase precursors form the organic material selectively on the first surface relative to the second surface, and where the first vapor-phase precursor includes a diamine or triamine compound.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/04 - Coating on selected surface areas, e.g. using masks
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A method, system and apparatus for substrate processing that includes a susceptor, a thermal protection plate disposed above the susceptor, the thermal protection plate includes a first lift pin through-hole extending from a top surface of the thermal protection plate to a bottom surface of the thermal protection plate, the susceptor includes a second lift pin through-hole and a plate lift member through-hole, and a plate lift member configured to slidably engage the plate lift member through-hole.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
68.
METHODS FOR FORMING A SEMICONDUCTOR DEVICE STRUCTURE AND RELATED SEMICONDUCTOR DEVICE STRUCTURES
Methods for forming a semiconductor device structure are provided. The methods may include forming a molybdenum nitride film on a substrate by atomic layer deposition by contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, contacting the substrate with a second vapor phase reactant comprise a nitrogen precursor, and contacting the substrate with a third vapor phase reactant comprising a reducing precursor. The methods provided may also include forming a gate electrode structure comprising the molybdenum nitride film, the gate electrode structure having an effective work function greater than approximately 5.0 eV. Semiconductor device structures including molybdenum nitride films are also provided.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
Methods, systems, and structures for lithography, in particular EUV lithography. Embodiments of structures disclosed herein comprise a hafnium oxide secondary electron generation layer which can advantageously reduce the dose requirement to fully develop EUV resist.
A material layer deposition method includes flowing a silicon-containing material layer precursor through a chamber body and forming a silicon-containing accretion within the chamber body. A chlorine (Cl2) gas-containing fill is introduced into the chamber body, at least a portion of the silicon-containing accretion is removed using the chlorine (Cl2) gas-containing fill, and the chlorine (Cl2) gas-containing fill and a silicon-containing etchant product removed from the chamber body. Semiconductor processing systems and computer program products are also described.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
71.
METHODS OF FORMING SEMICONDUCTOR STRUCTURES, SEMICONDUCTOR PROCESSING SYSTEMS AND RELATED COMPUTER PROGRAM PRODUCTS
A method of forming a semiconductor structure includes seating a substrate on a substrate support arranged within a chamber arrangement of a semiconductor processing system, flowing a boron-containing precursor to the chamber arrangement at a first boron-containing precursor mass flow rate, and depositing a first portion of a first SiGe:B layer using the boron-containing precursor. Mass flow rate of the boron-containing precursor to an intermediate boron-containing precursor flow rate, a second portion of the first SiGe:B layer is deposited using the boron-containing precursor, mass flow rate of the boron-containing precursor to the chamber arrangement is further increased to a second boron-containing precursor mass flow rate, and a second SiGe:B layer is deposited onto the first SiGe:B layer using the boron-containing precursor, the increase in the mass flow rate of the boron-containing precursor to the intermediate boron-containing precursor mass flow rate limits boron concentration at a first SiGe:B layer-to-second SiGe:B layer interface defined between the first SiGe:B layer and the second SiGe:B layer to less than a boron concentration within the second SiGe:B layer. Semiconductor processing systems and related computer program products are also provided.
H01L 29/167 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form further characterised by the doping material
72.
METHODS FOR FORMING SEMICONDUCTOR STRUCTURES INCLUDING TWO-DIMENSIONAL METAL DICHALCOGENIDE LAYERS
Methods for forming semiconductor structures including 2D-transition metal dichalcogenide layers, methods for forming gate stacks including metallic 2D-transition metal dichalcogenide layer, as well as methods for forming ternary phase 2D-transition metal dichalcogenide layer by an atomic layer deposition process (ALD) are disclosed.
The current disclosure relates to methods of etching a material. The method comprises method of etching material from a first surface of a material. In the method, the substrate having a first surface of a material is provided into a reaction chamber and an etching step is executed. The etching step comprises etching the first material by executing a plurality of etching cycles. Each etching cycle comprises an etching reactant pulse to expose the substrate to an etching reactant and an anneal pulse to expose the substrate to an anneal. The disclosure further relates to methods of forming a semiconductor device and to a semiconductor device. Further, the disclosure relates to a semiconductor processing system.
H01L 21/32 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers using masks
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Methods and systems are disclosed for depositing an oxide in a recess of a substrate, including providing the substrate in a chamber, the substrate including at least one opening to the recess where the at least one opening is bordered by a perimeter in a surface area adjacent to and outside of the recess, where the recess includes an inner surface, pulsing an inhibitor into the chamber to preferentially deposit the inhibitor in a portion of the recess adjacent to at least one opening of the recess and on at least a portion of the surface area, pulsing a precursor into the chamber to chemisorb to the inner surface within the recess, pulsing an oxygen species into the chamber to form the oxide within the recess upon contact with the chemisorbed precursor, and repeating the above recited steps to deposit the oxide to a desired thickness level within the recess.
