- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 41/70 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
Patent holdings for IPC class H10B 41/70
Total number of patents in this class: 170
10-year publication summary
|
0
|
0
|
0
|
0
|
1
|
6
|
8
|
51
|
62
|
43
|
| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Semiconductor Energy Laboratory Co., Ltd. | 11381 |
147 |
| Samsung Electronics Co., Ltd. | 144675 |
4 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 42288 |
4 |
| Kioxia Corporation | 10288 |
4 |
| STMicroelectronics S.r.l. | 3621 |
2 |
| eMemory Technology Inc. | 387 |
2 |
| Micron Technology, Inc. | 26221 |
1 |
| AMIC Technology Corporation | 4 |
1 |
| Korea National University of Transportation Industry-Academic Cooperation Foundation | 205 |
1 |
| STMicroelectronics International N.V. | 3083 |
1 |
| Yield Microelectronics Corp. | 26 |
1 |
| Anaflash Inc. | 23 |
1 |
| Ipcell Corporation Limited | 2 |
1 |
| Other owners | 0 |