- All sections
- H - Electricity
- H10D - Inorganic electric semiconductor devices
- H10D 30/47 - FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
Patent holdings for IPC class H10D 30/47
Total number of patents in this class: 206
10-year publication summary
|
1
|
0
|
3
|
2
|
2
|
2
|
25
|
33
|
25
|
91
|
| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| United Microelectronics Corp. | 4248 |
21 |
| Innoscience (Suzhou) Technology Co., ltd. | 170 |
9 |
| Japan Display Inc. | 7010 |
6 |
| Intel Corporation | 46893 |
5 |
| Enkris Semiconductor, Inc. | 381 |
5 |
| Sony Semiconductor Solutions Corporation | 10380 |
5 |
| Innoscience (Suzhou) Semiconductor Co., Ltd. | 146 |
5 |
| Toshiba Corporation | 12317 |
4 |
| Infineon Technologies Austria AG | 2139 |
4 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 42389 |
4 |
| The Ritsumeikan Trust | 159 |
4 |
| Nuvoton Technology Corporation Japan | 596 |
4 |
| Panasonic Holdings Corporation | 1725 |
4 |
| Patentix Inc. | 7 |
4 |
| Centre National de La Recherche Scientifique | 10408 |
3 |
| Rohm Co., Ltd. | 6429 |
3 |
| Indian Institute of Science | 314 |
3 |
| National Research Council of Canada | 1549 |
3 |
| NXP USA, Inc. | 4299 |
3 |
| Toshiba Electronic Devices & Storage Corporation | 1952 |
3 |
| Other owners | 104 |