Various embodiments of the present technology may provide a susceptor assembly. The susceptor assembly may include a susceptor plate and a cap disposed on a surface of the susceptor plate. The cap may have electrodes embedded within it. The susceptor plate may have heating elements embedded within it. The cap may be separated from the susceptor plate by an air gap formed by a plurality of dielectric spacers. The plurality of dielectric spacers may be sized for minimal contact on the cap.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
76.
METHODS AND APPARATUS FOR A GAS LINE MATRIX AND INTERCHANGE ASSEMBLY
Various embodiments of the present technology may provide a gas line matrix and interchange assembly. The wherein the interchange assembly includes a first plurality of gas lines, wherein each gas line comprises a first end and a second end, and wherein the first ends of the first plurality of gas lines align on a first axis and the second ends of the first plurality of gas lines aligns on a second axis, and the first axis is perpendicular to the second axis.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
77.
MULTIPLE-CHAMBER REACTOR FOR SELECTIVE DEPOSITION OF SILICON NITRIDE AND METHOD OF USING SAME
A method and system for depositing silicon using a multiple-chamber reactor are disclosed. An exemplary method includes performing one or more deposition cycles and performing a treatment, etch and/or cure process.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
78.
SELECTIVE DEPOSITION OF OXIDE MATERIAL AND A DEPOSITION ASSEMBLY
The disclosure relates to methods of selectively depositing an oxide material layer on a first surface of a semiconductor substrate relative to a second surface of the same substrate, to semiconductor processing assemblies, as well as to oxide material layers, structures and devices comprising an oxide material layer deposited according to the current disclosure. In the method, an oxide material layer is selectively deposited using a first precursor and an oxygen precursor. The second surface may be passivated against deposition of oxide material.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Disclosed are methods and systems for filling a gap. A method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The method then comprises subjecting the gap filling fluid to a transformation treatment, thus forming a transformed material in the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.
H01L 21/32 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers using masks
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 23/528 - Layout of the interconnection structure
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
81.
LOAD LOCK ARRANGEMENTS, SEMICONDUCTOR PROCESSING SYSTEMS INCLUDING LOAD LOCK ARRANGEMENTS, AND ASSOCIATED METHODS FOR REGULATING THE TEMPERATURE OF SUBSTRATES WITHIN LOAD LOCK ARRANGEMENTS
Load lock assemblies, semiconductor processing systems including load lock assemblies, and associated methods for regulating the temperature of a substrate within load lock assemblies are disclosed. The load lock assemblies include a temperature control assembly coupled to an elevator, the elevator configured to provide vertical movement to the temperature control assembly within a load lock body.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
82.
APPARATUS CONSTRUCTED AND ARRANGED TO PROCESS A PLURALITY OF SUBSTRATES
An apparatus for processing a plurality of substrates is provided. The apparatus may have a process tube creating a process chamber and a door configured to support substrates in the process chamber and to seal the process chamber. The apparatus may have a gas injector to provide process gas into the process chamber. The gas injector may be operably connected to a process gas line in a purge chamber to purge the connection between the gas injector and the process gas line.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
83.
Method of forming vanadium nitride layer and structure including the vanadium nitride layer
Methods and systems for depositing vanadium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium nitride layer onto a surface of the substrate. The cyclical deposition process can include providing a vanadium halide precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process.
Methods and systems for depositing rare earth metal carbide containing layers on a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process such as an atomic layer deposition process for depositing a rare earth metal carbide containing layer onto a surface of the substrate.
A substrate processing method and apparatus to create a sacrificial masking layer is disclosed. The layer is created by providing a first precursor selected to react with one of a radiation modified and unmodified layer portion and to not react with the other one of the radiation modified and unmodified layer portion on a substrate in a reaction chamber to selectively grow the sacrificial masking layer.
A semiconductor processing system and method for depositing silicon layers on a plurality of substrates and a semiconductor precursor storage vessel is disclosed. The system may have a reaction chamber constructed and arranged to receive a boat with a plurality of substrates, a heater configured to heat the reaction chamber to a process temperature, and a silicon precursor source constructed and arranged to provide to the reaction chamber a halosilane.
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
A method of forming a structure is provided. The method includes supporting a substrate within a reaction chamber of a semiconductor processing system, flowing a silicon precursor and a germanium precursor into the reaction chamber, and forming a silicon-germanium layer overlaying the substrate with the silicon containing precursor and the germanium precursor. Concentration of the germanium precursor within the reaction chamber is increased during the forming of the silicon-germanium layer overlaying the substrate. Methods of forming film stack structures, semiconductor device structures, and semiconductor processing systems are also described.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/22 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
C23C 16/52 - Controlling or regulating the coating process
Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a convertible layer on the substrate and exposing the substrate to a conversion reactant. Accordingly, at least a part of the convertible layer is converted into a gap filling fluid. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layersAfter-treatment of these layers
Provided is a method of filling a gap with a flowable oxide film. In one embodiment of the disclosure, the method comprises forming a flowable silicon nitride film, followed by converting the silicon nitride film in a silicon oxide film. The silicon nitride film may be formed by supplying an oligomeric silicon source and a nitrogen source activated by a power. The silicon nitride film may be converted into the silicon oxide film by supplying an oxygen source while applying a vacuum UV radiation. The vacuum UV radiation may be applied in a pulsed mode.
