- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 41/46 - Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with an inter-gate dielectric layer also being used as part of the peripheral transistor
Patent holdings for IPC class H10B 41/46
Total number of patents in this class: 19
10-year publication summary
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0
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0
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0
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0
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3
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8
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4
|
3
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1
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1
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| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Samsung Electronics Co., Ltd. | 153573 |
7 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 47211 |
3 |
| Yangtze Memory Technologies Co., Ltd. | 3144 |
3 |
| SK Hynix Inc. | 12134 |
2 |
| United Microelectronics Corp. | 4440 |
2 |
| Shanghai Huali Microelectronics Corporation | 166 |
1 |
| Winbond Electronics Corp. | 1385 |
1 |
| Other owners | 0 |