Alpha & Omega Semiconductor, Ltd.

États‑Unis d’Amérique

Commandez votre montre hebdomadaire Alpha & Omega Semiconductor, Ltd.
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Rang # Quantité totale PI 198 813
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Rang # Activité PI 1 716 639

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Dernier brevet 2009 - Circuit configurations to reduce...
Premier brevet 2002 - High speed switching mosfets usi...

Derniers inventions, produits et services

2009 Invention Circuit configurations to reduce snapback of a transient voltage suppressor. This invention discl...
Invention Planar split-gate high-performance mosfet structure and manufacturing method. This invention disc...
2008 Invention Improved sawtooth electric field drift region structure for power semiconductor devices. This inv...
Invention Shielded gate trench (sgt) mosfet cells implemented with a schottky source contact. This inventio...
2007 Invention High voltage structures and methods for vertical power devices with improved manufacturability. ...
Invention Transient voltage suppressor manufactured in silicon on oxide (soi) layer. A transient voltage-s...
Invention Structures and methods for forming schottky diodes on a p-substrate or a bottom anode schottky di...
Invention Double gate manufactured with locos techniques. This invention discloses a trenched semiconducto...
2006 Invention Split gate formation with high density plasma (hdp) oxide layer as inter-polysilicon insulation l...
Invention Formation of high sheet resistance resistors and high capacitance capacitors by a single polysili...
Invention Circuit configuration and method to reduce ringing in the semiconductor power switching circuits....
Invention Device configuration of asymmetrical dmosfet with schottky barrier source. A trenched semiconduct...
2005 Invention Vertical packaged ic device modules with interconnected 3d laminates directly contacts wafer back...
Invention Configurations and method for carrying out wafer level unclamped inductive switching (uis) tests....
Invention Cobalt silicon contact barrier metal process for high density semiconductor power devices. This ...
Invention Packages for electronic devices implemented with laminated board with a top and a bottom patterne...
Invention Mosfet with a second poly and an inter-poly dielectric layer over gate for synchronous rectificat...
Invention Mosfet using gate work function engineering for switching applications. This invention discloses...
2002 Invention High speed switching mosfets using multi-parallel die packages with/without special leadframes. T...