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
A wafer processing apparatus with improved film uniformity is presented. The apparatus comprising a radio frequency (RF) enclosure enclosing and defining a reaction chamber; a showerhead placed inside of the reaction chamber configured to generating plasma for processing a wafer in the reaction chamber; a radio frequency (RF) power supply configured to generate RF and supply the generated RF to the showerhead; a plurality of capacitors connected in parallel and/or in serial between the RF power supply and the showerhead; and more than one auxiliary ground lines configured to be placed above the showerhead. The auxiliary ground lines are to be turned on sequentially for improving map profile.
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
91.
METHOD, SYSTEM AND APPARATUS FOR TREATING SUBSTRATE SURFACE
A method for depositing one or more layers on a substrate is disclosed. The method may comprise providing a substrate, etching a native oxide from a surface of the substrate responsive to exposure to an etchant, contacting an etched surface of the substrate with an oxidizing agent oxidizing a first layer of the substrate responsive to contact with the oxidizing agent and depositing a second layer on the first layer.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/02 - Pretreatment of the material to be coated
A method for forming a film comprising hafnium, zirconium, and oxygen, the method comprising forming the film by a cyclical vapor deposition process under the effect of an electric field.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/52 - Controlling or regulating the coating process
PROTECTED METALLIC COMPONENTS, REACTION CHAMBERS INCLUDING PROTECTED METALLIC COMPONENTS, AND METHODS FOR FORMING AND UTILIZING PROTECTED METALLIC COMPONENTS
Protected metallic components and reaction chambers including protected metallic components are disclosed. Exemplary methods for forming and utilizing protected metallic components are also disclosed. Protected metallic components include a conformal protective layer disposed over a non-planar surface of a metallic core.
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Provided is a method for forming a low-k film by PEALD. In one embodiment, a first silicon precursor is supplied, followed by a second silicon precursor in order to form a silicon precursor layers. Then oxidant is supplied to form a silicon oxide film. The method further comprises a post treatment in order to remove a moisture from the film. The method according to the disclosure enables to form a silicon oxide film with desired low-k value and good step coverage on the recess structure.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Methods and related systems and structures for reducing EUV dose requirements during lithography steps. Presently disclosed methods can comprise forming a dose reducing layer that comprises a doped semiconductor. The doped semiconductor can comprise at least one of an elemental semiconductor and a compound semiconductor.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/503 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
A vapor phase precursor delivery system for delivering a vapor phase precursor for depositing a layer in a vapor phase deposition apparatus is disclosed. The precursor delivery vessel is constructed and arranged to store a solid precursor and to deliver a vapor phase precursor at a vessel outlet. The system being provided with a plate provided with holes to allow for gas transport between the chamber and the part of the vessel where the solid precursor is stored.
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
Various embodiments of the present technology may provide in-situ metrology. A system may include a first sensor embedded within a susceptor and flush with a top surface of the susceptor. The system may also include lift pin pads having a second sensor arranged to contact a lift pin. The system may also include a third sensor arranged outside of a reaction chamber and adjacent to a view port. The system may also include a processor to receive output signals from one or more of the sensors and use the output signals to determine a film thickness on a wafer.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
G01B 5/06 - Measuring arrangements characterised by the use of mechanical techniques for measuring length, width, or thickness for measuring thickness
99.
METHOD FOR FORMING A MOLYBDENUM SILICIDE LAYER ON A SURFACE OF A SUBSTRATE
Methods for forming a molybdenum silicide layer on a surface of substrate are disclosed. The methods included seating a substrate within a reaction chamber, depositing a molybdenum metal layer on a surface of a substrate, and contacting a surface of the molybdenum metal layer with a silicon-containing gas thereby converting at least a portion of the molybdenum metal layer to a molybdenum silicide layer.
H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layersAfter-treatment of these layers
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Substrate processing systems and methods include sealing a gate valve connecting a first chamber (e.g., a load-lock module) and a second chamber (e.g., an equipment front end module), wherein a first side of the first chamber connects to layer deposition equipment and a second side of the first chamber connects to the second chamber via the gate valve. The second chamber receives (i) incoming substrates to be supplied to the first chamber and (ii) outgoing substrates to be removed from the first chamber. In use, a processed substrate is moved from the layer deposition equipment into the first chamber. This processed substrate is cooled by transferring inert gas from the second chamber into the first chamber and into contact with the processed substrate, thereby transferring heat from the processed substrate to the inert gas. After passing over the processed substrate, the inert gas is exhausted from the first chamber.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
